TWI806928B - Hydrogen-containing glass-based articles with high indentation cracking threshold - Google Patents
Hydrogen-containing glass-based articles with high indentation cracking threshold Download PDFInfo
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- TWI806928B TWI806928B TW107140818A TW107140818A TWI806928B TW I806928 B TWI806928 B TW I806928B TW 107140818 A TW107140818 A TW 107140818A TW 107140818 A TW107140818 A TW 107140818A TW I806928 B TWI806928 B TW I806928B
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- 239000011521 glass Substances 0.000 title claims abstract description 310
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 118
- 239000001257 hydrogen Substances 0.000 title claims abstract description 118
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 238000005336 cracking Methods 0.000 title claims abstract description 14
- 238000007373 indentation Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000007423 decrease Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 159
- 239000002585 base Substances 0.000 claims description 70
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 27
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 229910052682 stishovite Inorganic materials 0.000 claims description 11
- 229910052905 tridymite Inorganic materials 0.000 claims description 11
- 230000006835 compression Effects 0.000 claims description 10
- 238000007906 compression Methods 0.000 claims description 10
- 230000000977 initiatory effect Effects 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 7
- 229910001413 alkali metal ion Inorganic materials 0.000 claims 4
- 239000000203 mixture Substances 0.000 abstract description 50
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000007545 Vickers hardness test Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 239000003513 alkali Substances 0.000 description 7
- -1 hydrogen ions Chemical class 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- 229910052792 caesium Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052701 rubidium Inorganic materials 0.000 description 6
- 229910018068 Li 2 O Inorganic materials 0.000 description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 239000011591 potassium Substances 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- KOPBYBDAPCDYFK-UHFFFAOYSA-N Cs2O Inorganic materials [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000005342 ion exchange Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910001953 rubidium(I) oxide Inorganic materials 0.000 description 3
- 238000007655 standard test method Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical class [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VVNXEADCOVSAER-UHFFFAOYSA-N lithium sodium Chemical compound [Li].[Na] VVNXEADCOVSAER-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-O oxonium Chemical compound [OH3+] XLYOFNOQVPJJNP-UHFFFAOYSA-O 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000006064 precursor glass Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/007—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in gaseous phase
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Glass Compositions (AREA)
Abstract
Description
相關申請案Related applications
本申請主張2017年11月17日遞交的美國臨時申請第62/587,872號之優先權,該申請之內容受信賴且被以引用的方式全部併入本文中,且主張2018年5月8日遞交的NL申請第2020896號之優先權,該申請之內容受信賴且被以引用的方式全部併入本文中。This application claims priority to U.S. Provisional Application No. 62/587,872, filed November 17, 2017, the contents of which are believed to be incorporated herein by reference in its entirety, and to NL Application No. 2020896, filed May 8, 2018, which is believed to be incorporated herein by reference in its entirety.
本揭示內容係關於含有氫之玻璃基底物件、用以形成該等玻璃基底物件之玻璃組合物及形成該等玻璃基底物件之方法。The present disclosure relates to glass-based articles containing hydrogen, glass compositions used to form the glass-based articles, and methods of forming the glass-based articles.
諸如智慧型電話、平板電腦及可佩戴元件(諸如,手錶及健身追蹤器)之攜帶型電子元件持續變得更小且更複雜。因而,習知地在此等攜帶型電子元件之至少一個外表面上使用的材料亦持續變得更複雜。舉例而言,當攜帶型電子元件變得更小且更薄以符合消費者需求時,在此等攜帶型電子元件中使用之顯示器蓋及外殼亦變得更小且更薄,從而導致對於用以形成此等組件之材料的較高效能要求。Portable electronics such as smartphones, tablets, and wearable elements such as watches and fitness trackers continue to become smaller and more complex. Accordingly, the materials conventionally used on at least one outer surface of such portable electronic components continue to become more complex. For example, as portable electronic components have become smaller and thinner to meet consumer demands, display covers and housings used in such portable electronic components have also become smaller and thinner, resulting in higher performance requirements for the materials used to form these components.
因此,存在對於展現用於在攜帶型電子元件中使用之較高效能(諸如,抗損壞性)之材料的需求。Therefore, there is a need for materials that exhibit higher performance, such as damage resistance, for use in portable electronic components.
在態樣(1)中,提供一種玻璃基底物件。該玻璃基底物件包含:SiO2 、Al2 O3 及P2 O5 ;及一含氫層,其自該玻璃基底物件之一表面延伸至一層深度。該含氫層之一氫濃度自一最大氫濃度至該層深度降低,且該層深度大於5 μm。In aspect (1), a glass substrate article is provided. The glass-based object comprises: SiO 2 , Al 2 O 3 and P 2 O 5 ; and a hydrogen-containing layer extending from a surface of the glass-based object to a depth of one layer. The hydrogen concentration of the hydrogen-containing layer decreases from a maximum hydrogen concentration to the depth of the layer, and the depth of the layer is greater than 5 μm.
在態樣(2)中,提供態樣(1)之玻璃基底物件,其中該玻璃基底物件具有大於或等於1 kgf之一維氏開裂初始閾值。In aspect (2), there is provided the glass substrate article of aspect (1), wherein the glass substrate article has a Vickers crack initiation threshold of greater than or equal to 1 kgf.
在態樣(3)中,提供態樣(1)或(2)之玻璃基底物件,其中該層深度大於或等於10 μm。In aspect (3), there is provided the glass substrate article of aspect (1) or (2), wherein the depth of the layer is greater than or equal to 10 μm.
在態樣(4)中,提供態樣(1)至(3)中任一項之玻璃基底物件,其中該最大氫濃度位於該玻璃基底物件之該表面處。In aspect (4), there is provided the glass-based article of any one of aspects (1) to (3), wherein the maximum hydrogen concentration is at the surface of the glass-based article.
在態樣(5)中,提供態樣(1)至(4)中任一項之玻璃基底物件,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In aspect (5), there is provided the glass-based object of any one of aspects (1) to (4), further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O.
在態樣(6)中,提供態樣(1)至(5)中任一項之玻璃基底物件,進一步包含K2 O。In aspect (6), there is provided the glass-based article of any one of aspects (1) to (5), further comprising K 2 O.
在態樣(7)中,提供態樣(1)至(6)中任一項之玻璃基底物件,其中該玻璃基底物件之中心包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In aspect (7), there is provided the glass-based article of any one of aspects (1) to (6), wherein the center of the glass-based article comprises: greater than or equal to 45 mol % to less than or equal to 75 mol % of SiO 2 ; greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 15 mol % of P 2 O 5 ; and greater than or equal to 6 mol % to less than or equal to Equivalent to 25 mol% K 2 O.
在態樣(8)中,提供態樣(1)至(6)中任一項之玻璃基底物件,其中該玻璃基底物件之該中心包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In aspect (8), there is provided the glass-based article of any one of aspects (1) to (6), wherein the center of the glass-based article comprises: greater than or equal to 45 mol % to less than or equal to 75 mol % of SiO 2 ; greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; greater than or equal to 4 mol % to less than or equal to 15 mol % of P 2 O 5 ; and greater than or equal to 11 mol % to Less than or equal to 25 mol% K 2 O.
在態樣(9)中,提供態樣(1)至(6)中任一項之玻璃基底物件,其中該玻璃基底物件之該中心包含:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In aspect (9), there is provided the glass-based article of any one of aspects (1) to (6), wherein the center of the glass-based article comprises: greater than or equal to 55 mol % to less than or equal to 69 mol % of SiO 2 ; greater than or equal to 5 mol % to less than or equal to 15 mol % of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 10 mol % to Less than or equal to 20 mol% K 2 O.
在態樣(10)中,提供態樣(7)至(9)中任一項之玻璃基底物件,其中該玻璃基底物件之該中心包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In aspect (10), there is provided the glass-based article of any one of aspects (7) to (9), wherein the center of the glass-based article comprises: greater than or equal to 0 mol % to less than or equal to 10 mol % of Cs 2 O; and greater than or equal to 0 mol % to less than or equal to 10 mol % of Rb 2 O.
在態樣(11)中,提供態樣(1)至(10)中任一項之玻璃基底物件,其中該玻璃基底物件實質上無鋰及鈉中之至少一者。In aspect (11), there is provided the glass-based article of any one of aspects (1) to (10), wherein the glass-based article is substantially free of at least one of lithium and sodium.
在態樣(12)中,提供態樣(1)至(11)中任一項之玻璃基底物件,進一步包含自該玻璃基底物件之一表面延伸至該玻璃基底物件內至一壓縮深度的一壓縮應力層。In aspect (12), there is provided the glass substrate article of any one of aspects (1) to (11), further comprising a compressive stress layer extending from a surface of the glass substrate article into the glass substrate article to a compression depth.
在態樣(13)中,提供態樣(12)之玻璃基底物件,其中該壓縮應力層包含至少約100 MPa之一壓縮應力,且該壓縮深度為至少約75 μm。In aspect (13), there is provided the glass substrate article of aspect (12), wherein the compressive stress layer comprises a compressive stress of at least about 100 MPa, and the depth of compression is at least about 75 μm.
在態樣(14)中,提供一種消費者電子產品。該消費者電子產品包含:一外殼,其包含一前表面、一後表面及側表面;至少部分在該外殼內之電組件,該電組件包含至少一控制器、一記憶體及一顯示器,該顯示器在該外殼之該前表面處或鄰近該外殼之該前表面;及一蓋基板,其安置於該顯示器上。該外殼或該蓋基板中之至少一者之至少一部分包含態樣(1)至(13)中任一項之玻璃基底物件。In aspect (14), a consumer electronic product is provided. The consumer electronic product includes: a housing including a front surface, a rear surface, and side surfaces; electrical components at least partially within the housing, the electrical components including at least a controller, a memory, and a display at or adjacent to the front surface of the housing; and a cover substrate disposed on the display. At least a part of at least one of the housing or the cover substrate includes the glass-based article of any one of aspects (1) to (13).
在態樣(15)中,提供一種玻璃。該玻璃包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In aspect (15), a glass is provided. The glass comprises: greater than or equal to 45 mol% to less than or equal to 75 mol% of SiO 2 ; greater than or equal to 3 mol% to less than or equal to 20 mol% of Al 2 O 3 ; greater than or equal to 6 mol% to less than or equal to 15 mol% of P 2 O 5 ; and greater than or equal to 6 mol% to less than or equal to 25 mol% of K 2 O.
在態樣(16)中,提供態樣(15)之玻璃,包含:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In aspect (16), the glass of aspect (15) is provided, comprising: SiO 2 of greater than or equal to 55 mol % to less than or equal to 69 mol %; greater than or equal to 5 mol % to less than or equal to 15 mol % of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 10 mol % to less than or equal to 20 mol % of K 2 O.
在態樣(17)中,提供態樣(15)或(16)之玻璃,進一步包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In aspect (17), there is provided the glass of aspect (15) or (16), further comprising: greater than or equal to 0 mol% to less than or equal to 10 mol% of Cs 2 O; and greater than or equal to 0 mol% to less than or equal to 10 mol% of Rb 2 O.
在態樣(18)中,提供態樣(15)至(17)中任一項之玻璃,其中該玻璃實質上無鋰。In aspect (18), there is provided the glass of any one of aspects (15) to (17), wherein the glass is substantially free of lithium.
在態樣(19)中,提供態樣(15)至(18)中任一項之玻璃,其中該玻璃實質上無鈉。In aspect (19), there is provided the glass of any one of aspects (15) to (18), wherein the glass is substantially sodium-free.
在態樣(20)中,提供態樣(15)至(19)中任一項之玻璃,包含:大於或等於58莫耳%至小於或等於63莫耳%之SiO2 ;大於或等於7莫耳%至小於或等於14莫耳%之Al2 O3 ;大於或等於7莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於15莫耳%至小於或等於20莫耳%之K2 O。In aspect (20), there is provided the glass of any one of aspects (15) to (19), comprising: SiO 2 of greater than or equal to 58 mol % to less than or equal to 63 mol %; greater than or equal to 7 mol % to less than or equal to 14 mol % of Al 2 O 3 ; greater than or equal to 7 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 15 mol % to less than or equal to 20 mol % K 2 O.
在態樣(21)中,提供態樣(15)至(20)中任一項之玻璃,其中該玻璃具有大於或等於5 kgf之一維氏開裂初始閾值。In aspect (21), there is provided the glass of any one of aspects (15) to (20), wherein the glass has a Vickers crack initiation threshold of 5 kgf or greater.
在態樣(22)中,提供態樣(15)至(21)中任一項之玻璃,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In aspect (22), there is provided the glass of any one of aspects (15) to (21), further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O.
在態樣(23)中,提供一種玻璃。該玻璃包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In aspect (23), a glass is provided. The glass comprises: greater than or equal to 45 mol % to less than or equal to 75 mol % of SiO 2 ; greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; greater than or equal to 4 mol % to less than or equal to 15 mol % of P 2 O 5 ; and greater than or equal to 11 mol % to less than or equal to 25 mol % of K 2 O.
在態樣(24)中,提供態樣(23)之玻璃,包含:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於5莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於20莫耳%之K2 O。In aspect (24), the glass of aspect (23) is provided, comprising: greater than or equal to 55 mol % to less than or equal to 69 mol % of SiO 2 ; greater than or equal to 5 mol % to less than or equal to 15 mol % of Al 2 O 3 ; greater than or equal to 5 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 11 mol % to less than or equal to 20 mol % of K 2 O.
在態樣(25)中,提供態樣(23)或(24)之玻璃,進一步包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In aspect (25), there is provided the glass of aspect (23) or (24), further comprising: greater than or equal to 0 mol% to less than or equal to 10 mol% of Cs 2 O; and greater than or equal to 0 mol% to less than or equal to 10 mol% of Rb 2 O.
在態樣(26)中,提供態樣(23)至(25)中任一項之玻璃,其中該玻璃實質上無鋰。In aspect (26), there is provided the glass of any one of aspects (23) to (25), wherein the glass is substantially free of lithium.
在態樣(27)中,提供態樣(23)至(26)中任一項之玻璃,其中該玻璃實質上無鈉。In aspect (27), there is provided the glass of any one of aspects (23) to (26), wherein the glass is substantially sodium-free.
