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TWI892313B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method

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Publication number
TWI892313B
TWI892313B TW112144865A TW112144865A TWI892313B TW I892313 B TWI892313 B TW I892313B TW 112144865 A TW112144865 A TW 112144865A TW 112144865 A TW112144865 A TW 112144865A TW I892313 B TWI892313 B TW I892313B
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Taiwan
Prior art keywords
substrate
processing
camera
processing chamber
periphery
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TW112144865A
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Chinese (zh)
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TW202449865A (en
Inventor
時末尚悟
岡本悟史
猿渡健
北村藤和
久保友輔
吉田幸史
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日商斯庫林集團股份有限公司
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Publication of TW202449865A publication Critical patent/TW202449865A/en
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Publication of TWI892313B publication Critical patent/TWI892313B/en

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    • H10P72/0604
    • H10P52/00
    • H10P70/20
    • H10P72/0414

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  • Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

本發明提供一種基板處理裝置及基板處理方法,其可一面抑制處理室內的微粒產生一面拍攝基板周緣部的處理狀況,且可將焦點對準於基板上表面的廣大範圍以進行攝影。 一面將處理液供給至旋轉之基板W的上表面,一面藉由相機84對基板W的周緣部進行攝影。藉此,可拍攝基板W周緣部的處理狀態。相機84被配置於處理室30的外部。因此,其可於處理室30內的處理空間31中抑制起因於相機84的微粒產生。此外,藉由使用第1反射鏡81,可自正上方拍攝基板W的周緣部。藉此,可將焦點對準於基板W上表面的廣大範圍以進行攝影。 The present invention provides a substrate processing apparatus and method that can capture processing conditions around the substrate W while suppressing particle generation within a processing chamber. This allows for imaging with a focus over a wide area of the substrate's top surface. While processing liquid is supplied to the top surface of a rotating substrate W, a camera 84 captures the periphery of the substrate W. This allows for imaging of the processing conditions around the substrate W. The camera 84 is positioned outside the processing chamber 30. Therefore, particle generation caused by the camera 84 can be suppressed within the processing space 31 within the processing chamber 30. Furthermore, the use of a first reflecting mirror 81 allows imaging of the substrate W's periphery from directly above. This allows for imaging with a focus over a wide area of the substrate's top surface.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明係關於一種基板處理裝置及基板處理方法,其藉由處理液對基板進行處理。 The present invention relates to a substrate processing apparatus and a substrate processing method, which process a substrate using a processing liquid.

於半導體晶圓等基板的製造步驟中,一面於處理室內使基板以水平姿勢旋轉,一面進行將處理液供給至基板上表面的處理。例如,專利文獻1記載有進行此一處理之習知的基板處理裝置。 During the manufacturing process of substrates such as semiconductor wafers, a process liquid is supplied to the top surface of the substrate while the substrate is rotated horizontally within a processing chamber. For example, Patent Document 1 describes a known substrate processing apparatus that performs this process.

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

專利文獻1:日本專利特開2019-140340號公報 Patent Document 1: Japanese Patent Publication No. 2019-140340

於此種基板處理裝置中,朝向基板上表面的中央部吐出之處理液係藉由基板的旋轉而朝基板的周緣部擴散。此時,形成於基板上表面之液膜隨著自基板的中央部朝周緣部擴散而逐漸變薄。因此,於基板上表面的周緣部,可能產生被稱為「覆蓋間斷(coverage break)」的現象,覆蓋間斷係因液膜中斷而使基板的上表面露出之現象。當產生覆蓋間斷,則於基板的上表面處理液的處理變得不均勻。 In this type of substrate processing apparatus, the processing liquid discharged toward the center of the substrate's top surface diffuses toward the substrate's periphery as the substrate rotates. The liquid film formed on the substrate's top surface gradually thins as it diffuses from the center toward the periphery. Consequently, a phenomenon known as "coverage break" may occur at the periphery of the substrate's top surface. A coverage break is a break in the liquid film, exposing the substrate's top surface. When a coverage break occurs, the processing liquid is unevenly applied to the substrate's top surface.

為了監視有無產生覆蓋間斷,例如,可考慮一面對基板供給處理液,一面藉由相機對基板的周緣部進行攝影。然而,當將相機配置於處理室的內部,則可能因相機所產生的微粒而污染基板。此外,若自斜上方拍攝基板,則存在有於基板的上表面可對準焦點之範圍變窄的問題。 To monitor for coverage gaps, for example, one approach could be to supply processing liquid to the substrate while photographing the substrate's periphery with a camera. However, placing the camera inside the processing chamber could contaminate the substrate with particles generated by the camera. Furthermore, photographing the substrate from an oblique angle narrows the range within which the focus can be placed on the substrate's top surface.

本發明係有鑑於上述情況所完成者,其目的在於提供一種基板處理裝置及基板處理方法,其可一面抑制處理室內的微粒產生一面拍攝基板周緣部的處理狀況,且可將焦點對準於基板上表面的廣大範圍以進行攝影。 The present invention was developed in light of the above-mentioned circumstances. Its purpose is to provide a substrate processing apparatus and method that can capture the processing conditions around the substrate while suppressing the generation of particles within the processing chamber. The imaging can also be performed with the focus focused on a wide area of the substrate's top surface.

為了解決上述問題,本發明之第1態樣係藉由處理液對基板進行處理之基板處理裝置,其具備有:處理室,其具有隔壁及窗部,上述隔壁劃分對上述基板進行處理之處理空間,上述窗部設置於上述隔壁的一部分;保持部,其於上述處理室內以水平姿勢保持上述基板;旋轉機構,其使上述保持部以沿鉛垂方向延伸之旋轉軸為中心進行旋轉;處理液供給部,其藉由將處理液供給至上述保持部所保持之上述基板的上表面,而於上述基板的上表面形成液膜;第1反射鏡,其位於上述處理室的內部,且位於上述保持部所保持之上述基板的周緣部上方;相機,其位於上述處理室的外部,且經由上述窗部及上述第1反射鏡而拍攝上述基板的周緣部;及控制部,其控制上述旋轉機構、上述處理液供給部、及上述相機;上述控制部係一面使上述旋轉機構及上述處理液供給部動作,一面使上述相機執行攝影。 In order to solve the above problems, the first aspect of the present invention is a substrate processing device for processing a substrate with a processing liquid, which comprises: a processing chamber having a partition wall and a window portion, wherein the partition wall divides a processing space for processing the substrate, and the window portion is provided at a portion of the partition wall; a holding portion for holding the substrate in a horizontal position in the processing chamber; a rotating mechanism for rotating the holding portion around a rotation axis extending in a vertical direction; and a processing liquid supply portion for supplying the processing liquid to the substrate held by the holding portion. The processing liquid supply unit forms a liquid film on the upper surface of the substrate; a first reflecting mirror is located inside the processing chamber and above the peripheral portion of the substrate held by the holding unit; a camera is located outside the processing chamber and images the peripheral portion of the substrate via the window and the first reflecting mirror; and a control unit controls the rotating mechanism, the processing liquid supply unit, and the camera; the control unit operates the rotating mechanism and the processing liquid supply unit while causing the camera to perform imaging.

本發明之第2態樣係於第1態樣的基板處理裝置中,更具備有:照明部,其位於上述處理室的外部,且經由上述窗部及上述第1反射鏡而朝向上述基板的周緣部照射光。 The second aspect of the present invention is the substrate processing apparatus of the first aspect, further comprising: an illumination unit located outside the processing chamber and irradiating light toward the periphery of the substrate via the window and the first reflective mirror.

本發明之第3態樣係於第2態樣的基板處理裝置中,更具備有:半反射鏡,其位於上述處理室的外部;於藉由上述半反射鏡分岐之2個光路的一者,被配置有上述照明部,於藉由上述半反射鏡分岐之2個光路的另一者,被配置有上述相機。 A third aspect of the present invention is the substrate processing apparatus of the second aspect, further comprising: a semi-reflective mirror located outside the processing chamber; the illumination unit is disposed on one of the two optical paths branched by the semi-reflective mirror; and the camera is disposed on the other of the two optical paths branched by the semi-reflective mirror.

本發明之第4態樣係於第1態樣至第3態樣中任一態樣的基板處理裝置中,上述基板為矽晶圓,上述第1反射鏡亦為矽晶圓。 A fourth aspect of the present invention is a substrate processing apparatus according to any one of the first to third aspects, wherein the substrate is a silicon wafer and the first reflective mirror is also a silicon wafer.

本發明之第5態樣係於第4態樣的基板處理裝置中,更具備有:第2反射鏡,其位於上述處理室的外部,且反射面為銀或鋁;上述相機經由上述第2反射鏡、上述窗部、及上述第1反射鏡而對上述基板的周緣部進行攝影。 The fifth aspect of the present invention is the substrate processing apparatus of the fourth aspect, further comprising: a second reflective mirror located outside the processing chamber, the reflective surface of which is silver or aluminum; and the camera photographs the periphery of the substrate via the second reflective mirror, the window, and the first reflective mirror.

本發明之第6態樣係於第1態樣至第5態樣中任一態樣的基板處理裝置中,上述相機係事件相機(event-based camera)。 A sixth aspect of the present invention is a substrate processing apparatus according to any one of the first to fifth aspects, wherein the camera is an event-based camera.

本發明之第7態樣係於第1態樣至第6態樣中任一態樣的基板處理裝置中,更具備有:風扇過濾器單元,其設置於上述處理室的上部。 A seventh aspect of the present invention is a substrate processing apparatus according to any one of the first to sixth aspects, further comprising a fan filter unit disposed above the processing chamber.

本發明之第8態樣係於第1態樣至第7態樣中任一態樣的基板處理裝置中,更具備有:杯體,其於上述處理室的內部包圍上述保持部所保持之上述基板。 The eighth aspect of the present invention is the substrate processing apparatus according to any one of the first to seventh aspects, further comprising: a cup body that surrounds the substrate held by the holding portion within the processing chamber.

