TWI887936B - Crystal resonator - Google Patents
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- TWI887936B TWI887936B TW112151103A TW112151103A TWI887936B TW I887936 B TWI887936 B TW I887936B TW 112151103 A TW112151103 A TW 112151103A TW 112151103 A TW112151103 A TW 112151103A TW I887936 B TWI887936 B TW I887936B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
- H03H9/0509—Holders or supports for bulk acoustic wave devices consisting of adhesive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
- H03H9/0514—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
- H03H9/0207—Details relating to the vibration mode the vibration mode being harmonic
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
一種晶體共振器,包含一晶體片及一電極組。晶體片呈現為片狀且一體成形,並能夠被施加電壓而在一不平行於一厚度方向的運動方向上產生厚度剪切振盪。晶體片包括沿運動方向排列設置且相互連接的一第一振動部及一第二振動部。電極組包括一設置於第一振動部的第一對電極,及一設置於第二振動部的第二對電極。第一對電極與第二對電極分別對第一振動部與第二振動部施加極性相反的電壓,使第一振動部與第二振動部兩者所產生的厚度剪切振盪在運動方向上相向振動或背向振動。藉此,能讓第一振動部與第二振動部兩者受到外界干擾所引進的慣性力相互抵消,進而消除慣性力對晶體片所產生的加速度振動效應,以達到降低加速度靈敏度的效果。A crystal resonator includes a crystal sheet and an electrode group. The crystal sheet is in the form of a sheet and is formed integrally, and can be applied with a voltage to generate thickness shear oscillation in a movement direction that is not parallel to a thickness direction. The crystal sheet includes a first vibrating portion and a second vibrating portion arranged along the movement direction and connected to each other. The electrode group includes a first pair of electrodes arranged on the first vibrating portion, and a second pair of electrodes arranged on the second vibrating portion. The first pair of electrodes and the second pair of electrodes apply voltages of opposite polarity to the first vibrating portion and the second vibrating portion, respectively, so that the thickness shear oscillations generated by the first vibrating portion and the second vibrating portion vibrate in opposite directions or in opposite directions in the movement direction. In this way, the inertial forces caused by external interference on the first vibration part and the second vibration part can offset each other, thereby eliminating the acceleration vibration effect of the inertial force on the crystal piece, thereby achieving the effect of reducing the acceleration sensitivity.
Description
本發明是有關於一種共振器(resonator),特別是指一種晶體共振器。The present invention relates to a resonator, and in particular to a crystal resonator.
參閱圖1,為一種習知的晶體共振器1。該晶體共振器1適用於安裝於一共振電路(resonant circuit)中,並作為輸出特定振盪頻率訊號的電子元件使用。該晶體共振器1包含一晶體片11及一對分別設置於該晶體片11的厚度軸的兩端的電極12。該對電極12會分別被兩個導電膠塊13電連接地固定於該共振電路中。當該對電極12被通電而在該晶體片11的厚度軸的兩端產生一電壓差時,該晶體片11不平於厚度軸的兩晶面會分別朝相反的方向反復運動,而讓該晶體片11整體產生一固定頻率的振動,並藉此輸出特定振盪頻率訊號。然而,當該晶體共振器1受到外力作用而相對於外界環境傾斜、旋轉或晃動時,該晶體片11相當於被施加一慣性力,進而影響該晶體片11的振動,導致該晶體共振器1存在有頻移的問題。Referring to FIG. 1 , a known crystal resonator 1 is shown. The crystal resonator 1 is suitable for being installed in a resonant circuit and used as an electronic component that outputs a specific oscillation frequency signal. The crystal resonator 1 includes a crystal plate 11 and a pair of electrodes 12 respectively disposed at both ends of the thickness axis of the crystal plate 11. The pair of electrodes 12 are respectively electrically connected and fixed in the resonant circuit by two conductive adhesive blocks 13. When the pair of electrodes 12 is energized and a voltage difference is generated at both ends of the thickness axis of the crystal plate 11, the two crystal planes of the crystal plate 11 that are not parallel to the thickness axis will move repeatedly in opposite directions, causing the crystal plate 11 to vibrate at a fixed frequency as a whole, thereby outputting a specific vibration frequency signal. However, when the crystal resonator 1 is subjected to an external force and tilts, rotates or shakes relative to the external environment, the crystal plate 11 is equivalent to being applied with an inertial force, thereby affecting the vibration of the crystal plate 11, resulting in the problem of frequency shift in the crystal resonator 1.
因此,本發明的目的,即在提供一種加速度靈敏度(g-sensitivity)降低的晶體共振器。Therefore, an object of the present invention is to provide a crystal resonator with reduced acceleration sensitivity (g-sensitivity).
於是,本發明晶體共振器,包含一晶體片及一電極組。Therefore, the crystal resonator of the present invention includes a crystal plate and an electrode set.
該晶體片呈現為片狀且一體成形,並能夠被施加電壓而在一不平行於一厚度方向的運動方向上產生厚度剪切振盪。該晶體片包括沿該運動方向排列設置且相互連接的一第一振動部及一第二振動部。The crystal sheet is in the form of a sheet and is formed in one piece, and can generate thickness shear vibration in a movement direction not parallel to a thickness direction when a voltage is applied. The crystal sheet includes a first vibration part and a second vibration part arranged along the movement direction and connected to each other.
該電極組包括一設置於該第一振動部的第一對電極,及一設置於該第二振動部的第二對電極。該第一對電極與該第二對電極分別對該第一振動部與該第二振動部施加極性相反的電壓,使該第一振動部與該第二振動部兩者所產生的厚度剪切振盪在該運動方向上相向振動或背向振動。The electrode assembly includes a first pair of electrodes disposed on the first vibrating portion and a second pair of electrodes disposed on the second vibrating portion. The first pair of electrodes and the second pair of electrodes apply voltages of opposite polarity to the first vibrating portion and the second vibrating portion respectively, so that the thickness shear oscillations generated by the first vibrating portion and the second vibrating portion vibrate in opposite directions or in opposite directions in the movement direction.
