TWI892003B - Substrate treating apparatus - Google Patents

Abstract

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises： a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises： an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another.

Description

Substrate processing equipment

Embodiments of the inventive concepts described herein relate to a substrate processing apparatus and a substrate processing apparatus using plasma.

To manufacture semiconductor devices, desired patterns are formed on a substrate through various processes, including photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning. Among these processes, etching removes selected heated areas from a film formed on the substrate, and both wet and dry etching methods are used.

Etching apparatuses using plasma are used for dry etching. Generally, to generate plasma, an electromagnetic field is formed in the interior space of a chamber, and the electromagnetic field excites a process gas provided in the chamber into a plasma state.

Plasma refers to an ionized gaseous state composed of ions, electrons, free radicals, or similar substances. Plasma is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields. In the semiconductor device manufacturing process, etching processes are performed using plasma.

In the aforementioned plasma-based substrate processing equipment, the substrate temperature is raised using a heating member (heating wire) on a substrate support member on which the substrate is placed. Conventional methods of heating the substrate using a heater take a long time to raise and lower the temperature, and it is difficult to uniformly heat the entire substrate.

To address this issue, a method has been proposed that uses microwaves to anneal the substrate in the upper region of a chamber. While this method reduces the time required for heating, it also causes non-uniform heat transfer within the substrate, resulting in a significant temperature difference between the edge and center of the substrate during the manufacturing process. This reduces the productivity of semiconductor wafers.

Therefore, the structural characteristics of the top window and electrodes in the chamber need to be redesigned to produce uniform heating distribution from microwaves across the entire surface of the substrate.

Embodiments of the inventive concepts provide a top window and electrode structure for improving heating and plasma uniformity.

The technical objectives of the present invention are not limited to the above, and other unmentioned technical objectives will be obvious to those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. The apparatus includes a chamber having a processing space therein; a support unit disposed within the processing space and configured to support a substrate; and a plasma generating unit configured to generate plasma from a processing gas supplied to the processing space. The plasma generating unit includes a bottom electrode member and a top electrode member opposite the bottom electrode member, wherein the top electrode member includes an electrode plate including an electrode; a first plate made of a material different from that of the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked one on top of each other.

In an embodiment, the thickness of the central portion and the thickness of the edge portion of the top electrode member are substantially equal.

In an embodiment, the electrode plate, the first plate, and the second plate are made of transparent materials.

In an embodiment, the first plate is configured to be a quartz material, and the second plate is configured to be an anti-etching material.

In an embodiment, the electrode plate is a transparent electrode maintaining transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, _SnO2 , ZnO, _IrO2 , _RuO2 , graphene, metal nanowires, CNTs, any mixture thereof, or any stacked combination thereof.

In an embodiment, the thickness of the center portion and edge portion of the first plate, the thickness of the center portion and edge region of the second plate, and the thickness of the center portion and edge region of the electrode plate are set to be the same.

In an embodiment, the electrode plate is placed on top of the second plate.

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space therein; a support unit disposed in the processing space and configured to support a substrate; and a plasma generating unit configured to generate plasma from a processing gas supplied to the processing space; wherein the plasma generating unit includes: a bottom electrode member; and a bottom electrode member connected to the bottom electrode member. A top electrode member opposite to the electrode member, wherein the top electrode member includes: an electrode plate including an electrode; a first plate made of a material different from the electrode plate; and a second plate, wherein the second plate, the electrode plate and the first plate are stacked on each other, and the thickness of the central portion of the top electrode member is different from the thickness of the edge portion of the top electrode member.

In an embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate.

In an embodiment, the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate.

In an embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate, and the thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate.

In an embodiment, the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate.

In an embodiment, the electrode plate, the first plate, and the second plate are made of transparent materials.

In an embodiment, the first plate is configured to be a quartz material, and the second plate is configured to be an anti-etching material.

In an embodiment, the electrode plate is a transparent electrode maintaining transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, _SnO2 , ZnO, _IrO2 , _RuO2 , graphene, metal nanowires, CNTs, any mixture thereof, or any stacked combination thereof.

