TWI892421B - Pumping controller for a plurality of charge pump units - Google Patents
Pumping controller for a plurality of charge pump unitsInfo
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- TWI892421B TWI892421B TW113102362A TW113102362A TWI892421B TW I892421 B TWI892421 B TW I892421B TW 113102362 A TW113102362 A TW 113102362A TW 113102362 A TW113102362 A TW 113102362A TW I892421 B TWI892421 B TW I892421B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Abstract
Description
[優先權請求][Priority Request]
本申請案請求2023年2月2日提交之標題為「包含基於閂鎖器的自振盪電壓調節器之電荷泵」的美國臨時專利申請案第63/442,807號及2023年4月17日提交之標題為「用於複數個電荷泵單元的泵送控制器」的美國專利申請案第18/135,395號之優先權。This application claims priority to U.S. Provisional Patent Application No. 63/442,807, filed on February 2, 2023, entitled “CHARGE PUMP INCLUDING A SELF-OSCILLATING VOLTAGE REGULATOR BASED ON A LATTICE,” and U.S. Patent Application No. 18/135,395, filed on April 17, 2023, entitled “PUMPING CONTROLLER FOR A PLURALITY OF CHARGE PUMP UNITS.”
揭露一種用於提供泵送信號至複數個電荷泵單元的泵送控制器。A pumping controller for providing a pumping signal to a plurality of charge pump units is disclosed.
電荷泵通常用在半導體裝置中以產生大於可用電源電壓的電壓,而可用電源電壓通常以VDD表示。例如,在快閃記憶體系統中使用電荷泵以產生大於VDD 的電壓以進行程式化、抹除或讀取操作。Charge pumps are commonly used in semiconductor devices to generate voltages greater than the available supply voltage, which is typically denoted by VDD. For example, charge pumps are used in flash memory systems to generate voltages greater than VDD for programming, erasing, or reading operations.
習知技藝包括具有並聯操作的多個電荷泵單元的設計。這些習知技藝設計中的一個限制是,因為每個電荷泵單元係根據共同的泵送信號同時開始其充電及放電操作,導致在每個充電週期開始時出現電力突湧,這會損壞對電流或電壓中之突湧為敏感的電路。習知技藝設計的另一個缺點是,如果電荷泵達到期望的電壓位準,充電操作有時會在停止之前持續一段時間,這導致其輸出高於期望的位準。Conventional designs include multiple charge pump units operating in parallel. One limitation of these conventional designs is that, because each charge pump unit simultaneously initiates its charge and discharge operations based on a common pumping signal, a power surge occurs at the beginning of each charge cycle, which can damage circuits sensitive to surges in current or voltage. Another drawback of conventional designs is that, if the charge pump reaches the desired voltage level, charging can sometimes continue for a period of time before stopping, causing its output to be higher than desired.
所需要的是一種改進的電荷泵設計及控制系統。What is needed is an improved charge pump design and control system.
揭露一種用於複數個電荷泵的泵送控制器。A pumping controller for a plurality of charge pumps is disclosed.
圖1描繪包括電壓調節器100的系統。電壓調節器100包括電荷泵單元102-1、102-2、102-3及102-4。電荷泵單元102-1、102-2、102-3及102-4被並聯連接,且每一者皆接收輸入電壓VDD並產生大於輸入電壓的輸出電壓VD25。在此實例中,四個電荷泵單元被並聯連接以提供輸出電壓VD25,以便能夠在沒有下降的情況下供電予所附接的負載。FIG1 illustrates a system including a voltage regulator 100. Voltage regulator 100 includes charge pump cells 102-1, 102-2, 102-3, and 102-4. Charge pump cells 102-1, 102-2, 102-3, and 102-4 are connected in parallel, and each receives an input voltage VDD and generates an output voltage VD25 that is greater than the input voltage. In this example, four charge pump cells are connected in parallel to provide an output voltage VD25 sufficient to power an attached load without voltage droop.
電壓調節器100進一步包括泵送控制器101。泵送控制器101包括具有第一電阻器103及第二電阻器104的一分壓器,該分壓器在節點113處產生與輸出電壓VD25成比例關係的分壓V S。比較器106接收了在第一非反相輸入上的分壓V S及第二反相輸入上的參考電壓VREF,並將它們進行比較。當V S> VREF時,比較器106之輸出VDET為高位準,而當V S<VREF時,比較器106之輸出則為低位準。電容器105將漣波從VD25轉換成V S,以加速比較器106。 Voltage regulator 100 further includes a pumping controller 101. Pumping controller 101 includes a voltage divider having a first resistor 103 and a second resistor 104. This voltage divider generates a divided voltage VS at node 113 that is proportional to output voltage VD25. Comparator 106 receives and compares the divided voltage VS at its first non-inverting input and a reference voltage VREF at its second inverting input. When VS > VREF, comparator 106 output VDET is high, and when VS < VREF, comparator 106 output is low. Capacitor 105 converts ripple from VD25 to VS , accelerating comparator 106.
閂鎖器107為具有重置信號的閘控D型閂鎖器,其係依據下列真值表來執行:
信號RESET由未圖示的其它邏輯電路或控制器提供在閂鎖器107之重置埠R上。閂鎖器107之閂鎖器啟動埠LAT接收來自比較器106的信號VDET。閂鎖器107之資料埠D接收來自反相器112的信號,以下將詳述如前揭真值表所示,當確立重置埠R上的RESET信號時,無論資料埠D及閂鎖器啟動埠LAT所接收的值如何,其輸出Q為0。當未確立重置埠R上的RESET信號,而係確立由閂鎖器啟動埠LAT所接收的信號(這發生在V S>VREF時,表示VD25已達到或超過期望的電壓)時,無論資料埠D隨後接收到的值如何,輸出Q會保持其位準。當未確立重置埠R上的RESET信號且未確立由閂鎖器啟動埠LAT所接收的信號(這發生在V S<VREF 時,表示VD25小於期望的電壓且需要額外的泵送)時,輸出Q會是當時由資料埠D所接收的任何值。 The RESET signal is provided by other logic circuits or controllers (not shown) to the reset port R of the latch 107. The latch enable port LAT of the latch 107 receives the signal VDET from the comparator 106. The data port D of the latch 107 receives the signal from the inverter 112, as will be described in detail below. As shown in the aforementioned truth table, when the RESET signal at the reset port R is asserted, its output Q is 0 regardless of the values received by the data port D and the latch enable port LAT. When the RESET signal on the reset port R is not asserted, but the signal received by the latch enable port LAT is asserted (this occurs when VS > VREF, indicating that VD25 has reached or exceeded the desired voltage), output Q maintains its level regardless of the value subsequently received by data port D. When the RESET signal on the reset port R is not asserted and the signal received by the latch enable port LAT is not asserted (this occurs when VS < VREF, indicating that VD25 is less than the desired voltage and requires additional pumping), output Q will be whatever value is received by data port D at that time.
輸出Q為信號PMP CLK,其係作為泵送信號而被提供至電荷泵單元102-1及延遲電路108之輸入。延遲電路108經歷其接收到的信號PMP CLK,但具有附加的延遲,以在延遲電路108之輸出處產生信號PMP CLK'。Output Q is signal PMP CLK, which is provided as a pumping signal to charge pump unit 102-1 and the input of delay circuit 108. Delay circuit 108 processes the received signal PMP CLK but adds a delay to generate signal PMP CLK′ at the output of delay circuit 108.
PMP CLK'係作為泵送信號而被提供至電荷泵單元102-2及延遲電路109之輸入。延遲電路109經歷其接收到的信號PMP CLK',但具有附加的延遲,以在延遲電路109之輸出處產生信號PMP CLK''。PMP CLK′ is provided as a pumping signal to the charge pump unit 102 - 2 and the input of the delay circuit 109 . The delay circuit 109 processes the received signal PMP CLK′ but adds a delay to generate the signal PMP CLK″ at the output of the delay circuit 109 .
PMP CLK''係作為泵送信號而被提供至電荷泵單元102-3及延遲電路110之輸入。延遲電路110經歷其接收到的信號PMP CLK'',但具有附加的延遲,以在延遲電路110之輸出處產生信號PMP CLK'''。PMP CLK″ is provided as a pumping signal to the charge pump unit 102 - 3 and the input of the delay circuit 110 . The delay circuit 110 processes the received signal PMP CLK″ but adds a delay to generate the signal PMP CLK″ at the output of the delay circuit 110 .
PMP CLK'''係作為泵送信號而被提供至電荷泵單元102-4及延遲電路111之輸入。延遲電路111經歷其接收到的信號PMP CLK''',但具有附加的延遲,以在延遲電路111之輸出處產生信號PMP CLK''''。在此實例中,電荷泵單元102-4係複數個(電荷)泵單元102中的最後一個(電荷)泵單元。PMP CLK''' is provided as a pumping signal to the inputs of charge pump cell 102-4 and delay circuit 111. Delay circuit 111 processes the received signal PMP CLK''' but adds an additional delay to generate signal PMP CLK'''' at the output of delay circuit 111. In this example, charge pump cell 102-4 is the last of the plurality of (charge) pump cells 102.
反相器112接收信號PMP CLK'''',並產生PMP CLK''''的反相,然後將其作為資料信號提供在閂鎖器107之資料埠D。The inverter 112 receives the signal PMP CLK'''' and generates an inverted version of PMP CLK'''', and then provides the inverted version as a data signal to the data port D of the latch 107.
最終結果是,當RESET為低位準且VDET為低位準時,泵送控制器產生一振盪的信號(PMP CLK),並且產生該振盪的信號之多個順序延遲的變型(PMP CLK'、PMP CLK''、PMP CLK'''及PMP CLK'''')。當VDET變成高位準時,PMP CLK穩定地保持在其現有值,並且停止了振盪的信號(PMP CLK)及該振盪的信號之該等順序延遲的變型(PMP CLK'、PMP CLK''、PMP CLK'''及PMP CLK'''')之振盪。The end result is that when RESET is low and VDET is low, the pumping controller generates an oscillating signal (PMP CLK) and generates multiple sequentially delayed versions of the oscillating signal (PMP CLK', PMP CLK'', PMP CLK''', and PMP CLK''''). When VDET goes high, PMP CLK remains stable at its current value, and the oscillation of the oscillating signal (PMP CLK) and the sequentially delayed versions of the oscillating signal (PMP CLK', PMP CLK'', PMP CLK''', and PMP CLK'''') ceases.
因此,可以理解,電壓調節器100包括:複數個電荷泵單元102,用於接收輸入電壓(VDD),並產生大於輸入電壓的輸出電壓(VD25);以及,泵送控制器101,用於提供泵送信號(PMP CLK)至複數個泵單元中之第一個泵單元(例如,電荷泵單元102-1),且提供泵送信號之各自的順序延遲的變型(PMP CLK'、PMP CLK''及PMP CLK''')至複數個泵單元中之其它泵單元(例如,電荷泵單元102-2、102-3及102-4)。Therefore, it can be understood that the voltage regulator 100 includes: a plurality of charge pump cells 102 for receiving an input voltage (VDD) and generating an output voltage (VD25) greater than the input voltage; and a pumping controller 101 for providing a pumping signal (PMP CLK) to a first pump cell (e.g., charge pump cell 102-1) of the plurality of pump cells, and providing respective sequentially delayed variations of the pumping signal (PMP CLK′, PMP CLK″, and PMP CLK′″) to the other pump cells (e.g., charge pump cells 102-2, 102-3, and 102-4) of the plurality of pump cells.
儘管在此實例中之電壓調節器100包括四個泵單元102,但是應該理解,電壓調節器100可替換地包括少於四個泵單元102或多於四個泵單元102。Although the voltage regulator 100 in this example includes four pump units 102 , it should be understood that the voltage regulator 100 may alternatively include fewer than four pump units 102 or more than four pump units 102 .
圖2描繪電壓調節器100之時序圖200,且顯示了信號PMP CLK、VD25及VDET。與一些習知技藝系統不同,輸出電壓VD25不會經歷會導致輸出電壓高於期望值的額外充電週期(與VD25所示的虛線形成對比,其係表明VD25如何在一些習知技藝系統中經歷電壓升高),其係起因於VDET被用作為對閂鎖器107的LAT輸入。也就是說,當VDET變成高位準時,閂鎖器107之輸出PMP CLK將保持在其當前狀態,且將停止振盪(與PMP CLK所示的虛線形成對比,其係表明PMP CLK在一些習知技藝系統中可能如何表現)。FIG2 depicts a timing diagram 200 of the voltage regulator 100 and shows the signals PMP CLK, VD25, and VDET. Unlike some prior art systems, the output voltage VD25 does not experience additional charge cycles that would cause the output voltage to be higher than expected (in contrast to the dashed line shown for VD25, which illustrates how VD25 experiences voltage increases in some prior art systems). This is due to VDET being used as the LAT input to the latch 107. That is, when VDET goes high, the output PMP CLK of latch 107 will remain in its current state and will stop oscillating (in contrast to the dashed line shown for PMP CLK, which illustrates how PMP CLK may behave in some prior art systems).
圖3描繪操作圖1及圖2之電壓調節器100的方法300。方法300包括藉由並聯連接的複數個電荷泵單元以接收輸入電壓(301);提供泵送信號至複數個電荷泵單元中之第一個電荷泵單元(302);提供泵送信號之多個順序延遲的變型至複數個電荷泵單元中之其它的電荷泵單元(303);以及,藉由複數個電荷泵單元以產生大於輸入電壓的輸出電壓(304)。FIG3 depicts a method 300 for operating the voltage regulator 100 of FIG1 and FIG2. The method 300 includes receiving an input voltage (301) through a plurality of charge pump cells connected in parallel; providing a pumping signal to a first charge pump cell of the plurality of charge pump cells (302); providing a plurality of sequentially delayed variations of the pumping signal to other charge pump cells of the plurality of charge pump cells (303); and generating an output voltage greater than the input voltage (304) through the plurality of charge pump cells.
圖4描繪方法400。方法400為方法300中之提供泵送信號至複數個電荷泵單元中之第一個電荷泵單元(302)及提供泵送信號之多個順序延遲的變型至複數個電荷泵單元中之其它的電荷泵單元(303)之執行方法的一個實例。方法400包括將與輸出電壓成比例關係的電壓與參考電壓進行比較,以產生比較器輸出(401);藉由具有重置埠的閘控D型閂鎖器以接收比較器輸出,以作為閂鎖器啟動信號(402);藉由閘控D型閂鎖器以接收在資料埠上的資料信號及在重置埠上的重置信號(403);藉由閘控D型閂鎖器以產生泵送信號,以作為輸出(404);藉由各自的延遲電路以產生泵送信號之多個順序延遲的變型(405);藉由反相器以接收包含有被提供至複數個電荷泵單元中之其它的電荷泵單元中之最後一個電荷泵單元的泵送信號之延遲的變型的輸入(406);藉由反相器以產生輸出(407);以及,將反相器之輸出作為資料信號提供至閂鎖器(408)。FIG4 depicts method 400. Method 400 is an example of a method for performing the steps of providing a pumping signal to a first charge pump unit (302) of a plurality of charge pump units and providing a plurality of sequentially delayed variations of the pumping signal to other charge pump units (303) of the plurality of charge pump units in method 300. The method 400 includes comparing a voltage proportional to an output voltage with a reference voltage to generate a comparator output (401); receiving the comparator output as a latch start signal (402) by a gate-controlled D-type latch having a reset port; receiving a data signal on a data port and a reset signal on a reset port by the gate-controlled D-type latch (403); generating a pumping signal as an output by the gate-controlled D-type latch (404); generating a plurality of sequentially delayed variations of the pumping signal (405) through respective delay circuits; receiving an input (406) comprising a delayed variation of the pumping signal provided to the last charge pump unit in the plurality of charge pump units through an inverter; generating an output (407) through the inverter; and providing the output of the inverter as a data signal to a latch (408).
