TWI892481B - Memory system and receiver - Google Patents
Memory system and receiverInfo
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- TWI892481B TWI892481B TW113106866A TW113106866A TWI892481B TW I892481 B TWI892481 B TW I892481B TW 113106866 A TW113106866 A TW 113106866A TW 113106866 A TW113106866 A TW 113106866A TW I892481 B TWI892481 B TW I892481B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
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Abstract
Description
本案涉及一種電子系統及電子裝置。詳細而言,本案涉及一種記憶體系統及接收器。This case involves an electronic system and an electronic device. More specifically, it involves a memory system and a receiver.
現有控制器由不同記憶體公司所定義,且控制器輸出的資料選通訊號於待機階段(或稱為未定義階段)違反聯合電子元件工程委員會(Joint Electron Device Engineering Council, JEDEC)記憶體標準。錯誤的資料選通訊號將導致記憶體電路故障。Existing controllers are defined by different memory companies, and the data strobe signals output by these controllers during the standby phase (or undefined phase) violate the Joint Electron Device Engineering Council (JEDEC) memory standard. Incorrect data strobe signals can cause memory circuit failures.
因此,上述技術尚存諸多缺陷,而有待本領域從業人員研發出其餘適合的記憶體系統及接收器。Therefore, the above technology still has many defects, and it is necessary for practitioners in this field to develop other suitable memory systems and receivers.
本案的一面向涉及一種記憶體系統。記憶體系統包含控制器以及記憶體電路。控制器用以輸出第一資料選通訊號及第二資料選通訊號。記憶體電路耦接於控制器,並用以接收第一資料選通訊號及第二資料選通訊號。記憶體電路包含接收器。接收器包含邏輯轉換電路。當第一資料選通訊號及第二資料選通訊號處於相同電壓準位時,邏輯轉換電路用以將第一資料選通訊號及第二資料選通訊號轉換為第三資料選通訊號及第四資料選通訊號。透過邏輯轉換電路轉換後的第三資料選通訊號及第四資料選通訊號包含不同電壓準位。當第一資料選通訊號及第二資料選通訊號處於不同電壓準位時,邏輯轉換電路用以傳遞第一資料選通訊號作為第三資料選通訊號,且用以傳遞第二資料選通訊號作為第四資料選通訊號。One aspect of the present invention relates to a memory system. The memory system includes a controller and a memory circuit. The controller is used to output a first data selection signal and a second data selection signal. The memory circuit is coupled to the controller and is used to receive the first data selection signal and the second data selection signal. The memory circuit includes a receiver. The receiver includes a logic conversion circuit. When the first data selection signal and the second data selection signal are at the same voltage level, the logic conversion circuit is used to convert the first data selection signal and the second data selection signal into a third data selection signal and a fourth data selection signal. The third data selection signal and the fourth data selection signal converted by the logic conversion circuit include different voltage levels. When the first data strobe signal and the second data strobe signal are at different voltage levels, the logic conversion circuit is used to transmit the first data strobe signal as the third data strobe signal and to transmit the second data strobe signal as the fourth data strobe signal.
本案的另一面向涉及一種接收器。接收器包含放大器以及邏輯轉換電路。放大器用以接收及放大自控制器之第一資料選通訊號及第二資料選通訊號。邏輯轉換電路耦接於放大器。當第一資料選通訊號及第二資料選通訊號處於相同電壓準位時,邏輯轉換電路用以將第一資料選通訊號及第二資料選通訊號轉換為第三資料選通訊號及第四資料選通訊號。藉由邏輯轉換電路轉換後的第三資料選通訊號及第四資料選通訊號包含不同電壓準位。當第一資料選通訊號及第二資料選通訊號處於不同電壓準位時,邏輯轉換電路用以傳遞第一資料選通訊號作為第三資料選通訊號,且用以傳遞第二資料選通訊號作為第四資料選通訊號。Another aspect of this invention relates to a receiver. The receiver includes an amplifier and a logic conversion circuit. The amplifier is used to receive and amplify a first data selection signal and a second data selection signal from a controller. The logic conversion circuit is coupled to the amplifier. When the first data selection signal and the second data selection signal are at the same voltage level, the logic conversion circuit is used to convert the first data selection signal and the second data selection signal into a third data selection signal and a fourth data selection signal. After conversion by the logic conversion circuit, the third data selection signal and the fourth data selection signal have different voltage levels. When the first data strobe signal and the second data strobe signal are at different voltage levels, the logic conversion circuit is used to transmit the first data strobe signal as the third data strobe signal and to transmit the second data strobe signal as the fourth data strobe signal.
有鑑於前述之現有技術的缺點及不足,本案提供一種記憶體系統及接收器,以用於將相同電壓準位的資料選通訊號轉換為由JEDEC規定的不同電壓準位的資料選通訊號,使得記憶體晶片或記憶體電路運作正常。In view of the aforementioned shortcomings and deficiencies of the prior art, this invention provides a memory system and receiver for converting data strobe signals of the same voltage level into data strobe signals of different voltage levels specified by JEDEC, so that the memory chip or memory circuit can operate normally.
