[go: up one dir, main page]

TWI893017B - Silicon dioxide particles, resin composition, resin film and metal-clad laminate - Google Patents

Silicon dioxide particles, resin composition, resin film and metal-clad laminate

Info

Publication number
TWI893017B
TWI893017B TW109137478A TW109137478A TWI893017B TW I893017 B TWI893017 B TW I893017B TW 109137478 A TW109137478 A TW 109137478A TW 109137478 A TW109137478 A TW 109137478A TW I893017 B TWI893017 B TW I893017B
Authority
TW
Taiwan
Prior art keywords
resin film
loss tangent
dielectric loss
polyimide
ghz
Prior art date
Application number
TW109137478A
Other languages
Chinese (zh)
Other versions
TW202124280A (en
Inventor
王宏遠
藤麻織人
平石克文
田中睦人
出合博之
Original Assignee
日商日鐵化學材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日鐵化學材料股份有限公司 filed Critical 日商日鐵化學材料股份有限公司
Publication of TW202124280A publication Critical patent/TW202124280A/en
Application granted granted Critical
Publication of TWI893017B publication Critical patent/TWI893017B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206Insulating
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/002Physical properties
    • C08K2201/005Additives being defined by their particle size in general
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/16Solid spheres
    • C08K7/18Solid spheres inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

本發明提供一種能夠在不損害彎折性等機械特性的情況下實現介電特性的改善的二氧化矽粒子以及藉由添加所述二氧化矽粒子而介電特性得到改善的樹脂組成物、樹脂膜及覆金屬層疊板。二氧化矽粒子用於3 GHz~20 GHz的頻率範圍中,藉由利用雷射繞射散射法的體積基準的粒度分佈測定而獲得的頻度分佈曲線中的累計值成為50%的平均粒徑D50 為0.3 μm~3 μm的範圍內,比表面積為超過5 m2 /g且為20 m2 /g以下的範圍內,利用共振腔微擾法所測定的介電損耗角正切為0.004以下。樹脂組成物含有所述二氧化矽粒子、與聚醯胺酸或聚醯亞胺,相對於聚醯胺酸或聚醯亞胺,二氧化矽粒子的含量為30體積%~70體積%的範圍內。The present invention provides silicon dioxide particles capable of improving dielectric properties without compromising mechanical properties such as bendability, as well as a resin composition, a resin film, and a metal-clad laminate having improved dielectric properties by adding the silicon dioxide particles. The silica particles are used in a frequency range of 3 GHz to 20 GHz, have a mean particle size ( D50) of 0.3 μm to 3 μm, and a specific surface area of more than 5 /g but less than 20 /g. The dielectric loss tangent (DLT) measured by the cavity perturbation method is 0.004 or less. The resin composition contains the silica particles and polyamide or polyimide, with the silica particle content ranging from 30 volume percent to 70 volume percent relative to the polyamide or polyimide.

Description

二氧化矽粒子、樹脂組成物、樹脂膜及覆金屬層疊板Silicon dioxide particles, resin composition, resin film and metal-clad laminate

本發明有關於一種能夠較佳地用於高頻區域中所使用的電氣及/或電子設備的二氧化矽粒子、含有所述二氧化矽粒子的樹脂組成物、使用所述樹脂組成物的樹脂膜及覆金屬層疊板。 The present invention relates to silicon dioxide particles that can be preferably used in electrical and/or electronic devices used in high-frequency regions, a resin composition containing the silicon dioxide particles, a resin film using the resin composition, and a metal-clad laminate.

近年來,如手機、發光二極管(light emitting diode,LED)照明器具、汽車發動機周圍相關零件所代表般對電子設備的小型化、輕量化的要求不斷提高。伴隨於此,對於設備的小型化、輕量化有利的可撓性電路基板在電子技術領域中得到廣泛使用。而且,其中將聚醯亞胺製成絕緣層的可撓性電路基板由於其耐熱性、耐化學品性等良好,故得到廣泛使用。 In recent years, demand for smaller and lighter electronic devices, such as mobile phones, light-emitting diode (LED) lighting fixtures, and parts surrounding automobile engines, has steadily increased. Consequently, flexible circuit boards, which contribute significantly to these reductions, have become widely used in the electronics field. In particular, flexible circuit boards using polyimide as the insulating layer are gaining widespread use due to their excellent heat and chemical resistance.

另一方面,伴隨電氣及/或電子設備的高性能化或高功能化,資訊的高速傳輸化不斷發展。因此,對用於電氣及/或電子設備的零件或構件也要求應對高速傳輸。關於在此種用途中所使用的樹脂材料,為了具有與高速傳輸化對應的電氣特性,嘗試實現低介電常數化、低介電損耗角正切化。例如提出一種在聚醯亞胺中以成為總固體成分的5重量%~70重量%的量調配粒徑1μm以 下的二氧化矽等填料而成的低介電樹脂組成物(專利文獻1)。另外,為了實現低介電損耗角正切化,也提出了在具有源自雙馬來醯亞胺化合物的結構單元的聚醯亞胺中調配60質量%以上的二氧化矽等無機填充劑而成的熱硬化性樹脂組成物(專利文獻2)。 Meanwhile, with the advancement of performance and functionality in electrical and/or electronic devices, high-speed information transmission continues to advance. Consequently, components and parts used in these devices are also required to support high-speed transmission. To achieve electrical properties compatible with high-speed transmission, resin materials used in these applications are being sought to achieve low dielectric constants and dielectric loss tangents. For example, a low-dielectric resin composition has been proposed, in which a filler such as silica with a particle size of 1 μm or less is blended into polyimide at a level of 5% to 70% by weight of the total solids (Patent Document 1). In order to achieve a low dielectric loss tangent, a thermosetting resin composition has been proposed in which an inorganic filler such as silica is blended at a concentration of 60% by mass or more into a polyimide having structural units derived from a bismaleimide compound (Patent Document 2).

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利第3560501號公報 [Patent Document 1] Japanese Patent No. 3560501

[專利文獻2]日本專利特開2018-012747號公報 [Patent Document 2] Japanese Patent Publication No. 2018-012747

二氧化矽粒子具有其粒徑越大則介電損耗角正切越低的傾向,即便在聚醯亞胺等樹脂中調配的情況下,降低樹脂膜的介電損耗角正切的效果也大。另一方面,添加粒徑大的二氧化矽粒子時存在降低樹脂膜的彎折性的問題。 Silica particles tend to have a lower dielectric loss tangent as their particle size increases. Even when blended into resins such as polyimide, they significantly reduce the dielectric loss tangent of the resulting resin film. However, adding large silica particles can reduce the flexibility of the resin film.

本發明的目的在於提供一種能夠在不損害彎折性等機械特性的情況下實現介電特性的改善的二氧化矽粒子,進而提供藉由添加所述二氧化矽粒子而介電特性得到改善的樹脂組成物及樹脂膜。 The present invention aims to provide silica particles that can improve dielectric properties without compromising mechanical properties such as bendability, and further to provide a resin composition and resin film having improved dielectric properties by adding the silica particles.

本發明的二氧化矽粒子是用於3GHz~20GHz的頻率範圍中的二氧化矽粒子,藉由利用雷射繞射散射法的體積基準的粒度分 佈測定而獲得的頻度分佈曲線中的累計值成為50%的平均粒徑D50為0.3μm~3μm的範圍內,比表面積為超過5m2/g且為20m2/g以下的範圍內,利用共振腔微擾法所測定的介電損耗角正切為0.004以下。 The silica particles of the present invention are for use in the frequency range of 3 GHz to 20 GHz. The average particle size ( D50) at which 50% of the cumulative value in the frequency distribution curve, as determined by volume-based particle size distribution measurement using the laser diffraction scattering method, is within the range of 0.3 μm to 3 μm. The specific surface area is within the range of greater than 5 /g and less than 20 /g. Furthermore, the dielectric loss tangent, as measured by the cavity perturbation method, is less than 0.004.

本發明的樹脂組成物是含有所述二氧化矽粒子、與聚醯胺酸或聚醯亞胺的樹脂組成物,相對於所述聚醯胺酸或聚醯亞胺,所述二氧化矽粒子的含量為30體積%~70體積%的範圍內。 The resin composition of the present invention is a resin composition containing the silica particles and polyamic acid or polyimide. The content of the silica particles is in the range of 30 volume % to 70 volume % relative to the polyamic acid or polyimide.

本發明的樹脂膜是具有單層或多層聚醯亞胺層的樹脂膜,所述聚醯亞胺層的至少一層是包含所述樹脂組成物的硬化物的含二氧化矽的聚醯亞胺層,所述含二氧化矽的聚醯亞胺層的厚度為10μm~200μm的範圍內。 The resin film of the present invention is a resin film having a single or multiple polyimide layers, at least one of which is a silicon dioxide-containing polyimide layer comprising a cured product of the resin composition, and the thickness of the silicon dioxide-containing polyimide layer is in the range of 10 μm to 200 μm.

本發明的樹脂膜中樹脂膜整體的厚度可為10μm~200μm的範圍內,所述含二氧化矽的聚醯亞胺層的厚度的比例可為50%以上。 The overall thickness of the resin film of the present invention can be in the range of 10 μm to 200 μm, and the thickness ratio of the silicon dioxide-containing polyimide layer can be greater than 50%.

本發明的覆金屬層疊板是包括絕緣樹脂層、與層疊於所述絕緣樹脂層的至少一個面上的金屬層的覆金屬層疊板,所述絕緣樹脂層包含所述樹脂膜。 The metal-clad laminate of the present invention comprises an insulating resin layer and a metal layer laminated on at least one surface of the insulating resin layer, wherein the insulating resin layer includes the resin film.

本發明的二氧化矽粒子儘管平均粒徑D50小至0.3μm~3μm的範圍內,但藉由控制比表面積,介電損耗角正切低,因此可有效用作面向高頻的絕緣材料。另外,本發明的樹脂組成物藉由含有所述二氧化矽粒子,能夠在不降低彎折性等機械特性的情況下 改善介電特性。因此,在使用本發明的樹脂組成物的電氣及/或電子設備或電子零件中,能夠應對高速傳輸化,並且可確保可靠性。 Despite having a small average particle size ( D50 ) ranging from 0.3 μm to 3 μm, the silica particles of the present invention exhibit a low dielectric loss tangent due to controlled specific surface area, making them effective as insulating materials for high-frequency applications. Furthermore, the inclusion of these silica particles in the resin composition of the present invention improves dielectric properties without compromising mechanical properties such as flexibility. Therefore, electrical and/or electronic devices or electronic components using the resin composition of the present invention can cope with increasing high-speed transmission while ensuring reliability.