本發明之第9態樣係於第1態樣至第8態樣中任一態樣的基板處理裝置中,上述控制部根據自上述相機獲得的攝影資料,檢查上述基板的上表面之覆蓋間斷的產生狀況。 A ninth aspect of the present invention is a substrate processing apparatus according to any one of the first to eighth aspects, wherein the control unit detects the occurrence of coating discontinuities on the upper surface of the substrate based on imaging data obtained from the camera.

本發明之第10態樣係藉由處理液對基板進行處理之基板處理方法,其實施以下(a)及(b)的處理:(a)於具有對上述基板進行處理之處理空間予以劃分的隔壁之處理室內,一面以沿鉛垂方向延伸的旋轉軸 為中心使以水平姿勢所保持之上述基板旋轉,一面將處理液供給至上述基板的上表面,藉此於上述基板的上表面形成液膜之處理;及(b)一面執行上述處理(a)一面拍攝上述基板的周緣部之處理;於上述處理(b)中,位於上述處理室的外部之相機,經由窗部及第1反射鏡拍攝上述基板的周緣部,上述窗部設置於上述隔壁,上述第1反射鏡位於上述處理室內部之上述基板的周緣部上方。 The tenth aspect of the present invention is a substrate processing method for processing a substrate with a processing liquid, wherein the following processes (a) and (b) are performed: (a) in a processing chamber having a partition wall that separates a processing space for processing the substrate, the substrate held in a horizontal position is rotated about a rotation axis extending in a vertical direction, while the processing liquid is supplied to the upper surface of the substrate. (a) forming a liquid film on the upper surface of the substrate; and (b) photographing the periphery of the substrate while performing the process (a). In the process (b), a camera located outside the processing chamber photographs the periphery of the substrate through a window provided in the partition wall and a first reflecting mirror located above the periphery of the substrate within the processing chamber.

根據本發明之第1態樣至第10態樣,一面將處理液供給至旋轉之基板的上表面,一面藉由相機對基板的周緣部進行攝影。藉此,可拍攝基板周緣部的處理狀態。相機被配置於處理室的外部。因此,其可於處理室內的處理空間抑制起因於相機的微粒產生。此外,藉由使用第1反射鏡,其可自正上方拍攝基板的周緣部。藉此,可將焦點對準於基板上表面的廣大範圍來進行攝影。 According to the first to tenth aspects of the present invention, while a processing liquid is supplied to the top surface of a rotating substrate, the periphery of the substrate is photographed by a camera. This allows for capturing images of the processing status of the substrate periphery. The camera is located outside the processing chamber, thus suppressing the generation of camera-induced particles within the processing space within the chamber. Furthermore, by using a first reflecting mirror, the periphery of the substrate can be captured from directly above, enabling photography to focus on a wide area of the substrate's top surface.

特別是,根據本發明之第2態樣,可自正上方對基板的周緣部照射光。藉此,可更清晰地拍攝基板的周緣部。此外,照明部被配置於處理室的外部。因此,於處理室內的處理空間,可抑制起因於照明的微粒產生。 In particular, according to the second aspect of the present invention, light can be irradiated directly onto the periphery of the substrate from above, enabling clearer images of the periphery. Furthermore, the illumination unit is located outside the processing chamber. Therefore, the generation of particles caused by illumination within the processing space within the processing chamber can be suppressed.

特別是,根據本發明之第3態樣,可使相機的光軸與照明部的光軸一致。 In particular, according to the third aspect of the present invention, the optical axis of the camera can be aligned with the optical axis of the lighting unit.

特別是,根據本發明之第4態樣,可抑制起因於第1反射鏡的微粒產生。 In particular, according to the fourth aspect of the present invention, the generation of particles caused by the first reflective mirror can be suppressed.

特別是,根據本發明之第5態樣,被配置於處理室內之第1反射鏡係使用不易產生微粒的矽晶圓,而被配置於處理室外之第2反射鏡 係使用反射率高的銀或鋁的反射鏡。藉此,可於抑制基板的污染,並且清晰地拍攝基板的周緣部。 In particular, according to the fifth aspect of the present invention, the first reflective mirror located inside the processing chamber is made of a silicon wafer that is less susceptible to particle generation, while the second reflective mirror located outside the processing chamber is made of silver or aluminum, which has a high reflectivity. This reduces substrate contamination and allows for clear images of the substrate's periphery.

特別是,根據本發明之第6態樣,藉由使用事件相機,可拍攝基板周緣部的高速動作,且可抑制拍攝資料的資訊量。 In particular, according to the sixth aspect of the present invention, by using an event camera, it is possible to capture high-speed motion of the substrate periphery while minimizing the amount of information in the captured data.

特別是,根據本發明之第7態樣,可於處理室內的處理空間形成潔淨化空氣的下降氣流。但是,當於處理室的上部設置風扇過濾器單元,則難以於處理室的上部設置相機。然而,根據本發明,可將相機配置於處理室的側面,且經由第1反射鏡自上方拍攝基板。 In particular, according to the seventh aspect of the present invention, a downward flow of clean air can be formed within the processing space of the processing chamber. However, when the fan-filter unit is installed above the processing chamber, it is difficult to install a camera there. However, according to the present invention, the camera can be placed on the side of the processing chamber and photograph the substrate from above via the first reflective mirror.

特別是,根據本發明之第8態樣,可藉由用杯體接收自基板飛散之處理液而進行回收。但是,當於基板的周圍配置杯體,則難以自斜上方對基板的周緣部進行攝影。然而,根據本發明,藉由使用第1反射鏡,可自正上方對基板的周緣部進行攝影。 In particular, according to the eighth aspect of the present invention, the processing liquid that scatters from the substrate can be collected and recovered by using a cup. However, when the cup is arranged around the substrate, it is difficult to photograph the periphery of the substrate from an oblique angle. However, according to the present invention, by using the first reflective mirror, the periphery of the substrate can be photographed from directly above.

特別是,根據本發明之第9態樣,可檢查容易於基板的周緣部產生之覆蓋間斷的狀況。 In particular, according to the ninth aspect of the present invention, it is possible to inspect the condition of coverage discontinuities that are likely to occur at the periphery of the substrate.

1:基板處理裝置 1: Substrate processing equipment

10:索引器區塊 10: Indexer Block

11:載體載置部 11: Carrier loading section

12:第1搬送部 12: 1st Transport Department

20:處理區塊 20: Processing Block

21:緩衝區 21: Buffer Zone

22:第2搬送部 22: 2nd Transport Department

23:處理單元 23: Processing unit

30:處理室 30: Processing Room

31:處理空間 31: Processing Space

32:隔壁 32: Next door

33:窗部 33: Window

34:風扇過濾器單元 34: Fan filter unit

35:排氣管道 35: Exhaust duct

40:保持部 40: Maintenance Department

41:旋轉基座 41: Rotating base

42:卡盤銷 42: Chuck pin

43:卡盤銷切換機構 43: Chuck pin switching mechanism

50:旋轉機構 50: Rotating mechanism

51:馬達罩 51: Motor cover

52:旋轉馬達 52: Rotary Motor

53:支撐軸 53: Support shaft

60:處理液供給部 60: Treatment fluid supply unit

61:吐出噴嘴 61: Spit out the nozzle

70:杯體 70: Cup body

71:內杯體 71: Inner cup

72:中杯體 72: Medium cup

73:外杯體 73: Outer cup

80:攝像部 80: Camera Department

81:第1反射鏡 81: 1st Reflector

82:半反射鏡 82: Half-reflective mirror

83:照明部 83:Lighting Department

84:相機 84: Camera

85:第2反射鏡 85: Second Reflector

90:控制部 90: Control Department

91:處理器 91: Processor

92:記憶體 92: Memory

93:記憶部 93: Memory

94:顯示部 94: Display unit

121:第1搬送路徑 121: Transport Route 1

122:第1搬送機器人 122: The first transport robot

221:第2搬送路徑 221: Second Transport Path

222:第2搬送機器人 222: The second transport robot

321:側壁 321: Sidewall

322:頂板部 322: Top plate

323:底板部 323: Bottom plate

530:旋轉軸 530: Rotation axis

611:噴嘴臂 611: Nozzle Arm

612:噴嘴頭 612: Nozzle

613:噴嘴馬達 613: Nozzle Motor

614:供液源 614: Liquid supply source

615:配管 615:Piping

616:泵 616: Pump

617:閥 617: Valve

710:第1導引板 710: First guide plate

711:第1排液槽 711: 1st drain tank

712:第2排液槽 712: 2nd drain tank

713:第3排液槽 713: 3rd drain tank

720:第2導引板 720: Second guide plate

730:第3導引板 730: 3rd guide plate

C:載體 C: Carrier

D:攝影資料 D:Photographic data

L0:光路 L0: Optical Path

L1:光路 L1: Optical Path

L2:光路 L2: Optical Path

P1:控制程式 P1: Control Program

P2:檢查程式 P2: Check program

W:基板 W: substrate

S1~S6:步驟 S1~S6: Steps

S31~S35:步驟 S31~S35: Steps

圖1為基板處理裝置的平面圖。 Figure 1 is a plan view of the substrate processing apparatus.

圖2為處理單元的平面圖。 Figure 2 is a plan view of the processing unit.

圖3為處理單元的縱剖面圖。 Figure 3 is a longitudinal cross-sectional view of the processing unit.

圖4為示意表示連接至噴嘴頭之供液部的圖。 Figure 4 is a schematic diagram showing the liquid supply portion connected to the nozzle head.

圖5為處理單元的控制方塊圖。 Figure 5 is the control block diagram of the processing unit.

圖6為表示基板的處理順序的流程圖。 Figure 6 is a flow chart showing the substrate processing sequence.

圖7為表示覆蓋間斷之監視處理的流程的流程圖。 Figure 7 is a flow chart showing the flow of monitoring processing for covering intermittent periods.

圖8為第1變形例的處理單元的縱剖面圖。 Figure 8 is a longitudinal cross-sectional view of the processing unit of the first variant.

以下,參照圖式,對本發明之實施形態進行詳細說明。 The following describes the embodiments of the present invention in detail with reference to the drawings.

