TWI803174B - Ball pad applied for ball grid array package substrate and the forming method thereof - Google Patents
Ball pad applied for ball grid array package substrate and the forming method thereof Download PDFInfo
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- TWI803174B TWI803174B TW111103732A TW111103732A TWI803174B TW I803174 B TWI803174 B TW I803174B TW 111103732 A TW111103732 A TW 111103732A TW 111103732 A TW111103732 A TW 111103732A TW I803174 B TWI803174 B TW I803174B
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- substrate
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- grid array
- conductive
- ball pad
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 239000003292 glue Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
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- Coupling Device And Connection With Printed Circuit (AREA)
- Wire Bonding (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
本發明涉及一種球柵陣列封裝基板,特別是有關於一種應用於球柵陣列封裝基板的具有凹凸結構的球墊及其形成方法。 The invention relates to a ball grid array packaging substrate, in particular to a ball pad with a concave-convex structure applied to a ball grid array packaging substrate and a forming method thereof.
近年來隨著攜帶式(portable)電子產品、手持式通訊及消費型電子產品的成長性已凌駕於傳統個人電腦產品之上,電子元件不斷地朝向高容量、窄線寬的高密度比、高頻、低耗能、多功能整合方向發展。而在積體電路(integrated circuit,IC)封裝技術領域,為配合高輸入/輸出(I/O)數、高散熱以及封裝尺寸縮小化的要求下,使得晶粒級封裝(chip scale package,CSP)、晶圓級封裝(wafer level package)等高階封裝技術需求不斷升高。 In recent years, as the growth of portable electronic products, handheld communication and consumer electronic products has surpassed traditional personal computer products, electronic components are constantly moving towards high-capacity, narrow-linewidth, high-density ratio, high-density frequency, low energy consumption, and multi-functional integration. In the field of integrated circuit (IC) packaging technology, in order to meet the requirements of high input/output (I/O), high heat dissipation, and package size reduction, chip scale package (CSP) ), wafer-level packaging (wafer level package) and other high-end packaging technology demand continues to rise.
有別於傳統以單一晶片為加工標的之封裝技術,晶圓級封裝以晶圓為封裝處理的對象,其主要目的在於簡化晶片的封裝製程,以節省時間及成本。在晶圓上之積體電路製作完成以後,便可直接對整片晶圓進行封裝製程,其後再進行晶圓切割以得到多顆晶片封裝結構,製作完成的晶片封裝結構可以安裝於載板上。 Different from the traditional packaging technology that takes a single chip as the processing target, wafer-level packaging takes the wafer as the object of packaging processing. Its main purpose is to simplify the chip packaging process to save time and cost. After the integrated circuit on the wafer is manufactured, the entire wafer can be packaged directly, and then the wafer is cut to obtain a multi-chip package structure. The completed chip package structure can be installed on the carrier board superior.
在使晶片與載板接合時,現有技術中是在晶片的焊墊上形成凸塊(bump),並以導電膠填充於晶片封裝結構的凸塊與載板的接墊之間。如在球柵陣列封裝基板的球墊為一整個圓形平面,於現行的輕薄短小及高I/O數的時代,則縮小錫球的球徑是必然的趨勢,但在現有技術中,縮小錫球的球徑之後會導致錫球的推力下降,即抗摔落能力下降。 When bonding the chip to the carrier board, in the prior art, bumps are formed on the pads of the chip, and conductive glue is filled between the bumps of the chip package structure and the pads of the carrier board. For example, the ball pad of the ball grid array package substrate is an entire circular plane. In the current era of thinness, shortness and high I/O count, it is an inevitable trend to reduce the ball diameter of the solder ball. However, in the existing technology, shrinking The ball diameter of the solder ball will cause the thrust of the solder ball to decrease, that is, the ability to resist falling.
根據現有技術的缺陷,本發明的主要目的提供一種應用於球柵陣列封裝基板的球墊,其球墊為凹凸結構,用以取代現有技術中球柵陣列封裝基板的平面球墊,藉由此凹凸結構以增加錫球與球墊之間的結合面,進而可以增加抗摔落能力。 According to the defects of the prior art, the main purpose of the present invention is to provide a ball pad applied to a ball grid array package substrate, the ball pad has a concave-convex structure, which is used to replace the flat ball pad of the ball grid array package substrate in the prior art, by which The concave-convex structure increases the joint surface between the solder ball and the ball pad, thereby increasing the drop resistance.
