TWI896122B - Electronic package - Google Patents
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- TWI896122B TWI896122B TW113117441A TW113117441A TWI896122B TW I896122 B TWI896122 B TW I896122B TW 113117441 A TW113117441 A TW 113117441A TW 113117441 A TW113117441 A TW 113117441A TW I896122 B TWI896122 B TW I896122B
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Abstract
Description
本發明涉及一種半導體封裝結構,尤指一種具有散熱結構之電子封裝件。 The present invention relates to a semiconductor package structure, in particular to an electronic package with a heat dissipation structure.
隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之電子元件(Electronic Components)及電子電路(Electronic Circuits),故半導體晶片在運作時將隨之產生更大量的熱能。 As the demand for electronic products increases in functionality and processing speed, semiconductor chips, as core components of electronic products, must have higher densities of electronic components and circuits. Consequently, semiconductor chips generate greater amounts of heat during operation.
為迅速將熱能散逸至外部,業界通常在半導體封裝件中配置散熱片(Heat Sink),該散熱片通常藉由例如導熱介面材(Thermal Interface Material,TIM)之散熱體結合至晶片背面,以藉散熱體與散熱片逸散出半導體晶片所產生之熱量。 To quickly dissipate heat, the industry typically incorporates a heat sink into semiconductor packages. This heat sink is typically bonded to the backside of the chip via a heat sink, such as a thermal interface material (TIM). The heat generated by the semiconductor chip is dissipated through the heat sink and the heat sink.
如圖1所示,習知半導體封裝件1之製法先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上,再將一散熱件13以其頂片130藉由散熱體12結合於該半導體晶片11之非作用面11b上,且該散熱件13之支撐腳131透過黏著層14架設於該封裝基板10上。於運作時,該半導體晶片11所產生 之熱能經由該散熱體12而傳導至該散熱件13之頂片130以散熱至該半導體封裝件1之外部。 As shown in Figure 1, the conventional method for manufacturing a semiconductor package 1 begins by flip-chip bonding a semiconductor chip 11 with its active surface 11a on a package substrate 10 (i.e., via conductive bumps 110 and underfill 111). A heat sink 13 is then bonded to the inactive surface 11b of the semiconductor chip 11 via a heat spreader 12, with its top plate 130 attached to the package substrate 10. Support legs 131 of the heat sink 13 are mounted on the package substrate 10 via an adhesive layer 14. During operation, heat generated by the semiconductor chip 11 is transferred via the heat spreader 12 to the top plate 130 of the heat sink 13, dissipating the heat to the exterior of the semiconductor package 1.
然而,由於散熱件13與封裝基板10兩者熱膨脹係數(CTE)差異過大,以致半導體封裝件1經過高低溫循環測試後產生應力上下拉扯,造成封裝基板10裂損,甚而導致後續電性測試異常。 However, due to the significant difference in the coefficient of thermal expansion (CTE) between the heat sink 13 and the package substrate 10, the semiconductor package 1 experienced stress and tension after high and low temperature cycling testing, causing cracks in the package substrate 10 and even leading to abnormalities in subsequent electrical tests.
因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the aforementioned problems of learning technology has become an urgent issue that needs to be solved.
鑑於上述習知技術之種種缺失,本發明提供一種電子封裝件,包括:承載結構,具有核心層及結合該核心層之線路層;電子元件,配置於該承載結構上且電性連接該線路層;以及散熱結構,配置於該電子元件上,其中,該散熱結構具有第一形變趨勢,該承載結構具有第二形變趨勢,且該第一形變趨勢與該第二形變趨勢相同。 In view of the various deficiencies of the aforementioned prior art, the present invention provides an electronic package comprising: a carrier structure having a core layer and a circuit layer bonded to the core layer; an electronic component disposed on the carrier structure and electrically connected to the circuit layer; and a heat dissipation structure disposed on the electronic component, wherein the heat dissipation structure has a first deformation trend, and the carrier structure has a second deformation trend, and the first deformation trend is the same as the second deformation trend.
前述之電子封裝件中,該承載結構具有覆蓋該線路層之絕緣層;該絕緣層為綠漆。 In the aforementioned electronic package, the supporting structure has an insulating layer covering the circuit layer; the insulating layer is green paint.
前述之電子封裝件中,該承載結構為具有該核心層之封裝基板;該線路層為重佈線路層。 In the aforementioned electronic package, the supporting structure is a package substrate having the core layer; the circuit layer is a redistribution circuit layer.