以下,對本發明的實施方式進行說明。 The following describes the implementation of the present invention.

[二氧化矽粒子] [Silicon dioxide particles]

本發明的一實施方式的二氧化矽粒子用於3GHz~20GHz的頻率範圍中。更具體而言,是用作在3GHz~20GHz的頻率範圍中所使用的電氣及/或電子設備中的零件或構件的材料的二氧化矽粒子。本實施方式的二氧化矽粒子的形狀較佳為球狀。再者,所謂“球狀”是指形狀接近圓球狀、且平均長徑與平均短徑的比為1或接近1的粒子。 The silica particles of one embodiment of the present invention are used in the frequency range of 3 GHz to 20 GHz. More specifically, the silica particles are used as a material for parts or components in electrical and/or electronic devices used in the frequency range of 3 GHz to 20 GHz. The silica particles of this embodiment are preferably spherical in shape. Furthermore, the term "spherical" refers to particles having a shape that is nearly spherical and a ratio of the average major diameter to the average minor diameter of 1 or close to 1.

本實施方式的二氧化矽粒子藉由利用雷射繞射散射法的體積基準的粒度分佈測定而獲得的頻度分佈曲線中的累計值成為50%的平均粒徑D50為0.3μm~3μm的範圍內,較佳為0.5μm~2.5μm的範圍內。若為所述範圍內,則例如可抑制調配至樹脂膜中時的彎折性的降低,同時提高介電特性。若二氧化矽粒子的平均粒徑D50未滿0.3μm,則無法充分獲得降低介電損耗角正切的效果。另一方面,若平均粒徑D50超過3μm,則在調配至樹脂膜 中時彎折性降低等機械特性的維持變得困難。 The silica particles of this embodiment have an average particle size ( D50) , at which 50% of the cumulative values in the frequency distribution curve obtained by volume-based particle size distribution measurement using the laser diffraction scattering method are within the range of 0.3 μm to 3 μm, preferably 0.5 μm to 2.5 μm. Within this range, for example, a decrease in flexibility when blended into a resin film can be suppressed, while simultaneously improving dielectric properties. If the average particle size ( D50 ) of the silica particles is less than 0.3 μm, the effect of reducing the dielectric loss tangent cannot be fully achieved. On the other hand, if the average particle size (D50 ) exceeds 3 μm, maintaining mechanical properties, such as reduced flexibility, becomes difficult when blended into a resin film.

另外,本實施方式的二氧化矽粒子的比表面積為超過5m2/g且為20m2/g以下的範圍內,較佳為6m2/g~15m2/g的範圍內。藉由將二氧化矽粒子的比表面積設為所述範圍內,能夠提高作為二氧化矽粒子的體積密度,故即便平均粒徑D50小至0.3μm~3μm的範圍內,也可獲得低的介電損耗角正切。具體而言,可將利用共振腔微擾法所測定的二氧化矽粒子的介電損耗角正切設為0.004以下。在比表面積為5m2/g以下的情況下或超過20m2/g的情況下,二氧化矽粒子的介電損耗角正切未充分變低,無法獲得調配的效果。二氧化矽粒子的比表面積可利用布厄特(brunauer-emmett-teller,BET)比表面積測定法來求出。 Furthermore, the specific surface area of the silica particles of this embodiment is within the range of greater than 5 /g and less than 20 /g, preferably between 6 /g and 15 /g. By setting the specific surface area of the silica particles within this range, the volume density of the silica particles can be increased, thereby achieving a low dielectric loss tangent even with an average particle size D50 as small as 0.3 μm to 3 μm. Specifically, the dielectric loss tangent of the silica particles, as measured by the cavity perturbation method, can be set to 0.004 or less. If the specific surface area is less than 5 m 2 /g or exceeds 20 m 2 /g, the dielectric loss tangent of the silica particles will not be sufficiently reduced, and the blending effect cannot be achieved. The specific surface area of silica particles can be determined using the Brunauer-Emmett-Teller (BET) specific surface area measurement method.

再者,二氧化矽粒子可適宜選擇市售品而使用。例如可較佳地使用球狀非晶質二氧化矽粉末(日鐵化學&材料公司製造,商品名:SP40-10)、球狀非晶質二氧化矽粉末(日鐵化學&材料公司製造,商品名:SPH507)、球狀非晶質二氧化矽粉末(日鐵化學&材料公司製造,商品名:SPH516M)等。這些可並用兩種以上。 Furthermore, commercially available silica particles can be appropriately selected and used. For example, spherical amorphous silica powder (manufactured by Nippon Steel Chemicals & Materials Co., Ltd., trade name: SP40-10), spherical amorphous silica powder (manufactured by Nippon Steel Chemicals & Materials Co., Ltd., trade name: SPH507), and spherical amorphous silica powder (manufactured by Nippon Steel Chemicals & Materials Co., Ltd., trade name: SPH516M) are preferably used. Two or more of these can be used in combination.

[樹脂組成物] [Resin composition]

本發明的一實施方式的樹脂組成物是含有聚醯胺酸或聚醯亞胺、與作為無機填料的所述二氧化矽粒子的樹脂組成物。樹脂組成物可為含有聚醯胺酸的清漆(樹脂溶液),也可為含有溶劑可溶性的聚醯亞胺的聚醯亞胺溶液。 The resin composition of one embodiment of the present invention is a resin composition containing polyamic acid or polyimide and the aforementioned silica particles as an inorganic filler. The resin composition may be a varnish (resin solution) containing polyamic acid or a polyimide solution containing a solvent-soluble polyimide.

<聚醯胺酸或聚醯亞胺> <Polyamide or polyimide>

聚醯亞胺一般而言是由下述通式(1)表示。此種聚醯亞胺可藉由使用實質上等莫耳的二胺成分與酸二酐成分,在有機極性溶媒中進行聚合的公知的方法來製造。在所述情況下,為了將黏度設為所需的範圍,可調整酸二酐成分相對於二胺成分的莫耳比,其範圍例如較佳為設為莫耳比為0.980~1.03的範圍內。 Polyimide is generally represented by the following general formula (1). Such polyimide can be produced by a known method using substantially equal molar amounts of a diamine component and an acid dianhydride component for polymerization in an organic polar solvent. In this case, the molar ratio of the acid dianhydride component to the diamine component can be adjusted to achieve a desired viscosity, preferably within a molar ratio range of 0.980 to 1.03, for example.

此處,Ar1是具有一個以上芳香族環的四價有機基,Ar2是具有一個以上芳香族環的二價有機基。而且,Ar1可以說是酸二酐的殘基,Ar2可以說是二胺的殘基。另外,n表示通式(1)的結構單元的重複數,為200以上、較佳為300~1000的數。 Here, Ar1 is a tetravalent organic group having one or more aromatic rings, and Ar2 is a divalent organic group having one or more aromatic rings. Furthermore, Ar1 can be considered a residual group of an acid dianhydride, and Ar2 can be considered a residual group of a diamine. Furthermore, n represents the number of repetitions of the structural unit of general formula (1), and is 200 or more, preferably 300 to 1000.

作為酸二酐,例如較佳為由O(OC)2-Ar1-(CO)2O表示的芳香族四羧酸二酐,可例示提供下述芳香族酸酐殘基作為Ar1的酸二酐。 As the acid dianhydride, for example, an aromatic tetracarboxylic dianhydride represented by O(OC) 2 -Ar 1 -(CO) 2 O is preferred, and examples thereof include acid dianhydrides that provide the following aromatic acid anhydride residue as Ar 1 .

[化2] [Chemistry 2]

酸二酐可單獨使用或混合兩種以上而使用。這些中,較佳為使用選自均苯四甲酸二酐(pyromellitic dianhydride,PMDA)、3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-biphenyl tetracarboxylic dianhydride,BPDA)、3,3',4,4'-二苯甲酮四羧酸二酐(3,3',4,4'-benzophenone tetracarboxylic dianhydride,BTDA)、3,3',4,4'-二苯基碸四羧酸二酐(3,3',4,4'-diphenyl sulfone tetracarboxylic dianhydride,DSDA)、及4,4'-氧基二鄰苯二甲酸二酐(4,4'-oxydiphthalic dianhydride,ODPA)中者。 Acid dianhydrides can be used alone or in combination of two or more. Among these, preferably used are those selected from pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyl tetracarboxylic dianhydride (BPDA), 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA), 3,3',4,4'-diphenyl sulfone tetracarboxylic dianhydride (DSDA), and 4,4'-oxydiphthalic dianhydride (ODPA).

作為二胺,例如較佳為由H2N-Ar2-NH2表示的芳香族二胺,可例示提供下述芳香族二胺殘基作為Ar2的芳香族二胺。 As the diamine, for example, an aromatic diamine represented by H 2 N—Ar 2 —NH 2 is preferred, and examples thereof include aromatic diamines having the following aromatic diamine residue as Ar 2 .

[化3] [Chemistry 3]

這些二胺中,可例示二胺基二苯基醚(diamino diphenyl ether,DAPE)、2,2'-二甲基-4,4'-二胺基聯苯(2,2'-dimethyl-4,4'-diamino biphenyl,m-TB)、對苯二胺(paraphenylene diamine,p-PDA)、1,3-雙(4-胺基苯氧基)苯(1,3-bis(4-amino phenoxy)benzene,TPE-R)、1,3-雙(3-胺基苯氧基)苯(1,3-bis(3-amino phenoxy)benzene,APB)、1,4-雙(4-胺基苯氧基)苯(1,4-bis(4-amino phenoxy)benzene,TPE-Q)、及2,2-雙[4-(4-胺基苯氧基)苯基]丙烷(2,2-bis[4-(4-amino phenoxy)phenyl]propane,BAPP)、及2,2-雙(三氟甲基)聯苯胺(2,2-bis(trifluoromethyl)benzidine,TFMB)作為較佳者。 Examples of these diamines include diaminodiphenyl ether (DAPE), 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB), paraphenylene diamine (p-PDA), 1,3-bis(4-aminophenoxy)benzene (TPE-R), 1,3-bis(3-aminophenoxy)benzene (APB), 1,4-bis(4-aminophenoxy)benzene (TPE-Q), and 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-bis[4-(4-aminophenoxy)phenyl]propane). phenoxy)phenyl]propane (BAPP), and 2,2-bis(trifluoromethyl)benzidine (TFMB) are preferred.

