TWI894487B - Foreign matter inspection device, exposure device, and manufacturing method of article - Google Patents
Foreign matter inspection device, exposure device, and manufacturing method of articleInfo
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- TWI894487B TWI894487B TW111134889A TW111134889A TWI894487B TW I894487 B TWI894487 B TW I894487B TW 111134889 A TW111134889 A TW 111134889A TW 111134889 A TW111134889 A TW 111134889A TW I894487 B TWI894487 B TW I894487B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Atmospheric Sciences (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
一種異物檢查裝置,檢測在被檢查物的檢查區域中的異物的有無,具有:受光部,其接收透過來自光源的光而對異物進行照明因而產生的來自該異物的散射光;以及判定部,其判定表示由前述受光部接收的光量的訊號是否為容許值內,在前述訊號為容許值外的情況下,判定在前述檢查區域中有異物;前述判定部,根據來自前述光源的光對前述檢查區域進行照明的照明條件,變更前述容許值A foreign body inspection device detects the presence of foreign matter in an inspection area of an object to be inspected, comprising: a light receiving unit that receives scattered light from the foreign matter generated by illuminating the foreign matter with light from a light source; and a determination unit that determines whether a signal indicating the amount of light received by the light receiving unit is within an allowable value, and determines that a foreign matter is present in the inspection area if the signal is outside the allowable value; the determination unit changes the allowable value according to the lighting conditions under which the light from the light source illuminates the inspection area.
Description
本發明,有關異物檢查裝置、曝光裝置及物品之製造方法。 This invention relates to a foreign matter detection device, an exposure device, and a method for manufacturing the same.
半導體裝置、液晶顯示裝置,被使用將原版的微細圖案轉印到玻璃基板上的光刻程序而製造。在該光刻程序中使用的曝光裝置中,例如在原版上有灰、塵等異物的情況下,曝光性能降低,恐發生解析度不良。因此,在曝光裝置中搭載異物檢查裝置,使用異物檢查裝置檢查在原版上的異物的有無。 Semiconductor devices and liquid crystal displays are manufactured using a photolithography process that transfers a fine pattern from an original plate onto a glass substrate. If foreign matter, such as dust or dirt, is present on the original plate, the exposure performance of the exposure equipment used in this process can be reduced, potentially resulting in poor resolution. Therefore, foreign matter detection equipment is installed in the exposure equipment to inspect the original plate for foreign matter.
於近年來的曝光裝置,伴隨原版的大型化,原版由於自重而撓曲,由此恐存在像性能降低之虞。因此,已有設法透過使用平面玻璃(在以下,稱為撓曲校正構件)堵塞原版的上側從而構成氣密室,透過調整氣密室的壓力,降低撓曲。在異物附著於該撓曲校正構件的情況下,亦有曝光性能降低之虞。在專利文獻1,已揭露有關進行原版和撓曲校正構件的異物檢查的異物檢查裝置。在專利文獻1,已揭露透過將原版和撓曲校正構件個別地予以驅動,從而可判定異物附著於何者的內容。 In recent years, as the size of original plates increases, exposure equipment has been experiencing warping due to their own weight, potentially reducing imaging performance. Therefore, a method has been proposed to create an airtight chamber by blocking the upper side of the original plate with a flat glass plate (hereinafter referred to as a warp correction member). By adjusting the pressure within the airtight chamber, the warp is reduced. If foreign matter adheres to the warp correction member, exposure performance may also be reduced. Patent Document 1 discloses a foreign matter detection device that inspects both the original plate and the warp correction member for foreign matter. Patent Document 1 discloses that by independently driving the original plate and the warp correction member, it is possible to determine to which side the foreign matter is attached.
[專利文獻1]日本特開2011-258880號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-258880
異物檢查裝置,一般而言,可透過受光部檢測照射於異物的光的散射光,根據檢測到的受光量來判定異物的大小。根據該結果,可判定異物是否為可容許曝光性能的惡化的大小。然而,伴隨與為了檢查異物而照射於異物的光有關的照明條件的變更,異物的大小和從異物產生的散射光的受光量的關係不同。因此,在使照明條件變更的情況下,存在使異物檢查的精度降低之虞。 Foreign object detection devices generally detect scattered light from light irradiating a foreign object using a light-receiving unit and determine the size of the foreign object based on the amount of light received. This result allows the determination of whether the foreign object is large enough to tolerate degradation of exposure performance. However, as the lighting conditions associated with the light irradiating the foreign object for foreign object detection change, the relationship between the size of the foreign object and the amount of scattered light received from the foreign object changes. Therefore, changing the lighting conditions can reduce the accuracy of foreign object detection.
