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TWI890056B - Decompression drying device - Google Patents

Decompression drying device

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Publication number
TWI890056B
TWI890056B TW112117096A TW112117096A TWI890056B TW I890056 B TWI890056 B TW I890056B TW 112117096 A TW112117096 A TW 112117096A TW 112117096 A TW112117096 A TW 112117096A TW I890056 B TWI890056 B TW I890056B
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TW
Taiwan
Prior art keywords
substrate
support
support pins
area
chamber
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TW112117096A
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Chinese (zh)
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TW202413869A (en
Inventor
北村翔也
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日商斯庫林集團股份有限公司
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Publication of TW202413869A publication Critical patent/TW202413869A/en
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Publication of TWI890056B publication Critical patent/TWI890056B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00Drying solid materials or objects by processes not involving the application of heat
    • F26B5/04Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
    • F26B21/37
    • F26B21/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Solid Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明提供一種抑制對塗布膜產生乾燥不均的技術。減壓乾燥裝置(1)包括腔室(10)、多個支撐銷(22)以及排氣部(30)。腔室(10)收容基板(9)。多個支撐銷(22)在腔室(10)內從下方支撐基板(9)。排氣部(30)將腔室(10)內的氣體排出。多個支撐銷(22)包含一個以上的第一支撐銷(22a)、以及比第一支撐銷(22a)細的一個以上的第二支撐銷(22b)。第一支撐銷(22a)中的至少一個從下方支撐基板(9)中的周緣區域。第二支撐銷(22b)中的至少一個從下方支撐基板(9)的比周緣區域更靠內側的內側區域中的形成有塗布膜的區域。The present invention provides a technology for suppressing uneven drying of a coating film. A pressure-reducing drying device (1) includes a chamber (10), a plurality of support pins (22), and an exhaust portion (30). The chamber (10) accommodates a substrate (9). The plurality of support pins (22) support the substrate (9) from below in the chamber (10). The exhaust portion (30) exhausts gas in the chamber (10). The plurality of support pins (22) include one or more first support pins (22a) and one or more second support pins (22b) thinner than the first support pins (22a). At least one of the first support pins (22a) supports a peripheral area of the substrate (9) from below. At least one of the second support pins (22b) supports from below an area of the substrate (9) where a coating film is formed in an inner area that is further inward than a peripheral area.

Description

減壓乾燥裝置Pressure reduction drying device

本發明是有關於一種減壓乾燥裝置。The present invention relates to a pressure reduction drying device.

例如,已知有對塗布於各種基板的光致抗蝕劑等的塗布膜進行減壓乾燥的減壓乾燥裝置。對於各種基板,例如可應用用於形成各種元件的玻璃基板、陶瓷基板、半導體晶片、電子元件基板或印刷用的印刷板等各種基板。對於各種元件,例如可應用半導體裝置、顯示面板、太陽電池面板、磁碟或光碟等。對於顯示面板,例如可應用液晶顯示面板、有機電致發光(Electroluminescence,EL)顯示面板、電漿顯示面板、或場致發射顯示器等。For example, known pressure-reduction drying devices are used to reduce the pressure of coatings such as photoresists applied to various substrates. Examples of these substrates include glass substrates, ceramic substrates, semiconductor chips, electronic component substrates, and printed circuit boards used to form various components. Examples of these components include semiconductor devices, display panels, solar cell panels, magnetic disks, and optical disks. Examples of these display panels include liquid crystal display panels, organic electroluminescence (EL) display panels, plasma display panels, and field emission displays.

在使用減壓乾燥裝置對塗布膜進行乾燥時,例如,在腔室內多個銷支撐基板的狀態下,經由腔室的底部的排氣口利用真空泵從腔室內進行排氣。然後,例如,當真空度達到規定值時,停止來自腔室內的排氣,通過向腔室內供給氣體而使腔室內恢復為大氣壓。對於氣體,例如可應用氮氣等惰性氣體或空氣等。When drying a coated film using a reduced-pressure drying system, for example, with the substrate supported by multiple pins within a chamber, a vacuum pump is used to evacuate the chamber through an exhaust port at the bottom of the chamber. Then, when the vacuum level reaches a specified value, for example, exhaust from the chamber is stopped and gas is supplied to the chamber to return it to atmospheric pressure. The gas used can be, for example, an inert gas such as nitrogen or air.

且說,在減壓乾燥裝置中,例如,在形成於基板的上表面的塗布膜中,若乾燥速度根據場所而不同,則可能產生與所述乾燥速度的不同相應的乾燥不均(也稱為乾燥不均)。乾燥不均例如會產生乾燥後的塗布膜的厚度偏差等。For example, in a reduced-pressure drying apparatus, if the drying rate of a coating formed on the upper surface of a substrate varies depending on the location, uneven drying (also known as drying unevenness) may occur in response to the varying drying rates. Drying unevenness can result in variations in the thickness of the dried coating, for example.

例如,在基板上,由於多個銷的接觸,在由多個銷支撐的部分與其周邊的部分之間可能產生溫度差。由此,例如,根據由多個銷引起的溫度差,塗布膜的乾燥速度可能產生差異。其結果,例如,在塗布膜上可能產生與多個銷的配置相應的乾燥不均。此處,例如,在塗布膜的減壓乾燥時,雖然基板的溫度因溶媒等從塗布膜汽化時產生的汽化熱而下降,但是無論是在多個銷的熱容量大的情況還是在多個銷連結於熱容量大的腔室等的情況下,多個銷的溫度均難以變化。因此,例如,在基板上可能產生與多個銷的配置相應的溫度差。For example, due to the contact of multiple pins on a substrate, a temperature difference may occur between the portion supported by the pins and the surrounding portion. Consequently, for example, the drying rate of the coating film may vary depending on the temperature difference caused by the pins. As a result, for example, uneven drying may occur across the coating film, corresponding to the arrangement of the pins. For example, during reduced-pressure drying of a coating film, although the substrate temperature drops due to the heat of vaporization generated when solvent, etc., evaporates from the coating film, the temperature of the pins remains relatively stable, regardless of whether the pins have a large heat capacity or are connected to a chamber with a large heat capacity. Therefore, for example, a temperature difference may occur across the substrate, corresponding to the arrangement of the pins.

在專利文獻1中,記載了如下內容:將支撐基板的多個銷設為通過將內部空間內的流體排出而冷卻的空心銷、或者通過向內部空間內供給冷卻水等液體而冷卻的空心銷。 [現有技術文獻] Patent Document 1 describes the following: The plurality of pins supporting the substrate are hollow pins that are cooled by discharging a fluid from an internal space, or by supplying a liquid such as cooling water into the internal space. [Prior Art Document]

[專利文獻] [專利文獻1]日本專利第6579773號公報 [Patent Document] [Patent Document 1] Japanese Patent No. 6579773

[發明所要解決的問題] 然而,在專利文獻1的減壓乾燥裝置中,裝置結構變得複雜,導致裝置價格變高。另外,例如,在向空心銷供給冷卻水的結構中,也可考慮由於冷卻水的洩漏而對腔室內的真空狀態帶來不良影響的情況。 [Problem to be Solved by the Invention] However, the reduced-pressure drying device of Patent Document 1 has a complex structure, resulting in an increased cost. Furthermore, for example, in a structure that supplies cooling water to a hollow pin, there is a concern that leakage of cooling water could adversely affect the vacuum condition within the chamber.

本公開是鑒於所述課題而成,其目的在於提供一種抑制對塗布膜產生乾燥不均的技術。 [解決問題的技術手段] This disclosure was developed in response to the aforementioned issues, and its purpose is to provide a technology for suppressing uneven drying of a coating film. [Technical Solution]

第一形態是一種減壓乾燥裝置,使形成於基板的上表面的塗布膜乾燥,所述減壓乾燥裝置包括:腔室,收容所述基板;多個支撐銷,在所述腔室內從下方支撐所述基板;以及排氣部,將所述腔室內的氣體排出,所述多個支撐銷包含一個以上的第一支撐銷、以及比所述第一支撐銷細的一個以上的第二支撐銷,所述第一支撐銷中的至少一個從下方支撐所述基板中的周緣區域,所述第二支撐銷中的至少一個從下方支撐所述基板的比所述周緣區域更靠內側的內側區域中的形成有所述塗布膜的區域。The first form is a decompression drying device for drying a coating film formed on the upper surface of a substrate, the decompression drying device including: a chamber for accommodating the substrate; a plurality of support pins for supporting the substrate from below in the chamber; and an exhaust portion for exhausting the gas in the chamber, the plurality of support pins including one or more first support pins and one or more second support pins thinner than the first support pins, at least one of the first support pins supporting a peripheral area of the substrate from below, and at least one of the second support pins supporting an area of the substrate on which the coating film is formed, in an inner area that is further inward than the peripheral area, from below.

根據第一形態的減壓乾燥裝置,第二形態中,所述基板的所述內側區域僅由所述第二支撐銷支撐。According to the first aspect of the reduced pressure drying device, in the second aspect, the inner area of the substrate is supported only by the second supporting pins.

根據第一形態的減壓乾燥裝置,第三形態中,所述第一支撐銷中的至少另一個支撐所述基板的所述內側區域中的形成有所述塗布膜的所述區域以外的區域。According to the reduced-pressure drying apparatus of the first aspect, in a third aspect, at least another one of the first supporting pins supports an area of the inner area of the substrate other than the area where the coating film is formed.

根據第一形態至第三形態中任一形態的減壓乾燥裝置,第四形態中,所述第一支撐銷與所述基板的接觸面積比所述第二支撐銷與所述基板的接觸面積大。According to the reduced pressure drying apparatus of any one of the first to third aspects, in a fourth aspect, a contact area between the first support pin and the substrate is larger than a contact area between the second support pin and the substrate.

根據第一形態至第四形態中任一形態的減壓乾燥裝置,第五形態中,所述第一支撐銷的間距比所述第二支撐銷的間距寬。According to the reduced pressure drying device of any one of the first to fourth aspects, in a fifth aspect, a pitch between the first support pins is wider than a pitch between the second support pins.

根據第一形態至第五形態中任一形態的減壓乾燥裝置,第六形態中,所述第二支撐銷的導熱率為0.12 W/m·K以下。According to the reduced pressure drying device of any one of the first to fifth aspects, in a sixth aspect, the thermal conductivity of the second support pin is less than 0.12 W/m·K.

根據第一形態至第六形態中任一形態的減壓乾燥裝置,第七形態中,所述第二支撐銷由多孔質樹脂形成。 [發明的效果] According to the reduced-pressure drying device of any one of the first to sixth aspects, in a seventh aspect, the second support pin is formed of a porous resin. [Effects of the Invention]

通過第一形態,第二支撐銷中的至少一個從下方支撐基板的內側區域中的形成有塗布膜的區域(以下,稱為第一區域)。由於第二支撐銷細,因此在腔室的減壓下在第二支撐銷的周圍產生的上升氣流的產生量小。因此,即使氣體通過所述上升氣流沿著第二支撐銷上升並局部地供給至基板的第一區域的下表面,也難以導致第一區域中的溫度分佈的偏差。因此,可抑制對第一區域上的塗布膜的乾燥不均。In the first configuration, at least one of the second support pins supports the area of the substrate's inner side where the coating film is formed (hereinafter referred to as the first area) from below. Because the second support pins are thin, the amount of upward airflow generated around the second support pins when the chamber is depressurized is small. Therefore, even if gas rises along the second support pins via this upward airflow and is locally supplied to the lower surface of the first area of the substrate, it is unlikely to cause temperature variations in the first area. Consequently, uneven drying of the coating film in the first area can be suppressed.

通過第二形態,在內側區域中,即使形成有塗布膜的區域的個數、形狀及位置變更,也可利用第二支撐銷支撐所述區域。According to the second aspect, even if the number, shape, and position of the areas where the coating film is formed in the inner region are changed, the areas can be supported by the second supporting pins.

通過第三形態,可更牢固地支撐基板。The third form can support the substrate more firmly.

通過第四形態,可抑制基板相對於第一支撐銷的水平方向上的偏移量。另一方面,可減少第二支撐銷與基板之間的熱的移動量,可進一步抑制對塗布膜的乾燥不均。The fourth aspect reduces the amount of horizontal displacement of the substrate relative to the first support pin. Furthermore, it reduces the amount of heat transfer between the second support pin and the substrate, further minimizing uneven drying of the coating film.

通過第五形態,可減少第一支撐銷的根數。因此,可減少減壓乾燥裝置的製造成本。另外,可減少支撐銷的更換作業的工時。The fifth aspect reduces the number of first support pins, thereby reducing the manufacturing cost of the pressure-reducing dryer. Furthermore, the man-hours required to replace the support pins can be reduced.

通過第六形態及第七形態,可減少第二支撐銷與基板之間的熱的移動量,可進一步抑制對塗布膜的乾燥不均。According to the sixth and seventh aspects, the amount of heat transfer between the second support pin and the substrate can be reduced, and the uneven drying of the coating film can be further suppressed.

以下,參照附圖對本公開的一實施方式及各種變形例進行說明。在附圖中,對具有同樣的結構及功能的部分標注相同的符號,在下述說明中省略重複說明。附圖只是示意性地示出,各圖中的各種結構的尺寸及位置關係等並不準確地圖示。另外,在本說明書中,下方向為重力方向,上方向為與重力方向相反的方向。The following describes one embodiment of the present disclosure and various variations with reference to the accompanying drawings. In the drawings, components with identical structures and functions are designated with the same reference numerals, and duplicate descriptions are omitted in the following description. The drawings are schematic only, and the dimensions and positional relationships of the various structures in the drawings are not intended to be exact. In this specification, the downward direction refers to the direction of gravity, and the upward direction refers to the direction opposite to gravity.

<1.減壓乾燥裝置的結構> 圖1是示意性地表示一實施方式的減壓乾燥裝置1的縱剖面的一例的圖。圖2是示意性地表示一實施方式的減壓乾燥裝置1的橫剖面的一例的圖。圖3是示意性地表示一實施方式的減壓乾燥裝置1的縱剖面的一例的圖。圖1的縱剖面與圖3的縱剖面示出了分別從相差約90度的方向觀察時的減壓乾燥裝置1的結構。在圖3中,為了避免附圖的複雜化,為了方便起見,省略了與後述的排氣部30、供氣部60、壓力計70及控制部80相關的結構。減壓乾燥裝置1是使形成於基板9的上表面的塗布膜90(參照圖5)乾燥的裝置。 <1. Structure of the Pressure Reduction Dryer> Figure 1 schematically illustrates an example of a longitudinal cross-section of a pressure reduction dryer 1 according to one embodiment. Figure 2 schematically illustrates an example of a transverse cross-section of the pressure reduction dryer 1 according to one embodiment. Figure 3 schematically illustrates an example of a longitudinal cross-section of the pressure reduction dryer 1 according to one embodiment. The longitudinal cross-sections of Figure 1 and Figure 3 show the structure of the pressure reduction dryer 1 when viewed from directions approximately 90 degrees apart. In Figure 3, to avoid complication, structures related to the exhaust unit 30, air supply unit 60, pressure gauge 70, and control unit 80, described later, are omitted for convenience. The reduced pressure drying device 1 is a device for drying the coating film 90 (see FIG5 ) formed on the upper surface of the substrate 9 .

對於基板9,例如可應用玻璃基板、半導體晶片或陶瓷基板等。基板9例如是具有作為第一主表面的第一面F1(參照圖4及圖5)與作為與所述第一面F1相反的第二主表面的第二面F2(參照圖5)的平板狀的基板。例如,在減壓乾燥裝置1中,基板9的第一面F1設為基板9的上表面,基板9的第二面F2設為基板9的下表面。此處,適宜列舉對基板9應用了矩形的玻璃基板的具體例進行說明。在基板9的第一面F1,例如通過預先塗布包含有機材料及溶媒的處理液,部分地形成有塗布膜90。處理液的塗布例如是通過狹縫塗布機或噴墨裝置等進行。對於處理液,例如可應用包含聚醯亞胺前體與溶媒的液體(也稱為聚醯亞胺(Polyimide,PI)液)或抗蝕劑液等塗布液。對於聚醯亞胺前體,例如可應用聚醯胺(Polyamide)酸(聚醯胺酸(Polyamic acid))等。對於溶媒,例如可應用NMP(N-甲基-2-吡咯烷酮:N-Methyl-2-Pyrrolidone)。另外,例如,在減壓乾燥裝置1應用於有機EL顯示器的製造步驟的情況下,也可採用塗布膜90通過在減壓乾燥裝置1中被乾燥而成為有機EL顯示面板的電洞注入層、電洞輸送層或發光層的實施方式。For example, a glass substrate, a semiconductor wafer, or a ceramic substrate can be used as the substrate 9. The substrate 9 is, for example, a flat plate having a first surface F1 (see Figures 4 and 5 ) serving as a first main surface and a second surface F2 (see Figure 5 ) serving as a second main surface opposite to the first surface F1. For example, in the reduced pressure drying apparatus 1 , the first surface F1 of the substrate 9 is set as the upper surface of the substrate 9, and the second surface F2 of the substrate 9 is set as the lower surface of the substrate 9. Here, a specific example in which a rectangular glass substrate is used as the substrate 9 will be described. A coating film 90 is partially formed on the first surface F1 of the substrate 9, for example, by pre-applying a treatment liquid containing an organic material and a solvent. The treatment liquid is applied, for example, by a slit coater or an inkjet device. The treatment liquid may include, for example, a liquid containing a polyimide precursor and a solvent (also called a polyimide (PI) liquid) or a coating liquid such as an anti-etching agent liquid. For example, the polyimide precursor may include polyamide acid (polyamic acid). For example, NMP (N-methyl-2-pyrrolidone) may be used as the solvent. Furthermore, if the reduced-pressure drying apparatus 1 is used in the manufacturing process of an organic EL display, the coating film 90 may be dried in the reduced-pressure drying apparatus 1 to form a hole injection layer, hole transport layer, or light-emitting layer of the organic EL display panel.

