TWI885666B - Shallow etching process chamber - Google Patents

Abstract

The present invention relates to a shallow etching processing chamber, which comprises: a susceptor arranged inside the chamber space; a lifting ring formed on both sides of the susceptor; and a moving device used to move the lifting ring up and down, through which the lifting ring moves up and down, the wafer can move up and down on the upper part of the susceptor.

Description

Shallow Etch Processing Chamber

The present invention relates to a shallow etching process chamber, and more specifically, to a shallow etching process chamber capable of adjusting an etching process space during an etching process.

With the miniaturization of semiconductor manufacturing processes and the stereoization of three-dimensional (3D) structures, a technology is needed to remove thin oxide films in a partial etching process or to remove thin films with a very high aspect ratio. In addition, in order to minimize the difference in etching amount between relatively wide patterns and narrow patterns, that is, the loading effect, a technology is being developed to slowly and repeatedly etch at the atomic layer level without the loading effect. Regarding this high aspect ratio atomic layer etching technology, technologies such as atomic layer etching (ALE), atomic layer removal (ALR), or dry cleaning are being developed. The common point of this shallow etching process is that it includes an adsorption step performed by a self-limited modification reaction at a low temperature below 80°C and a removal step of removing the modified atomic layer level film at a high temperature above 120°C. The adsorption step and the removal step of the known shallow etching equipment are both performed by a thermal process. The disadvantage of this equipment is that a large amount of process time is required, thereby limiting productivity. In addition, equipment that uses plasma energy for the adsorption step and thermal energy for the removal step has been developed, and attempts have been made to gradually change the low temperature and high temperature through various methods. Regarding atomic layer etching (ALE), Korean Patent Publication No. 10-2017-0124087 discloses a method and apparatus for processing a semiconductor substrate. In addition, Korean Patent Publication No. 10-2020-0116273 discloses a method for manufacturing a microelectronic workpiece including forming a patterned structure on the microelectronic workpiece. However, the prior art does not disclose an atomic layer etching (ALE) or dry cleaning technology that can simultaneously meet high efficiency and productivity.

The present invention aims to solve the problems of the prior art, and its purpose is as follows.

Existing technical literature

Patent document 1: Korean Patent Publication No. 10-2017-0124087 (Lam Research Corporation, published on November 9, 2017), using atomic layer etching and selective deposition to etch substrates.

Patent document 2: Korean Patent Publication No. 10-2020-0116273 (Tokyo Electron Co., Ltd., published on October 7, 2020), atomic layer etching of tungsten or other metal layers.

The purpose of the present invention is to provide a shallow etching processing chamber, which can simultaneously meet high efficiency and productivity when performing a low-temperature adsorption step using plasma energy.

According to a suitable implementation of the present invention, the shallow etching processing chamber includes: a susceptor, which is arranged inside the chamber space; a lifting ring, which is formed on both sides of the susceptor; and a moving device, which is used to move the lifting ring up and down, and through the up and down movement of the lifting ring, the wafer can move up and down on the top of the susceptor.

According to another suitable implementation of the present invention, the shallow etching processing chamber further comprises: an internal nozzle and an external nozzle, which are arranged at the upper part of the chamber space, and a nozzle heater is arranged in the internal nozzle.

According to another suitable embodiment of the present invention, the shallow etching processing chamber further comprises: a baffle disposed between the inner nozzle and the outer nozzle.

According to another suitable embodiment of the present invention, the lifting ring rises and contacts the baffle.

According to another suitable implementation of the present invention, a process space is formed between the inner nozzle and the wafer by means of a rising lifting ring.

According to another suitable implementation of the present invention, the shallow etching processing chamber further comprises: a lifting ring heater, which is arranged inside the lifting ring.

According to another suitable embodiment of the present invention, the moving device includes: a linear gear; and a lifting shaft capable of moving along the linear gear.

According to another suitable embodiment of the present invention, the shallow etching processing chamber further comprises: a moving gas wall which surrounds the upper part of the inner nozzle and can move up and down.

According to another suitable embodiment of the present invention, a flow path is formed in the baffle.

According to another suitable embodiment of the present invention, the lifting ring contacts the bottom surface of the baffle, or contacts a part of the bottom surface of the baffle, or contacts the bottom surface and inner side surface of the baffle.

