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TWI892060B - Integrated overcurrent protection device - Google Patents

Integrated overcurrent protection device

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Publication number
TWI892060B
TWI892060B TW111147958A TW111147958A TWI892060B TW I892060 B TWI892060 B TW I892060B TW 111147958 A TW111147958 A TW 111147958A TW 111147958 A TW111147958 A TW 111147958A TW I892060 B TWI892060 B TW I892060B
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ptc
conductive
metal layer
electrode
protection device
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TW111147958A
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Chinese (zh)
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TW202425008A (en
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陳繼聖
江長鴻
葉敬強
李明駿
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富致科技股份有限公司
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Abstract

一種積體過電流保護裝置包含一PTC元件、一第一導電單元、一第二導電單元、一第一導電貫孔及一第二導電貫孔。該PTC元件包括一第一PTC本體,且該PTC元件具有兩相反表面。該第一導電單元包括一第一金屬層,該第一金屬層包括一第一電極及一與該第一電極絕緣的第一導電墊片。該第二導電單元包括一第二金屬層,該第二金屬層包括一第二電極及一與該第二電極絕緣的第二導電墊片。該第一導電貫孔延伸穿過該第一導電單元及該PTC元件,以電連接該第一電極及該第二導電墊片。該第二導電貫孔延伸穿過該第二導電單元及該PTC元件,以電連接該第二電極及該第一導電墊片。An integrated overcurrent protection device includes a PTC component, a first conductive unit, a second conductive unit, a first conductive via, and a second conductive via. The PTC component includes a first PTC body having two opposite surfaces. The first conductive unit includes a first metal layer, which includes a first electrode and a first conductive pad insulated from the first electrode. The second conductive unit includes a second metal layer, which includes a second electrode and a second conductive pad insulated from the second electrode. The first conductive via extends through the first conductive unit and the PTC component to electrically connect the first electrode and the second conductive pad. The second conductive through hole extends through the second conductive unit and the PTC element to electrically connect the second electrode and the first conductive pad.

Description

積體過電流保護裝置Integrated overcurrent protection device

本發明是有關於一種積體過電流保護裝置,特別是指一種形成有第一導電貫孔及第二導電貫孔的積體過電流保護裝置。The present invention relates to an integrated overcurrent protection device, and more particularly to an integrated overcurrent protection device having a first conductive via and a second conductive via.

正溫度係數(positive temperature coefficient, PTC)元件具有PTC效應,使其可用作為一過電流保護裝置(例如可復式保險絲)。Positive temperature coefficient (PTC) components have a PTC effect, which allows them to be used as an overcurrent protection device (such as a resettable fuse).

參閱圖1,一種現有的過電流保護裝置包含一PTC本體91、一第一電極92、一第二電極93、一第一金屬引線94及一第二金屬引線95。該第一電極92及該第二電極93分別設置於該PTC本體91的兩相反表面上。該第一金屬引線94及該第二金屬引線95分別電連接該第一電極92及該第二電極93。該PTC本體91包括一含有一晶體區域及一非晶體區域的聚合物基材,及一顆粒狀導電填料。該顆粒狀導電填料分散於該聚合物基材之非晶體區域,並形成一用於電連接該第一電極92及該第二電極93之間的連續導電路徑。該PTC效應指的是當該晶體區域的聚合物基材溫度被升高至其熔點時,該晶體區域中的結晶開始熔化,從而產生一新的非晶體區域。當該新的非晶體區域增加至一合併至該原非晶體區域的程度時,該顆粒狀導電填料的導電路徑會轉變為非連續且該PTC聚合物單元的電阻會急劇增加,造成該第一電極92及該第二電極93之間電不導通。然而,上述過電流保護裝置的電性及可靠性不盡理想。Referring to FIG. 1 , a conventional overcurrent protection device includes a PTC body 91, a first electrode 92, a second electrode 93, a first metal lead 94, and a second metal lead 95. The first electrode 92 and the second electrode 93 are disposed on opposite surfaces of the PTC body 91. The first metal lead 94 and the second metal lead 95 electrically connect the first electrode 92 and the second electrode 93, respectively. The PTC body 91 includes a polymer matrix having a crystalline region and an amorphous region, and a granular conductive filler. The granular conductive filler is dispersed in the amorphous region of the polymer matrix and forms a continuous conductive path for electrically connecting the first electrode 92 and the second electrode 93. The PTC effect occurs when the temperature of the polymer matrix in the crystalline region is raised to its melting point, causing the crystals in the crystalline region to melt, thereby creating a new amorphous region. When the new amorphous region grows to the point where it merges with the original amorphous region, the conductive path of the granular conductive filler becomes discontinuous, and the resistance of the PTC polymer unit increases dramatically, resulting in electrical disconnection between the first electrode 92 and the second electrode 93. However, the electrical performance and reliability of the above-mentioned overcurrent protection device are not ideal.

因此,本發明之目的,即在提供一種積體過電流保護裝置,可以克服上述先前技術的至少一個缺點。Therefore, the object of the present invention is to provide an integrated overcurrent protection device that can overcome at least one disadvantage of the above-mentioned prior art.

