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TWI804000B - Co-axial via structure - Google Patents

Co-axial via structure Download PDF

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Publication number
TWI804000B
TWI804000B TW110137648A TW110137648A TWI804000B TW I804000 B TWI804000 B TW I804000B TW 110137648 A TW110137648 A TW 110137648A TW 110137648 A TW110137648 A TW 110137648A TW I804000 B TWI804000 B TW I804000B
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Taiwan
Prior art keywords
hole
insulating layer
conductive structure
line
coaxial
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TW110137648A
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Chinese (zh)
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TW202230892A (en
Inventor
王佰偉
粘恒銘
陳慶盛
林宜平
程石良
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欣興電子股份有限公司
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Priority to US17/455,918 priority Critical patent/US11792918B2/en
Publication of TW202230892A publication Critical patent/TW202230892A/en
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Publication of TWI804000B publication Critical patent/TWI804000B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/115Via connections; Lands around holes or via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H10W20/023
    • H10W42/20
    • H10W70/611
    • H10W70/635
    • H10W70/685

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

A co-axial structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate includes a first surface. The first conductive structure includes a first circuit disposed on the first surface and a first via penetrating the substrate. The second conductive structure includes a second circuit disposed on the first surface and a second via penetrating the substrate. The first via and the second via extend along a first direction. The first circuit and the second circuit extend along a second direction, and the second direction is perpendicular to the first direction. The insulating layer is located between the first via and the second via. The insulating layer includes fillers. The first conductive structure and the second conductive structure are electrically insulated. The first circuit and the second circuit are co-planar.

Description

共軸通孔結構 coaxial via structure

本揭露是有關於一種共軸通孔結構,尤其是一種具有共平面的訊號線與接地線的共軸通孔結構。 The present disclosure relates to a coaxial via structure, in particular to a coaxial via structure with coplanar signal lines and ground lines.

現今的共軸通孔結構大多需透過壓合增層製程設置介電層在不同層的接地線與訊號線之間,而需耗費較多成本。由於通孔中的內層線路與外層線路的高度不同,因此會產生阻抗不匹配的問題。設置在接地線與訊號線之間的介電層也會產生屏蔽缺口,導致電磁屏蔽效果不佳。此外,由於絕緣層的填孔材料大多具有高介電常數,因此阻抗失配產生的功率損耗問題嚴重。 Most of the current coaxial via structures require a build-up process to place a dielectric layer between the ground line and the signal line of different layers, which requires a lot of cost. Since the inner and outer traces in the via are not at the same height, an impedance mismatch problem arises. The dielectric layer disposed between the ground wire and the signal wire will also produce shielding gaps, resulting in poor electromagnetic shielding effect. In addition, because most of the hole-filling materials of the insulating layer have a high dielectric constant, the power loss caused by impedance mismatch is a serious problem.

有鑑於此,如何提供一種可提升阻抗匹配與電磁屏蔽效果的共軸通孔結構,仍是目前業界亟需研究的目標之一。 In view of this, how to provide a coaxial via structure that can improve impedance matching and electromagnetic shielding effects is still one of the goals that the industry needs to study urgently.

本揭露之一技術態樣為一種共軸通孔結構。 One technical aspect of the present disclosure is a coaxial through-hole structure.

在本揭露一實施例中,共軸通孔結構包含基板、第一導電結構、第二導電結構以及絕緣層。基板具有第 一表面。第一導電結構包含位在第一表面上的第一線路與貫穿基板的第一通孔。第二導電結構包含位在基板的第一表面上的第二線路與貫穿基板的第二通孔。第一通孔與第二通孔延伸於第一方向,第一線路與第二線路延伸於第二方向,且第二方向垂直於第一方向。絕緣層位在第一通孔與第二通孔之間,絕緣層具有填充料,其中第一導電結構與第二導電結構電性絕緣,且第一線路與第二線路共平面。 In an embodiment of the present disclosure, the coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate has the a surface. The first conductive structure includes a first circuit on the first surface and a first through hole penetrating through the substrate. The second conductive structure includes a second line on the first surface of the substrate and a second through hole penetrating through the substrate. The first through hole and the second through hole extend in a first direction, the first circuit and the second circuit extend in a second direction, and the second direction is perpendicular to the first direction. The insulating layer is located between the first through hole and the second through hole, and the insulating layer has filling material, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar.

在本揭露一實施例中,填充料包含空氣。 In an embodiment of the present disclosure, the filling material includes air.

在本揭露一實施例中,第一導電結構的第一通孔圍繞第二導電結構的第二通孔與絕緣層。 In an embodiment of the present disclosure, the first through hole of the first conductive structure surrounds the second through hole of the second conductive structure and the insulating layer.

在本揭露一實施例中,絕緣層、第一通孔與第二通孔共軸。 In an embodiment of the disclosure, the insulating layer, the first through hole and the second through hole are coaxial.

在本揭露一實施例中,絕緣層具有突出部,位在絕緣層靠近第一表面的末端。 In an embodiment of the present disclosure, the insulating layer has a protruding portion located at an end of the insulating layer close to the first surface.

本揭露之一技術態樣為一種共軸通孔結構。 One technical aspect of the present disclosure is a coaxial through-hole structure.

在本揭露一實施例中,共軸通孔結構包含基板、第一導電結構、第二導電結構、絕緣層以及空氣孔。基板具有第一表面。第一導電結構包含位在第一表面上的第一線路與貫穿基板的第一通孔。第二導電結構包含位在基板的第一表面上的第二線路與貫穿基板的第二通孔。第一通孔與第二通孔延伸於第一方向,第一線路與第二線路延伸於第二方向,且第二方向垂直於第一方向。絕緣層位在第一通孔與第二通孔之間,絕緣層具有填充料, 其中第一導電結構與第二導電結構電性絕緣,且第一線路與第二線路共平面。空氣孔位在第一通孔與第二通孔之間,且空氣孔沿著第一方向貫穿絕緣層。 In an embodiment of the present disclosure, the coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, an insulating layer, and an air hole. The substrate has a first surface. The first conductive structure includes a first circuit on the first surface and a first through hole penetrating through the substrate. The second conductive structure includes a second line on the first surface of the substrate and a second through hole penetrating through the substrate. The first through hole and the second through hole extend in a first direction, the first circuit and the second circuit extend in a second direction, and the second direction is perpendicular to the first direction. The insulating layer is located between the first through hole and the second through hole, and the insulating layer has filling material, Wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar. The air hole is located between the first through hole and the second through hole, and the air hole penetrates the insulating layer along the first direction.

