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TWI891249B - Production method of low-carbon hydrogen - Google Patents

Production method of low-carbon hydrogen

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Publication number
TWI891249B
TWI891249B TW113106015A TW113106015A TWI891249B TW I891249 B TWI891249 B TW I891249B TW 113106015 A TW113106015 A TW 113106015A TW 113106015 A TW113106015 A TW 113106015A TW I891249 B TWI891249 B TW I891249B
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silicon
waste
hydrogen
metallic silicon
metallic
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TW113106015A
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Chinese (zh)
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TW202534033A (en
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邱顯堂
謝政哲
柯永莨
朱筠萱
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光宇應用材料股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/36Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

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  • Silicon Compounds (AREA)
  • Treatment Of Sludge (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)

Abstract

The present invention discloses a low-carbon hydrogen production method, which includes step (a): drying the waste silicon mud; step (b): crushing the dried waste silicon mud and screening the crushed dried waste silicon mud to obtain waste silicon mud powder containing 40wt% to 95wt% of silicon metal and silicon oxide, wherein the silicon metal accounts for 5wt% to 40wt% of the combined content of the silicon metal and silicon oxide; and step (c): mixing the silicon metal and silicon oxide with an aqueous alkali metal solution, and controlling the reaction temperature between 100°C and 150°C to obtain hydrogen.

Description

低碳氫氣的製備方法Preparation method of low-carbon hydrogen

本發明關於一種製備方法,特別關於一種低碳氫氣的製備方法。 The present invention relates to a preparation method, in particular to a preparation method for low-carbon hydrogen.

半導體攸關現代電器的運作,性能不斷增強,設計日益複雜、精密,用途也愈來愈廣。有了半導體,我們才能使用筆電、手機、平板電腦,半導體也促進當代汽車電子、航空電子設備、醫療設備的發展,並大幅提高了大、小型家電及照明設備的能源效率,不啻為現代科技的重要基礎,但卻也製造出大量的廢棄物。半導體廢棄物中含有多種重金屬,例如鉛、鎘,若進到人體會造成神經病變;而六價鉻、砷則有可能致癌。另外,半導體廢棄物中,強酸、強鹼也很常用,若人體不小心碰觸,嚴重的話會有立即性的危險。 Semiconductors are crucial to the operation of modern electronics, with ever-increasing performance, increasingly complex and sophisticated designs, and a growing range of applications. Thanks to semiconductors, we can use laptops, mobile phones, and tablets. Semiconductors have also fueled the development of modern automotive electronics, avionics, and medical equipment, significantly improving the energy efficiency of large and small appliances and lighting. While they are a crucial foundation of modern technology, they also generate significant amounts of waste. Semiconductor waste contains a variety of heavy metals, such as lead and cadmium, which can cause neurological problems if introduced into the human body; hexavalent chromium and arsenic, which can cause cancer. Furthermore, strong acids and bases are often found in semiconductor waste, posing an immediate risk if accidentally contacted by the human body.

以半導體製程所產生的廢矽泥來說,其是晶片拋光或減薄製程中,使用化學腐蝕或機械力對矽晶圓或其他基板材料進行平坦化處理所產生的。在現有的作法中,經切割或研磨製程所產生的廢矽泥大都經廢水處理將固液分離,固體經濃縮、收集後,委由清除處理機構進行掩埋處理,但是,廢矽泥掩埋處理容易對環境造成汙染,且廢矽泥含有大量的氧化矽(SiOx,x=1,2)或金屬矽,若直接掩埋也極為浪費資源。 Waste silicon sludge generated in semiconductor manufacturing is produced during wafer polishing or thinning processes, where chemical etching or mechanical forces are used to planarize silicon wafers or other substrate materials. Currently, waste silicon sludge generated during cutting or grinding processes is typically treated with wastewater to separate the solid and liquid components. The solids are then concentrated and collected before being sent to a disposal facility for landfill disposal. However, landfilling waste silicon sludge can easily pollute the environment, and since waste silicon sludge contains large amounts of silicon oxide (SiOx, x=1,2) or metallic silicon, direct landfilling is a significant waste of resources.

