TWI899357B - Method and system for controlling a laser repair process of electronic circuits - Google Patents
Method and system for controlling a laser repair process of electronic circuitsInfo
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- TWI899357B TWI899357B TW110139220A TW110139220A TWI899357B TW I899357 B TWI899357 B TW I899357B TW 110139220 A TW110139220 A TW 110139220A TW 110139220 A TW110139220 A TW 110139220A TW I899357 B TWI899357 B TW I899357B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/705—Beam measuring device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
- G01N21/643—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" non-biological material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/718—Laser microanalysis, i.e. with formation of sample plasma
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
- G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
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- Plasma & Fusion (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Laser Beam Processing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本發明大體上係關於電子產品之生產,且特定言之,本發明係關於用於控制電子電路之一雷射修復處理。 The present invention generally relates to the production of electronic products, and more particularly, to a laser repair process for controlling electronic circuits.
已開發用於控制程序之各種技術,諸如電子電路之基於雷射之修復。 Various techniques have been developed for control processes such as laser-based repair of electronic circuits.
例如,美國專利公開申請案2005/0226287描述一種具有一飛秒雷射、頻率轉換光學器件、光束操縱光學器件、目標運動控制、處理室、診斷系統及系統控制模組之雷射處理系統。雷射處理系統允許在微加工中利用獨特熱控制,且系統具有更大輸出光束穩定性、連續可變重複速率及獨特時間光束塑形能力。 For example, U.S. Patent Publication No. 2005/0226287 describes a laser processing system comprising a femtosecond laser, frequency conversion optics, beam steering optics, target motion control, a processing chamber, a diagnostic system, and a system control module. The laser processing system allows for unique thermal control in micromachining and features greater output beam stability, continuously variable repetition rates, and unique temporal beam shaping capabilities.
美國專利公開申請案2007/0092128描述一種用於自動檢驗及修復印刷電路板之裝置及方法,其包含自動檢驗印刷電路板之一檢驗功能性,及提供其上需要修復之區域之一機器可讀指示。一自動修復功能性採用機器可讀指示來修復其上需要修復之一些區域處之印刷電路板。一自動修復重組功能性在一初始自動修復操作之後自動重新檢驗印刷電路板,且將其上需要修復之區域之一重組機器可讀指示提供至自動修復功能性。 U.S. Patent Application Publication No. 2007/0092128 describes an apparatus and method for automatically inspecting and repairing printed circuit boards, including an inspection functionality for automatically inspecting the printed circuit board and providing a machine-readable indication of areas requiring repair. An automatic repair functionality uses the machine-readable indication to repair the printed circuit board at areas requiring repair. An automatic repair and reconfiguration functionality automatically re-inspects the printed circuit board after an initial automatic repair operation and provides the automatic repair functionality with a reconfiguration machine-readable indication of areas requiring repair.
本文所描述之本發明之一實施例提供一種包含引導一雷射光束撞擊於一基板之一區段上以移除形成於該區段上之一層之方法。自回應於該撞擊雷射光束而自該區段發射之光偵測指示自該層移除之層材料之至少一光譜組件。基於偵測到之光譜組件,控制或停止該雷射光束撞擊於該區段上。 One embodiment of the invention described herein provides a method comprising directing a laser beam to impinge on a section of a substrate to remove a layer formed on the section. Light emitted from the section in response to the impinging laser beam is detected by at least one optical component indicating the layer material removed from the layer. Based on the detected optical component, the laser beam is controlled or stopped from impinging on the section.
在一些實施例中,引導該雷射光束包含引導一脈衝雷射光束。在其他實施例中,該基板包含具有一層壓板之一印刷電路板(PCB)且該層包含一銅缺陷。在又一其他實施例中,該方法包含自該區段發射之該光偵測一額外光譜組件,其指示自該基板移除之基板材料。 In some embodiments, directing the laser beam includes directing a pulsed laser beam. In other embodiments, the substrate includes a printed circuit board (PCB) having a laminate layer, and the laminate layer includes a copper defect. In still other embodiments, the method includes detecting an additional spectral component of the light emitted from the segment that indicates substrate material removed from the substrate.
在一實施例中,控制或停止該雷射光束包含基於該光譜組件及該額外光譜組件兩者而設定一停止時間。在另一實施例中,回應於偵測到該光譜組件及該額外光譜組件兩者均高於一預界定臨限值以重新引導該雷射光束以撞擊於該區段內之該層上。 In one embodiment, controlling or stopping the laser beam includes setting a dwell time based on both the optical component and the additional optical component. In another embodiment, the laser beam is redirected to impinge on the layer within the segment in response to detecting that both the optical component and the additional optical component are above a predetermined threshold.
在一些實施例中,控制或停止該雷射光束包含執行選自由以下組成之一操作列表之至少一個操作:(i)阻擋該雷射光束、(ii)關斷該雷射光束及(iii)將該雷射光束引導至該基板之一後續區段。在其他實施例中,偵測至少該光譜組件包含偵測選自由以下組成之一光譜發射列表之一個或多個光譜發射:(a)螢光、(b)電漿、(c)拉曼(Raman)、(d)紅外熱輻射及(e)雷射誘導崩潰光譜法(LIBS)。 In some embodiments, controlling or stopping the laser beam includes performing at least one operation selected from a list consisting of: (i) blocking the laser beam, (ii) shutting off the laser beam, and (iii) directing the laser beam to a subsequent section of the substrate. In other embodiments, detecting at least the optical component includes detecting one or more optical emissions selected from a list consisting of: (a) fluorescence, (b) plasma, (c) Raman, (d) infrared thermal radiation, and (e) laser-induced avalanche spectroscopy (LIBS).
根據本發明之一實施例,額外提供一種系統,其包含一光學總成、一偵測總成及一處理器。該光學總成經組態以引導一雷射光束撞擊於一基板之一區段上,且該雷射光束經組態以移除形成於該區段上之一 層。該偵測總成經組態以自回應於該撞擊雷射光束而自該區段發射之一光偵測指示自該層移除之層材料之一光譜組件。該處理器經組態以基於偵測到之光譜組件而控制或停止該雷射光束撞擊於該區段上。 According to one embodiment of the present invention, a system is further provided that includes an optical assembly, a detection assembly, and a processor. The optical assembly is configured to direct a laser beam to impinge on a section of a substrate, and the laser beam is configured to remove a layer formed on the section. The detection assembly is configured to detect a spectral component indicating layer material removed from the section through light emitted from the section in response to the impinging laser beam. The processor is configured to control or stop the laser beam from impinging on the section based on the detected spectral component.
在一些實施例中,該光學總成包含一聲光調變器(AOM)、一掃描鏡及聚焦光學器件之至少一者。 In some embodiments, the optical assembly includes at least one of an acousto-optic modulator (AOM), a scanning lens, and focusing optics.
將自本發明之實施例之以下詳細描述結合圖式更完全理解本發明,其中: The present invention will be more fully understood from the following detailed description of the embodiments of the present invention in conjunction with the drawings, wherein:
11:系統 11: System
12:雷射 12: Laser
13:光學總成 13: Optical assembly
14:光學器件 14: Optical devices
15:光束分離器(BS) 15: Beam Splitter (BS)
16:聲光調變器(AOM) 16: Acousto-Optical Modulator (AOM)
17:缺陷 17: Defects
18:掃描器 18: Scanner
19:插圖 19: Illustration
20:攝影機總成(CA) 20: Camera Assembly (CA)
21:樣本 21: Sample
22:層 22: Layer
23:基板 23:Substrate
24:聚焦光學器件 24: Focusing Optics
25:光束 25: Beam
28:光束 28: Beam
29:光束分離器(BS) 29: Beam Splitter (BS)
30:光束 30: Beam
32:光束 32: Beam
33:處理器 33: Processor
34:偵測總成(DA) 34: Detection Assembly (DA)
35:偵測器 35: Detector
36:光學器件 36: Optical devices
37:濾波器 37: Filter
40:電纜 40: Cable
44:偵測總成(DA) 44: Detection Assembly (DA)
45:偵測器 45: Detector
46:光學器件/控制器 46: Optical Devices/Controllers
47:濾波器 47: Filter
48:控制器 48: Controller
70:圖表 70: Charts
72:銅光譜組件 72: Copper Spectrum Components
74:雜訊 74: Noise
76:雙頭軸 76: Double-ended shaft
78:標記 78:Mark
79:標記 79: Marker
80:圖表 80: Charts
82:銅光譜組件 82: Copper Spectrum Components
84:雜訊 84: Noise
86:雙頭軸 86: Double-ended shaft
88:標記 88:Mark
89:標記 89: Marker
90:圖表 90: Charts
92:銅光譜組件 92: Copper Spectrum Components
94:雜訊 94: Noise
96:雙頭軸 96: Double-ended shaft
98:標記 98:Mark
99:標記 99:Mark
100:步驟 100: Steps
102:步驟 102: Step
104:步驟 104: Step
106:步驟 106: Step
圖1係根據本發明之一實施例之用於利用雷射修復電子電路之一系統之一方塊圖;圖2A、圖2B及圖2C係展示根據本發明之一實施例之指示自一基板移除之銅之發射光之光譜組件之圖表;及圖3係示意性地繪示根據本發明之一實施例之用於控制使用在一程序期間自一缺陷發射之光之光譜組件自電子電路移除缺陷之程序之一方法之一流程圖。 FIG1 is a block diagram of a system for repairing electronic circuits using lasers according to an embodiment of the present invention; FIG2A, FIG2B, and FIG2C are diagrams showing a spectroscopic component for emitting light to indicate copper removal from a substrate according to an embodiment of the present invention; and FIG3 is a flow chart schematically illustrating a method for controlling a process for removing defects from electronic circuits using a spectroscopic component for emitting light from a defect during a process according to an embodiment of the present invention.
