TWI896981B - Light-emitting device array and optical transceiver system having the same - Google Patents
Light-emitting device array and optical transceiver system having the sameInfo
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- TWI896981B TWI896981B TW112121695A TW112121695A TWI896981B TW I896981 B TWI896981 B TW I896981B TW 112121695 A TW112121695 A TW 112121695A TW 112121695 A TW112121695 A TW 112121695A TW I896981 B TWI896981 B TW I896981B
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- G—PHYSICS
- G02—OPTICS
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
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Abstract
Description
本揭露是有關一種發光元件陣列及一種具有發光元件陣列的光收發系統。The present disclosure relates to a light emitting device array and an optical transceiver system having the light emitting device array.
隨著現今科技的進步,在半導體產業中名為超穎介面(metasurface)的結構被應用於雷射光學系統中以取代傳統的繞射光學元件(diffractive optical element,DOE),進而使具有超穎介面的雷射光學元件尺寸可微縮。除此之外,由於超穎介面的幾何結構小於可見光波長,因此比起傳統的繞射光學元件,可具有更多元的光波相位調控能力。With advancements in current technology, structures known in the semiconductor industry as metasurfaces are being applied to laser optical systems to replace traditional diffractive optical elements (DOEs). This allows for the miniaturization of laser optical components with metasurfaces. Furthermore, because the geometry of metasurfaces is smaller than the wavelength of visible light, they offer a wider range of optical phase control capabilities than traditional diffractive optical elements.
儘管具有超穎介面的雷射光學元件帶來了裝置尺寸微縮的可能性與雷射光束整形之功能,超穎介面的光波調控能力通常於製程結束後就已固定,使具有超穎介面的雷射光學元件的雷射光學特性過於單一化,限制了其應用於現實場域中的操作彈性。While laser optical devices with meta-smooth interfaces offer the potential for device miniaturization and the ability to shape laser beams, the lightwave control capabilities of the meta-smooth interface are typically fixed after the manufacturing process. This results in overly uniform laser optical properties and limits their operational flexibility in real-world applications.
本揭露之一技術態樣為一種發光元件陣列。One technical aspect of the present disclosure is a light-emitting element array.
根據本揭露之一些實施方式,一種發光元件陣列包括第一發光元件、第二發光元件與第三發光元件。第一發光元件包括第一發光結構與位於第一發光結構上的第一光束整形層。第一光束整形層配置以將第一發光結構發出的光線轉換成第一結構光。第二發光元件包括第二發光結構與位於第二發光結構上的第二光束整形層。第二光束整形層配置以將第二發光結構發出的光線轉換成第二結構光。第一結構光與第二結構光在投影面上的光斑圖形與空間分布相同。第三發光元件包括第三發光結構與位於第三發光結構上的第三光束整形層。第三光束整形層配置以將第三發光結構發出的光線轉換成第三結構光。第三結構光與第一結構光在投影面上的光斑圖形與空間分布不同。According to some embodiments of the present disclosure, a light-emitting element array includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. The first light-emitting element includes a first light-emitting structure and a first beam shaping layer located on the first light-emitting structure. The first beam shaping layer is configured to convert light emitted by the first light-emitting structure into a first structured light. The second light-emitting element includes a second light-emitting structure and a second beam shaping layer located on the second light-emitting structure. The second beam shaping layer is configured to convert light emitted by the second light-emitting structure into a second structured light. The first structured light and the second structured light have the same spot pattern and spatial distribution on a projection surface. The third light-emitting element includes a third light-emitting structure and a third beam shaping layer located on the third light-emitting structure. The third beam shaping layer is configured to convert light emitted by the third light-emitting structure into a third structured light. The third structured light and the first structured light have different spot patterns and spatial distributions on a projection surface.
在一些實施方式中,上述第一光束整形層轉換的第一結構光、第二光束整形層轉換的第二結構光與第三光束整形層轉換的第三結構光的每一者具有參考光,且參考光彼此相同。In some embodiments, each of the first structured light converted by the first beam shaping layer, the second structured light converted by the second beam shaping layer, and the third structured light converted by the third beam shaping layer has a reference light, and the reference lights are identical to each other.
在一些實施方式中,上述第一光束整形層具有第一超穎介面,第二光束整形層具有第二超穎介面,且第三光束整形層具有第三超穎介面。In some embodiments, the first beam shaping layer has a first metasurface, the second beam shaping layer has a second metasurface, and the third beam shaping layer has a third metasurface.
在一些實施方式中,上述第一超穎介面的幾何圖形與第二超穎介面的幾何圖形相同,且第一超穎介面的幾何圖形與第三超穎介面的幾何圖形不同。In some embodiments, the geometric shape of the first hyperbolic interface is the same as the geometric shape of the second hyperbolic interface, and the geometric shape of the first hyperbolic interface is different from the geometric shape of the third hyperbolic interface.
在一些實施方式中,上述第一超穎介面、第二超穎介面與第三超穎介面的每一者具有複數個超穎原子,超穎原子為圓柱形、正方柱形、長方柱形或其組合,且具有正方晶格或六角晶格。In some embodiments, each of the first, second, and third superfluid interfaces has a plurality of superfluid atoms, and the superfluid atoms are cylindrical, square, rectangular, or a combination thereof, and have a square lattice or a hexagonal lattice.
在一些實施方式中,上述第一發光結構、第二發光結構與第三發光結構的每一者具有雷射二極體與基板。基板位於雷射二極體與第一光束整形層之間、雷射二極體與第二光束整形層之間或雷射二極體與第三光束整形層之間。In some embodiments, each of the first, second, and third light-emitting structures includes a laser diode and a substrate. The substrate is located between the laser diode and the first beam shaping layer, between the laser diode and the second beam shaping layer, or between the laser diode and the third beam shaping layer.
