TWI890352B - Led pixel and method of fabricating the same - Google Patents

Abstract

Described herein are devices and methods for creating micro-LED pixels including a backplane, at least three micro-LEDs disposed on the backplane, and subpixel isolation (SI) structures disposed on the backplane and between the micro¬LEDs, the SI structures defining wells of at least three subpixels. One or more of the wells has at least one of: a micro-LED gap, a backplane gap, or an SI structure indentation. Optionally, an isolation film is disposed on the backplane where the well may further include an isolation film indentation. The device further includes a sealant disposed in at least of one the gaps or the indentations and a color conversion material is disposed in the wells.

Description

LED pixel and manufacturing method thereof

Embodiments of the present disclosure generally relate to LED pixels and methods of manufacturing LED pixels.

Light-emitting diode (LED) panels use an array of LEDs, where individual LEDs provide individually controllable pixel elements. Such LED panels can be used in computers, touchscreen devices, personal digital assistants (PDAs), cellular phones, television monitors, and the like. LED panels using micron-sized LEDs based on III-V semiconductor technology (also known as micro-LEDs) offer several advantages over organic light-emitting diodes (OLEDs), such as higher energy efficiency, brightness, and lifetime, as well as fewer material layers in the display stack, which simplifies manufacturing. However, the manufacturing of micro-LED panels presents challenges.

Within a micro-LED pixel, isolation structures are formed on the backplane to separate each micro-LED pixel. One function of these isolation structures is to retain the liquid color-conversion material above each micro-LED. Leakage of the color-conversion material can lead to reduced pixel performance. Therefore, there is a need for improved micro-LED pixels and methods for forming micro-LED pixels.

Embodiments of the present disclosure generally relate to LED pixels and methods of manufacturing LED pixels.

In one embodiment, a device is disclosed. The device includes a backplane, at least three micro-LEDs disposed on the backplane, and a subpixel isolation (SI) structure disposed on the backplane and between the micro-LEDs. The SI structures define wells for at least three sub-pixels. One or more of the wells include at least one of: a backplane gap between the SI structure and the backplane, a micro-LED gap between the SI structure and the micro-LEDs, or an SI structure recess within the SI structure. The device further includes an encapsulant disposed within at least one of the backplane gap, the micro-LED gap, or the SI structure recess within the one or more wells, and a color conversion material disposed within the wells.

In one embodiment, a device is disclosed. The device includes a backplane, at least three micro-LEDs disposed on the backplane, an isolation film disposed on the backplane, and a sub-pixel isolation (SI) structure disposed on the isolation film and between the micro-LEDs, the SI structures defining wells for at least three sub-pixels. One or more of the wells have at least one of the following: a micro-LED gap between the SI structure and the micro-LEDs, an SI structure recess in the SI structure, or an isolation film recess in the isolation film. The device further includes an encapsulant disposed in at least one of the micro-LED gap, the SI structure recess, or the isolation film recess in the one or more wells, and a color conversion material disposed in the wells.

In another embodiment, a method is disclosed. The method includes depositing an encapsulant onto a device via a spin-on process. The device includes a backplane, at least three micro-LEDs disposed on the backplane, and sub-pixel isolation (SI) structures disposed on the backplane and between the micro-LEDs, the SI structures defining wells for the at least three sub-pixels. One or more of the wells have at least one of the following: a backplane gap between the SI structure and the backplane, a micro-LED gap between the SI structure and the micro-LEDs, or an SI structure recess in at least one of the SI structures. The encapsulant is deposited into at least one of the backplane gap, the micro-LED gap, or the SI structure recess. The method further includes evaporating the sealant and curing the sealant such that the sealant is disposed in at least one of a backplane gap, a micro-LED gap, or an SI structure recess of the one or more wells.

100: Pixels

100a: First sub-pixel isolation structure layout

100b: Second sub-pixel isolation structure layout

102: Back panel

104: Micro LED

104a: Micro LED

104b: Micro LED

104c: Micro LED

104d: Micro LED

108:Substrate

110:SI structure

112: Sub-pixel

112a: First subpixel

112b: Second subpixel

112c: Third subpixel

112d: Fourth subpixel

113: Trap

114: Color Conversion Material

114a: Red Conversion Material

114b: Blue conversion material

114c: Green Conversion Material

120: Isolation film

122: Packaging layer

126: Passivation layer

128: Micro lens

130: Sealant

132: Micro LED Gap

134: SI structural depression

136: Back panel gap

138: Depression of the isolation membrane

200:Method

210: Operation

220: Operation

230: Operation

240: Operation

To provide a more detailed understanding of the aforementioned features of the present disclosure, the present disclosure, briefly summarized above, will be described in more detail with reference to the accompanying embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of the present disclosure and are not to be considered limiting of its scope, as the present disclosure may admit to other equally effective embodiments.