在態樣(28)中,提供態樣(23)至(27)中任一項之玻璃,包含:大於或等於58莫耳%至小於或等於63莫耳%之SiO2 ;大於或等於7莫耳%至小於或等於14莫耳%之Al2 O3 ;大於或等於7莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於15莫耳%至小於或等於20莫耳%之K2 O。In aspect (28), there is provided the glass of any one of aspects (23) to (27), comprising: greater than or equal to 58 mol % to less than or equal to 63 mol % of SiO 2 ; greater than or equal to 7 mol % to less than or equal to 14 mol % of Al 2 O 3 ; greater than or equal to 7 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 15 mol % to less than or equal to 20 mol % K 2 O.
在態樣(29)中,提供態樣(23)至(28)中任一項之玻璃,其中該玻璃具有大於或等於5 kgf之一維氏開裂初始閾值。In aspect (29), there is provided the glass of any one of aspects (23) to (28), wherein the glass has a Vickers cracking initiation threshold of greater than or equal to 5 kgf.
在態樣(30)中,提供態樣(23)至(29)中任一項之玻璃,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In aspect (30), the glass of any one of aspects (23) to (29) is provided, further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O.
在態樣(31)中,提供一種方法。該方法包含:將一玻璃基底基板暴露於具有大於或等於75%之一相對濕度的一環境以形成具有一含氫層之玻璃基底物件,該含氫層自該玻璃基底物件之一表面延伸至一層深度。該玻璃基底基板包括SiO2 、Al2 O3 及P2 O5 。該含氫層之一氫濃度自一最大氫濃度至該層深度降低,且該層深度大於5 μm。In aspect (31), a method is provided. The method includes exposing a glass-based substrate to an environment having a relative humidity greater than or equal to 75% to form a glass-based article having a hydrogen-containing layer extending from a surface of the glass-based article to a depth of one layer. The glass base substrate includes SiO 2 , Al 2 O 3 and P 2 O 5 . The hydrogen concentration of the hydrogen-containing layer decreases from a maximum hydrogen concentration to the depth of the layer, and the depth of the layer is greater than 5 μm.
在態樣(32)中,提供態樣(31)之方法,其中該玻璃基底基板具有包含以下各者之一組成:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In aspect (32), there is provided the method of aspect (31), wherein the glass base substrate has a composition comprising one of: greater than or equal to 55 mol % to less than or equal to 69 mol % of SiO 2 ; greater than or equal to 5 mol % to less than or equal to 15 mol % of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 10 mol % to less than or equal to 20 mol % ear % K 2 O.
在態樣(33)中,提供態樣(31)之方法,其中該玻璃基底基板具有包含以下各者之一組成:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In aspect (33), there is provided the method of aspect (31), wherein the glass base substrate has a composition comprising one of: greater than or equal to 45 mol % to less than or equal to 75 mol % of SiO 2 ; greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; greater than or equal to 4 mol % to less than or equal to 15 mol % P 2 O 5 ; and greater than or equal to 11 mol % to less than or equal to 25 mol % ear % K 2 O.
在態樣(34)中,提供態樣(31)之方法,其中該玻璃基底基板具有包含以下各者之一組成:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In aspect (34), there is provided the method of aspect (31), wherein the glass base substrate has a composition comprising one of: greater than or equal to 45 mol % to less than or equal to 75 mol % of SiO 2 ; greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 15 mol % of P 2 O 5 ; and greater than or equal to 6 mol % to less than or equal to 25 mol % % of K 2 O.
在態樣(35)中,提供態樣(31)至(34)中任一項之方法,其中該玻璃基底基板進一步包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In aspect (35), there is provided the method of any one of aspects (31) to (34), wherein the glass base substrate further comprises: greater than or equal to 0 mol % to less than or equal to 10 mol % of Cs 2 O; and greater than or equal to 0 mol % to less than or equal to 10 mol % of Rb 2 O.
在態樣(36)中,提供態樣(31)至(35)中任一項之方法,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In aspect (36), the method of any one of aspects (31) to (35) is provided, further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O.
在態樣(37)中,提供態樣(31)至(36)中任一項之方法,其中該玻璃基底基板實質上無鋰及鈉中之至少一者。In aspect (37), there is provided the method of any one of aspects (31) to (36), wherein the glass base substrate is substantially free of at least one of lithium and sodium.
在態樣(38)中,提供態樣(31)至(37)中任一項之方法,其中該暴露發生於大於或等於70℃之一溫度下。In aspect (38), there is provided the method of any one of aspects (31 ) to (37), wherein the exposing occurs at a temperature of greater than or equal to 70°C.
在態樣(39)中,提供態樣(31)至(38)中任一項之方法,其中該玻璃基底物件具有大於或等於1 kgf之一維氏開裂初始閾值。In aspect (39), there is provided the method of any one of aspects (31 ) to (38), wherein the glass substrate article has a Vickers crack initiation threshold greater than or equal to 1 kgf.
此等及其他態樣、優勢及突出特徵將自以下詳細描述、附圖及隨附申請專利範圍變得顯而易見。These and other aspects, advantages, and salient features will become apparent from the following detailed description, drawings, and appended claims.
在以下描述中,貫穿在圖中展示之若干視圖,相似參考字元表示相似或對應的部分。亦應理解,除非另有指定,否則諸如「頂部」、「底部」、「向外」、「向內」及類似者之術語為方便用詞,且不應被解釋為限制術語。除非另有指定,否則值範圍在敘述時包括該範圍之上限及下限,以及其間之任何子範圍。如本文中所使用,不定冠詞「一」(a、an)及對應的定冠詞「該(等)」(the)意謂「至少一個」或「一或多個」,除非另有指定。亦應理解,說明書及圖式中揭示之各種特徵可按任何及所有組合使用。In the following description, like reference characters indicate like or corresponding parts throughout the several views shown in the drawings. It should also be understood that terms such as "top", "bottom", "outwardly", "inwardly" and the like are words of convenience and should not be construed as terms of limitation unless otherwise specified. Unless otherwise specified, the recitation of a range of values includes the upper and lower limits of that range, and any subranges therebetween. As used herein, the indefinite articles "a" (a, an) and the corresponding definite article "the" (the) mean "at least one" or "one or more", unless specified otherwise. It should also be understood that the various features disclosed in the specification and drawings can be used in any and all combinations.
如本文中所使用,術語「玻璃基底」按其最寬泛意義使用,以包括完全或部分由玻璃製成之任何物體,包括玻璃陶瓷(其包括結晶相及殘餘非晶玻璃相)。除非另有指定,否則本文中描述的玻璃之所有組成係按莫耳百分比(莫耳%)來表達,且成分係基於氧化物來提供。除非另有指定,否則所有溫度係按攝氏度(℃)來表達。As used herein, the term "glass substrate" is used in its broadest sense to include any object made entirely or partially of glass, including glass ceramics (which include a crystalline phase and a residual amorphous glass phase). Unless otherwise specified, all compositions of glasses described herein are expressed in molar percentages (mol %), and compositions are provided on an oxide basis. All temperatures are expressed in degrees Celsius (°C) unless otherwise specified.
注意,術語「實質上」及「約」可在本文中用以表示固有之不確定程度,其可歸因於任何定量比較、值、量測或其他表示。此等術語亦在本文中用以表示定量表示可因陳述之參考而變化而不導致討論中的主題之基本功能之改變的程度。舉例而言,「實質上無K2 O」之玻璃為K2 O並未經主動地添加或分批至玻璃內而可按極小量(諸如,按小於約0.01莫耳%之量)作為污染物存在之玻璃。如本文中利用,當術語「約」用以修飾一值時,亦揭示精確值。舉例而言,術語「大於約10莫耳%」亦揭示「大於或等於約10莫耳%」。Note that the terms "substantially" and "about" may be used herein to denote an inherent degree of uncertainty that may be attributable to any quantitative comparison, value, measurement or other representation. These terms are also used herein to denote the degree to which a quantitative representation may vary from a stated reference without resulting in a change in the basic function of the subject matter at issue. For example, a "substantially K2O -free" glass is a glass in which K2O has not been actively added or batched into the glass and may be present as a contaminant in very small amounts, such as in amounts less than about 0.01 mole percent. As used herein, when the term "about" is used to modify a value, the exact value is also revealed. For example, the term "greater than about 10 mol%" also discloses "greater than or equal to about 10 mol%".
現將對各種實施例詳細地進行參考,該等實施例之實例說明於隨附實例及圖式中。Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying Examples and Drawings.
該玻璃基底物件包括一含氫層,其自該物件之一表面延伸至一層深度。該含氫層包括自該玻璃基底物件之一最大氫濃度至該層深度減小之一氫濃度。在一些實施例中,該最大氫濃度可位於該玻璃基底物件之該表面處。該玻璃基底物件展現一高維氏凹痕開裂閾值(例如,大於或等於1 kgf),不使用傳統強化方法(例如,一對鹼離子之離子交換或熱回火)。由玻璃基底物件展現之高維氏凹痕開裂閾值表示高抗損壞性。The glass-based article includes a hydrogen-containing layer extending from a surface of the article to a depth of one layer. The hydrogen-containing layer includes a hydrogen concentration from a maximum hydrogen concentration to a decreasing depth of the layer of the glass substrate article. In some embodiments, the maximum hydrogen concentration can be at the surface of the glass substrate article. The glass-based article exhibits a high Vickers dent cracking threshold (eg, greater than or equal to 1 kgf) without the use of conventional strengthening methods (eg, ion exchange of a pair of alkali ions or thermal tempering). A high Vickers dent cracking threshold exhibited by glass-based articles indicates high resistance to damage.
玻璃基底物件可藉由將玻璃基底基板暴露於含有水蒸氣之環境來形成,藉此允許氫物質穿透玻璃基底基板且形成具有一含氫層之玻璃基底物件。如本文中所利用,氫物質包括分子水、羥基、氫離子及水合氫離子。該等玻璃基底基板之組成可經選擇以促進氫物質至玻璃內之相互擴散。如本文中所利用,術語「玻璃基底基板」指在暴露於含水蒸氣環境前之前驅物,用於形成包括含氫層之玻璃基底物件。類似地,術語「玻璃基底物件」指包括一含氫層之後暴露物件。Glass-based articles can be formed by exposing a glass-based substrate to an environment containing water vapor, thereby allowing hydrogen species to penetrate the glass-based substrate and form a glass-based article having a hydrogen-containing layer. As utilized herein, hydrogen species include molecular water, hydroxyl groups, hydrogen ions, and hydronium ions. The composition of the glass-based substrates can be selected to facilitate the interdiffusion of hydrogen species into the glass. As used herein, the term "glass-based substrate" refers to a precursor used to form a glass-based article including a hydrogen-containing layer prior to exposure to a water vapor-containing environment. Similarly, the term "glass-based article" refers to articles that are exposed after including a hydrogen-containing layer.
根據一些實施例的玻璃基底物件100之一代表示橫截面描繪於第1圖中。玻璃基底物件100具有一厚度t,其在一第一表面110與一第二表面112之間延伸。第一含氫層120自第一表面110延伸至一第一層深度,其中該第一層深度具有一深度d1,其自該第一表面110至玻璃基底物件100內量測。第二含氫層122自第二表面112延伸至一第二層深度,其中該第二層深度具有一深度d2,其自該第二表面112至玻璃基底物件100內量測。無添加氫物質區域130存在於第一層深度與第二層深度之間。A representative cross-section of a glass substrate article 100 according to some embodiments is depicted in FIG. 1 . The glass substrate article 100 has a thickness t that extends between a first surface 110 and a second surface 112 . The first hydrogen-containing layer 120 extends from the first surface 110 to a first layer depth, wherein the first layer depth has a depth d1 measured from the first surface 110 into the glass substrate object 100 . The second hydrogen-containing layer 122 extends from the second surface 112 to a second layer depth, wherein the second layer depth has a depth d2 measured from the second surface 112 into the glass substrate article 100 . A region 130 free of hydrogen-added species exists between the first layer depth and the second layer depth.
