TWI893545B - Electromagnetic wave transmission board and method for fabricating the same - Google Patents
Electromagnetic wave transmission board and method for fabricating the sameInfo
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Abstract
Description
本發明是有關於一種電波傳輸板,特別是指一種設置於電路板中的電波傳輸板。 The present invention relates to a radio wave transmission board, and more particularly to a radio wave transmission board disposed in a circuit board.
傳統的電路板是通過金屬導線(例如銅線)來傳遞電子元件間的電波訊號。然而,在功能多樣化的電子產品(例如手機)發展下,對高速及高頻訊號的傳輸需求也越來越高。一般而言,當傳遞的訊號越高速或者越高頻,通過金屬導線來傳遞時亦會造成越高的訊號損耗,故以金屬導線傳輸電波訊號的方式已不敷於上述電子產品使用。 Traditional circuit boards use metal conductors (such as copper wires) to transmit radio signals between electronic components. However, with the development of increasingly versatile electronic products (such as mobile phones), the demand for high-speed and high-frequency signal transmission is increasing. Generally speaking, the higher the speed or frequency of the signal, the greater the signal loss when transmitted through metal conductors. Therefore, using metal conductors to transmit radio signals is no longer sufficient for these electronic products.
因此,本發明提供了一種電波傳輸板以及其製造方法,以降低訊號傳輸的損耗率。 Therefore, the present invention provides a radio wave transmission board and its manufacturing method to reduce the loss rate of signal transmission.
本發明提供一種電波傳輸板,此電波傳輸板包含一介電波導結構以及兩個基板整合波導結構。介電波導結構包含一第一介電材料以及兩個第二介電材料。第一介電材 料具有兩凹槽,且凹槽分別位於第一介電材料的相對兩表面,而兩凹槽之間存有第一介電材料的一部分。第二介電材料分別設置於凹槽內,且第一介電材料的介電常數小於第二介電材料的介電常數。介電波導結構設置於基板整合波導結構之間,且其中一個基板整合波導結構通過第一介電材料的一部分以及第二介電材料而連接至另一個基板整合波導結構。 The present invention provides a radio wave transmission board comprising a dielectric waveguide structure and two substrate-integrated waveguide structures. The dielectric waveguide structure comprises a first dielectric material and two second dielectric materials. The first dielectric material has two grooves, one located on opposite surfaces of the first dielectric material, with a portion of the first dielectric material located between the two grooves. The second dielectric material is disposed within each groove, and the dielectric constant of the first dielectric material is smaller than that of the second dielectric material. The dielectric waveguide structure is disposed between the substrate-integrated waveguide structures, with one substrate-integrated waveguide structure connected to the other substrate-integrated waveguide structure via a portion of the first dielectric material and the second dielectric material.
在本發明的至少一實施例中,其中第一介電材料的介電常數範圍落在3.0至3.4之間,且第二介電材料的介電常數範圍落在10.0至20.0之間。 In at least one embodiment of the present invention, the dielectric constant of the first dielectric material ranges from 3.0 to 3.4, and the dielectric constant of the second dielectric material ranges from 10.0 to 20.0.
在本發明的至少一實施例中,其中介電波導結構從其中一個基板整合波導結構沿著一長軸方向而延伸至基板整合波導結構的另一者,其中第一介電材料的一部分以及第二介電材料沿著長軸方向而延伸。 In at least one embodiment of the present invention, the dielectric waveguide structure extends from one substrate-integrated waveguide structure to another substrate-integrated waveguide structure along a longitudinal axis, wherein a portion of the first dielectric material and the second dielectric material extend along the longitudinal axis.
在本發明的至少一實施例中,其中每一個基板整合波導結構包含一介電層、位於介電層的相對兩側的兩層金屬層以及多個設置於介電層中的導電通孔。其中一層金屬層通過導電通孔連接至另一層金屬層,且導電通孔電性連接金屬層。 In at least one embodiment of the present invention, each substrate-integrated waveguide structure includes a dielectric layer, two metal layers located on opposite sides of the dielectric layer, and a plurality of conductive vias disposed in the dielectric layer. One metal layer is connected to the other metal layer via the conductive vias, and the conductive vias are electrically connected to the metal layers.
在本發明的至少一實施例中,其中基板整合波導結構通過介電層連接至介電波導結構。 In at least one embodiment of the present invention, the substrate-integrated waveguide structure is connected to the dielectric waveguide structure via a dielectric layer.
在本發明的至少一實施例中,其中介電層的材料與第一介電材料相同。 In at least one embodiment of the present invention, the material of the dielectric layer is the same as the first dielectric material.