在一些實施態樣中,該晶體片還包括二分別位於兩相反側的晶面。該等晶面平行於該運動方向且垂直於該厚度方向。該等晶面的形狀為矩形、正圓形與橢圓形的其中一種。In some embodiments, the wafer further includes two crystal planes located at two opposite sides. The crystal planes are parallel to the movement direction and perpendicular to the thickness direction. The shapes of the crystal planes are one of a rectangle, a perfect circle and an ellipse.
在一些實施態樣中,該晶體片呈現為圓片狀,並還包括一平行於該厚度方向的切面,該切面用以定義晶軸。In some embodiments, the wafer is in the shape of a disk and further includes a cut surface parallel to the thickness direction, wherein the cut surface is used to define a crystal axis.
在一些實施態樣中,該第一對電極具有分別設置於該第一振動部在該厚度方向上的兩相反面的一輸入端電極及一第一背電極。該輸入端電極與該第一背電極在該厚度方向上相互對準。該第二對電極具有分別設置於該第二振動部在該厚度方向上的兩相反面的一輸出端電極及一第二背電極。該輸出端電極與該第二背電極在該厚度方向上相互對準。該輸入端電極與該輸出端電極位於該晶體片的同一側且在該運動方向上間隔設置。該輸入端電極與該輸出端電極的其中一者為高電位電極。該輸入端電極與該輸出端電極的另一者為低電位電極。該第一背電極與該第二背電極在該運動方向上間隔設置。且該第一背電極與該輸出端電極電連接。該第二背電極與該輸入端電極電連接。In some embodiments, the first pair of electrodes has an input terminal electrode and a first back electrode respectively disposed on two opposite sides of the first vibration part in the thickness direction. The input terminal electrode and the first back electrode are aligned with each other in the thickness direction. The second pair of electrodes has an output terminal electrode and a second back electrode respectively disposed on two opposite sides of the second vibration part in the thickness direction. The output terminal electrode and the second back electrode are aligned with each other in the thickness direction. The input terminal electrode and the output terminal electrode are located on the same side of the wafer and are spaced apart in the movement direction. One of the input terminal electrode and the output terminal electrode is a high potential electrode. The other of the input terminal electrode and the output terminal electrode is a low potential electrode. The first back electrode and the second back electrode are spaced apart in the moving direction, and the first back electrode is electrically connected to the output electrode, and the second back electrode is electrically connected to the input electrode.
在一些實施態樣中,該第一對電極具有分別設置於該第一振動部在該厚度方向上的兩相反面的一輸入端電極及一第一背電極。該輸入端電極與該第一背電極在該厚度方向上相互對準。該第二對電極具有分別設置於該第二振動部在該厚度方向上的兩相反面的一輸出端電極及一第二背電極。該輸出端電極與該第二背電極在該厚度方向上相互對準。該輸入端電極與該輸出端電極位於該晶體片的同一側且在該運動方向上間隔設置。該輸入端電極與該輸出端電極的其中一者為高電位電極。該輸入端電極與該輸出端電極的另一者為低電位電極。該第一背電極與該第二背電極電連接。In some embodiments, the first pair of electrodes has an input terminal electrode and a first back electrode respectively disposed on two opposite sides of the first vibration part in the thickness direction. The input terminal electrode and the first back electrode are aligned with each other in the thickness direction. The second pair of electrodes has an output terminal electrode and a second back electrode respectively disposed on two opposite sides of the second vibration part in the thickness direction. The output terminal electrode and the second back electrode are aligned with each other in the thickness direction. The input terminal electrode and the output terminal electrode are located on the same side of the wafer and are spaced apart in the movement direction. One of the input terminal electrode and the output terminal electrode is a high potential electrode. The other of the input terminal electrode and the output terminal electrode is a low potential electrode. The first back electrode is electrically connected to the second back electrode.
在一些實施態樣中,該輸入端電極與該輸出端電極相鄰的一側緣之間的間距小於0.5公釐且不為零。In some implementations, a distance between the input electrode and a side edge adjacent to the output electrode is less than 0.5 mm and is not zero.
在一些實施態樣中,該輸入端電極與該輸出端電極兩者平行於該運動方向且垂直於該厚度方向的一面其形狀為多邊形、正圓形與橢圓形的其中一種。In some embodiments, a surface of the input electrode and the output electrode that is parallel to the moving direction and perpendicular to the thickness direction has a shape that is one of a polygon, a perfect circle, and an ellipse.
在一些實施態樣中,該晶體共振器適用於藉由二導電固定件電連接於一基座。其中,該晶體片與該基座在該厚度方向上間隔設置。該第一振動部與該第二振動部界定出一相互接合的接面。該接面平行於該厚度方向的兩側緣分別供該等導電固定件連接。該第一對電極還具有一兩端分別連接於該等導電固定件的其中一者與該輸入端電極的輸入端銜接電極。該第二對電極還具有一兩端分別連接於該等導電固定件的另一者與該輸出端電極的輸出端銜接電極。In some embodiments, the crystal resonator is suitable for being electrically connected to a base via two conductive fixings. The crystal plate and the base are spaced apart in the thickness direction. The first vibrating portion and the second vibrating portion define a mutually joined interface. The two side edges of the interface parallel to the thickness direction are respectively connected to the conductive fixings. The first pair of electrodes also has an input terminal connecting electrode whose two ends are respectively connected to one of the conductive fixings and the input terminal electrode. The second pair of electrodes also has an output terminal connecting electrode whose two ends are respectively connected to the other of the conductive fixings and the output terminal electrode.