在本揭露一實施例中,空氣孔在第一方向上的俯視形狀為弧形,且空氣孔圍繞第二通孔。 In an embodiment of the present disclosure, the top view shape of the air hole in the first direction is an arc, and the air hole surrounds the second through hole.

在本揭露一實施例中,第一導電結構的第一通孔圍繞第二導電結構的第二通孔與絕緣層。 In an embodiment of the present disclosure, the first through hole of the first conductive structure surrounds the second through hole of the second conductive structure and the insulating layer.

在本揭露一實施例中,絕緣層、第一通孔與第二通孔共軸。 In an embodiment of the disclosure, the insulating layer, the first through hole and the second through hole are coaxial.

在本揭露一實施例中,絕緣層具有突出部,位在絕緣層靠近第一表面的末端。 In an embodiment of the present disclosure, the insulating layer has a protruding portion located at an end of the insulating layer close to the first surface.

在上述實施例中,由於本揭露的共軸通孔結構具有共平面的第一線路與第二線路,且第一導電結構與第二導電結構可透過絕緣層電性絕緣,因此本揭露的共軸通孔結構可具有較佳的電磁雜訊屏蔽以及阻抗匹配效果,以提升高頻訊號完整性。本揭露的共軸通孔結構可減少介電層的數量、縮減共軸通孔結構的厚度、並降低成本。此外,共軸通孔結構的絕緣層整體的介電常數可藉由填充料或空氣孔而降低。藉此,可降低通孔阻抗失配產生的功率損耗問題。 In the above-mentioned embodiments, since the coaxial via structure of the present disclosure has the coplanar first line and the second line, and the first conductive structure and the second conductive structure can be electrically insulated through the insulating layer, the coaxial via structure of the present disclosure The shaft through-hole structure can have better electromagnetic noise shielding and impedance matching effects to improve high-frequency signal integrity. The disclosed coaxial via structure can reduce the number of dielectric layers, reduce the thickness of the coaxial via structure, and lower the cost. In addition, the overall dielectric constant of the insulating layer of the coaxial via structure can be reduced by fillers or air holes. In this way, the problem of power loss caused by the impedance mismatch of the vias can be reduced.

100,100a,100b:共軸通孔結構 100, 100a, 100b: coaxial through-hole structure

110:基板 110: Substrate

112:第一表面 112: first surface

114:第二表面 114: second surface

116:內部線路 116: Internal wiring

120:第一導電結構 120: the first conductive structure

120M:第一導電材料 120M: the first conductive material

122:第一線路 122: The first line

124:第一通孔 124: the first through hole

126:第三線路 126: The third line

130:第二導電結構 130: second conductive structure

130M:第二導電材料 130M: second conductive material

132:第二線路 132: second line

134:第二通孔 134: Second through hole

136:第四線路 136: The fourth line

140,140a,140b:絕緣層 140, 140a, 140b: insulating layer

140M:絕緣層材料 140M: insulating layer material

142:第一突出部 142: The first protrusion

144:第二突出部 144: second protrusion

146:填充料 146: filler

148a,148b:空氣孔 148a, 148b: air hole

150:介電層 150: dielectric layer

160:光罩 160: mask

170:絕緣保護層 170: insulating protective layer

D1:第一方向 D1: the first direction

D2:第二方向 D2: Second direction

OP1:第一貫孔 OP1: the first through hole

OP2:第二貫孔 OP2: Second through hole

TR1:第一凹槽 TR1: first groove

TR2:第二凹槽 TR2: second groove

A:軸心 A: axis

3B-3B,4B-4B,5B-5B,6B-6B,7B-7B,8B-8B,9B-9B,10B-10B,11B-11B,12B-12B:線段 3B-3B, 4B-4B, 5B-5B, 6B-6B, 7B-7B, 8B-8B, 9B-9B, 10B-10B, 11B-11B, 12B-12B: line segment

W1,W2:寬度 W1, W2: width

I:間距 I: Spacing

第1圖為根據本揭露一實施例之共軸通孔結構之剖面圖。 FIG. 1 is a cross-sectional view of a coaxial via structure according to an embodiment of the present disclosure.

第2圖為第1圖中的第一通孔、第二線路、第二通孔以及絕緣層的立體圖。 Fig. 2 is a perspective view of the first through hole, the second circuit, the second through hole and the insulating layer in Fig. 1 .

第3A圖至第11A圖為根據本揭露一實施例之共軸通孔結構的製造方法的中間步驟的俯視圖。 FIG. 3A to FIG. 11A are top views of intermediate steps of a method for manufacturing a coaxial via structure according to an embodiment of the present disclosure.

第3B圖至第11B圖分別為沿著第3A圖至第11A圖中線段3B-3B至線段11B-11B的剖面圖。 Figures 3B to 11B are cross-sectional views along line 3B-3B to line 11B-11B in Figures 3A to 11A, respectively.

第12A圖為根據本揭露另一實施例之共軸通孔結構的上視圖。 FIG. 12A is a top view of a coaxial via structure according to another embodiment of the present disclosure.

第12B圖為沿著第12A圖中線段12B-12B的剖面圖。 Figure 12B is a cross-sectional view along line 12B-12B in Figure 12A.

第13圖為根據本揭露另一實施例之共軸通孔結構的上視圖。 FIG. 13 is a top view of a coaxial via structure according to another embodiment of the disclosure.