概述 Overview
有時,在(諸如)一印刷電路板(PCB)中之一電子組件或模組之一製造程序期間,可出現各種類型之缺陷。例如,當在PCB之一層壓板上形成銅跡線之一圖案時,包括非所要銅層之一缺陷可出現在銅跡線之間。重要的係在不損壞通常在銅下面之層壓板之情況中移除缺陷以維持PCB之功能性。 Sometimes, during the manufacturing process of an electronic component or module, such as in a printed circuit board (PCB), various types of defects can occur. For example, when forming a pattern of copper traces on a laminate of a PCB, a defect involving an undesirable copper layer can occur between the copper traces. It is important to remove the defect without damaging the laminate, typically underneath, to maintain the functionality of the PCB.
下文所描述之本發明之實施例提供用於藉由移除PCB之製造期間發生之缺陷來修復一電子模組(諸如一PCB)之改良技術。例如,移除包括在形成於PCB之一層壓板上之一設計銅圖案之跡線之間形成之非所要銅層之一缺陷。 The embodiments of the present invention described below provide improved techniques for repairing an electronic module, such as a PCB, by removing defects that occur during the PCB's manufacturing process. For example, the removal of a defect includes an undesirable copper layer formed between traces of a designed copper pattern formed on a laminate of the PCB.
原則上,可使用燒蝕缺陷之一部分之一反覆程序自PCB之一區段移除缺陷,其後接著檢驗該區段,且重複該程序直至移除整個缺陷。此反覆程序降低損壞PCB層壓板之風險,然而,各檢驗步驟消耗時間且減少缺陷移除程序之處理量。 In principle, defects can be removed from a section of the PCB using an iterative process of etching out a portion of the defect, then inspecting the section and repeating the process until the entire defect is removed. This iterative process reduces the risk of damaging the PCB laminate; however, each inspection step is time-consuming and reduces the throughput of the defect removal process.
在一些實施例中,一種用於藉由使用雷射燒蝕移除缺陷來修復PCB之系統包括一光學總成、一個或多個偵測總成及一處理器。該光學總成經組態以引導一雷射光束撞擊於PCB基板之一區段上。該雷射光束經組態以使用該衝擊雷射光束燒蝕非所要或過量銅層以移除形成於區段上之缺陷。在本發明之上下文中及申請專利範圍中,術語「銅層」係指任何種類之非所要銅缺陷,諸如(但不限於)過量銅區段、或銅剩餘、或銅飛濺、或一過量銅圖案、或一分離銅缺陷、或銅與一異物之一組合,或包括銅之任何其他種類之缺陷。 In some embodiments, a system for repairing a PCB by removing defects using laser ablation includes an optical assembly, one or more detection assemblies, and a processor. The optical assembly is configured to direct a laser beam to impinge on a section of a PCB substrate. The laser beam is configured to remove defects formed on the section by ablating unwanted or excess copper using the impact laser beam. In the context of the present invention and the scope of the patent application, the term "copper layer" refers to any type of undesirable copper defect, such as (but not limited to) an excess copper region, or a copper residue, or a copper splash, or an excess copper pattern, or a separate copper defect, or a combination of copper and a foreign substance, or any other type of defect including copper.
在一些實施例中,一個或多個偵測總成經組態以自回應於撞擊雷射光束而自區段感應及發射之一光偵測指示自缺陷移除之銅之一光譜組件。 In some embodiments, one or more detection assemblies are configured to sense and emit light from the segment in response to an impinging laser beam to detect a spectroscopic component indicative of copper removed from the defect.
應注意雷射光束與缺陷之過量銅之間的交互作用在區段處感應自缺陷發射之光。因此,在本發明之上下文中及申請專利範圍中,術語「發射光」係指回應撞擊銅上之雷射光束而感應之光,使得感應光自燒蝕銅發射。 It should be noted that the interaction between the laser beam and the excess copper in the defect induces light emission from the defect at that section. Therefore, in the context of the present invention and the scope of the patent application, the term "emitted light" refers to light induced in response to the laser beam impinging on the copper, such that the induced light is emitted from the ablated copper.
再者,在本發明之上下文中及申請專利範圍中,術語「光譜組件」係指所關注之待偵測之銅及/或其他元件之一個或多個光譜線。例如,銅之光譜組件可包括具有約5700埃(A)、約5782A、約6000A及約6150A之波長或任何其他適合波長之以下光譜線之一或多者。 Furthermore, in the context of the present invention and the scope of the patent application, the term "spectral component" refers to one or more spectral lines of the copper and/or other components of interest to be detected. For example, the spectral component of copper may include one or more of the following spectral lines having wavelengths of approximately 5700 angstroms (Å), approximately 5782 Å, approximately 6000 Å, and approximately 6150 Å, or any other suitable wavelength.
術語光譜組件亦可係指由層壓板或任何其他所關注之材料發射之光譜組件。 The term optical component may also refer to optical components emitted by a laminate or any other material of interest.
應注意光譜組件構成PCB之基板上之銅缺陷之存在及用於移除非所要銅缺陷之燒蝕程序之一指紋。 Attention should be paid to the presence of copper defects on the substrate of the PCB that forms the optical component and to the fingerprint of the etching process used to remove the undesirable copper defects.
在一些實施例中,使用所揭示之技術來移除缺陷具有若干優點,諸如(但不限於):(a)缺陷識別-偵測燒蝕期間發射之一個或多個光譜組件指示缺陷存在,且獨立於可(例如)歸因於幾何因素(諸如表面粗糙度或缺陷之形狀)而變動之偵測到之信號之強度,(b)準確空間監測-相同雷射光束用於燒蝕及感應光之發射及偵測到之光譜組件兩者,因此,可不發生光學瞄準線誤差且偵測到之光譜組件係自被燒蝕之實際位置發射,及(c)即時指示及控制-偵測總成即時接收回應於撞擊至具有缺陷之區段之雷射光束之各脈衝而發射之一個或多個光譜組件,因此,達成即時控制及調整燒蝕程序,其在本文詳細描述。 In some embodiments, using the disclosed techniques to remove defects has several advantages, such as, but not limited to: (a) defect identification - detecting one or more spectral components emitted during ablation indicates the presence of a defect, independent of the intensity of the detected signal which may vary, for example, due to geometric factors such as surface roughness or the shape of the defect, (b) accurate spatial monitoring - the same laser beam is used for ablation and (c) Real-time indication and control - the detection assembly receives one or more optical spectroscopic components in response to each pulse of the laser beam that strikes the defective section, thereby achieving real-time control and adjustment of the ablation process, which is described in detail herein.
在一些實施例中,處理器經組態以控制雷射光束(例如)以降低雷射功率及/或改變掃描速率,及/或調整光束輪廓及/或光斑大小及/或控制雷射光束之任何其他適合參數。 In some embodiments, the processor is configured to control the laser beam, for example, to reduce laser power and/or change the scan rate, and/or adjust the beam profile and/or spot size and/or any other suitable parameter of the laser beam.
在其他實施例中,處理器經組態以:(i)基於偵測到之光譜組件而設定雷射光束之一停止時間,且隨後或同時,(ii)在所設定之停止時間停止雷射光束撞擊於區段上。在本發明之上下文中及申請專利範圍 中,術語停止時間在本文中亦指稱燒蝕銅缺陷之「終點」。 In other embodiments, the processor is configured to: (i) set a dwell time for the laser beam based on the detected spectral component and, subsequently or simultaneously, (ii) stop the laser beam from impinging on the segment at the set dwell time. In the context of the present invention and the scope of the claims, the term dwell time also refers to the "end point" of the etched copper defect.