於是,本發明積體過電流保護裝置包含一PTC元件、一第一導電單元、一第二導電單元、一第一導電貫孔及一第二導電貫孔。該PTC元件包括一第一PTC本體,且該PTC元件具有兩相反的第一表面及第二表面。該第一導電單元包括一設置於該第一表面上的第一金屬層,該第一金屬層包括一第一電極及一與該第一電極絕緣的第一導電墊片。該第二導電單元包括一設置於該第二表面上的第二金屬層,該第二金屬層包括一第二電極及一與該第二電極絕緣的第二導電墊片。該第一導電貫孔延伸穿過該第一導電單元及該PTC元件,以電連接該第一電極及該第二導電墊片。該第二導電貫孔延伸穿過該第二導電單元及該PTC元件,以電連接該第二電極及該第一導電墊片。Therefore, the integrated overcurrent protection device of the present invention includes a PTC element, a first conductive unit, a second conductive unit, a first conductive through-hole and a second conductive through-hole. The PTC element includes a first PTC body, and the PTC element has two opposite first and second surfaces. The first conductive unit includes a first metal layer disposed on the first surface, the first metal layer including a first electrode and a first conductive pad insulated from the first electrode. The second conductive unit includes a second metal layer disposed on the second surface, the second metal layer including a second electrode and a second conductive pad insulated from the second electrode. The first conductive through-hole extends through the first conductive unit and the PTC element to electrically connect the first electrode and the second conductive pad. The second conductive through hole extends through the second conductive unit and the PTC element to electrically connect the second electrode and the first conductive pad.

本發明之功效在於:該積體過電流保護裝置可提升傳導性並具有良好的電性及可靠性。The effect of the present invention is that the integrated overcurrent protection device can improve conductivity and has good electrical properties and reliability.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that similar elements are denoted by the same reference numerals in the following description.

此外,在本發明說明書及申請專利範圍中所使用的方向性用語(例如:頂、底、上、下、向上、向下)單純是意圖幫助描述本發明元件之間的相對位置,而不是意圖限制本發明實際執行時每一元件的實際位置。In addition, directional terms (e.g., top, bottom, upper, lower, upward, downward) used in the present specification and patent application are merely intended to help describe the relative positions of the components of the present invention, and are not intended to limit the actual position of each component when the present invention is actually implemented.

參閱圖2,本發明積體過電流保護裝置的第一實施例包含一PTC元件20、一第一導電單元、一第二導電單元、一第一導電貫孔51及一第二導電貫孔52。2 , the first embodiment of the integrated over-current protection device of the present invention includes a PTC element 20 , a first conductive unit, a second conductive unit, a first conductive via 51 , and a second conductive via 52 .

該PTC元件20包括一第一PTC本體23,且該PTC元件20具有兩相反的第一表面21及第二表面22。該第一PTC本體23為一PTC聚合物層,該PTC聚合物層包括一聚合物基材及一分散在該聚合物基材中的導電填料。該聚合物基材由一聚合物組成物所製得,該聚合物組成物含有一非接枝的烯烴系聚合物。在本發明的部分具體實施例中,該非接枝的烯烴系聚合物是高密度聚乙烯(HDPE)。在本發明的部分具體實施例中,該聚合物組成物還包括一經羧酸酐接枝的烯烴系聚合物。該導電填料可包括但不限於碳黑粉末、金屬粉末、導電陶瓷粉末或其組合。The PTC element 20 includes a first PTC body 23, and the PTC element 20 has two opposite first surfaces 21 and a second surface 22. The first PTC body 23 is a PTC polymer layer, which includes a polymer matrix and a conductive filler dispersed in the polymer matrix. The polymer matrix is made of a polymer composition, which contains a non-grafted olefin polymer. In some specific embodiments of the present invention, the non-grafted olefin polymer is high-density polyethylene (HDPE). In some specific embodiments of the present invention, the polymer composition further includes an olefin polymer grafted with a carboxylic anhydride. The conductive filler may include but is not limited to carbon black powder, metal powder, conductive ceramic powder or a combination thereof.

該第一導電單元包括一設置於該第一表面21上的第一金屬層30,該第一金屬層30包括一第一電極31及一與該第一電極31絕緣的第一導電墊片41。在本發明的部分具體實施例中,該第一金屬層30形成有一第一溝槽71,以曝露出該第一表面21,並使該第一電極31與該第一導電墊片41絕緣。該第一溝槽71可藉由公知的蝕刻、裁切以形成預定的形狀。該第一金屬層30可為銅箔(如鍍鎳銅箔)。The first conductive unit includes a first metal layer 30 disposed on the first surface 21. The first metal layer 30 includes a first electrode 31 and a first conductive pad 41 insulated from the first electrode 31. In some embodiments of the present invention, a first trench 71 is formed in the first metal layer 30 to expose the first surface 21 and insulate the first electrode 31 from the first conductive pad 41. The first trench 71 can be formed into a predetermined shape by conventional etching and cutting techniques. The first metal layer 30 can be copper foil (e.g., nickel-plated copper foil).

該第二導電單元包括一設置於該第二表面22上的第二金屬層40,該第二金屬層40包括一第二電極32及一與該第二電極32絕緣的第二導電墊片42。在本發明的部分具體實施例中,該第二金屬層40形成有一第二溝槽72,以曝露出該第二表面22,並使該第二電極32與該第二導電墊片42絕緣。該第二溝槽72可藉由公知的蝕刻、裁切以形成預定的形狀。該第二金屬層40的材料可與該第一金屬層30相同或不同。The second conductive unit includes a second metal layer 40 disposed on the second surface 22. The second metal layer 40 includes a second electrode 32 and a second conductive pad 42 insulated from the second electrode 32. In some embodiments of the present invention, a second trench 72 is formed in the second metal layer 40 to expose the second surface 22 and insulate the second electrode 32 from the second conductive pad 42. The second trench 72 can be formed into a predetermined shape by conventional etching and cutting techniques. The material of the second metal layer 40 can be the same as or different from that of the first metal layer 30.

該第一導電貫孔51延伸穿過該第一導電單元及該PTC元件20,以電連接該第一電極31及該第二導電墊片42。在本發明的部分具體實施例中,該第一導電貫孔51還延伸穿過該第二導電單元。The first conductive through hole 51 extends through the first conductive unit and the PTC element 20 to electrically connect the first electrode 31 and the second conductive pad 42. In some specific embodiments of the present invention, the first conductive through hole 51 also extends through the second conductive unit.

