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TWI898624B - Circuit board with embedded component and method for fabricating the same - Google Patents

Circuit board with embedded component and method for fabricating the same

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Publication number
TWI898624B
TWI898624B TW113119750A TW113119750A TWI898624B TW I898624 B TWI898624 B TW I898624B TW 113119750 A TW113119750 A TW 113119750A TW 113119750 A TW113119750 A TW 113119750A TW I898624 B TWI898624 B TW I898624B
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TW
Taiwan
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substrate
circuit
conductive
metal layer
layer
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TW113119750A
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Chinese (zh)
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TW202547228A (en
Inventor
廖中興
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先豐通訊股份有限公司
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Priority to TW113119750A priority Critical patent/TWI898624B/en
Application granted granted Critical
Publication of TWI898624B publication Critical patent/TWI898624B/en
Publication of TW202547228A publication Critical patent/TW202547228A/en

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Abstract

A circuit board with embedded component and a method for fabricating the same are provided. The circuit board with at least one embedded component includes a circuit substrate, a conductive structure and an electronic component. The circuit substrate includes a circuit layer which is disposed on the surface of the circuit substrate. The conductive structure is embedded in the circuit substrate and is electrically connected to the circuit layer of the circuit substrate. The conductive structure has a cavity whose opening faces to the surface of the circuit substrate. The electronic component is disposed inside the trench. The source and the gate of the electronic component are electrically connected to the circuit layer, while the drain of the electronic component is electrically connected to the conductive structure. The drain of the electronic component is disposed away from the surface of the circuit substrate.

Description

內埋元件電路板及其製造方法Embedded component circuit board and manufacturing method thereof

本發明是有關於一種電路板,特別是指一種具有內埋元件的電路板。 The present invention relates to a circuit board, and more particularly to a circuit board with embedded components.

現今的碳化矽(SiC)功率模組中的電子元件(例如,裸晶或者晶片)多以打線連接(wire bonding)的方式電性連接至模組內部的線路層。然而,由於碳化矽功率模組大多需要執行高頻切換,故使得因打線而造成寄生電感的問題更加嚴重,進而影響功率模組的效能。為了改善寄生電感的情形,遂發展出將電子元件內埋設置於線路基板中的功率模組。 In current silicon carbide (SiC) power modules, electronic components (e.g., bare die or chips) are often electrically connected to the module's internal circuit layer via wire bonding. However, because SiC power modules often require high-frequency switching, the parasitic inductance introduced by wire bonding becomes a significant issue, impacting power module performance. To mitigate this parasitic inductance, power modules have been developed that embed electronic components within the circuit substrate.

另一方面,內埋於線路基板的電子元件的源極(Source)以及汲極(Drain)分別位於電子元件的相對兩側,因而需要分別通過線路基板相對兩側的外層線路層而電性連接至線路基板外部的元件。此種電性連接不僅限制了內埋元件電路板的佈線設計而影響電路板運作效能,也不利於在電路板的製程中進行電性量測。 On the other hand, the source and drain electrodes of electronic components embedded in the circuit substrate are located on opposite sides of the components. Therefore, they must be electrically connected to components outside the circuit substrate through external wiring layers on opposite sides of the circuit substrate. This electrical connection not only limits the layout design of embedded component circuit boards, affecting their operational performance, but also hinders electrical measurement during the circuit board manufacturing process.

因此,本發明提供了一種內埋元件電路板,藉以提升電路板的製程良率。 Therefore, the present invention provides a circuit board with embedded components to improve the process yield of the circuit board.

本發明至少一實施例還提供一種製造上述內埋元件電路板的方法。 At least one embodiment of the present invention also provides a method for manufacturing the above-mentioned embedded component circuit board.

本發明至少一實施例提供一種內埋元件電路板,包含一線路基板、一導電結構以及一電子元件。線路基板包含一線路層,此線路層設置於線路基板的第一表面。導電結構內埋於線路基板中,並且電性連接至線路基板的線路層。導電結構具有一凹槽,而此凹槽的開口朝向線路基板的第一表面。電子元件設置於導電結構的凹槽內。電子元件的一源極以及一閘極電性連接至線路層,而電子元件的一汲極電性連接至導電結構。電子元件的汲極遠離第一表面而設置。 At least one embodiment of the present invention provides a circuit board with embedded components, comprising a circuit substrate, a conductive structure, and an electronic component. The circuit substrate includes a circuit layer disposed on a first surface of the circuit substrate. The conductive structure is embedded in the circuit substrate and electrically connected to the circuit layer of the circuit substrate. The conductive structure has a recess, with the recess opening facing the first surface of the circuit substrate. The electronic component is disposed within the recess of the conductive structure. A source and a gate of the electronic component are electrically connected to the circuit layer, and a drain of the electronic component is electrically connected to the conductive structure. The drain of the electronic component is disposed remotely from the first surface.

在本發明的至少一實施例中,線路基板還包含包覆導電結構以及電子元件的一絕緣材料。線路層覆蓋絕緣材料,且絕緣材料的一部分位於線路層以及導電結構的凹槽之間。 In at least one embodiment of the present invention, the circuit substrate further includes an insulating material encapsulating the conductive structure and the electronic component. The circuit layer covers the insulating material, and a portion of the insulating material is located between the circuit layer and the groove of the conductive structure.

在本發明的至少一實施例中,電子元件還包含設置於凹槽的底面上的一主體。電子元件的源極以及閘極位於主體的一第一平面,且電子元件的汲極位於主體的一第二平面。第一平面與第二平面分別位於主體的相對兩側,且第二平面面對凹槽的底面。 In at least one embodiment of the present invention, the electronic component further includes a main body disposed on the bottom surface of the recess. The source and gate electrodes of the electronic component are located on a first plane of the main body, and the drain electrode of the electronic component is located on a second plane of the main body. The first plane and the second plane are located on opposite sides of the main body, and the second plane faces the bottom surface of the recess.

在本發明的至少一實施例中,內埋元件電路板還包含設置於凹槽的底面上的一金屬燒結層,此金屬燒結層位於導電結構以及電子元件之間。電子元件通過金屬燒結層而電性連接至導電結構。 In at least one embodiment of the present invention, the embedded component circuit board further includes a metal sintered layer disposed on the bottom surface of the recess, the metal sintered layer being located between the conductive structure and the electronic component. The electronic component is electrically connected to the conductive structure via the metal sintered layer.

在本發明的至少一實施例中,其中導電結構的一端面暴露於線路基板的一第二表面,且線路基板的第一表面以及第二表面分別位於線路基板的相對兩側。 In at least one embodiment of the present invention, an end surface of the conductive structure is exposed on a second surface of the circuit substrate, and the first surface and the second surface of the circuit substrate are located on opposite sides of the circuit substrate.

在本發明的至少一實施例中,導電結構還包含一第一金屬層、一導熱絕緣層以及一第二金屬層。第一金屬層連接電子元件,且導電結構的凹槽位於第一金屬層。導熱絕緣層設置於第一金屬層上,且第一金屬層位於導熱絕緣層以及線路基板的線路層之間。第二金屬層設置於導熱絕緣層上,且導電結構的端面位於第二金屬層。導熱絕緣層位於第一金屬層以及第二金屬層之間,且第二金屬層以及第一金屬層之間無直接電性連接。 In at least one embodiment of the present invention, the conductive structure further includes a first metal layer, a thermally conductive insulating layer, and a second metal layer. The first metal layer is connected to the electronic component, and the groove of the conductive structure is located in the first metal layer. The thermally conductive insulating layer is disposed on the first metal layer and is located between the thermally conductive insulating layer and the circuit layer of the circuit substrate. The second metal layer is disposed on the thermally conductive insulating layer, and the end surface of the conductive structure is located on the second metal layer. The thermally conductive insulating layer is located between the first metal layer and the second metal layer, and there is no direct electrical connection between the second metal layer and the first metal layer.

在本發明的至少一實施例中,導熱絕緣層的熱傳導係數大於10W/mk。 In at least one embodiment of the present invention, the thermal conductivity of the thermally conductive insulating layer is greater than 10 W/mK.

