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TWI898349B - A hydrophilic coating, preparation method and device - Google Patents

A hydrophilic coating, preparation method and device

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Publication number
TWI898349B
TWI898349B TW112147956A TW112147956A TWI898349B TW I898349 B TWI898349 B TW I898349B TW 112147956 A TW112147956 A TW 112147956A TW 112147956 A TW112147956 A TW 112147956A TW I898349 B TWI898349 B TW I898349B
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hydrophilic coating
hydrophilic
plasma
chemical vapor
contact angle
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TW112147956A
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Chinese (zh)
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TW202426131A (en
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宗堅
陳海力
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大陸商江蘇菲沃泰納米科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/054Forming anti-misting or drip-proofing coatings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/056Forming hydrophilic coatings
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/152Deposition methods from the vapour phase by cvd

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

本發明的具體實施方式提供一種親水塗層、製備方法及器件,所述親水塗層由有機矽單體在具有氧氣的氣氛條件下通過熱絲化學氣相沉積於基材表面所形成,所述親水塗層具有優異的親水性能,其水接觸角在10°以下,並且,所述親水塗層在高濕環境下具有優異的親水保持性。 Specific embodiments of the present invention provide a hydrophilic coating, preparation method, and device. The hydrophilic coating is formed on a substrate surface by hot-wire chemical vapor deposition of organosilicon monomers in an oxygen atmosphere. The hydrophilic coating exhibits excellent hydrophilic properties, with a water contact angle below 10°. Furthermore, the hydrophilic coating maintains excellent hydrophilicity in high-humidity environments.

Description

一種親水塗層、製備方法及器件 A hydrophilic coating, preparation method, and device

本發明涉及熱絲化學氣相沉積領域,特別涉及一種熱絲化學氣相沉積的親水塗層、製備方法及器件。 The present invention relates to the field of hot wire chemical vapor deposition, and in particular to a hot wire chemical vapor deposition hydrophilic coating, preparation method, and device.

本發明要求於2022年12月22日提交中國專利局、申請號為2022116571892、發明名稱為“一種親水塗層、製備方法及器件”的中國專利申請的優先權,其全部內容通過引用結合在本發明中。 This invention claims priority to Chinese patent application No. 2022116571892, filed with the China Patent Office on December 22, 2022, and entitled “A hydrophilic coating, preparation method and device,” the entire contents of which are incorporated herein by reference.

在基材表面製備親水性高分子塗層是目前應用較廣泛的製備親水塗層的方法之一。該種親水性高分子塗層表面通常都含有大量親水性基團(-OH、-COOH和-NH2等能形成氫鍵的原子基團或離子基團),使得塗層能夠具有親水和吸水性質。 One of the most widely used methods for preparing hydrophilic coatings is to apply a hydrophilic polymer coating to a substrate surface. These hydrophilic polymer coatings typically contain a large number of hydrophilic groups (atomic or ionic groups capable of forming hydrogen bonds, such as -OH, -COOH, and -NH2), which impart hydrophilic and water-absorbing properties to the coating.

例如有文獻報導,在氮氣保護下將甲基丙烯酸羥乙酯、甲基丙烯酸、過氧化苯甲醯和乙二醇單乙醚的均勻混合液在65℃下反應6~8h,再將混合液濃度稀釋至10%,加入少量雙甲基丙烯酸乙二醇酯及過氧化苯甲醯,噴塗於基材表面室溫晾乾1-2h,最後在120℃下烘乾1~2h,冷卻至室溫就能得到超親水表面。但是這類帶有親水基團的高分子材料製備得到的超親水塗層表面耐磨性差、極不耐水浸泡,在高濕度環境下因塗層表面吸水飽和,水接觸角很容易就升高,導致塗層失去超親水性能。超親水性能的不耐水及不耐濕,大大降低了超親水塗層在防霧,自清潔等領域的應用。 For example, a literature report states that a superhydrophilic surface can be obtained by reacting a uniform mixture of hydroxyethyl methacrylate, methacrylic acid, benzoyl peroxide, and ethylene glycol monoethyl ether at 65°C for 6-8 hours under nitrogen. The mixture is then diluted to a 10% concentration, and a small amount of ethylene glycol dimethacrylate and benzoyl peroxide are added. The mixture is then sprayed onto the substrate surface and allowed to dry at room temperature for 1-2 hours. Finally, the mixture is dried at 120°C for 1-2 hours and cooled to room temperature. However, superhydrophilic coatings prepared from these hydrophilic polymers have poor wear resistance and are extremely resistant to water immersion. In high humidity environments, the coating surface absorbs water, which easily increases the water contact angle, causing the coating to lose its superhydrophilic properties. The lack of water and moisture resistance of super-hydrophilic coatings greatly reduces their application in anti-fog and self-cleaning applications.

本發明的具體實施方式提供一種具有優異親水性以及高濕環境下優異的親水保持性的親水塗層、製備方法及器件,具體方案如下: Specific embodiments of the present invention provide a hydrophilic coating, preparation method, and device with excellent hydrophilicity and excellent hydrophilicity retention in high-humidity environments. The specific scheme is as follows:

一種親水塗層,所述親水塗層的水接觸角在10°以下,所述親水塗層是 由有機矽單體在具有氧氣的氣氛條件下通過熱絲化學氣相沉積於基材表面所形成。 A hydrophilic coating having a water contact angle of less than 10° is provided. The hydrophilic coating is formed by depositing organosilicon monomers onto a substrate surface via hot-wire chemical vapor deposition in an oxygen atmosphere.

可選的,所述親水塗層的水接觸角在5°以下。 Optionally, the water contact angle of the hydrophilic coating is below 5°.

可選的,所述親水塗層在常溫下於水中浸泡120分鐘後的水接觸角在10°以下。 Optionally, the hydrophilic coating has a water contact angle of less than 10° after being immersed in water at room temperature for 120 minutes.

可選的,所述有機矽單體選自於下式(1)~(3)中結構的至少一種, Optionally, the organic silicon monomer is selected from at least one of the structures in the following formulas (1) to (3).

上式(1)~(3)中,R1、R5和R9分別獨立的選自於C1-C10的烷基或C1-C10的烷氧基,R2、R3、R4、R6和R10分別獨立的選自於氫原子、C1-C10的烷基或C1-C10的烷氧基,R7為氫原子、羥基、C1-C10的烷基或C1-C10的烷氧基,R8為氫原子或C1-C10的烷基,n為1到10的整數,m為1到10的整數。 In formulas (1) to (3), R1 , R5 , and R9 are independently selected from C1 - C10 alkyl groups or C1- C10 alkoxy groups; R2 , R3 , R4 , R6 , and R10 are independently selected from hydrogen atom, C1 - C10 alkyl groups, or C1 - C10 alkoxy groups; R7 is a hydrogen atom, a hydroxyl group, a C1 - C10 alkyl group, or a C1 - C10 alkoxy group; R8 is a hydrogen atom or a C1 - C10 alkyl group; n is an integer from 1 to 10; and m is an integer from 1 to 10.

可選的,所述有機矽單體為式(1)所示結構,R1、R2、R3和R4分別獨立的選自於C1-C4的烷氧基。 Optionally, the organosilicon monomer has a structure represented by formula (1), and R 1 , R 2 , R 3 and R 4 are independently selected from C 1 -C 4 alkoxy groups.