該第二導電貫孔52延伸穿過該第二導電單元及該PTC元件20,以電連接該第二電極32及該第一導電墊片41。在本發明的部分具體實施例中,該第二導電貫孔52還延伸穿過該第一導電單元。在該等具體實施例中,該第一導電貫孔51及該第二導電貫孔52皆延伸穿過該第一導電單元、該第二導電單元及該PTC元件20。The second conductive via 52 extends through the second conductive unit and the PTC element 20 to electrically connect the second electrode 32 and the first conductive pad 41. In some embodiments of the present invention, the second conductive via 52 also extends through the first conductive unit. In these embodiments, both the first conductive via 51 and the second conductive via 52 extend through the first conductive unit, the second conductive unit, and the PTC element 20.

該積體過電流保護裝置具有一上表面(即該第一金屬層30相反於該第一表面21的頂面)、一下表面(即該第二金屬層40相反於該第二表面22的底面)及互連於該上表面及該下表面的側壁。在本發明的部分具體實施例中,該第一導電貫孔51及該第二導電貫孔52中至少其中一者與該積體過電流保護裝置的側壁相間隔,意即該第一導電貫孔51及該第二導電貫孔52中至少其中一者未曝露於該積體過電流保護裝置的側壁。The integrated overcurrent protection device has an upper surface (i.e., the top surface of the first metal layer 30 opposite the first surface 21), a lower surface (i.e., the bottom surface of the second metal layer 40 opposite the second surface 22), and sidewalls interconnecting the upper and lower surfaces. In some embodiments of the present invention, at least one of the first conductive via 51 and the second conductive via 52 is spaced apart from the sidewall of the integrated overcurrent protection device, meaning that at least one of the first conductive via 51 and the second conductive via 52 is not exposed to the sidewall of the integrated overcurrent protection device.

參閱圖3,本發明積體過電流保護裝置的第二實施例與該第一實施例類似,差異之處在於該第二導電單元還包括一第一絕緣層61及一第三金屬層62。該第一絕緣層61設置於該PTC元件20及該第二金屬層40之間,且藉由該第二溝槽72部分曝露於該第二金屬層40。該第三金屬層62設置於該PTC元件20及該第一絕緣層61之間。該第一導電貫孔51還延伸穿過該第一絕緣層61及該第三金屬層62。該第三金屬層62的材料可與該第一金屬層30相同或不同。該第一絕緣層61可由一電絕緣材料(例如環氧樹脂)所製成。Referring to FIG. 3 , the second embodiment of the integrated overcurrent protection device of the present invention is similar to the first embodiment, except that the second conductive unit further includes a first insulating layer 61 and a third metal layer 62. The first insulating layer 61 is disposed between the PTC element 20 and the second metal layer 40 and is partially exposed to the second metal layer 40 via the second trench 72. The third metal layer 62 is disposed between the PTC element 20 and the first insulating layer 61. The first conductive via 51 also extends through the first insulating layer 61 and the third metal layer 62. The material of the third metal layer 62 may be the same as or different from that of the first metal layer 30. The first insulating layer 61 can be made of an electrically insulating material (such as epoxy resin).

參閱圖4,本發明積體過電流保護裝置的第三實施例與該第二實施例類似,差異之處在於該第一導電單元還包括一第二絕緣層63及一第四金屬層64。該第二絕緣層63設置於該PTC元件20及該第一金屬層30之間,且藉由該第一溝槽71部分曝露於該第一金屬層30。該第四金屬層64設置於該PTC元件20及該第二絕緣層63之間。該第二導電貫孔52還延伸穿過該第二絕緣層63及該第四金屬層64。該第四金屬層64的材料可與該第一金屬層30相同或不同。該第二絕緣層63的材料可與該第一絕緣層61相同或不同。Referring to FIG. 4 , the third embodiment of the integrated overcurrent protection device of the present invention is similar to the second embodiment, except that the first conductive unit further includes a second insulating layer 63 and a fourth metal layer 64. The second insulating layer 63 is disposed between the PTC element 20 and the first metal layer 30 and is partially exposed to the first metal layer 30 via the first trench 71. The fourth metal layer 64 is disposed between the PTC element 20 and the second insulating layer 63. The second conductive via 52 also extends through the second insulating layer 63 and the fourth metal layer 64. The material of the fourth metal layer 64 can be the same as or different from that of the first metal layer 30. The material of the second insulating layer 63 may be the same as or different from that of the first insulating layer 61 .

參閱圖5至圖7,本發明積體過電流保護裝置的第四實施例、第五實施例及第六實施例分別與該第一實施例、該第二實施例及該第三實施例類似,差異之處在於該PTC元件20還包括一第二PTC本體24、一PTC絕緣層25、一第一PTC金屬層26及一第二PTC金屬層27。該PTC絕緣層25設置於該第一PTC本體23及該第二PTC本體24之間。該第一PTC金屬層26設置於該PTC絕緣層25及該第一PTC本體23之間。該第二PTC金屬層27設置於該PTC絕緣層25及該第二PTC本體24之間。Referring to Figures 5 to 7 , the fourth, fifth, and sixth embodiments of the integrated overcurrent protection device of the present invention are similar to the first, second, and third embodiments, respectively, except that the PTC element 20 further includes a second PTC body 24, a PTC insulation layer 25, a first PTC metal layer 26, and a second PTC metal layer 27. The PTC insulation layer 25 is disposed between the first PTC body 23 and the second PTC body 24. The first PTC metal layer 26 is disposed between the PTC insulation layer 25 and the first PTC body 23. The second PTC metal layer 27 is disposed between the PTC insulating layer 25 and the second PTC body 24.