因此,本發明的目的在於,提供一種有利於抑制異物檢查中的精度的降低的異物檢查裝置。 Therefore, an object of the present invention is to provide a foreign matter detection device that is advantageous in suppressing a decrease in accuracy during foreign matter detection.
為了達成前述目的,作為本發明的一方案的異物檢查裝置,為一種異物檢查裝置,檢測在被檢查物的檢查區域中的異物的有無,具有:受光部,其接收透過來自光源的光而對異物進行照明因而產生的來自該異物的散射光;以及判定部,其判定表示由前述受光部接收的光量的訊號是否為容許值內,在前述訊號為容許值外的情況下,判定在前述檢查區域中有異物;前述判定部,根據來自前述光源的光對前述檢查區域進行照明的照明條件,變更前述容許值。 To achieve the aforementioned objectives, a foreign object detection device, as one embodiment of the present invention, is provided for detecting the presence of foreign matter in an inspection area of an object to be inspected. The device comprises: a light receiving unit that receives scattered light from the foreign matter, generated by illuminating the foreign matter with light from a light source; and a determination unit that determines whether a signal indicating the amount of light received by the light receiving unit is within an allowable value. If the signal is outside the allowable value, the device determines that a foreign matter is present in the inspection area. The determination unit changes the allowable value based on the lighting conditions under which the light from the light source illuminates the inspection area.
本發明的進一步的特徵,將由以下之實施方式(在參照圖式之下)而趨於清楚。 Further features of the present invention will become clear from the following embodiments (with reference to the accompanying drawings).
2:受光部 2: Light-receiving part
6:撓曲校正構件(對應於被檢查物) 6: Deflection correction component (corresponding to the object being inspected)
7:原版(對應於被檢查物) 7: Original (corresponding to the inspected object)
20:異物檢查裝置 20: Foreign object detection device
22:判定部 22: Judgment Department
[圖1]為針對搭載於曝光裝置的異物檢查裝置的構成進行繪示的示意圖。 [Figure 1] is a schematic diagram illustrating the structure of the foreign matter detection device mounted on the exposure device.
[圖2]為用於示出異物與照度不均的關係的圖形。 [Figure 2] is a graph showing the relationship between foreign matter and uneven illumination.
[圖3]為針對異物的大小與訊號強度的關係進行繪示的圖形。 [Figure 3] is a graph showing the relationship between foreign body size and signal strength.
於以下,基於圖式而詳細說明本發明的優選實施方式。另外,各圖中,針對相同的構件,標注相同的參考符號,重複的說明省略。 The preferred embodiments of the present invention are described below in detail with reference to the accompanying drawings. In the drawings, identical components are denoted by the same reference symbols, and repeated descriptions are omitted.
首先,針對本實施方式之異物檢查裝置的構成進行說明。圖1,為針對曝光裝置100的構成的一部分進行繪示的圖,為用於說明本實施方式之異物檢查裝置20的圖。異物檢查裝置20,為可檢查形成有圖案的原版7、作為保護原版7的圖案面的膜的護膜(pellicle)、撓曲校正構件上附著的異物(塵、灰、傷痕、缺陷等)的有無的裝置。關於撓曲校正構件的詳細的說明方面,後述之。在以下,雖說明異 物檢查裝置20搭載於曝光裝置而檢查附著於撓曲校正構件(被檢查物)的異物的有無之例,但在未配置撓曲校正構件6的情況下,亦可檢查附著於原版7的異物。即,根據有無配置撓曲校正構件6,檢查附著於原版7及撓曲校正構件6中的至少一方的異物即可。在本實施方式中,使載置有原版7的面為XY平面,使相對於XY平面垂直的方向為Z方向。 First, the structure of the foreign matter inspection device of this embodiment will be described. Figure 1 illustrates a portion of the structure of an exposure device 100 and is used to illustrate the foreign matter inspection device 20 of this embodiment. The foreign matter inspection device 20 can inspect the original plate 7 (on which a pattern is formed), the pellicle (film) protecting the patterned surface of the original plate 7, and the warp correction member for the presence of foreign matter (dust, ash, scratches, defects, etc.). A detailed description of the warp correction member will be provided later. While the following describes an example in which the foreign matter inspection device 20 is mounted on the exposure apparatus and inspects the presence of foreign matter attached to the warp correction member (the object to be inspected), inspection of foreign matter attached to the original plate 7 is also possible even when the warp correction member 6 is not installed. Specifically, inspection of foreign matter attached to at least one of the original plate 7 and the warp correction member 6 can be performed based on the presence or absence of the warp correction member 6. In this embodiment, the surface on which the original plate 7 is mounted is defined as the XY plane, and the direction perpendicular to the XY plane is defined as the Z direction.