<1.基板處理裝置的整體構成> <1. Overall Structure of the Substrate Processing Device>

圖1為本發明一實施形態的基板處理裝置1的平面圖。該基板處理裝置1係於半導體晶圓的製造步驟中,將處理液供給至圓板狀之基板W(矽晶圓)的表面,而對基板W的表面進行處理之裝置。如圖1所示,基板處理裝置1具有索引器區塊(indexer block)10及處理區塊20。索引器區塊10與處理區塊20係於水平之地面上鄰接配置。 Figure 1 is a plan view of a substrate processing apparatus 1 according to one embodiment of the present invention. During the semiconductor wafer manufacturing process, substrate processing apparatus 1 supplies a processing liquid to the surface of a circular substrate W (silicon wafer) to process the surface of the substrate W. As shown in Figure 1 , substrate processing apparatus 1 includes an indexer block 10 and a processing block 20. Indexer block 10 and processing block 20 are arranged adjacent to each other on a horizontal surface.

以下,將索引器區塊10與處理區塊20的排列方向稱為「前後方向」。此外,將與前後方向正交的水平方向稱為「左右方向」。 Hereinafter, the arrangement direction of the indexer block 10 and the processing block 20 is referred to as the "front-back direction." Furthermore, the horizontal direction perpendicular to the front-back direction is referred to as the "left-right direction."

索引器區塊10係用以自外部搬入處理前的基板W,並且將處理後的基板W朝外部搬出之部位。如圖1所示,索引器區塊10具有複數個(例如4個)載體載置部11及第1搬送部12。複數個載體載置部11沿左右方向配置。於各載體載置部11可設置收容複數片基板W的載體C。載體C例如可使用前開式晶圓傳送盒(FOUP,Front Opening Unified Pod)。 The indexer block 10 is used to load unprocessed substrates W from the outside and unload processed substrates W from the outside. As shown in Figure 1, the indexer block 10 includes a plurality (e.g., four) of carrier placement sections 11 and a first transfer section 12. The plurality of carrier placement sections 11 are arranged in a horizontal direction. Each carrier placement section 11 can be equipped with a carrier C for accommodating a plurality of substrates W. For example, a front-opening unified pod (FOUP) can be used as the carrier C.

第1搬送部12位於複數個載體載置部11與處理區塊20之間。第1搬送部12具有沿左右方向延伸之第1搬送路徑121、及設置於第1搬送路徑121之第1搬送機器人122。第1搬送機器人122沿著第1搬送路徑121可於左右方向上移動。 The first transport unit 12 is located between the plurality of carrier loading units 11 and the processing block 20. The first transport unit 12 includes a first transport path 121 extending horizontally, and a first transport robot 122 disposed along the first transport path 121. The first transport robot 122 is movable horizontally along the first transport path 121.

第1搬送機器人122具有保持基板W的手部、及使手部移動的臂部。第1搬送機器人122於載體C與後述之緩衝區21之間搬送基板W。即,第1搬送機器人122自載體C取出處理前的基板W,朝緩衝區21搬送。 此外,第1搬送機器人122自緩衝區21取出處理後的基板W,朝載體C搬送。 The first transfer robot 122 has a hand that holds the substrate W and an arm that moves the hand. The first transfer robot 122 transports substrates W between the carrier C and the buffer area 21 (described below). Specifically, the first transfer robot 122 removes pre-processed substrates W from the carrier C and transports them to the buffer area 21. Also, the first transfer robot 122 removes processed substrates W from the buffer area 21 and transports them to the carrier C.

處理區塊20係用以對自索引器區塊10供給之複數片基板W進行處理之部位。如圖1所示,處理區塊20包含緩衝區21、第2搬送部22、及複數個處理單元23。緩衝區21係於第1搬送部12與第2搬送部22之間暫時保管基板W之單元。緩衝區21可同時收容複數片基板W。 The processing block 20 processes multiple substrates W supplied from the indexer block 10. As shown in Figure 1, the processing block 20 includes a buffer zone 21, a second conveyor 22, and multiple processing units 23. The buffer zone 21 temporarily stores substrates W between the first conveyor 12 and the second conveyor 22. The buffer zone 21 can accommodate multiple substrates W simultaneously.

第2搬送部22具有沿前後方向延伸之第2搬送路徑221、及設置於第2搬送路徑221之第2搬送機器人222。第2搬送機器人222沿著第2搬送路徑221可於前後方向上移動。第2搬送機器人222於緩衝區21與複數個處理單元23之間搬送基板W。即,第2搬送機器人222自緩衝區21取出處理前的基板W,朝處理單元23搬送。此外,第2搬送機器人222自處理單元23取出處理後的基板W,朝緩衝區21搬送。 The second transport unit 22 includes a second transport path 221 extending in the front-to-back direction, and a second transport robot 222 mounted on the second transport path 221. The second transport robot 222 is movable in the front-to-back direction along the second transport path 221. The second transport robot 222 transports substrates W between the buffer area 21 and a plurality of processing units 23. Specifically, the second transport robot 222 removes pre-processed substrates W from the buffer area 21 and transports them to the processing units 23. Furthermore, the second transport robot 222 removes processed substrates W from the processing units 23 and transports them to the buffer area 21.

此外,處理區塊20亦可具有2個或多於2個的第2搬送部22。例如,亦可於上下方向多層地設置第2搬送路徑221,且於各第2搬送路徑221設置第2搬送機器人222。 Furthermore, the processing block 20 may also have two or more second transport units 22. For example, second transport paths 221 may be arranged in multiple layers in the vertical direction, and a second transport robot 222 may be installed on each second transport path 221.

處理單元23係一片一片地對基板W進行處理之所謂單片式的處理部。複數個處理單元23被配置於第2搬送路徑221的左右兩側。於圖1的例中,於第2搬送路徑221的左側配置有2個處理單元23,且於第2搬送路徑221的右側配置有2個處理單元23。但是,其等複數個處理單元23亦可於高度方向多層地設置。複數片基板W於各處理單元23中同時被處理。 The processing units 23 are so-called single-wafer processing units that process substrates W one by one. Multiple processing units 23 are arranged on both sides of the second transport path 221. In the example shown in Figure 1 , two processing units 23 are arranged on the left side of the second transport path 221, and two processing units 23 are arranged on the right side of the second transport path 221. However, these multiple processing units 23 may also be arranged in multiple levels in the vertical direction. Multiple substrates W are processed simultaneously in each processing unit 23.

<2.處理單元之構成> <2. Composition of the processing unit>

接著,對處理單元23的詳細構成進行說明。以下,對基板處理裝置1具有之複數個處理單元23中的一個進行說明,但其他處理單元23亦具有相同之構成。 Next, the detailed structure of the processing unit 23 will be described. Below, one of the multiple processing units 23 included in the substrate processing apparatus 1 will be described, but the other processing units 23 also have the same structure.

圖2為處理單元23的平面圖。圖3為處理單元23的縱剖面圖。處理單元23係利用處理液對矽晶圓、即基板W進行處理之單元。如圖2及圖3所示,處理單元23具備有處理室30、保持部40、旋轉機構50、處理液供給部60、杯體70、攝像部80、及控制部90。 Figure 2 is a plan view of processing unit 23. Figure 3 is a longitudinal cross-sectional view of processing unit 23. Processing unit 23 processes silicon wafers, or substrates W, using a processing liquid. As shown in Figures 2 and 3, processing unit 23 includes a processing chamber 30, a holding unit 40, a rotating mechanism 50, a processing liquid supply unit 60, a cup 70, an imaging unit 80, and a control unit 90.

處理室30係形成處理空間31之框體,處理空間31係用以處理基板W之單一封閉空間。處理室30具有劃分處理空間31與外部空間的隔壁32。隔壁32具有包圍處理空間31側部之側壁321、覆蓋處理空間31上部之頂板部322、及覆蓋處理空間31下部之底板部323。保持部40、旋轉機構50、處理液供給部60、杯體70、及後述之第1反射鏡81,係被收容於處理室30的內部。 The processing chamber 30 is a frame that forms a processing space 31, a single enclosed space for processing substrates W. The processing chamber 30 has a partition wall 32 that separates the processing space 31 from the outside. The partition wall 32 includes side walls 321 surrounding the sides of the processing space 31, a ceiling 322 covering the top of the processing space 31, and a bottom 323 covering the bottom of the processing space 31. The holding unit 40, rotating mechanism 50, processing liquid supply unit 60, cup 70, and a first reflective mirror 81 (described later) are housed within the processing chamber 30.

於側壁321中,面向第2搬送路徑221之部分,設置有用以朝處理室30內搬入基板W及自處理室30內搬出基板W的搬入搬出口、及開閉搬入搬出口的閘門(省略圖示)。此外,處理室30於側壁321的一部分具有窗部33。窗部33由聚氯乙烯等透明之樹脂或玻璃所形成。側壁321與窗部33的邊界被無縫隙地密封。 The portion of the sidewall 321 facing the second transport path 221 is provided with a loading/unloading port for loading and unloading substrates W into and out of the processing chamber 30, as well as a gate (not shown) for opening and closing the loading/unloading port. Furthermore, the processing chamber 30 has a window 33 in a portion of the sidewall 321. The window 33 is formed of a transparent resin such as polyvinyl chloride or glass. The boundary between the sidewall 321 and the window 33 is seamlessly sealed.

此外,如圖3所示,處理室30具有風扇過濾器單元(FFU)34。風扇過濾器單元34被設置於頂板部322。風扇過濾器單元34具有HEPA過濾器等的集塵過濾器、及使產生氣流的風扇。當使風扇過濾器單元34動作,則設置有基板處理裝置1之無塵室內的空氣被取入風扇過濾器單元34,藉由集塵過濾器進行潔淨化,而朝處理室30內的處理空間31供給。藉此,於處理室30內的處理空間31形成有潔淨化空氣的下降氣流。 As shown in Figure 3, the processing chamber 30 includes a fan filter unit (FFU) 34. The FFU 34 is mounted on the ceiling 322. The FFU 34 includes a dust filter, such as a HEPA filter, and a fan that generates airflow. When the FFU 34 is activated, air from the clean room where the substrate processing apparatus 1 is located is drawn into the FFU 34, purified by the dust filter, and then supplied to the processing space 31 within the processing chamber 30. This creates a downward flow of cleaned air within the processing space 31 within the processing chamber 30.

