TWI809756B - Detecting device and method for driving detecting device - Google Patents

Abstract

A detecting device including a pixel circuit and a compensation circuit is provided. The pixel circuit includes a first transistor, a second transistor, a third transistor and a photodiode. The photodiode is coupled between the first transistor and the second transistor. The compensation circuit includes a first end and a second end. The first end of the compensation circuit is coupled to the third transistor. The second end of the compensation circuit is coupled to the first transistor.

Description

Detection device and driving method of detection device

The present invention relates to an electronic device and a driving method of the electronic device, and in particular to a detection device and a driving method of the detection device.

Transistors are used in light sensors, and variations in the characteristics of the components will increase the error of the read signal output by the light sensor, and easily cause the signal range to exceed the input range of the read circuit. Therefore, there is a need for an electronic device and a driving method for the electronic device that can reduce the error of the sensing current caused by the characteristic variation of the transistor in the detection device.

The detection device of the present invention includes a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor and a photodiode. The photodiode is coupled between the first transistor and the second transistor. The compensation circuit includes a first terminal and a second terminal. The first end of the compensation circuit is coupled to the third transistor. The second end of the compensation circuit is coupled to the first transistor. The detection device driving method of the present invention is suitable for driving the detection device. The detection device includes a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor and a photodiode, and the photodiode is coupled between the first transistor and the second transistor, and the compensation circuit is coupled to the first transistor. Between the three transistors and the first transistor. The driving method of the detection device includes: performing a reset step, wherein in the reset step, the first transistor and the third transistor are turned on, and regulating the voltage of the control terminal of the second transistor through a compensation circuit; performing an illumination integration step , wherein the first transistor and the third transistor are not conducted during the light integration step; and the readout step is performed, wherein the first transistor is not conducted and the third transistor is conducted during the readout step.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

The present invention can be understood by referring to the following detailed description when taken in conjunction with the accompanying drawings. It should be noted that, for the sake of easy understanding by readers and brevity of the drawings, several drawings in the present invention only depict a part of the detection device, and specific components in the drawings are not drawn according to actual scale. In addition, the quantity and size of each element in the figure are only for illustration, and are not intended to limit the scope of the present invention.

In the following specification and patent application scope, words such as "have" and "including" are open-ended words, so they should be interpreted as "including but not limited to...".

It should be understood that although the terms first, second, third... may be used to describe various constituent elements, the constituent elements are not limited to this term. This term is only used to distinguish a single constituent element from other constituent elements in the specification. The same term may not be used in the scope of the patent application, but replaced by first, second, third... in accordance with the declared order of elements in the scope of the patent application. Therefore, in the following description, a first constituent element may be a second constituent element in the scope of the patent application.

In some embodiments of the present invention, terms such as "connection" and "interconnection" related to joining and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, There are other structures located between these two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed. In addition, the term "coupled" includes any direct and indirect means of electrical connection.

The detection device of the present invention can be applied in an electronic device, and the electronic device can include a display device, an antenna device, a sensing device, a light emitting device, or a splicing device, but is not limited thereto. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. The electronic device includes, for example, a liquid crystal (liquid crystal) layer or a light emitting diode (Light Emitting Diode, LED). Electronic components can include passive components and active components, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, sensors, MEMS, liquid crystal chips chip), controller (controller), etc., but not limited thereto. The diodes may include light emitting diodes or photodiodes. The light emitting diodes may, for example, include organic light emitting diodes (organic light emitting diodes, OLEDs), submillimeter light emitting diodes (mini LEDs), micro light emitting diodes (micro LEDs), quantum dot light emitting diodes (quantum dot LED), fluorescence (fluorescence), phosphorescence (phosphor) or other suitable materials, or a combination of the above, but not limited thereto. The sensors may, for example, include capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (fingerprint sensor, FPS), touch sensors (touch sensor) , antenna (antenna), or stylus (pen sensor), etc., but not limited thereto. The controller may include, for example, a timing controller, etc., but is not limited thereto. In the following, a display device is used as an electronic device to illustrate the content of the present invention, but the present invention is not limited thereto.