在一些實施方式中,上述發光元件陣列更包括載體與電極陣列。載體承載第一發光結構、第二發光結構與第三發光結構。電極陣列位於載體上,且具有複數個N電極與複數個P電極。第一發光結構、第二發光結構與第三發光結構的每一者電性連接N電極的其中一者與P電極的其中一者。In some embodiments, the light-emitting device array further includes a carrier and an electrode array. The carrier supports the first, second, and third light-emitting structures. The electrode array is located on the carrier and includes a plurality of N-electrodes and a plurality of P-electrodes. Each of the first, second, and third light-emitting structures is electrically connected to one of the N-electrodes and one of the P-electrodes.
本揭露之另一技術態樣為一種光收發系統。Another technical aspect of the present disclosure is an optical transceiver system.
根據本揭露之一些實施方式,一種光收發系統包括發光元件陣列與接收器陣列。發光元件陣列包括第一發光元件、第二發光元件與第三發光元件。第一發光元件包括第一發光結構與位於第一發光結構上的第一光束整形層。第一光束整形層配置以將第一發光結構發出的光線轉換成第一結構光。第二發光元件包括第二發光結構與位於第二發光結構上的第二光束整形層。第二光束整形層配置以將第二發光結構發出的光線轉換成第二結構光。第一結構光與第二結構光在投影面上的光斑圖形與空間分布相同。第三發光元件包括第三發光結構與位於第三發光結構上的第三光束整形層。第三光束整形層配置以將第三發光結構發出的光線轉換成第三結構光。第三結構光與第一結構光在投影面上的光斑圖形與空間分布不同。接收器陣列配置以接收第一結構光、第二結構光與第三結構光。According to some embodiments of the present disclosure, an optical transceiver system includes a light-emitting element array and a receiver array. The light-emitting element array includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. The first light-emitting element includes a first light-emitting structure and a first beam shaping layer located on the first light-emitting structure. The first beam shaping layer is configured to convert light emitted by the first light-emitting structure into a first structured light. The second light-emitting element includes a second light-emitting structure and a second beam shaping layer located on the second light-emitting structure. The second beam shaping layer is configured to convert light emitted by the second light-emitting structure into a second structured light. The first structured light and the second structured light have the same spot pattern and spatial distribution on a projection surface. The third light-emitting element includes a third light-emitting structure and a third beam shaping layer located on the third light-emitting structure. The third beam shaping layer is configured to convert light emitted by the third light-emitting structure into a third structured light. The third structured light has a different spot pattern and spatial distribution from the first structured light on the projection surface. The receiver array is configured to receive the first structured light, the second structured light, and the third structured light.
在一些實施方式中,上述第一光束整形層具有第一超穎介面,第二光束整形層具有第二超穎介面,且第三光束整形層具有第三超穎介面。In some embodiments, the first beam shaping layer has a first metasurface, the second beam shaping layer has a second metasurface, and the third beam shaping layer has a third metasurface.
在一些實施方式中,上述第一超穎介面的幾何圖形與第二超穎介面的幾何圖形相同,且第一超穎介面的幾何圖形與第三超穎介面的幾何圖形不同。In some embodiments, the geometric shape of the first hyperbolic interface is the same as the geometric shape of the second hyperbolic interface, and the geometric shape of the first hyperbolic interface is different from the geometric shape of the third hyperbolic interface.
在一些實施方式中,上述光收發系統更包括調制器、聚焦透鏡與成像辨識系統。調制器電性連接發光元件陣列。聚焦透鏡設置於接收器陣列的一側。成像辨識系統電性連接接收器陣列。In some embodiments, the optical transceiver system further includes a modulator, a focusing lens, and an imaging recognition system. The modulator is electrically connected to the light-emitting element array. The focusing lens is disposed on one side of the receiver array. The imaging recognition system is electrically connected to the receiver array.
在一些實施方式中,上述第一光束整形層轉換的第一結構光、第二光束整形層轉換的第二結構光與第三光束整形層轉換的第三結構光的每一者具有一參考光,且參考光彼此相同。In some embodiments, each of the first structured light converted by the first beam shaping layer, the second structured light converted by the second beam shaping layer, and the third structured light converted by the third beam shaping layer has a reference light, and the reference lights are identical to each other.
在一些實施方式中,上述光收發系統的發光元件陣列更包括載體與電極陣列。載體承載第一發光結構、第二發光結構與第三發光結構。電極陣列位於載體上,且具有複數個N電極與複數個P電極。第一發光結構、第二發光結構與第三發光結構的每一者電性連接N電極的其中一者與P電極的其中一者。In some embodiments, the light-emitting device array of the optical transceiver system further includes a carrier and an electrode array. The carrier supports the first, second, and third light-emitting structures. The electrode array is located on the carrier and includes a plurality of N-electrodes and a plurality of P-electrodes. Each of the first, second, and third light-emitting structures is electrically connected to one of the N-electrodes and one of the P-electrodes.
在本揭露上述實施方式中,由於發光元件陣列包括第一發光元件、第二發光元件與第三發光元件,第一結構光與第二結構光在投影面上的光斑圖形與空間分布相同,且第三結構光與第一結構光在投影面上的光斑圖形與空間分布不同,因此第一結構光、第二結構光與第三結構光在投影面上可實現多種不同的光斑圖形與空間分布,並使發光元件陣列可發出具有高度自由性的結構光。除此之外,由於發光元件陣列具有複數個發光元件,因此藉由發光元件陣列投影的影像可具有較佳的影像解析度,且發光元件陣列可實現二維雷射光束陣列掃描之功能。In the above-described embodiment of the present disclosure, because the light-emitting element array includes a first light-emitting element, a second light-emitting element, and a third light-emitting element, the first and second structured lights have the same spot pattern and spatial distribution on the projection surface, while the third structured light has a different spot pattern and spatial distribution from the first structured light. Therefore, the first, second, and third structured lights can achieve a variety of different spot patterns and spatial distributions on the projection surface, allowing the light-emitting element array to emit structured light with a high degree of freedom. Furthermore, because the light-emitting element array includes a plurality of light-emitting elements, the image projected by the light-emitting element array can have a higher image resolution, and the light-emitting element array can implement the function of two-dimensional laser beam array scanning.