以下將以圖式及詳細敘述清楚說明本案之精神,任何所屬技術領域中具有通常知識者在瞭解本案之實施例後,當可由本案所教示之技術,加以改變及修飾,其並不脫離本案之精神與範圍。The following diagrams and detailed descriptions clearly illustrate the spirit of this invention. After understanding the embodiments of this invention, anyone with ordinary skill in the art can make changes and modifications based on the techniques taught in this invention without departing from the spirit and scope of this invention.
本文之用語只為描述特定實施例,而無意為本案之限制。單數形式如“一”、“這”、“此”、“本”以及“該”,如本文所用,同樣也包含複數形式。The terms used herein are for describing specific embodiments only and are not intended to be limiting of the present invention. Singular forms such as "a," "the," "this," and "the" as used herein also include plural forms.
關於本文中所使用之『包含』、『包括』、『具有』、『含有』等等,均為開放性的用語,即意指包含但不限於。The terms "include", "including", "have", "contain", etc. used in this document are open terms, meaning including but not limited to.
關於本文中所使用之用詞(terms),除有特別註明外,通常具有每個用詞使用在此領域中、在本案之內容中與特殊內容中的平常意義。某些用以描述本案之用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本案之描述上額外的引導。Unless otherwise noted, the terms used in this document generally have the ordinary meanings they possess in the art, within the context of this application, and in the specific context. Certain terms used to describe this application are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art regarding the description of this application.
第1圖為根據本案一些實施例繪示的記憶體系統100之電路方塊示意圖。在一些實施例中,請參閱第1圖,記憶體系統100包含控制器110及記憶體電路120。控制器110耦接於記憶體電路120。控制器110用以透過多個資料匯流排D1-D15傳送多個訊號CMD及多筆資料。記憶體電路120包含接收器121及多個控制電路122。記憶體電路120包含動態隨機存取記憶體(dynamic random-access memories, DRAM)。在一些實施例中,多個訊號CMD包含多個命令及控制器110所產生的多個訊號。FIG1 is a circuit block diagram of a memory system 100 according to some embodiments of the present invention. Referring to FIG1 , in some embodiments, the memory system 100 includes a controller 110 and a memory circuit 120. The controller 110 is coupled to the memory circuit 120. The controller 110 is configured to transmit a plurality of signals CMD and a plurality of data via a plurality of data buses D1-D15. The memory circuit 120 includes a receiver 121 and a plurality of control circuits 122. The memory circuit 120 includes dynamic random-access memories (DRAM). In some embodiments, the plurality of signals CMD include a plurality of commands and a plurality of signals generated by the controller 110.
控制器110用以於接收器121進入前導階段(preamble stage)之前產生資料選通訊號DQS1及資料選通訊號DQS2至接收器121。接收器121用以根據資料選通訊號DQS1及資料選通訊號DQS2準確辨別一個時脈週期內的各個傳輸週期,使得接收器121可以從多個資料匯流排D1-D15接收多個資料。Controller 110 is used to generate data strobe signals DQS1 and DQS2 to receiver 121 before receiver 121 enters the preamble stage. Receiver 121 is used to accurately identify each transmission cycle within a clock cycle based on data strobe signals DQS1 and DQS2, allowing receiver 121 to receive multiple data from multiple data buses D1-D15.
在一些實施例中,資料選通訊號DQS1及資料選通訊號DQS2分別代表JEDEC記憶體標準所定義的資料選通訊號DQS_c及DQS_t。控制器110可藉由寫入均衡特性及裝置的回饋特性來調整資料選通訊號DQS(DQS_c及DQS_t)及時脈訊號CK(CK_t及CK_c)之間的關係。詳細而言,前述控制器用以使用資料選通訊號DQS1及資料選通訊號DQS2其中每一者的上升緣或下降緣以對時脈訊號進行採樣。技術用語“_t”和“_c”用於分別表示差分訊號對之真值和補值。In some embodiments, data strobe signals DQS1 and DQS2 represent data strobe signals DQS_c and DQS_t, respectively, as defined in the JEDEC memory standard. Controller 110 can adjust the relationship between data strobe signals DQS (DQS_c and DQS_t) and clock signals CK (CK_t and CK_c) by writing equalization characteristics and device feedback characteristics. Specifically, the controller samples the clock signals using the rising or falling edges of data strobe signals DQS1 and DQS2. The technical terms "_t" and "_c" are used to represent the true value and complement of a differential signal pair, respectively.