另外,目前地球石油能源有限且環保意識抬頭的情況下,汽車、發電機設備等正積極地尋找替代石油且兼具環保的新能源。其中,由於燃料電池(Fuel Cell)是利用氫氣與氧氣產生反應,進而產生大量電能,因此成為適合於下一代的動力來源。燃料電池是一種發電裝置,但不像一般非充電電池一樣用完就丟棄,也不像充電電池一樣,用完須繼續充電。正如其名,燃料電池是繼續添 加燃料以維持其電力,所需的燃料是氫氣,其之所以被歸類為新能源,原因就在此。 Furthermore, with the current global availability of oil and rising environmental awareness, automobiles, power generation equipment, and other sectors are actively seeking environmentally friendly alternatives to oil. Fuel cells, which utilize hydrogen and oxygen to generate large amounts of electricity through a reaction, are a promising next-generation power source. Fuel cells are a type of power generation device, but unlike conventional non-rechargeable batteries, they are not discarded upon use, nor do they require recharging like rechargeable batteries. As their name suggests, fuel cells require continuous refueling to maintain their power. This fuel is hydrogen, which is why they are classified as a new energy source.

燃料電池的運作原理是電池中含有陰、陽極兩個電極,兩個電極之間為具有滲透性的薄膜所構成,且兩個電極之間充滿電解液。其中,氫氣由燃料電池的陽極進入,氧氣(或空氣)則由陰極進入燃料電池,經由催化劑的作用,可使陽極的氫原子分解成兩個氫質子(proton)與兩個電子(electron)。其中,質子被氧吸引到薄膜的另一邊,電子則經由外電路形成電流後到達陰極。在陰極催化劑的作用下,氫質子、氧及電子發生反應形成水分子,因此,水可說是燃料電池唯一的排放物。由於燃料電池是利用氫氣及氧氣的化學反應產生電流及水,不但完全無污染,也避免了傳統電池充電耗時的問題,是目前最具發展前景的新能源方式,如能普及的應用在車輛及其他高污染之發電工具上,將能顯著改善空氣污染及溫室效應。 The operating principle of a fuel cell is that it contains two electrodes, a cathode and an anode, separated by a permeable membrane. This space is filled with an electrolyte. Hydrogen enters the anode, while oxygen (or air) enters the cathode. A catalyst breaks down the hydrogen atoms in the anode into two hydrogen protons and two electrons. The protons are attracted to the oxygen and flow to the other side of the membrane, while the electrons flow through an external circuit to form an electric current and reach the cathode. Under the action of the cathode catalyst, the hydrogen protons, oxygen, and electrons react to form water molecules. Therefore, water is arguably the only emission from fuel cells. Because fuel cells utilize a chemical reaction between hydrogen and oxygen to generate electricity and water, they are not only completely pollution-free but also avoid the time-consuming charging of traditional batteries. They are currently the most promising new energy source. If widely adopted in vehicles and other high-pollution power generation vehicles, they will significantly reduce air pollution and greenhouse gas emissions.

目前可直接供應燃料電池使用之氫氣的產生方法,是先以二氧化碳雷射裂解尺寸為10~100奈米的純矽粉,再將裂解後的純矽粉通入鹼水後產生氫氣。然而,利用二氧化碳雷射裂解矽粉的設備及過程增加了氫氣生產的複雜度及成本,且需提供額外的耗能(即二氧化碳雷射)。此外,還需要將矽粉顆粒的尺寸限制於10~100奈米之間。 The current method for producing hydrogen that can be directly supplied to fuel cells involves first using a carbon dioxide laser to crack pure silicon powder with a size of 10 to 100 nanometers, then passing the cracked pure silicon powder through alkaline water to produce hydrogen. However, the equipment and process of using a carbon dioxide laser to crack silicon powder increases the complexity and cost of hydrogen production and requires additional energy (i.e., the carbon dioxide laser). Furthermore, the size of the silicon powder particles must be limited to between 10 and 100 nanometers.

因此,在循環經濟和綠能當道的時代,如何將半導體製程所產生的廢棄物轉化為可再利用的氫氣,同時達到節能減碳及綠色環保的要求,已成為所屬技術領域亟欲解決的問題之一。 Therefore, in an era dominated by circular economy and green energy, converting waste generated by semiconductor manufacturing processes into reusable hydrogen while simultaneously meeting energy conservation, carbon reduction, and environmental protection requirements has become a pressing issue in the relevant technology field.