聚醯亞胺可藉由使酸二酐與二胺化合物在溶媒中反應,生成作為前體的聚醯胺酸後使其加熱閉環(醯亞胺化)來製造。例如,使酸二酐與二胺化合物以大致等莫耳溶解於有機溶媒中,在0℃~100℃的範圍內的溫度下攪拌30分鐘~72小時使其進行聚合反應,由此獲得聚醯胺酸。反應時,以生成的前體在有機溶媒中成為5重量%~30重量%的範圍內、較佳為成為10重量%~20重量%的範圍內的方式溶解反應成分。作為聚合反應中使用的有機溶媒,例如可列舉:N,N-二甲基甲醯胺(N,N-dimethyl formamide,DMF)、N,N-二甲基乙醯胺(N,N-dimethyl acetamide,DMAc)、N,N-二乙基乙醯胺、N-甲基-2-吡咯烷酮(N-methyl-2-pyrrolidone,NMP)、2-丁酮、二甲基亞碸(dimethyl sulfoxide,DMSO)、六甲基磷醯胺、N-甲基己內醯胺、硫酸二甲酯、環己酮、二噁烷、四氫呋喃、二乙二醇二甲醚、三乙二醇二甲醚、甲酚等。也可將這些溶媒並用兩種以上,進而也能夠並用二甲苯、甲苯之類的芳香族烴。另外,作為此種有機溶媒的使用量,並無特別限制,較佳為調整為藉由聚合反應而獲得的聚醯胺酸溶液的濃度成為5重量%~30重量%左右的使用量來使用。 Polyimide can be produced by reacting an acid dianhydride and a diamine compound in a solvent to generate a polyamide precursor, which is then heated to undergo ring closure (imidization). For example, the acid dianhydride and the diamine compound are dissolved in an organic solvent at approximately equimolar amounts and stirred at a temperature between 0°C and 100°C for 30 minutes to 72 hours to allow polymerization to proceed, thereby obtaining the polyamide. During the reaction, the reaction components are dissolved so that the generated precursor concentration in the organic solvent is within the range of 5% to 30% by weight, preferably within the range of 10% to 20% by weight. Examples of organic solvents used in the polymerization reaction include N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), N,N-diethylacetamide, N-methyl-2-pyrrolidone (NMP), 2-butanone, dimethyl sulfoxide (DMSO), hexamethylphosphatamide, N-methylcaprolactam, dimethyl sulfate, cyclohexanone, dioxane, tetrahydrofuran, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, and cresol. Two or more of these solvents may be used in combination, and aromatic hydrocarbons such as xylene and toluene may also be used in combination. The amount of the organic solvent used is not particularly limited, but it is preferably adjusted so that the concentration of the polyamide solution obtained by the polymerization reaction is approximately 5% to 30% by weight.

所合成的聚醯胺酸通常有利的是用作反應溶媒溶液,根據需要可濃縮、稀釋或置換成其他有機溶媒來形成樹脂組成物。使聚醯胺酸醯亞胺化的方法並無特別限制,例如可較佳地採用在 所述溶媒中,在80℃~400℃的範圍內的溫度條件下花費1小時~24小時進行加熱這一熱處理。 The synthesized polyamine is typically used as a reaction solvent solution. It can be concentrated, diluted, or replaced with another organic solvent as needed to form a resin composition. The method for imidizing the polyamine is not particularly limited; for example, a heat treatment in the aforementioned solvent at a temperature between 80°C and 400°C for 1 to 24 hours is preferably employed.

<調配組成> <Blending composition>

相對於聚醯胺酸或聚醯亞胺,樹脂組成物中的二氧化矽粒子的含量為30體積%~70體積%的範圍內,較佳為30體積%~60體積%的範圍內。若二氧化矽粒子的含有比例未滿30體積%,則無法充分獲得降低介電損耗角正切的效果。另外,若二氧化矽粒子的含有比例超過70體積%,則在形成樹脂膜時變脆,彎折性降低,並且在欲形成樹脂膜的情況下,樹脂組成物的黏度變高,作業性也降低。 The content of silica particles in the resin composition is within the range of 30% to 70% by volume, preferably 30% to 60% by volume, relative to polyamide or polyimide. If the silica particle content is less than 30% by volume, the dielectric loss tangent reduction effect cannot be fully achieved. Furthermore, if the silica particle content exceeds 70% by volume, the resulting resin film becomes brittle, reducing its bendability. Furthermore, the viscosity of the resin composition increases during film formation, reducing workability.

本實施方式的樹脂組成物可含有有機溶媒。作為有機溶媒,例如可列舉:N,N-二甲基甲醯胺(DMF)、N,N-二甲基乙醯胺(DMAc)、N,N-二乙基乙醯胺、N-甲基-2-吡咯烷酮(NMP)、2-丁酮、二甲基亞碸(DMSO)、六甲基磷醯胺、N-甲基己內醯胺、硫酸二甲酯、環己酮、二噁烷、四氫呋喃、二乙二醇二甲醚、三乙二醇二甲醚、甲酚等。也可將這些溶媒並用兩種以上,進而也能夠並用二甲苯、甲苯之類的芳香族烴。作為有機溶媒的含量,並無特別限制,較佳為調整為聚醯胺酸或聚醯亞胺的濃度成為5重量%~30重量%左右的使用量來使用。 The resin composition of this embodiment may contain an organic solvent. Examples of such organic solvents include N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), N,N-diethylacetamide, N-methyl-2-pyrrolidone (NMP), 2-butanone, dimethyl sulfoxide (DMSO), hexamethylphosphatamide, N-methylcaprolactam, dimethyl sulfate, cyclohexanone, dioxane, tetrahydrofuran, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, and cresol. Two or more of these solvents may be used in combination, and aromatic hydrocarbons such as xylene and toluene may also be used in combination. The content of the organic solvent is not particularly limited, but it is preferably adjusted to a concentration of about 5% to 30% by weight of the polyamide or polyimide.

進而,本實施方式的樹脂組成物視需要可在不損害發明的效果的範圍內含有所述二氧化矽粒子以外的無機填料或有機填料。具體而言,例如可列舉:不具備所述條件的二氧化矽粒子或 氧化鋁、氧化鎂、氧化鈹、氮化硼、氮化鋁、氮化矽、氟化鋁、氟化鈣等無機填料、氟系聚合物粒子或液晶聚合物粒子等有機填料。這些可使用一種或混合兩種以上而使用。進而視需要,可適宜調配塑化劑、硬化促進劑、偶合劑、填充劑、顏料、阻燃劑等作為其他任意成分。 Furthermore, the resin composition of this embodiment may optionally contain inorganic or organic fillers other than the aforementioned silica particles, as long as the effects of the invention are not impaired. Specifically, examples include silica particles that do not meet the aforementioned conditions, inorganic fillers such as aluminum oxide, magnesium oxide, curium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, and calcium fluoride, and organic fillers such as fluorine-based polymer particles or liquid crystal polymer particles. These may be used alone or in combination. Furthermore, as necessary, plasticizers, curing accelerators, coupling agents, fillers, pigments, flame retardants, and the like may be appropriately blended as other optional ingredients.

<黏度> <Viscosity>

作為提高塗敷樹脂組合物時的處理性、容易形成均勻厚度的塗膜的黏度範圍,樹脂組成物的黏度較佳為例如設為3000cps~100000cps的範圍內,更佳為設為5000cps~50000cps的範圍內。若偏離所述黏度範圍,則在利用塗佈機等進行塗敷作業時膜上容易產生厚度不均、條紋等不良情況。 To improve the handling of the resin composition during application and facilitate the formation of a uniformly thick coating film, the viscosity of the resin composition is preferably within the range of 3,000 cps to 100,000 cps, and more preferably within the range of 5,000 cps to 50,000 cps. If the viscosity deviates from this range, defects such as uneven thickness and streaks may occur on the film during application using a coating machine.

<樹脂組成物的製備> <Preparation of resin composition>

在製備樹脂組成物時,例如可在聚醯胺酸的樹脂溶液中直接調配二氧化矽粒子。或者考慮到填料的分散性,也可在投入了作為聚醯胺酸的原料的酸二酐成分及二胺成分中任一者的反應溶媒中預先調配二氧化矽粒子後,在攪拌下投入另一種原料進行聚合。在任一方法中,可一次全部投入二氧化矽粒子,也可分數次一點一點地添加。另外,原料也可一起放入,也可分數次一點一點地混合。 When preparing the resin composition, for example, silica particles can be directly mixed into the polyamide resin solution. Alternatively, considering the dispersibility of the filler, silica particles can be pre-mixed in a reaction solvent containing either the dianhydride component or the diamine component, the raw materials for polyamide, and then the other raw materials can be added under stirring to carry out polymerization. In either method, the silica particles can be added all at once or added incrementally over several times. Furthermore, the raw materials can be added all at once or mixed incrementally over several times.

[樹脂膜] [resin film]

本實施方式的樹脂膜是具有單層或多層聚醯亞胺層的樹脂膜,聚醯亞胺層的至少一層是包含所述樹脂組成物的硬化物的含 二氧化矽的聚醯亞胺層即可。 The resin film of this embodiment is a resin film having a single or multiple polyimide layers, and at least one of the polyimide layers may be a silicon dioxide-containing polyimide layer comprising a cured product of the resin composition.

在樹脂膜中,由樹脂組成物形成的含二氧化矽的聚醯亞胺層的厚度例如較佳為10μm~200μm的範圍內,更佳為25μm~100μm的範圍內。若含二氧化矽的聚醯亞胺層的厚度未滿10μm,則樹脂膜變脆,另外無法充分獲得改善樹脂膜的介電特性的效果。相反,若含二氧化矽的聚醯亞胺層的厚度超過200μm,則有在樹脂膜的彎折性降低等方面不利的傾向。 In the resin film, the thickness of the silica-containing polyimide layer formed from the resin composition is preferably in the range of 10 μm to 200 μm, more preferably in the range of 25 μm to 100 μm. If the thickness of the silica-containing polyimide layer is less than 10 μm, the resin film becomes brittle and the effect of improving the dielectric properties of the resin film is not fully achieved. Conversely, if the thickness of the silica-containing polyimide layer exceeds 200 μm, there is a tendency for disadvantages such as a decrease in the bendability of the resin film.

樹脂膜整體的厚度例如較佳為10μm~200μm的範圍內,更較佳為25μm~100μm的範圍內。若樹脂膜的厚度未滿10μm,則在製造覆金屬層疊板時的搬送步驟中容易產生金屬箔出現褶皺、且樹脂膜破裂等不良情況。相反,若樹脂膜的厚度超過200μm,則有在樹脂膜的彎折性降低等方面不利的傾向。 The overall thickness of the resin film is preferably within the range of 10 μm to 200 μm, more preferably 25 μm to 100 μm. If the resin film thickness is less than 10 μm, problems such as wrinkling of the metal foil and tearing of the resin film may occur during the transport step during metal-clad laminate production. Conversely, if the resin film thickness exceeds 200 μm, the film's flexibility may be compromised.