在一些實施例中,光學總成可包括一聲光調變器(AOM),其經組態以:(a)阻擋或通過(開/關)雷射光束到達PCB,(b)控制雷射光束之強度,及(c)控制通過AOM及撞擊PCB之表面之雷射光束之脈衝數。 In some embodiments, the optical assembly may include an acousto-optic modulator (AOM) configured to: (a) block or pass (turn on/off) the laser beam from reaching the PCB, (b) control the intensity of the laser beam, and (c) control the number of pulses of the laser beam that pass through the AOM and strike the surface of the PCB.
在一些實施例中,處理器經組態以藉由控制AOM或光學總成之其他組件來停止雷射光束撞擊於PCB區段之表面上。 In some embodiments, the processor is configured to stop the laser beam from impinging on the surface of the PCB section by controlling the AOM or other components of the optical assembly.
在一些實施例中,(i)偵測總成可包括經組態用於自發射光偵測之快速光譜儀、至少一個額外光譜組件,及/或(ii)系統可包括一個或多個額外偵測總成。偵測總成(例如快速光譜儀)及/或一個或多個額外偵測總成經組態以自燒蝕程序期間感應及發射之光偵測指示燒蝕期間自PCB區段移除之基板材料(例如層壓板)之一額外光譜組件。 In some embodiments, (i) the detection assembly may include a fast spectrometer configured for self-emitted light detection, at least one additional spectroscopic component, and/or (ii) the system may include one or more additional detection assemblies. The detection assembly (e.g., a fast spectrometer) and/or the one or more additional detection assemblies are configured to sense and emit light during the ablation process to detect substrate material (e.g., a laminate) removed from the PCB section during the ablation process.
在一些實施例中,回應於自額外偵測總成接收指示層壓光譜組件之一信號,處理器經組態以基於層壓光譜組件而設定停止點。 In some embodiments, in response to receiving a signal from the additional detection assembly indicating a laminar pressure spectroscopy component, the processor is configured to set a stopping point based on the laminar pressure spectroscopy component.
在一些實施例中,系統可包括一攝影機總成,其經組態以在燒蝕之前獲取PCB區段之影像(例如)用於將雷射光束準確引導至缺陷,及/或在燒蝕之後,(例如)用於驗證整個缺陷已被移除且層壓板未發生損壞。 In some embodiments, the system may include a camera assembly configured to acquire images of the PCB section before ablation, for example, to accurately direct the laser beam to the defect, and/or after ablation, for example, to verify that the entire defect has been removed and that no damage has occurred to the laminate.
在一些實施例中,在結束自區段之缺陷移除之後,處理器經組態以相對於光學總成移動PCB以定位光學總成以移除位於PCB之一後續區段之一後續缺陷。 In some embodiments, after completing defect removal from a section, the processor is configured to move the PCB relative to the optical assembly to position the optical assembly to remove a subsequent defect located in a subsequent section of the PCB.
所揭示之技術經必要修改之後可適用於修復其他類型之電子組件及模組,諸如(但不限於)平面顯示器(FPD)。 The disclosed techniques can be applied, mutatis mutandis, to repair other types of electronic components and modules, such as (but not limited to) flat panel displays (FPDs).
再者,所揭示之技術減少PCB及其他電子組件及模組之循 環時間且提高修復程序之準確度,且因此,降低生產成本且改良PCB及電子產品之品質。 Furthermore, the disclosed technology reduces the cycle time of PCBs and other electronic components and modules and improves the accuracy of the repair process, thereby reducing production costs and improving the quality of PCBs and electronic products.
系統描述 System Description
圖1係根據本發明之一實施例之用於修復一樣本21之電子電路之一系統11之一方塊圖。在本實例中,樣本21包括一印刷電路板(PCB),但在其他實施例中,樣本21可包括一電子產品上之任何其他適合類型之組件或模組,如下文所描述。 FIG1 is a block diagram of a system 11 for repairing an electronic circuit of a sample 21 according to an embodiment of the present invention. In this example, the sample 21 comprises a printed circuit board (PCB), but in other embodiments, the sample 21 may comprise any other suitable type of component or module on an electronic product, as described below.
在一些實施例中,系統11包括具有一雷射源(在本文中指稱一雷射12)之一光學總成13,其經組態以發射一雷射光束25。在本實例中,雷射12經組態以發射具有一532nm波長之綠色雷射之脈衝,但在其他實施例中,雷射12可經組態以發射任何其他適合類型及波長之雷射光束,諸如(但不限於)1064nm或266nm。 In some embodiments, system 11 includes an optical assembly 13 having a laser source (referred to herein as a laser 12) configured to emit a laser beam 25. In this example, laser 12 is configured to emit pulses of green laser light having a wavelength of 532 nm, but in other embodiments, laser 12 can be configured to emit any other suitable type and wavelength of laser light, such as, but not limited to, 1064 nm or 266 nm.
在本發明之上下文中及申請專利範圍中,術語「雷射光束25」、「光束25」及「雷射光束」可互換使用且係指自雷射12朝向樣本21發射且由系統11之光學總成13之組件操縱之光束,其在本文中詳細描述。 In the context of the present invention and the claims, the terms "laser beam 25," "beam 25," and "laser beam" are used interchangeably and refer to the beam emitted from the laser 12 toward the sample 21 and manipulated by the components of the optical assembly 13 of the system 11, which are described in detail herein.
在一些實施例中,光學總成13包括一聲光調變器(AOM)16、一掃描器18及聚焦光學器件24,此等在下文詳細描述。在一些實施例中,光束25經組態以通過光學總成13,且被引導至樣本21以修復樣本21之表面上產生之電子電路。 In some embodiments, optical assembly 13 includes an acousto-optic modulator (AOM) 16, a scanner 18, and focusing optics 24, which are described in detail below. In some embodiments, light beam 25 is configured to pass through optical assembly 13 and be directed toward sample 21 to repair electronic circuits created on the surface of sample 21.
在一些實施例中,光學器件14經組態以在進入AOM 16之前塑形及聚焦光束25,AOM 16經組態以(a)阻擋或通過(開/關)雷射光束25朝向樣本21,(b)控制光束25之強度,及(c)控制朝向樣本21通過之光束25之脈衝數。 In some embodiments, the optical device 14 is configured to shape and focus the laser beam 25 before entering the AOM 16. The AOM 16 is configured to (a) block or pass (turn on/off) the laser beam 25 toward the sample 21, (b) control the intensity of the laser beam 25, and (c) control the number of pulses of the laser beam 25 passing toward the sample 21.
在一些實施例中,掃描器18可包括一掃描鏡或任何其他適合類型之掃描器,其經組態以引導光束25撞擊於樣本21之一區段上以移除形成於樣本21之各自區段上之一層(諸如銅)。掃描器18經進一步組態以使用任何掃描方案(交錯掃描、或螺旋掃描或任何其他種類之掃描方案)跨樣本21表面上之預期位置以任何適合掃描速率(例如典型掃描速率介於(但不限於)約10mm/秒至約1000mm/秒之間)掃描光束25。 In some embodiments, the scanner 18 may include a scanning mirror or any other suitable type of scanner configured to direct the light beam 25 to impinge on a section of the sample 21 to remove a layer (e.g., copper) formed on the respective section of the sample 21. The scanner 18 is further configured to scan the light beam 25 across the desired location on the surface of the sample 21 using any scanning scheme (interlaced scanning, spiral scanning, or any other type of scanning scheme) at any suitable scanning rate (e.g., typical scanning rates ranging from, but not limited to, about 10 mm/second to about 1000 mm/second).
在本發明之上下文中,用於任何數值或範圍之術語「約」或「近似」指示允許部分或組件之集合為其預期目的起作用之一適合尺寸公差。 In the context of this invention, the term "about" or "approximately" used for any numerical value or range indicates a suitable dimensional tolerance that allows the part or assembly of components to function for its intended purpose.
在一些實施例中,聚焦光學器件24經組態以聚焦引導至樣本21之表面上之預期位置之光束25。如圖1中所展示,光學總成13經組態以掃描雷射光束25以撞擊於樣本21之所要區段上。 In some embodiments, focusing optics 24 are configured to focus beam 25 directed to a desired location on the surface of sample 21. As shown in FIG1 , optical assembly 13 is configured to scan laser beam 25 to impinge on a desired section of sample 21.
應注意在光束掃描期間,一第一光束25可以約一直角撞擊於樣本21之一第一區段上,且一第二光束25可以除一直角之外之任何適合角度撞擊於一第二不同區段之表面上。 It should be noted that during beam scanning, a first beam 25 may impinge on a first section of the sample 21 at approximately a right angle, and a second beam 25 may impinge on the surface of a second, different section at any suitable angle other than a right angle.