有鑑於上述課題,本發明的目的為提供一種低碳氫氣的製備方法。本發明的製備方法可以達到節能減碳的效果,同時也可達到綠色與環保的要求。 In light of the above-mentioned issues, the present invention aims to provide a method for producing low-carbon hydrogen. This method can achieve energy conservation and carbon reduction while also meeting green and environmental protection requirements.

為達上述目的,依據本發明之一種低碳氫氣的製備方法,包括步驟(a):將廢矽泥進行乾燥;步驟(b):粉碎及篩選乾燥後的廢矽泥,篩選後得到的廢矽泥粉末中,金屬矽及氧化矽(SiOx,x=1,2)的重量百分比(wt%)介於40至95之間,其中金屬矽佔金屬矽及氧化矽含量中的5wt%至40wt%之間;以及步驟 (c):使步驟(b)的金屬矽及氧化矽與鹼金屬水溶液進行混合反應,並控制反應溫度在100℃至150℃之間,得到氫氣。 To achieve the above objectives, the present invention provides a method for preparing low-carbon hydrogen, comprising the steps of (a) drying waste silicon sludge; (b) crushing and screening the dried waste silicon sludge, wherein the weight percentage (wt%) of metallic silicon and silicon oxide (SiOx, x = 1, 2) in the screened waste silicon sludge powder is between 40 and 95, with metallic silicon accounting for between 5 and 40 wt% of the total metallic silicon and silicon oxide content; and (c) mixing the metallic silicon and silicon oxide from step (b) with an alkaline metal aqueous solution, controlling the reaction temperature between 100°C and 150°C, to produce hydrogen.

在一實施例中,在步驟(a)中,廢矽泥是半導體製程中所產生者。 In one embodiment, in step (a), the waste silicon sludge is generated during the semiconductor manufacturing process.

在一實施例中,在步驟(a)中,乾燥後的廢矽泥的含水率小於10wt%。 In one embodiment, in step (a), the moisture content of the dried waste silicon sludge is less than 10 wt%.

在一實施例中,在步驟(c)中,鹼金屬水溶液為氫氧化鈉水溶液。 In one embodiment, in step (c), the alkaline metal aqueous solution is a sodium hydroxide aqueous solution.

在一實施例中,氫氧化鈉水溶液的濃度為45wt%。 In one embodiment, the concentration of the aqueous sodium hydroxide solution is 45 wt%.

在一實施例中,在步驟(c)中,是藉由控制金屬矽及氧化矽中的金屬矽含量來控制金屬矽及氧化矽與鹼金屬水溶液的反應溫度在100℃至150℃之間。 In one embodiment, in step (c), the reaction temperature of the metallic silicon and silicon oxide with the alkaline metal aqueous solution is controlled to be between 100°C and 150°C by controlling the metallic silicon content in the metallic silicon and silicon oxide.

在一實施例中,金屬矽的含量越高,反應溫度越趨向150℃。 In one embodiment, the higher the content of metallic silicon, the higher the reaction temperature tends to be 150°C.

在一實施例中,在步驟(c)中,反應時間大於或等於2小時。 In one embodiment, in step (c), the reaction time is greater than or equal to 2 hours.

承上所述,在本發明的低碳氫氣的製備方法中,是利用廢矽泥並藉由金屬矽及氧化矽中含有的金屬矽,使金屬矽及氧化矽與鹼金屬水溶液所產生的自放熱反應來達到所需的反應溫度以產出氫氣。藉此,相較於現有以二氧化碳雷射製備氫氣的方法來說,本發明的製備方法由於不需額外的耗能即可產生氫氣,因此可以達到節能減碳的效果。另外,由於所使用的原料:廢矽泥是半導體製程中所產生的製程廢棄物,因此,本發明的製備方法也可以達到綠色與環保的要求。 As described above, the low-carbon hydrogen production method of the present invention utilizes waste silicon sludge and, through the exothermic reaction between metallic silicon and silicon oxide and an alkaline metal aqueous solution, generates hydrogen by utilizing the metallic silicon contained in the waste silicon sludge. This reaction temperature is then reached to produce the desired hydrogen. Compared to existing methods using carbon dioxide lasers to produce hydrogen, the present method requires no additional energy to produce hydrogen, thus achieving energy savings and carbon reduction. Furthermore, since the waste silicon sludge used is a process waste generated during semiconductor manufacturing, the present method also meets green and environmentally friendly requirements.

a,b,c:步驟 a,b,c: Steps

圖1為本發明一實施例之一種低碳氫氣的製備方法的流程步驟圖。 Figure 1 is a flow chart of a method for preparing low-carbon hydrogen according to an embodiment of the present invention.

