TWI893214B - processing equipment - Google Patents

Abstract

[Topic] Preventing chips generated during one process from adversely affecting another process. [Solution] When processing a wafer 100 using a grinding stone 98, the first partition plate 11 and the second partition plate 12 separate the processing chamber 20 into upper and lower sections by surrounding the grinding stone 98 with a first semicircular recess 111 and a second semicircular recess 121. Therefore, the polishing pad 93 located on the upper side of the processing chamber 20 is protected from chips generated by the front end of the grinding stone 98 located on the lower side of the processing chamber 20 when processing the wafer 100. This prevents chips from adhering to the polishing pad 93. Therefore, damage to the back side 102 of the wafer 100 being ground by the polishing pad 93 due to chips can be prevented.

Description

Processing equipment

The present invention relates to a processing device.

In a TSV wafer with TSVs (Through Silicon Vias), which serve as through-electrodes, the backside is planarized by grinding and CMP (Chemical Mechanical Polishing), while the exposed through-electrodes on the front side are planarized by CMP. In recent years, as the wiring for the through-electrodes has shifted from aluminum to copper, the through-electrodes are now planarized by turning and CMP performed by a tool. Therefore, as disclosed in Patent Document 1, both turning and CMP can be performed by a single processing device, resulting in device miniaturization and improved productivity.

[Learning Technology Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Publication No. 2016-92281

In the device described in Patent Document 1, turning and CMP are performed in the same processing chamber. Therefore, turning chips adhere to the bottom surface of the polishing pad, potentially damaging the polished surface of the wafer during CMP.

Furthermore, when the processing method can perform both grinding and CMP, grinding chips also adhere to the lower surface of the polishing pad and may damage the polished surface of the wafer during CMP.

Therefore, the purpose of the present invention is to prevent the chips generated during one process from adversely affecting another process that is subsequently performed.

The processing apparatus of the present invention (the present processing apparatus) comprises: a chuck table that holds a wafer via a holding surface; a processing means having a processing tool for processing the wafer held on the chuck table; a processing feed means for processing and feeding the processing tool in a direction perpendicular to the holding surface; and a processing chamber that accommodates the chuck table and the processing tool. The processing means comprises: a first mounting member having an upper surface connected to the lower end of a spindle extending in the perpendicular direction and having a first processing tool mounted on its lower surface; and a second mounting member having an inner diameter larger than an outer diameter of the first mounting member. The processing chamber comprises a first processing tool and a second processing tool; ... The tool is not affected by the processing chips formed by the first processing tool when processing the wafer, and the separation mechanism includes: a first separation plate, which has a first semicircular recess along the outer side of the first processing tool and extends in the horizontal direction; a second separation plate, which has a second semicircular recess along the outer side of the first processing tool and facing the first semicircular recess, and extends in the horizontal direction; a first horizontal moving mechanism, which moves the first separation plate in the horizontal direction; and a second horizontal moving mechanism, which moves the second separation plate in the horizontal direction, and, when the wafer is processed by the second processing tool When a wafer is held on the holding surface, the first and second partition plates are horizontally spaced apart from the spindle, allowing the second machining tool to pass between the first and second semicircular recesses. When the first machining tool processes the wafer held on the holding surface, the first and second partition plates are horizontally moved toward the spindle. The circle formed by the first and second semicircular recesses surrounds the first machining tool, protecting the second machining tool from machining debris generated by the first machining tool during wafer processing.

In this processing device, the first processing tool may be a turning tool or a grinding stone, and the second processing tool may be a grinding pad.

Furthermore, the processing apparatus may be further provided with water spray outlets on the first partition plate and the second partition plate for spraying water toward the first processing tool.

In this processing apparatus, when a wafer is processed by a first machining tool, the first and second partition plates divide the processing chamber into upper and lower sections, with the first and second semicircular recesses surrounding the first machining tool. This protects the second machining tool, located on the upper side of the processing chamber, from machining debris generated by the tip of the first machining tool, located on the lower side of the processing chamber, while processing the wafer. This prevents machining debris from adhering to the second machining tool, thus preventing damage to the processed surface of the wafer being processed by the second machining tool.

