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TWI801111B - 具有可程式化相位增益級之低雜訊放大器 - Google Patents

具有可程式化相位增益級之低雜訊放大器 Download PDF

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Publication number
TWI801111B
TWI801111B TW111103319A TW111103319A TWI801111B TW I801111 B TWI801111 B TW I801111B TW 111103319 A TW111103319 A TW 111103319A TW 111103319 A TW111103319 A TW 111103319A TW I801111 B TWI801111 B TW I801111B
Authority
TW
Taiwan
Prior art keywords
programmable
low
noise amplifier
gain stage
phase gain
Prior art date
Application number
TW111103319A
Other languages
English (en)
Other versions
TW202230962A (zh
Inventor
俊勇 李
喬翰納斯 賈寇柏斯 艾蜜莉 瑪麗亞 哈吉雷特
約書亞 海少克 卓
Original Assignee
美商天工方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商天工方案公司 filed Critical 美商天工方案公司
Publication of TW202230962A publication Critical patent/TW202230962A/zh
Application granted granted Critical
Publication of TWI801111B publication Critical patent/TWI801111B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/213—A variable capacitor being added in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
TW111103319A 2016-08-30 2017-08-30 具有可程式化相位增益級之低雜訊放大器 TWI801111B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662381353P 2016-08-30 2016-08-30
US62/381,353 2016-08-30

Publications (2)

Publication Number Publication Date
TW202230962A TW202230962A (zh) 2022-08-01
TWI801111B true TWI801111B (zh) 2023-05-01

Family

ID=61240784

Family Applications (3)

Application Number Title Priority Date Filing Date
TW106129622A TWI756258B (zh) 2016-08-30 2017-08-30 具有可程式化相位增益級之低雜訊放大器
TW111103319A TWI801111B (zh) 2016-08-30 2017-08-30 具有可程式化相位增益級之低雜訊放大器
TW112106892A TWI874917B (zh) 2016-08-30 2017-08-30 具有可程式化相位增益級之低雜訊放大器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW106129622A TWI756258B (zh) 2016-08-30 2017-08-30 具有可程式化相位增益級之低雜訊放大器

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112106892A TWI874917B (zh) 2016-08-30 2017-08-30 具有可程式化相位增益級之低雜訊放大器

Country Status (9)

Country Link
US (3) US10476460B2 (zh)
JP (1) JP6853361B2 (zh)
KR (1) KR102505126B1 (zh)
CN (1) CN109863694B (zh)
DE (1) DE112017004372T5 (zh)
GB (1) GB2576805B (zh)
SG (1) SG11201901798PA (zh)
TW (3) TWI756258B (zh)
WO (1) WO2018044793A1 (zh)

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US10772052B2 (en) * 2017-06-16 2020-09-08 Qualcomm Incorporated Controlling coexistent radio systems in a wireless device
CN113131872A (zh) * 2019-12-31 2021-07-16 深圳市大富科技股份有限公司 一种补偿电路以及一种通信电路
US11804435B2 (en) 2020-01-03 2023-10-31 Skyworks Solutions, Inc. Semiconductor-on-insulator transistor layout for radio frequency power amplifiers
US11595008B2 (en) 2020-01-09 2023-02-28 Skyworks Solutions, Inc. Low noise amplifiers with low noise figure
US12107548B2 (en) * 2020-05-12 2024-10-01 Richwave Technology Corp. Amplifier circuit
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
US11817829B2 (en) 2021-01-29 2023-11-14 Skyworks Solutions, Inc. Multi-mode broadband low noise amplifier
JP7602177B2 (ja) * 2021-02-17 2024-12-18 株式会社ソシオネクスト 無線通信回路
US12212294B2 (en) 2021-09-24 2025-01-28 Skyworks Solutions, Inc. Low noise amplifiers with gain steps provided by bypass stage and current steering
US12244272B2 (en) * 2021-12-13 2025-03-04 Psemi Corporation Nonlinearity management in LNA bypass mode
CN114244290A (zh) * 2021-12-20 2022-03-25 上海迦美信芯通讯技术有限公司 采用多放大管阵列改善低噪声放大器线性度的电路
CN114362681A (zh) * 2022-01-07 2022-04-15 深圳昂瑞微电子技术有限公司 两级宽带低噪声高线性放大器
CN114362689A (zh) * 2022-01-07 2022-04-15 深圳昂瑞微电子技术有限公司 两级宽带高增益低噪声放大器
CN114362697A (zh) * 2022-01-07 2022-04-15 深圳昂瑞微电子技术有限公司 低噪声放大器