以下將參照相關圖式,說明依本發明之低碳氫氣的製備方法,其中相同的元件將以相同的參照符號加以說明。 The following describes the method for preparing low-carbon hydrogen according to the present invention with reference to the relevant figures, wherein the same elements are represented by the same reference symbols.

圖1為本發明一實施例之一種低碳氫氣的製備方法的流程步驟圖。如圖1所示,本發明之低碳氫氣的製備方法包括步驟(a)至步驟(c)。以下介紹各步驟的詳細內容。 Figure 1 is a flow chart of a method for preparing low-carbon hydrogen according to an embodiment of the present invention. As shown in Figure 1 , the method for preparing low-carbon hydrogen according to the present invention includes steps (a) to (c). The details of each step are described below.

首先,步驟(a)為:將廢矽泥進行乾燥。其中,廢矽泥的來源可以例如是半導體製程中所產出者,例如但不限於為報廢晶圓、晶圓切割製程、晶圓研磨或是封裝封測廠中所產生的廢矽泥。在步驟(a)中,是將半導體製程所產出的廢矽泥投入乾燥爐中進行乾燥,在去除水份之後,可得到例如含水率小於10wt%(重量百分比)的乾燥廢矽泥。 First, step (a) involves drying the waste silicon sludge. The waste silicon sludge can originate from semiconductor manufacturing processes, such as, but not limited to, scrapped wafers, wafer dicing processes, wafer grinding, or waste silicon sludge generated in packaging and testing plants. In step (a), the waste silicon sludge generated from the semiconductor process is placed in a drying furnace for drying. After removing the moisture, dried waste silicon sludge with a moisture content of less than 10 wt% (weight percentage) is obtained.

接著,進行步驟(b):粉碎乾燥後的廢矽泥,篩選後得到的廢矽泥粉末中,金屬矽及氧化矽(SiOx,x=1,2)的重量百分比(wt%)介於40至95之間,其中金屬矽佔金屬矽及氧化矽含量中的5wt%至40wt%之間。在此,是依廢矽泥中的金屬矽含量進行區分,篩選出金屬矽及氧化矽含量介於40wt%至95wt%之間,且金屬矽(Si)佔金屬矽及氧化矽含量中的5wt%至40wt%,這麼做的目的是為了後續步驟(c)的混合反應中控制反應溫度之用,亦即藉由控制金屬矽的含量比例來使步驟(c)的化學反應達到反應所需的溫度。 Next, step (b) is performed: the dried waste silicon sludge is crushed and screened to obtain a waste silicon sludge powder having a weight percentage (wt%) of metallic silicon and silicon oxide (SiOx, x=1,2) ranging from 40 to 95%, of which metallic silicon accounts for between 5wt% and 40wt% of the total content of metallic silicon and silicon oxide. Here, waste silicon sludge is separated based on its metallic silicon content, screening out those with metallic silicon and silicon oxide contents between 40wt% and 95wt%, with metallic silicon (Si) accounting for 5wt% to 40wt% of the total. This is done to control the reaction temperature in the subsequent mixing reaction in step (c). By controlling the metallic silicon content, the chemical reaction in step (c) reaches the required reaction temperature.

