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TWI893971B - Valve assembly for controlling flow, method for controlling flow and substrate processing apparatus including the same - Google Patents

Valve assembly for controlling flow, method for controlling flow and substrate processing apparatus including the same

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Publication number
TWI893971B
TWI893971B TW113133380A TW113133380A TWI893971B TW I893971 B TWI893971 B TW I893971B TW 113133380 A TW113133380 A TW 113133380A TW 113133380 A TW113133380 A TW 113133380A TW I893971 B TWI893971 B TW I893971B
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TW
Taiwan
Prior art keywords
valve
gas
supply
air
pressure
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TW113133380A
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Chinese (zh)
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TW202526203A (en
Inventor
安致遠
金正來
梁承財
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南韓商圓益Ips股份有限公司
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Publication of TW202526203A publication Critical patent/TW202526203A/en
Application granted granted Critical
Publication of TWI893971B publication Critical patent/TWI893971B/en

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Classifications

    • H10P72/0402
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K1/00Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
    • F16K1/32Details
    • F16K1/52Means for additional adjustment of the rate of flow
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00Actuating devices; Operating means; Releasing devices
    • F16K31/02Actuating devices; Operating means; Releasing devices electric; magnetic
    • F16K31/06Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00Actuating devices; Operating means; Releasing devices
    • F16K31/12Actuating devices; Operating means; Releasing devices actuated by fluid
    • F16K31/122Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston
    • H10P14/6339
    • H10P72/00
    • H10P72/70
    • H10P95/00

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Flow Control (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid-Driven Valves (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本發明的流量控制用閥組件包括:氣體進出部,包含流入基板處理氣體的流入流路、連接到執行基板處理的製程腔室而供給所述氣體的流出流路及連接流入流路和流出流路的閥隔室;閥部,包含膜閥,設置在流入流路的上部、加壓桿,對膜閥施壓而調節流入流路的開口率和所述氣體的流量、及氣動調節單元,控制用於加壓桿的升降驅動的閥調節空氣的供給,從而調節通過閥隔室的所述氣體的流量;以及控制部,控制氣體進出部及閥部的操作。所述控制部如下控制氣動調節單元的驅動:以第一供給壓力供給閥調節空氣而開啟膜閥之後,以低於第一供給壓力的第二供給壓力供給閥調節空氣,以及在第二供給壓力下關閉膜閥。The flow control valve assembly of the present invention includes: a gas inlet and outlet portion, including an inlet flow path for gas flowing into a substrate processing gas, an outlet flow path connected to a process chamber for performing substrate processing and supplying the gas, and a valve compartment connecting the inlet flow path and the outflow flow path; a valve portion, including a diaphragm valve, arranged at the upper part of the inlet flow path, a pressure rod, which applies pressure to the diaphragm valve to adjust the opening rate of the inlet flow path and the flow rate of the gas, and a pneumatic adjustment unit, which controls the valve used for lifting and lowering the pressure rod to adjust the supply of air, thereby adjusting the flow rate of the gas passing through the valve compartment; and a control portion, which controls the operation of the gas inlet and outlet portion and the valve portion. The control portion controls the driving of the pneumatic regulating unit as follows: after the diaphragm valve is opened by supplying the valve regulating air at a first supply pressure, the diaphragm valve is controlled by supplying the valve regulating air at a second supply pressure lower than the first supply pressure, and the diaphragm valve is closed at the second supply pressure.

Description

流量控制用閥組件、流量控制方法及包含該閥組件的基板處理裝置Flow control valve assembly, flow control method, and substrate processing device including the valve assembly

本發明涉及流量控制用閥組件、流量控制方法及包含該閥組件的基板處理裝置。 The present invention relates to a flow control valve assembly, a flow control method, and a substrate processing device including the valve assembly.

近來,隨著半導體元件的集成度的增加,需要對基板處理裝置進行精密的控制。 Recently, with the increasing integration density of semiconductor devices, precise control of substrate processing equipment is required.

一般來說,透過在真空氣氛的基板處理裝置中執行薄膜沉積、蝕刻等多種基板處理製程來製造半導體元件。所述基板處理製程是在將基板安置在製程腔室內的基板支撐部的狀態下,透過氣體噴射部向基板噴射製程氣體來執行。在這種過程中,薄膜的沉積速度和均勻度等特性會受到為執行基板處理製程而供給的製程氣體的流量的影響。 Generally, semiconductor devices are manufactured by performing various substrate processing processes, such as thin film deposition and etching, in a vacuum atmosphere within a substrate processing apparatus. These substrate processing processes are performed by spraying process gases onto the substrate via a gas injection unit while the substrate is positioned on a substrate support within a processing chamber. During this process, characteristics such as the deposition rate and uniformity of the thin film are affected by the flow rate of the process gas supplied to perform the substrate processing process.

所述基板處理裝置包括進行基板處理的製程腔室和向製程腔室內部供給用於基板處理的製程氣體的氣體供給裝置,所述氣體供給裝置包括使原料汽化的汽化器、連接所述汽化器和製程腔室的供給管道、及為了調節流體的流動而設置在所述供給管道上的複數個流量控制閥和感測器。尤其,所述流量控制閥上設置有一個電磁閥,電磁閥透過向閥致動器施加空壓來控制閥的開啟和關閉操作。 The substrate processing apparatus includes a process chamber for substrate processing and a gas supply system for supplying process gases used for substrate processing into the process chamber. The gas supply system includes a vaporizer for vaporizing a raw material, a supply pipeline connecting the vaporizer and the process chamber, and a plurality of flow control valves and sensors disposed on the supply pipeline to regulate the flow of the fluid. Specifically, the flow control valve is provided with an electromagnetic valve that controls its opening and closing by applying air pressure to a valve actuator.

但是,具有所述結構的流量控制閥採用了利用一個電磁閥來調節空壓的方式,當空壓驅動的閥致動器的空壓較高時,會呈現閥的開啟速度變快但關閉有所延遲的特性。相反地,當空壓驅動的閥致動器的空壓較低時,所述流量控制閥呈現出閥的開啟時間延遲且關閉速度變快的特性。 However, this flow control valve structure utilizes a solenoid valve to regulate air pressure. When the air pressure in the valve actuator is high, the valve opens faster but closes later. Conversely, when the air pressure in the valve actuator is low, the valve opens later and closes faster.

如上所述,習知的流量控制閥存在空壓條件導致關閉或開啟時間有所延遲而高速開閉控制較難的問題,因此有必要研究能夠彌補這一問題的方法。 As mentioned above, conventional flow control valves have a problem in that air pressure conditions cause a delay in closing or opening time, making high-speed opening and closing control difficult. Therefore, it is necessary to research methods to compensate for this problem.

根據一個實施例,提供一種可實現高速開閉控制的流體流量控制用閥組件及流體流量控制方法的技術內容。 According to one embodiment, a valve assembly for fluid flow control and a fluid flow control method capable of achieving high-speed on-off control are provided.

基於實施例的流量控制用閥組件包括:氣體進出部,包含流入基板處理氣體的流入流路、連接到執行基板處理的製程腔室而供給所述氣體的流出流路及連接所述流入流路及所述流出流路的閥隔室;閥部,包含膜閥,設置在所述流入流路的上部、加壓桿,對所述膜閥施壓而調節所述流入流路的開口率和所述氣體的流量、及氣動調節單元,控制用於所述加壓桿的升降驅動的閥調節空氣的供給,從而調節通過所述閥隔室的所述氣體的流量;以及控制部,控制所述閥部的操作,其中,所述控制部控制所述氣動調節單元的驅動,以第一供給壓力供給所述閥調節空氣而開啟所述膜閥之後,以低於所述第一供給壓力的第二供給壓力供給所述閥調節空氣,在所述第二供給壓力下關閉所述膜閥。 The flow control valve assembly according to the embodiment includes: a gas inlet and outlet portion, including an inlet flow path for the substrate processing gas, an outflow flow path connected to a process chamber for performing substrate processing and supplying the gas, and a valve compartment connecting the inflow flow path and the outflow flow path; a valve portion, including a diaphragm valve, which is arranged at the upper part of the inflow flow path, a pressure rod, which applies pressure to the diaphragm valve to adjust the opening rate of the inflow flow path and the flow rate of the gas, and a pneumatic adjustment unit, which controls A valve regulating air supply for driving the lifting and lowering of the pressure rod, thereby regulating the flow rate of the gas passing through the valve compartment; and a control unit for controlling the operation of the valve unit, wherein the control unit controls the driving of the pneumatic regulating unit to supply the valve regulating air at a first supply pressure to open the diaphragm valve, and then supply the valve regulating air at a second supply pressure lower than the first supply pressure to close the diaphragm valve.