Examples of exemplary embodiments will now be described in detail with reference to the accompanying drawings of the present invention. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.

FIG. 1 shows a schematic diagram of a detection device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of waveforms of voltage signals in various steps in the embodiment of FIG. 1 . Please refer to FIG. 1 and FIG. 2 , the detection device 100 includes a pixel circuit 110 , a compensation circuit 120 and an output circuit 130 . The pixel circuit 110 includes a first transistor T1 , a second transistor T2 , a third transistor T3 and a photodiode PD. The photodiode PD is coupled between the first transistor T1 and the second transistor T2, and the compensation circuit 120 is coupled between the third transistor T3 and the first transistor T1. The third transistor T3 outputs the sensing current Isen. The compensation circuit 120 includes a first terminal N1 and a second terminal N2. The first terminal N1 of the compensation circuit 120 is coupled to the third transistor T3 and receives the sensing current Isen. The second terminal N2 of the compensation circuit 120 is coupled to the first transistor T1. In the reset step P1, the compensation circuit 120 regulates the voltage Vg of the control terminal of the second transistor T2 according to the sensing voltage Vsen corresponding to the sensing current Isen.

Specifically, the first transistor T1 can be used as a reset transistor, including a first terminal, a second terminal and a control terminal. The first terminal of the first transistor T1 can be coupled to the second terminal N2 of the compensation circuit 120 through the signal line 210 . For example, the second terminal of the first transistor T1 can be coupled to the cathode terminal of the photodiode PD and the control terminal of the second transistor T2, but not limited thereto. In other embodiments (not shown), the second terminal of the first transistor T1 may be coupled to the anode terminal of the photodiode PD and the control terminal of the second transistor T2 , but not limited thereto. The control terminal of the first transistor T1 can be coupled to the reset signal Vrst. The photodiode PD (such as the cathode terminal) can be coupled to the second terminal of the first transistor T1 and the control terminal of the second transistor T2, and the photodiode PD (such as the anode terminal) can be coupled to the ground voltage or A voltage source C2 (eg low voltage, eg VSS).

Specifically, the second transistor T2 is used as a driving transistor and includes a first terminal, a second terminal and a control terminal. A first terminal of the second transistor T2 is coupled to a voltage source C1 (such as a high voltage, such as VDD). The second terminal of the second transistor T2 is coupled to the first terminal of the third transistor. The control terminal of the second transistor T2 is coupled to the photodiode (such as the cathode terminal) and the second terminal of the first transistor T1. The third transistor T3 is used as the first selection transistor and includes a first terminal, a second terminal and a control terminal. A first terminal of the third transistor T3 is coupled to a second terminal of the second transistor T2. The second end of the third transistor T3 is coupled to the first end N1 of the compensation circuit 120 through the signal line 220 . The control terminal of the third transistor T3 is coupled to the first control signal V1.

In some embodiments, the compensation circuit 120 may include a current-to-voltage converter 202 , a comparator 204 and/or a fifth transistor M1 . The current-to-voltage converter 202 may include a first terminal and a second terminal. The first end of the current-to-voltage converter 202 can be coupled to the third transistor T3 and receive the sensing current Isen. The current-to-voltage converter 202 can convert the sensing current Isen into a sensing voltage Vsen, and the sensing voltage Vsen is generated at the second terminal of the current-to-voltage converter 202 , for example.

In some embodiments, the current-to-voltage converter 202 may include an amplifier AMP and/or a resistor R, but is not limited thereto. The amplifier AMP may for example have a non-inverting input, an inverting input and an output. The non-inverting input terminal of the amplifier AMP can be grounded, and the inverting input terminal of the amplifier AMP can be used as the first terminal of the current-to-voltage converter 202 . The output terminal of the amplifier AMP can serve as the second terminal of the current-to-voltage converter 202 . The resistor R may, for example, be coupled between the inverting input terminal and the output terminal of the amplifier AMP.

