TWI885144B - Substrate processing device, manufacturing method thereof, and exhaust structure - Google Patents

Abstract

[Topic] Provide a substrate processing device that "can inhibit rebound particles caused by the rotating blades of a vacuum pump connected to an exhaust port from invading a processing container, and has excellent exhaust performance." [Solution] Inside the processing container of the substrate processing device, there is a mounting surface for mounting a substrate above a bottom plate, and a mounting table with a smaller plane area than the bottom plate is provided. On the bottom plate, there is an exhaust port for vacuum exhausting the interior of the processing container. Above the exhaust port, there is a shielding member at a height position lower than the mounting surface. A portion of the end surface of the shielding member, i.e., a first abutting surface, is in contact with the bottom plate. A portion of the end face of the mounting table, namely the second abutting face, abuts against each other, and an angle between a first shortest straight line and a horizontal line is greater than 35 degrees and less than 45 degrees, and the first shortest straight line connects an open end face of the shielding member adjacent to the first abutting face and the center of the exhaust port, and an angle between a second shortest straight line and a horizontal line is greater than 65 degrees and less than 80 degrees, and the second shortest straight line connects the open end face of the shielding member and the end of the exhaust port.

Description

Substrate processing device, manufacturing method thereof, and exhaust structure

The present disclosure relates to a substrate processing device, a manufacturing method thereof, and an exhaust structure.

Patent document 1 discloses a plasma processing device, which places a substrate on a mounting surface of a mounting table in a processing chamber, and applies high-frequency power for biasing the substrate to the mounting table while performing plasma processing. Partition members are provided at the four end faces of the mounting table in a rectangular shape when viewed from above, shield members are provided at the bottom of the partition members at the four corners of the mounting table, and exhaust ports are provided below the shield members. When viewing the mounting table from above, the partition members and the shield members are arranged to partially overlap, and the surrounding of the mounting table is completely surrounded by the partition members and the shield members. [Prior technical document] [Patent document]

[Patent Document 1] Japanese Patent Application Publication No. 2015-216260

The present disclosure provides a substrate processing device, a manufacturing method thereof and an exhaust structure that can suppress the intrusion of rebounding particles caused by the rotating blades of a vacuum pump connected to an exhaust port into a processing container and has excellent exhaust performance.

A substrate processing device according to one aspect of the present disclosure processes a substrate in a processing container having at least a bottom plate and a side wall. The substrate processing device is characterized in that: Inside the processing container, above the bottom plate, there is a placement surface for placing the substrate, and a placement table having a smaller surface area than the bottom plate is provided; On the bottom plate, there is provided an exhaust port for vacuum exhausting the interior of the processing container; Above the exhaust port, there is provided a shielding member at a height position lower than the placement surface; A part of the end face of the aforementioned shielding member, namely the first abutting face, and a part of the end face of the aforementioned mounting platform, namely the second abutting face, abut each other. The angle between the first shortest straight line and the horizontal line is greater than 35 degrees and less than 45 degrees. The first shortest straight line connects the open end face of the aforementioned shielding member adjacent to the aforementioned first abutting face and the center of the aforementioned exhaust port. The angle between the second shortest straight line and the horizontal line is greater than 65 degrees and less than 80 degrees. The second shortest straight line connects the aforementioned open end face of the aforementioned shielding member and the end of the aforementioned exhaust port.

According to the present disclosure, a substrate processing device and exhaust structure can be provided that "can suppress the rebounding particles caused by the rotating blades of the vacuum pump connected to the exhaust port from invading the processing container and has excellent exhaust performance."

Below, referring to the attached drawings, the substrate processing device, its manufacturing method and exhaust structure of the embodiment of the present disclosure are described. In addition, in this specification and drawings, the same symbols are sometimes given to the substantially same components and repeated descriptions are omitted.

[Implementation form of substrate processing device, its manufacturing method and exhaust structure]

Referring to Figures 1 to 5, an example of a substrate processing device, a manufacturing method thereof, and an exhaust structure of the embodiment of the present disclosure is described. Here, Figure 1 is a longitudinal cross-sectional view showing an example of a substrate processing device and an exhaust structure of the embodiment, and Figure 2 is an arrow view taken along the II direction of Figure 1. Moreover, Figure 4 is an enlarged plan view of a mounting platform and a shielding member, and Figure 5 is an arrow view taken along the V-V direction of Figure 4, and is an enlarged longitudinal cross-sectional view of the mounting platform and the shielding member.