本發明還提供了一種電波傳輸板的製造方法,此方 法包含提供一內埋結構,此內埋結構包含一第一介電材料以及兩個第二介電材料。第二介電材料分別位於第一介電材料的相對兩側,且第一介電材料的介電常數小於第二介電材料的介電常數;提供一基板,此基板包含一介電層以及分別位於介電層的相對兩側的兩層金屬層;移除基板的一部分,以形成連通基板的相對兩表面的一開口;在開口內設置內埋結構,其中基板的介電層連接於內埋結構的第一介電材料以及第二介電材料,且基板的表面分別暴露內埋結構的第二介電材料;以及在開口內設置內埋結構之後,在基板中形成多個導電通孔,其中金屬層通過導電通孔而互相電性連接,且導電通孔分布於內埋結構的相對兩端。 The present invention also provides a method for manufacturing a radio wave transmission plate. The method includes providing an embedded structure comprising a first dielectric material and two second dielectric materials. A second dielectric material is disposed on opposite sides of a first dielectric material, and the dielectric constant of the first dielectric material is smaller than that of the second dielectric material. A substrate is provided, comprising a dielectric layer and two metal layers disposed on opposite sides of the dielectric layer. A portion of the substrate is removed to form an opening connecting two opposite surfaces of the substrate. A buried structure is disposed within the opening, wherein the dielectric layer of the substrate is connected to the first and second dielectric materials of the buried structure, and the second dielectric material of the buried structure is exposed on the surface of the substrate. After the buried structure is disposed within the opening, a plurality of conductive vias are formed in the substrate, wherein the metal layers are electrically connected to each other through the conductive vias, and the conductive vias are distributed at opposite ends of the buried structure.
在本發明的至少一實施例中,提供內埋結構包含提供一介電基板;提供兩個複合基板,且每一個第二介電材料包含一金屬箔片;在介電基板的相對兩側,分別貼合複合基板,並且使金屬箔片互相背對而設置;以及在貼合複合基板之後,沿著介電基板的法線切割介電基板以及複合基板,以形成內埋結構。 In at least one embodiment of the present invention, providing a buried structure includes providing a dielectric substrate; providing two composite substrates, each of which includes a second dielectric material comprising a metal foil; laminating the composite substrates to opposite sides of the dielectric substrate, with the metal foils facing each other; and after laminating the composite substrates, cutting the dielectric substrate and the composite substrate along a normal to the dielectric substrate to form the buried structure.
在本發明的至少一實施例中,還包含在形成導電通孔之後,移除內埋結構的金屬箔片,以暴露內埋結構的第二介電材料。 In at least one embodiment of the present invention, the method further includes removing the metal foil of the buried structure after forming the conductive via to expose the second dielectric material of the buried structure.
在本發明的至少一實施例中,其中在開口內設置內埋結構包含在基板的其中一表面上貼合膠帶,且膠帶覆蓋開口;在膠帶上設置內埋結構,以使內埋結構穿過開口;以及在膠帶上設置內埋結構之後,接合基板以及內埋結 構。 In at least one embodiment of the present invention, disposing the embedded structure within the opening includes applying tape to one surface of the substrate, with the tape covering the opening; disposing the embedded structure on the tape so that the embedded structure passes through the opening; and, after disposing the embedded structure on the tape, bonding the substrate and the embedded structure.
基於上述,本發明利用第一介電材料以及第二介電材料之間介電常數的差異,來提供電波訊號傳輸路徑。第一介電材料的一部分夾設於第二介電材料之間,且由於第一介電材料的介電常數小於第二介電材料,故電波訊號傾向於通過位於兩個第二介電材料之間的部分第一介電材料而傳遞。此種電波傳遞方式可以避免電波訊號因為經過導線而損耗,有助於降低電波傳遞的損耗率。 Based on the above, the present invention utilizes the difference in dielectric constant between a first dielectric material and a second dielectric material to provide a radio signal transmission path. A portion of the first dielectric material is sandwiched between the second dielectric materials. Because the dielectric constant of the first dielectric material is smaller than that of the second dielectric material, radio signals tend to be transmitted through the portion of the first dielectric material located between the two second dielectric materials. This radio signal transmission method prevents radio signal loss due to passing through the wires, helping to reduce the loss rate of radio signal transmission.
100:電波傳輸板 100: Radio wave transmission board
120:介電波導結構 120: Dielectric waveguide structure
122,122’:第一介電材料 122,122’: First dielectric material
122t:凹槽 122t: Groove
305f,305s:表面 305f, 305s: Surface
124a,124b:第二介電材料 124a, 124b: Second dielectric material
140:基板整合波導結構 140: Substrate-integrated waveguide structure
142,305i:介電層 142,305i: Dielectric layer
144,305m:金屬層 144,305m: Metal layer
146:導電通孔 146:Conductive via
202:介電基板 202: Dielectric substrate
204a,204b:複合基板 204a, 204b: Composite substrate
204c:金屬箔片 204c: Metal foil
204g:樹脂基板 204g:Resin substrate
210:內埋結構 210: Embedded structure
301,302:接合膠片 301,302: Bonding film
305:基板 305:Substrate
305t:開口 305t: Opening
307:膠帶 307: Tape
A-A,B-B:線段 A-A, B-B: Line segment
D1:長軸方向 D1: Long axis direction
N1:法線 N1: normal line
w:寬度 w: width
從以下詳細敘述並搭配圖式檢閱,可理解本發明的態樣。應注意,多種特徵並未以產業上實務標準的比例繪製。事實上,為了討論上的清楚易懂,各種特徵的尺寸可以任意地增加或減少。 The present invention will be understood from the following detailed description when reviewed in conjunction with the accompanying drawings. It should be noted that many features are not drawn to scale as is standard practice in the industry. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.