In some embodiments, the comparator 204 may include a first input terminal (eg, an inverting input terminal), a second input terminal (eg, a non-inverting input terminal), and an output terminal. The first input terminal of the comparator 204 can be coupled to the second terminal of the current-to-voltage converter 202 to receive the sensing voltage Vsen. The second terminal of the comparator 204 can be coupled to the data voltage Vd. The comparator 204 can generate a control signal Vsw at its output terminal according to the sensing voltage Vsen and the data voltage Vd. The control signal Vsw can be used to control the conduction state of the fifth transistor M1.

In some embodiments, the fifth transistor M1 includes a first terminal, a second terminal and a control terminal. The first end of the fifth transistor M1 can be coupled to the first end of the first transistor T1 through the signal line 210 . The second end of the fifth transistor M1 can be coupled to the external voltage source Vramp. The control terminal of the fifth transistor M1 can be coupled to the output terminal of the comparator 204 . In some embodiments, the comparator 204 can output the control signal Vsw according to the sensing voltage Vsen and the data voltage Vd to control the conduction state of the fifth transistor M1, and when the fifth transistor M1 is turned on, the external voltage The source Vramp is output to the pixel circuit 110 to regulate the voltage Vg of the control terminal of the second transistor, but not limited thereto.

In addition, the output circuit 130 may include a fourth transistor T4. The fourth transistor T4 is used as the second selection transistor and includes a first terminal, a second terminal and a control terminal. The first terminal of the fourth transistor T4 can be coupled to the first terminal N1 of the compensation circuit 120 . The second terminal of the fourth transistor T4 can be used as an output terminal to output the sensing voltage Vsen corresponding to the sensing current Isen as the output voltage Vout. In some embodiments, the control terminal of the fourth transistor T4 can be coupled to the second control signal V2.

In some embodiments, the first transistor T1, the second transistor T2, the third transistor T3 and/or the fourth transistor T4 are, for example, NMOS transistors, and the fifth transistor M1 is, for example, a PMOS transistor, but not limited to this. The present invention is not limited to the form of the transistor.

Please refer to FIG. 1 and FIG. 2 again, the operation steps of the detection device 100 may include performing a resetting step P1 , performing a light integration step P2 and/or performing a readout step P3 . When the reset step P1 is performed, the voltage of the control terminal of the second transistor T2 can be regulated through the compensation circuit 120 . 2 shows the reset signal Vrest, the signal of the external voltage source Vramp, the first control signal V1 (the control signal provided to the third transistor T4) and the second control signal V2 (provided to the fourth transistor T4) under the above-mentioned different steps. The control signal of the transistor T4) respectively voltage waveform schematic diagram.

In some embodiments, under the reset step P1, the first transistor T1, the third transistor T3, and the fifth transistor M1 may be turned on (and turned on), for example, and the fourth transistor T4 is not turned on (and turned off). . In the reset step P1, the voltage of the control terminal of the second transistor T2 can be regulated through the compensation circuit 120 . In the reset step P1, the fifth transistor M1 can be selectively turned on, for example, by outputting the control signal Vsw according to the aforementioned sensing voltage Vsen and data voltage Vd. When the fifth transistor M1 is turned on, the voltage of the control terminal of the second transistor T2 can be regulated through the external voltage source Vramp. For example, in the reset step P1, the voltage Vg of the control terminal of the second transistor T2 can be modulated according to the provided external voltage source Vramp. In detail, the external voltage source Vramp can be, for example, a voltage adjustable voltage source, which can be gradually adjusted from a negative voltage to a high voltage, so in the reset step P1, and when the fifth transistor M1 is turned on, the second The voltage Vg of the control terminal of the transistor T2 can be modulated synchronously according to the received voltage of the external voltage source Vramp, for example, until the sensing voltage Vsen is the same as the given data voltage Vd, the comparator 204 will output a high voltage The control signal Vsw makes the fifth transistor M1 non-conductive. When the fifth transistor M1 is not turned on, the external voltage source Vramp will no longer output to the pixel circuit 110 to regulate the voltage Vg of the control terminal of the second transistor. Therefore, at this time, the voltage Vg of the control terminal of the second transistor T2 can correspond to the voltage value of the sensing voltage Vsen, so as to achieve current initialization and complete the reset compensation operation.