另外,含二氧化矽的聚醯亞胺層的厚度相對於樹脂膜整體的厚度的比例較佳為50%以上。含二氧化矽的聚醯亞胺層的厚度相對於樹脂膜整體的厚度的比例未滿50%時,無法充分獲得介電特性的改善效果。 Furthermore, the ratio of the thickness of the silicon dioxide-containing polyimide layer to the overall thickness of the resin film is preferably 50% or greater. If the ratio of the thickness of the silicon dioxide-containing polyimide layer to the overall thickness of the resin film is less than 50%, the dielectric properties cannot be sufficiently improved.

形成含二氧化矽的聚醯亞胺層的方法可無特別限定地採用公知的方法。此處示出其最有代表性的例子。 The method for forming the silicon dioxide-containing polyimide layer can be adopted without particular limitation by any known method. The most representative example is shown here.

首先,將樹脂組成物直接流延塗佈至任意的支撐基材上來形成塗佈膜。其次,將塗佈膜在150℃以下的溫度下以某程度將溶媒乾燥並加以去除。在樹脂組成物含有聚醯胺酸的情況下,之後為了進一步醯亞胺化,在100℃~400℃、較佳為130℃~360℃的溫 度範圍內對塗佈膜進行5分鐘~30分鐘左右的熱處理。如此可在支撐基材上形成含二氧化矽的聚醯亞胺層。在設為兩層以上的聚醯亞胺層的情況下,塗佈第一聚醯胺酸的樹脂溶液並乾燥後,塗佈第二聚醯胺酸的樹脂溶液並進行乾燥。其以後,同樣地如第三聚醯胺酸的樹脂溶液、其次第四聚醯胺酸的樹脂溶液、…般按照所需的次數依次塗佈聚醯胺酸的樹脂溶液並進行乾燥。之後,宜一併在100℃~400℃的溫度範圍內進行5分鐘~30分鐘左右的熱處理,進行醯亞胺化。若熱處理的溫度低於100℃,則有聚醯亞胺的脫水閉環反應無法充分進行的擔憂,相反若超過400℃,則有聚醯亞胺層劣化的擔憂。 First, the resin composition is cast directly onto an optional support substrate to form a coating film. Next, the coating film is dried to a certain extent at a temperature below 150°C to remove the solvent. If the resin composition contains polyamide, the coating film is then heat-treated for approximately 5 to 30 minutes at a temperature between 100°C and 400°C, preferably between 130°C and 360°C, for further imidization. This forms a polyimide layer containing silica on the support substrate. When using two or more polyimide layers, apply the first polyamide resin solution and dry it, then apply the second polyamide resin solution and dry it. The third polyamide resin solution, then the fourth polyamide resin solution, and so on, are applied and dried as many times as desired. Afterwards, it is preferable to heat-treat the imidization process at a temperature between 100°C and 400°C for approximately 5 to 30 minutes. If the heat treatment temperature is lower than 100°C, there is a concern that the dehydration and ring-closing reaction of the polyimide may not proceed sufficiently. Conversely, if it exceeds 400°C, there is a concern that the polyimide layer may deteriorate.

另外,列舉形成含二氧化矽的聚醯亞胺層的另一例。 In addition, another example of forming a polyimide layer containing silicon dioxide is given.

首先,將樹脂組成物流延塗佈至任意的支撐基材上而以膜狀成型。藉由在支撐基材上加熱乾燥所述膜狀成型物來製成具有自支撐性的凝膠膜。自支撐基材剝離凝膠膜後,樹脂組成物含有聚醯胺酸的情況下,進一步在高溫下進行熱處理並使其醯亞胺化,來製成聚醯亞胺的樹脂膜。 First, a resin composition is cast onto an optional supporting substrate to form a film. The film-shaped product is then dried on the supporting substrate under heat to produce a self-supporting gel membrane. After the gel membrane is peeled off from the supporting substrate, if the resin composition contains polyamide, it is further heat-treated at high temperatures to imidize it, producing a polyimide resin membrane.

用於形成含二氧化矽的聚醯亞胺層的支撐基材並無特別限定,可使用任意材質的基材。另外,在形成樹脂膜時,沒有必要在基材上形成完全完成了醯亞胺化的樹脂膜。例如,也可利用剝離等方法將半硬化狀態的聚醯亞胺前體狀態下的樹脂膜自支撐基材分離,分離後完成醯亞胺化而製成樹脂膜。 The supporting substrate used to form the silica-containing polyimide layer is not particularly limited; any substrate material may be used. Furthermore, when forming the resin film, it is not necessary to completely imidize the resin film on the substrate. For example, a semi-cured polyimide precursor resin film can be separated from the supporting substrate by peeling or other methods, and imidization can be completed after separation to form the resin film.

樹脂膜可僅包括含有無機填料的聚醯亞胺層(包含所述 含二氧化矽的聚醯亞胺層),也可具有不含有無機填料的聚醯亞胺層。在將樹脂膜設為多層層疊結構的情況下,若考慮到介電特性的改善,則較佳為所有層均含有無機填料。其中,藉由將含有無機填料的聚醯亞胺層的鄰接層設為不含有無機填料的層,或者設為其含量低的層,可具有可防止加工時等無機填料滑落的有利的效果。在具有不含有無機填料的聚醯亞胺層的情況下,其厚度例如宜設為含有無機填料的聚醯亞胺層的1/100~1/2的範圍內,較佳為設為1/20~1/3的範圍內。在具有不含有無機填料的聚醯亞胺層的情況下,若所述聚醯亞胺層與金屬層接觸,則金屬層與絕緣樹脂層的接著性提高。 The resin film may consist solely of a polyimide layer containing an inorganic filler (including the aforementioned silica-containing polyimide layer) or may include a polyimide layer without an inorganic filler. When the resin film is formed into a multilayer structure, it is preferable that all layers contain an inorganic filler in order to improve dielectric properties. Furthermore, by having the adjacent layer to the polyimide layer containing an inorganic filler be a layer without an inorganic filler, or a layer with a low inorganic filler content, it is advantageously possible to prevent the inorganic filler from slipping during processing. In the case of a polyimide layer without an inorganic filler, its thickness is preferably set within a range of 1/100 to 1/2, and more preferably 1/20 to 1/3, of that of a polyimide layer containing an inorganic filler. In the case of a polyimide layer without an inorganic filler, if the polyimide layer contacts a metal layer, the adhesion between the metal layer and the insulating resin layer is improved.

樹脂膜的熱膨脹係數(coefficient of thermal expansion,CTE)並無特別限定,例如較佳為處於10×10-6/K~60×10-6/K(10ppm/K~60ppm/K)的範圍內,更佳為20×10-6/K~50×10-6/K(20ppm/K~50ppm/K)的範圍內。若樹脂膜的熱膨脹係數小於10×10-6/K,則製成覆金屬層疊板後容易產生捲曲,處理性差。另一方面,若樹脂膜的熱膨脹係數超過60×10-6/K,則有作為可撓性基板等電子材料的尺寸穩定性差,另外耐熱性也降低的傾向。 The coefficient of thermal expansion (CTE) of the resin film is not particularly limited, but is preferably within the range of 10× 10-6 /K to 60× 10-6 /K (10ppm/K to 60ppm/K), and more preferably within the range of 20× 10-6 /K to 50× 10-6 /K (20ppm/K to 50ppm/K). If the CTE of the resin film is less than 10× 10-6 /K, it is prone to warping after being fabricated into a metal-clad laminate, resulting in poor handling. On the other hand, if the CTE of the resin film exceeds 60× 10-6 /K, the dimensional stability of electronic materials such as flexible substrates is poor, and heat resistance tends to decrease.

<介電損耗角正切> <Dielectric loss tangent>

樹脂膜例如在適用作電路基板的絕緣樹脂層的情況下,為了減少高頻信號傳輸時的介電損耗,作為膜整體,利用分裂後介電體共振器(split post dielectric resonator,SPDR)測定時的3GHz~20GHz下的介電損耗角正切(Tanδ)較佳為0.006以下,更佳 為0.004以下。為了改善電路基板的傳輸損耗,特別重要的是控制絕緣樹脂層的介電損耗角正切,藉由將介電損耗角正切設為所述範圍內,降低傳輸損耗的效果增大。因此,在將樹脂膜適用作例如高頻電路基板的絕緣樹脂層的情況下,可高效地減少傳輸損耗。若3GHz~20GHz下的介電損耗角正切超過0.006,則在將樹脂膜適用作電路基板的絕緣樹脂層時,容易產生在高頻信號的傳輸路徑上電氣信號的損耗變大等不良情況。3GHz~20GHz下的介電損耗角正切的下限值並無特別限制,但需要考慮將樹脂膜適用作電路基板的絕緣樹脂層時的物性控制。 When used as an insulating resin layer in a circuit board, for example, a resin film should have a dielectric loss tangent (Tanδ) of 0.006 or less, and more preferably 0.004 or less, in the 3 GHz to 20 GHz range, as measured using a split post dielectric resonator (SPDR). To improve transmission loss in circuit boards, it is particularly important to control the dielectric loss tangent of the insulating resin layer. By keeping the dielectric loss tangent within this range, the effect of reducing transmission loss is maximized. Therefore, when a resin film is used as an insulating resin layer in high-frequency circuit boards, for example, it can effectively reduce transmission loss. If the dielectric loss tangent exceeds 0.006 at 3 GHz to 20 GHz, the resin film can be used as an insulating resin layer on circuit boards, which can lead to problems such as increased electrical signal loss in high-frequency signal transmission paths. While there is no specific lower limit for the dielectric loss tangent at 3 GHz to 20 GHz, physical property control is necessary when using the resin film as an insulating resin layer on circuit boards.

<相對介電常數> <Relative dielectric constant>

樹脂膜例如在適用作電路基板的絕緣樹脂層的情況下,為了確保阻抗匹配性,較佳為作為膜整體而3GHz~20GHz下的相對介電常數為4.0以下。若3GHz~20GHz下的相對介電常數超過4.0,則在將樹脂膜適用作電路基板的絕緣樹脂層時,會導致介電損耗的惡化,容易產生在高頻信號的傳輸路徑上電氣信號的損耗變大等不良情況。 When used as an insulating resin layer on a circuit board, for example, a resin film should preferably have a relative dielectric constant of 4.0 or less at 3 GHz to 20 GHz to ensure impedance matching. A relative dielectric constant exceeding 4.0 at 3 GHz to 20 GHz can lead to deterioration in dielectric loss when used as an insulating resin layer on a circuit board, potentially causing problems such as increased electrical signal loss in high-frequency signal transmission paths.