以下揭示之實施方式內容提供了用於實施所提供的標的之不同特徵的許多不同實施方式,或實例。下文描述了元件和佈置之特定實例以簡化本案。當然,該等實例僅為實例且並不意欲作為限制。此外,本案可在各個實例中重複元件符號及/或字母。此重複係用於簡便和清晰的目的,且其本身不指定所論述的各個實施方式及/或配置之間的關係。The following disclosed embodiments provide numerous different embodiments, or examples, for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. However, these examples are merely examples and are not intended to be limiting. Furthermore, the present disclosure may repeat component symbols and/or letters throughout the various examples. This repetition is for simplicity and clarity and does not, in itself, dictate a relationship between the various embodiments and/or configurations discussed.
諸如「在……下方」、「在……之下」、「下部」、「在……之上」、「上部」等等空間相對術語可在本文中為了便於描述之目的而使用,以描述如附圖中所示之一個元件或特徵與另一元件或特徵之關係。空間相對術語意欲涵蓋除了附圖中所示的定向之外的在使用或操作中的裝置的不同定向。裝置可經其他方式定向(旋轉90度或以其他定向)並且本文所使用的空間相對描述詞可同樣相應地解釋。Spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein for descriptive purposes to describe the relationship of one element or feature to another element or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
第1圖繪示根據本揭露一實施方式之發光元件陣列100運作時的示意圖。第2圖繪示第1圖之第一結構光SL1、第二結構光SL2與第三結構光SL3於投影面PP的光斑圖形S1至S3。同時參閱第1圖與第2圖,發光元件陣列100包括第一發光元件110、第二發光元件120與第三發光元件130。第一發光元件110包括第一發光結構111與位於第一發光結構111上的第一光束整形層112。第一光束整形層112配置以將第一發光結構111發出的光線轉換成第一結構光SL1。第二發光元件120包括第二發光結構121與位於第二發光結構121上的第二光束整形層122。第二光束整形層122配置以將第二發光結構121發出的光線轉換成第二結構光SL2。在投影面PP上,第一結構光SL1與第二結構光SL2的空間分布相同,且第一結構光SL1的光斑圖形S1與第二結構光SL2的光斑圖形S2相同。第三發光元件130包括第三發光結構131與位於第三發光結構131上的第三光束整形層132。第三光束整形層132配置以將第三發光結構131發出的光線轉換成第三結構光SL3。在投影面PP上,第一結構光SL1與第三結構光SL3的空間分布不相同,且第一結構光SL1的光斑圖形S1與第三結構光SL3的光斑圖形S3也不相同。FIG1 is a schematic diagram illustrating the operation of a light-emitting element array 100 according to an embodiment of the present disclosure. FIG2 illustrates the spot patterns S1 to S3 of the first structured light SL1, the second structured light SL2, and the third structured light SL3 of FIG1 on a projection plane PP. Referring to both FIG1 and FIG2, the light-emitting element array 100 includes a first light-emitting element 110, a second light-emitting element 120, and a third light-emitting element 130. The first light-emitting element 110 includes a first light-emitting structure 111 and a first beam shaping layer 112 positioned above the first light-emitting structure 111. The first beam shaping layer 112 is configured to convert light emitted by the first light-emitting structure 111 into the first structured light SL1. The second light-emitting element 120 includes a second light-emitting structure 121 and a second beam shaping layer 122 positioned above the second light-emitting structure 121. The second beam shaping layer 122 is configured to convert the light emitted by the second light-emitting structure 121 into second structured light SL2. On the projection plane PP, the first structured light SL1 and the second structured light SL2 have the same spatial distribution, and the spot pattern S1 of the first structured light SL1 and the spot pattern S2 of the second structured light SL2 are the same. The third light-emitting element 130 includes a third light-emitting structure 131 and a third beam shaping layer 132 positioned above the third light-emitting structure 131. The third beam shaping layer 132 is configured to convert the light emitted by the third light-emitting structure 131 into third structured light SL3. On the projection plane PP, the first structured light SL1 and the third structured light SL3 have different spatial distributions, and the spot pattern S1 of the first structured light SL1 and the spot pattern S3 of the third structured light SL3 are also different.
在一些實施方式中,投影面PP可為人的臉部或手部。舉例來說,發光元件陣列100可應用於手機中的臉部辨識系統、表情辨識、擴增實境(augmented reality,AR)眼鏡之3D感測、體感遊戲的行人與手部辨識。在其他實施方式中,投影面PP也可為其他表面,並不用以限制本揭露。In some embodiments, the projection surface PP can be a person's face or hand. For example, the light-emitting device array 100 can be used in facial recognition systems in mobile phones, expression recognition, 3D sensing in augmented reality (AR) glasses, and pedestrian and hand recognition in motion-sensing games. In other embodiments, the projection surface PP can also be other surfaces, and this is not intended to limit the present disclosure.
具體而言,由於發光元件陣列100包括第一發光元件110、第二發光元件120與第三發光元件130,且於投影面PP上第一結構光SL1的光斑圖形S1與第二結構光SL2的光斑圖形S2相同,並與第三結構光SL3的光斑圖形S3不相同,因此第一結構光SL1、第二結構光SL2與第三結構光SL3在投影面PP上可實現多種不同的光斑圖形與空間分布,並使發光元件陣列100可發出具有高度自由性的結構光。除此之外,由於發光元件陣列100具有複數個發光元件(如第一發光元件110、第二發光元件120與第三發光元件130),因此藉由發光元件陣列100投影的影像可具有較佳的影像解析度,且發光元件陣列100可應用於二維雷射光束陣列掃描之功能中。Specifically, because the light-emitting element array 100 includes a first light-emitting element 110, a second light-emitting element 120, and a third light-emitting element 130, and the spot pattern S1 of the first structured light SL1 and the spot pattern S2 of the second structured light SL2 on the projection plane PP are the same, and different from the spot pattern S3 of the third structured light SL3, the first structured light SL1, the second structured light SL2, and the third structured light SL3 can achieve a variety of different spot patterns and spatial distributions on the projection plane PP, allowing the light-emitting element array 100 to emit structured light with a high degree of freedom. In addition, because the light emitting element array 100 includes a plurality of light emitting elements (e.g., the first light emitting element 110, the second light emitting element 120, and the third light emitting element 130), the image projected by the light emitting element array 100 can have better image resolution, and the light emitting element array 100 can be applied to the function of two-dimensional laser beam array scanning.