可選的,所述有機矽單體為正矽酸乙酯、四甲氧基矽烷、正矽酸丙酯或正矽酸丁酯。 Optionally, the organosilicon monomer is ethyl orthosilicate, tetramethoxysilane, propyl orthosilicate or butyl orthosilicate.

可選的,所述有機矽單體的沸點在200℃以下。 Optionally, the boiling point of the organosilicon monomer is below 200°C.

可選的,所述親水塗層的厚度為5~3000nm。 Optionally, the thickness of the hydrophilic coating is 5 to 3000 nm.

一種如上所述親水塗層的製備方法,包括以下步驟: A method for preparing the hydrophilic coating as described above comprises the following steps:

將基材放置於真空沉積室的具有冷卻裝置的樣品台上; Place the substrate on a sample stage with a cooling device in a vacuum deposition chamber;

對真空沉積室抽真空,通入氧氣、惰性氣體和有機矽單體氣體,開啟加熱絲加熱以及所述冷卻裝置進行所述熱絲化學氣相沉積。 The vacuum deposition chamber is evacuated, oxygen, inert gas, and organosilicon monomer gas are introduced, the heating wire is heated, and the cooling device is turned on to perform the hot wire chemical vapor deposition.

可選的,所述加熱絲為含有鎳、鉻或鎢中的至少一種的金屬絲。 Optionally, the heating wire is a metal wire containing at least one of nickel, chromium or tungsten.

可選的,所述樣品台的溫度控制在100℃以下,加熱絲的溫度為200~900℃。 Optionally, the temperature of the sample stage is controlled below 100°C, and the temperature of the heating wire is 200-900°C.

可選的,還包括以下步驟:在所述熱絲化學氣相沉積前,對基 材表面進行等離子體前處理。 Optionally, the method further includes the following step: performing plasma pre-treatment on the substrate surface before the hot-wire chemical vapor deposition.

可選的,還包括以下步驟:在所述熱絲化學氣相沉積後,在氧氣氣氛下,對所述熱絲化學氣相沉積的塗層表面進行等離子體後處理。 Optionally, the method further includes the following step: after the hot wire chemical vapor deposition, performing plasma post-treatment on the surface of the hot wire chemical vapor deposition coating in an oxygen atmosphere.

可選的,所述等離子體為雙電極脈衝等離子體。 Optionally, the plasma is a bi-electrode pulsed plasma.

一種器件,所述器件的至少部分表面具有如上所述的親水塗層。 A device, at least part of the surface of which has the hydrophilic coating as described above.

本發明具體實施方式的親水塗層,所述親水塗層由有機矽單體在具有氧氣的氣氛條件下通過熱絲化學氣相沉積於基材表面所形成,所述親水塗層具有優異的親水性能,其水接觸角在10°以下,並且,所述親水塗層在高濕環境下具有優異的親水保持性。 The hydrophilic coating of a specific embodiment of the present invention is formed on the substrate surface by hot-wire chemical vapor deposition of organosilicon monomers in an oxygen atmosphere. The hydrophilic coating has excellent hydrophilic properties, with a water contact angle of less than 10°. Furthermore, the hydrophilic coating maintains excellent hydrophilicity in high humidity environments.

圖1 為實施例1的防霧測試結果圖; Figure 1 shows the anti-fog test results of Example 1;

圖2 為實施例2的防霧測試結果圖; Figure 2 shows the anti-fog test results of Example 2;

圖3 為實施例3的防霧測試結果圖。 Figure 3 shows the anti-fog test results of Example 3.

本發明的具體實施方式提供一種親水塗層,所述親水塗層的水接觸角在10°以下,所述親水塗層是由有機矽單體在具有氧氣的氣氛條件下通過熱絲化學氣相沉積於基材表面所形成。 A specific embodiment of the present invention provides a hydrophilic coating having a water contact angle of less than 10°. The hydrophilic coating is formed by depositing an organosilicon monomer onto a substrate surface via hot-wire chemical vapor deposition in an oxygen atmosphere.

本發明具體實施方式的親水塗層,通過熱絲化學氣相沉積,所述有機矽單體在氧氣氣氛條件下,在加熱金屬熱絲的催化反應下,可在基材表面形成優異的親水塗層,並且所述親水塗層在高濕環境下具有優異的親水保持性。 The hydrophilic coating of a specific embodiment of the present invention is deposited via hot-wire chemical vapor deposition. The organosilicon monomer, under oxygen atmosphere conditions and catalytic reaction of a heated metal hot wire, can form an excellent hydrophilic coating on the substrate surface. Furthermore, the hydrophilic coating exhibits excellent hydrophilic retention in high-humidity environments.

本發明具體實施方式的親水塗層,所述水接觸角是根據GB/T 30447-2013標準進行測試獲得,在一些具體實施方式中,所述親水塗層的水接觸角在5°以下。 The water contact angle of the hydrophilic coating of a specific embodiment of the present invention is obtained by testing according to the GB/T 30447-2013 standard. In some specific embodiments, the water contact angle of the hydrophilic coating is less than 5°.

本發明具體實施方式的親水塗層,所述親水塗層在高濕環境下具有優異的親水保持性,在一些具體實施方式中,所述親水塗層在常溫下於水中浸泡120分鐘後的水接觸角在10°以下,在一些具體實施方式中,所述 親水塗層在常溫下於水中浸泡120分鐘後的水接觸角在5°以下。 The hydrophilic coating of specific embodiments of the present invention has excellent hydrophilic retention in high-humidity environments. In some specific embodiments, the hydrophilic coating has a water contact angle of less than 10° after immersion in water at room temperature for 120 minutes. In some specific embodiments, the hydrophilic coating has a water contact angle of less than 5° after immersion in water at room temperature for 120 minutes.

本發明具體實施方式的親水塗層,所述親水塗層在高濕環境下具有優異的親水保持性,在一些具體實施方式中,所述親水塗層在常溫下於水中浸泡10分鐘後的水接觸角大小變化率不大於30%,在一些具體實施方式中,所述親水塗層在常溫下於水中浸泡10分鐘後的水接觸角大小變化率不大於20%,在一些具體實施方式中,所述親水塗層在常溫下於水中浸泡10分鐘後的水接觸角大小變化率不大於10%,在一些具體實施方式中,所述親水塗層在常溫下於水中浸泡10分鐘後的水接觸角大小變化率不大於5%。 The hydrophilic coating of a specific embodiment of the present invention has excellent hydrophilic retention in a high-humidity environment. In some specific embodiments, the water contact angle of the hydrophilic coating after immersion in water at room temperature for 10 minutes changes by no more than 30%. In some specific embodiments, the water contact angle of the hydrophilic coating after immersion in water at room temperature for 10 minutes changes by no more than 20%. In some specific embodiments, the water contact angle of the hydrophilic coating after immersion in water at room temperature for 10 minutes changes by no more than 10%. In some specific embodiments, the water contact angle of the hydrophilic coating after immersion in water at room temperature for 10 minutes changes by no more than 5%.