<覆金屬層疊板> <Metal clad laminate>

本實施方式的覆金屬層疊板是包括絕緣樹脂層與層疊於所述絕緣樹脂層的至少一個面上的金屬層的覆金屬層疊板,絕緣樹脂層的至少一層包含所述樹脂膜。覆金屬層疊板可為僅在絕緣樹脂層的單面側具有金屬層的單面覆金屬層疊板,也可為在絕緣樹脂層的兩面具有金屬層的兩面覆金屬層疊板。 The metal-clad laminate of this embodiment includes an insulating resin layer and a metal layer laminated on at least one surface of the insulating resin layer, wherein at least one layer of the insulating resin layer comprises the resin film. The metal-clad laminate may be a single-sided metal-clad laminate having a metal layer on only one side of the insulating resin layer, or a double-sided metal-clad laminate having metal layers on both sides of the insulating resin layer.

本實施方式的覆金屬層疊板不排除使用用以將含有無機填料的聚醯亞胺層與金屬箔接著的接著劑。其中在絕緣樹脂層的兩面具有金屬層的兩面覆金屬層疊板中介隔存在接著層的情況下,為了不損害介電特性,接著層的厚度較佳為設為未滿全部絕緣樹脂層的厚度的30%,更佳為設為未滿20%。另外,在僅在絕緣樹脂層的單面具有金屬層的單面覆金屬層疊板中介隔存在接著層的情況下,為了不損害介電特性,接著層的厚度較佳為設為未滿全部絕緣樹脂層的厚度的15%,更佳為設為未滿10%。另外,接著層構成絕緣樹脂層的一部分,因此較佳為聚醯亞胺層。就賦予耐熱性的觀點而言,作為絕緣樹脂層的主要材質的含二氧化矽的聚醯亞胺的玻璃化溫度較佳為設為300℃以上。將玻璃化溫度設為300℃以上時能夠適宜選擇構成聚醯亞胺的所述酸二酐或二胺成分。 The metal-clad laminate of this embodiment may include an adhesive for bonding the inorganic filler-containing polyimide layer to the metal foil. In the case of a double-sided metal-clad laminate having metal layers on both sides of the insulating resin layer with an adhesive layer interposed therebetween, the thickness of the adhesive layer is preferably less than 30%, and more preferably less than 20%, of the thickness of the entire insulating resin layer to avoid compromising dielectric properties. Furthermore, when a bonding layer is interposed between a single-sided metal-clad laminate having a metal layer on only one side of the insulating resin layer, the thickness of the bonding layer is preferably less than 15% of the thickness of the entire insulating resin layer, and more preferably less than 10%, to avoid compromising dielectric properties. Furthermore, since the bonding layer constitutes a portion of the insulating resin layer, it is preferably a polyimide layer. From the perspective of imparting heat resistance, the glass transition temperature of the silica-containing polyimide, the primary material of the insulating resin layer, is preferably set to 300°C or higher. Setting the glass transition temperature to 300°C or higher allows for the appropriate selection of the acid dianhydride or diamine component constituting the polyimide.

作為製造將樹脂膜設為絕緣樹脂層的覆金屬層疊板的方法,例如可列舉直接或經由任意的接著劑將金屬箔加熱壓接在樹脂膜上的方法、或藉由金屬蒸鍍等方法將金屬層形成於樹脂膜上的方法等。再者,兩面覆金屬層疊板例如可利用在形成單面覆金屬層疊板後,使聚醯亞胺層相互面對,藉由熱壓加以壓接而形成的方法、或將金屬箔壓接在單面覆金屬層疊板的聚醯亞胺層而形成的方法等來獲得。 Methods for producing metal-clad laminates in which a resin film serves as the insulating resin layer include, for example, heat-pressing a metal foil onto a resin film directly or via an adhesive, or forming a metal layer on the resin film by methods such as metal deposition. Furthermore, double-sided metal-clad laminates can be produced, for example, by forming a single-sided metal-clad laminate and then placing polyimide layers facing each other and heat-pressing them, or by press-bonding a metal foil to the polyimide layer of a single-sided metal-clad laminate.

<金屬層> <Metal layer>

作為金屬層的材質,並無特別限制,例如可列舉:銅、不鏽 鋼、鐵、鎳、鈹、鋁、鋅、銦、銀、金、錫、鋯、鉭、鈦、鉛、鎂、錳及這些的合金等。其中,特佳為銅或銅合金。金屬層可為包含金屬箔者,也可為在膜上進行了金屬蒸鍍者。另外,就能夠直接塗佈樹脂組成物的方面而言,能夠使用金屬箔也能夠使用金屬板,較佳為銅箔或銅板。 The material of the metal layer is not particularly limited. Examples include copper, stainless steel, iron, nickel, beryllium, aluminum, zinc, indium, silver, gold, tin, zirconium, tantalum, titanium, lead, magnesium, manganese, and alloys thereof. Copper or copper alloys are particularly preferred. The metal layer may consist of metal foil or may be a film formed by metal deposition. In terms of direct application of the resin composition, either metal foil or metal plate can be used, with copper foil or copper plate being preferred.

金屬層的厚度根據覆金屬層疊板的使用目的而適宜設定,因此並無特別限定,例如較佳為5μm~3mm的範圍內,更佳為12μm~1mm的範圍內。若金屬層的厚度未滿5μm,則有在覆金屬層疊板的製造等的搬送時產生出現褶皺等不良情況的擔憂。相反若金屬層的厚度超過3mm,則會變硬,加工性變差。關於金屬層的厚度,一般而言在車載用電路基板等用途中合適的是厚的金屬層,在LED用電路基板等用途等中合適的是薄的金屬層。 The thickness of the metal layer is appropriately set depending on the intended use of the metal-clad laminate and is not particularly limited. For example, it is preferably within the range of 5μm to 3mm, and more preferably within the range of 12μm to 1mm. If the metal layer thickness is less than 5μm, there is a concern of problems such as wrinkling during transportation during the manufacture of the metal-clad laminate. Conversely, if the metal layer thickness exceeds 3mm, it becomes hard, impairing workability. Generally speaking, thicker metal layers are suitable for applications such as automotive circuit boards, while thinner metal layers are suitable for applications such as LED circuit boards.

[實施例] [Example]

以下,基於實施例對本發明的內容進行具體說明,但本發明並不限定於這些實施例的範圍。再者,在以下的實施例中,只要無特別說明,則各種測定、評價利用下述來進行。 The present invention is described in detail below based on the following examples. However, the present invention is not limited to the scope of these examples. Furthermore, in the following examples, unless otherwise specified, various measurements and evaluations were performed as follows.

[粒徑的測定] [Particle size determination]

使用雷射繞射式粒度分佈測定裝置(馬爾文(Malvern)公司製造,商品名:雷射粒度儀(Master Sizer)3000),將水設為分散介質在粒子折射率1.54的條件下,利用雷射繞射-散射式測定方式進行粒徑的測定。 Particle size was measured using a laser diffraction particle size distribution analyzer (Malvern, trade name: Master Sizer 3000) with water as the dispersion medium and a particle refractive index of 1.54 using the laser diffraction-scattering method.

[真比重的測定方法] [Method for determining true specific gravity]

使用連續自動粉體真密度測定裝置(清新(Seishin)企業公司製造,商品名:自動真登色馬特(AUTO TRUE DENSERMAT)-7000),利用比重計(pycnometer)法(液相置換法)進行真比重的測定。 True specific gravity was measured using a continuous automatic powder true density measuring device (manufactured by Seishin Enterprise Co., Ltd., trade name: AUTO TRUE DENSERMAT-7000) using the pycnometer method (liquid phase replacement method).

[比表面積的測定] [Determination of specific surface area]

依據日本工業標準(Japanese Industrial Standards,JIS)Z 8830:2013,藉由BET比表面積測定法,並使用比表面積測定裝置(貿騰(Mountech)公司製造,商品名:瑪庫索步(Macsorb)210)測定比表面積。 The specific surface area was measured in accordance with Japanese Industrial Standards (JIS) Z 8830:2013 using the BET specific surface area method using a specific surface area measuring apparatus (Macsorb 210, manufactured by Mountech).

[相對介電常數及介電損耗角正切的測定] [Determination of relative dielectric constant and dielectric loss tangent]

<二氧化矽粒子> <Silicon dioxide particles>

使用利用共振腔微擾法的關東電子應用開發公司製造的介電常數測定裝置,測定規定頻率下的二氧化矽粒子的相對介電常數(ε1)及介電損耗角正切(Tanδ1)。再者,試樣管的內徑為1.68mm,外徑為2.28mm,高度為8cm。 The relative dielectric constant (ε 1 ) and dielectric loss tangent (Tan δ 1 ) of silicon dioxide particles at a specified frequency were measured using a dielectric constant measurement device manufactured by Kanto Electronics Application Development Co., Ltd., which utilizes the cavity perturbation method. The sample tube had an inner diameter of 1.68 mm, an outer diameter of 2.28 mm, and a height of 8 cm.

<樹脂膜> <Resin film>

使用向量網路分析儀(vector network analyzer)(安捷倫(Agilent)公司製造,商品名:向量網路分析儀E8363C)及SPDR共振器,測定規定頻率下的樹脂膜(硬化後的樹脂膜)的相對介電常數(ε1)及介電損耗角正切(Tanδ1)。再者,測定中使用的樹脂膜是在溫度:24℃~26℃、濕度:45%~55%的條件下放置24小時。 The relative dielectric constant (ε 1 ) and dielectric loss tangent (Tan δ 1 ) of the resin film (after curing) were measured at a specified frequency using a vector network analyzer (Agilent E8363C ) and SPDR resonator. The resin film was stored at a temperature of 24°C to 26°C and a humidity of 45% to 55 % for 24 hours.

[黏度的測定] [Viscosity measurement]

樹脂溶液的黏度是使用E型黏度計(布魯克菲爾德(Brookfield)公司製造,商品名:DV-II+Pro),測定25℃下的黏度。以轉矩為10%~90%的方式設定轉速,開始測定後經過2分鐘後,讀取黏度穩定時的值。 The viscosity of the resin solution was measured at 25°C using an E-type viscometer (Brookfield, trade name: DV-II+Pro). The rotational speed was set to a torque range of 10% to 90%. The viscosity was read after 2 minutes from the start of the measurement, when the viscosity stabilized.