每一第一導電貫孔51及每一第二導電貫孔52延伸穿過該第一PTC本體23、該第二PTC本體24、該第一PTC金屬層26、該第二PTC金屬層27及該PTC絕緣層25。該第一PTC本體23及該第二PTC本體24是藉由該第一導電貫孔51、該第二導電貫孔52、該第一PTC金屬層26及該第二PTC金屬層27以並聯方式互相電連接。當該第一PTC本體23及該第二PTC本體24以並聯方式互相電連接,該積體過電流保護裝置可呈現出較低的電阻。Each first conductive via 51 and each second conductive via 52 extends through the first PTC body 23, the second PTC body 24, the first PTC metal layer 26, the second PTC metal layer 27, and the PTC insulation layer 25. The first PTC body 23 and the second PTC body 24 are electrically connected in parallel via the first conductive via 51, the second conductive via 52, the first PTC metal layer 26, and the second PTC metal layer 27. When the first PTC body 23 and the second PTC body 24 are electrically connected in parallel, the integrated overcurrent protection device exhibits a low resistance.

該第二PTC本體24的材料可與該第一PTC本體23相同或不同。每一第一PTC金屬層26及每一第二PTC金屬層27的材料可獨立地與該第一金屬層30相同或不同。該PTC絕緣層25可由環氧樹脂所製成。The material of the second PTC body 24 can be the same as or different from that of the first PTC body 23. The material of each first PTC metal layer 26 and each second PTC metal layer 27 can be the same as or different from that of the first metal layer 30. The PTC insulation layer 25 can be made of epoxy resin.

在本發明另外的部分具體實施例中,視實際需要,每一第一導電單元及每一第二導電單元可包括額外的金屬層及額外的絕緣層,且該PTC元件20可包括額外的PTC本體、額外的PTC金屬層及額外的PTC絕緣層。In some other specific embodiments of the present invention, as needed, each first conductive unit and each second conductive unit may include an additional metal layer and an additional insulating layer, and the PTC element 20 may include an additional PTC body, an additional PTC metal layer, and an additional PTC insulating layer.

本發明將就以下實施例來作進一步說明,但應瞭解的是,該等實施例僅為例示說明之用,而不應被解釋為本發明實施之限制。The present invention will be further described with reference to the following embodiments. However, it should be understood that these embodiments are for illustration only and should not be construed as limiting the implementation of the present invention.

實施例Embodiment

<實施例1 (E1)<Example 1 (E1) >

首先,10.25 g HDPE(購自台灣塑膠工業股份有限公司,產品型號:HDPE9002)作為非接枝的烯烴系聚合物,10.25 g經馬來酸酐接枝的HDPE(購自杜邦公司,產品型號:MB100D)作為經羧酸酐接枝的烯烴系聚合物,29.5 g碳黑粉末(購自Columbian Chemicals公司,產品型號:Raven 430UB)作為導電填料。將上述配料在一混煉機(廠牌:Brabender)中混合,以溫度為200℃、攪拌轉速為30 rpm的條件混合配料10 min,以得到一配料混合物。First, 10.25 g of HDPE (purchased from Taiwan Plastics Industry Co., Ltd., product number: HDPE9002) was used as the non-grafted olefin polymer, 10.25 g of maleic anhydride-grafted HDPE (purchased from DuPont, product number: MB100D) was used as the carboxylic anhydride-grafted olefin polymer, and 29.5 g of carbon black powder (purchased from Columbian Chemicals, product number: Raven 430UB) was used as the conductive filler. These ingredients were mixed in a Brabender mixer at 200°C and 30 rpm for 10 minutes to obtain a mixture.

將上述混煉得到的配料混合物置於模具中,以熱壓溫度為200℃及熱壓壓力為80 kg/cm 2的條件進行熱壓4 min,以得到一厚度為0.35 mm的第一PTC層薄片。將該第一PTC層薄片夾置在上下兩片鍍鎳銅箔(作為第一金屬層及第二金屬層)之間,並在200℃及80 kg/cm 2下進行熱壓4 min,以得到一厚度為0.42 mm的PTC層合體。將該PTC層合體裁切成多個尺寸為8.0 mm × 14.7 mm的PTC小片,隨後用Co-60 γ射線以總輻射劑量150 kGy照射。 The resulting mixture was placed in a mold and hot-pressed at 200°C and 80 kg/ cm² for 4 minutes to produce a first PTC layer sheet with a thickness of 0.35 mm. This first PTC layer sheet was sandwiched between two nickel-coated copper foils (serving as the first and second metal layers) and hot-pressed at 200°C and 80 kg/ cm² for 4 minutes to produce a PTC laminate with a thickness of 0.42 mm. The PTC laminate was then cut into small pieces measuring 8.0 mm x 14.7 mm and irradiated with Co-60 gamma rays at a total radiation dose of 150 kGy.

對每一PTC小片進行鑽孔以形成兩個延伸穿過該第一金屬層、該第二金屬層及該第一PTC層薄片的穿孔,接著進行電鍍以形成第一導電貫孔及第二導電貫孔。之後,對每一PTC小片上的第一金屬層及第二金屬層進行蝕刻及裁切,以圖樣化地形成分別延伸穿過該第一金屬層及該第二金屬層以曝露出該第一PTC層薄片的第一溝槽及第二溝槽。該第一金屬層因此形成藉由該第一溝槽互相絕緣的第一電極及第一導電墊片;該第二金屬層因此形成藉由該第二溝槽互相絕緣的第二電極及第二導電墊片。該第一電極藉由該第一導電貫孔與該第二導電墊片電連接;該第二電極藉由該第二導電貫孔與該第一導電墊片電連接。如此得到E1的積體過電流保護裝置,其具有如圖2所示的結構。Each PTC chip is drilled to form two through-holes extending through the first metal layer, the second metal layer, and the first PTC layer sheet, followed by electroplating to form a first conductive via and a second conductive via. The first and second metal layers on each PTC chip are then etched and trimmed to pattern the topography to form a first trench and a second trench extending through the first and second metal layers, respectively, to expose the first PTC layer sheet. The first metal layer thereby forms a first electrode and a first conductive pad insulated from each other by the first trench; the second metal layer thereby forms a second electrode and a second conductive pad insulated from each other by the second trench. The first electrode is electrically connected to the second conductive pad via the first conductive via, and the second electrode is electrically connected to the first conductive pad via the second conductive via. Thus, an integrated overcurrent protection device E1 is obtained, which has the structure shown in FIG2 .