本發明具體實施方式的親水塗層,在一些具體實施方式中,所述有機矽單體具有下式(1)所示的結構, In some specific embodiments of the hydrophilic coating of the present invention, the organosilicon monomer has a structure shown in the following formula (1):

式(1)中,R1選自於C1-C10的烷基或C1-C10的烷氧基,R2、R3和R4分別獨立的選自於氫原子、C1-C10的烷基或C1-C10的烷氧基,在一些具體實施方式中,R1選自於C1-C4的烷基或C1-C4的烷氧基,R2、R3和R4分別獨立的選自於氫原子、C1-C4的烷基或C1-C4的烷氧基,所述C1-C4的烷基具體例如甲基、乙基、丙基、丁基或異丁基等,或C1-C4的烷氧基,所述C1-C4的烷氧基具體例如甲氧基、乙氧基、丙氧基、丁氧基或異丁氧基等。在一些具體實施方式中,所述R1、R2、R3和R4分別獨立的選自於C1-C4的烷氧基,在一些具體實施方式中,所述有機矽單體為正矽酸乙酯、四甲氧基矽烷、正矽酸丙酯或正矽酸丁酯。 In formula (1), R1 is selected from a C1 - C10 alkyl group or a C1 - C10 alkoxy group, and R2 , R3 , and R4 are independently selected from a hydrogen atom, a C1 - C10 alkyl group, or a C1 - C10 alkoxy group. In some specific embodiments, R1 is selected from a C1 -C4 alkyl group or a C1 - C4 alkoxy group, and R2 , R3 , and R4 are independently selected from a hydrogen atom, a C1 - C4 alkyl group, or a C1- C4 alkoxy group. The C1 - C4 alkyl group is specifically exemplified by a methyl group, an ethyl group, a propyl group, a butyl group, or an isobutyl group, or a C1 - C4 alkoxy group is specifically exemplified by a methoxy group , an ethoxy group, a propoxy group, a butoxy group, or an isobutoxy group. In some embodiments, R 1 , R 2 , R 3 and R 4 are independently selected from C 1 -C 4 alkoxy groups. In some embodiments, the organosilicon monomer is ethyl orthosilicate, tetramethoxysilane, propyl orthosilicate or butyl orthosilicate.

本發明具體實施方式的親水塗層,在一些具體實施方式中,所述有機矽單體具有下式(2)所示的結構, In some specific embodiments of the hydrophilic coating of the present invention, the organosilicon monomer has a structure shown in the following formula (2):

式(2)中,R5選自於C1-C10的烷基或C1-C10的烷氧基,R6選自於氫原子、C1-C10的烷基或C1-C10的烷氧基,R7為氫原子、羥基、C1-C10的烷基或C1-C10的烷氧基,R8為氫原子或C1-C10的烷基,n為1到10的整數,具體的為1、2、3、4、5、6、7、8、9或10。在一些具體實施方式中,所述R5選自於C1-C4的烷基或C1-C4的烷氧基,R6選自於氫原子、C1-C4的烷基或C1-C4的烷氧基,R7為氫原子、羥基、C1-C4的烷基或C1-C4的烷氧基,R8為氫原子或C1-C4的烷基,所述C1-C4的烷基具體例如甲基、乙基、丙基、丁基或異丁基等,或C1-C4的烷氧基,所述C1-C4的烷氧基具體例如甲氧基、乙氧基、丙氧基、丁氧基或異丁氧基等。 In formula (2), R5 is selected from a C1 - C10 alkyl group or a C1 - C10 alkoxy group, R6 is selected from a hydrogen atom, a C1 - C10 alkyl group or a C1 - C10 alkoxy group, R7 is a hydrogen atom, a hydroxyl group, a C1 - C10 alkyl group or a C1 - C10 alkoxy group, R8 is a hydrogen atom or a C1 - C10 alkyl group, and n is an integer from 1 to 10, specifically 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10. In some embodiments, R5 is selected from a C1 - C4 alkyl group or a C1 - C4 alkoxy group, R6 is selected from a hydrogen atom, a C1 - C4 alkyl group or a C1 - C4 alkoxy group, R7 is a hydrogen atom, a hydroxyl group, a C1 - C4 alkyl group or a C1 - C4 alkoxy group, and R8 is a hydrogen atom or a C1- C4 alkyl group, wherein the C1 - C4 alkyl group is exemplified by a methyl group, an ethyl group, a propyl group, a butyl group or an isobutyl group, or a C1 - C4 alkoxy group, wherein the C1 - C4 alkoxy group is exemplified by a methoxy group, an ethoxy group, a propoxy group, a butoxy group or an isobutoxy group.

本發明具體實施方式的親水塗層,在一些具體實施方式中,所述有機矽單體具有下式(3)所示的結構, In some specific embodiments of the hydrophilic coating of the present invention, the organosilicon monomer has a structure shown in the following formula (3):

式(3)中,R9選自於C1-C10的烷基或C1-C10的烷氧基,R10選自於氫原子、C1-C10的烷基或C1-C10的烷氧基,m為1到10的整數,具體的為1、2、3、4、5、6、7、8、9或10。在一些具體實施方式中,所述R9選自於C1-C4的烷基或C1-C4的烷氧基,R10選自於氫原子、C1-C4的烷基或C1-C4的烷氧基,所述C1-C4的烷基具體例如甲基、乙基、丙基、丁基或異丁基等,或C1-C4的烷氧基,所述C1-C4的烷氧基具體例如甲氧基、乙氧基、丙氧基、丁氧基或異丁氧基等。 In formula (3), R9 is selected from C1 - C10 alkyl or C1 - C10 alkoxy, R10 is selected from hydrogen, C1 - C10 alkyl or C1- C10 alkoxy, and m is an integer from 1 to 10 , specifically 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10. In some embodiments, R9 is selected from a C1 - C4 alkyl group or a C1 - C4 alkoxy group, and R10 is selected from a hydrogen atom, a C1 - C4 alkyl group or a C1 - C4 alkoxy group, wherein the C1-C4 alkyl group is exemplified by a methyl group, an ethyl group, a propyl group, a butyl group or an isobutyl group, or a C1 - C4 alkoxy group, wherein the C1 - C4 alkoxy group is exemplified by a methoxy group, an ethoxy group, a propoxy group, a butoxy group or an isobutoxy group.

本發明具體實施方式的親水塗層,考慮到便於有機矽單體蒸發氣化,在一些具體實施方式中,所述有機矽單體的沸點在200℃以下。 In order to facilitate the evaporation and vaporization of the organosilicon monomer, the hydrophilic coating of the specific embodiment of the present invention, in some specific embodiments, the boiling point of the organosilicon monomer is below 200°C.

本發明具體實施方式的親水塗層,所述塗層厚度為納米級,在 一些具體實施方式中,所述塗層的厚度在1~3000nm,在一些具體實施方式中,所述塗層的厚度在5~500nm,在一些具體實施方式中,所述塗層的厚度在5~150nm。 In specific embodiments of the present invention, the hydrophilic coating has a thickness on the nanometer scale. In some specific embodiments, the coating has a thickness of 1 to 3000 nm, in some specific embodiments, the coating has a thickness of 5 to 500 nm, and in some specific embodiments, the coating has a thickness of 5 to 150 nm.

本發明具體實施方式的親水塗層,在一些具體實施方式中,所述基材為金屬、陶瓷、塑膠、玻璃、電子設備或光學儀器等。在一些具體實施方式中,所述基材為透明材料,具體的例如可以是眼鏡的鏡片、護目鏡、鐳射防護鏡、望遠鏡及各種攝像設備的鏡頭、各種機械的觀察窗、運動潛水鏡、浴室玻璃、化學或生物防護面具、車輛擋風玻璃及後視鏡、排爆處理防護設備、頭盔、太陽能電池板、測量儀器的觀察窗、玻璃罩、溫室的玻璃牆等。 In some embodiments of the hydrophilic coating of the present invention, the substrate is metal, ceramic, plastic, glass, electronic equipment, or optical instruments. In some embodiments, the substrate is a transparent material, such as lenses for glasses, goggles, laser protection lenses, telescopes and lenses for various photographic equipment, observation windows for various machines, sports goggles, bathroom glass, chemical or biological protective masks, vehicle windshields and rearview mirrors, explosives disposal equipment, helmets, solar panels, observation windows for measuring instruments, glass covers, and greenhouse glass walls.