圖4是表示基板9的一例的立體圖。圖5是表示基板9的一部分的縱剖面的一例的圖。如圖4所示,基板9例如具有在俯視時呈縱橫的長度不同的長方形形狀的形態。在基板9排列有多個用來形成元件等的區域(也稱為被形成區域與塗布區域)A1。在圖4的例子中,在俯視時,在基板9,呈兩行兩列的矩陣狀排列有四個矩形形狀的塗布區域A1。但是,塗布區域A1的形狀、數量、配置並不限定於所述例。塗布膜90在利用減壓乾燥裝置1的減壓乾燥步驟之前的塗布步驟中,通過狹縫塗布機或噴墨裝置等,在各塗布區域A1的上表面,按照所期望的模式形成。對於所期望的模式,例如可應用電路的模式。此處,例如,如圖5所示,作為各塗布區域A1的上表面的第一面F1具有被塗布膜90覆蓋的區域(也稱為被覆區域)A3與未被塗布膜90覆蓋的露出的區域(也稱為露出區域)A4。另外,基板9中的塗布區域A1的周圍及相鄰的塗布區域A1之間的區域成為在作為上表面的第一面F1未形成塗布膜90的區域(也稱為非塗布區域)A2。非塗布區域A2也是未被塗布膜90覆蓋的露出的區域(露出區域)A4。Figure 4 is a perspective view of an example of a substrate 9. Figure 5 is a diagram showing an example of a longitudinal cross-section of a portion of substrate 9. As shown in Figure 4, substrate 9 has, for example, a rectangular shape with varying lengths in both the vertical and horizontal directions when viewed from above. Multiple areas A1 for forming components and the like (also referred to as formed areas and coating areas) are arranged on substrate 9. In the example of Figure 4, four rectangular coating areas A1 are arranged in a matrix of two rows and two columns on substrate 9 when viewed from above. However, the shape, number, and arrangement of coating areas A1 are not limited to this example. In a coating step prior to the reduced-pressure drying step in the reduced-pressure drying apparatus 1, the coating film 90 is formed on the upper surface of each coating area A1 using a slit coater or inkjet device, for example. The desired pattern can be, for example, a circuit pattern. For example, as shown in FIG5 , the first surface F1, serving as the upper surface of each coating area A1, includes an area A3 covered by the coating film 90 (also referred to as a covered area) and an exposed area A4 not covered by the coating film 90 (also referred to as an exposed area). Furthermore, the areas surrounding coated areas A1 and between adjacent coated areas A1 on substrate 9 constitute areas (also referred to as non-coated areas) A2 where coating film 90 is not formed on first surface F1, which serves as the upper surface. Non-coated areas A2 also constitute exposed areas (exposed areas) A4 that are not covered by coating film 90.

在圖4的例子中,還示出了基板9中的周緣區域B1及內側區域B2。基板9的周緣區域B1是從基板9的外周部(即側面)9op向內側靠近規定寬度的框狀的區域。規定寬度例如為100 mm左右以下。此處,基板9的周緣區域B1相當於非塗布區域A2的一部分。即,在基板9的周緣區域B1的上表面未形成元件,此處,也未形成塗布膜90。基板9的內側區域B2是基板9中的比周緣區域B1更靠內側的區域。基板9的周緣區域B1與內側區域B2的邊界B3例如具有矩形形狀的形狀。此處,基板9的內側區域B2包含多個塗布區域A1、以及多個塗布區域A1之間的區域(在圖4中,為十字狀的非塗布區域A2)。內側區域B2例如具有在俯視時呈長方形形狀。In the example of FIG. 4 , a peripheral area B1 and an inner area B2 of the substrate 9 are also shown. The peripheral area B1 of the substrate 9 is a frame-shaped area extending inward from the outer periphery (i.e., the side surface) 9op of the substrate 9 to a predetermined width. The predetermined width is, for example, approximately 100 mm or less. Here, the peripheral area B1 of the substrate 9 corresponds to a portion of the non-coated area A2. In other words, no components are formed on the upper surface of the peripheral area B1 of the substrate 9, and the coating film 90 is not formed here. The inner area B2 of the substrate 9 is an area of the substrate 9 that is further inward than the peripheral area B1. The boundary B3 between the peripheral area B1 and the inner area B2 of the substrate 9 has, for example, a rectangular shape. Here, the inner area B2 of the substrate 9 includes a plurality of coating areas A1 and areas between the coating areas A1 (in FIG. 4 , cross-shaped non-coating areas A2). The inner area B2 has, for example, a rectangular shape in a plan view.

<<減壓乾燥裝置的結構的概要>> 首先,對減壓乾燥裝置1的結構進行概述。如圖1及圖2所示,減壓乾燥裝置1例如包括腔室10、支撐部20、以及排氣部30。腔室10為用於收容基板9的部分。支撐部20設置於腔室10內,並以水平姿勢支撐基板9。此處提及的所謂水平姿勢是指基板9的厚度方向沿著上下方向的姿勢。排氣部30將腔室10內的氣體排出至外部,使腔室10內的氣壓下降。由於所述氣壓的下降,塗布膜90的溶劑蒸發而塗布膜90乾燥。 <<Overview of the Structure of the Reduced-Pressure Drying Apparatus>> First, the structure of the reduced-pressure drying apparatus 1 will be briefly described. As shown in Figures 1 and 2, the reduced-pressure drying apparatus 1 includes, for example, a chamber 10, a support unit 20, and an exhaust unit 30. The chamber 10 houses the substrate 9. The support unit 20 is disposed within the chamber 10 and supports the substrate 9 in a horizontal position. The horizontal position here refers to a position in which the thickness of the substrate 9 is oriented vertically. The exhaust unit 30 exhausts the gas within the chamber 10 to the outside, reducing the pressure within the chamber 10. This reduction in pressure evaporates the solvent in the coating film 90, drying the coating film 90.

另外,在圖1及圖2的例子中,減壓乾燥裝置1包括:升降部100、供氣部60、控制部80、底面整流板40、側面整流板50、以及壓力計70。升降部100使支撐部20升降。由此,由支撐部20支撐的基板9也在腔室10內升降。供氣部60向腔室10內供給氣體。由此,可使腔室10內的氣壓恢復為大氣壓。底面整流板40及側面整流板50設置於腔室10內,並對腔室10內的氣流進行調整。壓力計70對腔室10內的氣壓進行測量,並將表示其測量結果的電信號輸出至控制部80。控制部80對所述減壓乾燥裝置1的各種結構進行控制。例如,控制部80基於由壓力計70測量的氣壓來對排氣部30進行控制,而將腔室10內的氣壓調整為目標氣壓。In addition, in the example of Figures 1 and 2, the pressure reduction drying device 1 includes: a lifting part 100, an air supply part 60, a control part 80, a bottom straightening plate 40, a side straightening plate 50, and a pressure gauge 70. The lifting part 100 lifts and lowers the support part 20. As a result, the substrate 9 supported by the support part 20 is also lifted and lowered in the chamber 10. The air supply part 60 supplies gas into the chamber 10. As a result, the air pressure in the chamber 10 can be restored to atmospheric pressure. The bottom straightening plate 40 and the side straightening plate 50 are arranged in the chamber 10 and adjust the airflow in the chamber 10. The pressure gauge 70 measures the air pressure in the chamber 10 and outputs an electrical signal indicating its measurement result to the control part 80. The control unit 80 controls various components of the reduced pressure drying apparatus 1. For example, the control unit 80 controls the exhaust unit 30 based on the air pressure measured by the pressure gauge 70 to adjust the air pressure in the chamber 10 to a target air pressure.

接著,對減壓乾燥裝置1的各結構的詳細的一例進行敘述。Next, an example of the detailed configuration of the reduced-pressure drying apparatus 1 will be described.

<<腔室10>> 腔室10為用於收容基板9的部分。對於腔室10,可應用具有用於收容基板9的內部空間10s的耐壓容器。腔室10例如固定於省略了圖示的裝置框架上。腔室10的形狀例如為扁平的長方體狀。腔室10例如具有大致正方形形狀的底板部11、四個側壁部12、以及大致正方形形狀的頂板部13。四個側壁部12例如在上下方向上將底板部11的四個端邊與頂板部13的四個端邊連接。例如,在四個側壁部12中的一個側壁部12設置有搬入搬出口14與使所述搬入搬出口14開閉的閘門部(也稱為閘閥)15。閘門部15例如連結於或連接於開閉驅動部16。在圖3中,為了避免附圖的複雜化,概念性地示出了開閉驅動部16。對於開閉驅動部16,例如可應用汽缸等驅動機構。此處,例如,通過開閉驅動部16的動作,閘門部15可在將搬入搬出口14關閉的位置(也稱為關閉位置)與將搬入搬出口14打開的位置(也稱為打開位置)之間移動。 <<Chamber 10>> The chamber 10 is a portion for accommodating the substrate 9. A pressure-resistant container having an internal space 10s for accommodating the substrate 9 can be used for the chamber 10. The chamber 10 is fixed to, for example, an apparatus frame (not shown). The chamber 10 has, for example, a flat rectangular parallelepiped shape. The chamber 10 has, for example, a generally square bottom plate 11, four side walls 12, and a generally square top plate 13. The four side walls 12 connect, for example, the four end sides of the bottom plate 11 and the four end sides of the top plate 13 in the vertical direction. For example, one of the four side walls 12 is provided with a loading/unloading port 14 and a gate portion (also called a gate valve) 15 for opening and closing the loading/unloading port 14. The gate portion 15 is connected to or coupled to an opening/closing drive portion 16, for example. In Figure 3, the opening/closing drive portion 16 is shown conceptually to avoid complication. A driving mechanism such as a pneumatic cylinder can be employed as the opening/closing drive portion 16. Here, for example, the operation of the opening/closing drive portion 16 allows the gate portion 15 to move between a position closing the loading/unloading port 14 (also referred to as a closed position) and a position opening the loading/unloading port 14 (also referred to as an open position).

此處,例如,在閘門部15位於關閉位置的狀態下,將腔室10的內部空間10s密閉。例如,在閘門部15位於打開位置的狀態下,可經由搬入搬出口14進行基板9向腔室10的內部空間10s的搬入及基板9從腔室10的內部空間10s的搬出。Here, for example, when the shutter portion 15 is in the closed position, the internal space 10s of the chamber 10 is sealed. For example, when the shutter portion 15 is in the open position, the substrate 9 can be loaded into or unloaded from the internal space 10s of the chamber 10 through the loading/unloading port 14.

<<支撐部20>> 支撐部20為在腔室10內從下方支撐基板9的部分。例如,支撐部20位於腔室10的內部空間10s,且可從下方支撐收容於腔室10的內部空間10s的基板9。支撐部20例如具有多個支撐板21與多個支撐銷22。多個支撐板21例如在水平方向上空開間隔地排列。在各支撐板21的上表面豎立設置有多個支撐銷22。多個支撐板21為成為支撐部20的基座的部分。基板9例如配置於多個支撐板21的上方,多個支撐銷22的上端部與作為基板9的下表面的第二面F2接觸,由此基板9以水平姿勢受到支撐。 <<Supporting Unit 20>> The supporting unit 20 supports the substrate 9 from below within the chamber 10. For example, the supporting unit 20 is located within the interior space 10s of the chamber 10 and can support the substrate 9 housed therein from below. The supporting unit 20 includes, for example, a plurality of supporting plates 21 and a plurality of supporting pins 22. The supporting plates 21 are arranged horizontally at intervals. A plurality of supporting pins 22 are vertically disposed on the top surface of each supporting plate 21. The supporting plates 21 serve as the base of the supporting unit 20. The substrate 9 is placed, for example, above a plurality of support plates 21. The upper ends of the plurality of support pins 22 contact the second surface F2, which is the lower surface of the substrate 9. This supports the substrate 9 in a horizontal position.

多個支撐銷22例如包含一個以上的第一支撐銷22a及一個以上的第二支撐銷22b。換言之,支撐部20包含分別從下方支撐基板9的第一支撐銷22a及第二支撐銷22b。如圖3所示,第一支撐銷22a及第二支撐銷22b具有在上下方向上長的棒狀的形狀,第一支撐銷22a比第二支撐銷22b粗。The plurality of support pins 22 include, for example, one or more first support pins 22a and one or more second support pins 22b. In other words, the support portion 20 includes the first support pins 22a and the second support pins 22b, each supporting the substrate 9 from below. As shown in Figure 3, the first support pins 22a and the second support pins 22b are vertically elongated rods, with the first support pins 22a being thicker than the second support pins 22b.

圖6是表示第一支撐銷22a的外觀的一例的正視圖,圖7是表示第二支撐銷22b的外觀的一例的正視圖。FIG6 is a front view showing an example of the appearance of the first supporting pin 22a, and FIG7 is a front view showing an example of the appearance of the second supporting pin 22b.

在圖6的例子中,第一支撐銷22a豎立設置於第一台座部26a的上表面。即,第一支撐銷22a從第一台座部26a的上表面朝向上方延伸。第一台座部26a形成為比第一支撐銷22a寬。在圖6的例子中,在第一台座部26a的下表面設置有第一外螺紋部27a。第一外螺紋部27a具有從第一台座部26a的下表面向下方延伸的柱狀的形狀,且在其側面形成有螺紋牙。第一支撐銷22a通過第一外螺紋部27a所產生的螺紋作用而安裝於支撐板21的上表面。即,第一外螺紋部27a通過螺紋作用而與形成於支撐板21的上表面的內螺紋部(未圖示)結合,由此第一支撐銷22a安裝於支撐板21的上表面。In the example of Figure 6 , the first support pin 22a is vertically disposed on the upper surface of the first pedestal 26a. That is, the first support pin 22a extends upward from the upper surface of the first pedestal 26a. The first pedestal 26a is formed to be wider than the first support pin 22a. In the example of Figure 6 , a first externally threaded portion 27a is disposed on the lower surface of the first pedestal 26a. The first externally threaded portion 27a has a columnar shape extending downward from the lower surface of the first pedestal 26a and has thread teeth formed on its side surface. The first support pin 22a is attached to the upper surface of the support plate 21 by the threading action generated by the first externally threaded portion 27a. That is, the first external thread portion 27 a is screwed together with an internal thread portion (not shown) formed on the upper surface of the support plate 21 , whereby the first support pin 22 a is attached to the upper surface of the support plate 21 .

包括第一支撐銷22a、第一台座部26a及第一外螺紋部27a的銷結構體可由同一材料一體地形成,或者也可將多個構件組合而形成。此外,若將銷結構體的整體理解為第一支撐銷22a,則可將比第一台座部26a的上表面更靠上方的部分理解為第一銷本體部。The pin structure comprising the first support pin 22a, the first pedestal 26a, and the first externally threaded portion 27a can be integrally formed from the same material, or can be formed by combining multiple components. Furthermore, if the entire pin structure is considered to be the first support pin 22a, the portion above the upper surface of the first pedestal 26a can be considered to be the first pin body.