如圖1所示,曝光裝置100具有照明光學系統1、撓曲校正構件6、保持描繪有曝光用的圖案的原版7的原版台8、投影光學系統9以及異物檢查裝置20。來自光源的光經由照明光學系統1被照明到原版7,形成於原版7的圖案經由投影光學系統9被轉印到塗佈有感光材的基板。曝光裝置100,可為一邊使原版台8和基板同步地在Y方向上驅動一邊進行上述轉印的所謂的步進掃描式的曝光裝置。曝光裝置100,不限於此,亦可為步進重複式的曝光裝置。 As shown in Figure 1, exposure apparatus 100 includes an illumination optical system 1, a deflection correction member 6, a plate stage 8 that holds a plate 7 bearing an exposure pattern, a projection optical system 9, and a foreign matter detection device 20. Light from a light source is illuminated by the illumination optical system 1 onto the plate 7, and the pattern formed on the plate 7 is transferred to a substrate coated with a photosensitive material via the projection optical system 9. Exposure apparatus 100 can be a so-called step-and-scan exposure apparatus, which performs this transfer while synchronously driving the plate stage 8 and substrate in the Y direction. Exposure apparatus 100 is not limited to this and can also be a step-and-repeat exposure apparatus.
撓曲校正構件6,配置於原版7的上表面側,可調整撓曲校正構件6與原版7之間的氣密室5(密閉空間)內的氣壓。由此,可校正由原版7的自重引起的撓曲(自重撓曲)。 The deflection correction member 6 is located on the upper surface of the master plate 7 and is capable of adjusting the air pressure within the airtight chamber 5 (enclosed space) between the deflection correction member 6 and the master plate 7. This corrects the deflection caused by the weight of the master plate 7 (self-weight deflection).
在異物附著於撓曲校正構件6、原版7的情況下,在曝光裝置100的曝光處理中,存在發生曝光的解析不良之虞。其原因為,從光源照射於原版的圖案面的照明光23的一部分,被異物遮擋,發生照度不均。 If foreign matter adheres to the deflection correction member 6 or the original plate 7, there is a risk of poor exposure analysis during the exposure process in the exposure device 100. This is because a portion of the illumination light 23 irradiated from the light source onto the pattern surface of the original plate is blocked by the foreign matter, resulting in uneven illumination.
圖2為針對異物與照度不均的關係進行繪示的圖。如圖2所示,在曝光中(異物檢查中),在從原版7的圖案面(下表面)起距離H的位置的撓曲校正構件6的檢查面中有直徑的異物21的情況下,從曝光光源照射於圖案面的照明光23的一部分,被異物遮光。根據因異物為原因被遮光而發生的照度不均ΔI和異物的大小的關係,確定予以發生解析度不良的異物的大小。照度不均ΔI和解析度不良的關係,可根據實測、模擬的結果在檢查之前確定。 FIG2 is a diagram showing the relationship between foreign matter and uneven illumination. As shown in FIG2, during exposure (foreign matter inspection), there is a diameter of 0.01 mm on the inspection surface of the deflection correction member 6 at a distance H from the pattern surface (lower surface) of the original plate 7. In the case of a foreign object 21, part of the illumination light 23 irradiated from the exposure light source to the pattern surface is blocked by the foreign object. The relationship between illumination unevenness ΔI and poor resolution can be determined before inspection based on actual measurement and simulation results.