以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。且為了清楚起見,圖式中之層和區域的厚度可能被誇大,並且在圖式的描述中相同的元件符號表示相同的元件。 Several embodiments of the present invention will be disclosed in the following figures. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some well-known structures and components will be shown in a simple and schematic manner in the drawings. Also, the thicknesses of layers and regions in the drawings may be exaggerated for clarity, and the same reference numerals denote the same elements in the description of the drawings.

第1圖為根據本揭露一實施例之共軸通孔結構100之剖面圖。共軸通孔結構100包含基板110、第 一導電結構120、第二導電結構130以絕緣層140。 FIG. 1 is a cross-sectional view of a coaxial via structure 100 according to an embodiment of the present disclosure. The coaxial via structure 100 includes a substrate 110, a second A conductive structure 120 , a second conductive structure 130 and an insulating layer 140 .

基板110具有相對的第一表面112與第二表面114。第一導電結構120包含第一線路122及第一通孔124,第二導電結構130包含第二線路132及第二通孔134。第一線路122與第二線路132位在第一表面112上。第一通孔124與第二通孔134貫穿基板110。第一通孔124與第二通孔134延伸於第一方向D1。第一線路122與第二線路132延伸於垂直第一方向D1的第二方向D2。第一導電結構120的第一線路122與第二導電結構130的第二線路132共平面。換句話說,第一線路122與第二線路132位在同一水平面上。 The substrate 110 has a first surface 112 and a second surface 114 opposite to each other. The first conductive structure 120 includes a first circuit 122 and a first through hole 124 , and the second conductive structure 130 includes a second circuit 132 and a second through hole 134 . The first wiring 122 and the second wiring 132 are located on the first surface 112 . The first through hole 124 and the second through hole 134 pass through the substrate 110 . The first through hole 124 and the second through hole 134 extend in the first direction D1. The first line 122 and the second line 132 extend in a second direction D2 perpendicular to the first direction D1. The first trace 122 of the first conductive structure 120 is coplanar with the second trace 132 of the second conductive structure 130 . In other words, the first line 122 and the second line 132 are on the same level.

在本實施例中,第一方向D1為圖中的垂直方向,亦即第一方向D1為自第一表面112朝向第二表面114的方向。第二方向D2可為任意垂直於第一方向D1的水平方向,合先敘明。在本實施例中,第一線路122與第三線路126可為接地線,第二線路132與第四線路136可為訊號線,但本揭露並不以此為限。 In this embodiment, the first direction D1 is a vertical direction in the figure, that is, the first direction D1 is a direction from the first surface 112 to the second surface 114 . The second direction D2 can be any horizontal direction perpendicular to the first direction D1, which will be described first. In this embodiment, the first line 122 and the third line 126 can be ground lines, and the second line 132 and the fourth line 136 can be signal lines, but the disclosure is not limited thereto.

如第1圖所示,第一導電結構120還包含位在第二表面114上的第三線路126,第二導電結構130還包含位在第二表面114上的第四線路136。第一通孔124的兩端分別連接第一線路122與第三線路126。第二通孔134的兩端分別連接第二線路132與第四線路136。第三線路126與第四線路136延伸於第二方向D2,且第三線路126與第四線路136共平面。換句話 說,第三線路126與第四線路136位在同一水平面上。 As shown in FIG. 1 , the first conductive structure 120 further includes a third circuit 126 on the second surface 114 , and the second conductive structure 130 further includes a fourth circuit 136 on the second surface 114 . Two ends of the first through hole 124 are respectively connected to the first circuit 122 and the third circuit 126 . Two ends of the second through hole 134 are respectively connected to the second circuit 132 and the fourth circuit 136 . The third line 126 and the fourth line 136 extend in the second direction D2, and the third line 126 and the fourth line 136 are coplanar. In other words That is, the third line 126 and the fourth line 136 are on the same level.

絕緣層140位在第一通孔124與第二通孔134之間,且絕緣層140延伸於第一方向D1。第一通孔124圍繞第二通孔134與絕緣層140,且絕緣層140圍繞第二通孔134。如第1圖所示,絕緣層140、第一通孔124與第二通孔134相對於軸心A共軸。 The insulating layer 140 is located between the first through hole 124 and the second through hole 134 , and the insulating layer 140 extends in the first direction D1. The first through hole 124 surrounds the second through hole 134 and the insulating layer 140 , and the insulating layer 140 surrounds the second through hole 134 . As shown in FIG. 1 , the insulating layer 140 , the first through hole 124 and the second through hole 134 are coaxial with respect to the axis A. As shown in FIG.

絕緣層140為具有填充料146的填孔劑,且填充料146包含空氣。由於空氣的介電常數值(Dk)為1,絕緣層140整體的介電常數可藉由添加空氣而降低。如此一來,可降低阻抗失配產生的功率損耗問題(Impedance Mismatch Loss)。 The insulating layer 140 is a pore filler with a filler 146 , and the filler 146 includes air. Since the dielectric constant value (Dk) of air is 1, the dielectric constant of the insulating layer 140 as a whole can be reduced by adding air. In this way, the power loss problem (Impedance Mismatch Loss) caused by impedance mismatch can be reduced.

第2圖為第1圖中的第一通孔124、第二線路132、第二通孔134以及絕緣層140的立體圖。同時參照第1圖與第2圖。絕緣層140具有第一突出部142,且第一突出部142位在絕緣層140靠近第一表面112的末端。第一突出部142沿著第二方向D2遠離第二通孔134突出。如第1圖所示,基板110還包含位在第一表面112與第二表面114之間的介電層150。在本實施例中,基板110還包含藉由介電層150分隔的多層內部線路116,但本揭露並不以此為限。絕緣層140的第一突出部142接觸靠近第一表面112的介電層150。換句話說,第一突出部142穿過第一通孔124而延伸至介電層150。 FIG. 2 is a perspective view of the first through hole 124 , the second circuit 132 , the second through hole 134 and the insulating layer 140 in FIG. 1 . Refer to Figure 1 and Figure 2 at the same time. The insulating layer 140 has a first protruding portion 142 , and the first protruding portion 142 is located at an end of the insulating layer 140 close to the first surface 112 . The first protrusion 142 protrudes away from the second through hole 134 along the second direction D2. As shown in FIG. 1 , the substrate 110 further includes a dielectric layer 150 between the first surface 112 and the second surface 114 . In this embodiment, the substrate 110 further includes multilayer internal circuits 116 separated by the dielectric layer 150 , but the disclosure is not limited thereto. The first protrusion 142 of the insulating layer 140 contacts the dielectric layer 150 close to the first surface 112 . In other words, the first protruding portion 142 extends to the dielectric layer 150 through the first through hole 124 .

