TWI886616B - Pumping ring assembly and vapor deposition equipment - Google Patents

Abstract

The present invention discloses an exhaust ring assembly and a vapor deposition device. The vapor deposition device includes a reaction chamber and a tray assembly located in the reaction chamber for carrying wafers; the exhaust ring assembly includes: an upper exhaust ring, which is arranged around the tray assembly in the reaction chamber; a lower exhaust ring, which is arranged below the upper exhaust ring in the reaction chamber, and includes 2 or 3 arc-shaped lower exhaust units distributed along the circumference of the tray assembly; and exhaust pipes, which are the same in number as the lower exhaust units, are arranged one by one below each of the lower exhaust units; the upper exhaust ring, the lower exhaust ring and the exhaust pipes are combined into a closed airway connecting the inside and outside of the reaction chamber. The present invention can increase the diameter of the exhaust pipe without affecting the layout of the components in the cavity, and reduce the number of exhaust pipes, meet the process requirements, reduce the processing difficulty and processing cost, and increase the service life of the exhaust ring support.

Description

Pumping ring assembly and vapor deposition equipment

The present invention relates to the field of semiconductor equipment technology, and specifically to an exhaust ring assembly and a vapor deposition device.

Forming thin films on wafers through different gas sources is an important step in semiconductor processes, including chemical vapor deposition (CVD), physical vapor deposition (PVD), etc. When the vapor deposition equipment performs deposition reactions, the reaction gas enters the reaction chamber through the gas inlet device, and then the excess gas after the reaction is extracted from the reaction chamber through the exhaust ring assembly. The exhaust uniformity of the exhaust ring assembly is one of the key factors affecting the uniformity of the thickness of the reaction film. An exhaust ring assembly that can evenly exhaust gas is conducive to forming a stable flow field around the periphery of the wafer carried by the tray assembly, thereby improving the uniformity of film deposition and ensuring the quality of the deposited film.

The conventional air pumping ring assembly is shown in FIG. 1 , which includes a hollow air pumping ring 01 , four or more exhaust pipes 02 connected to the bottom of the air pumping ring 01 , and a plurality of air pumping ring supports 03 . The technical problems of this exhaust ring assembly are: 1. The exhaust pipe 02 is connected to the bottom surface of the exhaust ring 01, and its diameter cannot exceed the difference between the inner and outer diameters of the bottom surface of the exhaust ring 01. However, due to the layout of the components in the reaction chamber, the exhaust ring 01 cannot be designed with a bottom surface with a wider radial width, so the diameter of the exhaust pipe 02 and the exhaust rate are limited; 2. Due to the limitation of technical problem 1, the exhaust ring assembly of the prior art needs to be equipped with more than 4 exhaust pipes 02 to meet the exhaust rate requirements, and the bottom end of each exhaust pipe 02 needs to be welded to the exhaust pipeline outside the cavity, which requires the bottom end of the exhaust pipe 02 to meet the flatness of at least four faces, which increases the pressure. 3. When the pumping rate must be increased, the diameter and radial width of the pumping ring 01 must be increased, and then the diameter of the exhaust pipe 02 can be increased, but this will have a series of effects on the layout of the components in the cavity. For example, it will increase the diameter of the compression ring set on the top of the pumping ring 01, thereby occupying a larger space in the cavity and interfering with the design of the shutter of the sensor port; 4. The material texture of the pumping ring support 03 is ceramic, and its two ends are connected to the bottom of the pumping ring 01 and the bottom wall of the reaction chamber respectively, and the height is relatively high, so when the equipment is working, a large temperature difference will be generated at the two ends, thereby affecting the service life of the ceramic.

The purpose of the present invention is to provide an exhaust ring assembly and a vapor deposition device, which can increase the diameter of the exhaust pipe without affecting the layout of the components in the cavity, and reduce the number of exhaust pipes, meet the process requirements for the exhaust rate, reduce the processing difficulty and processing cost, and increase the service life of the exhaust ring support.