圖1A繪示本發明至少一實施例的電波傳輸板的上視圖。 Figure 1A shows a top view of a radio wave transmission plate according to at least one embodiment of the present invention.
圖1B繪示沿著圖1A的線段A-A的電波傳輸板的剖視圖。 Figure 1B shows a cross-sectional view of the radio wave transmission plate along line segment A-A in Figure 1A.
圖2A至圖2B繪示本發明至少一實施例的電波傳輸板製造方法的剖面圖。 Figures 2A and 2B illustrate cross-sectional views of a method for manufacturing a radio wave transmission plate according to at least one embodiment of the present invention.
圖3A至圖3B繪示本發明至少一實施例沿著圖1A的線段A-A的電波傳輸板製造方法的剖視圖。 Figures 3A and 3B illustrate cross-sectional views of a method for manufacturing a radio wave transmission plate along line A-A in Figure 1A according to at least one embodiment of the present invention.
圖3C至圖3D繪示本發明至少一實施例沿著圖1A的線段B-B的電波傳輸板製造方法的剖視圖。 Figures 3C and 3D illustrate cross-sectional views of a method for manufacturing a radio wave transmission plate along line B-B in Figure 1A according to at least one embodiment of the present invention.
本發明將以下列實施例進行詳細說明。須注意的是,以下本發明實施例的敘述在此僅用於舉例說明,並非旨在詳盡無遺地揭示所有實施態樣或是限制本發明的具體實施態樣。舉例而言,敘述中之「第一特徵形成於第二特徵上」包含多種實施方式,其中涵蓋第一特徵與第二特徵直接接觸,亦涵蓋額外的特徵形成於第一特徵與第二特徵之間而使兩者不直接接觸。此外,圖式及說明書中所採用的相同元件符號會盡可能表示相同或相似的元件。 The present invention will be described in detail using the following embodiments. It should be noted that the following descriptions of the embodiments of the present invention are for illustrative purposes only and are not intended to be exhaustive or to limit the present invention to specific embodiments. For example, the phrase "a first feature formed on a second feature" encompasses various implementations, including both direct contact between the first and second features and additional features formed between the first and second features without direct contact. Furthermore, identical reference numbers will be used throughout the drawings and description to represent identical or similar components whenever possible.
空間相對的詞彙,例如「下層的」、「低於」、「下方」、「高於」、「上方」等相關詞彙,於此用以簡單描述如圖所示之元件或特徵與另一元件或特徵的關係。這些空間相對的詞彙除了圖中所描繪的轉向之外,也涵蓋在使用或操作裝置時的不同的轉向。此外,當元件可旋轉(旋轉90度或其他角度)時,在此使用之空間相對的描述語也可作對應的解讀。 Spatially relative terms, such as "inferior," "lower than," "beneath," "above," and related terms, are used herein to simply describe the relationship of one component or feature to another component or feature as shown in the diagram. These spatially relative terms encompass not only the orientation depicted in the diagram but also various orientations during use or operation of the device. Furthermore, when a component is rotatable (90 degrees or other angles), the spatially relative descriptors used herein should be interpreted accordingly.
更甚者,當以「大約」、「約」等描述一數字或一數字範圍時,該詞彙旨在涵蓋合理範圍內之數字,且須考量到本領域的基本技術人員在製造過程中,所能理解之自然差異。數字範圍涵蓋包含所描述之數字的合理範圍,舉例而言,在所描述之數字的+/-10%內,是基於已知之製造公差,該公差數字與該製造特徵具備之特性有關。例如,具有「大約5奈米」厚度的材料層可以涵蓋從4.25奈米 至5.75奈米之尺寸範圍,其中關於沉積該材料層的製造公差+/-15%,皆為本領域的基本技術人員所知。進一步而言,本發明可能會在各種示例中重複標號以及/或標示。此重複是為了簡化並清楚說明,而非意圖表明該處所討論的各種實施方式以及/或配置之間的關係。 Furthermore, when using terms like "approximately" or "about" to describe a number or a range of numbers, such terms are intended to encompass numbers within a reasonable range, taking into account the natural variations in manufacturing processes that are understood by those skilled in the art. Numerical ranges encompass a reasonable range encompassing the described number. For example, within +/- 10% of the described number is based on known manufacturing tolerances associated with the characteristics of the manufacturing feature. For example, a material layer having a thickness of "approximately 5 nanometers" may encompass dimensions ranging from 4.25 nanometers to 5.75 nanometers, where the manufacturing tolerances for depositing the material layer are within +/- 15%, as is known to those skilled in the art. Furthermore, this disclosure may repeat numbers and/or designations throughout the various examples. This repetition is for simplicity and clarity and is not intended to indicate a relationship between the various implementations and/or configurations discussed here.
