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TWI885888B - Helium gas purification device and method for purifying helium gas - Google Patents

Helium gas purification device and method for purifying helium gas Download PDF

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TWI885888B
TWI885888B TW113116415A TW113116415A TWI885888B TW I885888 B TWI885888 B TW I885888B TW 113116415 A TW113116415 A TW 113116415A TW 113116415 A TW113116415 A TW 113116415A TW I885888 B TWI885888 B TW I885888B
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helium
temperature
raw material
impurity
purified
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TW202544391A (en
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莊秉勳
蔡黃修
蕭豐礽
李興傑
廖文榮
邱文崧
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財團法人國家同步輻射研究中心
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Abstract

A helium gas purification device, including: an inlet for receiving helium gas raw materials; a first cooling unit configured to reduce the temperature of the helium gas raw material to a first temperature; a second cooling unit configured to receive the helium gas raw material cooled having the first temperature and reduce the temperature of the helium gas raw material having the first temperature to a second temperature; an impurity separation unit configured to receive the helium gas raw material having the second temperature and removing a first impurity from the helium gas raw material having the second temperature, wherein the freezing point of the first impurity is not lower than the second temperature; an impurity adsorption unit configured to receive the helium gas raw material which the first impurity has been separated, and configured to adsorb a second impurity in the helium gas raw material to obtain purified helium gas; and an outlet configured to output the purified helium gas.

Description

氦氣純化裝置及純化氦氣之方法Helium purification device and method for purifying helium

本發明係關於純化裝置及純化方法,更具體而言,是關於氦氣純化裝置及純化氦氣之方法。The present invention relates to a purification device and a purification method, and more specifically, to a helium purification device and a method for purifying helium.

氦氣屬於稀缺且高成本的消耗性資源,其廣泛運用横跨醫學、能源和太空研究等眾多領域,每年的消耗率更以約10%的速度不斷攀升。在眾多設施中,液態氦被廣泛應用於大型設備的超低溫冷卻,包括超導磁鐵、超導射頻共振腔體、以及MRI等。然而,使用完之液態氦經相變氣化後可能攜帶諸如濕氣、氧氣、油和氮等雜質,這些雜質的冰點高於液態氦並可能結晶凝固。凝固的雜質對於氦氣回收再製之液態氦製造系統及使用液態氦的低溫系統而言,將直接影響裝置的性能和運行狀態,包括改變流動特性、損害低溫系統中的冷箱或運動部件(如渦輪等),進而降低整體運行效率。因此,確實清除雜質對於延長低溫系統的使用壽命至為關鍵。Helium is a scarce and high-cost consumable resource. It is widely used in many fields such as medicine, energy and space research, and its annual consumption rate continues to rise at a rate of about 10%. In many facilities, liquid helium is widely used for ultra-low temperature cooling of large equipment, including superconducting magnets, superconducting radio frequency resonance cavities, and MRI. However, after the used liquid helium is vaporized through phase change, it may carry impurities such as moisture, oxygen, oil and nitrogen. The freezing point of these impurities is higher than that of liquid helium and may crystallize and solidify. Solidified impurities will directly affect the performance and operation of the liquid helium manufacturing system for helium recovery and re-production and the cryogenic system using liquid helium, including changing the flow characteristics, damaging the cold box or moving parts (such as turbines, etc.) in the cryogenic system, and thus reducing the overall operating efficiency. Therefore, it is critical to effectively remove impurities to extend the service life of the cryogenic system.

傳統氦氣純化方法的一個問題在於去除微量雜質方面的低效率,因此,氦氣純化裝置及純化氦氣之方法需要進一步改良,以更高的純化效率、低損耗的方式獲得經純化的氦氣,以支援液態氦的廣泛應用。One problem with traditional helium purification methods is the low efficiency in removing trace impurities. Therefore, helium purification devices and methods for purifying helium need to be further improved to obtain purified helium with higher purification efficiency and low loss to support the widespread application of liquid helium.

本發明的實施例涉及一種氦氣純化裝置。所述氦氣純化裝置包括:一入口,用以接收一氦氣;一第一降溫單元,其設置為將該氦氣的溫度降至一第一溫度;一第二降溫單元,其設置為接收降溫至該第一溫度之該氦氣,並將具有該第一溫度之該氦氣的溫度降至一第二溫度;一雜質分離單元,其設置為接收降溫至該第二溫度之該氦氣,並將具有該第二溫度之該氦氣中的一第一雜質分離出,其中該第一雜質的冰點不低於該第二溫度;一雜質吸附單元,其設置為接收經分離該第一雜質之該氦氣,並用以吸附該氦氣中的一第二雜質,以取得一經純化氦氣;以及一出口,用以輸出該經純化氦氣。An embodiment of the present invention relates to a helium purification device. The helium purification device includes: an inlet for receiving helium; a first cooling unit, which is configured to reduce the temperature of the helium to a first temperature; a second cooling unit, which is configured to receive the helium cooled to the first temperature and reduce the temperature of the helium having the first temperature to a second temperature; an impurity separation unit, which is configured to receive the helium cooled to the second temperature and separate a first impurity from the helium having the second temperature, wherein the freezing point of the first impurity is not lower than the second temperature; an impurity adsorption unit, which is configured to receive the helium from which the first impurity is separated and adsorb a second impurity in the helium to obtain purified helium; and an outlet, which is configured to output the purified helium.

本發明的實施例涉及一種純化氦氣之方法。所述方法包括:接收一氦氣原料;將該氦氣原料的溫度降至一第一溫度;將水自降溫至該第一溫度之該氦氣原料分離出;將該具有該第一溫度之該氦氣原料的溫度降至一第二溫度;將一第一雜質自具有該第二溫度之該氦氣原料分離出,其中該第一雜質的冰點高於該第二溫度;將一第二雜質自具有該第二溫度且已分離出該第一雜質之該氦氣原料吸附出,以取得一經純化氦氣;以及升溫該經純化氦氣。An embodiment of the present invention relates to a method for purifying helium. The method includes: receiving a helium raw material; lowering the temperature of the helium raw material to a first temperature; separating water from the helium raw material cooled to the first temperature; lowering the temperature of the helium raw material having the first temperature to a second temperature; separating a first impurity from the helium raw material having the second temperature, wherein the freezing point of the first impurity is higher than the second temperature; adsorbing a second impurity from the helium raw material having the second temperature and from which the first impurity has been separated to obtain purified helium; and raising the temperature of the purified helium.

以下揭露內容提供用於實施本發明之不同特徵之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本發明。當然,此等僅為實例且不旨在限制。舉例而言,在下列描述中,第一構件形成於第二構件上方或第一構件形成於第二構件之上,可包含該第一構件及該第二構件直接接觸之實施例,且亦可包含額外構件形成在該第一構件與該第二構件之間之實施例,使該第一構件及該第二構件可不直接接觸之實施例。另外,本揭露可在各種實例中重複元件符號及/或字母。此重複出於簡化及清楚之目的,且本身不代表所論述之各項實施例及/或組態之間的關係。The following disclosure provides many different embodiments or examples for implementing the different features of the present invention. Specific examples of components and configurations are described below to simplify the present invention. Of course, these are only examples and are not intended to be limiting. For example, in the following description, a first component is formed above a second component or a first component is formed on a second component, which may include an embodiment in which the first component and the second component are in direct contact, and may also include an embodiment in which an additional component is formed between the first component and the second component, so that the first component and the second component may not be in direct contact. In addition, the present disclosure may repeat component symbols and/or letters in various examples. This repetition is for the purpose of simplification and clarity, and does not itself represent the relationship between the various embodiments and/or configurations discussed.

此外,為便於描述,可在本文中使用諸如「在…下面」、「在…下方」、「下」、「在…上方」、「上」及類似者之空間相對術語來描述一個元件或構件與另一(些)元件或構件之關係,如圖中繪示。空間相對術語旨在涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。該裝置可以有其他定向(旋轉90度或按其他定向),同樣可以相應地用來解釋本文中使用之空間相對描述詞。Additionally, for ease of description, spatially relative terms such as "below," "beneath," "down," "above," "upper," and the like may be used herein to describe the relationship of one element or component to another element or components as depicted in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be in other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be interpreted accordingly.

如本文中所使用諸如「第一」、「第二」、和「第三」等用語說明各種元件、部件、區域、層、和/或區段,這些元件、部件、區域、層、和/或區段不應受到這些用語限制。這些用語可能僅係用於區別一個元件、部件、區域、層、或區段與另一個。當文中使用「第一」、「第二」、和「第三」等用語時,並非意味著順序或次序,除非由該上下文明確所指出。As used herein, terms such as "first," "second," and "third" describe various elements, components, regions, layers, and/or sections, these elements, components, regions, layers, and/or sections should not be limited by these terms. These terms may only be used to distinguish one element, component, region, layer, or section from another. When used herein, the terms "first," "second," and "third" do not imply a sequence or order unless clearly indicated by the context.

本發明係提供一種氦氣純化裝置及純化氦氣之方法。在一些實施例中,本發明的氦氣純化裝置係通過物理方式純化氦氣,且可在短時間內快速純化大量氦氣,有利於支援氦氣的廣泛應用。The present invention provides a helium purification device and a method for purifying helium. In some embodiments, the helium purification device of the present invention purifies helium by physical means and can quickly purify a large amount of helium in a short time, which is beneficial to support the wide application of helium.

圖1所示是根據本發明的某些實施例的氦氣純化裝置100的示意圖。參見圖1,本發明氦氣純化裝置100包括入口110、第一降溫單元121、第一升溫單元122、第二降溫單元150、雜質分離單元160、雜質吸附單元170,以及出口180。在一些實施例中,氦氣純化裝置100還包括外殼體101、殼管式熱交換器130及液態氮儲存桶140。FIG1 is a schematic diagram of a helium purification device 100 according to some embodiments of the present invention. Referring to FIG1 , the helium purification device 100 of the present invention includes an inlet 110, a first cooling unit 121, a first heating unit 122, a second cooling unit 150, an impurity separation unit 160, an impurity adsorption unit 170, and an outlet 180. In some embodiments, the helium purification device 100 further includes an outer shell 101, a shell-and-tube heat exchanger 130, and a liquid nitrogen storage tank 140.

在一些實施例中,外殼體101用於容置第一降溫單元121、第一升溫單元122、殼管式熱交換器130、液態氮儲存桶140、第二降溫單元150、雜質分離單元160,以及雜質吸附單元170。在一些實施例中,入口110用於接收氦氣原料200進入氦氣純化裝置100的外殼體101,出口180用於將經純化氦氣300輸出氦氣純化裝置100的外殼體101。在一些實施例中,外殼體101內的壓力介於約0.00001 bar至約0.01 bar。In some embodiments, the housing 101 is used to accommodate the first cooling unit 121, the first heating unit 122, the shell-and-tube heat exchanger 130, the liquid nitrogen storage tank 140, the second cooling unit 150, the impurity separation unit 160, and the impurity adsorption unit 170. In some embodiments, the inlet 110 is used to receive the helium raw material 200 into the housing 101 of the helium purification device 100, and the outlet 180 is used to output the purified helium 300 out of the housing 101 of the helium purification device 100. In some embodiments, the pressure in the housing 101 is between about 0.00001 bar and about 0.01 bar.