FIG1A is a cross-sectional view of a pixel having a first sub-pixel isolation structure arrangement according to an embodiment.

FIG1B is a cross-sectional view of a pixel having a second sub-pixel isolation structure arrangement according to an embodiment.

Figure 2 is a flow chart of a method for manufacturing pixels according to an embodiment.

Figures 3A to 3H are schematic cross-sectional views of a substrate during a method according to an embodiment.

Embodiments of the present disclosure generally relate to LED pixels and methods of manufacturing LED pixels.

Micro-LEDs are converted to different colors by color conversion materials. The color conversion material is often a liquid that is inkjet-printed into a well above each micro-LED. Each well is composed of an isolation structure, a backplane, and a micro-LED. Due to the liquid nature of the color conversion material, leakage can cause color emission crosstalk. Color emission crosstalk can result in a reduction in the displayed color gamut, reduced color contrast, and reduced pixel uniformity. Leakage can also occur under the pixel isolation structure. This form of leakage can result in insufficient color conversion material within the pixel well. Without sufficient color conversion material, photon absorption can be low, resulting in a reduced color gamut in the final product. To prevent color emission crosstalk and other display issues during normal operation, the gaps and recesses within each well within the pixel, which are smaller than a few hundred nanometers, must be filled. Therefore, a method for sealing the micro-LED wells is needed.

FIG1A is a cross-sectional view of a pixel 100 having a first subpixel isolation structure arrangement 100a. FIG1B is a cross-sectional view of a pixel 100 having a second subpixel isolation structure arrangement 100b. Pixel 100 includes at least three micro-LEDs 104 disposed on a backplane 102. The backplane is disposed on a substrate 108. Substrate 108 can be made of a transparent material. In one embodiment, substrate 108 can be glass.

The micro-LEDs 104 are integrated with the backplane circuitry so that each micro-LED 104 can be individually addressed. For example, the backplane 102 circuitry may include a thin film transistor (TFT) active matrix array to drive the micro-LEDs 104. The TFT active matrix array has a thin film transistor and storage capacitor (not shown) for each micro-LED, row and column address lines, and row and column drivers. Alternatively, the micro-LEDs 104 can be driven by a passive matrix within the backplane 102 circuitry. The backplane 102 can be fabricated using a conventional complementary metal-oxide silicon (CMOS) process.

In a first subpixel isolation structure arrangement 100a, as shown in FIG1A , a subpixel isolation (SI) structure 110 is disposed on a backplane. As shown in FIG1B , a second subpixel isolation structure arrangement 100b includes an isolation film 120. The isolation film 120 surrounds the micro-LEDs 104. In the second subpixel isolation structure arrangement 100b, the SI structures 110 are disposed on the isolation film 120. Adjacent SI structures 110 define corresponding wells 113 for at least three subpixels 112. The subpixels 112 include a first subpixel 112a having a red-converting material 114a disposed in a well 113 of the first subpixel 112a; a second subpixel 112b having a blue-converting material 114b disposed in the well 113 of the second subpixel 112b; and a third subpixel 112c having a green-converting material 114c disposed in the well 113 of the third subpixel 112c. When the micro-LED 104a of the first subpixel 112a is turned on, the red-converting material 114a converts light emitted from the micro-LED 104a into red light. When the micro-LED 104b of the second subpixel 112b is turned on, the blue-converting material 114b converts light emitted from the micro-LED 104b into blue light. In one embodiment, the pixel 100 includes a fourth subpixel 112d. As shown in Figures 1A and 1B, fourth subpixel 112d does not include color-conversion material 114; that is, fourth subpixel 112d lacks a color-conversion layer. In some embodiments, as shown in Figures 1A and 1B, fourth subpixel 112d includes a sacrificial material. In other embodiments, at least three subpixels 112 include the same color-conversion material 114. Fourth subpixel 112d may then be filled with color-conversion material 114. In some embodiments, color-conversion material 114 may be quantum dots. Quantum dots may be sized to produce wavelengths corresponding to different colors. In one embodiment, red-conversion material 114a may have quantum dots of approximately 6 nm in size. Blue-conversion material 114b may have quantum dots of approximately 2 nm in size. Green-conversion material 114c may have quantum dots of approximately 4 nm in size. In other embodiments, the color conversion material 114 may be a nanostructure, a photoluminescent material, or an organic substance.

The SI structure 110 can be made of a photoresist material, such as a negative photoresist material or an epoxy-based resist. An SI structure recess 134 within the SI structure 110 prevents sealing between the SI structure 110 and the micro-LEDs 104. In the first sub-pixel isolation structure arrangement 100a, as shown in FIG. 1A , the SI structure recess 134 can be formed anywhere on the SI structure 110. A backplane gap 136 can be formed between the SI structure 110 and the backplane 102. A micro-LED gap 132 can be formed between the micro-LEDs 104 and the SI structure 110.

In the second sub-pixel isolation structure arrangement 100b, as shown in FIG. 1B , the SI structure recess 134 can be formed anywhere on the SI structure 110. In some embodiments, the SI structure recess 134 can be formed between the SI structure 110 and the isolation film 120. The isolation film recess 138 can be formed anywhere on the isolation film 120. The micro-LED gap 132 can be formed between the micro-LED 104 and the isolation film 120.

In the first subpixel isolation structure arrangement 100a, as shown in FIG. 1A , a sealant 130 is disposed within each well 113. The sealant 130 forms a seal within each well 113 between the isolation structure, the backplane 102, and the micro-LEDs 104. The sealant 130 forms a seal by filling the SI structure recess 134, the backplane gap 136, and/or the micro-LED gap 132. In some embodiments, the optical density (OD) of the sealant 130 is approximately 0 ODU to approximately 0.02 ODU. The OD of the sealant 130 allows light to be emitted from the pixel 100 at substantially the same speed and wavelength as light emitted from the pixel 100 without the sealant 130.

In the second sub-pixel isolation structure arrangement 100b, as shown in FIG. 1B , a sealant 130 is disposed within each well 113. The sealant 130 forms a seal within each well 113 between the SI structure 110, the isolation film 120, the backplane 102, and the micro-LEDs 104. The sealant 130 forms a seal by filling the SI structure recess 134, the isolation film recess 138, or the micro-LED gap 132. In some embodiments, the optical density (OD) of the sealant 130 is approximately 0 ODU to approximately 0.02 ODU. The OD of the sealant 130 allows light to be emitted from the pixel 100 at substantially the same speed and wavelength as light emitted from the pixel 100 without the sealant 130. In one embodiment, the isolation film 120 includes a polymer-based adhesive, an epoxy-based adhesive, an acrylic adhesive, or a combination thereof. In certain embodiments, the epoxy-based adhesive is a two-part or one-part system. The two-part system includes an epoxy resin and a hardener. The epoxy resin and hardener are mixed. The one-part system includes an off-the-shelf epoxy-based adhesive.

In one embodiment, sealant 130 includes an epoxy resin, an acrylic acid, and a surfactant. In some embodiments, sealant 130 can be an acrylic-based multifunctional crosslinker, such as hexanediol diacrylate (HDDA), 1,4-butanediol dimethacrylate, diurethane dimethacrylate (DUDMA), 1,4-phenylene diacrylate, polyethylene glycol dimethacrylate, DEAA (diethylacrylamide), trimethylolpropane triacrylate (TMPTA), dipentaerythritol pentaacrylate (a mixture of tetraacrylates, pentaacrylates, and hexaacrylates), or any combination thereof. In other embodiments, the sealant can be epoxy-based or based on other curing chemistries. In one embodiment, the sealant 130 includes hexanediol diacrylate (HDDA), trihydroxymethylpropane triacrylate (TMPTA), ethyl (2,4,6-trimethylbenzyl)-phenylphosphinate (TPO-L), and a surfactant.

An encapsulation layer 122 is disposed over the SI structure 110 and the sub-pixels 112. As shown in FIG1A and FIG1B , the first sub-pixel isolation structure arrangement 100a and the second sub-pixel isolation structure arrangement 100b include a microlens 128 disposed on the encapsulation layer 122 and over each well 113 of the sub-pixel 112. A passivation layer 126 is disposed over the microlens 128. The microlens 128 can be made of a resist material, such as a photoresist material that blocks ultraviolet (UV) light. In some embodiments (not shown), the pixel 100 can be structured without the microlens 128.

FIG. 2 is a flow chart of a method 200 for manufacturing pixel 100. According to an embodiment, method 200 includes applying a sealant 130 within well 113. FIG. 3A through FIG. 3E are schematic cross-sectional views of pixel 100 having a second subpixel isolation structure arrangement 100 b during method 200 according to an embodiment. FIG. 3F is a schematic cross-sectional view of pixel 100 having a first subpixel isolation structure arrangement 100 a during method 200 according to an embodiment.

The method 200 described herein is applicable to both the first sub-pixel isolation structure arrangement 100a and the second sub-pixel isolation structure arrangement 100b because the isolation film 120 is optional. FIG3F is a schematic cross-sectional view of the pixel 100 after the method 200 for the first sub-pixel isolation structure arrangement 100a is completed.

FIG3A is a schematic cross-sectional view of substrate 108 prior to operation 210. FIG3A depicts backplane 102 of second subpixel isolation structure arrangement 100b. Substrate 108 includes backplane 102, micro-LEDs 104, isolation film 120, SI structure 110, isolation film recess 138, SI structure recess 134, micro-LED gap 132, and well 113. As shown in FIG3A, SI structure recess 134 is an example of a recess that occurs when delamination occurs between SI structure 110 and isolation film 120. Delamination between SI structure 110 and isolation film 120 causes SI structure recess 134 to extend across SI structure 110, where SI structure 110 contacts isolation film 120. In other embodiments, the SI structure recess 134 can be located anywhere on the SI structure 110, and the SI structure recess 134 can partially extend through the SI structure 110. The isolation film 120 blocks UV light to enhance the color gamut. The isolation film 120 securely holds the micro-LEDs 104 to improve micro-LED mass transfer yield.

At operation 210 , sealant 130 is deposited over pixel 100 . Sealant 130 is deposited as a liquid during operation 210 . As a liquid, sealant 130 is able to diffuse within well 113 and fill micro-LED gap 132 , isolation film recess 138 , and SI structure recess 134 .

As shown in FIG. 3B , in one embodiment, sealant 130 is deposited via a spin-on process. Sealant 130 is deposited on SI structure 110 and micro-LEDs 104. In one embodiment, sealant 130 can be deposited onto substrate 108 while it is stationary or spinning. After depositing sealant 130, substrate 108 is subsequently spun at a rate of approximately 500 rpm and approximately 3000 rpm. As substrate 108 spins, sealant 130 is dispensed into each well 113. Within each well 113, sealant 130 fills SI structure recess 134, isolation film recess 138, or micro-LED gap 132.

In some embodiments, when depositing encapsulant 130 via a spin-on process, the deposition environment can be at ambient temperature. Encapsulant 130 can be deposited in an inert environment. Encapsulant can be deposited in a yellow light environment. In some embodiments, the spin-on process can be performed for a set time period. In some embodiments, the set time period can be, for example, 30 seconds. In other embodiments, the spin-on process can be performed until the thickness of encapsulant 130 over micro-LEDs 104 is between approximately 2 μm and approximately 3 μm.

As shown in FIG. 3C , in another embodiment, sealant 130 is deposited via an inkjet printing process. Sealant 130 can be deposited between SI structures 110 within each well 113, on backplane 102, isolation film 120, and micro-LEDs 104. When sealant 130 is deposited via inkjet printing, sealant 130 is deposited only within wells 113 and not on top of SI structures 110. Within each well 113, sealant 130 is deposited into SI structure recesses 134, isolation film recesses 138, or micro-LED gaps 132.

In some embodiments, when the sealant 130 is deposited via an inkjet printing process, the deposition environment can be at ambient temperature. In certain embodiments, the deposition environment can be a temperature that is about 5°C higher than the ambient temperature or about 5°C lower than the ambient temperature. The sealant 130 can be deposited in an inert environment. In some embodiments, the waveform and voltage can be modified based on the material of the sealant 130 or the color conversion material 114. The sealant 130 can be selected based on its surface tension and the wetting conditions of the well surface. The viscosity of the sealant 130 is measured in centipoise and is about 5 cp to about 20 cp during inkjet printing. More precisely, the viscosity of the sealant 130 is about 5 cp to about 15 cp. In some embodiments, the inkjet printing process can be performed for a set time period. For example, in some embodiments, the set time period can be between approximately 10 seconds and approximately 20 seconds. In other embodiments, the inkjet printing process can be performed until the thickness of the encapsulant 130 above the micro-LEDs 104 is between approximately 2 μm and approximately 3 μm. In some embodiments, an additive can be added to the encapsulant 130 to reduce the viscosity of the encapsulant 130 for inkjet printing. In some embodiments, the additive can be a low-viscosity solvent. In some embodiments, the additive can be toluene, xylene, propylene glycol methyl ether acetate, 1,4-dioxane, dimethylformamide, or any combination thereof.