According to the shallow etching processing chamber of the present invention, a low-temperature adsorption step based on the wafer temperature and a high-temperature removal step using plasma energy can be performed in one chamber, and the temperature of the wafer can be changed quickly, thereby efficiently performing the adsorption step. Therefore, the productivity is improved and the process efficiency of removing thin films with a high aspect ratio is improved. The shallow etching processing chamber according to the present invention can be applied to various micro processes including atomic layer etching (ALE) processes, and the present invention is not limited thereto.

11: Chamber space

12: Electrostatic suction cup

13: Lifting ring

14a,14b: Linear gears

15a,15b: lifting shaft

16a,16b,16c,19: Cables

17a: Internal nozzle

17b: External nozzle

18: Baffle

41a,41b: Gear unit

42: Moving gas wall

121,131,171: Heater

RPS: Remote Plasma Source

B: Base block

C: Cover

P: Inflow path

P1,P2,P3,P4: Power supply device

M1,M2,M3: Motor

W: Wafer

P51,P52,P53,P54,P55: Steps

FIG. 1 shows an embodiment of a shallow etching processing chamber according to the present invention.

FIG. 2 shows an embodiment of the operating structure of the shallow etching processing chamber according to the present invention.

FIG. 3 shows an embodiment of the relative positional relationship between a baffle and a lift ring in a shallow etching processing chamber according to the present invention.

FIG. 4 shows another embodiment of a shallow etching processing chamber according to the present invention.

FIG. 5 shows an embodiment of a flow chart of an atomic layer etching (ALE) process in a shallow etching processing chamber according to the present invention.

The present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings, but these embodiments are only used to clearly understand the present invention, and the present invention is not limited to these embodiments. In the following description, components with the same component symbols in different drawings have similar functions, so unless necessary for understanding the present invention, they will not be repeated. Known components will be briefly described or omitted, but it should not be understood that they are excluded from the embodiments of the present invention.

FIG. 1 shows an embodiment of a shallow etching processing chamber according to the present invention.

Referring to FIG. 1 , the shallow etching processing chamber includes: a susceptor, which is disposed inside the chamber space 11; a lifting ring 13, which is formed on both sides of the susceptor; and a moving device, which is used to move the lifting ring 13 up and down. Through the up and down movement of the lifting ring 13, the wafer W can move up and down on the upper part of the susceptor.

The chamber space 11 may be separated from the outside by a bottom surface and a peripheral wall, and the cover C may be coupled to the upper portion of the chamber space 11. The chamber space 11 may be formed in a vacuum state, and plasma may be generated in the chamber space 11, or the generated plasma may flow into the chamber space 11. The chamber space 11 may have various structures capable of performing a semiconductor process or an etching process. A base block B may be formed in the chamber space 11, and a susceptor may be provided on the upper portion of the base block B to fix the wafer W. The susceptor may be various devices for fixing the wafer W, and may include a heater 131 or a coolant flow path. The base may include, for example, an electrostatic chuck 12. An embodiment using the electrostatic chuck 12 will be described below, but the base is not limited thereto. The electrostatic chuck 12 may be disposed on the upper portion of the base block B, a heater 121 may be disposed inside the electrostatic chuck 12, and a wafer W used for an etching process may be fixed on the upper surface of the electrostatic chuck 12. In addition, a lifting ring 13 is disposed on the outer peripheral surface of the electrostatic chuck 12. The lifting ring 13 is used to fix the wafer W fixed on the upper surface of the electrostatic chuck 12 and maintain a uniform plasma density to prevent the wafer W from being contaminated. The lifting ring 13 may have the same or similar function as the edge ring, and the edge ring may be the lifting ring 13. A heater 131 is provided inside the lifting ring 13 so that the temperature of the lifting ring 13 can be controlled. The lifting ring 13 can support the outer peripheral portion of the wafer W, and the two side portions of the lifting ring 13 facing each other can move up and down through the moving device. When the lifting ring 13 supporting the wafer W moves upward, the wafer W can move upward accordingly. As described above, the lifting ring 13 can play a role in moving the wafer W upward or downward. The moving device includes linear gears 14a, 14b and lifting shafts 15a, 15b that can move along the linear gears 14a, 14b. The first linear gear 14a and the second linear gear 14b can extend vertically upward from the bottom surface of the chamber space, and meshing teeth can be formed on one side of the first linear gear 14a and the second linear gear 14b along the extension direction of the first linear gear 14a and the second linear gear 14b. The lifting shafts 15a and 15b can be respectively coupled to the first linear gear 14a and the second linear gear 14b and can move up and down. The upper ends of the lifting shafts 15a and 15b can be coupled to the lower parts of the mutually facing parts of the lifting ring 13, and driven by the first motor M1 and the second motor M2, the lifting shafts 15a and 15b can move up and down along the linear gears 14a and 14b, thereby moving the lifting ring 13 up and down. For example, the lifting shafts 15a and 15b can include small gears that engage with the linear gears 14a and 14b. The up and down movement of the lifting shafts 15a and 15b relative to the linear gears 14a and 14b can be achieved by various methods, and the present invention is not limited thereto. Electric power for temperature control may be supplied to the heater 121 provided in the electrostatic chuck 12 or the heater 131 provided in the lifting ring 13, and the first power supply device P1, the second power supply device P2, and the third power supply device P3 may supply electric power to the electrostatic chuck heater 121 and the lifting ring heater 131 through the first cable 16a, the second cable 16b, and the third cable 16c to adjust the temperature of the electrostatic chuck 12 or the lifting ring 13. For example, the temperature of the electrostatic chuck 12 may be adjusted to a temperature range of 20°C to 80°C, and the temperature of the lifting ring 13 may be adjusted to a temperature range of 150°C to 300°C. Electricity can be supplied to the two sides of the heater 131 disposed inside the lifting ring 13, which face each other, to adjust the temperature of the lifting ring 13. The heater 131 inside the lifting ring 13 can be formed by various methods, for example, a generally circular heater 131 can be disposed inside the lifting ring 13, or the heater 131 can be disposed on the two sides, but the present invention is not limited thereto.