前述之電子封裝件中,該電子元件為半導體晶片,其具有相對之作用面與非作用面,並以覆晶方式令該作用面透過複數導電凸塊電性連接於該承載結構上並電性連接該線路層。 In the aforementioned electronic package, the electronic component is a semiconductor chip having an active surface and an inactive surface opposite to each other. The active surface is electrically connected to the supporting structure and the circuit layer via a plurality of conductive bumps in a flip-chip manner.
前述之電子封裝件中,該散熱結構具有頂片及自該頂片延伸出之支撐部,其中,該頂片藉由導熱體設於該電子元件上。 In the aforementioned electronic package, the heat dissipation structure comprises a top plate and a support portion extending from the top plate, wherein the top plate is disposed on the electronic component via a heat conductor.
前述之電子封裝件中,該散熱結構與該核心層之熱膨脹係數之差異小於7ppm/℃。另外,該第一形變趨勢為散熱結構邊緣高於中心或散熱結構邊緣低於中心,該第二形變趨勢為承載結構邊緣高於中心或承載結構邊緣低於中心。 In the aforementioned electronic package, the difference in thermal expansion coefficient between the heat sink structure and the core layer is less than 7 ppm/°C. Furthermore, the first deformation trend is that the edge of the heat sink structure is higher than the center, or the edge of the heat sink structure is lower than the center, and the second deformation trend is that the edge of the support structure is higher than the center, or the edge of the support structure is lower than the center.
綜上所述,本發明之電子封裝件包含有電子元件、承載結構及散熱結構,其中藉由減小散熱結構與承載結構中核心層的熱膨脹係數差異,使承載結構及散熱結構之形變趨勢相同,以降低電子封裝件的翹曲應力以及避免保護層(綠漆)裂損的問題。 In summary, the electronic package of the present invention includes an electronic component, a supporting structure, and a heat dissipation structure. By minimizing the difference in thermal expansion coefficients between the heat dissipation structure and the core layer of the supporting structure, the deformation trends of the supporting structure and the heat dissipation structure are aligned, thereby reducing the bending stress of the electronic package and avoiding cracking of the protective layer (green paint).
1:半導體封裝件 1: Semiconductor Package
10:封裝基板 10: Package substrate
11:半導體晶片 11: Semiconductor Chip
11a:作用面 11a: Action surface
11b:非作用面 11b: Non-active surface
110:導電凸塊 110: Conductive bumps
111:底膠 111: Primer
12:散熱體 12: Heat sink
13:散熱件 13: Heat sink
130:頂片 130: Top plate
131:支撐腳 131: Support your feet
14:黏著層 14: Adhesive layer
2:電子封裝件 2: Electronic packaging
21:承載結構 21: Load-bearing structure
21a:第一表面 21a: First surface
21b:第二表面 21b: Second surface
210:核心層 210: Core Layer
211:線路層 211: Line layer
212:絕緣層 212: Insulating layer
22:電子元件 22: Electronic components
22a:作用面 22a: Action surface
22b:非作用面 22b: Non-active surface
220:導電凸塊 220: Conductive bumps
221:底膠 221: Primer
23:散熱結構 23: Heat dissipation structure
231:頂片 231: Top Plate
232:支撐部 232: Supporting part
24:導熱體 24: Heat conductor
25:結合層 25: Binding layer
W1:第一形變趨勢 W1: First deformation trend
W2:第二形變趨勢 W2: Second deformation trend
圖1為習知半導體封裝件之剖面示意圖。 Figure 1 is a schematic cross-sectional view of a conventional semiconductor package.
圖2為本發明之電子封裝件之剖面示意圖。 Figure 2 is a schematic cross-sectional view of the electronic package of the present invention.
圖3為本發明之電子封裝件之形變示意圖。 Figure 3 is a schematic diagram showing the deformation of the electronic package of the present invention.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand the other advantages and effects of the present invention from the contents disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並 非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, and sizes depicted in the figures accompanying this specification are intended solely to facilitate understanding and reading by those skilled in the art. They are not intended to limit the implementation of this invention and therefore have no substantive technical significance. Any structural modifications, changes in proportions, or adjustments to sizes, provided they do not affect the effectiveness and objectives of this invention, shall remain within the scope of the technical disclosure of this invention. Furthermore, terms such as "above," "first," "second," and "one" used in this specification are used solely for clarity of description and are not intended to limit the scope of implementation of the present invention. Any changes or adjustments to these terms, without substantially altering the technical content, should be considered within the scope of implementation of the present invention.