根據一個實施例,所述閥部包含:閥主體,內部形成容納空間,一側連接到至少一個空氣供給管道,使得所述閥調節空氣進出;以及活塞,劃分所述閥主體的容納空間,在劃分的空間中的其中一個,基於閥調節空氣的進出而沿著所述閥主體的內壁面升降,從而使所述加壓桿升降。並且,所述閥部包含:彈性恢復部件,設置在所述活塞的一側而提供彈性力,使得所述加壓桿對所述膜閥施壓而關閉所述流入流路。 According to one embodiment, the valve comprises: a valve body defining an internal storage space and having one side connected to at least one air supply pipe, enabling the valve to regulate air flow; and a piston that divides the storage space within the valve body and rises and falls along the inner wall of the valve body in response to the flow of air regulated by the valve, thereby causing the pressure rod to rise and fall. Furthermore, the valve comprises an elastic return member disposed on one side of the piston to provide an elastic force, causing the pressure rod to pressurize the diaphragm valve and close the inflow path.

根據一個實施例,所述閥部包含:閥主體,連接到第一空氣供給管道及第二空氣供給管道;以及氣動調節單元,具有分別設置在所述第一空氣供給管道及所述第二空氣供給管道的第一電磁閥及第二電磁閥,所述控制部在開啟所述第一電磁閥並以所述第一供給壓力供給所述閥調節空氣之後,開啟所述第二電磁閥並關閉所述第一電磁閥,以所述第二供給壓力供給所述閥調節空氣,所述第一電磁閥及所述第二電磁閥的最大供給壓力彼此不同。 According to one embodiment, the valve includes: a valve body connected to a first air supply pipe and a second air supply pipe; and a pneumatic regulating unit having a first solenoid valve and a second solenoid valve, respectively disposed in the first air supply pipe and the second air supply pipe. After the control unit opens the first solenoid valve and supplies the valve-regulated air at the first supply pressure, it opens the second solenoid valve and closes the first solenoid valve to supply the valve-regulated air at the second supply pressure. The maximum supply pressures of the first and second solenoid valves are different.

根據一個實施例,所述氣動調節單元還包含:感應感測器,設置在所述第一電磁閥的一側而用於確認所述第一電磁閥的開放狀態。 According to one embodiment, the pneumatic adjustment unit further includes: an induction sensor disposed on one side of the first solenoid valve and used to confirm the open state of the first solenoid valve.

根據一個實施例,所述第一電磁閥的最大供給壓力可以是0.45至1MPa,而所述第二電磁閥的最大供給壓力可以是0.1至小於0.45MPa。尤其,所述第一電磁閥的最大供給壓力可以是0.6MPa,而所述第二電磁閥最大供給壓力可以是0.3MPa。 According to one embodiment, the maximum supply pressure of the first solenoid valve may be 0.45 to 1 MPa, while the maximum supply pressure of the second solenoid valve may be 0.1 to less than 0.45 MPa. In particular, the maximum supply pressure of the first solenoid valve may be 0.6 MPa, while the maximum supply pressure of the second solenoid valve may be 0.3 MPa.

根據一個實施例,所述閥部包含具有設置在所述空氣供給管道的氣動可變電磁閥的氣動調節單元;所述控制部在對所述氣動可變電磁閥施加第一電源並以所述第一供給壓力供給所述閥調節空氣之後,向所述氣動可變電磁閥施加電流量低於所述第一電源的第二電源,從而以所述第二供給壓力供給所述閥調節空氣,所述氣動可變電磁閥可根據被施加的電源的電流量調節開口率。此時,所述第一供給壓力為0.45至1MPa,而所述第二供給壓力為0.1至小於0.45MPa。 According to one embodiment, the valve portion includes a pneumatic regulating unit having a pneumatically variable solenoid valve disposed in the air supply conduit. After applying a first power source to the pneumatically variable solenoid valve and supplying the valve-regulated air at the first supply pressure, the control portion applies a second power source having a lower current flow rate than the first power source to the pneumatically variable solenoid valve, thereby supplying the valve-regulated air at the second supply pressure. The pneumatically variable solenoid valve can adjust its opening ratio based on the current flow rate of the applied power source. In this case, the first supply pressure is 0.45 to 1 MPa, while the second supply pressure is 0.1 to less than 0.45 MPa.

另外,基於實施例的基板處理裝置可包括:製程腔室,內部形成用於執行基板處理的處理空間;基板支撐部,設置在所述處理空間內部而安置基板;氣體噴射部,為了所述基板處理而向所述處理空間噴射氣體;氣體供給部,向所述氣體噴射部供給製程氣體;以及如請求項1至9中任一項所述的流量控制用閥組件,設置在所述氣體供給部與所述氣體噴射部之間而調節氣體的流量。 Furthermore, a substrate processing apparatus according to an embodiment may include: a process chamber forming a processing space for performing substrate processing; a substrate support portion disposed within the processing space to accommodate a substrate; a gas injection portion to inject gas into the processing space for substrate processing; a gas supply portion to supply process gas to the gas injection portion; and a flow control valve assembly according to any one of claims 1 to 9, disposed between the gas supply portion and the gas injection portion to adjust the flow rate of the gas.

根據一個實施例,應用所述流量控制用閥組件的流量控制方法包括如下步驟:接收氣體供給訊號並以第一供給壓力供給閥調節空氣,開啟所述膜閥,允許氣體通過氣體進出部流動,向製程腔室供給氣體;以低於所述第一供給壓力的第二供給壓力改變所述閥調節空氣的供給,保持所述製程腔室中所述氣體的供給;以及接收氣體阻斷訊號而阻斷所述閥調節空氣的供給,阻斷氣體通過所述氣體進出部流動。 According to one embodiment, a flow control method using the flow control valve assembly includes the following steps: receiving a gas supply signal and supplying a valve-regulated air at a first supply pressure, thereby opening the diaphragm valve and allowing gas to flow through the gas inlet and outlet to supply gas to a process chamber; changing the supply of the valve-regulated air at a second supply pressure lower than the first supply pressure to maintain the gas supply to the process chamber; and receiving a gas blocking signal to block the supply of the valve-regulated air, thereby blocking the flow of gas through the gas inlet and outlet.

根據一個實施例,向所述製程腔室供給氣體的步驟還包括如下步驟:確認是否以所述第一供給壓力供給閥調節空氣。 According to one embodiment, the step of supplying gas to the process chamber further includes the step of confirming whether the air is regulated by the supply valve at the first supply pressure.

基於實施例的流量控制用閥組件在初期施加空壓時,在有利於開啟的供給壓力條件下開啟閥,然後改變供給壓力而以有利於關閉的供給壓力條件開啟閥, 之後阻斷氣體供給,從而可以實現高速開閉控制。據此,可以精密地控制製程氣體的流量,大幅改善基板處理裝置的製程穩定性。 The flow control valve assembly in this embodiment opens the valve at a supply pressure favorable for opening when air pressure is initially applied. It then changes the supply pressure to open the valve at a pressure favorable for closing. Then, the gas supply is cut off, enabling high-speed opening and closing control. This allows precise control of process gas flow rates, significantly improving process stability in substrate processing equipment.