此處,如示於圖2,假設照明系統的數值孔徑14(NA_ill)、投影系統的數值孔徑17(NA_po)、異物的大小、投影系統的倍率β、圖案面至檢查面為止的光學距離H。光學距離H,為根據原版7和撓曲校正構件6的厚度、原版7和撓曲校正構件6之間的氣體的折射率n、原版7和撓曲校正構件6的間隔的關係而算出的值。照度不均ΔI(單位為%),使用上述參數,由下述的式(1)確定。 Here, as shown in FIG2, it is assumed that the numerical aperture of the illumination system is 14 (NA_ill), the numerical aperture of the projection system is 17 (NA_po), and the size of the foreign body is , the projection system magnification β, and the optical distance H from the pattern surface to the inspection surface. Optical distance H is calculated based on the relationship between the thickness of the original plate 7 and the deflection correction member 6, the refractive index n of the gas between the original plate 7 and the deflection correction member 6, and the distance between the original plate 7 and the deflection correction member 6. Illumination unevenness ΔI (unit: %) is determined using the above parameters using the following equation (1).
在式(1)中使用的照明系統的數值孔徑14、投影系統的數值孔徑17、投影系統的倍率β、原版7的圖案面至檢查面為止的光學距離H,在以下稱為照明條件。另外,在下述中說明的曝光條件亦為照明條件之一。 The numerical aperture 14 of the illumination system, the numerical aperture 17 of the projection system, the magnification β of the projection system, and the optical distance H from the pattern surface of the original plate 7 to the inspection surface used in formula (1) are hereinafter referred to as illumination conditions. In addition, the exposure conditions described below are also one of the illumination conditions.
返回圖1的說明。在撓曲校正構件6的附近,配置有用於檢查附著於撓曲校正構件6的上表面的異物的異物檢查裝置20。異物檢查裝置20具有包含受光元件3和透鏡4的受光部2、光電轉換部21以及判定部22。異物檢查 裝置20,雖亦可獨自地具有異物檢查用的光源,惟以下說明有關使用曝光裝置的曝光光源作為進行異物檢查的光源之例。另外,以下,雖說明有關與對基板進行曝光的曝光處理並行地執行異物檢查之例,惟亦可在不同的時序執行曝光處理和異物檢查。 Returning to the description of Figure 1 , a foreign object detection device 20 is positioned near the deflection correction member 6 for detecting foreign objects attached to the upper surface of the deflection correction member 6 . The foreign object detection device 20 includes a light receiving unit 2 comprising a light receiving element 3 and a lens 4 , a photoelectric conversion unit 21 , and a determination unit 22 Foreign Object Detection Although the device 20 may also include a separate light source for foreign object detection, the following description uses the exposure light source of an exposure device as the light source for foreign object detection. Furthermore, while the following description uses an example in which foreign object detection is performed concurrently with the exposure process of exposing the substrate, the exposure process and foreign object detection may also be performed at different times.
說明有關異物檢查裝置20如何進行異物檢查。從光源射出的光,對撓曲校正構件6的檢查區域進行照明,對存在於檢查區域上的異物進行照明。此時,從異物產生的散射光,經由被構成於受光部2中的透鏡4,被受光元件3接收(檢測)。 The following describes how the foreign object detection device 20 performs foreign object detection. Light emitted from the light source illuminates the inspection area of the deflection correction member 6, thereby illuminating any foreign objects within the inspection area. At this time, scattered light from the foreign object passes through the lens 4 included in the light receiving unit 2 and is received (detected) by the light receiving element 3.
光電轉換部21將由受光部2接收的光轉換為電訊號。在光電轉換部21生成的訊號,被輸入給判定部22。電訊號,為是訊號的強度的電壓以及是受光元件3的受光區域的像素。 The photoelectric converter 21 converts the light received by the light receiving unit 2 into an electrical signal. The signal generated by the photoelectric converter 21 is input to the determination unit 22. The electrical signal is a voltage representing the intensity of the signal and a pixel in the light receiving area of the light receiving element 3.