1: Processing equipment

3: Column

5: Control Department

100: Wafer

101: Front

102: Back

103: Protective film

10: Separation mechanism

11: First partition

12: Second partition

111: First semicircular concave portion

121: Second semicircular concave part

13: First horizontal movement mechanism

14: Second horizontal movement mechanism

16: Water spray outlet

20: Processing Room

21:On the board

22:Side panel

23:Front panel

24: Back panel

211: Add tool guide hole

30: Maintaining Means

31: Chuck table

32: Keep the face

36: Frame

33: Supporting member

34: Rotational means

35: Supporting Pillars

37: Cover plate

39: Air supply source

60: Air flow path

40: Y-axis direction movement means

50: Processing feed method

70: Processing methods

71: Spindle unit

72: Main axis

73: Spindle motor

74: Shell

721: First axis

722:Thrust Plate

723: Second axis

724: Cylinder large diameter

725: Cylinder small diameter

80: Advance and Retreat Mechanism

81: Accommodation Room

82: Piston

83: Piston rod

84: Guidance Department

85: Regulator

86: Air Source

90: Ring plate

91: Ring mounting

92: Pressure plate

93: Grinding pad

95: Round plate mounting

96:Grinding wheel

97: Wheel abutment

98:Grinding stone

Figure 1 is a cross-sectional view showing the structure of the processing device.

Figure 2 is a cross-sectional view showing the structure of the processing device.

Figure 3 is an explanatory diagram showing the first and second partition plates connected to each other.

Figure 4 is a cross-sectional view showing the structure of the processing device.

Figure 5 is an explanatory diagram showing the first partition plate and the second partition plate spaced apart from each other.

Figure 6 is an explanatory diagram showing the first and second partition plates equipped with water spray outlets.

As shown in FIG1 , the processing apparatus 1 of this embodiment is used for grinding and polishing a wafer 100 as a workpiece, and includes a control unit 5 for controlling the various components of the processing apparatus 1 .

Wafer 100 is, for example, a circular semiconductor wafer. The front surface 101 of wafer 100 holds multiple components and is protected by a protective film 103. The back surface 102 of wafer 100 is the surface to be ground and polished.

The processing device 1 is equipped with a holding device 30 for holding the workpiece. The holding device 30 includes a chuck table 31, a support member 33 for supporting the chuck table 31, and a rotating device 34 for rotating the chuck table 31.

The chuck table 31 includes a holding surface 32 for holding the wafer 100 and a frame 36 surrounding the holding surface 32. In this embodiment, the upper surface of the frame 36 is formed to be approximately flush with the holding surface 32 and has the same height as the holding surface 32.

The holding surface 32 of the chuck table 31 is made of, for example, a porous material and is connected to a suction source (not shown), thereby sucking and holding the wafer 100 through the protective film 103. In other words, the chuck table 31 holds the wafer 100 via the holding surface 32.

Furthermore, the chuck table 31 is able to rotate about a central axis extending in the Z-axis direction and passing through the center of the holding surface 32 while the wafer 100 is held by the holding surface 32, using a rotating mechanism 34 disposed below. Thus, the wafer 100 is held on the holding surface 32 and rotated about the center of the holding surface 32.

A cover plate 37 is provided around the support member 33. Furthermore, bellows covers (not shown) that expand and contract in the Y-axis direction are connected to the +Y and -Y sides of the cover plate 37. Furthermore, a Y-axis movement mechanism 40 is provided below the retaining mechanism 30. The Y-axis movement mechanism 40 moves the retaining mechanism 30 in the Y-axis direction.

The Y-axis moving means 40 moves the holding means 30 relative to the processing means 70 in the Y-axis direction parallel to the holding surface 32. In this embodiment, the Y-axis moving means 40 is configured to move the holding means 30 relative to the processing means 70 in the Y-axis direction.

In addition, the processing device 1 may also include a rotary table instead of the Y-axis moving means 40, and the rotary table may include multiple holding means 30 as the horizontal moving means.