本發明還提供了一種內埋元件電路板的製造方法,包含提供一第一線路基板;在第一線路基板上設置一第二線路基板以及至少一層第一接合基板。第一接合基板位於第一線路基板以及第二線路基板之間;移除第一線路基板的一部分、第二線路基板的一部分以及第一接合基板的一部分,以在第一線路基板、第二線路基板以及第一接合基板中形成一開口。此開口連通第一線路 基板、第二線路基板以及第一接合基板;提供一內埋結構,且此內埋結構包含一具有凹槽的導電結構以及一電子元件。電子元件設置於導電結構的凹槽內,且電子元件的一汲極設置於凹槽的一底面,而電子元件的一源極以及一閘極遠離凹槽的底面而設置。電子元件的汲極電性連接至導電結構;在開口內設置內埋結構;在開口內設置內埋結構之後,在第一線路基板上設置至少一層第二接合基板以及一第一金屬層,以使第二接合基板以及第一金屬層覆蓋內埋結構,且第二接合基板位於第一金屬層以及第一線路基板之間;壓合第一線路基板、第一接合基板、第二線路基板、第二接合基板以及第一金屬層,以形成一初始第三線路基板;在形成初始第三線路基板之後,在初始第三線路基板中形成多個導電盲孔。第一金屬層通過導電盲孔電性連接至內埋結構;以及在形成導電盲孔之後,圖案化第一金屬層,以形成一第一線路層,並且使初始第三線路基板形成一第三線路基板。第一線路層電性連接至導電結構以及電子元件。 The present invention also provides a method for manufacturing a circuit board with embedded components, comprising providing a first circuit substrate; disposing a second circuit substrate and at least one first bonding substrate on the first circuit substrate. The first bonding substrate is positioned between the first and second circuit substrates; removing a portion of the first circuit substrate, a portion of the second circuit substrate, and a portion of the first bonding substrate to form an opening in the first circuit substrate, the second circuit substrate, and the first bonding substrate. The opening connects the first circuit substrate, the second circuit substrate, and the first bonding substrate; and providing an embedded structure comprising a conductive structure having a groove and an electronic component. The electronic component is disposed in the groove of the conductive structure, with a drain electrode of the electronic component disposed on a bottom surface of the groove, and a source electrode and a gate electrode of the electronic component disposed away from the bottom surface of the groove. The drain of the electronic component is electrically connected to the conductive structure; a buried structure is disposed in the opening; after the buried structure is disposed in the opening, at least one second bonding substrate and a first metal layer are disposed on the first circuit substrate, such that the second bonding substrate and the first metal layer cover the buried structure and the second bonding substrate is located between the first metal layer and the first circuit substrate; the first circuit substrate, the first bonding substrate, the second circuit substrate, the second bonding substrate, and the first metal layer are pressed together to form an initial third circuit substrate; after forming the initial third circuit substrate, a plurality of conductive blind vias are formed in the initial third circuit substrate. The first metal layer is electrically connected to the buried structure through the conductive blind vias; and after forming the conductive blind vias, the first metal layer is patterned to form a first circuit layer, thereby converting the initial third circuit substrate into a third circuit substrate. The first circuit layer is electrically connected to the conductive structure and electronic components.

在本發明的至少一實施例中,內埋結構的形成方式包含提供一導電基板;移除導電基板的一部分,以在導電基板上形成至少一凹槽;在導電基板的凹槽內設置一電子元件;在凹槽內設置電子元件之後,在導電基板的一第一表面上貼合至少一第三接合基板以及一第二金屬層,以使第三接合基板形成一絕緣材料,且絕緣材料以及第二金屬層覆蓋電子元件以及凹槽,而絕緣材料位 於第二金屬層以及導電基板之間;在導電基板的第一表面上貼合第三接合基板以及第二金屬層之後,在絕緣材料以及第二金屬層中形成多個導電埋孔,且第二金屬層通過導電埋孔電性連接至導電基板以及電子元件;在形成導電埋孔之後,圖案化第二金屬層,以形成一第二線路層;以及在形成第二線路層之後,沿著第二線路層的一法線切割第二線路層、絕緣材料以及導電基板,以形成內埋結構。 In at least one embodiment of the present invention, the embedded structure is formed by providing a conductive substrate; removing a portion of the conductive substrate to form at least one recess in the conductive substrate; placing an electronic component in the recess of the conductive substrate; and after placing the electronic component in the recess, attaching at least a third bonding substrate and a second metal layer to a first surface of the conductive substrate so that the third bonding substrate forms an insulating material, and the insulating material and the second metal layer cover the electronic component and the recess, and the insulating material is located on the second metal layer. The method comprises forming a first surface of the conductive substrate and a second metal layer between the insulating material and the conductive substrate; after laminating a third bonding substrate and a second metal layer to the first surface of the conductive substrate, forming a plurality of conductive buried vias in the insulating material and the second metal layer, and electrically connecting the second metal layer to the conductive substrate and the electronic component through the conductive buried vias; after forming the conductive buried vias, patterning the second metal layer to form a second circuit layer; and after forming the second circuit layer, cutting the second circuit layer, the insulating material, and the conductive substrate along a normal line of the second circuit layer to form a buried structure.

在本發明的至少一實施例中,在開口內設置內埋結構包含在第二線路基板的一第二表面上貼合一膠帶。第二線路基板位於膠帶以及第一接合基板之間,且膠帶與開口重疊;在第二線路基板的第二表面貼合膠帶之後,將內埋結構設置於膠帶上,且導電結構的凹槽的開口背對膠帶;以及在形成初始第三線路基板之後,移除膠帶,以暴露出導電結構的一端面,且第二線路基板的第二表面與導電結構的端面齊平。 In at least one embodiment of the present invention, disposing the embedded structure within the opening includes laminating a tape to a second surface of a second circuit substrate. The second circuit substrate is positioned between the tape and the first bonding substrate, with the tape overlapping the opening. After laminating the tape to the second surface of the second circuit substrate, the embedded structure is disposed on the tape, with the opening of the recess of the conductive structure facing away from the tape. After forming the initial third circuit substrate, the tape is removed to expose an end surface of the conductive structure, with the second surface of the second circuit substrate aligned with the end surface of the conductive structure.

基於上述,當本發明至少一實施例中的電子元件的源極(以及閘極)與汲極分別位於電子元件的相對兩側時,通過在線路基板中設置具有凹槽的導電結構,並且將電子元件設置於導電結構的凹槽內,以將電子元件的源極與汲極皆電性連接至線路基板的同一側。如此一來,由於電子元件的源極以及汲極皆電性連接至線路基板同一側,可以提升在電路板的製程中進行電性量測的方便性,進而提高電路板的製程良率。 Based on the above, when the source (and gate) and drain of an electronic component in at least one embodiment of the present invention are located on opposite sides of the electronic component, a conductive structure having a groove is provided in the circuit substrate, and the electronic component is placed within the groove of the conductive structure, so that both the source and drain of the electronic component are electrically connected to the same side of the circuit substrate. This facilitates electrical measurements during the circuit board manufacturing process, thereby improving the circuit board manufacturing yield.

100:內埋元件電路板 100: Embedded component circuit board

103v:導電埋孔 103v: Conductive buried vias

110:防焊層 110: Solder mask

113v:導電盲孔 113v: Conductive blind vias

120,210,230:線路基板 120,210,230: Circuit substrate

120f,120s,230s,340s:表面 120f, 120s, 230s, 340s: Surface

122a,122b,122c,122d,122e,322:線路層 122a, 122b, 122c, 122d, 122e, 322: Line layer

124a,124b:絕緣層 124a,124b: Insulating layer

126:絕緣材料 126: Insulation Materials

140:導電結構 140:Conductive structure

140e:端面 140e: End face

142:凹槽 142: Groove

142b:底面 142b: Bottom surface

144a,144b,322b,344a,344b,422:金屬層 144a,144b,322b,344a,344b,422:Metal layer

146,346:導熱絕緣層 146,346: Thermal insulation layer

160:電子元件 160: Electronic components

160d:汲極 160d: Drain

160g:閘極 160g: Gate

160s:源極 160s: Source

165:主體 165: Subject

165f,165s:平面 165f, 165s: plane

180:金屬燒結層 180: Metal sintered layer

190:電鍍通孔 190: Electroplated through-holes

205:膠帶 205: Tape

250,350,450:接合基板 250, 350, 450: Bonding substrate

270:開口 270: Opening

290:內埋結構 290: Embedded structure

340:導電基板 340: Conductive substrate

420:初始線路基板 420: Initial circuit substrate

N1:法線 N1: normal line

w1,w2:寬度 w1,w2: width

從以下詳細敘述並搭配圖式檢閱,可理解本發明的態樣。應注意,多種特徵並未以產業上實務標準的比例繪製。事實上,為了討論上的清楚易懂,各種特徵的尺寸可以任意地增加或減少。 The present invention will be understood from the following detailed description when reviewed in conjunction with the accompanying drawings. It should be noted that many features are not drawn to scale as is standard practice in the industry. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

圖1繪示本發明至少一實施例的內埋元件電路板的剖視圖。 Figure 1 shows a cross-sectional view of an embedded component circuit board according to at least one embodiment of the present invention.