除此之外,第一光束整形層112轉換的第一結構光SL1、第二光束整形層122轉換的第二結構光SL2與第三光束整形層132轉換的第三結構光SL3的每一者具有參考光RL,且參考光RL彼此相同。這樣的配置,使發光元件陣列100可具有3D感測(3D sensing)校正與定位之功能。Furthermore, the first structured light SL1 generated by the first beam shaping layer 112, the second structured light SL2 generated by the second beam shaping layer 122, and the third structured light SL3 generated by the third beam shaping layer 132 each have a reference light RL, and the reference light RL is identical. This configuration enables the light-emitting device array 100 to perform 3D sensing, calibration, and positioning functions.
在一些實施方式中,第一光束整形層112具有第一超穎介面113,第二光束整形層122具有第二超穎介面123,且第三光束整形層132具有第三超穎介面133。由於第一發光結構111、第二發光結構121與第三發光結構131可為半導體雷射元件,且超穎介面的製程與半導體雷射元件的製程可進行整合,因此發光元件陣列100的製程可略過用以配置繞射光學元件(diffractive optical element,DOE)的光學元件製造廠以及半導體封裝廠,並實現單片集成(monolithic integration) ,進而使發光元件陣列100的尺寸可進一步縮減。In some embodiments, the first beam shaping layer 112 has a first meta-interface 113, the second beam shaping layer 122 has a second meta-interface 123, and the third beam shaping layer 132 has a third meta-interface 133. Because the first light-emitting structure 111, the second light-emitting structure 121, and the third light-emitting structure 131 can be semiconductor laser devices, and the manufacturing processes of the meta-interface and the semiconductor laser devices can be integrated, the manufacturing process of the light-emitting device array 100 can bypass the optical device manufacturing plant and semiconductor packaging plant used to configure the diffractive optical element (DOE), achieving monolithic integration, thereby further reducing the size of the light-emitting device array 100.
除此之外,第一超穎介面113的幾何圖形G1與第二超穎介面123的幾何圖形G2相同(如第4圖與第5圖所示),且第一超穎介面113的幾何圖形G1與第三超穎介面133的幾何圖形G3不同(如第4圖與第6圖所示)。這樣的配置,使第一結構光SL1的光斑圖形S1與第二結構光SL2的光斑圖形S2相同,並與第三結構光SL3的光斑圖形S3不相同,進而使發光元件陣列100可應用於具有高解析度與高精度的時序編碼技術中。在一些實施方式中,光斑圖形S1、光斑圖形S2與光斑圖形S3可包括點狀陣列、隨機斑紋排列或網狀圖形分布。在本實施方式中,光斑圖形S1與光斑圖形S2為點狀陣列,且光斑圖形S3為隨機斑紋排列。In addition, the geometric pattern G1 of the first super-smooth interface 113 is identical to the geometric pattern G2 of the second super-smooth interface 123 (as shown in Figures 4 and 5 ), and the geometric pattern G1 of the first super-smooth interface 113 is different from the geometric pattern G3 of the third super-smooth interface 133 (as shown in Figures 4 and 6 ). This configuration enables the spot pattern S1 of the first structured light SL1 to be identical to the spot pattern S2 of the second structured light SL2, and different from the spot pattern S3 of the third structured light SL3. This enables the light-emitting element array 100 to be applied to high-resolution and high-precision timing coding technology. In some embodiments, the spot pattern S1, the spot pattern S2, and the spot pattern S3 may include a dot array, a random pattern arrangement, or a mesh pattern distribution. In this embodiment, the spot pattern S1 and the spot pattern S2 are dot arrays, and the spot pattern S3 is a random speckle arrangement.
除此之外,發光元件陣列100可更包括載體140(submount)與電極陣列150。載體140承載第一發光結構111、第二發光結構121與第三發光結構131。電極陣列150位於載體140上。電極陣列150具有複數個N電極152與複數個P電極154。第一發光元件110的第一發光結構111、第二發光元件120的第二發光結構121與第三發光元件130的第三發光結構131的每一者電性連接N電極152的其中一者與P電極154的其中一者。這樣的配置,使發光元件陣列100的第一發光元件110、第二發光元件120與第三發光元件130的每一者可獨立運作(例如獨立控制各個發光元件的亮滅),使發光元件陣列100可發出具有高度自由性的結構光。In addition, the light-emitting device array 100 may further include a carrier 140 (submount) and an electrode array 150. The carrier 140 supports the first light-emitting structure 111, the second light-emitting structure 121, and the third light-emitting structure 131. The electrode array 150 is located on the carrier 140. The electrode array 150 has a plurality of N electrodes 152 and a plurality of P electrodes 154. Each of the first light-emitting structure 111 of the first light-emitting device 110, the second light-emitting structure 121 of the second light-emitting device 120, and the third light-emitting structure 131 of the third light-emitting device 130 is electrically connected to one of the N electrodes 152 and one of the P electrodes 154. This configuration allows the first light emitting element 110, the second light emitting element 120 and the third light emitting element 130 of the light emitting element array 100 to operate independently (eg, independently control the brightness of each light emitting element), so that the light emitting element array 100 can emit structured light with a high degree of freedom.