在圖6的例子中,第一支撐銷22a包含第一抵接部23a以及第一柱狀部25a。第一柱狀部25a具有沿上下方向延伸的柱狀的形狀,並豎立設置於第一台座部26a的上表面。即,第一柱狀部25a從第一台座部26a的上表面向上方延伸。第一柱狀部25a例如具有圓柱狀的形狀。在此情況下,與上下方向正交的水平剖面中的第一柱狀部25a的形狀為圓狀。例如第一柱狀部25a以等寬度沿著上下方向延伸。第一柱狀部25a的寬度(此處為直徑)例如設定為1 mm以上,作為具體的一例而設定為3 mm左右。In the example of FIG6 , the first support pin 22a includes a first abutment portion 23a and a first columnar portion 25a. The first columnar portion 25a has a columnar shape extending in the vertical direction and is vertically arranged on the upper surface of the first pedestal portion 26a. That is, the first columnar portion 25a extends upward from the upper surface of the first pedestal portion 26a. The first columnar portion 25a has, for example, a cylindrical shape. In this case, the shape of the first columnar portion 25a in a horizontal section perpendicular to the vertical direction is circular. For example, the first columnar portion 25a extends in the vertical direction with a constant width. The width (here, the diameter) of the first columnar portion 25a is, for example, set to 1 mm or more, and is set to approximately 3 mm as a specific example.

第一抵接部23a設置於第一柱狀部25a的上端面。第一抵接部23a例如具有錐體狀的形狀。作為具體的一例,第一抵接部23a可具有圓錐狀的形狀。或者,第一抵接部23a也可具有半球狀或半橢圓狀的形狀。在此情況下,第一抵接部23a的水平剖面的形狀也為圓狀。此種第一抵接部23a的寬度(此處為直徑)也隨著朝向上方而變小。第一抵接部23a的下端的寬度(此處為直徑)例如與第一柱狀部25a的寬度(此處為直徑)相等,例如設定為1 mm以上,作為更具體的一例而設定為3 mm左右。第一抵接部23a的上端(即,頂點)與基板9的第二面F2抵接。The first abutting portion 23a is provided on the upper end surface of the first columnar portion 25a. The first abutting portion 23a has, for example, a pyramidal shape. As a specific example, the first abutting portion 23a may have a conical shape. Alternatively, the first abutting portion 23a may also have a hemispherical or semi-elliptical shape. In this case, the shape of the horizontal cross-section of the first abutting portion 23a is also circular. The width (here, the diameter) of such a first abutting portion 23a also decreases upward. The width (here, the diameter) of the lower end of the first abutting portion 23a is, for example, equal to the width (here, the diameter) of the first columnar portion 25a, and is, for example, set to 1 mm or more, and as a more specific example, is set to about 3 mm. The upper end (ie, the apex) of the first abutting portion 23 a abuts against the second surface F2 of the substrate 9 .

如以上所述,在圖6的例子中,第一支撐銷22a具有其寬度(此處為直徑)隨著朝向上方而單調非增加地減少的棒狀的形狀。在圖6的例子中,第一支撐銷22a的寬度在第一柱狀部25a中不依賴於上下方向而恒定,在第一抵接部23a中隨著朝向上方而單調地減少。As described above, in the example of Figure 6 , the first support pin 22a has a rod-like shape, with its width (here, diameter) decreasing monotonically and non-increasingly as it moves upward. In the example of Figure 6 , the width of the first support pin 22a is constant in the first columnar portion 25a, independent of the vertical direction, and decreases monotonically upward in the first abutting portion 23a.

對於第一支撐銷22a的材料,例如可應用聚醚醚酮(polyether ether ketone,PEEK)或聚醯亞胺(PI)等樹脂材料。例如,通過適當調整樹脂材料的摩擦力,第一支撐銷22a可利用第一支撐銷22a的上端與基板9的第二面F2之間的摩擦力,以基板9不沿水平方向偏移的方式從下方支撐基板9。第一支撐銷22a例如是實心材料。The first support pins 22a can be made of a resin material such as polyetheretherketone (PEEK) or polyimide (PI). By appropriately adjusting the friction of the resin material, the first support pins 22a can utilize the friction between the upper ends of the first support pins 22a and the second surface F2 of the substrate 9 to support the substrate 9 from below, preventing the substrate 9 from shifting horizontally. The first support pins 22a can be made of, for example, solid material.

接著,對第一抵接部23a及第一柱狀部25a的上下方向上的長度的一例進行說明。在圖6的例子中,第一抵接部23a的長度與第一柱狀部25a的長度相比非常短。即,第一柱狀部25a最長。換言之,第一柱狀部25a相對於第一支撐銷22a的上下方向上的整體所占的比例最大。因此,第一支撐銷22a的粗細能夠由第一柱狀部25a的粗細代表。即,第一柱狀部25a的寬度(此處為直徑)主要表示第一支撐銷22a的粗細。Next, we will explain an example of the vertical lengths of the first contact portion 23a and the first columnar portion 25a. In the example shown in Figure 6, the length of the first contact portion 23a is significantly shorter than that of the first columnar portion 25a. In other words, the first columnar portion 25a occupies the largest proportion of the first support pin 22a in the vertical direction. Therefore, the thickness of the first support pin 22a can be represented by the thickness of the first columnar portion 25a. In other words, the width (here, the diameter) of the first columnar portion 25a primarily reflects the thickness of the first support pin 22a.

在圖7的例子中,第二支撐銷22b豎立設置於第二台座部26b的上表面。即,第二支撐銷22b從第二台座部26b的上表面朝向上方延伸。第二台座部26b形成得比第二支撐銷22b寬。在圖7的例子中,在第二台座部26b的下表面設置有第二外螺紋部27b。第二外螺紋部27b具有從第二台座部26b的下表面向下方延伸的柱狀的形狀,且在其側面形成有螺紋牙。第二支撐銷22b通過第二外螺紋部27b的螺紋作用而安裝於支撐板21。包括第二支撐銷22b、第二台座部26b及第二外螺紋部27b的銷結構體可由同一材料一體地形成,或者也可將多個構件組合而形成。此外,若將銷結構體的整體理解為第二支撐銷22b,則可將比第二台座部26b的上表面更靠上方的部分理解為第二銷本體部。In the example of Figure 7 , the second support pin 22b is vertically mounted on the upper surface of the second pedestal 26b. That is, the second support pin 22b extends upward from the upper surface of the second pedestal 26b. The second pedestal 26b is formed wider than the second support pin 22b. In the example of Figure 7 , a second externally threaded portion 27b is mounted on the lower surface of the second pedestal 26b. The second externally threaded portion 27b has a columnar shape extending downward from the lower surface of the second pedestal 26b and has threaded teeth formed on its side surface. The second support pin 22b is attached to the support plate 21 through the threading action of the second externally threaded portion 27b. The pin structure comprising the second support pin 22b, the second pedestal 26b, and the second externally threaded portion 27b may be integrally formed from the same material, or may be formed by combining multiple components. Furthermore, if the entire pin structure is considered to be the second support pin 22b, the portion above the upper surface of the second pedestal 26b may be considered to be the second pin body.

在圖7的例子中,第二支撐銷22b包含第二抵接部23b以及第二柱狀部25b。第二柱狀部25b具有沿上下方向延伸的柱狀的形狀,並豎立設置於第二台座部26b的上表面。即,第二柱狀部25b從第二台座部26b的上表面向上方延伸。第二柱狀部25b例如具有圓柱狀的形狀。在此情況下,第二柱狀部25b的水平剖面的形狀為圓狀。第二柱狀部25b例如以等寬度沿著上下方向延伸。第二柱狀部25b的寬度(此處為直徑)例如設定為0.6 mm以上,作為更具體的一例而設定為1 mm左右。In the example of FIG7 , the second support pin 22b includes a second abutment portion 23b and a second columnar portion 25b. The second columnar portion 25b has a columnar shape extending in the vertical direction and is vertically arranged on the upper surface of the second pedestal portion 26b. That is, the second columnar portion 25b extends upward from the upper surface of the second pedestal portion 26b. The second columnar portion 25b has, for example, a cylindrical shape. In this case, the horizontal cross-section of the second columnar portion 25b is circular. The second columnar portion 25b extends in the vertical direction, for example, with a constant width. The width (here, the diameter) of the second columnar portion 25b is, for example, set to 0.6 mm or more, and as a more specific example, is set to approximately 1 mm.

第二抵接部23b設置於第二柱狀部25b的上端面。第二抵接部23b例如具有錐體狀的形狀。作為具體的一例,第二抵接部23b也可具有圓錐狀的形狀。或者,第二抵接部23b具有半球狀或半橢圓狀的形狀。在此情況下,第二抵接部23b的水平剖面的形狀也為圓狀。此種第二抵接部23b的寬度(此處為直徑)也隨著朝向上方而變小。第二抵接部23b的下端的寬度(此處為直徑)例如與第二柱狀部25b的寬度(此處為直徑)相等,例如設定為0.6 mm以上,作為更具體的一例而設定為1 mm左右。第二抵接部23b的上端(即,頂點)與基板9的第二面F2抵接。The second abutting portion 23b is provided on the upper end surface of the second columnar portion 25b. The second abutting portion 23b has, for example, a pyramidal shape. As a specific example, the second abutting portion 23b may also have a conical shape. Alternatively, the second abutting portion 23b has a hemispherical or semi-elliptical shape. In this case, the shape of the horizontal cross-section of the second abutting portion 23b is also circular. The width (here, the diameter) of such a second abutting portion 23b also decreases upward. The width (here, the diameter) of the lower end of the second abutting portion 23b is, for example, equal to the width (here, the diameter) of the second columnar portion 25b, and is, for example, set to 0.6 mm or more, and as a more specific example, is set to about 1 mm. The upper end (ie, the apex) of the second abutting portion 23 b abuts against the second surface F2 of the substrate 9 .

如以上所述,在圖7的例子中,第二支撐銷22b具有其寬度(此處為直徑)隨著朝向上方而單調非增加地減少的棒狀的形狀。在圖7的例子中,第二支撐銷22b的寬度在第二柱狀部25b中不依賴於上下方向而恒定,在第二抵接部23b中隨著朝向上方而單調地減少。As described above, in the example of Figure 7 , the second support pin 22b has a rod-like shape, with its width (here, diameter) decreasing monotonically and non-increasingly as it moves upward. In the example of Figure 7 , the width of the second support pin 22b is constant in the second columnar portion 25b, independent of the vertical direction, and decreases monotonically upward in the second abutting portion 23b.

對於第二支撐銷22b的材料,例如與第一支撐銷22a同樣地,可應用聚醚醚酮或聚醯亞胺等樹脂材料。第二支撐銷22b例如是實心材料。The second supporting pin 22b may be made of a resin material such as polyetheretherketone or polyimide, similar to the first supporting pin 22a. The second supporting pin 22b may be made of a solid material.

接著,對第二抵接部23b及第二柱狀部25b的上下方向上的長度進行說明。在圖7的例子中,第二抵接部23b的長度與第二柱狀部25b的長度相比非常短。即,第二柱狀部25b相對於第二支撐銷22b的上下方向上的整體所占的比例最大。因此,第二支撐銷22b的粗細能夠由第二柱狀部25b的粗細代表。即,第二柱狀部25b的寬度(此處為直徑)主要表示第二支撐銷22b的粗細。Next, the vertical lengths of the second abutting portion 23b and the second columnar portion 25b will be explained. In the example shown in Figure 7 , the length of the second abutting portion 23b is significantly shorter than that of the second columnar portion 25b. In other words, the second columnar portion 25b occupies the largest proportion of the second support pin 22b's overall vertical length. Therefore, the thickness of the second support pin 22b can be represented by the thickness of the second columnar portion 25b. In other words, the width (here, the diameter) of the second columnar portion 25b primarily reflects the thickness of the second support pin 22b.

如根據圖6及圖7的比較可理解那樣,第一支撐銷22a比第二支撐銷22b粗。此處,第一柱狀部25a比第二柱狀部25b粗。第一柱狀部25a的寬度(此處為直徑)與第二柱狀部25b的寬度(此處為直徑)之差例如可為0.5 mm以上,也可為1 mm以上,也可為2 mm以上。As can be understood from a comparison of Figures 6 and 7 , the first support pin 22a is thicker than the second support pin 22b. Here, the first columnar portion 25a is thicker than the second columnar portion 25b. The difference between the width (here, diameter) of the first columnar portion 25a and the width (here, diameter) of the second columnar portion 25b can be, for example, 0.5 mm or greater, 1 mm or greater, or 2 mm or greater.

此處,進一步對同一水平剖面中的第一支撐銷22a的寬度與第二支撐銷22b的寬度的比較進行考察。如圖6及圖7所示,在第一支撐銷22a及第二支撐銷22b的上下方向的整體上,任意的水平剖面中的第一支撐銷22a的寬度可為第二支撐銷22b的寬度以上。例如,第一支撐銷22a的第一抵接部23a的上部及第二支撐銷22b的第二抵接部23b例如可具有同一形狀。根據所述形狀,水平剖面中的第一抵接部23a的上部的寬度與第二抵接部23b的寬度相互相等。另一方面,第一抵接部23a的下部的寬度隨著朝向下方而進一步變大,因此在同一水平剖面中,第一支撐銷22a的第一抵接部23a的下部的寬度比第二支撐銷22b的第二柱狀部25b的寬度大。另外,第一柱狀部25a的寬度也在同一水平剖面中比第二柱狀部25b的寬度大。根據此種形狀,在任意的水平剖面中,第一支撐銷22a與第二支撐銷22b為相同粗細,或者比第二支撐銷22b粗。Here, we further examine the comparison between the widths of the first support pin 22a and the second support pin 22b in the same horizontal cross-section. As shown in Figures 6 and 7, the width of the first support pin 22a in any horizontal cross-section can be greater than the width of the second support pin 22b in the entire vertical direction of the first support pin 22a and the second support pin 22b. For example, the upper portion of the first abutting portion 23a of the first support pin 22a and the second abutting portion 23b of the second support pin 22b can have the same shape. Due to these shapes, the width of the upper portion of the first abutting portion 23a and the width of the second abutting portion 23b in the horizontal cross-section are equal. On the other hand, the width of the lower portion of the first abutting portion 23a increases downward. Therefore, in the same horizontal cross-section, the lower portion of the first abutting portion 23a of the first support pin 22a is wider than the width of the second columnar portion 25b of the second support pin 22b. Furthermore, the width of the first columnar portion 25a is also wider than the width of the second columnar portion 25b in the same horizontal cross-section. Due to this shape, in any horizontal cross-section, the first support pin 22a and the second support pin 22b have the same thickness, or are thicker than the second support pin 22b.

此外,第一支撐銷22a與第二支撐銷22b的粗細的比較例如也可通過在同一水平剖面中,相當於第一支撐銷22a的側面的輪廓的第一整周長度與相當於第二支撐銷22b的側面的輪廓的第二整周長度的比較來規定。在所述例子中,第一支撐銷22a及第二支撐銷22b的水平剖面的形狀為圓狀,因此整周長度相當於圓周的長度。Furthermore, the thickness of the first support pin 22a and the second support pin 22b can also be determined by comparing, for example, a first full circumference length corresponding to the side profile of the first support pin 22a and a second full circumference length corresponding to the side profile of the second support pin 22b in the same horizontal cross-section. In this example, the horizontal cross-sections of the first support pin 22a and the second support pin 22b are circular, and therefore the full circumference length corresponds to the length of the circle.

此處,在使水平剖面沿上下方向移動時,第一整周長度比第二整周長度長的上下方向上的範圍只要相對於第一支撐銷22a及第二支撐銷22b的上下方向的長度占5成以上即可。在此情況下,可以說第一支撐銷22a比第二支撐銷22b粗。所述比例例如可為6成以上,也可為7成以上,也可為8成以上。Here, when the horizontal cross section is moved vertically, the vertical range in which the first full circumference is longer than the second full circumference only needs to account for 50% or more of the vertical length of the first support pin 22a and the second support pin 22b. In this case, the first support pin 22a can be said to be thicker than the second support pin 22b. This ratio can be, for example, 60% or more, 70% or more, or 80% or more.

圖8是表示基板9與第一支撐銷22a及第二支撐銷22b的位置關係的第一例的圖。在圖8中,作為基板9的下表面的第二面F2中,由第一支撐銷22a支撐的位置用白色圓圈表示,由第二支撐銷22b支撐的位置用黑色圓圈表示。另外,在圖8中,基板9中的塗布區域A1的外緣與基板9中的周緣區域B1及內側區域B2的邊界B3分別以雙點劃線描繪。Figure 8 shows a first example of the positional relationship between the substrate 9 and the first and second support pins 22a and 22b. In Figure 8, the locations supported by the first support pins 22a on the second surface F2, which serves as the lower surface of the substrate 9, are indicated by white circles, while the locations supported by the second support pins 22b are indicated by black circles. Furthermore, in Figure 8, the outer edge of the coating area A1 on the substrate 9 and the boundaries B3 between the peripheral area B1 and the inner area B2 of the substrate 9 are depicted with double-dotted lines.