本發明之功效在於:藉由該第一對電極與該第二對電極分別對該第一振動部與該第二振動部施加極性相反的電壓,能讓該第一振動部與該第二振動部兩者受到外界干擾所引進的慣性力相互抵消,進而消除慣性力對該晶體片所產生的加速度振動效應,以達到降低加速度靈敏度的效果。The effect of the present invention is that: by applying voltages of opposite polarities to the first vibration part and the second vibration part respectively through the first pair of electrodes and the second pair of electrodes, the inertial forces introduced by external interference to the first vibration part and the second vibration part can offset each other, thereby eliminating the acceleration vibration effect of the inertial force on the crystal piece, thereby achieving the effect of reducing the acceleration sensitivity.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that similar components are represented by the same reference numerals in the following description.
參閱圖2至圖4,為本發明晶體共振器100的一第一實施例。該晶體共振器100適用於藉由二導電固定件8電連接於一基座9。該基座9可以是設有電路圖案的封裝體,不以特定形式為限。該等導電固定件8的材質例如為可導電的金屬但不以此為限。並且,該等導電固定件8可以是藉由銀膠點膠或者是焊錫等方式被固化在該晶體共振器100與該基座9之間,並使該晶體共振器100懸空地設置於該基座9上。Referring to FIG. 2 to FIG. 4 , a first embodiment of the crystal resonator 100 of the present invention is shown. The crystal resonator 100 is suitable for being electrically connected to a base 9 via two conductive fixing members 8. The base 9 may be a package provided with a circuit pattern, and is not limited to a specific form. The material of the conductive fixing members 8 is, for example, a conductive metal but is not limited thereto. Furthermore, the conductive fixing members 8 may be solidified between the crystal resonator 100 and the base 9 by means of silver glue dots or solder, and the crystal resonator 100 is suspended on the base 9.
該晶體共振器100包含一晶體片2及一電極組3。該晶體片2插設於該等導電固定件8,而與該基座9在一厚度方向Z上間隔設置。該晶體片2例如為石英,並呈現為片狀。該晶體片2的振盪模式為厚度剪切(thickness shear)振盪模式。也就是說,該晶體片2能夠被施加電壓而在一不平行於該厚度方向Z的運動方向X上產生厚度剪切振盪。後續為方便說明,將該晶體片2的厚度軸的延伸方向定義為該晶體片2的該厚度方向Z,即圖2中該晶體共振器100的上下方向;將圖2中該晶體共振器100的左右方向定義為該晶體片2的該運動方向X,且該運動方向X不平行於該厚度方向Z;將圖2中該晶體共振器100的前後方向定義為一不平行於該運動方向X的寬度方向Y。The crystal resonator 100 includes a crystal plate 2 and an electrode group 3. The crystal plate 2 is inserted into the conductive fixing members 8 and is spaced apart from the base 9 in a thickness direction Z. The crystal plate 2 is, for example, quartz and is in a sheet shape. The oscillation mode of the crystal plate 2 is a thickness shear oscillation mode. That is, the crystal plate 2 can generate thickness shear oscillation in a motion direction X that is not parallel to the thickness direction Z when a voltage is applied. For the convenience of explanation, the extension direction of the thickness axis of the crystal piece 2 is defined as the thickness direction Z of the crystal piece 2, that is, the up-down direction of the crystal resonator 100 in FIG. 2 ; the left-right direction of the crystal resonator 100 in FIG. 2 is defined as the movement direction X of the crystal piece 2, and the movement direction X is not parallel to the thickness direction Z; the front-back direction of the crystal resonator 100 in FIG. 2 is defined as a width direction Y that is not parallel to the movement direction X.
該晶體片2一體成形,並包括一第一振動部21、一第二振動部22及二分別位於該晶體片2的兩相反側的晶面23。該第一振動部21與該第二振動部22沿該運動方向X排列設置且相互連接。該第一振動部21與該第二振動部22界定出一相互接合的接面24。如此一來,該第一振動部21與該第二振動部22兩者在該運動方向X、該寬度方向Y上與該厚度方向Z三個軸向上的尺寸皆相同。並且,該接面24的位置為該晶體片2在該運動方向X上的正中間。The crystal piece 2 is formed in one piece and includes a first vibration part 21, a second vibration part 22 and two crystal planes 23 located on two opposite sides of the crystal piece 2. The first vibration part 21 and the second vibration part 22 are arranged along the movement direction X and connected to each other. The first vibration part 21 and the second vibration part 22 define a mutually joined interface 24. In this way, the first vibration part 21 and the second vibration part 22 have the same dimensions in the three axial directions of the movement direction X, the width direction Y and the thickness direction Z. In addition, the location of the interface 24 is the center of the crystal piece 2 in the movement direction X.
該等晶面23平行於該運動方向X且垂直於該厚度方向Z。各該晶面23為該第一振動部21與該第二振動部22同側的一面。在本第一實施例中,該等晶面23的其中一者為該第一振動部21與該第二振動部22的頂面,該等晶面23的另一者為該第一振動部21與該第二振動部22的底面。且該等晶面23的形狀是以例如為長方形的矩形示例,即該晶體片2在該運動方向X上的尺寸大於該晶體片2在該寬度方向Y上的尺寸,如此一來,當該晶體片2被區分成該第一振動部21與該第二振動部22時,該第一振動部21與該第二振動部22兩者的銜接處(即該接面24)所受到的應力較小而不易斷裂,但該等晶面23的形狀也可以是正圓形或橢圓形,不以特定形狀為限。The crystal planes 23 are parallel to the movement direction X and perpendicular to the thickness direction Z. Each of the crystal planes 23 is a surface on the same side of the first vibration part 21 and the second vibration part 22. In the first embodiment, one of the crystal planes 23 is the top surface of the first vibration part 21 and the second vibration part 22, and the other of the crystal planes 23 is the bottom surface of the first vibration part 21 and the second vibration part 22. The shape of the crystal planes 23 is, for example, a rectangular shape, that is, the size of the crystal piece 2 in the movement direction X is larger than the size of the crystal piece 2 in the width direction Y. In this way, when the crystal piece 2 is divided into the first vibration part 21 and the second vibration part 22, the stress received at the joint between the first vibration part 21 and the second vibration part 22 (that is, the joint 24) is smaller and less likely to break. However, the shape of the crystal planes 23 can also be a perfect circle or an ellipse, and is not limited to a specific shape.