<實施例2 (E2)<Example 2 (E2) >

E2的積體過電流保護裝置的製程條件與E1相似,差異之處在於在形成PTC層合體的過程中,還將一厚度為0.1 mm的環氧樹脂(作為第一絕緣層)形成在該第一PTC層薄片及該第二金屬層之間,並將另一片鍍鎳銅箔(作為第三金屬層)形成在該第一PTC層薄片及該第一絕緣層之間,以得到一厚度為0.56 mm的PTC層合體。此外,該第二溝槽曝露出該第一絕緣層而不是曝露出該第一PTC層薄片,該第一導電貫孔及該第二導電貫孔還延伸穿過該第一絕緣層及該第三金屬層。如此得到E2的積體過電流保護裝置,其具有如圖3所示的結構。The manufacturing process conditions for the E2 integrated overcurrent protection device are similar to those for the E1. The difference lies in that during the formation of the PTC laminate, a 0.1 mm thick epoxy resin (as the first insulating layer) is formed between the first PTC laminate and the second metal layer, and another nickel-coated copper foil (as the third metal layer) is formed between the first PTC laminate and the first insulating layer, resulting in a PTC laminate with a thickness of 0.56 mm. In addition, the second trench exposes the first insulating layer rather than the first PTC laminate, and the first and second conductive vias extend through the first insulating layer and the third metal layer. In this way, the integrated over-current protection device E2 is obtained, which has the structure shown in FIG3 .

<實施例3 (E3)<Example 3 (E3) >

E3的積體過電流保護裝置的製程條件與E2相似,差異之處在於在形成PTC層合體的過程中,還將另一環氧樹脂(作為第二絕緣層)形成在該第一PTC層薄片及該第一金屬層之間,並將另一片鍍鎳銅箔(作為第四金屬層)形成在該第一PTC層薄片及該第二絕緣層之間,以得到一厚度為0.69 mm的PTC層合體。此外,該第一溝槽曝露出該第二絕緣層而不是曝露出該第一PTC層薄片,該第一導電貫孔及該第二導電貫孔還延伸穿過該第二絕緣層及該第四金屬層。如此得到E3的積體過電流保護裝置,其具有如圖4所示的結構。The manufacturing process conditions for the E3 integrated overcurrent protection device are similar to those for the E2. The difference lies in that during the formation of the PTC laminate, another epoxy resin (as a second insulating layer) is formed between the first PTC laminate and the first metal layer, and another nickel-coated copper foil (as a fourth metal layer) is formed between the first PTC laminate and the second insulating layer, resulting in a PTC laminate with a thickness of 0.69 mm. In addition, the first trench exposes the second insulating layer rather than the first PTC laminate, and the first and second conductive vias extend through the second insulating layer and the fourth metal layer. In this way, the integrated over-current protection device E3 is obtained, which has the structure shown in FIG4 .

<實施例4<Example 4 至6 (E4-E6)to 6 (E4-E6) >

E4-E6的積體過電流保護裝置的製程條件分別與E1-E3相似,差異之處在於在形成PTC層合體的過程中,還將一第二PTC層薄片(材料與該第一PTC層薄片相同)形成在該第一PTC層薄片及該第二金屬層之間,並將另一環氧樹脂(作為PTC絕緣層)形成在該第一PTC層薄片及該第二PTC層薄片之間,並將另外兩片鍍鎳銅箔(作為第一PTC金屬層及第二PTC金屬層)分別形成在該PTC絕緣層及該第一PTC本體之間、該PTC絕緣層及該第二PTC本體之間,以分別得到厚度為0.94 mm、1.08 mm及1.21 mm的PTC層合體。此外,該第一導電貫孔及該第二導電貫孔還延伸穿過該第二PTC層薄片、該PTC絕緣層、該第一PTC金屬層及該第二PTC金屬層,且該第一PTC層薄片及該第二PTC層薄片是以並聯方式互相電連接。如此分別得到E4-E6的積體過電流保護裝置,其分別具有如圖5-圖7所示的結構。The manufacturing process conditions of the integrated overcurrent protection devices of E4-E6 are similar to those of E1-E3. The difference is that during the process of forming the PTC laminate, a second PTC layer sheet (made of the same material as the first PTC layer sheet) is formed between the first PTC layer sheet and the second metal layer, another epoxy resin (as a PTC insulating layer) is formed between the first PTC layer sheet and the second PTC layer sheet, and two other nickel-plated copper foils (as the first PTC metal layer and the second PTC metal layer) are formed between the PTC insulating layer and the first PTC body and between the PTC insulating layer and the second PTC body, respectively, to obtain a thickness of 0.94 mm. The PTC laminate has a diameter of 1.08 mm, 1.21 mm, and 1.21 mm. Furthermore, the first conductive via and the second conductive via extend through the second PTC sheet, the PTC insulation layer, the first PTC metal layer, and the second PTC metal layer, and the first PTC sheet and the second PTC sheet are electrically connected in parallel. This results in integrated overcurrent protection devices E4-E6, respectively, having the structures shown in Figures 5-7.