The substrate processing device 100 shown in FIG. 1 is an inductively coupled plasma (ICP) processing device that performs various substrate processing methods on a rectangular substrate (hereinafter, simply referred to as a "substrate") G for FPD in top view. Glass is mainly used as a material for the substrate, and transparent synthetic resins are sometimes used depending on different uses. Here, the substrate processing includes film forming processing using an etching process or a CVD (Chemical Vapor Deposition) method. Examples of FPD include a liquid crystal display (LCD), an electroluminescence (EL), a plasma display panel (PDP), etc. The substrate G, in addition to having a circuit patterned on its surface, also includes a supporting substrate. Furthermore, the planar dimensions of FPD substrates are becoming larger with the change of generations, and the planar dimensions of the substrates G processed by the substrate processing apparatus 100 include, for example, at least the dimensions of about 1500 mm×1800 mm for the 6th generation to about 3000 mm×3400 mm for the 10.5th generation. Furthermore, the thickness of the substrate G is about 0.2 mm to several mm.

The substrate processing apparatus 100 shown in FIG. 1 comprises: a processing container 10 in a rectangular box shape; an exhaust structure 50; a mounting table 60 in a rectangular shape in a top view, which is arranged in the processing container 10 and mounts the substrate G; and a control unit 90. In addition, the processing container may also be in a cylindrical box shape or an elliptical cylindrical box shape, and in this form, the mounting table is also circular or elliptical, and the substrate mounted on the mounting table is also circular.

The processing container 10 is divided into two spaces, upper and lower, by a dielectric plate 11. The upper space is the antenna room, which is formed by an upper chamber 12, and the lower space is the processing area S, which is formed by a lower chamber 13.

In the processing container 10, a rectangular ring-shaped support frame 14 is provided in a manner protruding from the inner side of the processing container 10 at a position forming a boundary between the lower chamber 13 and the upper chamber 12, and a dielectric plate 11 is placed on the support frame 14. The processing container 10 is grounded via a grounding wire 13e.

The processing container 10 is formed of metal such as aluminum, and the dielectric plate 11 is formed of ceramic such as alumina (Al ₂ O ₃ ) or quartz.

A loading/unloading port 13b for loading/unloading substrates G in and out of the lower chamber 13 is provided on the side wall 13a of the lower chamber 13. The loading/unloading port 13b can be opened and closed freely by a gate valve 20. The lower chamber 13 is adjacent to a transfer chamber (not shown) containing a transfer mechanism. The gate valve 20 is controlled to open and close so that the transfer mechanism loads and unloads substrates G through the loading/unloading port 13b. In addition, a plurality of openings 13c are provided at intervals on the side wall 13a of the lower chamber 13. A quartz observation window 25 is installed in each opening 13c in a manner that blocks the opening 13c.

A support beam is provided below the dielectric plate 11 to support the dielectric plate 11. The support beam also serves as a nozzle 30. The nozzle 30 is formed of a metal such as aluminum, and can also be subjected to surface treatment by anodic oxidation. A gas flow path 31 extending in the horizontal direction is formed in the nozzle 30. The gas flow path 31 is connected to a gas outlet 32. The gas outlet 32 is extended downward and faces the processing area S located below the nozzle 30.

A gas introduction pipe 45 connected to the gas flow path 31 is connected to the upper surface of the dielectric plate 11. The gas introduction pipe 45 is airtightly connected to the supply port 12b opened in the ceiling 12a of the upper chamber 12, and is connected to the processing gas supply source 44 through the gas supply pipe 41 airtightly combined with the gas introduction pipe 45. A flow controller 43 such as a switch valve 42 and a mass flow controller is interposed in the middle of the gas supply pipe 41. The processing gas supply unit 40 is formed by the gas introduction pipe 45, the gas supply pipe 41, the switch valve 42, the flow controller 43 and the processing gas supply source 44. In addition, the gas supply pipe 41 is branched in the middle, and each branch pipe is connected to a switch valve and a flow controller and a processing gas supply source (not shown) corresponding to the type of processing gas. During plasma processing, the processing gas supplied from the processing gas supply unit 40 is supplied to the nozzle 30 through the gas supply pipe 41 and the gas introduction pipe 45, and is discharged to the processing area S through the gas discharge hole 32.