玻璃基底物件之含氫層可具有大於5 μm之一層深度(depth of layer; DOL)。在一些實施例中,該層深度可大於或等於10 μm,諸如,大於或等於15 μm、大於或等於20 μm、大於或等於25 μm、大於或等於30 μm、大於或等於35 μm、大於或等於40 μm、大於或等於45 μm、大於或等於50 μm、大於或等於55 μm、大於或等於60 μm、大於或等於65 μm、大於或等於70 μm、大於或等於75 μm、大於或等於80 μm、大於或等於85 μm、大於或等於90 μm、大於或等於95 μm、大於或等於100 μm、大於或等於105 μm、大於或等於110 μm、大於或等於115 μm、大於或等於120 μm、大於或等於125 μm、大於或等於130 μm、大於或等於135 μm、大於或等於140 μm、大於或等於145 μm、大於或等於150 μm、大於或等於155 μm、大於或等於160 μm、大於或等於165 μm、大於或等於170 μm、大於或等於175 μm、大於或等於180 μm、大於或等於185 μm、大於或等於190 μm、大於或等於195 μm、大於或等於200 μm或更大。在一些實施例中,該層深度可自大於5 μm至小於或等於205 μm,諸如,自大於或等於10 μm至小於或等於200 μm、自大於或等於15 μm至小於或等於200 μm、自大於或等於20 μm至小於或等於195 μm、自大於或等於25 μm至小於或等於190 μm、自大於或等於30 μm至小於或等於185 μm、自大於或等於35 μm至小於或等於180 μm、自大於或等於40 μm至小於或等於175 μm、自大於或等於45 μm至小於或等於170 μm、自大於或等於50 μm至小於或等於165 μm、自大於或等於55 μm至小於或等於160 μm、自大於或等於60 μm至小於或等於155 μm、自大於或等於65 μm至小於或等於150 μm、自大於或等於70 μm至小於或等於145 μm、自大於或等於75 μm至小於或等於140 μm、自大於或等於80 μm至小於或等於135 μm、自大於或等於85 μm至小於或等於130 μm、自大於或等於90 μm至小於或等於125 μm、自大於或等於95 μm至小於或等於120 μm、自大於或等於100 μm至小於或等於115 μm、自大於或等於105 μm至小於或等於110 μm或由此等端點中之任何者形成之任何子範圍。一般而言,由玻璃基底物件展現之層深度大於可藉由暴露於周圍環境而產生之層深度。The hydrogen-containing layer of the glass-based object may have a depth of layer (DOL) greater than 5 μm. In some embodiments, the depth of the layer may be greater than or equal to 10 μm, such as, greater than or equal to 15 μm, greater than or equal to 20 μm, greater than or equal to 25 μm, greater than or equal to 30 μm, greater than or equal to 35 μm, greater than or equal to 40 μm, greater than or equal to 45 μm, greater than or equal to 50 μm, greater than or equal to 55 μm, greater than or equal to 60 μm, greater than or equal to 65 μm, greater than or Equal to 70 μm, greater than or equal to 75 μm, greater than or equal to 80 μm, greater than or equal to 85 μm, greater than or equal to 90 μm, greater than or equal to 95 μm, greater than or equal to 100 μm, greater than or equal to 105 μm, greater than or equal to 110 μm, greater than or equal to 115 μm, greater than or equal to 120 μm, greater than or equal to 125 μm, greater than or equal to 130 μm, greater or equal to 135 μm, greater than or equal to 140 μm, greater than or equal to 145 μm, greater than or equal to 150 μm, greater than or equal to 155 μm, greater than or equal to 160 μm, greater than or equal to 165 μm, greater than or equal to 170 μm, greater than or equal to 175 μm, greater than or equal to 180 μm, greater than or equal to 185 μm, greater than or equal to 190 μm, greater than or equal to 1 95 μm, greater than or equal to 200 μm or greater. In some embodiments, the depth of the layer may be from greater than or equal to 5 μm to less than or equal to 205 μm, such as from greater than or equal to 10 μm to less than or equal to 200 μm, from greater than or equal to 15 μm to less than or equal to 200 μm, from greater than or equal to 20 μm to less than or equal to 195 μm, from greater than or equal to 25 μm to less than or equal to 190 μm, from greater than or equal to 30 μm to less than or equal to 185 μm, from 35 μm to 180 μm, from 40 μm to 175 μm, from 45 μm to 170 μm, from 50 μm to 165 μm, from 55 μm to 160 μm, from 60 μm to 155 μm, from greater than or equal to 65 μm to less than or equal to 150 μm, from greater than or equal to 70 μm to less than or equal to 145 μm, from greater than or equal to 75 μm to less than or equal to 140 μm, from greater than or equal to 80 μm to less than or equal to 135 μm, from greater than or equal to 85 μm to less than or equal to 130 μm, from greater than or equal to 90 μm to less than or equal to 125 μm , from greater than or equal to 95 μm to less than or equal to 120 μm, from greater than or equal to 100 μm to less than or equal to 115 μm, from greater than or equal to 105 μm to less than or equal to 110 μm, or any subrange formed by any of these endpoints. In general, the depth of layer exhibited by glass-based objects is greater than that which can be produced by exposure to the surrounding environment.
玻璃基底物件之含氫層可具有大於0.005t 之一層深度(depth of layer; DOL),其中t為該玻璃基底物件之厚度。在一些實施例中,該層深度可大於或等於0.010t ,諸如,大於或等於0.015t 、大於或等於0.020t 、大於或等於0.025t 、大於或等於0.030t 、大於或等於0.035t 、大於或等於0.040t 、大於或等於0.045t 、大於或等於0.050t 、大於或等於0.055t 、大於或等於0.060t 、大於或等於0.065t 、大於或等於0.070t 、大於或等於0.075t 、大於或等於0.080t 、大於或等於0.085t 、大於或等於0.090t 、大於或等於0.095t 、大於或等於0.10t 、大於或等於0.15t 、大於或等於0.20t 或更大。在一些實施例中,DOL可自大於0.005t 至小於或等於0.205t ,諸如,自大於或等於0.010t 至小於或等於0.200t 、自大於或等於0.015t 至小於或等於0.195t 、自大於或等於0.020t 至小於或等於0.190t 、自大於或等於0.025t 至小於或等於0.185t 、自大於或等於0.030t 至小於或等於0.180t 、自大於或等於0.035t 至小於或等於0.175t 、自大於或等於0.040t 至小於或等於0.170t 、自大於或等於0.045t 至小於或等於0.165t 、自大於或等於0.050t 至小於或等於0.160t 、自大於或等於0.055t 至小於或等於0.155t 、自大於或等於0.060t 至小於或等於0.150t 、自大於或等於0.065t 至小於或等於0.145t 、自大於或等於0.070t 至小於或等於0.140t 、自大於或等於0.075t 至小於或等於0.135t 、自大於或等於0.080t 至小於或等於0.130t 、自大於或等於0.085t 至小於或等於0.125t 、自大於或等於0.090t 至小於或等於0.120t 、自大於或等於0.095t 至小於或等於0.115t 、自大於或等於0.100t 至小於或等於0.110t 或由此等端點中之任何者形成之任何子範圍。The hydrogen-containing layer of the glass-based article may have a depth of layer (DOL) greater than 0.005 t , where t is the thickness of the glass-based article.在一些實施例中,該層深度可大於或等於0.010 t ,諸如,大於或等於0.015 t 、大於或等於0.020 t 、大於或等於0.025 t 、大於或等於0.030 t 、大於或等於0.035 t 、大於或等於0.040 t 、大於或等於0.045 t 、大於或等於0.050 t 、大於或等於0.055 t 、大於或等於0.060 t 、大於或等於0.065 t 、大於或等於0.070 t 、大於或等於0.075 t 、大於或等於0.080 t 、大於或等於0.085 t 、大於或等於0.090 t 、大於或等於0.095 t 、大於或等於0.10 t 、大於或等於0.15 t 、大於或等於0.20 t或更大。在一些實施例中,DOL可自大於0.005 t至小於或等於0.205 t ,諸如,自大於或等於0.010 t至小於或等於0.200 t 、自大於或等於0.015 t至小於或等於0.195 t 、自大於或等於0.020 t至小於或等於0.190 t 、自大於或等於0.025 t至小於或等於0.185 t 、自大於或等於0.030 t至小於或等於0.180 t 、自大於或等於0.035 t至小於或等於0.175 t 、自大於或等於0.040 t至小於或等於0.170 t 、自大於或等於0.045 t至小於或等於0.165 t 、自大於或等於0.050 t至小於或等於0.160 t 、自大於或等於0.055 t至小於或等於0.155 t 、自大於或等於0.060 t至小於或等於0.150 t 、自大於或等於0.065 t至小於或等於0.145 t 、自大於或等於0.070 t至小於或等於0.140 t 、自大於或等於0.075 t至小於或等於0.135 t 、自大於或等於0.080 t至小於或等於0.130 t 、自大於或等於0.085 t至小於或等於0.125 t 、自大於或等於0.090 t至小於或等於0.120 t 、自大於或等於0.095 t至小於或等於0.115 t 、自大於或等於0.100 t至小於或等於0.110 t或由此等端點中之任何者形成之任何子範圍。
層深度及氫濃度係藉由此項技術中已知之次級離子質譜法(secondary ion mass spectrometry; SIMS)技術來量測。SIMS技術能夠量測在一給定深度處之氫濃度,但不能夠辨別玻璃基底物件中存在之氫物質。為此原因,所有氫物質皆對SIMS量測之氫濃度有影響。如本文中所利用,層深度(depth of layer; DOL)指在玻璃基底物件之表面下方的第一深度,在該第一深度處,氫濃度等於在玻璃基底物件之中心處的氫濃度。此定義說明在處理前的玻璃基底基板之氫濃度,使得層濃度指藉由處理製程增添的氫之深度。實際上,在玻璃基底物件之中心處的氫濃度可藉由在氫濃度變得實質上恆定的距玻璃基底物件之表面之深度處之氫濃度來估算,因為預期在此深度與玻璃基底物件之中心之間,氫濃度不改變。此估算允許在不量測貫穿玻璃基底物件之全部深度之氫濃度之情況下判定DOL。Layer depth and hydrogen concentration are measured by secondary ion mass spectrometry (SIMS) techniques known in the art. The SIMS technique is capable of measuring the hydrogen concentration at a given depth, but is not capable of distinguishing the hydrogen species present in glass substrate objects. For this reason, all hydrogen species contribute to the hydrogen concentration measured by SIMS. As used herein, depth of layer (DOL) refers to the first depth below the surface of a glass substrate article at which the hydrogen concentration is equal to the hydrogen concentration at the center of the glass substrate article. This definition accounts for the hydrogen concentration of the glass base substrate before processing, such that the layer concentration refers to the depth of hydrogen added by the processing process. In fact, the hydrogen concentration at the center of the glass substrate article can be estimated from the hydrogen concentration at a depth from the surface of the glass substrate article where the hydrogen concentration becomes substantially constant, since the hydrogen concentration is not expected to change between this depth and the center of the glass substrate article. This estimation allows DOL to be determined without measuring the hydrogen concentration throughout the full depth of the glass substrate object.
在一些實施例中,玻璃基底物件之厚度之全部可為一含氫層之部分。當玻璃基底基板之處理在用於氫物質自每一暴露之表面擴散至玻璃基底物件之中心的足夠條件下在足夠時間內延長時,可生產此玻璃基底物件。在一些實施例中,在將玻璃基底物件之表面暴露於相同處理條件之情況下,最小氫濃度可位於玻璃基底物件之厚度之一半處,使得含氫層在玻璃基底物件之中心處會合。在此等實施例中,DOL可位於玻璃基底物件之厚度之一半處。在一些實施例中,該等玻璃基底物件可不包括無添加之氫物質之一區域。在一些實施例中,可在一濕環境中處理玻璃基底物件,使得添加之氫物質之濃度貫穿玻璃基底物件均等,且氫濃度不隨在玻璃基底物件之表面下方的深度而變化。根據此等實施例之玻璃基底物件將不展現如本文中定義之DOL,因為在玻璃基底物件之中心處的氫濃度將等效於在所有其他深度處之氫濃度。In some embodiments, the entire thickness of the glass substrate article may be part of a hydrogen-containing layer. The glass-based article can be produced when the processing of the glass-based substrate is prolonged under sufficient conditions for hydrogen species to diffuse from each exposed surface to the center of the glass-based article. In some embodiments, with the surface of the glass-based article exposed to the same processing conditions, the minimum hydrogen concentration may be at half the thickness of the glass-based article such that the hydrogen-containing layers meet at the center of the glass-based article. In such embodiments, the DOL may be located at half the thickness of the glass substrate article. In some embodiments, the glass substrate articles may not include a region free of added hydrogen species. In some embodiments, the glass-based article may be processed in a wet environment such that the concentration of added hydrogen species is uniform throughout the glass-based article and the hydrogen concentration does not vary with depth below the surface of the glass-based article. Glass-based objects according to these embodiments will not exhibit a DOL as defined herein because the hydrogen concentration at the center of the glass-based object will be equivalent to the hydrogen concentration at all other depths.
該等玻璃基底物件對維氏凹痕開裂有高度阻性。高維氏凹痕開裂阻性對玻璃基底物件賦予高抗損壞性。並不希望受到任何特徵理論束縛,玻璃基底物件之水含量可減小含氫層之局部黏度,使得發生局部流動而非開裂。玻璃基底物件之維氏凹痕開裂閾值在不使用習知強化技術(諸如,針對玻璃中之較小鹼離子的大鹼離子之交換、熱回火或具有熱膨脹係數不匹配之玻璃層之層壓)之情況下達成。玻璃基底物件展現大於或等於1 kgf之維氏凹痕開裂閾值,諸如,大於或等於2 kgf、大於或等於3 kgf、大於或等於4 kgf、大於或等於5 kgf、大於或等於6 kgf、大於或等於7 kgf、大於或等於8 kgf、大於或等於9 kgf、大於或等於10 kgf、大於或等於11 kgf、大於或等於12 kgf、大於或等於13 kgf、大於或等於14 kgf、大於或等於15 kgf、大於或等於16 kgf、大於或等於17 kgf、大於或等於18 kgf、大於或等於19 kgf、大於或等於20 kgf、大於或等於21 kgf、大於或等於22 kgf、大於或等於23 kgf、大於或等於24 kgf、大於或等於25 kgf、大於或等於26 kgf、大於或等於27 kgf、大於或等於28 kgf、大於或等於29 kgf、大於或等於30 kgf或更大。在一些實施例中,玻璃基底物件展現自大於或等於1 kgf至小於或等於30 kgf之維氏凹痕開裂閾值,諸如,自大於或等於2 kgf至小於或等於29 kgf、自大於或等於3 kgf至小於或等於28 kgf、自大於或等於4 kgf至小於或等於27 kgf、自大於或等於5 kgf至小於或等於26 kgf、自大於或等於6 kgf至小於或等於25 kgf、自大於或等於7 kgf至小於或等於24 kgf、自大於或等於8 kgf至小於或等於23 kgf、自大於或等於9 kgf至小於或等於22 kgf、自大於或等於10 kgf至小於或等於21 kgf、自大於或等於11 kgf至小於或等於20 kgf、自大於或等於12 kgf至小於或等於19 kgf、自大於或等於13 kgf至小於或等於18 kgf、自大於或等於14 kgf至小於或等於17 kgf、自大於或等於15 kgf至小於或等於16 kgf或由此等端點中之任何者形成之任何子範圍。These glass substrate articles are highly resistant to Vickers dent cracking. High Vickers dent crack resistance imparts high damage resistance to glass substrate articles. Without wishing to be bound by any particular theory, the water content of the glass substrate article can reduce the local viscosity of the hydrogen-containing layer, allowing localized flow rather than cracking. Vickers dent cracking thresholds for glass-based objects are achieved without the use of conventional strengthening techniques such as exchange of large base ions for smaller base ions in the glass, thermal tempering, or lamination of glass layers with mismatched coefficients of thermal expansion. Glass substrate articles exhibiting a Vickers dent cracking threshold of 1 kgf or greater, such as 2 kgf or greater, 3 kgf or greater, 4 kgf or greater, 5 kgf or greater, 6 kgf or greater, 7 kgf or greater, 8 kgf or greater, 9 kgf or greater, 10 kgf or greater, 11 kgf or greater, 12 kgf or greater, 13 kgf or greater kgf, 14 kgf or more, 15 kgf or more, 16 kgf or more, 17 kgf or more, 18 kgf or more, 19 kgf or more, 20 kgf or more, 21 kgf or more, 22 kgf or more, 23 kgf or more, 24 kgf or more, 25 kgf or more, 26 kgf or more, or 26 kgf or more 27 kgf, greater than or equal to 28 kgf, greater than or equal to 29 kgf, greater than or equal to 30 kgf or greater. In some embodiments, the glass substrate article exhibits a Vickers dent cracking threshold from greater than or equal to 1 kgf to less than or equal to 30 kgf, such as from greater than or equal to 2 kgf to less than or equal to 29 kgf, from greater than or equal to 3 kgf to less than or equal to 28 kgf, from greater than or equal to 4 kgf to less than or equal to 27 kgf, from greater than or equal to 5 kgf to less than or equal to 26 kgf, from greater than or equal to 6 kgf to less than or equal to or equal to 25 kgf, from greater than or equal to 7 kgf to less than or equal to 24 kgf, from greater than or equal to 8 kgf to less than or equal to 23 kgf, from greater than or equal to 9 kgf to less than or equal to 22 kgf, from greater than or equal to 10 kgf to less than or equal to 21 kgf, from greater than or equal to 11 kgf to less than or equal to 20 kgf, from greater than or equal to 12 kgf to less than or equal to 19 kgf, from greater than or equal 13 kgf to less than or equal to 18 kgf, from greater than or equal to 14 kgf to less than or equal to 17 kgf, from greater than or equal to 15 kgf to less than or equal to 16 kgf, or any subrange formed by any of these endpoints.