然後,Double Data Rate Synchronous Dynamic random-access memory(DDR SDRAM)代表「雙倍資料速率同步動態隨機存取記憶體」。技術用語「雙倍資料速率」可用於使用兩個邊緣(上升緣及下降緣)將訊號週期性地從「1」轉變為「0」(反之亦然)的任何產品,例如時脈或資料選通。雙倍資料速率同步動態隨機存取記憶體採用與DQ(輸入/輸出資料)並行移動的雙向資料選通(Bi-directional Data Strobe, DQS),以利於雙倍資料速率同步動態隨機存取記憶體可使用DQS訊號作為參考訊號以取得對應的DQ訊號。一個DQS訊號可以回應4位元或8位元的DQ訊號。使用DQS訊號的基本好處為透過減少雙倍資料速率同步動態隨機存取記憶體的存取時間和動態隨機存取記憶體及記憶體控制器之間的傳播延遲來實現每個引腳的高資料傳輸速率。除此之外,我們可以忽略動態隨機存取記憶體及記憶體控制器的輸入時脈訊號間的偏差。Then, Double Data Rate Synchronous Dynamic Random-access Memory (DDR SDRAM) stands for "Double Data Rate Synchronous Dynamic Random-access Memory." The technical term "double data rate" can be applied to any product that uses two edges (rising and falling) to periodically transition a signal from "1" to "0" (or vice versa), such as a clock or data strobe. DDR SDRAM uses a bidirectional data strobe (DQS) that moves in parallel with the DQ (input/output data) signal. This allows the DDR SDRAM to use the DQS signal as a reference signal to obtain the corresponding DQ signal. A single DQS signal can correspond to either a 4-bit or 8-bit DQ signal. The fundamental benefit of using a DQS signal is that it achieves a high data rate per pin by reducing both the access time of the double-data-rate synchronous dynamic random access memory (DDRM) and the propagation delay between the DDRM and the memory controller. Furthermore, the skew between the input clock signals of the DDRM and the memory controller can be ignored.
根據記憶體產業的規定,例如聯合電子元件工程委員會(JEDEC)。資料選通訊號DQS1及資料選通訊號DQS2被要求於前導階段(preamble stage)之前的待機階段分別處於高準位及低準位(即資料選通訊號DQS1處於高準位及資料選通訊號DQS2處於低準位)。前導階段(preamble stage)為接收裝置提供時序窗口,以於資料選通訊號上存有已知/有效電位時啟用其擷取電路,進而避免捕獲電路的錯誤觸發。在前導階段及隨後的資料輸入階段,資料選通訊號DQS1及資料選通訊號DQS2將於高準位及低準位之間變化。於實際應用中,某些製造業廠商或產生供應商不遵循聯合電子元件工程委員會(JEDEC)之規定,導致這些製造商所提供的資料選通訊號DQS1及資料選通訊號DQS2不會於待機階段中處於正確的準位(即資料選通訊號DQS1處於高準位及資料選通訊號DQS2處於低準位)。According to memory industry regulations, such as those from the Joint Electron Device Engineering Council (JEDEC), data strobe signals DQS1 and DQS2 are required to be high and low, respectively, during the standby phase preceding the preamble stage (i.e., data strobe signal DQS1 is high and data strobe signal DQS2 is low). The preamble stage provides a timing window for the receiving device to activate its capture circuitry when a known/valid level is present on the data strobe signal, thereby avoiding false triggering of the capture circuitry. During the preamble phase and the subsequent data input phase, the data strobe signals DQS1 and DQS2 vary between high and low levels. In actual applications, some manufacturers or product suppliers do not follow the Joint Electron Device Engineering Council (JEDEC) specifications. As a result, the data strobe signals DQS1 and DQS2 provided by these manufacturers are not at the correct levels during the standby phase (i.e., DQS1 is high and DQS2 is low).
詳細而言,於前導階段之前的待機階段,控制器110所輸出的資料選通訊號DQS1及資料選通訊號DQS2(根據JEDEC規定應分別為高準位及低準位)現在被誤認為處於相同的電壓準位,資料選通訊號DQS1及資料選通訊號DQS2將導致記憶體單元故障。為避免記憶體單元產生故障,本案實施例基於資料選通訊號DQS1及資料選通訊號DQS2來分別產生資料選通訊號DQS3及資料選通訊號DQS4,且資料選通訊號DQS3及資料選通訊號DQS4將於待機階段遵循JEDEC規定(即資料選通訊號DQS3處於高準位及資料選通訊號DQS4處於低準位)。Specifically, during the standby phase before the preamble phase, the data strobe signals DQS1 and DQS2 output by the controller 110 (which should be high and low, respectively, according to JEDEC regulations) are mistakenly considered to be at the same voltage level. This can cause memory cell failure. To prevent memory cell failure, the present embodiment generates data strobe signals DQS3 and DQS4 based on data strobe signals DQS1 and DQS2, respectively. Data strobe signals DQS3 and DQS4 follow JEDEC regulations during the standby phase (i.e., data strobe signal DQS3 is at a high level and data strobe signal DQS4 is at a low level).
第2圖為根據本案一些實施例繪示的第1圖之記憶體系統100之記憶體電路120之接收器121之電路方塊示意圖。接收器121包含放大器DA及邏輯轉換電路LC。FIG2 is a circuit block diagram of a receiver 121 of the memory circuit 120 of the memory system 100 of FIG1 according to some embodiments of the present invention. The receiver 121 includes an amplifier DA and a logic conversion circuit LC.
放大器DA用以接收及放大資料選通訊號DQS1及資料選通訊號DQS2。在一些實施例中,放大器DA包含差分放大器。邏輯轉換電路LC耦接於放大器DA。換句話說,邏輯轉換電路LC用以將資料選通訊號DQS1(例如0或1)及資料選通訊號DQS2(例如0或1)轉換為資料選通訊號DQS3(例如1)及資料選通訊號DQS4(例如0) 。Amplifier DA is configured to receive and amplify data strobe signals DQS1 and DQS2. In some embodiments, amplifier DA comprises a differential amplifier. A logic conversion circuit LC is coupled to amplifier DA. In other words, logic conversion circuit LC is configured to convert data strobe signals DQS1 (e.g., 0 or 1) and data strobe signals DQS2 (e.g., 0 or 1) into data strobe signals DQS3 (e.g., 1) and data strobe signals DQS4 (e.g., 0).
第3圖為根據本案一些實施例繪示的邏輯轉換電路LC1對應至第2圖之接收器121之邏輯轉換電路LC之電路方塊示意圖。FIG3 is a circuit block diagram of a logic conversion circuit LC1 corresponding to the logic conversion circuit LC of the receiver 121 in FIG2 according to some embodiments of the present invention.
邏輯轉換電路LC1包含輸入端N1、輸入端N2、輸出端N3及輸出端N4。輸入端N1用以接收資料選通訊號DQS1。輸入端N2用以接收資料選通訊號DQS2。輸出端N3用以輸出資料選通訊號DQS3。輸出端N4用以輸出資料選通訊號DQS4。Logic conversion circuit LC1 includes input terminal N1, input terminal N2, output terminal N3, and output terminal N4. Input terminal N1 is used to receive data strobe signal DQS1. Input terminal N2 is used to receive data strobe signal DQS2. Output terminal N3 is used to output data strobe signal DQS3. Output terminal N4 is used to output data strobe signal DQS4.
邏輯轉換電路LC1更包含反相器I1、反相器I2、邏輯閘G1及邏輯閘G2。請以圖式中元件之上方及右方起算為第一端。反相器I1及反相器I2其中每一者包含第一端及第二端。邏輯閘G1包含輸入端A、輸入端B及輸出端X。邏輯閘G2包含輸入端C、輸入端D及輸出端Y。在一些實施例中,邏輯閘G1包含或閘(OR gate)。邏輯閘G2包含及閘(AND gate)。Logic conversion circuit LC1 further includes inverter I1, inverter I2, logic gate G1, and logic gate G2. The first terminal is counted from the top and right of the components in the figure. Inverter I1 and inverter I2 each include a first terminal and a second terminal. Logic gate G1 includes input terminal A, input terminal B, and output terminal X. Logic gate G2 includes input terminal C, input terminal D, and output terminal Y. In some embodiments, logic gate G1 includes an OR gate. Logic gate G2 includes an AND gate.
在一些實施例中,邏輯閘G1之輸入端A耦接於邏輯轉換電路LC1之輸入端N1。邏輯閘G1之輸入端B耦接於反相器I1之第一端。反相器I1之第二端耦接於邏輯轉換電路LC1之輸入端N2。邏輯閘G1之輸出端X耦接於邏輯轉換電路LC1之輸出端N3。In some embodiments, input terminal A of logic gate G1 is coupled to input terminal N1 of logic conversion circuit LC1. Input terminal B of logic gate G1 is coupled to a first terminal of inverter I1. A second terminal of inverter I1 is coupled to input terminal N2 of logic conversion circuit LC1. Output terminal X of logic gate G1 is coupled to output terminal N3 of logic conversion circuit LC1.
邏輯閘G2之輸入端C耦接於反相器I2之第一端。反相器I2之第二端耦接於邏輯轉換電路LC1之輸入端N1。邏輯閘G2之輸入端D耦接於邏輯轉換電路LC1之輸入端N2。邏輯閘G2之輸出端Y耦接於邏輯轉換電路LC1之輸出端N4。邏輯轉換電路LC1之真值表列如下。Input terminal C of logic gate G2 is coupled to the first terminal of inverter I2. The second terminal of inverter I2 is coupled to input terminal N1 of logic conversion circuit LC1. Input terminal D of logic gate G2 is coupled to input terminal N2 of logic conversion circuit LC1. Output terminal Y of logic gate G2 is coupled to output terminal N4 of logic conversion circuit LC1. The truth table of logic conversion circuit LC1 is shown below.
表一。
第4圖為根據本案一些實施例繪示的資料選通訊號DQS1至資料選通訊號DQS4之訊號時序示意圖。訊號時序示意圖包含待機階段T1、前導階段T2及資料輸入階段T3。FIG4 is a signal timing diagram of data strobe signals DQS1 to DQS4 according to some embodiments of the present invention. The signal timing diagram includes a standby phase T1, a preamble phase T2, and a data input phase T3.
請參閱第3圖及第4圖,資料選通訊號DQS1及資料選通訊號DQS2於待機階段T1中均錯誤地處於相同的電壓準位(例如低準位L)。Referring to Figures 3 and 4, the data strobe signal DQS1 and the data strobe signal DQS2 are erroneously at the same voltage level (e.g., low level L) during the standby phase T1.
於待機階段T1中,資料選通訊號DQS1及資料選通訊號DQS2皆處於低準位L。邏輯轉換電路LC1用以將第一資料選通訊號DQS1(例如低準位L)及第二資料選通訊號DQS2(例如低準位L)轉換為第三資料選通訊號DQS3(例如高準位H)及第四資料選通訊號DQS4(例如低準位L)。於前導階段T2之前的待機階段T1中,第三資料選通訊號DQS3及第四資料選通訊號DQS4將遵循JEDEC規定。During the standby phase T1, both data strobe signals DQS1 and DQS2 are at a low level, L. Logic conversion circuit LC1 is used to convert the first data strobe signal DQS1 (e.g., a low level, L) and the second data strobe signal DQS2 (e.g., a low level, L) into a third data strobe signal DQS3 (e.g., a high level, H) and a fourth data strobe signal DQS4 (e.g., a low level, L). During the standby phase T1, which precedes the preamble phase T2, the third data strobe signal DQS3 and the fourth data strobe signal DQS4 comply with JEDEC specifications.
於前導階段T2及資料輸入階段T3,第一資料選通訊號DQS1及第二資料選通訊號DQS2皆切換於高準位H及低準位L之間。邏輯轉換電路LC1用以將第一資料選通訊號DQS1及第二資料選通訊號DQS2傳遞為第三資料選通訊號DQS3及第四資料選通訊號DQS4,使得邏輯轉換電路LC1不影響前導階段T2及資料輸入階段T3的原來運作。During the preamble phase T2 and the data input phase T3, the first data strobe signal DQS1 and the second data strobe signal DQS2 both switch between a high level (H) and a low level (L). The logic conversion circuit LC1 is used to convert the first and second data strobe signals DQS1 and DQS2 into the third and fourth data strobe signals DQS3 and DQS4, respectively. This ensures that the logic conversion circuit LC1 does not affect the original operation of the preamble phase T2 and the data input phase T3.
然而,本案實施例於前導階段T2之前的待機階段T1不限於第一資料選通訊號DQS1及第二資料選通訊號DQS2其中每一者的電壓準位處於低準位L。資料選通訊號DQS1及資料選通訊號DQS2的電壓準位可處於高準位H,將於後續段落進行討論。However, in the embodiment of the present invention, the standby phase T1 before the leading phase T2 is not limited to the voltage level of each of the first data strobe signal DQS1 and the second data strobe signal DQS2 being at the low level L. The voltage level of the data strobe signal DQS1 and the data strobe signal DQS2 can be at the high level H, which will be discussed in the following paragraphs.
第5圖為根據本案一些實施例繪示的資料選通訊號DQS1至資料選通訊號DQS4之訊號時序示意圖。訊號時序示意圖包含待機階段T1、前導階段T2及資料輸入階段T3。FIG5 is a signal timing diagram of data strobe signals DQS1 to DQS4 according to some embodiments of the present invention. The signal timing diagram includes a standby phase T1, a preamble phase T2, and a data input phase T3.
請參閱到第3圖及第5圖,資料選通訊號DQS1及資料選通訊號DQS2於待機階段T1中均錯誤地處於相同電壓準位(例如高準位H)。Referring to Figures 3 and 5, the data strobe signal DQS1 and the data strobe signal DQS2 are both erroneously at the same voltage level (e.g., high level H) during the standby phase T1.
於待機階段T1中,資料選通訊號DQS1及資料選通訊號DQS2皆處於高準位H。邏輯轉換電路LC1用以將第一資料選通訊號DQS1(例如高準位H)及第二資料選通訊號DQS2(例如高準位H)轉換為第三資料選通訊號DQS3(例如高準位H)及第四資料選通訊號DQS4(例如低準位L)。於前導階段T2之前的待機階段T1中,第三資料選通訊號DQS3及第四資料選通訊號DQS4將遵循JEDEC規定。During the standby phase T1, both data strobe signals DQS1 and DQS2 are at a high level (H). Logic conversion circuit LC1 is used to convert the first data strobe signal DQS1 (e.g., a high level (H)) and the second data strobe signal DQS2 (e.g., a high level (H)) into a third data strobe signal DQS3 (e.g., a high level (H)) and a fourth data strobe signal DQS4 (e.g., a low level (L)). During the standby phase T1, which precedes the preamble phase T2, the third data strobe signal DQS3 and the fourth data strobe signal DQS4 comply with JEDEC specifications.