應該注意,如本文所使用,術語「在…上方」及「在…上」均包括「直接在…上」(在其間沒有設置中間材料、元件或空間)及「間接在…上」(在其間設置有中間材料、元件或空間)。例如,「在基板上方」形成元件,可以包括:直接在基板上形成元件而其間沒有中間材料/元件,以及,間接在基板上形成元件而其間具有一個以上的中間材料/元件。It should be noted that, as used herein, the terms "over" and "on" include both "directly on" (without intervening materials, elements, or spaces therebetween) and "indirectly on" (with intervening materials, elements, or spaces therebetween). For example, forming a component "over a substrate" may include forming the component directly on the substrate without intervening materials/elements, and forming the component indirectly on the substrate with one or more intervening materials/elements therebetween.
100:電壓調節器 101:泵送控制器 102:泵單元 102-1:電荷泵單元 102-2:電荷泵單元 102-3:電荷泵單元 102-4:電荷泵單元 103:第一電阻器 104:第二電阻器 105:電容器 106:比較器 107:閂鎖器 108:延遲電路 109:延遲電路 110:延遲電路 111:延遲電路 112:反相器 113:節點 200:時序圖 300:方法 301、302、303、304:(方法)步驟 400:方法 401、402、403、404、405、406、407、408:(方法)步驟 D:資料埠 LAT:閂鎖器啟動埠 PMP CLK:(泵送)信號 PMP CLK':(泵送信號的)延遲變型/信號 PMP CLK'':(泵送信號的)延遲變型/信號 PMP CLK''':(泵送信號的)延遲變型/信號 PMP CLK'''':(泵送信號的)延遲變型/信號 Q:輸出 R:重置埠 RESET:(重置埠上的)信號 VD25:輸出電壓 VDD:輸入電壓 VDET:(比較器之)輸出/信號 VREF:參考電壓 V S:分壓 100: Voltage regulator 101: Pumping controller 102: Pump unit 102-1: Charge pump unit 102-2: Charge pump unit 102-3: Charge pump unit 102-4: Charge pump unit 103: First resistor 104: Second resistor 105: Capacitor 106: Comparator 107: Latch 108: Delay circuit 109: Delay circuit 1 10: Delay circuit 111: Delay circuit 112: Inverter 113: Node 200: Timing diagram 300: Methods 301, 302, 303, 304: (Method) Step 400: Methods 401, 402, 403, 404, 405, 406, 407, 408: (Method) Step D: Data port LAT: Latch enable port PMP CLK: (Pumping) signal PMP CLK': (Pumping signal) delay variation/signal PMP CLK'': (Pumping signal) delay variation/signal PMP CLK''': (Pumping signal) delay variation/signal PMP CLK'''': (Pumping signal) delay variation/signal Q: Output R: Reset port RESET: (Reset port) signal VD25: Output voltage VDD: Input voltage VDET: (Comparator) output/signal VREF: Reference voltage VS : Divider voltage
圖1描繪包括一個泵送控制器及複數個電荷泵單元的電壓調節器之示意圖。Figure 1 depicts a schematic diagram of a voltage regulator including a pumping controller and a plurality of charge pump units.
圖2描繪用於圖1的電壓調節器之時序圖。Figure 2 depicts the timing diagram for the voltage regulator of Figure 1.
圖3及圖4描繪圖1的電壓調節器之操作方法之步驟圖。FIG3 and FIG4 illustrate the steps of operating the voltage regulator of FIG1.