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space therein; a support unit disposed in the processing space and configured to support a substrate; and a plasma generating unit configured to generate plasma from a processing gas supplied to the processing space; wherein the plasma generating unit includes: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member includes: An electrode plate comprising an electrode; a first plate made of a material different from the aforementioned electrode plate; and a second plate, wherein the aforementioned second plate, the aforementioned electrode plate and the aforementioned first plate are stacked on each other, and a first thickness of the central portion of the aforementioned top electrode member is different from a second thickness of the edge portion of the aforementioned top electrode member, and the difference between the aforementioned first thickness and the aforementioned second thickness is 500% or less of the aforementioned second thickness, or is 500% or less of the aforementioned first thickness.

In an embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate.

In an embodiment, the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate.

In an embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate.

The thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate.

In an embodiment, the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate.

In an embodiment, the electrode plate, the first plate, and the second plate are made of transparent materials.

In an embodiment, the first plate is configured to be a quartz material, and the second plate is configured to be an anti-etching material.

In an embodiment, the electrode plate is a transparent electrode maintaining transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, _SnO2 , ZnO, _IrO2 , _RuO2 , graphene, metal nanowires, CNTs, any mixture thereof, or any stacked combination thereof.

According to embodiments of the present inventive concepts, the uniformity of heating and plasma across the surface of a substrate can be improved.

The effects of the present invention are not limited to the effects mentioned above, and other unmentioned effects will be obvious to those skilled in the art from the following description.

Other advantages and features of the present invention, as well as methods for achieving the advantages and features, will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms, and these embodiments are provided only to ensure that the disclosure is complete and fully inform those skilled in the art of the scope of the invention.

All terms used herein (including technical and technological terms) have the same meanings as those generally accepted by those skilled in the art to which the present invention pertains, even if not defined otherwise. Terms defined in commonly used dictionaries are to be interpreted as having the same meanings as those in the relevant art and/or text of this application, and will not be conceptualized or overly formalized herein unless clearly defined.

Terms such as "first," "second," and the like may be used to describe various components, but the components should not be limited by these terms. These terms are used solely to distinguish between components. For example, a first component can be referred to as a second component without departing from the scope of the present invention, and similarly, a second component can be referred to as a first component.

Singular expressions include plural expressions unless clearly implied otherwise. In addition, the shapes and sizes in the drawings may be exaggerated for clearer explanation.

The terms used herein are for the purpose of describing specific embodiments only and are not intended to limit the concepts of the present invention. As used herein, the singular forms "a," "an," and "the aforementioned" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the terms "comprise," "comprising," and/or "include," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any one and all combinations of one or more of the associated listed items. In addition, the term "exemplary" is intended to refer to an example or illustration.

In the embodiments of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the technical features of the present invention are not limited thereto and can be applied to various types of apparatus for processing a substrate W using plasma and/or various types of apparatus in which a substrate placed on a support unit is processed by plasma.

In addition, in the embodiment of the present invention, an electrostatic chuck as a supporting unit will be described as an example. However, the present invention is not limited thereto, and the supporting unit may support the substrate by a mechanical clamp or by vacuum.

FIG1 illustrates a substrate processing apparatus according to an embodiment of the inventive concept.

1 , a substrate processing apparatus 10 may include a process chamber 100, a support unit 200, a gas supply unit 300, a plasma generating unit 400, and a heating unit 500. The substrate processing apparatus 10 processes a substrate W using plasma.

The process chamber 100 has a space for performing a process therein. An exhaust hole 103 is formed on the bottom side of the process chamber 100. The exhaust hole 103 is connected to an exhaust line 121 on which a pump 122 is installed. Reaction byproducts generated during the process and gases remaining in the process chamber 100 are exhausted to the outside of the process chamber 100 via the exhaust control 103 and the exhaust line 121. In addition, the internal space of the process chamber 100 is depressurized to a predetermined pressure by this exhaust process. In an embodiment, the exhaust hole 103 can be set at a position so as to be directly connected to the through hole 158 of the lining unit 130, which will be described later.

An opening 104 is formed on a side wall of the process chamber 100. The opening 104 serves as a passage through which a substrate enters and exits the process chamber 100. The opening 104 is opened and closed by a door assembly (not shown). According to an embodiment, the door assembly (not shown) has an external door, an internal door, and a connecting plate. The external door is provided on the external wall of the process chamber. The internal door is provided on the internal wall of the process chamber. The external door and the internal door are fixedly coupled to each other by the connecting plate. The connecting plate is provided to extend from the inside of the process chamber to the outside through the opening. The door driver moves the external door in an up/down vertical direction. The door driver may include a cylinder or a motor.

