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TWI800505B - Applying power to electrodes of plasma reactor - Google Patents

Applying power to electrodes of plasma reactor Download PDF

Info

Publication number
TWI800505B
TWI800505B TW107111435A TW107111435A TWI800505B TW I800505 B TWI800505 B TW I800505B TW 107111435 A TW107111435 A TW 107111435A TW 107111435 A TW107111435 A TW 107111435A TW I800505 B TWI800505 B TW I800505B
Authority
TW
Taiwan
Prior art keywords
electrodes
plasma reactor
applying power
applying
power
Prior art date
Application number
TW107111435A
Other languages
Chinese (zh)
Other versions
TW201907045A (en
Inventor
肯尼士Ｓ 柯林斯
卡提克 拉馬斯瓦米
郭岳
沙西德 羅夫
卡羅 貝拉
詹姆士Ｄ 卡度希
麥可R 萊斯
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201907045A publication Critical patent/TW201907045A/en
Application granted granted Critical
Publication of TWI800505B publication Critical patent/TWI800505B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW107111435A 2017-04-24 2018-03-31 Applying power to electrodes of plasma reactor TWI800505B (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201762489344P 2017-04-24 2017-04-24
US62/489,344 2017-04-24
US201762523759P 2017-06-22 2017-06-22
US201762523761P 2017-06-22 2017-06-22
US201762523763P 2017-06-22 2017-06-22
US62/523,759 2017-06-22
US62/523,763 2017-06-22
US62/523,761 2017-06-22

Publications (2)

Publication Number Publication Date
TW201907045A TW201907045A (en) 2019-02-16
TWI800505B true TWI800505B (en) 2023-05-01

Family

ID=63920395

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107111435A TWI800505B (en) 2017-04-24 2018-03-31 Applying power to electrodes of plasma reactor

Country Status (5)

Country Link
JP (1) JP7098654B2 (en)
KR (1) KR102501096B1 (en)
CN (1) CN110603621A (en)
TW (1) TWI800505B (en)
WO (1) WO2018200409A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102896968B1 (en) * 2021-08-26 2025-12-09 세메스 주식회사 Substrate treating apparatus
US12106938B2 (en) * 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP7431210B2 (en) * 2021-12-28 2024-02-14 株式会社Kokusai Electric Substrate processing equipment, plasma generation equipment, semiconductor device manufacturing method, plasma generation method and program
KR20250162638A (en) * 2024-05-09 2025-11-19 삼성디스플레이 주식회사 Electrostatic chuck

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6161499A (en) * 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3907087B2 (en) * 1996-10-28 2007-04-18 キヤノンアネルバ株式会社 Plasma processing equipment
JP3501668B2 (en) * 1997-12-10 2004-03-02 キヤノン株式会社 Plasma CVD method and plasma CVD apparatus
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP2004055600A (en) * 2002-07-16 2004-02-19 Tokyo Electron Ltd Plasma processing apparatus
JP2004128159A (en) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd Device and method for producing high frequency plasma
JP3902113B2 (en) * 2002-10-31 2007-04-04 三菱重工業株式会社 Plasma chemical vapor deposition method
US8293069B2 (en) * 2004-03-15 2012-10-23 Sungkyunkwan University Inductively coupled plasma apparatus
JP4634138B2 (en) * 2004-12-27 2011-02-16 日本碍子株式会社 Plasma generating electrode and plasma reactor
US20070031609A1 (en) * 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
JP2008016476A (en) * 2006-07-03 2008-01-24 Hitachi Kokusai Electric Inc Semiconductor manufacturing equipment
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
KR100994502B1 (en) * 2008-12-10 2010-11-15 엘아이지에이디피 주식회사 Plasma treatment apparatus and method
KR101552726B1 (en) * 2009-02-04 2015-09-11 엘지전자 주식회사 Plasma enhanced chemical vapor deposition apparatus
JP2014049541A (en) * 2012-08-30 2014-03-17 Mitsubishi Heavy Ind Ltd Thin film manufacturing device and electrode voltage regulating method thereof
US10153133B2 (en) * 2015-03-23 2018-12-11 Applied Materials, Inc. Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6161499A (en) * 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma

Also Published As

Publication number Publication date
KR20190134810A (en) 2019-12-04
KR102501096B1 (en) 2023-02-17
JP2020521270A (en) 2020-07-16
TW201907045A (en) 2019-02-16
CN110603621A (en) 2019-12-20
JP7098654B2 (en) 2022-07-11
WO2018200409A1 (en) 2018-11-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees