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TWI886570B - Pelletized metal-decorated materials - Google Patents

Pelletized metal-decorated materials Download PDF

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TWI886570B
TWI886570B TW112134605A TW112134605A TWI886570B TW I886570 B TWI886570 B TW I886570B TW 112134605 A TW112134605 A TW 112134605A TW 112134605 A TW112134605 A TW 112134605A TW I886570 B TWI886570 B TW I886570B
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metal
carbon
graphene
particles
plasma
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TW112134605A
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TW202415470A (en
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麥克 史都維爾
羅倫 星科
丹尼爾 雅各布森
布魯斯 藍寧
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美商萊登股份有限公司
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Priority claimed from US17/957,989 external-priority patent/US11873563B2/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/12Metallic powder containing non-metallic particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/115Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C49/00Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C26/00Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C22C2026/002Carbon nanotubes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)

Abstract

Inventive techniques for forming unique compositions of matter are disclosed, as well as various advantageous physical characteristics, and associated properties of the resultant materials. In particular, metal(s) (including various alloys, such as Inconel superalloys) are characterized by having carbon disposed within the metal lattice structure thereof. The carbon is primarily, or entirely, present at interstitial sites of the metal lattice, and may be present in amounts ranging from about 15 wt% to about 90 wt%. The carbon, moreover, forms non-polar covalent bonds with both metal atoms of the lattice and other carbon atoms present in the lattice. This facilitates substantially homogeneous dispersal of the carbon throughout the resultant material, conveying unique and advantageous properties such as strength-to-weight ratio, density, mechanical toughness, sheer strength, flex strength, hardness, anti-corrosiveness, electrical and/or thermal conductivity, etc. as described herein. In some approaches, the composition of matter may be powderized, or the powder may be pelletized.

Description

丸粒狀金屬裝飾材料Pelletized Metal Decorative Materials

本揭示案大體上係關於在感應熔化爐中製造及使用含碳合金。 The present disclosure generally relates to the production and use of carbon-containing alloys in induction melting furnaces.

特種合金係在真空感應熔化(VIM)爐中熔煉。此類VIM爐之坩堝用於熔化及混合各種混合物組分(例如,金屬及非金屬)。一旦金屬之各種組合混合,便可將熔體丟到(例如,倒入)模具中並冷卻。一些混合物包括粉末狀之成分。遺憾的係,來自VIM爐之感應線圈的電動勢作用於粉末以使粉末自VIM爐噴出。如此阻止粉末與其他成分之混合。需要用於在真空感應熔化爐中使用粉末狀成分的改良之方法。 Specialty alloys are melted in vacuum induction melting (VIM) furnaces. The crucible of such VIM furnaces is used to melt and mix the various mixture components (e.g., metals and non-metals). Once the various combinations of metals are mixed, the melt can be dropped (e.g., poured) into a mold and cooled. Some mixtures include powdered ingredients. Unfortunately, the electromotive force from the induction coil of the VIM furnace acts on the powder to cause the powder to eject from the VIM furnace. This prevents the powder from mixing with other ingredients. Improved methods for using powdered ingredients in vacuum induction melting furnaces are needed.

如本文所用,術語「covetic材料」係指含有奈米級大小之碳顆粒的金屬。covetic材料在各種應用中係所要的,因為covetic材料擁有超過傳統非含碳材料之能力的許多物理、化學及電性質。 As used herein, the term "covetic material" refers to a metal containing nano-sized carbon particles. Covetic materials are desirable in a variety of applications because they possess many physical, chemical, and electrical properties that exceed the capabilities of traditional non-carbon-containing materials.

提供本發明內容係為了以簡化形式介紹下文在具體實施方式中進一步描述之一系列概念。本發明內容不意欲標識要求保護之主題的關鍵特徵或必要特徵,亦不意欲限制要求保護之主題的範疇。此外,本揭示案之系統、方法及裝置各自具有若干創新態樣,該等創新態樣中之單個態樣不僅僅負責本文所揭示之所要屬性。 The content of the present invention is provided to introduce a series of concepts further described in the specific implementation below in a simplified form. The content of the present invention is not intended to identify the key features or essential features of the subject matter claimed for protection, nor is it intended to limit the scope of the subject matter claimed for protection. In addition, the systems, methods, and devices of the present disclosure each have several innovative aspects, and a single aspect of these innovative aspects is not only responsible for the desired properties disclosed herein.

本文揭示之主題的各個實施方式大體上係關於碳-金屬複合材料之設備、方法及各種組合物。示出並討論之設備可能與電漿噴塗炬設備之受控使用有關,以產生各種碳-金屬鍵合之物質組合物,該碳-金屬鍵合之物質組合物在 本揭示案中通常被稱為「covetic材料」。在一些情況下,該等材料為金屬裝飾碳。在一些情況下,該等材料為碳裝飾金屬。在其他態樣中,如下文更詳細地描述,碳可能與除金屬外之材料(諸如陶瓷、塑膠、複合材料、矽等)組合。 Various embodiments of the subject matter disclosed herein generally relate to apparatus, methods, and various compositions of carbon-metal composite materials. The apparatus shown and discussed may be associated with the controlled use of a plasma spray torch apparatus to produce various carbon-metal bonded compositions of matter, which are generally referred to as "covetic materials" in this disclosure. In some cases, the materials are metal-decorated carbon. In some cases, the materials are carbon-decorated metal. In other aspects, as described in more detail below, carbon may be combined with materials other than metals (such as ceramics, plastics, composites, silicon, etc.).

電漿噴塗炬之一種組態體現為具有反應室、微波能量源及控制器之設備,該反應室經組態以收納與複數個熔融金屬奈米級大小之顆粒混合的烴製程氣體,該微波能量源操作性地耦接至該反應室以向該反應室提供動力,該控制器用於調整該微波能量源以在反應室中創造條件,使得該烴製程氣體離解成其組成碳原子,且單層石墨烯(SLG)或少層石墨烯(FLG)自該等碳原子生長至該等熔融金屬奈米級大小之顆粒上,以形成複數個碳-金屬奈米級大小之顆粒。在一些組態中,該反應室中之條件引起:(i)第一溫度,碳原子在該第一溫度下溶解到熔融金屬奈米級大小之顆粒中;及(ii)第二溫度,溶解之碳原子中的至少一些碳原子在該第二溫度下以某一晶體構型與該熔融金屬組合。該設備之一些組態利用冷卻區域來將該複數個碳-金屬奈米級大小之顆粒冷卻為粉末形式,該粉末形式可被收集並儲存在接近該反應室且與該反應室並置之貯存容器中。 One configuration of a plasma spraying torch is embodied as an apparatus having a reaction chamber configured to receive a hydrocarbon process gas mixed with a plurality of molten metal nanoscale-sized particles, a microwave energy source operatively coupled to the reaction chamber to provide power to the reaction chamber, and a controller for adjusting the microwave energy source to create conditions in the reaction chamber such that the hydrocarbon process gas dissociates into its constituent carbon atoms and single-layer graphene (SLG) or few-layer graphene (FLG) grows from the carbon atoms onto the molten metal nanoscale-sized particles to form a plurality of carbon-metal nanoscale-sized particles. In some configurations, conditions in the reaction chamber cause: (i) a first temperature at which carbon atoms dissolve into molten metal nano-sized particles; and (ii) a second temperature at which at least some of the dissolved carbon atoms combine with the molten metal in a crystalline configuration. Some configurations of the apparatus utilize a cooling zone to cool the plurality of carbon-metal nano-sized particles into a powder form that can be collected and stored in a storage container proximate to and juxtaposed with the reaction chamber.

根據各種實施方式,目前揭示之發明構思可體現為具有以下物理及/或結構特性及相關聯性質中之任一者的物質組合物。此外,根據不同實施例,此等特性及/或性質可按不同組合或排列來包括,但不作限制。 According to various embodiments, the inventive concept disclosed herein may be embodied as a composition of matter having any of the following physical and/or structural characteristics and associated properties. In addition, according to different embodiments, these characteristics and/or properties may be included in different combinations or arrangements, but are not limited.

在一個態樣中,一種物質組合物包含一或多個顆粒,且每一顆粒獨立地包含一金屬晶格,該金屬晶格具有設置於其中的一或多個相干的平面石墨烯層。較佳地,該一或多個相干的平面石墨烯層之至少一些碳原子設置於該金屬晶格內之間隙位點中。更佳地,該一或多個相干的平面石墨烯層有間隙地交錯在該晶格之基面之間。石墨烯可作為單層(例如,「單層石墨烯」或「SLG」)或多個層(例如,兩個層、三個層、五個層、十個層或任何數目個層直至十五個,本文亦稱為「少層石墨烯」或「FLG」)存在。該一或多個石墨烯層之至少一些 碳原子共價鍵合至金屬晶格之金屬原子,且碳原子與金屬原子之間的共價鍵為非極性共價鍵或包括非極性共價鍵。在一些實施例中,該等共價鍵可基本上由或完全由非極性共價鍵組成。類似地,該一或多個石墨烯層之碳原子可共價鍵合至該一或多個石墨烯層之其他碳原子,且根據不同實施方式,此等共價鍵可包括非極性共價鍵、基本上由非極性共價鍵組成或完全由非極性共價鍵組成。因此,該一或多個顆粒可實質上或完全不包括極性共價鍵。同樣地,每一顆粒之金屬晶格可實質上或完全不包括離子鍵。該一或多個石墨烯層各自較佳地實質上沒有缺陷,使得石墨烯係「原始的」。較佳地,每一顆粒之特徵亦在於在晶界處及/或在金屬晶格之表面處實質上缺少或更佳地完全缺少碳聚集體及/或團聚物。由於本文描述之創新處理技術,顆粒之總碳載量的範圍可為約15wt%至約90wt%,亦展示了各種中間載量(例如,在各種實施方式中,約20wt%、約25wt%、約33wt%、約40wt%、約50wt%、約60wt%、約75wt%或直至90wt%)。此外,該等顆粒之特徵可在於在約20nm至約3.5μm之範圍內的直徑,及/或具有在約0.1nm至約1μm之範圍內的最大可辨別特徵大小。在一些實施方式中,該等顆粒可被壓制成丸粒。 In one aspect, a composition of matter comprises one or more particles, and each particle independently comprises a metal lattice having one or more coherent planar graphene layers disposed therein. Preferably, at least some of the carbon atoms of the one or more coherent planar graphene layers are disposed in interstitial sites within the metal lattice. More preferably, the one or more coherent planar graphene layers are interstitially interlaced between basal planes of the lattice. Graphene can exist as a single layer (e.g., "single-layer graphene" or "SLG") or multiple layers (e.g., two layers, three layers, five layers, ten layers, or any number of layers up to fifteen, also referred to herein as "few-layer graphene" or "FLG"). At least some of the carbon atoms of the one or more graphene layers are covalently bonded to metal atoms of the metal lattice, and the covalent bonds between the carbon atoms and the metal atoms are non-polar covalent bonds or include non-polar covalent bonds. In some embodiments, the covalent bonds may consist essentially of or entirely of non-polar covalent bonds. Similarly, the carbon atoms of the one or more graphene layers may be covalently bonded to other carbon atoms of the one or more graphene layers, and according to different embodiments, these covalent bonds may include non-polar covalent bonds, consist essentially of non-polar covalent bonds, or consist entirely of non-polar covalent bonds. Therefore, the one or more particles may include substantially or entirely no polar covalent bonds. Likewise, the metal lattice of each particle may include substantially or completely no ionic bonds. The one or more graphene layers are each preferably substantially free of defects, such that the graphene is "pristine". Preferably, each particle is also characterized by a substantial lack or more preferably a complete lack of carbon aggregates and/or agglomerates at the grain boundaries and/or at the surface of the metal lattice. Due to the innovative processing techniques described herein, the total carbon loading of the particles can range from about 15 wt % to about 90 wt %, with various intermediate loadings also being shown (e.g., in various embodiments, about 20 wt %, about 25 wt %, about 33 wt %, about 40 wt %, about 50 wt %, about 60 wt %, about 75 wt % or up to 90 wt %). Additionally, the particles may be characterized by a diameter in the range of about 20 nm to about 3.5 μm, and/or have a maximum discernible feature size in the range of about 0.1 nm to about 1 μm. In some embodiments, the particles may be pressed into pellets.

根據另一個態樣,一種物質組合物包括英高鎳合金,該英高鎳合金具有設置於其晶格中之碳。較佳地,該等碳中之至少一些設置於該金屬晶格之間隙位點處,且更佳地,碳實質上均勻地分散於該金屬晶格中。此外,在一些實施方式中,該物質組合物之晶界及/或金屬晶格之表面實質上沒有碳聚集體及/或團聚物。因此,該物質組合物之最大可辨別特徵大小可在約0.1nm至約1μm之範圍內。至少一些碳原子共價鍵合至該金屬晶格之金屬原子,且碳原子與金屬原子之間的共價鍵為非極性共價鍵或包括非極性共價鍵。在一些實施例中,該等共價鍵可基本上由或完全由非極性共價鍵組成。類似地,碳原子可共價鍵合至其他碳原子,且根據不同實施方式,此等共價鍵可包括非極性共價鍵、基 本上由非極性共價鍵組成或完全由非極性共價鍵組成。因此,該一或多種物質組合物可實質上或完全不包括極性共價鍵。同樣地,金屬晶格可實質上或完全不包括離子鍵。 According to another aspect, a composition of matter includes an inconel nickel alloy having carbon disposed in its crystal lattice. Preferably, at least some of the carbon is disposed at interstitial sites of the metal lattice, and more preferably, the carbon is substantially uniformly dispersed in the metal lattice. Furthermore, in some embodiments, the grain boundaries of the composition of matter and/or the surfaces of the metal lattice are substantially free of carbon aggregates and/or agglomerates. Thus, the maximum discernible feature size of the composition of matter can be in the range of about 0.1 nm to about 1 μm. At least some of the carbon atoms are covalently bonded to metal atoms of the metal lattice, and the covalent bonds between the carbon atoms and the metal atoms are or include non-polar covalent bonds. In some embodiments, the covalent bonds may consist essentially of or consist entirely of non-polar covalent bonds. Similarly, carbon atoms may covalently bond to other carbon atoms, and depending on the embodiment, such covalent bonds may include, consist essentially of, or consist entirely of non-polar covalent bonds. Thus, the one or more compositions of matter may consist essentially of or consist entirely of polar covalent bonds. Similarly, a metal lattice may consist essentially of or consist entirely of ionic bonds.

根據又一個態樣,一種物質組合物包括一金屬晶格,該金屬晶格中設置有至少約15wt%碳。較佳地,該碳中之至少一些設置於該金屬晶格之間隙位點處,且更佳地,碳實質上均勻地分散於該金屬晶格中。此外,在一些實施方式中,該物質組合物之晶界及/或金屬晶格之表面實質上沒有碳聚集體及/或團聚物。因此,該物質組合物之最大可辨別特徵大小可在約0.1nm至約1μm之範圍內。至少一些碳原子共價鍵合至該金屬晶格之金屬原子,且碳原子與金屬原子之間的共價鍵為非極性共價鍵或包括非極性共價鍵。在一些實施例中,該等共價鍵可基本上由或完全由非極性共價鍵組成。類似地,根據不同實施方式,碳原子可共價鍵合至其他碳原子,且此等共價鍵可包括非極性共價鍵、基本上由非極性共價鍵組成或完全由非極性共價鍵組成。因此,該一或多種物質組合物可實質上或完全不包括極性共價鍵。同樣地,金屬晶格可實質上或完全不包括離子鍵。 According to another aspect, a composition of matter includes a metal lattice having at least about 15 wt% carbon disposed therein. Preferably, at least some of the carbon is disposed at interstitial sites of the metal lattice, and more preferably, the carbon is substantially uniformly dispersed in the metal lattice. Furthermore, in some embodiments, the grain boundaries of the composition of matter and/or the surfaces of the metal lattice are substantially free of carbon aggregates and/or agglomerates. Thus, the maximum discernible feature size of the composition of matter may be in the range of about 0.1 nm to about 1 μm. At least some of the carbon atoms are covalently bonded to metal atoms of the metal lattice, and the covalent bonds between the carbon atoms and the metal atoms are or include non-polar covalent bonds. In some embodiments, the covalent bonds may consist essentially of or consist entirely of non-polar covalent bonds. Similarly, depending on the embodiment, carbon atoms may be covalently bonded to other carbon atoms, and such covalent bonds may include, consist essentially of, or consist entirely of non-polar covalent bonds. Thus, the one or more compositions of matter may include essentially or entirely no polar covalent bonds. Similarly, a metal lattice may include essentially or entirely no ionic bonds.

在前述態樣之各種實施方式中,該金屬晶格可包括選自由以下各者組成之群中的一或多種金屬:鋁、銅、鐵、鎳、鈦、鉭、鎢、鉻、鉬、鈷、錳、鈮及其組合。因此,金屬晶格之特徵可在於晶體結構,諸如面心立方(FCC)、體心立方(BCC)或六方密積(HCC)。此外,金屬晶格可包含約15wt%至約90wt%之碳(例如,在各種實施方式中,約20wt%、約25wt%、約33wt%、約40wt%、約50wt%、約60wt%、約75wt%或直至90wt%)。碳較佳地存在於金屬晶格之間隙位點處。在一些方法中,金屬可以合金形式存在。例如,在特別較佳之方法中,金屬可以一或多種英高鎳合金之形式存在,諸如Inconel 600、Inconel 617、Inconel 625、Inconel 690、Inconel 718及/或Inconel X-750。更佳地,英高鎳合金 為超合金。 In various embodiments of the foregoing aspects, the metal lattice may include one or more metals selected from the group consisting of aluminum, copper, iron, nickel, titanium, tungsten, chromium, molybdenum, cobalt, manganese, niobium, and combinations thereof. Thus, the metal lattice may be characterized by a crystal structure such as face-centered cubic (FCC), body-centered cubic (BCC), or hexagonal close-packed (HCC). In addition, the metal lattice may include about 15 wt % to about 90 wt % carbon (e.g., about 20 wt %, about 25 wt %, about 33 wt %, about 40 wt %, about 50 wt %, about 60 wt %, about 75 wt %, or up to 90 wt % in various embodiments). The carbon is preferably present at interstitial sites of the metal lattice. In some methods, the metal may be present in alloy form. For example, in particularly preferred methods, the metal may be in the form of one or more Inconel nickel alloys, such as Inconel 600, Inconel 617, Inconel 625, Inconel 690, Inconel 718 and/or Inconel X-750. More preferably, the Inconel nickel alloy is a superalloy.

下文在附圖及說明書中闡述了本揭示案中描述之主題的一或多個實施方式之詳細內容。根據本說明書、附圖以申請專利範圍,其他特徵、態樣及優點將變得顯而易見。應注意,以下圖之相對尺寸可能不按比例繪製。 The following drawings and specification describe in detail one or more embodiments of the subject matter described in this disclosure. Other features, aspects, and advantages will become apparent from the specification, drawings, and claims. It should be noted that the relative dimensions of the following drawings may not be drawn to scale.

105:影像 105: Image

106:均質性影像 106: Homogeneous image

114:高解析度透射電子顯微術影像 114: High-resolution transmission electron microscopy images

116:高解析度能量色散光譜x射線影像 116: High-resolution energy dispersive spectroscopy x-ray imaging

500:雙電漿炬設備 500:Dual plasma torch equipment

600:脈衝微波電漿噴塗炬設備 600: Pulsed microwave plasma spraying torch equipment

604:額外端口 604: Additional port

605:烴製程氣體 605: Hydrocarbon process gas

900:掃描電子顯微鏡影像 900: Scanning electron microscope image

1100:電漿火焰設備 1100: Plasma flame equipment

1202:製程氣體端口 1202: Process gas port

12031:額外端口 1203 1 : Additional port

12032:額外端口 1203 2 : Additional port

1204:入口 1204:Entrance

1300:脈衝微波電漿噴塗波導設備 1300: Pulsed microwave plasma spraying waveguide equipment

1600:電漿噴塗設備 1600: Plasma spraying equipment

1700:表面波電漿系統 1700:Surface wave plasma system

1803:生長板 1803: Growth plate

1810:軸向場組態 1810: Axial field configuration

1812:輸入氣體 1812: Gas input

1814:電漿火焰 1814: Plasma Flame

1816:基板 1816:Substrate

1818:金屬及/或碳顆粒 1818: Metal and/or carbon particles

1820:徑向場組態 1820: Radial field configuration

1821:加速區域 1821: Acceleration zone

1822:微波能量 1822: Microwave energy

1823:碰撞區域 1823: Collision zone

1824:淬火層 1824: Quenching layer

1862:輸入端口 1862: Input port

2052:碳 2052: Carbon

2054:銅 2054: Copper

2062:頂表面區域 2062: Top surface area

2064:covetic材料區域 2064: covetic material area

2066:本體金屬區域 2066: Main metal area

2072:更高碳含量區域 2072: Area with higher carbon content

2074:更高金屬含量區域 2074: Area with higher metal content

2104:第一區域 2104: First Area

2106:第二區域 2106: Second Area

2108:金屬熔體 2108: Molten metal

2110:微波反應器之出口 2110: Microwave reactor outlet

2112:噴塗材料 2112:Spraying materials

2114:所得沉積材料 2114: Obtained deposition material

2116:目標基板 2116:Target substrate

2209:熔化設備 2209: Melting equipment

2310:撓性基板 2310:Flexible substrate

26E00:covetic材料 26E00: covetic material

27A00:產生粉末狀covetic材料之例示性設備 27A00: Exemplary apparatus for producing powdered covetic material

27B00:流化床設備 27B00: Fluidized bed equipment

2702:冷卻區域 2702: Cooling area

2704:收集容器 2704: Collection container

2710:粉末狀covetic材料 2710: Powdered covetic material

2750:流化床 2750: Fluidized bed

2752:電源 2752: Power supply

27561:第一粉末 2756 1 : First Powder

27562:第二粉末 2756 2 : Second Powder

2760:熱源 2760:Heat source

2762:錐形主體 2762: Cone-shaped body

3002:真空環境 3002: Vacuum environment

3004:粉末狀材料 3004: Powdered material

3006:高功率電流產生源 3006: High power current generator

3008:丸粒 3008: Pellets

3102:氣-固分離器容器 3102: Gas-solid separator container

3104:粉末狀材料 3104: Powdered materials

3106:造粒機 3106: Granulator

3106a:模具 3106a:Mold

3108:丸粒 3108: Pellets

3108a:天然石墨烯 3108a: Natural graphene

3108b:金屬裝飾碳 3108b:Metallic decorative carbon

3110:VIM處理器 3110:VIM processor

3112:所得熔體 3112: The resulting melt

3202:模具 3202: Mould

本文揭示之主題的實施方式以舉例方式展示,且不欲受到附圖中之圖的限制。在整個附圖及說明書中,相似元件符號表示相似元件。應注意,以下圖之相對尺寸可能不按比例繪製。 The implementation of the subject matter disclosed herein is shown by way of example and is not intended to be limited by the figures in the accompanying drawings. Throughout the drawings and the specification, like element symbols represent like elements. It should be noted that the relative dimensions of the following figures may not be drawn to scale.

圖1A為根據一些實施方式的示出了兩種不同之covetic材料形成技術及分別由應用該等covetic材料形成技術中之每種技術產生之例示性材料的比較圖。 FIG. 1A is a comparative diagram showing two different covetic material forming techniques and exemplary materials produced by applying each of the covetic material forming techniques, according to some embodiments.

圖1B呈現了根據一些實施方式的根據本文描述之創新技術生產的材料(例如,covetic材料)之高解析度透射電子顯微術影像及高解析度能量色散光譜x射線影像。 FIG. 1B presents a high-resolution transmission electron microscopy image and a high-resolution energy dispersive spectroscopy x-ray image of a material (e.g., a covetic material) produced according to the innovative techniques described herein, according to some embodiments.

圖2描繪了根據所揭示之實施方式中之一或多個實施方式的用於將石墨烯生長至小熔融顆粒上之製造製程。 FIG. 2 depicts a fabrication process for growing graphene onto small molten particles according to one or more of the disclosed embodiments.

圖3描繪了根據所揭示之實施方式中之一或多個實施方式的電漿能量狀態圖,該電漿能量狀態圖示出了如何使用脈衝微波能量源來將石墨烯生長至小熔融顆粒上。 FIG. 3 depicts a plasma energy profile diagram showing how a pulsed microwave energy source may be used to grow graphene onto small molten particles in accordance with one or more of the disclosed embodiments.

圖4描繪了根據所揭示之實施方式中之一或多個實施方式的用於將石墨烯生長至小熔融顆粒上之電子溫度控制技術。 FIG. 4 depicts an electronic temperature control technique for growing graphene onto small molten particles according to one or more of the disclosed embodiments.

圖5展示了根據所揭示之實施方式中之一或多個實施方式的用於將石墨烯生長至小熔融顆粒上之雙電漿炬設備。 FIG5 illustrates a dual plasma torch apparatus for growing graphene onto small molten particles according to one or more of the disclosed embodiments.

圖6展示了根據所揭示之實施方式中之一或多個實施方式的經調整以用於將石墨烯生長至小熔融顆粒上之脈衝微波電漿噴塗炬設備。 FIG6 shows a pulsed microwave plasma spray torch apparatus adapted for growing graphene onto small molten particles according to one or more of the disclosed embodiments.

圖7為根據所揭示之實施方式中之一或多個實施方式的描繪了與covetic(或相關材料)、電漿炬噴塗及/或穩健之合成複合碳塗層相關聯的共同主題領域之交集的圖。 FIG. 7 is a diagram depicting the intersection of common subject areas associated with covetic (or related materials), plasma torch coating, and/or robust synthetic composite carbon coatings according to one or more of the disclosed embodiments.

圖8A-B為根據所揭示之實施方式中之一或多個實施方式的描繪了用於將碳顆粒噴塗至小熔融顆粒上之電漿噴塗製程的示意圖。 8A-B are schematic diagrams depicting a plasma spraying process for spraying carbon particles onto small molten particles according to one or more of the disclosed embodiments.

圖9為根據所揭示之實施方式中之一或多個實施方式的示出了將碳顆粒噴塗至小熔融顆粒上之效果的掃描電子顯微鏡影像。 FIG. 9 is a scanning electron microscope image showing the effect of spraying carbon particles onto small molten particles according to one or more of the disclosed embodiments.

圖10示出了根據所揭示之實施方式中之一或多個實施方式的描繪了石墨烯生長溫度曲線圖之圖及二元相圖。 FIG. 10 shows a graph depicting a graphene growth temperature curve and a binary phase diagram according to one or more of the disclosed embodiments.

圖11為習知電漿火焰設備之橫截面視圖。 Figure 11 is a cross-sectional view of a conventional plasma flame device.

圖12描繪了根據所揭示之實施方式中之一或多個實施方式的在將石墨烯生長至小熔融顆粒上時使用之脈衝微波製程流程。 FIG. 12 depicts a pulsed microwave process flow for use in growing graphene onto small molten particles according to one or more of the disclosed embodiments.

圖13為用於將石墨烯生長至小熔融顆粒上之習知脈衝微波電漿噴塗波導設備的透視圖。 Figure 13 is a perspective view of a conventional pulsed microwave plasma spraying waveguide apparatus for growing graphene onto small molten particles.

圖14為根據所揭示之實施方式中之一或多個實施方式的用於將石墨烯生長至小熔融顆粒上之微焊接技術的示意性描繪。 FIG. 14 is a schematic depiction of a micro-welding technique for growing graphene onto small molten particles according to one or more of the disclosed embodiments.

圖15為根據所揭示之實施方式中之一或多個實施方式的呈同軸組態之電漿噴塗設備的示意性描繪。 FIG. 15 is a schematic depiction of a plasma spraying apparatus in a coaxial configuration according to one or more of the disclosed embodiments.

圖16為根據所揭示之實施方式中之一或多個實施方式的示出了藉由經歷一系列非平衡能量條件進行加工之材料之演變的電漿噴塗設備的示意性描繪。 FIG. 16 is a schematic depiction of a plasma spraying apparatus showing the evolution of a material being processed by undergoing a series of non-equilibrium energy conditions according to one or more of the disclosed embodiments.

圖17描繪了根據所揭示之實施方式中之一或多個實施方式的用於將石墨烯生長至熔融顆粒上之表面波電漿系統。 FIG. 17 depicts a surface wave plasma system for growing graphene onto molten particles according to one or more of the disclosed embodiments.

圖18A1-2、圖18B、圖18C及圖18D描繪了根據所揭示之實施方式中之一或多個實施方式的電漿噴塗反應器之各種組態。 Figures 18A1-2, 18B, 18C, and 18D depict various configurations of a plasma spray reactor according to one or more of the disclosed embodiments.

圖19為根據所揭示之實施方式中之一或多個實施方式的描繪了脈衝接通及脈衝斷開期間能量對時間之圖。 FIG. 19 is a graph depicting energy versus time during pulse on and pulse off according to one or more of the disclosed embodiments.

圖20A1為根據所揭示之實施方式中之一些實施方式的描繪了在使用電漿噴塗炬將碳與銅組合時發生之有機金屬鍵合的影像。 FIG. 20A1 is an image depicting organometallic bonding that occurs when combining carbon and copper using a plasma spray torch according to some of the disclosed embodiments.

圖20A2為根據所揭示之實施方式中之一些實施方式的描繪施加至基板材料中之分級物質組合物且示出多個(諸如三個)材料性質區域的影像。 FIG. 20A2 is an image of a graded material composition applied to a substrate material and showing multiple (e.g., three) material property regions according to some of the disclosed embodiments.

圖20B為根據所揭示之實施方式中之一或多個實施方式的描繪了當將碳添加到本體鋁時發生之若干分層組態的材料演變圖。 FIG. 20B is a material evolution diagram depicting several layered configurations that occur when carbon is added to bulk aluminum according to one or more of the disclosed embodiments.

圖21A描繪了根據一個實施方式的用於將材料之熔融混合物噴塗至基板中之設備。 FIG. 21A depicts an apparatus for spraying a molten mixture of materials into a substrate according to one embodiment.

圖21B描繪了根據所揭示之實施方式中之一或多個實施方式的用於將材料(例如,covetic材料)噴塗至基板中之方法。 FIG. 21B depicts a method for spraying a material (e.g., a covetic material) into a substrate according to one or more of the disclosed embodiments.

圖21C為根據所揭示之實施方式中之一或多個實施方式的描繪了用於噴塗膜之電漿噴塗製程的示意圖。 FIG. 21C is a schematic diagram illustrating a plasma spraying process for spraying a film according to one or more of the disclosed embodiments.

圖22A描繪了根據所揭示之實施方式中之一或多個實施方式的用於用熔融材料(例如,金屬)包裹碳顆粒之設備。 FIG. 22A depicts an apparatus for encapsulating carbon particles with a molten material (e.g., metal) according to one or more of the disclosed embodiments.

圖22B描繪了根據所揭示之實施方式中之一或多個實施方式的用於用熔融材料(例如,金屬)包裹碳顆粒之方法。 FIG. 22B depicts a method for encapsulating carbon particles with a molten material (e.g., metal) according to one or more of the disclosed embodiments.

圖23A、圖23B、圖23C及圖23D描繪了根據所揭示之實施方式中之一或多個實施方式的例示性沉積技術。 Figures 23A, 23B, 23C, and 23D depict exemplary deposition techniques according to one or more of the disclosed embodiments.

圖24A及圖24B描繪了根據所揭示之實施方式中之一或多個實施方式的材料之簡化示意圖,該等材料係經由用於將該等材料放置至基板上之習知沉積技術形成該等。 FIGS. 24A and 24B depict simplified schematic diagrams of materials according to one or more of the disclosed embodiments, which are formed by known deposition techniques for placing the materials on a substrate.

圖25A及圖25B描繪了根據所揭示之實施方式中之一或多個實施方式的使用在 基板表面處產生非極性共價鍵合之創新沉積技術形成的材料之簡化示意圖。 Figures 25A and 25B depict simplified schematic diagrams of materials formed using innovative deposition techniques that produce non-polar covalent bonding at the surface of a substrate in accordance with one or more of the disclosed embodiments.

圖26A、圖26B、圖26C、圖26D及圖26E描繪了展示如何在鋁之面心立方(FCC)結構之正方形形狀中的位點與碳之某些晶體結構中出現之六邊形形狀中的位點之間形成非極性共價鍵的示意圖。 Figures 26A, 26B, 26C, 26D, and 26E depict schematic diagrams showing how nonpolar covalent bonds are formed between sites in the square shape of the face-centered cubic (FCC) structure of aluminum and sites in the hexagonal shape that occur in certain crystal structures of carbon.

圖27A描繪了根據所揭示之實施方式中之一或多個實施方式的用於產生呈粉末形式之材料(例如,covetic材料)的例示性設備。 FIG. 27A depicts an exemplary apparatus for producing a material in powder form (e.g., a covetic material) according to one or more of the disclosed embodiments.

圖27B1及圖27B2描繪了根據所揭示之實施方式中之一或多個實施方式的用於在流體中冷卻及處理粉末狀材料(例如,粉末狀covetic)的例示性流化床設備。 Figures 27B1 and 27B2 depict exemplary fluidized bed apparatus for cooling and processing powdered materials (e.g., powdered covetic) in a fluid according to one or more of the disclosed embodiments.

圖27C為根據所揭示之實施方式中之一或多個實施方式的描繪了用於產生粉末狀材料(例如,粉末狀covetic材料)之電漿噴塗製程的示意圖。 FIG. 27C is a schematic diagram illustrating a plasma spraying process for producing a powdered material (e.g., a powdered covetic material) according to one or more of the disclosed embodiments.

圖28描繪了根據一些實施方式的用於使用射出成型技術由粉末狀材料(例如,粉末狀covetic材料)製造組件之方法。 FIG. 28 depicts a method for manufacturing a component from a powdered material (e.g., a powdered covetic material) using injection molding techniques according to some embodiments.

圖29描繪了根據各種實施例的本文描述之材料(包括covetic材料)之各種性質。 FIG. 29 depicts various properties of materials described herein, including covetic materials, according to various embodiments.

圖30A1及圖30A2描繪了根據一些實施例的與熔化呈丸粒形式之相同或類似材料相比,與熔化粉末(例如,金屬裝飾碳)相關聯之問題及解決方案。 Figures 30A1 and 30A2 illustrate problems and solutions associated with melting a powder (e.g., metal-decorated carbon) compared to melting the same or similar material in pellet form, according to some embodiments.

圖31描繪了根據一些實施例的使用丸粒以在將丸粒引入VIM爐中期間將材料噴出減至最少或去除的方法。 FIG. 31 depicts a method for using pellets to minimize or eliminate material ejection during introduction of the pellets into a VIM furnace according to some embodiments.

圖32描繪了根據一些實施例的被放到模具中之熔體。 FIG. 32 depicts a melt placed into a mold according to some embodiments.

圖33描繪了根據一個態樣的球餅(puck)處理技術及設備之簡化示意圖。 FIG. 33 depicts a simplified schematic diagram of a puck processing technique and apparatus according to one embodiment.

圖34示出了根據一種方法的球餅分散測試過程之簡化示意圖。 FIG. 34 shows a simplified schematic diagram of a spherical cake dispersion test process according to one method.

相關申請案 Related applications

本專利申請案為主張以下各案之優先權的國際申請案:2022年9月30日申請的題為「USING PELLETIZED METAL-DECORATED MATERIALS IN AN INDUCTION MELTING FURNACE」之美國專利申請案No.17/957,937(隨後在2023年5月11日在相同標題下公佈為美國專利公开案No.2023-0145800);及2022年9月30日申請的題為「USING PELLETIZED METAL-DECORATED MATERIALS IN AN INDUCTION MELTING FURNACE」之美國專利申請案No.17/957,989(隨後在2023年2月9日在相同標題下公佈為美國專利公开案No.2023-0040722)。所有先前申請案之揭示內容均被視為本專利申請案之部分且以引用方式併入本專利申請案中。所有先前申請案之揭示內容被視為本專利申請案之部分且以引用方式併入本專利申請案中。 This patent application is an international application claiming priority to U.S. Patent Application No. 17/957,937, filed on September 30, 2022, entitled “USING PELLETIZED METAL-DECORATED MATERIALS IN AN INDUCTION MELTING FURNACE” (subsequently published as U.S. Patent Publication No. 2023-0145800 under the same title on May 11, 2023); and U.S. Patent Application No. 17/957,937, filed on September 30, 2022, entitled “USING PELLETIZED METAL-DECORATED MATERIALS IN AN INDUCTION MELTING FURNACE" (subsequently published as U.S. Patent Publication No. 2023-0040722 under the same title on February 9, 2023). The disclosures of all prior applications are deemed to be part of and incorporated by reference into this patent application. The disclosures of all prior applications are deemed to be part of and incorporated by reference into this patent application.

本揭示案之態樣係關於用於使用噴塗技術而非藉由將碳基材料混合至熔融金屬漿料本體中來產生covetic材料的方法。一些實施方式係關於用於將間隙碳結構之大小減小至奈米(nm)級之技術。本文中之附圖及討論呈現了用於產生「covetic」材料之例示性環境、例示性系統及例示性方法,covetic材料在本文中通常被理解及定義為暗示包含高濃度(>6% wt及直至90% wt)之碳,該碳以在熔化或磁控濺射期間碳不會分離出來之方式整合至其他材料(如本文所描述,根據各種實施例,諸如金屬、含金屬材料、塑膠、複合材料、陶瓷等)中。所得材料與產生其之基礎材料相比具有很多獨特且改良之性質。碳以有助於改良材料性質之若干方式分散於(例如,金屬)基體中。例如,碳非常牢固地鍵合於所得材料(例如,covetic材料)中,從而經常在偵測及表徵其形式時抵制很多標準方法。包含奈米級碳提高了所得材料之熔點及表面張力。根據本文描述之技術生產的材料具有更高之熱加工及冷加工強度。 Aspects of the present disclosure relate to methods for producing covetic materials using spraying techniques rather than by mixing carbon-based materials into a bulk molten metal slurry. Some embodiments relate to techniques for reducing the size of interstitial carbon structures to the nanometer (nm) scale. The figures and discussion herein present exemplary environments, exemplary systems, and exemplary methods for producing "covetic" materials, which are generally understood and defined herein as implying high concentrations (>6% wt and up to 90% wt) of carbon that are integrated into other materials (such as metals, metal-containing materials, plastics, composites, ceramics, etc., as described herein, according to various embodiments) in a manner that the carbon does not separate during melting or magnetron sputtering. The resulting material has many unique and improved properties compared to the base material from which it is produced. The carbon is dispersed in a (e.g., metal) matrix in several ways that help improve the material's properties. For example, the carbon is very strongly bonded to the resulting material (e.g., covetic material), often resisting many standard methods in detecting and characterizing its form. The inclusion of nanoscale carbon increases the melting point and surface tension of the resulting material. Materials produced according to the techniques described herein have increased hot and cold working strength.

問題與機會之鑒別及重要性Identification and importance of problems and opportunities

金屬基體複合材料可由(至少)金屬或金屬合金(指藉由將兩種或更多種金屬元素組合(特別係為了給出更高之強度或耐腐蝕性)而製成之金屬)基體與高強度模量陶瓷、碳基增強體或連續或不連續纖維、晶須或顆粒形式之微填料 相組合構成。增強體之大小很重要,因為微米大小之增強金屬可表現出比基礎合金更高之強度及剛度,高達可接受之水準。然而,由於在加工期間顆粒之間(例如,在晶界處)非所要、非均勻之碳設置,此類改良亦可能伴隨有非所要之較差延展性及非所要之低屈服強度、機械加工性及臨限值負載下之斷裂韌性。為了避免具有不相容之微米大小之增強體的金屬基體複合材料的過早開裂及其他缺點,將增強相之大小減小至奈米級係至關重要的。此外,需要多種方法,使得將增強相併入至(例如,金屬合金)基體中,且最佳地,使得將增強相均勻地併入至基體中。 Metal matrix composites may consist of (at least) a metal or metal alloy (meaning a metal made by combining two or more metallic elements, particularly to impart greater strength or corrosion resistance) matrix in combination with a high strength modulus ceramic, carbon-based reinforcements or microfillers in the form of continuous or discontinuous fibers, whiskers or particles. The size of the reinforcement is important, as micron-sized reinforcements may exhibit strength and stiffness higher than the base alloy to acceptable levels. However, such improvements may also be accompanied by undesirably poor ductility and undesirably low yield strength, machinability and fracture toughness under critical loads due to undesirable, non-uniform placement of carbon between grains (e.g., at grain boundaries) during processing. Reducing the size of the reinforcement phase to the nanoscale is critical to avoid premature cracking and other drawbacks of metal matrix composites with incompatible micron-sized reinforcements. Furthermore, methods are needed to allow the reinforcement phase to be incorporated into a matrix (e.g., a metal alloy) and, optimally, to be incorporated uniformly into the matrix.

與上述碳基增強體之添加相稱的係,已觀察到機械、熱學、電學及摩擦學(指相對運動中相互作用之表面的科學及工程)性質方面有顯著提高。值得注意的係,當增強體之大小自微米級(諸如1-1000μm)減小至奈米級(諸如<100nm)時,由於基體與顆粒之間的內聚力增加,此類性質可能改變及/或得到改良。性質之改良可歸因於形成了促進高效強化機制之強界面。據報道,奈米大小之顆粒(~20nm)與微米大小之顆粒(~3.5μm)相比,拉伸強度及屈服強度得到增強,儘管奈米大小之顆粒的體積負載與微米大小之顆粒相比減少了一個數量級。因此,如本領域已知之舊有技術,諸如感應熔化、電漿火花燒結等,通常無法提供奈米級之增強體。因此,目前需要將其中含有間隙空位之碳結構減小至奈米級。 Commensurate with the addition of the above-mentioned carbon-based reinforcements, significant improvements in mechanical, thermal, electrical, and tribological (the science and engineering of surfaces interacting in relative motion) properties have been observed. Notably, such properties may change and/or improve when the size of the reinforcement is reduced from the micron scale (e.g., 1-1000 μm) to the nanoscale (e.g., <100 nm) due to increased cohesion between the matrix and the particles. The improvement in properties can be attributed to the formation of strong interfaces that promote efficient reinforcement mechanisms. It has been reported that tensile strength and yield strength are enhanced for nanosized particles (~20 nm) compared to micron-sized particles (~3.5 μm), although the volume loading of the nanosized particles is reduced by an order of magnitude compared to the micron-sized particles. Therefore, prior art techniques known in the art, such as induction melting, plasma spark sintering, etc., are generally unable to provide nanoscale reinforcements. Therefore, there is a need to reduce carbon structures containing interstitial vacancies therein to the nanoscale.

微波(MW)電漿炬反應器Microwave (MW) Plasma Torch Reactor

使用微波(MW)電漿炬反應器,原始3D少層石墨烯(FLG)顆粒可連續成核,諸如在諸如甲烷氣體等含碳物質之大氣壓力蒸汽流中的飛行中,其中此類成核發生在最初合成之碳基或含碳「種子」顆粒中。由多層FLG(諸如5-15層)構成的凸蝕狀高度結構化且可調諧之3D介孔碳基顆粒自含碳物質中生長,同時伴隨著金屬元素或金屬基合金之併入,以形成至少部分共價鍵合(以及至少 部分金屬鍵合或離子鍵合)之碳-金屬複合(在本文亦稱為「covetic」)顆粒結構。在一些實施方式中,在所描述之MW炬反應器中提供或產生之「原始」石墨烯(指無缺陷或缺陷很少之石墨烯)未被氧化或者含有極低(諸如<1%)之氧含量。在一些實施方式中,(所得covetic材料中之)金屬本身藉由金屬鍵合而保持在一起,且(石墨烯或諸如基體或晶格等一些其他有組織之碳基2D或3D結構中普遍存在的)碳本身(主要)藉由非極性共價鍵而保持在一起。複合碳-金屬結構可包括在金屬-碳界面處出現的碳原子與金屬原子之間的非極性共價鍵。在較佳實施方式中,物質組合物中存在的碳原子之間及/或碳原子與金屬原子之間的共價鍵基本上由或完全由非極性共價鍵組成。 Using a microwave (MW) plasma torch reactor, pristine 3D few-layer graphene (FLG) particles can be continuously nucleated, such as in flight in an atmospheric pressure vapor stream of a carbonaceous material such as methane gas, wherein such nucleation occurs in initially synthesized carbon-based or carbon-containing "seed" particles. Evident highly structured and tunable 3D mesoporous carbon-based particles composed of multiple layers of FLG (e.g., 5-15 layers) grow from the carbonaceous material, accompanied by the incorporation of metal elements or metal-based alloys to form at least partially covalently bonded (and at least partially metallically or ionically bonded) carbon-metal composite (also referred to herein as "covetic") particle structures. In some embodiments, the "pristine" graphene (referring to graphene with no defects or few defects) provided or produced in the described MW torch reactor is not oxidized or contains an extremely low (e.g., <1%) oxygen content. In some embodiments, the metal (in the resulting covetic material) itself is held together by metallic bonding, and the carbon (as commonly found in graphene or some other organized carbon-based 2D or 3D structure such as a matrix or lattice) itself is held together (primarily) by non-polar covalent bonds. The composite carbon-metal structure may include non-polar covalent bonds between carbon atoms and metal atoms occurring at the metal-carbon interface. In a preferred embodiment, the covalent bonds between carbon atoms and/or between carbon atoms and metal atoms present in the composition of matter consist essentially of or entirely of non-polar covalent bonds.

此外,碳可以使用習知技術無法達成之量存在,例如,根據各種實施例,所得材料可包含大於約6wt%碳、大於約15wt%碳、大於約40wt%碳、大於約60wt%碳或直至約90wt%碳。在各種實施例中,碳可以前述量包含在金屬晶格中,使得所有或實質上所有的碳併入至金屬(或其他材料)晶格中,且晶界/晶格表面實質上或完全沒有碳聚集體及/或團聚物。此外,碳較佳地位於晶格之間隙位點處。 In addition, carbon can be present in amounts that cannot be achieved using conventional techniques, for example, according to various embodiments, the resulting material can contain greater than about 6wt% carbon, greater than about 15wt% carbon, greater than about 40wt% carbon, greater than about 60wt% carbon, or up to about 90wt% carbon. In various embodiments, carbon can be included in the metal lattice in the aforementioned amounts such that all or substantially all of the carbon is incorporated into the metal (or other material) lattice and the grain boundaries/lattice surfaces are substantially or completely free of carbon aggregates and/or agglomerates. In addition, the carbon is preferably located at interstitial sites of the lattice.

在特別較佳之實施例中,材料可提供為粉末之形式,該粉末具有如本文描述之「covetic」材料之物理特性。該粉末可包含複數個顆粒,例如,直徑約20nm至約3.5μm之顆粒,其中每一顆粒包括具有如本文所描述設置於金屬晶格中之碳的金屬裝飾碳(呈金屬上碳或碳上金屬之形式)。最佳地,顆粒各自獨立地包含金屬晶格,該金屬間隔具有設置於該金屬晶格中的一或多個(例如,一個、兩個、五個、十個或直至十五個)相干的平面石墨烯層。圖21C及圖27C示出了根據目前描述之發明構思之一個態樣的沿著鋁基體之基面設置的此類相干的平面石墨烯層之例示性橫截面結構。熟習此項技術者將瞭解到,目前描述之粉末的各種實施方式可包括表現出此類橫截面結構之顆粒。實際上,由於碳併 入至晶格中,因此碳有利地滲入至基面表面而非沉澱於晶界(或其他晶格表面)處。此過程之所以可能發生係因為奈米級石墨烯之可濕性質,且在使用習知技術生產碳植入材料時不會觀察到該過程。 In particularly preferred embodiments, the material may be provided in the form of a powder having the physical properties of a "covetic" material as described herein. The powder may comprise a plurality of particles, e.g., particles having a diameter of about 20 nm to about 3.5 μm, wherein each particle comprises metal-decorated carbon (in the form of carbon on metal or metal on carbon) having carbon disposed in a metal lattice as described herein. Optimally, the particles each independently comprise a metal lattice having one or more (e.g., one, two, five, ten, or up to fifteen) coherent planar graphene layers disposed in the metal lattice. FIG. 21C and FIG. 27C illustrate exemplary cross-sectional structures of such coherent planar graphene layers disposed along a basal plane of an aluminum substrate according to one aspect of the presently described inventive concepts. Those skilled in the art will appreciate that various embodiments of the presently described powders may include particles exhibiting such cross-sectional structures. In fact, as the carbon is incorporated into the crystal lattice, the carbon advantageously penetrates into the basal plane surfaces rather than being deposited at grain boundaries (or other lattice surfaces). This process is possible due to the wettable nature of nanoscale graphene and is not observed when producing carbon implanted materials using known techniques.

在各個態樣中,一或多個相干的平面石墨烯層之至少一些碳原子設置於金屬晶格內之間隙位點中,且較佳地,一或多個相干的平面石墨烯層平行於金屬晶格之基面而並置。在一些實施例中,一或多個相干的平面石墨烯層有間隙地並置於金屬晶格之基面之間。在一些實施例中,一或多個相干的平面石墨烯層有間隙地交錯於金屬晶格之基面之間。熟習此項技術者在閱讀了本揭示案後將瞭解到,碳在間隙位點處之該獨特分散及相對於晶格之基面的設置之所以發生係因為本文描述之創新處理,該創新處理利用了奈米級石墨烯(特別係原始石墨烯)之高「可濕性」,且如本文所描述,實現了高碳載量、實質上均勻之碳分散及實質上缺少碳聚集體及/或團聚物,以上各者均為使用習知技術不可達成的。參見例如圖1A-1B,以獲得習知上生產之「covetic材料」與使用本文描述之創新技術生產之材料相比的圖形比較,以及下文之對應描述。 In various aspects, at least some of the carbon atoms of the one or more coherent planar graphene layers are disposed in interstitial sites within the metal lattice, and preferably, the one or more coherent planar graphene layers are juxtaposed parallel to the basal planes of the metal lattice. In some embodiments, the one or more coherent planar graphene layers are interstitially juxtaposed between the basal planes of the metal lattice. In some embodiments, the one or more coherent planar graphene layers are interstitially staggered between the basal planes of the metal lattice. Those skilled in the art will appreciate after reading this disclosure that this unique dispersion of carbon at interstitial sites and arrangement relative to the basal planes of the crystal lattice occurs because of the innovative processing described herein, which exploits the high "wettability" of nanoscale graphene (particularly pristine graphene) and, as described herein, achieves high carbon loadings, substantially uniform dispersion of carbon, and a substantial lack of carbon aggregates and/or agglomerates, all of which are not achievable using conventional techniques. See, e.g., FIGS. 1A-1B for a graphical comparison of conventionally produced "covetic materials" compared to materials produced using the innovative techniques described herein, and the corresponding description below.

繼續參考根據本揭示案之粉末狀材料,碳原子中之至少一些可共價鍵合至金屬晶格之金屬原子,同時亦允許碳原子之間的非極性共價鍵合及/或材料之金屬原子之間的金屬鍵合。更具體而言,碳原子之間及/或碳原子與金屬原子之間的非極性共價鍵合之特徵在於在所鍵合原子之間均等共用電子,此不同於極性共價鍵合(其中電子在所鍵合原子之間共用)或離子鍵合(其中所鍵合原子由於在電子自一個原子轉移至另一個原子之後電荷差異而保持在一起)。在一些態樣中,粉末狀材料之顆粒可實質上或完全不包括極性共價鍵及/或離子鍵。在本上下文中,「實質上」不包括極性共價鍵及/或離子鍵係指其性質(例如,晶體結構、機械強度、導熱性/導電性、反射率等,如下文所描述,尤其,參看圖29)並非由於極性共價鍵及/或離子鍵之存在而導致的組合物。實質上不包括極性共 價鍵及/或離子鍵之組合物可被視為基本上或完全由非極性共價鍵組成,至少就在結構內鍵合在一起之碳原子及金屬原子而言。 With continued reference to the powdered material according to the present disclosure, at least some of the carbon atoms may be covalently bonded to metal atoms of the metal lattice while also allowing for non-polar covalent bonding between carbon atoms and/or metallic bonding between metal atoms of the material. More specifically, non-polar covalent bonding between carbon atoms and/or between carbon atoms and metal atoms is characterized by equal sharing of electrons between the bonded atoms, as opposed to polar covalent bonding (where electrons are shared between bonded atoms) or ionic bonding (where bonded atoms are held together by charge differences following the transfer of electrons from one atom to another). In some aspects, particles of the powdered material may include substantially or entirely no polar covalent and/or ionic bonds. In this context, "substantially" free of polar covalent and/or ionic bonds refers to a composition whose properties (e.g., crystal structure, mechanical strength, thermal/electrical conductivity, reflectivity, etc., as described below, and in particular, see FIG. 29 ) are not due to the presence of polar covalent and/or ionic bonds. A composition that is substantially free of polar covalent and/or ionic bonds can be considered to consist essentially or entirely of non-polar covalent bonds, at least with respect to the carbon atoms and metal atoms bonded together within the structure.

此外,石墨烯較佳為「原始的」,因為2D或3D結構實質上沒有缺陷,諸如空位、夾雜物、污染物等,如一般熟習此項技術者在閱讀了本揭示案之後將理解的。 Furthermore, graphene is preferably "pristine" in that the 2D or 3D structure is substantially free of defects, such as vacancies, inclusions, contaminants, etc., as will be understood by one of ordinary skill in the art after reading this disclosure.

金屬晶格可包括一或多種金屬,諸如鋁、銅、鐵、鎳、鈦、鉭、鎢、鉻、鉬、鈷、錳、鈮及其組合。在包括組合之情況下,金屬較佳地呈合金形式,諸如英高鎳合金,較佳地由鎳、鉻、鋁、銅、鐵、鈦、鉭、鉬、鈷、錳及/或鈮形成之英高鎳,且最佳地,英高鎳超合金為Inconel 600、Inconel 617、Inconel 625、Inconel 690、Inconel 718、Inconel X-750或其組合。在一些情況下,組合包括錫及/或鎢,及/或銀,及/或銻,單獨地或成組合。在一些實施例中,前述金屬中之一種或多種可單獨地或按組合用作表面活性劑以改良金屬-碳組合之可濕性。 The metal lattice may include one or more metals, such as aluminum, copper, iron, nickel, titanium, tantalum, tungsten, chromium, molybdenum, cobalt, manganese, niobium, and combinations thereof. Where a combination is included, the metal is preferably in the form of an alloy, such as an Inconel nickel alloy, preferably Inconel nickel formed of nickel, chromium, aluminum, copper, iron, titanium, tantalum, molybdenum, cobalt, manganese and/or niobium, and most preferably, the Inconel nickel superalloy is Inconel 600, Inconel 617, Inconel 625, Inconel 690, Inconel 718, Inconel X-750, or combinations thereof. In some cases, the combination includes tin and/or tungsten, and/or silver, and/or antimony, either alone or in combination. In some embodiments, one or more of the foregoing metals may be used alone or in combination as a surfactant to improve the wettability of the metal-carbon combination.

如本文描述之粉末狀材料較佳地使用非平衡電漿形成,諸如可使用如本文描述之微波電漿基反應器來產生。目前揭示之微波電漿基反應器製程提供了反應及加工環境,其中氣-固反應可在非平衡條件下控制(指不處於熱力學平衡狀態但可用變量來描述之物理系統,該等變量表示用於指定處於熱力學平衡狀態下之系統之變量的外推;非平衡熱力學涉及傳輸過程及化學反應速率,以及可獨立地由電離勢及動量以及熱能控制之金屬粉末之初始熔融)。 The powdered material as described herein is preferably formed using a non-equilibrium plasma, such as may be produced using a microwave plasma-based reactor as described herein. The microwave plasma-based reactor process disclosed herein provides a reaction and processing environment in which gas-solid reactions can be controlled under non-equilibrium conditions (referring to a physical system that is not in thermodynamic equilibrium but can be described by variables that represent extrapolations of variables used to specify a system in thermodynamic equilibrium; non-equilibrium thermodynamics involves transport processes and chemical reaction rates, and the initial melting of metal powders that can be independently controlled by ionization potential and momentum and thermal energy).

在原位(係指在反應器或反應室內就地)成核後,自電漿炬中離開之固體、基本固體或半固體之碳基顆粒可以增材、之逐層方式沉積到溫度受控之基板(諸如滾筒)上。離開之顆粒可被噴塗至特定基板上且鍵合至特定基板上或其中。在一些情況中,不使用基板,而是,成組離開之半固體顆粒形成一或多個定向組織的、獨立的、自支撐的結構。與操作流量、功率及組態受到限制之標準電漿炬不同,目前揭示之微波電漿炬包括控制機制(諸如流量控制、功率控制、 溫度控制等),以獨立地控制一或多個組成材料溫度及氣-固反應化學,以便產生獨特、凸蝕狀、高度組織、共價鍵合之碳-金屬結構,該等碳-金屬結構具有令人驚喜的及極高程度的均質性。 After in situ nucleation (meaning in situ in a reactor or reaction chamber), the solid, substantially solid or semi-solid carbon-based particles exiting the plasma torch can be deposited in an additive, layer-by-layer manner onto a temperature-controlled substrate (such as a drum). The exiting particles can be sprayed onto a particular substrate and bonded to or into the particular substrate. In some cases, a substrate is not used, but rather, the exiting semi-solid particles are grouped to form one or more directional organized, free-standing, self-supporting structures. Unlike standard plasma torches that are limited in operating flow, power, and configuration, the presently disclosed microwave plasma torches include control mechanisms (e.g., flow control, power control, temperature control, etc.) to independently control one or more constituent material temperatures and gas-solid reaction chemistry to produce unique, embossed, highly organized, covalently bonded carbon-metal structures with surprising and extremely high levels of homogeneity.

为了進行闡釋,根據各種實施方式,均勻分散之金屬-碳組合的最大可辨別特徵大小(例如,由沿著所述「特徵」之縱軸測得的長度定義)係在約0.01奈米(nm)至1微米(μm)之範圍內,較佳地在約0.01nm至約1μm之範圍內,更佳地在約0.01nm至約750nm之範圍內,更佳地在約0.01nm至約500nm之範圍內,更佳地在約0.01nm至約100nm之範圍內,在某一範圍內,更佳地在約0.01nm至約50nm之範圍內,且最佳地在約0.01nm至約10nm特徵大小之範圍內。此與非均勻分散相反,非均勻分散之特徵在於約幾(例如,3-5)微米或更大的相對較大之特徵大小。 For illustration, according to various embodiments, the maximum discernible feature size of the uniformly dispersed metal-carbon combination (e.g., defined by the length measured along the longitudinal axis of the "feature") is in the range of about 0.01 nanometers (nm) to 1 micrometer (μm), preferably in the range of about 0.01 nm to about 1 μm, more preferably in the range of about 0.01 nm to about 750 nm, more preferably in the range of about 0.01 nm to about 500 nm, more preferably in the range of about 0.01 nm to about 100 nm, within a certain range, more preferably in the range of about 0.01 nm to about 50 nm, and most preferably in the range of about 0.01 nm to about 10 nm feature size. This is in contrast to non-uniform dispersion, which is characterized by relatively large feature sizes on the order of a few (e.g., 3-5) microns or larger.

該物質組合物亦可包括複數個「聚集體」及/或複數個「團聚物」,其中每一聚集體包括連接在一起之大量顆粒,且每一團聚物包括連接在一起之大量聚集體。在一些實施方式中,每一顆粒可具有20nm與150nm之間的主要尺寸。每一聚集體可具有40nm與10μm之間的主要尺寸。每一團聚物可具有0.1μm與1,000μm之間的主要尺寸。 The composition of matter may also include a plurality of "aggregates" and/or a plurality of "agglomerates", wherein each aggregate includes a plurality of particles connected together, and each agglomerate includes a plurality of aggregates connected together. In some embodiments, each particle may have a major dimension between 20nm and 150nm. Each aggregate may have a major dimension between 40nm and 10μm. Each agglomerate may have a major dimension between 0.1μm and 1,000μm.

由目前揭示之基於MW反應器之技術產生的covetic材料產生了原本在當前材料或產品中無法獲得之各種競爭性優點。一個此類優點涉及固有之可擴展性及多功能性,以調配獨特的、物理及化學穩定的、多功能金屬-碳複合材料,該等金屬-碳複合材料在各種組態及/或架構中表現出可預測之變形(指應力、應變、彈性、或某其他可確定之物理特性),該等各種組態及/或架構諸如(但不限於):(1)緻密薄膜植入;(2)塗層;(3)厚條帶及(4)可經受隨後之重熔及鑄造及/或用於形成經工程化之金屬合金組件的粉末狀顆粒。與現有之母體金屬合金調配物相比,任何前述緻密薄膜MW反應器產生之碳基金屬複合材料植入及/ 或塗層及/或條帶及/或粉末狀顆粒皆表現出增強之物理、化學及電學性質。 The covetic materials produced by the presently disclosed MW reactor-based technology yield a variety of competitive advantages not otherwise available in current materials or products. One such advantage relates to the inherent scalability and versatility to formulate unique, physically and chemically stable, multifunctional metal-carbon composites that exhibit predictable deformation (in terms of stress, strain, elasticity, or some other determinable physical property) in a variety of configurations and/or architectures such as, but not limited to: (1) dense thin film implants; (2) coatings; (3) thick ribbons; and (4) powdered particles that can undergo subsequent remelting and casting and/or be used to form engineered metal alloy components. The carbon-based metal composite implants and/or coatings and/or strips and/or powdered particles produced by any of the aforementioned dense thin film MW reactors exhibit enhanced physical, chemical and electrical properties compared to existing parent metal alloy formulations.

使用如上所述之粉末(及/或由此類粉末形成之丸粒)產生的材料享有粉末自身的相同的有利物理特性及性質中之許多性質,除了微米級材料可能不會表現出碳存在於沿著金屬晶格之基面設置的相干的平面層中之外。而是,微米級材料(例如,藉由微波電漿噴塗炬或本文描述之其他合適技術(及熟習此項技術者在閱讀了此類描述之後將瞭解的等效物)生產)之特徵在於迄今不能達成之碳載量(例如,1.5wt%至90wt%,及其間之任何量)、碳在金屬基體中之均一/均勻分散,及晶格表面(例如,晶界)處缺少碳聚集體及/或團聚物。除了該區別之外,使用粉末狀材料(較佳地粉末狀covetic材料)產生之最終產品可表現出粉末狀前體之任何一或多種物理特性及/或性質(按任何組合),而不會脫離目前描述之發明構思的範疇。 Materials produced using powders as described above (and/or pellets formed from such powders) enjoy many of the same advantageous physical characteristics and properties of the powders themselves, except that micron-sized materials may not exhibit carbon present in coherent planar layers disposed along the basal planes of the metal lattice. Rather, micron-sized materials (e.g., produced by microwave plasma torch spraying or other suitable techniques described herein (and equivalents as will become apparent to those skilled in the art upon reading such description)) are characterized by heretofore unachievable carbon loadings (e.g., 1.5 wt% to 90 wt%, and any amounts therebetween), uniform/homogeneous dispersion of carbon in the metal matrix, and a lack of carbon aggregates and/or agglomerates at lattice surfaces (e.g., grain boundaries). Aside from that distinction, the final product produced using the powdered material, preferably the powdered covetic material, may exhibit any one or more of the physical characteristics and/or properties (in any combination) of the powdered precursor without departing from the scope of the presently described inventive concepts.

一般實施例General Embodiment

根據一個一般態樣,一種物質組合物包含一或多個顆粒,其中每一顆粒獨立地包含一金屬晶格,該金屬晶格具有設置於該金屬晶格中的一或多個相干的平面石墨烯層。 According to one general aspect, a composition of matter comprises one or more particles, wherein each particle independently comprises a metal lattice having one or more coherent planar graphene layers disposed in the metal lattice.

根據另一個一般態樣,一種物質組合物包含一英高鎳合金,該英高鎳合金具有設置於該英高鎳合金之晶格中的碳。 According to another general aspect, a composition of matter includes an inconel nickel alloy having carbon disposed in a crystal lattice of the inconel nickel alloy.

根據又一個一般態樣,一種物質組合物包含一金屬晶格,該金屬晶格具有設置於該金屬晶格中之至少約15wt%碳。 According to another general aspect, a composition of matter includes a metal lattice having at least about 15 wt % carbon disposed in the metal lattice.

此外,在各種實施方式中,前述態樣可包括以下物理及/或結構特性及相關聯性質中之任一者。此外,根據不同實施例,此等特性及/或性質可按不同組合或排列來包括,但不作限制。 Furthermore, in various embodiments, the aforementioned aspects may include any of the following physical and/or structural characteristics and associated properties. Furthermore, according to different embodiments, these characteristics and/or properties may be included in different combinations or arrangements, but are not limited thereto.

在一個態樣中,一種物質組合物包含一或多個顆粒,且每一顆粒獨立地包含一金屬晶格,該金屬晶格具有設置於其中的一或多個相干的平面石墨 烯層。較佳地,該一或多個相干的平面石墨烯層之至少一些碳原子設置於該金屬晶格內之間隙位點中。更佳地,該一或多個相干的平面石墨烯層有間隙地交錯於該金屬晶格之基面之間。石墨烯可作為單層(例如,「單層石墨烯」或「SLG」)或多個層(例如,兩個層、三個層、五個層、十個層或任何數目個層直至十五個,本文亦稱為「少層石墨烯」或「FLG」)存在。該一或多個石墨烯層之至少一些碳原子共價鍵合至金屬晶格之金屬原子,且碳原子與金屬原子之間的共價鍵為非極性共價鍵或包括非極性共價鍵。在一些實施例中,該等共價鍵可基本上由或完全由非極性共價鍵組成。類似地,該一或多個石墨烯層之碳原子可共價鍵合至該一或多個石墨烯層之其他碳原子,且根據不同實施方式,此等共價鍵可包括非極性共價鍵、基本上由非極性共價鍵組成或完全由非極性共價鍵組成。因此,該一或多個顆粒可實質上或完全不包括極性共價鍵。同樣地,每一顆粒之金屬晶格可實質上或完全不包括離子鍵。該一或多個石墨烯層各自較佳地實質上沒有缺陷,使得石墨烯係「原始的」。較佳地,每一顆粒之特徵亦在於在晶界處及/或在金屬晶格之表面處實質上缺少或更佳地完全缺少碳聚集體及/或團聚物。由於本文描述之創新處理技術,顆粒之總碳載量可在約15wt%至約90wt%之範圍內,亦展示了各種中間載量(例如,在各種實施方式中,約20wt%、約25wt%、約33wt%、約40wt%、約50wt%、約60wt%、約75wt%或直至90wt%)。此外,該等顆粒之特徵可在於在約20nm至約3.5μm之範圍內的直徑,及/或具有在約0.1nm至約1μm之範圍內的最大可辨別特徵大小。在一些實施方式中,該等顆粒可被壓制成丸粒。 In one aspect, a composition of matter comprises one or more particles, and each particle independently comprises a metal lattice having one or more coherent planar graphene layers disposed therein. Preferably, at least some of the carbon atoms of the one or more coherent planar graphene layers are disposed in interstitial sites within the metal lattice. More preferably, the one or more coherent planar graphene layers are interstitially interlaced between basal planes of the metal lattice. Graphene can exist as a single layer (e.g., "single-layer graphene" or "SLG") or multiple layers (e.g., two layers, three layers, five layers, ten layers, or any number of layers up to fifteen, also referred to herein as "few-layer graphene" or "FLG"). At least some of the carbon atoms of the one or more graphene layers are covalently bonded to metal atoms of the metal lattice, and the covalent bonds between the carbon atoms and the metal atoms are non-polar covalent bonds or include non-polar covalent bonds. In some embodiments, the covalent bonds may consist essentially of or entirely of non-polar covalent bonds. Similarly, the carbon atoms of the one or more graphene layers may be covalently bonded to other carbon atoms of the one or more graphene layers, and according to different embodiments, these covalent bonds may include non-polar covalent bonds, consist essentially of non-polar covalent bonds, or consist entirely of non-polar covalent bonds. Therefore, the one or more particles may include substantially or entirely no polar covalent bonds. Likewise, the metal lattice of each particle may include substantially or completely no ionic bonds. The one or more graphene layers are each preferably substantially free of defects, such that the graphene is "pristine". Preferably, each particle is also characterized by a substantial lack or more preferably a complete lack of carbon aggregates and/or agglomerates at the grain boundaries and/or at the surface of the metal lattice. Due to the innovative processing techniques described herein, the total carbon loading of the particles can range from about 15 wt % to about 90 wt %, with various intermediate loadings also being shown (e.g., in various embodiments, about 20 wt %, about 25 wt %, about 33 wt %, about 40 wt %, about 50 wt %, about 60 wt %, about 75 wt % or up to 90 wt %). Additionally, the particles may be characterized by a diameter in the range of about 20 nm to about 3.5 μm, and/or have a maximum discernible feature size in the range of about 0.1 nm to about 1 μm. In some embodiments, the particles may be pressed into pellets.

根據另一個態樣,一種物質組合物包含英高鎳合金,該英高鎳合金具有設置於其金屬晶格中之碳。較佳地,該碳中之至少一些設置於該金屬晶格之間隙位點處,且更佳地,碳實質上均勻地分散於該金屬晶格中。此外,在一些實施方式中,該物質組合物之晶界及/或金屬晶格之表面實質上沒有碳聚集體 及/或團聚物。因此,該物質組合物之最大可辨別特徵大小可在約0.1nm至約1μm之範圍內。至少一些碳原子共價鍵合至該金屬晶格之金屬原子,且碳原子與金屬原子之間的共價鍵為非極性共價鍵或包括非極性共價鍵。在一些實施例中,該等共價鍵可基本上由或完全由非極性共價鍵組成。類似地,碳原子可共價鍵合至其他碳原子,且根據不同實施方式,此等共價鍵可包括非極性共價鍵、基本上由非極性共價鍵組成或完全由非極性共價鍵組成。因此,該一或多種物質組合物可實質上或完全不包括極性共價鍵。同樣地,金屬晶格可實質上或完全不包括離子鍵。 According to another aspect, a composition of matter comprises an inconel nickel alloy having carbon disposed in a metal lattice thereof. Preferably, at least some of the carbon is disposed at interstitial sites of the metal lattice, and more preferably, the carbon is substantially uniformly dispersed in the metal lattice. Furthermore, in some embodiments, the grain boundaries of the composition of matter and/or the surfaces of the metal lattice are substantially free of carbon aggregates and/or agglomerates. Thus, the maximum discernible feature size of the composition of matter may be in the range of about 0.1 nm to about 1 μm. At least some of the carbon atoms are covalently bonded to metal atoms of the metal lattice, and the covalent bonds between the carbon atoms and the metal atoms are or include non-polar covalent bonds. In some embodiments, the covalent bonds may consist essentially of or consist entirely of non-polar covalent bonds. Similarly, carbon atoms may covalently bond to other carbon atoms, and depending on the embodiment, such covalent bonds may include, consist essentially of, or consist entirely of non-polar covalent bonds. Thus, the one or more compositions of matter may include essentially or entirely no polar covalent bonds. Similarly, a metal lattice may include essentially or entirely no ionic bonds.

根據又一個態樣,一種物質組合物包含一金屬晶格,該金屬晶格具有設置於其中的至少約15wt%碳。較佳地,該碳中之至少一些設置於該金屬晶格之間隙位點處,且更佳地,碳實質上均勻地分散於該金屬晶格中。此外,在一些實施方式中,該物質組合物之晶界及/或金屬晶格之表面實質上沒有碳聚集體及/或團聚物。因此,該物質組合物之最大可辨別特徵大小可在約0.1nm至約1μm之範圍內。至少一些碳原子共價鍵合至該金屬晶格之金屬原子,且碳原子與金屬原子之間的共價鍵為非極性共價鍵或包括非極性共價鍵。在一些實施例中,該等共價鍵可基本上由或完全由非極性共價鍵組成。類似地,碳原子可共價鍵合至其他碳原子,且根據不同實施方式,此等共價鍵可包括非極性共價鍵、基本上由非極性共價鍵組成或完全由非極性共價鍵組成。因此,該一或多種物質組合物可實質上或完全不包括極性共價鍵。同樣地,金屬晶格可實質上或完全不包括離子鍵。 According to yet another aspect, a composition of matter comprises a metal lattice having at least about 15 wt % carbon disposed therein. Preferably, at least some of the carbon is disposed at interstitial sites of the metal lattice, and more preferably, the carbon is substantially uniformly dispersed in the metal lattice. Furthermore, in some embodiments, the grain boundaries of the composition of matter and/or the surfaces of the metal lattice are substantially free of carbon aggregates and/or agglomerates. Thus, the maximum discernible feature size of the composition of matter may be in the range of about 0.1 nm to about 1 μm. At least some of the carbon atoms are covalently bonded to metal atoms of the metal lattice, and the covalent bonds between the carbon atoms and the metal atoms are or include non-polar covalent bonds. In some embodiments, the covalent bonds may consist essentially of or consist entirely of non-polar covalent bonds. Similarly, carbon atoms may covalently bond to other carbon atoms, and depending on the embodiment, such covalent bonds may include, consist essentially of, or consist entirely of non-polar covalent bonds. Thus, the one or more compositions of matter may include essentially or entirely no polar covalent bonds. Similarly, a metal lattice may include essentially or entirely no ionic bonds.

在前述態樣之各種實施方式中,該金屬晶格可包含選自由以下各者組成之群中的一或多種金屬:鋁、銅、鐵、鎳、鈦、鉭、鎢、鉻、鉬、鈷、錳、鈮及其組合。因此,金屬晶格之特徵可在於晶體結構,諸如面心立方(FCC)、體心立方(BCC)或六方密積(HCC)。此外,金屬晶格可包含約15wt%至約90wt% 之碳(例如,在各種實施方式中,約20wt%、約25wt%、約33wt%、約40wt%、約50wt%、約60wt%、約75wt%或直至90wt%)。碳較佳地存在於金屬晶格之間隙位點處。在一些方法中,金屬可以合金形式存在。例如,在特別較佳之方法中,金屬以一或多種英高鎳合金之形式存在,諸如Inconel 600、Inconel 617、Inconel 625、Inconel 690、Inconel 718及/或Inconel X-750。更佳地,英高鎳合金為超合金。 In various embodiments of the foregoing aspects, the metal lattice may include one or more metals selected from the group consisting of aluminum, copper, iron, nickel, titanium, tungsten, chromium, molybdenum, cobalt, manganese, niobium, and combinations thereof. Thus, the metal lattice may be characterized by a crystal structure such as face-centered cubic (FCC), body-centered cubic (BCC), or hexagonal close-packed (HCC). In addition, the metal lattice may include about 15 wt % to about 90 wt % carbon (e.g., about 20 wt %, about 25 wt %, about 33 wt %, about 40 wt %, about 50 wt %, about 60 wt %, about 75 wt %, or up to 90 wt %) in various embodiments. The carbon is preferably present at interstitial sites of the metal lattice. In some methods, the metal may be present in alloy form. For example, in particularly preferred methods, the metal is in the form of one or more Inconel nickel alloys, such as Inconel 600, Inconel 617, Inconel 625, Inconel 690, Inconel 718 and/or Inconel X-750. More preferably, the Inconel nickel alloy is a superalloy.