The support unit 200 is positioned in the bottom area of the interior of the process chamber 100. The support unit 200 supports the substrate W by electrostatic force. Different from this, the support unit 200 can support the substrate W in various ways such as a mechanical clamp.

The support unit 200 may include a support plate 210, a ring assembly 260, and a gas supply line unit 270. A substrate W is placed on the support plate 210. The support plate 210 has a base 220 and an electrostatic chuck 240. The electrostatic chuck 240 supports the substrate W on its top surface using electrostatic force. The electrostatic chuck 240 is fixedly coupled to the base 220.

The ring assembly 260 has a ring shape. It is provided to surround the circumference of the support plate 210. In one embodiment, the ring assembly 260 is provided to surround the circumference of the electrostatic chuck 240. The ring assembly 260 supports the edge region of the substrate W. According to one embodiment, the ring assembly 260 includes a focusing ring 262 and an insulating ring 264. The focusing ring 262 is provided to surround the electrostatic chuck 240 and focus plasma onto the substrate W. The insulating ring 264 is provided to surround the focusing ring 262. Optionally, the ring assembly 260 may include an edge ring (not shown) that is disposed in close contact with the circumference of the focus ring 262 to prevent plasma damage to the side surface of the electrostatic chuck 240. Different from the above description, the structure of the ring assembly 260 may be modified in various ways.

The gas supply line unit 270 includes a gas supply source 272 and a gas supply line 274. The gas supply line 274 is provided to supply gas to the space between the ring assembly 260 and the electrostatic chuck 240. The gas supply line 274 supplies gas to remove foreign matter remaining on the top surface of the ring assembly 260 or in the edge area of the electrostatic chuck 240. In one embodiment, the gas may be nitrogen (N2 ₎ . Other gases or cleaning agents may be supplied as needed. The gas supply line 274 may be formed to connect between the focusing ring 262 and the electrostatic chuck 240 within the support plate 210. Alternatively, the gas supply line 274 may be disposed inside the focusing ring 262 and bent to connect between the focusing ring 262 and the ESD chuck 240 .

According to an embodiment, the electrostatic chuck 240 may be made of ceramic, the focusing ring 262 may be made of silicon, and the insulating ring 264 may be made of quartz. A heating member 282 and a cooling member 284 for maintaining the substrate W at a processing temperature during processing may be disposed in the electrostatic chuck 240 or the susceptor 220. The heating member 282 may be a heating wire. The cooling member 284 may be a cooling line through which a refrigerant flows. According to an embodiment, the heating member 282 may be disposed in the electrostatic chuck 240, and the cooling member 284 may be disposed in the susceptor 220.

The gas supply unit 300 supplies process gas to the process chamber 100. The gas supply unit 300 includes a gas storage unit 310, a gas supply line 320, and a gas inlet port 330. The gas supply line 320 connects the gas storage unit 310 and the gas inlet port 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 310 to the gas inlet port 330. A valve 322 for opening and closing a passage or adjusting the flow rate of the fluid flowing through the passage may be installed in the gas supply line 320.

The plasma generating unit 400 generates plasma from process gas held in a discharge space corresponding to the space above the support unit 200 in the process chamber 100. The plasma generating unit 400 may have a capacitively coupled plasma source.

The plasma generating unit may include a top electrode member 420, a bottom electrode member, and a high-frequency power supply 460. The base is provided with a metal material. In an embodiment of the present inventive concept, the base is provided as the bottom electrode member 220. The top electrode member 420 and the bottom electrode member 220 may be provided to face each other in an up/down direction.

The top electrode member 420 according to the present invention will be described later with reference to Figures 2 to 6. The plasma generating unit according to the present invention can generate plasma by applying RF voltage to the top electrode member 420 or the bottom electrode member 220, or both the top electrode member 420 and the bottom electrode member 220 to generate an electric field between the top electrode member 420 and the bottom electrode member 220.

The top electrode member 420 according to the present invention may have a structure including a first plate, an electrode plate, and a second plate, so that microwaves generated by the heating unit 500 can be delivered to the substrate without loss.

The detailed structure of the top electrode component 420 according to the present invention will be described later with reference to FIG. 2 to FIG. 6 .

The plasma generation unit 400 according to the present invention may include a nozzle and a ring assembly, which may be formed in the second plate structure of the top electrode member to be described later. The nozzle may be positioned above the electrostatic chuck 240 and may have a diameter larger than that of the electrostatic chuck 240. A hole for injecting gas may be formed in the nozzle. The ring assembly is positioned to surround the nozzle and may be placed in close contact with the nozzle.