此外,於側壁321下部的一部分連接有排氣管道35。自風扇過濾器單元34被供給之空氣,於處理室30的內部形成下降氣流之後,通過排氣管道35朝處理室30的外部被排出。 Furthermore, an exhaust duct 35 is connected to a portion of the lower portion of the sidewall 321. Air supplied from the fan filter unit 34 forms a downward flow within the processing chamber 30 and is then exhausted to the outside of the processing chamber 30 through the exhaust duct 35.

保持部40係於處理室30的內部以水平姿勢保持基板W之機構。即,保持部40係以法線朝向鉛垂方向之姿勢保持基板W之機構。如圖2及圖3所示,保持部40具有圓板狀的旋轉基座41、及複數個卡盤銷42。複數個卡盤銷42係以等角度間隔設置於旋轉基座41上表面的外周部。基板W係在形成有圖案之被處理面朝向上側的狀態下,被複數個卡盤銷42所保持。各卡盤銷42被接觸至基板W周緣部的下表面及外周端面。然後,各卡盤銷42係於自旋轉基座41上表面起隔著微小空隙且上方的位置,對基板W進行支撐。 The holding unit 40 holds the substrate W in a horizontal position within the processing chamber 30. Specifically, the holding unit 40 holds the substrate W with its normal oriented in the vertical direction. As shown in Figures 2 and 3, the holding unit 40 includes a circular rotating base 41 and a plurality of chuck pins 42. The chuck pins 42 are arranged at equal angular intervals on the outer periphery of the top surface of the rotating base 41. The substrate W is held by the chuck pins 42 with the patterned surface facing upward. Each chuck pin 42 contacts the lower surface and outer edge of the substrate W. The chuck pins 42 support the substrate W above the top surface of the rotating base 41, separated by a slight gap.

於旋轉基座41內部,設置有用以切換複數個卡盤銷42的位置之卡盤銷切換機構43。卡盤銷切換機構43將複數個卡盤銷42在保持位置與解除位置之間進行切換。此處,保持位置係指保持基板W的位置。此外,解除位置係指解除基板W之保持的位置。 A chuck pin switching mechanism 43 is installed within the rotating base 41 to switch the positions of the chuck pins 42. The chuck pin switching mechanism 43 switches the chuck pins 42 between a holding position and a release position. Here, the holding position refers to a position that holds the substrate W. Furthermore, the release position refers to a position where the substrate W is no longer held.

旋轉機構50係用以使保持部40旋轉之機構。旋轉機構50被收容於設置在旋轉基座41下方之馬達罩51內部。如圖3中虛線所示,旋轉機構50具有旋轉馬達52、及支撐軸53。支撐軸53沿鉛垂方向延伸,其下端部與旋轉馬達52相連接,並且上端部被固定於旋轉基座41下表面的中央。當使旋轉馬達52驅動,則支撐軸53以通過其軸心之旋轉軸530為中心進行旋轉。然後,保持部40及保持於保持部40之基板W亦與支撐軸53一起地,以旋轉軸530為中心進行旋轉。 The rotating mechanism 50 is used to rotate the holding portion 40. It is housed within a motor housing 51 located below the rotating base 41. As shown by the dashed line in Figure 3, the rotating mechanism 50 includes a rotating motor 52 and a support shaft 53. The support shaft 53 extends vertically, with its lower end connected to the rotating motor 52 and its upper end fixed to the center of the lower surface of the rotating base 41. When the rotating motor 52 is driven, the support shaft 53 rotates about a rotation axis 530 passing through its axis. Consequently, the holding portion 40 and the substrate W held therein also rotate along with the support shaft 53 about the rotation axis 530.

處理液供給部60係將處理液供給至保持部40保持之基板W上表面之機構。處理液供給部60具有吐出噴嘴61。如圖2及圖3所示, 吐出噴嘴61具有噴嘴臂611、噴嘴頭612、及噴嘴馬達613。噴嘴頭612被設置於噴嘴臂611的前端。噴嘴臂611藉由噴嘴馬達613的驅動,而以噴嘴臂611基端部為中心沿水平方向轉動。藉此,其可使噴嘴頭612於保持部40所保持之基板W上方的處理位置(圖2中二點鏈線的位置)、與較杯體70更靠外側的退避位置(圖2中實線的位置)之間移動。 The processing liquid supply unit 60 supplies processing liquid to the upper surface of the substrate W held by the holding unit 40. The processing liquid supply unit 60 includes a discharge nozzle 61. As shown in Figures 2 and 3, the discharge nozzle 61 includes a nozzle arm 611, a nozzle head 612, and a nozzle motor 613. The nozzle head 612 is located at the tip of the nozzle arm 611. The nozzle motor 613 drives the nozzle arm 611 to rotate horizontally around the base of the nozzle arm 611. This allows the nozzle head 612 to move between a processing position above the substrate W held by the holding unit 40 (the position indicated by the two-dot chain in Figure 2) and a retracted position further outward from the cup 70 (the position indicated by the solid line in Figure 2).

圖4為示意表示連接至噴嘴頭612之供液部的圖。噴嘴頭612係經由配管615而與貯存有處理液的供液源614連接。於配管615的路徑上,設置有泵616及閥617。在將噴嘴頭612配置於處理位置的狀態下,當將閥617開放並且使泵616動作,則自供液源614通過配管615而將處理液供給至噴嘴頭612。然後,自噴嘴頭612朝向基板W的上表面,吐出處理液。 Figure 4 schematically illustrates the liquid supply unit connected to the nozzle head 612. The nozzle head 612 is connected to a liquid supply source 614, which stores the processing liquid, via a pipe 615. A pump 616 and a valve 617 are installed along the pipe 615. When the nozzle head 612 is positioned at the processing position, valve 617 is opened and pump 616 is activated. This causes the processing liquid to be supplied from the liquid supply source 614 through the pipe 615 to the nozzle head 612. The processing liquid is then discharged from the nozzle head 612 toward the top surface of the substrate W.

處理單元23係在藉由旋轉機構50使基板W旋轉的狀態下,自噴嘴頭612朝基板W上表面的中央,吐出處理液。處理液藉由基板W的旋轉而產生之離心力,自基板W的中央朝周緣部擴散。藉此,於基板W的上表面,以形成處理液的液膜。 The processing unit 23 discharges a processing liquid from the nozzle head 612 toward the center of the top surface of the substrate W while the substrate W is rotated by the rotation mechanism 50. The centrifugal force generated by the rotation of the substrate W causes the processing liquid to spread from the center toward the periphery of the substrate W, thereby forming a film of processing liquid on the top surface of the substrate W.

處理液例如可使用DHF清洗液(稀氟酸)、SPM清洗液(硫酸與過氧化氫水的混合液)、SC-1清洗液(氨水、過氧化氫水、及純水的混合液)、SC-2清洗液(鹽酸、過氧化氫水、及純水的混合液)、或純水(去離子水)等。但是,處理液的種類並無限制,亦可使用上述以外的處理液。 Examples of treatment liquids include DHF (dilute hydrofluoric acid), SPM (a mixture of sulfuric acid and hydrogen peroxide), SC-1 (a mixture of ammonia, hydrogen peroxide, and pure water), SC-2 (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), or pure water (deionized water). However, the type of treatment liquid is not limited, and treatment liquids other than those listed above may also be used.

再者,亦可於1個處理單元23設置複數個吐出噴嘴61。此外,處理單元23亦可進而具備有朝向基板W的下表面供給處理液之噴嘴。 Furthermore, a plurality of discharge nozzles 61 may be provided in one processing unit 23. Furthermore, the processing unit 23 may further include a nozzle for supplying the processing liquid toward the lower surface of the substrate W.

杯體70係收集使用後的處理液之機構。如圖3所示,杯體70具有內杯體71、中杯體72、及外杯體73。內杯體71具有圍繞保持部40之圓環狀的第1導引板710。中杯體72具有位於第1導引板710的外側且上 側之圓環狀的第2導引板720。外杯體73具有位於第2導引板720的外側且上側之圓環狀的第3導引板730。 The cup 70 collects the treated liquid after use. As shown in Figure 3, the cup 70 comprises an inner cup 71, a middle cup 72, and an outer cup 73. The inner cup 71 has a first annular guide plate 710 surrounding the retaining portion 40. The middle cup 72 has a second annular guide plate 720 located outside and above the first guide plate 710. The outer cup 73 has a third annular guide plate 730 located outside and above the second guide plate 720.

內杯體71、中杯體72、及外杯體73係可藉由省略圖示之升降機構而相互獨立地升降移動。當處理液供給部60對基板W供給處理液時,第1導引板710、第2導引板720、及第3導引板730中的至少任一個包圍保持部40所保持之基板W。 The inner cup 71, middle cup 72, and outer cup 73 can be independently raised and lowered by a lifting mechanism (not shown). When the processing liquid supply unit 60 supplies processing liquid to the substrate W, at least one of the first guide plate 710, the second guide plate 720, and the third guide plate 730 surrounds the substrate W held by the holding unit 40.

內杯體71的底部擴展至中杯體72及外杯體73的下方。並且,於該底部的上表面,自內側起依順序設置有第1排液槽711、第2排液槽712、及第3排液槽713。 The bottom of the inner cup 71 extends below the middle cup 72 and outer cup 73. Furthermore, on the upper surface of the bottom, a first drain groove 711, a second drain groove 712, and a third drain groove 713 are provided in order from the inside.