The Y-axis moving means 40 comprises a Y-axis guide rail 42 parallel to the Y-axis direction, a Y-axis moving stage 45 that slides on the Y-axis guide rail 42, a Y-axis ball screw 43 parallel to the Y-axis guide rail 42, a Y-axis motor 44 connected to the Y-axis ball screw 43, and a holding stage 41 that holds these components.

The Y-axis moving stage 45 is slidably mounted on the Y-axis guide rail 42 via a sliding member 451. A nut 401 is fixed to the bottom surface of the Y-axis moving stage 45. The Y-axis ball screw 43 is threadedly engaged with this nut 401. The Y-axis motor 44 is connected to one end of the Y-axis ball screw 43.

In the Y-axis moving means 40, the Y-axis motor 44 rotates the Y-axis ball screw 43, causing the Y-axis moving stage 45 to move in the Y-axis direction along the Y-axis guide rail 42. The support member 33 of the holding means 30 is mounted on the Y-axis moving stage 45 via support columns 35. Therefore, as the Y-axis moving stage 45 moves in the Y-axis direction, the holding means 30, including the chuck stage 31, also moves in the Y-axis direction.

In this embodiment, the holding means 30 is moved along the Y-axis direction between a processing position at the rear (+Y direction side) and a loading and unloading position at the front (-Y direction side) by the Y-axis moving means 40.

As shown in FIG1 , a column 3 is erected behind (on the +Y direction side of) the holding means 30 . A processing means 70 for processing the wafer 100 and a processing feed means 50 are provided on the front surface of the column 3 .

The feed mechanism 50 is a vertical movement mechanism that feeds the holding mechanism 30 and the processing mechanism 70 relative to each other in the Z-axis direction (feed direction) perpendicular to the holding surface 32. In this embodiment, the feed mechanism 50 is configured to feed the processing mechanism 70 relative to the holding mechanism 30 in the Z-axis direction perpendicular to the holding surface 32.

The processing feed mechanism 50 comprises a Z-axis guide rail 51 parallel to the Z-axis direction, a Z-axis moving stage 53 that slides on the Z-axis guide rail 51, a Z-axis ball screw 52 parallel to the Z-axis guide rail 51, a Z-axis motor 54, a Z-axis encoder 55 for detecting the rotation angle of the Z-axis motor 54, a memory unit 57 for storing the detection results of the Z-axis encoder 55, and a bracket 56 mounted on the front surface of the Z-axis moving stage 53. The bracket 56 holds the processing mechanism 70.

The Z-axis moving stage 53 is slidably mounted on the Z-axis guide rail 51 via a sliding member 531. A nut 501 is fixed to the rear side (back side) of the Z-axis moving stage 53. The Z-axis ball screw 52 is threadedly engaged with this nut 501. The Z-axis motor 54 is connected to one end of the Z-axis ball screw 52.

In the processing feed mechanism 50, the Z-axis motor 54 rotates the Z-axis ball screw 52, causing the Z-axis moving stage 53 to move in the Z-axis direction along the Z-axis guide rail 51. Consequently, the bracket 56 mounted on the Z-axis moving stage 53 and the processing mechanism 70 held therein also move in the Z-axis direction along with the Z-axis moving stage 53.

The processing device 70 includes a spindle unit 71. The spindle unit 71 includes a spindle 72 extending perpendicularly to the holding surface 32, a spindle motor 73 that rotates the spindle 72, and a housing 74 that surrounds the spindle 72 and the spindle motor 73.

The main shaft 72 includes a first shaft portion 721 and a second shaft portion 723 having a larger diameter than the first shaft portion 721. A thrust plate 722 is disposed between the first and second shaft portions 721 and 723. The main shaft 72 further includes a cylinder large-diameter portion 724 formed below the second shaft portion 723 and a cylinder small-diameter portion 725 formed below the cylinder large-diameter portion 724.

An air flow path 60 is formed inside the housing 74. The air flow path 60 is connected to the air supply source 39. Furthermore, the air flow path 60 branches into multiple branch paths within the housing 74. The air flow path 60 communicates with openings on the top surface 61, side 62, and bottom surface 63 of the housing 74.