概述Overview

本文之揭示內容描述了低劑量之奈米填料碳基材料(諸如石墨烯等)與金屬之整合,該石墨烯因其固有之結構特性如高縱橫比及「2D」平面幾何形狀而聞名。石墨烯由於其面內sp2 C=C鍵合(產生2D平面幾何形狀)而擁有驚人之良好機械、物理、熱學及電學性質。因此,與替代物(諸如微填料聚丙烯腈(PAN)基碳纖維)比較,石墨烯將用作金屬基體複合材料之理想增強體。應注意,即便在低石墨烯奈米薄片含量(載量)下,3D網路亦被形成為具有各向異性(指當在不同方向上量測時物理性質之值不同的物件或物質),此使得導熱性及導電性以及機械特徵顯著改良。 The disclosure herein describes the integration of low dosage nanofiller carbon-based materials such as graphene, which is known for its intrinsic structural properties such as high aspect ratio and "2D" planar geometry, with metals. Graphene possesses amazingly good mechanical, physical, thermal and electrical properties due to its in-plane sp2C =C bonding (resulting in 2D planar geometry). Therefore, graphene would be an ideal reinforcement for metal matrix composites compared to alternatives such as microfiller polyacrylonitrile (PAN)-based carbon fibers. It is noted that even at low graphene nanoflake content (loading), the 3D network was formed to have anisotropy (referring to an object or substance with different values of physical properties when measured in different directions), which resulted in significantly improved thermal and electrical conductivity as well as mechanical characteristics.

在金屬基體複合材料中使用碳奈米填料遇到之挑戰包括由於潤濕性(指液體與固體表面保持接觸之能力,該接觸係由於當將兩者帶到一起時分子間之相互作用引起的;潤濕程度(稱為可濕性)由粘合力與內聚力之間的力平衡決定)差而難以分散。由於碳原子之間的凡得瓦力,由奈米填料呈現之增加之表面積使顆粒形成團簇並纏繞。奈米填料在金屬基體複合材料中之聚集可能會導致非所要之裂紋及孔隙之形成,最終可能會損害所得材料之結構完整性,從而使得在高負載或效能條件下過早失效。 Challenges encountered in using carbon nanofillers in metal matrix composites include difficulty in dispersion due to poor wettability (the ability of a liquid to maintain contact with a solid surface due to the interaction between molecules when the two are brought together; the degree of wetting (called wettability) is determined by the balance of forces between adhesion and cohesion). The increased surface area presented by the nanofillers causes the particles to cluster and entangle due to van der Waals forces between carbon atoms. Aggregation of nanofillers in metal matrix composites can lead to the formation of undesirable cracks and pores, which can ultimately compromise the structural integrity of the resulting material, leading to premature failure under high load or performance conditions.

儘管許多加工方法,諸如習知之粉末冶金、熱軋、鑄造及增材製造等,已經(且目前亦可能)用於產生金屬基體複合材料,但對於均勻分散奈米填料 仍然存在挑戰。由在固結期間施加之應力對奈米填料造成之損害及在燒結及鑄造期間在高溫下與基體發生非所要或不可控制之化學反應為在試圖實現奈米填料分散期間所面臨之挑戰的一些實例。 Although many processing methods, such as those known as powder metallurgy, hot rolling, casting, and additive manufacturing, have been (and are currently possible) used to produce metal matrix composites, challenges remain for uniformly dispersing nanofillers. Damage to the nanofillers caused by stresses applied during consolidation and undesirable or uncontrollable chemical reactions with the matrix at high temperatures during sintering and casting are some examples of challenges faced when trying to achieve nanofiller dispersions.

與可能更易於與金屬相互作用以形成碳化物(根據吉布斯自由能在熱力學上有利)之石墨烯片材之側面及末端相比,石墨烯之無缺陷基面表現出異常有利之化學穩定性。然而,在加工期間,可能很容易在基面中形成缺陷,從而導致碳化物形成並對複合材料性質產生不利影響。因此,諸如高溫及高壓等相對苛刻之加工條件可能對碳奈米填料與其周圍金屬基基體之間的界面質量產生不利影響。具體地,高溫及高壓可能不利地影響濕潤能力、結構完整性,可能有害地影響碳化物形成,且亦可能引起其他有害之界面反應。 The defect-free basal plane of graphene exhibits exceptionally favorable chemical stability compared to the sides and ends of graphene sheets, which may more readily interact with metals to form carbides (thermodynamically favorable based on Gibbs free energy). However, during processing, defects may be easily formed in the basal plane, leading to carbide formation and adversely affecting composite properties. Therefore, relatively harsh processing conditions such as high temperature and high pressure may adversely affect the quality of the interface between the carbon nanofiller and its surrounding metal-based matrix. Specifically, high temperature and high pressure may adversely affect wettability, structural integrity, may deleteriously affect carbide formation, and may also induce other detrimental interfacial reactions.

被稱為covetic(如前面介紹的)之替代製程已成功地用於將碳奈米填料併入至金屬基體中。在covetic相關製程中,已表明,石墨烯「帶」及奈米顆粒之網路係藉由使用外加電場在液態金屬內形成,該網路在金屬基體內表現出非凡之穩定性,即使在重熔後亦如此。對應地,該複合結構比母體金屬更高效地導熱及導電。 An alternative process called covetic (described earlier) has been successfully used to incorporate carbon nanofillers into metal matrices. In covetic-related processes, it has been shown that networks of graphene "ribbons" and nanoparticles are formed within liquid metals using an applied electric field, and that the networks exhibit remarkable stability within the metal matrix, even after remelting. Accordingly, the composite structures conduct heat and electricity more efficiently than the parent metal.

均勻分散Uniform dispersion

由於將石墨烯併入至金屬基體中之挑戰之一為實現均勻分散,因此covetic加工經由在外加電場內伴隨地剝離及潤濕石墨烯帶及/或顆粒(來自碳電極或者來自碳添加劑之分解)而克服了該問題。諸如氧及氫等雜質可經由顆粒表面處之氧化還原反應來管理,假設在該表面處有適當之感應電壓,以促進潤濕/分散。挑戰為以下各項之一:控制石墨烯帶及/或顆粒之結構完整性及均勻性(諸如關於大小、缺陷等之均勻性),以及控制在高溫下與金屬之化學反應性,以及控制顆粒在熔體之本體中及表面處之分佈。 Since one of the challenges of incorporating graphene into a metal matrix is achieving uniform dispersion, covetic processing overcomes this problem by concomitantly exfoliating and wetting graphene ribbons and/or particles (either from the carbon electrode or from decomposition of carbon additives) in an applied electric field. Impurities such as oxygen and hydrogen can be managed via redox reactions at the particle surface, provided that there is an appropriate induced voltage at the surface to promote wetting/dispersion. The challenge is one of controlling the structural integrity and uniformity of the graphene ribbons and/or particles (e.g. uniformity with respect to size, defects, etc.), as well as controlling the chemical reactivity with metals at high temperatures, and controlling the distribution of particles in the bulk of the melt and at the surface.

另外之複雜性Additional complexity

儘管金屬中之基本能量傳導模式(熱及電兩者)可(至少部分地)由電子進行且由諸如石墨烯等填料之結晶度及雜質控制以增強金屬基體複合材料之導熱性(其中傳導係經由石墨烯中之聲子進行),但亦需要與金屬晶格(另外地或替代地稱為支架、基體或結構)有一定程度之匹配及/或共格(諸如整體鍵合之奈米級碳)或者需要針對薄片之間的傳導具有最小薄片間隔(諸如接近度或網路)臨限值(諸如石墨烯將需要為單層或僅僅幾層且長度為數十奈米)。然而,關於強化金屬基體,為了合適之負載傳遞(注意,為了最大之負載傳遞,石墨烯之長度可大於~0.5μm),石墨烯可能需要化學鍵合(或在一些情況中,亦物理鍵合)至基體。除了依賴於碳(石墨烯)奈米填料與金屬晶格之間的共格及/或半共格彈性應變之固溶強化之外,離散之石墨烯奈米顆粒可用作晶界處之位錯堆積或釘紮之屏障(諸如霍爾佩奇(Hall Petch)晶粒細化,指一種藉由改變材料之平均微晶(晶粒)大小來強化材料之方法;該晶粒細化係基於觀察到晶界為位錯不可逾越之界限及晶粒內位錯之數量能夠影響在相鄰晶粒中形成應力之方式,此將最終激活位錯源且因此使相鄰晶粒中能夠發生變形;因此,藉由改變晶粒大小,可影響晶界處堆積之位錯數量及屈服強度),該兩者均能提高機械效能。 While the fundamental modes of energy conduction in metals (both thermal and electrical) can be (at least partially) carried out by electrons and controlled by the crystallinity and impurities of fillers such as graphene, to enhance the thermal conductivity of metal matrix composites (where conduction is via phonons in graphene), a certain degree of matching and/or coherence with the metal lattice (additionally or alternatively referred to as a scaffold, matrix or structure) is also required (e.g., bulk-bonded nanoscale carbon) or a minimum sheet spacing (e.g., proximity or network) threshold is required for conduction between sheets (e.g., graphene would need to be a monolayer or just a few layers and tens of nanometers in length). However, with respect to strengthening metal matrices, for adequate load transfer (note that for maximum load transfer, the length of graphene can be greater than ~0.5 μm), the graphene may need to be chemically (or in some cases, physically) bonded to the matrix. In addition to solid solution strengthening relying on coherent and/or semi-coherent elastic strain between the carbon (graphene) nanofiller and the metal lattice, discrete graphene nanoparticles can act as a barrier to dislocation stacking or pinning at grain boundaries (e.g., Hall et al., 2005). Petch) grain refinement refers to a method of strengthening a material by changing its average crystallite (grain) size; the grain refinement is based on the observation that grain boundaries are impassable boundaries for dislocations and that the amount of dislocations within a grain can affect the way stresses are formed in adjacent grains, which will ultimately activate dislocation sources and thus enable deformation to occur in adjacent grains; therefore, by changing the grain size, the amount of dislocations accumulated at the grain boundaries and the yield strength can be affected, both of which can improve mechanical performance.

同樣,由於其2D性質及高表面積,石墨烯除了沿金屬結構內之滑移平面對齊外,亦可沿晶界處之區域取向。無論所關注之性質是化學的、機械的、熱學的抑或是電學的,奈米填料與周圍金屬基體之晶體結構之對齊及匹配(在原子水平上)愈大,金屬基體複合結構之性質的增強及穩定性就愈大。 Likewise, due to its 2D nature and high surface area, graphene can be oriented along regions at grain boundaries in addition to being aligned along slip planes within the metal structure. Whether the property of interest is chemical, mechanical, thermal, or electrical, the greater the alignment and matching (at the atomic level) of the crystal structure of the nanofiller with the surrounding metal matrix, the greater the enhancement and stability of the properties of the metal matrix composite structure.

根本上,碳在金屬表面處之生長(非均質)或在熔體中自溶液中沉澱出來(均質)取決於碳在金屬中之溶解度(根據圖10右側所示之二元相圖)。諸如在接近金屬之熔點時,碳在純過渡金屬(大體上,及許多純金屬)中之溶解度很低,但該溶解度隨著溫度增加到遠高於金屬之熔點(諸如高達2,000℃及以上)而增加。碳在鎳中之溶解度(例如,在大約2.5%之過共晶點附近)為碳在純金屬中之較高 溶解度之一。應注意,向金屬中添加間隙雜質(諸如氧、硼或氮)或置換原子可能會影響(諸如潛在地增加)碳之溶解度。已經證明,碳在金屬中之溶解度愈高或熔融金屬之溫度愈高,隨著金屬冷卻及凝固,在金屬表面處沉澱之碳就愈厚。需要注意的係,碳在自由表面附近之溶解度更高,此與液-氣界面之界面能相組合有利於固體碳在金屬熔體-空氣界面處之沉澱。設備及用於操作該設備以克服伴隨該現象之問題的技術在與附圖及對應討論有關之情況下被涉及。 Fundamentally, whether carbon grows at the metal surface (heterogeneous) or precipitates out of solution in the melt (homogeneous) depends on the solubility of carbon in the metal (according to the binary phase diagram shown on the right side of Figure 10). The solubility of carbon in pure transition metals (in general, and in many pure metals) is low near the melting point of the metal, but increases with increasing temperature to well above the melting point of the metal (e.g., up to 2,000°C and above). The solubility of carbon in nickel (e.g., near the hypereutectic point of about 2.5%) is one of the higher solubilities of carbon in pure metals. It should be noted that the addition of interstitial impurities (such as oxygen, boron, or nitrogen) or substitutional atoms to the metal may affect (e.g., potentially increase) the solubility of carbon. It has been demonstrated that the higher the solubility of carbon in the metal or the higher the temperature of the molten metal, the thicker the carbon deposits at the metal surface as the metal cools and solidifies. It is noted that the solubility of carbon is higher near the free surface, which in combination with the interfacial energy of the liquid-air interface favors the precipitation of solid carbon at the metal melt-air interface. Apparatus and techniques for operating the apparatus to overcome the problems associated with this phenomenon are described in connection with the accompanying drawings and corresponding discussion.

定義及圖之使用Definition and Use of Diagrams

本說明書中使用之術語中之一些術語為便於參考而在以下定義。呈現之術語及其各別定義並不嚴格地限於此等定義—術語可進一步由該術語在本揭示案中之使用來定義。術語「例示性」在本文被用來意指用作實例、例子或例示。本文中被描述為「例示性」之任何態樣或設計不一定被解釋為比其他態樣或設計更佳或有優勢。而是,使用詞語例示性旨在以具體方式呈現概念。如在本申請案及所附申請專利範圍中使用的,術語「或」意欲表示包括性的「或」,而非排他性的「或」。亦即,除非另外指明或在上下文中清楚看到,否則「X採用A或B」意欲表示自然之包括性排列中之任一者。亦即,若X採用A,X採用B,或X採用A及B兩者,則「X採用A或B」在前述情況中之任一者下均被滿足。如本文所使用的,A或B中之至少一個意指A中之至少一個或B中之至少一個,或A及B兩者中之至少一個。換言之,該片語為析取的。本申請案及所附申請專利範圍中使用之冠詞「一個(a)」及「一種(an)」總體上應當被解釋為指「一或多個」,除非另有指定或自上下文中明顯看出係針對單數形式。 Some of the terms used in this specification are defined below for ease of reference. The terms presented and their respective definitions are not strictly limited to these definitions—a term may be further defined by the use of the term in this disclosure. The term "exemplary" is used herein to mean used as an example, instance, or illustration. Any aspect or design described herein as "exemplary" is not necessarily to be interpreted as being better or advantageous than other aspects or designs. Rather, the use of the word exemplary is intended to present the concept in a concrete manner. As used in this application and the attached application patent scope, the term "or" is intended to represent an inclusive "or" rather than an exclusive "or". That is, unless otherwise specified or clearly seen in the context, "X adopts A or B" is intended to represent any one of the natural inclusive arrangements. That is, if X employs A, X employs B, or X employs both A and B, then "X employs A or B" is satisfied in any of the foregoing situations. As used herein, at least one of A or B means at least one of A or at least one of B, or at least one of both A and B. In other words, the phrase is disjunctive. The articles "a" and "an" used in this application and the appended claims should generally be interpreted as meaning "one or more" unless otherwise specified or it is clear from the context that they are intended to be in the singular.

本文參考附圖描述了各個實施方式。應注意,附圖不一定按比例繪製,且在整個附圖中,相似結構或功能之元件有時藉由相似附圖標記表示。亦應注意,附圖僅旨在促進對所揭示之實施方式的描述——附圖並不代表對所有可能實施方式之詳盡處理,且不旨在對請求項之範疇進行任何限制。另外,展 示之實施方式不需要描繪在任何特定環境中使用之所有態樣或優點。 Various embodiments are described herein with reference to the accompanying drawings. It should be noted that the drawings are not necessarily drawn to scale and that elements of similar structure or function are sometimes represented by similar drawing labels throughout the drawings. It should also be noted that the drawings are intended only to facilitate the description of the disclosed embodiments—the drawings do not represent an exhaustive treatment of all possible embodiments and are not intended to impose any limitations on the scope of the claims. In addition, the embodiments shown do not necessarily depict all aspects or advantages for use in any particular environment.

結合特定實施方式描述之態樣或優點不一定限於該實施方式,且可在任何其他實施方式中實踐,即使未如此說明。在本說明書中提及「一些實施方式」或「其他實施方式」係指結合該實施方式描述之特定特徵、結構、材料或特性包括在至少一個實施方式中。因此,在本說明書之不同地方出現片語「在一些實施方式中」或「在其他實施方式中」不一定係指相同的一或多個實施方式。所揭示之實施方式不旨在限制請求項。 Aspects or advantages described in conjunction with a particular embodiment are not necessarily limited to that embodiment and may be practiced in any other embodiments, even if not so described. References to "some embodiments" or "other embodiments" in this specification refer to specific features, structures, materials, or characteristics described in conjunction with that embodiment being included in at least one embodiment. Therefore, the phrases "in some embodiments" or "in other embodiments" appearing in different places in this specification do not necessarily refer to the same one or more embodiments. The disclosed embodiments are not intended to limit the claims.

例示性實施方式之說明Description of Exemplary Implementation Methods

圖1A為示出了兩種不同之covetic材料形成技術102及分別由應用該等covetic材料形成技術中之每種技術產生之例性示材料的比較表1A00。 FIG. 1A is a comparative table 1A00 showing two different covetic material forming techniques 102 and exemplary materials produced by applying each of the covetic material forming techniques.

在用於產生covetic材料之習知金屬熔化方法103之情況中,固體碳被添加到金屬熔體中。該習知金屬熔化技術由在外加電流下跨固-液(諸如碳-金屬)界面之碳化物形成及相互擴散之動力學來管理,該電流提供額外能量來克服碳原子與金屬原子之間的堆垛層錯能。如此,用於形成covetic加工之習知金屬熔化技術與其他複合材料加工方法(诸如粉末冶金及/或熱軋)並無顯著區別,該複合材料製程涉及將第二相顆粒固結至金屬基體中。此等習知複合材料加工方法在分散及/或分佈、反應性及材料性質之可變性方面面臨許多挑戰。此外,習知covetic加工依賴於分批加工,且經常產生不一致之轉化產率以及所得性質之廣泛差異。 In the case of the known metal melting method 103 for producing covetic materials, solid carbon is added to a metal melt. The known metal melting technique is governed by the kinetics of carbide formation and interdiffusion across a solid-liquid (e.g., carbon-metal) interface under an applied electric current, which provides additional energy to overcome the stacking disparity energy between carbon atoms and metal atoms. As such, the known metal melting technique for forming covetic processing is not significantly different from other composite material processing methods (such as powder metallurgy and/or hot rolling), which involve consolidating second phase particles into a metal matrix. These known composite material processing methods face many challenges in terms of dispersion and/or distribution, reactivity, and variability of material properties. Furthermore, covetic processing is known to rely on batch processing and often results in inconsistent conversion yields and wide variations in the resulting properties.

如影像105描繪的,當使用習知金屬熔化方法103時,所得材料包括很多碳聚集體及/或團聚物,尤其係在晶界處及/或金屬晶格之表面處。此繼而:(1)限制碳增強晶格之作用;及(2)限制表面功能化之表面形態的可調諧性。作為比較,當使用目前揭示之技術時,所得材料表現出幾乎均勻之均質性(諸如沒有或實質上沒有聚集體及/或團聚物,尤其係在晶界及/或晶格表面處),該均質 性係由碳均勻分散於晶格中產生。此在均質性影像106中示出。 As depicted in image 105, when conventional metal melting methods 103 are used, the resulting material includes many carbon aggregates and/or agglomerates, particularly at grain boundaries and/or at the surfaces of the metal lattice. This in turn: (1) limits the role of carbon in reinforcing the lattice; and (2) limits the tunability of the surface morphology of the surface functionalization. In comparison, when the presently disclosed techniques are used, the resulting material exhibits nearly uniform homogeneity (e.g., no or substantially no aggregates and/or agglomerates, particularly at grain boundaries and/or at the surfaces of the lattice), which is caused by the carbon being evenly dispersed in the lattice. This is shown in homogeneity image 106.

諸如均質性影像106中描繪之covetic材料之特徵可在於許多所要之材料性質108,諸如均勻性、高碳載量、表面處之低碳含量等。此等性質為使用習知金屬熔化方法103形成之材料未表現出的極其所要之材料性質。因此,要尋求的係克服習知金屬熔化方法103之缺點的改良方法。 The covetic material, as depicted in the homogeneity image 106, may be characterized by a number of desirable material properties 108, such as homogeneity, high carbon loading, low carbon content at the surface, etc. These properties are extremely desirable material properties that are not exhibited by materials formed using conventional metal melting methods 103. Therefore, improved methods that overcome the shortcomings of conventional metal melting methods 103 are sought.

一種此類改良方法涉及電漿噴塗炬方法104。電漿噴塗炬方法之應用導致covetic材料之產率一致,因此克服了習知金屬熔化方法之產率缺點。此外,應用電漿噴塗炬方法所產生之covetic材料具有上述改良之機械性質、改良之熱學性質及改良之電學性質,因此克服了習知金屬熔化方法之所得材料的缺點。 One such improved method involves a plasma torch method 104. The application of the plasma torch method results in a consistent yield of covetic materials, thereby overcoming the yield disadvantages of conventional metal melting methods. In addition, the covetic material produced by the application of the plasma torch method has the above-mentioned improved mechanical properties, improved thermal properties, and improved electrical properties, thereby overcoming the disadvantages of the materials obtained by conventional metal melting methods.

改良方法Improved methods

如所示,電漿噴塗炬方法104可經組態以使用引入之輸入材料(指提供氣態形式之含碳原料物質,諸如甲烷,且經由施加被引導通過甲烷氣體等之MW能量對其供能)。然而,藉由在高溫下離解含碳氣體(諸如甲烷或其他烴源),自限性單層碳—特別係原始石墨烯—可生長至金屬(諸如銅、金、鋅、錫及鉛)晶格上或其中。單層之數量至少部分地取決於碳在金屬中之溶解度。石墨烯膜在金屬基板上之生長動力學、結合及最終結構取決於金屬之價電子及對稱性(緊密堆積平面)。類似地,金屬可在碳上生長,優先在碳之缺陷位點處或亦在選擇性氧或氫終止位點處成核及生長。然後可製作單層碳及金屬之交替堆疊,以實現石墨烯增強金屬複合結構之增強性質。 As shown, the plasma torch process 104 can be configured to use an introduced input material (referring to a carbon-containing feedstock material provided in gaseous form, such as methane, and powered by applying MW energy directed through the methane gas, etc.). However, by dissociating a carbon-containing gas (such as methane or other hydrocarbon source) at high temperature, self-limiting monolayers of carbon - particularly pristine graphene - can be grown onto or into a metal (such as copper, gold, zinc, tin, and lead) lattice. The number of monolayers depends at least in part on the solubility of carbon in the metal. The growth kinetics, bonding, and final structure of graphene films on metal substrates depend on the valence electrons and symmetry (closely packed planes) of the metal. Similarly, metals can grow on carbon, nucleating and growing preferentially at defect sites of carbon or also at selective oxygen or hydrogen termination sites. Alternating stacks of monolayers of carbon and metal can then be made to achieve the reinforcing properties of graphene-enhanced metal composite structures.

使用微波電漿反應器,原始3D少層石墨烯顆粒可自烴氣體源連續成核及生長。另外,藉由將選擇性元素添加到電漿氣體料流中,可將該等選擇性元素併入於3D石墨烯顆粒支架中。微波電漿反應器製程提供了獨特之反應環境,其中可在非平衡條件下控制氣-固反應(諸如化學反應可由電離勢及動量以及熱能獨立控制)。反應物可以固體、液體或氣體之形式插入於電漿反應器區域中, 以獨立地控制獨特之非平衡結構(諸如金屬上之石墨烯及石墨烯上之金屬)的成核及生長動力學。 Using a microwave plasma reactor, pristine 3D few-layer graphene particles can be continuously nucleated and grown from a hydrocarbon gas source. In addition, by adding selective elements to the plasma gas stream, these selective elements can be incorporated into the 3D graphene particle scaffold. The microwave plasma reactor process provides a unique reaction environment in which gas-solid reactions can be controlled under non-equilibrium conditions (such as chemical reactions can be independently controlled by ionization potential and momentum and thermal energy). Reactants can be inserted into the plasma reactor region in the form of solids, liquids, or gases to independently control the nucleation and growth dynamics of unique non-equilibrium structures (such as graphene on metal and metal on graphene).

例如,為了產生奈米級之整合石墨烯-金屬複合材料,可將精細奈米級金屬顆粒與烴氣體(諸如甲烷)一起引入微波電漿炬中。甲烷離解成氫及碳(諸如使用微波電漿之理想能量形成C及H2),然後碳可成核並將有序之石墨烯生長至金屬顆粒之半熔融表面上。非平衡能量條件可藉由對製程條件進行調整以相對於碳反應性及向金屬表面之遞送獨立地控制金屬之溫度來產生。在受控之低能量下,經電離之氫(或其他離子)可用於撞擊/濺射正在生長之石墨烯-金屬表面,而不會破壞石墨烯-金屬組合物之結構。此隨後會促進交替石墨烯-金屬層之進一步生長。另外,根據在電漿反應區域內之停留時間及能量,可產生具有特定性質之金屬-石墨烯結構,當金屬-石墨烯結構在受控溫度下噴塗至基板上後迅速冷卻時,該等特定性質被保留。在電漿內以受控能量形成金屬-石墨烯結構以及對基板溫度之控制在此等covetic材料之整個演變過程中提供了對能量條件之獨立控制。 For example, to create nanoscale integrated graphene-metal composites, fine nanoscale metal particles can be introduced into a microwave plasma torch along with a hydrocarbon gas such as methane. The methane dissociates into hydrogen and carbon (such as C and H2 using the ideal energy of the microwave plasma), and the carbon can then nucleate and grow ordered graphene onto the semi-molten surface of the metal particles. Non-equilibrium energy conditions can be created by adjusting the process conditions to independently control the temperature of the metal relative to the carbon reactivity and delivery to the metal surface. At controlled low energies, the ionized hydrogen (or other ions) can be used to impact/splash the growing graphene-metal surface without disrupting the structure of the graphene-metal composite. This then promotes further growth of alternating graphene-metal layers. In addition, depending on the residence time and energy in the plasma reaction zone, metal-graphene structures with specific properties can be produced, which are retained when the metal-graphene structure is sprayed onto the substrate at a controlled temperature and then quickly cooled. The formation of metal-graphene structures with controlled energy in the plasma and the control of the substrate temperature provide independent control of the energy conditions during the entire evolution of these covetic materials.

石墨烯可經由「濺射」(指在固體材料自身受到電漿或氣體之高能顆粒轟擊後,該材料之微觀顆粒自其表面射出之現象;可使濺射作用於極精細之材料層之事實在科學及工業中經常被利用——在科學及工業中,該濺射用於執行精確蝕刻,進行分析技術,及在光學塗層、半導體裝置及奈米技術產品等之製造中沉積薄膜層)而被施加(及/或沉積)至金屬或含金屬之材料層上。當與目前討論之MW電漿反應器一起使用時,如此描述之此濺射可藉由控制在電漿反應區域內之停留時間及能量來控制以促進交替石墨烯-金屬層之生長。此等交替之石墨烯-金屬層被組織在呈規則(諸如晶體)構型之原子的相干平面中。當石墨烯-金屬層被快速淬火(在材料科學領域,淬火或快速/急劇淬火係指工件在水、油或空氣中受控快速冷卻,以獲得某些材料性質;淬火為一種熱處理,其藉由減少 時間窗口來防止或控制非所要之低溫過程諸如相變發生,在該時間窗口期間此等非所要之反應在熱力學上係有利的且在動力學上係可行的;例如,淬火可減小金屬材料及塑膠材料二者之晶粒大小,從而增加其硬度)至較冷之基板上時,該晶體構型得以保留。正如所描述的,快速淬火用於基本上將石墨烯以在電漿反應器內形成之所要晶體構型「凍結」(指保持為實質固態狀態,而不僅僅是自液體至固體之傳統相變定義)至金屬。所得材料內及表面處之均質性非常均勻。此非常均勻之均質性可用於與已用金屬熔化方法104形成之材料進行區分。原因在於金屬熔化方法104不能獨立於熱能來控制離子能量。更具體地,因為金屬熔化方法104不能獨立於熱能來達成所要之較高離子能,因此金屬熔化反應室中之溫度可能過高而無法使石墨烯-金屬層被組織在呈所要晶體構型之原子相干平面中。 Graphene can be applied (and/or deposited) onto a layer of metal or metal-containing material by "sputtering" (the phenomenon in which microscopic particles of a solid material are ejected from its surface after the solid material itself has been bombarded with energetic particles from a plasma or gas; the fact that sputtering can act on very fine layers of material is often exploited in science and industry - in science and industry, sputtering is used to perform precision etching, analytical techniques, and to deposit thin film layers in the manufacture of optical coatings, semiconductor devices, and nanotechnology products). When used with the MW plasma reactors currently discussed, the sputtering thus described can be controlled by controlling the residence time and energy in the plasma reaction zone to promote the growth of alternating graphene-metal layers organized in coherent planes of atoms in a regular (e.g., crystalline) configuration. The crystal structure is preserved when the graphene-metal layer is rapidly quenched (in materials science, quenching or rapid/sharp quenching refers to the controlled rapid cooling of a workpiece in water, oil or air to obtain certain material properties; quenching is a heat treatment that prevents or controls the occurrence of undesirable low-temperature processes such as phase changes by reducing the time window during which such undesirable reactions are thermodynamically favorable and kinetically feasible; for example, quenching can reduce the grain size of both metals and plastics, thereby increasing their hardness) onto a cooler substrate. As described, rapid quenching is used to essentially "freeze" (meaning to remain in a substantially solid state, not just the traditional phase change definition from liquid to solid) the graphene into the metal in the desired crystalline configuration formed in the plasma reactor. The resulting material is very uniform in homogeneity both within and at the surface. This very uniform homogeneity can be used to distinguish it from materials that have been formed using the metal melting process 104. The reason is that the metal melting process 104 cannot control the ion energy independently of thermal energy. More specifically, because the metal melting process 104 cannot achieve the desired higher ion energy independently of thermal energy, the temperature in the metal melting reactor may be too high to cause the graphene-metal layers to be organized in atomically coherent planes in the desired crystalline configuration.

因此,當使用金屬熔化方法104時,石墨烯-金屬之所要晶體構型絕不會出現,因此在石墨烯-金屬層淬火至較冷基板上時不能保留所要之晶體構型。而是,當使用金屬熔化方法104時,非所要之碳沉澱發生(諸如碳自熔體中沉澱出來),此繼而導致非所願地形成聚集體及/或團聚物,繼而導致所得組合物之不均勻性。所得組合物之該不均勻性可能會導致所得組合物之化學及/或物理(機械)特性不太理想,包括但不限於過早之機械故障。 Therefore, when using the metal melting method 104, the desired crystal configuration of the graphene-metal never occurs and is therefore not retained when the graphene-metal layer is quenched onto a cooler substrate. Instead, when using the metal melting method 104, undesirable carbon precipitation occurs (e.g., carbon precipitates out of the melt), which in turn leads to undesirable formation of aggregates and/or agglomerates, which in turn leads to inhomogeneity in the resulting composition. This inhomogeneity in the resulting composition may result in less than ideal chemical and/or physical (mechanical) properties of the resulting composition, including but not limited to premature mechanical failure.

圖1B呈現了高解析度透射電子顯微術影像114及高解析度能量色散光譜x射線影像116。為方便起見,此處亦示出了圖1A之均質性影像106。 FIG1B shows a high-resolution transmission electron microscopy image 114 and a high-resolution energy dispersive spectroscopy x-ray image 116. For convenience, the homogeneity image 106 of FIG1A is also shown here.

如該組例示性影像所描繪,碳均勻地分佈於金屬晶格中。在高解析度透射電子顯微術影像114中對此進行強調。此外,藉由高解析度能量色散光譜x射線影像116清楚地示出了金屬晶格中極高之碳載量。在此實例中,碳載量形成整個銅-碳晶格之約60%。此示出於高解析度能量色散光譜x射線影像116中。在該特定影像中,較暗之區域為碳,且較亮之區域(呈現為點)為銅。 As depicted in this set of exemplary images, the carbon is evenly distributed in the metal lattice. This is emphasized in the high-resolution transmission electron microscopy image 114. In addition, the extremely high carbon loading in the metal lattice is clearly shown by the high-resolution energy dispersive spectroscopy x-ray image 116. In this example, the carbon loading forms about 60% of the entire copper-carbon lattice. This is shown in the high-resolution energy dispersive spectroscopy x-ray image 116. In this particular image, the darker areas are carbon, and the lighter areas (appearing as dots) are copper.

如自影像中可看出,且具體地,如自高解析度能量色散光譜x射線影像116之圖案中可看出,碳及母體金屬(諸如在該情況下為銅)係均勻分散的。如所示出,該均勻晶格級分散存在於表面處,此外,該均勻晶格級分散亦存在於母體金屬之深處。圖20A1、圖20A2及圖20B給出了covetic材料之另外影像,該等圖緊隨(1)材料演變過程、(2)電漿噴塗炬設備及(3)電漿噴塗炬之各種組態之討論。 As can be seen from the images, and specifically from the pattern of high resolution energy dispersive spectroscopy x-ray image 116, the carbon and the parent metal (such as copper in this case) are uniformly dispersed. As shown, the uniform lattice-level dispersion exists at the surface, and in addition, the uniform lattice-level dispersion also exists deep in the parent metal. Figures 20A1, 20A2, and 20B provide additional images of covetic materials, which are followed by a discussion of (1) material evolution processes, (2) plasma spray torch equipment, and (3) various configurations of plasma spray torches.

在一個使用場景中,圖1B中之covetic材料可使用可調諧微波電漿炬製造,該可調諧微波電漿炬以高速率及高體積產生整合之石墨烯-金屬複合膜。現在簡要討論一種特定製造製程,在該特定製造製程期間石墨烯生長至小熔融金屬顆粒上。 In one use scenario, the covetic material in Figure 1B can be fabricated using a tunable microwave plasma torch that produces integrated graphene-metal composite films at high rates and volumes. A specific fabrication process during which graphene is grown onto small molten metal particles is now briefly discussed.

圖2描繪了用於將石墨烯生長至小熔融顆粒上之製造製程200。作為選項,製造製程200或其任何態樣之一或多種變型可在本文所述之實施方式之架構及功能的上下文中實施。製造製程200或其任何態樣可在任何環境中實施。 FIG. 2 depicts a fabrication process 200 for growing graphene onto small molten particles. Alternatively, fabrication process 200 or one or more variations thereof may be implemented within the context of the architecture and functionality of the embodiments described herein. Fabrication process 200 or any aspect thereof may be implemented in any environment.

一種可能方法為使用「非平衡能量」微波電漿炬以獨立於碳之產生來提供對金屬溫度之非平衡控制。隨後將此電漿炬能量引導至熔融及/或半熔融金屬顆粒表面。該種技術允許有時間在熔體上進行生長。炬內產生之熔體(或半熔體或核殼材料)上之生長物將經由主電漿羽流流出至要在上面進行生長之金屬表面,且隨後快速淬火。該種技術提供了用於生長厚膜之手段,在分層時,厚膜可生長成均質厚錠及/或生長至要後加工或重熔到應用中之組成部件中或上。 One possible approach is to use a "non-equilibrium energy" microwave plasma torch to provide non-equilibrium control of the metal temperature independently of the generation of carbon. This plasma torch energy is then directed to the surface of molten and/or semi-molten metal particles. This technique allows time for growth to occur on the melt. The growth on the melt (or semi-molten or core material) generated in the torch will flow out through the main plasma plume to the metal surface on which growth is to occur and then rapidly quenched. This technique provides a means for growing thick films that can be grown into homogeneous ingots when layered and/or grown into or onto component parts that are subsequently processed or remelted into applications.

另外,圖2被呈現來展示在將石墨烯生長至小熔融顆粒上時獨立控制組成材料溫度及氣-固反應化學之影響。圖2示出了經過若干covetic材料製造過程之演變;且呈現了在基於電漿炬之covetic材料之形成中使用的製程。 Additionally, Figure 2 is presented to demonstrate the effects of independently controlling the constituent material temperature and gas-solid reaction chemistry when growing graphene onto small molten particles. Figure 2 shows the evolution of covetic material through several fabrication processes; and presents the process used in the formation of plasma torch-based covetic materials.