維氏開裂初始閾值(或凹痕斷裂閾值)係藉由維式凹痕計量測。維氏開裂初始閾值為玻璃之抗凹痕損壞性之量測。測試涉及使用面之間具有136°之一角度的基於正方形之金字塔形金剛石凹痕計,被稱作維氏凹痕計。維氏凹痕計與在標準微硬度測試(如在ASTM-E384-11中所描述)中使用之凹痕計相同。選擇最少五個試樣來表示感興趣之玻璃類型及/或樣本。對於每一試樣,將多個五凹痕集合引入至試樣表面。每一五凹痕集合係在一給定負載下引入,其中每一個別凹痕分開最小5 mm,且靠近一試樣邊緣不小於5 mm。對於測試負載≥ 2 kg,使用50公斤/分鐘之凹痕計裝載/卸載速率。對於測試負載< 2 kg,使用5公斤/分鐘之速率。利用在目標負載處10秒之停留(亦即,保持)時間。機器在停留週期期間維持負載控制。在至少12小時之一週期後,使用500X放大率下之複合顯微鏡在反射光下檢驗凹痕。接著針對每一凹痕記下中間/徑向開裂(自凹痕沿著垂直於物件之主平面的一平面延伸之開裂)或試樣斷裂之存在或不存在。注意,側向開裂(沿著平行於物件之主平面的一平面延伸之開裂)之形成不被視為指示展現閾值行為,此係由於中間/徑向開裂之形成或試樣斷裂對於此測試具有利害關係。將試樣閾值定義為最低連續凹痕負載(其包括符合閾值的大於50%之個別凹痕)之中點。舉例而言,若在一個別試樣內,在5 kg負載下誘發之2/5(40%)的凹痕已超過閾值,且在6 kg負載下誘發之3/5(60%)的凹痕已超過閾值,則試樣閾值將定義為大於5 kg。亦可針對每一樣本報告所有試樣中點之範圍(最低值至最高值)。將預測試、測試及後測試環境控制至23±2℃及50±5% Rh,以使試樣之疲勞(應力腐蝕)行為之變化最小化。The Vickers crack initiation threshold (or dent fracture threshold) was measured by Vickers dent measurement. The Vickers crack initiation threshold is a measure of the glass' resistance to dent damage. The test involved the use of a square-based pyramid-shaped diamond indenter with an angle between the faces of 136°, known as a Vickers indenter. The Vickers indenter is the same as that used in standard microhardness testing (as described in ASTM-E384-11). Select a minimum of five specimens representing glass types and/or samples of interest. For each sample, multiple sets of five indentations were introduced into the sample surface. Each set of five dents is introduced under a given load, with each individual dent separated by a minimum of 5 mm and not closer than 5 mm to a specimen edge. For test loads ≥ 2 kg, use an indenter loading/unloading rate of 50 kg/min. For test loads < 2 kg, use a rate of 5 kg/min. A dwell (ie, hold) time of 10 seconds at the target load was utilized. The machine maintains load control during the dwell period. After a period of at least 12 hours, examine the dents under reflected light using a compound microscope at 500X magnification. The presence or absence of intermediate/radial cracks (cracks extending from the dent along a plane perpendicular to the main plane of the article) or specimen fractures were then noted for each dent. Note that the formation of lateral cracks (cracks extending along a plane parallel to the main plane of the article) is not considered indicative of exhibiting threshold behavior, as the formation of medial/radial cracks or specimen fracture is of interest for this test. The sample threshold is defined as the midpoint of the lowest continuous dent load that includes greater than 50% of individual dents meeting the threshold. For example, if within an individual specimen, 2/5 (40%) of the dents induced at a 5 kg load exceeded the threshold and 3/5 (60%) of the dents induced at a 6 kg load exceeded the threshold, then the specimen threshold would be defined as greater than 5 kg. The range (lowest to highest) of all sample midpoints can also be reported for each sample. The pre-test, test and post-test environments were controlled to 23±2°C and 50±5% Rh to minimize changes in the fatigue (stress corrosion) behavior of the specimens.
不希望受任何特定理論束縛,玻璃基底物件之含氫層可為氫物質針對玻璃基底基板之組成中含有的離子之相互擴散之結果。單價含氫物質(諸如,H3
O+
及/或H+
)可替換玻璃基底基板組成中含有之鹼離子以形成玻璃基底物件。含氫物質替換的鹼離子之大小對玻璃基底基板中的含氫物質之擴散性有影響,此係因為較大鹼離子產生有助於相互擴散機制之較大空隙空間。舉例而言,水合氫離子(H3
O+
)具有靠近鉀之離子半徑且比鋰之離子半徑大得多之一離子半徑。觀測到,當玻璃基底基板含有鉀時,含氫物質在玻璃基底基板中之擴散性比當玻璃基底基板含有鋰時顯著高兩個數量級。此觀測到之行為亦可指示水合氫離子為擴散至玻璃基底基板內之主要單價含氫物質。在下表I中報告用於鹼離子及水合氫離子之離子半徑。如表I中所展示,銣及銫具有比水合氫離子顯著大之離子半徑,此可導致比針對鉀觀測到之氫擴散性高的氫擴散性。
在一些實施例中,具有含氫離子之玻璃基底基板中的鹼離子之替換可產生自玻璃基底物件之表面延伸至玻璃基底物件內至一壓縮深度的一壓縮應力層。如本文中所使用,壓縮深度(depth of layer; DOC)意謂玻璃基底物件中之應力自壓縮改變至拉伸處之深度。因此,玻璃基底物件亦含有具有一最大中央拉伸(central tension; CT)之一拉伸應力區域,使得在玻璃基底物件內之力平衡。不希望受任何理論束縛,壓縮應力區域可為具有大於其替換之離子之一離子半徑的含氫離子之交換之結果。In some embodiments, the displacement of alkali ions in a glass base substrate with hydrogen ions can produce a compressive stress layer extending from the surface of the glass base article into the glass base article to a compressive depth. As used herein, depth of layer (DOC) means the depth at which stress in a glass substrate object changes from compression to tension. Therefore, the glass-based object also contains a tensile stress region with a maximum central tension (CT) such that the forces within the glass-based object are balanced. Without wishing to be bound by any theory, regions of compressive stress may be the result of the exchange of hydrogen-containing ions having an ionic radius greater than one of the ions they replace.
在一些實施例中,壓縮應力層可包括大於或等於100 MPa之一壓縮應力,諸如,大於或等於105 MPa、大於或等於110 MPa、大於或等於115 MPa、大於或等於120 MPa、大於或等於125 MPa、大於或等於130 MPa、大於或等於135 MPa或更大。在一些實施例中,壓縮應力層可包括自大於或等於100 MPa至小於或等於150 MPa之一壓縮應力,諸如,自大於或等於105 MPa至小於或等於145 MPa、自大於或等於110 MPa至小於或等於140 MPa、自大於或等於115 MPa至小於或等於135 MPa、自大於或等於120 MPa至小於或等於130 MPa、125 MPa或自此等端點中之任何者形成之任何子範圍。In some embodiments, the compressive stress layer may comprise a compressive stress of 100 MPa or greater, such as 105 MPa or greater, 110 MPa or greater, 115 MPa or greater, 120 MPa or greater, 125 MPa or greater, 130 MPa or greater, 135 MPa or greater, or greater. In some embodiments, the compressive stress layer may comprise a compressive stress ranging from greater than or equal to 100 MPa to less than or equal to 150 MPa, such as from greater than or equal to 105 MPa to less than or equal to 145 MPa, from greater than or equal to 110 MPa to less than or equal to 140 MPa, from greater than or equal to 115 MPa to less than or equal to 135 MPa, from greater than or equal to 120 MPa to less than or equal to 130 MPa, 125 MPa, or from these endpoints Any subrange formed by any of them.
在一些實施例中,壓縮應力層之DOC可大於或等於75 MPa,諸如,大於或等於80 MPa、大於或等於85 MPa、大於或等於90 MPa、大於或等於95 MPa、大於或等於100 MPa或更大。在一些實施例中,壓縮應力層之DOC可處於自大於或等於75 μm至小於或等於115 μm,諸如,自大於或等於80 μm至小於或等於110 μm、自大於或等於85 μm至小於或等於105 μm、自大於或等於90 μm至小於或等於100 μm、95 μm或可自此等端點中之任何者形成之任何子範圍。In some embodiments, the DOC of the compressive stress layer may be greater than or equal to 75 MPa, such as, greater than or equal to 80 MPa, greater than or equal to 85 MPa, greater than or equal to 90 MPa, greater than or equal to 95 MPa, greater than or equal to 100 MPa, or greater. In some embodiments, the DOC of the compressive stress layer may be in a range from greater than or equal to 75 μm to less than or equal to 115 μm, such as from greater than or equal to 80 μm to less than or equal to 110 μm, from greater than or equal to 85 μm to less than or equal to 105 μm, from greater than or equal to 90 μm to less than or equal to 100 μm, 95 μm, or any subrange that may be formed from any of these endpoints.
在一些實施例中,玻璃基底物件可具有大於或等於0.05t 之一DOC,其中t為玻璃基底物件之厚度,諸如,大於或等於0.06t 、大於或等於0.07t 、大於或等於0.08t 、大於或等於0.09t 、大於或等於0.10t 、大於或等於0.11t 、大於或等於0.12t 或更大。在一些實施例中,玻璃基底物件可具有自大於或等於0.05t 至小於或等於0.20t 之一DOC,諸如,自大於或等於0.06t 至小於或等於0.19t 、自大於或等於0.07t 至小於或等於0.18t 、自大於或等於0.08t 至小於或等於0.17t 、自大於或等於0.09t 至小於或等於0.16t 、自大於或等於0.10t 至小於或等於0.15t 、自大於或等於0.11t 至小於或等於0.14t 、自大於或等於0.12t 至小於或等於0.13t 或自此等端點中之任何者形成之任何子範圍。In some embodiments, the glass-based article can have a DOC of 0.05 t or greater, where t is the thickness of the glass-based article, such as 0.06 t or greater, 0.07 t or greater, 0.08 t or greater, 0.09 t or greater, 0.10 t or greater, 0.11 t or greater, 0.12 t or greater, or greater.在一些實施例中,玻璃基底物件可具有自大於或等於0.05 t至小於或等於0.20 t之一DOC,諸如,自大於或等於0.06 t至小於或等於0.19 t 、自大於或等於0.07 t至小於或等於0.18 t 、自大於或等於0.08 t至小於或等於0.17 t 、自大於或等於0.09 t至小於或等於0.16 t 、自大於或等於0.10 t至小於或等於0.15 t 、自大於或等於0.11 t至小於或等於0.14 t 、自大於或等於0.12 t至小於或等於0.13 t或自此等端點中之任何者形成之任何子範圍。
在一些實施例中,玻璃基底物件之CT可大於或等於10 Mpa,諸如,大於或等於11 MPa、大於或等於12 MPa、大於或等於13 MPa、大於或等於14 MPa、大於或等於15 MPa、大於或等於16 MPa、大於或等於17 MPa、大於或等於18 MPa、大於或等於19 MPa、大於或等於20 MPa、大於或等於22 MPa、大於或等於24 MPa、大於或等於26 MPa、大於或等於28 MPa、大於或等於30 MPa、大於或等於32 MPa或更大。在一些實施例中,玻璃基底物件之CT可自大於或等於10 Mpa至小於或等於35 MPa,諸如,自大於或等於11 Mpa至小於或等於34 MPa、自大於或等於12 Mpa至小於或等於33 MPa、自大於或等於13 Mpa至小於或等於32 MPa、自大於或等於14 Mpa至小於或等於32 MPa、自大於或等於15 Mpa至小於或等於31 MPa、自大於或等於16 Mpa至小於或等於30 MPa、自大於或等於17 Mpa至小於或等於28 MPa、自大於或等於18 Mpa至小於或等於26 MPa、自大於或等於19 Mpa至小於或等於24 MPa、自大於或等於20 Mpa至小於或等於22 MPa或自此等端點中之任何者形成之任何子範圍。In some embodiments, the CT of the glass substrate article may be greater than or equal to 10 MPa, such as, greater than or equal to 11 MPa, greater than or equal to 12 MPa, greater than or equal to 13 MPa, greater than or equal to 14 MPa, greater than or equal to 15 MPa, greater than or equal to 16 MPa, greater than or equal to 17 MPa, greater than or equal to 18 MPa, greater than or equal to 19 MPa, greater than or equal to 20 MPa, greater than or equal to 22 MPa, greater than or equal to, greater than or equal to 24 MPa, greater than or equal to 26 MPa, greater than or equal to 28 MPa, greater than or equal to 30 MPa, greater than or equal to 32 MPa or greater. In some embodiments, the CT of the glass substrate article can be from greater than or equal to 10 MPa to less than or equal to 35 MPa, such as from greater than or equal to 11 MPa to less than or equal to 34 MPa, from greater than or equal to 12 MPa to less than or equal to 33 MPa, from greater than or equal to 13 MPa to less than or equal to 32 MPa, from greater than or equal to 14 MPa to less than or equal to 32 MPa, from greater than or equal to 15 MPa to less than or equal to 31 MPa, from greater than or equal to 1 6 MPa to less than or equal to 30 MPa, from greater than or equal to 17 MPa to less than or equal to 28 MPa, from greater than or equal to 18 MPa to less than or equal to 26 MPa, from greater than or equal to 19 MPa to less than or equal to 24 MPa, from greater than or equal to 20 MPa to less than or equal to 22 MPa, or any subrange formed from any of these endpoints.