如圖8所示,若干第一支撐銷22a支撐基板9的周緣區域B1。即,這些第一支撐銷22a的上端與基板9的周緣區域B1的下表面接觸。基板9的周緣區域B1具有在平面視時呈矩形的框狀形狀,因此這些第一支撐銷22a也沿著矩形形狀的框在整周上排列。在圖8的例子中,在基板9的周緣區域B1的上表面未形成塗布膜90。即,周緣區域B1相當於非塗布區域A2。另外,在圖8的例子中,剩餘的若干第一支撐銷22a位於基板9的內側區域B2中的塗布區域A1以外的區域。即,剩餘的第一支撐銷22a支撐基板9的內側區域B2,但是支撐內側區域B2中的非塗布區域A2。換言之,剩餘的第一支撐銷22a的上端與基板9的內側區域B2中的非塗布區域A2的下表面接觸。As shown in FIG8 , a plurality of first support pins 22a support the peripheral area B1 of the substrate 9. Specifically, the upper ends of these first support pins 22a contact the lower surface of the peripheral area B1 of the substrate 9. The peripheral area B1 of the substrate 9 has a rectangular frame shape when viewed in plan, so these first support pins 22a are also arranged along the entire circumference of the rectangular frame. In the example of FIG8 , the coating film 90 is not formed on the upper surface of the peripheral area B1 of the substrate 9. That is, the peripheral area B1 corresponds to the non-coated area A2. Furthermore, in the example of FIG8 , the remaining plurality of first support pins 22a are located in an area outside the coated area A1 within the inner area B2 of the substrate 9. That is, the remaining first support pins 22a support the inner area B2 of the substrate 9, but also support the non-coated area A2 in the inner area B2. In other words, the upper ends of the remaining first support pins 22a contact the lower surface of the non-coated area A2 in the inner area B2 of the substrate 9.

另一方面,多個第二支撐銷22b支撐基板9的內側區域B2中的塗布區域A1。即,多個第二支撐銷22b的上端與基板9的塗布區域A1的下表面接觸。在塗布區域A1形成有圖案狀的塗布膜90的情況下,若干第二支撐銷22b能夠支撐塗布區域A1中的被覆區域A3,剩餘的第二支撐銷22b能夠支撐塗布區域A1中的露出區域A4。在塗布區域A1的整體形成有塗布膜90的情況下,塗布區域A1的整體相當於被覆區域A3,因此所有的第二支撐銷22b支撐被覆區域A3。Meanwhile, the plurality of second support pins 22b support the coating area A1 within the inner area B2 of the substrate 9. Specifically, the upper ends of the plurality of second support pins 22b contact the lower surface of the coating area A1 of the substrate 9. If the coating area A1 is coated with a patterned coating film 90, some of the second support pins 22b can support the covered area A3 within the coating area A1, while the remaining second support pins 22b can support the exposed area A4 within the coating area A1. If the entire coating area A1 is coated with the coating film 90, the entire coating area A1 corresponds to the covered area A3, and therefore all of the second support pins 22b support the covered area A3.

如以上所述,在圖8的例子中,所有的第二支撐銷22b與基板9中的塗布區域A1的下表面抵接,所有的第一支撐銷22a與基板9中的非塗布區域A2的下表面抵接。As described above, in the example of FIG. 8 , all the second support pins 22 b abut against the lower surface of the coated area A1 of the substrate 9 , and all the first support pins 22 a abut against the lower surface of the non-coated area A2 of the substrate 9 .

圖9是示意性地表示減壓下的腔室10內的氣流的一例的圖。當排氣部30將腔室10內的氣體排出時,腔室10內的氣體的溫度由於絕熱膨脹而急劇下降。腔室10內的氣體的溫度能夠下降至例如攝氏零下(-)20度左右。另一方面,腔室10內的物體(固體)的溫度也下降。例如,基板9的溫度會由於伴隨塗布膜90的溶媒蒸發的汽化熱的吸收及基板9與周圍的氣體之間的熱交換而下降。另外,例如支撐銷22的溫度由於支撐銷22與周圍的氣體的熱交換而下降。然而,這些物體的溫度下降與由於絕熱膨脹而產生的氣體的溫度下降相比並不那麼大,例如,支撐銷22的溫度下降量為幾度左右(例如2度左右以下)。因此,支撐銷22的溫度例如為攝氏23度左右。Figure 9 schematically illustrates an example of the airflow within chamber 10 under reduced pressure. When the exhaust unit 30 exhausts the air within chamber 10, the temperature of the air within chamber 10 drops rapidly due to adiabatic expansion. The temperature of the air within chamber 10 can drop to, for example, approximately -20 degrees Celsius. Meanwhile, the temperature of the objects (solids) within chamber 10 also drops. For example, the temperature of substrate 9 drops due to the absorption of the heat of vaporization associated with the evaporation of the solvent in coating film 90 and heat exchange between substrate 9 and the surrounding air. Furthermore, the temperature of support pins 22, for example, drops due to heat exchange between the support pins 22 and the surrounding air. However, the temperature drop of these objects is not as great as the temperature drop of the gas due to adiabatic expansion. For example, the temperature drop of the support pin 22 is only a few degrees (e.g., less than 2 degrees). Therefore, the temperature of the support pin 22 is, for example, about 23 degrees Celsius.

通過所述支撐銷22與氣體的熱交換,在支撐銷22的周圍將氣體加熱。因此,在第一支撐銷22a及第二支撐銷22b的周圍分別產生上升氣流Ga及上升氣流Gb。氣體通過上升氣流Ga而沿著第一支撐銷22a上升,氣體通過上升氣流Gb而沿著第二支撐銷22b上升。因此,能夠通過上升氣流Ga及上升氣流Gb而將氣體局部地供給至基板9的第二面F2。因此,基板9中的與支撐銷22的接觸部位的周圍(以下,稱為銷附近區域)與遠離所述銷附近區域的區域(以下,稱為銷分離區域)相比,容易受到上升氣流Ga及上升氣流Gb的影響。其結果,基板9中的銷附近區域的溫度與銷分離區域的溫度之差變大,基板9的溫度分佈可能會變得不均勻。The heat exchange between the support pins 22 and the gas heats the gas around the support pins 22. Consequently, an ascending airflow Ga and an ascending airflow Gb are generated around the first support pin 22a and the second support pin 22b, respectively. The ascending airflow Ga causes the gas to rise along the first support pin 22a, while the ascending airflow Gb causes the gas to rise along the second support pin 22b. Consequently, the ascending airflows Ga and Gb enable gas to be locally supplied to the second surface F2 of the substrate 9. Consequently, the area around the contact point with the support pins 22 on the substrate 9 (hereinafter referred to as the pin-proximate area) is more susceptible to the influence of the ascending airflows Ga and Gb than the area farther from the pin-proximate area (hereinafter referred to as the pin-separated area). As a result, the temperature difference between the area near the pins in the substrate 9 and the area separated from the pins becomes larger, and the temperature distribution of the substrate 9 may become uneven.

且說,在本實施方式中,第二支撐銷22b比第一支撐銷22a細。即,水平剖面中的第二支撐銷22b的第二整周長度比所述水平剖面中的第一支撐銷22a的第一整周長度短。進一步換言之,第二支撐銷22b的側面的表面積比第一支撐銷22a的側面的表面積小。因此,第一支撐銷22a周圍的氣體以更大的表面積與第一支撐銷22a進行熱交換,第二支撐銷22b周圍的氣體以更小的表面積與第二支撐銷22b進行熱交換。因此,上升氣流Ga在更寬的範圍(即,粗的第一支撐銷22a的周圍)產生,上升氣流Gb在更窄的範圍(即,細的第二支撐銷22b的周圍)產生。因此,上升氣流Gb的產生量(例如體積流量)比上升氣流Ga的產生量小。在圖9中,以箭頭線的粗細示意性地表示上升氣流Ga及上升氣流Gb的產生量。In this embodiment, the second support pin 22b is thinner than the first support pin 22a. Specifically, the second full circumference of the second support pin 22b in a horizontal cross-section is shorter than the first full circumference of the first support pin 22a in the horizontal cross-section. In other words, the side surface area of the second support pin 22b is smaller than the side surface area of the first support pin 22a. Therefore, the gas surrounding the first support pin 22a exchanges heat with the first support pin 22a over a larger surface area, while the gas surrounding the second support pin 22b exchanges heat with the second support pin 22b over a smaller surface area. Therefore, the upward airflow Ga is generated over a wider area (i.e., around the thick first support pin 22a), while the upward airflow Gb is generated over a narrower area (i.e., around the thin second support pin 22b). Consequently, the amount of upward airflow Gb generated (e.g., volume flow rate) is smaller than that of the upward airflow Ga. Figure 9 schematically illustrates the amounts of upward airflow Ga and Gb generated by the thickness of the arrows.

第二支撐銷22b與基板9的塗布區域A1的下表面抵接。因此,通過第二支撐銷22b周圍的上升氣流Gb,能夠向塗布區域A1的下表面局部地供給氣體。然而,上升氣流Gb的產生量小,因此並不那麼阻礙塗布區域A1中的溫度的均勻性。因此,和採用第一支撐銷22a作為與塗布區域A1的下表面抵接的支撐銷22的結構相比,可提高基板9的塗布區域A1中的溫度分佈的均勻性。其結果,可使塗布膜90更均勻地乾燥。換言之,能夠抑制形成於基板9的上表面的塗布膜90中產生乾燥不均。The second support pin 22b abuts the lower surface of the coating area A1 of the substrate 9. Therefore, gas can be locally supplied to the lower surface of the coating area A1 through the rising airflow Gb around the second support pin 22b. However, the amount of rising airflow Gb generated is small, so it does not significantly hinder the temperature uniformity in the coating area A1. Therefore, compared with the structure in which the first support pin 22a is used as the support pin 22 abutting the lower surface of the coating area A1, the uniformity of the temperature distribution in the coating area A1 of the substrate 9 can be improved. As a result, the coating film 90 can be dried more evenly. In other words, the occurrence of drying unevenness in the coating film 90 formed on the upper surface of the substrate 9 can be suppressed.

另一方面,第一支撐銷22a與基板9的非塗布區域A2的下表面抵接。因此,通過上升氣流Ga,能夠向基板9的非塗布區域A2的下表面局部地供給氣體。所述上升氣流Ga的產生量比較大,因此非塗布區域A2中的溫度分佈與塗布區域A1相比可能會變得不均勻。然而,在所述例子中,在非塗布區域A2未形成塗布膜90,因此幾乎不會導致塗布膜90的乾燥不良。On the other hand, the first support pin 22a abuts the lower surface of the non-coated area A2 of the substrate 9. Therefore, the ascending airflow Ga allows gas to be locally supplied to the lower surface of the non-coated area A2 of the substrate 9. The relatively large amount of this ascending airflow Ga may cause the temperature distribution in the non-coated area A2 to become less uniform than in the coated area A1. However, in this example, since the coating film 90 is not formed in the non-coated area A2, there is little chance of poor drying of the coating film 90.

而且,第一支撐銷22a比第二支撐銷22b粗,因此具有比第二支撐銷22b的剛性更高的剛性。因此,第一支撐銷22a可更牢固地支撐基板9的周緣區域B1。為了進行比較,對在所有支撐銷22採用細的第二支撐銷22b的結構(以下,稱為比較結構)進行考察。在所述比較結構中,在水平方向上對基板9施加外力時,基板9能夠沿水平方向位移。其原因在於:支撐銷22越細,支撐銷22對水平方向的外力越弱。例如,支撐銷22能夠以台座部為固定端撓曲。在搬入搬出基板9時或對腔室10內進行減壓時,能夠對基板9施加具有水平方向成分的外力,因此基板9能夠沿水平方向位移。此種基板9的水平方向上的位移不優選。Furthermore, the first support pins 22a are thicker than the second support pins 22b and therefore have a higher rigidity. Therefore, the first support pins 22a can more firmly support the peripheral area B1 of the substrate 9. For comparison, a structure in which all support pins 22 use thin second support pins 22b (hereinafter referred to as the comparison structure) was examined. In this comparison structure, when an external force is applied to the substrate 9 in the horizontal direction, the substrate 9 can displace horizontally. This is because the thinner the support pins 22, the less resistant they are to horizontal external forces. For example, the support pins 22 can bend with the base portion as the fixed end. When the substrate 9 is loaded or unloaded or when the pressure in the chamber 10 is reduced, an external force with a horizontal component can be applied to the substrate 9, causing the substrate 9 to displace horizontally. Such horizontal displacement of the substrate 9 is not preferred.

與此相對,在本實施方式中,支撐基板9的周緣區域B1的第一支撐銷22a比支撐基板9的內側區域B2中的塗布區域A1的第二支撐銷22b粗。因此,第一支撐銷22a可以更高的剛性支撐基板9的周緣區域B1。因此,即使向基板9施加具有水平方向成分的外力,粗的第一支撐銷22a也可有效地抑制基板9的水平方向上的位移。而且,若第一支撐銷22a沿著基板9的周緣區域B1的周向在整周上排列,則可更牢固地支撐基板9的周緣區域B1,可更有效地抑制基板9的水平方向上的位移。In contrast, in this embodiment, the first support pins 22a supporting the peripheral area B1 of the substrate 9 are thicker than the second support pins 22b supporting the coated area A1 in the inner area B2 of the substrate 9. Therefore, the first support pins 22a can support the peripheral area B1 of the substrate 9 with greater rigidity. Consequently, even when external forces with a horizontal component are applied to the substrate 9, the thick first support pins 22a effectively suppress horizontal displacement of the substrate 9. Furthermore, by arranging the first support pins 22a along the entire circumference of the peripheral area B1 of the substrate 9, the peripheral area B1 of the substrate 9 can be more firmly supported, and horizontal displacement of the substrate 9 can be more effectively suppressed.

<<排氣部30>> 參照圖1,排氣部30為將腔室10內的氣體排出的部分。如圖1及圖2所示,在腔室10的底板部11中的與基板9在上下方向上對向的部分,例如設置有四個排氣口16a、16b、16c、16d。排氣部30例如具有排氣配管31、四個單獨閥Va、Vb、Vc、Vd、主閥Ve、以及真空泵32。排氣配管31例如具有四個單獨配管31a、31b、31c、31d與一個主配管31e。例如,單獨配管31a的一端連接於排氣口16a,單獨配管31b的一端連接於排氣口16b,單獨配管31c的一端連接於排氣口16c,單獨配管31d的一端連接於排氣口16d。例如,四個單獨配管31a、31b、31c、31d各自的另一端合流而連接於主配管31e的一端。例如,主配管31e的另一端連接於真空泵32。例如,單獨閥Va設置於單獨配管31a的路徑上,單獨閥Vb設置於單獨配管31b的路徑上,單獨閥Vc設置於單獨配管31c的路徑上,單獨閥Vd設置於單獨配管31d的路徑上。例如,主閥Ve設置於主配管31e的路徑上。 <<Exhaust Section 30>> Referring to Figure 1 , the exhaust section 30 is used to exhaust gases within the chamber 10. As shown in Figures 1 and 2 , four exhaust ports 16a, 16b, 16c, and 16d are provided in the portion of the bottom plate 11 of the chamber 10 that faces the substrate 9 in the vertical direction. The exhaust section 30 includes, for example, exhaust piping 31, four individual valves Va, Vb, Vc, and Vd, a main valve Ve, and a vacuum pump 32. The exhaust piping 31 includes, for example, four individual pipes 31a, 31b, 31c, and 31d, and a main pipe 31e. For example, one end of individual pipe 31a is connected to exhaust port 16a, one end of individual pipe 31b is connected to exhaust port 16b, one end of individual pipe 31c is connected to exhaust port 16c, and one end of individual pipe 31d is connected to exhaust port 16d. For example, the other ends of the four individual pipes 31a, 31b, 31c, and 31d merge and connect to one end of main pipe 31e. For example, the other end of main pipe 31e is connected to vacuum pump 32. For example, individual valve Va is installed on the path of individual pipe 31a, individual valve Vb is installed on the path of individual pipe 31b, individual valve Vc is installed on the path of individual pipe 31c, and individual valve Vd is installed on the path of individual pipe 31d. For example, the main valve Ve is installed on the path of the main pipe 31e.