Air supplied by the air supply source 39 passes through the air flow path 60 of the housing 74 and is ejected from the openings on the upper surface 61, side 62, and lower surface 63 of the housing 74 to the outside of the housing 74.

Air is ejected from the upper surface 61, side 62, and lower surface 63 of the housing 74 to create gaps between the housing 74 and the thrust plate 722 of the main shaft 72, between the housing 74 and the second shaft portion 723 of the main shaft 72, and between the housing 74 and the cylinder large diameter portion 724 of the main shaft 72. Bearings are thus formed within these gaps, rotatably supporting the main shaft 72 using air rather than contact.

The upper surface of a circular plate mounting member 95, serving as a first mounting member, is connected to the lower end of the small-diameter cylinder portion 725, which forms the lower end of the main shaft 72. Furthermore, a guide portion 84 is provided between the lower surface of the large-diameter cylinder portion 724 of the main shaft 72 and the circular plate mounting member 95, connecting the two.

A grinding wheel 96 is mounted on the bottom surface of the circular plate mounting member 95. The grinding wheel 96 comprises a wheel base 97 and a plurality of roughly rectangular grinding stones 98 arranged in a ring at the lower end of the wheel base 97.

The grinding stone 98 is rotated by the spindle motor 73 via the spindle 72, the disc mount 95, and the wheel base 97.

Furthermore, an advance/retract mechanism 80 is provided in the large-diameter cylinder portion 724 and the small-diameter cylinder portion 725 of the main shaft 72. The advance/retract mechanism 80 includes a housing chamber 81 provided in the large-diameter cylinder portion 724 of the main shaft 72. A piston 82 is accommodated in the housing chamber 81.

The lower portion of piston 82 is connected to multiple piston rods 83. The multiple piston rods 83 are arranged at equal intervals along the circumference of piston 82. Figure 1 shows only one piston rod 83.

An annular plate 90 is connected to the lower end of the piston rod 83. Furthermore, an annular plate 90 is formed with a through hole 901 that penetrates the guide portion 84.

Attached to the lower surface of annular plate 90 is an annular mounting member 91, serving as a second mounting member. Mounted on the lower surface of annular mounting member 91 is an annular polishing pad 93, serving as a second tool for polishing the workpiece, via a pressure plate 92.

The annular mounting member 91, the pressure plate 92, and the grinding pad 93 have inner diameters larger than the outer diameters of the circular plate mounting member 95 and the grinding wheel 96, and are formed into an annular shape concentric with the circular plate mounting member 95.

The polishing pad 93 is rotated by the spindle motor 73 about its center through the spindle 72, annular plate 90, annular mounting member 91, and pressure plate 92.

This polishing pad 93 and the aforementioned grinding stone 98 are examples of machining tools used to machine the wafer 100 held on the chuck table 31. Furthermore, the grinding stone 98 is an example of a first machining tool provided on the inner side, and the polishing pad 93 is an example of a second machining tool provided on the outer side.

The retractor mechanism 80's housing chamber 81 is connected to an air source 86 via a regulator 85. Air from the air source 86 is supplied from above to the housing chamber 81 via the regulator 85, applying a thrust in the -Z direction to the piston 82, allowing it to descend in the Z-axis direction.

Furthermore, by supplying air from below into the housing chamber 81, a thrust in the +Z direction is applied to the piston 82, allowing the piston 82 to rise in the Z-axis direction.

When piston 82 moves up and down in the Z-axis direction, annular plate 90, connected to piston 82 via piston rod 83, moves up and down while being guided by guide 84. This movement also causes polishing pad 93 mounted on annular plate 90 to move up and down. This causes polishing pad 93 and grinding stone 98 to move forward and backward relative to each other along the Z-axis.

In this way, the advance/retract mechanism 80 moves the circular plate mount 95 and the annular mount 91 relative to each other in the Z-axis direction, perpendicular to the retaining surface 32, thereby functioning as a selection mechanism for selectively bringing the grinding stone 98 or the polishing pad 93 closer to the retaining surface 32.