本發明提供一種電波傳輸板100。請參閱圖1A,電波傳輸板100包含介電波導結構120以及兩個基板整合波導結構140。請參閱圖1B,介電波導結構120包含第一介電材料122以及兩個第二介電材料124a與124b,其中第一介電材料122具有兩凹槽122t,且這兩個凹槽122t分別位於第一介電材料122的相對兩表面(未標示)。 The present invention provides a radio wave transmission plate 100. Referring to FIG. 1A , the radio wave transmission plate 100 includes a dielectric waveguide structure 120 and two substrate-integrated waveguide structures 140. Referring to FIG. 1B , the dielectric waveguide structure 120 includes a first dielectric material 122 and two second dielectric materials 124a and 124b . The first dielectric material 122 has two grooves 122t , and these two grooves 122t are located on opposite surfaces (not shown) of the first dielectric material 122 .
如圖1B所示,第二介電材料124a與124b分別設置於凹槽122t內,其中凹槽122t之間存有第一介電材料122的一部分(未標示)。詳細來說,兩個互相背對的凹槽122t之間完全分隔,故兩個凹槽122t的底面之間會存有部分第一介電材料122,以使這兩個凹槽122t不會彼此連通。由圖1B的剖視圖來看,此區域的介電波導結構120呈三明治結構,其中第一介電材料122夾設於兩個第二介電材料124a與124b之間,且第一介電材料122直接接觸第二介電材料124a與124b。 As shown in Figure 1B , second dielectric materials 124a and 124b are disposed within grooves 122t, respectively. A portion of the first dielectric material 122 (not labeled) resides between the grooves 122t. Specifically, the two opposing grooves 122t are completely separated, so a portion of the first dielectric material 122 resides between the bottom surfaces of the two grooves 122t, preventing the two grooves 122t from connecting. The cross-sectional view of Figure 1B shows that the dielectric waveguide structure 120 in this region forms a sandwich structure, with the first dielectric material 122 sandwiched between the two second dielectric materials 124a and 124b, and directly contacting both second dielectric materials 124a and 124b.
特別一提的是,第一介電材料122的介電常數小於第二介電材料124a與124b的介電常數。舉例而言,第一介電材料122的介電常數範圍可落在3.0至3.4之間, 且可以包含例如烴基聚合物(Hydrocarbon-based polymers)、聚氧二甲苯(Polyphenylene oxide;PPO)、聚苯醚(Polyphenylene ether;PPE)或類似的材料。另一方面,第二介電材料124a與124b的介電常數範圍可落在10.0至20.0之間,且可以包含具有高介電常數的玻璃強化樹脂(Resin system reinforced with-glass)或類似的材料。然而,本發明的第一介電材料122、第二介電材料124a與124b的介電常數不限於上述範圍。 In particular, the dielectric constant of the first dielectric material 122 is smaller than that of the second dielectric materials 124a and 124b. For example, the dielectric constant of the first dielectric material 122 may range from 3.0 to 3.4, and may include, for example, hydrocarbon-based polymers, polyphenylene oxide (PPO), polyphenylene ether (PPE), or similar materials. On the other hand, the dielectric constant of the second dielectric materials 124a and 124b may range from 10.0 to 20.0, and may include a glass-reinforced resin (RSR) with a high dielectric constant, or similar materials. However, the dielectric constants of the first dielectric material 122 and the second dielectric materials 124a and 124b of the present invention are not limited to the aforementioned ranges.
介電波導結構120設置於兩個基板整合波導結構140之間,且介電波導結構120從其中一個基板整合波導結構140沿著一長軸方向D1而延伸至另一個基板整合波導結構140。值得一提的是,介電波導結構120中的第一介電材料122、第二介電材料124a與124b亦沿著長軸方向D1而延伸,且其中一個基板整合波導結構140通過第一介電材料122的一部分、第二介電材料124a與124b而連接至另一個基板整合波導結構140。換言之,在本實施例中,第一介電材料122的一部分、第二介電材料124a與124b沿著相同的方向而延伸,使兩個基板整合波導結構140在此方向上互相連接。 The dielectric waveguide structure 120 is disposed between two substrate-integrated waveguide structures 140, extending from one substrate-integrated waveguide structure 140 to the other substrate-integrated waveguide structure 140 along a longitudinal direction D1. It is worth noting that the first dielectric material 122 and the second dielectric materials 124a and 124b in the dielectric waveguide structure 120 also extend along the longitudinal direction D1, and one substrate-integrated waveguide structure 140 is connected to the other substrate-integrated waveguide structure 140 via a portion of the first dielectric material 122 and the second dielectric materials 124a and 124b. In other words, in this embodiment, a portion of the first dielectric material 122 and the second dielectric materials 124a and 124b extend in the same direction, interconnecting the two substrate-integrated waveguide structures 140 in this direction.
由於第一介電材料122的介電常數以及第二介電材料124a與124b的介電常數之間具有差異值,且第一介電材料122的介電常數小於第二介電材料124a與124b的介電常數。因此,當電波訊號通過介電波導結構 120而沿著長軸方向D1傳遞時,電波訊號會集中在第二介電材料124a與124b之間的部分第一介電材料122中。 Because the dielectric constant of the first dielectric material 122 differs from the dielectric constants of the second dielectric materials 124a and 124b, and the dielectric constant of the first dielectric material 122 is smaller than the dielectric constants of the second dielectric materials 124a and 124b, when an electromagnetic signal is transmitted along the longitudinal axis D1 through the dielectric waveguide structure 120, the electromagnetic signal is concentrated in the portion of the first dielectric material 122 between the second dielectric materials 124a and 124b.