該電極組3包括一設置於該第一振動部21的第一對電極31,及一設置於該第二振動部22的第二對電極32。該第一對電極31與該第二對電極32分別對該第一振動部21與該第二振動部22施加極性相反的電壓,使該第一振動部21與該第二振動部22兩者所產生的厚度剪切振盪在該運動方向X上相向振動或背向振動(見圖4中繪製在該晶體片2上的箭頭)。The electrode assembly 3 includes a first pair of electrodes 31 disposed on the first vibrating portion 21, and a second pair of electrodes 32 disposed on the second vibrating portion 22. The first pair of electrodes 31 and the second pair of electrodes 32 apply voltages of opposite polarity to the first vibrating portion 21 and the second vibrating portion 22, respectively, so that the thickness shear oscillations generated by the first vibrating portion 21 and the second vibrating portion 22 vibrate in opposite directions or in opposite directions in the movement direction X (see the arrows drawn on the wafer 2 in FIG. 4 ).
具體來說,該第一對電極31具有一輸入端電極311、一第一背電極312、一輸入端銜接電極313及一第一背銜接電極314。該輸入端電極311與該第一背電極312分別設置於該第一振動部21在該厚度方向Z上的兩相反面,並在該厚度方向Z上相互對準。該輸入端銜接電極313的兩端分別連接於該等導電固定件8的其中一者的頂部與該輸入端電極311;該第一背銜接電極314的兩端分別連接於該等導電固定件8的另一者的底部與該第一背電極312。在本第一實施例中,該輸入端電極311與該第一背電極312可以是兩者的形狀與面積完全相同,且該輸入端電極311與該第一背電極312在該厚度方向Z上完全對準,但在另一些實施例中,該輸入端電極311與該第一背電極312也可以是兩者的形狀或面積有所不相同,使得該輸入端電極311與該第一背電極312在該厚度方向Z上僅部分對準,或者是該輸入端電極311的邊緣至該第一振動部21的邊緣的間距不同於該第一背電極312的邊緣至該第一振動部21的邊緣的間距,使得該輸入端電極311與該第一背電極312在該厚度方向Z上同樣僅部分對準。當該輸入端電極311與該第一背電極312的至少一部分在該厚度方向Z上對準,該輸入端電極311與該第一背電極312即能夠對該第一振動部21施加電壓。Specifically, the first pair of electrodes 31 has an input terminal electrode 311, a first back electrode 312, an input terminal anchoring electrode 313 and a first back anchoring electrode 314. The input terminal electrode 311 and the first back electrode 312 are respectively disposed on two opposite sides of the first vibrating portion 21 in the thickness direction Z and are aligned with each other in the thickness direction Z. The two ends of the input terminal anchoring electrode 313 are respectively connected to the top of one of the conductive fixing members 8 and the input terminal electrode 311; the two ends of the first back anchoring electrode 314 are respectively connected to the bottom of the other of the conductive fixing members 8 and the first back electrode 312. In the first embodiment, the input electrode 311 and the first back electrode 312 may have the same shape and area, and the input electrode 311 and the first back electrode 312 are completely aligned in the thickness direction Z. However, in other embodiments, the input electrode 311 and the first back electrode 312 may have different shapes or areas, so that the input electrode 311 and the first back electrode 312 are aligned in the thickness direction Z. The input electrode 311 and the first back electrode 312 are only partially aligned in the thickness direction Z, or the distance from the edge of the input electrode 311 to the edge of the first vibration part 21 is different from the distance from the edge of the first back electrode 312 to the edge of the first vibration part 21, so that the input electrode 311 and the first back electrode 312 are also only partially aligned in the thickness direction Z. When at least a portion of the input electrode 311 and the first back electrode 312 are aligned in the thickness direction Z, the input electrode 311 and the first back electrode 312 can apply a voltage to the first vibration part 21.
該第二對電極32具有一輸出端電極321、一第二背電極322、一輸出端銜接電極323及一第二背銜接電極324。該輸出端電極321與該第二背電極322分別設置於該第二振動部22在該厚度方向Z上的兩相反面,並在該厚度方向Z上相互對準。該第二背銜接電極324的兩端分別連接於該等導電固定件8的其中一者的底部與該第二背電極322,使得該第二背電極322與該輸入端電極311電導通;該輸出端銜接電極323的兩端分別連接於該等導電固定件8的另一者的頂部與該輸出端電極321,使得該輸出端電極321與該第一背電極312電導通。在本第一實施例中,該輸出端電極321與該第二背電極322也可以是兩者的形狀與面積完全相同,且該輸出端電極321與該第二背電極322在該厚度方向Z上完全對準,但在另一些實施例中,該輸出端電極321與該第二背電極322還可以是兩者的形狀或面積有所不相同,使得該輸出端電極321與該第二背電極322在該厚度方向Z上僅部分對準,或者是該輸出端電極321的邊緣至該第二振動部22的邊緣的間距不同於該第二背電極322的邊緣至該第二振動部22的邊緣的間距,使得該輸出端電極321與該第二背電極322在該厚度方向Z上同樣僅部分對準。當該輸出端電極321與該第二背電極322的至少一部分在該厚度方向Z上對準,該輸出端電極321與該第二背電極322即能夠對該第二振動部22施加電壓。The second pair of electrodes 32 has an output electrode 321, a second back electrode 322, an output terminal connecting electrode 323 and a second back connecting electrode 324. The output electrode 321 and the second back electrode 322 are respectively disposed on two opposite sides of the second vibration portion 22 in the thickness direction Z and are aligned with each other in the thickness direction Z. The two ends of the second back-connecting electrode 324 are respectively connected to the bottom of one of the conductive fixing members 8 and the second back electrode 322, so that the second back electrode 322 is electrically connected to the input electrode 311; the two ends of the output-end connecting electrode 323 are respectively connected to the top of the other one of the conductive fixing members 8 and the output-end electrode 321, so that the output-end electrode 321 is electrically connected to the first back electrode 312. In the first embodiment, the output electrode 321 and the second back electrode 322 may have the same shape and area, and the output electrode 321 and the second back electrode 322 are completely aligned in the thickness direction Z. However, in other embodiments, the output electrode 321 and the second back electrode 322 may have different shapes or areas, so that the output electrode 321 and the second back electrode 322 are completely aligned in the thickness direction Z. The output electrode 321 and the second back electrode 322 are only partially aligned in the thickness direction Z, or the distance from the edge of the output electrode 321 to the edge of the second vibration part 22 is different from the distance from the edge of the second back electrode 322 to the edge of the second vibration part 22, so that the output electrode 321 and the second back electrode 322 are also only partially aligned in the thickness direction Z. When at least a portion of the output electrode 321 and the second back electrode 322 are aligned in the thickness direction Z, the output electrode 321 and the second back electrode 322 can apply a voltage to the second vibration part 22.