第3A圖繪示第1圖之第一發光元件110於電極陣列150上的側視圖。第3B圖繪示第1圖之第一發光元件110電極陣列150上的俯視圖。同時參閱第3A圖與第3B圖,第一發光元件110包括第一發光結構111與位於第一發光結構111上的第一光束整形層112。第一光束整形層112具有第一超穎介面113。第一超穎介面113具有複數個超穎原子114。在一些實施方式中,超穎原子114可為圓柱形、正方柱形、長方柱形或其組合,且可具有正方晶格或六角晶格。除此之外,這些超穎原子114的頂面面積可不相同,使第一光束整形層112可決定第一結構光SL1的空間分布與光學特性。在一些實施方式中,可使用電腦生成全像術(computer generated holography,CGH)設計一種第一結構光SL1的空間分布,並根據其理想遠場圖形建構第一超穎介面113的幾何圖形G1與超穎原子114的排列方式。第二發光元件120與第三發光元件130的配置與第3A圖相似,不重覆贅述。FIG3A shows a side view of the first light-emitting element 110 in FIG1 on the electrode array 150. FIG3B shows a top view of the first light-emitting element 110 in FIG1 on the electrode array 150. Referring to both FIG3A and FIG3B, the first light-emitting element 110 includes a first light-emitting structure 111 and a first beam-shaping layer 112 disposed on the first light-emitting structure 111. The first beam-shaping layer 112 has a first superfluid interface 113. The first superfluid interface 113 has a plurality of superfluid atoms 114. In some embodiments, the superfluid atoms 114 may be cylindrical, square, rectangular, or a combination thereof, and may have a square or hexagonal lattice. Furthermore, the top surface areas of these super-slim atoms 114 can vary, allowing the first beam shaping layer 112 to determine the spatial distribution and optical properties of the first structured light SL1. In some embodiments, computer-generated holography (CGH) can be used to design the spatial distribution of the first structured light SL1. The geometric pattern G1 of the first super-slim interface 113 and the arrangement of the super-slim atoms 114 are then constructed based on the ideal far-field pattern. The configuration of the second and third light-emitting elements 120 and 130 is similar to that in FIG3A and will not be repeated here.
第4圖繪示第1圖之第一發光元件110運作時於載體140與電極陣列150上的剖面圖。同時參閱第4圖與第1圖,第一發光元件110包括第一發光結構111與位於第一發光結構111上的第一光束整形層112。載體140承載第一發光結構111。電極陣列150位於載體140上。在本實施方式中,第一發光結構111可具有基板115與雷射二極體116,且基板115位於雷射二極體116與第一光束整形層112之間。這樣的配置為覆晶(flip chip)結構,與使用打線技術(wire bonding)的結構相比,可佔據更小的體積,有利於發光元件陣列100的微縮。除此之外,雷射二極體116的N極117與P極118可分別電性連接電極陣列150的N電極152與P電極154。如此一來,可藉由電極陣列150驅動雷射二極體116,以向第一光束整形層112發出雷射光束,並通過第一光束整形層112使該雷射光束轉換成具有參考光RL的第一結構光SL1。在一些實施方式中,雷射二極體116可包括垂直共振腔面射型雷射(vertical cavity surface emitting laser,VCSEL)與光子晶體面射型雷射(photonic crystal surface emitting laser,PCSEL),但並不用以限制此揭露。Figure 4 illustrates a cross-sectional view of the first light-emitting element 110 of Figure 1 during operation, mounted on a carrier 140 and an electrode array 150. Referring to Figure 4 and Figure 1 together, the first light-emitting element 110 includes a first light-emitting structure 111 and a first beam-shaping layer 112 disposed on the first light-emitting structure 111. The carrier 140 supports the first light-emitting structure 111. The electrode array 150 is disposed on the carrier 140. In this embodiment, the first light-emitting structure 111 may include a substrate 115 and a laser diode 116, with the substrate 115 disposed between the laser diode 116 and the first beam-shaping layer 112. This configuration is a flip chip structure, which occupies a smaller volume than structures using wire bonding technology, facilitating the miniaturization of the light-emitting device array 100. Furthermore, the N-pole 117 and P-pole 118 of the laser diode 116 can be electrically connected to the N-pole 152 and P-pole 154 of the electrode array 150, respectively. In this way, the electrode array 150 can drive the laser diode 116 to emit a laser beam toward the first beam shaping layer 112. The laser beam is then converted by the first beam shaping layer 112 into the first structured light SL1 having the reference light RL. In some embodiments, the laser diode 116 may include a vertical cavity surface emitting laser (VCSEL) or a photonic crystal surface emitting laser (PCSEL), but this is not intended to limit the present disclosure.
第5圖繪示第1圖之第二發光元件120運作時於載體140與電極陣列150上的剖面圖。同時參閱第5圖與第1圖,第二發光元件120包括第二發光結構121與位於第二發光結構121上的第二光束整形層122。在本實施方式中,第二光束整形層122與第4圖的第一光束整形層112相同。載體140承載第二發光結構121。電極陣列150位於載體140上。在本實施方式中,第二發光結構121可具有基板125與雷射二極體126,且基板125位於雷射二極體126與第二光束整形層122之間。這樣的配置為覆晶結構,與使用打線技術的結構相比,可佔據更小的體積,有利於發光元件陣列100的微縮。除此之外,雷射二極體126的N極127與P極128可分別電性連接電極陣列150的N電極152與P電極154。在一些實施方式中,雷射二極體126可包括垂直共振腔面射型雷射與光子晶體面射型雷射,但並不用以限制此揭露。FIG5 illustrates a cross-sectional view of the second light-emitting element 120 of FIG1 during operation on a carrier 140 and an electrode array 150. Referring to FIG5 and FIG1 together, the second light-emitting element 120 includes a second light-emitting structure 121 and a second beam-shaping layer 122 located on the second light-emitting structure 121. In this embodiment, the second beam-shaping layer 122 is identical to the first beam-shaping layer 112 of FIG4. The carrier 140 supports the second light-emitting structure 121. The electrode array 150 is located on the carrier 140. In this embodiment, the second light-emitting structure 121 may include a substrate 125 and a laser diode 126, with the substrate 125 located between the laser diode 126 and the second beam-shaping layer 122. This configuration is a flip-chip structure, which occupies a smaller volume than structures using wire bonding technology, facilitating the miniaturization of the light-emitting device array 100. Furthermore, the N-pole 127 and P-pole 128 of the laser diode 126 can be electrically connected to the N-electrode 152 and P-electrode 154 of the electrode array 150, respectively. In some embodiments, the laser diode 126 can include a vertical cavity surface-emitting laser or a photonic crystal surface-emitting laser, but this is not intended to limit the present disclosure.