本發明的具體實施方式還提供一種如上所述親水塗層的製備方法,包括以下步驟: A specific embodiment of the present invention also provides a method for preparing the hydrophilic coating as described above, comprising the following steps:

將基材放置於真空沉積室的具有冷卻裝置的樣品台上; Place the substrate on a sample stage with a cooling device in a vacuum deposition chamber;

對真空沉積室抽真空,通入氧氣、惰性氣體和有機矽單體氣體,開啟加熱絲加熱以及所述冷卻裝置進行所述熱絲化學氣相沉積。 The vacuum deposition chamber is evacuated, oxygen, inert gas, and organosilicon monomer gas are introduced, the heating wire is heated, and the cooling device is turned on to perform the hot wire chemical vapor deposition.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述加熱絲為含有鎳、鉻或鎢中的至少一種的金屬絲,具體例如,可以是鎳絲、鉻絲、鎢絲、鎳鉻絲或鎳鎢絲等等。 In some embodiments of the present invention, the method for preparing a hydrophilic coating comprises a metal wire containing at least one of nickel, chromium, or tungsten. Specifically, the heating wire may be a nickel wire, a chromium wire, a tungsten wire, a nickel-chromium wire, or a nickel-tungsten wire.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述樣品台的溫度控制在100℃以下,在一些具體實施方式中,所述樣品台的溫度控制在20~50℃,具體的例如可以是20℃、30℃、40℃或50℃等等,在一些具體實施方式中,所述樣品台的冷卻裝置採取水冷卻裝置。 In some embodiments of the method for preparing a hydrophilic coating according to the present invention, the temperature of the sample stage is controlled below 100°C. In some embodiments, the temperature of the sample stage is controlled between 20°C and 50°C, specifically, 20°C, 30°C, 40°C, or 50°C. In some embodiments, the sample stage is cooled by water.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述加熱絲的溫度為200℃~900℃,具體的例如可以是200℃、250℃、300℃、400℃、500℃、600℃、700℃、800℃或900℃等等。 In some embodiments of the present invention, the temperature of the heating wire is between 200°C and 900°C, and specifically, it can be 200°C, 250°C, 300°C, 400°C, 500°C, 600°C, 700°C, 800°C, or 900°C.

本發明具體實施方式的親水塗層的製備方法,所述對真空沉積室抽真空的真空度可以根據實際情況進行設置,在一些具體實施方式中,所述真空度為0.1~1000mTorr,在一些具體實施方式中,所述真空度為1~100mTorr,在一些具體實施方式中,所述真空度為5~50mTorr。 In the method for preparing a hydrophilic coating according to a specific embodiment of the present invention, the vacuum level of the vacuum deposition chamber can be set according to actual conditions. In some specific embodiments, the vacuum level is 0.1 to 1000 mTorr, in some specific embodiments, the vacuum level is 1 to 100 mTorr, and in some specific embodiments, the vacuum level is 5 to 50 mTorr.

本發明具體實施方式的親水塗層的製備方法,所述惰性氣體包括氮氣、氦氣、氖氣或氬氣等,在一些具體實施方式中,所述惰性氣體的流量為0~1000sccm,在一些具體實施方式中,所述惰性氣體的流量為5~500sccm,在一些具體實施方式中,所述惰性氣體的流量為50~200sccm。 In the method for preparing a hydrophilic coating according to a specific embodiment of the present invention, the inert gas includes nitrogen, helium, neon, or argon. In some specific embodiments, the flow rate of the inert gas is 0 to 1000 sccm, in some specific embodiments, the flow rate of the inert gas is 5 to 500 sccm, and in some specific embodiments, the flow rate of the inert gas is 50 to 200 sccm.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述惰性氣體的流量為1~1000sccm,在一些具體實施方式中,所述惰性氣體的流量為5~500sccm,在一些具體實施方式中,所述惰性氣體的流量為50~200sccm。 In the method for preparing a hydrophilic coating according to a specific embodiment of the present invention, in some specific embodiments, the flow rate of the inert gas is 1 to 1000 sccm, in some specific embodiments, the flow rate of the inert gas is 5 to 500 sccm, and in some specific embodiments, the flow rate of the inert gas is 50 to 200 sccm.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,親水塗層的製備方法還包括以下步驟:在所述熱絲化學氣相沉積前,對基材表面進行等離子體前處理,在一些具體實施方式中,所述等離子體為雙電極脈衝等離子體,通過所述等離子體前處理,可進一步有效提高所述親水塗層的親水性及高濕環境下的親水保持性,在一些具體實施方式中,所述脈衝等離子體的放電功率為10~1000W,放電時間10~1000s,脈衝頻率在1到1000HZ,脈衝的占空比在1:1到1:500,在一些具體實施方式中,所述脈衝等離子體的放電功率為100~500W,放電時間100~500s,脈衝頻率在10到500HZ,脈衝的占空比在1:10到1:100。 The preparation method of the hydrophilic coating of the specific embodiment of the present invention, in some specific embodiments, the preparation method of the hydrophilic coating further includes the following steps: before the hot wire chemical vapor deposition, the surface of the substrate is subjected to plasma pre-treatment. In some specific embodiments, the plasma is a bipolar pulsed plasma. Through the plasma pre-treatment, the hydrophilicity of the hydrophilic coating and the hydrophilicity retention in a high humidity environment can be further effectively improved. In some specific embodiments, the hydrophilic coating is subjected to plasma pre-treatment. In an embodiment, the pulsed plasma has a discharge power of 10 to 1000 W, a discharge time of 10 to 1000 s, a pulse frequency of 1 to 1000 Hz, and a pulse duty cycle of 1:1 to 1:500. In some specific embodiments, the pulsed plasma has a discharge power of 100 to 500 W, a discharge time of 100 to 500 s, a pulse frequency of 10 to 500 Hz, and a pulse duty cycle of 1:10 to 1:100.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述等離子體前處理在具有氧氣的氣氛下進行,在一些具體實施方式中,所述等離子體前處理在具有惰性氣體的氣氛下進行,在一些具體實施方式中給,所述所述等離子體前處理在具有氧氣和惰性氣體的氣氛下進行。 In the method for preparing a hydrophilic coating according to a specific embodiment of the present invention, in some specific embodiments, the plasma pre-treatment is performed in an atmosphere containing oxygen, in some specific embodiments, the plasma pre-treatment is performed in an atmosphere containing an inert gas, and in some specific embodiments, the plasma pre-treatment is performed in an atmosphere containing oxygen and an inert gas.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,親水塗層的製備方法還包括以下步驟:在所述熱絲化學氣相沉積後,在氧氣氣氛下,對所述熱絲化學氣相沉積的塗層表面進行等離子體後處理,在一些具體實施方式中,所述等離子體為雙電極脈衝等離子體,通過所述等離子體後處理,可進一步有效提高所述親水塗層的親水性及高濕環境下的親水保持性,在一些具體實施方式中,所述脈衝等離子體的放電功率為10~1000W,放電時間1~1000s,脈衝頻率在1到1000HZ,脈衝的占空比在1: 1到1:500,在一些具體實施方式中,所述脈衝等離子體的放電功率為100~500W,放電時間10~500s,脈衝頻率在10到500HZ,脈衝的占空比在1:10到1:100。 The preparation method of the hydrophilic coating of the specific embodiment of the present invention, in some specific embodiments, the preparation method of the hydrophilic coating further includes the following steps: after the hot wire chemical vapor deposition, in an oxygen atmosphere, the surface of the coating of the hot wire chemical vapor deposition is subjected to plasma post-treatment. In some specific embodiments, the plasma is a bipolar pulsed plasma. Through the plasma post-treatment, the hydrophilicity of the hydrophilic coating and the hydrophilicity in a high humidity environment can be further effectively improved. Water retention. In some specific embodiments, the pulsed plasma has a discharge power of 10-1000 W, a discharge time of 1-1000 s, a pulse frequency of 1 to 1000 Hz, and a pulse duty cycle of 1:1 to 1:500. In some specific embodiments, the pulsed plasma has a discharge power of 100-500 W, a discharge time of 10-500 s, a pulse frequency of 10 to 500 Hz, and a pulse duty cycle of 1:10 to 1:100.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述真空沉積室中設置有一對或以上的銅電極,在所述熱絲化學氣相沉積前後,開啟所述銅電極,直接在所述真空沉積室中進行所述等離子體前處理和等離子體後處理工藝。 In some embodiments of the method for preparing a hydrophilic coating according to the present invention, a pair or more copper electrodes are installed in the vacuum deposition chamber. Before and after the hot-wire chemical vapor deposition, the copper electrodes are turned on, and the plasma pre-treatment and plasma post-treatment processes are performed directly in the vacuum deposition chamber.