在一些實施例中,第一流體導管111位於外殼體101中且經配置以連通入口110與第一降溫單元121。第一流體導管111用於使氦氣原料200由外殼體101之外進入氦氣純化裝置100的外殼體101中,並經由第一流體導管111傳送至第一降溫單元121。在一些實施例中,氦氣純化裝置100還包含壓縮機102,壓縮機102用於提升氦氣原料200內壓力並配置成與第一流體導管111連通,以促進氦氣原料200進入氦氣純化裝置100。氦氣原料200的壓力可被壓縮機102自非運作狀態的1.013 bar提升至約3 bar至約160 bar。In some embodiments, the first fluid conduit 111 is located in the housing 101 and is configured to communicate the inlet 110 and the first cooling unit 121. The first fluid conduit 111 is used to allow the helium raw material 200 to enter the housing 101 of the helium purification device 100 from outside the housing 101, and is transferred to the first cooling unit 121 through the first fluid conduit 111. In some embodiments, the helium purification device 100 further includes a compressor 102, which is used to increase the internal pressure of the helium raw material 200 and is configured to communicate with the first fluid conduit 111 to facilitate the helium raw material 200 to enter the helium purification device 100. The pressure of the helium feedstock 200 may be increased by the compressor 102 from 1.013 bar in a non-operating state to a pressure of about 3 bar to about 160 bar.

在一些實施例中,自入口110進入氦氣純化裝置100的氦氣原料200包含第一雜質及第二雜質。第一雜質的冰點不低於77K,可例如但不限於微粒、冰晶、二氧化碳、水。第二雜質係選自於由氮氣、氧氣、碳氫化合物(C xH y)及油汙染物所組成之群組其中至少之一者。在一些實施例中,第一雜質和第二雜質實質上將會在氦氣純化裝置100內的不同處理階段被移除。 In some embodiments, the helium raw material 200 entering the helium purification device 100 from the inlet 110 includes a first impurity and a second impurity. The first impurity has a freezing point not lower than 77K and may be, for example but not limited to, particles, ice crystals, carbon dioxide, and water. The second impurity is at least one selected from the group consisting of nitrogen, oxygen, hydrocarbons ( CxHy ), and oil contaminants. In some embodiments , the first impurity and the second impurity will be substantially removed at different processing stages in the helium purification device 100.

圖2所示是根據本發明的某些實施例的管套管式熱交換器(coaxial pipe counterflow heat exchanger,又稱為同軸管逆流熱交換器tube in tube heat exchanger)120的示意圖。圖3所示是根據本發明的某些實施例的管套管式熱交換器120的透視圖。在一些實施例中,參見圖1、圖2及圖3,氦氣純化裝置100中的第一降溫單元121及第一升溫單元122係結合於管套管式熱交換器120中。管套管式熱交換器120係用以將氦氣原料200以及經純化氦氣300進行第一熱交換。FIG. 2 is a schematic diagram of a coaxial pipe counterflow heat exchanger 120 according to some embodiments of the present invention. FIG. 3 is a perspective view of a tube-in-tube heat exchanger 120 according to some embodiments of the present invention. In some embodiments, referring to FIG. 1 , FIG. 2 and FIG. 3 , the first cooling unit 121 and the first heating unit 122 in the helium purification device 100 are combined in the tube-in-tube heat exchanger 120. The tube-in-tube heat exchanger 120 is used to perform a first heat exchange between the helium raw material 200 and the purified helium 300.

詳言之,第一降溫單元121設置為將氦氣原料200的溫度降至第一溫度。在一些實施例中,第一溫度不超過約120K。在一些實施例中,第一溫度為約120K至約80K。依據待純化之氦氣原料200的來源不同,其初始溫度可能有所差異,在一些例子中,氦氣原料200的溫度是由200K以上降至第一溫度,而在另一些例子中,氦氣原料200的溫度是由300K以上降至第一溫度。在一些實施例中,第一降溫單元121配置成接收氦氣原料200,第一升溫單元122配置成接收經純化氦氣300,兩者被整合至管套管式熱交換器120當中,以使兩者進行第一熱交換,使在引入待純化之氦氣原料200至氦氣純化裝置100當中的方向上,氦氣原料200的溫度會在此降至第一溫度。In detail, the first cooling unit 121 is configured to reduce the temperature of the helium raw material 200 to a first temperature. In some embodiments, the first temperature is no more than about 120K. In some embodiments, the first temperature is about 120K to about 80K. Depending on the source of the helium raw material 200 to be purified, its initial temperature may vary. In some examples, the temperature of the helium raw material 200 is reduced from more than 200K to the first temperature, while in other examples, the temperature of the helium raw material 200 is reduced from more than 300K to the first temperature. In some embodiments, the first cooling unit 121 is configured to receive the helium raw material 200, and the first heating unit 122 is configured to receive the purified helium 300. The two are integrated into the tube-in-tube heat exchanger 120 so that the two can perform a first heat exchange, so that in the direction of introducing the helium raw material 200 to be purified into the helium purification device 100, the temperature of the helium raw material 200 will be reduced to the first temperature.

在一些實施例中,管套管式熱交換器120包含兩根同軸管,其中一根為內管,另一根為外管,內管位於外管中,外管套在內管之外。通過管套管的配置,在第一降溫單元121中流動的氦氣原料200會與在第一升溫單元122中流動的經純化氦氣300進行前述的第一熱交換。In some embodiments, the tube-in-tube heat exchanger 120 includes two coaxial tubes, one of which is an inner tube and the other is an outer tube, wherein the inner tube is located in the outer tube and the outer tube is sleeved outside the inner tube. Through the tube-in-tube configuration, the helium raw material 200 flowing in the first cooling unit 121 will perform the aforementioned first heat exchange with the purified helium 300 flowing in the first heating unit 122.

在一些實施例中,第一降溫單元121配置為使氦氣原料200進入內管並藉由壓縮機102推動流動,第一升溫單元122配置為使經純化氦氣300進入內管及外管之間的環形空間並沿第二方向X2流動,第一方向X1與第二方向X2相反。在一些實施例中,第一降溫單元121配置為使氦氣原料200進入內管及外管之間的環形空間並沿第一方向X1流動,第一升溫單元122配置為使經純化氦氣300進入內管並沿第二方向X2流動,意即,本發明一些實施例在待純化的氦氣原料200進入氦氣純化裝置100後,會對待純化的氦氣原料200施以降溫之處理,而經純化氦氣300在離開氦氣純化裝置100前,會對經純化氦氣300施以升溫之處理,而所述降溫/升溫之處理,則以管套管式熱交換器120之管套管的配置來實現。在一些實施例中,兩根同軸管為螺旋狀,第一方向X1為順時鐘方向或逆時鐘方向,第二方向X2對應的為逆時鐘方向或順時鐘方向,以使第一方向X1與第二方向X2相反。在一些實施例中,為增強換熱效率,每根同軸管的長度是大於1公尺。In some embodiments, the first cooling unit 121 is configured to allow the helium raw material 200 to enter the inner tube and flow through the compressor 102, and the first heating unit 122 is configured to allow the purified helium 300 to enter the annular space between the inner tube and the outer tube and flow along the second direction X2. The first direction X1 is opposite to the second direction X2. In some embodiments, the first cooling unit 121 is configured to allow the helium raw material 200 to enter the annular space between the inner tube and the outer tube and flow along the first direction X1, and the first heating unit 122 is configured to allow the purified helium 300 to enter the inner tube and flow along the second direction X2. That is, in some embodiments of the present invention, after the helium raw material 200 to be purified enters the helium purification device 100, the helium raw material 200 to be purified will be subjected to a cooling treatment, and before the purified helium 300 leaves the helium purification device 100, the purified helium 300 will be subjected to a heating treatment, and the cooling/heating treatment is achieved by the tube-in-tube configuration of the tube-in-tube heat exchanger 120. In some embodiments, the two coaxial tubes are spiral, the first direction X1 is clockwise or counterclockwise, and the second direction X2 is counterclockwise or clockwise, so that the first direction X1 is opposite to the second direction X2. In some embodiments, to enhance heat exchange efficiency, the length of each coaxial tube is greater than 1 meter.

在一些實施例中,第二流體導管112位於外殼體101中且經配置以連通第一降溫單元121與殼管式熱交換器130。第二流體導管112用於自第一降溫單元121接收具有第一溫度之氦氣原料200,並經由第二流體導管112傳送至殼管式熱交換器130。在一些實施例中,殼管式熱交換器130設置於第一降溫單元121以及第二降溫單元150間。In some embodiments, the second fluid conduit 112 is located in the housing 101 and is configured to communicate the first cooling unit 121 and the shell-tube heat exchanger 130. The second fluid conduit 112 is used to receive the helium raw material 200 having a first temperature from the first cooling unit 121 and transmit it to the shell-tube heat exchanger 130 through the second fluid conduit 112. In some embodiments, the shell-tube heat exchanger 130 is disposed between the first cooling unit 121 and the second cooling unit 150.

圖4所示是根據本發明的某些實施例的殼管式熱交換器(vassel and tube heat exchanger)130的示意圖。在一些實施例中,參見圖1及圖4,殼管式熱交換器130係用以將具有第一溫度之氦氣原料200與經純化氦氣300進行第二熱交換。殼管式熱交換器130包括外套殼131以及內管路132。內管路132容置於外套殼131中,且內管路132與外套殼131之內壁131a間具有流動空間133。內管路132係與雜質吸附單元170相連接,以接收經純化氦氣300,流動空間133連通第二流體導管112及第一降溫單元121,用以容置具有第一溫度之氦氣原料200。在一些實施例中,內管路132是螺旋狀的,用以增加具有第一溫度之氦氣原料200與內管路132之外表面132a的接觸面積。在一些實施例中,進行第二熱交換時,具有第一溫度之氦氣原料200的水氣會冷凝或附著於內管路132及外套殼131之內壁131a。在一些實施例中,殼管式熱交換器130配置成將具有第一溫度之氦氣原料200中的水去除。因此,相較於前述之管套管式熱交換器120,殼管式熱交換器130之設置目的有所不同,前述之管套管式熱交換器120之主要目的在於溫度之調整,而殼管式熱交換器130之主要目的在於配合殼管式熱交換器130的結構設計,利用溫度較低之經純化氦氣300來協助移除氦氣原料200中的水。FIG. 4 is a schematic diagram of a vassel and tube heat exchanger 130 according to some embodiments of the present invention. In some embodiments, referring to FIG. 1 and FIG. 4 , the vassel and tube heat exchanger 130 is used to perform a second heat exchange between a helium raw material 200 having a first temperature and a purified helium 300. The vassel and tube heat exchanger 130 includes an outer shell 131 and an inner pipe 132. The inner pipe 132 is accommodated in the outer shell 131, and a flow space 133 is provided between the inner pipe 132 and an inner wall 131a of the outer shell 131. The inner pipe 132 is connected to the impurity adsorption unit 170 to receive the purified helium 300, and the flow space 133 is connected to the second fluid conduit 112 and the first cooling unit 121 to accommodate the helium raw material 200 having a first temperature. In some embodiments, the inner pipe 132 is spiral to increase the contact area between the helium raw material 200 having a first temperature and the outer surface 132a of the inner pipe 132. In some embodiments, when the second heat exchange is performed, the water vapor of the helium raw material 200 having a first temperature will condense or adhere to the inner pipe 132 and the inner wall 131a of the outer shell 131. In some embodiments, the shell-and-tube heat exchanger 130 is configured to remove water from the helium raw material 200 having a first temperature. Therefore, compared with the aforementioned tube-in-tube heat exchanger 120, the purpose of the shell-and-tube heat exchanger 130 is different. The main purpose of the aforementioned tube-in-tube heat exchanger 120 is to adjust the temperature, while the main purpose of the shell-and-tube heat exchanger 130 is to cooperate with the structural design of the shell-and-tube heat exchanger 130 and use the purified helium 300 with a lower temperature to assist in removing water from the helium raw material 200.