1:基板處理裝置 1: Substrate processing equipment

10、10':閥組件 10, 10': Valve assembly

20:製程腔室 20: Processing Chamber

21:腔室主體 21: Chamber body

22:上蓋 22: Upper cover

30:基板支撐部 30: Substrate support

40:氣體噴射部 40: Gas injection unit

41:氣體管道 41: Gas pipeline

50:氣體供給部 50: Gas supply unit

100:氣體進出部 100: Gas inlet and outlet

110:流入流路 110: Inflow path

111:流入孔 111: Inflow hole

130:流出流路 130:Outflow path

131:流出孔 131: Outflow hole

150:閥隔室 150: Valve compartment

200:閥部 200:Valve department

210:閥主體 210: Valve body

211:第一空氣供給管道(空氣供給管道) 211: First air supply pipe (air supply pipe)

213:第二空氣供給管道(空氣供給管道) 213: Second air supply pipe (air supply pipe)

215:內部流路 215: Internal flow path

220:加壓桿 220: Pressure rod

230:活塞 230: Piston

240:彈性恢復部件 240: Elastic recovery component

250:膜閥 250: Diaphragm Valve

260、260':氣動調節單元 260, 260': Pneumatic adjustment unit

261:第一電磁閥(電磁閥) 261: First solenoid valve (solenoid valve)

263:第二電磁閥(電磁閥) 263: Second solenoid valve (solenoid valve)

265:氣動可變電磁閥(電磁閥) 265: Pneumatic variable solenoid valve (solenoid valve)

267:感應感測器 267: Sensor

300:控制部 300: Control Department

S:基板 S:Substrate

S100~S300:步驟 S100~S300: Steps

圖1是顯示基於實施例的基板處理裝置的結構圖;圖2是顯示允許氣體流動的狀態下基於實施例1的流量控制用閥組件的結構圖;圖3是顯示阻斷氣體流動的狀態下基於實施例1的流量控制用閥組件的結構圖;圖4是顯示允許氣體流動的狀態下基於實施例2的流量控制用閥組件的結構圖;圖5是顯示阻斷氣體流動的狀態下基於實施例2的流量控制用閥組件的結構圖;以及圖6是顯示基於實施例的流量控制方法的製程圖。 Figure 1 is a structural diagram of a substrate processing apparatus according to an embodiment; Figure 2 is a structural diagram of a flow control valve assembly according to Embodiment 1, in a state where gas flow is permitted; Figure 3 is a structural diagram of the flow control valve assembly according to Embodiment 1, in a state where gas flow is blocked; Figure 4 is a structural diagram of the flow control valve assembly according to Embodiment 2, in a state where gas flow is permitted; Figure 5 is a structural diagram of the flow control valve assembly according to Embodiment 2, in a state where gas flow is blocked; and Figure 6 is a process diagram illustrating a flow control method according to an embodiment.

圖1是顯示基於實施例的基板處理裝置的結構圖。 FIG1 is a structural diagram showing a substrate processing apparatus according to an embodiment.

參照圖1,基於實施例的基板處理裝置1包括:流量控制用閥組件10、10'、製程腔室20、基板支撐部30、氣體噴射部40、及氣體供給部50。 1 , a substrate processing apparatus 1 according to an embodiment includes flow control valve assemblies 10 , 10 ′, a process chamber 20 , a substrate support portion 30 , a gas injection portion 40 , and a gas supply portion 50 .

所述製程腔室20的內部形成用於處理基板S的處理空間。所述製程腔室20包括位於腔室主體21及腔室主體21的側壁部上端的上蓋22而保持氣密。所述製程腔室20連接到排氣口及真空泵,以排出所述處理空間的製程氣體並調節所述處理空間的真空度。所述製程腔室20可具有用於基板處理的常規的多種形態。 The interior of the process chamber 20 forms a processing space for processing substrates S. The process chamber 20 includes a chamber body 21 and a cover 22 located on the upper ends of the sidewalls of the chamber body 21 to maintain an airtight seal. The process chamber 20 is connected to an exhaust port and a vacuum pump to exhaust process gases from the processing space and adjust the vacuum level within the processing space. The process chamber 20 can have various conventional configurations used for substrate processing.

所述基板支撐部30設置在製程腔室20的處理空間內部,使得基板S安置在所述處理空間內。所述基板支撐部30設置在製程腔室20,以使基板S與氣體噴射部40相對。基板支撐部30包括用於安置基板S的基座等。 The substrate support 30 is disposed within the processing space of the process chamber 20 , allowing the substrate S to be positioned within the processing space. The substrate support 30 is positioned within the process chamber 20 so that the substrate S faces the gas injection unit 40 . The substrate support 30 includes a base, etc., for positioning the substrate S.

所述氣體噴射部40以與基板支撐部30相對地設置在製程腔室20,可向所述處理空間噴射製程氣體。所述氣體噴射部40可具有噴頭(shower head)形態、噴嘴(nozzle)形態等多種形態,氣體噴射部40為噴頭形態時,氣體噴射 部40以局部覆蓋製程腔室20上部的形態結合到製程腔室20。尤其,氣體噴射部40以腔室主體21的罩形態結合到上蓋22。 The gas injection unit 40 is disposed in the process chamber 20 opposite the substrate support unit 30 and is capable of injecting process gas into the processing space. The gas injection unit 40 can have various configurations, such as a shower head or a nozzle. When the gas injection unit 40 is a shower head, it is attached to the process chamber 20 in a manner that partially covers the upper portion of the process chamber 20. In particular, the gas injection unit 40 is attached to the upper cover 22 in the form of a hood over the chamber body 21.

所述氣體供給部50是向氣體噴射部40供給所述製程氣體的裝置,連接到氣體噴射部40。 The gas supply unit 50 is a device that supplies the process gas to the gas injection unit 40 and is connected to the gas injection unit 40.

所述氣體供給部50從液體源或固體源產生製程氣體來進行供給。透過所述流量控制用閥組件10、10'控制所述製程氣體的流量,從而供給到氣體噴射部40。 The gas supply unit 50 generates process gas from a liquid or solid source. The flow rate of the process gas is controlled by the flow control valve assemblies 10 and 10', and the gas is supplied to the gas injection unit 40.

基於實施例的基板處理裝置1可包括:流量控制用閥組件10、10',設置在連接到氣體供給部50而運送製程氣體的氣體管道41的一側,用於控制所述製程氣體的流量。 The substrate processing apparatus 1 according to the embodiment may include: a flow control valve assembly 10, 10', which is disposed on one side of a gas pipeline 41 connected to a gas supply unit 50 and transporting a process gas, and is used to control the flow rate of the process gas.

基於實施例的流量控制用閥組件10、10'以陣列結構設置在氣體噴射部40上或與一般用品質流量控制器一起設置在氣體箱(附圖未顯示)內。 The flow control valve assemblies 10, 10' according to the embodiment are arranged in an array structure on the gas ejection portion 40 or are arranged in a gas box (not shown) together with a general mass flow controller.

基於實施例的基板處理裝置1可透過流量控制用閥組件10、10'實現流量供給的高速控制。據此,基於實施例的基板處理裝置1可精密控制製程氣體的流量並透過氣體噴射部40供給到基板S上。因此,可以大幅改善基於基板處理裝置1的製程穩定性。 The substrate processing apparatus 1 according to the embodiment achieves high-speed flow control through the flow control valve assemblies 10 and 10'. Consequently, the substrate processing apparatus 1 according to the embodiment can precisely control the flow of process gas and supply it to the substrate S through the gas injection unit 40. Consequently, the process stability of the substrate processing apparatus 1 can be significantly improved.

基於實施例的基板處理裝置1可以是化學氣相沉積(chemical vapor deposition,CVD)裝置、電漿增強化學氣相沉積(plasma enhanced chemical vapor deposition,PECVD)裝置、原子層沉積(atomic layer deposition,ALD)裝置中的任意一個。 The substrate processing apparatus 1 according to the embodiment can be any one of a chemical vapor deposition (CVD) apparatus, a plasma enhanced chemical vapor deposition (PECVD) apparatus, and an atomic layer deposition (ALD) apparatus.

以下詳細描述基於實施例的流量控制用閥組件10、10'。 The flow control valve assemblies 10 and 10' according to the embodiments are described in detail below.

基於實施例的流量控制用閥組件10、10'用於控制諸如用於基板處理的氣體等流體的流量,可結合到流體的供給管道上。並且,基於實施例的流量控制用閥組件10、10'也可作為汽化裝置的一部分而設置到所述汽化裝置內。 The flow control valve assemblies 10 and 10' according to the embodiments are used to control the flow of fluids, such as gases used in substrate processing, and can be connected to fluid supply lines. Furthermore, the flow control valve assemblies 10 and 10' according to the embodiments can also be installed within a vaporizer as part of the vaporizer.

具體地說,所述流量控制用閥組件10、10'用於調節流體的流量。作為一例,所述流量控制用閥組件10、10'施加空壓來控制膜閥250的開啟及關閉,調節向製程腔室20流動的流體的流量。 Specifically, the flow control valve assemblies 10 and 10' are used to regulate the flow of a fluid. For example, the flow control valve assemblies 10 and 10' apply air pressure to control the opening and closing of the diaphragm valve 250, thereby regulating the flow of fluid into the process chamber 20.