於前導階段T2及資料輸入階段T3,第一資料選通訊號DQS1及第二資料選通訊號DQS2皆切換於高準位H及低準位L之間。邏輯轉換電路LC1用以將第一資料選通訊號DQS1及第二資料選通訊號DQS2傳遞為第三資料選通訊號DQS3及第四資料選通訊號DQS4,使得邏輯轉換電路LC1不影響前導階段T2及資料輸入階段T3的原來運作。During the preamble phase T2 and the data input phase T3, the first data strobe signal DQS1 and the second data strobe signal DQS2 both switch between a high level (H) and a low level (L). The logic conversion circuit LC1 is used to convert the first and second data strobe signals DQS1 and DQS2 into the third and fourth data strobe signals DQS3 and DQS4, respectively. This ensures that the logic conversion circuit LC1 does not affect the original operation of the preamble phase T2 and the data input phase T3.
第6圖為根據本案一些實施例繪示的邏輯轉換電路LC2對應至第2圖之接收器121之邏輯轉換電路LC之電路方塊示意圖。FIG6 is a circuit block diagram of a logic conversion circuit LC2 corresponding to the logic conversion circuit LC of the receiver 121 in FIG2 according to some embodiments of the present invention.
邏輯轉換電路LC2包含輸入端N1、輸入端N2、輸出端N3及輸出端N4。輸入端N1用以接收資料選通訊號DQS1。輸入端N2用以接收資料選通訊號DQS2。輸出端N3用以輸出資料選通訊號DQS3。輸出端N4用以輸出資料選通訊號DQS4。Logic conversion circuit LC2 includes input terminal N1, input terminal N2, output terminal N3, and output terminal N4. Input terminal N1 is used to receive data strobe signal DQS1. Input terminal N2 is used to receive data strobe signal DQS2. Output terminal N3 is used to output data strobe signal DQS3. Output terminal N4 is used to output data strobe signal DQS4.
邏輯轉換電路LC2更包含反相器I3、反相器I4、邏輯閘G3及邏輯閘G4。反相器I1及反相器I2其中每一者包含第一端及第二端。邏輯閘G3包含輸入端A、輸入端B及輸出端X。邏輯閘G4包含輸入端C、輸入端D及輸出端Y。在一些實施例中,邏輯閘G3包含反及閘(NAND gate)。邏輯閘G4包含反或閘(NOR gate)。Logic conversion circuit LC2 further includes an inverter I3, an inverter I4, a logic gate G3, and a logic gate G4. Inverter I1 and inverter I2 each include a first terminal and a second terminal. Logic gate G3 includes an input terminal A, an input terminal B, and an output terminal X. Logic gate G4 includes an input terminal C, an input terminal D, and an output terminal Y. In some embodiments, logic gate G3 includes a NAND gate. Logic gate G4 includes a NOR gate.
在一些實施例中,邏輯閘G3之輸入端A耦接於反相器I3之第一端。反相器I3之第二端耦接於邏輯轉換電路LC2之輸入端N1。邏輯閘G3之輸入端B耦接於邏輯轉換電路LC2之輸入端N2。邏輯閘G3之輸出端X耦接於邏輯轉換電路LC2之輸出端N3。In some embodiments, input terminal A of logic gate G3 is coupled to a first terminal of inverter I3. A second terminal of inverter I3 is coupled to input terminal N1 of logic conversion circuit LC2. Input terminal B of logic gate G3 is coupled to input terminal N2 of logic conversion circuit LC2. Output terminal X of logic gate G3 is coupled to output terminal N3 of logic conversion circuit LC2.
邏輯閘G4之輸入端C耦接於邏輯轉換電路LC2之輸入端N1。邏輯閘G4之輸入端D耦接於反相器I4之第一端。反相器I4之第二端耦接於邏輯轉換電路LC2之輸入端N2。邏輯閘G4之輸出端Y耦接於邏輯轉換電路LC2之輸出端N4。邏輯轉換電路LC2之操作相似於邏輯轉換電路LC1之操作。邏輯轉換電路LC2之真值表相似於邏輯轉換電路LC1之表一。Input terminal C of logic gate G4 is coupled to input terminal N1 of logic conversion circuit LC2. Input terminal D of logic gate G4 is coupled to the first terminal of inverter I4. The second terminal of inverter I4 is coupled to input terminal N2 of logic conversion circuit LC2. Output terminal Y of logic gate G4 is coupled to output terminal N4 of logic conversion circuit LC2. The operation of logic conversion circuit LC2 is similar to that of logic conversion circuit LC1. The truth table of logic conversion circuit LC2 is similar to Table 1 of logic conversion circuit LC1.