在一些實施例中,第三流體導管113位於外殼體101中且經配置以連通殼管式熱交換器130與第二降溫單元150。第三流體導管113用於自殼管式熱交換器130的外套殼131中接收具有第一溫度之氦氣原料200,並將具有第一溫度之氦氣原料200傳送至第二降溫單元150。In some embodiments, the third fluid conduit 113 is located in the outer shell 101 and is configured to connect the shell-and-tube heat exchanger 130 and the second cooling unit 150. The third fluid conduit 113 is used to receive the helium raw material 200 having a first temperature from the outer shell 131 of the shell-and-tube heat exchanger 130 and transfer the helium raw material 200 having the first temperature to the second cooling unit 150.

在一些實施例中,第二降溫單元150、雜質分離單元160以及雜質吸附單元170是於第二溫度或第二溫度以下工作。在一些實施例中,第二溫度為不超過約80K。在一些實施例中,第二溫度為不超過約77K。In some embodiments, the second cooling unit 150, the impurity separation unit 160, and the impurity adsorption unit 170 operate at or below the second temperature. In some embodiments, the second temperature is not more than about 80K. In some embodiments, the second temperature is not more than about 77K.

圖5所示是根據本發明的某些實施例的氦氣純化裝置100的立體示意圖。在一些實施例中,參見圖1及圖5,第二降溫單元150、雜質分離單元160以及雜質吸附單元170係設置於液態氮儲存桶140中而浸泡於液態氮141。在一些實施例中,液態氮儲存桶140用於容置液態氮141,且用於使第二降溫單元150、雜質分離單元160以及雜質吸附單元170於工作狀態時浸泡於液態氮141中。在一些實施例中,第二降溫單元150、雜質分離單元160以及雜質吸附單元170於工作狀態時是完全浸泡於液態氮141中。在一些實施例中,液態氮儲存桶140具有多層隔熱膜142,外殼體101與多層隔熱膜142之間包含至少一中空空間143。相較於傳統隔熱系統,設有多層隔熱膜142的液態氮儲存桶140可以降低三個數量級的熱通量,使液態氮141的消耗量大幅降低。在一些實施例中,液態氮儲存桶140中的液態氮141靜態熱損為55W,液態氮141消耗量為1.25公升/小時。在一些實施例中,第三流體導管113將具有第一溫度之氦氣原料200輸送至位於液態氮儲存桶140中的第二降溫單元150。FIG5 is a three-dimensional schematic diagram of a helium purification device 100 according to some embodiments of the present invention. In some embodiments, referring to FIG1 and FIG5, the second cooling unit 150, the impurity separation unit 160, and the impurity adsorption unit 170 are disposed in a liquid nitrogen storage tank 140 and immersed in liquid nitrogen 141. In some embodiments, the liquid nitrogen storage tank 140 is used to contain liquid nitrogen 141, and is used to allow the second cooling unit 150, the impurity separation unit 160, and the impurity adsorption unit 170 to be immersed in liquid nitrogen 141 when in a working state. In some embodiments, the second cooling unit 150, the impurity separation unit 160, and the impurity adsorption unit 170 are completely immersed in liquid nitrogen 141 when in a working state. In some embodiments, the liquid nitrogen storage barrel 140 has a multi-layer thermal insulation film 142, and at least one hollow space 143 is included between the outer shell 101 and the multi-layer thermal insulation film 142. Compared with the traditional thermal insulation system, the liquid nitrogen storage barrel 140 with a multi-layer thermal insulation film 142 can reduce the heat flux by three orders of magnitude, so that the consumption of liquid nitrogen 141 is greatly reduced. In some embodiments, the static heat loss of the liquid nitrogen 141 in the liquid nitrogen storage barrel 140 is 55W, and the consumption of liquid nitrogen 141 is 1.25 liters/hour. In some embodiments, the third fluid conduit 113 transports the helium raw material 200 having a first temperature to the second cooling unit 150 located in the liquid nitrogen storage barrel 140.

在一些實施例中,液位感測器144設置於液態氮儲存桶140中,用於檢測或測量液態氮儲存桶140中液態氮141的液位及液料量。在一些實施例中,液態氮儲存桶140中設置有複數個液位感測器144,可例如但不限於將複數個液位感測器144分散的設置在液態氮儲存桶140中的各處。在一些實施例中,複數個液位感測器144沿重力方向Z排列於液態氮儲存桶140的頂部及底部之間。In some embodiments, the liquid level sensor 144 is disposed in the liquid nitrogen storage tank 140 to detect or measure the liquid level and liquid volume of the liquid nitrogen 141 in the liquid nitrogen storage tank 140. In some embodiments, a plurality of liquid level sensors 144 are disposed in the liquid nitrogen storage tank 140, and the plurality of liquid level sensors 144 may be dispersedly disposed in various locations in the liquid nitrogen storage tank 140, for example but not limited to. In some embodiments, the plurality of liquid level sensors 144 are arranged between the top and the bottom of the liquid nitrogen storage tank 140 along the gravity direction Z.

圖6所示是根據本發明的某些實施例的第二降溫單元150的示意圖。在一些實施例中,參見圖1及圖6,第二降溫單元150設置為接收降溫至第一溫度之氦氣原料200,並將具有第一溫度之氦氣原料200的溫度降至第二溫度,形成降溫至第二溫度之氦氣原料200。在一些實施例中,第一雜質會於第二溫度的環境中遇冷凝結,因此降溫至第二溫度之氦氣原料200可包含經凝結的第一雜質。FIG6 is a schematic diagram of a second cooling unit 150 according to some embodiments of the present invention. In some embodiments, referring to FIG1 and FIG6, the second cooling unit 150 is configured to receive the helium raw material 200 cooled to a first temperature, and reduce the temperature of the helium raw material 200 having the first temperature to a second temperature to form the helium raw material 200 cooled to the second temperature. In some embodiments, the first impurity will condense when cooled in an environment of the second temperature, so the helium raw material 200 cooled to the second temperature may include the condensed first impurity.

在一些實施例中,第二降溫單元150是一種預冷卻器(precooler)。在一些實施例中,預冷卻器包含螺旋盤捲的管路。在一些實施例中,第二降溫單元150的螺旋盤捲的管路完全浸泡於液態氮141中。In some embodiments, the second cooling unit 150 is a precooler. In some embodiments, the precooler includes a spirally wound pipeline. In some embodiments, the spirally wound pipeline of the second cooling unit 150 is completely immersed in liquid nitrogen 141.

在一些實施例中,第四流體導管114位於液態氮儲存桶140中且經配置以連通第二降溫單元150與雜質分離單元160。第四流體導管114用於自第二降溫單元150接收具有第二溫度之氦氣原料200,並將具有第二溫度之氦氣原料200輸送至雜質分離單元160。In some embodiments, the fourth fluid conduit 114 is located in the liquid nitrogen storage tank 140 and is configured to communicate the second cooling unit 150 and the impurity separation unit 160. The fourth fluid conduit 114 is used to receive the helium raw material 200 having the second temperature from the second cooling unit 150 and transport the helium raw material 200 having the second temperature to the impurity separation unit 160.

在一些實施例中,雜質分離單元160設置為接收降溫至第二溫度之氦氣原料200,並將具有第二溫度之氦氣原料200中的第一雜質分離出來。在一些實施例中,雜質分離單元160通過物理方法將具有第二溫度之氦氣原料200中的第一雜質分離出來。在一些實施例中,雜質分離單元160包括相分離器161以及過濾器162。在一些實施例中,第四流體導管114用於將具有第二溫度之氦氣原料200輸送至雜質分離單元160。在一些實施例中,第四流體導管114用於將具有第二溫度之氦氣原料200輸送至相分離器161。In some embodiments, the impurity separation unit 160 is configured to receive the helium raw material 200 cooled to the second temperature and separate the first impurity from the helium raw material 200 having the second temperature. In some embodiments, the impurity separation unit 160 separates the first impurity from the helium raw material 200 having the second temperature by a physical method. In some embodiments, the impurity separation unit 160 includes a phase separator 161 and a filter 162. In some embodiments, the fourth fluid conduit 114 is used to transport the helium raw material 200 having the second temperature to the impurity separation unit 160. In some embodiments, the fourth fluid conduit 114 is used to transport the helium raw material 200 having the second temperature to the phase separator 161.