最後,進行步驟(c):使步驟(b)的金屬矽及氧化矽與鹼金屬水溶液進行混合反應,並控制反應溫度在100℃至150℃之間,得到氫氣。在步驟(c)中,如前所述,是藉由控制金屬矽及氧化矽中的金屬矽含量來控制與鹼金屬水溶液反應時的反應溫度,使反應溫度可介於100℃至150℃之間,藉此得到矽酸鈉水溶液。其中,氧化矽中的金屬矽含量越高,反應溫度則越高,亦即越趨向150℃。另外,在步驟(c)中,金屬矽及氧化矽與鹼金屬水溶液進行混合反應的反應時間可大於或等於2小時,讓金屬矽及氧化矽與鹼金屬水溶液可充分反應。 Finally, step (c) is performed: the metallic silicon and silicon oxide from step (b) are mixed and reacted with an alkaline metal aqueous solution at a temperature controlled between 100°C and 150°C to produce hydrogen. In step (c), as previously described, the reaction temperature is controlled by adjusting the metallic silicon content in the metallic silicon and silicon oxide to maintain a temperature between 100°C and 150°C, thereby producing an aqueous sodium silicate solution. The higher the metallic silicon content in the silicon oxide, the higher the reaction temperature, i.e., closer to 150°C. In addition, in step (c), the reaction time for the mixed reaction of metallic silicon and silicon oxide with the alkaline metal aqueous solution may be greater than or equal to 2 hours to allow the metallic silicon and silicon oxide to fully react with the alkaline metal aqueous solution.

在一些實施例中,鹼金屬水溶液可例如但不限於為氫氧化鈉水溶液(NaOH(aq)),且氫氧化鈉水溶液的濃度可例如為45wt%。在一些實施例中,可將步驟(b)得到的金屬矽及氧化矽與濃度為45wt%的氫氧化鈉水溶液投入反應釜中,藉由控制金屬矽及氧化矽中的金屬矽含量比例在5wt%至40wt%之間,利用金屬矽及氧化矽與氫氧化鈉反應時的自放熱反應,使反應溫度控制在100℃至150℃之間,經反應2小時後得到氫氣(H2)。 In some embodiments, the alkaline metal aqueous solution may be, for example, but not limited to, an aqueous sodium hydroxide solution (NaOH (aq) ), and the concentration of the aqueous sodium hydroxide solution may be, for example, 45 wt%. In some embodiments, the metallic silicon and silicon oxide obtained in step (b) and a 45 wt% aqueous sodium hydroxide solution may be added to a reaction vessel. By controlling the metallic silicon content in the metallic silicon and silicon oxide between 5 wt% and 40 wt%, and utilizing the exothermic reaction of the metallic silicon and silicon oxide with the sodium hydroxide, the reaction temperature is controlled between 100°C and 150°C, and hydrogen ( H2 ) is produced after 2 hours of reaction.

在此,步驟(c)的反應式可為:Si+2H2O→SiO2+2H2+熱量(339KJ/mole)...反應式(1) Here, the reaction formula of step (c) can be: Si + 2H 2 O → SiO 2 + 2H 2 + heat (339KJ/mole) ... reaction formula (1)

SiO2+2NaOH→Na2SiO3+H2O+熱量(85KJ/mole)...反應式(2)。 SiO 2 + 2NaOH → Na 2 SiO 3 + H 2 O + heat (85KJ/mole)... Reaction equation (2).

在一些應用例中,氫氣可應用於例如燃料電池,由於燃料電池是利用氫氣及氧氣的化學反應來產生電流及水,不但完全無污染(產物是水),也避免了傳統電池充電耗時的問題,是目前最具發展前景的新能源方式,如能普及的應用在車輛及其他高污染之發電工具上,將能顯著改善空氣污染及溫室效應。 In some applications, hydrogen can be used in fuel cells, for example. Because fuel cells utilize a chemical reaction between hydrogen and oxygen to generate electricity and water, they are not only completely pollution-free (the product is water), but also avoid the time-consuming charging of traditional batteries. They are currently one of the most promising new energy sources. If widely used in vehicles and other high-pollution power generation vehicles, they will significantly reduce air pollution and greenhouse gas emissions.