Furthermore, as mentioned above, the inner diameters of the annular mount 91, pressure plate 92, and grinding pad 93 are larger than the outer diameters of the circular plate mount 95 and grinding wheel 96. Therefore, the circular plate mount 95 and grinding wheel 96 are housed without contacting the inner sides of the annular mount 91, pressure plate 92, and grinding pad 93, allowing the grinding pad 93 to move vertically relative to the grinding stone 98.

As shown in Figure 1 and Figure 2, a cross-sectional view of the processing apparatus 1 along the Y-axis, the processing apparatus 1 includes a roughly frame-shaped processing chamber 20 below the processing device 70. The processing chamber 20 is configured to accommodate the chuck table 31 of the holding device 30 that holds the wafer 100 during processing, as well as the grinding stone 98 and polishing pad 93 used as tools in the processing device 70.

As shown in Figures 1 and 2, the processing chamber 20 includes an upper plate 21 having a tool insertion hole 211. The tool insertion hole 211 is provided to allow the tooling of the processing device 70, namely the grinding stone 98 and the polishing pad 93, to be introduced into the processing chamber 20. The processing chamber 20 is constructed to include the upper plate 21, side plates 22, a front plate 23 on the -Y side, a rear plate 24 on the +Y side, and a cover plate 37 serving as a base plate for the holding device 30. The front plate 23 is provided with a length sufficient to allow the holding device 30 to move along the Y-axis into the processing chamber 20 and is suspended from the upper plate 21.

In addition, a vertically retractable cylindrical bellows shield connects the upper plate 21 of the processing chamber 20 and the lower surface of the bracket 56 to block the tool introduction hole 211, preventing machining chips from being ejected from the tool introduction hole 211.

As shown in Figures 1 and 2 , the processing chamber 20 is equipped with a partition mechanism 10. When the grinding stone 98 is moved closer to the holding surface 32 than the polishing pad 93 by the advancing and retracting mechanism 80 and the grinding stone 98 processes the wafer 100 held on the holding surface 32, the partition mechanism 10 surrounds the grinding stone 98, dividing the processing chamber 20 into two parts, protecting the polishing pad 93 from the chips generated by the grinding stone 98 while processing the wafer 100.

As shown in Figure 2, the partition structure 10 includes a first partition plate 11 and a second partition plate 12 extending together in the horizontal direction.

Figure 3 shows the processing chamber 20 and the partition mechanism 10 from above. As shown in Figure 3 , the first partition plate 11 has a first semicircular recess 111 along the outer edge of the grinding stone 98. Furthermore, the second partition plate has a second semicircular recess 121 along the outer edge of the grinding stone 98 and facing the first semicircular recess 111.

Furthermore, as shown in FIG2 , the partition mechanism 10 includes: a first horizontal movement mechanism 13 that moves the first partition plate 11 horizontally along the X-axis; and a second horizontal movement mechanism 14 that moves the second partition plate 12 horizontally along the X-axis.

These first horizontal movement mechanism 13 and second horizontal movement mechanism 14 are installed on the lower surface of the upper plate 21 in the processing chamber 20.

As shown in Figure 3, the first and second horizontal motion mechanisms 13 and 14 each include an arm 201 connected to the first and second partition plates 11 and 12, and a drive device 200 that moves the arm 201 along the X-axis. In the first and second horizontal motion mechanisms 13 and 14, the drive device 200 moves the arm 201 along the X-axis, thereby horizontally moving the first and second partition plates 11 and 12 along the X-axis, bringing them closer together and connecting them.

Specifically, in the partition mechanism 10, the first partition plate 11 and the second partition plate 12 are brought into proximity and connected by the first horizontal movement mechanism 13 and the second horizontal movement mechanism 14. As a result, the first partition plate 11 and the second partition plate 12 divide the processing chamber 20 into upper and lower sections, with the first and second semicircular recesses 111 and 121 surrounding the grinding stone 98. The first and second semicircular recesses 111 and 121 are connected to form a circle smaller than the outer diameter of the polishing pad 93 (shown by the dotted line in Figure 3), which surrounds the grinding stone 98. Therefore, the partition mechanism 10 protects the polishing pad 93 from processing debris generated by the grinding stone 98 while processing the wafer 100.