圖7所示是根據本發明的某些實施例的相分離器161的示意圖。在一些實施例中,參見圖1及圖7,相分離器161設置為利用螺旋氣流163將第一雜質自具有第二溫度之氦氣原料200分離出來。在一些實施例中,相分離器161定義沿重力方向Z延伸的狹長空間164,且在狹長空間164中建立高速旋轉的螺旋氣流163。螺旋氣流163用於帶著具有第二溫度之氦氣原料200繞狹長空間164的中心軸線C呈螺旋狀高速旋轉。在一些實施例中,螺旋氣流163用於帶著具有第二溫度之氦氣原料200從狹長空間164的頂部開始進入相分離器161中,高速旋轉的同時往沿重力方向Z移動至狹長空間164的底部,然後沿中心軸線C由狹長空間164的底部流至頂部,並流出狹長空間164。相較於具有第二溫度之氦氣原料200的慣性,第一雜質,特別是經凝結的第一雜質或是包含第一雜質的微粒,由於體積及/或密度較大導致慣性較大。當螺旋氣流163帶著具有第二溫度之氦氣原料200繞狹長空間164的中心軸線C高速旋轉,慣性較大的經凝結的第一雜質或是包含第一雜質的微粒,難以跟隨螺旋氣流163的狹窄曲線移動,甚至因此撞擊外侧壁而落到狹長空間164底部,進而無法流出狹長空間164,從而自具有第二溫度之氦氣原料200被移除。FIG7 is a schematic diagram of a phase separator 161 according to some embodiments of the present invention. In some embodiments, referring to FIG1 and FIG7, the phase separator 161 is configured to separate the first impurity from the helium raw material 200 having the second temperature by using a spiral gas flow 163. In some embodiments, the phase separator 161 defines a narrow space 164 extending along the gravity direction Z, and a high-speed rotating spiral gas flow 163 is established in the narrow space 164. The spiral gas flow 163 is used to carry the helium raw material 200 having the second temperature to rotate in a spiral shape at a high speed around the central axis C of the narrow space 164. In some embodiments, the spiral gas flow 163 is used to carry the helium raw material 200 having the second temperature into the phase separator 161 from the top of the narrow space 164, and moves to the bottom of the narrow space 164 along the gravity direction Z while rotating at a high speed, and then flows from the bottom to the top of the narrow space 164 along the central axis C, and flows out of the narrow space 164. Compared with the inertia of the helium raw material 200 having the second temperature, the first impurities, especially the condensed first impurities or the particles containing the first impurities, have a larger inertia due to their larger volume and/or density. When the spiral gas flow 163 carries the helium raw material 200 having the second temperature and rotates at a high speed around the central axis C of the narrow space 164, the condensed first impurities or particles containing the first impurities having a larger inertia are difficult to move along the narrow curve of the spiral gas flow 163, and may even hit the outer wall and fall to the bottom of the narrow space 164, and thus cannot flow out of the narrow space 164, and are thus removed from the helium raw material 200 having the second temperature.

在一些實施例中,第五流體導管115位於液態氮儲存桶140中且經配置以連通相分離器161與過濾器162。第五流體導管115用於自相分離器161接收具有第二溫度之氦氣原料200,並將具有第二溫度之氦氣原料200輸送至過濾器162。在一些實施例中,第五流體導管115配置於雜質分離單元160中。In some embodiments, the fifth fluid conduit 115 is located in the liquid nitrogen storage tank 140 and is configured to communicate the phase separator 161 and the filter 162. The fifth fluid conduit 115 is used to receive the helium raw material 200 having the second temperature from the phase separator 161 and transport the helium raw material 200 having the second temperature to the filter 162. In some embodiments, the fifth fluid conduit 115 is configured in the impurity separation unit 160.

圖8所示是根據本發明的某些實施例的過濾器162的示意圖。在一些實施例中,參見圖1及圖8,過濾器162設置為將冰晶及二氧化碳(具有第二溫度之二氧化碳為固體)自氦氣原料200分離出。在一些實施例中,過濾器162包括濾網或濾芯165,可例如但不限於單層以上的40目不銹鋼絲布卷。過濾器162的長度可為10毫米以上。在一些實施例中,過濾器162包括位於頂部的入口166,以及位於側邊的出口167。入口166連通濾芯165內部並配置為使具有第二溫度之氦氣原料200進入濾芯165,出口167位於濾芯165之外並配置為使具有第二溫度之氦氣原料200離開濾芯165,入口166及出口167確保冰晶及二氧化碳會被濾芯165攔截。FIG8 is a schematic diagram of a filter 162 according to some embodiments of the present invention. In some embodiments, referring to FIG1 and FIG8 , the filter 162 is configured to separate ice crystals and carbon dioxide (carbon dioxide having a second temperature as a solid) from the helium raw material 200. In some embodiments, the filter 162 includes a filter screen or filter element 165, which may be, for example but not limited to, a single layer or more of a 40-mesh stainless steel wire cloth roll. The length of the filter 162 may be more than 10 mm. In some embodiments, the filter 162 includes an inlet 166 located at the top and an outlet 167 located at the side. The inlet 166 is connected to the interior of the filter element 165 and is configured to allow the helium raw material 200 with the second temperature to enter the filter element 165. The outlet 167 is located outside the filter element 165 and is configured to allow the helium raw material 200 with the second temperature to leave the filter element 165. The inlet 166 and the outlet 167 ensure that ice crystals and carbon dioxide are intercepted by the filter element 165.

在一些實施例中,第六流體導管116位於液態氮儲存桶140中且經配置以連通雜質分離單元160與雜質吸附單元170。第六流體導管116用於自雜質分離單元160接收具有第二溫度之氦氣原料200,並將具有第二溫度之氦氣原料200輸送至雜質吸附單元170。在一些實施例中,第六流體導管116是用於將具有第二溫度之氦氣原料200自過濾器162輸送至雜質吸附單元170。第六流體導管116經配置以連通過濾器162的出口167與雜質吸附單元170。In some embodiments, the sixth fluid conduit 116 is located in the liquid nitrogen storage tank 140 and is configured to communicate the impurity separation unit 160 and the impurity adsorption unit 170. The sixth fluid conduit 116 is used to receive the helium raw material 200 having the second temperature from the impurity separation unit 160 and transport the helium raw material 200 having the second temperature to the impurity adsorption unit 170. In some embodiments, the sixth fluid conduit 116 is used to transport the helium raw material 200 having the second temperature from the filter 162 to the impurity adsorption unit 170. The sixth fluid conduit 116 is configured to connect the outlet 167 of the filter 162 and the impurity adsorption unit 170.

雜質吸附單元170設置為接收經分離第一雜質且降溫至第二溫度之氦氣原料200,並用以吸附氦氣原料200中的第二雜質,以取得經純化氦氣300。雜質吸附單元170用於使降溫至第二溫度之氦氣原料200進行低溫吸附。在一些實施例中,雜質吸附單元170包含吸附劑171,吸附劑171是用於在低溫條件下通過物理吸附,從氦氣原料200中去除雜質的核心組件。經純化氦氣300的純度為99.99%以上。在一些實施例中,經純化氦氣300的純度為99.9995%以上。The impurity adsorption unit 170 is configured to receive the helium raw material 200 from which the first impurity is separated and cooled to the second temperature, and to adsorb the second impurity in the helium raw material 200 to obtain purified helium 300. The impurity adsorption unit 170 is used to perform low-temperature adsorption on the helium raw material 200 cooled to the second temperature. In some embodiments, the impurity adsorption unit 170 includes an adsorbent 171, which is a core component for removing impurities from the helium raw material 200 by physical adsorption under low temperature conditions. The purity of the purified helium 300 is greater than 99.99%. In some embodiments, the purity of the purified helium 300 is greater than 99.9995%.

圖9所示是根據本發明的某些實施例的雜質吸附單元170的分解圖。在一些實施例中,參見圖1及圖9,雜質吸附單元170除包含吸附劑171外,亦包含用於容置吸附劑的桶172。在一些實施例中,吸附劑171是選自於以下群組之單獨或組合:活性氧化鋁、分子篩、矽膠,及活性炭。在一些實施例中,使用具有較高的BET(Brunauer-Emmett-Teller)比表面積和較低的體積密度的粒狀活性炭作為吸附劑171的雜質吸附效益相對較為明顯,這些粒狀活性炭較高的BET比表面積允許更多微孔進行氣體吸附,而較低的體積密度降低了吸附床的重量。活性炭的再生溫度低於其他吸附劑的再生溫度,當飽和時更容易且能更快地再活化。在低溫和較高壓力的的環境下,粒狀活性炭的氮吸附等溫線優於商業上可用的分子篩、矽膠和活性氧化鋁。此外,粒狀活性炭其粒狀形式在低溫下比其他顆粒形式活性炭具有更好的吸附性能。在降溫至第二溫度之氦氣原料200進入桶172的入口後,經由具備多孔性的內導管把降溫至第二溫度之氦氣原料200導入活性碳桶裡進行低溫吸附,這些孔洞有整流、導流以及擴散等作用,使降溫至第二溫度之氦氣原料200的雜質能更有效在低溫環境被吸附。FIG9 is an exploded view of an impurity adsorption unit 170 according to some embodiments of the present invention. In some embodiments, referring to FIG1 and FIG9 , the impurity adsorption unit 170 includes a barrel 172 for containing the adsorbent in addition to the adsorbent 171. In some embodiments, the adsorbent 171 is selected from the following groups alone or in combination: activated alumina, molecular sieve, silica gel, and activated carbon. In some embodiments, the impurity adsorption benefit of using granular activated carbon with a high BET (Brunauer-Emmett-Teller) specific surface area and a low bulk density as adsorbent 171 is relatively obvious. The high BET specific surface area of these granular activated carbons allows more micropores for gas adsorption, while the low bulk density reduces the weight of the adsorption bed. The regeneration temperature of the activated carbon is lower than that of other adsorbents, and it is easier and faster to reactivate when saturated. In an environment of low temperature and high pressure, the nitrogen adsorption isotherm of the granular activated carbon is better than that of commercially available molecular sieves, silica gel and activated alumina. In addition, the granular form of the granular activated carbon has better adsorption performance at low temperatures than other granular activated carbons. After the helium raw material 200 cooled to the second temperature enters the inlet of the barrel 172, the helium raw material 200 cooled to the second temperature is introduced into the activated carbon barrel through a porous inner conduit for low-temperature adsorption. These holes have the functions of rectification, diversion and diffusion, so that the impurities in the helium raw material 200 cooled to the second temperature can be more effectively adsorbed in a low-temperature environment.

在一些實施例中,參見圖1,第七流體導管117位於液態氮儲存桶140中並延伸至液態氮儲存桶140外,且經配置,其一端連通桶172,以與雜質吸附單元170相連接,另一端則連接殼管式熱交換器130的內管路132。第七流體導管117用於自雜質吸附單元170接收經純化氦氣300,並將經純化氦氣300輸送至前述之殼管式熱交換器130的內管路132進行第二熱交換。在一些實施例中,第七流體導管117上設置有感測器117a,用於感測溫度及壓力等參數。In some embodiments, referring to FIG. 1 , the seventh fluid conduit 117 is located in the liquid nitrogen storage barrel 140 and extends outside the liquid nitrogen storage barrel 140, and is configured such that one end thereof is connected to the barrel 172 to be connected to the impurity adsorption unit 170, and the other end thereof is connected to the inner pipe 132 of the shell-and-tube heat exchanger 130. The seventh fluid conduit 117 is used to receive the purified helium 300 from the impurity adsorption unit 170, and to transport the purified helium 300 to the inner pipe 132 of the shell-and-tube heat exchanger 130 for the second heat exchange. In some embodiments, a sensor 117a is provided on the seventh fluid conduit 117 to sense parameters such as temperature and pressure.

如前所述,在一些實施例中,殼管式熱交換器130用於進行第二熱交換,使經純化氦氣300自約第二溫度升溫至約第一溫度。內管路132用於接收經純化氦氣300,並使流經內管路132的經純化氦氣300自約第二溫度升溫至約第一溫度。As described above, in some embodiments, the shell-and-tube heat exchanger 130 is used to perform a second heat exchange to raise the temperature of the purified helium 300 from about the second temperature to about the first temperature. The inner pipe 132 is used to receive the purified helium 300 and raise the temperature of the purified helium 300 flowing through the inner pipe 132 from about the second temperature to about the first temperature.