According to an embodiment, the top electrode member 420 can be connected to a ground 429, and the high-frequency power source 460 can be connected to the bottom electrode member 220. In some embodiments, the high-frequency power source 460 can be connected to the top electrode member 420, and the bottom electrode member 220 can be connected to a ground. In some embodiments, the high-frequency power source 460 can be connected to both the top electrode member 420 and the bottom electrode member 220. According to an embodiment, the high-frequency power source 460 can continuously supply power or pulse power to the top electrode member 420 and/or the bottom electrode member.

Heating unit 500 can provide microwaves to anneal the substrate on support unit 200. Because the wavelength of microwaves is significantly longer than the thickness and spacing of the metal wiring layers of a semiconductor chip, the depth of microwave penetration into the metal material is less than a few microns. According to an embodiment, microwave heating can rapidly raise the surface temperature of the substrate or die to the target temperature by heating the surface.

The heating unit 500 may include a waveguide that guides microwaves into the process chamber 100. The heating unit 500 may apply microwaves having a frequency of 1 to 5 GHz. According to embodiments of the present inventive concept, since the surface of the substrate is selectively heated by the microwaves, the temperature increase and cooling rates are rapid, and the substrate surface can be heated to the target temperature in a short time, thereby shortening the processing time.

According to an embodiment, the heating unit 500 according to the present invention can be provided as a heat treatment unit using microwaves. Alternatively, the heating unit 500 according to the present invention can be provided as a heat treatment unit using lasers. In the present invention, a heat source such as microwaves and lasers can pass through the top electrode member 420 to heat the substrate. The top electrode member 420 can be configured as a transparent material through which light can pass.

FIG2 illustrates a top electrode member 420 according to an embodiment of the inventive concepts.

In the present invention, a top electrode member 420 including a transparent electrode is proposed to improve substrate heating uniformity and plasma uniformity. The top electrode member 420 according to the present invention may include an electrode plate 422 including an electrode, a first plate 421 made of a material different from that of the electrode plate 422, and a second plate 423. According to an embodiment, the top electrode member 420 may be provided by stacking the second plate 423, the electrode plate 422, and the first plate 421.

2 to 6 , there are shown embodiments in which the top electrode member 420 may be stacked and provided in the order of the second plate 423, the electrode plate 422, and the first plate 421. However, the stacking order is not limited thereto, and the second plate 423, the first plate 421, and the electrode plate 422 may be stacked in this order or any other order.

Hereinafter, as an example, the top electrode member 420 stacked in the order of the second plate 423, the electrode plate 422, and the first plate 421 will be described.

The top electrode member 420 according to the present invention may include an electrode plate 422 serving as a top electrode. A ground or high-frequency power source may be connected to the electrode plate 422. The electrode plate 422 may include a transparent electrode. The second plate 423 may be configured as an etch-resistant material to prevent etching of the material during the plasma treatment process. According to an embodiment, the second plate 423 may be provided as a structure including a nozzle. However, this is merely an example, and the second plate 423 may be configured as an etch-resistant material without a nozzle. The first plate 421 may serve as a dielectric window. The first plate 421 may be a nanowire having transparency. According to an embodiment, the electrode plate 422, the first plate 421, and the second plate 423 included in the top electrode member 420 may be configured as a transparent material so that energy provided by the self-heating unit 500 can pass through.

According to an embodiment, the electrode plate 422 may be a transparent electrode formed of indium tin oxide (ITO). According to an embodiment, the electrode plate 422 may be any of the following: indium tin oxide (ITO), manganese oxide (MnO), carbon nanotubes (CNT), zinc oxide (ZnO), indium zinc oxide (IZO), antimony tin oxide (ATO), _SnO2 , _IrO2 , _RuO2 , dielectric/metal/dielectric multilayer (SnO2/Ag/SnO2), graphene, any mixture thereof, or any stacked combination thereof. That is, the electrode plate 422 may be made of a transparent conductive material to increase the transmittance of microwaves.