換言之,該輸入端電極311與該輸出端電極321位於該晶體片2的同一側(即該晶體片2的頂面)且在該運動方向X上左、右間隔設置。該第一背電極312與該第二背電極322皆位於該晶體片2相同的另一側(即該晶體片2的底面)且在該運動方向X上左、右間隔設置。並且,該第一背電極312與該輸出端電極321電連接而有相同電位;該第二背電極322則與該輸入端電極311電連接而有相同電位。如此一來,當該輸入端電極311與該輸出端電極321的其中一者為高電位電極,且該輸入端電極311與該輸出端電極321的另一者為低電位電極時,該輸入端電極311與該第一背電極312之間會形成一電壓差,且該輸出端電極321與該第二背電極322之間會形成極性相反於該電壓差的另一電壓差,並讓該第一振動部21的上、下兩側分別在該運動方向X上反復朝相反的方向運動,也讓該第二振動部22的上、下兩側分別在該運動方向X上反復朝相反的方向運動。也就是說,如圖4中的箭頭所示,該第一振動部21的頂部與該第二振動部22的頂部兩者相向振動,而該第一振動部21的底部與該第二振動部22的底部兩者背向振動,進而讓該第一振動部21與該第二振動部22兩者受到外界干擾所引進的慣性力相互抵消,而能消除慣性力對該晶體片2所產生的加速度振動效應,以達到降低加速度靈敏度的效果。In other words, the input electrode 311 and the output electrode 321 are located on the same side of the wafer 2 (i.e., the top surface of the wafer 2) and are spaced apart from each other on the left and right sides in the moving direction X. The first back electrode 312 and the second back electrode 322 are both located on the other side of the wafer 2 (i.e., the bottom surface of the wafer 2) and are spaced apart from each other on the left and right sides in the moving direction X. Furthermore, the first back electrode 312 is electrically connected to the output electrode 321 and has the same potential; the second back electrode 322 is electrically connected to the input electrode 311 and has the same potential. In this way, when one of the input electrode 311 and the output electrode 321 is a high potential electrode and the other of the input electrode 311 and the output electrode 321 is a low potential electrode, a voltage difference is formed between the input electrode 311 and the first back electrode 312, and another voltage difference with a polarity opposite to the voltage difference is formed between the output electrode 321 and the second back electrode 322, so that the upper and lower sides of the first vibration part 21 respectively move in opposite directions repeatedly in the movement direction X, and the upper and lower sides of the second vibration part 22 respectively move in opposite directions repeatedly in the movement direction X. That is, as shown by the arrows in FIG. 4 , the top of the first vibrating portion 21 and the top of the second vibrating portion 22 vibrate toward each other, while the bottom of the first vibrating portion 21 and the bottom of the second vibrating portion 22 vibrate away from each other, thereby allowing the inertial forces introduced into the first vibrating portion 21 and the second vibrating portion 22 by external interference to cancel each other out, thereby eliminating the acceleration vibration effect of the inertial force on the crystal piece 2, thereby achieving the effect of reducing the acceleration sensitivity.
參閱圖3與圖4,在本第一實施例中,該輸入端電極311與該輸出端電極321相鄰的一側緣之間的間距d小於0.5公釐且不為零。3 and 4 , in the first embodiment, a distance d between adjacent sides of the input electrode 311 and the output electrode 321 is less than 0.5 mm and is not zero.
參閱圖2,較佳地,該接面24平行於該厚度方向Z的兩側緣分別供該等導電固定件8連接,使得該晶體片2是在該運動方向X上的中心處被該等導電固定件8支撐,而能讓該晶體片2的左、右兩側對稱地懸空。Referring to FIG. 2 , preferably, the two side edges of the junction 24 parallel to the thickness direction Z are respectively connected to the conductive fixing members 8 , so that the wafer 2 is supported by the conductive fixing members 8 at the center in the movement direction X, and the left and right sides of the wafer 2 can be suspended symmetrically.