換句話來說,由於位於第二介電材料124a與124b之間的第一介電材料122的介電常數較低(相較於其周圍的第二介電材料124a與124b而言),電波訊號傾向於通過第一介電材料122,故此部分的第一介電材料122可以做為電波訊號由其中一個基板整合波導結構140傳遞至另一個基板整合波導結構140的主要通道。 In other words, because the first dielectric material 122 located between the second dielectric materials 124a and 124b has a lower dielectric constant (compared to the surrounding second dielectric materials 124a and 124b), radio signals tend to pass through the first dielectric material 122. Therefore, this portion of the first dielectric material 122 can serve as the primary channel for radio signals to be transmitted from one substrate-integrated waveguide structure 140 to the other substrate-integrated waveguide structure 140.
另一方面,雖然大部分在基板整合波導結構140之間傳遞的電波訊號是通過第一介電材料122來傳遞,但仍有少部分的電波訊號可以通過第二介電材料124a與124b來傳遞。值得一提的是,當第一介電材料122的介電常數以及第二介電材料124a與124b的介電常數之間的差異值越大,通過第一介電材料122傳遞的電波訊號比例則越高。亦即電波訊號傳遞越集中於第二介電材料124a與124b之間的第一介電材料122,遂減少電波訊號在傳遞的過程中的耗損。 On the other hand, while the majority of the radio wave signals transmitted within the substrate-integrated waveguide structure 140 pass through the first dielectric material 122, a small portion of the radio wave signals can still be transmitted through the second dielectric materials 124a and 124b. It is worth noting that the greater the difference between the dielectric constant of the first dielectric material 122 and the dielectric constants of the second dielectric materials 124a and 124b, the higher the proportion of the radio wave signals transmitted through the first dielectric material 122. In other words, the radio wave signal transmission is more concentrated in the first dielectric material 122 between the second dielectric materials 124a and 124b, thereby reducing radio wave signal loss during the transmission process.
基板整合波導結構140包含介電層142、兩層金屬層144以及多個導電通孔146。兩個金屬層144分別位於介電層142的相對兩側,且導電通孔146設置於介電層142中。由於導電通孔146位在沿著圖1A的線段B-B所截的面上,故在圖1B中僅以虛線表示。如圖1B所示,其中一層金屬層144通過導電通孔146連接至另一層金屬層 144,且導電通孔146電性連接兩層金屬層144。金屬層144以及導電通孔146的材料可以包含銅。雖然本實施例的各基板整合波導結構140各包含六個導電通孔146,且導電通孔146兩兩成對而排列,但導電通孔146的分布以及數量不限於此。 Substrate-integrated waveguide structure 140 includes a dielectric layer 142, two metal layers 144, and a plurality of conductive vias 146. The two metal layers 144 are located on opposite sides of dielectric layer 142, and conductive vias 146 are disposed within dielectric layer 142. Because conductive vias 146 are located along the plane taken along line B-B in Figure 1A , they are represented by dashed lines in Figure 1B . As shown in Figure 1B , one metal layer 144 is connected to the other metal layer 144 via conductive vias 146, and conductive vias 146 electrically connect both metal layers 144. The metal layers 144 and conductive vias 146 can be made of copper. Although each substrate-integrated waveguide structure 140 of this embodiment includes six conductive vias 146, and the conductive vias 146 are arranged in pairs, the distribution and number of the conductive vias 146 are not limited thereto.
特別一提的是,在本實施例中,基板整合波導結構140(Substrate Integrated Waveguide;SIW)可以是用於微波天線的矩形波導元件,以達到將電波訊號饋入(feeding)介電波導結構120的功效。進一步來說,當電波傳輸板100設置於一電路板中(未繪示),可以通過其中一個基板整合波導結構140將接收到的電波訊號導入介電波導結構120,並且通過介電波導結構120傳遞至另一個基板整合波導結構140。 It is worth noting that in this embodiment, the substrate integrated waveguide (SIW) structure 140 can be a rectangular waveguide element used in microwave antennas, thereby feeding radio wave signals into the dielectric waveguide structure 120. Furthermore, when the radio wave transmission board 100 is mounted on a circuit board (not shown), the received radio wave signal can be introduced into the dielectric waveguide structure 120 via one of the SIW structures 140 and then transmitted to the other SIW structure 140 via the dielectric waveguide structure 120.