判定部22,判定被輸入的訊號(即,表示由受光部2接收的光量的訊號)是否為容許值內,在為容許值內的情況下判定為在檢查區域上有異物。具體而言,可根據輸入的訊號,判定在檢查區域上的何區域,有何種程度的大小的異物。在此,訊號強度和異物的大小的關係,可在異物檢查前預先根據實測結果或模擬而記錄於判定部22。 The determination unit 22 determines whether the input signal (i.e., the signal indicating the amount of light received by the light receiving unit 2) is within an allowable value. If so, it determines that a foreign object is present in the inspection area. Specifically, the input signal can be used to determine the area within the inspection area and the size of the foreign object. The relationship between signal intensity and foreign object size can be recorded in the determination unit 22 based on actual measurement results or simulations before the foreign object inspection.
在判定部22檢測到異物的情況下,可中斷曝光處理的程序,自動轉移到除去異物的程序。或者,亦可繼續進行執行中的曝光處理的程序,在將曝光後的基板向 下個程序搬送的時序執行除去異物的程序。另外,在判定部22檢測到異物的情況下,亦可對用戶報告異物存在於檢查區域上。 If the determination unit 22 detects a foreign object, the exposure process can be interrupted and the process automatically shifted to the foreign object removal process. Alternatively, the exposure process can be continued, and the foreign object removal process can be executed while the exposed substrate is being transported to the next process. Furthermore, if the determination unit 22 detects a foreign object, it can notify the user that a foreign object is present in the inspection area.
圖2,為示出異物的大小和輸入到判定部22的訊號強度的關係的圖形。如圖2所示,取決於照明條件,異物的大小和訊號強度的關係不同。在照明條件相同的情況下,異物的大小和訊號強度1對1地對應。例如,在照明條件1下實施異物檢查時,透過將與異物的大小相當的訊號強度A設定為容許值的上限(即,將容許值設定為0以上且A以下),使得在異物的大小為以上的情況下,可檢測到異物。 FIG2 is a graph showing the relationship between the size of a foreign object and the signal intensity input to the determination unit 22. As shown in FIG2, the relationship between the size of a foreign object and the signal intensity varies depending on the lighting conditions. Under the same lighting conditions, the size of the foreign object and the signal intensity have a one-to-one correspondence. For example, when performing foreign object inspection under lighting condition 1, by comparing the foreign object size to the signal intensity, the foreign object size is determined to be 1:1. The signal strength A is set as the upper limit of the allowable value (i.e., the allowable value is set to be greater than 0 and less than A), so that when the size of the foreign object is In the above cases, foreign objects can be detected.
然而,在將照明條件從照明條件1變更為照明條件2的情況下,與異物的大小相當的訊號強度成為訊號強度B(B>A)。此時,在訊號強度的容許值的上限仍然為A時,在異物的大小為(-)至的大小的情況下亦會判定為異物。由此,存在降低生產率之虞。 However, when the lighting condition is changed from lighting condition 1 to lighting condition 2, the size of the foreign object The signal strength becomes signal strength B (B>A). At this time, when the upper limit of the allowable value of signal strength is still A, when the size of the foreign body is (-)to Even if the size is smaller than , it will be judged as a foreign object. This may reduce productivity.
此外,在將照明條件從照明條件1變更為照明條件3的情況下,與異物的大小相當的訊號強度成為訊號強度C(C<A)。此時,在訊號強度的容許值的上限仍然為A時,在異物的大小為至(+)的大小的情況下亦會不判定為異物。由此,具有在發生解析度不良的狀態下繼續生產之虞。 In addition, when the lighting condition is changed from lighting condition 1 to lighting condition 3, the size of the foreign object The signal strength becomes C (C<A). At this time, when the upper limit of the allowable value of the signal strength is still A, the size of the foreign object is to Even if the size is (+), it will not be identified as a foreign object. Therefore, there is a risk of continuing production with poor resolution.