<比較例1 (CE1)Comparative Example 1 (CE1) >

CE1的積體過電流保護裝置的製程條件與E1相似,差異之處在於沒有對PTC小片進行鑽孔,也沒有對PTC小片上的第一金屬層及第二金屬層進行蝕刻及裁切,也就是說,沒有形成第一導電貫孔、第二導電貫孔、第一溝槽及第二溝槽。此外,分別在該第一金屬層及該第二金屬層上電連接第一金屬引線及第二金屬引線。如此得到CE1的積體過電流保護裝置,其具有如圖1所示的結構。The manufacturing process conditions for the CE1 integrated overcurrent protection device are similar to those for the E1. The only difference is that no holes are drilled into the PTC die, and the first and second metal layers on the PTC die are not etched or trimmed. In other words, no first conductive vias, second conductive vias, first trenches, or second trenches are formed. Instead, first and second metal leads are electrically connected to the first and second metal layers, respectively. This results in the CE1 integrated overcurrent protection device, which has the structure shown in Figure 1.

性能測試Performance Testing

[[ 電阻測試Resistance test ]]

對於E1-E6與CE1的積體過電流保護裝置各取10個作為測試樣品,進行電阻測試,以確定測試樣品的初始電阻(R i)。 Ten integrated overcurrent protection devices (ICPs) from E1 to E6 and CE1 were selected as test samples and subjected to resistance testing to determine their initial resistance (R i ).

電阻測試是根據Underwriter Laboratories公司對於熱敏電阻類型的裝置(thermistor-type device)的安全標準UL 1434以歐姆計測量每個測試樣品的初始電阻。測試結果平均值分別如表1所示。 【表1】 初始電阻 (R i, ohm) 跳脫時間 (s) 切換循環測試 老化測試 R f1(ohm) R f1/R i×100% R f2(ohm) R f2/R i×100% E1 0.017 8.5 0.298 1753% 0.108 635% E2 0.016 8.2 0.275 1719% 0.095 594% E3 0.016 8.0 0.265 1656% 0.080 500% E4 0.009 9.6 0.125 1389% 0.030 333% E5 0.008 9.7 0.106 1325% 0.024 300% E6 0.008 9.8 0.105 1313% 0.022 275% CE1 0.021 11.5 0.488 2324% 0.214 1019% The resistance test was conducted using an ohmmeter to measure the initial resistance of each test sample in accordance with UL 1434, the safety standard for thermistor-type devices issued by Underwriter Laboratories. The average values of the test results are shown in Table 1. Initial resistance (R i , ohm) Jump time (s) Switching cycle test Aging test R f1 (ohm) R f1 /R i ×100% R f2 (ohm) R f2 /R i ×100% E1 0.017 8.5 0.298 1753% 0.108 635% E2 0.016 8.2 0.275 1719% 0.095 594% E3 0.016 8.0 0.265 1656% 0.080 500% E4 0.009 9.6 0.125 1389% 0.030 333% E5 0.008 9.7 0.106 1325% 0.024 300% E6 0.008 9.8 0.105 1313% 0.022 275% CE1 0.021 11.5 0.488 2324% 0.214 1019%

表1結果顯示,E1-E6的測試樣品的平均初始電阻介於0.008 ohm至0.017 ohm,明顯低於CE1的測試樣品(0.021 ohm)。The results in Table 1 show that the average initial resistance of the test samples E1-E6 ranges from 0.008 ohm to 0.017 ohm, significantly lower than the test sample CE1 (0.021 ohm).

[[ 跳脫時間測試Trip time test (Time-to-trip test)](Time-to-trip test)]

對於E1-E6與CE1的積體過電流保護裝置各取10個作為測試樣品,進行跳脫時間測試,以確定測試樣品的跳脫時間。Ten integrated overcurrent protection devices (ICPs) from E1 to E6 and CE1 were selected as test samples and subjected to a trip time test to determine their trip times.

跳脫時間測試是根據Underwriter Laboratories公司對於熱敏電阻類型的裝置的安全標準UL 1434測量每個測試樣品的跳脫時間,使用電源供應器(購自擎宏電子企業有限公司,產品型號:DSP-060-050HD)施予16 V dc的定電壓及13 A的跳脫電流,測量每個測試樣品的跳脫時間。測試結果平均值分別如表1所示。 The trip time test measured the trip time of each test sample in accordance with Underwriter Laboratories' UL 1434 safety standard for thermistor-type devices. A power supply (purchased from Qinghong Electronics Co., Ltd., model number: DSP-060-050HD) applied a constant voltage of 16 V DC and a trip current of 13 A. The average test results are shown in Table 1.

表1結果顯示,E1-E6的測試樣品的平均跳脫時間介於8.0 s至9.8 s,明顯低於CE1的測試樣品(11.5 s)。The results in Table 1 show that the average trip time of the E1-E6 test samples ranges from 8.0 s to 9.8 s, significantly lower than that of the CE1 test sample (11.5 s).

[[ 切換循環測試Switching cycle test (Switching cycle test)](Switching cycle test)]

對於E1-E6與CE1的積體過電流保護裝置各取10個作為測試樣品,進行切換循環測試,以確定測試樣品的電阻變化。Ten integrated overcurrent protection devices (ICPs) E1-E6 and CE1 were selected as test samples and subjected to a switching cycle test to determine the resistance change of the test samples.

切換循環測試是根據Underwriter Laboratories公司對於熱敏電阻類型的裝置的安全標準UL 1434測量每個測試樣品的測試後電阻(R f1)並計算電阻變化率(R f1/R i×100%),使用電源供應器(購自擎宏電子企業有限公司,產品型號:DSP-060-050HD)以16 V dc的電壓及100 A的電流分別接通E1-E6與CE1之測試樣品60秒,接著切斷60秒,如此進行6000次切換循環,測量每個測試樣品的測試後電阻並計算電阻變化率。測試結果平均值分別如表1所示。 The switching cycle test measures the post-test resistance (R f1 ) of each test sample and calculates the resistance change rate (R f1 /R i × 100%) in accordance with UL 1434, the safety standard for thermistor-type devices issued by Underwriter Laboratories. Using a power supply (purchased from Qinghong Electronics Enterprise Co., Ltd., model number: DSP -060-050HD), the test samples E1-E6 and CE1 were switched on for 60 seconds and then off for 60 seconds, with 6000 switching cycles repeated. The post-test resistance of each test sample was measured, and the resistance change rate was calculated. The average test results are shown in Table 1.