基板整合波導結構140是通過介電層142連接至介電波導結構120。詳細來說,基板整合波導結構140的介電層142直接連接介電波導結構120的相對兩端。在本實施例中,介電層142的材料與第一介電材料122相同,亦即介電層142的介電常數範圍可落在3.0至3.4之間,並且可以包含例如烴基聚合物、聚氧二甲苯、聚苯醚或類似的介電接合材料。 The substrate-integrated waveguide structure 140 is connected to the dielectric waveguide structure 120 via a dielectric layer 142. Specifically, the dielectric layer 142 of the substrate-integrated waveguide structure 140 is directly connected to opposite ends of the dielectric waveguide structure 120. In this embodiment, the dielectric layer 142 is made of the same material as the first dielectric material 122, i.e., the dielectric constant of the dielectric layer 142 may range from 3.0 to 3.4, and may include, for example, an alkyl polymer, polyoxyethylene, polyphenylene oxide, or a similar dielectric bonding material.
本發明提供一種電波傳輸板的製造方法,以電波傳輸板100為例,此製造方法可以包含如圖2A至圖2B以及圖3A至圖3D所示的數個步驟。首先,提供內埋結構210(標示於圖2B),內埋結構210的形成步驟請參考 圖2A至圖2B。如圖2A所示,提供介電基板202,並且提供兩個複合基板204a與204b。接著,可以透過熱壓貼合的方式,在介電基板202的相對兩側分別貼合複合基板204a與204b。介電基板202的材料可以包含例如碳氫基的樹脂基板,且其介電常數範圍可以落在3.0至3.4之間。 The present invention provides a method for manufacturing a radio wave transmission plate. Taking radio wave transmission plate 100 as an example, this manufacturing method may include several steps as shown in Figures 2A-2B and 3A-3D. First, an embedded structure 210 (shown in Figure 2B) is provided. The steps for forming embedded structure 210 are described in detail in Figures 2A-2B. As shown in Figure 2A, a dielectric substrate 202 and two composite substrates 204a and 204b are provided. Composite substrates 204a and 204b are then laminated to opposite sides of dielectric substrate 202 using heat-pressing. The dielectric substrate 202 may be made of, for example, a hydrocarbon-based resin substrate, and its dielectric constant may range from 3.0 to 3.4.
特別一提的是,複合基板204a(以及複合基板204b)的厚度範圍可以落在0.13mm至0.5mm之間,例如0.5mm,並且可各自包含雙層金屬箔片204c的與樹脂基板204g,其中複合基板204a與204b可以是銅箔基板(Copper Clad Laminate;CCL),所以金屬箔片204c可為銅箔。詳細來說,兩層金屬箔片204c分別位於樹脂基板204g的相對兩側。 In particular, the thickness of composite substrate 204a (and composite substrate 204b) can range from 0.13 mm to 0.5 mm, for example, 0.5 mm, and each can include a double-layer metal foil 204c and a resin substrate 204g. Composite substrates 204a and 204b can be copper clad laminates (CCLs), so metal foil 204c can be copper foil. Specifically, the two layers of metal foil 204c are located on opposite sides of the resin substrate 204g.
在本實施例中,可以透過蝕刻或研磨的方式,將其中一層金屬箔片204c移除,以形成圖2A中僅包含一層金屬箔片204c的複合基板204a。其中複合基板204a與204b的樹脂基板204g是互相面對而貼合於介電基板202上,亦即複合基板204a的金屬箔片204c與複合基板204b的金屬箔片204c互相背對而設置。在部分實施例中,樹脂基板204g可以包含玻璃纖維等材料,且樹脂基板204g的介電常數範圍可以落在10.0至20.0之間。 In this embodiment, one layer of metal foil 204c can be removed by etching or polishing to form the composite substrate 204a shown in FIG2A , which includes only the metal foil 204c. The composite substrate 204a and the resin substrate 204g of 204b are bonded to the dielectric substrate 202 facing each other. That is, the metal foil 204c of the composite substrate 204a and the metal foil 204c of the composite substrate 204b are disposed opposite each other. In some embodiments, the resin substrate 204g can include materials such as fiberglass, and the dielectric constant of the resin substrate 204g can range from 10.0 to 20.0.
請一併參閱圖2A與圖2B,在貼合複合基板204a與204b之後,可以透過機械加工(例如,CNC加工)或者雷射切割的方式,沿著介電基板202的法線N1切割介 電基板202以及複合基板204a與204b,以形成內埋結構210。此內埋結構210包含第一介電材料122’以及兩個第二介電材料124a與124b,其中第二介電材料124a與124b分別位於第一介電材料122’的相對兩側。請一併參閱圖2A與圖2B,本實施例的內埋結構210的寬度w範圍可以落在1.27mm至2.54mm之間,例如2mm,但本發明中內埋結構210的寬度w不限於以上範圍。 Referring to Figures 2A and 2B , after bonding the composite substrates 204a and 204b, the dielectric substrate 202 and the composite substrates 204a and 204b can be cut along a normal line N1 of the dielectric substrate 202 by machining (e.g., CNC machining) or laser cutting to form a buried structure 210. The buried structure 210 includes a first dielectric material 122′ and two second dielectric materials 124a and 124b, respectively, with the second dielectric materials 124a and 124b located on opposite sides of the first dielectric material 122′. Please refer to Figures 2A and 2B together. The width w of the embedded structure 210 in this embodiment can range from 1.27 mm to 2.54 mm, for example, 2 mm. However, the width w of the embedded structure 210 in the present invention is not limited to the above range.