如此般,存在伴隨照明條件的變更而無法進行正確的異物檢查之虞。因此,在本實施方式中,提供一 種異物檢查裝置20,可伴隨照明條件的變更,變更表示由受光部2接收的光量的訊號的容許值。在圖2之例中,在將照明條件從照明條件1變更為照明條件2的情況下,將訊號強度的容許值的上限從A變更為B,在將照明條件從照明條件1變更為照明條件3的情況下,將訊號強度的容許值的上限從A變更為C。 As described above, there is a risk that accurate foreign object detection may become impossible due to changes in lighting conditions. Therefore, this embodiment provides a foreign object detection device 20 that can change the permissible value of the signal representing the amount of light received by the light receiving unit 2 as lighting conditions change. In the example of Figure 2 , when the lighting conditions change from lighting condition 1 to lighting condition 2, the upper limit of the permissible signal intensity is changed from A to B. When the lighting conditions change from lighting condition 1 to lighting condition 3, the upper limit of the permissible signal intensity is changed from A to C.
另外,在本實施方式中,使用曝光裝置的曝光光源作為異物檢查用的光源,故亦需要根據曝光程序的變化,適當地設定光源的曝光量、原版台的驅動速度、原版7與撓曲校正構件6之間的氣密室的氣壓如此之曝光條件。此曝光條件,為在上述中說明的照明條件之一;此曝光條件,為在使用曝光裝置的曝光光源作為異物檢查用的光源時可酌情變更的參數。 Furthermore, in this embodiment, the exposure light source of the exposure device is used as the light source for foreign matter detection. Therefore, exposure conditions such as the light source exposure dose, the drive speed of the plate stage, and the air pressure in the airtight chamber between the plate 7 and the deflection correction member 6 must be appropriately set according to changes in the exposure process. This exposure condition is one of the lighting conditions described above; it is a parameter that can be adjusted as appropriate when using the exposure light source of the exposure device as the light source for foreign matter detection.
判定部22,可根據預先記錄的實測結果或模擬結果來變更容許值的範圍。或者,亦可根據預先記錄的實測結果或模擬結果來預測容許值的上限。 The determination unit 22 may change the range of the allowable value based on pre-recorded actual measurement results or simulation results. Alternatively, the upper limit of the allowable value may be predicted based on pre-recorded actual measurement results or simulation results.
另外,如在上述中說明,在照明條件變化時,輸入到判定部22的訊號強度發生變化。亦可對應於該變化而使異物檢查裝置20的異物檢查條件變化。作為異物檢查條件,亦可使至少與異物的大小的容許值的上限相當的輸出強度落入到受光部的輸出強度的動態範圍內的方式,設定受光部的累積時間、輸出放大值。另外,為了透過驅動原版台8而不重複地正確地檢查撓曲校正構件6上的全部檢查區域,亦可設定受光部的輸出訊號的取得週期。 在異物檢查條件被變更的情況下,亦可依異物檢查條件來變更容許值。 As described above, when lighting conditions change, the signal intensity input to the determination unit 22 also changes. The foreign object detection conditions of the foreign object detection device 20 may also be changed in response to these changes. As foreign object detection conditions, the integration time and output amplification value of the light receiving unit may be set so that an output intensity at least equivalent to the upper limit of the permissible value for the foreign object size falls within the dynamic range of the light receiving unit's output intensity. Furthermore, the cycle for acquiring the light receiving unit's output signal may be set to accurately inspect the entire inspection area on the deflection correction member 6 without repetition by driving the master stage 8. If the foreign object detection conditions are changed, the permissible value may also be changed in accordance with the foreign object detection conditions.
另外,在上述說明中,說明了有關將容許值設定為0以上且設定為任意的數值以下之例,惟不限於此。例如,在根據圖3所示的訊號強度的倒數而執行異物檢查的情況(即,隨著異物尺寸變大而訊號強度變小的情況)下,亦可將容許值設定為比任意的數值大的範圍。本實施方式中的容許值的變更,為容許值的上限值或下限值的變更。另外,亦可設定複數個容許值,亦可進行在第1個容許值下檢測有異物、在第2個容許值下停止生產如此之運用。 Furthermore, while the above description describes an example where the tolerance value is set above 0 and below an arbitrary value, this is not limiting. For example, when performing foreign object detection based on the inverse of the signal strength as shown in Figure 3 (i.e., when the signal strength decreases as the foreign object size increases), the tolerance value can be set to a range greater than the arbitrary value. In this embodiment, the change in the tolerance value refers to a change in the upper or lower limit of the tolerance value. Furthermore, multiple tolerance values can be set, and a foreign object can be detected at the first tolerance value and production can be stopped at the second tolerance value.