圖2A至圖2B繪示本發明至少一實施例的內埋元件電路板製造方法的剖視圖。 Figures 2A and 2B are cross-sectional views illustrating a method for manufacturing an embedded component circuit board according to at least one embodiment of the present invention.

圖3A至圖3F繪示本發明至少一實施例的內埋元件電路板中內埋結構的製造方法的剖視圖。 Figures 3A to 3F are cross-sectional views illustrating a method for manufacturing an embedded structure in an embedded component circuit board according to at least one embodiment of the present invention.

圖4A至圖4B繪示本發明至少一實施例的內埋元件電路板製造方法的剖視圖。 Figures 4A and 4B are cross-sectional views illustrating a method for manufacturing an embedded component circuit board according to at least one embodiment of the present invention.

本發明將以下列實施例進行詳細說明。須注意的是,以下本發明實施例的敘述在此僅用於舉例說明,並非旨在詳盡無遺地揭示所有實施態樣或是限制本發明的具體實施態樣。舉例而言,敘述中之「第一特徵形成於第二特徵上」包含多種實施方式,其中涵蓋第一特徵與第二特徵直接接觸,亦涵蓋額外的特徵形成於第一特徵與第二特徵之間而使兩者不直接接觸。此外,圖式及說明書中所採用的相同元件符號會盡可能表示相同或相似 的元件。 The present invention will be described in detail using the following embodiments. It should be noted that the following descriptions of the embodiments of the present invention are for illustrative purposes only and are not intended to be exhaustive or to limit the present invention to specific embodiments. For example, the phrase "a first feature formed on a second feature" encompasses various implementations, including both direct contact between the first and second features and additional features formed between the first and second features without direct contact. Furthermore, identical reference numbers are used throughout the drawings and description to represent identical or similar components whenever possible.

空間相對的詞彙,例如「下層的」、「低於」、「下方」、「高於」、「上方」等相關詞彙,於此用以簡單描述如圖所示之元件或特徵與另一元件或特徵的關係。這些空間相對的詞彙除了圖中所描繪的轉向之外,也涵蓋在使用或操作裝置時的不同的轉向。此外,當元件可旋轉(旋轉90度或其他角度)時,在此使用之空間相對的描述語也可作對應的解讀。 Spatially relative terms, such as "inferior," "lower than," "beneath," "above," and related terms, are used herein to simply describe the relationship of one component or feature to another component or feature as shown in the diagram. These spatially relative terms encompass not only the orientation depicted in the diagram but also various orientations during use or operation of the device. Furthermore, when a component is rotatable (90 degrees or other angles), the spatially relative descriptors used herein should be interpreted accordingly.

更甚者,當以「大約」、「約」等描述一數字或一數字範圍時,該詞彙旨在涵蓋合理範圍內之數字,且須考量到本領域的基本技術人員在製造過程中,所能理解之自然差異。數字範圍涵蓋包含所描述之數字的合理範圍,舉例而言,在所描述之數字的+/-10%內,是基於已知之製造公差,該公差數字與該製造特徵具備之特性有關。例如,具有「大約5奈米」厚度的材料層可以涵蓋從4.25奈米至5.75奈米之尺寸範圍,其中關於沉積該材料層的製造公差+/-15%,皆為本領域的基本技術人員所知。進一步而言,本發明可能會在各種示例中重複標號以及/或標示。此重複是為了簡化並清楚說明,而非意圖表明該處所討論的各種實施方式以及/或配置之間的關係。 Furthermore, when words such as "approximately" or "about" are used to describe a number or a range of numbers, such words are intended to encompass numbers within a reasonable range, taking into account the natural variations in manufacturing processes that are understood by those skilled in the art. Numerical ranges encompass a reasonable range of the described number, for example, within +/- 10% of the described number, based on known manufacturing tolerances associated with the characteristics of the manufactured feature. For example, a material layer having a thickness of "approximately 5 nanometers" may encompass a range of sizes from 4.25 nanometers to 5.75 nanometers, where the manufacturing tolerances for depositing the material layer are +/- 15%, which are known to those skilled in the art. Furthermore, the present invention may repeat numbers and/or designations in various examples. This repetition is for simplicity and clarity and is not intended to indicate a relationship between the various implementations and/or configurations discussed here.

本發明至少一實施例提供一種內埋元件電路板100。請參考圖1,內埋元件電路板100包含線路基板120、導電結構140以及電子元件160。線路基板120 包含線路層122a、122b、122c、122d與122e、絕緣層124a與124b以及絕緣材料126,其中絕緣層124a位於線路層122b以及線路層122c之間,而絕緣層124b位於線路層122d以及線路層122e之間。特別一提的是,雖然在本實施例中,線路基板120是包含多層線路層(以及多層絕緣層)的多層板,但本發明不限於此,線路基板120也可以是雙面板,並且僅包含兩層線路層及設置於兩層線路層之間的一層絕緣層。 At least one embodiment of the present invention provides an embedded component circuit board 100. Referring to FIG. 1 , embedded component circuit board 100 includes a circuit substrate 120, a conductive structure 140, and an electronic component 160. Circuit substrate 120 includes circuit layers 122a, 122b, 122c, 122d, and 122e, insulating layers 124a and 124b, and insulating material 126. Insulating layer 124a is located between circuit layers 122b and 122c, and insulating layer 124b is located between circuit layers 122d and 122e. It is worth noting that, although circuit substrate 120 is a multi-layer board including multiple circuit layers (and multiple insulation layers) in this embodiment, the present invention is not limited thereto. Circuit substrate 120 may also be a double-layer board including only two circuit layers and an insulation layer disposed between the two circuit layers.

線路基板120具有第一表面120f以及第二表面120s,且線路基板120的第一表面120f以及第二表面120s分別位於線路基板120的相對兩側。線路層122a設置於線路基板120的第一表面120f,另一方面,導電結構140則內埋於線路基板120中,並且電性連接至線路基板120的線路層122a。如圖1所示,導電結構140具有凹槽142,而凹槽142的開口(未標示)朝向線路基板120的第一表面120f。 Circuit substrate 120 has a first surface 120f and a second surface 120s, located on opposite sides of circuit substrate 120. Circuit layer 122a is disposed on first surface 120f of circuit substrate 120. Meanwhile, conductive structure 140 is embedded within circuit substrate 120 and electrically connected to circuit layer 122a. As shown in Figure 1, conductive structure 140 has a groove 142, with an opening (not shown) facing first surface 120f of circuit substrate 120.

值得一提的是,導電結構140還具有端面140e,且此端面140e與凹槽142分別設置於導電結構140的相對兩側。換句話而言,導電結構140的端面140e朝向線路基板120的第二表面120s。 It is worth noting that the conductive structure 140 also has an end surface 140e, and the end surface 140e and the groove 142 are respectively disposed on opposite sides of the conductive structure 140. In other words, the end surface 140e of the conductive structure 140 faces the second surface 120s of the circuit substrate 120.

電子元件160設置於導電結構140的凹槽142內,電子元件160的源極160s以及閘極(Gate)160g朝向第一表面120f而設置,且源極160s以及閘極160g電性連接至線路層122a。另一方面,電子元件160 的汲極160d則遠離第一表面120f而設置,且汲極160d電性連接至導電結構140。換言之,源極160s與閘極160g到第一表面120f之間的距離小於汲極160d到第一表面120f之間的距離。 The electronic component 160 is disposed within the recess 142 of the conductive structure 140. The source 160s and gate 160g of the electronic component 160 are disposed toward the first surface 120f and are electrically connected to the circuit layer 122a. Meanwhile, the drain 160d of the electronic component 160 is disposed away from the first surface 120f and is electrically connected to the conductive structure 140. In other words, the distance between the source 160s and gate 160g and the first surface 120f is smaller than the distance between the drain 160d and the first surface 120f.