參閱圖5,為該第一振動部21與該第二振動部22被施加電壓時,該第一振動部21與該第二振動部22兩者所產生的厚度剪切振盪在運動方向上的振動位移量的模擬圖。其中,圖5中的箭頭示意該第一振動部21與該第二振動部22在該運動方向X上背向振動。並且,圖5中灰階呈現較淺的部分表示振動位移量較大,圖5中灰階呈現較深的部分表示振動位移量較小。因而,在本第一實施例中,該輸入端電極311與該輸出端電極321的形狀是以例如為長方形且能覆蓋圖5中較淺部分的多邊形示例,但該輸入端電極311與該輸出端電極321的形狀不以多邊形為限,該輸入端電極311與該輸出端電極321的形狀也可以是正圓形或橢圓形等能覆蓋圖5中較淺部分的電極圖案。Referring to FIG5 , it is a simulation diagram of the vibration displacement in the movement direction of the thickness shear vibration generated by the first vibration part 21 and the second vibration part 22 when voltage is applied to the first vibration part 21 and the second vibration part 22. The arrows in FIG5 indicate that the first vibration part 21 and the second vibration part 22 vibrate in opposite directions in the movement direction X. In addition, the lighter grayscale portion in FIG5 indicates a larger vibration displacement, and the darker grayscale portion in FIG5 indicates a smaller vibration displacement. Therefore, in this first embodiment, the shape of the input electrode 311 and the output electrode 321 is, for example, a rectangle and a polygon that can cover the shallower part in Figure 5, but the shape of the input electrode 311 and the output electrode 321 is not limited to a polygon. The shape of the input electrode 311 and the output electrode 321 can also be a perfect circle or an ellipse, etc., which can cover the shallower part of the electrode pattern in Figure 5.
參閱圖6與圖7,是以相同測試條件分別對習知的晶體共振器100以及該第一實施例所做的訊號量測結果。如圖7所示,當該第一實施例被施加電壓而產生不同振盪頻率的訊號時,其加速度靈敏度(g-sensitivity)區間小於0.2 ppb/g(接近0.1 ppb/g);而如圖6所示,當習知的晶體共振器100被施加電壓而產生不同振盪頻率的訊號時,其加速度靈敏度區間則為0.4 ppb/g~0.8 ppb/g。也就是說,該第一實施例的抗加速度效應明顯優於習知的晶體共振器100。Referring to FIG. 6 and FIG. 7, the signal measurement results of the known crystal resonator 100 and the first embodiment are respectively obtained under the same test conditions. As shown in FIG. 7, when the first embodiment is applied with voltage to generate signals of different oscillation frequencies, its acceleration sensitivity (g-sensitivity) range is less than 0.2 ppb/g (close to 0.1 ppb/g); and as shown in FIG. 6, when the known crystal resonator 100 is applied with voltage to generate signals of different oscillation frequencies, its acceleration sensitivity range is 0.4 ppb/g~0.8 ppb/g. In other words, the first embodiment has a significantly better anti-acceleration effect than the known crystal resonator 100.
參閱圖8至圖10,為本發明晶體共振器100'的一第二實施例。該第二實施例與該第一實施例的結構相近,該第一對電極31同樣具有一輸入端電極311、一第一背電極312、一輸入端銜接電極313及一第一背銜接電極314'。該第二對電極32同樣具有一輸出端電極321、一第二背電極322、一輸出端銜接電極323及一第二背銜接電極324'。該第二實施例與該第一實施例的差別在於,該第二實施例的該第一背銜接電極314'與該第二背銜接電極324'相互連接,且該第一背銜接電極314'與該等導電固定件8分隔,且該第一背銜接電極314'遠離該第二背銜接電極324'的一端連接於該第一背電極312;該第二背銜接電極324'亦與該等導電固定件8分隔,且該第二背銜接電極324'遠離該第一背銜接電極314'的一端連接於該第二背電極322。如此一來,該第一背電極312與該第二背電極322會有相同電位(零電位)。當該輸入端電極311與該輸出端電極321的其中一者為高電位電極,且該輸入端電極311與該輸出端電極321的另一者為低電位電極時,該輸入端電極311與該第一背電極312之間也可以形成一電壓差,且該輸出端電極321與該第二背電極322之間也會形成極性相反於該電壓差的另一電壓差,並同樣能讓該第一振動部21與該第二振動部22兩者所產生的厚度剪切振盪在該運動方向X上相向振動或背向振動,進而讓該第一振動部21與該第二振動部22兩者受到外界干擾所引進的慣性力相互抵消,而能消除慣性力對該晶體片2所產生的加速度振動效應,以達到降低加速度靈敏度的效果。Referring to FIG. 8 to FIG. 10 , a second embodiment of the crystal resonator 100 ′ of the present invention is shown. The second embodiment is similar to the first embodiment in structure, and the first pair of electrodes 31 also has an input terminal electrode 311, a first back electrode 312, an input terminal connecting electrode 313, and a first back connecting electrode 314 ′. The second pair of electrodes 32 also has an output terminal electrode 321, a second back electrode 322, an output terminal connecting electrode 323, and a second back connecting electrode 324 ′. The difference between the second embodiment and the first embodiment is that the first back-anchored electrode 314' and the second back-anchored electrode 324' of the second embodiment are connected to each other, and the first back-anchored electrode 314' is separated from the conductive fixing members 8, and one end of the first back-anchored electrode 314' away from the second back-anchored electrode 324' is connected to the first back electrode 312; the second back-anchored electrode 324' is also separated from the conductive fixing members 8, and one end of the second back-anchored electrode 324' away from the first back-anchored electrode 314' is connected to the second back electrode 322. In this way, the first back electrode 312 and the second back electrode 322 have the same potential (zero potential). When one of the input electrode 311 and the output electrode 321 is a high potential electrode, and the other of the input electrode 311 and the output electrode 321 is a low potential electrode, a voltage difference can also be formed between the input electrode 311 and the first back electrode 312, and another voltage difference with a polarity opposite to the voltage difference can also be formed between the output electrode 321 and the second back electrode 322. The pressure difference can also make the thickness shear vibrations generated by the first vibration part 21 and the second vibration part 22 vibrate in the direction of movement X in the opposite direction or in the opposite direction, thereby making the inertial forces introduced by the external interference to the first vibration part 21 and the second vibration part 22 offset each other, thereby eliminating the acceleration vibration effect of the inertial force on the crystal piece 2, so as to achieve the effect of reducing the acceleration sensitivity.