表1結果顯示,E1-E6的測試樣品的平均電阻變化率介於1313%至1753%,明顯低於CE1的測試樣品(2324%)。The results in Table 1 show that the average resistance variation of test samples E1-E6 ranges from 1313% to 1753%, significantly lower than that of test sample CE1 (2324%).

[[ 老化測試Aging test (Aging test)](Aging test)]

對於E1-E6與CE1的積體過電流保護裝置各取10個作為測試樣品,進行老化測試,以確定測試樣品的電阻變化。Ten integrated overcurrent protection devices (ICPs) from E1 to E6 and CE1 were selected as test samples and subjected to aging tests to determine the resistance change of the test samples.

老化測試是根據Underwriter Laboratories公司對於熱敏電阻類型的裝置的安全標準UL 1434測量每個測試樣品的測試後電阻(R f2)並計算電阻變化率(R f2/R i×100%),使用電源供應器(購自擎宏電子企業有限公司,產品型號:DSP-060-050HD)施予16 V dc的電壓及100 A的電流1000小時,測量每個測試樣品的測試後電阻並計算電阻變化率。測試結果平均值分別如表1所示。 The aging test was conducted in accordance with UL 1434, the Underwriter Laboratories safety standard for thermistor-type devices. The post-test resistance (R f2 ) of each test sample was measured and the resistance change rate (R f2 /R i × 100%) was calculated. A power supply (purchased from Qinghong Electronics Enterprise Co., Ltd., product model: DSP-060-050HD) was used to apply 16 V DC and 100 A for 1000 hours. The post-test resistance of each test sample was measured and the resistance change rate was calculated. The average test results are shown in Table 1.

表1結果顯示,E1-E6的測試樣品的平均電阻變化率介於275%至635%,明顯低於CE1的測試樣品(1019%)。The results in Table 1 show that the average resistance variation of test samples E1-E6 ranges from 275% to 635%, significantly lower than that of test sample CE1 (1019%).

綜上所述,本發明積體過電流保護裝置藉由形成該第一導電貫孔51及該第二導電貫孔52,以電連接該第一電極31及該第二導電墊片42,並電連接該第二電極32及該第一導電墊片41,可提升傳導性並具有良好的電性及可靠性,故確實能達成本發明之目的。In summary, the integrated overcurrent protection device of the present invention improves conductivity and has good electrical properties and reliability by forming the first conductive via 51 and the second conductive via 52 to electrically connect the first electrode 31 and the second conductive pad 42, and to electrically connect the second electrode 32 and the first conductive pad 41. Therefore, the purpose of the present invention can be achieved.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above description is merely an example of the present invention and should not be used to limit the scope of the present invention. All simple equivalent changes and modifications made within the scope of the patent application and the contents of the patent specification of the present invention are still within the scope of the present patent.

91:PTC本體 92:第一電極 93:第二電極 94:第一金屬引線 95:第二金屬引線 20:PTC元件 21:第一表面 22:第二表面 23:第一PTC本體 24:第二PTC本體 25:PTC絕緣層 26:第一PTC金屬層 27:第二PTC金屬層 30:第一金屬層 31:第一電極 32:第二電極 40:第二金屬層 41:第一導電墊片 42:第二導電墊片 51:第一導電貫孔 52:第二導電貫孔 61:第一絕緣層 62:第三金屬層 63:第二絕緣層 64:第四金屬層 71:第一溝槽 72:第二溝槽 91: PTC body 92: First electrode 93: Second electrode 94: First metal lead 95: Second metal lead 20: PTC element 21: First surface 22: Second surface 23: First PTC body 24: Second PTC body 25: PTC insulation layer 26: First PTC metal layer 27: Second PTC metal layer 30: First metal layer 31: First electrode 32: Second electrode 40: Second metal layer 41: First conductive gasket 42: Second conductive gasket 51: First conductive via 52: Second conductive via 61: First insulating layer 62: Third metal layer 63: Second insulation layer 64: Fourth metal layer 71: First trench 72: Second trench

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是現有的過電流保護裝置的立體示意圖; 圖2是本發明積體過電流保護裝置的第一實施例的立體示意圖; 圖3是本發明積體過電流保護裝置的第二實施例的立體示意圖; 圖4是本發明積體過電流保護裝置的第三實施例的立體示意圖; 圖5是本發明積體過電流保護裝置的第四實施例的立體示意圖; 圖6是本發明積體過電流保護裝置的第五實施例的立體示意圖;及 圖7是本發明積體過電流保護裝置的第六實施例的立體示意圖。 Other features and functions of the present invention are clearly illustrated in the accompanying drawings, wherein: Figure 1 is a schematic perspective view of a conventional overcurrent protection device; Figure 2 is a schematic perspective view of a first embodiment of an integrated overcurrent protection device of the present invention; Figure 3 is a schematic perspective view of a second embodiment of an integrated overcurrent protection device of the present invention; Figure 4 is a schematic perspective view of a third embodiment of an integrated overcurrent protection device of the present invention; Figure 5 is a schematic perspective view of a fourth embodiment of an integrated overcurrent protection device of the present invention; Figure 6 is a schematic perspective view of a fifth embodiment of an integrated overcurrent protection device of the present invention; and Figure 7 is a schematic perspective view of a sixth embodiment of an integrated overcurrent protection device of the present invention.