The cover C may be coupled to the upper portion of the chamber space 11, and an inflow path P for guiding plasma from the remote plasma source RPS to the inside of the chamber space may be formed in the central portion of the cover C. In addition, an internal nozzle 17a may be provided at the lower portion of the cover C, and an external nozzle 17b may be provided on the outer side of the periphery of the internal nozzle 17a. The internal nozzle 17a or the external nozzle 17b may be made of a material such as aluminum, but is not limited thereto. The internal nozzle 17a may have the shape of a circular plate or a polygonal plate and have a flat plate shape, and a through hole may be formed throughout the internal nozzle 17a that passes through in a direction from top to bottom for plasma or gas to flow in. In addition, a heater 171 may be provided inside the inner nozzle 17a, and the power supply device P4 may supply power through the cable 19 to adjust the temperature of the inner nozzle 17a to a temperature range of 300°C to 400°C. The edge of the inner nozzle 17a may be in a downwardly inclined shape, and the outer nozzle 17b may be provided on the outer side of the inner nozzle 17a. The outer nozzle 17b may be in a shape that is inclined outward in a shape extending from the inclination of the edge of the inner nozzle 17a. Similar to the inner nozzle 17a, a plurality of through holes for guiding plasma or gas into the chamber space 11 may be uniformly formed in the outer nozzle 17b. A baffle 18 may be provided between the inner nozzle 17a and the outer nozzle 17b, and at least one slit or through hole may be formed in the baffle 18 in a horizontal direction or a similar direction. The baffle 18 may be made of quartz or a similar material, but is not limited thereto. The baffle 18 may include an inclined outer surface, and the inclined outer surface may be connected to the inclined surface of the edge of the inner nozzle 17a and the inclined surface of the outer nozzle 17b. The baffle 18 may have various structures that can block heat transfer between the inner nozzle 17a and the outer nozzle 17b and prevent the attack of free radicals, but the present invention is not limited thereto. The process of effectively performing an etching process in an etching processing chamber having such a structure will be described below.

FIG. 2 shows an embodiment of the operating structure of the shallow etching processing chamber according to the present invention.