使用諸如由Orihara Industrial Co., Ltd.(日本)製造之FSM-6000(FSM)之市售儀器,藉由表面應力計來量測壓縮應力(包括表面CS)。表面應力量測結果依賴於與玻璃之雙折射有關的應力光學係數(stress optical coefficient; SOC)之準確量測。SOC又根據在題為「Standard Test Method for Measurement of Glass Stress-Optical Coefficient」之ASTM標準C770-16中描述之程序C(玻璃碟方法)來量測,該標準之內容被以引用的方式全部併入本文中。DOC係藉由FSM量測。使用此項技術中已知之散射光偏光鏡(SCALP)來量測最大中央拉伸(central tension; CT)值。Compressive stress (including surface CS) was measured by a surface strain gauge using a commercially available instrument such as FSM-6000 (FSM) manufactured by Orihara Industrial Co., Ltd. (Japan). Surface stress measurements rely on accurate measurements of the stress optical coefficient (SOC), which is related to the birefringence of the glass. SOC is also measured according to Procedure C (glass dish method) described in ASTM Standard C770-16 entitled "Standard Test Method for Measurement of Glass Stress-Optical Coefficient," the contents of which are incorporated herein by reference in their entirety. DOC was measured by FSM. Maximum central tension (CT) values were measured using a scattered light polarizer (SCALP) known in the art.
玻璃基底物件可自具有任何適當組成之玻璃基底基板形成。可具體地選擇玻璃基底基板之組成以促進含氫物質之擴散,使得可高效地形成包括一含氫層之玻璃基底物件。在一些實施例中,玻璃基底基板可具有包括SiO2 、Al2 O3 及P2 O5 之一組成。在一些實施例中,玻璃基底基板可另外包括鹼金屬氧化物,諸如,Li2 O、Na2 O、K2 O、Rb2 O及Cs2 O中之至少一者。在一些實施例中,玻璃基底基板可實質上無或無鋰及鈉中之至少一者。在一些實施例中,在含氫物質至玻璃基底基板內之擴散後,玻璃基底物件可具有與玻璃基底基板之組成大致相同之一總組成。在一些實施例中,氫物質可不擴散至該玻璃基底物件之中心。換言之,玻璃基底物件之中心為受到水蒸氣處理最小影響之區。為此原因,在於一含水環境中處理前,玻璃基底物件之中心可具有與玻璃基底基板之組成實質上相同或相同之一組成。Glass-based articles may be formed from glass-based substrates of any suitable composition. The composition of the glass-based substrate can be specifically selected to facilitate the diffusion of hydrogen-containing species so that glass-based articles including a hydrogen-containing layer can be efficiently formed. In some embodiments, the glass base substrate may have a composition including SiO 2 , Al 2 O 3 , and P 2 O 5 . In some embodiments, the glass base substrate may additionally include an alkali metal oxide, such as at least one of Li 2 O, Na 2 O, K 2 O, Rb 2 O, and Cs 2 O. In some embodiments, the glass base substrate can be substantially free or free of at least one of lithium and sodium. In some embodiments, after diffusion of the hydrogen-containing species into the glass base substrate, the glass base article can have an overall composition that is substantially the same as that of the glass base substrate. In some embodiments, hydrogen species may not diffuse into the center of the glass substrate article. In other words, the center of the glass-based article was the area least affected by the water vapor treatment. For this reason, the center of the glass-based article may have a composition that is substantially the same or identical to that of the glass-based substrate prior to processing in an aqueous environment.
玻璃基底基板可包括任何適當量之SiO2 。SiO2 為最大成分,且因而,SiO2 為自玻璃組合物形成的玻璃網路之主要成分。若玻璃組合物中的SiO2 之濃度過高,則玻璃組合物之可形成性可減小,因為SiO2 之較高濃度增加了熔化玻璃之困難,此又不利地影響玻璃之可形成性。在一些實施例中,玻璃基底基板可包括自大於或等於45莫耳%至小於或等於75莫耳%之量的SiO2 ,諸如,自大於或等於46莫耳%至小於或等於74莫耳%、自大於或等於47莫耳%至小於或等於73莫耳%、自大於或等於48莫耳%至小於或等於72莫耳%、自大於或等於49莫耳%至小於或等於71莫耳%、自大於或等於50莫耳%至小於或等於70莫耳%、自大於或等於51莫耳%至小於或等於69莫耳%、自大於或等於52莫耳%至小於或等於68莫耳%、自大於或等於53莫耳%至小於或等於67莫耳%、自大於或等於54莫耳%至小於或等於66莫耳%、自大於或等於55莫耳%至小於或等於65莫耳%、自大於或等於56莫耳%至小於或等於64莫耳%、自大於或等於57莫耳%至小於或等於63莫耳%、自大於或等於58莫耳%至小於或等於62莫耳%、自大於或等於59莫耳%至小於或等於61莫耳%、60莫耳%或由此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於55莫耳%至小於或等於69莫耳%之量的SiO2 ,諸如,自大於或等於58莫耳%至小於或等於63莫耳%或自此等端點中之任何者形成之任何子範圍。The glass base substrate can include any suitable amount of SiO2 . Si02 is the largest constituent, and thus, Si02 is the main constituent of the glass network formed from the glass composition. If the concentration of SiO2 in the glass composition is too high, the formability of the glass composition can be reduced because the higher concentration of SiO2 increases the difficulty of melting the glass, which in turn adversely affects the formability of the glass.在一些實施例中,玻璃基底基板可包括自大於或等於45莫耳%至小於或等於75莫耳%之量的SiO 2 ,諸如,自大於或等於46莫耳%至小於或等於74莫耳%、自大於或等於47莫耳%至小於或等於73莫耳%、自大於或等於48莫耳%至小於或等於72莫耳%、自大於或等於49莫耳%至小於或等於71莫耳%、自大於或等於50莫耳%至小於或等於70莫耳%、自大於或等於51莫耳%至小於或等於69莫耳%、自大於或等於52莫耳%至小於或等於68莫耳%、自大於或等於53莫耳%至小於或等於67莫耳%、自大於或等於54莫耳%至小於或等於66莫耳%、自大於或等於55莫耳%至小於或等於65莫耳%、自大於或等於56莫耳%至小於或等於64莫耳%、自大於或等於57莫耳%至小於或等於63莫耳%、自大於或等於58莫耳%至小於或等於62莫耳%、自大於或等於59莫耳%至小於或等於61莫耳%、60莫耳%或由此等端點中之任何者形成之任何子範圍。 In some embodiments, the glass base substrate can include Si02 in an amount from greater than or equal to 55 mol % to less than or equal to 69 mol %, such as from greater than or equal to 58 mol % to less than or equal to 63 mol % or any subrange formed from any of these endpoints.
玻璃基底基板可包括任何適當量之Al2 O3 。Al2 O3 可充當玻璃網路形成者,類似於SiO2 。Al2 O3 歸因於其在自玻璃組合物形成之玻璃熔體中的四面體配位,可增大玻璃組合物之黏度,從而當Al2 O3 之量過高時,降低玻璃組合物之可形成性。然而,當Al2 O3 之濃度對照SiO2 之濃度及玻璃組合物中的鹼氧化物之濃度平衡時,Al2 O3 可降低玻璃熔體之液線溫度,藉此增強液線黏度且改良玻璃組合物與某些形成製程(諸如,融合形成製程)之相容性。玻璃基底基板中的Al2 O3 之包括防止相位分離且減少玻璃中的非橋氧(non-bridging oxygen; NBO)之數目。另外,Al2 O3 可改良離子交換之有效性。在一些實施例中,玻璃基底基板可包括自大於或等於3莫耳%至小於或等於20莫耳%之量的Al2 O3 ,諸如,自大於或等於4莫耳%至小於或等於19莫耳%、自大於或等於5莫耳%至小於或等於18莫耳%、自大於或等於6莫耳%至小於或等於17莫耳%、自大於或等於7莫耳%至小於或等於16莫耳%、自大於或等於8莫耳%至小於或等於15莫耳%、自大於或等於9莫耳%至小於或等於14莫耳%、自大於或等於10莫耳%至小於或等於13莫耳%、自大於或等於11莫耳%至小於或等於12莫耳%或由此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於5莫耳%至小於或等於15莫耳%之量的Al2 O3 ,諸如,自大於或等於7莫耳%至小於或等於14莫耳%或自此等端點中之任何者形成之任何子範圍。The glass-based substrate can include any suitable amount of Al 2 O 3 . Al 2 O 3 can act as a glass network former, similar to SiO 2 . Al 2 O 3 can increase the viscosity of the glass composition due to its tetrahedral coordination in the glass melt formed from the glass composition, thereby reducing the formability of the glass composition when the amount of Al 2 O 3 is too high. However, when the concentration of Al2O3 is balanced against the concentration of SiO2 and the concentration of alkali oxides in the glass composition, Al2O3 can lower the liquidus temperature of the glass melt, thereby enhancing the liquidus viscosity and improving the compatibility of the glass composition with certain forming processes, such as fusion forming processes. The inclusion of Al 2 O 3 in the glass base substrate prevents phase separation and reduces the number of non-bridging oxygen (NBO) in the glass. In addition, Al 2 O 3 can improve the effectiveness of ion exchange.在一些實施例中,玻璃基底基板可包括自大於或等於3莫耳%至小於或等於20莫耳%之量的Al 2 O 3 ,諸如,自大於或等於4莫耳%至小於或等於19莫耳%、自大於或等於5莫耳%至小於或等於18莫耳%、自大於或等於6莫耳%至小於或等於17莫耳%、自大於或等於7莫耳%至小於或等於16莫耳%、自大於或等於8莫耳%至小於或等於15莫耳%、自大於或等於9莫耳%至小於或等於14莫耳%、自大於或等於10莫耳%至小於或等於13莫耳%、自大於或等於11莫耳%至小於或等於12莫耳%或由此等端點中之任何者形成之任何子範圍。 In some embodiments, the glass base substrate can include Al2O3 in an amount from greater than or equal to 5 mol % to less than or equal to 15 mol %, such as from greater than or equal to 7 mol % to less than or equal to 14 mol % or any subrange formed from any of these endpoints.
玻璃基底基板可包括足以產生所要的氫擴散性之任何量之P2 O5 。玻璃基底基板中的磷之包括促進較快之相互擴散,與交換離子對無關。因此,含磷之玻璃基底基板允許包括含氫層的玻璃基底物件之高效形成。P2 O5 之包括亦允許在相對短的處理時間中生成具有深的層深度(例如,大於約10 μm)之玻璃基底物件。在一些實施例中,玻璃基底基板可包括自大於或等於4莫耳%至小於或等於15莫耳%之量的P2 O5 ,諸如,自大於或等於5莫耳%至小於或等於14莫耳%、自大於或等於6莫耳%至小於或等於13莫耳%、自大於或等於7莫耳%至小於或等於12莫耳%、自大於或等於8莫耳%至小於或等於11莫耳%、自大於或等於9莫耳%至小於或等於10莫耳%或由此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於5莫耳%至小於或等於15莫耳%之量的P2 O5 ,諸如,自大於或等於6莫耳%至小於或等於15莫耳%、自大於或等於5莫耳%至小於或等於10莫耳%、自大於或等於6莫耳%至小於或等於10莫耳%、自大於或等於7莫耳%至小於或等於10莫耳%或由此等端點中之任何者形成之任何子範圍。The glass base substrate can include any amount of P2O5 sufficient to produce the desired hydrogen diffusivity. The inclusion of phosphorus in the glass base substrate promotes faster interdiffusion independent of exchanged ion pairs. Accordingly, phosphorous-containing glass-based substrates allow efficient formation of glass-based articles that include hydrogen-containing layers. The inclusion of P 2 O 5 also allows the generation of glass-based objects with deep layer depths (eg, greater than about 10 μm) in relatively short processing times. In some embodiments , the glass base substrate may include P2O5 in an amount from 4 mol % or greater to 15 mol % or less, such as from 5 mol % or greater to 14 mol % Less than or equal to 10 mol % or any subrange formed by any of these endpoints. In some embodiments, the glass base substrate may include P2O5 in an amount from 5 mol % or more to 15 mol % or less, such as from 6 mol % or more to 15 mol % or less, 5 mol % or more to 10 mol % or less, 6 mol % or more to 10 mol % or less, 7 mol % or more to 10 mol % or less, or any of these endpoints any subrange of .