本發明具體實施方式的親水塗層的製備方法,在一些具體實施方式中,所述有機矽單體進入氣化室氣化後然後導入所述真空沉積室,在一些具體實施方式中,所述有機矽單體以一定的流速進入氣化室,在一些具體實施方式中,所述有機矽單體分多批次進入氣化室,在一些具體實施方式中,所述有機矽單體進入氣化室的流量為10-2400μL/min,在一些具體實施方式中,所述有機矽單體進入氣化室的流量為100-500μL/min。 In some embodiments of the present invention, the method for preparing a hydrophilic coating comprises: in some embodiments, the organosilicon monomer enters a vaporization chamber for vaporization and is then introduced into the vacuum deposition chamber. In some embodiments, the organosilicon monomer enters the vaporization chamber at a certain flow rate; in some embodiments, the organosilicon monomer enters the vaporization chamber in multiple batches; in some embodiments, the flow rate of the organosilicon monomer entering the vaporization chamber is 10-2400 μL/min; and in some embodiments, the flow rate of the organosilicon monomer entering the vaporization chamber is 100-500 μL/min.

本發明具體實施方式的親水塗層的製備方法,所述親水塗層、有機矽單體以及基材等的說明如前所述。 The method for preparing a hydrophilic coating according to a specific embodiment of the present invention includes the hydrophilic coating, organosilicon monomer, and substrate as described above.

本發明的具體實施方式還提供一種器件,所述器件的至少部分表面具有以上所述親水塗層,在一些具體實施方式中,所述器件的部分表面或全部表面沉積有上述親水塗層。 Specific embodiments of the present invention further provide a device, wherein at least a portion of the surface of the device has the aforementioned hydrophilic coating. In some specific embodiments, the aforementioned hydrophilic coating is deposited on a portion or the entire surface of the device.

以下通過具體實施例對本發明做進一步說明。 The present invention is further described below through specific examples.

實施例 Implementation Examples

測試方法說明 Test method description

塗層厚度測試:使用美國Filmetrics F20-UV-薄膜厚度測量儀進行檢測。 Coating thickness test: Testing was performed using the American Filmetrics F20-UV film thickness meter.

水接觸角測試:根據GB/T 30447-2013標準進行測試。 Water contact angle test: Tested in accordance with GB/T 30447-2013.

防霧測試:將玻璃板樣品置於95℃恆溫水浴鍋上面,塗層面朝向水蒸氣,其中水面和塗層面距離為5cm,觀察10min後是否起霧。 Anti-fogging test: Place the glass plate sample in a 95°C constant temperature water bath with the coated surface facing the water vapor. The distance between the water surface and the coated surface is 5 cm. Observe for fogging after 10 minutes.

實施例1 Example 1

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm),以及矽片放 置於設置有一對銅棒電極的真空沉積室的樣品台上,對真空沉積室抽真空至真空度8mTorr,通過水冷將樣品台溫度控制為30℃左右;同時通入氦氣和氧氣,流量均為90sccm,腔體壓力為100mTorr; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed on the sample stage of a vacuum deposition chamber equipped with a pair of copper rod electrodes. The chamber was evacuated to a vacuum of 8 mTorr, and the sample stage temperature was controlled at approximately 30°C using water cooling. Helium and oxygen were introduced simultaneously at a flow rate of 90 sccm each, and the chamber pressure was maintained at 100 mTorr.

開啟銅棒電極脈衝等離子體放電,對透明玻璃板表面進行預處理,放電時間為240s,放電功率400W; Turn on the copper rod electrode pulsed plasma discharge to pre-treat the transparent glass surface. The discharge time is 240 seconds and the discharge power is 400W.

關閉銅棒電極等離子體放電,將鎳鉻熱絲電源打開,控制熱絲溫度為300℃;將正矽酸乙酯(TEOS)在溫度為110℃下汽化後以300μl/min的流量通入真空沉積室;與此同時,保持水冷樣品台溫度、腔體壓力及氦氣和氧氣流量不變。 The copper rod electrode plasma discharge was turned off, and the nickel-chromium hot filament power supply was turned on, with the hot filament temperature controlled at 300°C. Tetraethyl orthosilicate (TEOS) was vaporized at 110°C and introduced into the vacuum deposition chamber at a flow rate of 300 μl/min. Meanwhile, the water-cooled sample stage temperature, chamber pressure, and helium and oxygen flow rates were maintained constant.

塗層結束後,維持溫度及真空度不變,30min後破真空取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中,對塗層後(鍍膜)的玻璃板樣品和未鍍膜的空白玻璃板樣品進行防霧測試結果如圖1所示。 After coating, the temperature and vacuum were maintained constant. After 30 minutes, the vacuum was broken and the silicon wafer and glass plate samples were removed. The coating thickness of the silicon wafer was tested, and the water contact angle test results of the glass plate samples were listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below. The anti-fog test results of the coated (coated) glass plate samples and the uncoated blank glass plate samples are shown in Figure 1.

實施例2 Example 2

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm),以及矽片放置於設置有一對銅棒電極的真空沉積室的樣品台上,對真空沉積室抽真空至真空度8mTorr,通過水冷將樣品台溫度控制為30℃左右;同時通入氦氣和氧氣,流量均為90sccm,腔體壓力為100mTorr; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed on the sample stage of a vacuum deposition chamber equipped with a pair of copper rod electrodes. The chamber was evacuated to a vacuum of 8 mTorr, and the sample stage temperature was controlled at approximately 30°C using water cooling. Helium and oxygen were introduced simultaneously at a flow rate of 90 sccm each, and the chamber pressure was maintained at 100 mTorr.