A high frequency antenna 15 is arranged in the upper chamber 12 forming the antenna room. The high frequency antenna 15 is formed by winding an antenna line 15a formed of a metal with good conductivity such as copper into a ring or spiral shape. For example, multiple ring-shaped antenna lines 15a may be arranged.

The terminal of the antenna 15a is connected to a power supply member 16 extending above the upper chamber 12, and the upper end of the power supply member 16 is connected to a power supply line 17, which is connected to a high-frequency power supply 19 via a matching device 18 for impedance matching. A high-frequency power of, for example, 13.56 MHz is applied to the high-frequency antenna 15 from the high-frequency power supply 19, thereby forming an induced electric field in the lower chamber 13. The induced electric field plasmaizes the processing gas supplied from the nozzle 30 to the processing area S to generate an inductively coupled plasma, and provides ions in the plasma to the substrate G. The high-frequency power source 19 is a source for generating plasma, and the high-frequency power source 73 connected to the mounting table 60 becomes a bias source that attracts the generated ions and gives kinetic energy. In this way, in the ion source, plasma is generated by inductive coupling, and the other power source, i.e., the bias source, is connected to the mounting table 60 to control the ion energy. In this way, the generation of plasma and the control of ion energy can be performed independently, thereby increasing the degree of freedom of the process. The frequency of the high-frequency power output from the high-frequency power source 19 is preferably set in the range of 0.1~500MHz.

The mounting table 60 includes a substrate 61 and an electrostatic chuck 66 formed on an upper surface 61 a of the substrate 61 .

The substrate 61 is rectangular in plan view and has the same plane size as the FPD placed on the mounting table 60. For example, the substrate 61 has the same plane size as the substrate G placed thereon, and the length of the long side can be set to about 1800 mm to 3400 mm, and the length of the short side can be set to about 1500 mm to 3000 mm. In contrast to the plane size, the thickness of the substrate 61 can be, for example, about 50 mm to 100 mm.

The substrate 61 is provided with a temperature control medium flow path 62a which is formed of stainless steel, aluminum, aluminum alloy, etc. and is arranged to cover the entire area of the rectangular plane. In addition, the temperature control medium flow path 62a may be provided on the electrostatic chuck 66, for example. Furthermore, the substrate 61 may be formed by a laminate of two components, rather than a single component as shown in the example.

A box-shaped pedestal 68 formed of an insulating material and having a section on the inner side is fixed to the bottom plate 13 d of the lower chamber 13 , and the mounting table 60 is mounted on the section of the pedestal 68 .

On the upper surface 61a of the base material 61, there is formed an electrostatic chuck 66 on which the substrate G is directly mounted. The electrostatic chuck 66 comprises: a dielectric film, i.e., a ceramic layer 64, which is formed by spraying ceramics such as alumina; and a conductive layer 65 (electrode), which is buried inside the ceramic layer 64 and has an electrostatic adsorption function. On the upper surface of the ceramic layer 64 is a mounting surface 64a on which the substrate G is directly mounted. The conductive layer 65 is connected to a DC power source 75 via a power supply line 74. When a switch (not shown) disposed in the power supply line 74 is turned on by the control unit 90, a DC voltage is applied from the DC power source 75 to the conductive layer 65, thereby generating a Coulomb force. The substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 66 by the Coulomb force, and is held in a state of being placed on the upper surface of the base material 61. In this way, the mounting table 60 forms a lower electrode on which the substrate G is mounted.

A temperature-control medium flow path 62a is provided on the base material 61 constituting the mounting table 60, which is serpentine to cover the entire area of the rectangular plane. At both ends of the temperature-control medium flow path 62a, there are connected: a delivery pipe 62b for supplying the temperature-control medium to the temperature-control medium flow path 62a; and a return pipe 62c for discharging the temperature-control medium that has been heated by flowing through the temperature-control medium flow path 62a. As shown in FIG1 , the delivery pipe 62b and the return pipe 62c are respectively connected to a delivery flow path 82 and a return flow path 83, and the delivery flow path 82 and the return flow path 83 are connected to a cooler 81. The cooler 81 has: a main body for controlling the temperature or discharge flow rate of the temperature-control medium; and a pump for pressurizing the temperature-control medium (both are not shown). In addition, as a temperature control medium, a refrigerant is used, and as the refrigerant, Galden (registered trademark) or Fluorinert (registered trademark) is used. The temperature control form shown in the example is a form in which the temperature control medium is circulated in the substrate 61, but it can also be a form in which a heater is built into the substrate 61 and the temperature is controlled by the heater, or it can also be a form in which the temperature control medium and the heater are used for temperature control. In addition, the heater as a resistor is formed by a compound of tungsten or molybdenum or any of these metals and aluminum oxide or titanium. In the example shown in the figure, the temperature control medium flow path 62a is formed on the substrate 61, but for example, the electrostatic chuck 66 may also have a temperature control medium flow path.

