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TWI800988B - 半導體記憶體裝置 - Google Patents

半導體記憶體裝置 Download PDF

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Publication number
TWI800988B
TWI800988B TW110142850A TW110142850A TWI800988B TW I800988 B TWI800988 B TW I800988B TW 110142850 A TW110142850 A TW 110142850A TW 110142850 A TW110142850 A TW 110142850A TW I800988 B TWI800988 B TW I800988B
Authority
TW
Taiwan
Prior art keywords
semiconductor memory
memory devices
devices
semiconductor
memory
Prior art date
Application number
TW110142850A
Other languages
English (en)
Other versions
TW202240854A (zh
Inventor
李炅奐
金容錫
金一權
金熙中
趙珉熙
弘載昊
Original Assignee
南韓商三星電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商三星電子股份有限公司 filed Critical 南韓商三星電子股份有限公司
Publication of TW202240854A publication Critical patent/TW202240854A/zh
Application granted granted Critical
Publication of TWI800988B publication Critical patent/TWI800988B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10P14/3434—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
TW110142850A 2020-12-22 2021-11-18 半導體記憶體裝置 TWI800988B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0180502 2020-12-22
KR1020200180502A KR102838565B1 (ko) 2020-12-22 2020-12-22 반도체 메모리 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW202240854A TW202240854A (zh) 2022-10-16
TWI800988B true TWI800988B (zh) 2023-05-01

Family

ID=82022884

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110142850A TWI800988B (zh) 2020-12-22 2021-11-18 半導體記憶體裝置

Country Status (4)

Country Link
US (1) US11903184B2 (zh)
KR (1) KR102838565B1 (zh)
CN (1) CN114664830A (zh)
TW (1) TWI800988B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230046013A (ko) * 2021-09-29 2023-04-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20230133149A (ko) * 2022-03-10 2023-09-19 삼성전자주식회사 반도체 메모리 소자
CN117915653B (zh) * 2022-10-10 2025-01-10 长鑫存储技术有限公司 存储单元结构及其制备方法、读写电路及存储器
US12446230B2 (en) * 2022-10-19 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric memory device and memory array
KR20240139288A (ko) * 2023-03-14 2024-09-23 삼성전자주식회사 반도체 장치
KR20250024369A (ko) * 2023-08-11 2025-02-18 삼성전자주식회사 반도체 메모리 장치
JP2025041411A (ja) * 2023-09-13 2025-03-26 キオクシア株式会社 半導体装置及び半導体記憶装置
TWI871774B (zh) * 2023-09-15 2025-02-01 南亞科技股份有限公司 半導體記憶體裝置製造方法
JP2025045921A (ja) * 2023-09-20 2025-04-02 キオクシア株式会社 半導体記憶装置
KR102849340B1 (ko) * 2023-11-09 2025-08-21 한양대학교 산학협력단 수직 채널 트랜지스터를 갖는 디램
US20250194167A1 (en) * 2023-12-07 2025-06-12 Nanya Technology Corporation Memory device having improved p-n junction and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014084006A1 (ja) * 2012-11-27 2014-06-05 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US20180138282A1 (en) * 2015-02-13 2018-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
US20190393222A1 (en) * 2018-06-20 2019-12-26 Intel Corporation 4f2 dram cell using vertical thin film transistor
CN111863814A (zh) * 2019-04-24 2020-10-30 王振志 动态随机存取存储器元件及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969154B2 (en) * 2011-08-23 2015-03-03 Micron Technology, Inc. Methods for fabricating semiconductor device structures and arrays of vertical transistor devices
JP2013058676A (ja) * 2011-09-09 2013-03-28 Elpida Memory Inc 半導体装置及びその製造方法、並びにデータ処理システム
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP6538598B2 (ja) 2016-03-16 2019-07-03 株式会社東芝 トランジスタ及び半導体記憶装置
US10714400B2 (en) 2017-08-30 2020-07-14 Micron Technology, Inc. Methods of forming semiconductor structures comprising thin film transistors including oxide semiconductors
JP7051511B2 (ja) 2018-03-21 2022-04-11 キオクシア株式会社 半導体装置及びその製造方法
US11264512B2 (en) 2018-06-29 2022-03-01 Intel Corporation Thin film transistors having U-shaped features
US11538808B2 (en) 2018-09-07 2022-12-27 Intel Corporation Structures and methods for memory cells
WO2020076766A1 (en) * 2018-10-09 2020-04-16 Micron Technology, Inc. Methods of forming a device, and related devices and electronic systems
US11849572B2 (en) 2019-01-14 2023-12-19 Intel Corporation 3D 1T1C stacked DRAM structure and method to fabricate
US11469251B2 (en) * 2019-05-15 2022-10-11 Sandisk Technologies Llc Memory device using a multilayer ferroelectric stack and method of forming the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014084006A1 (ja) * 2012-11-27 2014-06-05 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US20180138282A1 (en) * 2015-02-13 2018-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
US20200075742A1 (en) * 2015-02-13 2020-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
US20190393222A1 (en) * 2018-06-20 2019-12-26 Intel Corporation 4f2 dram cell using vertical thin film transistor
CN111863814A (zh) * 2019-04-24 2020-10-30 王振志 动态随机存取存储器元件及其制造方法

Also Published As

Publication number Publication date
KR102838565B1 (ko) 2025-07-24
US11903184B2 (en) 2024-02-13
TW202240854A (zh) 2022-10-16
CN114664830A (zh) 2022-06-24
KR20220089875A (ko) 2022-06-29
US20220199625A1 (en) 2022-06-23

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