在一些實施例中,參見圖1,第八流體導管118位於外殼體101中,且經配置以連接殼管式熱交換器130以及第一升溫單元122。第八流體導管118用於自殼管式熱交換器130接收升溫至約第一溫度的經純化氦氣300,並將升溫至約第一溫度的經純化氦氣300輸送至第一升溫單元122進行第一熱交換。在一些實施例中,第八流體導管118是用於將經純化氦氣300自殼管式熱交換器130的內管路132輸送至管套管式熱交換器120。在一些實施例中,管套管式熱交換器120用於將經純化氦氣300自約第一溫度升溫至高於第一溫度,例如升溫至120K以上。In some embodiments, referring to FIG. 1 , the eighth fluid conduit 118 is located in the housing 101 and is configured to connect the shell-and-tube heat exchanger 130 and the first temperature increasing unit 122. The eighth fluid conduit 118 is used to receive the purified helium 300 heated to about the first temperature from the shell-and-tube heat exchanger 130, and to transport the purified helium 300 heated to about the first temperature to the first temperature increasing unit 122 for first heat exchange. In some embodiments, the eighth fluid conduit 118 is used to transport the purified helium 300 from the inner pipe 132 of the shell-and-tube heat exchanger 130 to the tube-in-tube heat exchanger 120. In some embodiments, the tube-in-tube heat exchanger 120 is used to raise the temperature of the purified helium 300 from about the first temperature to above the first temperature, for example, to above 120K.

在一些實施例中,第九流體導管119位於外殼體101中且經配置以連通出口180與第一升溫單元122。第九流體導管119用於使升溫至第一溫度以上的經純化氦氣300輸送至氦氣純化裝置100的外殼體101外,提供由氦氣純化裝置100處理的經純化氦氣300。In some embodiments, the ninth fluid conduit 119 is located in the housing 101 and is configured to communicate the outlet 180 with the first heating unit 122. The ninth fluid conduit 119 is used to transport the purified helium 300 heated to above the first temperature to the outside of the housing 101 of the helium purification device 100, providing the purified helium 300 processed by the helium purification device 100.

圖10為例示是根據本發明的某些實施例的純化氦氣之方法400的方法流程圖。純化氦氣之方法400包括數個步驟:步驟(401),接收一氦氣原料;步驟(402),將該氦氣原料的溫度降至一第一溫度;步驟(403),將水自降溫至該第一溫度之該氦氣原料分離出;步驟(404),將該具有該第一溫度之該氦氣原料的溫度降至一第二溫度;步驟(405),將一第一雜質自具有該第二溫度之該氦氣原料分離出,其中該第一雜質的冰點高於該第二溫度;步驟(406),將一第二雜質自具有該第二溫度且已分離出該第一雜質之該氦氣原料吸附出,以取得一經純化氦氣;及步驟(407),升溫該經純化氦氣。FIG10 is a flow chart illustrating a method 400 for purifying helium according to some embodiments of the present invention. The method 400 for purifying helium includes several steps: step (401), receiving a helium raw material; step (402), lowering the temperature of the helium raw material to a first temperature; step (403), separating water from the helium raw material cooled to the first temperature; step (404), lowering the temperature of the helium raw material having the first temperature to a second temperature. ; step (405), separating a first impurity from the helium raw material having the second temperature, wherein the freezing point of the first impurity is higher than the second temperature; step (406), adsorbing a second impurity from the helium raw material having the second temperature and from which the first impurity has been separated, to obtain purified helium; and step (407), raising the temperature of the purified helium.

為了說明本發明的概念和純化氦氣之方法400,下面提供各種具體實施例。然而,本發明並不欲受限於特定具體實施例。另外,在不同具體實施例中例示的元件、條件或參數可組合或修改,以形成具體實施例的不同組合,只要所使用的元件、參數或條件不衝突即可。為了便於說明,在不同的具體實施例和附圖中,重複具有相似或相同功能和特性的參考編號。純化氦氣之方法400的各種操作可使用如圖1至9任一者所示之具體實施例。In order to illustrate the concepts of the present invention and the method 400 for purifying helium, various specific embodiments are provided below. However, the present invention is not intended to be limited to specific specific embodiments. In addition, the elements, conditions or parameters illustrated in different specific embodiments can be combined or modified to form different combinations of specific embodiments, as long as the elements, parameters or conditions used do not conflict. For ease of explanation, reference numbers with similar or identical functions and characteristics are repeated in different specific embodiments and drawings. Various operations of the method 400 for purifying helium can use the specific embodiments shown in any of Figures 1 to 9.

在一些實施例中,純化氦氣之方法400包括步驟401,其包括接收氦氣原料200。此氦氣原料200可例如但不限於來自於例如超導磁鐵、超導射頻共振腔體、以及MRI等大型設備的冷卻裝置,而為了使這些使用過的液態氦(已經過相變氣化)能夠再被循環使用,本發明的目的之一即再於將其所包含之雜質,例如前述實施例所提及之第一雜質及第二雜質,於不同的階段進行移除處理,以獲得經純化之氦氣,以將其以直接(例如直接與產生待液化之液態氦製造設備相連接,以直接回饋經純化之液態氦)或間接(例如另外藉由運輸設備,將經純化之氦氣運輸至至所需要的設備)的方式,將純化之氦氣再重新提供給產業使用。在一些實施例中,氦氣原料200被外殼體101接收,由入口110進入氦氣純化裝置100。在一些實施例中,純化氦氣之方法400是使用圖1所示氦氣純化裝置100。在一些實施例中,氦氣原料200於步驟402至步驟407係處於約3 bar至約160 bar的壓力。In some embodiments, a method 400 of purifying helium includes step 401 , which includes receiving a helium feedstock 200 . The helium raw material 200 may be, for example but not limited to, from cooling devices of large-scale equipment such as superconducting magnets, superconducting radio frequency resonance cavities, and MRIs. In order to allow the used liquid helium (which has undergone phase change and gasification) to be recycled, one of the purposes of the present invention is to remove the impurities contained therein, such as the first impurities and the second impurities mentioned in the aforementioned embodiment, at different stages to obtain purified helium, so as to provide the purified helium to the industry for use directly (for example, directly connected to a liquid helium production facility to be liquefied to directly feed back the purified liquid helium) or indirectly (for example, by transporting the purified helium to a required facility via a transport facility). In some embodiments, the helium raw material 200 is received by the housing 101 and enters the helium purification device 100 through the inlet 110. In some embodiments, the method 400 for purifying helium uses the helium purification device 100 shown in Figure 1. In some embodiments, the helium raw material 200 is at a pressure of about 3 bar to about 160 bar in steps 402 to 407.

在一些實施例中,純化氦氣之方法400包括步驟402,其包括將氦氣原料200的溫度降至第一溫度。在一些實施例中,第一溫度不超過約120K。在一些實施例中,將氦氣原料200的溫度降至第一溫度包括使氦氣原料200與經純化氦氣300進行第一熱交換,以使氦氣原料200的溫度由200K以上降至第一溫度。在一些實施例中,第一熱交換是通過管套管式熱交換器120進行。在一些實施例中,將氦氣原料200的溫度降至第一溫度包括使用第一降溫單元121將氦氣原料200的溫度降至第一溫度,第一降溫單元121可具有例如圖1至圖3所示態樣。在一些實施例中,通過第一流體導管111將氦氣原料200輸送至第一降溫單元121。In some embodiments, the method 400 for purifying helium includes step 402, which includes reducing the temperature of the helium feedstock 200 to a first temperature. In some embodiments, the first temperature is no more than about 120K. In some embodiments, reducing the temperature of the helium feedstock 200 to the first temperature includes subjecting the helium feedstock 200 to a first heat exchange with the purified helium 300 to reduce the temperature of the helium feedstock 200 from above 200K to the first temperature. In some embodiments, the first heat exchange is performed by a tube-in-tube heat exchanger 120. In some embodiments, reducing the temperature of the helium feedstock 200 to the first temperature includes using a first cooling unit 121 to reduce the temperature of the helium feedstock 200 to the first temperature, and the first cooling unit 121 may have the aspects shown in Figures 1 to 3, for example. In some embodiments, the helium raw material 200 is transported to the first cooling unit 121 through the first fluid conduit 111.

在一些實施例中,純化氦氣之方法400包括步驟403,其包括將水自具有第一溫度之氦氣原料200分離出。在一些實施例中,將水自具有第一溫度之氦氣原料200分離出之步驟包含使具有第一溫度之氦氣原料200與經純化氦氣300進行第二熱交換。在一些實施例中,使用殼管式熱交換器130將水自具有第一溫度之氦氣原料200分離出以及進行第二熱交換。在一些實施例中,殼管式熱交換器130的態樣可例如圖1及圖4所示。在一些實施例中,將水自具有第一溫度之氦氣原料200分離出之步驟包含將具有第一溫度之氦氣原料200通過第二流體導管112輸入至殼管式熱交換器130。 In some embodiments, the method 400 for purifying helium includes step 403, which includes separating water from the helium raw material 200 having a first temperature. In some embodiments, the step of separating water from the helium raw material 200 having a first temperature includes subjecting the helium raw material 200 having a first temperature to a second heat exchange with the purified helium 300. In some embodiments, the separation of water from the helium raw material 200 having a first temperature and the second heat exchange are performed using a shell-and-tube heat exchanger 130. In some embodiments, the shell-and-tube heat exchanger 130 may be, for example, as shown in FIG. 1 and FIG. 4 . In some embodiments, the step of separating water from the helium raw material 200 having a first temperature includes introducing the helium raw material 200 having a first temperature into the shell-and-tube heat exchanger 130 through the second fluid conduit 112.

在一些實施例中,在將氦氣原料200的溫度降至第一溫度後,進行第二熱交換以將水自具有第一溫度之氦氣原料200分離出。在一些實施例中,將具有第一溫度之氦氣原料200通入殼管式熱交換器130之外套殼131與內管路132間之流動空間133,使具有第一溫度之氦氣原料200與內管路132之外表面132a接觸以進行第二熱交換,此內管路132當中包含經純化氦氣300,以與位於內管路132外的氦氣原料200進行第二熱交換;收集冷凝於內管路132之外表面132a以及外套殼131之內壁131a之水;以及使經第二熱交換的氦氣原料200排出殼管式熱交換器130。在一些情況中,例如在純化氦氣的流程啟動之初,尚未有經純化氦氣300產生時,可利用一般冷凝的方式使氦氣原料200降溫,而不透過熱交換的方式使氦氣原料200降溫。 In some embodiments, after the temperature of the helium raw material 200 is reduced to the first temperature, a second heat exchange is performed to separate water from the helium raw material 200 having the first temperature. In some embodiments, the helium raw material 200 having a first temperature is introduced into the flow space 133 between the outer shell 131 and the inner tube 132 of the shell-and-tube heat exchanger 130, so that the helium raw material 200 having the first temperature contacts the outer surface 132a of the inner tube 132 to perform a second heat exchange. The inner tube 132 contains purified helium 300 to perform a second heat exchange with the helium raw material 200 located outside the inner tube 132; water condensed on the outer surface 132a of the inner tube 132 and the inner wall 131a of the outer shell 131 is collected; and the helium raw material 200 that has undergone the second heat exchange is discharged from the shell-and-tube heat exchanger 130. In some cases, such as at the beginning of the helium purification process, when purified helium 300 has not yet been produced, the helium raw material 200 can be cooled by general condensation instead of by heat exchange.