本發明的再一目的在於在基板製作過程中,線路完成蝕刻之後,再利用電鍍製程在球墊上形成多個肋條,將球墊原來的平面結構改變成凹凸結構以增加球墊的接觸面積,並增加錫球與球墊之間的結合面,進而可以增加整個球柵陣列封裝元件的抗摔落能力。 Another object of the present invention is to form a plurality of ribs on the ball pads by using electroplating process after the circuit is etched during the substrate manufacturing process, so as to change the original planar structure of the ball pads into a concave-convex structure to increase the contact area of the ball pads, and Increasing the bonding surface between the solder ball and the ball pad can increase the drop resistance of the entire ball grid array package component.
根據上述目的,本發明揭露一種應用於球柵陣列封裝基板的球墊,包括:基板,具有上表面及下表面,及在基板內具有貫穿上表面及下表面的多個導孔,且在各導孔內具有導電柱,且導電柱的上表面與基板的上表面為同一平面及導電柱的下表面與基板的下表面為同一平面;線路層,設置在暴露出的基板的部分上表面及暴露出的導電柱的上表面上;以及具有凹凸結構的多個球墊,具有凹凸結構的各球墊設置在基板的部分下表面及導電柱的下表面上。 According to the above purpose, the present invention discloses a ball pad applied to a ball grid array package substrate, comprising: a substrate having an upper surface and a lower surface, and a plurality of guide holes penetrating the upper surface and the lower surface in the substrate, and in each There is a conductive post in the guide hole, and the upper surface of the conductive post is on the same plane as the upper surface of the substrate and the lower surface of the conductive post is on the same plane as the lower surface of the substrate; the circuit layer is arranged on the exposed part of the upper surface of the substrate and on the exposed upper surface of the conductive column; and a plurality of ball pads with concave-convex structure, each ball pad with concave-convex structure is arranged on part of the lower surface of the substrate and the lower surface of the conductive column.
本發明還提供一種應用於球柵陣列封裝基板的球墊的形成方法,包括:提供具有多個導電柱的基板,導電柱貫穿基板,各導電柱的上表面與基板的上表面為同一平面及各導電柱的下表面與基板的下表面為同一平面;形成線路層以覆蓋暴露出的基板的部分上表面及暴露出的各導電柱的上表面;形成多個球墊以分別覆蓋基板的部分下表面及各導電柱的下表面;執行電鍍製程以形成多個肋條在導電柱的下表面的各球墊的表面上,使得各球墊為凹凸結構,據此,利用具有凹凸結構的球墊以增加接觸面積,並增加與錫球之間的結合面,進而可以增加整個球柵陣列封裝元件的抗摔落能力。 The present invention also provides a method for forming a ball pad applied to a ball grid array package substrate, comprising: providing a substrate with a plurality of conductive pillars, the conductive pillars penetrate the substrate, the upper surface of each conductive pillar is the same plane as the upper surface of the substrate, and The lower surface of each conductive column is on the same plane as the lower surface of the substrate; a circuit layer is formed to cover the exposed part of the upper surface of the substrate and the exposed upper surface of each conductive column; a plurality of ball pads are formed to respectively cover the part of the substrate The lower surface and the lower surface of each conductive pillar; performing an electroplating process to form a plurality of ribs on the surface of each ball pad on the lower surface of the conductive pillar, so that each ball pad has a concave-convex structure. Accordingly, using the ball pad with a concave-convex structure In order to increase the contact area and increase the bonding surface with the solder balls, thereby increasing the drop resistance of the entire ball grid array package component.