除此之外,第二光束整形層122具有第二超穎介面123,且第二超穎介面123可具有複數個超穎原子124。在一些實施方式中,超穎原子124可為圓柱形、正方柱形、長方柱形或其組合,且可具有正方晶格或六角晶格。這些超穎原子124的頂面面積可不相同,使第二光束整形層122可決定第二結構光SL2的空間分布與光學特性。在一些實施方式中,可使用電腦生成全像術設計一種第二結構光SL2的空間分布,並根據其理想遠場圖形建構第二超穎介面123的幾何圖形G2與超穎原子124的排列方式。如此一來,可藉由電極陣列150驅動雷射二極體126,以向第二光束整形層122發出雷射光束,並通過第二光束整形層122使該雷射光束轉換成具有參考光RL的第二結構光SL2。在本實施方式中,超穎原子124的排列方式可與第4圖的超穎原子114的排列方式相同,且第二超穎介面123的幾何圖形G2與第一超穎介面113的幾何圖形G1相同,使第一結構光SL1與第二結構光SL2的空間分布可相同。In addition, the second beam-shaping layer 122 has a second super-smooth interface 123, which may include a plurality of super-smooth atoms 124. In some embodiments, the super-smooth atoms 124 may be cylindrical, square, rectangular, or a combination thereof, and may have a square or hexagonal lattice. The top surface areas of these super-smooth atoms 124 may vary, allowing the second beam-shaping layer 122 to determine the spatial distribution and optical properties of the second structured light SL2. In some embodiments, computer-generated holography can be used to design the spatial distribution of the second structured light SL2, and the geometric pattern G2 of the second super-smooth interface 123 and the arrangement of the super-smooth atoms 124 are constructed based on its ideal far-field pattern. In this way, the electrode array 150 can drive the laser diode 126 to emit a laser beam toward the second beam shaping layer 122. The laser beam is then converted into the second structured light SL2 having the reference light RL by the second beam shaping layer 122. In this embodiment, the arrangement of the super-slim atoms 124 can be the same as that of the super-slim atoms 114 in FIG. 4 , and the geometric pattern G2 of the second super-slim interface 123 is the same as the geometric pattern G1 of the first super-slim interface 113, so that the spatial distributions of the first structured light SL1 and the second structured light SL2 can be the same.
第6圖繪示第1圖之第三發光元件130運作時於載體140與電極陣列150上的剖面圖。同時參閱第6圖與第1圖,第三發光元件130包括第三發光結構131與位於第三發光結構131上的第三光束整形層132。在本實施方式中,第三光束整形層132與第4圖的第一光束整形層112不同,也與第5圖的第二光束整形層122不同。載體140承載第三發光結構131。電極陣列150位於載體140上。在本實施方式中,第三發光結構131可具有基板135與雷射二極體136,且基板135位於雷射二極體136與第三光束整形層132之間。這樣的配置為覆晶結構,與使用打線技術的結構相比,可佔據更小的體積,有利於發光元件陣列100的微縮。除此之外,雷射二極體136的N極137與P極138可分別電性連接電極陣列150的N電極152的其中一者與P電極154的其中一者。在一些實施方式中,雷射二極體136可包括垂直共振腔面射型雷射與光子晶體面射型雷射,但並不用以限制此揭露。Figure 6 shows a cross-sectional view of the third light-emitting element 130 in Figure 1 during operation, mounted on a carrier 140 and an electrode array 150. Referring to Figure 6 and Figure 1 together, the third light-emitting element 130 includes a third light-emitting structure 131 and a third beam-shaping layer 132 positioned above the third light-emitting structure 131. In this embodiment, the third beam-shaping layer 132 is different from the first beam-shaping layer 112 in Figure 4 and the second beam-shaping layer 122 in Figure 5. The carrier 140 supports the third light-emitting structure 131. The electrode array 150 is positioned above the carrier 140. In this embodiment, the third light-emitting structure 131 may include a substrate 135 and a laser diode 136, with the substrate 135 positioned between the laser diode 136 and the third beam-shaping layer 132. This configuration forms a flip-chip structure, which occupies a smaller volume than structures utilizing wire bonding technology, facilitating the miniaturization of the light-emitting device array 100. Furthermore, the N-pole 137 and P-pole 138 of the laser diode 136 may be electrically connected to one of the N-electrodes 152 and one of the P-electrodes 154 of the electrode array 150, respectively. In some embodiments, the laser diode 136 may include a vertical cavity surface-emitting laser or a photonic crystal surface-emitting laser, but this is not intended to limit the present disclosure.