第7圖為根據本案一些實施例繪示的邏輯轉換電路LC3對應至第2圖之接收器121之邏輯轉換電路LC之電路方塊示意圖。第7圖之邏輯轉換電路LC3及第3圖之邏輯轉換電路LC1之間存有多個差異。第一個差異為邏輯轉換電路LC3更包含反相器I3。第二個差異為邏輯閘G2更包含輸入端E。第三個差異為反相器I3耦接於邏輯閘G2之輸入端E及邏輯閘G1之輸出端X。第7圖實施例之其餘電路結構階相似於第3圖之電路結構,於此不作贅述。邏輯轉換電路LC3之操作相似於邏輯轉換電路LC1之操作。邏輯轉換電路LC3之真值表相似於邏輯轉換電路LC1之表一。FIG7 is a circuit block diagram of a logic conversion circuit LC3 corresponding to the logic conversion circuit LC of the receiver 121 in FIG2 according to some embodiments of the present invention. There are multiple differences between the logic conversion circuit LC3 in FIG7 and the logic conversion circuit LC1 in FIG3. The first difference is that the logic conversion circuit LC3 further includes an inverter I3. The second difference is that the logic gate G2 further includes an input terminal E. The third difference is that the inverter I3 is coupled to the input terminal E of the logic gate G2 and the output terminal X of the logic gate G1. The remaining circuit structure of the embodiment of FIG7 is similar to the circuit structure of FIG3 and is not described in detail here. The operation of logic conversion circuit LC3 is similar to that of logic conversion circuit LC1. The truth table of logic conversion circuit LC3 is similar to Table 1 of logic conversion circuit LC1.
第8圖為根據本案一些實施例繪示的邏輯轉換電路LC4對應至第2圖之接收器121之邏輯轉換電路LC之電路方塊示意圖。FIG8 is a circuit block diagram of a logic conversion circuit LC4 corresponding to the logic conversion circuit LC of the receiver 121 in FIG2 according to some embodiments of the present invention.
第8圖之邏輯轉換電路LC4及第6圖之邏輯轉換電路LC2之間存有多個差異。第一個差異為邏輯閘G4更包含輸入端E。第二個差異為邏輯閘G4之輸入端E耦接於邏輯閘G3之輸出端X。第8圖實施例之其餘電路結構階相似於第6圖之電路結構,於此不作贅述。邏輯轉換電路LC4之操作相似於邏輯轉換電路LC1之操作。邏輯轉換電路LC4之真值表相似於邏輯轉換電路LC1之表一。There are several differences between the logic conversion circuit LC4 of Figure 8 and the logic conversion circuit LC2 of Figure 6. The first difference is that the logic gate G4 further includes an input terminal E. The second difference is that the input terminal E of the logic gate G4 is coupled to the output terminal X of the logic gate G3. The remaining circuit structure of the embodiment of Figure 8 is similar to the circuit structure of Figure 6 and is not described in detail here. The operation of the logic conversion circuit LC4 is similar to the operation of the logic conversion circuit LC1. The truth table of the logic conversion circuit LC4 is similar to Table 1 of the logic conversion circuit LC1.
在一些實施例中,每個邏輯轉換電路LC1至邏輯轉換電路LC4之布林表示式(Boolean algebra)根據表一列如下。 …式一 In some embodiments, the Boolean algebra of each of the logic conversion circuits LC1 to LC4 is listed below according to Table 1. ...Formula 1
依據前述實施例,本案提供一種記憶體系統及接收器,以用於將相同電壓準位的資料選通訊號轉換為由JEDEC規定的不同電壓準位的資料選通訊號,使得記憶體晶片或記憶體電路運作正常。According to the aforementioned embodiments, the present invention provides a memory system and a receiver for converting data strobe signals of the same voltage level into data strobe signals of different voltage levels specified by JEDEC, so that the memory chip or memory circuit operates normally.
雖然本案以詳細之實施例揭露如上,然而本案並不排除其他可行之實施態樣。因此,本案之保護範圍當視所附之申請專利範圍所界定者為準,而非受於前述實施例之限制。Although this invention is disclosed above with detailed embodiments, it does not exclude other feasible embodiments. Therefore, the scope of protection of this invention shall be determined by the scope of the attached patent application, and shall not be limited by the aforementioned embodiments.
對本領域技術人員而言,在不脫離本案之精神和範圍內,當可對本案作各種之更動與潤飾。基於前述實施例,所有對本案所作的更動與潤飾,亦涵蓋於本案之保護範圍內。It is clear to those skilled in the art that various modifications and improvements can be made to this application without departing from the spirit and scope of this application. Based on the aforementioned embodiments, all modifications and improvements made to this application are also covered by the scope of protection of this application.