如第1圖所示,第一導電結構120的第一通孔 124、絕緣層140的第一突出部142、以及第二導電結構130的第二線路132於第一方向D1上重疊。第二導電結構130的第二線路132自第二通孔134延伸並跨過第一突出部142。換句話說,第一通孔124與第二線路132藉由第一突出部142電性絕緣,且共平面的第一線路122與第二線路132彼此分隔,藉此使得第一導電結構120與第二導電結構130電性絕緣。 As shown in Figure 1, the first through hole of the first conductive structure 120 124 , the first protruding portion 142 of the insulating layer 140 , and the second line 132 of the second conductive structure 130 overlap in the first direction D1. The second line 132 of the second conductive structure 130 extends from the second through hole 134 and crosses the first protrusion 142 . In other words, the first through hole 124 and the second circuit 132 are electrically insulated by the first protrusion 142 , and the coplanar first circuit 122 and the second circuit 132 are separated from each other, so that the first conductive structure 120 and the second circuit 132 are separated from each other. The second conductive structure 130 is electrically insulated.

根據上述可知,由於共軸通孔結構100的第一線路122與第二線路132共平面,且第一導電結構120與第二導電結構130電性絕緣,可省略以往需增加額外的介電層以使位在不同層的第一線路與第二線路電性絕緣的步驟。如此一來,本案的第一通孔124與第二通孔134大致可具有相同的高度,使得共軸通孔結構100的整體結構較為對稱,進而提升阻抗匹配的效果。此外,由於本案可省略位在不同層的第一線路與第二線路之間的介電層,因此避免了第二通孔134突出於絕緣層外的狀況。如此一來,本案的共軸通孔結構可避免屏蔽結構的缺口導致電磁屏蔽效果不佳的問題。 According to the above, since the first line 122 and the second line 132 of the coaxial via structure 100 are coplanar, and the first conductive structure 120 and the second conductive structure 130 are electrically insulated, the addition of an additional dielectric layer in the past can be omitted. A step of electrically isolating the first wiring on different layers from the second wiring. In this way, the first through hole 124 and the second through hole 134 in this application may have approximately the same height, so that the overall structure of the coaxial through hole structure 100 is more symmetrical, thereby improving the effect of impedance matching. In addition, since the present invention can omit the dielectric layer between the first circuit and the second circuit in different layers, the situation that the second through hole 134 protrudes out of the insulating layer is avoided. In this way, the coaxial through-hole structure in this case can avoid the problem of poor electromagnetic shielding effect caused by the gap in the shielding structure.

如第1圖所示,絕緣層140還具有第二突出部144,且第二突出部144位在絕緣層140靠近第二表面114的末端。第二突出部144沿著第二方向D2遠離第二通孔134突出。絕緣層140的第二突出部144接觸靠近第二表面114的介電層150。換句話說,第二突出部144穿過第一通孔124而延伸至介電層150。 As shown in FIG. 1 , the insulating layer 140 also has a second protruding portion 144 , and the second protruding portion 144 is located at an end of the insulating layer 140 close to the second surface 114 . The second protrusion 144 protrudes away from the second through hole 134 along the second direction D2. The second protrusion 144 of the insulating layer 140 contacts the dielectric layer 150 near the second surface 114 . In other words, the second protrusion 144 extends to the dielectric layer 150 through the first through hole 124 .

如第1圖所示,第一導電結構120的第一通孔124、絕緣層140的第二突出部144、以及第二導電結構130的第四線路136於第一方向D1上重疊。第二導電結構130的第四線路136自第二通孔134延伸並跨過第二突出部144。換句話說,第一通孔124與第四線路136藉由第二突出部144電性絕緣,且第三線路126與第四線路136彼此分隔,藉此使得第一導電結構120與第二導電結構130電性絕緣。如同前述,第四線路136的延伸方向可為任意垂直於第一方向D1的水平方向,第1圖僅為示例,本揭露並不以此為限。 As shown in FIG. 1 , the first through hole 124 of the first conductive structure 120 , the second protrusion 144 of the insulating layer 140 , and the fourth line 136 of the second conductive structure 130 overlap in the first direction D1 . The fourth line 136 of the second conductive structure 130 extends from the second through hole 134 and crosses the second protrusion 144 . In other words, the first through hole 124 and the fourth circuit 136 are electrically insulated by the second protrusion 144, and the third circuit 126 and the fourth circuit 136 are separated from each other, thereby making the first conductive structure 120 and the second conductive structure 120 electrically insulated. Structure 130 is electrically insulated. As mentioned above, the extending direction of the fourth line 136 can be any horizontal direction perpendicular to the first direction D1, and FIG. 1 is only an example, and the present disclosure is not limited thereto.

應瞭解到,已敘述過的元件連接關係、材料與功效將不再重複贅述,合先敘明。在以下敘述中,將說明共軸通孔結構的製造方法。 It should be understood that the connection relationship, materials and functions of the components that have been described will not be repeated, and will be described first. In the following description, the manufacturing method of the coaxial via structure will be described.