In order to achieve the above purpose, the present invention is implemented through the following technical solutions:

A vacuum ring assembly is used in a vapor deposition device, the vapor deposition device includes a reaction chamber and a tray assembly located in the reaction chamber for carrying wafers, the vacuum ring assembly includes: an upper vacuum ring, which is arranged around the tray assembly in the reaction chamber, and the ring body thereof is hollow to form an upper vacuum chamber connected to the reaction chamber; a lower vacuum ring, which is arranged below the upper vacuum ring in the reaction chamber, and includes two or three arc-shaped lower vacuum rings distributed along the circumference of the tray assembly. Unit, each lower air pumping unit is hollow to form a lower air pumping cavity, each lower air pumping cavity is separately arranged and connected to the upper air pumping cavity; and exhaust pipes, which are the same in number as the lower air pumping units, are arranged one by one under each lower air pumping unit, the top end of each exhaust pipe is connected to the corresponding lower air pumping cavity, and the bottom end is connected to the outside of the reaction chamber; the upper air pumping ring, the lower air pumping ring and the exhaust pipe are combined to form an airway connecting the inside and outside of the reaction chamber.

Optionally, the top end of each exhaust pipe is connected to the bottom surface of the corresponding lower air pumping unit, and the difference between the inner and outer diameters of the bottom surface of the lower air pumping unit is greater than the difference between the inner and outer diameters of the bottom surface of the upper air pumping ring.

Optionally, the air pumping ring assembly further includes an air pumping ring support, and the top end of the air pumping ring support is connected to the bottom surface of the lower air pumping unit.

Optionally, the bottom surface of the upper air pumping ring is provided with a plurality of upper air vents, and the upper air pumping cavity is connected with each lower air pumping cavity through the upper air vents.

Optionally, the apertures of the upper ventilation holes are the same and are evenly distributed along the circumference of the upper air pumping ring.

Optionally, the lower air extraction units have the same shape and size and are evenly distributed along the circumference of the tray assembly.

Optionally, the top surface of each lower air pumping unit abuts against the bottom surface of the upper air pumping ring, and the top surface of each lower air pumping unit is provided with lower air vents that match the upper air vents, and the number of lower air vents of each lower air pumping unit is the same; and after the air pumping ring assembly is installed, the upper and lower air vents are aligned and connected one by one.

Optionally, each of the lower air pumping units abuts against the bottom surface of the upper air pumping ring, and the bottom surface of the upper air pumping ring serves as the top surface of the lower air pumping cavity; after the air pumping ring assembly is installed, the upper vent is abutted against the lower air pumping cavity.

Optionally, the upper air pumping ring and the lower air pumping unit, and the lower air pumping unit and the exhaust pipe are fixed by crimping.

Optionally, the diameter of each exhaust pipe is the same and is greater than the difference between the inner and outer diameters of the bottom surface of the upper exhaust ring. Each exhaust pipe is arranged at the same position on its corresponding lower exhaust unit.

Optionally, each exhaust pipe is centrally arranged relative to its corresponding lower exhaust unit.

Optionally, the upper air pumping ring also includes an air inlet connected to the inner cavity of the reaction chamber, and the air inlet is an annular port or a plurality of holes evenly distributed in the circumference of the upper air pumping ring.

A vapor deposition device comprises a reaction chamber, a tray assembly and any one of the above-mentioned exhaust ring assemblies; wherein the tray assembly is arranged in the reaction chamber for carrying wafers; the exhaust ring assembly is arranged around the tray assembly in the reaction chamber and connects the inside and outside of the reaction chamber.

Optionally, it also includes an extra-cavity exhaust pipeline and an exhaust pump; wherein the exhaust pump is connected to the bottom end of the exhaust pipe of the exhaust ring assembly through the extra-cavity exhaust pipeline, so as to evenly collect by-products and excess reaction gases from all around the wafer through the exhaust ring assembly and exhaust them out of the reaction chamber.

Optionally, it also includes a compression ring arranged on the top of the exhaust ring assembly for fixing the exhaust ring assembly; wherein the compression ring includes a transmission port arranged on its side wall for serving as a channel for the wafer to enter and exit the process position.

Compared with the known technology, the present invention has the following advantages:

1. By adopting upper and lower separated exhaust ring components, the lower exhaust ring can be designed as a different diameter structure with a narrow top surface and a wide bottom surface in radial width, so that the diameter of the exhaust pipe can be increased without affecting the layout of the components in the cavity, the exhaust rate can be increased, and the interference with the layout of the components in the cavity can be avoided; 2. By adding the lower exhaust ring and increasing the diameter of the exhaust pipe, the number of exhaust pipes can be reduced, thereby reducing the flatness requirements of the end, reducing the processing difficulty and processing cost; 3. By adding the lower exhaust ring, the height of the exhaust ring support is reduced, the temperature difference between its two ends is reduced, and its service life is increased.