另一方面,請參閱圖3A,提供基板305。此基板305包含介電層305i以及兩層金屬層305m,這兩層金屬層305m分別位於介電層305i的相對兩側。介電層305i的材料可以與第一介電材料122’相同,而金屬層305m的材料可以包含銅。特別一提的是,基板305可以是通過熱壓貼合的方式,將數層接合膠片(prepreg)堆疊貼合而形成。舉例來說,在本實施例中,是將兩層接合膠片301互相堆疊,並將包含金屬層305m的兩層接合膠片302堆疊於接合膠片301的外側,接著通過熱壓貼合而形成基板305。 On the other hand, referring to FIG. 3A , a substrate 305 is provided. This substrate 305 includes a dielectric layer 305i and two metal layers 305m, one located on opposite sides of the dielectric layer 305i. The dielectric layer 305i can be made of the same material as the first dielectric material 122′, while the metal layer 305m can be made of copper. Specifically, the substrate 305 can be formed by laminating multiple layers of bonding films (prepreg) using thermal compression. For example, in this embodiment, two layers of bonding adhesive sheets 301 are stacked on top of each other, and two layers of bonding adhesive sheets 302 including metal layers 305m are stacked on the outer sides of the bonding adhesive sheets 301. These layers are then bonded together by heat and pressure to form a substrate 305.
接著,請參閱圖3B移除基板305的一部分,以形成開口305t,此開口305t連通基板305的相對兩表面305f與305s。形成開口305t之後,在開口305t內設置內埋結構210。在本實施例中,在開口305t內設置內埋結構210的步驟包含:在基板305的表面305s上貼合膠帶307(例如,聚乙烯對苯二甲酸酯膠帶),且膠帶307覆蓋開口305t。接著,在膠帶307上,設置內埋結構210, 以使內埋結構210穿過開口305t。在膠帶307上設置內埋結構210之後,可以通過熱壓貼合的方式,接合基板305以及內埋結構210。接著,移除膠帶307。 Next, referring to FIG. 3B , a portion of the substrate 305 is removed to form an opening 305t . This opening 305t connects the opposing surfaces 305f and 305s of the substrate 305. After the opening 305t is formed, the embedded structure 210 is disposed within the opening 305t . In this embodiment, the step of disposing the embedded structure 210 within the opening 305t includes attaching an adhesive tape 307 (e.g., polyethylene terephthalate tape) to the surface 305s of the substrate 305, with the tape 307 covering the opening 305t. The embedded structure 210 is then disposed on the tape 307 such that the embedded structure 210 passes through the opening 305t . After the embedded structure 210 is placed on the tape 307, the substrate 305 and the embedded structure 210 can be bonded together using heat and pressure lamination. The tape 307 is then removed.
特別一提的是,在接合基板305以及內埋結構210之後,基板305的介電層305i會連接於內埋結構210的第一介電材料122’以及第二介電材料124a與124b。進一步而言,基板305的表面305f與表面305s分別暴露內埋結構210的第二介電材料124a與124b(以忽略金屬箔片204c的角度來看)。換言之,將內埋結構210設置於開口305t中的方式為:第一介電材料122’夾設於第二介電材料124a與124b之間,且第二介電材料124a與124b則分別朝向基板305外側。 It is worth noting that after bonding the substrate 305 and the embedded structure 210, the dielectric layer 305i of the substrate 305 is connected to the first dielectric material 122' and the second dielectric materials 124a and 124b of the embedded structure 210. Furthermore, the surfaces 305f and 305s of the substrate 305 expose the second dielectric materials 124a and 124b of the embedded structure 210, respectively (when ignoring the metal foil 204c). In other words, the embedded structure 210 is disposed within the opening 305t such that the first dielectric material 122' is sandwiched between the second dielectric materials 124a and 124b, with the second dielectric materials 124a and 124b facing outward from the substrate 305.
請參閱圖3C,在開口305t內設置內埋結構210之後,在基板305中形成多個導電通孔146。基板305的兩層金屬層305m通過導電通孔146而互相電性連接,且導電通孔146分布於內埋結構210的相對兩側。詳細來說,一部分的導電通孔146位於左側的基板305中(即位於內埋結構210的左側),而另一部分的導電通孔146則位於右側的基板305中(即位於內埋結構210的右側)。 Referring to Figure 3C , after the embedded structure 210 is disposed within the opening 305t, a plurality of conductive vias 146 are formed in the substrate 305. The two metal layers 305m of the substrate 305 are electrically connected via the conductive vias 146, which are distributed on opposite sides of the embedded structure 210. Specifically, some conductive vias 146 are located in the left substrate 305 (i.e., on the left side of the embedded structure 210), while others are located in the right substrate 305 (i.e., on the right side of the embedded structure 210).