10:基板 10: Substrate
102:基板的上表面 102: the upper surface of the substrate
104:基板的下表面 104: the lower surface of the substrate
20:導孔 20: Guide hole
30:導電柱 30: Conductive column
302:導電柱的上表面 302: the upper surface of the conductive column
304:導電柱的下表面 304: the lower surface of the conductive column
40:線路層 40: Line layer
50:球墊 50: ball cushion
502:肋條 502: Ribs
60、62:防焊層 60, 62: Solder mask
70:半導體元件 70: Semiconductor components
70a、70b、70c:晶片 70a, 70b, 70c: Wafers
72a:非導電膠 72a: Non-conductive glue
72b、72c:黏晶膠 72b, 72c: sticky glue
80a、80b、80c:導線 80a, 80b, 80c: wires
90:封裝體 90: Encapsulation
95:錫球 95: solder ball
圖1A是根據本發明所揭露的技術,表示在基板內具有多個導孔的結構示意圖;圖1B是根據本發明所揭露的技術,表示在基板內具有多個導電柱的結構示意圖;圖2是根據本發明所揭露的技術,表示在基板的上表面形成線路層及在基板的下表面形成球墊的結構示意圖;圖3是根據本發明所揭露的技術,表示在基板的下表面的球墊上形成肋條的結構示意圖;圖4是根據本發明所揭露的技術,表示在基板的上表面及下表面上形成防焊層的及在基板的上表面形成半導體元件及封裝體的結構示意圖;以及 圖5是根據本發明所揭露的技術,表示在具有凹凸結構的球墊上形成錫球的結構示意圖。 FIG. 1A is a schematic diagram showing the structure of multiple guide holes in the substrate according to the technology disclosed in the present invention; FIG. 1B is a schematic diagram showing the structure of multiple conductive columns in the substrate according to the technology disclosed in the present invention; FIG. 2 According to the technology disclosed in the present invention, it shows a schematic diagram of the structure of forming a circuit layer on the upper surface of the substrate and forming a ball pad on the lower surface of the substrate; FIG. 3 shows a ball on the lower surface of the substrate according to the technology disclosed in the present invention. Schematic diagram of the structure of ribs formed on the pad; FIG. 4 is a schematic diagram of the structure of forming a solder resist layer on the upper surface and the lower surface of the substrate and forming a semiconductor element and a package on the upper surface of the substrate according to the technology disclosed in the present invention; and FIG. 5 is a schematic diagram showing the structure of solder balls formed on ball pads with a concave-convex structure according to the technology disclosed in the present invention.
首先,請參考圖1A及圖1B。圖1A是表示在基板內具有多個導孔的結構示意圖及圖1B是表示在導孔內形成導電層以形成導電柱的結構示意圖。在圖1A中,基板10具有上表面102及下表面104,於基板10內具有多個導孔(via)20,其中在基板10內的導孔20貫穿基板10的上表面102及下表面104,且這些導孔20是利用雷射鑽孔或是機械鑽孔來形成。接著,再利用電鍍製程將銅電鍍於基板10的這些導孔20內以形成導電柱30,如圖1B所示,這些導電柱30的上表面302與基板10的上表面102為同一平面,同樣的,導電柱30的下表面304與基板10的下表面104為同一平面。
First, please refer to FIG. 1A and FIG. 1B . FIG. 1A is a schematic diagram showing a structure with a plurality of vias in a substrate and FIG. 1B is a schematic diagram showing a conductive layer formed in the vias to form conductive pillars. In FIG. 1A, the
接著請參考圖2。圖2是表示在基板的上表面形成線路層及基板的下表面形成球墊的結構示意圖。在圖2中,先在基板10的上表面102及下表面104分別形成導電層(未在圖中表示),接著再利用半導體製程中的光罩圖案化及蝕刻步驟以移除部分導電層(未在圖中表示),使得在基板10的部分上表面102及對應各個導電柱30的上表面302上形成線路層40及同時在基板10的部分下表面104及對應於各個導電柱30的下表面304上形成球墊50。於本發明的另一實施例則是利用電鍍製程,將線路層40形成在各個導電柱30的上表面302上及將球墊50形成在基板10的部分下表面104及各個導電柱30的下表面上。
Then please refer to Figure 2. FIG. 2 is a schematic diagram showing the structure of forming a circuit layer on the upper surface of the substrate and forming a ball pad on the lower surface of the substrate. In FIG. 2, a conductive layer (not shown) is formed on the
接著請參考圖3。圖3是表示在基板的下表面的球墊上形成肋條的結構示意圖。在圖3中,在完成基板10的上表面102的線路層40之後,利用電鍍製
程,在球墊50的表面上形成凸出於球墊50表面的多個肋條502,使得球墊50由原本的平面變成凹凸結構,其中肋條502的材質與球墊50可以相同或是不同,在一較佳的實施例中,肋條502可以是銅。在本發明的一實施例中,在球墊50上的每一個肋條502的高度及寬度可以是相同尺寸或是不相同的尺寸,且肋條502可以是彼此平行或是以井字型排列的結構。