如所示出,自電漿炬中離開之半固體顆粒可以加成、逐層之方式沉積至溫度受控之基板上。與操作流量以及功率控制及其他組態受到限制之標準 電漿炬不同,可操作所討論之微波電漿炬以獨立控制組成材料溫度以及氣-固反應化學。 As shown, semisolid particles exiting the plasma torch can be deposited in an additive, layer-by-layer manner onto a temperature-controlled substrate. Unlike standard plasma torches, which are limited in operating flow and power control and other configurations, the microwave plasma torch discussed can be operated to independently control the constituent material temperature and the gas-solid reaction chemistry.

自以上揭示內容中可看出,微波電漿源可產生(例如):(1)更高之電漿密度;(2)具有更窄離子能量分佈之離子能量;及(3)改良之塗層性質。此至少部分歸因於在2.45GHz下改良之功率耦合及(電磁能)吸收。壓力相關之典型電子溫度在1eV至15eV之數量級,從而產生>1011cm-3之電漿密度。此類低電子溫度不僅在控制電漿化學方面有利,而且在限制離子能量方面亦係有利的,其中基於氬氣之同軸微波電漿之離子能量通常在5eV至80eV之範圍內。由於使用此等高密度電漿形成之窄電漿鞘,防止離子能量分佈之碰撞展寬,因此導致支持對某些膜沉積過程之精細控制的尖銳離子能量分佈。另外,經由將脈衝功率用於微波電漿,可形成及控制非平衡能量。在微波能量之施加期間,功率被遞送至整個將要形成電漿之體積中,因此能量以逐步碰撞能量模式積累。 As can be seen from the above disclosure, microwave plasma sources can produce (for example): (1) higher plasma density; (2) ion energy with a narrower ion energy distribution; and (3) improved coating properties. This is at least partially due to improved power coupling and (electromagnetic energy) absorption at 2.45 GHz. The typical electron temperature related to pressure is on the order of 1 eV to 15 eV, resulting in a plasma density of >10 11 cm -3 . Such low electron temperatures are not only beneficial in controlling plasma chemistry, but also in limiting ion energy, where the ion energy of argon-based coaxial microwave plasma is typically in the range of 5 eV to 80 eV. Because of the narrow plasma sheath formed using these high density plasmas, collisional broadening of the ion energy distribution is prevented, resulting in a sharp ion energy distribution that supports fine control of certain film deposition processes. In addition, by applying pulsed power to the microwave plasma, non-equilibrium energy can be created and controlled. During the application of microwave energy, power is delivered to the entire volume of the plasma to be formed, so energy is accumulated in a stepwise collisional energy mode.

圖2之前述討論包括用於施加微波能量功率之技術,該技術進一步詳細揭示如下。 The foregoing discussion of FIG. 2 includes a technique for applying microwave energy power, which technique is further disclosed in detail below.

圖3描繪了示出如何使用脈衝微波能量源來將石墨烯生長至小熔融顆粒上的電漿能量狀態表300。 FIG3 depicts a plasma energy state diagram 300 showing how a pulsed microwave energy source may be used to grow graphene onto small molten particles.

由於改良了在2.45GHz下之功率耦合及吸收,微波電漿源有潛力達成更高之電漿密度、離子能量分佈更窄之離子能量及改良之塗層性質。壓力相關之典型電子溫度在1eV至15eV之數量級,從而產生>1011cm-3之電漿密度。此類低電子溫度不僅在控制電漿化學方面有利,而且在限制離子能量方面亦係有利的,其中基於氬氣之同軸微波電漿之離子能量通常在5eV至80eV之範圍內。由於使用此等高密度電漿形成之窄等離子鞘,防止離子能量分佈之碰撞展寬,因此導致尖銳離子能量分佈,此對於一些膜沉積製程之精細控制係必要的。另外,經由使用遞送至微波反應器之脈衝功率,可形成及控制電漿非平衡能量。 在微波能量之施加期間,功率被遞送至整個將要形成電漿之體積中,因此能量以逐步碰撞能量模式積累。 Due to improved power coupling and absorption at 2.45 GHz, microwave plasma sources have the potential to achieve higher plasma density, ion energy with narrower ion energy distribution and improved coating properties. Typical pressure-dependent electron temperatures are on the order of 1 eV to 15 eV, resulting in plasma densities > 10 11 cm -3 . Such low electron temperatures are beneficial not only in controlling plasma chemistry, but also in limiting ion energies, where ion energies for coaxial microwave plasmas based on argon are typically in the range of 5 eV to 80 eV. Because of the narrow plasma sheath formed using such high density plasmas, collisional broadening of the ion energy distribution is prevented, resulting in a sharp ion energy distribution, which is necessary for fine control of some film deposition processes. In addition, by using pulsed power delivered to the microwave reactor, plasma non-equilibrium energy can be generated and controlled. During the application of microwave energy, power is delivered to the entire volume of the plasma to be formed, so that energy is accumulated in a stepwise collisional energy mode.

一旦初始電漿在體積之大部分中形成,能量處於最大值之遞送天線繼續以高度局部化之方式增加。附近之電漿密度略微減小,直至電漿收縮。關於用於製造及使用脈衝微波能量源之一般方法的其他細節在2019年6月25日發佈之美國專利公開案No.10,332,726中描述,該美國專利公開案特此以全文引用之方式併入。 Once the initial plasma is formed in a large portion of the volume, the delivery antenna at the maximum energy continues to increase in a highly localized manner. The plasma density decreases slightly nearby until the plasma contracts. Additional details regarding a general method for making and using a pulsed microwave energy source are described in U.S. Patent Publication No. 10,332,726, published on June 25, 2019, which is hereby incorporated by reference in its entirety.

圖3示出了電漿之初始能量在非平衡狀態下要高得多,直至該電漿收縮到低得多之穩定溫度。更具體地,電漿能量狀態圖描繪了自初始高能量非平衡狀態至較低能量穩定平衡狀態之轉變。一旦初始電漿形成,能量處於最大值之遞送天線將繼續以高度局部化之方式增加,直至電漿收縮且由於能量屏蔽而在室之其餘部分中損失。 Figure 3 shows that the initial energy of the plasma is much higher in the non-equilibrium state until the plasma contracts to a much lower stable temperature. More specifically, the plasma energy state diagram depicts the transition from the initial high energy non-equilibrium state to the lower energy stable equilibrium state. Once the initial plasma is formed, the energy of the delivery antenna at the maximum value will continue to increase in a highly localized manner until the plasma contracts and is lost in the rest of the chamber due to energy shielding.

可控制脈衝微波能量源,以便最佳化用於將石墨烯生長至小熔融顆粒上之電子溫度。此在壓力>>20托之情況下特別有效。為了保證電漿化學離解為均質的且材料塗層亦為均質的,必須對室之環境進行控制。 The pulsed microwave energy source can be controlled to optimize the electron temperature used to grow graphene onto small molten particles. This is particularly effective at pressures >>20 Torr. The chamber environment must be controlled to ensure that the plasma chemical dissociation is homogeneous and the material coating is also homogeneous.

如圖3所示,能量曲線圖表明初始能量較高,且一段時間後收縮到較低水準,其停留於該較低水準,直至移除功率為止。電漿熄滅,且在重新啟動之後,再次遵循能量循環。藉由縮短初始電漿點火與其達到穩定之間的時間,電漿主要保留於系統本體中,在該系統本體中可能發生材料之更均質離解。初始電漿點火與其達到穩定時之間的時間縮短可藉由控制脈衝之頻率及占空比來完成。 As shown in Figure 3, the energy curve shows that the initial energy is high and after a period of time it shrinks to a lower level, where it stays until the power is removed. The plasma extinguishes and, after restarting, follows the energy cycle again. By shortening the time between the initial plasma ignition and when it reaches stability, the plasma is primarily retained in the body of the system where a more homogeneous dissociation of the material can occur. The shortening of the time between the initial plasma ignition and when it reaches stability can be accomplished by controlling the frequency and duty cycle of the pulses.

關於圖4示出及描述一種用於控制脈衝微波反應器中之電子溫度之技術。 A technique for controlling the temperature of electrons in a pulsed microwave reactor is shown and described with respect to FIG. 4 .

圖4描繪了用於將石墨烯生長至小熔融顆粒上之電子溫度控制技術 400。作為選項,電子溫度控制技術400或其任何態樣之一或多種變型可在本文描述之實施方式之架構及功能的上下文中實施。電子溫度控制技術400或其任何態樣可在任何環境中實施。 FIG. 4 depicts an electronic temperature control technique 400 for growing graphene onto small molten particles. Alternatively, the electronic temperature control technique 400 or one or more variations thereof may be implemented in the context of the architecture and functionality of the embodiments described herein. The electronic temperature control technique 400 or any aspect thereof may be implemented in any environment.

圖4展示了關於將幾層石墨烯生長至熔融奈米級大小之顆粒上而非將碳混合至熔融漿料本體中的態樣。具體地,該圖係關於其經由控制微波脈衝頻率而對控制電漿溫度之貢獻來呈現。 Figure 4 shows the state of growing a few layers of graphene onto molten nano-sized particles rather than mixing carbon into the bulk of the molten slurry. Specifically, the figure is presented with respect to its contribution to controlling the plasma temperature by controlling the microwave pulse frequency.

經由控制脈衝頻率進行之電漿溫度控制Plasma temperature control by controlling pulse frequency

如前述圖3所描繪,能量曲線圖表明初始能量較高,且一段時間後收縮到較低水準,其停留於該較低水準,直至移除功率為止。電漿熄滅,且在重新啟動之後,再次遵循能量循環。藉由縮短初始電漿點火與達到穩定之間的時間,電漿主要保留於系統本體中,在該系統本體中可能發生材料之更均質離解。 As depicted in Figure 3 above, the energy curve shows that the initial energy is high and after a period of time it shrinks to a lower level where it stays until the power is removed. The plasma extinguishes and upon restarting, the energy cycle is followed again. By shortening the time between initial plasma ignition and reaching stability, the plasma is primarily retained in the bulk of the system where a more homogeneous dissociation of the material can occur.

如圖4所示,效果實質上取決於微波能量源之接通/斷開循環之定時。藉由控制脈衝頻率,可產生最佳化學離解及均勻塗層。此外,藉由設置脈衝頻率,亦可控制電漿之平均溫度。 As shown in Figure 4, the effect essentially depends on the timing of the on/off cycle of the microwave energy source. By controlling the pulse frequency, optimal chemical dissociation and uniform coating can be produced. In addition, by setting the pulse frequency, the average temperature of the plasma can also be controlled.

微波電漿炬中之電漿溫度控制Plasma temperature control in microwave plasma torch

本文討論之整合式微波電漿炬用於解決整合之第二相碳-金屬複合結構的形成,與現有之金屬合金及習知複合材料加工方法相比,該複合結構具有增強之機械、熱學及電學性質。此外,微波電漿炬可用於將碳-金屬複合塗層及顆粒直接形成在高價值資產組件上。此外,前述方法及設備滿足與改良之配電及有效變壓器及熱交換器效能相關的許多清潔能源目標。 The integrated microwave plasma torch discussed herein is used to address the formation of integrated second phase carbon-metal composite structures having enhanced mechanical, thermal and electrical properties compared to existing metal alloys and known composite material processing methods. In addition, the microwave plasma torch can be used to form carbon-metal composite coatings and particles directly onto high value asset components. In addition, the aforementioned method and apparatus meet many clean energy goals related to improved power distribution and efficient transformer and heat exchanger performance.

微波電漿炬實際應用Microwave Plasma Torch Practical Application

使用整合式微波電漿炬技術,材料可以較快之速率經濟地(諸如有成本效益地)沉積及/或形成且可以各種不同組態應用。此技術之捐助者包括各種能 源生產行業,特別係與傳輸及儲存運輸行業、軍事設備行業以及許多其他製造業相關。作為一個具體實際應用實例,飛行器之金屬表面可藉由電漿噴塗處理,以在金屬-空氣界面處產生covetic材料。因此金屬表面變得不受腐蝕之影響。另外,靠近表面之碳原子允許其他材料化學地鍵合至碳原子及/或粘附至表面。可化學地鍵合至碳原子之前述其他材料可基於各種實際應用中出現之要求進行選擇。 Using integrated microwave plasma torch technology, materials can be deposited and/or formed economically (i.e., cost-effectively) at a faster rate and can be applied in a variety of different configurations. Donors of this technology include various energy production industries, particularly related to the transmission and storage transportation industry, the military equipment industry, and many other manufacturing industries. As a specific practical application example, the metal surface of an aircraft can be treated by plasma spraying to produce a covetic material at the metal-air interface. The metal surface thus becomes impervious to corrosion. In addition, the carbon atoms close to the surface allow other materials to chemically bond to the carbon atoms and/or adhere to the surface. The aforementioned other materials that can chemically bond to the carbon atoms can be selected based on the requirements that arise in various practical applications.

作為另一個具體實際應用實例,空中交通工具(諸如飛機、直升飛機、無人機、射彈、導彈等)之金屬表面可藉由電漿噴塗處理,以產生起到紅外遮蔽物(諸如偵測對策)作用之covetic材料塗層。 As another specific practical application example, the metal surfaces of air vehicles (such as airplanes, helicopters, drones, projectiles, missiles, etc.) can be treated by plasma spraying to produce a covetic material coating that acts as an infrared shield (such as a detection countermeasure).

圖5展示了用於將石墨烯生長至小熔融顆粒上之雙電漿炬設備500。作為選項,雙電漿炬設備500或其任何態樣之一或多種變型可在本文描述之實施方式之架構及功能的上下文中實施。雙電漿炬設備500或其任何態樣可在任何環境中實施。 FIG. 5 shows a dual plasma torch apparatus 500 for growing graphene onto small molten particles. As an option, the dual plasma torch apparatus 500 or one or more variations of any aspect thereof may be implemented in the context of the architecture and functionality of the embodiments described herein. The dual plasma torch apparatus 500 or any aspect thereof may be implemented in any environment.

所示之設備設置使用:(1)用於將熔融金屬供應至受熱基板(Al、Cu、Ag等)之表面的金屬電漿噴塗炬;(2)用於將電離之碳及電漿自由基遞送至熔融表面以便使covetic生長至熔融金屬上的微波電漿炬。 The equipment set-up shown uses: (1) a metal plasma spraying torch for supplying molten metal to the surface of a heated substrate (Al, Cu, Ag, etc.); and (2) a microwave plasma torch for delivering ionized carbon and plasma radicals to the molten surface to enable covetic growth onto the molten metal.

系統被插入於惰性氣體環境或氣氛受控之室中,以提供對材料氧化之更佳控制。在一個實施方式中,圖5中之炬的設置及操作在表1示出,其細節在下文討論。 The system is inserted into an inert gas environment or a controlled atmosphere chamber to provide better control over the oxidation of the material. In one embodiment, the setup and operation of the torch in FIG. 5 are shown in Table 1, the details of which are discussed below.

Figure 112134605-A0305-12-0030-1
Figure 112134605-A0305-12-0030-1

步驟D1:反應物材料鑒定及選擇Step D1: Identification and selection of reactant materials

可將任何數量之金屬與亞穩態碳物質同時進行電漿噴塗,以形成奈米碳-金屬複合結構。當以高於熱力學溶解度極限之濃度形成2D石墨烯時,可使用具有高電導率及熱導率之不同金屬。在一些情況下,選擇了兩種不同金屬,該等金屬各自具有不同之碳溶解度極限及/或不同之熔點及/或不同之密度及/或不同之晶體結構。 Any amount of metal can be plasma sprayed simultaneously with the metastable carbon material to form a nanocarbon-metal composite structure. When forming 2D graphene at concentrations above the thermodynamic solubility limit, different metals with high electrical and thermal conductivity can be used. In some cases, two different metals are selected, each of which has a different carbon solubility limit and/or a different melting point and/or a different density and/or a different crystal structure.

步驟D2:微波及 標準 電漿噴塗炬之選擇、修改及驗證 Step D2: Microwave and " Standard " Plasma Spray Torch Selection, Modification and Validation

圖5之設備可(在某些實施方式中)實質上由“標準”之現成電漿噴塗及微波電漿炬構成。具有兩個炬允許兩個不同之加工步驟,亦即:(1)金屬之初始熔化;及(2)石墨烯薄片自烴源成核/生長。兩個炬中之每一個炬可彼此獨立控制。 The apparatus of FIG. 5 may (in certain embodiments) be substantially comprised of "standard" off-the-shelf plasma spray and microwave plasma torches. Having two torches allows for two distinct processing steps, namely: (1) initial melting of the metal; and (2) nucleation/growth of graphene flakes from a hydrocarbon source. Each of the two torches may be controlled independently of the other.

如圖5所示,將兩個炬並置以用於並行或按順序操作。具體地,具有低電子溫度及高電子密度之微波電漿可用於最佳化石墨烯形成(包括碳過飽和臨限值下之成核速率),而標準電漿噴塗炬可用於將金屬粉末/顆粒加熱至熔融或半熔融狀態,且然後使顆粒(及成核電離碳/石墨烯)朝基板加速。可協調兩個獨立之流動料流以在半熔融顆粒表面上實現精細級石墨烯生長。在一些情況下,雙炬組態包括用於在炬之出口料流處或附近及在基板表面處之衝擊區域內及周圍保持惰性氣氛(諸如覆蓋氣體)的構件。此佈置為有利的以使該物質組合物中之大氣氣體如一般熟習此項技術者將理解的,諸如氧氣、氮氣、水蒸氣等)含量(最小化或較佳地防止包含大氣氣體,該等大氣氣體可能會不利地影響碳與金屬原子之間的鍵合。因此,在某些實施方式中,雙炬系統經組態以插入完全受控之惰性氣體環境(諸如室)中,以便提供對材料氧化之有效控制。 As shown in FIG5 , the two torches are juxtaposed for parallel or sequential operation. Specifically, a microwave plasma with a low electron temperature and high electron density can be used to optimize graphene formation (including carbon supersaturation and nucleation rate at critical values), while a standard plasma spraying torch can be used to heat the metal powder/particles to a molten or semi-molten state and then accelerate the particles (and nucleated ionized carbon/graphene) toward the substrate. The two independent flow streams can be coordinated to achieve fine-scale graphene growth on the surface of the semi-molten particles. In some cases, the dual torch configuration includes components for maintaining an inert atmosphere (such as a blanket gas) at or near the outlet stream of the torch and in and around the impact zone at the substrate surface. This arrangement is advantageous to minimize or preferably prevent the inclusion of atmospheric gases in the composition of matter (such as oxygen, nitrogen, water vapor, etc.) which may adversely affect the bonding between carbon and metal atoms, as will be understood by those skilled in the art. Therefore, in certain embodiments, the dual torch system is configured to be inserted into a fully controlled inert gas environment (such as a chamber) to provide effective control over the oxidation of the material.

步驟D3:電漿加工參數之基本原理及定義Step D3: Basic principles and definitions of plasma processing parameters

選擇反應物(諸如烴)及惰性氣體及流動以確保電漿之穩定性,並確保控制電漿內之成核及生長過程(諸如給定之氣體混合物及流速的過飽和臨限 值)。在自電漿至基板之游移期間,亞穩態碳之加速速率及溫度受到控制。對應地,設置標準電漿噴塗炬之製程條件,以便產生碳可撞擊於其上並發生反應之固結薄膜。控制表面溫度及局部氣相環境,以便促進亞穩態碳相之相互作用及生長。 The reactants (such as hydrocarbons) and inert gases and flows are selected to ensure plasma stability and to ensure control of nucleation and growth processes within the plasma (such as supersaturation and thresholds for a given gas mixture and flow rate). The acceleration rate and temperature of the metastable carbon are controlled during its transition from the plasma to the substrate. Accordingly, the process conditions of the standard plasma spray torch are set to produce a solidified film on which the carbon can impinge and react. The surface temperature and local gas phase environment are controlled to promote the interaction and growth of the metastable carbon phase.

步驟D4:操作雙(金屬及微波)電漿炬Step D4: Operate the dual (metal and microwave) plasma torches

金屬及微波電漿炬之各種加工窗口參數被組態為獨立控制的,或在某些實施方式中相互結合來控制。在金屬及微波電漿炬(在本文中稱為「雙電漿炬」)中之一或多者操作之前、期間及之後,對整合式碳-金屬形成之加工窗口進行表徵。此外,選擇一或多個參數或參數組合,觀察碳-金屬之沉積,且使用任何本領域已知之技術,可關於各種區分因素對沉積態樣本進行表徵,該等區分因素包括(但不限於):形態(諸如使用掃描電子顯微鏡(SEM))、結構(諸如經由x射線繞射(XRD)及拉曼光譜)及/或物理及化學組成。 Various processing window parameters of the metal and microwave plasma torches are configured to be controlled independently or in combination with one another in certain embodiments. The processing window of the integrated carbon-metal formation is characterized before, during, and after operation of one or more of the metal and microwave plasma torches (referred to herein as "dual plasma torches"). In addition, one or more parameters or combinations of parameters are selected, the deposition of the carbon-metal is observed, and the as-deposited samples can be characterized with respect to various distinguishing factors, including (but not limited to): morphology (such as using scanning electron microscopy (SEM)), structure (such as by x-ray diffraction (XRD) and Raman spectroscopy), and/or physical and chemical composition using any technique known in the art.

圖6展示了可被調整以用於將石墨烯生長至小熔融顆粒上之脈衝微波電漿噴塗炬設備600。作為實例,脈衝微波電漿噴塗炬設備600(或其任何態樣)之一或多種變型可在本文描述之實施方式之架構及功能的上下文中實施。脈衝微波電漿噴塗炬設備600(或其任何態樣)可在任何環境中實施。 FIG6 shows a pulsed microwave plasma spray torch apparatus 600 that can be adapted for growing graphene onto small molten particles. As an example, one or more variations of the pulsed microwave plasma spray torch apparatus 600 (or any aspect thereof) can be implemented in the context of the architecture and functionality of the embodiments described herein. The pulsed microwave plasma spray torch apparatus 600 (or any aspect thereof) can be implemented in any environment.

在該種組態中,橫向電場(TE)微波能量功率構件可耦合至(或者,在一些實施方式中,亦實質上穿透)中央介電管,以將微波能量傳播至中央介電管中並貫穿該中央介電管。供應至中心區域中之氣體(在此實例中)可為吸收微波輻射之烴氣體,諸如甲烷。供應金屬粉末(由實質上惰性之載氣攜帶)以在脈衝微波電漿噴塗炬設備600之主體(或主室)內由電漿衍生及應用之熱能之組合來加熱。當暴露於此能量時,金屬粉末在達到熔化溫度時熔化,以產生黏性可流動液體材料或液滴(可能含有半固態材料),或任何其他可想像之分散體(很大程度上取決於伴隨之熔化條件)。 In this configuration, a transverse electric field (TE) microwave energy power element may be coupled to (or, in some embodiments, substantially penetrate) the central dielectric tube to propagate microwave energy into and through the central dielectric tube. The gas supplied to the central region (in this example) may be a hydrocarbon gas, such as methane, that absorbs microwave radiation. Metal powder is supplied (carried by a substantially inert carrier gas) to be heated by a combination of plasma derived and applied thermal energy within the main body (or main chamber) of the pulsed microwave plasma spray torch apparatus 600. When exposed to this energy, the metal powder melts when the melting temperature is reached to produce a viscous flowable liquid material or droplets (which may contain semi-solid materials), or any other conceivable dispersion (depending largely on the accompanying melting conditions).

當烴氣體分解成其組成元素物質時,碳自由基在熔化金屬液滴之暴露表面上成核。微波之能量調諧設置及熱羽流溫度設置之組合可允許脈衝微波電漿噴塗炬設備600之中心區域中熔化溫度與電漿分解/電離溫度之間的不同溫度。電漿噴塗炬設備之中心室或區域內之非平衡條件(指溫度、壓力等)可允許(或以其他方式促進)石墨烯/碳之內部晶格放置,而快速淬火產生了有利於covetic材料生長之條件。 As the hydrocarbon gas decomposes into its component elemental species, carbon radicals nucleate on the exposed surface of the molten metal droplet. The combination of microwave energy tuning settings and thermal plume temperature settings allows for a temperature differential between the melting temperature and the plasma decomposition/ionization temperature in the central region of the pulsed microwave plasma spray torch apparatus 600. Non-equilibrium conditions (referring to temperature, pressure, etc.) within the central chamber or region of the plasma spray torch apparatus allow (or otherwise promote) internal lattice placement of graphene/carbon, while rapid quenching produces conditions favorable for covetic material growth.

如本文所理解,內部晶格放置係指例如碳材料(諸如石墨烯)之合成晶格結構在輸入金屬之晶格結構內的定位,使得單獨之碳及金屬原子至少部分地對齊。例如,內部晶格放置包括一或多個石墨烯層(較佳為相干的平面層)(諸如單層石墨烯(SLG)或少層石墨烯(FLG))有間隙地並置於金屬晶格之基面之間及/或有間隙地交錯於金屬晶格之基面之間的情形。內部晶格放置亦包括其他碳基化合物(諸如三維石墨烯、碳奈米洋蔥(CNO)、石墨烯奈米帶、碳奈米管、石墨烯超晶格及一般熟習此項技術者將理解之其等效物)有間隙地並置於金屬晶格之基面之間及/或有間隙地交錯於金屬晶格之基面之間的實施例。同樣,不管碳基化合物之特定合成晶格結構如何,內部晶格放置之主要特性均為各個碳及金屬原子至少部分對齊。示出了其中碳之晶格及金屬之晶格被取向為使得碳原子及金屬原子至少部分對齊的內部晶格之圖在圖8A-B、圖12、圖26C及圖26D及以下對應之書面描述中呈現。 As understood herein, internal lattice placement refers to the positioning of the resultant lattice structure of, for example, a carbon material such as graphene within the lattice structure of an input metal such that individual carbon and metal atoms are at least partially aligned. For example, internal lattice placement includes situations where one or more graphene layers (preferably coherent planar layers) such as single layer graphene (SLG) or few layer graphene (FLG) are interstitially juxtaposed between basal planes of a metal lattice and/or interstitially interlaced between basal planes of a metal lattice. Internal lattice placement also includes embodiments where other carbon-based compounds (such as three-dimensional graphene, carbon nano-onion (CNO), graphene nanoribbons, carbon nanotubes, graphene superlattices, and their equivalents as will be understood by those skilled in the art) are interstitially juxtaposed between basal planes of a metal lattice and/or interstitially interlaced between basal planes of a metal lattice. Likewise, regardless of the specific synthetic lattice structure of the carbon-based compound, the primary characteristic of the internal lattice placement is that the individual carbon and metal atoms are at least partially aligned. Diagrams showing internal lattices in which the carbon lattice and the metal lattice are oriented such that the carbon atoms and the metal atoms are at least partially aligned are presented in Figures 8A-B, Figure 12, Figure 26C, and Figure 26D and the corresponding written descriptions below.

內部晶格放置因此係指碳及金屬原子在晶格中之空間佈置,且與化學及/或離子鍵合區分開,但根據各種實施方式,目前描述之創新物質組合物可另外包括多個特性,諸如該物質組合物內之各個碳原子之間的非極性共價鍵合,及/或該物質組合物內之各個碳原子與金屬原子之間的非極性共價鍵合。 Internal lattice placement thus refers to the spatial arrangement of carbon and metal atoms in the crystal lattice and is distinguished from chemical and/or ionic bonding, but according to various embodiments, the presently described inventive compositions of matter may additionally include properties such as nonpolar covalent bonding between individual carbon atoms within the composition of matter and/or nonpolar covalent bonding between individual carbon atoms and metal atoms within the composition of matter.

較佳地,表現出內部晶格放置之組合物的特徵在於在各個碳原子之間實質上缺少極性共價鍵合,以及在碳原子與金屬原子之間實質上缺少極性共 價鍵合。更佳地,本文描述之發明構思的特徵在於金屬晶格內實質上缺少離子鍵合。 Preferably, the composition exhibiting an internal lattice arrangement is characterized by a substantial lack of polar covalent bonding between individual carbon atoms and a substantial lack of polar covalent bonding between carbon atoms and metal atoms. More preferably, the inventive concepts described herein are characterized by a substantial lack of ionic bonding within the metal lattice.

如一般熟習此項技術者將瞭解的,極性共價鍵、非極性共價鍵、離子鍵及金屬鍵各自具有獨特之區分特性,及對應之電子性質及化學性質。 As those skilled in the art will appreciate, polar covalent bonds, nonpolar covalent bonds, ionic bonds, and metallic bonds each have unique distinguishing characteristics and corresponding electronic and chemical properties.

在鍵合電子自一個原子完全轉移至另一個原子之後,得到離子鍵。所得的帶正電荷及帶負電荷之離子隨後被靜電吸引。重要的係,離子鍵很少具有任何特定方向性,因為離子鍵係由每一離子被靜電吸引至周圍所有帶相反電荷之離子而產生。離子化合物大體上具有高熔化溫度、高沸騰溫度且易碎(低機械強度),且在熔融狀態或處於水溶液中時可導電。 After the complete transfer of bonding electrons from one atom to another, an ionic bond results. The resulting positively and negatively charged ions are then electrostatically attracted. Importantly, ionic bonds rarely have any particular directionality, since they result from the electrostatic attraction of each ion to all surrounding ions of the opposite charge. Ionic compounds generally have high melting temperatures, high boiling temperatures, are brittle (low mechanical strength), and can conduct electricity in the molten state or in aqueous solution.

在金屬鍵合中,鍵合電子非定域在原子之晶格上。在金屬中,每一原子提供駐留於許多原子中心之間的一或多個電子。非定域(或「自由」)電子之自由移動因此導致金屬之重要性質,諸如高導電性及導熱性。顯著地,具有分散於金屬晶格中之碳及在晶格之碳原子與金屬原子之間具有實質共價鍵合的本文描述之創新物質組合物的特徵可能在於在此類共價鍵合中涉及了所有或實質上所有(例如,至少90%、至少95%、至少98%、至少99%等)電子,從而更改該組合物之導電性及/或導熱性。 In metallic bonding, the bonding electrons are delocalized on the lattice of atoms. In metals, each atom donates one or more electrons that reside between many atomic centers. The free movement of delocalized (or "free") electrons is therefore responsible for important properties of metals, such as high electrical and thermal conductivity. Notably, the innovative compositions of matter described herein having carbon dispersed in a metal lattice and having substantial covalent bonding between carbon atoms of the lattice and metal atoms may be characterized in that all or substantially all (e.g., at least 90%, at least 95%, at least 98%, at least 99%, etc.) of the electrons are involved in such covalent bonding, thereby altering the electrical and/or thermal conductivity of the composition.

雖然極性及非極性共價鍵合均涉及電子共用,但包括極性共價鍵之化合物的特徵在於電子在鍵合夥伴之間的非均等共用。例如,在氯化氫中,氯原子具有比氫高之電負性,且表現出對電子之較強吸引力。因此,「共用」電子與氯原子之關聯性更強,從而導致氯上之部分負電荷及氫上之部分正電荷(因此在HCl分子中產生偶極子)。在水中,每一氫原子與氧原子之間的鍵歸因於氧之較大電負性而被類似地表徵。如此導致每一氫原子與氧原子之間的偶極矩,且由於其彎曲形狀,在整個水分子上導致整個偶極子。然而,並非所有表現出非極性共價鍵合之化合物均表現出整個偶極子。四氯甲烷具有鍵合至中心碳且 彼此等距間隔開之四個氯原子。雖然每一碳-氯共價鍵係非極性的,但分子之空間佈置消除了總體键矩,從而得到具有零淨極性之分子。類似地,二氧化碳之直線形狀消除了在每一氧原子與中心碳之間表現出的偶極矩,從而得到不具有淨偶極矩之分子結構。 Although both polar and nonpolar covalent bonding involve the sharing of electrons, compounds that include polar covalent bonds are characterized by the unequal sharing of electrons between the bonding partners. For example, in hydrogen chloride, the chlorine atom has a higher electronegativity than hydrogen, and exhibits a stronger attraction for the electron. Therefore, the "shared" electron is more strongly associated with the chlorine atom, resulting in a partial negative charge on the chlorine and a partial positive charge on the hydrogen (thus creating a dipole in the HCl molecule). In water, the bond between each hydrogen atom and an oxygen atom is similarly characterized due to the greater electronegativity of the oxygen. This results in a dipole moment between each hydrogen atom and the oxygen atom, and due to its curved shape, a total dipole throughout the water molecule. However, not all compounds that exhibit nonpolar covalent bonding exhibit an overall dipole. Tetrachloromethane has four chlorine atoms bonded to a central carbon and equidistantly spaced from each other. Although each carbon-chlorine covalent bond is nonpolar, the spatial arrangement of the molecule cancels out the overall bond moment, resulting in a molecule with zero net polarity. Similarly, the rectilinear shape of carbon dioxide cancels out the dipole moment exhibited between each oxygen atom and the central carbon, resulting in a molecular structure with no net dipole moment.

不管怎樣,在電場存在之情況下,極性共價鍵合中涉及之原子及/或電子雲可偏移,從而引起與電場對齊之極化。該現象可給出對應之化合物能量儲存能力,且對該物質組合物之電容有貢獻。表現出極性共價鍵合之化合物尤其係具有極性共價鍵之大部分(例如,在各種實施例中,至少10%、至少20%、至少25%、至少50%等)之小分子或分子的特徵在於熔化溫度及沸騰溫度低於表現出離子鍵合之化合物(同樣,尤其係表現出離子鍵之大部分的小化合物及化合物),但高於表現出非極性共價鍵合之化合物(同樣,尤其係表現出非極性共價鍵之大部分的小化合物及化合物)。表現出極性共價鍵合之化合物可能會或可能不會表現出導電性,但通常小於離子化合物。另外,表現出極性共價鍵合之化合物(同樣,尤其係表現出極性共價鍵之大部分的小化合物及化合物)在水中適度可溶(溶解度取決於化合物之整體極性),但在非極性溶劑中通常不可溶或僅標稱可溶。 In any case, in the presence of an electric field, the atoms and/or electron clouds involved in the polar covalent bonds can be deflected, thereby causing a polarization that is aligned with the electric field. This phenomenon can give the corresponding compound an energy storage capacity and contribute to the capacitance of the material composition. Compounds that exhibit polar covalent bonding are particularly small molecules or molecules that have a majority of polar covalent bonding (e.g., in various embodiments, at least 10%, at least 20%, at least 25%, at least 50%, etc.) characterized by melting and boiling temperatures lower than compounds that exhibit ionic bonding (again, particularly small compounds and compounds that exhibit a majority of ionic bonding), but higher than compounds that exhibit non-polar covalent bonding (again, particularly small compounds and compounds that exhibit a majority of non-polar covalent bonding). Compounds that exhibit polar covalent bonding may or may not exhibit electrical conductivity, but are generally less than ionic compounds. Additionally, compounds that exhibit polar covalent bonding (again, especially small compounds and compounds that exhibit a large fraction of polar covalent bonding) are moderately soluble in water (solubility depends on the overall polarity of the compound), but are generally insoluble or only nominally soluble in nonpolar solvents.

相反地,非極性共價鍵合之特徵在於電子在鍵合夥伴之間均等共用,且因此在其間缺少任何偶極矩。在組成原子之間僅僅(或實質上僅僅)表現出非極性共價鍵合的化合物因此缺少整個偶極矩,且缺少如上文描述的與之相關聯的對應特性及一般熟習此項技術者在閱讀了本揭示案之後將理解的其他特性。僅僅(或實質上僅僅)表現出非極性共價鍵合之例示性、非限制性化合物包括如本文描述之石墨、單層石墨烯(SLG)、少層石墨烯(FLG)、三維石墨烯、碳奈米洋蔥(CNO)、石墨烯奈米帶、碳奈米管(CNT)(單壁(SWCNT)與多壁(MWCNT))、石墨烯超晶格等以及一般熟習此項技術者在閱讀了本說明書之後將 理解的其等效物。 In contrast, nonpolar covalent bonding is characterized by the equal sharing of electrons between the bonding partners and, therefore, the lack of any dipole moment therebetween. Compounds that exhibit only (or substantially only) nonpolar covalent bonding between the constituent atoms therefore lack an overall dipole moment and the corresponding properties associated therewith as described above and other properties that will be understood by one of ordinary skill in the art after reading this disclosure. Exemplary, non-limiting compounds that exhibit only (or substantially only) non-polar covalent bonding include graphite, single-layer graphene (SLG), few-layer graphene (FLG), three-dimensional graphene, carbon nano-onion (CNO), graphene nanoribbons, carbon nanotubes (CNT) (single-walled (SWCNT) and multi-walled (MWCNT)), graphene superlattices, etc. as described herein, and their equivalents that will be understood by those skilled in the art after reading this specification.