第3A圖至第10A圖為根據本揭露一實施例之共軸通孔結構的製造方法的中間步驟的俯視圖。第3B圖至第10B圖分別為沿著第3A圖至第10B圖中線段3B-3B至線段10B-10B的剖面圖。如第3A圖及第3B圖所示,共軸通孔結構的製造方法開始於形成第一貫孔OP1於基板110中。第一貫孔OP1貫穿基板110的內部線路116與介電層150。舉例來說,形成第一貫孔OP1的方式可為雷射鑽孔。 FIG. 3A to FIG. 10A are top views of intermediate steps of a method for manufacturing a coaxial via structure according to an embodiment of the present disclosure. Figures 3B to 10B are cross-sectional views along line 3B-3B to line 10B-10B in Figures 3A to 10B, respectively. As shown in FIG. 3A and FIG. 3B , the manufacturing method of the coaxial via structure begins with forming the first through hole OP1 in the substrate 110 . The first through hole OP1 penetrates through the internal circuit 116 and the dielectric layer 150 of the substrate 110 . For example, the method of forming the first through hole OP1 may be laser drilling.

如第4A圖及第4B圖所示,在共軸通孔結構的製造方法中,接著將第一導電材料120M形成於第一表面112上、第二表面114上以及第一貫孔OP1的內壁 上。形成第一導電材料120M的方式例如為電鍍,第一導電材料120M例如為銅,但本揭露並不以為限,本領域人士當可視情況選擇適當的方法與材料。 As shown in FIG. 4A and FIG. 4B, in the manufacturing method of the coaxial through hole structure, the first conductive material 120M is then formed on the first surface 112, on the second surface 114 and in the first through hole OP1 wall superior. The method of forming the first conductive material 120M is, for example, electroplating, and the first conductive material 120M is, for example, copper, but the present disclosure is not limited thereto, and those skilled in the art can select appropriate methods and materials according to actual conditions.

如第5A圖及第5B圖所示,在共軸通孔結構的製造方法中,接著形成第一凹槽TR1。第一凹槽TR1自第一表面112凹陷,且第一凹槽TR1與第一貫孔OP1連通。形成第一凹槽TR1的方式包含自第一表面112沿著第一方向D1鑽孔,並使得靠近第一表面112的介電層150自第一導電材料120M曝露。 As shown in FIG. 5A and FIG. 5B , in the manufacturing method of the coaxial through-hole structure, the first groove TR1 is formed next. The first groove TR1 is recessed from the first surface 112 , and the first groove TR1 communicates with the first through hole OP1 . The method of forming the first groove TR1 includes drilling from the first surface 112 along the first direction D1, and exposing the dielectric layer 150 close to the first surface 112 from the first conductive material 120M.

參照第5B圖,此步驟還包含形成第二凹槽TR2。第二凹槽TR2自第二表面114凹陷,且第二凹槽TR2與第一貫孔OP1連通。形成第二凹槽TR2的方式包含自第二表面114沿著第一方向D1的反方向鑽孔,並使得靠近第二表面114的介電層150自第一導電材料120M曝露。舉例來說,形成第一凹槽TR1及第二凹槽TR2的方式可為雷射鑽孔。 Referring to FIG. 5B, this step also includes forming a second groove TR2. The second groove TR2 is recessed from the second surface 114 , and the second groove TR2 communicates with the first through hole OP1 . The method of forming the second groove TR2 includes drilling from the second surface 114 along the direction opposite to the first direction D1, and exposing the dielectric layer 150 close to the second surface 114 from the first conductive material 120M. For example, the method of forming the first groove TR1 and the second groove TR2 may be laser drilling.

在第5A圖的俯視視角中,第一凹槽TR1與第一貫孔OP1的距離可根據第二線路132的寬度以及第一線路122與第二線路132之間所需的間距計算而得出。同樣地,在仰視視角中(圖未示),第二凹槽TR2與第一貫孔OP1的距離可根據第四線路136的寬度以及第三線路126與第四線路136之間所需的間距計算而得出。 In the top view of FIG. 5A, the distance between the first groove TR1 and the first through hole OP1 can be calculated according to the width of the second line 132 and the required distance between the first line 122 and the second line 132 . Similarly, in a bottom view (not shown), the distance between the second groove TR2 and the first through hole OP1 can be determined according to the width of the fourth line 136 and the required distance between the third line 126 and the fourth line 136 calculated.

如第6A圖及第6B圖所示,在共軸通孔結構的製造方法中,接著將絕緣層材料140M填充至第一貫孔 OP1、第一凹槽TR1及第二凹槽TR2中,並使得絕緣層材料140M接觸自第一導電材料120M曝露的介電層150。在本實施例中,絕緣層材料140M例如可為填孔油墨,但本揭露並不以此為限。如同前述,絕緣層材料140M具有內含空氣的填充料146。在填充絕緣層材料140M後,研磨絕緣層材料140M自第一表面112與第二表面114露出的部份,使得絕緣層140的上表面與下表面分別與第一導電材料120M齊平。 As shown in FIG. 6A and FIG. 6B, in the manufacturing method of the coaxial via structure, the insulating layer material 140M is then filled into the first via hole OP1, the first groove TR1 and the second groove TR2, and make the insulating layer material 140M contact the dielectric layer 150 exposed from the first conductive material 120M. In this embodiment, the insulating layer material 140M can be, for example, hole-filling ink, but the disclosure is not limited thereto. As mentioned above, the insulating layer material 140M has a filler 146 containing air. After filling the insulating layer material 140M, the exposed parts of the insulating layer material 140M from the first surface 112 and the second surface 114 are ground so that the upper surface and the lower surface of the insulating layer 140 are respectively flush with the first conductive material 120M.