The substrate 61 is provided with a temperature sensor such as a thermocouple, and monitoring information of the temperature sensor is sent to the control unit 90 at any time. Based on the sent monitoring information, the control unit 90 performs temperature control of the substrate 61 and the base plate G. More specifically, the control unit 90 adjusts the temperature or flow rate of the temperature control medium supplied from the cooler 81 to the conveying flow path 82. The temperature control of the mounting table 60 is performed by circulating the temperature-controlled or flow-controlled temperature control medium in the temperature control medium flow path 62a. In addition, a temperature sensor such as a thermocouple may be provided on the electrostatic chuck 66, for example.

A step is formed by the outer periphery of the electrostatic chuck 66 and the substrate 61 and the upper surface of the pedestal 68. A rectangular frame-shaped focusing ring 69 is placed on the step. When the focusing ring 69 is placed on the step, the upper surface of the focusing ring 69 is set lower than the upper surface of the electrostatic chuck 66. The focusing ring 69 is made of ceramics such as alumina or quartz.

A power supply member 70 is connected to the bottom of the substrate 61. A power supply line 71 is connected to the lower end of the power supply member 70. The power supply line 71 is connected to a bias power source, i.e., a high-frequency power source 73, via a matching device 72 for impedance matching. A high-frequency power of, for example, 3.2 MHz is applied to the mounting table 60 from the high-frequency power source 73, thereby attracting ions generated by the high-frequency power source 19, which is a source for plasma generation, to the substrate G. Therefore, in the plasma etching process, the etching rate and the etching selectivity can be improved at the same time.

The control unit 90 controls the operation of the exhaust unit 55 and the like based on monitoring information sent from the components of the substrate processing device 100, such as the cooler 81 or the high-frequency power supply 19, 73, the processing gas supply unit 40, and the pressure gauge. The control unit 90 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a predetermined process according to a recipe (process recipe) stored in a memory area such as the RAM. The recipe is set with control information for the process conditions of the substrate processing device 100. The control information includes, for example, the gas flow rate or the pressure in the processing container 10, the temperature in the processing container 10 or the temperature of the substrate 61, the process time, and the like.

The recipe and the program used by the control unit 90 may be stored in a hard disk, optical disk, optical disk, etc., for example. In addition, the recipe may be stored in a portable computer-readable storage medium such as a CD-ROM, DVD, or memory card, and then installed in the control unit 90 and read out. The control unit 90 also has a user interface such as an input device such as a keyboard or mouse for inputting commands, a display device such as a display that visually displays the operating status of the substrate processing device 100, and an output device such as a printer.

Next, an example of the exhaust structure 50 according to the embodiment will be described.

A plurality of exhaust ports 13f are provided on the bottom plate 13d of the lower chamber 13. More specifically, as shown in FIG2, the four corners of the bottom plate 13d which is rectangular in top view are provided with exhaust ports 13f which are circular in top view.

Furthermore, each exhaust port 13f is connected to an exhaust pipe 51, and the exhaust pipe 51 is connected to a vacuum pump 53 such as a turbomolecular pump via a switch valve 52. The exhaust pipe 51, the switch valve 52, and the vacuum pump 53 form an exhaust portion 55. By operating the vacuum pump 53, the lower chamber 13 can be evacuated to a predetermined vacuum level during the manufacturing process.