100:記憶體系統 110:控制器 120:記憶體電路 121:接收器 122:控制電路 CMD:訊號 D1-D15:資料匯流排 DA:放大器 LC, LC1~LC4:邏輯轉換電路 DQS1~DQS4:資料選通訊號 N1, N2, A, B, C, D, E:輸入端 N3, N4, X, Y:輸出端 G1~G4:邏輯閘 I1~I4:反相器 H:高準位 L:低準位 T1:待機階段 T2:前導階段 T3:資料輸入階段 100: Memory system 110: Controller 120: Memory circuit 121: Receiver 122: Control circuit CMD: Signal D1-D15: Data bus DA: Amplifier LC, LC1-LC4: Logic conversion circuit DQS1-DQS4: Data strobe signal N1, N2, A, B, C, D, E: Inputs N3, N4, X, Y: Outputs G1-G4: Logic gates I1-I4: Inverters H: High level L: Low level T1: Standby phase T2: Preamble phase T3: Data input phase
參照後續段落中的實施方式以及下列圖式,當可更佳地理解本案的內容: 第1圖為根據本案一些實施例繪示的記憶體系統之電路方塊示意圖; 第2圖為根據本案一些實施例繪示的記憶體系統之記憶體電路之接收器之電路方塊示意圖; 第3圖為根據本案一些實施例繪示的接收器之邏輯轉換電路之電路方塊示意圖; 第4圖為根據本案一些實施例繪示的多個資料選通訊號之訊號時序示意圖; 第5圖為根據本案一些實施例繪示的多個資料選通訊號之訊號時序示意圖; 第6圖為根據本案一些實施例繪示的接收器之邏輯轉換電路之電路方塊示意圖; 第7圖為根據本案一些實施例繪示的接收器之邏輯轉換電路之電路方塊示意圖;以及 第8圖為根據本案一些實施例繪示的接收器之邏輯轉換電路之電路方塊示意圖。 The present invention may be better understood by referring to the embodiments described in the following paragraphs and the following figures: Figure 1 is a schematic circuit block diagram of a memory system according to some embodiments of the present invention; Figure 2 is a schematic circuit block diagram of a receiver of a memory circuit of a memory system according to some embodiments of the present invention; Figure 3 is a schematic circuit block diagram of a logic conversion circuit of a receiver according to some embodiments of the present invention; Figure 4 is a schematic signal timing diagram of multiple data strobe signals according to some embodiments of the present invention; Figure 5 is a schematic signal timing diagram of multiple data strobe signals according to some embodiments of the present invention; Figure 6 is a schematic circuit block diagram of a logic conversion circuit of a receiver according to some embodiments of the present invention; Figure 7 is a schematic circuit block diagram of a logic conversion circuit of a receiver according to some embodiments of the present invention; and Figure 8 is a schematic circuit block diagram of a logic conversion circuit of a receiver according to some embodiments of the present invention.
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121:接收器 DA:放大器 LC:邏輯轉換電路 DQS1~DQS4:資料選通訊號 121: Receiver DA: Amplifier LC: Logic Converter DQS1-DQS4: Data Strobe Signals
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| TWI718719B (en) * | 2019-07-30 | 2021-02-11 | 大陸商廈門星宸科技有限公司 | Memory controller, method for read control of memory, and associated storage system |
| CN111124998B (en) * | 2018-10-30 | 2023-08-11 | 三星电子株式会社 | System on chip, operating method thereof, and electronic device including the system on chip |
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| KR101043725B1 (en) * | 2009-07-01 | 2011-06-24 | 주식회사 하이닉스반도체 | Data strobe signal generation circuit and signal generation method |
| TWI854672B (en) * | 2023-05-29 | 2024-09-01 | 瑞昱半導體股份有限公司 | Memory controller and method for receiving memory data |
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| US9471484B2 (en) * | 2012-09-19 | 2016-10-18 | Novachips Canada Inc. | Flash memory controller having dual mode pin-out |
| CN108062962A (en) * | 2016-11-08 | 2018-05-22 | 爱思开海力士有限公司 | Data storage device and its operating method |
| TWI698751B (en) * | 2018-05-08 | 2020-07-11 | 美商美光科技公司 | Memory device and method of operation for delay element of memeroy device |
| CN111124998B (en) * | 2018-10-30 | 2023-08-11 | 三星电子株式会社 | System on chip, operating method thereof, and electronic device including the system on chip |
| TWI718719B (en) * | 2019-07-30 | 2021-02-11 | 大陸商廈門星宸科技有限公司 | Memory controller, method for read control of memory, and associated storage system |
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| US20250124967A1 (en) | 2025-04-17 |
| US12499928B2 (en) | 2025-12-16 |
| CN119811438A (en) | 2025-04-11 |
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