According to an embodiment, the first plate 421 may be made of quartz. According to an embodiment, the first plate 421 may be made of SiO2. According to an embodiment, _the second plate 423 may be made of an etch-resistant material. According to an embodiment, the second plate 423 may be made of any of the following: _Y2O3 , yttria-stabilized zirconia ( _ZrO2 / _{Y2O3 )} , yttrium aluminum garnet (YAG) _{( Y3Al5O12} ), _Al2O3 , _Cr2O3 , _Nb2O5 , _Si3N3 , _any mixture thereof, or any stacked combination thereof. The _second plate 423 may be made of a material that is transparent, _plasma -resistant, and etch _- resistant. Therefore, the second plate 423 can have excellent conductivity and protect the electrode plate 422.

According to the embodiment of Figure 2, the thickness of the center portion and the edge portion of the top electrode member 420 can be substantially equal. In Figure 2, the thickness of the center portion is indicated by _tb , and the thickness of the edge portion is indicated by _ta . Referring to Figure 2, the thickness of the center portion and the thickness of the edge portion can be the same. According to an embodiment, the thickness _t421 of the first plate 421 (the thickness of the edge portion of the first plate 421), the thickness _t422 of the second plate 423 (the thickness of the edge portion of the second plate 423) and the thickness _t423 of the electrode plate 422 (the thickness of the edge portion of the electrode plate 422) can be the same. According to an embodiment, the center portion and the edge portion of the first plate 421, the center portion and the edge portion of the second plate 423, and the center portion and the edge portion of the electrode plate 422 may have the same thickness.

As shown in FIG. 2 , using the top electrode member 420 having three vertically stacked layers, heat applied by the heating unit 500 can be easily transferred to the process chamber 110 , and the top electrode member 420 can be protected from the external environment, compared to an electrode member provided as only a single layer.

According to an embodiment, the electrode plate 422 may be disposed on top of the second plate 423 and thereby protected from plasma etching.

3 to 6 illustrate a top electrode member 420 according to another embodiment of the present inventive concept.

According to the embodiment of Figures 3 to 6, the materials of the first plate 421, the second plate 423 and the electrode plate 422 are the same as those described with reference to Figure 2, and therefore any repeated description thereof will be omitted. In the embodiment of Figures 3 to 6, the top electrode member 420 may have a different thickness profile than those shown in Figure 2.

3 to 6 , the thickness _tb of the center portion and the thickness _ta of the edge portion of the top electrode member 420 are provided differently. This thickness difference between the edge portion and the center portion of the top electrode member 420 may be caused by the electrode plate 422, the first plate 421, and/or the second plate 423.

According to the embodiment of FIG. 3 , the first plate 421 may have a non-uniform thickness. For example, the thickness of the center portion and the edge portion of the first plate 421 may be provided differently. The electrode plate 422 and the second plate 423 may have a uniform thickness and further may have flat top and bottom surfaces. The first plate 421 may have a flat bottom surface and a curved (convex) top surface. Therefore, in the top electrode member 420, the thickness _tb at the center may be different from the thickness _ta at the edge, for example, the thickness _tb at the center may be greater than the thickness _ta at the edge.

According to the embodiment of FIG. 4 , the electrode plate 422 may have a non-uniform thickness. For example, the thickness of the center portion and the edge portion of the electrode plate 422 may be provided differently. The first plate 421 and the second plate 423 may have uniform thicknesses, while the first plate 421 may have curved top and bottom surfaces, and the second plate 423 may have flat top and bottom surfaces. The electrode plate 422 may have a curved (convex) top surface and a flat bottom surface. Therefore, in the top electrode member 420, the thickness _tb at the center may be different from the thickness _ta at the edge. For example, the thickness _tb at the center may be greater than the thickness _ta at the edge.

According to the embodiment of FIG5 , the first plate 421 and the electrode plate 422 may have uneven thicknesses. The thickness of the center portion and the edge portion of the electrode plate 422 may be different, and the thickness of the center portion and the edge portion of the first plate 421 may be set differently. The first plate 421 may have curved top and bottom surfaces, such as convex top and bottom surfaces (convex lens shape), whereby the thickness gradually decreases from the center to the edge. The electrode plate 422 may have a concave top surface that matches the convex bottom surface of the first plate 421. The second plate 423 has a uniform thickness under the flat top and bottom surfaces. Therefore, in the top electrode member 420, the thickness _tb at the center may be different from the thickness _ta at the edge, for example, the thickness _tb at the center is greater than the thickness _ta at the edge.