例如,表現出非極性共價鍵合之化合物(尤其係諸如二氧化碳、分子氫、甲烷等之小分子)及實質上不包括極性共價鍵及離子鍵之化合物的特徵大體上在於低沸騰溫度及熔化溫度及低導電性。在表現出非極性共價鍵合之大多數化合物中,倫敦分散力控制化合物之電子特性。然而,儘管基本上由非極性共價鍵組成,但石墨烯(及歸因於分子結構之物理佈置及鍵合模式而在電子之間表現出sp2及/或sp3鍵合及/或實質協調的類似化合物,如熟習此項技術者在閱讀了本揭示案之後將知道的)表現出顯著導電性。類似地,表現出非極性共價鍵合之化合物通常不可溶於水中或僅標稱地溶於水中(但其可溶於非極性溶劑中)。 For example, compounds that exhibit nonpolar covalent bonding (particularly small molecules such as carbon dioxide, molecular hydrogen, methane, etc.) and compounds that do not substantially include polar covalent and ionic bonds are generally characterized by low boiling and melting temperatures and low electrical conductivity. In most compounds that exhibit nonpolar covalent bonding, London dispersion forces control the electronic properties of the compound. However, despite being composed essentially of nonpolar covalent bonds, graphene (and similar compounds that exhibit sp2 and/or sp3 bonding and/or substantial coordination between electrons due to the physical arrangement and bonding pattern of the molecular structure, as will be known to those skilled in the art after reading this disclosure) exhibits significant electrical conductivity. Similarly, compounds that exhibit nonpolar covalent bonding are generally insoluble or only nominally soluble in water (but may be soluble in nonpolar solvents).

現在參看圖6,圖6之單個整合式微波電漿炬可如下表2所描繪那般設置及操作,其細節在下文中描述。 Referring now to FIG. 6 , the single integrated microwave plasma torch of FIG. 6 may be configured and operated as described in Table 2 below, the details of which are described below.

Figure 112134605-A0305-12-0036-2
Figure 112134605-A0305-12-0036-2

步驟S1:部署單個整合式微波電漿炬Step S1: Deployment of a single integrated microwave plasma torch

圖6描繪了單個整合式微波電漿炬。該炬具有使用(例如)小惰性氣體或用於控制氣體流之差泵真空加工固體、液體及蒸氣反應物原料物質之能力。該炬可部署在任何環境(指實驗室、研究機構或大規模工業企業等)中。 FIG6 depicts a single integrated microwave plasma torch. The torch has the capability to process solid, liquid, and vapor reactant feedstock materials using, for example, a small inert gas or a differentially pumped vacuum for controlling gas flow. The torch can be deployed in any environment, be it a laboratory, research institution, or large-scale industrial enterprise.

步驟S2:操作單個整合式微波電漿炬以形成石墨烯負載金屬複合( covetic )合金 Step S2: Operating a single integrated microwave plasma torch to form a graphene-loaded metal composite ( covetic ) alloy

微波能量以共線波導組態與用於有效微波能量吸收之集中式氣體饋送系統一起遞送。微波能量源用於將金屬加熱至半熔融狀態。當CH4(或其他烴源)在被引導至表面波電漿氣體離解管中之排氣羽流內分解(為其組成物質)時, 碳自由基可經由被電漿自由基(被引導至金屬液滴上)激發而在金屬液滴表面上成核(諸如以有組織之逐層方式)。微波熱羽流溫度及電漿之能量調諧允許獨立控制發生在脈衝微波電漿噴塗炬設備600之中心區域內的熔體與電漿分解/電離之間的溫度。 Microwave energy is delivered in a co-linear waveguide configuration along with a centralized gas feed system for efficient microwave energy absorption. The microwave energy source is used to heat the metal to a semi-molten state. As CH4 (or other hydrocarbon source) decomposes (to its component species) within the exhaust plume directed into the surface wave plasma gas decomposition tube, carbon radicals can nucleate on the metal droplet surface (e.g., in an organized layer-by-layer manner) via excitation by plasma radicals (directed onto the metal droplets). Tuning of the microwave heat plume temperature and the energy of the plasma allows independent control of the temperature between the melt and the plasma decomposition/ionization occurring within the central region of the pulsed microwave plasma spray torch apparatus 600.

量測且最佳化製程條件。所要之製程條件藉由整合式微波電漿炬控制或針對整合式微波電漿矩進行控制,以在單級或多級電漿反應炬內直接形成石墨烯負載金屬複合材料。電漿炬可在表面波電漿之不同區域內進行調變,以提高共振(調變)次數,且最佳化目標金屬-碳結構之形成。 Measure and optimize process conditions. The desired process conditions are controlled by or for the integrated microwave plasma torch to form graphene-loaded metal composites directly in a single-stage or multi-stage plasma reaction torch. The plasma torch can be modulated in different regions of the surface wave plasma to increase the number of resonances (modulations) and optimize the formation of the target metal-carbon structure.

除了在所描繪位置處之所示製程氣體端口(諸如用於引入烴製程氣體605)之外,亦可在不同位置處設有額外端口604。此類額外端口可用來控制如何將製程氣體引入微波場中,且引入其他製程氣體。作為實例,製程氣體可為SiH4或NH3。在一些實施方式中,可包括多於一個氣體輸入端口或多於一個顆粒輸入端口(諸如一個碳輸入端口及一個金屬輸入端口),其中輸入端口之位置可定位在電漿炬之不同區域中。 In addition to the process gas ports shown at the depicted locations (e.g., for introducing hydrocarbon process gas 605), additional ports 604 may be provided at different locations. Such additional ports may be used to control how process gases are introduced into the microwave field, and to introduce other process gases. As examples, the process gas may be SiH4 or NH3 . In some embodiments, more than one gas input port or more than one particle input port (e.g., one carbon input port and one metal input port) may be included, wherein the locations of the input ports may be positioned in different areas of the plasma torch.

上述設置及條件以及其他條件被最佳化以在基板表面處產生使撞擊顆粒能夠固結為膜之條件。根據下面步驟S3中概述之方法對沉積態膜進行分析及表徵。 The above settings and conditions, as well as other conditions, are optimized to produce conditions at the substrate surface that enable the impacting particles to consolidate into a film. The as-deposited film is analyzed and characterized according to the method outlined in step S3 below.

步驟S3:驗證/表徵石墨烯(二次相)金屬性質Step S3: Verify/characterize the metallic properties of graphene (secondary phase)

沉積態整合式碳-金屬複合結構之表徵使用若干技術來完成。例如,x射線光電子能譜(XPS)及/或SEM-EDS可用來確定化學組成、結合能(奈米級碳偵測)及分佈。此外,能量色散x射線光譜(EDS)及/或SEM及/或拉曼光譜及/或XRD可用來確定形態及/或量測晶粒大小及結構態樣。複合材料之電學及熱學性質以及拉伸強度及模量可使用任何已知之技術進行評估。 Characterization of deposited integrated carbon-metal composite structures is accomplished using several techniques. For example, x-ray photoelectron spectroscopy (XPS) and/or SEM-EDS can be used to determine chemical composition, binding energy (nanoscale carbon detection) and distribution. In addition, energy dispersive x-ray spectroscopy (EDS) and/or SEM and/or Raman spectroscopy and/or XRD can be used to determine morphology and/or measure grain size and structural characteristics. Electrical and thermal properties of the composites as well as tensile strength and modulus can be evaluated using any known technique.

結果result

上述技術使用微波電漿炬連續製作金屬基體複合材料。加工涉及材料成核及在電漿中形成生長區域,然後係用於將材料固結至基板上之加速及碰撞區域。每個區域提供對不同材料合成/調配及整合之獨特控制;亦即,電漿內合金顆粒之選擇性及獨特調配,然後,經由控制在碰撞於基板上期間之動量(主要為動力學)及熱能量,實現用於控制固結參數(諸如孔隙率、缺陷密度、殘餘應力、化學梯度及熱梯度、相變及各向異性)之獨特添加劑製程。 The above technology uses a microwave plasma torch to continuously produce metal matrix composites. The process involves material nucleation and formation of growth zones in the plasma, followed by acceleration and collision zones for consolidation of the material onto the substrate. Each zone provides unique control over the synthesis/blending and integration of different materials; that is, the selectivity and unique formulation of alloy particles in the plasma, followed by unique additive processes for controlling consolidation parameters such as porosity, defect density, residual stress, chemical and thermal gradients, phase changes and anisotropy by controlling the momentum (primarily kinetics) and thermal energy during collision on the substrate.

各種材料被選擇用於在電漿操作環境內跨廣泛生長動態使用。具體地,可經由脈衝能量電漿炬加工系統加工具有特定碳氧氫比率之烴氣體源及具有不同碳溶解度、熔點及晶體結構之固體金屬(或金屬合金)顆粒源。如此,可針對顆粒之伴隨初始表面熔化連同金屬表面處2D石墨烯及重新濺射之金屬的成核/或生長及併入來識別具體電漿加工參數。 Various materials are selected for use across a wide range of growth dynamics within a plasma operating environment. Specifically, hydrocarbon gas sources having specific carbon-oxygen-hydrogen ratios and solid metal (or metal alloy) particle sources having different carbon solubilities, melting points, and crystal structures can be processed via a pulsed energy plasma torch processing system. In this way, specific plasma processing parameters can be identified for the concomitant initial surface melting of the particles along with the nucleation/or growth and incorporation of 2D graphene and resputtered metal at the metal surface.

在自微波電漿炬中將石墨烯併入至金屬中後,對沉積態材料/膜關於「covetic樣」性質進行表徵。作為實例,此等covetic樣性質可表徵為(例如):(1)化學組成(諸如用於偵測雜質及用於偵測碳形式);(2)碳分佈(諸如間隙—指金屬基體或晶格內之碳原子或物質之位置,晶內及晶間);(3)導電性;及(4)材料之機械強度。表徵可包括石墨烯負載與未合金化母體金屬之間的比較。此外,僅作為實例,使用微波電漿炬,沉積態材料可表現出在約3%至90%範圍內(包含端值)之碳與金屬比率。在一些情況下,碳與金屬之比率在約10%至約40%之範圍內(包含端值)。在一些情況下,碳與金屬之比率在約40%至約80%之範圍內(包含端值)。在一些情況下,碳與金屬之比率在約80%至約90%之範圍內(包含端值)。在一些情況下,碳與金屬之比率大於90%(包含端值)。碳與金屬之比率可受定義塗層製程之參數或規格(諸如溫度、厚度、均質性等)之影響(或進一步影響)。 After incorporation of graphene into metal from a microwave plasma torch, the as-deposited material/film is characterized with respect to "covetic-like" properties. As an example, these covetic-like properties can be characterized, for example: (1) chemical composition (e.g., for detecting impurities and for detecting carbon form); (2) carbon distribution (e.g., interstitial - referring to the location of carbon atoms or species within the metal matrix or lattice, both intracrystalline and intercrystalline); (3) conductivity; and (4) mechanical strength of the material. Characterization can include a comparison between graphene loading and the unalloyed parent metal. In addition, by way of example only, using a microwave plasma torch, the as-deposited material can exhibit a carbon to metal ratio in the range of about 3% to 90%, inclusive. In some cases, the carbon to metal ratio is in the range of about 10% to about 40%, inclusive. In some cases, the carbon to metal ratio is in the range of about 40% to about 80%, inclusive. In some cases, the carbon to metal ratio is in the range of about 80% to about 90%, inclusive. In some cases, the carbon to metal ratio is greater than 90%, inclusive. The carbon to metal ratio may be affected (or further affected) by parameters or specifications that define the coating process (e.g., temperature, thickness, homogeneity, etc.).

因此,碳可以使用習知技術無法達成之量存在,例如,根據各種實 施例,所得材料可包含大於約6wt%碳、大於約15wt%碳、大於約40wt%碳、大於約60wt%碳或直至約90wt%碳。在各種實施例中,碳可以前述量包含在金屬晶格中,使得所有或實質上所有的碳併入至金屬(或其他材料)晶格中,且晶界/晶格表面實質上或完全沒有碳聚集體及/或團聚物。此外,碳較佳地存在/位於晶格之間隙位點處。 Thus, carbon may be present in amounts that are not achievable using conventional techniques, for example, according to various embodiments, the resulting material may contain greater than about 6 wt% carbon, greater than about 15 wt% carbon, greater than about 40 wt% carbon, greater than about 60 wt% carbon, or up to about 90 wt% carbon. In various embodiments, carbon may be included in the metal lattice in the aforementioned amounts such that all or substantially all of the carbon is incorporated into the metal (or other material) lattice and the grain boundaries/lattice surfaces are substantially or completely free of carbon aggregates and/or agglomerates. In addition, carbon is preferably present/located at interstitial sites of the lattice.

圖7為描繪了塗層製程之圖700。該圖涉及金屬基板,該基板經受covetic材料之電漿炬噴塗,其繼而產生合成之複合碳塗層。金屬基板可包括鋁、銅、鐵、鎳、鈦、鉭、鎢、鉻、鉬、鈷、錳、鈮及其合金(例如,如上文描述之各種英高鎳合金)或其他本體金屬材料中之任何一或多種。covetic材料可包含碳、石墨烯、奈米洋蔥、碳奈米管(CNT)、碳化物植入材料等中之一或多種。 FIG. 7 is a diagram 700 depicting a coating process. The diagram relates to a metal substrate that is subjected to plasma torch spraying of a covetic material, which in turn produces a resultant composite carbon coating. The metal substrate may include any one or more of aluminum, copper, iron, nickel, titanium, tungsten, chromium, molybdenum, cobalt, manganese, niobium, and alloys thereof (e.g., various inconel nickel alloys as described above) or other bulk metal materials. The covetic material may include one or more of carbon, graphene, nano-onions, carbon nanotubes (CNTs), carbide implant materials, etc.

電漿炬噴塗用於用經過沉積之材料塗覆輸入材料,且可使用脈衝能量操作。如所示出,經過沉積之(諸如藉由逐層濺射)材料可為碳、金屬(諸如上文列出的)及/或氧化物或氮化物中之任何一或多種。 Plasma torch coating is used to coat input material with deposited material and may be operated using pulsed energy. As shown, the material deposited (such as by layer-by-layer sputtering) may be any one or more of carbon, metal (such as listed above), and/or oxides or nitrides.

使用上述炬會出現若干優點。該等優點中最主要的係製程之可擴展性及多功能性優點,以調配呈各種組態/架構的獨特之穩定金屬-碳複合材料。此等組態/架構之範圍為自完全緻密之薄膜塗層至隨後重熔及鑄造/成形為經工程化之金屬合金組件的厚條帶或顆粒。當與現有母體金屬合金調配物相比時,上述範圍中之此等物質中之每種物質均表現出出人意料的良好(及所要)的增強之機械、熱學及電學性質。另外,共價鍵合之2D石墨烯在金屬合金基體中之濃度及分佈的可調諧性高於熱力學溶解臨限值以及非平衡電漿環境中之逐層形成實現了新的一類複合材料,該類複合材料可被工程化以對應於特定應用及/或對應於特定性質要求。此外,與其他技術相比,此可以大幅降低之成本完成。 Several advantages arise from the use of the above-described torches. Chief among these advantages is the scalability and versatility of the process to formulate unique stable metal-carbon composites in a variety of configurations/architectures. These configurations/architectures range from fully dense thin film coatings to thick strips or pellets that are subsequently remelted and cast/formed into engineered metal alloy components. Each of these materials within the above range exhibits unexpectedly good (and desirable) enhanced mechanical, thermal, and electrical properties when compared to existing parent metal alloy formulations. In addition, the tunability of the concentration and distribution of covalently bonded 2D graphene in a metal alloy matrix above the thermodynamic solubility threshold and the layer-by-layer formation in a non-equilibrium plasma environment enable a new class of composite materials that can be engineered to correspond to specific applications and/or to correspond to specific property requirements. Furthermore, this can be accomplished at significantly reduced costs compared to other techniques.

增強之機械、熱學及電學性質可應用於大量使用銅及鋁合金之應用。作為實例,此類應用包括(但不限於):電線導體及高壓電力傳輸電纜、微電 子熱管理及熱交換器以及許多使用薄膜電導體之應用,諸如電池、燃料電池及光伏。具體地,微波電漿炬製程與實現碳-金屬合金生產之組合在製造過程中顯著節省了能源以及提高了熱效率,且減少了最終應用效能中之電損耗。 The enhanced mechanical, thermal and electrical properties can be applied to applications that use a large number of copper and aluminum alloys. As examples, such applications include (but are not limited to): wire conductors and high voltage power transmission cables, microelectronics thermal management and heat exchangers, and many applications using thin film conductors such as batteries, fuel cells and photovoltaics. Specifically, the combination of microwave plasma torch processing and the realization of carbon-metal alloy production provides significant energy savings and improved thermal efficiency in the manufacturing process, and reduces electrical losses in the final application performance.

前述電漿噴塗技術僅描繪了用於製造covetic材料之方法的一種類型。另一種類型涉及將碳顆粒噴塗至小熔融金屬顆粒上。關於圖8A-B、圖9、圖10、圖11、圖12、圖13及圖14以及本文圖式中之討論示出並討論了此類型及該類型之各個方面。 The aforementioned plasma spraying technique describes only one type of method for making covetic materials. Another type involves spraying carbon particles onto small molten metal particles. This type and aspects of this type are shown and discussed with respect to Figures 8A-B, 9, 10, 11, 12, 13, and 14 and the discussion in the figures herein.

圖8A-B為描繪了用於將碳顆粒噴塗至小熔融顆粒上之電漿噴塗製程800的示意圖。作為選項,電漿噴塗製程800(或其任何態樣)之一或多種變型可在本文描述之實施方式之架構及功能的上下文中實施。電漿噴塗製程800或其任何態樣可在任何環境中實施。 8A-B are schematic diagrams depicting a plasma spraying process 800 for spraying carbon particles onto small molten particles. As an option, one or more variations of the plasma spraying process 800 (or any aspect thereof) may be implemented in the context of the architecture and functionality of the embodiments described herein. The plasma spraying process 800 or any aspect thereof may be implemented in any environment.

所示之電漿噴塗技術用於各種塗層製程中,其中受熱材料被噴塗至表面上。藉由電氣手段(諸如電漿或電弧)及/或化學手段(諸如經由燃燒火焰)加熱原料(諸如塗層前體)。根據製程及原料,使用此類電漿噴塗技術可提供厚度在約20μm至約3mm之範圍內的塗層。塗層可以高沉積速率施加於大面積上。使用上述技術,沉積速率遠遠高於藉由習知塗層製程諸如電鍍或物理及化學氣相沉積可實現之沉積速率。 Plasma spraying techniques as shown are used in various coating processes in which heated materials are sprayed onto a surface. Raw materials (such as coating precursors) are heated by electrical means (such as plasma or electric arc) and/or chemical means (such as via a combustion flame). Depending on the process and raw materials, coatings with thicknesses ranging from about 20 μm to about 3 mm can be provided using such plasma spraying techniques. Coatings can be applied over large areas at high deposition rates. Using the above techniques, deposition rates are much higher than those achievable by known coating processes such as electroplating or physical and chemical vapor deposition.

除了上述例示性材料之外(或替代上述例示性材料),可用於電漿噴塗之塗層材料之類型包括金屬、合金、陶瓷、塑膠及複合材料。該等塗層材料以粉末形式或金屬絲形式被饋入於噴塗炬中,然後被加熱至熔融或半熔融狀態,且以微米大小之顆粒形式朝基板加速。燃燒或電弧放電可用作電漿噴塗之能量來源。所得塗層係由許多層噴塗顆粒之累積而成。在許多應用中,基板之表面不會明顯升溫,因此有利於許多物質(包含大多數易燃物質)之塗覆。 In addition to (or in place of) the above exemplary materials, types of coating materials that can be used for plasma spraying include metals, alloys, ceramics, plastics, and composites. The coating materials are fed into the spraying torch in powder form or wire form, and then heated to a molten or semi-molten state and accelerated toward the substrate in the form of micron-sized particles. Combustion or arc discharge can be used as the energy source for plasma spraying. The resulting coating is formed by the accumulation of many layers of sprayed particles. In many applications, the surface of the substrate does not heat up significantly, which is conducive to the coating of many substances (including most flammable substances).

圖9為示出了將碳顆粒(諸如粒徑為20nm至40μm)噴塗至小熔融金 屬顆粒上之效果的掃描電子顯微鏡影像900。噴塗至小熔融金屬顆粒上之碳顆粒可用于各種特殊應用。例如,電漿鋁-石墨複合材料可被專門設計用來為渦輪發動機提供塗層。替代方案包括使用鋁及鈦合金。該電漿噴塗塗層材料之生長速率為抛物線型的。電漿噴塗塗層材料在短時間段內沉澱,該沉澱在很大程度上與溫度無關。為了準備材料表面,某些製程包括對材料進行預熱。在一些實施方式中,為了準備金屬表面,亦使用砂礫進行噴砂。在一些實施方式中,噴塗至表面上之顆粒之某些部分仍然熱到足以在基板表面處形成covetic鍵。在其他情況下,小熔融顆粒處於形成金屬-金屬鍵之溫度下。 FIG. 9 is a scanning electron microscope image 900 showing the effect of spraying carbon particles (e.g., particle size 20 nm to 40 μm) onto small molten metal particles. Carbon particles sprayed onto small molten metal particles can be used for a variety of special applications. For example, plasma aluminum-graphite composites can be specifically designed to provide coatings for turbo engines. Alternatives include the use of aluminum and titanium alloys. The growth rate of the plasma spray coating material is parabolic. The plasma spray coating material is deposited in a short period of time, and the deposition is largely independent of temperature. Some processes include preheating the material in order to prepare the surface of the material. In some embodiments, sandblasting is also performed with grit to prepare the metal surface. In some embodiments, some portion of the particles sprayed onto the surface are still hot enough to form a covetic bond at the substrate surface. In other cases, the small molten particles are at a temperature to form a metal-metal bond.

與使用習知炬相比,使用本文揭示之微波電漿炬技術能夠產生改良之材料。具體地,習知電漿炬固有之功率控制限制及其他組態約束限制了習知電漿炬獨立控制輸入材料及產生碳所需之其他條件的能力,該等條件在產生表現出足夠高質量及均質性之covetic材料方面係有效的。 The use of the microwave plasma torch technology disclosed herein is capable of producing improved materials compared to the use of conventional torches. Specifically, power control limitations and other configurational constraints inherent in conventional plasma torches limit the ability of conventional plasma torches to independently control input materials and other conditions required to produce carbon that are effective in producing covetic materials that exhibit sufficiently high quality and homogeneity.

圖10示出了描繪石墨烯生長溫度曲線表1000之圖及二元相圖。作為選項,石墨烯生長溫度曲線表1000或其任何態樣之一或多種變型可在本文描述之實施方式之架構及功能的上下文中實施。石墨烯生長溫度曲線表1000或其任何態樣可在任何環境中實施。該圖亦示出了二元相圖,其中x軸為以原子百分比表示的所選金屬(如所示出,諸如銅)中之碳濃度。該圖中之溫度曲線圖中的溫度亦示出於相圖中。可使用各種金屬(諸如銀、錫等)。在一些情況中,形成了合金。 FIG. 10 shows a graph depicting a graphene growth temperature curve table 1000 and a binary phase diagram. As an option, the graphene growth temperature curve table 1000 or one or more variations thereof may be implemented in the context of the architecture and functionality of the embodiments described herein. The graphene growth temperature curve table 1000 or any of its aspects may be implemented in any environment. The figure also shows a binary phase diagram, where the x-axis is the carbon concentration in a selected metal (such as copper as shown) expressed as atomic percent. The temperatures in the temperature curve diagram in the figure are also shown in the phase diagram. Various metals (such as silver, tin, etc.) can be used. In some cases, alloys are formed.

單層石墨烯(SLG)或少層石墨烯(FLG)在熔融金屬上之生長背後的一般想法為在一定溫度下將碳原子溶解在過渡金屬熔體內,然後允許溶解之碳在較低溫度下沉澱出來(指自溶液中產生固體)。 The general idea behind the growth of single-layer graphene (SLG) or few-layer graphene (FLG) on molten metal is to dissolve carbon atoms in a transition metal melt at a certain temperature and then allow the dissolved carbon to precipitate out at a lower temperature (i.e., produce a solid from the solution).

示意圖描繪了藉由(例如)以下步驟自熔融鎳生長石墨烯:(1)在與石墨(作為碳源)接觸的同時使鎳熔化;(2)在高溫下將碳溶解在熔體內;及(3)降低 溫度以生長石墨烯。 Schematic diagram depicting the growth of graphene from molten nickel by, for example, the following steps: (1) melting the nickel while in contact with graphite (as a carbon source); (2) dissolving carbon in the melt at high temperature; and (3) lowering the temperature to grow graphene.

如所描繪,基於金屬-碳二元相變,在給定之溫度下保持熔體與碳源接觸將引起熔體中碳原子溶解及飽和。在降低溫度後,碳在熔融金屬中之溶解度將降低,且過量之碳將在熔體頂部上沉澱。 As depicted, keeping the melt in contact with a carbon source at a given temperature will cause the carbon atoms in the melt to dissolve and saturate, based on the metal-carbon binary phase transition. Upon lowering the temperature, the solubility of carbon in the molten metal will decrease, and excess carbon will precipitate on top of the melt.

圖11為(習知)電漿火焰設備1100之橫截面視圖。呈現該圖係為了將舊有電漿火焰設備之用途與本文揭示之微波電漿炬之用途區分開。具體地,儘管使用舊有電漿火焰設備可在金屬表面上產生金剛石或類金剛石材料,但該製程需要大量之時間用於碳之材料溶解及擴散,使得最終材料沉澱至金屬表面上。在使用目前揭示之實施方式產生本文所揭示之金屬-碳複合材料期間,所要石墨烯在金屬或含金屬複合材料層之間(或晶格或基體位點內)間隙生長及鎖定。然而,為此,必須以高速率調節溫度。遺憾的係,舊有電漿炬對於將間隙碳結構大小減小至奈米級(諸如對於實現本文所要之covetic材料可能係所要的)所需之溫度及其他條件不能提供足夠控制。 FIG. 11 is a cross-sectional view of a (known) plasma flame apparatus 1100. This figure is presented to distinguish the use of conventional plasma flame apparatus from the use of the microwave plasma torch disclosed herein. Specifically, although diamond or diamond-like materials can be produced on metal surfaces using conventional plasma flame apparatus, the process requires a significant amount of time for the carbon material to dissolve and diffuse so that the final material is deposited on the metal surface. During the production of the metal-carbon composite material disclosed herein using the presently disclosed embodiments, the desired graphene grows and is locked in the interstices between metal or metal-containing composite layers (or within lattice or matrix sites). However, to do this, the temperature must be adjusted at a high rate. Unfortunately, existing plasma torches do not provide adequate control over temperature and other conditions necessary to reduce the size of interstitial carbon structures to the nanoscale, such as may be desired to achieve the covetic materials sought herein.

相比之下,脈衝微波反應器(與之前介紹的目前揭示之實施方式相關)及對應製程示出並描述於圖12中,以提供對將間隙碳結構大小減小至奈米級所需之溫度及其他條件的足夠詳細之控制。 In contrast, a pulsed microwave reactor (associated with the presently disclosed embodiments described previously) and corresponding process shown and described in FIG. 12 provide sufficiently detailed control over temperature and other conditions required to reduce the size of interstitial carbon structures to the nanoscale.

圖12描繪了當「生長」石墨烯(指石墨烯逐層系統沉積或施加於熔融金屬顆粒的基本上平坦之暴露表面上)時使用之脈衝微波製程流程1200。作為選項,脈衝微波流程1200或其任何態樣之一或多個變型可在本文描述之實施方式之架構及功能的上下文中實施。脈衝微波製程流程1200或其任何態樣可在任何環境中實施。 FIG. 12 depicts a pulsed microwave process flow 1200 used when “growing” graphene (referring to the systematic deposition or application of graphene layer by layer onto a substantially flat exposed surface of a molten metal particle). Optionally, the pulsed microwave process flow 1200 or one or more variations of any aspect thereof may be implemented in the context of the architecture and functionality of the embodiments described herein. The pulsed microwave process flow 1200 or any aspect thereof may be implemented in any environment.

當使用所示之脈衝微波製程流程1200時,石墨烯生長至小熔融顆粒上。此係藉由在脈衝微波反應器內在入口1204(諸如在此處金屬粉末及載氣被引進到反應器室中)周圍發生之相互作用來完成。除了入口1204之外,亦在反應器 設備一側之不同高度處設有製程氣體端口1202及額外端口(諸如額外端口12031及額外端口12032)。波導至少橫穿自反應器一側之製程氣體端口1202之位置至反應器一側之入口1204之位置的距離。下面進一步揭示了如何製造及使用端口來將材料引入及持續供應至此反應器中以將石墨烯生長至小熔融顆粒上的細節。更具體地,關於圖13示出及描述圖12之反應器中之某些組件。 When using the pulsed microwave process flow 1200 shown, graphene grows onto small molten particles. This is accomplished by interactions that occur within the pulsed microwave reactor around inlet 1204, such as where metal powder and carrier gas are introduced into the reactor chamber. In addition to inlet 1204, process gas ports 1202 and additional ports (such as additional port 1203 1 and additional port 1203 2 ) are also provided at different heights on one side of the reactor apparatus. The waveguide traverses at least the distance from the location of process gas port 1202 on one side of the reactor to the location of inlet 1204 on one side of the reactor. The details of how to make and use ports to introduce and continuously supply materials into this reactor to grow graphene onto small molten particles are further disclosed below. More specifically, certain components in the reactor of FIG. 12 are shown and described with respect to FIG. 13 .

圖13為用於將石墨烯生長至小熔融顆粒上之習知脈衝微波電漿噴塗波導設備1300的透視圖。作為選項,脈衝微波電漿噴塗波導設備1300或其任何態樣之一或多種變型可在本文所描述之實施方式之架構及功能的上下文中實施。脈衝微波電漿噴塗波導設備1300或其任何態樣可在任何環境中實施。 FIG. 13 is a perspective view of a known pulsed microwave plasma spraying waveguide apparatus 1300 for growing graphene onto small molten particles. As an option, the pulsed microwave plasma spraying waveguide apparatus 1300 or one or more variations thereof may be implemented in the context of the architecture and functionality of the embodiments described herein. The pulsed microwave plasma spraying waveguide apparatus 1300 or any of its aspects may be implemented in any environment.

在該實施方式中,將微波遞送組件及脈衝電源整合以形成「surfaguide」(或類似物)氣體反應器。如所示出,此等組件之組合經組態以促進使用微波電漿炬將石墨烯生長至小熔融顆粒上。 In this embodiment, a microwave delivery component and a pulsed power source are integrated to form a "surfaguide" (or similar) gas reactor. As shown, the combination of these components is configured to facilitate the growth of graphene onto small molten particles using a microwave plasma torch.

替代方法為使用鎢惰性氣體(TIG)電漿源執行微焊接,以部分或完全地使金屬熔化。關於圖14示出並描述此類微焊接技術。 An alternative approach is to perform micro welding using a tungsten inert gas (TIG) plasma source to partially or completely melt the metal. This type of micro welding technique is shown and described with respect to FIG. 14 .

圖14為用於將石墨烯生長至小熔融顆粒上之微焊接技術1400的示意性描繪。作為選項,微焊接技術1400或其任何態樣之一或多種變型可在本文所描述之實施方式之架構及功能的上下文中實施。微焊接技術1400或其任何態樣可在任何環境中實施。 FIG. 14 is a schematic depiction of a micro-welding technique 1400 for growing graphene onto small molten particles. Alternatively, the micro-welding technique 1400 or one or more variations thereof may be implemented within the context of the architecture and functionality of the embodiments described herein. The micro-welding technique 1400 or any aspect thereof may be implemented in any environment.

低功率低流量TIG焊機電源及具有定制電漿容納區段之控制單元可有效地用於加熱所有類型之金屬顆粒。如所示出,當排氣羽流插入於表面波電漿氣體離解管中時,該排氣羽流允許保持足夠高之溫度來生長石墨烯。涉及對非平衡條件下形成的由烴及其他添加氣體構成之電漿自由基之控制的該生長模式提供了許多可被微波電漿噴塗設備之許多不同組態所利用的調諧機會。圖15、圖18A1、圖18A2、圖18B、圖18C及圖18D以及其他圖及對應之書面描 述揭示了電漿噴塗設備之例示性組態。 A low power, low flow TIG welder power source and control unit with a customized plasma containment section can be effectively used to heat all types of metal particles. As shown, the exhaust plume allows the temperature to be maintained high enough to grow graphene when inserted into the surface wave plasma gas decomposition tube. This growth mode involving the control of plasma radicals formed under non-equilibrium conditions composed of hydrocarbons and other added gases provides many tuning opportunities that can be utilized by many different configurations of microwave plasma spraying equipment. Figures 15, 18A1, 18A2, 18B, 18C and 18D and other figures and corresponding written descriptions reveal exemplary configurations of plasma spraying equipment.

圖15為呈同軸組態1500之電漿噴塗設備的示意性描繪。作為選項,同軸組態1500或其任何態樣之一或多種變型可在本文所揭示之實施方式之架構及功能的上下文中實施。同軸組態1500或其任何態樣可在任何環境中實施。 FIG. 15 is a schematic depiction of a plasma spraying apparatus in a coaxial configuration 1500. As an option, the coaxial configuration 1500 or one or more variations thereof may be implemented in the context of the architecture and functionality of the embodiments disclosed herein. The coaxial configuration 1500 or any of its aspects may be implemented in any environment.

在同軸式實施方式中,微波能量遞送係經由饋入天線中之TEM波實現,其中同軸部件之外部部分為石英管,該石英管之外部為流動之粉末金屬顆粒。在此實例中,饋入中心區域中之氣體為諸如甲烷等烴氣體,該烴氣體在該中心區域吸收微波輻射。粉末藉由自中心區域逸出之微波能量及外部感應加熱來加熱,從而使金屬粉末(呈微粒形式)在顯示之反應器室之傾斜部分或尖端附近熔化。當CH4分解(為其組成物質、碳、氫及/或其衍生物)時,碳自由基經由電漿自由基之能量在熔融金屬液滴表面上成核。微波占空比之調諧及感應加熱之調諧以及電漿特性之調諧有助於維持熔體與電漿分解/電離區域之間的不同溫度。此外,非平衡溫度允許(促進)石墨烯/碳之內部晶格放置,且快速淬火創造了有利於其他covetic材料生長之條件。 In a coaxial implementation, microwave energy delivery is achieved via TEM waves fed into an antenna, where the outer portion of the coaxial component is a quartz tube, outside of which are flowing powdered metal particles. In this example, the gas fed into the central region is a hydrocarbon gas such as methane, which absorbs microwave radiation in the central region. The powder is heated by microwave energy escaping from the central region and external induction heating, causing the metal powder (in particulate form) to melt near the inclined portion or tip of the reactor chamber shown. As CH4 decomposes (to its constituent species, carbon, hydrogen, and/or derivatives thereof), carbon radicals nucleate on the surface of the molten metal droplets via the energy of the plasma radicals. Tuning of microwave duty cycle and tuning of induction heating and tuning of plasma properties help maintain the temperature difference between the melt and plasma decomposition/ionization region. In addition, non-equilibrium temperature allows (promotes) internal lattice placement of graphene/carbon, and rapid quenching creates conditions that are favorable for the growth of other covetic materials.

圖16為示出了藉由經歷一系列非平衡能量條件進行加工之材料之演變的電漿噴塗設備1600的示意性描繪。作為選項,電漿噴塗設備1600(或其任何態樣)之一或多種變型可在本文所揭示之實施方式之架構及功能的上下文中實施。電漿噴塗設備1600或其任何態樣可在任何環境中實施。 FIG. 16 is a schematic depiction of a plasma spraying apparatus 1600 showing the evolution of a material being processed by undergoing a series of non-equilibrium energy conditions. As an option, one or more variations of the plasma spraying apparatus 1600 (or any aspect thereof) may be implemented in the context of the architecture and functionality of the embodiments disclosed herein. The plasma spraying apparatus 1600 or any aspect thereof may be implemented in any environment.

該圖描繪了材料在其通過該設備時之演變。具體地,該圖描繪了在其中發生不同漸進性變化之區域,使得在尖端附近之區域中石墨烯生長至小金屬熔體顆粒上。此材料沉積至基板上。 The figure depicts the evolution of the material as it passes through the device. Specifically, the figure depicts the regions where different asymptotic changes occur, resulting in graphene growth onto small metal melt particles in the region near the tip. This material is deposited onto a substrate.

圖17描繪了用於將石墨烯生長至熔融顆粒上之表面波電漿系統1700。作為選項,表面波電漿系統1700或其任何態樣之一或多種變型可在本文所揭示之實施方式之架構及功能的上下文中實施。電漿系統1700或其任何態樣 可在任何環境中實施。 FIG. 17 depicts a surface wave plasma system 1700 for growing graphene onto molten particles. As an option, the surface wave plasma system 1700 or one or more variations thereof may be implemented in the context of the architecture and functionality of the embodiments disclosed herein. The plasma system 1700 or any of its aspects may be implemented in any environment.

在所示組態中,供應氣體被饋入設備之中心區域中。在此實例中,使用了諸如甲烷等烴氣體。烴氣體吸收微波輻射,該微波輻射為加熱金屬粉末提供熱源。因此,金屬粉末係使用以下兩者來加熱以在尖端附近熔化及變成熔融的:(1)自中心區域逸出之微波能量;及(2)外部感應加熱。當烴氣體分解時,碳自由基經由電漿自由基之能量在熔融金屬液滴表面上成核。 In the configuration shown, the supply gas is fed into the central region of the apparatus. In this example, a hydrocarbon gas such as methane is used. The hydrocarbon gas absorbs the microwave radiation, which provides the heat source for heating the metal powder. Thus, the metal powder is heated to melt and become molten near the tip using: (1) microwave energy escaping from the central region; and (2) external induction heating. As the hydrocarbon gas decomposes, carbon radicals nucleate on the surface of the molten metal droplet via the energy of the plasma radicals.