自處理液供給部60的噴嘴頭612吐出之處理液,在基板W的上表面形成液膜後,藉由基板W的旋轉而產生之離心力,朝外側飛散。然後,自基板W飛散之處理液,藉由第1導引板710、第2導引板720、及第3導引板730的任一個收集。被第1導引板710所收集之處理液,通過第1排液槽711朝處理單元23的外部排出。被第2導引板720所收集之處理液,通過第2排液槽712朝處理單元23的外部排出。被第3導引板730所收集之處理液,通過第3排液槽713朝處理單元23的外部排出。 The processing liquid ejected from the nozzle head 612 of the processing liquid supply unit 60 forms a liquid film on the upper surface of the substrate W. The liquid is then scattered outward by the centrifugal force generated by the rotation of the substrate W. The processing liquid scattered from the substrate W is then collected by one of the first guide plate 710, the second guide plate 720, and the third guide plate 730. The processing liquid collected by the first guide plate 710 is discharged outside the processing unit 23 through the first drain trough 711. The processing liquid collected by the second guide plate 720 is discharged outside the processing unit 23 through the second drain trough 712. The processing liquid collected by the third guide plate 730 is discharged outside the processing unit 23 through the third drain trough 713.

如此,該處理單元23具有複數個處理液的排出路徑。因此,其可按種類分別回收供給至基板W之處理液。因此,其亦可根據各處理液的性質分別對回收之處理液的廢棄或再生處理。 Thus, the processing unit 23 has multiple processing liquid discharge paths. Therefore, it can recover the processing liquid supplied to the substrate W separately by type. Therefore, it can also dispose of or recycle the recovered processing liquid according to the properties of each processing liquid.

攝像部80係對藉由處理液在處理中的基板W周緣部進行攝影之機構。如圖2及圖3所示,攝像部80具有第1反射鏡81、半反射鏡82、照明部83、及相機84。 The imaging unit 80 is a mechanism for capturing images of the periphery of a substrate W being processed by a processing liquid. As shown in Figures 2 and 3 , the imaging unit 80 includes a first reflecting mirror 81, a semi-reflecting mirror 82, an illumination unit 83, and a camera 84.

第1反射鏡81位於處理室30的內部。第1反射鏡81被配置於保持部40所保持之基板W周緣部的鉛垂上方。此外,第1反射鏡81被配 置於與窗部33相同的高度。第1反射鏡81係以相對於鉛垂方向及水平方向呈大致45°的角度配置,以使自基板W周緣部朝鉛垂上方行進的光朝向窗部33反射至水平方向。 The first reflective mirror 81 is located within the processing chamber 30. It is positioned vertically above the periphery of the substrate W held by the holder 40. Furthermore, the first reflective mirror 81 is positioned at the same height as the window 33. The first reflective mirror 81 is positioned at an angle of approximately 45° with respect to both the vertical and horizontal directions to reflect light traveling vertically upward from the periphery of the substrate W toward the window 33 and then horizontally.

第1反射鏡81被配置於處理室30內的處理空間31。因此,當將反射面使用銀、鋁、鐵或銅等金屬的鏡用作為第1反射鏡81時,則存在有因金屬的微粒而污染基板W之虞。因此,第1反射鏡81例如可使用矽晶圓。由於矽晶圓具有鏡面,因此可被用作反射鏡。此外,若第1反射鏡81使用矽晶圓,則可抑制起因於第1反射鏡81之微粒的產生。 The first reflective mirror 81 is located in the processing space 31 within the processing chamber 30. Therefore, if a mirror with a reflective surface made of a metal such as silver, aluminum, iron, or copper is used as the first reflective mirror 81, there is a risk of contamination of the substrate W by metal particles. Therefore, a silicon wafer, for example, can be used as the first reflective mirror 81. Since silicon wafers have a mirror surface, they can be used as a reflective mirror. Furthermore, using a silicon wafer as the first reflective mirror 81 can suppress the generation of particles caused by the first reflective mirror 81.

半反射鏡82位於處理室30的外部。半反射鏡82被配置於靠近窗部33外側的位置。第1反射鏡81、窗部33、及半反射鏡82係沿水平方向排列成一直線。半反射鏡82將連結第1反射鏡81與半反射鏡82之光路L0分岐為2個光路L1、L2。 The semi-reflective mirror 82 is located outside the processing chamber 30. It is positioned near the outside of the window 33. The first mirror 81, the window 33, and the semi-reflective mirror 82 are aligned horizontally. The semi-reflective mirror 82 splits the optical path L0 connecting the first mirror 81 and the semi-reflective mirror 82 into two optical paths, L1 and L2.

照明部83位於處理室30的外部。照明部83被配置於藉由半反射鏡82分岐之2個光路L1、L2中一者的光路L1上。照明部83係對基板W周緣部照射用以攝影的照明光之裝置。照明部83具有LED等光源。當藉由相機84進行攝影時,照明部83的光源發光。藉此,其自照明部83朝向半反射鏡82照射照明光。照明光藉由半反射鏡82反射,且穿透過窗部33朝向處理室30的內部入射。此外,於處理室30的內部,照明光藉由第1反射鏡81被反射,而照射於保持部40所保持之基板W周緣部。 The illumination unit 83 is located outside the processing chamber 30. It is positioned on optical path L1, one of the two optical paths L1 and L2 branched by the semi-reflective mirror 82. The illumination unit 83 irradiates the periphery of the substrate W with illumination light for imaging. The illumination unit 83 includes a light source such as an LED. When the camera 84 is capturing images, the light source of the illumination unit 83 emits light. This light then irradiates the semi-reflective mirror 82 from the illumination unit 83. The illumination light is reflected by the semi-reflective mirror 82, passes through the window 33, and enters the processing chamber 30. Furthermore, within the processing chamber 30, the illumination light is reflected by the first reflective mirror 81 and irradiates the periphery of the substrate W held by the holding unit 40.

相機84位於處理室30的外部。相機84被配置於藉由半反射鏡82分岐之2個光路L1、L2中另一者的光路L2上。相機84具有CCD或CMOS等攝像元件。當進行自噴嘴頭612向基板W表面吐出處理液之動作時,其一面自照明部83照射照明光,一面藉由相機84進行攝影。基板W上表面的周緣部中所反射之照明光,係於第1反射鏡81中進行反射,且穿 透窗部33及半反射鏡82而朝向相機84入射。藉此,相機84可取得基板W周緣部的圖像作為攝影資料D。所取得之攝影資料D被自相機84朝向控制部90輸出。 Camera 84 is located outside the processing chamber 30. It is positioned on optical path L2, the other of the two optical paths L1 and L2 branched by the half mirror 82. Camera 84 includes an imaging element such as a CCD or CMOS. When the nozzle head 612 discharges processing liquid onto the surface of the substrate W, illumination light is emitted from the illumination unit 83 while the camera 84 captures the image. Illumination light reflected from the periphery of the upper surface of the substrate W is reflected by the first reflection mirror 81, passes through the window 33 and the half mirror 82, and enters the camera 84. The camera 84 then captures an image of the periphery of the substrate W as image data D. The captured image data D is output from the camera 84 to the control unit 90.

於相機84,例如為使用事件相機。一般動畫攝影用的相機(圖幀相機(frame-based camera))輸出按時間順序排列之攝影資料,該攝影資料係具有複數個畫素的亮度值資訊之圖幀圖像。相對於此,事件相機係輸出攝影資料D(事件資料),該攝影資料D僅由亮度值有變化之畫素的資訊所構成。因此,自事件相機所輸出之攝影資料D的資訊量係較自圖幀相機所輸出之攝影資料的資訊量小。因此,若使用事件相機,則較使用圖幀相機,更可高速地進行攝影資料D的取得及傳送。此外,事件相機可以較圖幀相機中圖幀圖像的間隔更短的時間間隔,而取得攝影資料D。例如,事件相機可每隔數微秒取得攝影資料D。因此,若使用事件相機,則可拍攝基板W周緣部的高速動作。 In camera 84, for example, an event camera is used. A general camera used for motion picture photography (frame-based camera) outputs photographic data arranged in chronological order, and the photographic data is a frame image having brightness value information of a plurality of pixels. In contrast, an event camera outputs photographic data D (event data), which is composed only of information of pixels whose brightness values have changed. Therefore, the amount of information of the photographic data D output from the event camera is smaller than the amount of information of the photographic data output from the frame camera. Therefore, if an event camera is used, the acquisition and transmission of the photographic data D can be performed at a higher speed than when a frame camera is used. Furthermore, an event camera can acquire image data D at shorter intervals than the frame intervals of a frame camera. For example, an event camera can acquire image data D every several microseconds. Therefore, using an event camera can capture high-speed motion around the periphery of a substrate W.

如上述,半反射鏡82、照明部83、及相機84係被配置於處理室30的外側。即,半反射鏡82、照明部83、及相機84係被配置於處理空間31的外側,該處理空間31係配置有基板W之單一封閉空間。若為此一構成,則可防止半反射鏡82、照明部83、及相機84受處理液的影響而腐蝕。此外,其可防止來自半反射鏡82、照明部83、及相機84產生之微粒附著於處理空間31內的基板W。 As described above, the half mirror 82, lighting unit 83, and camera 84 are positioned outside the processing chamber 30. Specifically, the half mirror 82, lighting unit 83, and camera 84 are positioned outside the processing space 31, which is a single, enclosed space where substrates W are positioned. This configuration prevents corrosion of the half mirror 82, lighting unit 83, and camera 84 from the effects of the processing liquid. Furthermore, it prevents particles generated by the half mirror 82, lighting unit 83, and camera 84 from adhering to substrates W within the processing space 31.

半反射鏡82、照明部83、及相機84,既可配置於第2搬送路徑221,亦可配置於處理區塊20的外側。但是,若將半反射鏡82、照明部83及相機84配置於第2搬送路徑221,則可將攝像部80全部收納於處理區塊20外壁的內側。因此,其可減少基板處理裝置1的覆蓋區(footprint)。 The half mirror 82, lighting unit 83, and camera 84 can be located either within the second transport path 221 or outside the processing block 20. However, if the half mirror 82, lighting unit 83, and camera 84 are located within the second transport path 221, the entire imaging unit 80 can be housed inside the outer wall of the processing block 20. This reduces the footprint of the substrate processing apparatus 1.

控制部90係對處理單元23的上述各部進行控制之資訊處理裝置。圖5為處理單元23的控制方塊圖。如圖5中示意性所表示,控制部90為由電腦所構成,該電腦具有CPU等處理器91、RAM等記憶體92、及硬碟驅動器等記憶部93。 The control unit 90 is an information processing device that controls the aforementioned components of the processing unit 23. Figure 5 is a control block diagram of the processing unit 23. As schematically shown in Figure 5, the control unit 90 is composed of a computer having a processor 91 such as a CPU, a memory 92 such as RAM, and a storage unit 93 such as a hard drive.