In addition, in order to facilitate the movement of the first partition plate 11 and the second partition plate 12, a guide rail extending in the X-axis direction may also be provided.

In the processing apparatus 1 having such a configuration, while polishing a wafer 100 held on the holding surface 32 using the polishing pad 93, as shown in Figures 4 and 5, the control unit 5 (shown in Figure 1) moves the first and second partition plates 11 and 12 horizontally away from the spindle 72. This allows the polishing pad 93 to pass between the first semicircular recess 111 of the first partition plate 11 and the second semicircular recess 121 of the second partition plate 12. The control unit 5 then controls the advance/retract mechanism 80 to bring the polishing pad 93 closer to the holding surface 32 than the grinding stone 98. In this state, the control unit 5 continues polishing the wafer 100 held on the holding surface 32 using the polishing pad 93.

Meanwhile, when the wafer 100 held on the holding surface 32 is ground by the grinding stone 98, as shown in Figures 2 and 3, the control unit 5 (shown in Figure 1) controls the advance/retract mechanism 80 to bring the grinding stone 98 closer to the holding surface 32 than the polishing pad 93. The control unit 5 then moves the first and second partition plates 11 and 12 horizontally toward the spindle, encircling the grinding stone 98 within the circle formed by the connection between the first and second semicircular recesses 111 and 121. In this state, the control unit 5 continues to grind the wafer 100 held on the holding surface 32 using the grinding stone 98.

As described above, in this embodiment, when the wafer 100 is processed by the grinding stone 98, the first partition plate 11 and the second partition plate 12 divide the processing chamber 20 into upper and lower sections, with the first and second semicircular recesses 111 and 121 surrounding the grinding stone 98. This protects the polishing pad 93 located on the upper side of the processing chamber 20 from machining debris generated by the front end (lower surface) of the grinding stone 98 located on the lower side of the processing chamber 20. This prevents the debris from adhering to the polishing pad 93. Consequently, damage to the back surface 102 of the wafer 100 being polished by the polishing pad 93 can be prevented.

Furthermore, in this embodiment, as shown in Figure 6 , a plurality of water spray outlets 16 for spraying water toward the grinding stone 98 may be provided on the upper surfaces of the first and second partition plates 11 and 12 . The water spray outlets 16 are used to spray processing water from a water source (not shown) toward the grinding stone 98 from the side, as indicated by the arrows in Figure 6 , during machining performed by the grinding stone 98 connected to the first and second partition plates 11 and 12 .

In this configuration, by spraying processing water onto the grinding stone 98 from the side during processing, processing debris generated by the grinding stone 98 while processing the wafer 100 is prevented from reaching the polishing pad 93 through the gap between the first and second partition plates 11 and 12 and the grinding stone 98. This effectively protects the polishing pad 93 from processing debris.

Alternatively, the water jets 16 may be provided on the lower surface or inside the first and second partition plates 11 and 12, instead of being provided on the upper surfaces of the first and second partition plates 11 and 12, so as to spray water toward the grinding stones 98.

Alternatively, water spray outlets 16 may be provided on the inner side of the first semicircular recess 111 of the first partition plate 11 and the inner side of the second semicircular recess 121 of the second partition plate 12.

In this embodiment, the processing apparatus 1 includes a grinding stone 98 as a first inner processing tool and a polishing pad 93 as a second outer processing tool. The polishing pad 93 can be used for either CMP polishing or dry polishing.

Furthermore, the possible combinations of the first and second machining tools in the machining apparatus 1 are not limited to the combination of the grinding stone 98 and the polishing pad 93. For example, the machining apparatus 1 may include a turning tool as the first machining tool on the inner side and a polishing pad 93 as the second machining tool on the outer side. Alternatively, the machining apparatus 1 may include a polishing stone 98 as the first machining tool on the inner side and a turning tool or a polishing stone 98 as the second machining tool on the outer side. Alternatively, the machining apparatus 1 may include a turning tool as the first machining tool on the inner side and a polishing stone 98 as the second machining tool on the outer side. Alternatively, the machining apparatus 1 may include a polishing pad 93 as the first machining tool on the inner side and a turning tool, a polishing stone 98, or a polishing pad 93 as the second machining tool on the outer side.