01: Air pump ring

02: Exhaust pipe

03: Air pump support

1: Reaction chamber

11: Film transmission port

2: Tray rotation assembly

3: Tray assembly

4: Air intake device

51: Upward suction ring

511: Intake port

52: Lower exhaust unit

53: Exhaust pipe

54: Air pump support

6:Compression ring

61: Transmission port

7: Extracavity exhaust pipeline

8: Heater

In order to more clearly explain the technical solution of the embodiment of the present invention, the following will briefly introduce the drawings required for describing the embodiment. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without making any progressive efforts.

Figure 1 is a front view of a known vacuum ring assembly; Figure 2 is a front cross-sectional view of the vapor deposition apparatus of the present invention; Figure 3 is an oblique view of the vacuum ring assembly of the present invention; Figure 4 is a front cross-sectional view of Figure 3; Figure 5 is an oblique view of the vacuum ring assembly and the compression ring assembly of the present invention.

In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described below in conjunction with the drawings. The described embodiments should not be regarded as limiting the present invention. All other embodiments obtained by persons with ordinary knowledge in the field without making progressive efforts are within the scope of protection of the present invention.

In the following description, "some embodiments" and "one or more embodiments" are mentioned, which describe a subset of all possible embodiments, but it can be understood that "some embodiments" and "one or more embodiments" can be the same subset or different subsets of all possible embodiments, and can be combined with each other without conflict.

In the following description, the terms "first/second/third" are only used to distinguish similar objects and do not represent a specific order of objects. It can be understood that "first/second/third" can be interchanged in a specific order or precedence order where permitted, so that the embodiments of the present invention described here can be implemented in an order other than that illustrated or described.

Unless otherwise defined, all technical and scientific terms used in this article have the same meanings as those commonly understood by those of ordinary skill in the art to which the present invention belongs. The terms used in this article are only for the purpose of describing the embodiments of the present invention and are not intended to limit the present invention.

Combined with Figures 2 to 5, the vacuum ring assembly and vapor deposition equipment of the present invention are described in detail.

FIG2 shows a MOCVD (metal organic chemical vapor deposition) device, which includes a reaction chamber 1 surrounded by a top wall, a bottom wall and a side wall, and a wafer transfer port 11 for wafers to enter and exit the chamber is provided on the side wall of the reaction chamber 1. An air intake device 4 for introducing reaction gas into the reaction chamber 1 is provided at the top of the reaction chamber 1, and a tray assembly 3 for carrying and fixing wafers and a tray rotating assembly 2 at the bottom thereof are provided below the air intake device 4. A heater 8 is provided below the tray assembly 3, which can heat the wafer on the top thereof to a reaction temperature through the tray assembly 3, and then the reaction gas introduced into the reaction chamber 1 from the air intake device 4 reaches the surface of the wafer to undergo a deposition reaction to form a thin film. Furthermore, an exhaust ring assembly (51-54) is arranged around the tray assembly 3 in the reaction chamber 1, and the exhaust pipe 7 and the exhaust pump (not shown) are arranged outside the reaction chamber 1. The exhaust ring assembly (51-54) is connected to the exhaust pump through the exhaust pipe 7. When the exhaust pump is turned on, the exhaust ring assembly (51-54) automatically exhausts the air from the reaction chamber 1. The periphery of the tray assembly 3 sucks byproducts and excess reaction gases and discharges them outside the reaction chamber 1 through the extracavity exhaust pipe 7. The gas distribution can be changed during the exhaust, forming a stable flow field around the wafer carried by the tray assembly 3, so that the reaction gas can be evenly distributed on the surface of the wafer during the deposition process (before being extracted), thereby improving the uniformity of thin film deposition. A clamping ring 6 for fixing the vacuum ring assembly (51-54) is also provided at the top, and a transmission port 61 is provided on the side wall of the clamping ring 6 at a position corresponding to the wafer transmission port 11, which is used as a channel for the wafer to enter and exit the process position.