將鎳鉻熱絲電源打開,控制熱絲溫度為300℃;將正矽酸乙酯(TEOS)在溫度為110℃下汽化後以300μl/min的流量通入真空沉積室;與此同時,保持水冷樣品台溫度、腔體壓力及氦氣和氧氣流量不變; Turn on the nickel-chromium hot wire power supply and control the hot wire temperature to 300°C. After vaporizing tetraethyl orthosilicate (TEOS) at 110°C, introduce it into the vacuum deposition chamber at a flow rate of 300 μl/min. Simultaneously, maintain the water-cooled sample stage temperature, chamber pressure, and helium and oxygen flow rates constant.

塗層結束後,維持溫度及真空度不變,30min後破真空取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中,對塗層後(鍍膜)的玻璃板樣品和未鍍膜的空白玻璃板樣品進行防霧測試結果如圖2所示。 After coating, the temperature and vacuum were maintained constant. After 30 minutes, the vacuum was broken and the silicon wafer and glass plate samples were removed. The coating thickness of the silicon wafer was tested, and the water contact angle test results of the glass plate samples were listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below. The anti-fog test results of the coated (coated) glass plate samples and the uncoated blank glass plate samples are shown in Figure 2.

實施例3 Example 3

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm),以及矽片放置於設置有一對銅棒電極的真空沉積室的樣品台上,對真空沉積室抽真空至真空度8mTorr,通過水冷將樣品台溫度控制為30℃左右;同時通入氦氣和氧氣,流量均為90sccm,腔體壓力為100mTorr; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed on the sample stage of a vacuum deposition chamber equipped with a pair of copper rod electrodes. The chamber was evacuated to a vacuum of 8 mTorr, and the sample stage temperature was controlled at approximately 30°C using water cooling. Helium and oxygen were introduced simultaneously at a flow rate of 90 sccm each, and the chamber pressure was maintained at 100 mTorr.

開啟銅棒電極脈衝等離子體放電,對透明玻璃板表面進行預處理,放電時間為240s,放電功率400W; Turn on the copper rod electrode pulsed plasma discharge to pre-treat the transparent glass surface. The discharge time is 240 seconds and the discharge power is 400W.

關閉銅棒電極等離子體放電,將鎳鉻熱絲電源打開,控制熱絲溫度為300℃;將正矽酸乙酯(TEOS)在溫度為110℃下汽化後以300μl/min的流量通入真空沉積室;與此同時,保持水冷樣品台溫度、腔體壓力及氦氣和氧氣流量不變; Turn off the copper rod electrode plasma discharge, turn on the nickel-chromium hot wire power supply, and control the hot wire temperature to 300°C. After vaporizing tetraethyl orthosilicate (TEOS) at 110°C, introduce it into the vacuum deposition chamber at a flow rate of 300μl/min. At the same time, maintain the water-cooled sample stage temperature, chamber pressure, and helium and oxygen flow rates constant.

關閉鎳鉻熱絲加熱電源,關閉氦氣流量,維持氧氣流量90sccm不變,維持腔體壓力100mTorr不變;再次開啟銅棒電極脈衝等離子體放電,放電時間為30s,放電功率300W; Turn off the power to the nickel-chromium heating wire, shut off the helium flow, maintain the oxygen flow at 90 sccm, and maintain the chamber pressure at 100 mTorr. Restart the copper rod electrode pulsed plasma discharge, with a discharge time of 30 seconds and a discharge power of 300 W.

塗層結束後,維持溫度及真空度不變,30min後破真空取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中,對塗層後(鍍膜)玻璃板樣品和未鍍膜的空白玻璃板樣品進行防霧測試結果如圖3所示。 After coating, the temperature and vacuum were maintained constant. After 30 minutes, the vacuum was broken and the silicon wafer and glass plate samples were removed. The coating thickness of the silicon wafer was tested, and the water contact angle test results of the glass plate samples were listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below. The anti-fog test results of the coated (coated) glass plate samples and the uncoated blank glass plate samples are shown in Figure 3.

對比例1 Comparative Example 1

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm)以及矽片放置於等離子體增強化學氣相沉積(Plasma Enhanced Chemical Vapor Deposition,PECVD)真空反應腔體內,對反應腔體連續抽真空使真空度達到80毫托,腔體內部溫度為45℃,通入氦氣,流量為40sccm; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed in a plasma enhanced chemical vapor deposition (PECVD) vacuum reaction chamber. The chamber was continuously evacuated to a vacuum level of 80 mTorr. The chamber temperature was maintained at 45°C, and helium was introduced at a flow rate of 40 sccm.

保持腔體氣壓為80毫托,保持氦氣流量為40sccm,開啟射頻等離子體放電對透明玻璃板表面進行預處理,射頻的能量輸出方式為連續放電,放電時間300s,放電功率300w; Maintain the chamber pressure at 80 mTorr and the helium flow rate at 40 sccm. Start RF plasma discharge to pre-treat the surface of the transparent glass plate. The RF energy output mode is continuous discharge, with a discharge time of 300 seconds and a discharge power of 300W.

然後,通入1,4-丁烯二醇,單體流量為120μL/min,單體氣化溫度為110℃,保持腔體氣壓為80毫托,保持氦氣流量為40sccm,開啟射頻 等離子體放電,射頻的能量輸出方式為脈衝,放電時間5400s,放電功率80w,脈衝頻率50Hz,脈衝占空比45%; Then, 1,4-butenediol was introduced at a monomer flow rate of 120 μL/min and a monomer vaporization temperature of 110°C. The chamber pressure was maintained at 80 mTorr, the helium flow rate was maintained at 40 sccm, and RF plasma discharge was initiated. The RF energy output mode was pulsed, with a discharge time of 5400 s, a discharge power of 80 W, a pulse frequency of 50 Hz, and a pulse duty cycle of 45%.

塗層製備結束後,使反應腔體恢復至常壓,打開腔體取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中。 After the coating preparation was completed, the reaction chamber was returned to normal pressure. The chamber was opened to remove the silicon wafer and glass plate samples. The coating thickness of the silicon wafer was tested, and the water contact angle of the glass plate samples was tested. The results are listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below.

對比例2 Comparative Example 2

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm)以及矽片放置於PECVD真空反應腔體內,對反應腔體連續抽真空使真空度達到80毫托,腔體內部溫度為45℃,通入氦氣,流量為40sccm; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed in a PECVD vacuum reaction chamber. The chamber was continuously evacuated to a vacuum level of 80 mTorr. The chamber temperature was maintained at 45°C, and helium was introduced at a flow rate of 40 sccm.

保持腔體氣壓為80毫托,保持氦氣流量為40sccm,開啟射頻等離子體放電對透明玻璃板表面進行預處理,射頻的能量輸出方式為連續放電,放電時間300s,放電功率300w; Maintain the chamber pressure at 80 mTorr and the helium flow rate at 40 sccm. Start RF plasma discharge to pre-treat the surface of the transparent glass plate. The RF energy output mode is continuous discharge, with a discharge time of 300 seconds and a discharge power of 300W.