玻璃基底基板可包括任何適當量之鹼金屬氧化物。鹼金屬氧化物促進離子交換。玻璃組合物中的鹼金屬氧化物(例如,Li2 O、Na2 O及K2 O以及包括Cs2 O及Rb2 O之其他鹼金屬氧化物)之總和可被稱作「R2 O」,且R2 O可按莫耳%來表達。在一些實施例中,玻璃基底基板可實質上無或無鋰及鈉中之至少一者。在一些實施例中,玻璃組合物包含大於或等於6莫耳%之量的R2 O,諸如,大於或等於7莫耳%、大於或等於8莫耳%、大於或等於9莫耳%、大於或等於10莫耳%、大於或等於11莫耳%、大於或等於12莫耳%、大於或等於13莫耳%、大於或等於14莫耳%、大於或等於15莫耳%、大於或等於16莫耳%、大於或等於17莫耳%、大於或等於18莫耳%、大於或等於19莫耳%、大於或等於20莫耳%、大於或等於21莫耳%、大於或等於22莫耳%、大於或等於23莫耳%或大於或等於24莫耳%。在一或多個實施例中,玻璃組合物包含小於或等於25莫耳%之量的R2 O,諸如,小於或等於24莫耳%、小於或等於23莫耳%、小於或等於22莫耳%、小於或等於21莫耳%、小於或等於20莫耳%、小於或等於19莫耳%、小於或等於18莫耳%、小於或等於17莫耳%、小於或等於16莫耳%、小於或等於15莫耳%、小於或等於14莫耳%、小於或等於13莫耳%、小於或等於12莫耳%、小於或等於11莫耳%、小於或等於10莫耳%、小於或等於9莫耳%、小於或等於8莫耳%或小於或等於7莫耳%。應理解,在實施例中,以上範圍中之任何者可與任一其他範圍組合。在一些實施例中,玻璃組合物包含自大於或等於6.0莫耳%至小於或等於25.0莫耳%之量的R2 O,諸如,自大於或等於7.0莫耳%至小於或等於24.0莫耳%、自大於或等於8.0莫耳%至小於或等於23.0莫耳%、自大於或等於9.0莫耳%至小於或等於22.0莫耳%、自大於或等於10.0莫耳%至小於或等於21.0莫耳%、自大於或等於11.0莫耳%至小於或等於20.0莫耳%、自大於或等於12.0莫耳%至小於或等於19.0莫耳%、自大於或等於13.0莫耳%至小於或等於18.0莫耳%、自大於或等於14.0莫耳%至小於或等於17.0莫耳%或自大於或等於15.0莫耳%至小於或等於16.0莫耳%,及在前述值之間的所有範圍及子範圍。The glass base substrate can include any suitable amount of alkali metal oxide. Alkali metal oxides facilitate ion exchange. The sum of alkali metal oxides (eg, Li2O , Na2O , and K2O, and other alkali metal oxides including Cs2O and Rb2O ) in the glass composition may be referred to as " R2O , " and R2O may be expressed in mole percent. In some embodiments, the glass base substrate can be substantially free or free of at least one of lithium and sodium.在一些實施例中,玻璃組合物包含大於或等於6莫耳%之量的R 2 O,諸如,大於或等於7莫耳%、大於或等於8莫耳%、大於或等於9莫耳%、大於或等於10莫耳%、大於或等於11莫耳%、大於或等於12莫耳%、大於或等於13莫耳%、大於或等於14莫耳%、大於或等於15莫耳%、大於或等於16莫耳%、大於或等於17莫耳%、大於或等於18莫耳%、大於或等於19莫耳%、大於或等於20莫耳%、大於或等於21莫耳%、大於或等於22莫耳%、大於或等於23莫耳%或大於或等於24莫耳%。在一或多個實施例中,玻璃組合物包含小於或等於25莫耳%之量的R 2 O,諸如,小於或等於24莫耳%、小於或等於23莫耳%、小於或等於22莫耳%、小於或等於21莫耳%、小於或等於20莫耳%、小於或等於19莫耳%、小於或等於18莫耳%、小於或等於17莫耳%、小於或等於16莫耳%、小於或等於15莫耳%、小於或等於14莫耳%、小於或等於13莫耳%、小於或等於12莫耳%、小於或等於11莫耳%、小於或等於10莫耳%、小於或等於9莫耳%、小於或等於8莫耳%或小於或等於7莫耳%。 It should be understood that any of the above ranges may be combined with any other range in an embodiment.在一些實施例中,玻璃組合物包含自大於或等於6.0莫耳%至小於或等於25.0莫耳%之量的R 2 O,諸如,自大於或等於7.0莫耳%至小於或等於24.0莫耳%、自大於或等於8.0莫耳%至小於或等於23.0莫耳%、自大於或等於9.0莫耳%至小於或等於22.0莫耳%、自大於或等於10.0莫耳%至小於或等於21.0莫耳%、自大於或等於11.0莫耳%至小於或等於20.0莫耳%、自大於或等於12.0莫耳%至小於或等於19.0莫耳%、自大於或等於13.0莫耳%至小於或等於18.0莫耳%、自大於或等於14.0莫耳%至小於或等於17.0莫耳%或自大於或等於15.0莫耳%至小於或等於16.0莫耳%,及在前述值之間的所有範圍及子範圍。
在一些實施例中,鹼金屬氧化物可為K2 O。K2 O之包括允許在暴露於含水環境後氫物質至玻璃基板內之高效交換。在一些實施例中,玻璃基底基板可包括自大於或等於6莫耳%至小於或等於25莫耳%之量的K2 O,諸如,自大於或等於7莫耳%至小於或等於24莫耳%、自大於或等於8莫耳%至小於或等於23莫耳%、自大於或等於9莫耳%至小於或等於22莫耳%、自大於或等於10莫耳%至小於或等於21莫耳%、自大於或等於11莫耳%至小於或等於20莫耳%、自大於或等於12莫耳%至小於或等於19莫耳%、自大於或等於13莫耳%至小於或等於18莫耳%、自大於或等於14莫耳%至小於或等於17莫耳%或自大於或等於15莫耳%至小於或等於16莫耳%,或自此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於10莫耳%至小於或等於25莫耳%之量的K2 O,諸如,自大於或等於10莫耳%至小於或等於20莫耳%、自大於或等於11莫耳%至小於或等於25莫耳%、自大於或等於11莫耳%至小於或等於20莫耳%、自大於或等於15莫耳%至小於或等於20莫耳%或自此等端點中之任何者形成之任何子範圍。In some embodiments, the alkali metal oxide can be K 2 O. The inclusion of K2O allows efficient exchange of hydrogen species into the glass substrate after exposure to an aqueous environment.在一些實施例中,玻璃基底基板可包括自大於或等於6莫耳%至小於或等於25莫耳%之量的K 2 O,諸如,自大於或等於7莫耳%至小於或等於24莫耳%、自大於或等於8莫耳%至小於或等於23莫耳%、自大於或等於9莫耳%至小於或等於22莫耳%、自大於或等於10莫耳%至小於或等於21莫耳%、自大於或等於11莫耳%至小於或等於20莫耳%、自大於或等於12莫耳%至小於或等於19莫耳%、自大於或等於13莫耳%至小於或等於18莫耳%、自大於或等於14莫耳%至小於或等於17莫耳%或自大於或等於15莫耳%至小於或等於16莫耳%,或自此等端點中之任何者形成之任何子範圍。 In some embodiments, the glass-based substrate may include K20 in an amount from 10 mol% or more to 25 mol% or less, such as from 10 mol% or more to 20 mol% or less, from 11 mol% or more to 25 mol% or less, from 11 mol% or more to 20 mol% or less, from 15 mol% or more to 20 mol% or less, or anywhere between these endpoints Any subrange formed by any.
玻璃基底基板可包括任何適當量之Rb2 O。在一些實施例中,玻璃基底基板可包括自大於或等於0莫耳%至小於或等於10莫耳%之量的Rb2 O,諸如,自大於或等於1莫耳%至小於或等於9莫耳%、自大於或等於2莫耳%至小於或等於8莫耳%、自大於或等於3莫耳%至小於或等於7莫耳%、自大於或等於4莫耳%至小於或等於6莫耳%、5莫耳%或自此等端點中之任何者形成之任何子範圍。The glass base substrate can include any suitable amount of Rb2O . In some embodiments, the glass base substrate may include Rb20 in an amount from greater than or equal to 0 mol % to less than or equal to 10 mol %, such as from greater than or equal to 1 mol % to less than or equal to 9 mol %, from greater than or equal to 2 mol % to less than or equal to 8 mol %, from greater than or equal to 3 mol % to less than or equal to 7 mol %, from greater than or equal to 4 mol % to less than or equal to 6 mol %, 5 mol %, or any of these endpoints any subrange of .
玻璃基底基板可包括任何適當量之Cs2 O。在一些實施例中,玻璃基底基板可包括自大於或等於0莫耳%至小於或等於10莫耳%之量的Cs2 O,諸如,自大於或等於1莫耳%至小於或等於9莫耳%、自大於或等於2莫耳%至小於或等於8莫耳%、自大於或等於3莫耳%至小於或等於7莫耳%、自大於或等於4莫耳%至小於或等於6莫耳%、5莫耳%或自此等端點中之任何者形成之任何子範圍。The glass base substrate can include any suitable amount of Cs2O . In some embodiments, the glass base substrate may comprise Cs20 in an amount from greater than or equal to 0 mol % to less than or equal to 10 mol %, such as from greater than or equal to 1 mol % to less than or equal to 9 mol %, from greater than or equal to 2 mol % to less than or equal to 8 mol %, from greater than or equal to 3 mol % to less than or equal to 7 mol %, from greater than or equal to 4 mol % to less than or equal to 6 mol %, 5 mol %, or any of these endpoints any subrange of .
在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;自大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;自大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及自大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In some embodiments, the glass-based substrate may have a composition comprising one of: from greater than or equal to 45 mol % to less than or equal to 75 mol % SiO 2 ; from greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; from greater than or equal to 6 mol % to less than or equal to 15 mol % P 2 O 5 ; and from greater than or equal to 6 mol % to less than or equal to 25 mol % K 2 O.
在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;自大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;自大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及自大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 45 mol % to less than or equal to 75 mol % SiO 2 ; from greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; from greater than or equal to 4 mol % to less than or equal to 15 mol % P 2 O 5 ; and from greater than or equal to 11 mol % to less than or equal to 25 mol % K 2 O.
在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;自大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;自大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及自大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 55 mol % to less than or equal to 69 mol % SiO 2 ; from greater than or equal to 5 mol % to less than or equal to 15 mol % Al 2 O 3 ; from greater than or equal to 6 mol % to less than or equal to 10 mol % P 2 O 5 ; and from greater than or equal to 10 mol % to less than or equal to 20 mol % K 2 O.
在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;自大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;自大於或等於5莫耳%至小於或等於10莫耳%之P2 O5 ;及自大於或等於11莫耳%至小於或等於20莫耳%之K2 O。In some embodiments, the glass-based substrate can have a composition comprising one of: from greater than or equal to 55 mol % to less than or equal to 69 mol % SiO 2 ; from greater than or equal to 5 mol % to less than or equal to 15 mol % Al 2 O 3 ; from greater than or equal to 5 mol % to less than or equal to 10 mol % P 2 O 5 ; and from greater than or equal to 11 mol % to less than or equal to 20 mol % K 2 O.
在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於58莫耳%至小於或等於63莫耳%之SiO2 ;自大於或等於7莫耳%至小於或等於14莫耳%之Al2 O3 ;自大於或等於7莫耳%至小於或等於10莫耳%之P2 O5 ;及自大於或等於15莫耳%至小於或等於20莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 58 mol % to less than or equal to 63 mol % SiO 2 ; from greater than or equal to 7 mol % to less than or equal to 14 mol % Al 2 O 3 ; from greater than or equal to 7 mol % to less than or equal to 10 mol % P 2 O 5 ; and from greater than or equal to 15 mol % to less than or equal to 20 mol % K 2 O.
在一些實施例中,玻璃基底基板可展現大於或等於5 kgf之一維氏開裂初始閾值,諸如,大於或等於6 kgf、大於或等於7 kgf、大於或等於8 kgf、大於或等於9 kgf、大於或等於10 kgf或更大。In some embodiments, the glass base substrate may exhibit a Vickers crack initiation threshold of 5 kgf or greater, such as 6 kgf or greater, 7 kgf or greater, 8 kgf or greater, 9 kgf or greater, 10 kgf or greater, or greater.
玻璃基底基板可具有任何適當幾何形狀。在一些實施例中,玻璃基底基板可具有小於或等於2 mm之一厚度,諸如,小於或等於1 mm、小於或等於900 μm、小於或等於800 μm、小於或等於700 μm、小於或等於600 μm、小於或等於500 μm、小於或等於400 μm、小於或等於300 μm或更小。在一些實施例中,玻璃基底基板可已為板或薄片形。在一些其他實施例中,玻璃基底基板可具有2.5D或3D形狀。如本文中利用,「2.5D形狀」指一薄片形物件,其具有至少部分不平坦之至少一個主表面,及實質上平坦之一第二主表面。如本文中利用,「3D形狀」指具有至少部分不平坦之第一及第二相對主表面之物件。The glass base substrate can have any suitable geometry. In some embodiments, the glass base substrate may have a thickness of 2 mm or less, such as 1 mm or less, 900 μm or less, 800 μm or less, 700 μm or less, 600 μm or less, 500 μm or less, 400 μm or less, 300 μm or less, or less. In some embodiments, the glass base substrate may have been in the form of a plate or sheet. In some other embodiments, the glass base substrate may have a 2.5D or 3D shape. As used herein, "2.5D shape" refers to a sheet-shaped object having at least one major surface that is at least partially uneven, and a second major surface that is substantially flat. As used herein, a "3D shape" refers to an object having first and second opposing major surfaces that are at least partially uneven.
玻璃基底物件可藉由在任何適當條件下暴露於水蒸氣自玻璃基底基板生產。可在任一適當元件(諸如,具有相對濕度控制之爐)中進行暴露。在一些實施例中,玻璃基底基板可暴露於具有大於或等於75%之一相對濕度的環境,諸如,大於或等於80%、大於或等於85%、大於或等於90%、大於或等於95%、大於或等於99%或更大。在一些實施例中,玻璃基底基板可暴露於具有100%相對濕度之環境。Glass-based articles can be produced from glass-based substrates by exposure to water vapor under any suitable conditions. Exposure can be performed in any suitable unit, such as an oven with relative humidity control. In some embodiments, the glass-based substrate may be exposed to an environment having a relative humidity of one of 75% or greater, such as 80% or greater, 85% or greater, 90% or greater, 95% or greater, 99% or greater, or greater. In some embodiments, the glass-based substrate can be exposed to an environment having 100% relative humidity.