100:電壓調節器 100: Voltage regulator
101:泵送控制器 101: Pumping Controller
102-1:電荷泵單元 102-1: Charge pump unit
102-2:電荷泵單元 102-2: Charge pump unit
102-3:電荷泵單元 102-3: Charge pump unit
102-4:電荷泵單元 102-4: Charge pump unit
103:第一電阻器 103: First resistor
104:第二電阻器 104: Second resistor
105:電容器 105:Capacitor
106:比較器 106: Comparator
107:閂鎖器 107: Latch
108:延遲電路 108: Delay Circuit
109:延遲電路 109: Delay Circuit
110:延遲電路 110: Delay circuit
111:延遲電路 111: Delay Circuit
112:反相器 112: Inverter
113:節點 113: Node
Claims (16)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363442807P | 2023-02-02 | 2023-02-02 | |
| US63/442,807 | 2023-02-02 | ||
| US18/135,395 | 2023-04-17 | ||
| US18/135,395 US12206325B2 (en) | 2023-02-02 | 2023-04-17 | Pumping controller for a plurality of charge pump units |
| WOPCT/US23/19748 | 2023-04-25 | ||
| PCT/US2023/019748 WO2024162976A1 (en) | 2023-02-02 | 2023-04-25 | Pumping controller for a plurality of charge pump units |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202437246A TW202437246A (en) | 2024-09-16 |
| TWI892421B true TWI892421B (en) | 2025-08-01 |
Family
ID=86424866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113102362A TWI892421B (en) | 2023-02-02 | 2024-01-22 | Pumping controller for a plurality of charge pump units |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4659344A1 (en) |
| KR (1) | KR20250129039A (en) |
| CN (1) | CN120642197A (en) |
| TW (1) | TWI892421B (en) |
| WO (1) | WO2024162976A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0902525A2 (en) * | 1997-09-12 | 1999-03-17 | Information Storage Devices, Inc. | Method and apparatus for reducing power supply current surges in a charge pump using a delayed clock line |
| US20120300552A1 (en) * | 2011-05-23 | 2012-11-29 | Freescale Semiconductor, Inc. | Charge pump circuit with fast start-up |
| US8493134B2 (en) * | 2010-03-23 | 2013-07-23 | Qualcomm Incorporated | Method and apparatus to provide a clock signal to a charge pump |
| US20160291629A1 (en) * | 2015-04-01 | 2016-10-06 | Kabushiki Kaisha Toshiba | Charge pump and voltage generation circuit |
| US11037636B2 (en) * | 2019-05-14 | 2021-06-15 | Micron Technology, Inc. | Memory devices including voltage generation systems |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7613051B2 (en) * | 2007-03-14 | 2009-11-03 | Apple Inc. | Interleaving charge pumps for programmable memories |
| US12374992B2 (en) * | 2021-06-30 | 2025-07-29 | Skyworks Solutions, Inc. | Controller for radio-frequency switches |
| CN114421760B (en) * | 2022-01-14 | 2025-10-17 | 中国电子科技集团公司第二十四研究所 | Time-interleaved charge pump internal power supply generation circuit |
-
2023
- 2023-04-25 CN CN202380092748.6A patent/CN120642197A/en active Pending
- 2023-04-25 KR KR1020257024669A patent/KR20250129039A/en active Pending
- 2023-04-25 WO PCT/US2023/019748 patent/WO2024162976A1/en not_active Ceased
- 2023-04-25 EP EP23725031.1A patent/EP4659344A1/en active Pending
-
2024
- 2024-01-22 TW TW113102362A patent/TWI892421B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0902525A2 (en) * | 1997-09-12 | 1999-03-17 | Information Storage Devices, Inc. | Method and apparatus for reducing power supply current surges in a charge pump using a delayed clock line |
| US8493134B2 (en) * | 2010-03-23 | 2013-07-23 | Qualcomm Incorporated | Method and apparatus to provide a clock signal to a charge pump |
| US20120300552A1 (en) * | 2011-05-23 | 2012-11-29 | Freescale Semiconductor, Inc. | Charge pump circuit with fast start-up |
| US20160291629A1 (en) * | 2015-04-01 | 2016-10-06 | Kabushiki Kaisha Toshiba | Charge pump and voltage generation circuit |
| US11037636B2 (en) * | 2019-05-14 | 2021-06-15 | Micron Technology, Inc. | Memory devices including voltage generation systems |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024162976A1 (en) | 2024-08-08 |
| EP4659344A1 (en) | 2025-12-10 |
| KR20250129039A (en) | 2025-08-28 |
| TW202437246A (en) | 2024-09-16 |
| CN120642197A (en) | 2025-09-12 |
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