形成導電通孔146的步驟可以包含:通過機械鑽孔的方式,在基板305中形成多個連通表面305f與305s的通孔(未繪示)。接著,通過例如通孔電鍍(Plating Through Hole;PTH)的方式,在通孔的內壁上沉積金屬層(例如銅層),以形成導電通孔146。 The step of forming conductive vias 146 may include: forming a plurality of through-holes (not shown) in substrate 305 connecting surfaces 305f and 305s by mechanical drilling. Then, a metal layer (e.g., a copper layer) is deposited on the inner walls of the through-holes by, for example, plating through hole (PTH) to form conductive vias 146.
請參閱圖3D,在形成導電通孔146之後,可以通過蝕刻的方式,移除內埋結構210的金屬箔片204c,以暴露暴露內埋結構210的第二介電材料124a與124b。除此之外,在本實施例中,在形成導電通孔146之後,也可以通過蝕刻的方式,圖案化基板305的金屬層305m,以形成如圖1A所繪示的金屬層144。 Referring to FIG. 3D , after forming the conductive via 146, the metal foil 204c of the embedded structure 210 can be removed by etching to expose the second dielectric materials 124a and 124b of the embedded structure 210. Furthermore, in this embodiment, after forming the conductive via 146, the metal layer 305m of the substrate 305 can also be patterned by etching to form the metal layer 144 shown in FIG. 1A .
綜合上述,本發明至少一實施例利用第一介電材料以及第二介電材料之間介電常數的差異,來提供電波訊號傳輸路徑。第一介電材料的一部分夾設於第二介電材料之間,並形成如三明治般堆疊的內埋結構。由於第一介電材料的介電常數小於第二介電材料的介電常數,故電波訊號傾向於通過位於兩個第二介電材料之間的部分第一介電材料而傳遞。此種倚靠介電材料差異值形成電波傳遞路徑的方式可以避免電波訊號因為通過金屬導線(例如銅導線)而損耗,故有助於降低電波傳遞的損耗率。 In summary, at least one embodiment of the present invention utilizes the difference in dielectric constants between a first dielectric material and a second dielectric material to provide a radio signal transmission path. A portion of the first dielectric material is sandwiched between the second dielectric materials, forming a sandwich-like embedded structure. Because the dielectric constant of the first dielectric material is smaller than that of the second dielectric material, radio signals tend to propagate through the portion of the first dielectric material located between the two second dielectric materials. This method of forming a radio signal transmission path based on the difference in dielectric constants prevents radio signal loss caused by passing through metal conductors (e.g., copper conductors), thereby helping to reduce radio signal loss.
雖然本發明之實施例已揭露如上,然其並非用以限定本發明之實施例,任何所屬技術領域中具有通常知識者,在不脫離本發明之實施例的精神和範圍內,當可作些許的更動與潤飾,故本發明之實施例的保護範圍當視後附的申請專利範圍所界定者為準。 Although the embodiments of the present invention have been disclosed above, they are not intended to limit the embodiments of the present invention. Anyone with ordinary skill in the art may make minor changes and modifications without departing from the spirit and scope of the embodiments of the present invention. Therefore, the scope of protection of the embodiments of the present invention shall be determined by the scope of the attached patent application.
100:電波傳輸板 100: Radio wave transmission board
120:介電波導結構 120: Dielectric waveguide structure
122:第一介電材料 122: First dielectric material
122t:凹槽 122t: Groove
124a,124b:第二介電材料 124a, 124b: Second dielectric material
140:基板整合波導結構 140: Substrate-integrated waveguide structure
142:介電層 142: Dielectric layer
144:金屬層 144: Metal layer
146:導電通孔 146:Conductive via
D1:長軸方向 D1: Long axis direction
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|---|---|---|---|---|
| US3157847A (en) * | 1961-07-11 | 1964-11-17 | Robert M Williams | Multilayered waveguide circuitry formed by stacking plates having surface grooves |
| TW201824634A (en) * | 2016-12-23 | 2018-07-01 | 財團法人工業技術研究院 | Electromagnetic wave transmitting board differential electromagnetic wave transmitting board |
| CN108448211A (en) * | 2018-02-12 | 2018-08-24 | 西南电子技术研究所(中国电子科技集团公司第十研究所) | Planar dielectric waveguide terahertz filter |
| US20190019768A1 (en) * | 2016-01-15 | 2019-01-17 | Plasma Antennas Ltd | Three Terminal Solid State Plasma Monolithic Microwave Integrated Circuit |
-
2023
- 2023-11-27 TW TW112145891A patent/TWI893545B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3157847A (en) * | 1961-07-11 | 1964-11-17 | Robert M Williams | Multilayered waveguide circuitry formed by stacking plates having surface grooves |
| US20190019768A1 (en) * | 2016-01-15 | 2019-01-17 | Plasma Antennas Ltd | Three Terminal Solid State Plasma Monolithic Microwave Integrated Circuit |
| TW201824634A (en) * | 2016-12-23 | 2018-07-01 | 財團法人工業技術研究院 | Electromagnetic wave transmitting board differential electromagnetic wave transmitting board |
| CN108448211A (en) * | 2018-02-12 | 2018-08-24 | 西南电子技术研究所(中国电子科技集团公司第十研究所) | Planar dielectric waveguide terahertz filter |
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|---|---|
| TW202522779A (en) | 2025-06-01 |
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