圖2是顯示允許氣體流動的狀態下基於實施例1的流量控制用閥組件10的結構圖;圖3是顯示阻斷氣體流動的狀態下基於實施例1的流量控制用 閥組件10的結構圖;圖4是顯示允許氣體流動的狀態下基於實施例2的流量控制用閥組件10'的結構圖;以及圖5是顯示阻斷氣體流動的狀態下基於實施例2的流量控制用閥組件10'的結構圖。 Figure 2 is a structural diagram showing the flow control valve assembly 10 according to Example 1, in a state allowing gas flow; Figure 3 is a structural diagram showing the flow control valve assembly 10 according to Example 1, in a state blocking gas flow; Figure 4 is a structural diagram showing the flow control valve assembly 10' according to Example 2, in a state allowing gas flow; and Figure 5 is a structural diagram showing the flow control valve assembly 10' according to Example 2, in a state blocking gas flow.

參照圖2至圖5,基於實施例的流量控制用閥組件10、10'包括:氣體進出部100、閥部200、及控制部300。 2 to 5 , the flow control valve assembly 10 or 10 ′ according to the embodiment includes a gas inlet and outlet portion 100 , a valve portion 200 , and a control portion 300 .

所述氣體進出部100具有為氣體流動和流通提供通道的作用。為此,所述氣體進出部100可包括:流入流路110、流出流路130、及閥隔室150。 The gas inlet and outlet portion 100 provides a channel for gas flow and circulation. To this end, the gas inlet and outlet portion 100 may include an inlet flow path 110, an outlet flow path 130, and a valve compartment 150.

所述流入流路110提供氣體流入的通道。所述流入流路110的一端通過氣體管道41連接到氣體供給部50,從而氣體能夠流入。所述流入流路110的另一端形成流入孔111,氣體通過流入孔111後,沿著所述閥隔室150移動,通過流出流路130供給到製程腔室20。所述流入孔111的上部設置有膜閥250,以控制其打開及關閉。所述流入孔111開啟時,所述氣體流動而流入流出流路130,所述流入孔111關閉時,阻斷氣體的流通。 The inlet channel 110 provides a passage for gas to flow in. One end of the inlet channel 110 is connected to the gas supply unit 50 via a gas pipe 41, allowing gas to flow in. The other end of the inlet channel 110 forms an inlet hole 111. After passing through the inlet hole 111, the gas moves along the valve compartment 150 and is supplied to the process chamber 20 through the outflow channel 130. A diaphragm valve 250 is installed above the inlet hole 111 to control its opening and closing. When the inlet hole 111 is open, the gas flows into the outflow channel 130. When the inlet hole 111 is closed, the gas flow is blocked.

所述流出流路130的一端連接到執行基板處理的製程腔室20,從而形成將通過流入流路110流動的氣體供給到製程腔室20的通道。所述流出流路130的另一端形成流出孔131,當所述流入孔111開啟時,可流入所述氣體。所述氣體可以是指汽化的氣體,即用於基板處理的製程氣體。所述氣體可以是單一氣體或混合氣體。 One end of the outflow channel 130 is connected to the process chamber 20 where substrate processing is performed, forming a channel for supplying the gas flowing through the inflow channel 110 to the process chamber 20. The other end of the outflow channel 130 forms an outflow hole 131. When the inflow hole 111 is opened, the gas can flow in. The gas can be a vaporized gas, i.e., the process gas used for substrate processing. The gas can be a single gas or a mixed gas.

所述閥隔室150形成在所述流入流路110與流出流路130之間而提供用於連接所述流入流路110和流出流路130的空間。所述閥隔室150分別連接到所述流入孔111及流出孔131。所述閥隔室150上可設置有用於控制所述流入孔111的打開及關閉的膜閥250。所述閥隔室150可具有在上部設置用於控制所述膜閥250的操作的加壓桿且可升降的結構。 The valve compartment 150 is formed between the inflow channel 110 and the outflow channel 130, providing a space for connecting the inflow channel 110 and the outflow channel 130. The valve compartment 150 is connected to the inflow port 111 and the outflow port 131, respectively. A diaphragm valve 250 may be mounted on the valve compartment 150 to control the opening and closing of the inflow port 111. The valve compartment 150 may have a structure that can be raised and lowered, with a pressure rod mounted on the top to control the operation of the diaphragm valve 250.

所述閥部200可調節流入孔111的開口率,以調節通過所述氣體進出部100的所述氣體的流量。所述閥部200可根據閥調節空氣的流動而調節所述氣體進出部100的流入孔111的開口率。 The valve 200 can adjust the opening ratio of the inlet hole 111 to adjust the flow rate of the gas passing through the gas inlet and outlet 100. The valve 200 can adjust the opening ratio of the inlet hole 111 of the gas inlet and outlet 100 according to the valve regulating the flow of air.

為此,所述閥部200可包含:閥主體210、加壓桿220、活塞230、彈性恢復部件240、膜閥250、及氣動調節單元260、260'。 To this end, the valve portion 200 may include: a valve body 210, a pressure rod 220, a piston 230, an elastic recovery member 240, a diaphragm valve 250, and pneumatic adjustment units 260, 260'.

所述閥主體210的內部形成容納空間而使得閥調節空氣能夠進入,可容納加壓桿220、活塞230、彈性恢復部件240等。所述閥主體210可以是上部及下部封閉的圓形或多角形容器形狀。 The interior of the valve body 210 forms a receiving space to allow the valve regulating air to enter, and can accommodate the pressure rod 220, piston 230, elastic return member 240, etc. The valve body 210 can be in the shape of a circular or polygonal container with the upper and lower parts closed.

所述閥主體210與至少一個空氣供給管道211、213分別連接。 The valve body 210 is connected to at least one air supply pipe 211, 213 respectively.

參照圖1及圖2,基於實施例1的流量調節裝置10與複數個空氣供給管道211、213分別連接。 1 and 2 , the flow control device 10 according to Embodiment 1 is connected to a plurality of air supply pipes 211 and 213, respectively.

所述複數個空氣供給管道211、213分別與形成在所述閥主體210的容納空間內部的內部流路215連接,形成向所述閥主體210的內部容納空間供給閥調節空氣的通道。 The plurality of air supply pipes 211 and 213 are respectively connected to the internal flow path 215 formed within the internal storage space of the valve body 210, forming a channel for supplying valve-regulated air to the internal storage space of the valve body 210.

作為一例,所述閥主體210可具有上部與第一空氣供給管道211及第二空氣供給管道213分別連接的結構。附圖中雖然僅顯示設置兩個空氣供給管道211、213的結構,但可以根據需要來選擇性地調節設置個數。如上所述,若設置複數個空氣供給管道211、213,在所述複數個空氣供給管道211、213上分別設置一個最大供給壓力不同的電磁閥261、263而作為氣動調節單元260。 For example, the valve body 210 may have an upper portion connected to a first air supply pipe 211 and a second air supply pipe 213, respectively. While the attached diagram shows only two air supply pipes 211 and 213, the number of air supply pipes 211 and 213 can be selectively adjusted as needed. As described above, if multiple air supply pipes 211 and 213 are provided, solenoid valves 261 and 263 with different maximum supply pressures are installed on each of the air supply pipes 211 and 213, respectively, to serve as the pneumatic regulating unit 260.

參照圖3及圖4,基於實施例2的流量調節裝置10'可具有所述閥主體210連接一個空氣供給管道211的結構。所述一個空氣供給管道211上設置有氣動可變電磁閥265而作為氣動調節單元260'。 3 and 4 , the flow control device 10 ′ according to Embodiment 2 may have a structure in which the valve body 210 is connected to an air supply pipe 211 . A pneumatic variable solenoid valve 265 is provided on the air supply pipe 211 as a pneumatic control unit 260 ′.

並且,所述閥主體210的一側形成排氣流路(附圖未顯示),可將供給到容納空間內部的閥調節空氣噴射到外部。 Furthermore, an exhaust passage (not shown) is formed on one side of the valve body 210, which can eject the valve-regulated air supplied to the interior of the accommodating space to the outside.

所述加壓桿220的一部分容納到所述閥主體210的容納空間,一端容納到所述閥隔室150。所述加壓桿220位於設置到所述閥隔室150的膜閥250的上部。可對所述加壓桿220實施朝向下部的下降驅動來對膜閥250施壓,也可實施朝向上部的上升驅動而調節流入孔111的打開及關閉。所述加壓桿220可採用一端形成彈性加壓端而對膜閥250施壓之常規的多種形態的結構。 The pressure rod 220 is partially housed within the housing of the valve body 210, while one end is housed within the valve compartment 150. The pressure rod 220 is positioned above the diaphragm valve 250 mounted within the valve compartment 150. The pressure rod 220 can be driven downward to apply pressure to the diaphragm valve 250, or it can be driven upward to adjust the opening and closing of the inlet port 111. The pressure rod 220 can have various conventional structures, with one end forming an elastic pressure tip to apply pressure to the diaphragm valve 250.