於記憶部93內,記憶有控制程式P1及檢查程式P2。控制程式P1係為了執行處理單元23中基板W的處理而用以對處理單元23的各部進行動作控制的電腦程式。檢查程式P2係用以根據自相機84獲得之攝影資料D監視基板W之處理狀態的電腦程式。 The memory unit 93 stores a control program P1 and an inspection program P2. The control program P1 is a computer program used to control the operation of various components of the processing unit 23 in order to execute the processing of substrates W in the processing unit 23. The inspection program P2 is a computer program used to monitor the processing status of substrates W based on the image data D obtained from the camera 84.

如圖5所示,控制部90分別藉由有線或無線而與上述之風扇過濾器單元34、卡盤銷切換機構43、旋轉馬達52、噴嘴馬達613、泵616、閥617、杯體70的升降機構、照明部83、及相機84可通信地連接。此外,控制部90還與液晶顯示器等顯示部94電性連接。控制部90依照記憶部93所記憶之控制程式P1及檢查程式P2,對上述之各部進行動作控制。藉此,以進行後述之步驟S1~S6及步驟S31~S35的處理。 As shown in Figure 5, the control unit 90 is communicatively connected to the fan filter unit 34, chuck pin switching mechanism 43, rotary motor 52, nozzle motor 613, pump 616, valve 617, cup 70 lifting mechanism, lighting unit 83, and camera 84, via wired or wireless communication. Furthermore, the control unit 90 is electrically connected to a display unit 94, such as a liquid crystal display. The control unit 90 controls the operation of each of the aforementioned components according to the control program P1 and the test program P2 stored in the memory unit 93. This allows the processing of steps S1-S6 and steps S31-S35, described below, to be performed.

<3.基板處理裝置的動作> <3. Operation of the Substrate Processing Device>

接著,對上述處理單元23中基板W的處理進行說明。圖6為表示基板W的處理順序的流程圖。 Next, the processing of the substrate W in the processing unit 23 will be described. FIG6 is a flow chart showing the processing sequence of the substrate W.

當處理單元23中對基板W進行處理時,首先,第2搬送機器人222將成為處理對象之基板W搬入處理室30內(步驟S1)。搬入處理室30內之基板W,藉由保持部40的複數個卡盤銷42而被水平保持。然後,藉由旋轉機構50驅動旋轉馬達52,以使基板W開始旋轉(步驟S2)。具體而言,支撐軸53、旋轉基座41、複數個卡盤銷42、及保持於卡盤銷42之基板W係以旋轉軸530為中心進行旋轉。 When processing a substrate W in the processing unit 23, the second transfer robot 222 first loads the substrate W into the processing chamber 30 (step S1). Once loaded into the processing chamber 30, the substrate W is held horizontally by the plurality of chuck pins 42 of the holding portion 40. The rotation mechanism 50 then drives the rotation motor 52, causing the substrate W to begin rotating (step S2). Specifically, the support shaft 53, the rotation base 41, the plurality of chuck pins 42, and the substrate W held by the chuck pins 42 rotate about the rotation shaft 530.

接著,處理液供給部60進行朝向基板W之處理液的供給(步驟S3)。於步驟S3中,藉由噴嘴馬達613的驅動,噴嘴頭612朝與基板W的上表面對向之處理位置移動。然後,來自配置於處理位置的噴嘴頭612朝向旋轉之基板W的上表面吐出處理液。處理液自基板W上表面的中央部朝向周緣部擴散,以形成覆蓋基板W上表面的液膜。 Next, the processing liquid supply unit 60 supplies the processing liquid toward the substrate W (step S3). In step S3, the nozzle motor 613 drives the nozzle head 612 toward the processing position facing the top surface of the substrate W. The nozzle head 612, positioned at the processing position, then discharges the processing liquid toward the top surface of the rotating substrate W. The processing liquid diffuses from the center of the top surface of the substrate W toward the periphery, forming a liquid film covering the top surface of the substrate W.

再者,於步驟S3中,亦可一面自吐出噴嘴61吐出處理液,一面使吐出噴嘴61於處理位置上沿水平方向擺動。 Furthermore, in step S3, the discharge nozzle 61 may be swung horizontally at the processing position while discharging the processing liquid from the discharge nozzle 61.

當完成既定時間之處理液的供給,則處理液供給部60停止自噴嘴頭612吐出處理液。然後,藉由噴嘴馬達613的驅動,噴嘴頭612自處理位置朝向退避位置移動。然後,旋轉機構50將旋轉馬達52的轉速提升,使基板W的旋轉高速化。於是,於基板W上表面形成液膜之處理液被朝向基板W的外側甩落。藉此,可將基板W進行乾燥(步驟S4)。 When the prescribed supply of processing liquid is complete, the processing liquid supply unit 60 stops discharging the processing liquid from the nozzle head 612. The nozzle motor 613 then drives the nozzle head 612 from the processing position to the retreat position. The rotation mechanism 50 then increases the rotational speed of the rotation motor 52, accelerating the rotation of the substrate W. Consequently, the processing liquid film formed on the upper surface of the substrate W is flung toward the outer side of the substrate W, thereby drying the substrate W (step S4).

當結束基板W的乾燥處理,則旋轉機構50使旋轉馬達52停止,以停止基板W的旋轉(步驟S5)。然後,保持部40將藉由複數個卡盤銷42對基板W的保持予以解除。然後,第2搬送機器人222將處理後的基板W自保持部40取出,並朝處理室30的外部搬出(步驟S6)。 When the drying process of the substrate W is complete, the rotation mechanism 50 stops the rotation motor 52, halting the rotation of the substrate W (step S5). The holder 40 then releases the substrate W from its grip using the plurality of chuck pins 42. The second transfer robot 222 then removes the processed substrate W from the holder 40 and carries it out of the processing chamber 30 (step S6).

各處理單元23依順序對搬送之複數片基板W分別執行上述步驟S1~S6的處理。 Each processing unit 23 sequentially performs the above-mentioned steps S1 to S6 on the plurality of substrates W being transported.

<4.有關覆蓋間斷的監視> <4. Regarding surveillance with intermittent coverage>

於上述步驟S3的處理中,自噴嘴頭612朝向基板W上表面的中央部吐出之處理液,藉由基板W的旋轉而朝周緣部擴散。此時,形成於基板W上表面的液膜隨著自基板W中央部朝周緣部擴散而逐漸變薄。因此,於步驟S3的處理期間,於基板W上表面的周緣部,其存在有因液膜中斷而局部 露出基板W的上表面的情況。該現象被稱為「覆蓋間斷」。當產生覆蓋間斷,則於基板W的上表面利用處理液之處理變得不均勻。 During the processing in step S3, the processing liquid ejected from the nozzle head 612 toward the center of the top surface of substrate W is diffused toward the periphery due to the rotation of substrate W. The liquid film formed on the top surface of substrate W gradually thins as it diffuses from the center toward the periphery. Therefore, during the processing in step S3, the liquid film may be interrupted at the periphery of substrate W, partially exposing the top surface of substrate W. This phenomenon is known as "coverage discontinuity." When coverage discontinuity occurs, the processing liquid is applied unevenly to the top surface of substrate W.

因此,控制部90具有:一面自處理液供給部60將處理液供給至基板W的上表面,一面根據自相機84所獲得之攝影資料D監視覆蓋間斷的產生狀況,如此之功能。以下對該監視處理參照圖7的流程圖予以說明。 Therefore, the control unit 90 has the function of supplying the processing liquid from the processing liquid supply unit 60 to the upper surface of the substrate W while monitoring the occurrence of coating discontinuities based on the image data D obtained by the camera 84. This monitoring process is described below with reference to the flowchart in Figure 7.

於步驟S3中,控制部90首先判定是否開始自噴嘴頭612吐出處理液(步驟S31)。當未開始處理液的吐出之情況時(步驟S31:否),則繼續等待自噴嘴頭612開始處理液的吐出。然後,當開始處理液的供給時(步驟S31:是),則控制部90開始相機84之攝影(步驟S32)。 In step S3, the control unit 90 first determines whether the nozzle head 612 has started discharging the treatment liquid (step S31). If the treatment liquid has not started discharging (step S31: No), the control unit 90 continues to wait for the nozzle head 612 to start discharging the treatment liquid. Then, if the treatment liquid supply starts (step S31: Yes), the control unit 90 starts imaging with the camera 84 (step S32).

相機84經由半反射鏡82、窗部33、及第1反射鏡81,對保持部40所保持之基板W周緣部進行攝影。此時,對於相機84的視野例如可設為,包含自基板W的外端部起半徑方向中30mm的範圍。相機84將藉由攝影獲得之攝影資料D朝向控制部90輸出。控制部90則取得自相機84逐次輸出之攝影資料D(步驟S33)。 The camera 84 captures the periphery of the substrate W held by the holder 40 via the half mirror 82, the window 33, and the first mirror 81. The field of view of the camera 84 can be set to encompass, for example, a 30 mm radius from the outer edge of the substrate W. The camera 84 outputs the acquired image data D to the control unit 90. The control unit 90 then receives the image data D sequentially output from the camera 84 (step S33).

基板W的周緣部以高速旋轉。因此,當基板W的周緣部產生有覆蓋間斷之情況時,該產生部位也以高速移動。此外,覆蓋間斷產生的時間本身亦有可能非常短。覆蓋間斷之產生時間例如為數毫米級的短時間。然而,若使用事件相機作為相機84,則可以短的時間間隔取得攝影資料D。因此,其可適當地拍攝於基板W周緣部產生之覆蓋間斷。又,自事件相機輸出之攝影資料D,係僅由亮度值有變化之畫素的資訊所構成。因此,控制部90可一面進行基板W的處理一面以高速對攝影資料D進行處理。 The periphery of the substrate W rotates at high speed. Therefore, when coverage discontinuities occur on the periphery of the substrate W, the area where they occur also moves at high speed. Furthermore, the time it takes for a coverage discontinuity to occur can be very short. For example, the time it takes for a coverage discontinuity to occur can be as short as a few millimeters. However, using an event camera as the camera 84 allows for the acquisition of image data D at short intervals. This allows for accurate capture of coverage discontinuities occurring on the periphery of the substrate W. Furthermore, the image data D output from the event camera consists solely of information about pixels experiencing changes in brightness. Therefore, the control unit 90 can process the image data D at high speed while simultaneously processing the substrate W.