圖2為本發明之電子封裝件2之剖面示意圖,其主要於一承載結構21上設置至少一電子元件22,並將一散熱結構23透過導熱體24接置於電子元件22上。 Figure 2 is a schematic cross-sectional view of the electronic package 2 of the present invention. It primarily comprises at least one electronic component 22 mounted on a supporting structure 21, and a heat dissipation structure 23 connected to the electronic component 22 via a heat conductor 24.
該承載結構21定義有相對之第一表面21a及第二表面21b,並包含有一核心層210、結合該核心層210之線路層211以及覆蓋該線路層211之絕緣層212。 The carrier structure 21 defines a first surface 21a and a second surface 21b opposite to each other, and includes a core layer 210, a circuit layer 211 bonded to the core layer 210, and an insulation layer 212 covering the circuit layer 211.
於本實施例中,該承載結構21例如是具有該核心層210之封裝基板,該線路層211例如為重佈線路層(redistribution layer,簡稱RDL),該絕緣層212例如為綠漆(Solder Mask)。 In this embodiment, the carrier structure 21 is, for example, a package substrate having the core layer 210 , the circuit layer 211 is, for example, a redistribution layer (RDL), and the insulating layer 212 is, for example, a green paint (Solder Mask).
該電子元件22例如是主動元件、被動元件、封裝模組或其組合者,主動元件例如是半導體晶片,被動元件例如為電阻、電容及電感等。 The electronic component 22 may be, for example, an active component, a passive component, a package module, or a combination thereof. The active component may be, for example, a semiconductor chip, and the passive component may be, for example, a resistor, a capacitor, or an inductor.
於本實施例中,該電子元件22為半導體晶片,其具有相對之作用面22a與非作用面22b,並以覆晶方式令該作用面22a透過複數導電凸塊220電性連接於該承載結構21上並電性連接該線路層211,且將底膠221形成於該承載結構21之第一表面21a與該作用面22a之間以包覆各該 導電凸塊220。然而,有關該電子元件22電性連接承載結構21之方式諸多,不限於上述。 In this embodiment, the electronic component 22 is a semiconductor chip having an active surface 22a and an inactive surface 22b. The active surface 22a is electrically connected to the carrier structure 21 and the circuit layer 211 via a plurality of conductive bumps 220 in a flip-chip manner. An underfill 221 is formed between the first surface 21a of the carrier structure 21 and the active surface 22a to cover each of the conductive bumps 220. However, there are many ways to electrically connect the electronic component 22 to the carrier structure 21, not limited to the above.
散熱結構23例如為一散熱片、散熱蓋(Lid)或其他具有同等功能之元件或結構。在本實施例中是採用一散熱蓋來作為範例,其中,該散熱結構23具有頂片231及自該頂片231延伸出之支撐部232。該支撐部232透過結合層25結合固定於該電子元件22元件周圍的該承載結構21之第一表面21a上,使該頂片231與電子元件22的非作用面22b相對。 The heat dissipation structure 23 is, for example, a heat sink, a heat dissipation lid, or other components or structures with equivalent functions. In this embodiment, a heat dissipation lid is used as an example. The heat dissipation structure 23 comprises a top sheet 231 and a support portion 232 extending from the top sheet 231. The support portion 232 is bonded to the first surface 21a of the support structure 21 surrounding the electronic component 22 via a bonding layer 25, such that the top sheet 231 faces the inactive surface 22b of the electronic component 22.
導熱體24設於該電子元件22的非作用面22b與散熱結構23之頂片231之間,以將電子元件22所產生的熱更有效率地傳導到散熱結構23後逸散至環境中。於一實施例中,該導熱體24為一導熱介面材(Thermal Interface Material,TIM)層,其主要材質為金屬銦(In)或銦銀(In/Ag)合金。 The heat conductor 24 is disposed between the inactive surface 22b of the electronic component 22 and the top plate 231 of the heat sink 23 to more efficiently transfer heat generated by the electronic component 22 to the heat sink 23 and then dissipate it into the environment. In one embodiment, the heat conductor 24 is a thermal interface material (TIM) layer primarily composed of indium (In) or an indium-silver (In/Ag) alloy.