現參考展示樣本21之一區段之表面之一插圖19。在本實施例中,樣本21之區段包括具有銅或銅合金之在一基板23(諸如前述PCB之一層壓板)上圖案化之一層22。有時,在PCB之生產期間可出現一缺陷17(在本實例中,銅之非所要過量圖案)。銅之過量圖案可引起(例如)層22之跡線之間的電短路,其可損害PCB之功能性。 Reference is now made to inset 19 showing the surface of a section of sample 21. In this embodiment, the section of sample 21 includes a layer 22 patterned on a substrate 23 (such as a laminate of the aforementioned PCB) comprising copper or a copper alloy. Occasionally, during PCB production, a defect 17 (in this example, an undesirable excess pattern of copper) may occur. This excess pattern of copper can cause, for example, electrical shorts between traces of layer 22, which can impair the functionality of the PCB.
現返回參考圖1之一般視圖。在一些實施例中,系統11經組態以藉由引導光束25撞擊於各自區段之表面上來修復樣本21之一區段上出現之此等缺陷17以使用一雷射燒蝕程序移除缺陷17。回應於撞擊雷 射光束25,光自樣本21之表面發射。在本實例中,一些光(本文中指稱光束30,其係一同軸光束)與樣本21約成一直角;且其他光束(本文中指稱光束32,其等係離軸光束)與樣本21成其他角度,如圖1中所展示。 Referring back to the general view of FIG. 1 , in some embodiments, system 11 is configured to repair defects 17 present on a section of sample 21 using a laser ablation process by directing a light beam 25 to impinge on the surface of the respective section. In response to the impinging laser beam 25 , light is emitted from the surface of sample 21 . In this example, some of the light (herein referred to as light beam 30 , which is an on-axis beam) is at approximately a right angle to sample 21 , while other light beams (herein referred to as light beam 32 , which are off-axis beams) are at other angles to sample 21 , as shown in FIG. 1 .
偵測指示自基板移除之銅之光譜組件在一些實施例中,系統11包括經組態以分別偵測光束30及32之偵測總成(DA)34及44。應注意與光束32相比,光束30在通過聚焦光學器件24時被偵測到,且因此,與自光束32接收之資訊相比,通常(但不一定)含有更多以及不同資訊。應注意光束32未通過聚焦光學器件24,且因此,與光束30相比,具有較少干擾。因此,光束30及32之一組合提供自樣本21感應及發射之一互補光。 Detection of Spectroscopic Assembly Indicating Copper Removal from Substrate In some embodiments, system 11 includes detection assemblies (DAs) 34 and 44 configured to detect beams 30 and 32, respectively. Note that beam 30 is detected while passing through focusing optics 24 compared to beam 32 and, therefore, typically (but not necessarily) contains more and different information than the information received from beam 32. Note that beam 32 does not pass through focusing optics 24 and, therefore, has less interference than beam 30. Thus, a combination of beams 30 and 32 provides a complementary beam sensed and emitted from sample 21.
在一些實施例中,系統11包括經組態以將光束30引導至DA 34之一光束分離器(BS)29。在一些實施例中,DA 34經組態以自光束30偵測指示在燒蝕程序期間自樣本21之基板23移除之缺陷17之銅之光譜組件。 In some embodiments, system 11 includes a beam splitter (BS) 29 configured to direct light beam 30 to DA 34. In some embodiments, DA 34 is configured to detect spectroscopic components of copper from light beam 30 that indicate defects 17 removed from substrate 23 of sample 21 during an ablation process.
在一些實施例中,DA 34包括經組態以通過指示銅之一個或多個各自光譜組件(在本文中亦指稱銅光譜組件)且阻擋光束30之其他光譜組件之一個或多個濾波器37。DA 34進一步包括(i)經組態以聚焦發射光之光學器件36,其包括通過一個或多個濾波器37之一個或多個銅光譜組件(SC),及(ii)一個或多個偵測器35,其等經組態以偵測銅SC。 In some embodiments, the DA 34 includes one or more filters 37 configured to pass one or more respective optical components (also referred to herein as copper spectral components) indicating copper and block other optical components of the light beam 30. The DA 34 further includes (i) optics 36 configured to focus emitted light, including one or more copper spectral components (SCs) passing through the one or more filters 37, and (ii) one or more detectors 35 configured to detect copper SCs.
在一些情況中,雷射光束25之至少部分可自樣本21之表面反射及/或散射,且可引起一個或多個偵測器35之飽和,因此對所關注之光譜組件無視。 In some cases, at least a portion of the laser beam 25 may be reflected and/or scattered from the surface of the sample 21 and may cause saturation of one or more detectors 35, thereby blinding the spectral component of interest.
在一些實施例中,濾波器37及47之至少一者亦可包括一斥 拒濾波器,其經組態以衰減或阻擋自樣本21反射及/或散射之雷射光。 In some embodiments, at least one of filters 37 and 47 may also include a rejection filter configured to attenuate or block laser light reflected and/or scattered from sample 21.
在本發明之上下文中,偵測到之光譜組件構成指示不期望形成於基板23之表面上之缺陷17之非所要銅之存在及燒蝕之一指紋。 In the context of the present invention, the detected optical spectrum component constitutes a fingerprint indicating the presence of unwanted copper and corrosion of defects 17 that are undesirably formed on the surface of the substrate 23.
在一些實施例中,經組態以偵測離軸光束(例如光束32)之DA 44包括經組態以通過銅SC且阻擋光束30之其他光譜組件之一濾波器47。DA 44進一步包括(i)光學器件46,其經組態以聚焦及塑形通過一個或多個濾波器47之銅SC,及(ii)一個或多個偵測器45,其等經組態以偵測一個或多個銅SC。 In some embodiments, a DA 44 configured to detect off-axis beams (e.g., beam 32) includes a filter 47 configured to pass copper SCs and block other optical components of beam 30. DA 44 further includes (i) optics 46 configured to focus and shape the copper SCs passing through one or more filters 47, and (ii) one or more detectors 45 configured to detect the one or more copper SCs.
在一些實施例中,DA 34及44經組態以偵測任何適合類型之光譜發射,諸如選自由以下組成之一光譜發射列表之一個或多個光譜發射:(a)螢光、(b)電漿、(c)拉曼、(d)紅外熱輻射及(e)雷射誘導崩潰光譜法(LIBS)。 In some embodiments, DAs 34 and 44 are configured to detect any suitable type of spectral emission, such as one or more spectral emissions selected from a list of spectral emissions consisting of: (a) fluorescence, (b) plasmon, (c) Raman, (d) infrared thermal radiation, and (e) laser-induced avalanche spectroscopy (LIBS).
在一些實施例中,系統11包括經組態以自Da 34及44接收指示偵測到之銅SC之信號之一處理器33。基於所接收之信號,處理器33經組態以設定用於將雷射光束25引導至至樣本21之一區段上之缺陷17之一停止時間,及在雷射燒蝕程序之設定停止時間(本文中亦指稱一終點)停止光束25撞擊於區段上。 In some embodiments, system 11 includes a processor 33 configured to receive signals from Da 34 and 44 indicating detected copper SC. Based on the received signals, processor 33 is configured to set a stop time for directing laser beam 25 to defect 17 on a section of sample 21 and to stop beam 25 from impinging on the section at the set stop time (also referred to herein as an end point) of the laser ablation process.
在一些實施例中,處理器33經組態以控制光學總成13之主動組件(諸如(但不限於)雷射12、AOM 16及掃描器18)以停止光束25撞擊於樣本21之前述區段上。在圖1之實例中,系統11包括經組態以控制AOM 16之一控制器46及經組態以控制掃描器18之一控制器48。在其他實施例中,處理器33經組態以直接控制AOM 16及掃描器18之至少一者。類似地,系統11可包括經組態以控制雷射12之一控制器(圖中未展示)。上述所 有控制器經組態以與處理器33交換控制信號及其他類型之資料。 In some embodiments, processor 33 is configured to control active components of optical assembly 13 (such as, but not limited to, laser 12, AOM 16, and scanner 18) to prevent beam 25 from impinging on the aforementioned section of sample 21. In the example of FIG. 1 , system 11 includes a controller 46 configured to control AOM 16 and a controller 48 configured to control scanner 18. In other embodiments, processor 33 is configured to directly control at least one of AOM 16 and scanner 18. Similarly, system 11 may include a controller (not shown) configured to control laser 12. All of these controllers are configured to exchange control signals and other types of data with processor 33.