Please refer to Figure 3 next. FIG. 3 is a schematic diagram showing the structure of ribs formed on the ball pads on the lower surface of the substrate. In FIG. 3, after the
接著請參考圖4。圖4是表示在基板的上表面上依序形成防焊層、半導體元件及封裝體及在基板的下表面形成防焊層的結構示意圖。在圖4中,利用半導體製程在基板10暴露出的上表面102形成防焊層60以覆蓋住基板10的部分上表面102及部分線路層40,並且將欲與後續形成的半導體元件70電性連接的線路層40暴露出來。於基板10的上表面102形成防焊層60的同時,於基板10的下表面104也形成另一層防焊層62,且將凹凸結構的球墊50暴露出來。接著,再將半導體元件70設置在防焊層60上,其中半導體元件70可以是由多個晶片70a、70b、70c所堆疊而成的晶片堆疊結構,其晶片70a、70b、70c之間則是利用黏晶膠72b、72c來貼合,而晶片70a的下表面,也就是半導體元件70的底面與防焊層60及線路層40之間則是利用非導電膠72a貼合,接著再利用打線製程分別將晶片70a、70b、70c利用導線80a、80b、80c與未被防焊層60覆蓋的線路層40電性連接。最後再利用模封技術將封膠材料(encapsulation material)形成基板10上以形成封裝體90,並包覆在基板10的上表面102上的線路層40、防焊層60、半導體元件70及導線80a、80b、80c。
Please refer to Figure 4 next. FIG. 4 is a structural schematic view showing that a solder resist layer, a semiconductor element and a package are sequentially formed on the upper surface of the substrate, and a solder resist layer is formed on the lower surface of the substrate. In FIG. 4 , a
接著請參考圖5。圖5是表示在具有凹凸結構的球墊上形成錫球的結構示意圖。在圖5中,利用半導體製程將作為導電元件的錫球95對應形成在具有凹凸結構502的球墊50上,以完成整個球柵陣列式封裝元件。由於現有技術中,
當錫球95的球徑依據產品的需求由wBGA的0.45mm球徑縮小成0.3mm的球徑時,縮小球徑會使錫球95的與球墊50之間的接觸面積下降而使推力下降,為了改善由於縮小錫球95的球徑而造成的推力下降的缺陷,由球墊50的表面上的多個肋條502所構成的凹凸結構可以增加與錫球95之間的接觸面積,進而加強球墊50與錫球95之間的介面結合力,使得整個球柵陣列式封裝元件的抗摔落能力可以提高。
Please refer to Figure 5 next. FIG. 5 is a schematic diagram showing the structure of forming solder balls on ball pads with a concave-convex structure. In FIG. 5 ,
10:基板 10: Substrate
102:基板的上表面 102: the upper surface of the substrate
104:基板的下表面 104: the lower surface of the substrate
30:導電柱 30: Conductive column
302:導電柱的上表面 302: the upper surface of the conductive column
304:導電柱的下表面 304: the lower surface of the conductive column
40:線路層 40: Line layer
50:球墊 50: ball cushion
502:肋條 502: Ribs
Claims (8)
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| TW111103732A TWI803174B (en) | 2022-01-27 | 2022-01-27 | Ball pad applied for ball grid array package substrate and the forming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| TW111103732A TWI803174B (en) | 2022-01-27 | 2022-01-27 | Ball pad applied for ball grid array package substrate and the forming method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338117A (en) * | 1999-11-26 | 2002-02-27 | 揖斐电株式会社 | Multilayer circuit board and semiconductor device |
| TW201322837A (en) * | 2011-10-04 | 2013-06-01 | 日本特殊陶業股份有限公司 | Wiring substrate and method of manufacturing same |
| TW201324699A (en) * | 2011-10-25 | 2013-06-16 | 日本特殊陶業股份有限公司 | Wiring substrate and method of manufacturing same |
| TW201611938A (en) * | 2014-07-31 | 2016-04-01 | Nippon Steel & Sumikin Mat Co | Solder ball and electronic member |
-
2022
- 2022-01-27 TW TW111103732A patent/TWI803174B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338117A (en) * | 1999-11-26 | 2002-02-27 | 揖斐电株式会社 | Multilayer circuit board and semiconductor device |
| TW201322837A (en) * | 2011-10-04 | 2013-06-01 | 日本特殊陶業股份有限公司 | Wiring substrate and method of manufacturing same |
| TW201324699A (en) * | 2011-10-25 | 2013-06-16 | 日本特殊陶業股份有限公司 | Wiring substrate and method of manufacturing same |
| TW201611938A (en) * | 2014-07-31 | 2016-04-01 | Nippon Steel & Sumikin Mat Co | Solder ball and electronic member |
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| Publication number | Publication date |
|---|---|
| TW202332328A (en) | 2023-08-01 |
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