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TWI800775B - 用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構 - Google Patents

用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構 Download PDF

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Publication number
TWI800775B
TWI800775B TW109143038A TW109143038A TWI800775B TW I800775 B TWI800775 B TW I800775B TW 109143038 A TW109143038 A TW 109143038A TW 109143038 A TW109143038 A TW 109143038A TW I800775 B TWI800775 B TW I800775B
Authority
TW
Taiwan
Prior art keywords
dti
image sensor
trench isolation
cmos image
deep trench
Prior art date
Application number
TW109143038A
Other languages
English (en)
Other versions
TW202133422A (zh
Inventor
輝 臧
剛 陳
Original Assignee
美商豪威科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商豪威科技股份有限公司 filed Critical 美商豪威科技股份有限公司
Publication of TW202133422A publication Critical patent/TW202133422A/zh
Application granted granted Critical
Publication of TWI800775B publication Critical patent/TWI800775B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
TW109143038A 2019-12-19 2020-12-07 用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構 TWI800775B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/720,236 US11244979B2 (en) 2019-12-19 2019-12-19 Deep trench isolation (DTI) structure for CMOS image sensor
US16/720,236 2019-12-19

Publications (2)

Publication Number Publication Date
TW202133422A TW202133422A (zh) 2021-09-01
TWI800775B true TWI800775B (zh) 2023-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW109143038A TWI800775B (zh) 2019-12-19 2020-12-07 用於ｃｍｏｓ影像感測器之深溝槽隔離（ｄｔｉ）結構

Country Status (3)

Country Link
US (1) US11244979B2 (zh)
CN (1) CN113013185A (zh)
TW (1) TWI800775B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102749546B1 (ko) * 2020-03-04 2025-01-03 에스케이하이닉스 주식회사 이미지 센서
US11862654B2 (en) * 2021-01-15 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Trench isolation structure for image sensors
CN113629083A (zh) * 2021-07-19 2021-11-09 联合微电子中心有限责任公司 遮光结构、图像传感器及图像传感器的制备方法
KR20230017405A (ko) 2021-07-27 2023-02-06 삼성전자주식회사 이미지 센서
CN113823652B (zh) * 2021-09-17 2023-09-01 联合微电子中心有限责任公司 带有pdaf功能的cmos图像传感器
CN114023776B (zh) * 2021-11-05 2024-10-15 武汉新芯集成电路股份有限公司 光电传感器及其制作方法
US20230230993A1 (en) * 2022-01-20 2023-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Uniform trenches in semiconductor devices and manufacturing method thereof
US12408448B2 (en) * 2022-06-13 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure and methods for fabrication thereof
US20240088187A1 (en) * 2022-09-12 2024-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure for high resolution cis pixel
CN116417487A (zh) * 2023-06-09 2023-07-11 湖北江城芯片中试服务有限公司 一种半导体结构的形成方法和半导体结构
CN117423714B (zh) * 2023-12-18 2024-04-05 合肥晶合集成电路股份有限公司 半导体结构的制备方法及半导体结构
CN121076007A (zh) * 2025-10-31 2025-12-05 合肥晶合集成电路股份有限公司 一种半导体结构的制作方法、半导体结构及图像传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120217601A1 (en) * 2011-02-24 2012-08-30 Sony Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
US20150243805A1 (en) * 2014-02-27 2015-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
TW201916336A (zh) * 2017-09-29 2019-04-16 台灣積體電路製造股份有限公司 影像感測器和影像感測器製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6003316B2 (ja) * 2012-07-12 2016-10-05 ソニー株式会社 固体撮像装置、電子機器
JP6065448B2 (ja) * 2012-08-03 2017-01-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015106621A (ja) * 2013-11-29 2015-06-08 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
KR102410019B1 (ko) * 2015-01-08 2022-06-16 삼성전자주식회사 이미지 센서
US9686457B2 (en) * 2015-09-11 2017-06-20 Semiconductor Components Industries, Llc High efficiency image sensor pixels with deep trench isolation structures and embedded reflectors
JP2017108062A (ja) * 2015-12-11 2017-06-15 ソニー株式会社 固体撮像素子、撮像装置、および、固体撮像素子の製造方法
US10181490B2 (en) 2017-04-03 2019-01-15 Omnivision Technologies, Inc. Cross talk reduction for high dynamic range image sensors
US11075242B2 (en) * 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
US10461109B2 (en) * 2017-11-27 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple deep trench isolation (MDTI) structure for CMOS image sensor
JP2019134229A (ja) * 2018-01-29 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
KR102771720B1 (ko) * 2019-07-12 2025-02-24 에스케이하이닉스 주식회사 이미지 센서

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120217601A1 (en) * 2011-02-24 2012-08-30 Sony Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
US20150243805A1 (en) * 2014-02-27 2015-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the same
TW201916336A (zh) * 2017-09-29 2019-04-16 台灣積體電路製造股份有限公司 影像感測器和影像感測器製造方法

Also Published As

Publication number Publication date
US20210193702A1 (en) 2021-06-24
TW202133422A (zh) 2021-09-01
CN113013185A (zh) 2021-06-22
US11244979B2 (en) 2022-02-08

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