參閱圖11,為本發明晶體共振器100''的一第三實施例。該第三實施例與該第一實施例的結構相近,該第三實施例與該第一實施例的差別在於,該晶體片2''呈現為圓片狀,並還包括一平行於該厚度方向Z的切面25,該切面25用以定義晶軸。該切面25的兩相反側緣分別連接於該等晶面23''並為直線狀。在本第三實施例中,該切面25可以是將該晶體片2''縱向切割而形成。此外,該等晶面23''概呈圓形,且該等晶面23''的周緣的一部分(即該切面25的頂緣與底緣)略平,而能夠定義晶軸以供外部設備對位使用。Refer to Figure 11, which is a third embodiment of the crystal resonator 100'' of the present invention. The structure of the third embodiment is similar to that of the first embodiment. The difference between the third embodiment and the first embodiment is that the crystal sheet 2'' is in the shape of a disk and also includes a cut surface 25 parallel to the thickness direction Z, and the cut surface 25 is used to define the crystal axis. The two opposite side edges of the cut surface 25 are respectively connected to the crystal planes 23'' and are straight lines. In this third embodiment, the cut surface 25 can be formed by longitudinally cutting the crystal sheet 2''. In addition, the crystal planes 23'' are roughly circular, and a portion of the periphery of the crystal planes 23'' (i.e., the top edge and the bottom edge of the cut surface 25) are slightly flat, so as to define the crystal axis for use in external equipment alignment.
參閱圖12,為本發明晶體共振器100'''的一第四實施例。該第四實施例與該第一實施例的結構相近,該第一對電極31同樣具有一輸入端電極311、一第一背電極312、一輸入端銜接電極313'''及一第一背銜接電極314。該第二對電極32同樣具有一輸出端電極321、一第二背電極322、一輸出端銜接電極323'''及一第二背銜接電極324。該第四實施例與該第一實施例的差別在於,該第四實施例的該輸入端銜接電極313'''以及該輸出端銜接電極323'''是以該晶體片2在該運動方向X上的中心處以及該晶體片2在該寬度方向Y上的中心處對稱地分布於該晶體片2的兩斜對角處,且該等導電固定件8對應該輸入端銜接電極313'''以及該輸出端銜接電極323'''的位置位於該晶體片2的兩斜對角處,能讓該晶體片2的左、右兩側被穩定地支撐。Referring to FIG. 12 , a fourth embodiment of the crystal resonator 100 ′″ of the present invention is shown. The fourth embodiment is similar to the first embodiment in structure, and the first pair of electrodes 31 also has an input terminal electrode 311, a first back electrode 312, an input terminal connecting electrode 313 ′″ and a first back connecting electrode 314. The second pair of electrodes 32 also has an output terminal electrode 321, a second back electrode 322, an output terminal connecting electrode 323 ′″ and a second back connecting electrode 324. The difference between the fourth embodiment and the first embodiment is that the input terminal anchoring electrode 313''' and the output terminal anchoring electrode 323''' of the fourth embodiment are symmetrically distributed at the two diagonal corners of the crystal piece 2 at the center of the crystal piece 2 in the movement direction X and the center of the crystal piece 2 in the width direction Y, and the positions of the conductive fixing members 8 corresponding to the input terminal anchoring electrode 313''' and the output terminal anchoring electrode 323''' are located at the two diagonal corners of the crystal piece 2, so that the left and right sides of the crystal piece 2 can be stably supported.
綜上所述,藉由該第一對電極31與該第二對電極32分別對該第一振動部21與該第二振動部22施加極性相反的電壓,能讓該第一振動部21與該第二振動部22兩者受到外界干擾所引進的慣性力相互抵消,進而消除慣性力對該晶體片2所產生的加速度振動效應,以達到降低加速度靈敏度的效果,故確實能達成本發明的目的。In summary, by applying voltages of opposite polarities to the first vibration part 21 and the second vibration part 22 respectively by the first pair of electrodes 31 and the second pair of electrodes 32, the inertial forces introduced by external interference to the first vibration part 21 and the second vibration part 22 can cancel each other out, thereby eliminating the acceleration vibration effect of the inertial force on the crystal piece 2, thereby achieving the effect of reducing the acceleration sensitivity, and thus the purpose of the present invention can be achieved.
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。However, the above is only an embodiment of the present invention and should not be used to limit the scope of implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope of the present patent.