Specifically, the exhaust ring assembly provided by the present invention is shown in Figures 3 and 4, which includes: an upper exhaust ring 51, a lower exhaust ring, a plurality of exhaust pipes 53 and an exhaust ring support 54. The upper exhaust ring 51, the lower exhaust ring and the exhaust pipe 53 are combined into a closed airway connecting the inside and outside of the reaction chamber 1, which is used to extract byproducts and excess reaction gas from the periphery of the tray assembly 3, and sequentially pass through the upper exhaust chamber of the upper exhaust ring 51, the lower exhaust chambers of the lower exhaust ring and the exhaust pipes to discharge the reaction chamber 1. Among them,

The upper air pumping ring 51 is arranged around the tray assembly 3 in the reaction chamber 1, and its hollow ring body forms an upper air pumping cavity connected to the inner cavity of the reaction chamber 1.

The lower air pumping ring is arranged below the upper air pumping ring 51 in the reaction chamber 1, and includes 2 or 3 arc-shaped lower air pumping units 52 distributed along the circumference of the tray assembly 3. Each of the lower air pumping units 52 is hollow to form a lower air pumping cavity. The lower air pumping cavities are separately arranged, that is, adjacent lower air pumping cavities are not directly connected horizontally, but are connected upward with the upper air pumping cavity, so as to save the manufacturing cost and difficulty of the lower air pumping ring. In some embodiments, the bottom surface of the upper air pumping ring 51 is provided with a plurality of upper air vents, and the upper surface of the lower air pumping cavity is open to form an opening having the same cross-section as the lower air pumping unit 52. When the lower air pumping unit abuts against the lower surface of the upper air pumping ring 51, the upper air pumping cavity is connected with each lower air pumping cavity through the upper air vents, and the lower surface of the upper air pumping ring 51 serves as the upper surface of the lower air pumping cavity. Furthermore, in some embodiments, the top surface of each lower air pumping unit 52 abuts against the bottom surface of the upper air pumping ring 51, and the top surface of each lower air pumping unit 52 is provided with a lower air vent that matches each upper air vent, and the number of lower air vents opened on each lower air pumping unit 52 is the same; after the air pumping ring assembly is installed, each upper and lower air vent is aligned and connected one by one, and the upper air pumping cavity and the lower air pumping cavity are connected through the upper and lower air vents.

The number of the exhaust pipes 53 is consistent with the lower air pumping units 52, and they are arranged one by one under each of the lower air pumping units 52. The top end of each exhaust pipe 53 is connected to the corresponding lower air pumping cavity, and the bottom end is connected to the outside of the reaction chamber 1. Preferably, in some embodiments, the top end of each exhaust pipe 53 is respectively connected to the bottom surface of the corresponding lower air pumping unit 52, and the difference between the inner and outer diameters of the bottom surface of the lower air pumping unit 52 is greater than the difference between the inner and outer diameters of the top surface, that is, the radial width of the bottom surface of the lower air pumping unit 52 is greater than the radial width of the bottom surface of the upper air pumping ring 51. Since the radial width of the bottom surface is increased, the diameter of the exhaust pipe 53 connected thereto can be increased, thereby increasing its air pumping rate; for some situations where the air pumping rate must be increased, only the diameter of the exhaust pipe 53 can be increased without increasing the size of the upper air pumping ring 51 and the compression ring 6 thereon, thereby avoiding interference with the layout of the components in the cavity. Furthermore, since the diameter of the exhaust pipe 53 is increased to improve its single-pipe exhaust rate, the number of exhaust pipes 53 can be further reduced to reduce the flatness requirement of the end and thus reduce the difficulty of processing. Preferably, in some embodiments, there are two lower exhaust units 52 and two exhaust pipes 53. Usually, multiple exhaust pipes 53 are connected in parallel to the same pump. The same number of exhaust pipes as the exhaust units 52 are provided, which can reduce space occupation and ensure that the flow rate allocated to each exhaust pipe is large enough when the pumping force of the pump is constant.

Furthermore, in some embodiments, the upper air pumping ring 51 and the lower air pumping unit 52, and the lower air pumping unit 52 and the exhaust pipe 53 are fixed by crimping, which has low processing difficulty and good sealing effect.

The top of the pumping ring support 54 is connected to the bottom surface of the lower pumping unit 52, and the bottom is supported on the bottom wall of the reaction chamber 1 to support the pumping ring assembly. Since the pumping ring support 54 is arranged below the lower pumping ring, its height is shortened compared to the prior art. The top of the pumping ring support 54 is far away from the upper pumping ring 51 with the highest temperature, thereby reducing the temperature difference between the two ends when the equipment is working, thereby increasing its service life. The present invention does not specifically limit the number of the exhaust ring supports 54, but from the perspective of reducing the difficulty of processing and reducing costs, the fewer the better, provided that the support is stable. In this embodiment, there are two lower exhaust units 52 and four exhaust ring supports 54, and two are evenly arranged below each lower exhaust unit 52. The present invention does not specifically limit the fixing method between the exhaust ring support 54 and the bottom surface of the lower exhaust unit 52.