[熱膨脹係數(CTE)的測定] [Determination of Coefficient of Thermal Expansion (CTE)]

對於3mm×20mm尺寸的聚醯亞胺膜,使用熱機械分析儀(布魯克(Bruker)公司製造,商品名:4000SA),在施加5.0g負荷的同時以10℃/min的升溫速度自30℃升溫至250℃,進而在所述溫度下保持10分鐘後,以5℃/min的速度冷卻,求出自250℃至100℃為止的平均熱膨脹係數(熱膨脹係數,CTE)。 A 3 mm x 20 mm polyimide film was heated from 30°C to 250°C at a rate of 10°C/min using a thermomechanical analyzer (Bruker 4000SA) under a load of 5.0 g. The film was then held at this temperature for 10 minutes and then cooled at a rate of 5°C/min. The average coefficient of thermal expansion (CTE) from 250°C to 100°C was determined.

[彎折性的評價] [Flexibility Evaluation]

1)180°彎折性: 1) 180° flexing:

依據JISK5600-1,將5cm×10cm尺寸的樹脂膜的長邊的中心以捲繞在5mmΦ的金屬棒上的方式花費1秒~2秒均勻地彎曲,將樹脂膜即便180°彎折也不會出現斷裂或裂紋者設為“良”,產生斷裂或裂紋者設為“不可”。 According to JIS K5600-1, a 5cm x 10cm resin film is wrapped around a 5mm diameter metal rod at the center of its long side and bent uniformly for 1 to 2 seconds. Films that show no breakage or cracking even after a 180° bend are rated "good," while those that do breakage or cracking are rated "unacceptable."

2)折疊性: 2) Folding:

將5cm×5cm尺寸的樹脂膜沿對角線折疊成三角後,恢復原狀,將樹脂膜未出現斷裂或裂紋者設為“可”,將產生斷裂或裂紋者設為“不可”。 A 5cm x 5cm resin film was folded diagonally into a triangle and then restored to its original shape. Those with no breaks or cracks were rated "acceptable" and those with breaks or cracks were rated "unacceptable."

實施例等中使用的略號表示以下的化合物。 The abbreviations used in the examples represent the following compounds.

m-TB:2,2'-二甲基-4,4'-二胺基聯苯 m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl

TPE-R:1,3-雙(4-胺基苯氧基)苯 TPE-R: 1,3-Bis(4-aminophenoxy)benzene

BAPP:2,2-雙[4-(4-胺基苯氧基)苯基]丙烷 BAPP: 2,2-Bis[4-(4-aminophenoxy)phenyl]propane

TFMB:2,2'-雙(三氟甲基)-4,4'-二胺基聯苯 TFMB: 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl

PMDA:均苯四甲酸二酐 PMDA: Pyromellitic Dianhydride

BPDA:3,3',4,4'-聯苯四羧酸二酐 BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

6FDA:2,2-雙(3,4-二羧基苯基)-六氟丙烷二酐 6FDA: 2,2-bis(3,4-dicarboxyphenyl)-hexafluoropropane dianhydride

DMAc:N,N-二甲基乙醯胺 DMAc: N,N-dimethylacetamide

填料1:日鐵化學&材料公司製造、商品名:SP40-10(球狀非晶質二氧化矽粉末、圓球狀、二氧化矽含有率:99.9重量%、真比重:2.21、比表面積:8.6m2/g、D50:2.5μm、D100:30μm) Filler 1: Nippon Steel Chemicals & Materials Co., Ltd., trade name: SP40-10 (spherical amorphous silica powder, spherical shape, silica content: 99.9% by weight, true specific gravity: 2.21, specific surface area: 8.6 m 2 /g, D 50 : 2.5 μm, D 100 : 30 μm)

填料2:日鐵化學&材料公司製造、商品名:SPH507(球狀非晶質二氧化矽粉末、圓球狀、二氧化矽含有率:99.99重量%、真比重:2.21、比表面積:6.4m2/g、D50:0.83μm、D100:8.7μm) Filler 2: Nippon Steel Chemicals & Materials Co., Ltd., trade name: SPH507 (spherical amorphous silica powder, spherical shape, silica content: 99.99% by weight, true specific gravity: 2.21, specific surface area: 6.4 m 2 /g, D 50 : 0.83 μm, D 100 : 8.7 μm)

填料3:日鐵化學&材料公司製造、商品名:SPH516M(球狀非晶質二氧化矽粉末、圓球狀、二氧化矽含有率:99.98重量%、真比重:2.21、比表面積:12.7m2/g、D50:0.64μm、D100:1.3μm) Filler 3: Nippon Steel Chemicals & Materials Co., Ltd., trade name: SPH516M (spherical amorphous silica powder, spherical shape, silica content: 99.98% by weight, true specific gravity: 2.21, specific surface area: 12.7 m 2 /g, D 50 : 0.64 μm, D 100 : 1.3 μm)

填料4:阿德瑪科技(Admatech)公司製造、商品名:SE4050(球狀非晶質二氧化矽粉末、圓球狀、二氧化矽含有率:99.99重量%、真比重:2.2、比表面積:4.6m2/g、D50:1.5μm、D100:6.0μm) Filler 4: Admatech, trade name: SE4050 (spherical amorphous silica powder, spherical shape, silica content: 99.99% by weight, true specific gravity: 2.2, specific surface area: 4.6 m 2 /g, D 50 : 1.5 μm, D 100 : 6.0 μm)

填料1~填料4的相對介電常數及介電損耗角正切如下。 The relative dielectric constant and dielectric loss tangent of fillers 1 to 4 are as follows.

<填料1> <Padding 1>

1)3GHz下的相對介電常數ε1:3.05、介電損耗角正切Tanδ1:0.0028 1) Relative dielectric constant ε 1 at 3 GHz: 3.05, dielectric loss tangent Tanδ 1 : 0.0028

2)5GHz下的相對介電常數ε1:2.97、介電損耗角正切Tanδ1:0.0028 2) Relative dielectric constant ε 1 at 5 GHz: 2.97, dielectric loss tangent Tanδ 1 : 0.0028

3)10GHz下的相對介電常數ε1:2.78、介電損耗角正切Tanδ1:0.003 3) Relative dielectric constant ε 1 at 10 GHz: 2.78, dielectric loss tangent Tanδ 1 : 0.003

<填料2> <Padding 2>

1)3GHz下的相對介電常數ε1:2.98、介電損耗角正切Tanδ1:0.0025 1) Relative dielectric constant ε 1 at 3 GHz: 2.98, dielectric loss tangent Tanδ 1 : 0.0025

2)5GHz下的相對介電常數ε1:2.99、介電損耗角正切Tanδ1:0.0026 2) Relative dielectric constant ε 1 at 5 GHz: 2.99, dielectric loss tangent Tanδ 1 : 0.0026

3)10GHz下的相對介電常數ε1:2.88、介電損耗角正切Tanδ1:0.0027 3) Relative dielectric constant ε 1 at 10 GHz: 2.88, dielectric loss tangent Tanδ 1 : 0.0027

<填料3> <Padding 3>

1)3GHz下的相對介電常數ε1:2.88、介電損耗角正切Tanδ1:0.004 1) Relative dielectric constant ε 1 at 3 GHz: 2.88, dielectric loss tangent Tanδ 1 : 0.004

2)5GHz下的相對介電常數ε1:2.82、介電損耗角正切Tanδ1:0.0039 2) Relative dielectric constant ε 1 at 5 GHz: 2.82, dielectric loss tangent Tanδ 1 : 0.0039

3)10GHz下的相對介電常數ε1:2.76、介電損耗角正切Tanδ1:0.004 3) Relative dielectric constant ε 1 at 10 GHz: 2.76, dielectric loss tangent Tanδ 1 : 0.004

<填料4> <Padding 4>

1)3GHz下的相對介電常數ε1:3.10、介電損耗角正切Tanδ1:0.0049 1) Relative dielectric constant ε 1 at 3 GHz: 3.10, dielectric loss tangent Tanδ 1 : 0.0049

2)5GHz下的相對介電常數ε1:3.06、介電損耗角正切Tanδ1:0.0049 2) Relative dielectric constant ε 1 at 5 GHz: 3.06, dielectric loss tangent Tanδ 1 : 0.0049

3)10GHz下的相對介電常數ε1:2.92、介電損耗角正切Tanδ1:0.0052 3) Relative dielectric constant ε 1 at 10 GHz: 2.92, dielectric loss tangent Tanδ 1 : 0.0052

(合成例1~合成例4) (Synthesis Example 1 to Synthesis Example 4)

為了合成聚醯胺酸的溶液A~溶液D,在氮氣流下在3000ml的可分離式燒瓶中,以成為表1所示的固體成分濃度的方式加入溶劑的DMAc,攪拌表1所示的二胺成分及酸酐成分10分鐘的同時在室溫下加以溶解。之後,將溶液在室溫下持續攪拌10小時並進行聚合反應,從而製備聚醯胺酸的黏稠的溶液A~溶液D。 To synthesize polyamine solutions A through D, DMAc was added to a 3000 ml separable flask under a nitrogen flow to achieve the solid concentrations shown in Table 1. The diamine and anhydride components listed in Table 1 were then stirred and dissolved at room temperature for 10 minutes. The solutions were then stirred at room temperature for 10 hours to allow polymerization to proceed, resulting in viscous polyamine solutions A through D.

[實施例1] [Example 1]

混合100.24g的聚醯胺酸溶液A及9.37g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液1(黏度:27,500cps,填料相對於聚醯胺酸的含有率:30體積%)。 Mix 100.24 g of polyamine solution A and 9.37 g of filler 1 and stir until the solution becomes visually homogeneous to prepare polyamine solution 1 (viscosity: 27,500 cps, filler content relative to polyamine: 30% by volume).

將聚醯胺酸溶液1塗佈在銅箔1(電解銅箔,厚度:12μm)上,在130℃下乾燥3分鐘。之後,自155℃至360℃進行階段性熱處理並進行醯亞胺化,從而製備覆金屬層疊板1。 A polyamide solution 1 was applied to a copper foil 1 (electrolytic copper foil, thickness: 12 μm) and dried at 130°C for 3 minutes. It was then subjected to a stepwise heat treatment from 155°C to 360°C for imidization, thereby preparing a metal-clad laminate 1.

蝕刻去除覆金屬層疊板1的銅箔,製備樹脂膜1。樹脂膜1(厚度:40μm)的CTE為33ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜1的介電損耗角正切如下。 The copper foil covering the metal laminate 1 was etched away to prepare a resin film 1. The CTE of the resin film 1 (thickness: 40 μm) was 33 ppm/K, with good 180° bending properties and acceptable folding properties. The dielectric loss tangent of the resin film 1 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0047 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0047

2)10GHz下的介電損耗角正切Tanδ1:0.0054 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0054

3)20GHz下的介電損耗角正切Tanδ1:0.0056 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0056

[實施例2] [Example 2]

混合100.36g的聚醯胺酸溶液A及21.88g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液2(黏度:28,400cps,填料相對於聚醯胺酸的含有率:50體積%)。 Mix 100.36 g of polyamine solution A and 21.88 g of filler 1 and stir until the solution becomes visually homogeneous to prepare polyamine solution 2 (viscosity: 28,400 cps, filler content relative to polyamine: 50% by volume).