圖18A1描繪了電漿噴塗炬之軸向場組態1810。已經使用若干不同之設備及對應製程討論了covetic材料之形成。可對上述設備及對應製程中之任何設備及製程進行調諧以達到用於形成covetic材料之特定條件。在所示之具體軸向場組態中,製程包括在電極之間產生電場1804,以產生通過金屬及碳材料之熔體的電流。具體地且如所示出,特別組態之電漿炬具有外部控制之場,在該場中,熔化顆粒形成電漿,該電漿繼而變成元電極。場另一側之電極由所示之生長板1803形成。covetic材料加速通過加速區域1821,然後沉積至表面上。所產生之合金及covetic材料繼續沉積至生長板上及/或碰撞區域1823中先前沉積之材料上。該沉積技術產生碳載量均質且濃度高之材料。 Figure 18A1 depicts an axial field configuration 1810 of a plasma spraying torch. The formation of covetic materials has been discussed using several different apparatuses and corresponding processes. Any of the above apparatuses and corresponding processes can be tuned to achieve specific conditions for forming covetic materials. In the specific axial field configuration shown, the process includes generating an electric field 1804 between electrodes to generate a current through a melt of metal and carbon materials. Specifically and as shown, a specially configured plasma torch has an externally controlled field in which the melting particles form a plasma, which in turn becomes a primary electrode. The electrode on the other side of the field is formed by the growth plate 1803 shown. The covetic material is accelerated through the acceleration zone 1821 and then deposited onto the surface. The resulting alloy and covetic material continues to deposit onto the growth plate and/or previously deposited material in the collision zone 1823. This deposition technique produces a material with a homogeneous carbon loading and high concentration.

可選擇及改變輸入材料,以便實現表現出特定性質之材料。例如且如所示出,電漿噴塗炬之輸入可包括各種輸入氣體1812以及輸入金屬及/或碳顆粒1818。上述輸入可被引入至一或多個輸入端口1862中。在一些情況下,輸入金屬及/或碳顆粒被夾帶在輸入氣體1812之流內。此外,生長板可在正在進行之沉積期間改變其尺寸及組成。例如且如所示出,生長板1803最初可為基板1816,在該基板之頂部沉積有炬料流中之熱covetic材料,該炬料流在covetic材料沉積時至少部分地使基板熔化。所沉積之熱covetic材料自熔融或部分熔融狀態冷卻以形成淬火層。 Input materials may be selected and varied to achieve materials exhibiting specific properties. For example and as shown, the input to the plasma spray torch may include various input gases 1812 and input metal and/or carbon particles 1818. The above inputs may be introduced into one or more input ports 1862. In some cases, the input metal and/or carbon particles are entrained in the stream of input gas 1812. In addition, the growth plate may change its size and composition during ongoing deposition. For example and as shown, the growth plate 1803 may initially be a substrate 1816, on top of which is deposited hot covetic material in a torch stream, which at least partially melts the substrate as the covetic material is deposited. The deposited hot covetic material is cooled from a molten or partially molten state to form a quenched layer.

以此方式,可形成任何數量之層。可控制基板處及/或最頂層處或最 頂層附近之溫度,使得當下一層材料落在剛剛先前沉積之層的熔融金屬上時,新沉積之層以側向方式生長以在此熔融金屬表面上產生單層石墨烯。該機制與其他技術之區別至少在於,與其中碳自熔融金屬漿料中沉澱出來之習知金屬熔化方法103相比,本文揭示之電漿噴塗炬方法104之應用導致在短時間段內淬火,使得沒有足夠之時間讓碳自基體中沉澱出來。因此,covetic鍵在整個層中保持完整。片刻後,在淬火已經形成金屬固體及分散良好之碳之後,在其頂部上噴塗另一層,依此類推,從而形成單層石墨烯之層,該等層生長、俘獲並快速淬火以在基體內產生具有極高碳載量之真正covetic材料。作為一個實例,當使用習知金屬熔化方法103(參見圖1A)時,碳載量可達到6%之碳金屬。相比之下,當使用電漿噴塗炬方法104(參見圖1A)時,很容易實現60%之碳載量。在一些情況下,對電漿噴塗炬及其環境之輸入及製程參數的嚴格控制允許所產生材料中之碳載量接近多達90%。 In this way, any number of layers can be formed. The temperature at the substrate and/or at or near the topmost layer can be controlled so that when the next layer of material is dropped onto the molten metal of the just previously deposited layer, the newly deposited layer grows in a lateral manner to produce a single layer of graphene on the surface of this molten metal. The mechanism differs from other techniques at least in that, compared to the known metal melting method 103 in which carbon is precipitated from a molten metal slurry, the use of the plasma spray torch method 104 disclosed herein results in a quenching in a short period of time, so that there is not enough time for the carbon to precipitate from the matrix. Therefore, the covetic bond remains intact throughout the layer. A moment later, after quenching has formed a metallic solid with well-dispersed carbon, another layer is sprayed on top of it, and so on, thereby forming layers of monolayer graphene that grow, entrap, and rapidly quench to produce a truly covetic material with extremely high carbon loadings within the matrix. As an example, when using the conventional metal melting method 103 (see FIG. 1A ), carbon loadings of 6% carbon metal can be achieved. In contrast, when using the plasma spray torch method 104 (see FIG. 1A ), 60% carbon loadings are easily achieved. In some cases, tight control of the input and process parameters of the plasma spray torch and its environment allows carbon loadings in the resulting material to approach as much as 90%.

使用電漿噴塗炬之實驗結果已經表明,可藉由至少兩種快速淬火(諸如「噴濺」)方法形成高負載高度均勻之covetic層。第一種方法引入碳顆粒來覆蓋金屬顆粒(諸如在電漿中),且然後將所產生之熱混合物噴塗至溫度低得多之基板上。第二種方法在電漿中產生石墨烯,且然後引入覆蓋石墨烯之熔融金屬。在該兩種情況下,真正之covetic(指共價及金屬化學之組合)鍵合在處於電漿羽流中時發生,且噴霧之快速淬火用於將混合物俘獲至有機金屬晶格中。 Experimental results using plasma spray torches have shown that highly uniform covetic layers can be formed at high loadings by at least two rapid quenching (i.e., "spraying") methods. The first method introduces carbon particles to coat metal particles (e.g., in a plasma), and then sprays the resulting hot mixture onto a much cooler substrate. The second method produces graphene in a plasma, and then introduces molten metal to coat the graphene. In both cases, true covetic (referring to a combination of covalent and metallic chemistry) bonding occurs while in the plasma plume, and rapid quenching of the spray serves to entrap the mixture into an organometallic lattice.

如圖18A2所示,可藉由控制電漿火焰1814與基板之間的距離及/或藉由控制基板1816處之溫度(諸如高於或低於環境溫度)及/或藉由控制反應器內部及周圍之壓力使淬火層1824之深度或厚度更厚或更薄。 As shown in FIG. 18A2 , the depth or thickness of the quenching layer 1824 can be made thicker or thinner by controlling the distance between the plasma flame 1814 and the substrate and/or by controlling the temperature at the substrate 1816 (e.g., higher or lower than the ambient temperature) and/or by controlling the pressure in and around the reactor.

圖18B描繪了電漿噴塗炬之徑向場組態1820。在該組態中,熔化顆粒在炬內形成電漿,其中電漿變成元電極。其他電極係由內壁之一側形成。 FIG18B depicts a radial field configuration 1820 of a plasma spraying torch. In this configuration, the molten particles form a plasma inside the torch, where the plasma becomes the primary electrode. The other electrode is formed by one side of the inner wall.

圖18A1、圖18A2及圖18B之前述組態僅為實例。在不脫離本文揭 示之電漿噴塗炬之一般性的情況下,涉及不同輸入材料及不同輸入端口組態之其他組態亦為可能的。此外,涉及不同輸入材料及不同輸入端口組態之不同組態可達到相同的預期結果。例如,經調諧以實現相同所得材料之兩種不同組態關於圖18C及圖18D示出及描述。具體地,圖18C及圖18D中之例示性組態可用於將陶瓷膜材料電漿噴塗炬沉積至含碳顆粒(諸如含石墨烯之顆粒)上。 The aforementioned configurations of Figures 18A1, 18A2, and 18B are examples only. Other configurations involving different input materials and different input port configurations are possible without departing from the generality of the plasma spray torch disclosed herein. Furthermore, different configurations involving different input materials and different input port configurations may achieve the same desired results. For example, two different configurations tuned to achieve the same resulting material are shown and described with respect to Figures 18C and 18D. Specifically, the exemplary configurations in Figures 18C and 18D may be used for plasma spray torch deposition of ceramic membrane materials onto carbonaceous particles, such as graphene-containing particles.

實際上,含碳材料之薄膜沉積(諸如經由大氣壓化學氣相沉積(APECVD)及/或化學氣相沉積(CVD)之其他變型)已進入材料加工之許多領域。涉及此類含碳材料之各種複合材料及塗層可表現出改良之物理性質(諸如強度、防腐蝕性等)。憑藉含碳材料內之分子級組態,各種2D碳及3D碳之形態特性有助於複合材料及塗層具有此等改良之物理性質。在一些情況下,在複合材料及塗層中使用2D碳及3D碳大大提高了所得含碳材料之耐高溫性;然而,在一些情況下,此等高溫升高到~2100℃以上,此高到足以燃燒2D碳及3D碳本身。遺憾的係,破壞2D碳及3D碳繼而破壞了複合材料或塗層中由碳最初產生之益處。因此,需要沉積技術(諸如電漿噴塗炬組態)來產生不受高於碳燃燒溫度之溫度影響之複合材料或塗層。 In fact, thin film deposition of carbonaceous materials (such as by atmospheric pressure chemical vapor deposition (APECVD) and/or other variations of chemical vapor deposition (CVD)) has entered many areas of material processing. Various composites and coatings involving such carbonaceous materials can exhibit improved physical properties (such as strength, corrosion resistance, etc.). The various 2D carbon and 3D carbon morphological characteristics contribute to the composites and coatings having these improved physical properties by virtue of the molecular level configuration within the carbonaceous materials. In some cases, the use of 2D and 3D carbon in composites and coatings greatly improves the high temperature resistance of the resulting carbonaceous materials; however, in some cases, these high temperatures rise to above ~2100°C, which is high enough to burn the 2D and 3D carbons themselves. Unfortunately, the destruction of the 2D and 3D carbons in turn destroys the benefits of the carbon in the composite or coating in the first place. Therefore, deposition techniques (such as plasma spray torch configurations) are needed to produce composites or coatings that are not affected by temperatures above the carbon combustion temperature.

圖18C描繪了此組態,僅作為非限制性實例。藉由調諧輸入及各種反應器內條件,含石墨烯之材料可塗覆有有機改性矽(ORMOSIL)之吸熱層。ORMOSIL陶瓷材料沉積至含石墨烯之材料上可經由若干方法實現,該等方法包括使用含矽前體1841(諸如六甲基二矽氧烷)及諸如氧氣等反應性氣體進行大氣、反應性電漿增強化學氣相沉積之製程。含矽前體及氧氣之此特定混合物在電漿內具有反應性。在電漿火焰內發生之分子離解導致氧化矽沉積至諸如前述生長板1803等表面上。為此,控制反應器內條件使得有機改性矽陶瓷在含碳顆粒在反應器內形成時就沉積至其表面上。控制反應器內生長及反應器內沉積(諸如藉由控制APECVD製程)導致在含碳顆粒周圍形成薄之石英塗層,該等含碳顆 粒繼而沉積至基板上。薄石英塗層充當阻燃層,以防止含碳顆粒在高溫下燃燒。 FIG. 18C depicts this configuration as a non-limiting example only. By tuning the inputs and various in-reactor conditions, the graphene-containing material can be coated with a heat absorbing layer of organically modified silicon (ORMOSIL). Deposition of the ORMOSIL ceramic material onto the graphene-containing material can be achieved by a number of methods, including an atmospheric, reactive plasma enhanced chemical vapor deposition process using a silicon-containing precursor 1841 (such as hexamethyldisiloxane) and a reactive gas such as oxygen. This particular mixture of silicon-containing precursors and oxygen is reactive in the plasma. The molecular dissociation that occurs in the plasma flame causes silicon oxide to be deposited onto surfaces such as the aforementioned growth plate 1803. To this end, the conditions in the reactor are controlled so that the organic modified silicon ceramic is deposited on the surface of the carbonaceous particles as they are formed in the reactor. Controlling the growth in the reactor and the deposition in the reactor (e.g. by controlling the APECVD process) results in the formation of a thin quartz coating around the carbonaceous particles, which in turn are deposited on the substrate. The thin quartz coating acts as a flame retardant to prevent the carbonaceous particles from burning at high temperatures.

圖18D描繪了替代組態,僅作為非限制性實例。如所示出,將金屬材料及/或含碳材料輸入至反應器中。控制微波能量1822以至少達到離解含碳材料(諸如圖10中之T(c-dis))之溫度。將含矽前體1841(諸如HMDSO、HMDSN等)引入至電漿火焰中,且將電漿餘輝中之溫度降低。由於溫度降低,碳顆粒開始形成,從而變得被氧化矽塗覆。然後塗覆有氧化矽之碳顆粒沉積至基板上。 FIG. 18D depicts an alternative configuration, by way of non-limiting example only. As shown, a metallic material and/or a carbon-containing material is introduced into the reactor. The microwave energy 1822 is controlled to at least reach a temperature that dissociates the carbon-containing material (such as T(c-dis) in FIG. 10). A silicon-containing precursor 1841 (such as HMDSO, HMDSN, etc.) is introduced into the plasma flame, and the temperature in the plasma afterglow is reduced. As the temperature decreases, carbon particles begin to form, thereby becoming coated with silicon oxide. The carbon particles coated with silicon oxide are then deposited onto the substrate.

在一個實施方式中,可將此等3D材料之大約10nm厚之薄層沉積至基板上,該基板即便在1200℃亦不會燃燒或著火。此係因為原始碳(諸如石墨烯)係結晶的,如此其並非非晶形材料。而是,該原始碳已經變為其根本不能再被燃燒之狀態。 In one implementation, a thin layer of these 3D materials, about 10 nm thick, can be deposited onto a substrate that will not burn or catch fire even at 1200°C. This is because the original carbon (such as graphene) is crystalline, so it is not an amorphous material. Rather, the original carbon has been transformed into a state where it can no longer be burned at all.

在一種使用情況下,前述電漿噴塗炬技術可用於產生新型非共熔焊料。或者作為另一種使用情況,電漿噴塗炬可將材料塗層直接噴塗至基板上,以防止下面之材料氧化。 In one use case, the plasma spray torch technology described above can be used to create new non-eutectic solders. Or, as another use case, the plasma spray torch can spray a coating of material directly onto a substrate to prevent oxidation of the underlying material.

除了形成即使在大氣壓下於1200℃下亦不會燃燒之材料之外,將石英置於材料周圍通常會產生巨大之應用優勢。 Besides forming a material that will not burn at 1200°C even at atmospheric pressure, placing quartz around materials generally creates huge application advantages.

除了有機改性矽之外,其他有機物質亦可用于塗覆碳顆粒或碳層。可控制塗層之特性。作為一個實例,噴塗材料之表面之孔隙可經調諧而為水力光滑的。 In addition to organically modified silica, other organic substances can also be used to coat carbon particles or carbon layers. The properties of the coating can be controlled. As an example, the porosity of the surface of the sprayed material can be tuned to be hydraulically smooth.

電漿噴塗炬可用于形成由石墨烯及矽構成之吸熱、經玻璃塗覆、不可燃之石墨烯,其中矽塗覆石墨烯,使得石墨烯能夠承受高於1600℃之溫度。此吸熱、經玻璃塗覆的、不可燃的石墨烯吸收紅外能量。 Plasma spraying torches can be used to form heat absorbing, glass coated, non-flammable graphene composed of graphene and silicon, wherein silicon coats the graphene so that the graphene can withstand temperatures above 1600°C. This heat absorbing, glass coated, non-flammable graphene absorbs infrared energy.

一種用於產生有機改性矽塗層之具體方法包括以下步驟(例如):(1)將含矽前體引入至電漿噴塗炬設備中;(2)將含矽前體與載氣組合,該載氣具有夾帶在前體氣體中之碳顆粒;及(3)用矽塗覆碳顆粒。 A specific method for producing an organically modified silicon coating includes the following steps (for example): (1) introducing a silicon-containing precursor into a plasma spray torch apparatus; (2) combining the silicon-containing precursor with a carrier gas having carbon particles entrained in the precursor gas; and (3) coating the carbon particles with silicon.

由圖18C及/或圖18D之電漿噴塗炬組態產生的阻燃及紅外遮蔽材料之特性可至少部分地藉由控制反應器中之時間-溫度路徑來調諧。更一般地,由圖18A1、圖18A2、圖18B、圖18C或圖18D之電漿噴塗炬組態產生的材料之特性可至少部分地藉由控制(諸如脈衝)反應器內之微波能量來調諧。 The properties of the flame retardant and infrared shielding materials produced by the plasma spray torch configurations of FIG. 18C and/or FIG. 18D can be tuned at least in part by controlling the time-temperature path in the reactor. More generally, the properties of the materials produced by the plasma spray torch configurations of FIG. 18A1, FIG. 18A2, FIG. 18B, FIG. 18C, or FIG. 18D can be tuned at least in part by controlling (e.g., pulsing) the microwave energy within the reactor.

圖19為描繪了在脈衝接通及脈衝斷開期間之能量對時間之表1900。更具體地,該圖示出了一個完整之時間循環,自時間T=0至50微秒,其中微波被連續打開,且然後所示循環之剩餘部分描繪了微波被關閉之時間。繪製之曲線描繪了(1)密度之變化及(2)循環中溫度之變化。在時間T=0時,溫度處於最低點(諸如圖之原點處所描繪)。溫度迅速上升,然後下降,在該時間期間電漿密度達到相對穩定之值。當在時間T=50微秒關閉微波時,電漿密度及暫時之電子溫度均迅速下降。可控制脈衝時間及占空比,以便在任何時間點達到特定之密度及溫度。 FIG. 19 is a graph 1900 depicting energy versus time during pulse on and pulse off periods. More specifically, the graph shows a complete time cycle, from time T=0 to 50 microseconds, where the microwaves are continuously turned on, and then the remainder of the cycle depicts the time that the microwaves are turned off. The plotted curves depict (1) the change in density and (2) the change in temperature during the cycle. At time T=0, the temperature is at its lowest point (as depicted at the origin of the graph). The temperature rises rapidly and then drops, during which time the plasma density reaches a relatively stable value. When the microwaves are turned off at time T=50 microseconds, both the plasma density and the temporary electron temperature drop rapidly. The pulse time and duty cycle can be controlled to achieve a specific density and temperature at any point in time.

圖20A1描繪了示出當使用電漿噴塗炬將碳及銅組合時發生之有機金屬鍵合的影像。如所示出,碳2052深深嵌入銅2054中。如通常理解及本文所提及,有機金屬化學意謂著有機金屬化合物、在有機分子之碳原子與金屬(包括鹼金屬、鹼土金屬及過渡金屬,且有時會擴大到包括諸如硼、矽及錫等類金屬)之間含有至少一個化學鍵之化合物的研究。除了與有機基片段或分子之鍵合外,與「無機」碳(如一氧化碳(羰基金屬)、氰化物或碳化物)之鍵合通常亦被視為係有機金屬的。有機金屬化合物之討論中可包含如過渡金屬氫化物及金屬膦複合物等相關化合物,但嚴格地說,其不一定為有機金屬的。 FIG. 20A1 depicts an image showing the organometallic bonding that occurs when carbon and copper are combined using a plasma spray torch. As shown, carbon 2052 is deeply embedded in copper 2054. As generally understood and referred to herein, organometallic chemistry refers to the study of organometallic compounds, compounds containing at least one chemical bond between a carbon atom of an organic molecule and a metal, including alkali metals, alkaline earth metals, and transition metals, and sometimes expanded to include metalloids such as boron, silicon, and tin. In addition to bonding to organic radical fragments or molecules, bonding to "inorganic" carbon, such as carbon monoxide (carbonyl), cyanide, or carbide, is also generally considered to be organometallic. Discussion of organometallic compounds may include related compounds such as transition metal hydrides and metal phosphine complexes, but strictly speaking, they are not necessarily organometallic.

在有機金屬化學中,有機銅化合物含有碳與銅化學鍵,且可具有獨特之物理性質、合成及反應。有機銅化合物之結構及反應性可能多種多樣,但對銅(I)之氧化態仍然有些限制,諸如表示為Cu+。作為d10金屬中心,其與Ni(0)有關,但由於其較高之氧化態,其參與較少之π反饋鍵合。Cu(II)及Cu(III)之有 機衍生物可被稱為中間體,但很少被分離或甚至觀察到。在幾何形狀方面,銅(I)採用對稱結構,與其球形電子外殼保持一致。通常,可採用以下三種協調幾何形狀之一:線性2坐標、三角3坐標及四面體4坐標。有機銅化合物與各種軟配體(諸如烷基膦(R3P)、硫醚(R2S)及氰化物(CN-))形成複合物。 In organometallic chemistry, organocuprants contain carbon and copper chemical bonds and can have unique physical properties, syntheses, and reactions. The structure and reactivity of organocuprants can be quite varied, but there are some restrictions on the oxidation state of copper(I), such as Cu + . As a d10 metal center, it is related to Ni(0), but due to its higher oxidation state, it participates in less π-back bonding. Organic derivatives of Cu(II) and Cu(III) can be called intermediates, but are rarely isolated or even observed. In terms of geometry, copper(I) adopts a symmetric structure, consistent with its spherical electron shell. Generally, one of three coordination geometries can be adopted: linear 2-coordinate, trigonal 3-coordinate, and tetrahedral 4-coordinate. Organocopper compounds form complexes with various soft ligands such as alkyl phosphines (R 3 P), sulfides (R 2 S), and cyanides (CN - ).

藉由上述技術中之任何一或多種技術,圖20A1及圖20A2中描繪之碳可與銅化學鍵合,而不是僅僅與銅並置以經由凡得瓦力(諸如指原子或分子之間的距離相關相互作用)黏附於其上。與離子鍵或共價鍵不同,凡得瓦力並非由化學電子鍵產生;凡得瓦力相對較弱,因此更容易受到干擾。此外,凡得瓦力在相互作用分子之間的距離較長時會迅速消失。而是,希望金屬與碳之間進行有機金屬鍵合。 By any one or more of the above techniques, the carbon depicted in FIG. 20A1 and FIG. 20A2 can be chemically bonded to the copper, rather than merely juxtaposed to the copper to adhere to it via van der Waals forces (i.e., distance-dependent interactions between atoms or molecules). Unlike ionic or covalent bonds, van der Waals forces are not generated by chemical electronic bonds; van der Waals forces are relatively weak and therefore more susceptible to perturbations. Furthermore, van der Waals forces vanish rapidly at longer distances between interacting molecules. Instead, organometallic bonding between the metal and the carbon is desired.

圖20A2描繪了表示施加至基板材料之物質之分級組合物並示出三種材料性質區域的影像。本體金屬區域2066為該三個材料性質區域中之第一材料性質區域。如所示出,第一材料性質區域包括呈第一晶型之金屬,該第一晶型具有第一材料性質區域中存在之金屬原子之間的顯著金屬鍵。此第一材料性質區域與至少部分地與第一材料性質區域重疊之第二材料性質區域實質上相鄰。covetic材料區域2064包括呈第二晶型之至少一些碳原子,其中第二晶型具有至少一些非極性共價鍵,該等非極性共價鍵位於存在於第二材料性質區域之碳原子中之一些碳原子與存在於第一材料性質區域中之金屬原子之間。頂表面區域2062為至少部分地與第二材料性質區域重疊之第三材料性質區域。此頂表面區域包括以第三晶型取向之其他碳原子。第三晶型之特徵在於在存在於第三材料性質區域中之額外碳原子中之單獨碳原子之間具有至少一些非極性共價鍵。在各種實施方式中,在該等區域中之任何區域中可存在一些金屬原子,且在該等區域中之任何區域中可存在一些碳原子。然而,此實施方式之特徵在於與本體金屬區域2066鄰接之更高金屬含量區域2074。在各種實施方式中,在該 等區域中之任何區域中可存在一些碳原子,且在該等區域中之任何區域中可存在一些金屬原子。然而,此實施方式之特徵在於與頂表面區域2062鄰接之更高碳含量區域2072。 Figure 20A2 depicts an image representing a graded composition of substances applied to a substrate material and showing three material property regions. Bulk metal region 2066 is the first of the three material property regions. As shown, the first material property region includes metal in a first crystalline form having significant metal bonds between metal atoms present in the first material property region. This first material property region is substantially adjacent to a second material property region that at least partially overlaps the first material property region. Covetic material region 2064 includes at least some carbon atoms in a second crystalline form, wherein the second crystalline form has at least some non-polar covalent bonds between some of the carbon atoms present in the second material property region and metal atoms present in the first material property region. The top surface region 2062 is a third material property region that at least partially overlaps with the second material property region. This top surface region includes additional carbon atoms oriented in a third crystal form. The third crystal form is characterized by having at least some non-polar covalent bonds between individual carbon atoms in the additional carbon atoms present in the third material property region. In various embodiments, there may be some metal atoms in any of the regions and some carbon atoms in any of the regions. However, this embodiment is characterized by a higher metal content region 2074 adjacent to the bulk metal region 2066. In various embodiments, there may be some carbon atoms in any of the regions and some metal atoms in any of the regions. However, this embodiment is characterized by a higher carbon content region 2072 adjacent to the top surface region 2062.

圖20B為描繪了當將碳添加至本體鋁時發生之若干分層組態的材料演變表20B00。在此等實施方式中,材料被噴塗至現有的富碳covetic基板或碳化物層上,以經由碳燒結及/或金屬熔體封裝來產生碳與碳之鍵合,繼而產生附著物以形成複合膜。材料演變表20B00僅為噴塗至鋁本體材料上之組合材料(碳化矽)之一個實例。可對該製程進行調諧以產生沉積至本體材料上之covetic或covetic樣膜。然後可塗覆所產生之材料以產生功能化之頂層。用於將組合材料噴塗至基板上之設備的一種可能組態在圖21A中給出。 Figure 20B is a material evolution table 20B00 depicting several layered configurations that occur when carbon is added to bulk aluminum. In these embodiments, the material is sprayed onto an existing carbon-rich covetic substrate or carbide layer to produce carbon-carbon bonds through carbon sintering and/or metal melt encapsulation, followed by adhesion to form a composite film. Material evolution table 20B00 is just one example of a composite material (silicon carbide) sprayed onto an aluminum bulk material. The process can be tuned to produce covetic or covetic-like films deposited onto bulk materials. The resulting material can then be coated to produce a functionalized top layer. One possible configuration of an apparatus for spraying a composite material onto a substrate is shown in FIG. 21A .

圖21A描繪了用於將材料之熔融混合物噴塗至基板上之設備。該圖描繪了微波反應器,該微波反應器在貯存容器內包括多個區域。脈衝微波能量被遞送至貯存容器中。經由入口端口提供烴製程氣體605。微波能量將製程氣體加熱到足夠高之溫度以形成電漿。貯存容器內材料之膨脹會產生電漿羽流。將材料連續添加至貯存容器中與上述膨脹相組合會在羽流中及其周圍產生炬效應。由於電漿羽流內部及其周圍之高溫,碳與氫離解,從而形成幾種不同之烴物質(諸如CH3、CH2)。隨著溫度繼續升高(如所示出,在第一區域2104中),所有或幾乎所有之碳原子皆與氫離解。使用任何已知技術(諸如使用氣-固分離器),將僅含氫之物質與固體碳物質分離。 FIG. 21A depicts an apparatus for spraying a molten mixture of materials onto a substrate. The figure depicts a microwave reactor that includes multiple zones within a storage vessel. Pulsed microwave energy is delivered to the storage vessel. A hydrocarbon process gas 605 is provided through an inlet port. The microwave energy heats the process gas to a temperature high enough to form a plasma. The expansion of the material within the storage vessel produces a plasma plume. The continuous addition of material to the storage vessel combined with the above expansion produces a torch effect in and around the plume. Due to the high temperatures in and around the plasma plume, carbon and hydrogen dissociate to form several different hydrocarbons (e.g., CH 3 , CH 2 ). As the temperature continues to increase (as shown in the first zone 2104), all or nearly all of the carbon atoms dissociate from the hydrogen. The hydrogen-only material is separated from the solid carbon material using any known technique, such as using a gas-solid separator.

在貯存容器之第一區域2104與貯存容器之第二區域2106之間的界面處,熔融金屬或熔融金屬複合材料或熔融陶瓷-金屬或金屬基體或任何種類之金屬混合物經由第二入口被引入至貯存容器(如所示出)中。第二入口之位置係基於電漿羽流之尺寸及/或進入貯存容器之入口點處之熔融金屬之溫度來選擇。更具體地,在熔融金屬與碳物質混合之位置處將金屬熔體2108引入至反應器中。 當混合物流過(諸如以高速率)貯存容器時,混合物冷卻至較低之溫度。流動之混合物以高速率離開貯存器,使得碳及熔融金屬之混合物自出口2110噴出。將混合物沉積(諸如經由將噴塗材料2112噴塗)至目標基板2116上。關於圖23A至圖23D示出並討論了用於控制噴塗材料2112及/或所得沉積材料2114之均勻性的各種機制。 At the interface between the first region 2104 of the storage vessel and the second region 2106 of the storage vessel, molten metal or molten metal composite or molten ceramic-metal or metal matrix or any kind of metal mixture is introduced into the storage vessel (as shown) through a second inlet. The location of the second inlet is selected based on the size of the plasma plume and/or the temperature of the molten metal at the entry point into the storage vessel. More specifically, the metal melt 2108 is introduced into the reactor at a location where the molten metal mixes with the carbon material. As the mixture flows through the storage vessel (e.g., at a high rate), the mixture cools to a lower temperature. The flowing mixture leaves the storage vessel at a high rate, causing the mixture of carbon and molten metal to spray out from outlet 2110. The mixture is deposited (e.g., by spraying the spray material 2112) onto the target substrate 2116. Various mechanisms for controlling the uniformity of the spray material 2112 and/or the resulting deposited material 2114 are shown and discussed with respect to FIGS. 23A-23D.

第二區域中之溫度足夠低以致於碳中之至少一些碳自混合物中沉澱出來。然而,大部分離解之碳仍與熔融金屬混合。當與碳混合之熔融金屬到達目標基板2116時,其冷卻成固體。在自熔融混合物轉變為固體沉積物期間,碳被截留在金屬層與碳層之間。在某些溫度下,碳與金屬形成非極性共價鍵,因此產生covetic材料。由於金屬基體與碳之間的內聚力(諸如非極性共價鍵)增加,該covetic材料表現出一系列機械、熱學、電學及摩擦學性質。 The temperature in the second zone is low enough that at least some of the carbon precipitates out of the mixture. However, most of the dissociated carbon remains mixed with the molten metal. When the molten metal mixed with the carbon reaches the target substrate 2116, it cools to a solid. During the transition from the molten mixture to the solid deposit, the carbon is trapped between the metal layer and the carbon layer. At certain temperatures, the carbon forms nonpolar covalent bonds with the metal, thereby producing a covetic material. Due to the increase in cohesive forces (such as nonpolar covalent bonds) between the metal matrix and the carbon, the covetic material exhibits a range of mechanical, thermal, electrical, and tribological properties.

此類covetic材料為使用脈衝微波能量來控制反應器之第一區域及第二區域中材料成分之能量分佈的結果。更具體地,反應器之第一區域及第二區域中材料成分之能量分佈可部分地藉由脈衝微波及部分地藉由在反應器室之外部環境中使金屬顆粒預熔融來控制(諸如以便將完全熔融或部分熔融之金屬引入至反應器室中)。可單獨或組合使用任何已知技術來使金屬顆粒熔化。如此,可控制完全熔化或部分熔化之顆粒的程度及/或混合。 Such covetic materials are the result of using pulsed microwave energy to control the energy distribution of material components in the first and second regions of the reactor. More specifically, the energy distribution of material components in the first and second regions of the reactor can be controlled in part by pulsed microwaves and in part by pre-melting metal particles in the external environment of the reactor chamber (e.g., so that fully molten or partially molten metal is introduced into the reactor chamber). Any known technique can be used alone or in combination to melt the metal particles. In this way, the degree and/or mixing of fully molten or partially molten particles can be controlled.

圖21B描繪了用於將covetic材料噴塗至基板上之方法。該方法可結合圖21A中之設備使用。如所示出,該方法係使用具有用於製程氣體之入口、用於金屬熔體之入口及出口之微波反應器來執行。在操作之前,微波反應器被組態為具有用於烴製程氣體之入口、用於金屬熔體之入口,及出口(操作21B02)。在操作21B10處,入口用於將烴製程氣體引入反應器之第一區域中。使用微波能量,反應器之第一區域中之溫度升高,使得烴製程氣體在接觸金屬熔體之前離解成碳及氫物質。不同之入口用於將金屬熔體引入反應器之第二區 域中(操作21B20)。保持第二區域中之高溫直至離解之碳與金屬熔體混合(操作21B30)。上述羽流之作用用於將混合物移動至反應器之第三區域中(操作21B40)。移動遠離微波能源具有降低混合物溫度之效果,直至碳中之至少一些碳自混合物中冷凝出來(操作21B50)。然而,即使溫度降低,電漿炬效應仍用於使混合物以高速率移動通過出口(操作21B60)。如此,將熔融混合物噴塗至基板上(操作21B70)。 FIG. 21B depicts a method for spraying a covetic material onto a substrate. The method may be used in conjunction with the apparatus of FIG. 21A. As shown, the method is performed using a microwave reactor having an inlet for a process gas, an inlet for a metal melt, and an outlet. Prior to operation, the microwave reactor is configured to have an inlet for a hydrocarbon process gas, an inlet for a metal melt, and an outlet (operation 21B02). At operation 21B10, the inlet is used to introduce the hydrocarbon process gas into a first region of the reactor. Using microwave energy, the temperature in the first region of the reactor is increased, causing the hydrocarbon process gas to dissociate into carbon and hydrogen species before contacting the metal melt. A different inlet is used to introduce the metal melt into a second region of the reactor (operation 21B20). The elevated temperature in the second zone is maintained until the dissociated carbon is mixed with the metal melt (operation 21B30). The action of the plume described above serves to move the mixture into the third zone of the reactor (operation 21B40). Moving away from the microwave energy source has the effect of lowering the temperature of the mixture until at least some of the carbon condenses out of the mixture (operation 21B50). However, even with the lowered temperature, the plasma torch effect serves to move the mixture through the outlet at a high rate (operation 21B60). In this manner, the molten mixture is sprayed onto the substrate (operation 21B70).

圖21C為描繪了用於噴塗膜之電漿噴塗製程之示意圖。如所示出,碳自由基、多環芳香族物、石墨烯片材及金屬顆粒在電漿反應器(諸如指所示之第一區域2104)中在高溫下混合。在此等高溫下發生成核,且在反應器(諸如指所示之第二區域2106)內溫度降低時,開始生長及組合。藉由被塗覆了少層石墨烯的亞微米大小之鋁顆粒描繪了一種可能之生長機制。此等亞微米大小之鋁顆粒可使用金屬鍵、非極性共價鍵及covetic鍵之組合而保持在一起。更具體地且如以2nm級所示的,碳原子與鋁原子鍵合。碳原子被組織到位於鋁基體內、較佳地交錯於鋁基體之基面之間的相干石墨烯平面中。涉及鋁之前述討論僅為實例。可使用其他金屬。事實上,相干石墨烯平面可不僅位於(同樣,較佳地位於基面之間)面心立方(FCC)金屬晶格中,而且亦位於體心立方(BCC)金屬晶格中,或者位於六方密積(HCC)金屬晶格中。 FIG. 21C is a schematic diagram depicting a plasma spraying process for spraying a film. As shown, carbon radicals, polycyclic aromatics, graphene sheets, and metal particles are mixed at high temperatures in a plasma reactor (such as the first region 2104 shown by the finger). Nucleation occurs at these high temperatures, and growth and assembly begin as the temperature decreases within the reactor (such as the second region 2106 shown by the finger). One possible growth mechanism is depicted by submicron-sized aluminum particles coated with a few layers of graphene. These submicron-sized aluminum particles can be held together using a combination of metallic bonds, nonpolar covalent bonds, and covetic bonds. More specifically and as shown at the 2 nm level, carbon atoms are bonded to aluminum atoms. The carbon atoms are organized in coherent graphene planes located within an aluminum matrix, preferably interlaced between the basal planes of the aluminum matrix. The previous discussion involving aluminum is merely an example. Other metals can be used. In fact, coherent graphene planes can be located not only in a face-centered cubic (FCC) metal lattice (again, preferably between the basal planes), but also in a body-centered cubic (BCC) metal lattice, or in a hexagonal close-packed (HCC) metal lattice.