Since the uniformity of pumping by-products and excess reaction gas will affect the uniformity of film deposition, the air duct of the vacuum ring assembly needs to meet the requirements of vacuum uniformity. Preferably, in some embodiments, the upper vacuum ring 51 connects the inner cavity of the reaction chamber 1 with its upper vacuum chamber through the suction port 511 (Figure 5), and the suction port 511 is an annular port opened on the outer wall of the upper vacuum ring 51 or a plurality of holes uniformly distributed along the circumference of the upper vacuum ring, so that the air duct from the inner cavity of the reaction chamber 1 to the upper vacuum chamber meets the requirements of vacuum uniformity. Furthermore, in some embodiments, each upper vent hole of the upper air pumping ring 51 is aligned and connected with each lower vent hole of the lower air pumping unit 52, and each upper vent hole has the same aperture and is evenly distributed along the circumference of the upper air pumping ring 51, so that the airway between the upper air pumping cavity and the lower air pumping cavity meets the air pumping uniformity requirement. Furthermore, in some embodiments, each lower air pumping unit 52 has the same shape and size and is evenly distributed along the circumference of the tray assembly 3, so that each lower air pumping cavity meets the air pumping uniformity requirement. Furthermore, in some embodiments, the diameters of the exhaust pipes 53 are the same, and the exhaust pipes 53 are arranged at the same position on the corresponding lower exhaust unit 52, so that the exhaust pipes 53 meet the exhaust uniformity requirements; preferably, the exhaust pipes 53 are arranged centrally relative to the corresponding lower exhaust unit 52.

The working principle of the vacuum ring assembly of the present invention is: the vacuum pump generates negative pressure by vacuuming, so that the byproducts and excess reaction gases generated during the process in the reaction chamber 1 are uniformly sucked and discharged from the reaction chamber 1 from the periphery of the tray assembly 3 through the suction port 511-upper vacuum chamber-upper and lower vents-lower vacuum chambers-exhaust pipes 53-exhaust pipes 7 outside the cavity-closed air channel of the vacuum pump; at the same time, because the closed air channel is evenly distributed, the speed of the vacuuming is uniform, and a stable flow field is formed on the periphery of the wafer, so that the reaction gas is evenly distributed on the surface of the wafer during the deposition process, thereby improving the uniformity of thin film deposition.

In addition, as shown in FIG. 2 , the present invention further provides a vapor deposition device, comprising: a reaction chamber 1; a tray assembly 3, disposed in the reaction chamber 1, for carrying a wafer; any one of the above-mentioned exhaust ring assemblies, disposed around the tray assembly 3 in the reaction chamber 1, and connected to the inside and outside of the chamber of the reaction chamber 1; an extra-cavity exhaust pipeline 7 and an exhaust pump, the exhaust pump being connected to the exhaust pump through the extra-cavity exhaust pipeline 7. The bottom end of the exhaust pipe 53 of the ring assembly is connected to evenly collect byproducts and excess reaction gas from all around the wafer through the exhaust ring assembly and discharge them out of the reaction chamber 1; and, as shown in FIG5 , a compression ring 6 is arranged on the top of the exhaust ring assembly to fix the exhaust ring assembly; wherein the compression ring 6 includes a transmission port 61 arranged on the side wall, which is used as a channel for the wafer to enter and exit the process position.

The MOCVD equipment in this embodiment is only used as an example. The vacuum ring assembly and vapor deposition equipment of the present invention are applicable to any vapor deposition equipment.

The above is only an embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and scope of the present invention are included in the scope of protection of the present invention.