除此之外,第三光束整形層132具有第三超穎介面133,且第三超穎介面133具有複數個超穎原子134。在一些實施方式中,超穎原子134可為圓柱形、正方柱形、長方柱形或其組合,且可具有正方晶格或六角晶格。這些超穎原子134的頂面面積可不相同,使第三光束整形層132可決定第三結構光SL3的空間分布與光學特性。在一些實施方式中,可使用電腦生成全像術設計一種第三結構光SL3的空間分布,並根據其理想遠場圖形建構第三超穎介面133的幾何圖形G3與超穎原子134的排列方式。如此一來,可藉由電極陣列150驅動雷射二極體136,以向第三光束整形層132發出雷射光束,並通過第三光束整形層132使該雷射光束轉換成具有參考光RL的第三結構光SL3。在本實施方式中,超穎原子134的排列方式與第4圖的超穎原子114的排列方式不相同,且第三超穎介面133的幾何圖形G3與第一超穎介面113的幾何圖形G1不相同,使第三結構光SL3與第一結構光SL1的空間分布可不相同。In addition, the third beam-shaping layer 132 includes a third super-sharp interface 133, which includes a plurality of super-sharp atoms 134. In some embodiments, the super-sharp atoms 134 may be cylindrical, square, rectangular, or a combination thereof, and may have a square or hexagonal lattice. The top surface areas of these super-sharp atoms 134 may vary, allowing the third beam-shaping layer 132 to determine the spatial distribution and optical properties of the third structured light SL3. In some embodiments, computer-generated holography can be used to design the spatial distribution of the third structured light SL3, and the geometric pattern G3 of the third super-sharp interface 133 and the arrangement of the super-sharp atoms 134 are constructed based on its ideal far-field pattern. In this manner, the electrode array 150 drives the laser diode 136 to emit a laser beam toward the third beam shaping layer 132. The laser beam is then converted into third structured light SL3 comprising reference light RL by the third beam shaping layer 132. In this embodiment, the arrangement of the super-atoms 134 differs from that of the super-atoms 114 in FIG. 4 , and the geometric pattern G3 of the third super-interface 133 differs from the geometric pattern G1 of the first super-interface 113. This allows the spatial distribution of the third structured light SL3 to differ from that of the first structured light SL1.
應瞭解到,已敘述過的元件連接關係、材料與功效將不再重複贅述,合先敘明。在以下敘述中,將說明具有發光元件陣列的光收發系統。It should be understood that the component connections, materials, and functions already described will not be repeated and will be explained first. In the following description, an optical transceiver system having an array of light-emitting components will be described.
第7圖繪示根據本揭露一實施方式之光收發系統200運作時的示意圖。第8圖繪示第7圖之第一結構光SL1、第二結構光SL2與第三結構光SL3於投影面PP的光斑圖形S1至S3。光收發系統200包括接收器陣列210與前述的發光元件陣列100。發光元件陣列100包括第一發光元件110、第二發光元件120與第三發光元件130。在投影面PP上,第一結構光SL1與第二結構光SL2的空間分布相同,且第一結構光SL1的光斑圖形S1與第二結構光SL2的光斑圖形S2相同。此外,在投影面PP上,第一結構光SL1與第三結構光SL3的空間分布不相同,且第一結構光SL1的光斑圖形S1與第三結構光SL3的光斑圖形S3也不相同。接收器陣列210具有複數個接收器212,且可接收經投影面PP反射的第一結構光SL1、第二結構光SL2與第三結構光SL3。具體而言,發光元件陣列100可向接收器陣列210發出具有高度自由性的結構光(包括第一結構光SL1、第二結構光SL2與第三結構光SL3),因此接收器陣列210接收的影像可具有較佳的影像解析度,且光收發系統200可實現二維雷射光束陣列掃描之功能(可自由控制發光元件陣列100的各發光元件開關(例如第一發光元件110、第二發光元件120與第三發光元件130))。FIG7 is a schematic diagram illustrating the operation of an optical transceiver system 200 according to an embodiment of the present disclosure. FIG8 illustrates the spot patterns S1 to S3 of the first structured light SL1, the second structured light SL2, and the third structured light SL3 of FIG7 on a projection plane PP. The optical transceiver system 200 includes a receiver array 210 and the aforementioned light-emitting element array 100. The light-emitting element array 100 includes a first light-emitting element 110, a second light-emitting element 120, and a third light-emitting element 130. On the projection plane PP, the spatial distribution of the first structured light SL1 and the second structured light SL2 is the same, and the spot pattern S1 of the first structured light SL1 and the spot pattern S2 of the second structured light SL2 are the same. Furthermore, on projection plane PP, the spatial distributions of the first structured light SL1 and the third structured light SL3 are different, and the spot pattern S1 of the first structured light SL1 and the spot pattern S3 of the third structured light SL3 are also different. The receiver array 210 includes a plurality of receivers 212, and is capable of receiving the first structured light SL1, the second structured light SL2, and the third structured light SL3 reflected by the projection plane PP. Specifically, the light-emitting element array 100 can emit highly flexible structured light (including first structured light SL1, second structured light SL2, and third structured light SL3) to the receiver array 210. Therefore, the image received by the receiver array 210 can have better image resolution, and the optical transceiver system 200 can realize the function of two-dimensional laser beam array scanning (freely controlling the switching of each light-emitting element in the light-emitting element array 100 (for example, the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130)).
在一些實施方式中,光收發系統200還可包括調制器220、聚焦透鏡230與成像辨識系統240。調制器220電性連接發光元件陣列100,使調制器220可透過電極陣列150控制第一發光元件110、第二發光元件120與第三發光元件130。聚焦透鏡230設置於接收器陣列210的一側,例如位於投影面PP與接收器陣列210之間,配置以使第一結構光SL1、第二結構光SL2與第三結構光SL3可聚焦於接收器陣列210上。成像辨識系統240電性連接接收器陣列210,使光收發系統200可具有特徵辨識之功能,並可應用於影像重建之技術中。除此之外,具有發光元件陣列100與接收器陣列210的光收發系統200可應用於手機中的臉部辨識系統、表情辨識、擴增實境眼鏡之3D感測以及體感遊戲的行人與手部辨識。In some embodiments, the optical transceiver system 200 may further include a modulator 220, a focusing lens 230, and an imaging recognition system 240. The modulator 220 is electrically connected to the light-emitting element array 100, enabling the modulator 220 to control the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 via the electrode array 150. The focusing lens 230 is disposed on one side of the receiver array 210, for example, between the projection plane PP and the receiver array 210, and is configured to focus the first structured light SL1, the second structured light SL2, and the third structured light SL3 onto the receiver array 210. The imaging recognition system 240 is electrically connected to the receiver array 210, enabling the optical transceiver system 200 to perform feature recognition and be applied in image reconstruction technology. In addition, the optical transceiver system 200 having the light emitting element array 100 and the receiver array 210 can be applied to facial recognition systems in mobile phones, expression recognition, 3D sensing in augmented reality glasses, and pedestrian and hand recognition in motion-sensing games.