所述活塞230劃分所述閥主體210的容納空間,在劃分的空間中的其中一個,基於閥調節空氣的供給或噴射而沿著閥主體210的內壁面升降驅動,從而使所述加壓桿220升降驅動。在所述活塞230的中心區域,加壓桿220以能夠接收驅動力的結構連接。 The piston 230 divides the housing space of the valve body 210. In response to the supply or injection of valve-regulated air, one of the divided spaces is lifted and lowered along the inner wall of the valve body 210, thereby lifting and lowering the pressure rod 220. At the center of the piston 230, the pressure rod 220 is connected to a structure capable of receiving driving force.

所述彈性恢復部件240容納到閥主體210的容納空間,設置到所述活塞230的一側而輔助所述活塞230的升降驅動。作為一例,所述彈性恢復部件 240具有如下作用:所述活塞230因空氣供給而形成的空壓而升降,之後解除空壓,使所述活塞230恢復到原來的位置。 The elastic return member 240 is housed within the housing of the valve body 210 and positioned on one side of the piston 230 to assist in the upward and downward movement of the piston 230. For example, the elastic return member 240 functions as follows: the piston 230 is raised and lowered by the air pressure generated by the air supply, and then the air pressure is released, returning the piston 230 to its original position.

所述彈性恢復部件240可呈現為一種螺旋彈簧,施加彈性力而使所述加壓桿220對膜閥250的上面加壓而關閉流入孔111。並且,所述彈性恢復部件240可產生彈性變形而基於螺線管的操作而使加壓桿上升,解除對膜閥250的施壓。 The elastic return member 240 can be a coil spring, exerting an elastic force to cause the pressure rod 220 to pressurize the top surface of the diaphragm valve 250, thereby closing the inflow port 111. Furthermore, the elastic return member 240 can elastically deform, causing the pressure rod to rise based on the operation of the solenoid, thereby releasing the pressure on the diaphragm valve 250.

所述膜閥250容納到所述閥隔室150的內部,設置在所述流入孔111的上部。所述膜閥250是具有隔膜形狀的彈性結構物,稱為密封墊片、隔膜閥、傘型止回閥等。 The diaphragm valve 250 is housed within the valve compartment 150 and is positioned above the inlet 111. The diaphragm valve 250 is a diaphragm-shaped elastic structure, also known as a sealing gasket, diaphragm valve, or umbrella-shaped check valve.

所述膜閥250具有基於加壓桿220的驅動而產生彈性變形因此打開及關閉所述流入孔111的作用。並且,膜閥250可透過調節加壓桿220的施壓條件來調節所述流入孔111的開啟面積,從而控制流體的流量。所述膜閥250在當所述活塞230的升降高度增加時,基於加壓桿220的施加壓力減少而擴大流入孔111的開啟面積。 The diaphragm valve 250 elastically deforms in response to the pressure of the pressure rod 220, thereby opening and closing the inlet 111. Furthermore, the diaphragm valve 250 can adjust the opening area of the inlet 111 by adjusting the pressure applied by the pressure rod 220, thereby controlling the flow rate of the fluid. As the piston 230's lift height increases, the diaphragm valve 250 expands the opening area of the inlet 111 as the pressure applied by the pressure rod 220 decreases.

所述氣動調節單元260透過控制向閥主體210供給的閥調節空氣來調節膜閥的開啟及阻斷。為此,所述氣動調節單元260包括連接到所述空氣供給管道211、213的電磁閥261、263、265。 The pneumatic regulating unit 260 regulates the opening and closing of the diaphragm valve by controlling the valve regulating air supplied to the valve body 210. To this end, the pneumatic regulating unit 260 includes electromagnetic valves 261, 263, and 265 connected to the air supply pipes 211 and 213.

透過電訊號控制所述電磁閥261、263、265,被施加電源時開啟,通過所述空氣供給管道211、213向閥主體210供給高壓的閥調節空氣。所述電磁閥261、263、265在電源被阻斷時關閉所述空氣供給管道211、213來阻斷閥調節空氣的供給。 The electromagnetic valves 261, 263, and 265 are controlled by electrical signals. When power is applied, they open and supply high-pressure valve-regulated air to the valve body 210 through the air supply pipes 211 and 213. When power is cut off, the electromagnetic valves 261, 263, and 265 close the air supply pipes 211 and 213, thereby blocking the supply of valve-regulated air.

尤其,基於實施例的流量控制用閥組件10、10'中,所述氣動調節單元260、260'可控制如下,在初期施加空壓時,以有利於開啟的第一供給壓力供給空氣,允許氣體的流動,之後改變供給壓力,以有利於關閉的第二供給壓力供給空氣而改變供給壓力,因此,可改善流量控制用閥組件10、10'的反應速度。 In particular, in the flow control valve assemblies 10, 10' according to the embodiments, the pneumatic regulating units 260, 260' can be controlled such that, when air pressure is initially applied, air is supplied at a first supply pressure that facilitates opening, allowing gas flow. The supply pressure is then changed to a second supply pressure that facilitates closing. This improves the responsiveness of the flow control valve assemblies 10, 10'.

具體地說,參照圖1及圖2,基於實施例1的流量控制用閥組件10中,所述氣動調節單元260包含最大供給壓力不同的複數個電磁閥261、263。 Specifically, referring to Figures 1 and 2, in the flow control valve assembly 10 according to Embodiment 1, the pneumatic regulating unit 260 includes a plurality of electromagnetic valves 261 and 263 with different maximum supply pressures.

在所述複數個空氣供給管道211、213上分別設置一個所述電磁閥261、263。所述複數個電磁閥261、263的最大供給壓力彼此不同。亦即,所述複數個電磁閥261、263的最大流路面積和最大供給壓力彼此不同。 One electromagnetic valve 261, 263 is installed on each of the air supply pipes 211, 213. The maximum supply pressures of the electromagnetic valves 261, 263 are different from each other. In other words, the maximum flow area and maximum supply pressure of the electromagnetic valves 261, 263 are different from each other.

基於實施例1的流量控制用閥組件10包括具有第一電磁閥261及第二電磁閥263的氣動調節單元260。透過電訊號分別控制所述複數個電磁閥261、263,可利用螺線管中產生的磁場的力來控制流體的流動。分別在第一空氣供給管道211及第二空氣供給管道213設置一個所述第一電磁閥261及第二電磁閥263。 The flow control valve assembly 10 according to Example 1 includes a pneumatic regulating unit 260 having a first solenoid valve 261 and a second solenoid valve 263. These solenoid valves 261 and 263 are controlled by electrical signals, utilizing the force of the magnetic field generated by the solenoid to control the flow of fluid. One first solenoid valve 261 and one second solenoid valve 263 are installed in the first air supply conduit 211 and the second air supply conduit 213, respectively.

所述第一電磁閥261的最大供給壓力在0.45至1MPa的範圍內。所述第二電磁閥263的最大供給壓力在相對較低的0.1至小於0.45MPa的範圍內。 The maximum supply pressure of the first solenoid valve 261 is in the range of 0.45 to 1 MPa. The maximum supply pressure of the second solenoid valve 263 is in the relatively lower range of 0.1 to less than 0.45 MPa.

更具體地說,所述第一電磁閥261的最大供給壓力為0.45至0.6MPa,而所述第二電磁閥263的最大供給壓力為0.3至小於0.45MPa。尤其,所述第一電磁閥261的最大供給壓力可以是0.6MPa,而所述第二電磁閥263的最大供給壓力可以是0.3MPa。 More specifically, the maximum supply pressure of the first solenoid valve 261 is 0.45 to 0.6 MPa, while the maximum supply pressure of the second solenoid valve 263 is 0.3 to less than 0.45 MPa. In particular, the maximum supply pressure of the first solenoid valve 261 may be 0.6 MPa, while the maximum supply pressure of the second solenoid valve 263 may be 0.3 MPa.

所述第一電磁閥261呈現出閥的開啟速度變快但關閉有所延遲的特性。所述第二電磁閥263呈現出閥的開啟時間有所延遲但關閉速度變快的特性。 The first solenoid valve 261 exhibits a characteristic of faster opening speed but delayed closing. The second solenoid valve 263 exhibits a characteristic of delayed opening time but faster closing speed.