At operation 220, an evaporation process is performed. As shown in FIG. 3D , the encapsulant 130 above the micro-LEDs 104 is removed by evaporation, while remaining within the isolation film recess 138, the SI structure recess 134, and the micro-LED gap 132. The thickness of the encapsulant 130 above the micro-LEDs 104 and on the sides of the SI structure 110 may decrease during the evaporation process. The evaporation process may be performed for between approximately 1 minute and approximately 10 minutes. In some embodiments, the duration of the evaporation process may vary based on the thickness of the encapsulant deposited during operation 210. In other embodiments, the evaporation process can be performed until the encapsulant 130 above the center of the micro-LED 104 is removed or the thickness of the encapsulant 130 at the center of the micro-LED is between about 0 μm and about 5 μm. Or, more precisely, between about 0 μm and about 1.5 μm. Or, more precisely, between 0 μm and 1 μm. Or, more precisely, between about 0 μm and about 0.5 μm. The evaporation process opens a well 113 for the color conversion material 114.

The evaporation process can be performed at ambient temperature. In some embodiments, a higher temperature can be used to accelerate the evaporation process. During evaporation, the pixel 100 can be maintained in an inert environment. An inert chemical, such as nitrogen, can be used. In some embodiments, an inert cross-flow can be utilized to accelerate evaporation.

In operation 230 , sealant 130 is cured. FIG. 3E is a cross-sectional view of pixel 100 having second subpixel isolation structure arrangement 100 b after curing. The curing process of operation 230 hardens sealant 130 . Curing sealant 130 creates leak-proof wells 113 . Furthermore, curing sealant 130 prevents contamination of the color conversion material by sealant 130 during deposition of the color conversion material. This can reduce or eliminate color emission crosstalk, resulting in improved display color gamut, color contrast, and color uniformity.

FIG3F is a cross-sectional view of pixel 100 with first subpixel isolation structure arrangement 100a after curing. Sealant 130 is deposited into backplane gap 136. The curing process of operation 230 hardens sealant 130. Curing sealant 130 creates leak-proof wells 113. Furthermore, curing sealant 130 prevents contamination of the color-converting material by sealant 130 during deposition. This can reduce or eliminate color emission crosstalk, resulting in improved display color gamut, color contrast, and color uniformity.

Curing can be performed via UV curing. In one embodiment, UV curing is performed via top-down curing. In embodiments employing a top-down curing process, UV curing can utilize a flood UV source positioned above the pixel 100. In another embodiment, UV curing is performed via bottom-up curing. In embodiments employing a bottom-up curing process, UV curing can be accomplished by opening the micro-LEDs 104 within each well 113. Bottom-up curing can be utilized to more efficiently reach the sealant 130 within the SI structure recess 134, the isolation film recess 138, the micro-LED gap 132, and the backplane gap 136. During curing, the pixel 100 can be maintained in an inert environment. An inert chemical, such as nitrogen, can be used. In some embodiments, the oxygen content in the environment can be maintained at less than 30 ppm.

At operation 240, color conversion material 114 is deposited into well 113, as shown in Figures 3G and 3H. Figure 3G is a cross-sectional view of pixel 100 having first subpixel isolation structure arrangement 100a after curing. Figure 3H is a cross-sectional view of pixel 100 having second subpixel isolation structure arrangement 100b after curing. As shown in Figures 3G and 3H, red color conversion material 114a is deposited into well 113. Color conversion material 114 is then cured. Operation 240 is repeated until color conversion material 114 is deposited into well 113 of second subpixel 112b and well 113 of third subpixel 112c. For example, blue-converting material 114b can be deposited and cured in well 113 of second subpixel 112b, and green-converting material 114c can be deposited and cured in well 113 of third subpixel 112c. Color-converting material 114 is cured by turning on the micro-LEDs or by exposing them to UV light. An encapsulation layer 122 is then positioned over the SI structure 110 and the top surface of subpixels 112. In some embodiments, a microlens 128 can be positioned over encapsulation layer 122 and over each well. In other embodiments, a passivation layer 126 can be positioned over microlenses 128. The pixel 100 may undergo further processing to form the pixel 100 shown in FIG. 1A or FIG. 1B to include an encapsulation layer 122, a microlens 128, and a passivation layer 126.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the appended patent claims.