此處,例如,當在通過閘門部15將搬入搬出口14關閉的狀態下,將四個單獨閥Va、Vb、Vc、Vd的至少一個與一個主閥Ve打開,使真空泵32運行時,腔室10內的氣體經由排氣配管31向腔室10的外部排出。由此,例如,可使腔室10的內部空間10s的氣壓下降。四個單獨閥Va、Vb、Vc、Vd例如是用於各別地調節來自四個排氣口16a、16b、16c、16d的排氣量的閥。對於四個單獨閥Va、Vb、Vc、Vd的各者,例如可應用基於來自控制部80的指令在開狀態與閉狀態之間切換的閥(也稱為開閉閥)。主閥Ve例如是用於調整來自四個排氣口16a、16b、16c、16d的合計的排氣量的閥。對於主閥Ve,例如可應用能夠基於來自控制部80的指令調節開度的閥(也稱為開度控制閥)。Here, for example, when the loading/unloading port 14 is closed by the gate portion 15, at least one of the four individual valves Va, Vb, Vc, and Vd and the main valve Ve are opened to operate the vacuum pump 32. Gas within the chamber 10 is discharged to the exterior of the chamber 10 via the exhaust pipe 31. This, for example, reduces the pressure in the internal space 10s of the chamber 10. The four individual valves Va, Vb, Vc, and Vd are valves used to adjust the amount of gas discharged from the four exhaust ports 16a, 16b, 16c, and 16d, respectively. Each of the four individual valves Va, Vb, Vc, and Vd can be, for example, a valve that switches between an open and closed state based on a command from the control unit 80 (also known as an on-off valve). The main valve Ve is, for example, a valve used to adjust the total exhaust volume from the four exhaust ports 16a, 16b, 16c, and 16d. For example, the main valve Ve can be a valve whose opening can be adjusted based on a command from the control unit 80 (also known as an opening control valve).

<<升降部100>> 升降部100為在腔室10內使支撐部20升降的部分。換言之,例如,升降部100具有可使支撐部20升降的機構(也稱為升降機構)。在圖1中,為了避免附圖的複雜化,概念性地示出了升降部100。對於升降部100,例如可應用直動型馬達或汽缸等驅動裝置。如圖3所示,升降部100例如具有本體部100a與移動部100b。本體部100a例如在腔室10的外部固定於省略了圖示的裝置框架。移動部100b例如可相對於本體部100a沿上下方向移動。對於移動部100b,例如可應用棒狀的構件等。移動部100b例如以插通至腔室10的底板部11的貫通孔11h的狀態存在。而且,例如在移動部100b的上端部固定有支撐部20。此處,例如,若在底板部11的下表面與移動部100b之間設置波紋管等,則能夠將底板部11與移動部100b之間的間隙密閉。例如,在支撐部20具有多個支撐板21的情況下,移動部100b具有針對每一支撐板21固定於支撐板21且插通至底板部11的貫通孔11h的棒狀的部分(也稱為棒狀部)、將多個棒狀部連結的部分(也稱為連結部)、以及連接於連結部且能夠滑動地支撐於本體部100a的部分(也稱為滑動部)。 <<Lifting Unit 100>> The lifting unit 100 is the part that raises and lowers the support unit 20 within the chamber 10. In other words, for example, the lifting unit 100 includes a mechanism (also referred to as a lifting mechanism) that can raise and lower the support unit 20. In Figure 1, the lifting unit 100 is shown conceptually to avoid complication. A drive device such as a linear motor or an air cylinder can be used for the lifting unit 100. As shown in Figure 3, the lifting unit 100 includes, for example, a main body 100a and a movable portion 100b. The main body 100a is fixed to a device frame (not shown) outside the chamber 10, for example. The movable portion 100b can move vertically relative to the main body 100a. For example, a rod-shaped member can be used for the movable portion 100b. The movable portion 100b exists, for example, in a state of being inserted into a through-hole 11h of the bottom plate 11 of the chamber 10. Furthermore, a support portion 20 is fixed to the upper end of the movable portion 100b. For example, by providing a bellows or the like between the lower surface of the bottom plate 11 and the movable portion 100b, the gap between the bottom plate 11 and the movable portion 100b can be sealed. For example, if the support portion 20 includes multiple support plates 21, the movable portion 100b includes a rod-shaped portion (also referred to as a rod portion) fixed to the support plate 21 for each support plate 21 and inserted into the through hole 11h of the bottom plate 11; a portion connecting the multiple rod-shaped portions (also referred to as a connecting portion); and a portion connected to the connecting portion and slidably supported by the main body 100a (also referred to as a sliding portion).

此處,例如,當使升降部100運行時,支撐部20在下降位置H1(圖1及圖3中點劃線所示的位置)與比下降位置H1高的上升位置H2(圖1及圖3中雙點劃線所示的位置)之間沿上下方向升降。此時,例如,多個支撐板21能夠一體地升降。Here, for example, when the lifting unit 100 is operated, the support unit 20 is vertically moved between a lowered position H1 (the position indicated by the dotted line in Figures 1 and 3 ) and an elevated position H2 (the position indicated by the double-dotted line in Figures 1 and 3 ), which is higher than the lowered position H1. In this case, for example, the plurality of support plates 21 can be raised and lowered integrally.

<<底面整流板40>> 底面整流板40是用於在利用排氣部30對腔室10內進行減壓時限制內部空間10s中的氣體流動的板。例如,底面整流板40配置成位於由支撐部20支撐的基板9與腔室10的底板部11之間。底面整流板40例如經由省略了圖示的多個支柱而固定於腔室10的底板部11。如圖2所示,例如,底面整流板40具有在俯視時呈正方形形狀的形狀。而且,例如,底面整流板40的俯視時的各邊的長度比長方形形狀的基板9的長邊及短邊中的任一者長。因此,例如,無論配置於支撐部20上的基板9的朝向如何,在俯視時,底面整流板40均比基板9大。另外,底面整流板40例如具有處於插通有升降部100的移動部100b的狀態的貫通孔40h。在貫通孔40h中,底面整流板40與移動部100b空開極小的間隔地存在。 <<Bottom Surface Straightener 40>> The bottom surface straightener 40 is a plate used to restrict the flow of gas within the internal space 10s when the exhaust unit 30 depressurizes the chamber 10. For example, the bottom surface straightener 40 is positioned between the substrate 9 supported by the support unit 20 and the bottom plate 11 of the chamber 10. The bottom surface straightener 40 is secured to the bottom plate 11 of the chamber 10 via, for example, multiple supports (not shown). As shown in Figure 2 , the bottom surface straightener 40 has a square shape when viewed from above. Furthermore, for example, the length of each side of the bottom surface straightener 40 when viewed from above is longer than either the long side or the short side of the rectangular substrate 9. Therefore, regardless of the orientation of the substrate 9 on the support unit 20, the bottom surface straightener 40 appears larger than the substrate 9 when viewed from above. Furthermore, the bottom straightening plate 40 has a through-hole 40h through which the moving portion 100b of the lifting unit 100 is inserted. In the through-hole 40h, the bottom straightening plate 40 and the moving portion 100b are spaced very closely.

<<側面整流板50>> 側面整流板50是與底面整流板40一併用於在利用排氣部30對腔室10內進行減壓時限制內部空間10s中的氣體的流動的板。例如,側面整流板50配置成位於由配置於下降位置H1的支撐部20支撐的基板9與腔室10的側壁部12之間。此處,例如,以包圍由支撐部20支撐的基板9的周圍的方式配置有四個側面整流板50。例如,四個側面整流板50整體上形成包圍基板9的四角筒狀的整流板。另外,例如,底面整流板40及四個側面整流板50整體上形成有底筒狀的箱狀的整流板。 <<Side Straighteners 50>> The side straighteners 50, along with the bottom straighteners 40, are used to restrict the flow of gas within the internal space 10s when the exhaust unit 30 depressurizes the chamber 10. For example, the side straighteners 50 are positioned between the substrate 9 supported by the support unit 20 in the lowered position H1 and the sidewall 12 of the chamber 10. For example, four side straighteners 50 are positioned to surround the substrate 9 supported by the support unit 20. For example, the four side straighteners 50 collectively form a rectangular cylindrical straightener surrounding the substrate 9. Alternatively, the bottom straightener 40 and the four side straighteners 50 may collectively form a box-shaped straightener with a cylindrical bottom.

此處,例如,在利用排氣部30對腔室10內進行減壓時,腔室10的內部空間10s的氣體按照所述記載的順序通過側面整流板50與側壁部12之間的空間、底面整流板40與底板部11之間的空間、及排氣口16a、排氣口16b、排氣口16c、排氣口16d,排出至腔室10的外部。如此,例如,通過氣體在遠離基板9的空間中流動,而在基板9的附近難以形成氣流。而且,在基板9的周緣部難以產生集中的氣流。由此,例如,能夠抑制形成於基板9的上表面的塗布膜90產生乾燥不均。Here, for example, when the exhaust unit 30 depressurizes the interior of the chamber 10, the gas in the internal space 10s of the chamber 10 passes through the space between the side straighteners 50 and the sidewalls 12, the space between the bottom straighteners 40 and the bottom plate 11, and the exhaust ports 16a, 16b, 16c, and 16d in the order described above, and is exhausted to the exterior of the chamber 10. This allows the gas to flow through a space away from the substrate 9, for example, making it difficult for airflow to form near the substrate 9. Furthermore, it also prevents concentrated airflow from forming around the periphery of the substrate 9. This, for example, can suppress the occurrence of uneven drying of the coating film 90 formed on the upper surface of the substrate 9.

另外,此處,例如,如圖2所示,採用在俯視時四個排氣口16a、16b、16c、16d均位於正方形形狀的底面整流板40的對角線41上的結構。在此情況下,例如,通過各排氣口16a、排氣口16b、排氣口16c、排氣口16d,能夠形成相對於底面整流板40的中央(兩條對角線41的交點)對稱的氣流。由此,例如,在腔室10的內部空間10s中,能夠形成更均勻的氣流。Furthermore, as shown in FIG2 , for example, a structure is employed in which the four exhaust ports 16a, 16b, 16c, and 16d are all located on diagonal lines 41 of the square bottom flow plate 40 in a top view. In this case, for example, symmetrical airflows can be formed with respect to the center of the bottom flow plate 40 (the intersection of the two diagonal lines 41) through the exhaust ports 16a, 16b, 16c, and 16d. This allows for a more uniform airflow to be formed within the interior space 10s of the chamber 10, for example.

<<供氣部60>> 供氣部60為進行向腔室10內供給氣體的動作(也稱為供氣)的部分。如圖1所示,在腔室10的底板部11,例如設置有供氣口16f。供氣口16f例如位於底面整流板40的下方。供氣部60具有與供氣口16f連接的供氣配管61、供氣閥Vf、以及供氣源62。例如,供氣配管61的一端連接於供氣口16f。例如,供氣配管61的另一端連接於供氣源62。例如,供氣閥Vf設置於供氣配管61的路徑上。 <<Air Supply Unit 60>> The air supply unit 60 is responsible for supplying gas into the chamber 10 (also referred to as "air supply"). As shown in Figure 1 , the bottom plate 11 of the chamber 10 is provided with, for example, an air supply port 16f. The air supply port 16f is located, for example, below the bottom straightener 40. The air supply unit 60 includes an air supply pipe 61 connected to the air supply port 16f, an air supply valve Vf, and an air supply source 62. For example, one end of the air supply pipe 61 is connected to the air supply port 16f. For example, the other end of the air supply pipe 61 is connected to the air supply source 62. For example, the air supply valve Vf is provided along the path of the air supply pipe 61.

此處,例如,當將供氣閥Vf打開時,從供氣源62經由供氣配管61及供氣口16f向腔室10的內部空間10s供給氣體。由此,可使腔室10內的氣壓上升。從供氣源62供給的氣體例如可為氮氣等惰性氣體,也可為清潔乾燥空氣。清潔乾燥空氣例如能夠通過對一般的環境中的空氣實施去除粒子及水分的淨化而準備。Here, for example, when the air supply valve Vf is opened, gas is supplied from the air supply source 62 through the air supply pipe 61 and the air supply port 16f into the internal space 10s of the chamber 10. This increases the air pressure within the chamber 10. The gas supplied from the air supply source 62 can be, for example, an inert gas such as nitrogen, or clean dry air. Clean dry air can be prepared by, for example, purifying air from a general environment to remove particles and moisture.

<<壓力計70>> 壓力計70是測量腔室10的內部空間10s的氣壓的感測器。如圖1所示,例如,壓力計70安裝於腔室10的一部分。壓力計70例如可測量腔室10的內部空間10s的氣壓,並將其測量結果輸出至控制部80。 <<Pressure Gauge 70>> The pressure gauge 70 is a sensor that measures the air pressure within the internal space 10s of the chamber 10. As shown in Figure 1 , for example, the pressure gauge 70 is mounted on a portion of the chamber 10. The pressure gauge 70 measures the air pressure within the internal space 10s of the chamber 10 and outputs the measurement result to the control unit 80.

<<控制部80>> 控制部80是用於對減壓乾燥裝置1的各部的動作進行控制的單元。例如,控制部80可對排氣部30、供氣部60及升降部100等進行控制。控制部80例如包括具有中央處理器(Central Processing Unit,CPU)等處理器801、隨機存取記憶體(Random Access Memory,RAM)等記憶體802及硬碟驅動器等存儲部803的計算機。在存儲部803例如存儲有用於在減壓乾燥裝置1中執行通過減壓而使基板9上的塗布膜90乾燥的處理(也稱為減壓乾燥處理)的計算機程序(也稱為程序)803p及各種數據。存儲部803例如存儲程序803p,具有作為由計算機可讀取的非暫時的存儲介質的作用。控制部80例如從存儲部803向記憶體802讀出程序803p及數據,在處理器801中進行按照程序803p及數據的運算處理,由此對減壓乾燥裝置1的各部的動作進行控制。因此,例如,程序803p通過在減壓乾燥裝置1中由控制部80中所包含的處理器801執行,而可執行減壓乾燥處理。 <<Control Unit 80>> The control unit 80 controls the operation of various components of the reduced-pressure drying apparatus 1. For example, the control unit 80 controls the exhaust unit 30, the air supply unit 60, and the elevator 100. The control unit 80 includes, for example, a computer having a processor 801 such as a central processing unit (CPU), a memory 802 such as random access memory (RAM), and a storage unit 803 such as a hard drive. The storage unit 803 stores, for example, a computer program (also referred to as a program) 803p and various data for executing a process (also referred to as a decompression drying process) for drying the coating film 90 on the substrate 9 by decompression in the decompression drying apparatus 1. The storage unit 803, for example, stores the program 803p and functions as a non-temporary storage medium readable by a computer. The control unit 80 reads the program 803p and data from the storage unit 803 into the memory 802, and performs computations in accordance with the program 803p and data in the processor 801, thereby controlling the operation of various components of the decompression drying apparatus 1. Therefore, for example, program 803p can be executed by the processor 801 included in the control unit 80 in the reduced pressure drying apparatus 1 to perform the reduced pressure drying process.

另外,在控制部80例如也可連接有輸入部804、輸出部805、通信部806及驅動器807。輸入部804例如為響應於用戶的動作等將各種信號輸入至控制部80的部分。輸入部804中例如能夠包含輸入與用戶的操作相應的信號的操作部、輸入與用戶的聲音相應的信號的麥克風、及輸入與用戶的運動相應的信號的各種感測器等。輸出部805例如為以用戶能夠識別的實施方式輸出各種信息的部分。輸出部805中例如能夠包含顯示部、投影儀、及揚聲器等。顯示部也可為與輸入部804一體化的觸控面板。通信部806例如為通過有線或無線的通信部件等在與服務器等外部的裝置之間進行各種信息的收發的部分。例如,也可在存儲部803中存儲通過通信部806從外部的裝置接收的程序803p。驅動器807例如為能夠裝卸磁盤或光盤等可移動的存儲介質807m的部分。所述驅動器807例如在裝設有存儲介質807m的狀態下,進行所述存儲介質807m與控制部80之間的數據的授受。例如,也可通過存儲有程序803p的存儲介質807m裝設於驅動器807,而從存儲介質807m讀入程序803p並存儲於存儲部803內。此處,存儲介質807m例如存儲程序803p,具有作為由計算機可讀取的非暫時的存儲介質的作用。Furthermore, the control unit 80 may also be connected to, for example, an input unit 804, an output unit 805, a communication unit 806, and a driver 807. The input unit 804, for example, inputs various signals to the control unit 80 in response to user actions, etc. The input unit 804 may include, for example, an operation unit that inputs signals corresponding to user operations, a microphone that inputs signals corresponding to the user's voice, and various sensors that input signals corresponding to the user's movements. The output unit 805, for example, outputs various information in a manner recognizable to the user. The output unit 805 may include, for example, a display unit, a projector, and a speaker. The display unit may also be a touch panel integrated with the input unit 804. The communication unit 806, for example, transmits and receives various information with external devices such as servers via wired or wireless communication components. For example, the storage unit 803 may also store a program 803p received from an external device via the communication unit 806. The drive 807, for example, is capable of loading and unloading a removable storage medium 807m, such as a magnetic disk or optical disk. When the storage medium 807m is installed, the drive 807 transfers data between the storage medium 807m and the control unit 80. For example, the storage medium 807m storing the program 803p may be installed in the drive 807, and the program 803p may be read from the storage medium 807m and stored in the storage unit 803. Here, the storage medium 807m, for example, stores the program 803p and functions as a non-temporary storage medium readable by a computer.