Next, in the light integration step P2 , the first transistor T1 , the third transistor T3 and/or the fourth transistor T4 are not turned on, for example. In the light integration step P2, when the third transistor T3 is not turned on, for example, the initialization current can be prevented from flowing from the pixel circuit 110 to the compensation circuit 120 in the light integration step P2. Next, in the readout step P3, the first transistor T1 is, for example, turned off, and the third transistor T3 and the fourth transistor T4 are, for example, turned on, so that the sensing voltage Vsen can be read out from the pixel circuit 110 and used as an output voltage Vout is output to the next stage circuit.

In some embodiments, when the fifth transistor M1 is turned on, the external voltage source Vramp can be input to the pixel circuit 110 through the compensation circuit 120 . The external voltage source Vramp can be, for example, a triangular wave or a signal waveform of other shapes, which is not limited in the present invention. Therefore, when the characteristics of the second transistor T2 vary (for example, the threshold voltage Vth changes), the voltage Vg at the control terminal of the second transistor T2 can be regulated through the external voltage source Vramp, so as to initialize the output current Id of the second transistor T2 . Current initialization, for example, refers to regulating the voltage Vg of the control terminal of the second transistor T2, so that the difference between the voltage Vg and the threshold voltage (Vth) will not change due to the characteristic variation of the second transistor T2, which can reduce the voltage of the second transistor T2. Outputting the output current Id with a large difference due to the characteristic variation can reduce the error of the sensing current caused by the characteristic variation of the transistor.

In the embodiment of FIG. 1 , the detection device 100 may include a pixel circuit 110 , a compensation circuit 120 and/or an output circuit 130 , but is not limited thereto. In one embodiment, the detection device may include a plurality of pixel circuits, at least one compensation circuit and a plurality of output circuits. That is to say, multiple pixel circuits can share one compensation circuit, but it is not limited thereto.

FIG. 3 shows a schematic diagram of a detection device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 3, the detection device 300 of this embodiment is similar to the detection device 100 of the embodiment of FIG. A compensation circuit 120 and or an output circuit 130_1 and an output circuit 130_2. The pixel circuit 110_1 and the pixel circuit 110_2 are, for example, pixel circuits located in the same pixel row (column). That is to say, the pixel circuit 110_1 and the pixel circuit 110_2 can share one compensation circuit 120 . In some implementations, the compensation circuit 120 can time-divisionally adjust the voltage Vg of the control terminal of the second transistor T2 in each pixel circuit, so as to initialize the output current Id of each second transistor T2, and reduce the voltage Vg of the second transistor T2 in different pixel circuits. The crystal T2 outputs the output current Id with too large difference due to characteristic variation. Therefore, the detection device 300 can reduce the error of the sensing current caused by the characteristic variation of the transistor.

FIG. 4 is a schematic diagram of a detection device according to another embodiment of the present invention. FIG. 5 is a schematic diagram of the waveform of the voltage signal in the embodiment of FIG. 4 . Please refer to FIG. 1 , FIG. 4 and FIG. 5 , the detection device 400 of this embodiment is similar to the detection device 100 of the embodiment shown in FIG. 1 , the main difference between the two is, for example, the structure of the compensation circuit and its operation method.