在一些實施例中,處理器33經組態以使DA 34及44之操作與衝擊樣本21之區段上之雷射光束25同步。例如,處理器33經組態以「打開」DA 34及44之至少一者以僅在雷射光束25之一個或多個脈衝撞擊於缺陷17上之後一預界定時間延遲(例如幾微秒)偵測發射光。應注意光譜組件之發射可為時間相依,因此,控制偵測時序可改良偵測到之光譜組件之信雜比(SNR)。 In some embodiments, processor 33 is configured to synchronize the operation of DAs 34 and 44 with the laser beam 25 impinging on a section of sample 21. For example, processor 33 is configured to "turn on" at least one of DAs 34 and 44 to detect emitted light only a predetermined time delay (e.g., a few microseconds) after one or more pulses of laser beam 25 impinge on defect 17. It should be noted that the emission of optical components can be time-dependent, and therefore, controlling the detection timing can improve the signal-to-noise ratio (SNR) of the detected optical components.
在一些實施例中,雷射12包括任何適合之雷射,諸如(但不限於)由法國Teem Photonics of Grenoble供應之一被動Q-開關微雷射,其經組態以發射雷射光束25之脈衝。在此等實施例中,處理器33經組態以控制AOM 16以停止或通過光束25,及設定由雷射12施加於樣本21之光束25之強度及脈衝數。 In some embodiments, laser 12 comprises any suitable laser, such as, but not limited to, a passive Q-switched microlaser supplied by Teem Photonics of Grenoble, France, configured to emit pulses of laser beam 25. In these embodiments, processor 33 is configured to control AOM 16 to stop or pass beam 25, and to set the intensity and number of pulses of beam 25 applied by laser 12 to sample 21.
在其他實施例中,除雷射12之外,系統11可包括與雷射12之光學路徑對準且經組態以將一UV光束引導至樣本21上之相同於雷射12引導雷射光束25之位置之一紫外(UV)雷射。 In other embodiments, in addition to laser 12, system 11 may include an ultraviolet (UV) laser aligned with the optical path of laser 12 and configured to direct a UV beam onto sample 21 at the same location where laser 12 directs laser beam 25.
在一些實施例中,DA 34及44或額外DA經組態以偵測自樣本21發射之光譜回應。應注意偵測到之光譜回應係由UV光束增強,且DA經組態以產生具有改良SNR(歸因於UV光束之存在)之一信號,其指示自缺陷17發射之銅之偵測到之一個或多個光譜組件。 In some embodiments, DAs 34 and 44 or additional DAs are configured to detect spectral responses emitted from sample 21. Note that the detected spectral responses are enhanced by the UV beam, and the DAs are configured to generate a signal with an improved SNR (attributed to the presence of the UV beam), indicating the detection of one or more spectral components of copper emitted from defect 17.
在一些實施例中,處理器33保持具有待由雷射燒蝕移除之缺陷17之樣本21之一個或多個區段。處理器33經組態以藉由控制用於在樣本21之一個或多個各自區段上掃描雷射光束25之掃描器18來控制各自區段處之缺陷17之修復程序。 In some embodiments, the processor 33 holds one or more sections of the sample 21 having defects 17 to be removed by laser ablation. The processor 33 is configured to control the repair process of the defects 17 at the respective sections by controlling the scanner 18 to scan the laser beam 25 over the respective one or more sections of the sample 21.
在一些實施例中,系統11包括一額外光束分離器(本文中指稱BS 15)及經組態以獲取樣本21之影像之一攝影機總成(CA)20。由攝影機總成20獲取之影像可用於(例如)在由雷射光束25移除缺陷17之前及/或之後審查目標區段,或用於其他目的,諸如用於將系統11導航至具有缺陷17之樣本21之區段。 In some embodiments, the system 11 includes an additional beam splitter (referred to herein as BS 15) and a camera assembly (CA) 20 configured to acquire images of the sample 21. The images acquired by the camera assembly 20 can be used, for example, to review the target section before and/or after the defect 17 is removed by the laser beam 25, or for other purposes, such as for navigating the system 11 to the section of the sample 21 having the defect 17.
在一些實施例中,CA 20包括經組態以引導一光束照明樣本21之一攝影機光學總成(COA)(圖中未展示),及經組態以經由BS 15接收自樣本21反射之一光束28之一攝影機(圖中未展示)。CA 20經組態以將所獲取之影像傳輸至處理器33。 In some embodiments, CA 20 includes a camera optical assembly (COA) (not shown) configured to direct a light beam to illuminate sample 21, and a camera (not shown) configured to receive a light beam 28 reflected from sample 21 via BS 15. CA 20 is configured to transmit the acquired image to processor 33.
在一些實施例中,處理器33經組態以針對樣本21之表面上之一所要位置防止可在CA 20與雷射光束25之間發生之光學瞄準線誤差。 In some embodiments, processor 33 is configured to prevent optical line-of-sight errors that may occur between CA 20 and laser beam 25 for a desired location on the surface of sample 21.
在其他實施例中,因為處理器33經組態以設定將雷射光束25引導至樣本21之停止時間,因此可不需要缺陷17已自樣本21移除之一視覺驗證,且因此可自系統11之組態省略CA 20。 In other embodiments, because the processor 33 is configured to set the dwell time for directing the laser beam 25 to the sample 21, a visual verification that the defect 17 has been removed from the sample 21 may not be required, and thus the CA 20 may be omitted from the configuration of the system 11.
在一些實施例中,系統11包括經組態以傳導自DA 34及44接收之信號及處理器33、系統11之主動組件(例如雷射12、AOM 16及掃描器18)與攝影機總成20之間交換之控制信號之電纜40。 In some embodiments, system 11 includes cables 40 configured to carry signals received from DAs 34 and 44 and control signals exchanged between processor 33, active components of system 11 (e.g., laser 12, AOM 16, and scanner 18), and camera assembly 20.
通常,處理器33包括一通用處理器,其在軟體中程式化以實施本文所描述之功能。軟體可(例如)經由一網路以電子形式下載至處理器,或替代地或另外,其可提供及/或儲存於非暫時性有形媒體(諸如磁性、光學或電子記憶體)上。類似地,上述控制器包括在軟體中程式化以實施本文所描述之功能之通用控制器。 Typically, processor 33 comprises a general-purpose processor programmed in software to implement the functionality described herein. The software may be downloaded to the processor electronically, for example, over a network, or alternatively or additionally, it may be provided and/or stored on non-transitory tangible media (such as magnetic, optical, or electronic memory). Similarly, the controller described above comprises a general-purpose controller programmed in software to implement the functionality described herein.
偵測指示自基板移除之基板材料之光譜組件 Spectroscopic component for detecting and indicating removal of substrate material from a substrate
在一些情況中,例如,當雷射光束25(有意或無意地)引導至回位於樣本21之前述區段處之缺陷17之一側壁時,雷射光束25可同時撞擊於包括銅之過量圖案之一缺陷17及基板23上。 In some cases, for example, when laser beam 25 is directed (intentionally or unintentionally) back toward a sidewall of defect 17 located at the aforementioned section of sample 21, laser beam 25 may simultaneously impinge on a defect 17 comprising an excess pattern of copper and substrate 23.
在一些實施例中,系統11包括一個或多個額外偵測總成(圖中未展示),其等經組態以自光束30及32偵測指示在燒蝕期間自基板23移除之基板材料(例如層壓板)之一額外光譜組件。 In some embodiments, system 11 includes one or more additional detection assemblies (not shown) configured to detect from beams 30 and 32 an additional spectroscopic component indicative of substrate material (e.g., laminate) removed from substrate 23 during ablation.
在一些實施例中,DA 34及44可包括經組態以通過在燒蝕期間無意地自基板23移除之層壓板之光譜組件之額外濾波器(圖中未展示)。此等額外濾波器經組態以阻擋光束30及32之(而非層壓板之)其他光譜組件。 In some embodiments, DAs 34 and 44 may include additional filters (not shown) configured to pass optical components of the laminate that are inadvertently removed from substrate 23 during ablation. These additional filters are configured to block other optical components of beams 30 and 32 (not of the laminate).
在一些實施例中,(例如)除濾波器37及47之外,額外濾波器可安裝在DA 34及44上。在替代實施例中,濾波器37及47之至少一者經組態以通過銅及層壓板之光譜組件兩者。 In some embodiments, additional filters may be mounted on DAs 34 and 44, for example, in addition to filters 37 and 47. In an alternative embodiment, at least one of filters 37 and 47 is configured to pass both the copper and laminate optical components.