圖10是概念性地示出了在控制部80中實現的功能的方塊圖。如圖10所示,控制部80例如與開閉驅動部16、升降部100、四個單獨閥Va、Vb、Vc、Vd、主閥Ve、真空泵32、供氣閥Vf、及壓力計70分別電連接。控制部80例如可參照從壓力計70輸出的測量值來對所述各部的動作進行控制。FIG10 is a block diagram conceptually illustrating the functions implemented in the control unit 80. As shown in FIG10 , the control unit 80 is electrically connected to, for example, the opening/closing actuator 16, the lifting unit 100, the four individual valves Va, Vb, Vc, and Vd, the main valve Ve, the vacuum pump 32, the air supply valve Vf, and the pressure gauge 70. The control unit 80 can control the operation of each of these components, for example, by referring to the measured values output from the pressure gauge 70.

如圖10中概念性地所示,控制部80例如具有開閉控制部81、升降控制部82、切換控制部83、排氣控制部84、泵控制部85、及供氣控制部86作為所實現的功能性結構。例如,開閉控制部81對開閉驅動部16的動作進行控制。例如,升降控制部82對升降部100的動作進行控制。例如,切換控制部83各別地控制四個單獨閥Va、Vb、Vc、Vd的開閉狀態。例如,排氣控制部84對主閥Ve的開閉狀態及開度進行控制。例如,泵控制部85對真空泵32的動作進行控制。例如,供氣控制部86對供氣閥Vf的開閉狀態進行控制。控制部80的各部的功能例如是通過處理器801進行按照所述程序803p等的運算處理來實現。As conceptually shown in FIG10 , the control unit 80 includes, for example, an opening/closing control unit 81, a lifting control unit 82, a switching control unit 83, an exhaust control unit 84, a pump control unit 85, and an air supply control unit 86 as functional structures implemented. For example, the opening/closing control unit 81 controls the operation of the opening/closing drive unit 16. For example, the lifting control unit 82 controls the operation of the lifting unit 100. For example, the switching control unit 83 controls the opening/closing states of the four individual valves Va, Vb, Vc, and Vd, respectively. For example, the exhaust control unit 84 controls the opening/closing state and opening degree of the main valve Ve. For example, the pump control unit 85 controls the operation of the vacuum pump 32. For example, the air supply control unit 86 controls the opening/closing state of the air supply valve Vf. The functions of the various components of the control unit 80 are realized by, for example, the processor 801 performing arithmetic processing according to the program 803p and the like.

<2.減壓乾燥處理> 接著,對使用了減壓乾燥裝置1的基板9的減壓乾燥處理進行說明。圖11是表示一實施方式的減壓乾燥處理的流程的一例的流程圖。所述減壓乾燥處理的流程例如是通過在控制部80中所包含的處理器801中執行程序803p來實現。此處,例如,按照所述順序進行圖11的步驟S1至步驟S4的處理。 <2. Reduced Pressure Drying Process> Next, the reduced pressure drying process of substrate 9 using reduced pressure drying apparatus 1 will be described. Figure 11 is a flow chart showing an example of a reduced pressure drying process flow according to one embodiment. This reduced pressure drying process flow is implemented, for example, by executing program 803p in processor 801 included in control unit 80. Here, for example, steps S1 through S4 in Figure 11 are performed in the order described.

在使用減壓乾燥裝置1進行減壓乾燥處理時,例如,首先,將基板9搬入至腔室10內(步驟S1)。此時,處於在基板9的上表面形成有未乾燥的塗布膜90的狀態。在步驟S1中,例如,閘門部15在控制部80的控制下將搬入搬出口14打開,省略了圖示的搬送機器人在將基板9載置於叉子狀的機械手的同時,經由腔室10的搬入搬出口14將基板9搬入至腔室10的內部空間10s。在此時間點,支撐部20例如配置於下降位置H1。搬送機器人例如在將叉子狀的機械手插入至支撐部20的多個支撐板21之間的同時,將基板9載置於支撐部20上,其後,使叉子退避至腔室10的外部。然後,閘門部15在控制部80的控制下將搬入搬出口14關閉。如以上所述,在步驟S1中,進行將基板9載置於腔室10內所配置的多個支撐銷22的步驟(也稱為載置步驟)。When performing a reduced-pressure drying process using the reduced-pressure drying apparatus 1, for example, a substrate 9 is first loaded into the chamber 10 (step S1). At this point, an undried coating film 90 is already formed on the upper surface of the substrate 9. In step S1, for example, the gate portion 15 opens the loading/unloading port 14 under the control of the control unit 80. A transport robot (not shown) simultaneously places the substrate 9 on a fork-shaped manipulator and simultaneously loads the substrate 9 into the chamber 10's interior space via the loading/unloading port 14 for 10 seconds. At this point, the support unit 20 is, for example, positioned at the lowered position H1. The transfer robot, for example, inserts its fork-shaped hand between the plurality of support plates 21 of the support portion 20, places the substrate 9 on the support portion 20, and then retracts the fork outside the chamber 10. The gate portion 15 then closes the loading/unloading port 14 under the control of the control unit 80. As described above, in step S1, the substrate 9 is placed on the plurality of support pins 22 arranged in the chamber 10 (also referred to as a placement step).

在所述步驟S1中,基板9由多個支撐銷22支撐。具體而言,基板9的周緣區域B1由第一支撐銷22a支撐,基板9的內側區域B2中的塗布區域A1由第二支撐銷22b支撐。另外,基板9的內側區域B2中的非塗布區域A2由第一支撐銷22a支撐。In step S1, the substrate 9 is supported by a plurality of support pins 22. Specifically, the peripheral area B1 of the substrate 9 is supported by the first support pins 22a, while the coated area A1 within the inner area B2 of the substrate 9 is supported by the second support pins 22b. Furthermore, the non-coated area A2 within the inner area B2 of the substrate 9 is supported by the first support pins 22a.

接著,減壓乾燥裝置1將腔室10內的氣體排出(步驟S2)。具體而言,控制部80通過使排氣部30將腔室10內的氣體排出,使腔室10內減壓。換言之,在步驟S2中,進行使腔室10內減壓的步驟(也稱為排氣步驟)。通過所述排氣步驟,腔室10內的氣壓下降至目標氣壓。Next, the decompression drying apparatus 1 exhausts the gas within the chamber 10 (step S2). Specifically, the control unit 80 instructs the exhaust unit 30 to exhaust the gas within the chamber 10, thereby reducing the pressure within the chamber 10. In other words, in step S2, the decompression step (also called the exhaust step) within the chamber 10 is performed. Through this exhaust step, the pressure within the chamber 10 drops to the target pressure.

在步驟S2中,例如,控制部80可使支撐部20適宜升降,也可各別地適宜對多個單獨閥Va、Vb、Vc、Vd各自的開閉狀態進行控制,也可適宜對主閥Ve的開度進行控制。例如,減壓乾燥裝置1也可在排氣步驟的初期,在使支撐部20向上升位置H2移動的狀態下緩慢地將腔室10內的氣體排出(第一處理),其後,在使支撐部20移動至下降位置H1後,排氣部30急劇地將腔室10內的氣體排出(第二處理)。由此,可在抑制在腔室10內的基板9的周圍產生強氣流的同時,對腔室10內進行減壓。In step S2, for example, the control unit 80 may appropriately raise or lower the support unit 20, individually and appropriately control the opening and closing states of the multiple individual valves Va, Vb, Vc, and Vd, or appropriately control the opening degree of the main valve Ve. For example, the decompression drying apparatus 1 may initially exhaust the gas within the chamber 10 while moving the support unit 20 to the raised position H2 (a first process). Subsequently, after the support unit 20 is moved to the lowered position H1, the exhaust unit 30 rapidly exhausts the gas within the chamber 10 (a second process). This allows the pressure within the chamber 10 to be reduced while suppressing the generation of strong airflow around the substrate 9 within the chamber 10.

其後,排氣部30以腔室10內的氣壓為目標氣壓且大致恒定的方式將腔室10內的氣體排出(第三處理)。當氣壓達到目標氣壓時,塗布膜90的溶劑沸騰而塗布膜90的乾燥以更高的速度進行。當塗布膜90的沸騰結束時,排氣部30也可對腔室10內進一步進行減壓(第四處理)。由此,可更可靠地使塗布膜90乾燥。The exhaust unit 30 then exhausts the gas within the chamber 10 to a target pressure, maintaining a substantially constant pressure (the third process). When the pressure reaches the target pressure, the solvent in the coating film 90 boils away, accelerating the drying of the coating film 90. Once the boiling of the coating film 90 has ceased, the exhaust unit 30 can further reduce the pressure within the chamber 10 (the fourth process). This allows for more reliable drying of the coating film 90.

另外,由於腔室10內的氣體的排出,腔室10內的氣體的溫度急劇地下降,並且腔室10內的各物體的溫度也在一定程度上下降。因此,如上所述,在腔室10內的第一支撐銷22a的周圍及第二支撐銷22b的周圍分別產生上升氣流Ga及上升氣流Gb。但是,上升氣流Gb的產生量比上升氣流Ga小,因此因上升氣流Gb而產生的基板9的塗布區域A1的溫度分佈的偏差小。因此,可抑制由基板9的溫度分佈的偏差引起的乾燥不均的產生。Furthermore, the exhaust of gas from chamber 10 causes the temperature of the gas within chamber 10 to drop dramatically, and the temperature of the objects within chamber 10 also drops to a certain extent. Therefore, as described above, upward airflows Ga and Gb are generated around the first support pins 22a and the second support pins 22b within chamber 10, respectively. However, the amount of upward airflow Gb generated is smaller than that of upward airflow Ga, so the temperature distribution of coating area A1 of substrate 9 caused by upward airflow Gb is less skewed. Consequently, the occurrence of uneven drying caused by variations in the temperature distribution of substrate 9 can be suppressed.

此外,在所述排氣步驟中,通過基板9的上表面與頂板部13之間的氣流,控制部80可能產生塗布膜90的乾燥不均。為了抑制所述乾燥不均的產生,也可在第一處理至第三處理各者中依次切換四個單獨閥Va、Vb、Vc、Vd的開閉狀態。例如,切換控制部83將四個單獨閥Va、Vb、Vc、Vd中的一個單獨閥關閉,並且將其他的單獨閥打開。而且,切換控制部83依次變更關閉的一個單獨閥。具體而言,依次切換將一個單獨閥Va關閉並將其他三個單獨閥Vb、Vc、Vd打開的第一狀態、將一個單獨閥Vb關閉並將其他三個單獨閥Va、Vc、Vd打開的第二狀態、將一個單獨閥Vc關閉並將其他三個單獨閥Va、Vb、Vd打開的第三狀態、以及將一個單獨閥Vd關閉並將其他三個單獨閥Va、Vb、Vc打開的第四狀態。若如此,則在排氣步驟中,形成於基板9的上表面與頂板部13之間的空間的氣流的方向根據單獨閥Va、單獨閥Vb、單獨閥Vc、單獨閥Vd的切換而變化。因此,可使基板9的上表面的塗布膜90更均勻地乾燥。另一方面,在第四處理中,由於溶劑的蒸發不活躍,因此也可將四個單獨閥Va、Vb、Vc、Vd全部打開。Furthermore, during the exhaust step, the control unit 80 may cause uneven drying of the coating film 90 due to the airflow between the upper surface of the substrate 9 and the top plate portion 13. To prevent this uneven drying, the open and closed states of the four individual valves Va, Vb, Vc, and Vd may be sequentially switched in each of the first through third processes. For example, the switching control unit 83 may close one of the four individual valves Va, Vb, Vc, and Vd and open the other individual valves. Furthermore, the switching control unit 83 sequentially changes the closed individual valve. Specifically, the system switches sequentially between a first state in which one individual valve Va is closed and the other three individual valves Vb, Vc, and Vd are opened; a second state in which one individual valve Vb is closed and the other three individual valves Va, Vc, and Vd are opened; a third state in which one individual valve Vc is closed and the other three individual valves Va, Vb, and Vd are opened; and a fourth state in which one individual valve Vd is closed and the other three individual valves Va, Vb, and Vc are opened. In this manner, during the exhaust step, the direction of the airflow in the space formed between the upper surface of the base plate 9 and the top plate portion 13 changes according to the switching of the individual valves Va, Vb, Vc, and Vd. Therefore, the coating film 90 on the upper surface of the substrate 9 can be dried more uniformly. On the other hand, in the fourth process, since the evaporation of the solvent is not active, all four individual valves Va, Vb, Vc, and Vd can be opened.

接著,控制部80將供氣閥Vf打開。由此,從供氣源62穿過供氣配管61及供氣口16f而向腔室10的內部空間10s供給氣體(步驟S3)。由此,腔室10內的氣壓再次上升至大氣壓。Next, the control unit 80 opens the air supply valve Vf. This causes gas to be supplied from the air supply source 62 through the air supply pipe 61 and the air supply port 16f into the internal space 10s of the chamber 10 (step S3). As a result, the air pressure in the chamber 10 rises back to atmospheric pressure.

然後,例如,最後將基板9從腔室10內搬出(步驟S4)。在步驟S4中,例如,首先,閘門部15在控制部80的控制下將搬入搬出口14打開,省略了圖示的搬送機器人經由腔室10的搬入搬出口14將載置於支撐部20的乾燥完畢的基板9搬出至腔室10的外部。由此,能夠結束對一片基板9的減壓乾燥處理。Then, for example, the substrate 9 is finally unloaded from the chamber 10 (step S4). In step S4, for example, the gate portion 15 first opens the loading/unloading port 14 under the control of the control unit 80. A transport robot (not shown) then unloads the dried substrate 9 placed on the support portion 20 out of the chamber 10 through the loading/unloading port 14 of the chamber 10. This completes the decompression drying process for one substrate 9.

如此,使用減壓乾燥裝置1使形成於作為基板9的上表面的第一面F1的塗布膜90乾燥的方法(也稱為減壓乾燥方法)例如具有載置步驟以及排氣步驟。Thus, a method of drying the coating film 90 formed on the first surface F1 serving as the upper surface of the substrate 9 using the reduced pressure drying apparatus 1 (also referred to as a reduced pressure drying method) includes, for example, a placement step and an exhaust step.

如以上所述,在一實施方式的減壓乾燥裝置1中,在步驟S1中,在第一支撐銷22a及第二支撐銷22b上載置基板9。第一支撐銷22a比第二支撐銷22b粗,在圖8的例子中,若干第一支撐銷22a支撐基板9的周緣區域B1,第二支撐銷22b支撐基板9的內側區域B2中的塗布區域A1。粗的第一支撐銷22a支撐基板9的周緣區域B1,因此,例如在排氣步驟中,即使由於氣流而向基板9施加水平方向成分的外力,也可更可靠地抑制基板9的水平方向上的位移。As described above, in the reduced-pressure drying apparatus 1 of one embodiment, in step S1, the substrate 9 is placed on the first support pins 22a and the second support pins 22b. The first support pins 22a are thicker than the second support pins 22b. In the example shown in FIG8 , a plurality of the first support pins 22a support the peripheral area B1 of the substrate 9, while the second support pins 22b support the coating area A1 within the inner area B2 of the substrate 9. The thick first support pins 22a support the peripheral area B1 of the substrate 9. Therefore, even if a horizontal component of external force is applied to the substrate 9 by the airflow during the exhaust step, horizontal displacement of the substrate 9 can be more reliably suppressed.

另一方面,在排氣步驟中產生的第一支撐銷22a周圍的上升氣流Ga的產生量比較大。因此,能夠使周緣區域B1的溫度分佈的均勻性下降。然而,在周緣區域B1未形成塗布膜90,因此幾乎不會導致乾燥不均的產生。On the other hand, the amount of rising airflow Ga generated around the first support pin 22a during the exhaust step is relatively large. Therefore, the uniformity of the temperature distribution in the peripheral area B1 can be reduced. However, since the coating film 90 is not formed in the peripheral area B1, there is little chance of uneven drying.

支撐基板9的塗布區域A1的第二支撐銷22b細,因此可減少在排氣步驟中產生的第二支撐銷22b周圍的上升氣流Gb的產生量。因此,可抑制上升氣流Gb向基板9的塗布區域A1的下表面供給氣體。因此,可減少塗布區域A1中的溫度分佈的偏差量,可抑制對塗布膜90產生乾燥不均。The thin second support pins 22b supporting the coating area A1 of the substrate 9 can reduce the amount of upward airflow Gb generated around the second support pins 22b during the exhaust step. This prevents the upward airflow Gb from supplying gas to the lower surface of the coating area A1 of the substrate 9. This reduces temperature variations in the coating area A1 and prevents uneven drying of the coating film 90.