According to the embodiment of FIG6 , the second plate 423 may have a non-uniform thickness. For example, the thickness of the center portion and the edge portion of the second plate 423 may be provided differently. The second plate 423 may have a flat bottom surface and a curved (convex) top surface, whereby the thickness of the second plate 423 may gradually decrease from the center to the edge. The first plate 421 and the electrode plate 422 may have uniform thickness, while the first plate 421 may have curved top and bottom surfaces (convex top surface and concave bottom surface), and the electrode plate 422 may have a curved (convex) top surface that matches the concave bottom surface of the first plate 421 and a curved (concave) bottom surface that matches the convex top surface of the second plate 423. Therefore, in the top electrode member 420, the thickness _tb at the center may be different from the thickness _ta at the edge, for example, the thickness _tb at the center is greater than the thickness _ta at the edge.

According to an embodiment, the first thickness of the center portion of the top electrode member 420 and the second thickness of the edge portion of the top electrode member 420 can be set differently, and the difference between the first thickness and the second thickness can be 500% or less of the second thickness, or 500% or less of the first thickness. In this way, heat transfer can be performed uniformly without significantly changing the structure.

That is, according to the inventive concepts of Figures 3 to 6 , the thickness of the center portion and the edge portion of the top electrode member 420 are set differently, thereby providing more uniform heat transfer across the entire substrate compared to the embodiment of Figure 2 . More specifically, in the embodiment of Figures 3 to 6 , the thickness of the center portion and the edge portion are different from each other, thereby achieving non-uniform heat transfer across the entire substrate by making the thermal conductivity different in the center portion and the edge portion. Furthermore, by making the thickness of the center portion and the edge portion different, the dielectric constant can be different in the center portion and the edge portion, allowing plasma to be uniformly excited throughout the entire substrate.

According to the present invention, it is possible to fully transfer microwaves to the substrate without heat loss by using the embodiment of FIG2 . However, in the case of the embodiment of FIG2 , when microwaves are applied, equal heat transfer may not be possible for every location, and thus the heat transfer efficiency may vary for every location of the substrate.

According to the present invention, heat transfer and plasma non-uniformity are ensured by making the thickness of the center portion and the edge portion different from each other through the embodiments of Figures 3 to 6. Therefore, uniform heat transfer to the bottom portion of the top electrode member 420 can be induced, thereby imparting uniform heat transfer and thus increasing the productivity of semiconductor wafers.

The structure of the top electrode member 420 according to the present invention is not limited to the embodiments shown in Figures 2 through 6. Figures 2 through 6 illustrate an embodiment in which only the thickness is a variable, but the position and material of the electrode plate 422 can also be varied in addition to the thickness. Furthermore, Figures 2 through 6 illustrate an embodiment in which the center portion is thicker than the edge portion, but depending on the heat transfer situation, a thicker edge portion can be provided relative to the center portion.

The effects of the present invention are not limited to the above effects, and effects not mentioned can be clearly understood by those skilled in the art to which the present invention relates from the specification and the accompanying drawings.

Although preferred embodiments of the present invention have been illustrated and described so far, the present invention is not limited to the specific embodiments described above. It should be noted that a person skilled in the art can implement the present invention in various ways without departing from the essence of the present invention claimed in the scope of the patent application, and modifications should not be interpreted in isolation from the technical spirit or prospect of the present invention.

10: Substrate processing equipment 100: Process chamber 103: Exhaust hole 104: Opening 110: Process chamber 121: Exhaust line 122: Pump 130: Liner unit 158: Through hole 200: Support unit 210: Support plate 220: Bottom electrode assembly 240: Electrostatic chuck 260: Ring assembly 262: Focusing ring 264: Insulation ring 270: Gas supply line unit 272: Gas Supply source 274: Gas supply line 282: Heating component 284: Cooling component 300: Gas supply unit 310: Gas storage unit 320: Gas supply line 322: Valve 330: Gas inlet port 400: Plasma generation unit 420: Top electrode component 421: First plate 422: Electrode plate 423: Second plate 429: Ground 460: High-frequency power supply 500: Heating unit t _b : Thickness _ta : Thickness t ₄₂₁ : Thickness t ₄₂₂ : Thickness t ₄₂₃ : Thickness

The above and other objects and features will become apparent from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified.

FIG1 shows a substrate processing apparatus according to an embodiment of the inventive concept.

FIG2 shows a top electrode member according to an embodiment of the inventive concept.

3 to 6 illustrate a top electrode member according to another embodiment of the inventive concept.