值得一提的是,在一些後續的應用例子中,如果再使步驟(c)的矽酸鈉水溶液與硫酸(H2SO4)進行反應,再進行固液分離及乾燥後可以得到二氧化矽(SiO2)。在此,反應時間可介於30分鐘至2小時之間,而得到的二氧化矽純度可例如大於94wt%。其反應式可為:Na2SiO3+H2SO4→Na2SO4+SiO2+H2O It is worth mentioning that in some subsequent applications, silicon dioxide (SiO 2 ) can be obtained by reacting the sodium silicate aqueous solution in step (c) with sulfuric acid (H 2 SO 4 ), followed by solid-liquid separation and drying. The reaction time can range from 30 minutes to 2 hours, and the resulting silicon dioxide can have a purity greater than 94 wt %. The reaction equation is: Na 2 SiO 3 + H 2 SO 4 → Na 2 SO 4 + SiO 2 + H 2 O

前述的硫酸的濃度可介於30wt%與80wt%之間,且硫酸的來源同樣可以來自半導體製程所產生的廢硫酸。舉例來說,晶圓代工廠在晶圓製程中以高純度之硫酸清洗矽晶圓表面,主要用於光阻去除後之矽晶圓清洗,使用的硫酸添加了過氧化氫(H2O2),使其成為一強氧化劑,而將晶片中的有機物氧化分解為CO2和H2O,因此產生了廢硫酸,將該廢硫酸應用於此,同樣可達到循環經濟及資源再利用的目的。 The concentration of the aforementioned sulfuric acid can range between 30wt% and 80wt%, and the source of the sulfuric acid can also come from waste sulfuric acid generated during semiconductor manufacturing. For example, wafer foundries use high-purity sulfuric acid to clean the surface of silicon wafers during wafer manufacturing, primarily for cleaning silicon wafers after photoresist removal. The sulfuric acid used is added with hydrogen peroxide ( H2O2 ), making it a strong oxidizing agent. This oxidizes organic matter in the wafers into CO2 and H2O , generating waste sulfuric acid. Applying this waste sulfuric acid for this purpose can also achieve the goals of circular economy and resource reuse.

以下介紹六個實施例,證明本發明的製備方法確實可製造出氫氣(可參考以下表一)。 The following six examples demonstrate that the preparation method of the present invention can indeed produce hydrogen (see Table 1 below).

實施例一: Example 1:

秤取3g乾燥後廢矽泥粉末(金屬矽及氧化矽含量為50.52wt%,金屬矽佔金屬矽及氧化矽中的9.36wt%),加入3.9g濃度為45%的液鹼(氫氧化鈉水溶液)與20g的水於反應釜中均勻攪拌反應,反應溫度可因放熱反應自然加熱至103.8℃,待反應2小時後可得到0.492公升(L)的氫氣。 Weigh 3g of dried waste silicon mud powder (metallic silicon and silicon oxide content: 50.52wt%, with metallic silicon accounting for 9.36wt% of the total). Add 3.9g of 45% liquid alkali (sodium hydroxide aqueous solution) and 20g of water to the mixture in a reactor and stir uniformly. The reaction temperature naturally rises to 103.8°C due to the exothermic reaction. After 2 hours of reaction, 0.492 liters (L) of hydrogen are produced.

實施例二: Example 2:

秤取3g乾燥後廢矽泥粉末(金屬矽及氧化矽含量為58.07wt%,金屬矽佔金屬矽及氧化矽中的12.74wt%),加入3.9g濃度為45%的液鹼與20g的水於 反應釜中均勻攪拌反應,反應溫度可因放熱反應自然加熱至119.6℃,待反應2小時後可得到0.670L的氫氣。 Weigh 3g of dried waste silica powder (metallic silicon and silicon oxide content: 58.07wt%, with metallic silicon accounting for 12.74wt% of the total). Add 3.9g of 45% liquid alkali and 20g of water to the mixture in a reactor and stir evenly. The reaction temperature naturally rises to 119.6°C due to the exothermic reaction. After 2 hours of reaction, 0.670L of hydrogen is produced.

實施例三: Example 3:

秤取3g乾燥後廢矽泥粉末(金屬矽及氧化矽含量為76.39wt%,金屬矽佔金屬矽及氧化矽中的14.49wt%),加入3.9g濃度為45%的液鹼與20g的水於反應釜中均勻攪拌反應,反應溫度可因放熱反應自然加熱至135℃,待反應2小時後可得到0.762L的氫氣。 Weigh 3g of dried waste silicon mud powder (metallic silicon and silicon oxide content: 76.39wt%, with metallic silicon accounting for 14.49wt% of the total). Add 3.9g of 45% liquid alkali and 20g of water to the mixture in a reactor and stir evenly. The reaction temperature will naturally rise to 135°C due to the exothermic reaction. After 2 hours of reaction, 0.762L of hydrogen will be produced.