然後前述經塗覆之顆粒可被燒結以形成直徑大約為100μm之顆粒。此等半熔融顆粒然後加速通過反應器,且碰撞到基板上(諸如在第一次通過中)或碰撞到先前沉積之碰撞顆粒層上(諸如在第二次或第N次通過中)。 The coated particles may then be sintered to form particles of approximately 100 μm in diameter. These semi-molten particles are then accelerated through the reactor and collide with the substrate (such as in the first pass) or with a previously deposited layer of collision particles (such as in the second or Nth pass).

圖22A描繪了用於用熔融金屬包裹碳顆粒之設備。圖22A中設備之組態與圖21A中設備之組態的不同之處至少在於使用熔化設備2209控制熔融金屬之引入。當將熔融金屬引入至反應器中時,控制金屬熔體以產生包裹在碳顆粒周圍之熔融金屬。 FIG. 22A depicts an apparatus for encapsulating carbon particles with molten metal. The configuration of the apparatus in FIG. 22A differs from the configuration of the apparatus in FIG. 21A at least in that a melting apparatus 2209 is used to control the introduction of the molten metal. When the molten metal is introduced into the reactor, the metal melt is controlled to produce molten metal encapsulating the carbon particles.

圖22B描繪了用於用熔融金屬包裹碳顆粒之方法。在操作之前,微波反應器被組態為具有用於烴製程氣體之入口、用於金屬熔體之入口,及出口(操作22B02)。在操作22B10中,入口用於將烴製程氣體引入反應器之第一區域中。該方法與圖21B之方法的不同之處至少在於,在操作22B30中,反應器之不同區域中的溫度被保持,使得一些碳顆粒物質由離解之碳形成。前述羽流之作用用於將混合物移動至反應器之第三區域中(操作22B40)。在操作22B50中,此等碳顆粒中之至少一些碳顆粒被熔融金屬包裹。在碳顆粒之組成原子與金屬熔體之原子之間形成一些鍵。在操作21B60中,金屬包裹之碳顆粒移動通過出口,從而進一步降低溫度。當金屬包裹之顆粒沉積至基板上時(操作21B70),在金屬包裹之碳與基板之金屬之間形成其他鍵。 FIG. 22B depicts a method for coating carbon particles with molten metal. Prior to operation, a microwave reactor is configured to have an inlet for a carbonizing process gas, an inlet for a metal melt, and an outlet (operation 22B02). In operation 22B10, the inlet is used to introduce the carbonizing process gas into a first region of the reactor. The method differs from the method of FIG. 21B in at least that, in operation 22B30, the temperature in different regions of the reactor is maintained so that some of the carbon particle material is formed from dissociated carbon. The action of the aforementioned plume is used to move the mixture into a third region of the reactor (operation 22B40). In operation 22B50, at least some of the carbon particles are coated with molten metal. Some bonds are formed between the constituent atoms of the carbon particles and the atoms of the metal melt. In operation 21B60, the metal-encapsulated carbon particles move through an outlet, thereby further reducing the temperature. When the metal-encapsulated particles are deposited onto a substrate (operation 21B70), additional bonds are formed between the metal-encapsulated carbon and the metal of the substrate.

圖23A、圖23B、圖23C及圖23D描繪了根據一些實施方式之例示性沉積技術。 Figures 23A, 23B, 23C, and 23D depict exemplary deposition techniques according to some implementations.

如圖23A所示,所沉積之材料具有曲線形狀,其特徵在於更高高度之中間區域及更低高度之端部區域。在一些情況下,此為少量沉積材料之所要形狀。在其他情況下,希望將沉積材料噴塗至更大之區域上。此可藉由相對於噴霧移動基板或藉由相對於基板移動噴霧來實現。圖23B描繪了佈置至供帶盤上之撓性基板2310。撓性基板可被拉到收帶盤上並圍繞收帶盤。如此且在圖23B之組態中,噴霧將covetic材料均勻地沉積至移動之基板上。當噴塗材料2112與基板之間的相對移動受到控制時,所得沉積材料具有均勻之厚度。 As shown in Figure 23A, the deposited material has a curved shape characterized by a middle region of higher elevation and end regions of lower elevation. In some cases, this is the desired shape for a small amount of deposited material. In other cases, it is desirable to spray the deposited material over a larger area. This can be accomplished by moving the substrate relative to the spray or by moving the spray relative to the substrate. Figure 23B depicts a flexible substrate 2310 disposed on a supply reel. The flexible substrate can be pulled onto and around a take-up reel. In this manner and in the configuration of Figure 23B, the spray deposits the covetic material uniformly onto the moving substrate. When the relative movement between the sprayed material 2112 and the substrate is controlled, the resulting deposited material has a uniform thickness.

在一些情況下,希望在沉積材料之表面處具有不平坦但均勻之圖案化。在此類情況下,基板之移動可逐步通過一系列離散位置,從而形成圖23C之圖案化。另外地或替代地,開縫天線可設置於噴塗材料2112與基板之間。開縫天線藉由將噴霧均勻地分佈在開縫天線之側向距離上起作用。使用此開縫天線,噴塗材料2112之單個點可具有實質上如圖23D所示之厚度及表面均勻性。 In some cases, it is desirable to have an uneven but uniform patterning at the surface of the deposited material. In such cases, the movement of the substrate may be stepped through a series of discrete locations to form the patterning of FIG. 23C. Additionally or alternatively, a slotted antenna may be disposed between the sprayed material 2112 and the substrate. The slotted antenna functions by distributing the spray uniformly over the lateral distance of the slotted antenna. Using this slotted antenna, a single point of the sprayed material 2112 may have a thickness and surface uniformity substantially as shown in FIG. 23D.

圖24A及圖24B描繪了用於將材料沉積至基板上之習知技術。如圖24A所示,經由使用黏結劑(諸如聚合物)將碳團聚物保持在一起。此導致碳團聚物與基板之間的界面處之結合較弱。圖24B描繪了使用黏結劑將碳材料塗覆至基板上。使用黏結劑之習知沉積遭受剝離之不利影響。此外,即使當基板之表面經過機械預處理及/或藉由黏結劑材料之沉積進行預處理時,基板與碳團聚物之間的相互作用亦較弱。 Figures 24A and 24B depict known techniques for depositing materials onto a substrate. As shown in Figure 24A, the carbon agglomerates are held together by the use of a binder, such as a polymer. This results in a weak bond at the interface between the carbon agglomerates and the substrate. Figure 24B depicts the coating of the carbon material onto the substrate using a binder. Known depositions using binders suffer from the adverse effects of peeling. Furthermore, even when the surface of the substrate is mechanically pretreated and/or pretreated by deposition of a binder material, the interaction between the substrate and the carbon agglomerates is weak.

如前所述,基於使用黏結劑及/或使用塗覆技術(諸如關於圖24A及圖24B所示及描述)將材料沉積至基板上之塗層遭受剝離、低強度特性及其他非所要之機械性質的不利影響。在圖25A及圖25B中示出及討論了基於電漿噴塗技術之改良。 As previously mentioned, coatings based on depositing materials onto substrates using adhesives and/or using coating techniques (such as shown and described with respect to FIGS. 24A and 24B ) suffer from peeling, low strength characteristics, and other undesirable mechanical properties. An improvement based on plasma spraying techniques is shown and discussed in FIGS. 25A and 25B .

圖25A及圖25B描繪了根據一些實施方式的在基板之表面處產生非極性共價鍵合的例示性沉積技術。具體地且如所示出,當使用本文揭示之技術時,藉由碳與基板之間的非極性共價鍵形成covetic材料。如此,不需要或不使用黏結劑。此外,在基板與covetic材料之間的界面處形成的許多非極性鍵為強共價鍵。在一種特定情況下,當基板為鋁時,在鋁之面心立方結構中的原子與六邊形結構中的碳原子之間形成非極性共價鍵。圖25B中描繪了界面鍵合之示意圖。 25A and 25B depict exemplary deposition techniques for producing nonpolar covalent bonds at the surface of a substrate according to some embodiments. Specifically and as shown, when the techniques disclosed herein are used, a covetic material is formed by nonpolar covalent bonds between carbon and the substrate. As such, no binder is required or used. Furthermore, many of the nonpolar bonds formed at the interface between the substrate and the covetic material are strong covalent bonds. In one particular case, when the substrate is aluminum, nonpolar covalent bonds are formed between atoms in the face-centered cubic structure of the aluminum and carbon atoms in the hexagonal structure. A schematic diagram of the interfacial bonding is depicted in FIG. 25B .

圖26A、圖26B、圖26C及圖26D呈現了描繪如何在鋁之面心立方結構的正方形形狀中之位點與碳之某些晶體結構中出現的六邊形形狀中之位點之間形成非極性共價鍵的示意圖。 Figures 26A, 26B, 26C, and 26D present schematic diagrams depicting how nonpolar covalent bonds are formed between sites in the square shape of the face-centered cubic structure of aluminum and sites in the hexagonal shape that occur in certain crystal structures of carbon.

圖26A為示出了鋁之面心立方結構之正方形形狀的正交視圖。圖26B為示出了鋁之某些晶體結構中出現之六邊形形狀的正交視圖。 FIG. 26A is an orthogonal view showing a square shape of the face-centered cubic structure of aluminum. FIG. 26B is an orthogonal view showing a hexagonal shape that occurs in certain crystal structures of aluminum.

圖26C描繪了鋁之面心立方結構之正方形形狀的頂部上之碳之某些晶體結構中出現的六邊形形狀之一種可能疊加。圖26D描繪了在某些位點處形 成之非極性共價鍵。鋁之面心立方結構之實例僅為一個實例。具有其他晶體結構之其他金屬為可能的。藉由一些實施例展現的意想不到之性質假設係由碳原子與金屬原子之間的非極性共價鍵合係足夠的/有效的而能夠「截留」通常存在於展現出金屬鍵合之化合物中的所有或實質上所有(例如,至少90%、至少95%、至少98%、至少99%等)「自由」電子引起的,因此更改通常與金屬及含金屬化合物中存在「自由」電子相關聯的性質。例如,某些實施方式之特徵可能在於創新物質組合物之表面實際上不具有「自由」電子,因此展現出降低之導熱性及/或導電性。此外,對於實際上不具有「自由」電子之實施方式,創新組合物之表面在暴露於周圍空氣時不會氧化。 FIG. 26C depicts one possible superposition of hexagonal shapes that occur in certain crystal structures of carbon on top of the square shape of the face-centered cubic structure of aluminum. FIG. 26D depicts the non-polar covalent bonds that form at certain sites. The example of the face-centered cubic structure of aluminum is just one example. Other metals with other crystal structures are possible. The unexpected properties exhibited by some embodiments are hypothesized to be caused by the non-polar covalent bonding between carbon atoms and metal atoms being sufficient/effective to be able to "trap" all or substantially all (e.g., at least 90%, at least 95%, at least 98%, at least 99%, etc.) of the "free" electrons that are normally present in compounds that exhibit metallic bonding, thereby altering the properties normally associated with the presence of "free" electrons in metals and metal-containing compounds. For example, certain embodiments may be characterized in that the surface of the inventive composition of matter has substantially no "free" electrons, and therefore exhibits reduced thermal and/or electrical conductivity. In addition, for embodiments having substantially no "free" electrons, the surface of the inventive composition does not oxidize when exposed to ambient air.

圖26E為分層之covetic材料26E00之實例,其中石墨烯樣結構夾在金屬材料層之間。金屬材料之較低層為基板層。金屬材料之頂層係由之前在處於反應器中時熔融之淬火材料形成。由於兩個金屬層之間形成了金屬-金屬鍵,夾在金屬材料層之間的石墨烯樣結構被捕獲在兩個金屬層之間。除了金屬鍵之外,亦形成了用於將石墨烯樣材料包圍在金屬層之間的其他鍵。在一些位置中,碳晶格中存在缺陷。各種類型之鍵在此類缺陷之間或附近形成。 FIG. 26E is an example of a layered covetic material 26E00 in which a graphene-like structure is sandwiched between layers of metal material. The lower layer of metal material is a substrate layer. The top layer of metal material is formed from a quenched material that was previously melted while in a reactor. The graphene-like structure sandwiched between the layers of metal material is trapped between the two metal layers due to the metal-metal bonds formed between the two metal layers. In addition to the metal bonds, other bonds are formed that serve to enclose the graphene-like material between the metal layers. In some locations, there are defects in the carbon lattice. Various types of bonds are formed between or near such defects.

任何或所有用於形成covetic材料之前述技術可用於涉及許多不同類型之基板的很多應用中。此外,可控制噴霧與基板之間的相對移動以產生任何厚度之沉積物。可使用任何已知技術來控制相對移動。例如,出口可在固定基板上移動。此可使用相對於固定基板移動之手持裝置或機器人控制之裝置來實現。在一些情況下,可使基板經受偏壓,使得自出口噴出之材料中之至少一些材料被靜電吸引至基板之表面。此在其中基板不均勻平坦之應用中具有適用性。作為實例,基板不均勻平坦之應用可包括:(1)用於經受腐蝕性惡劣條件之機械中的成型組件;(2)渦輪葉片;(3)熱交換器組件等,其中許多應用將在下文進一步討論。 Any or all of the aforementioned techniques for forming covetic materials can be used in many applications involving many different types of substrates. In addition, the relative movement between the spray and the substrate can be controlled to produce a deposit of any thickness. The relative movement can be controlled using any known technique. For example, the outlet can be moved over a fixed substrate. This can be accomplished using a handheld device or a robotically controlled device that moves relative to the fixed substrate. In some cases, the substrate can be subjected to a bias so that at least some of the material ejected from the outlet is electrostatically attracted to the surface of the substrate. This has applicability in applications where the substrate is not uniformly flat. As examples, applications where the substrate is not uniformly flat may include: (1) molded components used in machinery that are subject to corrosive conditions; (2) turbine blades; (3) heat exchanger components, etc., many of which are discussed further below.

在其他情況下,可經由使用各種化學氣相沉積技術及/或各種化學氣相沉積技術之組合來增強沉積之特性(諸如厚度、橫向均勻性等)。僅作為一個實例,可控制與本領域已知之電漿增強化學氣相沉積技術有關之態樣或參數,以便最佳化沉積之covetic材料層之特性。作為另一個實例,不是將covetic材料沉積至表面上以形成膜或塗層,而是可將covetic材料形成為顆粒(諸如藉由噴塗至較低溫度環境中)並收集粉末形式之顆粒。下面簡要討論涉及產生及使用粉末狀covetic材料之各種技術。 In other cases, the properties of the deposit (e.g., thickness, lateral uniformity, etc.) may be enhanced by using various chemical vapor deposition techniques and/or combinations of various chemical vapor deposition techniques. As just one example, the states or parameters associated with plasma enhanced chemical vapor deposition techniques known in the art may be controlled to optimize the properties of the deposited covetic material layer. As another example, rather than depositing the covetic material onto a surface to form a film or coating, the covetic material may be formed into particles (e.g., by spraying into a relatively low temperature environment) and the particles collected in powder form. Various techniques involving the production and use of powdered covetic materials are briefly discussed below.

粉末狀covetic材料Powdered covetic material

在一些情況下,不是將covetic材料形成為基板上或其中之膜或塗層,而是可將covetic材料以covetic材料粉末之形式遞送。此粉末狀covetic材料可在其離開反應器時被收集,冷卻至低於covetic材料熔點之溫度並以粉末之形式被收集。粉末繼而可在室溫下處理(諸如儲存及運輸、傾倒、混合等)。然後可將粉末重熔並壓制成型件或重熔並重新噴塗。作為實例,在高腐蝕性環境中使用之組件可使用射出成型或擠壓由此類粉末狀covetic材料形成。可單獨或組合地使用許多設備來形成及運輸covetic材料粉末。關於圖27A、圖27B1及圖27B2示出並討論了例示性設備。 In some cases, rather than forming the covetic material as a film or coating on or in a substrate, the covetic material may be delivered in the form of a covetic material powder. This powdered covetic material may be collected as it leaves the reactor, cooled to a temperature below the melting point of the covetic material and collected in powder form. The powder may then be processed at room temperature (e.g., storage and transport, pouring, mixing, etc.). The powder may then be remelted and pressed into a molded part or remelted and re-sprayed. As an example, components for use in highly corrosive environments may be formed from such powdered covetic materials using injection molding or extrusion. A number of equipment may be used, alone or in combination, to form and transport covetic material powders. An exemplary apparatus is shown and discussed with respect to FIGS. 27A, 27B1, and 27B2.

圖27A描繪了用於在迫使噴霧通過微波反應器之出口2110時使用冷卻區域2702來冷卻噴塗材料2112以產生粉末狀covetic材料2710的例示性設備27A00。按任何組合之任何一或多種冷卻技術可用於將冷卻區域2702中之covetic材料的溫度降低至低於covetic材料之熔點的溫度。冷卻區域2702可容納一或多個設備以引起冷卻。例如且如所示出,收集容器2704可裝配有一或多個設備以在收集容器中引起旋風效應,從而增加用於降低covetic材料之溫度的時間。在一些情況下,控制(諸如經由增加或減少時間)冷卻covetic材料之時間,以允許covetic材料以高度規則之鍵合進行退火。在一些情況下,控制covetic材 料冷卻之時間允許covetic材料結晶成高度規則之晶體結構,同時仍保持粉末形式。在一些實施方式中,可在微波反應器之出口2110與收集容器2704之間裝配機械轉筒-攪拌器。轉筒-攪拌器可定期清潔或更換。 FIG. 27A depicts an exemplary apparatus 27A00 for cooling a sprayed material 2112 using a cooling zone 2702 to produce a powdered covetic material 2710 while forcing the spray through an outlet 2110 of a microwave reactor. Any one or more cooling techniques in any combination may be used to reduce the temperature of the covetic material in the cooling zone 2702 to a temperature below the melting point of the covetic material. The cooling zone 2702 may house one or more devices to cause cooling. For example and as shown, the collection container 2704 may be equipped with one or more devices to cause a cyclonic effect in the collection container, thereby increasing the time for reducing the temperature of the covetic material. In some cases, controlling the time for cooling the covetic material (e.g., by increasing or decreasing the time) allows the covetic material to anneal with highly regular bonding. In some cases, controlling the time for cooling the covetic material allows the covetic material to crystallize into a highly regular crystalline structure while still remaining in powder form. In some embodiments, a mechanical drum-stirrer may be installed between the outlet 2110 of the microwave reactor and the collection container 2704. The drum-stirrer may be cleaned or replaced periodically.

替代地或另外地,且在方便及/或需要在流體中容納及/或運輸粉末狀covetic材料之情況下,可使用流化床設備。例如,為了避免形成粉末顆粒之聚集體及/或團聚物,可將粉末狀covetic材料保持(例如,懸浮)在液體中。在一些實施方式中,流化床設備可裝配在微波反應器之出口2110與收集容器2704之間。關於圖27B1及圖27B2示出及描述了此類流化床設備之一個實施方式。 Alternatively or additionally, and where it is convenient and/or desirable to contain and/or transport the powdered covetic material in a fluid, a fluidized bed apparatus may be used. For example, to avoid the formation of aggregates and/or agglomerates of powder particles, the powdered covetic material may be maintained (e.g., suspended) in a liquid. In some embodiments, a fluidized bed apparatus may be mounted between the outlet 2110 of the microwave reactor and the collection container 2704. One embodiment of such a fluidized bed apparatus is shown and described with respect to FIGS. 27B1 and 27B2.

圖27B1及圖27B2描繪了用於冷卻及處理流體中之粉末狀covetic材料之例示性流化床設備27B00。 Figures 27B1 and 27B2 depict an exemplary fluidized bed apparatus 27B00 for cooling and processing powdered covetic materials in a fluid.

如所示出,熔融金屬及碳混合物被迫使通過反應器之出口並進入流化床2750之頂部中。當熔融金屬及碳混合物被迫使離開出口時,其以形成顆粒之方式冷卻。顆粒受到向下之重力的作用(諸如所示出,在向下之方向上),同時自流化床之底部驅迫製程流體2754以產生向上之力。如此,顆粒以比局部重力之加速度變化率慢之加速度變化率朝向流化床底部加速。可藉由流化床之幾何形狀來部分地調節流動動力學。例如且如所示出,一定長度之流化床可形成錐形主體2762,其中錐形主體之第一端部具有第一尺寸D1,且其中錐形主體之第二端部具有第二尺寸D2,且其中D1>D2。流化床之各個部分內的溫度可部分地藉由為線圈供電之電源2752(如所示出)及/或藉由在製程流體進入流化床底部之前加熱製程流體2754之熱源2760來控制。 As shown, the molten metal and carbon mixture is forced through the outlet of the reactor and into the top of the fluidized bed 2750. As the molten metal and carbon mixture is forced to leave the outlet, it cools in a manner that forms particles. The particles are acted upon by the downward force of gravity (in a downward direction as shown), while the process fluid 2754 is driven from the bottom of the fluidized bed to generate an upward force. In this way, the particles are accelerated toward the bottom of the fluidized bed at a rate of acceleration that is slower than the rate of acceleration of the local gravity. The flow dynamics can be partially adjusted by the geometry of the fluidized bed. For example and as shown, a fluidized bed of a certain length can form a conical body 2762, wherein the first end of the conical body has a first dimension D1, and wherein the second end of the conical body has a second dimension D2, and wherein D1>D2. The temperature within various portions of the fluidized bed may be controlled in part by a power source 2752 (as shown) that powers the coils and/or by a heat source 2760 that heats the process fluid 2754 before it enters the bottom of the fluidized bed.

流化床中及流化床之環境界面處之壓力及流速以及其他條件用於使粉末及流體混合物一起表現為流體。該混合物表現出流體之許多性質及特性,諸如在重力作用下自由流動之能力及/或使用流體處理技術進行泵送之能力。 Pressure and flow rates in and at the boundaries of the fluidized bed, along with other conditions, are used to cause the powder and fluid mixture to behave together as a fluid. The mixture exhibits many of the properties and characteristics of a fluid, such as the ability to flow freely under gravity and/or the ability to be pumped using fluid handling techniques.

在圖27B1及圖27B2之實施方式中,流化床具有定位於錐形主體不 同高度處之多個端口。此使得流體中之第一粉末27561在特定溫度/壓力下流出,而流體中之第二粉末27562在第二不同之特定溫度/壓力下流出。可控制通過多個端口之流量,使得收集容器可收納任何比率或量之流體中之第一粉末27561及流體中之第二粉末27562In the embodiment of Figures 27B1 and 27B2, the fluidized bed has multiple ports located at different heights of the conical body. This allows the first powder 2756 1 in the fluid to flow out at a specific temperature/pressure, and the second powder 2756 2 in the fluid to flow out at a second different specific temperature/pressure. The flow through the multiple ports can be controlled so that the collection container can receive any ratio or amount of the first powder 2756 1 in the fluid and the second powder 2756 2 in the fluid.

形成covetic材料之方法Method for forming covetic material

表3示出了用於形成粉末狀covetic材料之方法之一些非限制性實例。 Table 3 shows some non-limiting examples of methods for forming powdered covetic materials.

Figure 112134605-A0305-12-0059-3
Figure 112134605-A0305-12-0059-3

例示性方法1Illustrative method 1

在方法1之一些實施方式中,結構化碳(諸如碳同素異形體)形成于微波反應器之第一區域中(諸如經由烴製程氣體之離解)。在比第一區域低之溫度下的第二區域中,結構化碳用金屬裝飾,以便形成金屬化碳材料(諸如有機金屬材料)。金屬化碳材料被進一步冷卻至低於金屬熔點之溫度。在一些實施方式中,金屬化碳材料最初呈用金屬裝飾之碳顆粒形式。顆粒被進一步冷卻以便形成粉末。該粉末可被收集並被運輸至施加設施。包含具有covetic鍵之金屬化碳材料的粉末可重熔並與用於由粉末形成組件之任何已知技術一起使用。僅作為實例,組件可藉由使用模壓然後重熔、等靜壓制然後重熔、熱鍛、金屬射出成型、激光燒結等由粉末形成。 In some embodiments of method 1, structured carbon (such as a carbon allotrope) is formed in a first zone of a microwave reactor (such as by dissociation of a carbonizing process gas). In a second zone at a lower temperature than the first zone, the structured carbon is decorated with a metal to form a metallized carbon material (such as an organometallic material). The metallized carbon material is further cooled to a temperature below the melting point of the metal. In some embodiments, the metallized carbon material is initially in the form of carbon particles decorated with a metal. The particles are further cooled to form a powder. The powder can be collected and transported to an application facility. The powder comprising the metallized carbon material having a covetic bond can be remelted and used with any known technique for forming components from powders. As just examples, components may be formed from powders using compression molding followed by remelting, isostatic pressing followed by remelting, hot forging, metal injection molding, laser sintering, etc.

例示性方法2Illustrative method 2

在此方法2中,一或多種烴氣體(或在一些情況下為氣體及液體)輸入 至系統中。僅作為實例,可輸入至系統中之氣體及/或液體包含甲烷、乙烷、甲基乙炔-丙二烯丙烷(MAPP)及己烷。在處於第一溫度下之第一區域2104中,碳原子與其他原子離解(諸如與氫離解)。熔融金屬2108作為金屬顆粒被引入反應器中。然後,在第二區域2106中,在第一區域中產生之碳與金屬顆粒組合。碳可在金屬顆粒之表面上生長及/或在金屬顆粒之內部生長。在一些情況下及在一些條件下,碳生長包括2D碳在金屬顆粒上或金屬顆粒中之生長。在其他情況下及/或在其他條件下,碳生長包括3D碳在金屬顆粒上或金屬顆粒中之生長。在任何前述生長情況中,該生長可在晶格允許之最大程度上發生。例如,熔融金屬可為具有面心立方(FCC)晶體結構之鋁,且碳可形成具有高達特定濃度之鋁的固溶體。在一些實施方式中,碳形成具有高達由金屬性質(諸如晶體結構)確定之濃度之金屬的溶液,且然後自金屬-碳溶液中沉澱出來,以在金屬顆粒上及/或在金屬顆粒內形成2D或3D碳。 In this method 2, one or more hydrocarbon gases (or in some cases gases and liquids) are introduced into the system. By way of example only, the gases and/or liquids that may be introduced into the system include methane, ethane, methylacetylene-propylene propane (MAPP), and hexane. In a first zone 2104 at a first temperature, carbon atoms dissociate from other atoms (e.g., from hydrogen). Molten metal 2108 is introduced into the reactor as metal particles. Then, in a second zone 2106, the carbon produced in the first zone is combined with the metal particles. The carbon may grow on the surface of the metal particles and/or grow inside the metal particles. In some cases and under some conditions, carbon growth includes growth of 2D carbon on or in metal particles. In other cases and/or under other conditions, carbon growth includes growth of 3D carbon on or in metal particles. In any of the foregoing growth cases, the growth can occur to the maximum extent permitted by the crystal lattice. For example, the molten metal can be aluminum having a face-centered cubic (FCC) crystal structure, and the carbon can form a solid solution of aluminum up to a particular concentration. In some embodiments, the carbon forms a solution of the metal up to a concentration determined by the properties of the metal (such as the crystal structure), and then precipitates from the metal-carbon solution to form 2D or 3D carbon on and/or in the metal particles.

此方法2中之生長係在非平衡熱條件下進行。具體地,用於控制(例如)以下各項之各種不同熱條件:(1)第一區域中之控制前述離解所需要之第一溫度(諸如較高溫度),及(2)第二區域中之用於控制金屬粉末之初始熔化及/或第二區域中金屬-碳顆粒之形成及性質的第二溫度(諸如較低溫度)。此兩個區域中之溫度可為獨立控制的。使用此方法,噴塗材料為表現出真正covetic性狀之真正covetic材料。 The growth in this method 2 is carried out under non-equilibrium thermal conditions. Specifically, various different thermal conditions are used to control (for example) the following: (1) a first temperature (such as a higher temperature) in the first zone required to control the aforementioned dissociation, and (2) a second temperature (such as a lower temperature) in the second zone for controlling the initial melting of the metal powder and/or the formation and properties of the metal-carbon particles in the second zone. The temperatures in these two zones can be independently controlled. Using this method, the sprayed material is a true covetic material that exhibits true covetic properties.

例示性方法3Illustrative method 3

在其他非限制性實例中,輸入顆粒上之材料及/或塗層可由諸如三甲胺(TMA)、三甲基甘胺酸(TMG)及甲基乙炔-丙二烯丙烷等混合材料產生或沉積。顆粒可被冷卻並以粉末形式收集。可由第一區域中之目標材料產生的顆粒之一些實例為相控碳、碳化矽、金屬氧化物、金屬氮化物或金屬。在一些情況下,輸入顆粒為金屬,且化合物膜(諸如金屬氧化物或金屬氮化物)塗覆在金屬輸 入顆粒上,而在其他情況下,輸入顆粒含有化合物材料且金屬塗層沉積在輸入顆粒上。可由第一區域中之輸入氣體產生的顆粒之一些實例為碳同素異形體(諸如天然碳)、矽、ZnO、AlOx及NiO。 In other non-limiting examples, the material and/or coating on the input particles can be produced or deposited from mixed materials such as trimethylamine (TMA), trimethylglycine (TMG), and methylacetylene-propylene glycol. The particles can be cooled and collected in powder form. Some examples of particles that can be produced from the target material in the first region are phase-controlled carbon, silicon carbide, metal oxides, metal nitrides, or metals. In some cases, the input particles are metals and a compound film (such as a metal oxide or metal nitride) is coated on the metal input particles, while in other cases, the input particles contain a compound material and a metal coating is deposited on the input particles. Some examples of particles that may be produced from the input gas in the first zone are carbon allotropes (such as natural carbon), silicon, ZnO, AlOx, and NiO.

在一些實施方式中,將包含各種非烴氣體或醇之氣體輸入至第一區域中,且第一區域包括濺射設備及電源,其中濺射設備經組態以由所選目標材料產生多種離子物質。目標材料及離子物質相組合以形成多個顆粒。電源可為AC、DC、RF或大功率脈衝磁控管濺射(HIPIMS)電源且可經組態以藉由對功率、電壓、頻率、重複率及/或電源之其他特性進行調諧由目標材料產生多種離子物質。 In some embodiments, a gas comprising various non-hydrocarbon gases or alcohols is input into a first region, and the first region includes a sputtering device and a power source, wherein the sputtering device is configured to generate a plurality of ionic species from a selected target material. The target material and the ionic species are combined to form a plurality of particles. The power source can be an AC, DC, RF, or high power pulsed magnetron sputtering (HIPIMS) power source and can be configured to generate a plurality of ionic species from a target material by tuning the power, voltage, frequency, repetition rate, and/or other characteristics of the power source.

圖27C為描繪了用於產生粉末狀covetic材料之電漿噴塗製程的示意圖。 FIG. 27C is a schematic diagram illustrating a plasma spraying process for producing a powdered covetic material.

粉末狀材料加工序列Powder material processing sequence

圖27C示出了自烴裂化及顆粒成核(諸如所示之第一區域2104)至石墨烯生長(諸如所示之第二區域2106)、半熔融顆粒之冷卻(諸如在所示之冷卻區域中)及粉末狀covetic材料之收集(諸如在收集區域中,且進入收集容器2704中)之例示性粉末狀材料加工序列之視覺表示。現在簡要討論例示性粉末狀材料加工序列之功效背後的機制。 FIG. 27C shows a visual representation of an exemplary powdered material processing sequence from calcination and particle nucleation (as shown in the first region 2104) to graphene growth (as shown in the second region 2106), cooling of the semi-molten particles (as shown in the cooling region), and collection of the powdered covetic material (as shown in the collection region and into the collection container 2704). The mechanism behind the efficacy of the exemplary powdered material processing sequence is now briefly discussed.

在不存在金屬前體(無論是金屬有機抑或顆粒形式)之情況下,微波電漿將甲烷離解以形成碳自由基(以及多環芳香族物/乙炔),然後碳自由基(以及多環芳香族物/乙炔)將分別形成少層(FL)石墨烯(或堆疊片層)結構。然而,在電漿區域(諸如參考圖21A及圖22A之反應器)中存在金屬前體之情況下,金屬(來自金屬有機核或顆粒)可用作非均質碳生長(諸如呈電離自由基、石墨烯核或多環芳香族物(乙炔)之形式的碳)之種子位點。 In the absence of metal precursors (either metallo-organic or particulate form), microwave plasma dissociates methane to form carbon radicals (and polycyclic aromatics/acetylene), which then form few-layer (FL) graphene (or stacked sheet) structures, respectively. However, in the presence of metal precursors in the plasma region (such as the reactors of Figures 21A and 22A), the metal (from metallo-organic cores or particles) can be used as seed sites for heterogeneous carbon growth (such as carbon in the form of ionized radicals, graphene cores, or polycyclic aromatics (acetylene)).

當使用具有低溶解度之金屬諸如Al或Cu時,石墨烯片材可(諸如經 由吸附原子/單體或作為簇)生長至金屬表面上。生長之特性至少部分地取決於金屬表面處之界面自由能的對稱性及最小化。如此,碳生長發生在金屬顆粒處,同時在表面處發生金屬原子重新濺射事件,以產生混合及/或分層之金屬/碳結構。如本領域已知,金屬顆粒之半徑(諸如表面曲率)可能會影響碳在金屬顆粒中之溶解度。作為實例,較小之半徑(諸如對應於較高之曲率)會增加超過平衡之溶解度(在平坦表面),該溶解度之增加繼而可能會影響石墨烯層之厚度。 When using metals with low solubility such as Al or Cu, graphene sheets can be grown onto the metal surface (e.g., via adsorbed atoms/monomers or as clusters). The characteristics of the growth depend at least in part on the symmetry and minimization of the interfacial free energy at the metal surface. Thus, carbon growth occurs at the metal particles while metal atom respray events occur at the surface to produce mixed and/or layered metal/carbon structures. As is known in the art, the radius of the metal particle (e.g., surface curvature) may affect the solubility of carbon in the metal particle. As an example, a smaller radius (e.g., corresponding to a higher curvature) increases the solubility above equilibrium (at a flat surface), which in turn may affect the thickness of the graphene layer.

一旦粉末狀covetic材料2710已被收集於收集容器中,粉末狀covetic材料就可使用習知技術(諸如射出成型技術、使用粉末狀金屬之其他技術)進行進一步加工。 Once the powdered covetic material 2710 has been collected in the collection container, the powdered covetic material can be further processed using known techniques (e.g., injection molding techniques, other techniques using powdered metals).

使用粉末狀covetic材料之製造技術Manufacturing technology using powdered covetic material

圖28描繪了用於使用射出成型技術由粉末狀covetic材料製造組件之方法。如所示出,在針對將在特定應用及/或環境中使用之組件採集一組性質(操作2810),然後基於用於該應用或環境之性質中之至少一種性質選擇特定粉末狀covetic材料(操作2820)之後,開始該方法。該選擇可基於組件之所要機械性質,及/或基於組件在與其預期用途相對應之環境中的所要耐腐蝕性質,及/或其他所要性質。該選擇可基於多種所要性質,且在一些情況下,選擇工具基於一組性質及目標函數來解決最佳化問題。 FIG. 28 depicts a method for manufacturing a component from a powdered covetic material using injection molding techniques. As shown, the method begins after a set of properties are collected for a component to be used in a particular application and/or environment (operation 2810), and then a particular powdered covetic material is selected based on at least one of the properties for the application or environment (operation 2820). The selection can be based on desired mechanical properties of the component, and/or based on desired corrosion resistance properties of the component in an environment corresponding to its intended use, and/or other desired properties. The selection can be based on multiple desired properties, and in some cases, the selection tool solves an optimization problem based on a set of properties and an objective function.

一旦選擇了covetic材料(操作2820),就使所選粉末狀covetic材料(操作2825)熔化(操作2830)並將其引入至模具中(操作2840)。在模具內保持規定之溫度及規定之壓力,持續規定之持續時間(操作2850),在該持續時間之後,使模具內之溫度及壓力達到約30℃及約大氣壓(操作2860)。將組件自模具中釋離(操作2870)且部署在預期應用中(操作2880)。 Once the covetic material is selected (operation 2820), the selected powdered covetic material (operation 2825) is melted (operation 2830) and introduced into the mold (operation 2840). A specified temperature and a specified pressure are maintained in the mold for a specified duration (operation 2850), after which the temperature and pressure in the mold are brought to about 30°C and about atmospheric pressure (operation 2860). The assembly is released from the mold (operation 2870) and deployed in the intended application (operation 2880).

如之前提及,特定covetic材料之選擇可基於多種所要性質,該等性質中之一些性質可用作目標函數之變量。在一些情況下,特定covetic材料之選 擇可基於特定之主要性質(諸如機械強度、重量、耐腐蝕性等)。在一些情況下,所關注之性質為其他性質之比率,諸如強度:重量、比熱:重量等。在一些情況下,主要性質將在對其他性質之一或多種約束下最大化(或最小化)。 As mentioned previously, the selection of a particular covetic material can be based on a variety of desired properties, some of which can be used as variables in the objective function. In some cases, the selection of a particular covetic material can be based on a particular primary property (e.g., mechanical strength, weight, corrosion resistance, etc.). In some cases, the property of interest is a ratio of other properties, such as strength:weight, specific heat:weight, etc. In some cases, the primary property will be maximized (or minimized) under constraints on one or more of the other properties.