控制部90根據來自相機84取得之攝影資料D,檢查覆蓋間斷的產生狀況(步驟S34)。具體而言,當攝影資料D中無亮度值變化之部分的情況時、或者攝影資料D中亮度值有變化之部分不滿足既定條件的情況時,控制部90則判定為未產生覆蓋間斷。此外,於攝影資料D中存在亮度值有變化之部分,且該部分為滿足既定條件的情況時,控制部90則判定為產生有覆蓋間斷。 The control unit 90 checks the presence of cover discontinuities based on the image data D acquired from the camera 84 (step S34). Specifically, if the image data D contains no portions with varying brightness values, or if the portions with varying brightness values do not meet predetermined conditions, the control unit 90 determines that cover discontinuities have not occurred. Alternatively, if the image data D contains portions with varying brightness values that meet predetermined conditions, the control unit 90 determines that cover discontinuities have occurred.

當控制部90判定為未產生覆蓋間斷的情況時(步驟S34:否),一面繼續自噴嘴頭612吐出處理液,一面反復進行步驟S33~S34的檢查處理。 If the control unit 90 determines that no coating interruption has occurred (step S34: No), it continues to discharge the treatment liquid from the nozzle head 612 while repeating the inspection process of steps S33 and S34.

另一方面,當判定為產生有覆蓋間斷的情況時(步驟S34:是),控制部90則輸出警報(步驟S35)。警報的輸出例如可為在顯示部94上顯示訊息、或者亦可為蜂鳴器的鳴聲、燈的點亮等。此外,當判定為產生有覆蓋間斷的情況時,控制部90亦可停止對該基板W的處理。 On the other hand, if it is determined that a coating gap has occurred (step S34: Yes), the control unit 90 outputs an alarm (step S35). The alarm output may be, for example, a message displayed on the display unit 94, a buzzer sound, or the lighting of a lamp. Furthermore, if a coating gap is determined to have occurred, the control unit 90 may also stop processing the substrate W.

如上所述,於該基板處理裝置1中,控制部90使旋轉機構50及處理液供給部60動作,一面將處理液供給至旋轉之基板W上表面,一面藉由相機84拍攝基板W周緣部。藉此,其可拍攝基板W周緣部之覆蓋間斷的產生狀況。 As described above, in the substrate processing apparatus 1 , the controller 90 operates the rotating mechanism 50 and the processing liquid supply unit 60 to supply processing liquid to the upper surface of the rotating substrate W while simultaneously capturing images of the periphery of the substrate W using the camera 84 . This allows the camera to capture the occurrence of coating discontinuities around the periphery of the substrate W.

相機84被配置於處理室30的外部。藉此,其可於處理室30內的處理空間31中,抑制起因於相機84之微粒產生。此外,藉由使用第1反射鏡81,其可自正上方對基板W的周緣部進行攝影。因此,較自斜上方拍攝基板W的情況,其更可將焦點對準於基板W上表面的廣大範圍來進行攝影。此外,藉由自正上方拍攝基板W周緣部,可使基板W周緣部的複數個位置分別與相機84的距離均等地接近。此外,自照明部83照射的照 明光,亦可經由第1反射鏡81自基板W的正上方進行照射。藉此,其可更清晰地拍攝基板W的周緣部。 The camera 84 is positioned outside the processing chamber 30. This helps suppress the generation of particles caused by the camera 84 within the processing space 31 within the processing chamber 30. Furthermore, by using the first reflective mirror 81, the periphery of the substrate W can be photographed from directly above. This allows for a wider range of the substrate W's top surface to be captured with the focus aligned compared to photographing the substrate W from an oblique angle. Furthermore, by photographing the periphery of the substrate W from directly above, multiple locations on the periphery of the substrate W can be placed at an even distance from the camera 84. Furthermore, the illumination light emitted from the illumination unit 83 can also be directed directly above the substrate W via the first reflective mirror 81, enabling clearer images of the periphery of the substrate W.

特別是,如本實施形態的處理單元23,當處理室30上部被設置有風扇過濾器單元34的情況時,其難以於處理室30的上部設置相機84及照明部83。然而,若於處理室30的內部配置第1反射鏡81,則可將相機84及照明部83配置於處理室30的側面,而一面經由第1反射鏡81向基板W的上表面照射照明光,一面自上方對基板W進行攝影。 In particular, when the fan filter unit 34 is installed above the processing chamber 30, as in the processing unit 23 of this embodiment, it is difficult to install the camera 84 and the illumination unit 83 above the processing chamber 30. However, if a first reflective mirror 81 is disposed within the processing chamber 30, the camera 84 and the illumination unit 83 can be positioned on the side of the processing chamber 30. This allows the substrate W to be photographed from above while illuminating the upper surface of the substrate W through the first reflective mirror 81.

此外,如本實施形態之處理單元23,當將杯體70配置於基板W周圍的情況時,其難以自斜上方拍攝基板W周緣部。然而,若於處理室30的內部配置第1反射鏡81,則可將相機84及照明部83配置於處理室30的側面,而一面經由第1反射鏡81向基板W的上表面照射照明光,一面自上方對基板W進行攝影。 Furthermore, when the cup 70 is positioned around the substrate W in the processing unit 23 of this embodiment, it is difficult to capture images of the periphery of the substrate W from an oblique angle. However, if a first reflective mirror 81 is positioned within the processing chamber 30, a camera 84 and an illumination unit 83 can be positioned on the side of the processing chamber 30. This allows the substrate W to be photographed from above while illuminating the upper surface of the substrate W through the first reflective mirror 81.

再者,其可藉由增加自處理液供給部60供給至基板W上表面之處理液的量,以消除覆蓋間斷。然而,當大量使用處理液,則花費在處理液的成本會增加,並且排液對環境造成的負擔會增加。因此,較佳為,將來自處理液供給部60之處理液的供給量設為不產生覆蓋間斷之最小限度的量。於此點上,本實施形態的處理單元23係一面監視覆蓋間斷的產生狀況一面進行處理液的供給。控制部90亦可根據覆蓋間斷的產生狀況,以調節自處理液供給部60朝基板W之處理液的供給量。藉此,其可將適量的處理液供給至基板W的上表面。 Furthermore, the coverage discontinuity can be eliminated by increasing the amount of treatment liquid supplied from the treatment liquid supply section 60 to the upper surface of the substrate W. However, when a large amount of treatment liquid is used, the cost of the treatment liquid increases, and the burden of liquid drainage on the environment increases. Therefore, it is preferable to set the supply amount of treatment liquid from the treatment liquid supply section 60 to the minimum amount that does not produce coverage discontinuity. In this regard, the processing unit 23 of this embodiment supplies the treatment liquid while monitoring the occurrence of coverage discontinuity. The control section 90 can also adjust the supply amount of treatment liquid from the treatment liquid supply section 60 to the substrate W according to the occurrence of coverage discontinuity. This allows an appropriate amount of processing liquid to be supplied to the upper surface of the substrate W.

<5.變形例> <5. Variations>

以上,已對本發明一實施形態進行說明,但本發明不受限上述實施形態。以下,對於各種變形例,以與上述實施形態之差異點為中心進行說明。 While one embodiment of the present invention has been described above, the present invention is not limited to this embodiment. The following describes various variations, focusing on the differences from the above embodiment.

<5-1.第1變形例> <5-1. First variant>

圖8為第1變形例之處理單元23的縱剖面圖。於圖8的示例中,攝像部80具有第2反射鏡85。第2反射鏡85位於處理室30的外部。第2反射鏡85被配置於藉由半反射鏡82分岐之2個光路L1、L2中相機84側的光路L2上。相機84經由第2反射鏡85、半反射鏡82、窗部33、及第1反射鏡81,以拍攝基板W的周緣部。 Figure 8 is a longitudinal cross-sectional view of the processing unit 23 according to the first modification. In the example of Figure 8 , the imaging unit 80 includes a second mirror 85 . The second mirror 85 is located outside the processing chamber 30 . The second mirror 85 is positioned on the optical path L2, on the camera 84 side of the two optical paths L1 and L2 branched by the half mirror 82 . The camera 84 captures the periphery of the substrate W through the second mirror 85 , the half mirror 82 , the window 33 , and the first mirror 81 .

如此,若使用第2反射鏡85,則可提高相機84配置的自由度。此外,由於第2反射鏡85配置於處理室30的外部,因此其可使用在反射面使用銀或鋁的反射率高之反射鏡。即,配置於處理室30內部之第1反射鏡81係使用不易產生微粒的矽晶圓,另一方面,配置於處理室30外部之第2反射鏡85係使用反射率高的銀或鋁的反射鏡。藉此,其可一面抑制基板W的污染,一面清晰地拍攝基板W的周緣部。 Using the second reflective mirror 85 in this manner increases the flexibility of camera 84 placement. Furthermore, since the second reflective mirror 85 is located outside the processing chamber 30, it can use a reflective surface made of silver or aluminum with high reflectivity. Specifically, while the first reflective mirror 81 inside the processing chamber 30 is made of silicon wafers, which are less susceptible to particle generation, the second reflective mirror 85 outside the processing chamber 30 is made of silver or aluminum with high reflectivity. This allows for clear images of the periphery of the substrate W while minimizing contamination of the substrate W.

<5-2.其他變形例> <5-2. Other variations>

於上述實施形態中,攝像部80具有半反射鏡82。若使用半反射鏡82,則可使照明部83之光軸與相機84的光軸一致。然而,攝像部80亦可不具有半反射鏡82。照明部83亦可自稍稍從相機84與第1反射鏡81之間的光路L0偏離的位置照射照明光。 In the above embodiment, the imaging unit 80 includes a half mirror 82. Using the half mirror 82 allows the optical axis of the illumination unit 83 to align with the optical axis of the camera 84. However, the imaging unit 80 does not need to include the half mirror 82. The illumination unit 83 may also emit illumination light from a position slightly offset from the optical path L0 between the camera 84 and the first reflector 81.