與實施例1同樣地,製備覆金屬層疊板2及樹脂膜2。樹脂膜2(厚度:42μm)的CTE為31ppm/K,180°彎折性為良,折疊性為不可。另外,樹脂膜2的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 2 and a resin film 2 were prepared. The CTE of the resin film 2 (thickness: 42 μm) was 31 ppm/K, its 180° bending performance was good, and its folding performance was poor. Furthermore, the dielectric loss tangent of the resin film 2 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0043 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0043

2)10GHz下的介電損耗角正切Tanδ1:0.0047 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0047

3)20GHz下的介電損耗角正切Tanδ1:0.0049 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0049

[實施例3] [Example 3]

混合99.92g的聚醯胺酸溶液B及9.33g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液3(黏度:29,000cps,填料相對於聚醯胺酸的含有率:30體積%)。 Mix 99.92 g of polyamine solution B and 9.33 g of filler 1 and stir until the solution becomes visually homogeneous to prepare polyamine solution 3 (viscosity: 29,000 cps, filler content relative to polyamine: 30% by volume).

與實施例1同樣地,製備覆金屬層疊板3及樹脂膜3。樹脂膜3(厚度:41μm)的CTE為35ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜3的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 3 and a resin film 3 were prepared. The CTE of the resin film 3 (thickness: 41 μm) was 35 ppm/K, its 180° bending properties were good, and its folding properties were acceptable. Furthermore, the dielectric loss tangent of the resin film 3 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0029 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0029

2)10GHz下的介電損耗角正切Tanδ1:0.0033 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0033

3)20GHz下的介電損耗角正切Tanδ1:0.0035 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0035

[實施例4] [Example 4]

混合100.00g的聚醯胺酸溶液B及21.81g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液4(黏度:31,000 cps,填料相對於聚醯胺酸的含有率:50體積%)。 Mix 100.00 g of polyamine solution B and 21.81 g of filler 1 and stir until the solution becomes visually homogeneous to prepare polyamine solution 4 (viscosity: 31,000 cps, filler content relative to polyamine: 50% by volume).

與實施例1同樣地,製備覆金屬層疊板4及樹脂膜4。樹脂膜4(厚度:44μm)的CTE為30ppm/K,180°彎折性為良,折疊性為不可。另外,樹脂膜4的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 4 and a resin film 4 were prepared. The CTE of the resin film 4 (thickness: 44 μm) was 30 ppm/K, its 180° bending performance was good, and its folding performance was poor. Furthermore, the dielectric loss tangent of the resin film 4 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0028 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0028

2)10GHz下的介電損耗角正切Tanδ1:0.0030 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0030

3)20GHz下的介電損耗角正切Tanδ1:0.0031 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0031

[實施例5] [Example 5]

混合80.00g的聚醯胺酸溶液C及7.88g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液5(黏度:24,000cps,填料相對於聚醯胺酸的含有率:30體積%)。 80.00 g of polyamine solution C and 7.88 g of filler 1 were mixed and stirred until the solution became uniform visually. This prepared polyamine solution 5 (viscosity: 24,000 cps, filler content relative to polyamine: 30% by volume).

與實施例1同樣地,製備覆金屬層疊板5及樹脂膜5。樹脂膜5(厚度:46μm)的CTE為41ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜5的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 5 and a resin film 5 were prepared. The CTE of the resin film 5 (thickness: 46 μm) was 41 ppm/K, its 180° bending properties were good, and its folding properties were acceptable. Furthermore, the dielectric loss tangent of the resin film 5 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0046 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0046

2)10GHz下的介電損耗角正切Tanδ1:0.0052 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0052

3)20GHz下的介電損耗角正切Tanδ1:0.0055 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0055

[實施例6] [Example 6]

混合80.00g的聚醯胺酸溶液D及7.92g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液6(黏度:23,000cps,填料相對於聚醯胺酸的含有率:30體積%)。 80.00 g of polyamine solution D and 7.92 g of filler 1 were mixed and stirred until the solution became visually homogeneous, thereby preparing polyamine solution 6 (viscosity: 23,000 cps, filler content relative to polyamine: 30% by volume).

與實施例1同樣地,製備覆金屬層疊板6及樹脂膜6。樹脂 膜6(厚度:45μm)的CTE為46ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜6的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 6 and a resin film 6 were prepared. The CTE of the resin film 6 (thickness: 45 μm) was 46 ppm/K, with good 180° bending properties and acceptable folding properties. The dielectric loss tangent of the resin film 6 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0046 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0046

2)10GHz下的介電損耗角正切Tanδ1:0.0052 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0052

3)20GHz下的介電損耗角正切Tanδ1:0.0055 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0055

[實施例7] [Example 7]

混合80.00g的聚醯胺酸溶液D及18.49g的填料1,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液7(黏度:31,000cps,填料相對於聚醯胺酸的含有率:50體積%)。 80.00 g of polyamine solution D and 18.49 g of filler 1 were mixed and stirred until the solution became uniform visually. This prepared polyamine solution 7 (viscosity: 31,000 cps, filler content relative to polyamine: 50% by volume).

與實施例1同樣地,製備覆金屬層疊板7及樹脂膜7。樹脂膜7(厚度:48μm)的CTE為28ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜7的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 7 and a resin film 7 were prepared. The CTE of the resin film 7 (thickness: 48 μm) was 28 ppm/K, its 180° bending properties were good, and its folding properties were acceptable. Furthermore, the dielectric loss tangent of the resin film 7 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0051 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0051

2)10GHz下的介電損耗角正切Tanδ1:0.0054 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0054

3)20GHz下的介電損耗角正切Tanδ1:0.0055 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0055

(比較例1) (Comparative example 1)

在銅箔1上塗佈聚醯胺酸溶液A,在130℃下乾燥3分鐘。之後,自155℃至360℃為止進行階段性熱處理並加以醯亞胺化,從而製備覆金屬層疊板8。 Polyamide solution A is coated on copper foil 1 and dried at 130°C for 3 minutes. It is then subjected to a stepwise heat treatment from 155°C to 360°C for imidization, thereby preparing a metal-clad laminate 8.

與實施例1同樣地,製備覆金屬層疊板8及樹脂膜8。樹脂膜8(厚度:42μm)的CTE為17ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜8的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 8 and a resin film 8 were prepared. The CTE of the resin film 8 (thickness: 42 μm) was 17 ppm/K, its 180° bending properties were good, and its folding properties were acceptable. Furthermore, the dielectric loss tangent of the resin film 8 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0052 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0052

2)10GHz下的介電損耗角正切Tanδ1:0.0062 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0062

3)20GHz下的介電損耗角正切Tanδ1:0.0065 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0065

(比較例2) (Comparative example 2)

在銅箔1上塗佈聚醯胺酸溶液B,在130℃下乾燥3分鐘。之後,自155℃至360℃為止進行階段性熱處理並加以醯亞胺化,從而製備覆金屬層疊板9。 Copper foil 1 is coated with polyamide solution B and dried at 130°C for 3 minutes. It is then subjected to a stepwise heat treatment from 155°C to 360°C for imidization, thereby preparing a metal-clad laminate 9.

與實施例1同樣地,製備覆金屬層疊板9及樹脂膜9。樹脂膜9(厚度:43μm)的CTE為18ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜9的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 9 and a resin film 9 were prepared. The CTE of the resin film 9 (thickness: 43 μm) was 18 ppm/K, its 180° bending properties were good, and its folding properties were acceptable. Furthermore, the dielectric loss tangent of the resin film 9 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0032 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0032

2)10GHz下的介電損耗角正切Tanδ1:0.0037 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0037

3)20GHz下的介電損耗角正切Tanδ1:0.0040 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0040

(比較例3) (Comparative example 3)

在銅箔1上塗佈聚醯胺酸溶液C,在130℃下乾燥3分鐘。之後,自155℃至360℃為止進行階段性熱處理並加以醯亞胺化,從而製備覆金屬層疊板10。 Polyamide solution C is coated on copper foil 1 and dried at 130°C for 3 minutes. It is then subjected to a stepwise heat treatment from 155°C to 360°C for imidization, thereby preparing a metal-clad laminate 10.

與實施例1同樣地,製備覆金屬層疊板10及樹脂膜10。樹脂膜10(厚度:41μm)的CTE為51ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜10的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 10 and a resin film 10 were prepared. The resin film 10 (thickness: 41 μm) had a CTE of 51 ppm/K, good 180° bending properties, and acceptable folding properties. Furthermore, the dielectric loss tangent of the resin film 10 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0055 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0055

2)10GHz下的介電損耗角正切Tanδ1:0.0062 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0062

3)20GHz下的介電損耗角正切Tanδ1:0.0068 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0068

(比較例4) (Comparative example 4)

在銅箔1上塗佈聚醯胺酸溶液D,在130℃下乾燥3分鐘。之後,自155℃至360℃為止進行階段性熱處理並加以醯亞胺化,從而製備覆金屬層疊板11。 A polyamide solution D is coated on a copper foil 1 and dried at 130°C for 3 minutes. It is then subjected to a stepwise heat treatment from 155°C to 360°C for imidization, thereby preparing a metal-clad laminate 11.

與實施例1同樣地,製備覆金屬層疊板11及樹脂膜11。樹脂膜11(厚度:42μm)的CTE為71ppm/K,180°彎折性為良,折疊性為可。另外,樹脂膜11的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 11 and a resin film 11 were prepared. The CTE of the resin film 11 (thickness: 42 μm) was 71 ppm/K, its 180° bending properties were good, and its folding properties were acceptable. Furthermore, the dielectric loss tangent of the resin film 11 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0069 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0069

2)10GHz下的介電損耗角正切Tanδ1:0.0077 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0077

3)20GHz下的介電損耗角正切Tanδ1:0.0079 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0079

[比較例5] [Comparative example 5]

混合100.24g的聚醯胺酸溶液A及9.37g的填料4,攪拌至目視成為同樣的溶液為止,從而製備聚醯胺酸溶液12(黏度:28,000cps,填料相對於聚醯胺酸的含有率:30體積%)。 100.24 g of polyamine solution A and 9.37 g of filler 4 were mixed and stirred until the solution became visually homogeneous, thereby preparing polyamine solution 12 (viscosity: 28,000 cps, filler content relative to polyamine: 30% by volume).