詳細來說,電子元件160還包含主體165,而此主體165設置於凹槽142的底面142b上。電子元件160的源極160s以及閘極160g位於主體165的第一平面165f,且電子元件160的汲極160d則位於主體165的第二平面165s,其中第一平面165f與第二平面165s分別位於主體165的相對兩側,且第二平面165s面對凹槽142的底面142b。 Specifically, the electronic component 160 further includes a body 165 disposed on the bottom surface 142b of the recess 142. The source 160s and gate 160g of the electronic component 160 are located on a first plane 165f of the body 165, and the drain 160d of the electronic component 160 is located on a second plane 165s of the body 165. The first plane 165f and the second plane 165s are located on opposite sides of the body 165, respectively, and the second plane 165s faces the bottom surface 142b of the recess 142.

詳細來說,線路層122a包含源極區、閘極區以及汲極區(未標示),其中電子元件160的源極160s連接至線路層122a的源極區,電子元件160的閘極160g連接至線路層122a的閘極區,而電子元件160的汲極160d連接至線路層122a的汲極區。 Specifically, the circuit layer 122a includes a source region, a gate region, and a drain region (not labeled). The source 160s of the electronic component 160 is connected to the source region of the circuit layer 122a, the gate 160g of the electronic component 160 is connected to the gate region of the circuit layer 122a, and the drain 160d of the electronic component 160 is connected to the drain region of the circuit layer 122a.

電子元件160可以是未經封裝的晶粒(die),但本發明不限於此。在其他實施例中,電子元件160也可以是已封裝的晶片(chip)。每一個導電結構140具有一個凹槽142,且每一個凹槽142內設置有一個電子元件160。特別一提的是,雖然在圖1所繪示的實施例中,線路基板120具有兩個導電結構140,但本發明不限於此。在其他實施例中,線路基板120也可以具有一個以上的導電結構140,例如一個或三個導電結構 140。 The electronic component 160 can be an unpackaged die, but the present invention is not limited thereto. In other embodiments, the electronic component 160 can also be a packaged chip. Each conductive structure 140 has a recess 142, and each recess 142 houses an electronic component 160. It is worth noting that while the circuit substrate 120 has two conductive structures 140 in the embodiment shown in FIG1 , the present invention is not limited thereto. In other embodiments, the circuit substrate 120 can have more than one conductive structure 140, for example, one or three conductive structures 140.

線路基板120的絕緣材料126包覆導電結構140以及電子元件160,而線路層122a覆蓋絕緣材料126,且絕緣材料126的一部分位於線路層122a以及導電結構140的凹槽142之間。絕緣材料126可以包含膨脹係數(coefficient of thermal expansion;CTE)小於10ppm/℃的材料(即低膨脹係數材料),例如,聚氧二甲苯(polyphenylene oxide;PPO)、聚苯醚(polyphenylene ether;PPE)或其相似物。 The insulating material 126 of the circuit substrate 120 covers the conductive structure 140 and the electronic component 160. The circuit layer 122a covers the insulating material 126, and a portion of the insulating material 126 is located between the circuit layer 122a and the groove 142 of the conductive structure 140. The insulating material 126 can include a material with a coefficient of thermal expansion (CTE) less than 10 ppm/°C (i.e., a low thermal expansion material), such as polyphenylene oxide (PPO), polyphenylene ether (PPE), or the like.

內埋元件電路板100還包含金屬燒結層180,此金屬燒結層180設置於凹槽142的底面142b上,並且位於導電結構140以及電子元件160之間。換句話而言,電子元件160是通過金屬燒結層180而電性連接至導電結構140。特別一提的是,金屬燒結層180可以包含例如銀等具備高熱傳導係數的金屬材料,藉以提升將電子元件160的熱傳導至導電結構140的效率。 The embedded component circuit board 100 further includes a metal sintered layer 180 disposed on the bottom surface 142b of the recess 142 and located between the conductive structure 140 and the electronic component 160. In other words, the electronic component 160 is electrically connected to the conductive structure 140 via the metal sintered layer 180. It is worth noting that the metal sintered layer 180 may include a metal material with a high thermal conductivity, such as silver, to improve the efficiency of transferring heat from the electronic component 160 to the conductive structure 140.

導電結構140還包含金屬層144a與144b以及導熱絕緣層146。金屬層144a連接電子元件160,導熱絕緣層146設置於金屬層144a上,而金屬層144b設置於導熱絕緣層146上。詳細來說,金屬層144a位於導熱絕緣層146以及線路基板120的線路層122a之間,而導熱絕緣層146位於金屬層144a以及金屬層144b之間。 Conductive structure 140 further includes metal layers 144a and 144b and a thermally conductive insulation layer 146. Metal layer 144a is connected to electronic component 160, thermally conductive insulation layer 146 is disposed on metal layer 144a, and metal layer 144b is disposed on thermally conductive insulation layer 146. Specifically, metal layer 144a is located between thermally conductive insulation layer 146 and circuit layer 122a of circuit substrate 120, while thermally conductive insulation layer 146 is located between metal layer 144a and metal layer 144b.

由於端面140e與凹槽142分別設置於導電結 構140的相對兩側,故導電結構140的凹槽142位於金屬層144a,而導電結構140的端面140e則位於金屬層144b。值得一提的是,導熱絕緣層146完全隔絕金屬層144a與144b。因此,金屬層144a以及金屬層144b之間無直接電性連接。換句話說,金屬層144a以及金屬層144b兩者彼此分離而不接觸,且電流無法通過其他導體而在金屬層144a以及金屬層144b之間傳遞。 Because end surface 140e and groove 142 are located on opposite sides of conductive structure 140, groove 142 of conductive structure 140 is located in metal layer 144a, while end surface 140e of conductive structure 140 is located in metal layer 144b. It is worth noting that thermally conductive insulation layer 146 completely isolates metal layers 144a and 144b. Therefore, there is no direct electrical connection between metal layers 144a and 144b. In other words, metal layers 144a and 144b are isolated from each other and do not touch each other, and current cannot be transferred between metal layers 144a and 144b through other conductors.

金屬層144a與144b的材料可以包含具備高熱傳導係數的導電材料,例如銅。導熱絕緣層146的材料可以是熱傳導係數大於10W/mk的有機絕緣材料,例如導熱膠或其類似物。除此之外,在本實施例中,導電結構140的端面140e暴露於線路基板120的第二表面120s。如此一來,利於將電子元件160所產生的熱向外傳導。換言之,可以提升電子元件160產生的熱通過導電結構140的金屬層144a、導熱絕緣層146以及金屬層144b而朝向第二表面120s傳導的速率。 The metal layers 144a and 144b can be made of a conductive material with a high thermal conductivity, such as copper. The thermally conductive insulating layer 146 can be made of an organic insulating material with a thermal conductivity greater than 10 W/mK, such as thermally conductive adhesive or the like. Furthermore, in this embodiment, the end surface 140e of the conductive structure 140 is exposed to the second surface 120s of the circuit substrate 120. This facilitates the outward conduction of heat generated by the electronic component 160. In other words, the rate at which heat generated by the electronic component 160 is conducted toward the second surface 120s through the metal layer 144a, the thermally conductive insulating layer 146, and the metal layer 144b of the conductive structure 140 is increased.

內埋元件電路板100還可以包含多個導電埋孔103v以及導電盲孔113v,導電結構140以及電子元件160分別通過導電埋孔103v連接至線路層122b,而線路層122b通過導電盲孔113v連接至線路層122a。因此,導電結構140(以及電子元件160)電性連接至線路基板120。 Embedded component circuit board 100 may also include a plurality of conductive buried vias 103v and conductive blind vias 113v. Conductive structure 140 and electronic component 160 are connected to circuit layer 122b via conductive buried vias 103v, respectively. Circuit layer 122b is connected to circuit layer 122a via conductive blind vias 113v. Thus, conductive structure 140 (and electronic component 160) are electrically connected to circuit substrate 120.

特別一提的是,內埋元件電路板100還可包含 至少一層防焊層110(solder mask)。防焊層110可以覆蓋於線路層122a以及線路層122e上,藉以降低線路層122a以及線路層122e在焊接製程中受到焊料汙染。另一方面,內埋元件電路板100還可以包含電鍍通孔190(Plating Through Hole;PTH)。電鍍通孔190連通內埋元件電路板100的相對兩側,且內埋元件電路板100內的各個線路層(即線路層122a、122b、122c、122d與122e)可以通過電鍍通孔190而互相電性連接。 It is worth noting that the embedded component circuit board 100 may also include at least one layer of solder mask 110. Solder mask 110 may cover the circuit layers 122a and 122e to reduce solder contamination during the soldering process. Furthermore, the embedded component circuit board 100 may also include plating through holes (PTHs) 190. These PTHs connect opposite sides of the embedded component circuit board 100, and the various circuit layers within the embedded component circuit board 100 (i.e., circuit layers 122a, 122b, 122c, 122d, and 122e) may be electrically connected to each other via the PTHs 190.