在一些實施例中,玻璃基底基板可暴露於處於大於或等於70℃之一溫度下的環境,諸如,大於或等於75℃、大於或等於80℃、大於或等於85℃、大於或等於90℃、大於或等於95℃、大於或等於100℃、大於或等於105℃、大於或等於110℃、大於或等於115℃、大於或等於120℃、大於或等於125℃、大於或等於130℃、大於或等於135℃、大於或等於140℃、大於或等於145℃、大於或等於150℃、大於或等於155℃、大於或等於160℃、大於或等於160℃、大於或等於165℃、大於或等於170℃、大於或等於175℃、大於或等於180℃、大於或等於185℃、大於或等於190℃、大於或等於195℃、大於或等於200℃或更大。在一些實施例中,玻璃基底基板可暴露於處於自大於或等於70℃至小於或等於210℃之一溫度下的環境,諸如,自大於或等於75℃至小於或等於205℃、自大於或等於80℃至小於或等於200℃、自大於或等於85℃至小於或等於195℃、自大於或等於90℃至小於或等於190℃、自大於或等於90℃至小於或等於185℃、自大於或等於100℃至小於或等於180℃、自大於或等於105℃至小於或等於175℃、自大於或等於110℃至小於或等於170℃、自大於或等於115℃至小於或等於165℃、自大於或等於120℃至小於或等於160℃、自大於或等於125℃至小於或等於155℃、自大於或等於130℃至小於或等於150℃、自大於或等於135℃至小於或等於145℃、140℃或自此等端點形成之任何子範圍。In some embodiments, the glass base substrate may be exposed to an environment at a temperature of 70°C or greater, such as 75°C or greater, 80°C or greater, 85°C or greater, 90°C or greater, 95°C or greater, 100°C or greater, 105°C or greater, 110°C or greater, 115°C or greater, 120°C or greater, 125°C or greater, 130°C or greater, 130°C or greater, 1 35°C, 140°C or higher, 145°C or higher, 150°C or higher, 155°C or higher, 160°C or higher, 160°C or higher, 165°C or higher, 170°C or higher, 175°C or higher, 180°C or higher, 185°C or higher, 190°C or higher, 195°C or higher, 200°C or higher. In some embodiments, the glass base substrate may be exposed to an environment at a temperature from 70°C or greater to 210°C or less, such as from 75°C or greater to 205°C or less, from 80°C or greater to 200°C or less, from 85°C or greater to 195°C or less, from 90°C or greater to 190°C or less, from 90°C or greater to 185°C or less, from 10°C or greater. 0°C to less than or equal to 180°C, from greater than or equal to 105°C to less than or equal to 175°C, from greater than or equal to 110°C to less than or equal to 170°C, from greater than or equal to 115°C to less than or equal to 165°C, from greater than or equal to 120°C to less than or equal to 160°C, from greater than or equal to 125°C to less than or equal to 155°C, from greater than or equal to 130°C to less than or equal to 150°C, from greater than or equal to 135°C to less than Or equal to 145°C, 140°C, or any subrange formed from these endpoints.
在一些實施例中,玻璃基底基板可暴露於含水蒸氣之環境達足以產生所要的含氫物質擴散程度及所要的層深度之時間週期。在一些實施例中,玻璃基底基板可暴露於含水蒸氣之環境達大於或等於1天,諸如,大於或等於2天、大於或等於3天、大於或等於4天、大於或等於5天、大於或等於6天、大於或等於7天、大於或等於8天、大於或等於9天、大於或等於10天、大於或等於15天、大於或等於20天、大於或等於25天、大於或等於30天、大於或等於35天、大於或等於40天、大於或等於45天、大於或等於50天、大於或等於55天、大於或等於60天、大於或等於65天或更多。在一些實施例中,玻璃基底基板可暴露於含水蒸氣之環境達大於或等於1天至小於或等於70天之一時間週期,諸如,自大於或等於2天至小於或等於65天、自大於或等於3天至小於或等於60天、自大於或等於4天至小於或等於55天、自大於或等於5天至小於或等於45天、自大於或等於6天至小於或等於40天、自大於或等於7天至小於或等於35天、自大於或等於8天至小於或等於30天、自大於或等於9天至小於或等於25天、自大於或等於10天至小於或等於20天、15天或自此等端點中之任何者形成之任何子範圍。可修改該等暴露條件以減少產生至玻璃基底基板內之所要的含氫物質擴散量所必要之時間。舉例而言,可增大溫度及/或相對濕度以減少達成至玻璃基底基板內的所要程度之含氫物質擴散及層深度所需之時間。In some embodiments, the glass base substrate may be exposed to an environment containing water vapor for a period of time sufficient to produce a desired degree of diffusion of hydrogen-containing species and a desired depth of layer. In some embodiments, the glass base substrate can be exposed to an environment containing water vapor for 1 day or more, such as 2 days or more, 3 days or more, 4 days or more, 5 days or more, 6 days or more, 7 days or more, 8 days or more, 9 days or more, 10 days or more, 15 days or more, 20 days or more, 25 days or more, 30 days or more, 35 days or more, 40 days or more , greater than or equal to 45 days, greater than or equal to 50 days, greater than or equal to 55 days, greater than or equal to 60 days, greater than or equal to 65 days or more. In some embodiments, the glass base substrate can be exposed to an environment containing water vapor for a period of time ranging from 1 day or more to 70 days or less, such as from 2 days or more to 65 days or less, from 3 days or more to 60 days or less, from 4 days or more to 55 days or less, from 5 days or more to 45 days or less, from 6 days or more to 40 days or less, from 7 days or more to 35 days or less, from 7 days or more to 35 days or less, or equal to 8 days to less than or equal to 30 days, from greater than or equal to 9 days to less than or equal to 25 days, from greater than or equal to 10 days to less than or equal to 20 days, 15 days, or any subrange formed from any of these endpoints. The exposure conditions can be modified to reduce the time necessary to produce a desired amount of hydrogen-containing species diffusion into the glass base substrate. For example, temperature and/or relative humidity can be increased to reduce the time required to achieve a desired degree of hydrogen-containing species diffusion and layer depth into the glass base substrate.
本文中揭示之玻璃基底物件可併入至另一物件內,諸如,具有一顯示器之物件(或顯示物件)(例如,消費者電子元件,包括行動電話、平板電腦、電腦、導航系統、可佩戴元件(例如,手錶)及類似者)、建築物件、交通物件(例如,汽車、火車、飛機、海輪等)、電器物件,或需要某一透明度、耐刮擦性、耐磨或其組合之任一物件。併有本文中揭示之玻璃基底物件中之任何者之一例示性物件展示於第2A圖及第2B圖中。具體言之,第2A圖及第2B圖展示一消費者電子元件200,其包括:具有前部204、後部206及側表面208之一外殼202;電組件(未展示),其至少部分在外殼內部或全部在外殼內且包括至少一控制器、一記憶體及在外殼之前表面處或鄰近外殼之前表面的一顯示器210;及在外殼之前表面處或上之一蓋基板212,使得其在顯示器上。在一些實施例中,蓋基板212及外殼202中之一者之至少一部分可包括本文中揭示的玻璃基底物件中之任何者。 例示性實施例The glass-based objects disclosed herein can be incorporated into another object, such as an object (or display object) having a display (e.g., consumer electronics, including mobile phones, tablets, computers, navigation systems, wearable elements (e.g., watches), and the like), architectural objects, transportation objects (e.g., automobiles, trains, airplanes, marine vessels, etc.), electrical objects, or any object requiring certain transparency, scratch resistance, abrasion resistance, or a combination thereof. An exemplary object of any of the glass substrate objects disclosed herein is also shown in Figures 2A and 2B. Specifically, FIGS. 2A and 2B show a consumer electronics component 200 comprising: a housing 202 having a front 204, a rear 206, and side surfaces 208; electrical components (not shown) at least partially inside or entirely within the housing and including at least a controller, a memory, and a display 210 at or adjacent to the front surface of the housing; and a cover substrate 212 at or on the front surface of the housing such that it is over the display. In some embodiments, at least a portion of one of the cover substrate 212 and the housing 202 can include any of the glass substrate articles disclosed herein. Exemplary embodiment
特別適合於本文中的玻璃基底物件之形成之玻璃組合物形成至玻璃基底基板內。下表II中描述實例1至6之組成。使用ASTM C693-93(2013)之浮力方法判定密度。在溫度範圍25℃至300℃上之線性熱膨脹係數(CTE)係按10-7
/℃來表達,且根據ASTM E228-11使用推桿膨脹計來判定。使用ASTM C598-93(2013)之射束彎曲黏度方法來判定應變點及退火點。使用ASTM C1351M-96(2012)之平行板黏度方法判定軟化點。根據題為「Standard Practice for Measuring Viscosity of Glass Above the Softening Point」之ASTM C965-96(2012),針對生成之組合物,量測玻璃具有200 P、35,000 P及200,000 P之一黏度的溫度。
將包括實例1之組成且具有1 mm之一厚度的玻璃基底基板暴露於85%相對濕度之一環境達65天以形成包括本文中描述之類型的一含氫層之玻璃基底物件。A glass base substrate comprising the composition of Example 1 and having a thickness of 1 mm was exposed to an environment of 85% relative humidity for 65 days to form a glass base article comprising a hydrogen-containing layer of the type described herein.
在暴露前及後,藉由SIMS量測含氫層之深度。SIMS氫濃度量測之結果展示於第3圖中,其中原樣玻璃基底基板氫濃度曲線301具有約5 μm之一層深度,且玻璃基底物件氫濃度曲線302具有約30 μm之一層深度。量測暴露後玻璃基底物件至約25 μm之深度,且外推曲線303以判定該層深度。基於量測之值,使用通式DOL = sqrt(D•time)來計算氫擴散性(D)。The depth of the hydrogen-containing layer was measured by SIMS before and after exposure. The results of the SIMS hydrogen concentration measurements are shown in Figure 3, where the as-received glass substrate hydrogen concentration curve 301 has a layer depth of about 5 μm and the glass substrate object hydrogen concentration curve 302 has a layer depth of about 30 μm. The exposed glass substrate article was measured to a depth of about 25 μm, and curve 303 was extrapolated to determine the layer depth. Based on the measured values, the hydrogen diffusivity (D) is calculated using the general formula DOL = sqrt(D·time).
在暴露於含水蒸氣之環境前及後,量測維氏凹痕開裂閾值。在分別處於5 kgf及10 kgf下之壓痕後,暴露前玻璃基底基板之維氏凹痕之結果展示於第4圖及第5圖中。如在第4圖及第5圖中展示,玻璃基底基板具有高於5 kgf但低於10 kgf之一維氏開裂初始閾值。在分別處於5 kgf及、10 kgf及20 kgf下之壓痕後,暴露之玻璃基底物件之維氏凹痕之結果展示於第6圖、第7圖及第8圖中。如由第6圖、第7圖及第8圖演示,玻璃基底物件之維氏凹痕開裂閾值大於20 kgf。The Vickers dent cracking threshold was measured before and after exposure to water vapor. The results of Vickers indentation of the exposed front glass base substrates after indentation at 5 kgf and 10 kgf respectively are shown in Fig. 4 and Fig. 5 . As shown in Figures 4 and 5, the glass base substrate has a Vickers crack initiation threshold above 5 kgf but below 10 kgf. The results of Vickers indentation of exposed glass substrate objects after indentation at 5 kgf, 10 kgf and 20 kgf are shown in Figs. 6, 7 and 8, respectively. As demonstrated by Figures 6, 7 and 8, the Vickers dent cracking threshold for glass substrate objects is greater than 20 kgf.
包括比較實例1至3之組成且具有1 mm之厚度的玻璃基底基板亦經製備且暴露於85%相對濕度之環境達30天。下表III中報告比較實例1至3之組成。在暴露於含水蒸氣之環境前及後,量測維氏凹痕開裂閾值,且在暴露後藉由SIMS量測含氫層之深度。基於量測之值計算氫擴散性。
如表III中展示,實例1之玻璃組合物展現為比較實例3之玻璃組合物兩個數量級高的一氫擴散性,比較實例3亦包括鉀,但不包括磷。此等結果指示玻璃組合物中的磷之存在顯示增大氫擴散性。類似地,比較實例3之玻璃組合物展現為分別包括鋰及鈉之比較實例1及2之兩個數量級高的一氫擴散性。含鉀玻璃組合物與含鋰及鈉玻璃組合物之間的氫擴散性之差異指示具有較大離子半徑之鹼離子允許較快之氫擴散性。As shown in Table III, the glass composition of Example 1 exhibited a monohydrogen diffusivity two orders of magnitude higher than the glass composition of Comparative Example 3, which also included potassium but did not include phosphorus. These results indicate that the presence of phosphorus in the glass composition exhibits increased hydrogen diffusivity. Similarly, the glass composition of Comparative Example 3 exhibited a hydrogen diffusivity two orders of magnitude higher than that of Comparative Examples 1 and 2 including lithium and sodium, respectively. The difference in hydrogen diffusivity between potassium-containing glass compositions and lithium- and sodium-containing glass compositions indicates that alkali ions with larger ionic radii allow for faster hydrogen diffusivity.
包括實例6之玻璃組合物的玻璃基底基板經生產,具有0.5 mm及1.0 mm之厚度。將玻璃基底基板暴露於200℃之溫度下之100%相對濕度環境達7天之週期以生產本文中描述的類型之玻璃基底物件。該等玻璃基底物件展現自表面延伸至一壓縮深度之一壓縮應力區域。針對0.5 mm玻璃基底物件量測之最大壓縮應力為124 Mpa,且針對1.0 mm玻璃基底物件量測之最大壓縮應力為137 Mpa。針對0.5 mm玻璃基底物件量測之最大中央拉伸為32 Mpa,且針對1.0 mm玻璃基底物件量測之最大壓縮應力為15 Mpa。0.5 mm玻璃基底物件之壓縮深度為101 μm,且1.0 mm玻璃基底物件之壓縮深度為99 μm。Glass base substrates comprising the glass composition of Example 6 were produced with thicknesses of 0.5 mm and 1.0 mm. The glass-based substrates were exposed to a 100% relative humidity environment at a temperature of 200°C for a period of 7 days to produce glass-based articles of the type described herein. The glass-based objects exhibit a region of compressive stress extending from the surface to a compression depth. The maximum compressive stress measured for a 0.5 mm glass substrate object was 124 Mpa, and the maximum compressive stress measured for a 1.0 mm glass substrate object was 137 Mpa. The maximum central tensile measured for a 0.5 mm glass substrate object was 32 MPa, and the maximum compressive stress measured for a 1.0 mm glass substrate object was 15 MPa. The compression depth was 101 μm for the 0.5 mm glass substrate object and 99 μm for the 1.0 mm glass substrate object.