100: Pixel 100a: First sub-pixel isolation structure layout 102: Backplane 104: Micro-LED 104a: Micro-LED 104b: Micro-LED 104c: Micro-LED 104d: Micro-LED 108: Substrate 110: SI structure 112: Sub-pixels 112a: First sub-pixel 112b: Second sub-pixel 112c: Third sub-pixel 112d: Fourth sub-pixel 113: Well 114: Color conversion material 114a: Red conversion material 114b: Blue conversion material 114c: Green conversion material 122: Encapsulation layer 126: Passivation layer 128: Micro-lens 130: Sealant 132: Micro-LED gap 134: SI structure depression

Claims (20)

An LED pixel comprises: a backplane; at least three micro-LEDs disposed on the backplane; subpixel isolation (SI) structures disposed on the backplane and between the micro-LEDs, the SI structures defining wells for at least three sub-pixels, wherein one or more of the wells have at least one of the following: a backplane gap between the SI structures and the backplane; a micro-LED gap between the SI structures and the micro-LEDs; or an SI structure recess within at least one of the SI structures; an encapsulant disposed in at least one of the backplane gap, the micro-LED gap, or the SI structure recess within one or more of the wells; and a color conversion material disposed within the wells. The LED pixel of claim 1 further comprises: an encapsulation layer disposed over the SI structures and the sub-pixels; a microlens disposed over the encapsulation layer and over each of the wells of the sub-pixels; and a passivation layer disposed over the microlenses. The LED pixel of claim 1, wherein the encapsulant has a thickness of about 0 μm to about 5 μm. The LED pixel of claim 1, wherein at least three of the sub-pixels have a different color conversion material. The LED pixel of claim 1, wherein the encapsulant has an optical density of 0 ODU. The LED pixel of claim 1, wherein the sealant comprises an epoxy resin, an acrylic, and a surfactant. An LED pixel comprises: a backplane; at least three micro-LEDs disposed on the backplane; an isolation film disposed on the backplane; a sub-pixel isolation (SI) structure disposed on the isolation film and between the micro-LEDs, the SI structures defining wells for at least three sub-pixels, wherein one or more of the wells has at least one of the following: a micro-LED gap between the SI structures and the micro-LEDs; an SI structure recess in at least one of the SI structures; or an isolation film recess in the isolation film; an encapsulant disposed in at least one of the micro-LED gap, the SI structure recess, or the isolation film recess in one or more wells; and a color conversion material disposed in the wells. The LED pixel of claim 7 further comprises: an encapsulation layer disposed over the SI structures and the sub-pixels; a microlens disposed over the encapsulation layer and over each of the wells of the sub-pixels; and a passivation layer disposed over the microlenses. The LED pixel of claim 7, wherein the isolation film comprises a polymer-based glue. The LED pixel of claim 7, wherein a thickness of the encapsulant is between about 0 μm and about 5 μm. An LED pixel as described in claim 7, wherein at least three of the sub-pixels have a different color conversion material. The LED pixel of claim 7, wherein the encapsulant has an optical density of 0 ODU. The LED pixel of claim 7, wherein the encapsulant comprises an epoxy resin, an acrylic, and a surfactant. A method for manufacturing an LED pixel comprises the following steps: Depositing an encapsulant onto a device via a spin-on process, the device comprising: A backplane; At least three micro-LEDs disposed on the backplane; Subpixel isolation (SI) structures disposed on the backplane and between the micro-LEDs, the SI structures defining wells for at least three sub-pixels, wherein one or more of the wells have at least one of the following: A backplane gap between the SI structure and the backplane; A micro-LED gap between the SI structures and the micro-LEDs; or An SI structure recess in at least one of the SI structures; Wherein, the encapsulant is deposited into the backplane gap, the micro-LED gap, or the SI structure recess; Evaporating the encapsulant; and The sealant is cured so that the sealant is disposed in at least one of the backplane gap, the micro-LED gap, or the SI structure recess of one or more wells. The method of claim 14, wherein evaporating the encapsulant is performed until the encapsulant has completely evaporated from a center of at least one of the three micro-LEDs. The method of claim 14, wherein the sealant comprises an epoxy, an acrylic, and a surfactant. The method of claim 14, wherein the curing is performed via an ultraviolet (UV) curing process, and the curing is performed via a flood UV source or by turning on the micro-LEDs. The method of claim 14, wherein the curing is performed until the sealant is cured. The method of claim 14, wherein the spin-on process further comprises the steps of: depositing the sealant; and spinning the backing plate after depositing the sealant. The method of claim 14, further comprising the steps of: depositing a color-converting material into at least one well of a subpixel; and curing the color-converting material.