並且,所述氣動調節單元260、260'還可包含感應感測器267。所述感應感測器267具有確認所述電磁閥261、263的開閉與否的作用。所述感應感測器267在被傳遞流體的供給訊號時,確認所述電磁閥261、263的開啟與否,確認為所述電磁閥261、263關閉時,產生檢測訊號並傳送到控制部300,控制部300再產生用於開啟電磁閥261、263的訊號並傳送到電磁閥261、263。 Furthermore, the pneumatic adjustment units 260, 260' may also include a sensor 267. The sensor 267 is used to confirm whether the solenoid valves 261, 263 are open or closed. When a fluid supply signal is transmitted to the sensor 267, it confirms whether the solenoid valves 261, 263 are open or closed. If the solenoid valves 261, 263 are confirmed to be closed, a detection signal is generated and transmitted to the control unit 300. The control unit 300 then generates a signal for opening the solenoid valves 261, 263 and transmits it to the solenoid valves 261, 263.

參照圖3及圖4,基於實施例2的流量控制用閥組件10'中,所述氣動調節單元260'可包含根據壓力條件來改變空壓的氣動可變閥。 3 and 4 , in the flow control valve assembly 10 ′ according to Embodiment 2, the pneumatic regulating unit 260 ′ may include a pneumatic variable valve that changes the air pressure according to pressure conditions.

所述氣動可變電磁閥265呈現出根據螺線管被施加的電流量來調節被輸出的供給壓力的特性。 The pneumatic variable solenoid valve 265 exhibits the characteristic of adjusting the output supply pressure according to the current applied to the solenoid.

所述氣動可變電磁閥265施加電源以最大供給壓力達到0.45至1MPa的範圍,通過空氣供給管道211供給閥調節空氣。之後,減少電流量以最大供給壓力達到0.1至0.45MPa的範圍,以減少空氣供給管道211的供給面積的狀態開啟。所述氣動可變電磁閥265可設置在一個空氣供給管道211上。 The pneumatically variable solenoid valve 265 is powered to a maximum supply pressure of 0.45 to 1 MPa, regulating air flow through the air supply pipe 211 supply valve. The power is then reduced to a maximum supply pressure of 0.1 to 0.45 MPa, opening the valve while reducing the supply area of the air supply pipe 211. The pneumatically variable solenoid valve 265 can be installed on one air supply pipe 211.

更具體地說,所述氣動可變電磁閥265的最大供給壓力可以是0.45至0.6MPa,可將供給壓力變為0.1至小於0.45MPa。尤其,可改變為所述氣動可變電磁閥265的最大供給壓力為0.6MPa,最小供給壓力為0.3MPa。 More specifically, the pneumatic variable solenoid valve 265 can have a maximum supply pressure of 0.45 to 0.6 MPa, and the supply pressure can be adjusted to 0.1 to less than 0.45 MPa. In particular, the pneumatic variable solenoid valve 265 can have a maximum supply pressure of 0.6 MPa and a minimum supply pressure of 0.3 MPa.

所述控制部300可透過控制閥部200的驅動來調節氣體的流動。 The control unit 300 can regulate the flow of gas by driving the control valve 200.

具體地說,所述控制部300向流量控制用閥組件10、10'傳送預設流量值,根據預設流量值控制氣動調節單元260、260的驅動,從而控制被供給到製程腔室20的製程氣體的流量。 Specifically, the control unit 300 transmits a preset flow rate value to the flow control valve assembly 10, 10' and controls the actuation of the pneumatic regulating units 260, 260 according to the preset flow rate value, thereby controlling the flow rate of the process gas supplied to the process chamber 20.

所述控制部300在當被傳送流體的供給訊號及流量資訊時,向電磁閥261、263、265施加電源,從而以開啟時間較短的第一供給壓力供給閥調節空氣。並且,完成膜閥250的開啟之後,改變供給壓力而以第二供給壓力供給閥調節空氣。 When receiving a fluid supply signal and flow rate information, the control unit 300 applies power to the solenoid valves 261, 263, and 265, causing them to regulate air at a first supply pressure with a shorter opening time. Furthermore, after the diaphragm valve 250 is opened, the supply pressure is changed to a second supply pressure, allowing the valves to regulate air.

作為一例,所述控制部300在當被傳送流體的供給訊號及流量資訊時,向第一電磁閥261供給電源,開啟第一空氣供給管道211,以第一供給壓力供給閥調節空氣。此時,所述控制部300利用感測器確認第一電磁閥261的開放狀態。 For example, when receiving a fluid supply signal and flow rate information, the control unit 300 supplies power to the first solenoid valve 261, opening the first air supply pipe 211 and regulating air with the first supply pressure valve. At this point, the control unit 300 uses a sensor to confirm the open state of the first solenoid valve 261.

其次,所述控制部300在確認到第一電磁閥261的開啟時,向第二電磁閥263施加電源來開啟關閉時間較短的第二空氣供給管道213,之後,中斷第一電磁閥261的電源供給。據此,所述控制部300通過第二空氣供給管道213供給閥調節空氣。 Next, upon confirming that the first solenoid valve 261 is open, the control unit 300 applies power to the second solenoid valve 263, opening the second air supply pipe 213, which has a shorter closing time. The control unit 300 then cuts off power to the first solenoid valve 261. In this way, the control unit 300 regulates air flow through the supply valve in the second air supply pipe 213.

之後,所述控制部300在流體的供給結束之後,阻斷施加到所述第二電磁閥263的電源,阻斷通過第二空氣供給管道213供給的閥調節空氣。 After the fluid supply is completed, the control unit 300 cuts off the power applied to the second solenoid valve 263, thereby blocking the valve-regulated air supplied through the second air supply pipe 213.

亦即,所述控制部300在初期施加空壓時,利用有利於開啟的第一電磁閥261供給閥調節空氣,空壓解除後,利用有理數關閉的第二電磁閥263短時間內阻斷閥調節空氣的供給,將通常需要消耗10ms/delta的流量控制用閥組件的打開及關閉大大縮短到2ms/delta。 Specifically, when air pressure is initially applied, the control unit 300 utilizes the first solenoid valve 261, which is prone to opening, to supply air to the valve. Once the air pressure is released, the second solenoid valve 263, which is prone to closing, briefly blocks the supply of air to the valve. This significantly reduces the opening and closing time of the flow control valve assembly, which typically takes 10 ms/delta, to 2 ms/delta.

並且,所述控制部300在被傳送流體的供給訊號時,施加高電流電源,使得氣動可變電磁閥265以最大供給壓力啟動,從而縮短開啟時間。據此,開啟空氣供給管道211。此時,所述控制部300利用感測器確認氣動可變電磁閥265的開放狀態。 Furthermore, when a fluid supply signal is transmitted to the control unit 300, a high current power source is applied, causing the pneumatic variable solenoid valve 265 to activate at maximum supply pressure, thereby shortening the opening time. This opens the air supply pipe 211. At this time, the control unit 300 uses a sensor to confirm the open state of the pneumatic variable solenoid valve 265.

其次,所述控制部300在確認到氣動可變電磁閥265的開啟時,施加相對較低電流的電源,以減少空氣供給管道211的開啟面積,從而降低供給壓力來啟動。 Next, when the control unit 300 detects the opening of the pneumatic variable solenoid valve 265, it applies a relatively low current power source to reduce the open area of the air supply duct 211, thereby lowering the supply pressure and activating the system.

並且,所述控制部300在流體的供給結束的時點,阻斷對氣動可變電磁閥265施加的電源,從而阻斷基於空氣供給管道211的閥調節空氣的供給。 Furthermore, when the fluid supply ends, the control unit 300 cuts off the power supply to the pneumatic variable solenoid valve 265, thereby cutting off the valve-regulated air supply through the air supply pipe 211.

亦即,所述控制部300在初期施加空壓時,為了縮短開啟時間,施加高電流電源而以最大供給壓力啟動地開啟空氣供給管道211。之後,解除空壓時,為了達到有利於關閉的條件,施加相對較低電流的電源,減少空氣供給管道211的開啟面積。據此,將通常需要消耗10ms/delta的流量控制用閥組件的打開及關閉大大縮短到2ms/delta。 Specifically, when air pressure is initially applied, the control unit 300 applies a high-current power source to open the air supply duct 211 at maximum supply pressure to shorten the opening time. Subsequently, when the air pressure is released, a relatively low-current power source is applied to achieve conditions conducive to closing, thereby reducing the open area of the air supply duct 211. This significantly reduces the opening and closing time of the flow control valve assembly, which typically takes 10 ms/delta, to 2 ms/delta.