1: Processing equipment

3: Column

5: Control Department

100: Wafer

101: Front

102: Back

103: Protective film

10: Separation mechanism

11: First partition

111: First semicircular concave portion

20: Processing Room

21:On the board

211: Add tool guide hole

23:Front panel

24: Back panel

30: Maintaining Means

31: Chuck table

32: Keep the face

33: Supporting member

34: Rotational means

35: Supporting Pillars

36: Frame

37: Cover plate

39: Air supply source

40: Y-axis direction movement means

401: Nut Section

41: Holding Station

42: Y-axis guide rail

43: Y-axis ball screw

44: Y-axis motor

45: Y-axis moving stage

451: Sliding member

50: Processing feed method

501: Nut Section

51: Z-axis guide rail

52: Z-axis ball screw

53: Z-axis moving stage

531: Sliding member

54: Z-axis motor

55: Z-axis encoder

56: Bracket

57: Memory

60: Air flow path

61: Upper surface

62: Side

63: Lower surface

70: Processing methods

71: Spindle unit

72: Main axis

721: First axis

722:Thrust Plate

723: Second axis

724: Cylinder large diameter

725: Cylinder small diameter

73: Spindle motor

74: Shell

80: Advance and Retreat Mechanism

81: Accommodation Room

82: Piston

83: Piston rod

84: Guidance Department

85: Regulator

86: Air Source

90: Ring plate

901:Through hole

91: Ring mounting

92: Pressure plate

93: Grinding pad

95: Round plate mounting

96:Grinding wheel

97: Wheel abutment

98:Grinding stone

Claims (3)

A processing device comprises: a chuck table that holds a wafer via a holding surface; a processing means having a processing tool for processing the wafer held on the chuck table; a processing feed means for processing and feeding the processing tool in a direction perpendicular to the holding surface; and a processing chamber that accommodates the chuck table and the processing tool. The processing means comprises: a first mounting member whose upper surface is connected to the lower end of a spindle extending in the perpendicular direction and has a first processing tool mounted on its lower surface; a second mounting member having an inner diameter larger than an outer diameter of the first mounting member and being annular and concentric with the first mounting member and having a second processing tool mounted on its lower surface; and a selecting means for selectively bringing the first processing tool or the second processing tool closer to the holding surface by moving the first mounting member and the second mounting member relative to each other in the perpendicular direction. The processing chamber comprises: A partition mechanism that surrounds the first processing tool and partitions the processing chamber into upper and lower parts when the first processing tool processes a wafer held on the holding surface, thereby protecting the second processing tool from processing debris generated by the first processing tool. The partition mechanism comprises: A first partition plate having a first semicircular recess along an outer edge of the first processing tool and extending horizontally; A second partition plate having a second semicircular recess along an outer edge of the first processing tool and facing the first semicircular recess and extending horizontally; A first horizontal movement mechanism that moves the first partition plate horizontally; and A second horizontal movement mechanism that moves the second partition plate horizontally. When the second machining tool processes a wafer held on the holding surface, the first and second partition plates are horizontally spaced apart from the spindle, allowing the second machining tool to pass between the first and second semicircular recesses. When the first machining tool processes a wafer held on the holding surface, the first and second partition plates are horizontally moved toward the spindle, so that the circle formed by the first and second semicircular recesses surrounds the first machining tool, thereby protecting the second machining tool from machining debris generated by the first machining tool during wafer processing. The processing device of claim 1, wherein: the first processing tool is a turning tool or a grinding stone, and the second processing tool is a grinding pad. The processing apparatus of claim 1, wherein: The first partition plate and the second partition plate are further provided with water spray outlets for spraying water toward the first processing tool.