本發明至少一實施例提供一種內埋元件電路板的製造方法,以內埋元件電路板100為例,此製造方法可以包含如圖2A至圖2B、圖3A至圖3F以及圖4A至圖4B所示的數個步驟。請參考圖2A,首先,提供線路基板210。在線路基板230上設置線路基板210以及兩層接合基板250,其中接合基板250位於線路基板210以及線路基板230之間。 At least one embodiment of the present invention provides a method for manufacturing an embedded component circuit board. Taking embedded component circuit board 100 as an example, this method may include several steps as shown in Figures 2A-2B, 3A-3F, and 4A-4B. Referring to Figure 2A, a circuit substrate 210 is first provided. Circuit substrate 210 and two bonding substrates 250 are then disposed on circuit substrate 230, with bonding substrates 250 positioned between circuit substrate 210 and circuit substrate 230.

線路基板210相似於線路基板230,亦即,線路基板210與線路基板230皆包含兩層線路層以及位於兩層線路層之間的一層絕緣層。以線路基板210為例,其形成方式包含:對一般的銅箔基板(Copper Clad Laminate,CCL)上的金屬層(未繪示)進行圖案化,以形成位於絕緣層124a兩側的線路層122b以及線路層122c。特別一提的是,雖然本實施例是以兩層線路基板(即線路基板210與230)作為說明,但本發明不限 於此。在各式各樣的實施例中,線路基板的數量也可以是一個以上的任意數量,例如三個。 Circuit substrate 210 is similar to circuit substrate 230. That is, both circuit substrates 210 and 230 include two circuit layers and an insulating layer located between the two circuit layers. For example, circuit substrate 210 is formed by patterning a metal layer (not shown) on a conventional copper clad laminate (CCL) to form circuit layers 122b and 122c located on either side of insulating layer 124a. It is important to note that while this embodiment illustrates a two-layer circuit substrate (i.e., circuit substrates 210 and 230), the present invention is not limited thereto. In various embodiments, the number of circuit substrates may be any number, one or more, such as three.

接著,如圖2A所示,可以通過例如機械切割或者雷射開槽的方式,移除線路基板210的一部分、線路基板230的一部分以及接合基板250的一部分,以在線路基板210、線路基板230以及接合基板250中形成開口270。開口270連通線路基板210、線路基板230以及接合基板250。換言之,開口270連通線路基板210、線路基板230以及接合基板250的堆疊結構(未標示)的相對兩側。雖然本實施例以形成兩個開口270為例,但本發明不限於此。在其他實施例中,也可以形成一個以上的開口270,例如形成三個開口270。 Next, as shown in FIG2A , a portion of circuit substrate 210, a portion of circuit substrate 230, and a portion of bonding substrate 250 can be removed, for example, by mechanical cutting or laser grooving, to form openings 270 in circuit substrate 210, circuit substrate 230, and bonding substrate 250. Openings 270 connect circuit substrate 210, circuit substrate 230, and bonding substrate 250. In other words, openings 270 connect opposite sides of the stacked structure (not shown) of circuit substrate 210, circuit substrate 230, and bonding substrate 250. While this embodiment uses two openings 270 as an example, the present invention is not limited thereto. In other embodiments, more than one opening 270, for example, three openings 270, may be formed.

接著請參考圖2B,提供內埋結構290,並且在每一個開口270內設置一個內埋結構290。內埋結構290包含如圖1中所繪示的導電結構140以及電子元件160。電子元件160的汲極160d設置於導電結構140的凹槽142的底面142b,而電子元件160的源極160s以及閘極160g則遠離凹槽142的底面142b而設置。 Referring to FIG. 2B , a buried structure 290 is provided, and one buried structure 290 is disposed within each opening 270 . The buried structure 290 includes the conductive structure 140 and the electronic component 160 shown in FIG. The drain 160 d of the electronic component 160 is disposed on the bottom surface 142 b of the recess 142 of the conductive structure 140 , while the source 160 s and gate 160 g of the electronic component 160 are disposed away from the bottom surface 142 b of the recess 142 .

在本實施例中,內埋結構290的形成方式包含圖3A至圖3F所繪示的數個步驟。首先,請參考圖3A,提供導電基板340,此導電基板340包含兩層金屬層344a與344b以及位於金屬層344a與344b之間的導熱絕緣層346。特別一提的是,導電基板340的形成方式可以包含:通過例如厚銅電鍍(Thick Copper)的 方式,在導熱絕緣層346的相對兩側分別形成金屬層344a與344b。 In this embodiment, the embedded structure 290 is formed by the steps shown in Figures 3A to 3F. First, referring to Figure 3A , a conductive substrate 340 is provided. This conductive substrate 340 includes two metal layers 344a and 344b, and a thermally conductive insulation layer 346 located between the metal layers 344a and 344b. Specifically, the conductive substrate 340 can be formed by forming the metal layers 344a and 344b on opposite sides of the thermally conductive insulation layer 346, for example, using thick copper plating.

導電基板340的厚度可以落在635μm至2385μm的範圍之間。詳細來說,金屬層344a的厚度可以落在500μm至2000μm的範圍之間,金屬層344b的厚度可以落在35μm至210μm的範圍之間,而導熱絕緣層346的厚度可以落在100μm至175μm的範圍之間。 The thickness of the conductive substrate 340 can range from 635 μm to 2385 μm. Specifically, the thickness of the metal layer 344 a can range from 500 μm to 2000 μm, the thickness of the metal layer 344 b can range from 35 μm to 210 μm, and the thickness of the thermally conductive insulation layer 346 can range from 100 μm to 175 μm.

接著,請參考圖3B,可以通過例如機械(例如,CNC加工)或者雷射開槽的方式,移除導電基板340的一部分,以在導電基板340上形成至少一個凹槽142(本實施例以兩個凹槽142為例)。凹槽142位於導電基板340的金屬層344a。 Next, referring to FIG. 3B , a portion of the conductive substrate 340 can be removed by, for example, mechanical machining (e.g., CNC machining) or laser grooving to form at least one groove 142 (two grooves 142 are used as an example in this embodiment) on the conductive substrate 340 . The groove 142 is located in the metal layer 344a of the conductive substrate 340 .

接著,請參考圖3C,在導電基板340的凹槽142內設置電子元件160。在導電結構140的凹槽142內設置電子元件160的步驟包含:在凹槽142的底面142b設置金屬燒結材料(未繪示),並且在金屬燒結材料上設置電子元件160。接著,通過加熱的方式使金屬燒結材料附著於凹槽142的底面142b以及電子元件160之間,以形成連接電子元件160與導電基板340的金屬燒結層180。 Next, referring to Figure 3C , an electronic component 160 is disposed within the recess 142 of the conductive substrate 340 . The process of disposing the electronic component 160 within the recess 142 of the conductive structure 140 includes: disposing a metal sintered material (not shown) on the bottom surface 142b of the recess 142 and placing the electronic component 160 on the metal sintered material. Subsequently, the metal sintered material is heated to adhere between the bottom surface 142b of the recess 142 and the electronic component 160, forming a metal sintered layer 180 connecting the electronic component 160 to the conductive substrate 340.

在凹槽142內設置電子元件160之後,請參考圖3D,通過例如熱壓接合的方式,在導電基板340的表面340s上貼合至少一層接合基板350(圖3D是以 貼合兩層接合基板作為舉例說明)以及一層金屬層322b,以使接合基板350形成如圖1所繪示的絕緣材料126,且絕緣材料126以及金屬層322b覆蓋電子元件160以及凹槽142。絕緣材料126位於金屬層322b以及導電基板340之間。 After the electronic component 160 is placed in the groove 142, refer to Figure 3D . At least one bonding substrate 350 (Figure 3D illustrates the bonding of two bonding substrates) and a metal layer 322b are bonded to the surface 340s of the conductive substrate 340, for example, by thermal compression bonding. This allows the bonding substrate 350 to form the insulating material 126 shown in Figure 1 . The insulating material 126 and the metal layer 322b cover the electronic component 160 and the groove 142. The insulating material 126 is located between the metal layer 322b and the conductive substrate 340.