然後,將1,4-丁烯二醇:甲基丙烯醯胺按照質量比例5:1進行混合,室溫下攪拌10分鐘混合後均勻,然後通入氣化室氣化後導入PECVD真空反應腔體內,通入氣化室的單體流量為120μL/min,單體氣化溫度為110℃,保持腔體氣壓為80毫托,保持氦氣流量為40sccm,開啟射頻等離子體放電,射頻的能量輸出方式為脈衝,放電時間1800s,放電功率80w,脈衝頻率50Hz,脈衝占空比45%; Next, 1,4-butenediol and methacrylamide were mixed in a mass ratio of 5:1 and stirred at room temperature for 10 minutes until uniformly mixed. The mixture was then passed through a vaporization chamber for vaporization and then introduced into the PECVD vacuum reaction chamber. The monomer flow rate into the vaporization chamber was 120 μL/min, the monomer vaporization temperature was 110°C, the chamber pressure was maintained at 80 mTorr, the helium flow rate was maintained at 40 sccm, and the RF plasma discharge was started. The RF energy output mode was pulsed, with a discharge time of 1800 s, a discharge power of 80 W, a pulse frequency of 50 Hz, and a pulse duty cycle of 45%.

塗層製備結束後,使反應腔體恢復至常壓,打開腔體取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中。 After the coating preparation was completed, the reaction chamber was returned to normal pressure. The chamber was opened to remove the silicon wafer and glass plate samples. The coating thickness of the silicon wafer was tested, and the water contact angle of the glass plate samples was tested. The results are listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below.

對比例3 Comparative Example 3

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm)以及矽片放置於PECVD真空反應腔體內,對反應腔體連續抽真空使真空度達到80毫托,腔體內部溫度為45℃,通入氦氣,流量為40sccm; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed in a PECVD vacuum reaction chamber. The chamber was continuously evacuated to a vacuum level of 80 mTorr. The chamber temperature was maintained at 45°C, and helium was introduced at a flow rate of 40 sccm.

然後,通入正矽酸乙酯(TEOS),單體流量為45μL/min,單體 氣化溫度為110℃,保持腔體氣壓為80毫托,保持氦氣流量為40sccm,開啟射頻等離子體放電,射頻的能量輸出方式為脈衝,放電時間3600s,放電功率80w,脈衝頻率50Hz,脈衝占空比45%; Then, tetraethyl orthosilicate (TEOS) was introduced at a monomer flow rate of 45 μL/min and a monomer vaporization temperature of 110°C. The chamber pressure was maintained at 80 mTorr, the helium flow rate was maintained at 40 sccm, and the RF plasma discharge was started. The RF energy output mode was pulsed, with a discharge time of 3600 s, a discharge power of 80 W, a pulse frequency of 50 Hz, and a pulse duty cycle of 45%.

塗層製備結束後,使反應腔體恢復至常壓,打開腔體取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中。 After the coating preparation was completed, the reaction chamber was returned to normal pressure. The chamber was opened to remove the silicon wafer and glass plate samples. The coating thickness of the silicon wafer was tested, and the water contact angle of the glass plate samples was tested. The results are listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below.

對比例4 Comparative Example 4

將透明玻璃板(長:13cm,寬:6.5cm,厚1mm)以及矽片放置於設置有一對銅棒電極的真空沉積室的樣品台上,對真空沉積室抽真空至真空度8mTorr,通過水冷將樣品台溫度控制為30℃左右;通入氦氣,流量為90sccm,腔體壓力為100mTorr; A transparent glass plate (length: 13 cm, width: 6.5 cm, thickness: 1 mm) and a silicon wafer were placed on the sample stage of a vacuum deposition chamber equipped with a pair of copper rod electrodes. The chamber was evacuated to a vacuum of 8 mTorr, and the sample stage temperature was controlled at approximately 30°C using water cooling. Helium was introduced at a flow rate of 90 sccm, and the chamber pressure was maintained at 100 mTorr.

將鎳鉻熱絲電源打開,控制熱絲溫度為300℃;將正矽酸乙酯(TEOS)在溫度為110℃下汽化後以300μl/min的流量通入真空沉積室;與此同時,保持水冷樣品台溫度、腔體壓力及氦氣和氧氣流量不變; Turn on the nickel-chromium hot wire power supply and control the hot wire temperature to 300°C. After vaporizing tetraethyl orthosilicate (TEOS) at 110°C, introduce it into the vacuum deposition chamber at a flow rate of 300 μl/min. Simultaneously, maintain the water-cooled sample stage temperature, chamber pressure, and helium and oxygen flow rates constant.

塗層結束後,維持溫度及真空度不變,30min後破真空取出矽片和玻璃板樣品,對矽片進行塗層厚度測試,對玻璃板樣品進行塗層的水接觸角測試結果列入下表1中,常溫下,將玻璃板樣品浸沒於水中不同時間,然後自然晾乾後進行水接觸角測試結果列入下表2中。 After coating, the temperature and vacuum were maintained constant. After 30 minutes, the vacuum was broken and the silicon wafer and glass plate samples were removed. The coating thickness of the silicon wafer was tested, and the water contact angle of the glass plate samples was tested. The results are listed in Table 1 below. At room temperature, the glass plate samples were immersed in water for different times and then naturally dried. The water contact angle test results are listed in Table 2 below.

根據上表1和2中結果,實施例1-3中,由有機矽單體正矽酸乙酯在具有氧氣的氣氛條件下通過熱絲化學氣相沉積於基材表面所形成,所述親水塗層具有優異的親水性能,其水接觸角在5°以下,並且,所述塗層浸沒在水中180分鐘後的水接觸角依然能保持在10°以下,表明其在高濕環境下具有優異的親水保持性,對比例1-2中,採用親水單體通過等離子聚合塗層雖然可以獲得優異親水性能的塗層,但是其浸沒在水中10min,其親水性 便發生明顯的大幅度衰減,表明其在高濕環境下的親水保持性比較差,對比例3中,對正矽酸乙酯採用等離子體聚合塗層或的塗層,其水接觸角為95°,表明其不具有親水性,對比例4中,正矽酸乙酯未在氧氣氣氛下進行熱絲化學氣相沉積,其水接觸角為20°,表明其塗層的親水性比較差。由實施例1-3的結果對比,實施例3中,具有等離子體前處理步驟和氧氣氣氛下等離子體後處理步驟的玻璃板在高濕環境下的親水保持性優於實施例1中僅具有等離子體前處理步驟的玻璃板,僅具有等離子體前處理步驟的玻璃板樣品的親水性和在高濕環境下的親水保持性都優於實施例2中不具有等離子體前處理步驟和後處理步驟的玻璃板樣品,表明等離子體前處理步驟有利於提高塗層的親水性和在高濕環境下的親水保持性,氧氣氣氛下等離子體後處理步驟可進一步提高塗層在高濕環境下的親水保持性。由圖1-圖3的結果表明,實施例1-3中的塗層具有優異的防霧性能。 According to the results in Tables 1 and 2 above, in Examples 1-3, the hydrophilic coating formed by hot-wire chemical vapor deposition of the organosilicon monomer ethyl orthosilicate on the substrate surface in an oxygen atmosphere has excellent hydrophilic properties, with a water contact angle of less than 5°. Moreover, the water contact angle of the coating can still be maintained below 10° after being immersed in water for 180 minutes, indicating that it has excellent hydrophilic retention in a high humidity environment. In Comparative Examples 1-2, the hydrophilic monomer is used to form the coating by plasma polymerization. Although a coating with excellent hydrophilic properties can be obtained, its hydrophilicity significantly decreases after immersion in water for 10 minutes, indicating poor hydrophilicity retention in high-humidity environments. In Comparative Example 3, the plasma-polymerized coating or coating of ethyl orthosilicate exhibited a water contact angle of 95°, indicating a lack of hydrophilicity. In Comparative Example 4, the hot-wire chemical vapor deposition of ethyl orthosilicate without oxygen resulted in a water contact angle of 20°, indicating poor hydrophilicity. Comparing the results of Examples 1-3, in Example 3, the glass plate with a plasma pre-treatment step and a plasma post-treatment step in an oxygen atmosphere has a better hydrophilicity retention in a high humidity environment than the glass plate with only a plasma pre-treatment step in Example 1. The hydrophilicity and hydrophilicity of the glass plate sample with only a plasma pre-treatment step in a high humidity environment are better than those of the glass plate sample with only a plasma pre-treatment step in a high humidity environment. The hydrophilicity retention of the glass plate samples in Example 2, which did not undergo the plasma pre-treatment and post-treatment steps, is superior to that of the glass plate samples in Example 2. This indicates that the plasma pre-treatment step is beneficial for improving the hydrophilicity of the coating and its hydrophilicity retention in a high-humidity environment. The plasma post-treatment step in an oxygen atmosphere further improves the hydrophilicity retention of the coating in a high-humidity environment. The results in Figures 1-3 demonstrate that the coatings in Examples 1-3 have excellent anti-fogging properties.