As shown in FIG2 , a rectangular placing table 60 is provided on the inner side of the side wall 13a of the rectangular lower chamber 13 when viewed from above. The plane area of the placing table 60 is smaller than the plane area of the lower chamber 13, and a gap S1 in the shape of a rectangular frame in plane area is formed between the side wall 13a and the placing table 60. Moreover, the exhaust port 13f located at the corner of the rectangular side wall 13a when viewed from above faces the gap S1. Here, the plane area of the lower chamber 13 refers to the area in the area formed by the rectangular shape when the lower chamber 13 is viewed from above, and is not the area of the actual measured value except for, for example, the exhaust port. In addition, the plane area of the placing table 60 also refers to the area in the area formed by the rectangular shape when the placing table 60 is viewed from above.

As shown in FIG. 1 and FIG. 2 , a shielding member 58 having a generally rectangular shape when viewed from above is provided between the four corner portions 60a of the mounting platform 60 and the corner portions of the side walls 13a corresponding to the respective corner portions 60a, at a height position lower than the mounting surface 64a of the mounting platform 60. The shielding member 58 has an upper surface and a lower surface (a wide surface described later), and is formed by a plurality of end surfaces surrounding the upper surface and the lower surface at the end. Here, the "generally rectangular" shape when viewed from above in the example shown in the figure means that one corner of the square is cut into a square L-shape, but the general rectangle also includes a square or a rectangle without a notch. In addition, since the "shielding member" is a plate that blocks the flow of various gases, it can also be called a "baffle".

As shown in Fig. 2, the notch 58c provided in the shielding member 58 has two first contact surfaces 58d as a part of the end surface, and the second contact surface 60b of the corner portion 60a of the mounting platform 60 contacts the first contact surface 58d. As can be seen from Fig. 2, the shielding member 58 is configured to protrude from the corner portion 60a of the mounting platform 60 toward the outer side wall 13a in a plan view.

Among the other end surfaces constituting the shielding member 58, an end surface 58e (an example of an open end surface) adjacent to the first abutting surface 58d faces the gap S1, and another end surface 58f adjacent to the end surface 58e abuts against the inner surface of the side wall 13a.

Therefore, when the vacuum pump 53 is operated, various gases in the processing container 10 flow from the end surface 58e of the shielding member 58 to the bottom of the shielding member 58 through the rectangular frame-shaped gap S1, and flow to the exhaust pipe 51 through the exhaust port 13f located below the shielding member 58. In addition, a pressure gauge (not shown) is provided at an appropriate position of the lower chamber 13, and monitoring information of the pressure gauge is sent to the control unit 90, and the pressure in the processing container 10 is controlled by the control unit 90.

The shielding member 58 is formed of a metal such as aluminum. The shielding member 58 is placed on the upper surface of the bottom plate 13d so that the height can be freely adjusted via a plurality of (four in the example shown) height adjustment members 59. Here, the height adjustment member 59 may be formed of a cylinder unit in which a rod automatically moves forward and backward from a cylinder, or may be a manual type in which a rod member of an appropriate length is selected from a plurality of rod members of different lengths.

In addition, although not shown in the figure, in addition to the form in which the shielding member 58 is supported by a plurality of height adjustment members 59, a form in which a support member formed of a metal such as aluminum is installed on the inner surface of the corner portion of the side wall 13a and the shielding member 58 is supported by the support member may also be adopted. Since the shielding member 58 is supported by the support member such as aluminum, the shielding member 58 is grounded via the side wall 13a and the support member, and the side wall 13a is grounded by the grounding wire 13e. In this way, the shielding member 58 may be grounded or not, and may be supported inside the lower chamber 13 in a manner that allows selection of grounding and non-grounding.

An exhaust structure 50 is formed by an exhaust portion 55, a base plate 13d and a shielding member 58. The exhaust portion 55 is formed by an exhaust pipe 51, a switch valve 52 and a vacuum pump 53. The base plate 13d has an exhaust port 13f connected to the exhaust pipe 51. The shielding member 58 is arranged above the exhaust port 13f.

Thus, the substrate processing apparatus 100 refers to an apparatus that "has a rectangular frame-shaped gap S1 between the mounting table 60 and the side wall 13a of the lower chamber 13 in a plan view, has exhaust ports 13f constituting the exhaust structure 50 at four corners of the gap S1, and has shielding members 58 only at the four corners." That is, the shielding members 58 are not continuous, and gaps S1 are formed between the shielding members 58 located at the corners in a plan view.