10: Substrate processing equipment

100: Processing Chamber

103: Exhaust hole

104: Opening

110: Processing Chamber

121: Exhaust pipe

122: Pump

130: Lining unit

200: Support unit

210: Support plate

220: Bottom electrode component

240: Electrostatic chuck

260: Ring assembly

262: Focus Ring

264: Insulation Ring

270: Gas supply pipeline unit

272: Gas supply source

274: Gas supply line

282: Heating component

284: Cooling components

300: Gas supply unit

310: Gas Storage Unit

320: Gas supply pipeline

322: Valve

400: Plasma generation unit

420: Top electrode component

429: Grounding

460: High frequency power supply

500: Heating unit

Claims (20)

A substrate processing apparatus comprises: a chamber having a processing space therein; a support unit disposed within the processing space and configured to support a substrate; and a plasma generating unit configured to generate plasma from a processing gas supplied to the processing space; the plasma generating unit comprises: a bottom electrode member; and a top electrode member opposite the bottom electrode member, the top electrode member comprises: an electrode plate including an electrode; a first plate made of a material different from that of the electrode plate; and a second plate, the second plate, the electrode plate, and the first plate are stacked on top of each other and are configured as a transparent material. The substrate processing apparatus of claim 1, wherein the thickness of the central portion and the thickness of the edge portion of the top electrode component are substantially equal. The substrate processing apparatus as described in claim 1, wherein the first plate is configured to be a quartz material, and the second plate is configured to be an anti-etching material. The substrate processing apparatus as described in claim 3, wherein the electrode plate is a transparent electrode that maintains transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, _SnO2 , ZnO, _IrO2 , _RuO2 , graphene, metal nanowires, CNTs, any mixture thereof, and any stacked combination thereof. A substrate processing apparatus as described in any one of claims 2 to 4, wherein the thickness of the center portion and edge portion of the first plate, the thickness of the center portion and edge region of the second plate, and the thickness of the center portion and edge region of the electrode plate are set to be the same. The substrate processing apparatus of claim 5, wherein the electrode plate is placed on top of the second plate. A substrate processing apparatus comprises: a chamber having a processing space therein; a support unit disposed in the processing space and configured to support a substrate; and a plasma generating unit configured to generate plasma from a processing gas supplied to the processing space, wherein the plasma generating unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a material different from that of the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on top of each other and are configured as a transparent material, and The thickness of the central portion of the top electrode member is different from the thickness of the edge portion of the top electrode member. The substrate processing apparatus of claim 7, wherein the thickness of the center portion of the electrode plate is different from the thickness of the edge portion of the electrode plate. The substrate processing apparatus of claim 7, wherein the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate. The substrate processing apparatus of claim 7, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate, and the thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate. The substrate processing apparatus of claim 7, wherein the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate. The substrate processing apparatus as described in claim 7, wherein the first plate is configured to be a quartz material, and the second plate is configured to be an anti-etching material. The substrate processing apparatus as described in claim 12, wherein the electrode plate is a transparent electrode that maintains transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, _SnO2 , ZnO, _IrO2 , _RuO2 , graphene, metal nanowires, CNTs, any mixture thereof, and any stacked combination thereof. A substrate processing apparatus comprises: a chamber having a processing space therein; a support unit disposed in the processing space and configured to support a substrate; and a plasma generating unit configured to generate plasma from a processing gas supplied to the processing space, wherein the plasma generating unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a material different from that of the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on top of each other and are configured to be a transparent material, The first thickness of the central portion of the top electrode member is different from the second thickness of the edge portion of the top electrode member, and the difference between the first thickness and the second thickness is 500% or less of the second thickness or 500% or less of the first thickness. The substrate processing apparatus of claim 14, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate. The substrate processing apparatus of claim 14, wherein the thickness of the center portion of the first plate is different from the thickness of the edge portion of the first plate. The substrate processing apparatus of claim 14, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate, and the thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate. The substrate processing apparatus of claim 14, wherein the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate. The substrate processing apparatus of claim 14, wherein the first plate is configured to be a quartz material, and the second plate is configured to be an anti-etching material. The substrate processing apparatus as described in claim 19, wherein the electrode plate is a transparent electrode that maintains transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, _SnO2 , ZnO, _IrO2 , _RuO2 , graphene, metal nanowires, CNTs, any mixture thereof, and any stacked combination thereof.