2 , during the etching process, as shown in part (A) of FIG. 2 , the wafer W can be placed on the electrostatic chuck 12 for an adsorption process, and as shown in part (B) of FIG. 2 , the wafer W can be moved upward for a removal process. The remote plasma source RPS can flow into the chamber space 11 through the inflow path P, and since ammonia (NH ₃ ), nitrogen trifluoride (NF ₃ ), or argon (Ar) exists in the chamber space 11 , ions or radicals for the adsorption process (modification step) can be formed by the inflowing plasma. The wafer W can be fixed on the electrostatic chuck 12 . Specifically, the wafer W can be fixed on a base, which is made of an aluminum material and includes a heater or a cooler. The internal nozzle 17a formed above the electrostatic chuck 12 can have the function of allowing the formed ions and free radicals to flow evenly to the upper part of the wafer W fixed on the base. The power supply device can supply power to the heater 171 through the cable 19 to maintain the temperature of the internal nozzle 17a within a temperature range of 300°C to 400°C. The external nozzle 17b can have the function of controlling the process uniformity between the side of the internal nozzle 17a and the outer peripheral wall of the chamber space 11. The gas may flow toward the side direction of the inner nozzle 17a or the outer nozzle 17b through the slits or through holes formed in the horizontal direction in the baffle 18. The baffle 18 may have the function of blocking the transfer of heat from the inner nozzle 17a to the outer nozzle 17b, and may be made of crystal or a similar material to prevent the attack of free radicals. In addition, the inner nozzle 17a, the outer nozzle 17b, and the outer peripheral wall or cover C of the chamber space 11 may be made of aluminum or a similar material. In addition, the wafer base may be made of aluminum or a similar material, and may be maintained in a temperature range of 20°C to 80°C by the power supplied to the heater 121 through a cable by a power supply device or by a cooling device. The lifting ring 13 may be in a ring shape made of aluminum or crystal material, and as described above, a heater 131 may be provided inside the lifting ring 13. In addition, the power supply device may supply power to the heater 131 through the cables 16b and 16c to maintain the lifting ring 13 within a temperature range of 150° C. to 300° C. In this state, plasma is supplied from a remote plasma source RPS with a power of 500W to 3000W, and an adsorption process is performed in the presence of ammonia (NH ₃ ), nitrogen trifluoride (NF ₃ ), and argon (Ar). Inside the chamber space 11, the regional temperature of the inner nozzle 17a can be about 400°C, the regional temperature of the outer nozzle 17b can be about 150°C, the regional temperature adjacent to the wafer W can be about 200°C, the regional temperature of the lower part of the wafer W can be about 100°C, and the regional temperature of the susceptor can be about 50°C. Under such process conditions, after the adsorption step is completed, the lifting ring 13 can be moved upward by a moving device including linear gears 14a, 14b, lifting shafts 15a, 15b, or motors M1, M2. The lifting ring 13 can contact a point about 2 mm from the outer circumference of the wafer W, and the lifting ring 13 can rise and contact the baffle 18. Therefore, a narrow removal process space for performing a removal step can be formed by the inner nozzle 17a, the baffle 18, the lifting ring 13, and the wafer W. In this state, the inflow of plasma from the remote plasma source RPS is blocked, and as shown in part (B) of FIG. 2 , the thin film formed on the wafer W can be removed through the argon (Ar) in the removal process space. The argon (Ar) required for the removal process can flow into the interior of the removal process space through the through hole formed in the inner nozzle 17a. After the removal process is completed, the remaining argon (Ar) can be discharged to the outside through the through hole or slit formed in the baffle 18. The set temperature of the high-temperature internal nozzle 17a, the distance between the wafer W and the internal nozzle 17a, or the temperature of the wafer W can be appropriately adjusted. In addition, the distance between the internal nozzle 17a and the wafer W, the gas flow capacity of the baffle 18, and the gas flow rate can be controlled in the removal process space, so that the internal pressure of the removal process space can be controlled. The internal nozzle 17a and the lifting ring 13 can have various structures required to form the removal process space, control the temperature, or control the pressure. For example, they can have various structures that control the gas flow and pressure by restricting the flow of the gas. In addition, as will be described below, a moving gas wall may be provided on the upper portion of the inner nozzle 17a to improve process uniformity by controlling the gas flow rate and pressure in the removal process space. The inner nozzle 17a, the lifting ring 13, or the baffle 18 may have various structures capable of controlling the temperature, pressure, space size, or gas flow inside the removal process space, but the present invention is not limited thereto.

FIG. 3 shows an embodiment of the relative positional relationship between a baffle and a lift ring in a shallow etching processing chamber according to the present invention.