前述概述了幾個實施方式的特徵,使得本領域技術人員可以更好地理解本揭露的態樣。本領域技術人員應當理解,他們可以容易地將本揭露用作設計或修改其他過程和結構的基礎,以實現與本文介紹的實施方式相同的目的和/或實現相同的優點。本領域技術人員還應該認識到,這樣的等效構造不脫離本揭露的精神和範圍,並且在不脫離本揭露的精神和範圍的情況下,它們可以在這裡進行各種改變,替換和變更。The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and/or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope of the present disclosure.
100:發光元件陣列 110:第一發光元件 111:第一發光結構 112:第一光束整形層 113:第一超穎介面 114,124,134:超穎原子 115,125,135:基板 116,126,136:雷射二極體 117,127,137:N極 118,128,138:P極 120:第二發光元件 121:第二發光結構 122:第二光束整形層 123:第二超穎介面 130:第三發光元件 131:第三發光結構 132:第三光束整形層 133:第三超穎介面 140:載體 150:電極陣列 152:N電極 154:P電極 SL1:第一結構光 SL2:第二結構光 SL3:第三結構光 PP:投影面 S1,S2,S3:光斑圖形 G1,G2,G3:幾何圖形 RL:參考光 200:光收發系統 210:接收器陣列 212:接收器 220:調制器 230:聚焦透鏡 240:成像辨識系統 100: Light-emitting element array 110: First light-emitting element 111: First light-emitting structure 112: First beam-shaping layer 113: First super-smooth interface 114, 124, 134: Super-smooth atoms 115, 125, 135: Substrate 116, 126, 136: Laser diode 117, 127, 137: N-pole 118, 128, 138: P-pole 120: Second light-emitting element 121: Second light-emitting structure 122: Second beam-shaping layer 123: Second super-smooth interface 130: Third light-emitting element 131: Third light-emitting structure 132: Third beam-shaping layer 133: Third super-smooth interface 140: Carrier 150: Electrode array 152: N electrode 154: P electrode SL1: First structured light SL2: Second structured light SL3: Third structured light PP: Projection surface S1, S2, S3: Spot pattern G1, G2, G3: Geometric pattern RL: Reference light 200: Optical transceiver system 210: Receiver array 212: Receiver 220: Modulator 230: Focusing lens 240: Image recognition system
當與隨附圖示一起閱讀時,可由後文實施方式最佳地理解本揭露內容的態樣。注意到根據此行業中之標準實務,各種特徵並未按比例繪製。實際上,為論述的清楚性,可任意增加或減少各種特徵的尺寸。 第1圖繪示根據本揭露一實施方式之發光元件陣列運作時的立體圖。 第2圖繪示第1圖之第一結構光、第二結構光與第三結構光於投影面的光斑圖形。 第3A圖繪示第1圖之第一發光元件於電極陣列上的側視圖。 第3B圖繪示第1圖之第一發光元件於電極陣列上的俯視圖。 第4圖繪示第1圖之第一發光元件運作時於載體與電極陣列上的剖面圖。 第5圖繪示第1圖之第二發光元件運作時於載體與電極陣列上的剖面圖。 第6圖繪示第1圖之第三發光元件運作時於載體與電極陣列上的剖面圖。 第7圖繪示根據本揭露一實施方式之光收發系統運作時的示意圖。 第8圖繪示第7圖之第一結構光、第二結構光與第三結構光於投影面的光斑圖形。 The present disclosure is best understood from the following embodiments when read in conjunction with the accompanying drawings. Note that, in accordance with standard industry practice, various features are not drawn to scale. In fact, the dimensions of various features may be arbitrarily increased or decreased for clarity of discussion. Figure 1 illustrates a perspective view of a light-emitting device array in operation according to one embodiment of the present disclosure. Figure 2 illustrates the spot patterns of the first, second, and third structured lights of Figure 1 on a projection surface. Figure 3A illustrates a side view of the first light-emitting device of Figure 1 on an electrode array. Figure 3B illustrates a top view of the first light-emitting device of Figure 1 on an electrode array. Figure 4 illustrates a cross-sectional view of the first light-emitting element in Figure 1 during operation, positioned on the carrier and electrode array. Figure 5 illustrates a cross-sectional view of the second light-emitting element in Figure 1 during operation, positioned on the carrier and electrode array. Figure 6 illustrates a cross-sectional view of the third light-emitting element in Figure 1 during operation, positioned on the carrier and electrode array. Figure 7 illustrates a schematic diagram of an optical transceiver system in operation according to an embodiment of the present disclosure. Figure 8 illustrates the spot patterns of the first, second, and third structured lights in Figure 7 on a projection surface.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic Storage Information (Please enter in order by institution, date, and number) None International Storage Information (Please enter in order by country, institution, date, and number) None
100:發光元件陣列 110:第一發光元件 111:第一發光結構 112:第一光束整形層 113:第一超穎介面 114,124,134:超穎原子 120:第二發光元件 121:第二發光結構 122:第二光束整形層 123:第二超穎介面 130:第三發光元件 131:第三發光結構 132:第三光束整形層 133:第三超穎介面 140:載體 150:電極陣列 152:N電極 154:P電極 SL1:第一結構光 SL2:第二結構光 SL3:第三結構光 PP:投影面 G1,G2,G3:幾何圖形 RL:參考光 100: Light-emitting element array 110: First light-emitting element 111: First light-emitting structure 112: First beam-shaping layer 113: First super-smooth interface 114, 124, 134: Super-smooth atoms 120: Second light-emitting element 121: Second light-emitting structure 122: Second beam-shaping layer 123: Second super-smooth interface 130: Third light-emitting element 131: Third light-emitting structure 132: Third beam-shaping layer 133: Third super-smooth interface 140: Carrier 150: Electrode array 152: N electrode 154: P electrode SL1: First structured light SL2: Second structured light SL3: Third structured light PP: Projection Surface G1, G2, G3: Geometric Figures RL: Reference Light
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