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US20020079971A1 (en) * 2000-12-21 2002-06-27 Philips Electronics North America Corp. Compact cascode radio frequency CMOS power amplifier
US20080297259A1 (en) * 2007-05-29 2008-12-04 Fenghao Mu Configurable, Variable Gain LNA for Multi-Band RF Receiver
TW201320587A (zh) * 2011-08-30 2013-05-16 Intel Mobile Comm Gmbh 用於改進的回退操作的一類功率放大器
US9035697B2 (en) * 2013-03-15 2015-05-19 Qualcomm Incorporated Split amplifiers with improved linearity
US20150230185A1 (en) * 2014-02-12 2015-08-13 Qualcomm Incorporated Low Noise Amplifier Device with Auxiliary Gain Control
TW201547215A (zh) * 2014-06-03 2015-12-16 Univ Nat Taiwan 射頻傳送裝置及射頻接收裝置
US9413303B2 (en) * 2012-09-23 2016-08-09 Dsp Group, Ltd. Efficient linear integrated power amplifier incorporating low and high power operating modes

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US4045747A (en) * 1976-06-25 1977-08-30 Rca Corporation Complementary field effect transistor amplifier
US20020079971A1 (en) * 2000-12-21 2002-06-27 Philips Electronics North America Corp. Compact cascode radio frequency CMOS power amplifier
US20080297259A1 (en) * 2007-05-29 2008-12-04 Fenghao Mu Configurable, Variable Gain LNA for Multi-Band RF Receiver
TW201320587A (zh) * 2011-08-30 2013-05-16 Intel Mobile Comm Gmbh 用於改進的回退操作的一類功率放大器
US9413303B2 (en) * 2012-09-23 2016-08-09 Dsp Group, Ltd. Efficient linear integrated power amplifier incorporating low and high power operating modes
US9035697B2 (en) * 2013-03-15 2015-05-19 Qualcomm Incorporated Split amplifiers with improved linearity
US20150230185A1 (en) * 2014-02-12 2015-08-13 Qualcomm Incorporated Low Noise Amplifier Device with Auxiliary Gain Control
TW201547215A (zh) * 2014-06-03 2015-12-16 Univ Nat Taiwan 射頻傳送裝置及射頻接收裝置

Also Published As

Publication number Publication date
SG11201901798PA (en) 2019-03-28
JP2019532595A (ja) 2019-11-07
GB2576805B (en) 2022-06-15
US11183984B2 (en) 2021-11-23
TW202230962A (zh) 2022-08-01
TWI756258B (zh) 2022-03-01
DE112017004372T5 (de) 2019-05-09
TW201824737A (zh) 2018-07-01
CN109863694B (zh) 2023-08-08
US20200153403A1 (en) 2020-05-14
TW202324910A (zh) 2023-06-16
US20220158599A1 (en) 2022-05-19
US20180062599A1 (en) 2018-03-01
GB2576805A (en) 2020-03-04
KR20190047709A (ko) 2019-05-08
TWI874917B (zh) 2025-03-01
WO2018044793A1 (en) 2018-03-08
KR102505126B1 (ko) 2023-03-02
CN109863694A (zh) 2019-06-07
US10476460B2 (en) 2019-11-12
JP6853361B2 (ja) 2021-03-31
GB201904331D0 (en) 2019-05-15

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