Referring to FIG3 , the lifting ring 13 contacts the bottom surface of the baffle 18, or contacts a part of the bottom surface of the baffle 18, or contacts the bottom surface and the inner surface of the baffle 18. The linear gears 14a, 14b and the lifting shafts 15a, 15b are driven by the motors M1, M2 to operate, and the lifting ring 13 can move upward and contact the baffle 18. Referring to part (B) of FIG3 , the lifting ring 13 is annular as a whole, and the inner side portion can be in a flat shape, and can be tilted outward and upward and then become a flat shape again. In addition, the baffle 18 can be in a shape in which the upper surface extends in a flat shape and then tilts downward. In addition, the lower surface of the baffle 18 can be in a flat shape. In such a structure of the lifting ring 13 and the baffle 18, the outer surface of the lifting ring 13 can contact the bottom surface of the baffle 18, so that the side of the removal process space is sealed, so that gases such as argon (Ar) can flow through the through holes formed in the baffle 18.

Referring to part (C) of FIG. 3 , the baffle 18 may extend a relatively long length in the inner direction of the inner nozzle 17a, and the outer plane of the lifting ring 13 may contact a portion of the bottom surface of the baffle 18. In addition, a gap may be formed between the inner plane of the lifting ring 13 and the uncontacted plane of the baffle 18.

Referring to part (D) of FIG. 3 , the lifting ring 13 may include an inner plane, an inclined plane extending outward, a middle plane, and a step plane formed below the middle plane. The edge portion of the wafer W may contact the inner plane, for example, the length of the inner plane may be 2.0 mm to 3.0 mm. The baffle 18 may include an inner vertical plane and a bottom surface, and the vertical plane may contact the vertical edge interface formed by the middle plane and the step plane. In addition, the bottom surface of the baffle 18 may contact the step plane. In such a contact structure, a guide hole connected to the through hole of the baffle 18 may be formed in the lifting ring 13. As described above, the lifting ring 13 or the baffle 18 may have various structures that can contact each other to seal the side of the removal process space, but the present invention is not limited thereto.

FIG. 4 shows another embodiment of a shallow etching processing chamber according to the present invention.

4 , the etching processing chamber may further include a moving gas wall 42, which surrounds the upper portion of the inner nozzle 17a and is capable of moving up and down. As shown in part (A) of FIG. 4 , in the adsorption process step, the moving gas wall 42 may be located at the upper portion of the cover C of the chamber. The moving gas wall 42 may be in the shape of a hollow cylinder or a hollow polyhedron surrounding the inner nozzle 17a. Gear units 41a, 41b for moving the moving gas wall 42 may be disposed at positions of the moving gas wall 42 facing each other, and as shown in part (B), the moving gas wall 42 may be driven by the motor M3 to move downward along the gear units 41a, 41b. In addition, the moving gas wall 42 can be arranged to surround the upper part of the inner nozzle 17a. Therefore, the gas flowing into the removal process space through the through hole formed in the inner nozzle 17a can be restricted or regulated. The moving gas wall 42 can have a structure adapted to the shape of the inner nozzle 17a, and can be moved up and down by various methods, and the present invention is not limited thereto.

FIG. 5 shows an embodiment of a flow chart of an atomic layer etching (ALE) process in a shallow etching processing chamber according to the present invention.

Referring to FIG. 5 , the flow of performing an atomic layer etching (ALE) process in an etching processing chamber includes the following steps: placing and fixing a wafer on a base of an electrostatic chuck (step P51); controlling the temperature inside the etching processing chamber, and guiding plasma into the chamber to perform an adsorption process step or a self-limited modification process (step P52); after the adsorption process is completed, the wafer is raised by the rise of the lifting ring, and a removal process space is formed at the upper part of the process chamber (step P53); controlling the temperature of the lifting ring, the pressure of the removal process space, or the gas flow conditions (step P54); and performing a removal process through argon (Ar) (step P55).