實施例四: Example 4:

秤取3g乾燥後廢矽泥粉末(金屬矽及氧化矽含量為75.80wt%,金屬矽佔金屬矽及氧化矽中的16.61wt%),加入3.9g濃度為45%的液鹼與20g的水於反應釜中均勻攪拌反應,反應溫度可因放熱反應自然加熱至142℃,待反應2h小時後可得到0.874L的氫氣。 Weigh 3g of dried waste silicon mud powder (metallic silicon and silicon oxide content: 75.80wt%, with metallic silicon accounting for 16.61wt% of the total). Add 3.9g of 45% liquid alkali and 20g of water to the mixture in a reactor and stir evenly. The reaction temperature naturally rises to 142°C due to the exothermic reaction. After 2 hours of reaction, 0.874L of hydrogen gas is produced.

實施例五: Example 5:

秤取3g乾燥後廢矽泥粉末(金屬矽及氧化矽含量為76.92wt%,金屬矽佔金屬矽及氧化矽中的20.16wt%),加入3.9g濃度為45%的液鹼與20g的水於反應釜中均勻攪拌反應,反應溫度可因放熱反應自然加熱至145℃,待反應2h小時後可得到1.060L的氫氣。 Weigh 3g of dried waste silicon mud powder (metallic silicon and silicon oxide content: 76.92wt%, with metallic silicon accounting for 20.16wt% of the total). Add 3.9g of 45% liquid alkali and 20g of water to the mixture in a reactor and stir evenly. The reaction temperature will naturally rise to 145°C due to the exothermic reaction. After 2 hours of reaction, 1.060L of hydrogen will be produced.

實施例六: Example 6:

秤取3g乾燥後廢矽泥粉末(金屬矽及氧化矽含量為82.16wt%,金屬矽佔金屬矽及氧化矽中的32.60wt%),加入3.9g濃度為45%的液鹼與20g的水於反應釜中均勻攪拌反應,反應溫度可因放熱反應自然加熱至149.5℃,待反應2小時後可得到1.724L的氫氣。 Weigh 3g of dried waste silicon mud powder (metallic silicon and silicon oxide content: 82.16wt%, with metallic silicon accounting for 32.60wt% of the total). Add 3.9g of 45% liquid alkali and 20g of water to the mixture in a reactor and stir evenly. The reaction temperature naturally rises to 149.5°C due to the exothermic reaction. After 2 hours of reaction, 1.724L of hydrogen is produced.

上述六個實施例整理如下表一所示。 The above six embodiments are summarized in Table 1 below.

由上述六個實施例可知,本發明不以傳統利用二氧化碳雷射裂解矽粉的設備及過程產生氫氣,而是利用廢矽泥並藉由控制金屬矽及氧化矽中的金屬矽含量與鹼金屬(氫氧化鈉)水溶液產生的自放熱反應來達到所需的反應溫度以產出氫氣,由於不需額外耗能即可產生氫氣,因此可以達到節能減碳的效益。另外,也由於所使用的原料:廢矽泥是半導體製程中所產生的廢棄物,因此,本發明的製備方法還可以達到綠色與環保的要求。 As can be seen from the six aforementioned embodiments, the present invention does not generate hydrogen using the traditional equipment and process of carbon dioxide laser cracking of silicon powder. Instead, it utilizes waste silicon sludge and controls the metallic silicon content in metallic silicon and silicon oxide to produce an exothermic reaction with an aqueous alkaline metal (sodium hydroxide) solution to achieve the desired reaction temperature for hydrogen production. Since hydrogen is generated without requiring additional energy, it can achieve energy conservation and carbon reduction benefits. Furthermore, since the raw material used, waste silicon sludge, is a waste product generated during semiconductor manufacturing, the preparation method of the present invention can also meet green and environmentally friendly requirements.