在導電基板340的表面340s上貼合接合基板350以及金屬層322b之後,請參考圖3E,可以通過機械研磨、機械鑽孔以及電鍍的方式,在絕緣材料126以及金屬層322b(繪示於圖3D)中形成多個如圖1所示的導電埋孔103v。金屬層322b通過這些導電埋孔103v電性連接至導電基板340以及電子元件160。在形成導電埋孔103v之後,可以通過例如微影以及蝕刻的方式,圖案化金屬層322b,以形成線路層322(即圖1中線路層122b的一部分)。 After bonding the bonding substrate 350 and the metal layer 322b to the surface 340s of the conductive substrate 340, referring to Figure 3E , a plurality of conductive buried vias 103v, as shown in Figure 1, can be formed in the insulating material 126 and the metal layer 322b (shown in Figure 3D ) through mechanical grinding, mechanical drilling, and electroplating. The metal layer 322b is electrically connected to the conductive substrate 340 and the electronic component 160 via these conductive buried vias 103v. After forming the conductive buried vias 103v, the metal layer 322b can be patterned through methods such as lithography and etching to form the circuit layer 322 (i.e., a portion of the circuit layer 122b in Figure 1 ).

在形成線路層322之後,請參考圖3F,通過例如機械切割、雷射切割或離子束切割等方式的方式,沿著線路層322的法線N1切割線路層322、絕緣材料126以及導電基板340,以形成多個完全彼此分離的內埋結構290。在切割過程中,切割裝置p依序通過線路層322、絕緣材料126以及導電基板340,且切割裝置p可以是切割刀具、雷射光束或離子束。 After forming the circuit layer 322, referring to Figure 3F, the circuit layer 322, the insulating material 126, and the conductive substrate 340 are cut along the normal line N1 of the circuit layer 322, such as by mechanical cutting, laser cutting, or ion beam cutting, to form a plurality of completely separated embedded structures 290. During the cutting process, a cutting device p sequentially passes through the circuit layer 322, the insulating material 126, and the conductive substrate 340. The cutting device p can be a cutting tool, a laser beam, or an ion beam.

接著,請回到圖2B,在開口270內設置內埋結構290的步驟包含:在線路基板230的表面230s上貼合膠帶205(例如,聚乙烯對苯二甲酸酯膠帶)或其相 似物。線路基板230位於膠帶205以及接合基板250之間,且膠帶205與開口270重疊。在線路基板230的表面230s貼合膠帶205之後,將通過圖3A至圖3F的一系列步驟所形成的內埋結構290設置於膠帶205上且導電結構140的凹槽142的開口背對膠帶205。 Next, referring back to Figure 2B , the step of disposing embedded structure 290 within opening 270 includes laminating tape 205 (e.g., polyethylene terephthalate tape) or the like onto surface 230s of circuit substrate 230. Circuit substrate 230 is positioned between tape 205 and bonding substrate 250, with tape 205 overlapping opening 270. After laminating tape 205 onto surface 230s of circuit substrate 230, embedded structure 290 formed through the steps of Figures 3A to 3F is positioned on tape 205, with the opening of recess 142 of conductive structure 140 facing away from tape 205.

在開口270內設置內埋結構290之後,請參考圖4A,在線路基板210上設置至少一層接合基板450以及一層金屬層422,以使接合基板450以及金屬層422覆蓋內埋結構290,其中圖4A是以設置兩層接合基板450作為舉例說明。接合基板450位於金屬層422以及線路基板210之間。接著,透過熱壓接合的方式,壓合線路基板210、接合基板250、線路基板230、接合基板450以及金屬層422,以形成初始線路基板420。 After the embedded structure 290 is disposed within the opening 270, refer to Figure 4A . At least one bonding substrate 450 and one metal layer 422 are disposed on the circuit substrate 210, such that the bonding substrate 450 and the metal layer 422 cover the embedded structure 290. Figure 4A illustrates the arrangement of two bonding substrates 450. The bonding substrate 450 is positioned between the metal layer 422 and the circuit substrate 210. Subsequently, the circuit substrate 210, bonding substrate 250, circuit substrate 230, bonding substrate 450, and metal layer 422 are pressed together by thermal compression to form the initial circuit substrate 420.

值得一提的是,請一併參考圖2B以及圖4B開口270的寬度w1與內埋結構290的寬度w2之間的差距大於0.4mm。因此,開口270的內側表面與內埋結構290的側表面之間會形成間隙(未標示)。接合基板250、350與450可以是包含低膨脹係數的材料的膠片(prepreg),且上述接合基板的玻璃轉化溫度(glass transition temperature;Tg)可以落在200℃至230℃的範圍之間。因此,當熱壓接合的製程溫度達到(甚或超過)100℃至140℃的範圍時,接合基板受熱而呈流體狀態,並且會填補於開口270的內側表面以及 內埋結構290的側表面之間的間隙。此外,為了達到較佳的絕緣效果,在部分實施例中,接合基板250(或接合基板350或接合基板450)的數量可以是兩個以上。 It is worth noting that, referring to both Figures 2B and 4B , the difference between the width w1 of opening 270 and the width w2 of embedded structure 290 is greater than 0.4 mm. Consequently, a gap (not shown) forms between the inner surface of opening 270 and the side surface of embedded structure 290. Bonding substrates 250, 350, and 450 may be prepregs made of a low-expansion material, and the glass transition temperature ( Tg ) of these bonding substrates may be within the range of 200°C to 230°C. Therefore, when the process temperature of the thermal compression bonding reaches (or even exceeds) the range of 100°C to 140°C, the bonding substrate is heated and becomes fluid, filling the gap between the inner surface of the opening 270 and the side surface of the embedded structure 290. Furthermore, to achieve better insulation, in some embodiments, the number of bonding substrates 250 (or bonding substrates 350 or bonding substrates 450) may be two or more.

在本實施例中,內埋元件電路板100的製造方法還包含:在形成初始線路基板420之後,可移除膠帶205,以暴露出導電結構140的端面140e,且線路基板230的表面230s與導電結構140的端面140e齊平。 In this embodiment, the method for manufacturing the embedded component circuit board 100 further includes: after forming the initial circuit substrate 420, the tape 205 may be removed to expose the end surface 140e of the conductive structure 140, and the surface 230s of the circuit substrate 230 is flush with the end surface 140e of the conductive structure 140.

請參考圖4B,在形成初始線路基板420之後,可以通過機械研磨、機械鑽孔以及電鍍的方式,在初始線路基板420中形成多個導電盲孔113v。金屬層422通過這些導電盲孔113v電性連接至內埋結構290(標示於圖)。 Referring to Figure 4B , after forming the initial circuit substrate 420, a plurality of conductive blind vias 113v can be formed in the initial circuit substrate 420 through mechanical grinding, mechanical drilling, and electroplating. The metal layer 422 is electrically connected to the embedded structure 290 (indicated in the figure) through these conductive blind vias 113v.

在形成導電盲孔113v之後,可以通過微影及蝕刻的方式,圖案化金屬層422,以形成圖1中所繪示的線路層122a,並且使初始線路基板420形成如圖1中所繪示的線路基板120。本實施例的內埋元件電路板100的製造方法還包含在圖案化金屬層422以形成線路層122a之後,可以通過例如機械鑽孔(drilling)以及電鍍的方式,在線路基板120內形成電鍍通孔190。至此,已大致形成如圖1所繪示的內埋元件電路板100。 After forming the conductive blind vias 113v, the metal layer 422 can be patterned through lithography and etching to form the circuit layer 122a shown in FIG. This converts the initial circuit substrate 420 into the circuit substrate 120 shown in FIG. The method for manufacturing the embedded component circuit board 100 of this embodiment further includes forming plated through-holes 190 in the circuit substrate 120 through methods such as mechanical drilling and electroplating after patterning the metal layer 422 to form the circuit layer 122a. At this point, the embedded component circuit board 100 shown in FIG. 1 is substantially formed.