20:PTC元件 20:PTC components

21:第一表面 21: First Surface

22:第二表面 22: Second Surface

23:第一PTC本體 23: First PTC body

30:第一金屬層 30: First metal layer

31:第一電極 31: First electrode

32:第二電極 32: Second electrode

40:第二金屬層 40: Second metal layer

41:第一導電墊片 41: First conductive pad

42:第二導電墊片 42: Second conductive pad

51:第一導電貫孔 51: First conductive via

52:第二導電貫孔 52: Second conductive via

71:第一溝槽 71: First Groove

72:第二溝槽 72: Second Groove

Claims (6)

一種積體過電流保護裝置,包含:一PTC元件,包括一第一PTC本體,且該PTC元件具有兩相反的第一表面及第二表面;一第一導電單元,包括一設置於該第一表面上的第一金屬層,該第一金屬層包括一第一電極及一與該第一電極絕緣的第一導電墊片,該第一金屬層形成有一第一溝槽,以曝露出該第一表面,並使該第一電極與該第一導電墊片絕緣;一第二導電單元,包括一設置於該第二表面上的第二金屬層,該第二金屬層包括一第二電極及一與該第二電極絕緣的第二導電墊片,該第二金屬層形成有一第二溝槽,以曝露出該第二表面,並使該第二電極與該第二導電墊片絕緣;一第一導電貫孔,延伸穿過該第一導電單元及該PTC元件,以電連接該第一電極及該第二導電墊片;及一第二導電貫孔,延伸穿過該第二導電單元及該PTC元件,以電連接該第二電極及該第一導電墊片。An integrated overcurrent protection device comprises: a PTC element, comprising a first PTC body, and the PTC element has two opposite first and second surfaces; a first conductive unit, comprising a first metal layer disposed on the first surface, the first metal layer comprising a first electrode and a first conductive pad insulated from the first electrode, the first metal layer forming a first groove to expose the first surface and insulate the first electrode from the first conductive pad; a second conductive unit, comprising a first conductive pad disposed on the second surface A second metal layer on the surface includes a second electrode and a second conductive pad insulated from the second electrode, the second metal layer forming a second trench to expose the second surface and insulate the second electrode from the second conductive pad; a first conductive through-hole extending through the first conductive unit and the PTC element to electrically connect the first electrode and the second conductive pad; and a second conductive through-hole extending through the second conductive unit and the PTC element to electrically connect the second electrode and the first conductive pad. 如請求項1所述的積體過電流保護裝置,其中,該第一導電貫孔及該第二導電貫孔中至少其中一者與該積體過電流保護裝置的側壁相間隔,該積體過電流保護裝置的側壁互連於該第一金屬層相反於該第一表面的頂面及該第二金屬層相反於該第二表面的底面。An integrated over-current protection device as described in claim 1, wherein at least one of the first conductive via and the second conductive via is spaced apart from the side wall of the integrated over-current protection device, and the side wall of the integrated over-current protection device is interconnected to the top surface of the first metal layer opposite to the first surface and the bottom surface of the second metal layer opposite to the second surface. 如請求項1所述的積體過電流保護裝置,其中,該PTC元件還包括:一第二PTC本體;一PTC絕緣層,設置於該第一PTC本體及該第二PTC本體之間;一第一PTC金屬層,設置於該PTC絕緣層及該第一PTC本體之間;及一第二PTC金屬層,設置於該PTC絕緣層及該第二PTC本體之間。The integrated overcurrent protection device as described in claim 1, wherein the PTC element further includes: a second PTC body; a PTC insulation layer disposed between the first PTC body and the second PTC body; a first PTC metal layer disposed between the PTC insulation layer and the first PTC body; and a second PTC metal layer disposed between the PTC insulation layer and the second PTC body. 如請求項3所述的積體過電流保護裝置,其中,該第一PTC本體及該第二PTC本體是以並聯方式互相電連接。The integrated overcurrent protection device as described in claim 3, wherein the first PTC body and the second PTC body are electrically connected to each other in parallel. 如請求項1所述的積體過電流保護裝置,其中,該第一導電貫孔還延伸穿過該第二導電單元。The integrated over-current protection device as described in claim 1, wherein the first conductive through-hole also extends through the second conductive unit. 如請求項1所述的積體過電流保護裝置,其中,該第二導電貫孔還延伸穿過該第一導電單元。The integrated over-current protection device as described in claim 1, wherein the second conductive through-hole also extends through the first conductive unit.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110175700A1 (en) * 2006-04-14 2011-07-21 Bourns, Inc. Conductive polymer electronic devices with surface mountable configuration and methods for manufacturing same
TW201421496A (en) * 2012-11-29 2014-06-01 Polytronics Technology Corp Surface mountable over-current protection device
TW201438034A (en) * 2013-03-22 2014-10-01 Polytronics Technology Corp Over-current protection device
TW201804482A (en) * 2016-07-29 2018-02-01 聚鼎科技股份有限公司 Surface mountable over-current protection device
US20190306970A1 (en) * 2016-10-17 2019-10-03 Cyg Wayon Circuit Protection Co., Ltd. Circuit protection assembly
CN115472364A (en) * 2021-06-10 2022-12-13 聚鼎科技股份有限公司 Surface adhesive overcurrent protection element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110175700A1 (en) * 2006-04-14 2011-07-21 Bourns, Inc. Conductive polymer electronic devices with surface mountable configuration and methods for manufacturing same
TW201421496A (en) * 2012-11-29 2014-06-01 Polytronics Technology Corp Surface mountable over-current protection device
TW201438034A (en) * 2013-03-22 2014-10-01 Polytronics Technology Corp Over-current protection device
TW201804482A (en) * 2016-07-29 2018-02-01 聚鼎科技股份有限公司 Surface mountable over-current protection device
US20190306970A1 (en) * 2016-10-17 2019-10-03 Cyg Wayon Circuit Protection Co., Ltd. Circuit protection assembly
CN115472364A (en) * 2021-06-10 2022-12-13 聚鼎科技股份有限公司 Surface adhesive overcurrent protection element

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