如第7A圖及第7B圖所示,在共軸通孔結構的製造方法中,接著形成第二貫孔OP2於絕緣層材料140M中。在本實施例中,第二貫孔OP2與第一貫孔OP1為同心圓。舉例來說,形成第二貫孔OP2的方式為雷射鑽孔,藉此移除一部分的絕緣層材料140M。在形成第二貫孔OP2後,剩餘的絕緣層材料140M包含位在第一貫孔OP1中的部份(即絕緣層140)以及分別位在基板110兩側的第一突出部142與第二突出部144。 As shown in FIG. 7A and FIG. 7B , in the manufacturing method of the coaxial via structure, the second through hole OP2 is then formed in the insulating layer material 140M. In this embodiment, the second through hole OP2 and the first through hole OP1 are concentric circles. For example, the method of forming the second through hole OP2 is laser drilling, thereby removing a part of the insulating layer material 140M. After the second through hole OP2 is formed, the remaining insulating layer material 140M includes the part (ie, the insulating layer 140 ) located in the first through hole OP1 and the first protruding portion 142 and the second protruding portion 142 respectively located on both sides of the substrate 110 . protrusion 144 .

如第8A圖及第8B圖所示,在共軸通孔結構的製造方法中,接著將第二導電材料130M形成於第一表面112上、第二表面114上以及第二貫孔OP2中。形成第一導電材料120M的方式例如可為電鍍,第一導電材料120M例如為銅,但本揭露並不以此為限,本領域人士當可視情況選擇適當的方法與材料。 As shown in FIG. 8A and FIG. 8B , in the manufacturing method of the coaxial via structure, the second conductive material 130M is then formed on the first surface 112 , on the second surface 114 and in the second through hole OP2 . The method of forming the first conductive material 120M can be, for example, electroplating, and the first conductive material 120M is, for example, copper, but the present disclosure is not limited thereto, and those skilled in the art can select appropriate methods and materials according to actual conditions.

第二導電材料130M位在第二貫孔OP2中,且第一貫孔OP1中的第一導電材料120M(即第一通孔 124)包圍絕緣層140與第二貫孔OP2中的第二導電材料130M(即第二通孔134),使得絕緣層140、第一貫孔OP1中的第一導電材料120M與第二貫孔OP2中的第二導電材料130M相對於軸心A共軸。 The second conductive material 130M is located in the second through hole OP2, and the first conductive material 120M in the first through hole OP1 (that is, the first through hole 124) surround the insulating layer 140 and the second conductive material 130M in the second through hole OP2 (that is, the second through hole 134), so that the insulating layer 140, the first conductive material 120M in the first through hole OP1 and the second through hole The second conductive material 130M in OP2 is coaxial with respect to the axis A.

如第9A圖及第9B圖所示,在共軸通孔結構的製造方法中,接著形成光罩160於第一表面112與第二表面114上。光罩160包含用以形成第一線路122與第二線路132的圖案以及用以形成第三線路126與第四線路136的圖案。 As shown in FIG. 9A and FIG. 9B , in the manufacturing method of the coaxial via structure, a mask 160 is then formed on the first surface 112 and the second surface 114 . The photomask 160 includes patterns for forming the first lines 122 and the second lines 132 and patterns for forming the third lines 126 and the fourth lines 136 .

如第10A圖及第10B圖所示,在共軸通孔結構的製造方法中,接著藉由光罩160圖案化第一導電材料120M與第二導電材料130M。自光罩160露出的第二導電材料130M及第一導電材料120M接續地被移除直到絕緣層140與介電層150自光罩160露出。 As shown in FIG. 10A and FIG. 10B , in the manufacturing method of the coaxial via structure, the first conductive material 120M and the second conductive material 130M are then patterned by a photomask 160 . The second conductive material 130M and the first conductive material 120M exposed from the photomask 160 are successively removed until the insulating layer 140 and the dielectric layer 150 are exposed from the photomask 160 .

同時參照第10A圖、第10B圖、第11A圖及第11B圖。在共軸通孔結構的製造方法中,最後將光罩160移除,並形成絕緣保護層170。絕緣保護層170具有開口以連接導電件,例如金屬凸塊、凸塊或焊球(圖未示)。 Also refer to Figures 10A, 10B, 11A and 11B. In the manufacturing method of the coaxial via structure, the photomask 160 is finally removed, and the insulating protection layer 170 is formed. The insulating protection layer 170 has openings for connecting conductive elements, such as metal bumps, bumps or solder balls (not shown).

如第11B圖所示,在上述的步驟之後,即可形成彼此分隔的第一線路122與第二線路132,且第一線路122與第二線路132共平面。第一通孔124與第二線路132藉由第一凹槽TR1中的第一突出部142電性絕緣。第一線路122可包含任意線路圖案,只要第一線 路122與第二線路132電性絕緣即可。 As shown in FIG. 11B , after the above steps, the first lines 122 and the second lines 132 separated from each other can be formed, and the first lines 122 and the second lines 132 are coplanar. The first through hole 124 and the second circuit 132 are electrically insulated by the first protrusion 142 in the first groove TR1. The first line 122 can contain any line pattern, as long as the first line It is sufficient that the circuit 122 is electrically insulated from the second circuit 132 .

同樣地,在上述的步驟之後,即可形成彼此分隔的第三線路126與第四線路136,且第三線路126與第四線路136共平面。第一通孔124與第四線路136藉由第二凹槽TR2中的第二突出部144電性絕緣。第三線路126可包含任意線路圖案(圖未示),只要第三線路126與第四線路136電性絕緣即可。 Similarly, after the above steps, the third lines 126 and the fourth lines 136 separated from each other can be formed, and the third lines 126 and the fourth lines 136 are coplanar. The first through hole 124 is electrically insulated from the fourth line 136 by the second protrusion 144 in the second groove TR2. The third circuit 126 may include any circuit pattern (not shown), as long as the third circuit 126 is electrically insulated from the fourth circuit 136 .