本發明主要令散熱結構23與承載結構21之核心層210兩者熱膨脹係數(CTE)之差異小於7ppm/℃,藉以在製程中即便該電子封裝件2受到熱應力作用,散熱結構23具有一第一形變趨勢W1(第一形變趨勢可為散熱結構邊緣高於中心或散熱結構邊緣低於中心),承載結構21具有一第二形變趨勢W2(第二形變趨勢可為承載結構邊緣高於中心或承載結構邊緣低於中心),然其第一形變趨勢W1與第二形變趨勢W2相同(如圖3所示),藉此降低電子封裝件2因翹曲所受應力,以避免承載結構21之絕緣層212(即封裝基板綠漆)發生裂損問題,甚而導致後續電性測試異常狀況。 The present invention mainly makes the difference in the coefficient of thermal expansion (CTE) between the heat dissipation structure 23 and the core layer 210 of the supporting structure 21 less than 7ppm/℃, so that even if the electronic package 2 is subjected to thermal stress during the manufacturing process, the heat dissipation structure 23 has a first deformation trend W1 (the first deformation trend can be that the edge of the heat dissipation structure is higher than the center or the edge of the heat dissipation structure is lower than the center), and the supporting structure 21 has a second deformation trend W2. The second deformation trend W2 (the second deformation trend can be when the edge of the supporting structure is higher than the center or lower than the center), while the first deformation trend W1 and the second deformation trend W2 are the same (as shown in Figure 3). This reduces the stress on the electronic package 2 due to warping, thereby preventing cracks in the insulating layer 212 of the supporting structure 21 (i.e., the green paint on the package substrate), which could lead to abnormalities during subsequent electrical testing.
綜上所述,本發明之電子封裝件包含有電子元件、承載結構及散熱結構,其中藉由減小散熱結構與承載結構中核心層的熱膨脹係數差 異,且使承載結構及散熱結構之形變趨勢相同,藉以降低電子封裝件因翹曲所受應力以及避免保護層(綠漆)裂損的問題。 In summary, the electronic package of the present invention includes an electronic component, a supporting structure, and a heat dissipation structure. By minimizing the difference in thermal expansion coefficients between the heat dissipation structure and the core layer of the supporting structure and aligning the deformation trends of the supporting structure and the heat dissipation structure, the stress on the electronic package due to warping is reduced and cracking of the protective layer (green paint) is avoided.
上述實施例用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are provided to illustrate the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection for the present invention shall be as set forth in the patent application described below.
2:電子封裝件 2: Electronic packaging
21:承載結構 21: Load-bearing structure
21a:第一表面 21a: First surface
21b:第二表面 21b: Second surface
210:核心層 210: Core Layer
211:線路層 211: Line layer
212:絕緣層 212: Insulating layer
22:電子元件 22: Electronic components
22a:作用面 22a: Action surface
22b:非作用面 22b: Non-active surface
220:導電凸塊 220: Conductive bumps
221:底膠 221: Primer
23:散熱結構 23: Heat dissipation structure
231:頂片 231: Top Plate
232:支撐部 232: Supporting part
24:導熱體 24: Heat conductor
25:結合層 25: Binding layer
Claims (11)
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| CN202421102629.2U CN222394811U (en) | 2024-05-10 | 2024-05-20 | Electronic packaging |
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| TW202228255A (en) * | 2021-01-13 | 2022-07-16 | 矽品精密工業股份有限公司 | Electronic package and manufacturing method thereof |
| TW202249192A (en) * | 2021-05-31 | 2022-12-16 | 微智冷科技股份有限公司 | Composite structure and package architecture |
| TW202307978A (en) * | 2021-08-12 | 2023-02-16 | 台灣積體電路製造股份有限公司 | Package structure and manufacturing method thereof |
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|---|---|---|---|---|
| TW202228255A (en) * | 2021-01-13 | 2022-07-16 | 矽品精密工業股份有限公司 | Electronic package and manufacturing method thereof |
| TW202249192A (en) * | 2021-05-31 | 2022-12-16 | 微智冷科技股份有限公司 | Composite structure and package architecture |
| TW202307978A (en) * | 2021-08-12 | 2023-02-16 | 台灣積體電路製造股份有限公司 | Package structure and manufacturing method thereof |
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