如上所述之基於實施例的流量控制用閥組件在初期施加空壓時,在有利於開啟的供給壓力條件下開啟閥,然後改變供給壓力而以有利於關閉的供給壓力條件開啟閥,之後阻斷氣體供給,從而可以實現高速開閉控制。據此,可以精密地控制製程氣體的流量,大幅改善基板處理裝置的製程穩定性。 The flow control valve assembly according to the embodiment described above opens the valve at a supply pressure favorable for opening when air pressure is initially applied. It then changes the supply pressure to open the valve at a pressure favorable for closing, and then shuts off the gas supply, achieving high-speed opening and closing control. This allows precise control of the process gas flow rate, significantly improving process stability in substrate processing equipment.

尤其,基於實施例的流量控制用閥組件在用於執行原子層沉積法(atomic layer deposition,ALD)的基板處理裝置中具有控制氣體供給的用途。 In particular, the flow control valve assembly according to the embodiment is used to control the gas supply in a substrate processing apparatus for performing atomic layer deposition (ALD).

另外,圖6是顯示基於實施例的流量控制方法的製程圖。 In addition, FIG6 is a process diagram showing a flow control method according to an embodiment.

參照圖6,基於實施例的流量控制方法包括如下步驟:向製程腔室20供給氣體的步驟(S100);保持氣體的供給的步驟(S200);及阻斷氣體的流動的步驟(S300)。基於實施例的流量控制方法可利用基於所述實施例1及實施例2的流量控制用閥組件10、10'中的其中一個來執行。 Referring to FIG. 6 , the flow control method according to the embodiment includes the following steps: supplying gas to process chamber 20 ( S100 ); maintaining the gas supply ( S200 ); and blocking the flow of gas ( S300 ). The flow control method according to the embodiment can be implemented using either the flow control valve assembly 10 or 10 ′ according to Embodiment 1 or Embodiment 2.

向所述製程腔室20供給氣體的步驟S100中,控制部300接收氣體供給訊號和流量資訊,產生電源施加訊號而傳送到電磁閥261、265。據此,開啟所述電磁閥261、265而以第一供給壓力供給閥調節空氣。然後,所述加壓桿220被上升驅動而開啟所述膜閥250。並且,允許氣體通過氣體進出部100流動,氣體被供給到製程腔室20。 During step S100 of supplying gas to the process chamber 20, the control unit 300 receives a gas supply signal and flow rate information, generates a power supply signal, and transmits it to the solenoid valves 261 and 265. This signal opens the solenoid valves 261 and 265, regulating the air flow at a first supply pressure. The pressurizing rod 220 is then driven upward, opening the diaphragm valve 250. Furthermore, gas is allowed to flow through the gas inlet/outlet 100, and gas is supplied to the process chamber 20.

本步驟中,還可包括確認是否以所述第一供給壓力供給閥調節空氣的步驟。具體地說,利用感應感測器267確認第一電磁閥261或氣動可變電磁 閥265的開放狀態。確認開放狀態而發現第一電磁閥261或氣動可變電磁閥265未開啟時,控制部300可產生電源施加訊號而再次傳送。 This step may also include confirming whether the valve is regulating air at the first supply pressure. Specifically, the open state of the first solenoid valve 261 or the pneumatic variable solenoid valve 265 is confirmed using the induction sensor 267. If the open state is confirmed and the first solenoid valve 261 or the pneumatic variable solenoid valve 265 is not open, the control unit 300 may generate and transmit a power supply signal again.

其次,保持所述氣體供給的步驟S200中,改變供給壓力,以低於所述第一供給壓力的第二供給壓力供給所述閥調節空氣。 Next, in step S200 of maintaining the gas supply, the supply pressure is changed to supply the valve-regulated air at a second supply pressure lower than the first supply pressure.

本步驟中,控制部300產生電源施加訊號並傳送到第二電磁閥263,開啟第二電磁閥263而以第二供給壓力供給閥調節空氣。並且,中斷對第一電磁閥261施加電源。而且,控制流量以保持向製程腔室20供給氣體。 In this step, the control unit 300 generates a power supply signal and transmits it to the second solenoid valve 263, opening the second solenoid valve 263 and regulating the air flow with the second supply pressure valve. Furthermore, the power supply to the first solenoid valve 261 is interrupted. Furthermore, the flow rate is controlled to maintain the gas supply to the process chamber 20.

或者,本步驟中,控制部300產生氣動可變訊號,為了以低於第一供給壓力的第二供給壓力供給閥調節空氣,減少施加電源的電流量。並且,控制流量以保持向製程腔室20供給氣體。 Alternatively, in this step, the controller 300 generates a pneumatic variable signal to reduce the amount of current applied to the power supply in order to adjust the air supply valve to a second supply pressure lower than the first supply pressure. Furthermore, the flow rate is controlled to maintain the gas supply to the process chamber 20.

然後,阻斷所述氣體的流動的步驟S300中,控制部300接收到氣體阻斷訊號後,產生電源阻斷訊號並傳送到電磁閥263、265。基於所述電磁閥263、265中斷閥調節空氣的供給後,加壓桿220通過彈性恢復部件240下降,對膜閥250施壓,阻斷氣體通過流入孔111流入,據此,可以阻斷基於所述氣體進出部100的氣體的流動。 Then, in step S300 of blocking the flow of gas, the control unit 300, upon receiving the gas blocking signal, generates a power blocking signal and transmits it to the solenoid valves 263 and 265. After the solenoid valves 263 and 265 interrupt the supply of regulated air, the pressure rod 220 descends via the elastic return member 240, applying pressure to the diaphragm valve 250, blocking the flow of gas through the inlet hole 111. This effectively blocks the flow of gas through the gas inlet and outlet 100.

基於實施例的流量控制方法為了形成有利於氣體的流動和阻斷的條件而控制電磁閥的驅動,實現氣體流量供給的高速控制。據此,基於實施例的流體流動控制方法可精密地控制製程氣體的流量,通過氣體噴射部40供給到基板S上。因此,可通過基板處理裝置1大大改善製程穩定性。 The flow control method according to this embodiment controls the actuation of the electromagnetic valve to create conditions favorable for gas flow and blockage, achieving high-speed control of gas flow supply. Consequently, the fluid flow control method according to this embodiment can precisely control the flow of process gas supplied to the substrate S via the gas injection unit 40. Consequently, the substrate processing apparatus 1 can significantly improve process stability.

10:閥組件 10: Valve assembly

100:氣體進出部 100: Gas inlet and outlet

110:流入流路 110: Inflow path

111:流入孔 111: Inflow hole

130:流出流路 130:Outflow path

131:流出孔 131: Outflow hole

150:閥隔室 150: Valve compartment

200:閥部 200: Valve department

210:閥主體 210: Valve body

211:第一空氣供給管道(空氣供給管道) 211: First air supply pipe (air supply pipe)

213:第二空氣供給管道(空氣供給管道) 213: Second air supply pipe (air supply pipe)

215:內部流路 215: Internal flow path

220:加壓桿 220: Pressure rod

230:活塞 230: Piston

240:彈性恢復部件 240: Elastic recovery component

250:膜閥 250: Diaphragm Valve

260:氣動調節單元 260: Pneumatic adjustment unit

261:第一電磁閥(電磁閥) 261: First solenoid valve (solenoid valve)

263:第二電磁閥(電磁閥) 263: Second solenoid valve (solenoid valve)

267:感應感測器 267: Sensor

300:控制部 300: Control Department

Claims (13)