參照第11A圖。在本實例中,第二線路132具有寬度W1,且絕緣層140與第一突出部142連接處具有寬度W2。寬度W2可藉由改變第一凹槽TR1與第一貫孔OP1的距離而對應地調整,寬度W2也可取決於第一凹槽TR1的孔徑。因此,根據所需的寬度W1,可在形成第一凹槽TR1的步驟中計算出第一凹槽TR1與第一貫孔OP1的適當距離。如此一來,可確保寬度W2足夠寬,以藉此降低第二線路132的斷線風險。第二線路132與相鄰的第一線路122之間具有間距I。在特定阻抗的需求限制下,可根據第二線路132的寬度W1與厚度、介電層150之參數決定間距I,藉此提升阻抗匹配效果。 See Figure 11A. In this example, the second line 132 has a width W1, and the connection between the insulating layer 140 and the first protrusion 142 has a width W2. The width W2 can be correspondingly adjusted by changing the distance between the first groove TR1 and the first through hole OP1, and the width W2 can also depend on the diameter of the first groove TR1. Therefore, according to the required width W1, an appropriate distance between the first groove TR1 and the first through hole OP1 can be calculated in the step of forming the first groove TR1. In this way, the width W2 can be ensured to be wide enough to reduce the risk of disconnection of the second circuit 132 . There is an interval I between the second line 132 and the adjacent first line 122 . Under the limitation of specific impedance requirements, the distance I can be determined according to the width W1 and thickness of the second line 132 and the parameters of the dielectric layer 150 , so as to improve the impedance matching effect.

第12A圖為根據本揭露另一實施例之共軸通孔結構100a結構的上視圖。第12B圖為沿著第12A圖中線段12B-12B的剖面圖。共軸通孔結構100a與第1圖的共軸通孔結構100大致相同,其差異在於共軸通孔結構100a的絕緣層140a不具有填充料146(見第1圖), 且共軸通孔結構100a具有空氣孔148a。空氣孔148a位在第一通孔124與第二通孔134之間。空氣孔148a沿著第一方向D1貫穿絕緣層140a。第一方向D1相當於第12A圖中垂直入紙面的方向。空氣孔148a可藉由機械鑽孔方式形成。在本實施例中,共軸通孔結構100a具有6個空氣孔148a,以環繞第二通孔134的方式排列,但本揭露並不以此為限。空氣孔148a的數量與大小可根據實際需求而調整,只要絕緣層140a可具有足以支撐第二通孔134與第二線路132的結構支撐力即可。由於空氣的介電常數值(Dk)為1,絕緣層140a整體的介電常數可藉由空氣孔148a而降低。藉此,可降低阻抗失配產生的功率損耗問題。 FIG. 12A is a top view of a coaxial via structure 100a according to another embodiment of the present disclosure. Figure 12B is a cross-sectional view along line 12B-12B in Figure 12A. The coaxial via structure 100a is substantially the same as the coaxial via structure 100 in FIG. 1, the difference is that the insulating layer 140a of the coaxial via structure 100a does not have a filler 146 (see FIG. 1), And the coaxial through-hole structure 100a has an air hole 148a. The air hole 148 a is located between the first through hole 124 and the second through hole 134 . The air hole 148a penetrates the insulating layer 140a along the first direction D1. The first direction D1 corresponds to the direction perpendicular to the paper in FIG. 12A. The air holes 148a can be formed by mechanical drilling. In this embodiment, the coaxial through-hole structure 100 a has six air holes 148 a arranged in a manner surrounding the second through-hole 134 , but the disclosure is not limited thereto. The number and size of the air holes 148 a can be adjusted according to actual requirements, as long as the insulating layer 140 a has enough structural support to support the second through hole 134 and the second circuit 132 . Since the dielectric constant value (Dk) of air is 1, the dielectric constant of the insulating layer 140a as a whole can be reduced by the air holes 148a. In this way, the problem of power loss caused by impedance mismatch can be reduced.

第13圖為根據本揭露另一實施例之共軸通孔結構100b的上視圖。共軸通孔結構100b與第12A圖的共軸通孔結構100a大致相同,其差異在於共軸通孔結構100b的空氣孔148b在第一方向D1(見第12B圖)上的俯視形狀為弧形。第一方向D1相當於第13圖中垂直入紙面的方向。換句話說,弧形的空氣孔148b可視為由多個第12圖的空氣孔148a構成的撈槽,空氣孔148b可藉由銑槽方式形成。在本實施例中,共軸通孔結構100a具有3個空氣孔148b,但本揭露並不以此為限。空氣孔148b的數量與大小可根據實際需求而調整,只要絕緣層140b可具有足以支撐第二通孔134與第二線路132的結構支撐力即可。由於空氣的介電常數值(Dk) 為1,絕緣層140b整體的介電常數可藉由空氣孔148b而降低。藉此,可降低通孔阻抗失配產生的功率損耗問題。 FIG. 13 is a top view of a coaxial via structure 100b according to another embodiment of the present disclosure. The coaxial through-hole structure 100b is substantially the same as the coaxial through-hole structure 100a in FIG. 12A, the difference is that the top view shape of the air hole 148b in the coaxial through-hole structure 100b in the first direction D1 (see FIG. 12B ) is an arc shape. The first direction D1 corresponds to the direction perpendicular to the paper surface in FIG. 13 . In other words, the arc-shaped air hole 148b can be regarded as a slot formed by a plurality of air holes 148a in FIG. 12 , and the air hole 148b can be formed by milling. In this embodiment, the coaxial through-hole structure 100a has three air holes 148b, but the disclosure is not limited thereto. The number and size of the air holes 148b can be adjusted according to actual needs, as long as the insulating layer 140b has enough structural support to support the second through hole 134 and the second circuit 132 . Due to the dielectric constant value of air (Dk) is 1, the overall dielectric constant of the insulating layer 140b can be reduced by the air holes 148b. In this way, the problem of power loss caused by the impedance mismatch of the vias can be reduced.