在暴露於200℃下之100%相對濕度環境達7天後,亦自由包括實例6之玻璃組合物之玻璃基底基板形成的0.5 mm及1.0 mm厚玻璃基底物件之中心切割樣本。接著將樣本拋光至0.5 mm之一寬度,且經受傅立葉變換紅外光譜學(Fourier-transform infrared spectroscopy; FTIR)分析。藉由以下條件執行FTIR分析:CaF/InSb,64次掃描,16 cm-1 解析度,10 μm光圈及10 μm階。掃描起源於樣本之表面,且繼續至厚度之大致中點。相對於「乾」矽石產生光譜,且使用3900 cm-1 max及3550 cm-1 min參數計算羥基(βOH)濃度。歸因於玻璃基底物件之多組分本質,不可能區分受束縛羥基與分子羥基,因此曲線報告總羥基含量之濃度。0.5 mm厚及1.0 mm厚樣本的量測之羥基濃度分別展示於第9圖及第10圖中。如第9圖及第10圖中所展示,量測之羥基含量變得實質上恆定且等效於在物件之中心處的羥基含量(指示前驅體玻璃基底物件之背景羥基含量)之樣本內的濃度大致為200 μm,如藉由FTIR量測。在第9圖及第10圖中的內埋羥基濃度峰值之出現為量測方法之假像。Heart-cut samples of 0.5 mm and 1.0 mm thick glass-based objects were also formed from glass-based substrates comprising the glass composition of Example 6 after exposure to a 100% relative humidity environment at 200°C for 7 days. The samples were then polished to a width of 0.5 mm and subjected to Fourier-transform infrared spectroscopy (FTIR) analysis. FTIR analysis was performed with the following conditions: CaF/InSb, 64 scans, 16 cm −1 resolution, 10 μm aperture and 10 μm steps. The scan originates at the surface of the sample and continues to approximately the midpoint of the thickness. Spectra were generated relative to "dry" silica and hydroxyl (βOH) concentrations were calculated using the 3900 cm −1 max and 3550 cm −1 min parameters. Due to the multicomponent nature of the glass-based objects, it is not possible to distinguish between bound and molecular hydroxyl groups, so the curves report the concentration of the total hydroxyl content. The measured hydroxyl concentrations of 0.5 mm thick and 1.0 mm thick samples are shown in Figures 9 and 10, respectively. As shown in Figures 9 and 10, the measured hydroxyl content becomes substantially constant and equivalent to a concentration within the sample of approximately 200 μm of the hydroxyl content at the center of the object (indicative of the background hydroxyl content of the precursor glass substrate object), as measured by FTIR. The appearance of the buried hydroxyl concentration peaks in Figures 9 and 10 is an artifact of the measurement method.
製備具有實例1之組成的方形樣本,具有1 mm及50 mm邊之厚度。接著在200℃下之100%相對濕度環境中處理此等樣本中之五個,達121小時。接著藉由FSM量測經處理樣本之所得壓縮應力(compressive stress; CS)及壓縮深度(depth of compression; DOC),從而得出167 MPa之CS及73 μm之DOC。使5個經蒸汽處理之樣本及未暴露於蒸汽處理之3個對照樣本經受研磨環對環(abraded ring-on-ring; AROR)測試。在表IV中報告每一測試之樣本的強度及峰值負載。如在表IV中所展示,與未處理之對照樣本比較,經蒸汽處理之樣本展現大大增加之峰值負載及強度。
AROR測試為用於測試平玻璃試樣之表面強度量測,且題為「Standard Test Method for Monotonic Equibiaxial Flexural Strength of Advanced Ceramics at Ambient Temperature」之ASTM C1499-09(2013)充當用於本文中利用之AROR測試方法之基礎。ASTM C1499-09之內容被以引用之方式全部併入本文中。使用在題為「Standard Test Methods for Strength of Glass by Flexure (Determination of Modulus of Rupture)」之ASTM C158-02(2012)的題為「abrasion Procedures」之附錄2中描述之方法及裝置,用傳遞至玻璃樣本之90個粗砂碳化矽(SiC)粒子在環對環測試前研磨玻璃試樣。ASTM C158-02之內容及附錄2之內容特別被以引用之方式全部併入本文中。The AROR test is a surface strength measurement for testing flat glass specimens, and ASTM C1499-09 (2013) entitled "Standard Test Method for Monotonic Equibiaxial Flexural Strength of Advanced Ceramics at Ambient Temperature" serves as the basis for the AROR test method utilized herein. The contents of ASTM C1499-09 are incorporated herein by reference in their entirety. Using the method and apparatus described in Appendix 2 entitled "abrasion Procedures" of ASTM C158-02 (2012) entitled "Standard Test Methods for Strength of Glass by Flexure (Determination of Modulus of Rupture)", the glass samples were ground with 90 grit silicon carbide (SiC) particles delivered to the glass samples prior to ring-to-ring testing. The contents of ASTM C158-02 and the contents of Appendix 2 are specifically incorporated herein by reference in their entirety.
在環對環測試前,如在ASTM C158-02,附錄2中所描述來研磨玻璃基底物件樣本之表面,以使用在ASTM C158-02之第A2.1圖中展示之裝置來正規化及/或控制樣本之表面缺陷狀況。在5 psi之空氣壓力下,將研磨材料噴砂至玻璃基底物件之表面上。在建立了空氣流後,將1 cm3 之研磨材料傾倒至爐內且將樣本噴砂。Prior to ring-to-ring testing, the surface of the glass-based article sample was ground as described in ASTM C158-02, Appendix 2, to normalize and/or control the surface defect profile of the sample using the apparatus shown in Figure A2.1 of ASTM C158-02. The abrasive material was blasted onto the surface of the glass-based article at an air pressure of 5 psi. After air flow was established, 1 cm 3 of abrasive material was poured into the furnace and the samples were grit blasted.
對於AROR測試,將如第11圖中展示的具有至少一個研磨表面之玻璃基底物件置放於不同大小之兩個同心環之間以判定等雙軸撓曲強度(亦即,當經受兩個同心環之間的撓曲時材料能夠支撐之最大應力)。在AROR組態400中,研磨玻璃基底物件410由具有一直徑D2之一支撐環420支撐。藉由具有一直徑D1之一裝載環430,力F由測力計(未展示)施加至玻璃基底物件之表面。For the AROR test, a glass substrate article having at least one abrasive surface as shown in Figure 11 was placed between two concentric rings of different sizes to determine the equibiaxial flexural strength (i.e., the maximum stress the material can support when subjected to flexure between the two concentric rings). In AROR configuration 400, ground glass substrate article 410 is supported by a support ring 420 having a diameter D2. A force F is applied to the surface of the glass substrate article by a load cell (not shown) via a loading ring 430 having a diameter D1.
裝載環與支撐環之直徑比D1/D2可在自0.2至0.5之一範圍中。在一些實施例中,D1/D2為0.5。裝載環430及支撐環420應同心對準至支撐環直徑D2之0.5%內。在選定範圍內之任一負載下,用於測試之測力計應準確至±1%內。在23±2℃之一溫度及40±10%之一相對濕度下進行測試。The diameter ratio D1/D2 of the loading ring to the support ring may be in a range from 0.2 to 0.5. In some embodiments, D1/D2 is 0.5. Loading ring 430 and support ring 420 should be concentrically aligned to within 0.5% of support ring diameter D2. The dynamometer used for testing shall be accurate to within ±1% at any load within the selected range. Test at a temperature of 23±2°C and a relative humidity of 40±10%.
對於夾具設計,裝載環430之突出表面之半徑r在h/2 ≤ r ≤ 3h/2之一範圍中,其中h為玻璃基底物件410之厚度。裝載環430及支撐環420由具有硬度HRc > 40之加硬鋼製成。AROR夾具可市售。For the jig design, the radius r of the protruding surface of the loading ring 430 is in the range of h/2≦r≦3h/2, where h is the thickness of the glass substrate article 410 . The loading ring 430 and the support ring 420 are made of hardened steel with a hardness HRc>40. AROR clamps are commercially available.
針對AROR測試的意欲之故障機制為,觀測源自裝載環430內之表面430a的玻璃基底物件410之斷裂。資料分析時忽略發生於此區域之外(亦即,在裝載環430與支撐環420之間)的故障。然而,歸因於玻璃基底物件410之薄度及高強度,有時觀測到超過試樣厚度h之大偏轉。因此,觀測到源自裝載環430下的高百分比之故障並非不常見。在不知曉在環內部及下之應力發展(經由應變儀分析收集)及每一試樣中的故障之源之情況下,不能準確地計算應力。作為量測之回應,AROR測試因此聚焦於在故障處之峰值負載。The intended failure mechanism for the AROR test was to observe fracture of the glass substrate article 410 originating from the surface 430a within the load ring 430 . Faults occurring outside this region (ie, between the loading ring 430 and the support ring 420 ) were ignored in the data analysis. However, due to the thinness and high strength of the glass substrate object 410, large deflections exceeding the sample thickness h were sometimes observed. Therefore, it is not uncommon to observe a high percentage of failures originating from under the load ring 430 . Without knowledge of the stress development inside and below the ring (collected via strain gauge analysis) and the source of the failure in each specimen, the stresses could not be accurately calculated. In response to the measurement, the AROR test therefore focuses on the peak load at the fault.
雖然已為了說明之目的而闡述典型實施例,但前述描述不應被視為對本揭示內容或隨附申請專利範圍之範圍的一限制。因此,在不脫離本揭示內容或隨附申請專利範圍之精神及範疇之情況下,熟習此項技術者可想到各種修改、改編及替代。While typical embodiments have been set forth for purposes of illustration, the foregoing description should not be considered as a limitation on the scope of the disclosure or of the appended claims. Accordingly, various modifications, adaptations and substitutions may occur to those skilled in the art without departing from the spirit and scope of this disclosure or the appended claims.
100‧‧‧玻璃基底物件 110‧‧‧第一表面 112‧‧‧第二表面 120‧‧‧第一含氫層 122‧‧‧第二含氫層 130‧‧‧無添加氫物質區域 200‧‧‧消費者電子元件 202‧‧‧外殼 204‧‧‧前部 206‧‧‧後部 208‧‧‧側表面 210‧‧‧顯示器 212‧‧‧蓋基板 301‧‧‧原樣玻璃基底基板氫濃度曲線 302‧‧‧玻璃基底物件氫濃度曲線 303‧‧‧外推之曲線 400‧‧‧AROR組態 410‧‧‧研磨玻璃基底物件 420‧‧‧支撐環 430‧‧‧裝載環 430a‧‧‧表面 d1‧‧‧深度 d2‧‧‧深度 t‧‧‧厚度 D1‧‧‧裝載環直徑 D2‧‧‧支撐環直徑 F‧‧‧力100‧‧‧glass substrate objects 110‧‧‧first surface 112‧‧‧Second surface 120‧‧‧The first hydrogen-containing layer 122‧‧‧The second hydrogen-containing layer 130‧‧‧No added hydrogen substance area 200‧‧‧Consumer electronic components 202‧‧‧Shell 204‧‧‧Front 206‧‧‧rear 208‧‧‧side surface 210‧‧‧display 212‧‧‧Cover substrate 301‧‧‧Hydrogen concentration curve of original glass base substrate 302‧‧‧Hydrogen concentration curve of glass substrate object 303‧‧‧Extrapolated curve 400‧‧‧AROR configuration 410‧‧‧Grinding glass substrate objects 420‧‧‧Support ring 430‧‧‧Loading ring 430a‧‧‧surface d1‧‧‧depth d2‧‧‧depth t‧‧‧thickness D1‧‧‧Diameter of loading ring D2‧‧‧Support ring diameter F‧‧‧force
第1圖為根據一實施例的一玻璃基底物件之橫截面之表示。Figure 1 is a representation of a cross-section of a glass substrate article according to one embodiment.
第2A圖為併有本文中揭示之玻璃基底物件中之任何者的一例示性電子元件之平面圖。FIG. 2A is a plan view of an exemplary electronic component incorporating any of the glass substrate articles disclosed herein.
第2B圖為第2A圖之例示性電子元件之透視圖。Figure 2B is a perspective view of the exemplary electronic component of Figure 2A.
第3圖為對於自具有實例1之組成之一玻璃基底基板形成的一玻璃基底物件藉由SIMS產生的氫濃度作為在表面下方之深度之一函數之量測。FIG. 3 is a measurement of hydrogen concentration by SIMS as a function of depth below the surface for a glass-based article formed from a glass-based substrate having the composition of Example 1. FIG.
第4圖為在暴露於含水環境前在具有實例1之組成之一玻璃基底基板中在5 kgf下之一維氏凹痕之照片。Figure 4 is a photograph of a Vickers indent at 5 kgf in a glass base substrate having the composition of Example 1 before exposure to an aqueous environment.
第5圖為在暴露於含水環境前在具有實例1之組成之一玻璃基底基板中在10 kgf下之一維氏凹痕之照片。Figure 5 is a photograph of a Vickers indent at 10 kgf in a glass base substrate having the composition of Example 1 before exposure to an aqueous environment.
第6圖為藉由使具有實例1之組成之一玻璃基底基板暴露於含水環境形成的一玻璃基底物件中在5 kgf下之一維氏凹痕之照片。Figure 6 is a photograph of a Vickers indent at 5 kgf in a glass base article formed by exposing a glass base substrate having the composition of Example 1 to an aqueous environment.
第7圖為藉由使具有實例1之組成之一玻璃基底基板暴露於含水環境形成的一玻璃基底物件中在10 kgf下之一維氏凹痕之照片。Figure 7 is a photograph of a Vickers indent at 10 kgf in a glass base article formed by exposing a glass base substrate having the composition of Example 1 to an aqueous environment.
第8圖為藉由使具有實例1之組成之一玻璃基底基板暴露於含水環境形成的一玻璃基底物件中在20 kgf下之一維氏凹痕之照片。Figure 8 is a photograph of a Vickers indent at 20 kgf in a glass base article formed by exposing a glass base substrate having the composition of Example 1 to an aqueous environment.
第9圖為根據一實施例的在暴露於含水環境後0.5 mm厚玻璃物件之羥基(BOH)濃度作為距表面之深度之一函數之曲線圖。Figure 9 is a graph of hydroxyl group (BOH) concentration as a function of depth from the surface for a 0.5 mm thick glass object after exposure to an aqueous environment, according to one embodiment.
第10圖為根據一實施例的在暴露於含水環境後1.0 mm厚玻璃物件之羥基(BOH)濃度作為距表面之深度之一函數之曲線圖。Figure 10 is a graph of hydroxyl group (BOH) concentration as a function of depth from the surface for a 1.0 mm thick glass object after exposure to an aqueous environment, according to one embodiment.
第11圖為環對環測試裝置之側視圖。Figure 11 is a side view of the ring-to-ring test setup.
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