在一些實施例中,當光束25同時撞擊於缺陷17及基板23上時,可自樣本21燒蝕銅及層壓板。回應於燒蝕,處理器33可自DA 34及44或自前述一個或多個額外DA接收指示銅光譜組件及層壓板光譜組件兩者之信號。在此等實施例中,處理器33可(i)停止雷射光束25撞擊於樣本21之各自區段之前述側壁上,及(ii)重新引導雷射光束25以僅撞擊於缺陷17上以在不燒蝕層壓板或來自基板23之任何其他材料之情況中燒蝕來自缺陷17之銅。 In some embodiments, when beam 25 simultaneously impinges on defect 17 and substrate 23, copper and the laminate may be etched from sample 21. In response to the etch, processor 33 may receive signals indicative of both the copper optical component and the laminate optical component from DAs 34 and 44, or from one or more additional DAs. In these embodiments, processor 33 may (i) stop laser beam 25 from impinging on the aforementioned sidewalls of the respective sections of sample 21, and (ii) redirect laser beam 25 to impinge only on defect 17, thereby etching copper from defect 17 without etching the laminate or any other material from substrate 23.
在其他實施例中,DA 34及44之至少一者可包括一光譜儀,其經組態以自光束30及32之至少一者偵測銅之光譜組件,且產生指示銅之偵測到之光譜組件之一信號。在一實施例中,光譜儀可包括來自美 國紐約Ocean Insight of Rochester之一基於多元件線感測器/偵測器之光譜儀。 In other embodiments, at least one of DAs 34 and 44 may include a spectrometer configured to detect copper spectral components from at least one of light beams 30 and 32 and generate a signal indicative of the detected copper spectral components. In one embodiment, the spectrometer may include a multi-element line sensor/detector-based spectrometer from Ocean Insight of Rochester, New York, USA.
在一些實施例中,光譜儀亦可經組態以同時偵測及產生指示銅及層壓板兩者之光譜組件之信號使得回應於接收此等信號,處理器33可停止雷射光束25撞擊於基板23上。 In some embodiments, the spectrometer can also be configured to simultaneously detect and generate signals indicative of optical components of both the copper and laminate so that in response to receiving these signals, the processor 33 can stop the laser beam 25 from impinging on the substrate 23.
在一些實施例中,偵測器35及45之至少一者及/或前述光譜儀之至少一者可包括快速偵測能力以縮短偵測時間且加強燒蝕程序之即時監測及控制。在此等實施例中,偵測器35及45之至少一者可包括由(例如)美國新澤西州牛頓Thorlabs Inc.提供之快速光二極體及/或由(例如)美國紐約Ocean Insight of Rochester生產之快速光譜儀。 In some embodiments, at least one of detectors 35 and 45 and/or at least one of the aforementioned spectrometers may include fast detection capabilities to shorten detection time and enhance real-time monitoring and control of the ablation process. In such embodiments, at least one of detectors 35 and 45 may include fast photodiodes provided by, for example, Thorlabs Inc. of Newton, New Jersey, USA, and/or fast spectrometers manufactured by, for example, Ocean Insight of Rochester, New York, USA.
在替代實施例中,系統11可包括DA及/或光譜儀及/或經組態以偵測構成基板23上之缺陷17之銅及/或其他異物之光譜組件之任何其他適合子系統之適合組合。 In alternative embodiments, the system 11 may include a suitable combination of a DA and/or a spectrometer and/or any other suitable subsystems of optical components configured to detect copper and/or other foreign matter constituting the defect 17 on the substrate 23.
在一些實施例中,處理器33可自一缺陷檢驗系統(圖中未展示)接收包括位於樣本21之第一及第二各自區段之第一及第二缺陷17之座標之一缺陷檔案。在一些實施例中,處理器33可控制一運動控制子系統(圖中未展示)以將第一區段定位為靠近光學總成13以使用雷射光束25移除第一缺陷,如上文所描述。在一些實施例中,在結束第一缺陷之燒蝕之後(例如藉由設定停止時間且在設定之停止時間停止雷射光束25撞擊於第一區段上),處理器33經組態以控制光學總成13將雷射光束25引導至第二區段以移除第二缺陷。例如,處理器33可控制AOM 16以阻擋雷射光束25撞擊於第一區段上,且進一步控制(例如)前述運動控制子系統以使樣本21及雷射12相對於彼此移動以在第二區段處執行第二缺陷之燒蝕。另外或替代 地,在第一缺陷及第二缺陷彼此非常接近之情況中,在結束第一缺陷之移除之後,處理器33可控制掃描器18以在不使用運動控制系統之情況中將雷射光束25重新引導至第二缺陷。 In some embodiments, processor 33 may receive a defect file including coordinates of first and second defects 17 located at first and second respective sections of sample 21 from a defect inspection system (not shown). In some embodiments, processor 33 may control a motion control subsystem (not shown) to position the first section near optical assembly 13 to remove the first defect using laser beam 25, as described above. In some embodiments, after completing ablation of the first defect (e.g., by setting a stop time and stopping laser beam 25 from impinging on the first section at the set stop time), processor 33 is configured to control optical assembly 13 to direct laser beam 25 to the second section to remove the second defect. For example, processor 33 may control AOM 16 to block laser beam 25 from impinging on the first section and further control, for example, the aforementioned motion control subsystem to move sample 21 and laser 12 relative to each other to perform ablation of a second defect at the second section. Additionally or alternatively, if the first and second defects are in close proximity, processor 33 may control scanner 18 to redirect laser beam 25 to the second defect after completing removal of the first defect without using the motion control system.
如上文所描述,在結束自樣本21之第一及第二區段移除一個或多個缺陷17之後,處理器33經組態以控制運動控制子系統以使樣本21相對於系統11移動以執行對自第一及第二區段移除之缺陷之驗證。 As described above, after completing the removal of one or more defects 17 from the first and second sections of the sample 21, the processor 33 is configured to control the motion control subsystem to move the sample 21 relative to the system 11 to perform verification of the defects removed from the first and second sections.
在一些實施例中,系統11經組態以燒蝕發生在其他種類之表面上之其他種類之缺陷,使得缺陷包含除銅之外之材料及/或包括除層壓板之外之材料之表面。 In some embodiments, system 11 is configured to etch other types of defects occurring on other types of surfaces, such that the defects comprise materials other than copper and/or include surfaces of materials other than laminates.
例如,在具有銅之一設計圖案之一區段中,例如在一焊接遮罩程序期間,可發生一聚合物缺陷。在此等實施例中,光學總成13經組態以將雷射光束25引導至聚合物缺陷,且DA 34及44之至少一者經組態以偵測由雷射光束25撞擊於缺陷上而感應之一個或多個光譜組件。一個或多個光譜組件作為光束30及32之組件自聚合物缺陷發射且由DA 34及44之至少一者偵測。 For example, a polymer defect may occur in a region of a copper design, such as during a solder mask process. In these embodiments, optical assembly 13 is configured to direct laser beam 25 toward the polymer defect, and at least one of DAs 34 and 44 is configured to detect one or more optical components responsive to the laser beam 25 impinging on the defect. The one or more optical components are emitted from the polymer defect as components of beams 30 and 32 and detected by at least one of DAs 34 and 44.
在此等實施例中,處理器33經組態以基於至少聚合物缺陷及銅圖案之偵測到之光譜組件來控制燒蝕程序。因此,當偵測到之信號指示銅之一個或多個光譜組件時,及/或在偵測到之信號中不存在聚合物缺陷之光譜組件時,處理器33經組態以控制光學總成13以停止雷射光束撞擊於包括聚合物缺陷之區段上,或控制光學總成以控制雷射光束25之參數以(例如)衰減雷射光束25。 In these embodiments, processor 33 is configured to control the ablation process based on at least the detected spectral components of the polymer defect and the copper pattern. Thus, when the detected signal indicates one or more spectral components of copper and/or when the spectral components of the polymer defect are absent in the detected signal, processor 33 is configured to control optical assembly 13 to stop the laser beam from impinging on the segment including the polymer defect, or to control the optical assembly to control parameters of laser beam 25 to, for example, attenuate laser beam 25.
以實例之方式展示系統11之此特定組態以繪示由本發明之實施例所解決之某些問題且展現此等實施例在增強此一系統之效能中之應 用。然而,本發明之實施例決不受限於此特定種類之實例性系統,且本文所描述之原理可類似地應用於其他種類之缺陷修復系統。 This particular configuration of system 11 is presented as an example to illustrate some of the problems solved by embodiments of the present invention and to demonstrate the application of these embodiments to enhance the performance of such a system. However, embodiments of the present invention are in no way limited to this particular type of exemplary system, and the principles described herein can be similarly applied to other types of defect repair systems.
圖2A係展示根據本發明之一實施例之在缺陷17之燒蝕期間隨時間自樣本21發射之光之一個或多個銅光譜組件72之偵測之一圖表70。垂直軸指定一個或多個銅光譜組件之強度且水平軸指定一時間軸。 FIG2A is a graph 70 showing detection of one or more copper spectral components 72 of light emitted from sample 21 over time during ablation of defect 17 according to an embodiment of the present invention. The vertical axis specifies the intensity of the one or more copper spectral components and the horizontal axis specifies a time axis.