Specifically, the detection device 400 includes a pixel circuit 110 , a compensation circuit 420 and an output circuit 130 . Regarding the pixel circuit 110 and the output circuit 130 , reference may be made to the description of the embodiment in FIG. 1 , and the compensation circuit 420 is described below. The compensation circuit 420 may include a current mirror circuit 422 and/or at least one amplifier circuit (such as an amplifier circuit 424 and an amplifier circuit 426. The amplifier circuit 424 and the amplifier circuit 426 may be, for example, common source amplifiers, but are not limited thereto. Here, two Amplifier circuits (ie, amplifier circuit 424 and amplifier circuit 426 ) are taken as an example, but the number of amplifier circuits is not limited to the present invention, and odd or even numbers of amplifier circuits can be used according to requirements.

The current mirror circuit 422 may include a first terminal and a second terminal. The first terminal of the current mirror circuit 422 can be coupled to the third transistor T3 through the signal line 220 and receives the sensing current Isen. The current mirror circuit 422 generates a mirror current Im according to the sensing current Isen, for example. According to the mirror current Im, the sensing voltage Vsen can be generated at the second terminal of the current mirror circuit 422 .

The amplifier circuit 424 may include a first terminal and a second terminal. The amplifier circuit 426 includes a first terminal and a second terminal. The first terminal of the amplifier circuit 424 can be coupled to the second terminal of the current mirror circuit 422 . A second terminal of the amplifier circuit 424 can be coupled to a first terminal of the amplifier circuit 426 . The second terminal of the amplifier circuit 426 can be coupled to the first transistor T1 via the signal line 210 , for example. In some embodiments, the sensing voltage Vsen can generate the regulation voltage Vo through the amplifier circuit 424 and the amplifier circuit 426, and the regulation voltage Vo is output from the second terminal N3 of the amplifier circuit 426, so in the reset step P1, it can The voltage Vg of the control terminal of the second transistor T2 in the pixel circuit 110 is regulated by transmitting the regulated voltage Vo to the pixel circuit 110 .

Please refer to FIG. 4 and FIG. 5 again, the operation steps of the detection device 400 include a reset step P1, a light integration step P2 and/or a readout step P3. And FIG. 5 shows the reset signal Vrest, the first control signal V1 (the control signal provided to the third transistor T4) and the second control signal V2 (the control signal provided to the fourth transistor T4) under the above-mentioned different steps. Schematic diagrams of the respective voltage waveforms. In the reset step P1, the first transistor T1 and the third transistor T3 are turned on, for example. When the characteristics of the second transistor T2 vary, the output current Id of the second transistor T2 will change. For example, if the threshold voltage shifts positively, the output current Id will decrease. The output current Id can be used as the sensing current Isen, and is output from the pixel circuit 110 to the compensation circuit 420 . In the reset step P1 , the current mirror circuit 422 can replicate the sensing current Isen and pass through the amplifier circuit 424 and/or the amplifier circuit 426 . After the sensing current Isen passes through an even number of amplifier circuits, for example, the sensing voltage Vsen can be amplified into the regulating voltage Vo. Regulating the voltage Vo can, for example, increase the voltage Vg of the control terminal of the second transistor T2 to offset the influence of the positive drift of the threshold voltage, but is not limited thereto. Therefore, when the characteristics of the second transistor T2 vary, the voltage Vg of the control terminal of the second transistor T2 can be regulated by regulating the voltage Vo, so as to initialize the output current Id of the second transistor T2 and reduce the voltage of the second transistor T2. The output current Id with a large difference due to characteristic variation is output. Therefore, the detection device 400 can reduce the error of the sensing current caused by the characteristic variation of the transistor.