如以上所述,根據一實施方式的減壓乾燥裝置1,可兼顧基板9的水平方向上的位移的抑制與塗布區域A1中的溫度分佈的偏差的抑制。As described above, according to the reduced pressure drying apparatus 1 of one embodiment, it is possible to achieve both suppression of horizontal displacement of the substrate 9 and suppression of variations in temperature distribution in the coating area A1.

另外,在圖8的例子中,基板9的內側區域B2中的非塗布區域A2由粗的第一支撐銷22a支撐。據此,可更牢固地支撐基板9。8, the non-coated area A2 in the inner area B2 of the substrate 9 is supported by the thick first support pins 22a. This allows the substrate 9 to be supported more firmly.

<<支撐銷的根數>> 如上所述,可通過粗的第一支撐銷22a抑制基板9的水平方向上的位移。因此,關於第二支撐銷22b,可僅考慮壓曲方向的強度來決定第二支撐銷22b的根數。例如,支撐銷22的壓曲荷重Pcr可由以下的式子表示。 <<Number of Support Pins>> As described above, the thick first support pins 22a can suppress horizontal displacement of the substrate 9. Therefore, the number of second support pins 22b can be determined by considering only the strength in the buckling direction. For example, the buckling load Pcr of the support pins 22 can be expressed by the following equation.

[數1] ···(1) [Number 1] ···(1)

此處,E表示楊氏模量,Imin表示剖面二次力矩的最小值,L表示支撐銷22的長度。Here, E represents Young's modulus, Imin represents the minimum value of the secondary moment of section, and L represents the length of the support pin 22.

例如,在直徑為0.5 mm、楊氏模量為4300 Mpa、支撐銷22的長度為30 mm的情況下,壓曲荷重Pcr為約0.29 N。只要對每一根第二支撐銷22b施加的基板9的重量為壓曲荷重Pcr以下即可,因此為了支撐厚度為0.5 mm、比重為3 g/cm 3的基板9,每130 mm需要一根第二支撐銷22b。 For example, when the diameter is 0.5 mm, the Young's modulus is 4300 MPa, and the length of the support pin 22 is 30 mm, the buckling load Pcr is approximately 0.29 N. As long as the weight of the substrate 9 applied to each second support pin 22b is less than the buckling load Pcr, it is sufficient. Therefore, to support a substrate 9 with a thickness of 0.5 mm and a specific gravity of 3 g/ cm3 , one second support pin 22b is required for every 130 mm.

<<支撐銷的排列例>> 在圖8的例子中,第一支撐銷22a與基板9的非塗布區域A2的下表面抵接,第二支撐銷22b與基板9的塗布區域A1的下表面抵接。也可以說塗布區域A1是用來形成元件的元件區域,因此也可以說第一支撐銷22a與基板9的非元件區域的下表面抵接,第二支撐銷22b與基板9的元件區域抵接。然而,未必限於此。 <<Example of Support Pin Arrangement>> In the example shown in Figure 8, the first support pin 22a abuts the bottom surface of the non-coated area A2 of the substrate 9, while the second support pin 22b abuts the bottom surface of the coated area A1 of the substrate 9. Coated area A1 can also be considered the device area where the device is formed, so the first support pin 22a abuts the bottom surface of the non-device area of the substrate 9, while the second support pin 22b abuts the device area of the substrate 9. However, this is not necessarily the case.

圖12是表示基板9與第一支撐銷22a及第二支撐銷22b的位置關係的第二例的圖。在圖12的例子中,所有的第一支撐銷22a與基板9的周緣區域B1的下表面抵接,所有的第二支撐銷22b與基板9的內側區域B2的下表面抵接。相反地,所有的第一支撐銷22a不與基板9的內側區域B2的下表面抵接,而是避開基板9的內側區域B2而設置。同樣地,所有的第二支撐銷22b不與基板9的周緣區域B1的下表面抵接,而是避開基板9的周緣區域B1而設置。Figure 12 shows a second example of the positional relationship between the substrate 9 and the first and second support pins 22a, 22b. In the example of Figure 12, all first support pins 22a abut against the lower surface of the peripheral area B1 of the substrate 9, while all second support pins 22b abut against the lower surface of the inner area B2 of the substrate 9. Conversely, all first support pins 22a avoid the lower surface of the inner area B2 of the substrate 9, rather than abut against it. Similarly, all second support pins 22b avoid the lower surface of the peripheral area B1 of the substrate 9, rather than abut against it.

據此,粗的第一支撐銷22a不位於基板9的內側區域B2的正下方。因此,即使在基板9的內側區域B2中變更塗布區域A1的個數、位置及形狀,基板9的塗布區域A1也僅由細的第二支撐銷22b支撐。因此,基板9中的形成有塗布膜90的區域僅由第二支撐銷22b支撐。因此,即使變更塗布區域A1的個數、位置及形狀,也可抑制對塗布膜90產生乾燥不均。As a result, the thick first support pins 22a are not located directly below the inner area B2 of the substrate 9. Therefore, even if the number, position, and shape of the coating areas A1 within the inner area B2 of the substrate 9 are changed, the coating areas A1 of the substrate 9 are supported only by the thin second support pins 22b. Consequently, the area of the substrate 9 where the coating film 90 is formed is supported only by the second support pins 22b. Consequently, even if the number, position, and shape of the coating areas A1 are changed, uneven drying of the coating film 90 can be suppressed.

<<支撐銷22與基板9的接觸面積>> 第一支撐銷22a的上端與作為基板9的下表面的第二面F2的第一接觸面積、和第二支撐銷22b的上端與基板9的第二面F2的第二接觸面積的大小關係並無特別限定。但是,關於支撐基板9的周緣區域B1的第一支撐銷22a的第一接觸面積也可比第二接觸面積大。 <<Contact Area between Support Pin 22 and Substrate 9>> The relationship between the first contact area between the upper end of the first support pin 22a and the second surface F2 (the lower surface of the substrate 9) and the second contact area between the upper end of the second support pin 22b and the second surface F2 of the substrate 9 is not particularly limited. However, the first contact area of the first support pin 22a in the peripheral area B1 supporting the substrate 9 may be larger than the second contact area.

據此,可使第一支撐銷22a與基板9的周緣區域B1之間的摩擦力比第二支撐銷22b與基板9之間的摩擦力大。因此,更粗的第一支撐銷22a可減少基板9的水平方向上的偏移量。另一方面,若第一接觸面積大,則在第一支撐銷22a與基板9之間移動的熱量比較大。然而,這些第一支撐銷22a支撐基板9的周緣區域B1(即非塗布區域A2),因此不易導致基板9的塗布區域A1中的溫度分佈的偏差。This allows the frictional force between the first support pins 22a and the peripheral area B1 of the substrate 9 to be greater than the frictional force between the second support pins 22b and the substrate 9. Therefore, thicker first support pins 22a can reduce the amount of horizontal displacement of the substrate 9. On the other hand, a larger first contact area results in a greater amount of heat transferred between the first support pins 22a and the substrate 9. However, since these first support pins 22a support the peripheral area B1 of the substrate 9 (i.e., the non-coated area A2), they are less likely to cause temperature deviations in the coated area A1 of the substrate 9.

第二支撐銷22b與基板9的第二接觸面積比第一支撐銷22a與基板9的第二接觸面積小,因此可減少在第二支撐銷22b與基板9之間移動的熱量。雖然第二支撐銷22b支撐基板9的塗布區域A1,但是由於第二支撐銷22b與基板9之間的熱的移動量小,因此可抑制塗布區域A1的溫度分佈的偏差。因此,可抑制對塗布膜90產生乾燥不均。The second contact area between the second support pins 22b and the substrate 9 is smaller than the second contact area between the first support pins 22a and the substrate 9. This reduces the amount of heat transferred between the second support pins 22b and the substrate 9. Although the second support pins 22b support the coating area A1 of the substrate 9, the reduced amount of heat transferred between the second support pins 22b and the substrate 9 suppresses temperature variations in the coating area A1. Consequently, uneven drying of the coating film 90 is minimized.

<<支撐銷22的間距>> 接著,對第一支撐銷22a彼此的間距及第二支撐銷22b彼此的間距進行說明。圖13是表示基板9與第一支撐銷22a及第二支撐銷22b的位置關係的第三例的圖。在圖13的例子中,第一支撐銷22a彼此的間距比第二支撐銷22b彼此的間距寬。 << Spacing Between Support Pins 22 >> Next, the spacing between the first support pins 22a and the spacing between the second support pins 22b will be described. Figure 13 shows a third example of the positional relationship between the substrate 9 and the first and second support pins 22a, 22b. In the example of Figure 13 , the spacing between the first support pins 22a is wider than the spacing between the second support pins 22b.

第一支撐銷22a比第二支撐銷22b粗,因此即使將第一支撐銷22a彼此的間距設定得比第二支撐銷22b彼此的間距寬,也可適當地支撐基板9。相反地,在可抑制基板9的水平方向上的位移的同時適當地支撐基板9的程度的範圍內,可將第一支撐銷22a的間距設定得比第二支撐銷22b的間距寬。The first support pins 22a are thicker than the second support pins 22b. Therefore, even if the spacing between the first support pins 22a is set wider than the spacing between the second support pins 22b, the substrate 9 can still be properly supported. Conversely, the spacing between the first support pins 22a can be set wider than the spacing between the second support pins 22b, as long as the substrate 9 can be properly supported while suppressing horizontal displacement of the substrate 9.

據此,可減少第一支撐銷22a的根數,可減少減壓乾燥裝置1的製造成本。另外,支撐銷22的上端能夠因與基板9的接觸而磨損。即,支撐銷22為消耗品,因此需要更換支撐銷22,但支撐銷22的根數越少,越可減少支撐銷22的更換作業的工時。This reduces the number of first support pins 22a, thereby reducing the manufacturing cost of the pressure-reducing drying apparatus 1. Furthermore, the upper ends of the support pins 22 can wear out due to contact with the substrate 9. In other words, the support pins 22 are consumable and therefore require replacement. However, the fewer the number of support pins 22, the less time is required to replace the support pins 22.

<<支撐銷22的材質>> 第二支撐銷22b例如可由多孔質樹脂形成。此處提及的所謂多孔質樹脂是指樹脂內部包含多個的細孔的結構。此種多孔質樹脂例如能夠通過超臨界發泡成形等發泡成形來製造。對於樹脂,例如能夠應用聚丙烯。形成於樹脂內部的細孔的直徑的平均值例如可為幾nm以上,也可為幾十μm以下。 <<Material of Support Pin 22>> The second support pin 22b can be formed, for example, from a porous resin. The term "porous resin" herein refers to a resin having a structure containing numerous fine pores. Such porous resins can be manufactured, for example, by foam molding, such as supercritical foaming. Polypropylene, for example, can be used as the resin. The average diameter of the fine pores formed within the resin can range from several nanometers to several tens of micrometers or less.

此種第二支撐銷22b的導熱率比較低。其原因在於:細孔內的氣體與樹脂相比不易傳遞熱,因此第二支撐銷22b內的熱的移動被多個細孔阻礙。第二支撐銷22b的導熱率例如也可為0.12 W/m·K以下。The thermal conductivity of this second support pin 22b is relatively low. This is because the gas within the pores transfers heat less readily than resin, hindering the movement of heat within the second support pin 22b due to the numerous pores. The thermal conductivity of the second support pin 22b can be, for example, 0.12 W/m·K or less.

若第二支撐銷22b的導熱率小,則可減少經過第二支撐銷22b與基板9的內側區域B2的接觸部位而在第二支撐銷22b與基板9之間移動的熱量。因此,可進一步提高基板9的溫度的均勻性。因此,可進一步抑制形成於基板9的塗布區域A1的塗布膜90的乾燥不均。If the thermal conductivity of the second support pin 22b is low, the amount of heat transferred between the second support pin 22b and the substrate 9 through the contact area between the second support pin 22b and the inner area B2 of the substrate 9 can be reduced. Consequently, the temperature uniformity of the substrate 9 can be further improved. Consequently, the drying unevenness of the coating film 90 formed on the coating area A1 of the substrate 9 can be further suppressed.

此外,第二支撐銷22b的整體無需由多孔質樹脂形成,例如只要第二支撐銷22b中的至少第二抵接部23b由多孔質樹脂形成即可。例如,第二抵接部23b可由多孔質樹脂形成,第二柱狀部25b也可由非多孔質樹脂形成。由此,也可減少在第二支撐銷22b與基板9之間移動的熱量。當然,當第二支撐銷22b的整體由多孔質樹脂形成時,可進一步減少熱的移動。Furthermore, the entire second support pin 22b does not need to be made of a porous resin. For example, it is sufficient for at least the second contact portion 23b of the second support pin 22b to be made of a porous resin. For example, the second contact portion 23b can be made of a porous resin, while the second columnar portion 25b can be made of a non-porous resin. This can also reduce the amount of heat transferred between the second support pin 22b and the substrate 9. Of course, when the entire second support pin 22b is made of a porous resin, heat transfer can be further reduced.

第一支撐銷22a也可與第二支撐銷22b同樣地由多孔質樹脂形成。據此,可減少經過第一支撐銷22a與基板9的周緣區域B1的接觸部位而在第一支撐銷22a與基板9之間移動的熱量。因此,可減少基板9的周緣區域B1的溫度分佈的偏差量。進而,可減少基板9的周緣區域B1與內側區域B2之間的溫度差,可減少周緣區域B1與內側區域B2之間的熱的移動。因此,可抑制或避免內側區域B2中的端部分中的溫度分佈的偏差的增大。The first support pin 22a can also be formed of a porous resin, similar to the second support pin 22b. This reduces the amount of heat transferred between the first support pin 22a and the substrate 9 through the contact area between the first support pin 22a and the peripheral area B1 of the substrate 9. Consequently, the deviation in the temperature distribution of the peripheral area B1 of the substrate 9 can be reduced. Furthermore, the temperature difference between the peripheral area B1 and the inner area B2 of the substrate 9 can be reduced, thereby reducing the transfer of heat between the peripheral area B1 and the inner area B2. Consequently, the increase in deviation in the temperature distribution at the end portion of the inner area B2 can be suppressed or avoided.

<3.變形例> 本公開並不限定於所述一實施方式,能夠在不脫離本公開的主旨的範圍內進行各種變更及改良等。 <3. Modifications> This disclosure is not limited to the single embodiment described above, and various modifications and improvements are possible without departing from the spirit of this disclosure.

在所述一實施方式中,只要支撐基板9的周緣區域B1的兩個以上的支撐銷22中的至少一個為第一支撐銷22a即可。換言之,支撐基板9的周緣區域B1的兩個以上的支撐銷22中的若干可為第二支撐銷22b。總之,支撐基板9的周緣區域B1的兩個以上的支撐銷22也可包含第一支撐銷22a及第二支撐銷22b此兩者。若一個以上的粗的第一支撐銷22a支撐基板9的周緣區域B1,則可抑制基板9的水平方向上的位移。此外,理想的是支撐周緣區域B1的支撐銷22中的至少半數以上為第一支撐銷22a。In the embodiment described above, at least one of the two or more support pins 22 supporting the peripheral area B1 of the substrate 9 is sufficient as the first support pin 22a. In other words, some of the two or more support pins 22 supporting the peripheral area B1 of the substrate 9 may be the second support pins 22b. In short, the two or more support pins 22 supporting the peripheral area B1 of the substrate 9 may include both the first support pins 22a and the second support pins 22b. If one or more thick first support pins 22a support the peripheral area B1 of the substrate 9, horizontal displacement of the substrate 9 can be suppressed. Furthermore, it is ideal that at least half of the support pins 22 supporting the peripheral area B1 are first support pins 22a.

另外,只要支撐基板9的塗布區域A1的兩個以上的支撐銷22中的至少一個為第二支撐銷22b即可。換言之,支撐基板9的塗布區域A1的兩個以上的支撐銷22中的若干也可為第一支撐銷22a。若一個以上的細的第二支撐銷22b支撐基板9的塗布區域A1,則與僅第一支撐銷22a支撐塗布區域A1的結構相比,可減少塗布區域A1的溫度分佈的偏差量。此外,理想的是支撐周緣區域B1的支撐銷22中的至少一半以上為第二支撐銷22b。Furthermore, it is sufficient that at least one of the two or more support pins 22 supporting the coating area A1 of the substrate 9 is the second support pin 22b. In other words, some of the two or more support pins 22 supporting the coating area A1 of the substrate 9 may be the first support pins 22a. If one or more thin second support pins 22b support the coating area A1 of the substrate 9, the deviation in the temperature distribution in the coating area A1 can be reduced compared to a structure in which only the first support pins 22a support the coating area A1. Furthermore, it is ideal that at least half of the support pins 22 supporting the peripheral area B1 are second support pins 22b.