Here, in Fig. 3A to Fig. 3D, other shapes of shielding members or other configurations of shielding members are shown. Here, Fig. 3A is a figure corresponding to Fig. 2 and is a figure showing another example of the shielding member, and Fig. 3B to Fig. 3D are figures corresponding to Fig. 2 and are figures showing another configuration example of the shielding member.

The shielding member 58A shown in FIG3A is a shielding member having a roughly circular shape when viewed from above, and a notch portion 58g is provided in a part of the circle. Moreover, when the notch portion 58g is in contact with the corner portion of the mounting table 60, the shielding member 58A is arranged above the exhaust port 13f. In this way, in addition to the rectangle (roughly rectangular) including the square shown in FIG2 , the shielding member can also be in various top-view shapes such as a circle (roughly circular) as shown in FIG3A or even an ellipse, a polygon other than a quadrilateral, etc. In addition, in addition to the circle shown in FIG2 and FIG3A , the exhaust port 13f can also be in various top-view shapes such as an ellipse, a rectangle, a polygon other than a rectangle, etc.

On the other hand, the type shown in FIG. 3B is a type in which "an exhaust port 13f is provided at a midpoint (in the example shown, the middle position of each side) between a pair of long sides (end sides) and short sides (end sides) in a rectangular frame-shaped gap S1, and a shielding member 58 is provided above each exhaust port 13f."

In contrast, the type shown in FIG3C is a type in which "an exhaust port 13f is provided at a midpoint (two locations in the middle of each side, a total of eight locations) between a pair of long sides (end sides) and short sides (end sides) in a rectangular frame-shaped gap S1, and a shielding member 58 is provided above each exhaust port 13f."

Moreover, the configuration shown in FIG3D is a configuration in which "shielding members 58 are provided at a total of six locations, namely, four corners and mid-positions of a pair of long sides (end sides) (in the example shown, the mid-positions of the long sides)". In addition, although not shown in the figure, in FIG3D, shielding members may also be provided mid-positions of a pair of short sides (end sides).

In this way, the configuration of the shielding member includes, in addition to the configuration shown in FIG. 2 or FIG. 3A where the shielding member is disposed at the corner of the rectangular frame-shaped gap S1, the configuration shown in FIG. 3B and FIG. 3C where the shielding member is disposed at the midpoint of the rectangular frame-shaped gap S1, or the configuration shown in FIG. 3D where the shielding member is disposed at both the corner and midpoint of the rectangular frame-shaped gap S1. Even in any configuration, there are a plurality of (four in FIG. 3A and FIG. 3B, eight in FIG. 3C, and six in FIG. 3D) exhaust ports 13f in the rectangular frame-shaped gap S1, and shielding members 58 and 58A are disposed above each exhaust port 13f, and adjacent shielding members are not continuous with each other. Therefore, the gap S1 can have as large a plane area as possible. Thereby, the pressure around the gap S1 or the exhaust port 13f or the pressure difference or pressure loss with the pressure of the processing space S can be reduced as much as possible, thereby ensuring the excellent exhaust performance of the exhaust structure 50.

For example, in the plasma processing device described in Patent Document 1, in a configuration in which the baffle is arranged over the entire area of the rectangular frame-shaped gap S1, the exhaust resistance (or pressure loss) may increase due to the restriction of the gap for exhaust and the exhaust characteristics may decrease due to the increase in exhaust resistance.

However, in addition to "setting the processing space S to a predetermined pressure atmosphere by operating the vacuum pump 53 such as a turbomolecular pump", for example, suspended particles are attracted into the processing space S by the vacuum pump 53. At this time, since the vacuum pump 53 has a plurality of rotating blades (not shown), there is a risk that the attracted particles bounce back on the rotating blades to generate rebound particles, and the rebound particles may invade the processing space S.

In the substrate processing device 100 shown in the example, although the shielding member 58 is provided in a manner to close the exhaust port 13f in a plan view, the shielding member 58 does not completely close the rectangular frame-shaped gap S1 in a planar manner. Moreover, as can be seen from FIG. 2 and the like, the plane area of the shielding member 58 is as small as possible. Therefore, for example, in FIG. 2 , rebounding particles can invade into the processing space S from the end surface 58e on the side of the gap S1 in the shielding member 58. Therefore, it is necessary to set the shielding member 58 so as to suppress the invasion of such rebounding particles into the processing space S. Specifically, it is a setting condition regarding the setting height level of the shielding member 58 (how high the shielding member 58 is set from the exhaust port 13f). Furthermore, regarding the setting conditions of the plane size condition of the shielding member 58 in relation to the exhaust port 13f (how much the plane size of the shielding member 58 is set larger than the plane size of the exhaust port 13f), various setting conditions of the shielding member 58 will be described below with reference to FIG. 4 and FIG. 5.