在圖2A之實例中,缺陷17包括具有18μm之一厚度之銅。一雙頭軸76展示缺陷17之燒蝕時間,而標記78及79分別展示雷射之開始時間及自銅層發射之光譜組件之停止時間。在圖2A之實例中,燒蝕時間約為85毫秒。圖表70亦展示偵測之雜訊74。應注意在標記79之後,銅光譜組件72未出現在圖表70中,因為缺陷17已被移除。應注意一旦銅光譜組件消失,則雷射將被設定為關閉,以避免或最小化對下伏層壓板之非所要損壞。 In the example of Figure 2A , defect 17 comprises copper having a thickness of 18 μm. A double-ended axis 76 shows the erosion time of defect 17, while marks 78 and 79 respectively show the start time of the laser and the stop time of the optical component emitted from the copper layer. In the example of Figure 2A , the erosion time is approximately 85 milliseconds. Graph 70 also shows the detected noise 74. Note that after mark 79, the copper optical component 72 does not appear in graph 70 because defect 17 has been removed. Note that once the copper optical component disappears, the laser is turned off to avoid or minimize undesirable damage to the underlying laminate.
在一些實施例中,處理器33經組態以使用任何適合技術來設定燒蝕停止時間。例如,處理器33可設定銅光譜組件72之信號強度之一臨限值。在此實例中,當信號強度在一預界定之時間間隔內低於臨限值時,處理器33控制(例如)AOM 16及掃描器18以在由標記79展示之設定停止時間停止雷射光束25撞擊於具有缺陷17之區段上。在其他實施例中,處理器33可使用任何其他適合技術來設定燒蝕停止時間。 In some embodiments, processor 33 is configured to use any suitable technique to set the ablation stop time. For example, processor 33 may set a threshold value for the signal strength of copper optical component 72. In this example, when the signal strength falls below the threshold value for a predefined time interval, processor 33 controls, for example, AOM 16 and scanner 18 to stop laser beam 25 from impinging on the section having defect 17 at the set stop time indicated by marker 79. In other embodiments, processor 33 may use any other suitable technique to set the ablation stop time.
圖2B係展示根據本發明之一實施例之在缺陷17之燒蝕期間隨時間自樣本21發射之光之銅光譜組件82之一圖表80。垂直軸指定銅光譜組件之強度且水平軸指定一時間軸。 FIG2B is a graph 80 showing a copper spectral component 82 of light emitted from sample 21 over time during ablation of defect 17 according to an embodiment of the present invention. The vertical axis specifies the intensity of the copper spectral component and the horizontal axis specifies a time axis.
在圖2B之實例中,缺陷17包括具有12μm之一厚度之銅。一雙頭軸86展示缺陷17之燒蝕時間,而標記88及89分別展示燒蝕之開始 時間及停止時間。在圖2B之實例中,燒蝕時間約為45毫秒,實質上低於以上圖2A之燒蝕時間。圖表80亦展示銅光譜組件之雜訊84。應注意在標記89之後,銅光譜組件82未出現在圖表80中,因為缺陷17已被移除。 In the example of Figure 2B , defect 17 comprises copper having a thickness of 12 μm. A double-ended spindle 86 shows the etch time for defect 17, while markers 88 and 89 show the start and stop times of the etch, respectively. In the example of Figure 2B , the etch time is approximately 45 milliseconds, substantially lower than the etch time in Figure 2A . Graph 80 also shows the noise 84 of the copper spectral component. Note that after marker 89, the copper spectral component 82 does not appear in graph 80 because defect 17 has been removed.
在一些實施例中,處理器33經組態以使用任何適合技術來設定由標記89展示之燒蝕停止時間,如上文在圖2A中所描述。 In some embodiments, processor 33 is configured to use any suitable technique to set the etch stop time indicated by marker 89, as described above in FIG. 2A.
圖2C係展示根據本發明之一實施例之在缺陷17之燒蝕期間隨時間自樣本21發射之光之銅光譜組件92之一圖表90。垂直軸指定銅光譜組件之強度且水平軸指定一時間軸。 FIG2C is a graph 90 showing a copper spectral component 92 of light emitted from sample 21 over time during ablation of defect 17 according to an embodiment of the present invention. The vertical axis specifies the intensity of the copper spectral component and the horizontal axis specifies a time axis.
在圖2C之實例中,缺陷17包括具有7μm之一厚度之銅。雙頭軸96展示缺陷17之燒蝕時間,而標記98及99分別展示燒蝕之開始時間及停止時間。在圖2C之實例中,燒蝕時間約為20毫秒,實質上低於以上圖2A及圖2B之燒蝕時間。圖表90亦展示銅光譜組件之雜訊94。應注意在標記99之後,銅光譜組件92未出現在圖表90中,因為缺陷17已被移除。 In the example of FIG2C , defect 17 comprises copper having a thickness of 7 μm. Double-ended spindle 96 shows the etch time for defect 17, while markers 98 and 99 show the start and stop times of the etch, respectively. In the example of FIG2C , the etch time is approximately 20 milliseconds, substantially lower than the etch times shown in FIG2A and FIG2B . Graph 90 also shows noise 94 for the copper spectral component. Note that after marker 99, copper spectral component 92 does not appear in graph 90 because defect 17 has been removed.
在一些實施例中,處理器33經組態以使用任何適合技術來設定由標記99展示之燒蝕停止時間。 In some embodiments, processor 33 is configured to use any suitable technique to set the etch stop time indicated by marker 99.
現參考圖表2A、圖2B及圖2C之一一般視圖,其等基於由本發明之發明者實施之實驗(例如)以展現所揭示之概念。在一些實施例中,處理器33經組態以基於缺陷17之銅之偵測到之光譜組件來設定停止時間。圖表2A、圖表2B及圖表2C由各自標記78、88及98展示類似開始時間,及由各自標記79、89及99展示不同停止時間。如上文所描述,歸因於缺陷17之銅之各自厚度18μm、12μm及7μm,停止時間係由處理器33設定。 Reference is now made to a general view of Figures 2A, 2B, and 2C, which are based on experiments performed by the inventors of the present invention, for example, to demonstrate the disclosed concepts. In some embodiments, processor 33 is configured to set a stop time based on the detected optical spectrum of copper defect 17. Figures 2A, 2B, and 2C show similar start times, as indicated by respective labels 78, 88, and 98, and different stop times, as indicated by respective labels 79, 89, and 99. As described above, the stop times were set by processor 33 due to the respective thicknesses of copper defect 17 being 18 μm, 12 μm, and 7 μm.
在其他實施例中,系統11可包括一個或多個額外DA,其等經組態以偵測由雷射光束25燒蝕之層壓板或基板23之任何其他材料之光譜組件。在此等實施例中,層壓光譜組件未由DA 34及44偵測到,且因此未由處理器33使用以設定用於移除缺陷17之燒蝕程序之停止時間。 In other embodiments, system 11 may include one or more additional DAs configured to detect spectral components of the laminate or any other material of substrate 23 that is ablated by laser beam 25. In these embodiments, the spectral components of the laminate are not detected by DAs 34 and 44 and, therefore, are not used by processor 33 to set a stop time for the ablation process used to remove defect 17.
在本實例中,在圖表2A、圖表2B及圖表2C之實例中,銅光譜組件可僅由DA 34偵測。 In this example, in the examples of Figures 2A, 2B, and 2C, the copper optical component can be detected only by DA 34.
在其他實施例中,處理器33經組態以保持用於偵測層壓板光譜組件之一臨限值。在此等實施例中,當自前述一個或多個額外DA以高於臨限值之一位準接收包括層壓光譜組件之一信號時,處理器33經組態以設定停止時間,且控制(例如)AOM 16及/或掃描器18停止雷射光束25撞擊於具有缺陷17之區段上。 In other embodiments, the processor 33 is configured to maintain a threshold value for detecting the laminate optical spectrum component. In these embodiments, when a signal including the laminate optical spectrum component is received from the one or more additional DAs at a level above the threshold value, the processor 33 is configured to set a stop time and control, for example, the AOM 16 and/or the scanner 18 to stop the laser beam 25 from impinging on the section having the defect 17.
如上文在圖1中所描述,處理器33可控制AOM 16以阻擋雷射光束25撞擊於各自區段上。替代地,處理器33可控制掃描器18及/或前述運動控制子系統以使樣本21相對於雷射12移動以引導雷射光束25撞擊於樣本21之另一區段上以移除基板23上出現之另一缺陷17。 As described above in FIG. 1 , processor 33 can control AOM 16 to block laser beam 25 from impinging on the respective sections. Alternatively, processor 33 can control scanner 18 and/or the aforementioned motion control subsystem to move sample 21 relative to laser 12 to direct laser beam 25 to impinge on another section of sample 21 to remove another defect 17 present on substrate 23.