在本實施方式中,雖設想了在曝光處理中使用曝光光源並透過配置於撓曲校正構件6的附近的異物檢查裝置20檢查撓曲校正構件6上的異物,惟不限於此。亦可透過與曝光光源不同的檢查用的光源進行異物檢查。 In this embodiment, while the exposure light source is used during the exposure process, and the foreign matter detection device 20 disposed near the deflection correction member 6 is used to detect foreign matter, this is not limiting. Foreign matter detection may also be performed using a light source for inspection that is separate from the exposure light source.
根據以上,在本實施方式中,判定部22,可根據是從光源照射的光對檢查區域進行照明的條件的照明條件來變更表示由受光部2接收的光量的訊號的容許值。由此,可抑制異物檢查中的精度的降低。 As described above, in this embodiment, the determination unit 22 can change the permissible value of the signal representing the amount of light received by the light receiving unit 2 based on the lighting conditions under which the inspection area is illuminated by light emitted from the light source. This can suppress a decrease in accuracy in foreign matter detection.
本發明的實施方式之物品之製造方法,例如適於製造平板顯示器(FPD)、半導體裝置、感測器、光學元件等的物品。本實施方式的物品之製造方法,包括:檢測原版7 或者撓曲校正構件6上的異物的程序(異物檢查程序);以及除去在該異物檢查程序中檢測到的異物的程序(異物除去程序)。此外,異物檢查程序,如在第1實施方式中說明般,可根據是從光源照射的光對檢查區域進行照明的條件的照明條件來變更訊號強度(表示由受光部2接收的光量的訊號的強度)的容許值。再者,該製造方法包括:在被塗布到基板上的感光劑上透過利用了上述的曝光裝置的曝光而形成潛像圖案,獲得曝光基板的程序(曝光程序);以及對透過該程序形成潛像圖案的曝光基板進行顯影,獲得顯影基板的程序(顯影程序)。再者,該製造方法,包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、接合、封裝等)。本實施方式的物品之製造方法,比起歷來的方法,在物品之性能、品質、生產性、生產成本中的至少一者方面有利。 The manufacturing method of an article according to an embodiment of the present invention is suitable for manufacturing articles such as flat panel displays (FPDs), semiconductor devices, sensors, and optical components. The manufacturing method of this embodiment includes a process for detecting foreign matter on the original plate 7 or the deflection correction member 6 (a foreign matter detection process); and a process for removing foreign matter detected during the foreign matter detection process (a foreign matter removal process). Furthermore, as described in the first embodiment, the foreign matter detection process can change the permissible value of the signal intensity (the intensity of the signal indicating the amount of light received by the light receiving unit 2) based on the lighting conditions under which the inspection area is illuminated by light emitted from the light source. Furthermore, the manufacturing method includes: forming a latent pattern on a photosensitive agent applied to a substrate by exposure using the aforementioned exposure apparatus to obtain an exposed substrate (exposure process); and developing the exposed substrate on which the latent pattern is formed by this process to obtain a developed substrate (development process). Furthermore, the manufacturing method includes other well-known processes (oxidation, film formation, evaporation, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of this embodiment is advantageous over conventional methods in at least one of the following aspects: article performance, quality, productivity, and production cost.
以上,雖說明有關本發明之優選實施方式,惟本發明當然不限定於此等實施方式,在其要旨之範圍內,可進行各種的變形及變更。 While the above describes preferred embodiments of the present invention, the present invention is not limited to these embodiments and various modifications and alterations are possible within the scope of its gist.
依本發明時,可提供有利於抑制異物檢查中的精度的降低的異物檢查裝置。 According to the present invention, a foreign matter detection device can be provided that is advantageous in suppressing a decrease in accuracy during foreign matter detection.
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| WO2010098179A1 (en) * | 2009-02-27 | 2010-09-02 | 株式会社日立ハイテクノロジーズ | Surface inspecting apparatus and method for correcting same |
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| JP2004271421A (en) | 2003-03-11 | 2004-09-30 | Nikon Corp | Foreign matter inspection apparatus and method, and exposure apparatus |
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