As shown in FIG4 , the shielding member 58 is a roughly square shape with one side having a length of t1 when viewed from above, and an exhaust port 13f having a diameter of φ is provided below the square shape. As shown in FIG4 and FIG5 , the center (center) of the exhaust port 13f is P1. Furthermore, the point where a straight line passing through the center P1 and along the long side direction of the rectangular side wall 13a when viewed from above, i.e., the U direction, intersects with the circumference of the exhaust port 13f (an example of the end of the exhaust port) is P2. Moreover, FIG4 is a longitudinal sectional view including the straight line L1 and cutting the shielding member 58, and FIG5 is a point where the vertical plane intersects with the end surface 58e (lower end) on the gap S1 side of the shielding member 58 is P3.

As shown in FIG5 , the angle between the first shortest straight line L2 and the horizontal line L4 (the upper surface 13d1 of the bottom plate 13d) is θ1, and the first shortest straight line L2 connects the point P3 in the end surface 58e of the shielding member 58 and the center P1 of the exhaust port 13f. That is, among the straight lines connecting the center P1 of the exhaust port 13f and the end surface 58e on the side of the gap S1 of the shielding member 58, the first shortest straight line L2 in the illustrated example is the shortest straight line.

On the other hand, the angle between the second shortest straight line L3 and the horizontal line L4 is θ2, and the second shortest straight line L3 is a straight line connecting the point P3 on the end surface 58e of the shielding member 58 and the point P2 on the circumference of the exhaust port 13f. That is, among the straight lines connecting the point P2 on the circumference of the exhaust port 13f and the end surface 58e on the gap S1 side of the shielding member 58, the second shortest straight line L3 in the illustrated example is the shortest straight line.

Furthermore, in the exhaust structure 50, the angle θ1 is set to be in the range of 35 degrees to 45 degrees, and the angle θ2 is set to be in the range of 65 degrees to 80 degrees.

The rebounding particles are subject to the resistance caused by the exhaust flow at any time. They lose energy by colliding with the wall surface more than twice, and become unable to resist the resistance caused by the exhaust flow and invade into the processing space S, and are exhausted by the vacuum pump 53. When the rebounding particles fly out from the air inlet of the vacuum pump 53 connected to the exhaust pipe 51, as long as the angle is less than 45 degrees, even if the exhaust pipe 51 is constructed to be as short as possible, they will collide with the inner wall surface of the exhaust pipe 51 more than twice within the length required by the structure. Therefore, the rebounding particles rarely fly out from the exhaust port 13f. In addition, compared with the end of the exhaust port 13f, the rebounding particles with a smaller angle are more likely to invade from the center. Therefore, regarding the position of the end face 58e of the shielding member 58, as long as the angle θ1 is less than 45 degrees, the invasion of the rebounding particles can be prevented.

In addition to the above, in order to balance the exhaust efficiency and more reliably suppress the intrusion of rebounding particles, the width is set to 10 degrees and the angle θ1 is set to a range of 35 degrees to 45 degrees. This setting suppresses the intrusion of rebounding particles from the vicinity of the center of the exhaust port 13f into the processing space S.

On the other hand, when the rebounding particles fly out from the air inlet of the vacuum pump 53, as long as the angle is greater than 80 degrees, even from the end of the exhaust port 13f, they will not collide with the inner wall of the exhaust pipe 51 and can fly out from the exhaust port 13f. Therefore, regarding the position of the end face 58e of the shielding member 58, even if the angle θ1 falls within the range of greater than 35 degrees and less than 45 degrees, there is a possibility that the rebounding particles with an angle of greater than 80 degrees will invade the processing space S from the end of the exhaust port 13f. Therefore, as for the position of the end face 58e of the shielding member 58, in addition to the numerical range of θ1, by setting θ2 to less than 80 degrees, the invasion of the rebounding particles can be prevented.