Ions and free radicals for adsorption process can be formed by remote plasma source, and an internal nozzle can be set so that the formed ions and free radicals flow uniformly in the direction of wafer. The internal nozzle can be maintained in the temperature range of 300 to 400°C, and an external nozzle for adjusting the uniformity of the process can be set between the side of the internal nozzle and the chamber wall. A baffle that allows gas to flow to the side can be set between the internal nozzle and the external nozzle. The baffle can be made of materials such as crystal to block the transfer of heat and prevent the attack of free radicals. In addition, the internal nozzle, the external nozzle, and the chamber wall can be made of aluminum material. In addition, the wafer base is made of aluminum and may include a heater or a coolant path for coolant flow. The lifting ring on the side of the wafer may be made of aluminum or a crystal material, and a heater may be provided inside the lifting ring. The lifting ring having such a structure can be maintained within a temperature range of 150 to 300°C. Under such conditions, plasma can flow into the interior of the chamber for an adsorption process (step P52). The lifting ring may include a lifting ring up and down moving device, and the lifting ring can be raised to the position of the nozzle through the up and down moving device, so that the wafer can be raised (step P53). In the adsorption step, the wafer is fixed on the base and maintained in the temperature range of 20 to 80°C, and a self-limiting modification reaction process can be performed by ions and radicals formed by the remote plasma source. Therefore, in the removal step performed in a state where the wafer rises and forms a removal process area, the wafer moves upward through the lifting ring in a high temperature state of 150 to 300°C, and can move upward to a position where the lifting ring contacts the baffle. Therefore, the wafer is located near the nozzle maintained in the temperature range of 300 to 400°C. As described above, a removal process space can be formed by the high-temperature internal nozzle, the wafer, the baffle, and the lifting ring, and the temperature, pressure, or gas flow conditions of the removal process space can be controlled (step P54). In the narrow removal process space thus formed, a gas such as argon (Ar) used for the removal process can be filled into the removal process space through the through hole formed in the nozzle. In addition, such a gas can be discharged to the outside through the through hole or slit formed in the baffle. The temperature of the wafer can be appropriately controlled in the removal step by adjusting the set temperature of the high-temperature nozzle and the distance between the wafer and the nozzle, so that a removal process for removing the thin film formed in the modification process can be performed (step P55). The pressure of the newly formed removal process space can be controlled by the distance between the nozzle and the wafer, the gas flow capacity of the baffle, or the gas flow rate. The size of the removal process space can be controlled by various forms of baffles or the shape of the lifting ring, or the flow rate or pressure of the gas can be controlled, but the present invention is not limited thereto. Preferably, a moving gas wall can be formed on the upper part of the nozzle to improve uniformity. Various configurations for removing process conditions can be added to the removal process space, and the present invention is not limited thereto.

Although Shang Wenzhong has described the present invention in detail with reference to the embodiments, a person with ordinary knowledge in the field can make various changes and modifications with reference to the embodiments without departing from the technical idea of the present invention. The present invention is not limited by these changes and modifications, but is limited by the scope of the attached patent application.

11: Chamber space

12: Electrostatic suction cup

13: Lifting ring

14a,14b: Linear gears

15a,15b: lifting shaft

16a,16b,16c,19: Cables

17a: Internal nozzle

17b: External nozzle

18: Baffle

121,131,171: Heater

RPS: Remote Plasma Source

C: Cover

P: Inflow path

P1,P2,P3,P4: Power supply device

M1,M2: Motor

W: Wafer

Claims (9)

A shallow etching processing chamber comprises: A susceptor disposed inside a chamber space; A lifting ring formed on both sides of the susceptor; A moving device used to move the lifting ring up and down; and A lifting ring heater disposed inside the lifting ring; Wherein, through the up and down movement of the lifting ring, a wafer moves up and down on the upper part of the susceptor. The shallow etching processing chamber as described in claim 1 further comprises: an inner nozzle and an outer nozzle, which are arranged at the upper part of the chamber space, and a nozzle heater is arranged in the inner nozzle. The shallow etching processing chamber as described in claim 2 further comprises: A baffle disposed between the inner nozzle and the outer nozzle. A shallow etching processing chamber as described in claim 3, wherein the lifting ring rises and contacts the baffle. A shallow etching processing chamber as described in claim 1, wherein a process space is formed between an inner nozzle and the wafer by raising the lifting ring. A shallow etching processing chamber as described in claim 1, wherein the moving device comprises: a linear gear; and a lifting shaft that moves along the linear gear. The shallow etching processing chamber as described in claim 1 further comprises: A moving gas wall that surrounds the upper part of an inner nozzle and moves up and down. A shallow etching processing chamber as described in claim 1, wherein a flow path is formed in a baffle. A shallow etching processing chamber as described in claim 4, wherein the lifting ring contacts the bottom surface of the baffle, or contacts a portion of the bottom surface of the baffle, or contacts the bottom surface and inner side surface of the baffle.

Images