綜上所述,當內埋元件電路板中的電子元件的源極(以及閘極)與汲極分別位於電子元件的相對兩側時, 通過在線路基板中設置具有凹槽的導電結構,並且將電子元件設置於導電結構的凹槽內,以將電子元件的源極與汲極皆電性連接至線路基板的同一側。換句話而言,電子元件的源極連接至位於線路基板其中一側的線路層,而電子元件的汲極則連接至導電結構。因為導電結構被限制於僅能電性連接至上述線路層,所以電子元件的汲極亦僅能(通過導電結構)連接至此線路層。如此一來,由於電子元件的源極以及汲極皆電性連接至線路基板同一側,可以提升在電路板的製程中進行電性量測的方便性,進而提高電路板的製程良率。 In summary, when the source (and gate) and drain of an electronic component in an embedded component circuit board are located on opposite sides of the electronic component, a conductive structure with a recess is provided in the circuit substrate, and the electronic component is placed within the recess of the conductive structure. This allows both the source and drain of the electronic component to be electrically connected to the same side of the circuit substrate. In other words, the source of the electronic component is connected to a circuit layer located on one side of the circuit substrate, while the drain of the electronic component is connected to the conductive structure. Because the conductive structure is limited to electrically connecting to the aforementioned circuit layer, the drain of the electronic component can also be connected (through the conductive structure) only to this circuit layer. In this way, since the source and drain of the electronic component are both electrically connected to the same side of the circuit substrate, it can improve the convenience of performing electrical measurements during the circuit board manufacturing process, thereby improving the circuit board process yield.

另一方面,導電結構的端面暴露於線路基板的表面,由於電子元件連接於導電結構,故可以提升電子元件產生的熱量經由導電結構傳遞至外界環境的速率,從而提升了內埋電子元件電路板的散熱的效率。如此一來,便能減少堆積於電子元件的熱能,有助於增加電子元件的壽命。 On the other hand, the end faces of the conductive structure are exposed on the surface of the circuit substrate. Since the electronic components are connected to the conductive structure, the rate at which heat generated by the electronic components is transferred to the external environment through the conductive structure is increased, thereby improving the heat dissipation efficiency of the circuit board with embedded electronic components. This reduces the heat energy accumulated in the electronic components and helps to increase the lifespan of the electronic components.

雖然本發明之實施例已揭露如上,然其並非用以限定本發明之實施例,任何所屬技術領域中具有通常知識者,在不脫離本發明之實施例的精神和範圍內,當可作些許的更動與潤飾,故本發明之實施例的保護範圍當視後附的申請專利範圍所界定者為準。 Although the embodiments of the present invention have been disclosed above, they are not intended to limit the embodiments of the present invention. Anyone with ordinary skill in the art may make minor changes and modifications without departing from the spirit and scope of the embodiments of the present invention. Therefore, the scope of protection of the embodiments of the present invention shall be determined by the scope of the attached patent application.

100:內埋元件電路板 100: Embedded component circuit board

103v:導電埋孔 103v: Conductive buried vias

110:防焊層 110: Solder mask

113v:導電盲孔 113v: Conductive blind vias

120:線路基板 120:Circuit substrate

120f,120s:表面 120f, 120s: Surface

122a,122b,122c,122d,122e:線路層 122a, 122b, 122c, 122d, 122e: Circuit layer

124a,124b:絕緣層 124a,124b: Insulating layer

126:絕緣材料 126: Insulation Materials

140:導電結構 140:Conductive structure

140e:端面 140e: End face

142:凹槽 142: Groove

142b:底面 142b: Bottom surface

144a,144b:金屬層 144a,144b: Metal layer

146:導熱絕緣層 146: Thermal insulation layer

160:電子元件 160: Electronic components

160d:汲極 160d: Drain

160g:閘極 160g: Gate

160s:源極 160s: Source

165:主體 165: Subject

165f,165s:平面 165f, 165s: plane

180:金屬燒結層 180: Metal sintered layer

190:電鍍通孔 190: Electroplated through-holes

Claims (9)