雖然本發明披露如上,但本發明並非限定於此。任何本領域技術人員,在不脫離本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以請求項所限定的範圍為準。 Although the present invention is disclosed above, it is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope defined by the claims.

Claims (15)

一種親水塗層,其特徵在於,所述親水塗層的水接觸角在10°以下,所述親水塗層是由有機矽單體在具有氧氣的氣氛條件下通過熱絲化學氣相沉積於基材表面所形成。A hydrophilic coating is characterized in that the water contact angle of the hydrophilic coating is less than 10 degrees. The hydrophilic coating is formed by hot-wire chemical vapor deposition of organosilicon monomers on the surface of a substrate in an oxygen atmosphere. 如請求項1所述的親水塗層,其中,所述親水塗層的水接觸角在5°以下。The hydrophilic coating according to claim 1, wherein the water contact angle of the hydrophilic coating is less than 5°. 如請求項1所述的親水塗層,其中,所述親水塗層在常溫下於水中浸泡120分鐘後的水接觸角在10°以下。The hydrophilic coating according to claim 1, wherein the water contact angle of the hydrophilic coating after being immersed in water at room temperature for 120 minutes is less than 10°. 如請求項1所述的親水塗層,其中,所述有機矽單體選自於下式(1)~(3)中結構的至少一種, (1)               (2)                 (3) 上式(1)~(3)中,R 1、R 5和R 9分別獨立的選自於C 1-C 10的烷基或C 1-C 10的烷氧基,R 2、R 3、R 4、R 6和R 10分別獨立的選自於氫原子、C 1-C 10的烷基或C 1-C 10的烷氧基,R 7為氫原子、羥基、C 1-C 10的烷基或C 1-C 10的烷氧基,R 8為氫原子或C 1-C 10的烷基,n為1到10的整數,m為1到10的整數。 The hydrophilic coating according to claim 1, wherein the organosilicon monomer is selected from at least one of the structures of the following formulae (1) to (3): (1) (2) (3) In the above formulas (1) to (3), R1 , R5 and R9 are independently selected from C1 - C10 alkyl groups or C1 - C10 alkoxy groups, R2 , R3 , R4 , R6 and R10 are independently selected from hydrogen atom, C1 - C10 alkyl groups or C1- C10 alkoxy groups, R7 is a hydrogen atom, a hydroxyl group, C1 - C10 alkyl groups or C1 - C10 alkoxy groups, R8 is a hydrogen atom or C1 - C10 alkyl groups, n is an integer from 1 to 10 , and m is an integer from 1 to 10. 如請求項1所述的親水塗層,其中,所述有機矽單體為式(1)所示結構,R 1、R 2、R 3和R 4分別獨立的選自於C 1-C 4的烷氧基。 The hydrophilic coating according to claim 1, wherein the organosilicon monomer has a structure represented by formula (1), and R 1 , R 2 , R 3 and R 4 are independently selected from C 1 -C 4 alkoxy groups. 如請求項5所述的親水塗層,其中,所述有機矽單體為正矽酸乙酯、四甲氧基矽烷、正矽酸丙酯或正矽酸丁酯。The hydrophilic coating according to claim 5, wherein the organosilicon monomer is ethyl orthosilicate, tetramethoxysilane, propyl orthosilicate, or butyl orthosilicate. 如請求項1所述的親水塗層,其中,所述有機矽單體的沸點在200℃以下。The hydrophilic coating according to claim 1, wherein the boiling point of the organosilicon monomer is below 200°C. 如請求項1所述的親水塗層,其中,所述親水塗層的厚度為5nm~3000nm。The hydrophilic coating according to claim 1, wherein the thickness of the hydrophilic coating is 5 nm to 3000 nm. 一種如請求項1至8中任意一項所述親水塗層的製備方法,其特徵在於,包括以下步驟: 將基材放置於真空沉積室的具有冷卻裝置的樣品台上; 對真空沉積室抽真空,通入氧氣、惰性氣體和有機矽單體氣體,開啟加熱絲加熱以及所述冷卻裝置進行所述熱絲化學氣相沉積。 A method for preparing a hydrophilic coating as described in any one of claims 1 to 8, comprising the following steps: Placing a substrate on a sample stage equipped with a cooling device in a vacuum deposition chamber; Evacuating the vacuum deposition chamber, introducing oxygen, an inert gas, and an organosilicon monomer gas, and performing the hot-wire chemical vapor deposition by activating the heating wire and the cooling device. 如請求項9所述親水塗層的製備方法,其中,所述加熱絲為含有鎳、鉻或鎢中的至少一種的金屬絲。The method for preparing a hydrophilic coating as described in claim 9, wherein the heating wire is a metal wire containing at least one of nickel, chromium or tungsten. 如請求項9所述親水塗層的製備方法,其中,所述樣品台的溫度控制在100℃以下,加熱絲的溫度為200~900℃。The method for preparing a hydrophilic coating as described in claim 9, wherein the temperature of the sample stage is controlled below 100°C and the temperature of the heating wire is 200-900°C. 如請求項9所述親水塗層的製備方法,其中,還包括以下步驟:在所述熱絲化學氣相沉積前,對基材表面進行等離子體前處理。The method for preparing a hydrophilic coating as described in claim 9 further includes the following step: performing plasma pre-treatment on the surface of the substrate before the hot wire chemical vapor deposition. 如請求項9所述親水塗層的製備方法,其中,還包括以下步驟:在所述熱絲化學氣相沉積後,在氧氣氣氛下,對所述熱絲化學氣相沉積的塗層表面進行等離子體後處理。The method for preparing a hydrophilic coating as described in claim 9 further comprises the following step: after the hot wire chemical vapor deposition, the surface of the hot wire chemical vapor deposition coating is subjected to plasma post-treatment in an oxygen atmosphere. 如請求項12或13所述親水塗層的製備方法,其中,所述等離子體為雙電極脈衝等離子體。The method for preparing a hydrophilic coating as described in claim 12 or 13, wherein the plasma is a bipolar pulsed plasma. 一種器件,其特徵在於,所述器件的至少部分表面具有請求項1至8中任一項所述的親水塗層。A device, characterized in that at least a portion of its surface has the hydrophilic coating according to any one of claims 1 to 8.
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