在一些實施例中,在步驟403之後,純化氦氣之方法400還包括將經第二熱交換的氦氣原料200通入第三流體導管113,且第三流體導管113將經第二熱交換的氦氣原料200送至具有第二溫度的環境中。在一些實施例中,第二溫度為不超過約80K。在一些實施例中,在步驟403之後,純化氦氣之方法400還包括將經第二熱交換的氦氣原料200以第三流體導管113送入液態氮儲存桶140中,且第三流體導管113是浸泡於液態氮141中。 In some embodiments, after step 403, the method 400 for purifying helium further includes passing the helium raw material 200 after the second heat exchange into the third fluid conduit 113, and the third fluid conduit 113 sends the helium raw material 200 after the second heat exchange to an environment with a second temperature. In some embodiments, the second temperature is not more than about 80K. In some embodiments, after step 403, the method 400 for purifying helium further includes sending the helium raw material 200 after the second heat exchange into the liquid nitrogen storage tank 140 through the third fluid conduit 113, and the third fluid conduit 113 is immersed in liquid nitrogen 141.

在一些實施例中,純化氦氣之方法400包括步驟404,其包括將經第二熱交換的氦氣原料200的溫度降至第二溫度,第二溫度為不超過約80K,獲得具有第二溫度之氦氣原料200。在一些實施例中,將經第二熱交換的氦氣原料200的溫度降至第二溫度是通過第二降溫單元150進行。在一些實施例中,通過第三流體導管113將經第二熱交換的氦氣原料200自殼管式熱交換器130輸送至第二降溫單元150。在一些實施例中,第二降溫單元150的態樣可例如但不限於圖1或圖6所示態樣。In some embodiments, the method 400 for purifying helium includes step 404, which includes reducing the temperature of the helium raw material 200 after the second heat exchange to a second temperature, the second temperature being no more than about 80K, to obtain the helium raw material 200 having the second temperature. In some embodiments, reducing the temperature of the helium raw material 200 after the second heat exchange to the second temperature is performed by the second cooling unit 150. In some embodiments, the helium raw material 200 after the second heat exchange is transported from the shell-and-tube heat exchanger 130 to the second cooling unit 150 through the third fluid conduit 113. In some embodiments, the second cooling unit 150 may be, for example, but not limited to, the embodiment shown in FIG. 1 or FIG. 6.

在一些實施例中,步驟404至步驟406是於第二溫度或第二溫度以下進行。在一些實施例中,步驟404至步驟406是於液態氮儲存桶140中進行。在一些實施例中,液態氮儲存桶140的態樣可例如但不限於圖1及圖5所示。在一些實施例中,純化氦氣之方法400還包括將第二降溫單元150浸泡於液態氮141中。在一些實施例中,純化氦氣之方法400還包括檢測或測量液態氮儲存桶140中液態氮141的液位及液料量,可例如但不限於以設置於液態氮儲存桶140中的液位感測器144檢測。In some embodiments, steps 404 to 406 are performed at or below the second temperature. In some embodiments, steps 404 to 406 are performed in a liquid nitrogen storage barrel 140. In some embodiments, the state of the liquid nitrogen storage barrel 140 may be, for example, but not limited to, as shown in FIG. 1 and FIG. 5. In some embodiments, the method 400 for purifying helium further includes immersing the second cooling unit 150 in liquid nitrogen 141. In some embodiments, the method 400 for purifying helium further includes detecting or measuring the liquid level and liquid amount of the liquid nitrogen 141 in the liquid nitrogen storage barrel 140, which may be, for example, but not limited to, detected by a liquid level sensor 144 disposed in the liquid nitrogen storage barrel 140.

在一些實施例中,純化氦氣之方法400包括步驟405,其包括將第一雜質自具有第二溫度之氦氣原料200分離出,其中第一雜質的冰點高於第二溫度。在一些實施例中,通過第四流體導管114將具有第二溫度之氦氣原料200自第二降溫單元150輸送至雜質分離單元160。在一些實施例中,純化氦氣之方法400還包括將雜質分離單元160浸泡於液態氮141中。In some embodiments, the method 400 for purifying helium includes step 405, which includes separating a first impurity from the helium raw material 200 having a second temperature, wherein the freezing point of the first impurity is higher than the second temperature. In some embodiments, the helium raw material 200 having the second temperature is transported from the second cooling unit 150 to the impurity separation unit 160 through the fourth fluid conduit 114. In some embodiments, the method 400 for purifying helium further includes immersing the impurity separation unit 160 in liquid nitrogen 141.

在一些實施例中,利用相分離器161及過濾器162將第一雜質自具有第二溫度之氦氣原料200分離出來。在一些實施例中,步驟405包含於相分離器161中提供螺旋狀氣流,以及將具有第二溫度之氦氣原料200通入相分離器161並與螺旋狀氣流接觸,使第一雜質或是包含第一雜質的微粒自由落入相分離器161之底部。在一些實施例中,通過第四流體導管114將具有第二溫度之氦氣原料200自第二降溫單元150輸送至相分離器161。在一些實施例中,相分離器161可例如但不限於圖1及圖7所示態樣。In some embodiments, the first impurity is separated from the helium raw material 200 having the second temperature by using the phase separator 161 and the filter 162. In some embodiments, step 405 includes providing a spiral gas flow in the phase separator 161, and passing the helium raw material 200 having the second temperature into the phase separator 161 and contacting with the spiral gas flow, so that the first impurity or particles containing the first impurity freely fall to the bottom of the phase separator 161. In some embodiments, the helium raw material 200 having the second temperature is transported from the second cooling unit 150 to the phase separator 161 through the fourth fluid conduit 114. In some embodiments, the phase separator 161 can be, for example, but not limited to, the embodiments shown in FIG. 1 and FIG. 7.

在一些實施例中,步驟405還包含過濾具有第二溫度之氦氣原料200,且第一雜質包括二氧化碳及冰晶。在一些實施例中,純化氦氣之方法400還包括將具有第二溫度之氦氣原料200通入第五流體導管115,且第五流體導管115將第二溫度之氦氣原料200由相分離器161輸送至過濾器162。在一些實施例中,使具有第二溫度之氦氣原料200通過過濾器162中的濾心165,以將第一雜質自具有第二溫度之氦氣200原料分離出。在一些實施例中,過濾器162可例如但不限於圖1及圖8所示態樣。In some embodiments, step 405 further includes filtering the helium raw material 200 having a second temperature, and the first impurities include carbon dioxide and ice crystals. In some embodiments, the method 400 for purifying helium further includes passing the helium raw material 200 having a second temperature into the fifth fluid conduit 115, and the fifth fluid conduit 115 transports the helium raw material 200 having a second temperature from the phase separator 161 to the filter 162. In some embodiments, the helium raw material 200 having a second temperature passes through the filter core 165 in the filter 162 to separate the first impurities from the helium raw material 200 having a second temperature. In some embodiments, the filter 162 can be, for example, but not limited to, the embodiments shown in Figures 1 and 8.

在一些實施例中,在步驟405之後,純化氦氣之方法400還包括將具有第二溫度之氦氣原料200通入第六流體導管116,且第六流體導管116將已分離出第一雜質且具有第二溫度之氦氣原料200由雜質分離單元160送至雜質吸附單元170。在一些實施例中,第六流體導管116是浸泡於液態氮141中。In some embodiments, after step 405, the method 400 for purifying helium further includes passing the helium raw material 200 having the second temperature into the sixth fluid conduit 116, and the sixth fluid conduit 116 transports the helium raw material 200 having the second temperature and from which the first impurity has been separated from the impurity separation unit 160 to the impurity adsorption unit 170. In some embodiments, the sixth fluid conduit 116 is immersed in liquid nitrogen 141.

在一些實施例中,純化氦氣之方法400包括步驟406,其包括將第二雜質由已分離出第一雜質且具有第二溫度之氦氣原料200吸附出,以取得經純化氦氣300。在一些實施例中,步驟406係使用物理吸附。在一些實施例中,將已分離出第一雜質且具有第二溫度之氦氣原料200通入雜質吸附單元170,使第二雜質被吸附進而與氦氣原料200分離。在一些實施例中,將已分離出第一雜質且具有第二溫度之氦氣原料200與吸附劑171接觸,使第二雜質被吸附劑171吸附,以獲得經純化氦氣300。在一些實施例中,純化氦氣之方法400還包括將雜質吸附單元170浸泡於液態氮141中。In some embodiments, the method 400 for purifying helium includes step 406, which includes adsorbing a second impurity from the helium raw material 200 from which the first impurity has been separated and which has a second temperature, to obtain purified helium 300. In some embodiments, step 406 uses physical adsorption. In some embodiments, the helium raw material 200 from which the first impurity has been separated and which has a second temperature is passed into the impurity adsorption unit 170, so that the second impurity is adsorbed and then separated from the helium raw material 200. In some embodiments, the helium raw material 200 from which the first impurity has been separated and which has a second temperature is contacted with an adsorbent 171, so that the second impurity is adsorbed by the adsorbent 171, so that the purified helium 300 is obtained. In some embodiments, the method 400 for purifying helium further includes immersing the impurity adsorption unit 170 in liquid nitrogen 141.

在一些實施例中,通過純化氦氣之方法400獲得經純化氦氣300的所需時間是小於10秒。在一些實施例中,通過純化氦氣之方法400獲得經純化氦氣300的所需時間是小於3秒。在一些實施例中,通過純化氦氣之方法400獲得經純化氦氣300的所需時間是小於1秒。In some embodiments, the time required to obtain purified helium 300 by the method 400 of purifying helium is less than 10 seconds. In some embodiments, the time required to obtain purified helium 300 by the method 400 of purifying helium is less than 3 seconds. In some embodiments, the time required to obtain purified helium 300 by the method 400 of purifying helium is less than 1 second.

在一些實施例中,純化氦氣之方法400包括步驟407,其包括升溫經純化氦氣300。在一些實施例中,先將經純化氦氣300升溫至第一溫度,再將具有第一溫度的經純化氦氣300升溫至200K以上之溫度。In some embodiments, the method 400 of purifying helium includes step 407, which includes heating the purified helium 300. In some embodiments, the purified helium 300 is first heated to a first temperature, and then the purified helium 300 having the first temperature is heated to a temperature above 200K.