綜上所述,在本發明的低碳氫氣的製備方法中,是利用廢矽泥並藉由金屬矽及氧化矽中含有的金屬矽,使金屬矽及氧化矽與鹼金屬水溶液所產生的自放熱反應來達到所需的反應溫度以產出氫氣。藉此,相較於現有以二氧化碳雷射製備氫氣的方法來說,本發明的製備方法由於不需額外的耗能即可產生氫氣,因此可以達到節能減碳的效果。另外,由於所使用的原料:廢矽泥是半導體製程中所產生的製程廢棄物,因此,本發明的製備方法也可以達到綠色與環保的要求。 In summary, the low-carbon hydrogen production method of the present invention utilizes waste silicon sludge and, through the exothermic reaction between metallic silicon and silicon oxide and an alkaline metal aqueous solution, generates hydrogen by utilizing the metallic silicon contained in the metal silicon and silicon oxide. This reaction temperature is then reached to produce the desired hydrogen. Compared to existing methods using carbon dioxide lasers to produce hydrogen, the present method requires no additional energy to produce hydrogen, thus achieving energy savings and carbon reduction. Furthermore, since the raw material used, waste silicon sludge, is a process waste generated during semiconductor manufacturing, the present method also meets green and environmentally friendly requirements.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or variations that do not depart from the spirit and scope of this invention shall be included in the scope of the patent application attached hereto.

a,b,c:步驟 a,b,c: Steps

Claims (8)

一種低碳氫氣的製備方法,包括: 步驟(a):將廢矽泥進行乾燥; 步驟(b):粉碎及篩選乾燥後的廢矽泥,篩選後得到的廢矽泥粉末中,金屬矽及氧化矽(SiOx,x =1,2)介於40 wt%至95 wt%之間,其中金屬矽佔金屬矽及氧化矽含量中的5 wt%至40 wt%之間;以及 步驟(c):使步驟(b)的金屬矽及氧化矽與鹼金屬水溶液進行混合反應,並控制反應溫度在100˚C至150˚C之間,得到氫氣。 A method for preparing low-carbon hydrogen comprises: Step (a): drying waste silicon sludge; Step (b): crushing and screening the dried waste silicon sludge, wherein the waste silicon sludge powder obtained after screening comprises between 40 wt% and 95 wt% of metallic silicon and silicon oxide (SiOx, x = 1, 2), wherein metallic silicon accounts for between 5 wt% and 40 wt% of the total metallic silicon and silicon oxide content; and Step (c): mixing and reacting the metallic silicon and silicon oxide obtained in step (b) with an alkaline metal aqueous solution, controlling the reaction temperature between 100°C and 150°C, to produce hydrogen. 如請求項1所述的製備方法,其中,在步驟(a)中,廢矽泥是半導體製程中所產生者。The preparation method of claim 1, wherein in step (a), the waste silicon sludge is generated in a semiconductor manufacturing process. 如請求項1所述的製備方法,其中,在步驟(a)中,乾燥後的廢矽泥的含水率小於10 wt%。The preparation method of claim 1, wherein in step (a), the water content of the dried waste silicon sludge is less than 10 wt%. 如請求項1所述的製備方法,其中,在步驟(c)中,鹼金屬水溶液為氫氧化鈉水溶液。The preparation method as described in claim 1, wherein in step (c), the alkaline metal aqueous solution is a sodium hydroxide aqueous solution. 如請求項4所述的製備方法,其中,該氫氧化鈉溶液的濃度為45 wt%。The preparation method as described in claim 4, wherein the concentration of the sodium hydroxide solution is 45 wt%. 如請求項1所述的製備方法,其中,在步驟(c)中,是藉由控制金屬矽及氧化矽中的金屬矽含量來控制金屬矽及氧化矽與鹼金屬水溶液的反應溫度維持在100˚C至150˚C之間。The preparation method of claim 1, wherein in step (c), the reaction temperature of the metallic silicon and silicon oxide with the alkaline metal aqueous solution is controlled to be maintained between 100°C and 150°C by controlling the metallic silicon content in the metallic silicon and silicon oxide. 如請求項6所述的製備方法,其中,該金屬矽的含量越高,該反應溫度越趨向150˚C。The preparation method of claim 6, wherein the higher the content of the metallic silicon, the closer the reaction temperature is to 150°C. 如請求項1所述的製備方法,其中,在步驟(c)中,反應時間大於或等於2小時。The preparation method as described in claim 1, wherein, in step (c), the reaction time is greater than or equal to 2 hours.
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