In other embodiments (not shown), the compensation circuit 420 may include a current mirror circuit 422 and a singular number of amplifier circuits. When the characteristics of the second transistor T2 vary, in the reset step P1, for example, if the threshold voltage shifts negatively, the output current Id will increase. The output current Id can be used as the sensing current Isen, and is output from the pixel circuit 110 to the compensation circuit 420 . In the reset step P1, the current mirror circuit 422 can replicate the sensing current Isen, and after passing through a single number of amplifier circuits, can reduce the sensing voltage Vsen to the regulating voltage Vo, for example. Regulating the voltage Vo may, for example, decrease the voltage Vg of the control terminal of the second transistor T2 to offset the negative shift of the threshold voltage, but is not limited thereto. Therefore, when the characteristics of the second transistor T2 vary, the voltage Vg of the control terminal of the second transistor T2 can be regulated by regulating the voltage Vo, so as to initialize the output current Id of the second transistor T2 and reduce the voltage of the second transistor T2. The output current Id with a large difference due to characteristic variation is output. In addition, the operation of the detection device 400 in this embodiment in the light integration step P2 and the readout step P3 is similar to that of the detection device 100 in the embodiment shown in FIG. 1 , and will not be repeated here.

FIG. 6 is a flow chart showing the steps of the driving method of the detection device according to an embodiment of the present invention. Please refer to FIG. 1 , FIG. 4 and FIG. 6 , the driving method of the detection device in this embodiment is at least suitable for the display devices 100 and 400 in FIG. 1 and FIG. 4 , but the present invention is not limited thereto. Taking the detection device 100 in FIG. 1 as an example, in the reset step P1, the compensation circuit 120 can regulate the voltage Vg of the control terminal of the second transistor T2 according to the sensing voltage Vsen corresponding to the sensing current Isen. In the light integration step P2, the pixel circuit 110 can generate a sensing current Isen through the photodiode PD. In the readout step P3 , the sense voltage Vsen corresponding to the sense current Isen is read out from the output circuit 130 .

In addition, the driving method of the detection device in this embodiment can obtain sufficient teachings, suggestions and implementation descriptions in the embodiments shown in FIG. 1 to FIG. 5 , so details are not repeated here.

To sum up, in the embodiment of the present invention, when the characteristics of the second transistor vary, the voltage at the control terminal of the second transistor can be adjusted to initialize the output current of the second transistor, preventing the second transistor from Output currents that vary greatly due to characteristic variation. The current initialization may, for example, be set to a current corresponding to a sub-threshold region or an on-region of the transistor, but is not limited thereto. Therefore, in the reset step, the compensation circuit regulates the voltage of the control terminal of the second transistor according to the sensing voltage corresponding to the sensing current, which can reduce the error of the sensing current caused by the variation of the characteristics of the transistor in the detection device.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

100, 400: detection device 110, 110_1, 110_2: pixel circuit 120, 420: compensation circuit 130, 130_1, 130_2: output circuit 202: Current-voltage converter 204: Comparator 210, 220: signal line 422: current mirror circuit 424, 426: amplifier circuit AMP: Amplifier Id: output current Im: mirror current Isen: sense current M1: fifth transistor N1: the first end of the compensation circuit N2: The second end of the compensation circuit N3: The second end of the amplifier circuit P1: reset steps P2: Illumination integration steps P3: Readout step PD: photodiode R: resistance T1: first transistor T2: second transistor T3: The third transistor T4: The fourth transistor V1: the first control signal V2: Second control signal Vd: data voltage C1, C2: voltage source Vg: the voltage of the control terminal of the second transistor Vo: regulation voltage Vout: output voltage Vramp: external voltage source Vsen: sensing voltage Vsw: control signal Vrst: reset signal

FIG. 1 shows a schematic diagram of a detection device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of waveforms of voltage signals in various steps in the embodiment of FIG. 1 . FIG. 3 shows a schematic diagram of a detection device according to another embodiment of the present invention. FIG. 4 is a schematic diagram of a detection device according to another embodiment of the present invention. FIG. 5 is a schematic diagram of waveforms of voltage signals in various steps in the embodiment of FIG. 4 . FIG. 6 is a flow chart showing the steps of the driving method of the detection device according to an embodiment of the present invention.