51: Upward suction ring

52: Lower exhaust unit

53: Exhaust pipe

54: Air pump support

Claims (15)

A vacuum ring assembly for use in a vapor deposition device, the vapor deposition device comprising a reaction chamber and a tray assembly located in the reaction chamber for carrying wafers, wherein the vacuum ring assembly comprises: an upper vacuum ring, arranged around the tray assembly in the reaction chamber, the ring body of which is hollow to form an upper vacuum chamber connected to the reaction chamber; a lower vacuum ring, arranged below the upper vacuum ring in the reaction chamber, comprising two or three arc-shaped lower vacuum units distributed along the circumference of the tray assembly, each of the lower vacuum units being hollow to form a lower vacuum chamber, each of the lower vacuum chambers being separately arranged and connected to the upper vacuum chamber respectively; and, Exhaust pipes of the same number as the lower air pumping units are arranged one by one under each of the lower air pumping units, the top of each exhaust pipe is connected to the corresponding lower air pumping cavity, the bottom is connected to the outside of the reaction cavity, and the difference between the inner and outer diameters of the bottom surface of the lower air pumping unit is greater than the difference between the inner and outer diameters of the bottom surface of the upper air pumping ring; The upper air pumping ring, the lower air pumping ring and the exhaust pipe are combined to form an airway connecting the inside and outside of the reaction cavity. As described in claim 1, the exhaust ring assembly, wherein the top end of each exhaust pipe is connected to the bottom surface of the corresponding lower exhaust unit. As described in claim 1, the exhaust ring assembly further comprises an exhaust ring support, the top end of the exhaust ring support is connected to the bottom surface of the lower exhaust unit. As described in claim 1, the exhaust ring assembly, wherein, the bottom surface of the upper exhaust ring is provided with a plurality of upper vents, and the upper exhaust cavity is connected with each lower exhaust cavity through the upper vents. As described in claim 4, the exhaust ring assembly, wherein, the apertures of the upper vent holes are the same and are evenly distributed along the circumference of the upper exhaust ring. As described in claim 5, the exhaust ring assembly, wherein, the lower exhaust units are of the same shape and size and are evenly distributed along the circumference of the tray assembly. As described in claim 6, the exhaust ring assembly, wherein, the top surface of each lower exhaust unit abuts against the bottom surface of the upper exhaust ring, the top surface of each lower exhaust unit is provided with a lower vent hole matching each upper vent hole, and the number of lower vent holes of each lower exhaust unit is the same; and, after the exhaust ring assembly is installed, each upper and lower vent hole is aligned and connected one by one. As described in claim 6, the exhaust ring assembly, wherein, each of the lower exhaust units abuts against the bottom surface of the upper exhaust ring, and the bottom surface of the upper exhaust ring serves as the top surface of the lower exhaust cavity; after the exhaust ring assembly is installed, the upper vent is butted against the lower exhaust cavity. As described in claim 7, the exhaust ring assembly, wherein, the upper exhaust ring and the lower exhaust unit, and the lower exhaust unit and the exhaust pipe are fixed by crimping. As described in claim 2, the exhaust ring assembly, wherein, the diameter of each exhaust pipe is the same and is larger than the difference between the inner and outer diameters of the bottom surface of the upper exhaust ring, and each exhaust pipe is arranged at the same position on its corresponding lower exhaust unit. As described in claim 10, the exhaust ring assembly, wherein each exhaust pipe is centrally arranged relative to its corresponding lower exhaust unit. As described in claim 1, the upper air pumping ring assembly, wherein, the upper air pumping ring further comprises an air suction port connected to the inner cavity of the reaction chamber, and the air suction port is an annular port or a plurality of holes evenly distributed in the circumference of the upper air pumping ring. A vapor deposition device, characterized in that it includes a reaction chamber, a tray assembly and an exhaust ring assembly as described in any one of claims 1 to 12; wherein, the tray assembly is arranged in the reaction chamber for carrying a wafer; the exhaust ring assembly is arranged around the tray assembly in the reaction chamber and connects the inside and outside of the reaction chamber. The vapor deposition equipment as described in claim 13, wherein, it also includes an extra-cavity exhaust pipeline and an exhaust pump; wherein, the exhaust pump is connected to the bottom end of the exhaust pipe of the exhaust ring assembly through the extra-cavity exhaust pipeline, so as to collect by-products and excess reaction gases uniformly from all around the wafer through the exhaust ring assembly and exhaust them out of the reaction chamber. The vapor deposition apparatus as described in claim 13, wherein, it also includes a compression ring disposed on the top of the vacuum ring assembly for fixing the vacuum ring assembly; wherein, the compression ring includes a transfer port disposed on its side wall for serving as a channel for wafers to be moved into or out of the tray assembly.