此外,於上述實施形態中,係使用矽晶圓作為第1反射鏡81。然而,第1反射鏡81未被限定於矽晶圓。例如,第1反射鏡81亦可為,以透明樹脂將反射面使用銀或鋁之一般反射鏡模製所成者。 In the above embodiment, a silicon wafer is used as the first reflector 81. However, the first reflector 81 is not limited to a silicon wafer. For example, the first reflector 81 may be a conventional reflector having a reflective surface made of silver or aluminum molded with transparent resin.

此外,於上述實施形態中,被配置於處理室30內之第1反射鏡81的數量為1個。然而,被配置於處理室30內之第1反射鏡81的數量亦可為2個或多於2個。並且,相機84亦可經由複數個第1反射鏡81對基板W上表面的周緣部進行攝影。 In the above embodiment, one first reflective mirror 81 is disposed in the processing chamber 30. However, two or more first reflective mirrors 81 may be disposed in the processing chamber 30. Furthermore, the camera 84 may capture the periphery of the upper surface of the substrate W through a plurality of first reflective mirrors 81.

此外,於上述實施形態中,係使用事件相機作為相機84。然而,亦可使用圖幀相機(frame-based camera,分格相機)高速相機以取代事件相機。 Furthermore, in the above embodiment, an event camera is used as camera 84. However, a frame-based camera or a high-speed camera may be used instead of the event camera.

此外,於上述實施形態中,已對控制部90檢查容易於基板W周緣部產生之覆蓋間斷的例子進行說明。然而,控制部90亦可根據自相機84輸出之攝影資料D,以檢查覆蓋間斷以外的事件。 Furthermore, in the above embodiment, the control unit 90 has been described as detecting coverage discontinuities, which are likely to occur around the periphery of the substrate W. However, the control unit 90 can also detect events other than coverage discontinuities based on the image data D output from the camera 84.

此外,其亦可於不產生矛盾之範圍內任意組合上述實施形態或變形例中出現的各要件。 Furthermore, the various elements in the above-mentioned embodiments or variations may be arbitrarily combined within the scope of no contradiction.

23:處理單元 23: Processing unit

30:處理室 30: Processing Room

31:處理空間 31: Processing Space

32:隔壁 32: Next door

33:窗部 33: Window

34:風扇過濾器單元 34: Fan filter unit

35:排氣管道 35: Exhaust duct

40:保持部 40: Maintenance Department

41:旋轉基座 41: Rotating base

42:卡盤銷 42: Chuck pin

43:卡盤銷切換機構 43: Chuck pin switching mechanism

50:旋轉機構 50: Rotating mechanism

51:馬達罩 51: Motor cover

52:旋轉馬達 52: Rotary Motor

53:支撐軸 53: Support shaft

60:處理液供給部 60: Treatment fluid supply unit

61:吐出噴嘴 61: Spit out the nozzle

70:杯體 70: Cup body

71:內杯體 71: Inner cup

72:中杯體 72: Medium cup

73:外杯體 73: Outer cup

80:攝像部 80: Camera Department

81:第1反射鏡 81: 1st Reflector

82:半反射鏡 82: Half-reflective mirror

83:照明部 83:Lighting Department

84:相機 84: Camera

90:控制部 90: Control Department

321:側壁 321: Sidewall

322:頂板部 322: Top plate

323:底板部 323: Bottom plate

530:旋轉軸 530: Rotation axis

611:噴嘴臂 611: Nozzle Arm

612:噴嘴頭 612: Nozzle

710:第1導引板 710: First guide plate

711:第1排液槽 711: 1st drain tank

712:第2排液槽 712: 2nd drain tank

713:第3排液槽 713: 3rd drain tank

720:第2導引板 720: Second guide plate

730:第3導引板 730: 3rd guide plate

D:攝影資料 D:Photographic data

L0:光路 L0: Optical Path

L1:光路 L1: Optical Path

L2:光路 L2: Optical Path

W:基板 W: substrate

Claims (10)

一種基板處理裝置,係藉由處理液對基板進行處理;其具備有: 處理室,其具有隔壁及窗部,上述隔壁劃分對上述基板進行處理之處理空間,上述窗部設置於上述隔壁的一部分; 保持部,其於上述處理室內以水平姿勢保持上述基板; 旋轉機構,其使上述保持部以沿鉛垂方向延伸之旋轉軸為中心進行旋轉; 處理液供給部,其藉由將處理液供給至上述保持部所保持之上述基板的上表面,而於上述基板的上表面形成液膜; 第1反射鏡,其位於上述處理室的內部,且位於上述保持部所保持之上述基板的周緣部上方; 相機,其位於上述處理室的外部,且經由上述窗部及上述第1反射鏡而拍攝上述基板的周緣部;及 控制部,其控制上述旋轉機構、上述處理液供給部、及上述相機; 上述控制部一面使上述旋轉機構及上述處理液供給部動作,一面使上述相機執行攝影。 A substrate processing apparatus processes a substrate using a processing liquid. The apparatus comprises: a processing chamber having a partition wall and a window portion, wherein the partition wall defines a processing space for processing the substrate, and the window portion is provided in a portion of the partition wall; a holding portion for holding the substrate in a horizontal position within the processing chamber; a rotating mechanism for rotating the holding portion about a rotation axis extending in a vertical direction; a processing liquid supply portion for supplying processing liquid to the upper surface of the substrate held by the holding portion to form a liquid film on the upper surface of the substrate; a first reflecting mirror located within the processing chamber and above the periphery of the substrate held by the holding portion; A camera located outside the processing chamber and configured to capture images of the periphery of the substrate through the window and the first reflective mirror; and a control unit configured to control the rotating mechanism, the processing liquid supply unit, and the camera. The control unit controls the camera while operating the rotating mechanism and the processing liquid supply unit. 如請求項1之基板處理裝置,其更具備有: 照明部,其位於上述處理室的外部,且經由上述窗部及上述第1反射鏡而朝向上述基板的周緣部照射光。 The substrate processing apparatus of claim 1 further comprises: An illumination unit located outside the processing chamber and irradiating light toward a peripheral portion of the substrate via the window and the first reflective mirror. 如請求項2之基板處理裝置,其更具備有: 半反射鏡,其位於上述處理室的外部; 於藉由上述半反射鏡分岐之2個光路的一者,被配置有上述照明部, 於藉由上述半反射鏡分岐之2個光路的另一者,被配置有上述相機。 The substrate processing apparatus of claim 2 further comprises: a semi-reflecting mirror located outside the processing chamber; the illumination unit is disposed on one of the two optical paths branched by the semi-reflecting mirror; the camera is disposed on the other of the two optical paths branched by the semi-reflecting mirror. 如請求項1之基板處理裝置,其中, 上述基板為矽晶圓, 上述第1反射鏡亦為矽晶圓。 The substrate processing apparatus of claim 1, wherein: the substrate is a silicon wafer, and the first reflective mirror is also a silicon wafer. 如請求項4之基板處理裝置,其更具備有: 第2反射鏡,其位於上述處理室的外部,且反射面為銀或鋁; 上述相機經由上述第2反射鏡、上述窗部、及上述第1反射鏡而對上述基板的周緣部進行攝影。 The substrate processing apparatus of claim 4 further comprises: a second reflective mirror located outside the processing chamber, the reflective surface of the mirror being silver or aluminum; the camera photographs the periphery of the substrate via the second reflective mirror, the window, and the first reflective mirror. 如請求項1之基板處理裝置,其中, 上述相機係事件相機。 The substrate processing apparatus of claim 1, wherein: the camera is an event camera. 如請求項1之基板處理裝置,其更具備有: 風扇過濾器單元,其設置於上述處理室的上部。 The substrate processing apparatus of claim 1 further comprises: A fan filter unit disposed above the processing chamber. 如請求項1之基板處理裝置,其更具備有: 杯體,其於上述處理室的內部,包圍上述保持部所保持之上述基板。 The substrate processing apparatus of claim 1 further comprises: A cup body, located within the processing chamber and surrounding the substrate held by the holding portion. 如請求項1至8中任一項之基板處理裝置,其中, 上述控制部根據自上述相機獲得的攝影資料,檢查上述基板的上表面之覆蓋間斷的產生狀況。 The substrate processing apparatus of any one of claims 1 to 8, wherein the control unit detects the occurrence of coverage discontinuities on the upper surface of the substrate based on imaging data obtained from the camera. 一種基板處理方法,係藉由處理液對基板進行處理之方法;其實施以下(a)及(b)的處理: (a)於具有對上述基板進行處理之處理空間予以劃分的隔壁之處理室內,一面以沿鉛垂方向延伸的旋轉軸為中心使以水平姿勢所保持之上述基板旋轉,一面將處理液供給至上述基板的上表面,藉此於上述基板的上表面形成液膜之處理;及 (b)一面執行上述處理(a)一面拍攝上述基板的周緣部之處理; 於上述處理(b)中,位於上述處理室的外部之相機,經由窗部及第1反射鏡拍攝上述基板的周緣部,上述窗部設置於上述隔壁,上述第1反射鏡位於上述處理室內部之上述基板的周緣部上方。 A substrate processing method is a method for treating a substrate with a processing liquid. The method comprises performing the following processes (a) and (b): (a) rotating the substrate held in a horizontal position about a rotation axis extending in a vertical direction within a processing chamber having a partition wall defining a processing space for processing the substrate, while supplying a processing liquid to the upper surface of the substrate, thereby forming a liquid film on the upper surface of the substrate; and (b) photographing the peripheral portion of the substrate while performing the process (a). In the above process (b), a camera located outside the processing chamber captures the periphery of the substrate through a window and a first reflecting mirror. The window is provided in the partition wall, and the first reflecting mirror is located above the periphery of the substrate within the processing chamber.
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