一種流量控制用閥組件,包括: 一氣體進出部,包含流入基板處理氣體的一流入流路、連接到執行基板處理的一製程腔室而供給所述氣體的一流出流路、及連接所述流入流路及所述流出流路的一閥隔室; 一閥部,包含: 一膜閥,設置在所述流入流路的上部; 一加壓桿,對所述膜閥施壓而調節所述流入流路的開口率和所述氣體的流量;以及 一氣動調節單元,控制用於所述加壓桿的升降驅動的一閥調節空氣的供給,從而調節通過所述閥隔室的所述氣體的流量;以及 一控制部,控制所述閥部的操作, 其中,所述控制部控制所述氣動調節單元的驅動,以一第一供給壓力供給所述閥調節空氣而開啟所述膜閥之後,以低於所述第一供給壓力的一第二供給壓力供給所述閥調節空氣,在所述第二供給壓力下關閉所述膜閥。 A flow control valve assembly comprises: a gas inlet/outlet portion comprising an inlet flow path for a substrate processing gas to flow into the substrate, an outlet flow path connected to a process chamber performing substrate processing and supplying the gas, and a valve compartment connecting the inlet flow path and the outlet flow path; a valve portion comprising: a diaphragm valve disposed above the inlet flow path; a pressure rod for applying pressure to the diaphragm valve to adjust the opening ratio of the inlet flow path and the flow rate of the gas; and a pneumatic regulating unit for controlling the supply of air to a valve for raising and lowering the pressure rod, thereby regulating the flow rate of the gas passing through the valve compartment; and a control portion for controlling the operation of the valve portion. The control unit controls the driving of the pneumatic regulating unit to supply regulating air to the valve at a first supply pressure to open the diaphragm valve, and then supplies regulating air to the valve at a second supply pressure lower than the first supply pressure to close the diaphragm valve at the second supply pressure. 根據請求項1所述的流量控制用閥組件,其中,所述閥部包含: 一閥主體,內部形成一容納空間,一側連接到至少一個空氣供給管道,使得所述閥調節空氣進出;以及 一活塞,劃分所述閥主體的所述容納空間,在劃分的空間中的其中一個,基於所述閥調節空氣的進出而沿著所述閥主體的內壁面升降,從而使所述加壓桿升降。 The flow control valve assembly according to claim 1, wherein the valve portion comprises: a valve body having an internal storage space formed therein and one side of which is connected to at least one air supply pipe, allowing the valve to regulate the flow of air; and a piston that divides the storage space of the valve body and rises and falls along the inner wall of the valve body in one of the divided spaces based on the flow of air regulated by the valve, thereby raising and lowering the pressure rod. 根據請求項2所述的流量控制用閥組件,其中,所述閥部包含: 一彈性恢復部件,設置在所述活塞的一側而提供彈性力,使得所述加壓桿對所述膜閥施壓而關閉所述流入流路。 The flow control valve assembly according to claim 2, wherein the valve portion includes: An elastic return member disposed on one side of the piston to provide an elastic force so that the pressure rod presses the diaphragm valve to close the inflow channel. 根據請求項2所述的流量控制用閥組件,其中,所述閥部包含: 所述閥主體,連接到一第一空氣供給管道及一第二空氣供給管道;以及 所述氣動調節單元,具有分別設置在所述第一空氣供給管道及所述第二空氣供給管道的一第一電磁閥及一第二電磁閥, 其中,所述控制部在開啟所述第一電磁閥並以所述第一供給壓力供給所述閥調節空氣之後,開啟所述第二電磁閥並關閉所述第一電磁閥,以所述第二供給壓力供給所述閥調節空氣,以及 其中,所述第一電磁閥及所述第二電磁閥的最大供給壓力彼此不同。 The flow control valve assembly according to claim 2, wherein the valve portion comprises: the valve body connected to a first air supply pipe and a second air supply pipe; and the pneumatic regulating unit having a first solenoid valve and a second solenoid valve, respectively disposed in the first air supply pipe and the second air supply pipe; wherein, after the control unit opens the first solenoid valve and supplies the valve-regulated air at the first supply pressure, it opens the second solenoid valve and closes the first solenoid valve to supply the valve-regulated air at the second supply pressure; wherein, the maximum supply pressures of the first and second solenoid valves are different. 根據請求項4所述的流量控制用閥組件,其中,所述閥部還包含:一感應感測器,設置在所述第一電磁閥的一側而用於確認所述第一電磁閥的開放狀態。The flow control valve assembly according to claim 4, wherein the valve portion further includes: an induction sensor disposed on one side of the first solenoid valve and used to confirm the open state of the first solenoid valve. 根據請求項4所述的流量控制用閥組件,其中,所述第一電磁閥的最大供給壓力是0.45至1 MPa,而所述第二電磁閥的最大供給壓力是0.1至小於0.45 MPa。The flow control valve assembly according to claim 4, wherein the maximum supply pressure of the first solenoid valve is 0.45 to 1 MPa, and the maximum supply pressure of the second solenoid valve is 0.1 to less than 0.45 MPa. 根據請求項6所述的流量控制用閥組件,其中,所述第一電磁閥的最大供給壓力是0.6 MPa,而所述第二電磁閥最大供給壓力是0.3 MPa。The flow control valve assembly according to claim 6, wherein the maximum supply pressure of the first solenoid valve is 0.6 MPa, and the maximum supply pressure of the second solenoid valve is 0.3 MPa. 根據請求項2所述的流量控制用閥組件,其中,所述閥部包含具有設置在所述空氣供給管道的一氣動可變電磁閥的所述氣動調節單元, 其中,所述控制部在對所述氣動可變電磁閥施加第一電源並以所述第一供給壓力供給所述閥調節空氣之後,向所述氣動可變電磁閥施加電流量低於所述第一電源的第二電源,從而以所述第二供給壓力供給所述閥調節空氣,以及 其中,所述氣動可變電磁閥根據被施加的電源的電流量調節開口率。 The flow control valve assembly according to claim 2, wherein the valve portion includes the pneumatic regulating unit having a pneumatically variable solenoid valve disposed in the air supply conduit; After applying a first power source to the pneumatically variable solenoid valve to supply the valve-regulated air at the first supply pressure, the control portion applies a second power source having a lower current flow rate than the first power source to the pneumatically variable solenoid valve to supply the valve-regulated air at the second supply pressure; The pneumatically variable solenoid valve adjusts its opening rate based on the current flow rate of the applied power source. 根據請求項8所述的流量控制用閥組件,其中,所述第一供給壓力為0.45至1 MPa,而所述第二供給壓力為0.1至小於0.45 MPa。The flow control valve assembly according to claim 8, wherein the first supply pressure is 0.45 to 1 MPa, and the second supply pressure is 0.1 to less than 0.45 MPa. 一種基板處理裝置,包括: 一製程腔室,內部形成用於執行基板處理的一處理空間; 一基板支撐部,設置在所述處理空間內部而安置所述基板; 一氣體噴射部,為了所述基板處理而向所述處理空間噴射氣體; 一氣體供給部,向所述氣體噴射部供給製程氣體;以及 如請求項1至9中任一項所述的流量控制用閥組件,設置在所述氣體供給部與所述氣體噴射部之間而調節氣體的流量。 A substrate processing apparatus comprises: a process chamber forming a processing space for performing substrate processing; a substrate support disposed within the processing space to accommodate the substrate; a gas injection portion to inject gas into the processing space for substrate processing; a gas supply portion to supply process gas to the gas injection portion; and a flow control valve assembly according to any one of claims 1 to 9, disposed between the gas supply portion and the gas injection portion to regulate the flow rate of the gas. 根據請求項10所述的基板處理裝置,其中,所述基板處理裝置用於執行原子層沉積法(atomic layer deposition, ALD)。The substrate processing apparatus according to claim 10, wherein the substrate processing apparatus is used to perform atomic layer deposition (ALD). 一種流量控制方法,應用請求項1至9中任一項所述的流量控制用閥組件,包括如下步驟: 接收一氣體供給訊號並以一第一供給壓力供給一閥調節空氣,開啟一膜閥,允許氣體通過一氣體進出部流動,向一製程腔室供給氣體; 以低於所述第一供給壓力的一第二供給壓力改變所述閥調節空氣的供給,保持所述製程腔室中所述氣體的供給;以及 接收一氣體阻斷訊號而阻斷所述閥調節空氣的供給,阻斷氣體通過所述氣體進出部流動。 A flow control method employing the flow control valve assembly of any one of claims 1 to 9 comprises the following steps: Receiving a gas supply signal and supplying a valve-regulated air at a first supply pressure, thereby opening a diaphragm valve to allow gas to flow through a gas inlet and outlet, thereby supplying gas to a process chamber; Changing the supply of the valve-regulated air at a second supply pressure lower than the first supply pressure to maintain the supply of gas to the process chamber; and Receiving a gas blocking signal and blocking the supply of the valve-regulated air, thereby blocking the flow of gas through the gas inlet and outlet. 根據請求項12所述的流量控制方法,其中,向所述製程腔室供給氣體的步驟還包括如下步驟: 確認是否以所述第一供給壓力供給所述閥調節空氣。 The flow control method of claim 12, wherein the step of supplying gas to the process chamber further comprises the following step: Confirming whether the valve-regulated air is supplied at the first supply pressure.
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