另外,塗布膜90也可形成於基板9中的除周緣區域B1以外的整個面。Alternatively, the coating film 90 may be formed on the entire surface of the substrate 9 except for the peripheral area B1.

在所述一實施方式中,也可不存在使支撐部20升降的升降部100。在此情況下,多個支撐銷22也可固定於底面整流板40的上表面等腔室10內的部分或者底板部11的上表面等腔室10。In the embodiment described above, the lifting portion 100 for lifting the support portion 20 may not be present. In this case, the plurality of support pins 22 may be fixed to a portion within the chamber 10 such as the upper surface of the bottom straightening plate 40 or to the chamber 10 such as the upper surface of the bottom plate 11.

在所述一實施方式中,例如腔室10具有四個排氣口16a、16b、16c、16d,但並不限於此。例如,腔室10所具有的排氣口的數量也可為一個至三個及五個以上的任一者。另外,例如也可無單獨閥Va、單獨閥Vb、單獨閥Vc、單獨閥Vd。In the embodiment described above, for example, chamber 10 has four exhaust ports 16a, 16b, 16c, and 16d, but this is not limiting. For example, chamber 10 may have any number of exhaust ports, from one to three, or even five or more. Furthermore, for example, separate valves Va, Vb, Vc, and Vd may not be present.

在所述一實施方式中,減壓乾燥裝置1通過減壓使基板9上的塗布膜90乾燥,但並不限於此。例如,減壓乾燥裝置1也可通過減壓及加熱使基板9上的塗布膜90乾燥。In the embodiment described above, the reduced pressure drying device 1 dries the coating film 90 on the substrate 9 by reducing pressure, but the present invention is not limited thereto. For example, the reduced pressure drying device 1 may also dry the coating film 90 on the substrate 9 by reducing pressure and applying heat.

在所述一實施方式中,在腔室10的側壁部12設置有基板9的搬入搬出口14,但並不限於此。例如,也可採用腔室10的四個側壁部12及頂板部13構成一體的蓋部,且所述蓋部可從底板部11分離而向上方退避的結構。在此情況下,例如,蓋部也可通過開閉驅動部16等而上下移動。而且,腔室10能夠選擇性地設定為蓋部經由O型環等密封材料與底板部11接觸而將內部空間10s密閉的狀態(密閉狀態)、以及蓋部從底板部11向上方分離而將內部空間10s打開的狀態(開放狀態)。此處,若腔室10處於開放狀態,則可進行基板9向腔室10的內部空間10s的搬入及基板9從腔室10的內部空間10s的搬出。若腔室10處於關閉狀態,則通過來自內部空間10s的排氣及向內部空間10s的供氣,可通過減壓而使基板9上的塗布膜90乾燥。In the embodiment described above, the sidewalls 12 of the chamber 10 are provided with a loading/unloading port 14 for the substrates 9, but the present invention is not limited thereto. For example, a structure may be employed in which the four sidewalls 12 and the top plate 13 of the chamber 10 form a single lid, and the lid can be separated from the bottom plate 11 and retracted upward. In this case, for example, the lid can be moved vertically by an opening/closing drive 16 or the like. Furthermore, the chamber 10 can be selectively configured to be in a state (a closed state) in which the lid contacts the bottom plate 11 via a sealing material such as an O-ring, thereby sealing the internal space 10s, and a state (an open state) in which the lid separates upward from the bottom plate 11, thereby opening the internal space 10s. Here, if the chamber 10 is in an open state, the substrate 9 can be loaded into and unloaded from the inner space 10s of the chamber 10. If the chamber 10 is in a closed state, the coating film 90 on the substrate 9 can be dried by exhausting air from and supplying air to the inner space 10s, thereby reducing the pressure.

在所述一實施方式中,例如,支撐部20可具有各種形態。例如,多個支撐板21也可為一體的一個支撐板21。In the embodiment, for example, the supporting portion 20 may have various shapes. For example, the plurality of supporting plates 21 may also be a single integrated supporting plate 21.

在所述一實施方式中,例如,可無底面整流板40,也可無側面整流板50。In the embodiment, for example, the bottom straightening plate 40 and the side straightening plate 50 may be omitted.

在所述一實施方式中,例如,減壓乾燥裝置1中的各種動作例如也可響應於用戶對輸入部804的動作或從外部的裝置對通信部806輸入的信號等而開始或結束。In the embodiment described above, for example, various operations in the reduced pressure drying apparatus 1 may be started or ended in response to a user's operation on the input unit 804 or a signal input from an external device to the communication unit 806.

在所述一實施方式中,例如,在控制部80中,所實現的功能性結構的至少一部分也可包括專用的電子電路等硬件。In the embodiment described above, for example, in the control unit 80, at least a portion of the functional structure implemented may include hardware such as dedicated electronic circuits.

此外,當然能夠將分別構成所述一實施方式及各種變形例的全部或一部分適宜在不矛盾的範圍內進行組合。Furthermore, it is of course possible to appropriately combine all or part of the embodiments and various modifications described above within a range that does not conflict.

1:減壓乾燥裝置 9:基板 9op:外周部(側面) 10:腔室 10s:內部空間 11:底板部 11h、40h:貫通孔 12:側壁部 13:頂板部 14:搬入搬出口 15:閘門部(閘閥) 16:開閉驅動部 16a、16b、16c、16d:排氣口 16f:供氣口 20:支撐部 21:支撐板 22:支撐銷 22a:第一支撐銷 22b:第二支撐銷 23a:第一抵接部 23b:第二抵接部 25a:第一柱狀部 25b:第二柱狀部 26a:第一台座部 26b:第二台座部 27a:第一外螺紋部 27b:第二外螺紋部 30:排氣部 31:排氣配管 31a、31b、31c、31d:單獨配管 31e:主配管 32:真空泵 40:底面整流板 41:對角線 50:側面整流板 60:供氣部 61:供氣配管 62:供氣源 70:壓力計 80:控制部 81:開閉控制部 82:升降控制部 83:切換控制部 84:排氣控制部 85:泵控制部 86:供氣控制部 90:塗布膜 100:升降部 100a:本體部 100b:移動部 801:處理器 802:記憶體 803:存儲部 803p:計算機程序(程序) 804:輸入部 805:輸出部 806:通信部 807:驅動器 807m:存儲介質 A1:區域(被形成區域、塗布區域) A2:區域(非塗布區域) A3:區域(被覆區域) A4:區域(露出區域) B1:周緣區域 B2:內側區域 B3:邊界 F1:第一面 F2:第二面 Ga、Gb:上升氣流 H1:下降位置 H2:上升位置 S1~S4:步驟 Va、Vb、Vc、Vd:單獨閥 Ve:主閥 Vf:供氣閥 1: Decompression drying device 9: Substrate 9op: Periphery (side) 10: Chamber 10s: Internal space 11: Bottom plate 11h, 40h: Through-holes 12: Side wall 13: Top plate 14: Load/unload port 15: Gate (gate valve) 16: Open/close actuator 16a, 16b, 16c, 16d: Exhaust port 16f: Air supply port 20: Support 21: Support plate 22: Support pin 22a: First support pin 22b: Second support pin 23a: First contact portion 23b: Second contact portion 25a: First columnar portion 25b: Second columnar portion 26a: First pedestal portion 26b: Second pedestal portion 27a: First external threaded portion 27b: Second external threaded portion 30: Exhaust section 31: Exhaust piping 31a, 31b, 31c, 31d: Individual piping 31e: Main piping 32: Vacuum pump 40: Bottom straightener 41: Diagonal line 50: Side straightener 60: Air supply section 61: Air supply piping 62: Air supply source 70: Pressure gauge 80: Control section 81: Open/Close control section 82: Lift control section 83: Switching control section 84: Exhaust control section 85: Pump control section 86: Air supply control unit 90: Coating film 100: Lifting unit 100a: Main body 100b: Moving unit 801: Processor 802: Memory 803: Storage unit 803p: Computer program 804: Input unit 805: Output unit 806: Communication unit 807: Drive 807m: Storage medium A1: Area (formed area, coated area) A2: Area (uncoated area) A3: Area (coated area) A4: Area (exposed area) B1: Peripheral area B2: Inner area B3: Boundary F1: First surface F2: Second surface Ga, Gb: Upward airflow H1: Lowering position H2: Ascending position S1-S4: Steps Va, Vb, Vc, Vd: Individual valves Ve: Main valve Vf: Air supply valve

圖1是表示一實施方式的減壓乾燥裝置的縱剖面的一例的圖。 圖2是表示一實施方式的減壓乾燥裝置的橫剖面的一例的圖。 圖3是表示一實施方式的減壓乾燥裝置的縱剖面的一例的圖。 圖4是表示基板的一例的立體圖。 圖5是表示基板的一部分的縱剖面的一例的圖。 圖6是表示第一支撐銷的外觀的一例的正視圖。 圖7是表示第二支撐銷的外觀的一例的正視圖。 圖8是表示基板的塗布區域與第一支撐銷及第二支撐銷的關係的第一例的圖。 圖9是示意性地表示減壓下的腔室內的氣流的一例的圖。 圖10是概念性地示出了可在控制部中實現的功能的方塊圖。 圖11是表示一實施方式的減壓乾燥處理的流程的一例的流程圖。 圖12是表示基板的塗布區域與第一支撐銷及第二支撐銷的關係的第二例的圖。 圖13是表示基板的塗布區域與第一支撐銷及第二支撐銷的關係的第三例的圖。 Figure 1 is a diagram showing an example of a longitudinal cross-section of a reduced-pressure drying apparatus according to one embodiment. Figure 2 is a diagram showing an example of a transverse cross-section of a reduced-pressure drying apparatus according to one embodiment. Figure 3 is a diagram showing an example of a longitudinal cross-section of a reduced-pressure drying apparatus according to one embodiment. Figure 4 is a perspective view showing an example of a substrate. Figure 5 is a diagram showing an example of a longitudinal cross-section of a portion of a substrate. Figure 6 is a front view showing an example of the appearance of a first support pin. Figure 7 is a front view showing an example of the appearance of a second support pin. Figure 8 is a diagram showing a first example of the relationship between the coating area of a substrate and the first and second support pins. Figure 9 is a diagram schematically showing an example of airflow within a chamber under reduced pressure. Figure 10 is a block diagram conceptually illustrating functions that can be implemented in the control unit. Figure 11 is a flow chart illustrating an example of a reduced-pressure drying process according to one embodiment. Figure 12 is a diagram illustrating a second example of the relationship between the coating area of a substrate and the first and second support pins. Figure 13 is a diagram illustrating a third example of the relationship between the coating area of a substrate and the first and second support pins.

1:減壓乾燥裝置 1: Pressure reduction drying device

9:基板 9:Substrate

10:腔室 10: Chamber

10s:內部空間 10s: Interior space

11:底板部 11: Bottom plate

11h、40h:貫通孔 11h, 40h: Through hole

12:側壁部 12: Side wall part

13:頂板部 13: Top plate

14:搬入搬出口 14: Moving in and out

15:閘門部(閘閥) 15: Gate section (gate valve)

16:開閉驅動部 16: Open and close the drive unit

20:支撐部 20: Supporting part

21:支撐板 21: Support plate

22:支撐銷 22: Support pin

22a:第一支撐銷 22a: First support pin

22b:第二支撐銷 22b: Second support pin

40:底面整流板 40: Bottom rectifier plate

50:側面整流板 50: Side rectifier

100:升降部 100: Lifting unit

100a:本體部 100a: Main body

100b:移動部 100b: Moving part

H1:下降位置 H1: descending position

H2:上升位置 H2: Ascending position

Claims (5)

一種減壓乾燥裝置,使形成於基板的上表面的塗布膜乾燥,所述減壓乾燥裝置包括: 腔室,收容所述基板; 多個支撐銷,在所述腔室內從下方支撐所述基板;以及 排氣部,將所述腔室內的氣體排出, 所述多個支撐銷包含一個以上的第一支撐銷、以及比所述第一支撐銷細的一個以上的第二支撐銷, 所述第一支撐銷中的至少一個從下方支撐所述基板中的周緣區域, 所述第二支撐銷中的至少一個從下方支撐所述基板的比所述周緣區域更靠內側的內側區域中的形成有所述塗布膜的區域, 所述第一支撐銷包含等寬度的第一柱狀部, 所述第二支撐銷包含等寬度的第二柱狀部, 所述第一柱狀部的寬度與所述第二柱狀部的寬度之差為0.5 mm以上, 所述第二柱狀部相對於所述第二支撐銷的上下方向上所占的比例相較於所述第二支撐銷的其他部分所占的比例而言為最大。 A decompression drying device for drying a coating film formed on the upper surface of a substrate, the decompression drying device comprising: a chamber for accommodating the substrate; a plurality of support pins for supporting the substrate from below within the chamber; and an exhaust portion for exhausting gas within the chamber. The plurality of support pins include one or more first support pins and one or more second support pins thinner than the first support pins. At least one of the first support pins supports a peripheral region of the substrate from below. At least one of the second support pins supports a region of the substrate, which is located inward of the peripheral region and on which the coating film is formed, from below. The first support pins include first columnar portions of uniform width. The second support pin includes a second columnar portion of equal width. The difference between the width of the first columnar portion and the width of the second columnar portion is greater than 0.5 mm. The proportion of the second columnar portion in the vertical direction of the second support pin is the largest compared to the proportion of the remaining portion of the second support pin. 如請求項1所述的減壓乾燥裝置,其中, 所述基板的所述內側區域僅由所述第二支撐銷支撐。 The reduced-pressure drying device of claim 1, wherein: The inner region of the substrate is supported only by the second support pins. 如請求項1所述的減壓乾燥裝置,其中, 所述第一支撐銷中的至少另一個支撐所述基板的所述內側區域中的形成有所述塗布膜的所述區域以外的區域。 The reduced-pressure drying device according to claim 1, wherein: At least one of the first support pins supports an area of the inner region of the substrate other than the area where the coating film is formed. 如請求項1所述的減壓乾燥裝置,其中, 所述第一支撐銷與所述基板的接觸面積比所述第二支撐銷與所述基板的接觸面積大。 The reduced-pressure drying device of claim 1, wherein: The contact area between the first support pin and the substrate is larger than the contact area between the second support pin and the substrate. 如請求項1所述的減壓乾燥裝置,其中, 所述第二支撐銷由多孔質樹脂形成。 The reduced-pressure drying device according to claim 1, wherein: the second support pin is formed of a porous resin.
TW112117096A 2022-07-07 2023-05-09 Decompression drying device TWI890056B (en)

Applications Claiming Priority (2)

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JP2022109686A JP7536832B2 (en) 2022-07-07 2022-07-07 Reduced pressure drying device
JP2022-109686 2022-07-07

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TW202413869A TW202413869A (en) 2024-04-01
TWI890056B true TWI890056B (en) 2025-07-11

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118391881B (en) * 2024-07-01 2024-09-17 季华实验室 Vacuum drying system and control method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153369A (en) * 2006-12-15 2008-07-03 Chugai Ro Co Ltd Resist solution coating equipment
TW202135212A (en) * 2019-12-17 2021-09-16 日商東京威力科創股份有限公司 Decompression drying device and decompression drying method capable of improving uniformity of decompression drying processing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595783A (en) * 1995-02-22 1997-01-21 Northrop Grumman Corporation Spin coating fixture
JP2004233912A (en) 2003-02-03 2004-08-19 Nakan Corp Drying equipment for alignment coating layer of liquid crystal panel
WO2011030607A1 (en) 2009-09-10 2011-03-17 シャープ株式会社 Drying device
JP2013029259A (en) 2011-07-29 2013-02-07 Toray Eng Co Ltd Vacuum drying apparatus
CN106607320B (en) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 Thermal vacuum drying device suitable for flexible base board
JP7520696B2 (en) * 2020-11-13 2024-07-23 株式会社Screenホールディングス Reduced pressure drying device
JP7309294B2 (en) * 2020-11-30 2023-07-18 株式会社Screenホールディングス Vacuum dryer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153369A (en) * 2006-12-15 2008-07-03 Chugai Ro Co Ltd Resist solution coating equipment
TW202135212A (en) * 2019-12-17 2021-09-16 日商東京威力科創股份有限公司 Decompression drying device and decompression drying method capable of improving uniformity of decompression drying processing

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