在一些實施例中,在步驟406後,獲得的經純化氦氣300具有第二溫度,第七流體導管117將具有第二溫度的經純化氦氣300送出液態氮儲存桶140,使經純化氦氣300不再浸泡於液態氮141中。在一些實施例中,步驟407包括使具有第二溫度的經純化氦氣300與具有第一溫度之氦氣原料200進行第二熱交換,以升溫具有第二溫度的經純化氦氣300。In some embodiments, after step 406, the purified helium 300 obtained has a second temperature, and the seventh fluid conduit 117 sends the purified helium 300 having the second temperature out of the liquid nitrogen storage tank 140, so that the purified helium 300 is no longer immersed in the liquid nitrogen 141. In some embodiments, step 407 includes performing a second heat exchange between the purified helium 300 having the second temperature and the helium raw material 200 having the first temperature to increase the temperature of the purified helium 300 having the second temperature.

在一些實施例中,步驟407包括由第七流體導管117將具有第二溫度的經純化氦氣300由雜質吸附單元170輸送至殼管式熱交換器130,並與具有第一溫度之氦氣原料200進行第二熱交換。在一些實施例中,具有第二溫度的經純化氦氣300是被送至殼管式熱交換器130升溫,例如在殼管式熱交換器130的內管路132中升溫。In some embodiments, step 407 includes transporting the purified helium 300 having the second temperature from the impurity adsorption unit 170 to the shell-and-tube heat exchanger 130 through the seventh fluid conduit 117, and performing a second heat exchange with the helium raw material 200 having the first temperature. In some embodiments, the purified helium 300 having the second temperature is transported to the shell-and-tube heat exchanger 130 for temperature increase, for example, the temperature is increased in the inner pipe 132 of the shell-and-tube heat exchanger 130.

在一些實施例中,步驟407包括在第二熱交換之後,使經第二熱交換的經純化氦氣300進行第一熱交換。在一些實施例中,第八流體導管118將經第二熱交換的經純化氦氣300由殼管式熱交換器130輸送至管套管式熱交換器120,並與氦氣原料200進行第一熱交換。在一些實施例中,第八流體導管118將經第二熱交換的經純化氦氣300輸送至第一升溫單元122進行第一熱交換。在一些實施例中,經第一熱交換的經純化氦氣300具有200K以上的溫度。在一些實施例中,第九流體導管119將經第一熱交換的經純化氦氣300輸送至外殼體101之外。在一些實施例中,經純化氦氣300輸送至外殼體101之外的流量為20g/s以上。In some embodiments, step 407 includes subjecting the purified helium 300 that has undergone the second heat exchange to a first heat exchange after the second heat exchange. In some embodiments, the eighth fluid conduit 118 transports the purified helium 300 that has undergone the second heat exchange from the shell-and-tube heat exchanger 130 to the tube-in-tube heat exchanger 120, and performs the first heat exchange with the helium raw material 200. In some embodiments, the eighth fluid conduit 118 transports the purified helium 300 that has undergone the second heat exchange to the first temperature increasing unit 122 for the first heat exchange. In some embodiments, the purified helium 300 that has undergone the first heat exchange has a temperature of more than 200K. In some embodiments, the ninth fluid conduit 119 transports the purified helium 300 after the first heat exchange to the outside of the housing 101. In some embodiments, the flow rate of the purified helium 300 transported to the outside of the housing 101 is greater than 20 g/s.

承上所述,本發明氦氣純化裝置以及純化氦氣之方法包含多階段純化過程,透過物理方法進行低溫換熱及低溫吸附,達到低損耗且高效率的雜質去除,獲得高純度的經純化氦氣。同時,亦可在高氦氣流量(20公克/秒以上,依據設備尺寸之設計亦可再更為提高)的狀態下進行此純化處理,無疑是改善了過往在除去氦氣微量雜質之低效率的問題。As mentioned above, the helium purification device and the method for purifying helium of the present invention include a multi-stage purification process, which uses physical methods to perform low-temperature heat exchange and low-temperature adsorption to achieve low-loss and high-efficiency impurity removal, and obtain high-purity purified helium. At the same time, the purification process can also be carried out at a high helium flow rate (more than 20 grams/second, which can be further increased according to the design of the equipment size), which undoubtedly improves the low efficiency of removing trace impurities in helium in the past.

上文的敘述簡要地提出了本申請某些實施例之特徵,而使本申請所屬技術領域具有通常知識者能夠更全面地理解本申請內容的多種態樣。本申請所屬技術領域具有通常知識者當可明瞭,其可輕易地利用本申請內容作為基礎,來設計或更動其他製程與結構,以實現與此處之實施方式相同的目的和/或達到相同的優點。本申請所屬技術領域具有通常知識者應當明白,這些均等的實施方式仍屬於本申請內容之精神與範圍,且其可進行各種變更、替代與更動,而不會悖離本申請內容之精神與範圍。The above description briefly presents the features of certain embodiments of the present application, so that a person with ordinary knowledge in the art to which the present application belongs can more comprehensively understand the various aspects of the content of the present application. A person with ordinary knowledge in the art to which the present application belongs should understand that he or she can easily use the content of the present application as a basis to design or change other processes and structures to achieve the same purpose and/or achieve the same advantages as the implementation method here. A person with ordinary knowledge in the art to which the present application belongs should understand that these equal implementation methods still belong to the spirit and scope of the content of the present application, and that they can be subjected to various changes, substitutions and modifications without violating the spirit and scope of the content of the present application.

100:氦氣純化裝置 101:外殼體 102:壓縮機 110:入口 111:第一流體導管 112:第二流體導管 113:第三流體導管 114:第四流體導管 115:第五流體導管 116:第六流體導管 117:第七流體導管 117a:感測器 118:第八流體導管 119:第九流體導管 120:管套管式熱交換器 121:第一降溫單元 122:第一升溫單元 130:殼管式熱交換器 131:外套殼 131a:內壁 132:內管路 132a:外表面 133:流動空間 140:液態氮儲存桶 141:液態氮 142:隔熱膜 143:中空空間 144:液位感測器 150:第二降溫單元 160:雜質分離單元 161:相分離器 162:過濾器 163:螺旋氣流 164:狹長空間 165:濾芯 166:入口 167:出口 170:雜質吸附單元 171:吸附劑 172:桶 180:出口 200:氦氣原料 300:經純化氦氣 401:步驟 402:步驟 403:步驟 404:步驟 405:步驟 406:步驟 407:步驟 C:中心軸線 X1:第一方向 X2:第二方向 Z:重力方向100: Helium purification device 101: Shell 102: Compressor 110: Inlet 111: First fluid conduit 112: Second fluid conduit 113: Third fluid conduit 114: Fourth fluid conduit 115: Fifth fluid conduit 116: Sixth fluid conduit 117: Seventh fluid conduit 117a: Sensor 118: Eighth fluid conduit 119: Ninth fluid conduit 120: Tube-in-tube heat exchanger 121: First cooling unit 122: First heating unit 130: Shell-in-tube heat exchanger 131: Outer shell 131a: Inner wall 132: Inner pipeline 132a: Outer surface 133: flow space 140: liquid nitrogen storage tank 141: liquid nitrogen 142: thermal insulation film 143: hollow space 144: liquid level sensor 150: second cooling unit 160: impurity separation unit 161: phase separator 162: filter 163: spiral airflow 164: narrow space 165: filter element 166: inlet 167: outlet 170: impurity adsorption unit 171: adsorbent 172: barrel 180: outlet 200: helium raw material 300: purified helium 401: step 402: step 403: Step 404: Step 405: Step 406: Step 407: Step C: Central axis X1: First direction X2: Second direction Z: Gravity direction

當閱讀附圖時,從以下實施方式更佳瞭解本發明之多個態樣。應注意,根據產業中之標準作法,各種特徵件並未按比例繪出。事實上,為了討論的清晰,可任意增加或減少各種特徵件的尺寸。When reading the accompanying drawings, various aspects of the present invention will be better understood from the following embodiments. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

圖1所示為根據本發明的某些實施例的氦氣純化裝置的示意圖。FIG. 1 is a schematic diagram of a helium purification device according to some embodiments of the present invention.

圖2所示是根據本發明的某些實施例的管套管式熱交換器的示意圖。FIG. 2 is a schematic diagram of a tube-in-tube heat exchanger according to some embodiments of the present invention.

圖3所示是根據本發明的某些實施例的管套管式熱交換器的透視圖。FIG. 3 is a perspective view of a tube-in-tube heat exchanger according to some embodiments of the present invention.

圖4所示是根據本發明的某些實施例的殼管式熱交換器的示意圖。FIG. 4 is a schematic diagram of a shell and tube heat exchanger according to some embodiments of the present invention.

圖5所示是根據本發明的某些實施例的氦氣純化裝置的立體示意圖。FIG5 is a three-dimensional schematic diagram of a helium purification device according to certain embodiments of the present invention.

圖6所示是根據本發明的某些實施例的第二降溫單元的示意圖。FIG6 is a schematic diagram of a second cooling unit according to some embodiments of the present invention.

圖7所示是根據本發明的某些實施例的相分離器的示意圖。FIG. 7 is a schematic diagram of a phase separator according to some embodiments of the present invention.

圖8所示是根據本發明的某些實施例的過濾器的示意圖。FIG. 8 is a schematic diagram of a filter according to some embodiments of the present invention.

圖9所示是根據本發明的某些實施例的雜質吸附單元的分解圖。FIG. 9 is an exploded view of an impurity adsorption unit according to some embodiments of the present invention.

圖10為例示是根據本發明的某些實施例的純化氦氣之方法的方法流程圖。FIG. 10 is a process flow chart illustrating a method for purifying helium according to certain embodiments of the present invention.