圖3係根據本發明之一實施例之示意性地繪示用於使用在程序期間自缺陷17發射之光之光譜組件來控制自樣本21移除缺陷17之一程序之一方法之一流程圖。 FIG3 is a flow chart schematically illustrating a method for controlling a process of removing a defect 17 from a sample 21 using a spectroscopic component of light emitted from the defect 17 during the process, according to an embodiment of the present invention.
方法自一雷射引導步驟100開始,其中引導雷射光束25撞擊於樣本21之基板23之一區段上以移除區段上出現之缺陷17之銅層。在本實施例中,樣本21包括具有包含層壓板之基板23之PCB。 The method begins with a laser guidance step 100, in which a laser beam 25 is directed to impinge on a section of a substrate 23 of a sample 21 to remove a copper layer having a defect 17 present in the section. In this embodiment, the sample 21 comprises a PCB having a substrate 23 including a laminate.
在一偵測步驟102處,回應於撞擊雷射光束25,DA 34及44之至少一者自樣本21之區段發射之光偵測指示自樣本21移除之銅之一 光譜組件。 At a detection step 102, light emitted from the section of sample 21 in response to the impinging laser beam 25, at least one of DAs 34 and 44, detects a spectral component indicating removal of copper from sample 21.
應注意偵測到之光譜組件構成基板23之表面上存在非所要銅層及其燒蝕程序之一指紋。 It should be noted that the presence of an undesirable copper layer and a fingerprint of its etching process on the surface of the substrate 23 constituting the optical component was detected.
在一決定步驟104處,保持一個或多個光譜組件(SC)之發射位準之一預界定臨限值之處理器33檢查偵測到之SC是否超過臨限值。例如,一方面,當偵測到之銅SC超過一銅SC臨限值時,燒蝕尚未完成。另一方面,在偵測到之信號中無銅SC之存在中,或當偵測到之銅SC之未準低於銅SC臨限值時,必須停止或至少調整燒蝕以防止損壞區段之層壓板。因此,在銅之偵測到之SC超過臨限值之情況中,方法環回至步驟100以繼續燒蝕缺陷17中之銅層。 At a decision step 104, processor 33, which maintains a predefined threshold for the emission level of one or more spectral components (SCs), checks whether the detected SC exceeds the threshold. For example, if the detected Cu SC exceeds a Cu SC threshold, etching is not yet complete. If no Cu SC is present in the detected signal, or if the detected Cu SC is less than the Cu SC threshold, etching must be stopped or at least adjusted to prevent damage to the laminate in that section. Therefore, in the event that the detected SC of copper exceeds the critical value, the method loops back to step 100 to continue etching the copper layer in the defect 17.
在銅之偵測到之SC低於銅SC臨限值之情況中,方法進入一燒蝕控制步驟104,其終止方法。在燒蝕控制步驟104處,處理器33基於偵測到之一個或多個SC控制或停止雷射光束25。例如,在無銅SC之存在中,處理器可為雷射光束25設定停止時間(分別展示為圖表70、圖表80及圖表90之標記79、89及99)。如上文在圖1及圖2中所描述,停止時間基於自燒蝕缺陷17發射之光(例如光束30及32)之偵測到之銅光譜組件。程序33經進一步組態以在設定之停止時間停止雷射光束25撞擊於樣本21之區段上。 In the event that the detected SC for copper is below the copper SC threshold, the method proceeds to an ablation control step 104, which terminates the method. At ablation control step 104, the processor 33 controls or stops the laser beam 25 based on the detected one or more SCs. For example, in the absence of copper SCs, the processor may set a stop time for the laser beam 25 (shown as marks 79, 89, and 99 in graphs 70, 80, and 90, respectively). As described above in FIG. 1 and FIG. 2, the stop time is based on the detected copper spectral component of the light emitted from the ablation defect 17 (e.g., beams 30 and 32). Process 33 is further configured to stop the laser beam 25 from impinging on a section of the sample 21 at a set stop time.
在其他實施例中,例如當仍偵測到銅SC但在低於銅SC臨限值之一位準時,處理器33經組態以控制用於調整雷射光束25之光學總成以防止或最小化對樣本21之層壓材料(例如前述PCB)之損壞。 In other embodiments, for example, when Cu SC is still detected but at a level below a Cu SC threshold, the processor 33 is configured to control the optical assembly for adjusting the laser beam 25 to prevent or minimize damage to the laminate material of the sample 21 (e.g., the aforementioned PCB).
如上文在圖1中所描述,在其他實施例中,DA 34及44之至少一者經組態用於偵測層壓板或PCB之另一材料之光譜組件。在此等實施 例中,在偵測步驟102處,除銅光譜組件之外,DA 34及44可偵測指示自樣本21移除之層壓板之光譜組件。 As described above in FIG. 1 , in other embodiments, at least one of DAs 34 and 44 is configured to detect optical components of another material of the laminate or PCB. In these embodiments, in addition to the copper optical components, DAs 34 and 44 can detect optical components of the laminate that have been removed from sample 21 during detection step 102 .
再者,在此等實施例中,在決定步驟104中,處理器經組態以檢查除銅SC之外之一個或多個SC(例如層壓SC)是否已由DA 34及44之一或多者偵測到。若否,則方法環回至步驟100以如上文所描述繼續燒蝕。 Furthermore, in these embodiments, in decision step 104, the processor is configured to check whether one or more SCs other than copper SCs (e.g., laminated SCs) have been detected by one or more of DAs 34 and 44. If not, the method loops back to step 100 to continue etching as described above.
在已偵測到一個或多個層壓SC之情況中,方法進入步驟104以控制或停止雷射光束25。例如,控制雷射光束25之撞擊位置以在不損壞層壓板之情況中燒蝕缺陷17,或停止雷射光束25撞擊於各自區段上,且因此,防止損壞層壓板。 If one or more laminate SCs have been detected, the method proceeds to step 104 to control or stop the laser beam 25. For example, the impact position of the laser beam 25 is controlled to etch the defects 17 without damaging the laminate, or the laser beam 25 is stopped from impacting the respective sections and, thus, preventing damage to the laminate.
儘管本文所描述之實施例主要解決PCB上發生之銅缺陷之移除,但本文所描述之方法及系統亦可用於其他應用中,諸如使用雷射燒蝕自任何類型之基板移除任何類型之缺陷,及用於產生電子電路之其他基於雷射之程序中,諸如(但不限於)透過銅層控制鑽孔及/或通孔,其中停止雷射鑽探係重要的以防止損壞靠近設計孔/通孔之層及/或層壓板。 While the embodiments described herein primarily address the removal of copper defects occurring on PCBs, the methods and systems described herein may also be used in other applications, such as removing any type of defect from any type of substrate using laser ablation, and in other laser-based processes for producing electronic circuits, such as (but not limited to) controlled drilling of holes and/or vias through copper layers, where stopping the laser drill is important to prevent damage to layers and/or laminates near the designed holes/vias.
因此,將瞭解上述實施例以實例之方式引用,且本發明不受限於上文已特別展示及描述之內容。確切而言,本發明之範疇包括上述各種特徵之組合及子組合兩者,以及熟習技術者在閱讀前述描述時將想到且在先前技術中未揭示之其變動及修改。 Therefore, it will be understood that the above embodiments are cited by way of example only, and the present invention is not limited to what has been particularly shown and described herein. Rather, the scope of the present invention includes both combinations and subcombinations of the various features described above, as well as variations and modifications thereof not disclosed in the prior art that would occur to a person skilled in the art upon reading the foregoing description.
以引用的方式併入本專利申請案中之文件應被視為本申請案之一整體部分,例外處在於此等併入文件中達到以與本說明書中明示或暗示之定義衝突之方式定義任何術語之程度,僅應考量本說明書中之定義。 Documents incorporated by reference into this patent application shall be considered an integral part of this application, except that to the extent such incorporated documents define any term in a manner that conflicts with an express or implied definition in this specification, only the definition in this specification shall control.
100:步驟 102:步驟 104:步驟 106:步驟 100: Step 102: Step 104: Step 106: Step
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| TW202039134A (en) * | 2019-02-08 | 2020-11-01 | 美商康寧公司 | Methods for laser processing transparent workpieces using pulsed laser beam focal lines and vapor etching |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022106922A1 (en) | 2022-05-27 |
| CN116249601A (en) | 2023-06-09 |
| TW202247720A (en) | 2022-12-01 |
| KR20230107364A (en) | 2023-07-14 |
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