100: detection device

110: Pixel circuit

120: Compensation circuit

130: output circuit

202: Current-voltage converter

204: Comparator

210, 220: signal line

AMP: Amplifier

Id: output current

Isen: sense current

M1: fifth transistor

N1: the first end of the compensation circuit

N2: The second end of the compensation circuit

PD: photodiode

R: resistance

T1: first transistor

T2: second transistor

T3: The third transistor

T4: The fourth transistor

V1: the first control signal

V2: Second control signal

Vd: data voltage

C1, C2: voltage source

Vg: the voltage of the control terminal of the second transistor

Vout: output voltage

Vramp: external voltage source

Vsen: sensing voltage

Vsw: control signal

Vrst: reset signal

Claims (9)

A detection device, comprising: a pixel circuit, including a first transistor, a second transistor, a third transistor and a photodiode, wherein the photodiode is coupled between the first transistor and the Between the second transistors; a compensation circuit, including a first terminal and a second terminal, wherein the first terminal of the compensation circuit is coupled to the third transistor, and the second terminal of the compensation circuit terminal coupled to the first transistor; and an output circuit including a fourth transistor, wherein the fourth transistor is coupled to the first terminal of the compensation circuit. The detection device according to claim 1, wherein the compensation circuit includes: a current-voltage converter including a first terminal and a second terminal, wherein the first terminal of the current-voltage converter is coupled to the a third transistor; a comparator including a first input terminal, a second input terminal and an output terminal, wherein the first input terminal of the comparator is coupled to the second terminal of the current-to-voltage converter, The second input terminal of the comparator is coupled to a data voltage; and a fifth transistor includes a first terminal, a second terminal and a control terminal, and the first terminal of the fifth transistor is coupled to to the first transistor, the second terminal of the fifth transistor is coupled to an external voltage source, and the control terminal of the fifth transistor is coupled to the output of the comparator end. A detection device comprising: A pixel circuit, including a first transistor, a second transistor, a third transistor and a photodiode, wherein the photodiode is coupled between the first transistor and the second transistor; and a compensation circuit, including a first terminal and a second terminal, wherein the first terminal of the compensation circuit is coupled to the third transistor, and the second terminal of the compensation circuit is coupled to the A first transistor, wherein the compensation circuit includes: a current mirror circuit including a first terminal and a second terminal, wherein the first terminal of the current mirror circuit is coupled to the third transistor; and at least one The amplifier circuit includes a first terminal and a second terminal, the first terminal of the at least one amplifier circuit is coupled to the second terminal of the current mirror circuit, and the first terminal of the at least one amplifier circuit Two terminals are coupled to the first transistor. The detection device according to claim 3, wherein the first transistor is used as a reset transistor, the second transistor is used as a driving transistor, and the third transistor is used as a selection transistor. A method for driving a detection device, suitable for driving the detection device, wherein the detection device includes a pixel circuit, a compensation circuit and an output circuit, and the pixel circuit includes a first transistor, a second transistor, a third A transistor and a photodiode, the photodiode is coupled between the first transistor and the second transistor, and the compensation circuit is coupled between the third transistor and the second transistor Between a transistor, the output circuit includes a fourth transistor, and the fourth transistor is coupled to the The compensation circuit and the third transistor, and the driving method of the detection device include: performing a reset step, wherein the first transistor and the third transistor are turn on, and regulate the voltage of the control terminal of the second transistor through the compensation circuit; perform the light integration step, wherein the first transistor and the third transistor are not conducted under the light integration step and performing a readout step, wherein the first transistor is not turned on and the third transistor is turned on when the readout step is performed. The driving method of the detection device according to claim 5, wherein the fourth transistor is not turned on when the reset step is performed. The driving method of the detection device according to claim 5, wherein in the light integration step, the fourth transistor is not turned on. The driving method of the detection device as claimed in claim 5, wherein in the reading step, the fourth transistor is turned on. The driving method of the detection device as claimed in item 6, wherein the compensation circuit includes a fifth transistor, and when the reset step is performed, the fifth transistor is turned on to be regulated by an external voltage source The voltage of the control terminal of the second transistor.

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