如此,粉末狀covetic材料可部署在廣泛之應用中。在許多情況下,由粉末狀covetic材料製成之所得組件優於由其他材料製成之組件。關於下圖29示出並討論了與某些主要性質相關之一些例示性應用。 As such, powdered covetic materials can be deployed in a wide range of applications. In many cases, the resulting components made from powdered covetic materials outperform components made from other materials. Some exemplary applications associated with certain key properties are shown and discussed with respect to FIG. 29 below.

圖29為描繪了covetic材料之各種性質的表2900。所示性質包括機械屬性、導熱性、抗氧化性、耐久性、耐高溫軟化性、耐疲勞性及導電性。此等參數中之各個參數及/或組合在選擇用於特定應用之特定covetic材料時變得占主要地位。 FIG. 29 is a table 2900 depicting various properties of covetic materials. The properties shown include mechanical properties, thermal conductivity, oxidation resistance, durability, resistance to high temperature softening, fatigue resistance, and electrical conductivity. Individual parameters and/or combinations of these parameters become dominant in selecting a particular covetic material for a particular application.

僅作為實例,在選擇用於製造耐腐蝕性閥之covetic材料時,抗氧化性可為主要參數。作為另一實例,當選擇將用於製造用於航空發動機渦輪之葉片的特定covetic材料時,諸如強度與重量比率等受強度最小約束影響的機械屬性可為主要機械屬性。該葉片亦可能需要表現出非常高之耐疲勞性。 As just one example, when selecting a covetic material to be used in the manufacture of a corrosion resistant valve, oxidation resistance may be the primary parameter. As another example, when selecting a particular covetic material to be used in the manufacture of a blade for an aircraft engine turbine, mechanical properties such as strength to weight ratio that are subject to minimal constraints on strength may be the primary mechanical properties. The blade may also need to exhibit very high fatigue resistance.

通常,covetic材料不僅表現出上述性質,而且密度比在製造covetic粉末中使用之金屬或合金之密度低。與在不存在碳載量之情況下由金屬或合金製成之相同組件相比,更低之密度經常與所形成組件的更低之重量相對應。如此,卡車部件(諸如所示出之駕駛室組件)、汽車部件(諸如門擋泥板、頂板等)、摩托車部件、腳踏車部件以及空中交通工具之各種組件(諸如結構構件)及/或水運工具及/或空基交通工具或平臺可利用與用於製造covetic材料之基礎金屬或合金相比重量與強度比率更低的covetic材料。 Typically, covetic materials not only exhibit the above properties, but also have a lower density than the metal or alloy used in making the covetic powder. The lower density often corresponds to a lower weight of the resulting component compared to the same component made from the metal or alloy in the absence of the carbon loading. Thus, truck components (such as the cockpit component shown), automotive components (such as door fenders, roof panels, etc.), motorcycle components, bicycle components, and various components of air vehicles (such as structural components) and/or watercraft and/or space-based vehicles or platforms can utilize covetic materials with a lower weight to strength ratio than the base metal or alloy used to make the covetic material.

作為另一實例,covetic材料經常表現出卓越之導熱性,使得由covetic材料形成之結構構件可用于高溫應用(諸如用於電子器件之散熱器、工業熱交換器等)。 As another example, covetic materials often exhibit excellent thermal conductivity, allowing structural components formed from covetic materials to be used in high temperature applications (such as heat sinks for electronic devices, industrial heat exchangers, etc.).

作為又一個實例,covetic材料經常表現出卓越之耐腐蝕性。更具體地,使用前述技術製成之covetic層壓件表現出極高之耐腐蝕性,即使在最頂層(諸如組件與環境界面處)亦如此。該性質在由covetic材料製成之組件經受惡劣環境時係特別有意義的。 As yet another example, covetic materials often exhibit excellent corrosion resistance. More specifically, covetic laminates made using the aforementioned techniques exhibit extremely high corrosion resistance, even at the topmost layers, such as at the interface between the component and the environment. This property is particularly significant when components made from covetic materials are subjected to harsh environments.

作為另一個實例,covetic材料可針對表面光滑度進行調諧。更具體地,使用前述技術製成之covetic層壓件表現出極高之表面光滑度。該表面光滑度性質在covetic材料用作熱遮蔽件時係特別有意義的,諸如在表面處之摩擦(諸如當流體以高速度流過表面時產生之摩擦)在表面處產生有害熱量之應用中可能需要的。藉由使用本文揭示之技術,covetic材料之具體組成及/或藉由使用本文揭示之用於covetic材料沉積之具體技術可產生水力光滑之表面,該水力光滑之表面可繼而用於空中交通工具及/或基於空間之交通工具。 As another example, covetic materials can be tuned for surface smoothness. More specifically, covetic laminates made using the aforementioned techniques exhibit extremely high surface smoothness. This surface smoothness property is particularly significant when the covetic material is used as a thermal shield, such as may be required in applications where friction at the surface (such as friction generated when a fluid flows over the surface at high speeds) generates harmful heat at the surface. By using the techniques disclosed herein, specific compositions of covetic materials and/or by using specific techniques disclosed herein for deposition of covetic materials, a hydrodynamically smooth surface can be produced, which can in turn be used in air vehicles and/or space-based vehicles.

在某些實施方案中,一組性質可主導其他性質。例如,基於空間之交通工具(諸如衛星)之表面可能需要對一定範圍之電磁輻射實質上不反射(諸如對可見光實質上不反射),而同時,基於空間之交通工具的表面可能需要係隔熱的(諸如不導熱的)。上文之調諧技術適用於此類情況,其中特定之所要性質(諸如非反射性)主導電漿噴塗炬之調諧,以便產生實質上不反射之表面,即使以其他性質為代價。 In some embodiments, one set of properties may dominate other properties. For example, the surface of a space-based vehicle (such as a satellite) may need to be substantially non-reflective to a certain range of electromagnetic radiation (such as substantially non-reflective to visible light), while at the same time, the surface of the space-based vehicle may need to be thermally insulating (such as non-conductive). The tuning techniques above are applicable to such situations, where a particular desired property (such as non-reflectivity) dominates the tuning of the plasma spray torch in order to produce a substantially non-reflective surface, even at the expense of other properties.

關於圖29示出並描述之性質僅為實例。額外之性質及/或性質組合在各種應用中可能係必要的或所要的,且基於輸入之調諧及電漿噴塗炬之控制在所得材料中表現出此等額外之性質。僅作為前述額外性質之實例,此類性質及/或性質組合可包括以下各項或與以下各項相關:強度-重量度量、及/或比密度、及/或機械韌性、及/或抗剪強度、及/或撓曲強度等。 The properties shown and described with respect to FIG. 29 are examples only. Additional properties and/or combinations of properties may be necessary or desired in various applications, and such additional properties may be manifested in the resulting material based on the tuning of the inputs and control of the plasma spray torch. As examples only of the aforementioned additional properties, such properties and/or combinations of properties may include or be related to the following: strength-to-weight measurements, and/or specific density, and/or mechanical toughness, and/or shear strength, and/or flexural strength, etc.

對於最終材料或組件之耐腐蝕性、及/或強度、及/或硬度、及/或其他特性,一些應用(例如,對於高應力/高溫操作,或對於在化學條件惡劣之環境 中的操作)具有特定規範。在一些情況中,該等特定規範可藉由使用一種合金來滿足,該合金繼而用於形成與特定應用對應之組件。VIM爐通常用於形成合金。有時,將粉末形式之含碳材料添加到合金混合物以便減少重量,同時維持合金之強度及/或其他特性。 Some applications (e.g., for high stress/high temperature operation, or for operation in chemically harsh environments) have specific specifications for corrosion resistance, and/or strength, and/or hardness, and/or other properties of the final material or component. In some cases, these specific specifications can be met by using an alloy that is then used to form the component corresponding to the specific application. VIM furnaces are often used to form the alloys. Sometimes, carbonaceous materials in powder form are added to the alloy mixture in order to reduce weight while maintaining the strength and/or other properties of the alloy.

遺憾的係,VIM爐產生強磁場。該強磁場對粉末之成分的影響通常強於重力對粉末之成分的影響。因此,該磁場具有有害效應,亦即,使粉末自VIM爐噴出,即便係在粉末有機會進入VIM爐之坩堝中、有機會熔化及隨後分散在混合物熔體中之前。一種用於解決粉末自VIM爐之該有害噴出的技術係將粉末造粒為緻密形式,使得在該形式被引入VIM爐中時,它不會因為VIM爐之磁力而被噴出。而是,丸粒狀形式進入VIM爐之坩堝中,使得它在VIM爐內部熔化,且使得它不會混合至熔融混合物中。 Unfortunately, a VIM furnace generates a strong magnetic field. The effect of this strong magnetic field on the composition of the powder is generally stronger than the effect of gravity on the composition of the powder. Therefore, this magnetic field has a detrimental effect, namely, causing the powder to eject from the VIM furnace even before the powder has a chance to enter the crucible of the VIM furnace, have a chance to melt, and subsequently disperse in the mixture melt. One technique for addressing this detrimental ejection of powder from a VIM furnace is to pelletize the powder into a dense form so that when the form is introduced into the VIM furnace, it is not ejected due to the magnetic forces of the VIM furnace. Instead, the pelletized form enters the crucible of the VIM furnace, causing it to melt inside the VIM furnace, and causing it not to mix into the molten mixture.

因此形成含碳合金,較佳為具有在上文關於covetic材料描述之至少一些(更佳地所有)物理特性之含碳合金。此類物理特性應被理解為包括但不限於高碳載量(例如,根據各個實施例,材料中大於1.5%、大於5%、大於15%、大於40%、大於60%及高達90%為碳);碳實質上均勻地分散於材料之表面層及/或本體中;碳存在於與碳成合金之金屬的晶格之間隙位點處;在材料之晶界處缺少碳聚集體及/或團聚物;圖30A1及圖30A2描繪了與熔化丸粒形式之金屬裝飾碳相比,與熔化粉末狀之金屬裝飾碳相關聯的問題及解決方案。該等圖係並排呈現以具體地說明與在VIM處理器中使用粉末相關聯的問題(30A100)及解決方案(30A200)。 Thus, a carbon-containing alloy is formed, preferably one having at least some (more preferably all) of the physical properties described above with respect to the covetic material. Such physical properties should be understood to include, but are not limited to, high carbon loading (e.g., greater than 1.5%, greater than 5%, greater than 15%, greater than 40%, greater than 60%, and up to 90% carbon in the material, according to various embodiments); carbon is substantially uniformly dispersed in the surface layer and/or bulk of the material; carbon is present at interstitial sites in the crystal lattice of the metal alloyed with the carbon; carbon aggregates and/or agglomerates are absent at the grain boundaries of the material; Figures 30A1 and 30A2 depict problems and solutions associated with melting metal decorative carbon in powder form compared to melting metal decorative carbon in pellet form. The figures are presented side by side to specifically illustrate the problems (30A100) and solutions (30A200) associated with using powders in a VIM processor.

如本領域中已知,真空感應熔化依賴於高功率電流產生源3006來在真空環境3002內熔化金屬。感應加熱過程在導體(例如金屬)內產生渦流。渦流繼而產生熱。由受熱線圈產生之磁場產生向上的力。粉末3004之每個單獨顆粒不夠重而無法克服電磁場產生的向上的力,從而導致金屬裝飾碳粉末之有害噴 出3003。圖30A2描繪了對該有害噴出的本文揭示之解決方案,亦即,藉由將粉末之許多單獨顆粒壓縮為丸粒3008。因此,作用於丸粒之重力克服磁場對粉末成分之力。如此解決了VIM處理器之磁場對粉末之作用強於重力對粉末之作用的前述問題。因此,丸粒進入坩堝並與混合物之成分一起被加熱。 As is known in the art, vacuum induction melting relies on a high power current generating source 3006 to melt metal within a vacuum environment 3002. The induction heating process generates eddies within a conductor (e.g., metal). The eddies, in turn, generate heat. The magnetic field generated by the heated coil generates an upward force. Each individual particle of powder 3004 is not heavy enough to overcome the upward force generated by the electromagnetic field, resulting in unwanted ejection 3003 of the metal decorative carbon powder. FIG. 30A2 depicts the solution disclosed herein to this unwanted ejection, namely, by compressing many individual particles of powder into pellets 3008. Thus, the gravitational force acting on the pellets overcomes the force of the magnetic field on the powder components. This solves the aforementioned problem that the magnetic field of the VIM processor has a stronger effect on the powder than gravity. Therefore, the pellets enter the crucible and are heated together with the components of the mixture.

一旦混合物達到其熔點,磁場便開始攪拌金屬合金。合金熔體-包括分散於合金熔化基體中之含碳成分-現在可倒入給定應用之組件特定的模具中。 Once the mixture reaches its melting point, a magnetic field begins to stir the metal alloy. The alloy melt - which includes the carbon-containing components dispersed in the alloy's molten matrix - can now be poured into a mold specific to the component being used for a given application.

圖31描繪了使用丸粒3108來在將丸粒3108引入VIM處理器3110期間最小化或消除材料噴出的方法。該圖被呈現來說明用於在粉末狀材料3004在VIM處理器中使用之前對粉末狀材料造粒的例示性材料處理製程。在額外方法中,可用VIM處理器3110替代或與真空電弧熔體處理設備、電子束熔爐、離子電鍍爐、電漿火焰源、冶煉爐、傳統金屬-金屬熔化爐或一般熟習此項技術者在閱讀了本揭示案之後將理解的其任何等效物及/或組件結合使用。 FIG. 31 depicts a method of using pellets 3108 to minimize or eliminate material ejection during introduction of pellets 3108 into a VIM processor 3110. The figure is presented to illustrate an exemplary material processing process for pelletizing powdered material 3004 prior to use in a VIM processor. In additional methods, the VIM processor 3110 may be used in place of or in conjunction with a vacuum arc melting apparatus, an electron beam furnace, an ion plating furnace, a plasma flame source, a smelting furnace, a conventional metal-metal melting furnace, or any equivalents and/or components thereof as would be understood by one of ordinary skill in the art after reading this disclosure.

為了獲得粉末狀材料,使供應氣體(例如,烴,諸如甲烷)流入電漿反應器中以得到含有離解碳原子及離解氫原子之電漿。在電漿羽流中之某特定位置處,諸如在氫與碳原子完全離解之處,將金屬熔體(例如鎳熔體)注入電漿中。所注入之金屬熔體與離解碳原子組合以形成金屬裝飾碳分子,該等金屬裝飾碳分子中之一些與其他金屬裝飾碳分子合併。當冷卻到所注入金屬之熔點以下的溫度時,沉澱物作為粉末狀材料3104自電漿反應器離開。 To obtain a powdered material, a supply gas (e.g., a hydrocarbon such as methane) is flowed into a plasma reactor to obtain a plasma containing dissociated carbon atoms and dissociated hydrogen atoms. A metal melt (e.g., a nickel melt) is injected into the plasma at a specific location in the plasma plume, such as where hydrogen and carbon atoms are completely dissociated. The injected metal melt combines with the dissociated carbon atoms to form metal-decorated carbon molecules, some of which merge with other metal-decorated carbon molecules. When cooled to a temperature below the melting point of the injected metal, the precipitate leaves the plasma reactor as a powdered material 3104.

在自電漿反應器收集金屬裝飾碳粉末之後(步驟3114),可能在位於電漿反應器之出口處的氣-固分離器或其他收集容器中,將金屬裝飾碳分子與離解氫分子(例如,H2)分離。例如且如所示出,如一般熟習此項技術者在閱讀了本揭示案之後將瞭解的,可使用諸如重力分離器、旋風分離器、洗滌器、靜電分離器、過濾器等設備來實施氣-固分離器容器3102。 After the metal-decorated carbon powder is collected from the plasma reactor (step 3114), the metal-decorated carbon molecules may be separated from the dissociated hydrogen molecules (e.g., H2) in a gas-solid separator or other collection container located at the outlet of the plasma reactor. For example and as shown, as will be understood by those skilled in the art after reading this disclosure, the gas-solid separator container 3102 may be implemented using equipment such as gravity separators, cyclone separators, scrubbers, electrostatic separators, filters, etc.

在所示示例中,可將金屬裝飾碳(固體)及氫分子(氣體)放置於旋風氣 -固分離器容器3102中。該特定組態使用慣性之概念來將固體(例如,金屬裝飾碳)與氣體(例如氫氣)分離。歸因於金屬裝飾碳與氫氣之間的分子量差異,較輕材料(在該情況中為氫氣)將受到在旋風氣-固分離器容器內產生之旋渦影響更多。因此,氫氣將被迫(藉由旋風作用)向上行進,因此將氣體與較重之粉末狀材料3104(例如,金屬裝飾碳分子)分離。氣-固分離器容器之形狀有助於金屬裝飾碳顆粒向下流向容器底部。該向下流與氫氣之向上流方向相反。因此,可收集金屬裝飾碳顆粒以進行進一步處理。 In the example shown, metal-decorated carbon (solid) and hydrogen molecules (gas) may be placed in a cyclonic gas-solid separator vessel 3102. This particular configuration uses the concept of inertia to separate solids (e.g., metal-decorated carbon) from gases (e.g., hydrogen). Due to the molecular weight difference between the metal-decorated carbon and the hydrogen, the lighter material (in this case, the hydrogen) will be more affected by the vortex generated within the cyclonic gas-solid separator vessel. As a result, the hydrogen will be forced (by cyclonic action) to travel upward, thus separating the gas from the heavier powdered material 3104 (e.g., metal-decorated carbon molecules). The shape of the gas-solid separator vessel helps the metal-decorated carbon particles flow downward toward the bottom of the vessel. The downward flow is in the opposite direction to the upward flow of hydrogen. Thus, the metal-decorated carbon particles can be collected for further processing.

一旦金屬裝飾碳粉末已與氫氣隔離且被捕獲,則對金屬裝飾碳進行壓縮以形成剛性主體丸粒3108(步驟3116)。該造粒可例如經由使用造粒機3106來完成,諸如自動致動或手動操作之12噸壓機。雖然該實例示出了使用12噸壓機作為造粒機3106,但在不脫離本發明之範疇的情況下,可使用熟習本揭示案之技術人員將理解為適合於產生具有足夠質量以避免自VIM處理器噴出之丸粒的任何造粒技術及/或設備。 Once the metal-decorated carbon powder has been isolated from the hydrogen and captured, the metal-decorated carbon is compressed to form rigid body pellets 3108 (step 3116). The pelletization can be accomplished, for example, by using a pelletizer 3106, such as a 12-ton press that is automatically actuated or manually operated. Although this example shows the use of a 12-ton press as the pelletizer 3106, any pelletizing technique and/or equipment that a person skilled in the art will understand as suitable for producing pellets of sufficient quality to avoid ejection from the VIM processor may be used without departing from the scope of the present invention.

金屬裝飾碳之造粒利用了金屬造粒碳與VIM之磁通量在重力下如何相互作用的力學。更具體地,重力對丸粒之影響強於磁通量。因此,當將丸粒(而非粉末)引入VIM處理器3110中時,關於材料因磁力而噴出之前述問題得以消除。 The pelletization of metal decorated carbon exploits the mechanics of how the metal pelletized carbon and the magnetic flux of the VIM interact under gravity. More specifically, gravity has a stronger effect on the pellets than the magnetic flux. Therefore, when pellets (rather than powder) are introduced into the VIM processor 3110, the previously mentioned issues regarding ejection of material due to magnetic forces are eliminated.

一旦丸粒被引入VIM處理器之坩堝中,丸粒將開始熔化並與坩堝之其他內含物混合(步驟3118)。在該步驟期間,當丸粒熔化時,其均勻地分散於金屬混合物內。為了促進均勻分散,VIM坩堝可單獨裝入丸粒,其中根據各種實施例,丸粒放在金屬粉末上,或者金屬粉末放在丸粒下面及上面。 Once the pellets are introduced into the crucible of the VIM processor, the pellets will begin to melt and mix with the other contents of the crucible (step 3118). During this step, as the pellets melt, they are evenly dispersed within the metal mixture. To promote even dispersion, the VIM crucible can be loaded with pellets alone, with the pellets placed on top of the metal powder, or with the metal powder placed below and above the pellets, according to various embodiments.

隨後可將所得熔體3112倒入模具中(步驟3120)及/或與射出成型設備結合使用以形成組件(例如,渦輪葉片、車用組件、醫療設備等)。在一些情況中,使VIM處理器之所得輸出(例如,熔體3112)冷卻並隨後使用任何合適設備 粉末化,以便與其他機械部件形成方法(例如3D打印)一起使用,且繼而在任何應用中使用(步驟3122)。 The resulting melt 3112 may then be poured into a mold (step 3120) and/or used in conjunction with injection molding equipment to form a component (e.g., a turbine blade, an automotive component, a medical device, etc.). In some cases, the resulting output of the VIM processor (e.g., melt 3112) is cooled and then powdered using any suitable equipment for use with other mechanical part forming methods (e.g., 3D printing) and then used in any application (step 3122).

圖32描繪了放入模具3202中的熔體3112。熔體3112可放入任何形狀或形式之模具3202中。一旦熔體冷卻,便可將組件自模具移除且在其既定應用中使用。 FIG. 32 depicts a melt 3112 placed into a mold 3202. The melt 3112 may be placed into a mold 3202 of any shape or form. Once the melt cools, the component may be removed from the mold and used in its intended application.

僅作為實例,可使用用於渦輪葉片之模具。隨後可將由金屬混合物及含碳成分組成之熔體放入渦輪葉片模具中並冷卻。一旦變冷且自模具移除,渦輪葉片便可在其既定應用中使用。作為另一個實例,熔體可冷卻、然後粉末化,然後封裝以用於3D列印機或其他增材製造技術/設備。 As just one example, a mold for a turbine blade may be used. A melt consisting of a metal mixture and a carbon-containing component may then be placed into the turbine blade mold and cooled. Once cooled and removed from the mold, the turbine blade may be used in its intended application. As another example, the melt may be cooled, then powdered, and then packaged for use in a 3D printer or other additive manufacturing technology/equipment.

圖33描繪了根據各種方法之丸粒處理的簡化示意圖。如上文參看圖31詳細地描述,獲得粉末狀材料3104,例如,作為來自微波電漿反應器之輸出,將其與不想要之氣體分離,且使用造粒機3106壓製成丸粒。較佳地,造粒機3106包括一模具,該模具之實體組態/佈置適合於產生具有所要幾何形狀之丸粒。如圖33所示,模具3106a經組態以產生直徑約1釐米之大體圓柱形丸粒(或「球餅」)。當然,熟習此項技術者將瞭解,可基於將用於產生所要材料之VIM處理器(或等效設備)的性質(例如,磁場強度、容積等)來選擇及/或調整丸粒之幾何特性。值得註意的係,根據圖33中呈現之實驗產生的丸粒無需化學黏結劑便能產生。 FIG. 33 depicts a simplified schematic diagram of pellet processing according to various methods. As described in detail above with reference to FIG. 31 , a powdered material 3104 is obtained, for example, as output from a microwave plasma reactor, separated from unwanted gases, and pressed into pellets using a pelletizer 3106. Preferably, the pelletizer 3106 includes a mold whose physical configuration/arrangement is suitable for producing pellets having a desired geometric shape. As shown in FIG. 33 , the mold 3106a is configured to produce generally cylindrical pellets (or "pucks") having a diameter of about 1 cm. Of course, those skilled in the art will appreciate that the geometric properties of the pellets may be selected and/or adjusted based on the properties of the VIM processor (or equivalent) that will be used to produce the desired material (e.g., magnetic field strength, volume, etc.). It is noteworthy that the pellets produced according to the experiments presented in FIG. 33 were produced without the need for a chemical binder.

如圖33中亦示出,且用實驗證明,本發明成功地產生了基本上僅由天然石墨烯(3108a)組成之丸粒,以及由金屬裝飾碳(例如裝飾石墨烯)(3108b)形成之丸粒。任一類型之丸粒皆可使用實質上相同之技術產生,唯一差別在於用於產生丸粒之粉末的組成。 As also shown in FIG. 33 , and experimentally demonstrated, the present invention successfully produces pellets consisting essentially only of natural graphene (3108a), as well as pellets formed of metal-decorated carbon (e.g., decorated graphene) (3108b). Either type of pellet can be produced using substantially the same technique, with the only difference being the composition of the powder used to produce the pellets.

在圖34示意性地呈現之另一個實驗中,丸粒(諸如丸粒3108)經由人工攪拌而分散於異丙醇溶液中。在可手動進行、使用超音波棒(或用於超音波攪 拌之其他機制)等進行的攪拌之後,如一般熟習此項技術者在閱讀了本揭示案之後將瞭解的,所得懸浮液表現出滲透性。磁試驗2驗證了鎳裝飾碳之分散。 In another experiment schematically presented in FIG. 34 , pellets (such as pellet 3108) were dispersed in an isopropyl alcohol solution by manual stirring. After stirring, which may be performed manually, using an ultrasonic wand (or other mechanism for ultrasonic stirring), etc., the resulting suspension exhibits permeability as will be appreciated by one of ordinary skill in the art after reading this disclosure. Magnetic Test 2 verified the dispersion of the nickel-decorated carbon.

發明構思 Invent ideas

已在上文參看諸圖描述了發明構思之各種實施例、態樣、特徵、優點、實施方式、組態、佈置等。應理解,除非本文中另外明確說明,否則在不脫離本揭示案之範疇的情況下,此類實施例、態樣、特徵等可以一般熟習此項技術者在閱讀了本揭示案之後將理解的任何合適方式進行組合或修改。十分清楚,以下發明構思存在於本文呈現之發明構思的較佳特性、組態等中,且可以任何合適方式、組合或排列來使用,同時仍在本發明之所揭示範疇內。 Various embodiments, aspects, features, advantages, implementations, configurations, arrangements, etc. of the invention concepts have been described above with reference to the figures. It should be understood that, unless otherwise expressly stated herein, such embodiments, aspects, features, etc. may be combined or modified in any suitable manner that a person skilled in the art would understand after reading the disclosure without departing from the scope of the disclosure. It is clear that the following invention concepts exist in the preferred characteristics, configurations, etc. of the invention concepts presented herein, and may be used in any suitable manner, combination, or arrangement while still within the disclosed scope of the invention.

根據一個態樣,一種物質組合物包含一或多個顆粒,且該等顆粒中之至少一些獨立地包含一金屬晶格,該金屬晶格具有設置於該金屬晶格中的一或多個相干的平面石墨烯層。該一或多個相干的平面石墨烯層之至少一些碳原子可設置於該金屬晶格之間隙位點中。例如,該一或多個相干的平面石墨烯層可部分地或完全地有間隙地交錯於該金屬晶格之基面之間。較佳地,該金屬晶格包含約15wt%至約90wt%碳,且該等顆粒中約15%至約60wt%碳存在於其間隙位點處。另外,在一些方法中,金屬晶格之特徵在於選自面心立方(FCC)、體心立方(BCC)及六方密積(HCC)中之晶體結構。在一些方法中,該一或多個相干的平面石墨烯層由單層石墨烯組成。替代地,該一或多個相干的平面石墨烯層包括至少五個石墨烯層,且不多於十五個石墨烯層。根據所選實施方式,該一或多個相干的平面石墨烯層各自獨立地實質上沒有缺陷。該金屬晶格可包含選自由以下各者組成之群中的一或多種金屬:鋁、銅、鐵、鎳、鈦、鉭、鎢、鉻、鉬、鈷、錳、鈮及其組合。例如,該金屬晶格可為英高鎳合金或包括英高鎳合金,且英高鎳合金可為由選自由以下各者組成之群中的一或多種金屬形成的超合金:鎳、鉻、鋁、銅、鐵、鈦、鉭、鉬、鈷、錳及鈮。此外,英高鎳合金可選 自由以下各者組成之群中:Inconel 600、Inconel 617、Inconel 625、Inconel 690、Inconel 718及Inconel X-750。該一或多個石墨烯層之至少一些碳原子較佳地共價鍵合至金屬晶格之金屬原子。更佳地,石墨烯之碳原子與金屬原子之間的共價鍵包括非極性共價鍵。同樣地,該一或多個石墨烯層之至少一些碳原子可共價鍵合至該一或多個石墨烯層之其他碳原子,且該石墨烯之碳原子之間的一些或所有共價鍵可包括非極性共價鍵。繼續參考該物質組合物內之鍵合,該一或多個顆粒可完全地或實質上不包括極性共價鍵。此外,該一或多個顆粒中之每一者的金屬晶格實質上或完全地不包括離子鍵。「實質上」不包括應被理解為係指組合物中存在之任何極性鍵、離子鍵或其他提到之類型的鍵對該物質組合物之結構、物理及功能特性不具有影響或具有可忽略不計之影響的組合物。顆粒之特徵可在於在其晶界處缺少碳聚集體及/或團聚物、直徑在約20nm至約3.5μm之範圍內、被壓製成丸粒、或此等特徵之任何組合。根據某些態樣,該物質組合物之最大可辨別特徵大小係在約0.1nm至約1μm之範圍內。該等顆粒可被壓製成丸粒。 According to one aspect, a composition of matter comprises one or more particles, and at least some of the particles independently comprise a metal lattice having one or more coherent planar graphene layers disposed in the metal lattice. At least some of the carbon atoms of the one or more coherent planar graphene layers may be disposed in interstitial sites of the metal lattice. For example, the one or more coherent planar graphene layers may be partially or completely interstitially interlaced between basal planes of the metal lattice. Preferably, the metal lattice comprises about 15 wt % to about 90 wt % carbon, and about 15 % to about 60 wt % of the carbon in the particles is present at interstitial sites thereof. Additionally, in some methods, the metal lattice is characterized by a crystal structure selected from face-centered cubic (FCC), body-centered cubic (BCC), and hexagonal close-packed (HCC). In some methods, the one or more coherent planar graphene layers consist of a single layer of graphene. Alternatively, the one or more coherent planar graphene layers include at least five graphene layers and no more than fifteen graphene layers. Depending on the selected embodiment, the one or more coherent planar graphene layers are each independently substantially defect-free. The metal lattice may include one or more metals selected from the group consisting of aluminum, copper, iron, nickel, titanium, tungsten, chromium, molybdenum, cobalt, manganese, niobium, and combinations thereof. For example, the metal lattice may be or include an Inconel nickel alloy, and the Inconel nickel alloy may be a superalloy formed from one or more metals selected from the group consisting of nickel, chromium, aluminum, copper, iron, titanium, tantalum, molybdenum, cobalt, manganese, and niobium. In addition, the Inconel nickel alloy may be selected from the group consisting of Inconel 600, Inconel 617, Inconel 625, Inconel 690, Inconel 718, and Inconel X-750. At least some of the carbon atoms of the one or more graphene layers are preferably covalently bonded to metal atoms of the metal lattice. More preferably, the covalent bonds between the carbon atoms of the graphene and the metal atoms include non-polar covalent bonds. Likewise, at least some of the carbon atoms of the one or more graphene layers may be covalently bonded to other carbon atoms of the one or more graphene layers, and some or all of the covalent bonds between the carbon atoms of the graphene may include non-polar covalent bonds. Continuing with reference to the bonding within the material composition, the one or more particles may be completely or substantially free of polar covalent bonds. In addition, the metal lattice of each of the one or more particles is substantially or completely free of ionic bonds. "Substantially" is understood to mean a composition in which any polar bonds, ionic bonds, or other mentioned types of bonds present in the composition have no effect or a negligible effect on the structural, physical and functional properties of the material composition. The particles may be characterized by lack of carbon aggregates and/or agglomerates at their grain boundaries, having a diameter in the range of about 20 nm to about 3.5 μm, being pressed into pellets, or any combination of these characteristics. According to certain aspects, the maximum discernible feature size of the composition of matter is in the range of about 0.1 nm to about 1 μm. The particles may be pressed into pellets.

在前述說明書中,已經參考本揭示案之具體實施方式描述了本揭示案。然而,顯而易見的係,在不脫離本揭示案的更廣泛之精神及範疇的情況下,可對其進行各種修改及改變。例如,以上描述之製程流程係參考製程動作之特定排序描述的。然而,所描述之製程動作中之許多製程動作的排序可在不影響本揭示案之範疇或操作的情況下進行改變。本說明書及附圖被認為係說明性意義的,而非限制性意義。 In the foregoing specification, the disclosure has been described with reference to specific implementations of the disclosure. However, it is apparent that various modifications and changes may be made thereto without departing from the broader spirit and scope of the disclosure. For example, the process flow described above is described with reference to a particular ordering of process actions. However, the ordering of many of the process actions described may be changed without affecting the scope or operation of the disclosure. This specification and accompanying drawings are to be considered in an illustrative, rather than a restrictive, sense.

Claims (15)

一種物質組合物,該物質組合物包含一或多個顆粒,其中該一或多個顆粒中之至少一些獨立地包含一金屬晶格,該金屬晶格具有設置於該金屬晶格中的一或多個相干的平面石墨烯層。A composition of matter comprises one or more particles, wherein at least some of the one or more particles independently comprise a metal lattice having one or more coherent planar graphene layers disposed in the metal lattice. 如請求項1之物質組合物,其中該一或多個相干的平面石墨烯層之至少一些碳原子設置於該金屬晶格內之間隙位點中。A composition of matter as in claim 1, wherein at least some of the carbon atoms of the one or more coherent planar graphene layers are disposed in interstitial sites within the metal lattice. 如請求項1之物質組合物,其中該一或多個相干的平面石墨烯層有間隙地交錯於該金屬晶格之基面之間。A composition of matter as in claim 1, wherein the one or more coherent planar graphene layers are interstitially interlaced between basal planes of the metal lattice. 如請求項1之物質組合物,其中該金屬晶格包含選自由以下各者組成之群中的一或多種金屬:鋁、銅、鐵、鎳、鈦、鉭、鎢、鉻、鉬、鈷、錳、鈮及其組合。The composition of matter of claim 1, wherein the metal lattice comprises one or more metals selected from the group consisting of aluminum, copper, iron, nickel, titanium, tungsten, chromium, molybdenum, cobalt, manganese, niobium, and combinations thereof. 如請求項1之物質組合物,其中該一或多個石墨烯層之至少一些碳原子共價鍵合至該金屬晶格之金屬原子;且其中該石墨烯之碳原子與該等金屬原子之間的共價鍵包括非極性共價鍵。A composition of matter as in claim 1, wherein at least some of the carbon atoms of the one or more graphene layers are covalently bonded to metal atoms of the metal lattice; and wherein the covalent bonds between the carbon atoms of the graphene and the metal atoms comprise non-polar covalent bonds. 如請求項1之物質組合物,其中該一或多個石墨烯層之至少一些碳原子共價鍵合至該一或多個石墨烯層之其他碳原子;且其中該石墨烯之該等碳原子之間的共價鍵包括非極性共價鍵。The composition of matter of claim 1, wherein at least some of the carbon atoms of the one or more graphene layers are covalently bonded to other carbon atoms of the one or more graphene layers; and wherein the covalent bonds between the carbon atoms of the graphene include non-polar covalent bonds. 如請求項1之物質組合物,其中該一或多個顆粒實質上不包括極性共價鍵。The composition of matter of claim 1, wherein the one or more particles do not substantially comprise polar covalent bonds. 如請求項1之物質組合物,其中該一或多個顆粒之該等金屬晶格實質上不包括離子鍵。The composition of matter of claim 1, wherein the metal lattices of the one or more particles do not substantially include ionic bonds. 如請求項1之物質組合物,其中該一或多個顆粒獨立地包含約15wt%碳至約90 wt%碳。The composition of matter of claim 1, wherein the one or more particles independently comprise from about 15 wt % carbon to about 90 wt % carbon. 如請求項1之物質組合物,其中該一或多個顆粒之該等金屬晶格包含在其間隙位點處的約15 wt%至約60 wt%碳。The composition of matter of claim 1, wherein the metal lattices of the one or more particles comprise from about 15 wt % to about 60 wt % carbon at interstitial sites thereof. 如請求項2之物質組合物,其中該些碳原子實質上均勻地分散於該金屬晶格中。A material composition as claimed in claim 2, wherein the carbon atoms are substantially uniformly dispersed in the metal lattice. 如請求項1之物質組合物,其中該金屬晶格之晶界實質上無碳聚集體及/或團聚物。A composition of matter as claimed in claim 1, wherein the grain boundaries of the metal lattice are substantially free of carbon aggregates and/or agglomerates. 如請求項1之物質組合物,其中每一顆粒之特徵在於在其晶界處缺少碳聚集體及/或團聚物。A composition of matter as in claim 1, wherein each particle is characterized by a lack of carbon aggregates and/or agglomerates at its grain boundaries. 一種物質組合物,該物質組合物包含:一英高鎳合金,該英高鎳合金具有設置於該英高鎳合金之一金屬晶格中的石墨烯。A composition of matter includes: an inconel nickel alloy having graphene disposed in a metal lattice of the inconel nickel alloy. 一種物質組合物,該物質組合物包含一金屬晶格,該金屬晶格具有設置於該金屬晶格中的至少約15 wt%碳,其中該金屬晶格包括選自由以下各者組成之群中的一金屬:鐵、鎢、鉻、鉬、鈷、錳、鈮及其組合。A composition of matter comprises a metal lattice having at least about 15 wt % carbon disposed therein, wherein the metal lattice comprises a metal selected from the group consisting of iron, tungsten, chromium, molybdenum, cobalt, manganese, niobia, and combinations thereof.
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