100:氦氣純化裝置 100:Helium purification device

101:外殼體 101: Shell

102:壓縮機 102: Compressor

110:入口 110:Entrance

111:第一流體導管 111: First fluid conduit

112:第二流體導管 112: Second fluid conduit

113:第三流體導管 113: Third fluid conduit

114:第四流體導管 114: Fourth fluid conduit

115:第五流體導管 115: Fifth fluid conduit

116:第六流體導管 116: Sixth fluid conduit

117:第七流體導管 117: Seventh fluid conduit

117a:感測器 117a:Sensor

118:第八流體導管 118: Eighth fluid conduit

119:第九流體導管 119: Ninth fluid conduit

120:管套管式熱交換器 120: Tube-in-tube heat exchanger

121:第一降溫單元 121: First cooling unit

122:第一升溫單元 122: First heating unit

130:殼管式熱交換器 130: Shell and tube heat exchanger

131:外套殼 131: Jacket shell

132:內管路 132: Internal pipe

133:流動空間 133:Flow space

140:液態氮儲存桶 140: Liquid nitrogen storage tank

141:液態氮 141: Liquid nitrogen

142:隔熱膜 142: Thermal insulation film

143:中空空間 143:Hollow Space

144:液位感測器 144: Liquid level sensor

150:第二降溫單元 150: Second cooling unit

160:雜質分離單元 160: Impurity separation unit

161:相分離器 161: Phase separator

162:過濾器 162:Filter

170:雜質吸附單元 170: Impurity adsorption unit

171:吸附劑 171: Adsorbent

172:桶 172: Bucket

180:出口 180:Exit

200:氦氣原料 200: Helium raw material

300:經純化氦氣 300: Purified helium

Z:重力方向 Z: direction of gravity

Claims (20)

一種氦氣純化裝置,包含: 一入口,用以接收一氦氣原料; 一第一降溫單元,其設置為將該氦氣原料的溫度降至一第一溫度; 一第二降溫單元,其設置為接收降溫至該第一溫度之該氦氣原料,並將具有該第一溫度之該氦氣原料的溫度降至一第二溫度; 一雜質分離單元,其設置為接收降溫至該第二溫度之該氦氣原料,並將具有該第二溫度之該氦氣原料中的一第一雜質分離出,其中該第一雜質的冰點不低於該第二溫度; 一雜質吸附單元,其設置為接收經分離該第一雜質之該氦氣原料,並用以吸附該氦氣原料中的一第二雜質,以取得一經純化氦氣; 一液態氮儲存桶,其設置為使該第二降溫單元、該雜質分離單元以及該雜質吸附單元於一工作狀態係設置於該液態氮儲存桶內且浸泡於液態氮;以及 一出口,用以輸出該經純化氦氣, 其中,該第一雜質包括冰晶及二氧化碳。 A helium purification device comprises: an inlet for receiving a helium raw material; a first cooling unit, which is configured to reduce the temperature of the helium raw material to a first temperature; a second cooling unit, which is configured to receive the helium raw material cooled to the first temperature, and reduce the temperature of the helium raw material having the first temperature to a second temperature; an impurity separation unit, which is configured to receive the helium raw material cooled to the second temperature, and separate a first impurity from the helium raw material having the second temperature, wherein the freezing point of the first impurity is not lower than the second temperature; an impurity adsorption unit, which is configured to receive the helium raw material from which the first impurity is separated, and to adsorb a second impurity in the helium raw material to obtain a purified helium; A liquid nitrogen storage tank, which is configured so that the second cooling unit, the impurity separation unit and the impurity adsorption unit are arranged in the liquid nitrogen storage tank and immersed in liquid nitrogen in a working state; and an outlet for outputting the purified helium, wherein the first impurity includes ice crystals and carbon dioxide. 如請求項1所述之氦氣純化裝置,其中該經純化氦氣的純度為99.99%以上。A helium purification device as described in claim 1, wherein the purity of the purified helium is greater than 99.99%. 如請求項1所述之氦氣純化裝置,更包含: 一第一升溫單元,其設置於該雜質吸附單元以及該出口間,用以升溫該經純化氦氣。 The helium purification device as described in claim 1 further comprises: A first heating unit, which is disposed between the impurity adsorption unit and the outlet, for heating the purified helium. 如請求項3所述之氦氣純化裝置,其中該第一降溫單元及該第一升溫單元係結合於一管套管式熱交換器中,該管套管式熱交換器係用以將該氦氣原料以及該經純化氦氣進行一第一熱交換。The helium purification device as described in claim 3, wherein the first cooling unit and the first heating unit are combined in a tube-in-tube heat exchanger, and the tube-in-tube heat exchanger is used to perform a first heat exchange between the helium raw material and the purified helium. 如請求項1所述之氦氣純化裝置,更包含: 一殼管式熱交換器,其設置於該第一降溫單元以及該第二降溫單元間,其包含: 一外套殼;以及 一內管路,其容置於該外套殼中,並與該外套殼之一內壁間具有一流動空間,該內管路係與該雜質吸附單元相連接,以接收該經純化氦氣,該流動空間係連通於該第一降溫單元,該殼管式熱交換器係用以將該氦氣原料與該經純化氦氣進行一第二熱交換。 The helium purification device as described in claim 1 further comprises: A shell-and-tube heat exchanger disposed between the first cooling unit and the second cooling unit, comprising: An outer shell; and An inner pipeline contained in the outer shell and having a flow space between an inner wall of the outer shell, the inner pipeline being connected to the impurity adsorption unit to receive the purified helium, the flow space being connected to the first cooling unit, and the shell-and-tube heat exchanger being used to perform a second heat exchange between the helium raw material and the purified helium. 如請求項1所述之氦氣純化裝置,其中該雜質分離單元包含: 一相分離器,其設置為利用螺旋氣流將該第一雜質自該氦氣原料分離出;以及 一過濾器,其設置為將該冰晶及該二氧化碳自該氦氣原料分離出。 A helium purification device as described in claim 1, wherein the impurity separation unit comprises: a phase separator configured to separate the first impurity from the helium raw material using a spiral gas flow; and a filter configured to separate the ice crystals and the carbon dioxide from the helium raw material. 如請求項1所述之氦氣純化裝置,其中該雜質吸附單元包含活性炭。A helium purification device as described in claim 1, wherein the impurity adsorption unit comprises activated carbon. 如請求項1所述之氦氣純化裝置,其中該第一溫度為不超過約120K,且高於該第二溫度。A helium purification device as described in claim 1, wherein the first temperature is no more than about 120K and is higher than the second temperature. 如請求項1所述之氦氣純化裝置,其中該第二溫度為不超過約80K。A helium purification apparatus as described in claim 1, wherein the second temperature is not more than about 80K. 一種純化氦氣之方法,該方法包含: 接收一氦氣原料; 將該氦氣原料的溫度降至一第一溫度,該第一溫度不超過約120K; 將水自降溫至該第一溫度之該氦氣原料分離出; 於一液態氮儲存桶中將具有該第一溫度之該氦氣原料的溫度降至一第二溫度; 於該液態氮儲存桶中將一第一雜質自具有該第二溫度之該氦氣原料分離出,其中該第一雜質的冰點高於該第二溫度,該第一雜質包括冰晶及二氧化碳; 於該液態氮儲存桶中將一第二雜質自具有該第二溫度且已分離出該第一雜質之該氦氣原料吸附出,以取得一經純化氦氣;以及 於該液態氮儲存桶之外升溫該經純化氦氣。 A method for purifying helium, the method comprising: receiving a helium raw material; reducing the temperature of the helium raw material to a first temperature, the first temperature not exceeding about 120K; separating water from the helium raw material cooled to the first temperature; reducing the temperature of the helium raw material having the first temperature to a second temperature in a liquid nitrogen storage tank; separating a first impurity from the helium raw material having the second temperature in the liquid nitrogen storage tank, wherein the freezing point of the first impurity is higher than the second temperature, and the first impurity includes ice crystals and carbon dioxide; adsorbing a second impurity from the helium raw material having the second temperature and from which the first impurity has been separated in the liquid nitrogen storage tank to obtain purified helium; and The purified helium is heated outside the liquid nitrogen storage tank. 如請求項10所述之方法,其中該第二雜質係選自於由氮氣、氧氣、碳氫化合物及油汙所組成之群組其中至少之一者。The method of claim 10, wherein the second impurity is at least one selected from the group consisting of nitrogen, oxygen, hydrocarbons and oil pollution. 如請求項10所述之方法,其中該氦氣原料於純化過程係包含一壓力介於約3 bar至約160 bar。The method of claim 10, wherein the helium feedstock comprises a pressure between about 3 bar and about 160 bar during purification. 如請求項10所述之方法,其中將該氦氣原料的溫度降至該第一溫度之步驟包含: 使該氦氣原料與該經純化氦氣進行一第一熱交換。 The method as described in claim 10, wherein the step of reducing the temperature of the helium raw material to the first temperature comprises: subjecting the helium raw material to a first heat exchange with the purified helium. 如請求項10所述之方法,其中該經純化氦氣輸送至該液態氮儲存桶之外的流量為20g/s以上。The method as described in claim 10, wherein the flow rate of the purified helium gas transported to the outside of the liquid nitrogen storage tank is greater than 20 g/s. 如請求項10所述之方法,其中將水自降溫至該第一溫度之該氦氣原料分離出之步驟包含: 使具有該第一溫度之該氦氣原料與該經純化氦氣進行第二熱交換。 The method as described in claim 10, wherein the step of separating water from the helium raw material cooled to the first temperature comprises: subjecting the helium raw material having the first temperature to a second heat exchange with the purified helium. 如請求項10所述之方法,其中通過該純化氦氣之方法獲得該經純化氦氣的所需時間是小於10秒。The method of claim 10, wherein the time required to obtain the purified helium by the method of purifying helium is less than 10 seconds. 如請求項15所述之方法,其中該第二熱交換包含: 將該經純化氦氣通入一殼管式熱交換器內之一內管路; 將具有該第一溫度之該氦氣原料通入該殼管式熱交換器之一外套殼與該內管路間之一流動空間,使具有該第一溫度之該氦氣原料與該內管路之一外表面接觸;以及 收集冷凝於該內管路之該外表面以及該外套殼之一內壁之水。 The method as described in claim 15, wherein the second heat exchange comprises: Passing the purified helium into an inner tube in a shell-and-tube heat exchanger; Passing the helium raw material having the first temperature into a flow space between an outer shell and the inner tube of the shell-and-tube heat exchanger so that the helium raw material having the first temperature contacts an outer surface of the inner tube; and Collecting water condensed on the outer surface of the inner tube and an inner wall of the outer shell. 如請求項10所述之方法,其中將該第一雜質自具有該第二溫度之該氦氣原料分離出之步驟包含: 於一相分離器中提供一螺旋狀氣流; 將具有該第二溫度之該氦氣原料通入該相分離器並與該螺旋狀氣流接觸,使該第一雜質自由落入該相分離器之一底部,該第二溫度為不超過約80K。 The method as described in claim 10, wherein the step of separating the first impurity from the helium raw material having the second temperature comprises: Providing a spiral gas flow in a phase separator; Passing the helium raw material having the second temperature into the phase separator and contacting it with the spiral gas flow, allowing the first impurity to freely fall to a bottom of the phase separator, and the second temperature is not more than about 80K. 如請求項10所述之方法,其中將該第一雜質自具有該第二溫度之該氦氣原料分離出之步驟包含: 過濾具有該第二溫度之該氦氣原料。 The method as described in claim 10, wherein the step of separating the first impurity from the helium raw material having the second temperature comprises: Filtering the helium raw material having the second temperature. 如請求項10所述之方法,其中將該第二雜質自具有該第二溫度且已分離出該第一雜質之該氦氣原料吸附出之步驟係使用雜質吸附單元。The method of claim 10, wherein the step of adsorbing the second impurity from the helium raw material having the second temperature and from which the first impurity has been separated uses an impurity adsorption unit.
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