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TWI800363B - Semiconductor structure and manufacturing method thereof - Google Patents

Semiconductor structure and manufacturing method thereof Download PDF

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Publication number
TWI800363B
TWI800363B TW111115936A TW111115936A TWI800363B TW I800363 B TWI800363 B TW I800363B TW 111115936 A TW111115936 A TW 111115936A TW 111115936 A TW111115936 A TW 111115936A TW I800363 B TWI800363 B TW I800363B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor structure
semiconductor
Prior art date
Application number
TW111115936A
Other languages
Chinese (zh)
Other versions
TW202343791A (en
Inventor
陳柏安
Original Assignee
新唐科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新唐科技股份有限公司 filed Critical 新唐科技股份有限公司
Priority to TW111115936A priority Critical patent/TWI800363B/en
Priority to CN202211083313.9A priority patent/CN117012815A/en
Application granted granted Critical
Publication of TWI800363B publication Critical patent/TWI800363B/en
Publication of TW202343791A publication Critical patent/TW202343791A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
TW111115936A 2022-04-27 2022-04-27 Semiconductor structure and manufacturing method thereof TWI800363B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW111115936A TWI800363B (en) 2022-04-27 2022-04-27 Semiconductor structure and manufacturing method thereof
CN202211083313.9A CN117012815A (en) 2022-04-27 2022-09-06 Semiconductor structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111115936A TWI800363B (en) 2022-04-27 2022-04-27 Semiconductor structure and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI800363B true TWI800363B (en) 2023-04-21
TW202343791A TW202343791A (en) 2023-11-01

Family

ID=86948996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111115936A TWI800363B (en) 2022-04-27 2022-04-27 Semiconductor structure and manufacturing method thereof

Country Status (2)

Country Link
CN (1) CN117012815A (en)
TW (1) TWI800363B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI405332B (en) * 2010-03-10 2013-08-11 Macronix Int Co Ltd Junction field effect transistor component
TWI748301B (en) * 2019-12-09 2021-12-01 新唐科技股份有限公司 Junction field effect transistor and method for fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI405332B (en) * 2010-03-10 2013-08-11 Macronix Int Co Ltd Junction field effect transistor component
TWI748301B (en) * 2019-12-09 2021-12-01 新唐科技股份有限公司 Junction field effect transistor and method for fabricating the same

Also Published As

Publication number Publication date
TW202343791A (en) 2023-11-01
CN117012815A (en) 2023-11-07

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