與實施例1同樣地,製備覆金屬層疊板12及樹脂膜12。樹脂膜12(厚度:44μm)的CTE為34ppm/K,180°彎折性及折疊性均為不可。另外,樹脂膜12的介電損耗角正切如下。 Similar to Example 1, a metal-clad laminate 12 and a resin film 12 were prepared. The CTE of the resin film 12 (thickness: 44 μm) was 34 ppm/K, and neither 180° bendability nor foldability was acceptable. Furthermore, the dielectric loss tangent of the resin film 12 was as follows.

1)5GHz下的介電損耗角正切Tanδ1:0.0051 1) Dielectric loss tangent Tanδ 1 at 5GHz: 0.0051

2)10GHz下的介電損耗角正切Tanδ1:0.0054 2) Dielectric loss tangent Tanδ 1 at 10 GHz: 0.0054

3)20GHz下的介電損耗角正切Tanδ1:0.0055 3) Dielectric loss tangent Tanδ 1 at 20 GHz: 0.0055

以上,出於例示的目的詳細地說明了本發明的實施方式,但 本發明並不受所述實施方式的制約,能夠進行各種變形。 While the embodiments of the present invention have been described in detail above for illustrative purposes, the present invention is not limited to these embodiments and is capable of various modifications.

Claims (4)

一種樹脂組成物,含有二氧化矽粒子、與聚醯胺酸或聚醯亞胺,所述樹脂組成物的特徵在於:所述二氧化矽粒子具有以下特性:用於3GHz~20GHz的頻率範圍中,藉由利用雷射繞射散射法的體積基準的粒度分佈測定而獲得的頻度分佈曲線中的累計值成為50%的平均粒徑D50為0.64μm~2.5μm的範圍內,比表面積為6.4m2/g以上且為12.7m2/g以下的範圍內,利用共振腔微擾法所測定的介電損耗角正切為0.004以下,平均長徑與平均短徑的比為1或接近1;相對於所述聚醯胺酸或聚醯亞胺,所述二氧化矽粒子的含量為30體積%~70體積%的範圍內。 A resin composition comprising silica particles and polyamide or polyimide, wherein the silica particles have the following characteristics: a frequency distribution curve obtained by volume-based particle size distribution measurement using a laser diffraction scattering method in a frequency range of 3 GHz to 20 GHz, a mean particle size D50 at which 50% of the cumulative value is within the range of 0.64 μm to 2.5 μm, and a specific surface area of 6.4 m2 /g or more and 12.7 m2 /g or less. /g or less, a dielectric loss tangent measured by a cavity perturbation method is less than 0.004, a ratio of an average major diameter to an average minor diameter is 1 or close to 1; and a content of the silicon dioxide particles is in a range of 30 volume % to 70 volume % relative to the polyamide or polyimide. 一種樹脂膜,具有單層或多層聚醯亞胺層,所述樹脂膜的特徵在於:所述聚醯亞胺層的至少一層是包含如請求項1所述的樹脂組成物的硬化物的含二氧化矽的聚醯亞胺層,所述含二氧化矽的聚醯亞胺層的厚度為10μm~200μm的範圍內,其中所述樹脂膜整體的厚度為10μm~200μm的範圍內。 A resin film having a single or multiple polyimide layers, wherein at least one of the polyimide layers is a silicon dioxide-containing polyimide layer comprising a cured product of the resin composition according to claim 1, the silicon dioxide-containing polyimide layer having a thickness in the range of 10 μm to 200 μm, and the overall thickness of the resin film in the range of 10 μm to 200 μm. 如請求項2所述的樹脂膜,其中所述含二氧化矽的聚醯亞胺層的厚度的比例為50%以上。 The resin film according to claim 2, wherein the thickness ratio of the silicon dioxide-containing polyimide layer is 50% or more. 一種覆金屬層疊板,包括絕緣樹脂層、與層疊於所述絕緣樹脂層的至少一個面上的金屬層,所述覆金屬層疊板的特徵在於: 所述絕緣樹脂層包含如請求項2或3所述的樹脂膜。 A metal-clad laminate comprising an insulating resin layer and a metal layer laminated on at least one surface of the insulating resin layer, wherein: The insulating resin layer comprises the resin film according to claim 2 or 3.
TW109137478A 2019-10-29 2020-10-28 Silicon dioxide particles, resin composition, resin film and metal-clad laminate TWI893017B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019196674A JP7529392B2 (en) 2019-10-29 2019-10-29 Silica particles, resin composition, resin film and metal-clad laminate
JP2019-196674 2019-10-29

Publications (2)

Publication Number Publication Date
TW202124280A TW202124280A (en) 2021-07-01
TWI893017B true TWI893017B (en) 2025-08-11

Family

ID=75648786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109137478A TWI893017B (en) 2019-10-29 2020-10-28 Silicon dioxide particles, resin composition, resin film and metal-clad laminate

Country Status (4)

Country Link
JP (1) JP7529392B2 (en)
KR (1) KR20210052282A (en)
CN (2) CN112745529A (en)
TW (1) TWI893017B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240254313A1 (en) * 2021-05-13 2024-08-01 Denka Company Limited Silica powder in which aggregation is reduced, resin composition, and semiconductor sealing material
CN117730054A (en) * 2021-07-28 2024-03-19 Agc株式会社 Spherical silica powder and method for producing spherical silica powder
WO2023140378A1 (en) * 2022-01-21 2023-07-27 花王株式会社 Method for producing hollow silica particles
CN114702038B (en) 2022-04-25 2023-09-29 江苏联瑞新材料股份有限公司 Preparation method of ultra-low dielectric loss spherical silica powder

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471590A (en) * 2009-07-14 2012-05-23 花王株式会社 Low Dielectric Resin Composition
CN109071778A (en) * 2016-12-07 2018-12-21 日立化成株式会社 Thermosetting resin composition, method for producing same, prepreg, laminate, and printed wiring board

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3660501B2 (en) 1998-05-28 2005-06-15 日立建機株式会社 Engine speed control device for construction machinery
JP2011225756A (en) * 2010-04-21 2011-11-10 Kao Corp Low dielectric resin composition
JP5438407B2 (en) * 2009-07-14 2014-03-12 花王株式会社 Low dielectric resin composition
JP5513364B2 (en) * 2010-12-24 2014-06-04 花王株式会社 Hollow silica particles
JP6063195B2 (en) * 2012-09-28 2017-01-18 株式会社カネカ Black polyimide film
JP6756108B2 (en) * 2015-01-13 2020-09-16 日立化成株式会社 Resin film, resin film with support, prepreg, metal-clad laminate and multi-layer printed wiring board
WO2016114030A1 (en) * 2015-01-16 2016-07-21 日立化成株式会社 Thermosetting resin composition, resin film for interlayer insulation, composite film, printed wiring board, and method for producing same
JP2018012747A (en) 2016-07-19 2018-01-25 日立化成株式会社 Thermosetting resin composition, interlayer-insulating resin film, composite film, printed wiring board, and production methods thereof
US20200058577A1 (en) * 2017-02-22 2020-02-20 Namics Corporation Multi-layer wiring substrate and semiconductor device
JP7114983B2 (en) * 2017-03-29 2022-08-09 荒川化学工業株式会社 Adhesives, film-like adhesives, adhesive layers, adhesive sheets, resin-coated copper foils, copper-clad laminates, printed wiring boards, multilayer wiring boards, and methods for producing the same
JP6927823B2 (en) * 2017-09-21 2021-09-01 芝浦メカトロニクス株式会社 Manufacturing method of electronic component mounting device and display member
MY200914A (en) * 2017-10-10 2024-01-23 Mitsui Mining & Smelting Co Ltd Resin composition for printed wiring board, copper foil with resin, copper-clad laminate board, and printed wiring board
JP6766087B2 (en) * 2018-03-23 2020-10-07 株式会社タムラ製作所 Method for manufacturing thermosetting flux composition and electronic substrate
JP2019178304A (en) * 2018-03-30 2019-10-17 太陽インキ製造株式会社 Curable resin composition, dry film, cured product and printed wiring board
JP6564517B1 (en) * 2018-12-17 2019-08-21 株式会社アドマテックス Filler for electronic material and method for producing the same, method for producing resin composition for electronic material, high-frequency substrate, and slurry for electronic material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471590A (en) * 2009-07-14 2012-05-23 花王株式会社 Low Dielectric Resin Composition
CN109071778A (en) * 2016-12-07 2018-12-21 日立化成株式会社 Thermosetting resin composition, method for producing same, prepreg, laminate, and printed wiring board

Also Published As

Publication number Publication date
TW202124280A (en) 2021-07-01
CN112745529A (en) 2021-05-04
JP2021070592A (en) 2021-05-06
KR20210052282A (en) 2021-05-10
CN118271841A (en) 2024-07-02
JP7529392B2 (en) 2024-08-06

Similar Documents

Publication Publication Date Title
CN103958188B (en) Flexible metal laminate containing fluorinated polymer
TWI495562B (en) Flexible metal laminate
TWI682019B (en) Multilayer adhesive film and flexible metal-clad laminate
TWI893017B (en) Silicon dioxide particles, resin composition, resin film and metal-clad laminate
JP5665846B2 (en) Thermally conductive polyimide film and thermal conductive laminate using the same
TWI876010B (en) Resin composition, method for producing the same, resin film and metal-clad laminate
TW201741369A (en) Polyimine resin precursor
JP6767759B2 (en) Polyimide, resin film and metal-clad laminate
TWI859355B (en) Resin film and metal-clad laminate
KR102239605B1 (en) Double-sided flexible metallic laminate and method thereof
JPWO2020022129A1 (en) Metal-clad laminate and circuit board
JP2023006387A (en) Polyamide acid, polyimide, polyimide film, metal-clad laminate and circuit board
JP7441029B2 (en) Resin film and metal clad laminate
JP2024061741A (en) Manufacturing method of resin film and manufacturing method of metal-clad laminate
TWI856927B (en) Method for producing polyimide film, method for producing metal-clad laminate, and method for producing circuit substrate
KR20160088844A (en) Polyimide heat resistance adhesive having low dielectric constant and flexible laminated plate using the same
KR102920628B1 (en) Resin composition, resin film and metal clad laminate
JP7648377B2 (en) Polyamic acid composition, polyimide composition, metal-clad laminate and circuit board
WO2007083527A1 (en) Polyimide film and method for production thereof
JP2023042337A (en) Silica filler containing polyimide film, multilayer polyimide film, flexible metal-clad laminate, and flexible printed circuit board