綜上所述,由於本揭露的共軸通孔結構具有共平面的接地線與訊號線(第一線路與第二線路),且第一導電結構與第二導電結構可透過絕緣層電性絕緣,因此本揭露的共軸通孔結構可具有較佳的電磁雜訊屏蔽以及阻抗匹配效果,以提升高頻訊號完整性。本揭露的共軸通孔結構還可減少介電層的數量、縮減共軸通孔結構的厚度、並降低成本。此外,共軸通孔結構的絕緣層整體的介電常數可藉由填充料或空氣孔而降低。藉此,可降低通孔阻抗失配產生的功率損耗問題。 In summary, since the coaxial via structure of the present disclosure has coplanar ground lines and signal lines (the first line and the second line), and the first conductive structure and the second conductive structure can be electrically insulated through the insulating layer , so the coaxial via structure of the present disclosure can have better electromagnetic noise shielding and impedance matching effects, so as to improve the integrity of high-frequency signals. The disclosed coaxial via structure can also reduce the number of dielectric layers, reduce the thickness of the coaxial via structure, and lower the cost. In addition, the overall dielectric constant of the insulating layer of the coaxial via structure can be reduced by fillers or air holes. In this way, the problem of power loss caused by the impedance mismatch of the vias can be reduced.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above in terms of implementation, it is not intended to limit the present invention. Anyone skilled in this art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be defined by the appended patent application scope.

110:基板 110: Substrate

112:第一表面 112: first surface

114:第二表面 114: second surface

116:內部線路 116: Internal wiring

120:第一導電結構 120: the first conductive structure

122:第一線路 122: The first line

124:第一通孔 124: the first through hole

126:第三線路 126: The third line

130:第二導電結構 130: second conductive structure

132:第二線路 132: second line

134:第二通孔 134: Second through hole

136:第四線路 136: The fourth line

140:絕緣層 140: insulating layer

142:第一突出部 142: The first protrusion

144:第二突出部 144: second protrusion

146:填充料 146: filler

150:介電層 150: dielectric layer

A:軸心 A: axis

D1:第一方向 D1: the first direction

D2:第二方向 D2: Second direction

Claims (10)

一種共軸通孔結構,包含: 一基板,具有一第一表面; 一第一導電結構,包含位在該第一表面上的一第一線路與貫穿該基板的一第一通孔; 一第二導電結構,包含位在該基板的第一表面上的一第二線路與貫穿該基板的一第二通孔,該第一通孔與該第二通孔延伸於一第一方向,該第一線路與該第二線路延伸於一第二方向,且該第二方向垂直於該第一方向;以及 一絕緣層,位在該第一通孔與該第二通孔之間,其中該絕緣層具有一填充料,第一導電結構與該第二導電結構電性絕緣,且該第一線路與該第二線路共平面。 A coaxial via structure comprising: A substrate having a first surface; A first conductive structure, comprising a first circuit on the first surface and a first through hole penetrating the substrate; a second conductive structure comprising a second circuit on the first surface of the substrate and a second through hole penetrating through the substrate, the first through hole and the second through hole extending in a first direction, the first line and the second line extend in a second direction, and the second direction is perpendicular to the first direction; and An insulating layer is located between the first through hole and the second through hole, wherein the insulating layer has a filling material, the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second conductive structure are electrically insulated. The second line is coplanar. 如請求項1所述之共軸通孔結構,其中該填充料包含空氣。The coaxial via structure as claimed in claim 1, wherein the filler contains air. 如請求項1所述之共軸通孔結構,其中該第一導電結構的該第一通孔圍繞該第二導電結構的該第二通孔與該絕緣層。The coaxial via structure as claimed in claim 1, wherein the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer. 如請求項1所述之共軸通孔結構,其中該絕緣層、該第一通孔與該第二通孔共軸。The coaxial via structure as claimed in claim 1, wherein the insulating layer, the first via hole and the second via hole are coaxial. 如請求項1所述之共軸通孔結構,其中該絕緣層具有一突出部,位在該絕緣層靠近該第一表面的一末端。The coaxial via structure as claimed in claim 1, wherein the insulating layer has a protruding portion located at an end of the insulating layer close to the first surface. 一種共軸通孔結構,包含: 一基板,具有一第一表面; 一第一導電結構,包含位在該第一表面上的一第一線路與貫穿該基板的一第一通孔; 一第二導電結構,包含位在該基板的第一表面上的一第二線路與貫穿該基板的一第二通孔,該第一通孔與該第二通孔延伸於一第一方向,該第一線路與該第二線路延伸於一第二方向,且該第二方向垂直於該第一方向; 一絕緣層,位在該第一通孔與該第二通孔之間,其中該第一導電結構與該第二導電結構電性絕緣,且該第一線路與該第二線路共平面;以及 一空氣孔,位在該第一通孔與該第二通孔之間,且該空氣孔沿著該第一方向貫穿該絕緣層。 A coaxial via structure comprising: A substrate having a first surface; A first conductive structure, comprising a first circuit on the first surface and a first through hole penetrating the substrate; a second conductive structure comprising a second circuit on the first surface of the substrate and a second through hole penetrating through the substrate, the first through hole and the second through hole extending in a first direction, the first line and the second line extend in a second direction, and the second direction is perpendicular to the first direction; an insulating layer located between the first via hole and the second via hole, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first line is coplanar with the second line; and An air hole is located between the first through hole and the second through hole, and the air hole penetrates the insulating layer along the first direction. 如請求項6所述之共軸通孔結構,其中該空氣孔在該第一方向上的俯視形狀為弧形,且該空氣孔圍繞該第二通孔。The coaxial through-hole structure according to claim 6, wherein the top view shape of the air hole in the first direction is arc-shaped, and the air hole surrounds the second through-hole. 如請求項6所述之共軸通孔結構,其中該第一導電結構的該第一通孔圍繞該第二導電結構的該第二通孔與該絕緣層。The coaxial via structure as claimed in claim 6, wherein the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer. 如請求項6所述之共軸通孔結構,其中該絕緣層、該第一通孔與該第二通孔共軸。The coaxial via structure according to claim 6, wherein the insulating layer, the first via hole and the second via hole are coaxial. 如請求項6所述之共軸通孔結構,其中該絕緣層具有一突出部,位在該絕緣層靠近該第一表面的一末端。The coaxial via structure as claimed in claim 6, wherein the insulating layer has a protruding portion located at an end of the insulating layer close to the first surface.
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