100、100'、100''、100''':晶體共振器 2、2'':晶體片 21:第一振動部 22:第二振動部 23、23'':晶面 24:接面 25:切面 3:電極組 31:第一對電極 311:輸入端電極 312:第一背電極 313、313''':輸入端銜接電極 314、314':第一背銜接電極 32:第二對電極 321:輸出端電極 322:第二背電極 323、323''':輸出端銜接電極 324、324':第二背銜接電極 8:導電固定件 9:基座 X:運動方向 Y:寬度方向 Z:厚度方向 d:間距 100, 100', 100'', 100''': crystal resonator 2, 2'': crystal piece 21: first vibration part 22: second vibration part 23, 23'': crystal plane 24: junction 25: cut surface 3: electrode group 31: first pair of electrodes 311: input terminal electrode 312: first back electrode 313, 313''': input terminal connecting electrode 314, 314': first back connecting electrode 32: second pair of electrodes 321: output terminal electrode 322: second back electrode 323, 323''': output terminal connecting electrode 324, 324': Second back-mounted electrode 8: Conductive fixing member 9: Base X: Movement direction Y: Width direction Z: Thickness direction d: Spacing
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一立體示意圖,說明習知的晶體共振器之實施方式,並說明習知的晶體共振器與兩個導電膠塊的連接關係; 圖2是一立體示意圖,說明本發明晶體共振器之一第一實施例藉由兩個導電固定件電連接於一基座的實施方式; 圖3是一沿圖2中之線III-III的剖視示意圖,並移除該等導電固定件與該基座; 圖4是一前視示意圖,說明該第一實施例之電路連接關係; 圖5是一模擬圖,說明該第一實施例的一第一振動部與一第二振動部兩者所產生的厚度剪切振盪在運動方向上的振動位移量; 圖6是一數據圖,說明習知的晶體共振器所產生的不同振盪頻率訊號其加速度靈敏度的量測結果; 圖7是一數據圖,說明該第一實施例所產生的不同振盪頻率訊號其加速度靈敏度的量測結果; 圖8是一立體示意圖,說明本發明晶體共振器之一第二實施例藉由該等導電固定件電連接於該基座的實施方式; 圖9是一沿圖8中之線IX-IX的剖視示意圖,並移除該等導電固定件與該基座; 圖10是一前視示意圖,說明該第二實施例之電路連接關係; 圖11是一俯視示意圖,說明本發明晶體共振器之一第三實施例之一晶體片的實施方式;及 圖12是一俯視示意圖,說明本發明晶體共振器之一第四實施例的實施方式。 Other features and effects of the present invention will be clearly presented in the implementation method with reference to the drawings, in which: FIG. 1 is a three-dimensional schematic diagram illustrating the implementation method of the known crystal resonator and the connection relationship between the known crystal resonator and two conductive glue blocks; FIG. 2 is a three-dimensional schematic diagram illustrating the implementation method of a first embodiment of the crystal resonator of the present invention electrically connected to a base by two conductive fixings; FIG. 3 is a cross-sectional schematic diagram along the line III-III in FIG. 2, and the conductive fixings and the base are removed; FIG. 4 is a front view schematic diagram illustrating the circuit connection relationship of the first embodiment; FIG. 5 is a simulation diagram illustrating the vibration displacement of the thickness shear vibration generated by a first vibration part and a second vibration part of the first embodiment in the movement direction; FIG6 is a data graph illustrating the measurement results of the acceleration sensitivity of different oscillation frequency signals generated by the known crystal resonator; FIG7 is a data graph illustrating the measurement results of the acceleration sensitivity of different oscillation frequency signals generated by the first embodiment; FIG8 is a three-dimensional schematic diagram illustrating the implementation method of the second embodiment of the crystal resonator of the present invention being electrically connected to the base by the conductive fixings; FIG9 is a cross-sectional schematic diagram along the line IX-IX in FIG8, and the conductive fixings and the base are removed; FIG10 is a front view schematic diagram illustrating the circuit connection relationship of the second embodiment; FIG11 is a top view schematic diagram illustrating the implementation method of a crystal sheet of a third embodiment of the crystal resonator of the present invention; and FIG12 is a schematic top view illustrating the implementation of the fourth embodiment of the crystal resonator of the present invention.
100:晶體共振器 100:Crystal resonator
2:晶體片 2: Crystal chip
21:第一振動部 21: First vibration part
22:第二振動部 22: Second vibration part
23:晶面 23: Crystal surface
24:接面 24: Meeting
3:電極組 3: Electrode set
31:第一對電極 31: The first pair of electrodes
311:輸入端電極 311: Input electrode
312:第一背電極 312: First back electrode
313:輸入端銜接電極 313: Input terminal connected to electrode
32:第二對電極 32: Second pair of electrodes
321:輸出端電極 321: Output electrode
322:第二背電極 322: Second back electrode
323:輸出端銜接電極 323: Output terminal connected to electrode
8:導電固定件 8: Conductive fixings
9:基座 9: Base
X:運動方向 X: Movement direction
Y:寬度方向 Y: width direction
Z:厚度方向 Z: thickness direction
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| TW112151103A TWI887936B (en) | 2023-12-27 | 2023-12-27 | Crystal resonator |
| CN202410358986.3A CN120222966A (en) | 2023-12-27 | 2024-03-27 | Crystal resonator |
| US18/819,983 US12525954B2 (en) | 2023-12-27 | 2024-08-29 | Low g-sensitivity crystal resonator |
| EP24199548.9A EP4580054A1 (en) | 2023-12-27 | 2024-09-10 | Low acceleration sensitivity crystal resonator |
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| TW112151103A TWI887936B (en) | 2023-12-27 | 2023-12-27 | Crystal resonator |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4388548A (en) * | 1980-01-17 | 1983-06-14 | U.S. Philips Corporation | Multiple mode piezoelectric resonator |
| US5132643A (en) * | 1990-02-28 | 1992-07-21 | Nihon Dempa Kogyo Co., Ltd. | Crystal resonator with plural electrodes for use in a crystal oscillating device of a temperature compensation type |
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| EP0680142A1 (en) * | 1985-04-11 | 1995-11-02 | Toyo Communication Equipment Co. Ltd. | Piezoelectric resonators for overtone oscillations |
| FR2745667B1 (en) * | 1996-03-01 | 1998-05-22 | Ecole Nale Sup Artes Metiers | PIEZOELECTRIC RESONATOR WITH SELECTIVE EXCITATION |
| JPH1098350A (en) * | 1996-07-31 | 1998-04-14 | Daishinku Co | Piezoelectric vibration device |
| US11005446B2 (en) * | 2019-05-07 | 2021-05-11 | Fox Enterprises, Inc. | Resonators and devices with a pixel electrode operating across a gap |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4388548A (en) * | 1980-01-17 | 1983-06-14 | U.S. Philips Corporation | Multiple mode piezoelectric resonator |
| US5132643A (en) * | 1990-02-28 | 1992-07-21 | Nihon Dempa Kogyo Co., Ltd. | Crystal resonator with plural electrodes for use in a crystal oscillating device of a temperature compensation type |
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