一種內埋元件電路板,包含: 一線路基板,包含: 一線路層,設置於所述線路基板的一第一表面; 一導電結構,內埋於所述線路基板中,並且電性連接至所述線路基板的所述線路層,其中所述導電結構具有一凹槽,而所述凹槽的開口朝向所述線路基板的所述第一表面,其中所述導電結構還包含: 一第一金屬層,其中所述導電結構的所述凹槽位於所述第一金屬層; 一導熱絕緣層,設置於所述第一金屬層上,其中所述第一金屬層位於所述導熱絕緣層以及所述線路基板的所述線路層之間;以及 一第二金屬層,設置於所述導熱絕緣層上,且所述導電結構的一端面位於所述第二金屬層,其中所述導熱絕緣層位於所述第一金屬層以及所述第二金屬層之間,且所述第二金屬層以及所述第一金屬層之間無直接電性連接;以及 一電子元件,連接所述第一金屬層且設置於所述導電結構的所述凹槽內,其中所述電子元件的一源極以及一閘極電性連接至所述線路層,而所述電子元件的一汲極電性連接至所述導電結構,且所述汲極遠離所述第一表面而設置。 A circuit board with embedded components comprises: A circuit substrate comprising: A circuit layer disposed on a first surface of the circuit substrate; A conductive structure embedded in the circuit substrate and electrically connected to the circuit layer of the circuit substrate, wherein the conductive structure has a groove with an opening facing the first surface of the circuit substrate, wherein the conductive structure further comprises: A first metal layer, wherein the groove of the conductive structure is located in the first metal layer; A thermally conductive insulating layer disposed on the first metal layer, wherein the first metal layer is located between the thermally conductive insulating layer and the circuit layer of the circuit substrate; and A second metal layer disposed on the thermally conductive insulating layer, with an end surface of the conductive structure located on the second metal layer, wherein the thermally conductive insulating layer is located between the first metal layer and the second metal layer, and there is no direct electrical connection between the second metal layer and the first metal layer; and an electronic component connected to the first metal layer and disposed in the recess of the conductive structure, wherein a source and a gate of the electronic component are electrically connected to the circuit layer, and a drain of the electronic component is electrically connected to the conductive structure, and the drain is located away from the first surface. 如請求項1所述的內埋元件電路板,其中所述線路基板還包含: 一絕緣材料,包覆所述導電結構以及所述電子元件,其中所述線路層覆蓋所述絕緣材料,且所述絕緣材料的一部分位於所述線路層以及所述導電結構的所述凹槽之間。 The embedded component circuit board of claim 1, wherein the circuit substrate further comprises: An insulating material covering the conductive structure and the electronic component, wherein the circuit layer covers the insulating material, and a portion of the insulating material is located between the circuit layer and the groove of the conductive structure. 如請求項1所述的內埋元件電路板,其中所述電子元件還包含: 一主體,設置於所述凹槽的一底面上,其中所述電子元件的所述源極以及所述閘極位於所述主體的一第一平面,且所述電子元件的所述汲極位於所述主體的一第二平面,其中所述第一平面與所述第二平面分別位於所述主體的相對兩側,且所述第二平面面對所述凹槽的所述底面。 The embedded component circuit board of claim 1, wherein the electronic component further comprises: A body disposed on a bottom surface of the recess, wherein the source and gate of the electronic component are located on a first plane of the body, and the drain of the electronic component is located on a second plane of the body, wherein the first plane and the second plane are located on opposite sides of the body, and the second plane faces the bottom surface of the recess. 如請求項3所述的內埋元件電路板,還包含: 一金屬燒結層,設置於所述凹槽的所述底面上,並且位於所述導電結構以及所述電子元件之間,其中所述電子元件通過所述金屬燒結層而電性連接至所述導電結構。 The embedded component circuit board of claim 3 further comprises: A metal sintered layer disposed on the bottom surface of the recess and between the conductive structure and the electronic component, wherein the electronic component is electrically connected to the conductive structure via the metal sintered layer. 如請求項1所述的內埋元件電路板,其中所述導電結構的所述端面暴露於所述線路基板的一第二表面,且所述線路基板的所述第一表面以及所述第二表面分別位於所述線路基板的相對兩側。The embedded component circuit board as described in claim 1, wherein the end surface of the conductive structure is exposed on a second surface of the circuit substrate, and the first surface and the second surface of the circuit substrate are respectively located on opposite sides of the circuit substrate. 如請求項1所述的內埋元件電路板,其中所述導熱絕緣層的熱傳導係數大於10W/mk。The embedded component circuit board as described in claim 1, wherein the thermal conductivity coefficient of the thermally conductive insulation layer is greater than 10W/mK. 一種內埋元件電路板的製造方法,包含: 提供一第一線路基板; 在所述第一線路基板上設置一第二線路基板以及至少一層第一接合基板,其中所述第一接合基板位於所述第一線路基板以及所述第二線路基板之間; 移除所述第一線路基板的一部分、所述第二線路基板的一部分以及所述第一接合基板的一部分,以在所述第一線路基板、所述第二線路基板以及所述第一接合基板中形成一開口,其中所述開口連通所述第一線路基板、所述第二線路基板以及所述第一接合基板; 提供一內埋結構,且所述內埋結構包含: 一導電結構,且所述導電結構具有一凹槽,其中所述導電結構還包含: 一第一金屬層,其中所述導電結構的所述凹槽位於所述第一金屬層; 一導熱絕緣層,設置於所述第一金屬層上;以及 一第二金屬層,設置於所述導熱絕緣層上,且所述導電結構的一端面位於所述第二金屬層,其中所述導熱絕緣層位於所述第一金屬層以及所述第二金屬層之間,且所述第二金屬層以及所述第一金屬層之間無直接電性連接;以及 一電子元件,連接所述第一金屬層且設置於所述導電結構的所述凹槽內,其中所述電子元件的一汲極設置於所述凹槽的一底面,而所述電子元件的一源極以及一閘極遠離所述凹槽的所述底面而設置,其中所述電子元件的所述汲極電性連接至所述導電結構; 在所述開口內設置所述內埋結構; 在所述開口內設置所述內埋結構之後,在所述第一線路基板上設置至少一層第二接合基板以及一第三金屬層,以使所述第二接合基板以及所述第三金屬層覆蓋所述內埋結構,且所述第二接合基板位於所述第三金屬層以及所述第一線路基板之間; 壓合所述第一線路基板、所述第一接合基板、所述第二線路基板、所述第二接合基板以及所述第三金屬層,以形成一初始第三線路基板; 在形成所述初始第三線路基板之後,在所述初始第三線路基板中形成多個導電盲孔,其中所述第三金屬層通過所述導電盲孔電性連接至所述內埋結構;以及 在形成所述導電盲孔之後,圖案化所述第三金屬層,以形成一第一線路層,並且使所述初始第三線路基板形成一第三線路基板,其中所述第一線路層電性連接至所述導電結構以及所述電子元件,其中所述第一金屬層位於所述導熱絕緣層以及所述第三線路基板的所述第一線路層之間。 A method for manufacturing a circuit board with embedded components comprises: providing a first circuit substrate; disposing a second circuit substrate and at least one first bonding substrate on the first circuit substrate, wherein the first bonding substrate is located between the first circuit substrate and the second circuit substrate; removing a portion of the first circuit substrate, a portion of the second circuit substrate, and a portion of the first bonding substrate to form an opening in the first circuit substrate, the second circuit substrate, and the first bonding substrate, wherein the opening connects the first circuit substrate, the second circuit substrate, and the first bonding substrate; providing an embedded structure, wherein the embedded structure comprises: a conductive structure having a groove, wherein the conductive structure further comprises: a first metal layer, wherein the groove of the conductive structure is located in the first metal layer; a thermally conductive insulating layer disposed on the first metal layer; and A second metal layer disposed on the thermally conductive insulating layer, with an end surface of the conductive structure located on the second metal layer, wherein the thermally conductive insulating layer is located between the first metal layer and the second metal layer, and there is no direct electrical connection between the second metal layer and the first metal layer; and An electronic component connected to the first metal layer and disposed within the recess of the conductive structure, wherein a drain of the electronic component is disposed on a bottom surface of the recess, and a source and a gate of the electronic component are disposed remote from the bottom surface of the recess, wherein the drain of the electronic component is electrically connected to the conductive structure; The embedded structure is disposed within the opening; After the embedded structure is disposed within the opening, at least one second bonding substrate and a third metal layer are disposed on the first circuit substrate, such that the second bonding substrate and the third metal layer cover the embedded structure and the second bonding substrate is located between the third metal layer and the first circuit substrate. The first circuit substrate, the first bonding substrate, the second circuit substrate, the second bonding substrate, and the third metal layer are pressed together to form an initial third circuit substrate. After forming the initial third circuit substrate, a plurality of conductive blind vias are formed in the initial third circuit substrate, wherein the third metal layer is electrically connected to the embedded structure through the conductive blind vias. After forming the conductive blind vias, the third metal layer is patterned to form a first circuit layer, and the initial third circuit substrate is transformed into a third circuit substrate, wherein the first circuit layer is electrically connected to the conductive structure and the electronic component, and the first metal layer is located between the thermally conductive insulation layer and the first circuit layer of the third circuit substrate. 如請求項7所述的方法,其中所述內埋結構的形成方式包含: 提供一導電基板; 移除所述導電基板的一部分,以在所述導電基板上形成所述凹槽; 在所述導電基板的所述凹槽內設置所述電子元件; 在所述凹槽內設置所述電子元件之後,在所述導電基板的一第一表面上貼合至少一第三接合基板以及一第四金屬層,以使所述第三接合基板形成一絕緣材料,所述絕緣材料以及所述第四金屬層覆蓋所述電子元件以及所述凹槽,其中所述絕緣材料位於所述第四金屬層以及所述導電基板之間; 在所述導電基板的所述第一表面上貼合所述第三接合基板以及所述第四金屬層之後,在所述絕緣材料以及所述第四金屬層中形成多個導電埋孔,其中所述第四金屬層通過所述導電埋孔電性連接至所述導電基板以及所述電子元件; 在形成所述導電埋孔之後,圖案化所述第四金屬層,以形成一第二線路層;以及 在形成所述第二線路層之後,沿著所述第二線路層的一法線切割所述第二線路層、所述絕緣材料以及所述導電基板,以形成所述內埋結構。 The method of claim 7, wherein the embedded structure is formed by: providing a conductive substrate; removing a portion of the conductive substrate to form the recess on the conductive substrate; placing the electronic component in the recess of the conductive substrate; after placing the electronic component in the recess, attaching at least a third bonding substrate and a fourth metal layer to a first surface of the conductive substrate so that the third bonding substrate forms an insulating material, the insulating material and the fourth metal layer covering the electronic component and the recess, wherein the insulating material is located between the fourth metal layer and the conductive substrate; After laminating the third bonding substrate and the fourth metal layer to the first surface of the conductive substrate, a plurality of conductive buried vias are formed in the insulating material and the fourth metal layer, wherein the fourth metal layer is electrically connected to the conductive substrate and the electronic component through the conductive buried vias. After forming the conductive buried vias, the fourth metal layer is patterned to form a second circuit layer. After forming the second circuit layer, the second circuit layer, the insulating material, and the conductive substrate are cut along a normal to the second circuit layer to form the embedded structure. 如請求項7所述的方法,其中在所述開口內設置所述內埋結構包含: 在所述第二線路基板的一第二表面上貼合一膠帶,其中所述第二線路基板位於所述膠帶以及所述第一接合基板之間,且所述膠帶與所述開口重疊; 在所述第二線路基板的所述第二表面貼合所述膠帶之後,將所述內埋結構設置於所述膠帶上,其中所述導電結構的所述凹槽的開口背對所述膠帶;以及 在形成所述初始第三線路基板之後,移除所述膠帶,以暴露出所述導電結構的所述端面,且所述第二線路基板的所述第二表面與所述導電結構的所述端面齊平。 The method of claim 7, wherein disposing the embedded structure within the opening comprises: Attaching a tape to a second surface of the second circuit substrate, wherein the second circuit substrate is positioned between the tape and the first bonding substrate, and the tape overlaps the opening; After attaching the tape to the second surface of the second circuit substrate, disposing the embedded structure on the tape, wherein the opening of the recess of the conductive structure faces away from the tape; and After forming the initial third circuit substrate, removing the tape to expose the end surface of the conductive structure, with the second surface of the second circuit substrate being flush with the end surface of the conductive structure.
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WO2017122284A1 (en) * 2016-01-12 2017-07-20 株式会社メイコー Substrate with built-in component and method for manufacturing substrate with built-in component
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TW202406415A (en) * 2022-07-26 2024-02-01 大陸商鵬鼎控股(深圳)股份有限公司 Circuit board with embedded elements and method for fabricating the same
TWI836754B (en) * 2022-11-29 2024-03-21 先豐通訊股份有限公司 Circuit board with embedded component and method of fabricating the same

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Publication number Priority date Publication date Assignee Title
WO2017122284A1 (en) * 2016-01-12 2017-07-20 株式会社メイコー Substrate with built-in component and method for manufacturing substrate with built-in component
TW202344145A (en) * 2022-04-21 2023-11-01 先豐通訊股份有限公司 Package structure and circuit board assembly with embedded power chip
TW202406415A (en) * 2022-07-26 2024-02-01 大陸商鵬鼎控股(深圳)股份有限公司 Circuit board with embedded elements and method for fabricating the same
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