In addition to the above, in order to balance the exhaust efficiency and more reliably suppress the invasion of rebounding particles, the width is set to 15 degrees and the angle θ2 (the flying angle of the rebounding particles) is set to a range of 65 degrees to 80 degrees. With this setting, the rebounding particles are rebounded at a sharp angle by the shielding member 58, and as a result, the invasion into the processing space S is eliminated. In addition, the energy is lost due to the second collision in the exhaust pipe 51, and the vacuum pump 53 is effectively exhausted.

In FIG. 5 , an embodiment is considered in which the height of the entire mounting table 60 is set to t3, the height from the exhaust port 13f to the shielding member 58 is set to t4, and t1-φ is set to t5, for example, φ=about 280mm, t5=about 20mm~50mm. In this embodiment, when the angles θ1 and θ2 are set within the above-mentioned numerical range, t3-t4 can be set to less than 20mm. In this way, t3-t4 is set to less than 20mm, thereby suppressing the decline in the exhaust characteristics of the exhaust structure 50. Moreover, t5 is set to about 20mm~50mm (for example, 40mm), thereby suppressing the invasion of rebound particles into the processing space S without reducing the exhaust characteristics of the exhaust structure 50.

In addition, in FIG. 5 , the wide surface 58a of the shielding member 58 that is not opposite to the exhaust port 13f is a smooth surface without depressions (concavities and convexities). Here, the smooth surface without depressions (concavities and convexities) includes the case where the head of the bolt does not protrude from the wide surface 58a in addition to the case where the surface roughness is relatively small. When the shielding member 58 having a thickness of about 10 mm is fixed to the supporting member, etc. by bolts, etc. (not shown), a column groove (not shown) having a depth of about 3 mm is provided on the wide surface 58a. Moreover, the head of the bolt is received in the column groove and the surface of the column groove is blocked, thereby forming a smooth surface where the head of the bolt does not protrude from the wide surface 58a.

In this way, the wide surface 58a opposite to the processing space S of the shielding member 58 is a smooth surface without depressions, thereby suppressing the adhesion of deposits to the wide surface 58a or the generation of particles in the wide surface 58a.

Moreover, in FIG. 5 , the wide surface 58b of the shielding member 58 opposite to the exhaust port 13f is a roughened surface with micro-concave and convex surfaces. Here, the roughening process includes sandblasting or thermal spraying. In this way, the wide surface 58b of the shielding member 58 opposite to the exhaust port 13f is a roughened surface, whereby the rebounding particles colliding with the wide surface 58b repeatedly collide with the micro-concave and convex surfaces several times, which can effectively eliminate the energy of the rebounding particles. Therefore, the rebounding particles can be more effectively suppressed from invading the processing space S.

In the manufacturing method of the substrate processing device 100, the dimensions of the exhaust port 13f or the shielding member 58 are set so that the angles θ1 and θ2 are respectively within the above-mentioned numerical ranges, and the substrate processing device 100 is manufactured through an angle setting process of setting the installation height level of the shielding member 58.

[Study on various performances and manufacturing costs] The inventors of the present invention simulated a substrate processing device (embodiment) having a shielding member as shown in FIG. 2, FIG. 4 and FIG. 5 and two types of substrate processing devices as comparison examples, and conducted a study while comparing the rebound particle suppression performance and exhaust performance of each device, and also conducted a cost comparison by estimating the manufacturing cost of the shielding member.

Here, Comparative Example 1 is a substrate processing device that does not have a shielding member at the four corners of the rectangular frame-shaped gap when viewed from above, but has a shielding member with four sides along a pair of long sides and short sides. On the other hand, Comparative Example 2 is a substrate processing device that has a shielding member at the four corners of the rectangular frame-shaped gap when viewed from above, and has a shielding member with four sides along a pair of long sides and short sides, as shown in Patent Document 1. Here, Comparative Examples 1 and 2 are the same as the embodiment, and have a circular exhaust port in the four corners of the rectangular frame-shaped gap when viewed from above. The results of the investigation are shown in Table 1 below.

Comparative Example 1 has a strip-shaped shielding member, but does not have a shielding member above the exhaust port at the corner. Therefore, the rebound particle suppression performance is reduced. In addition, compared with the embodiment having shielding members only at the four corners, the surface area of the shielding member is more than three times larger, and the manufacturing cost of the shielding member becomes relatively expensive.

On the other hand, since Comparative Example 2 has shielding members with all sides and shielding members at corners, although the rebound particle suppression performance is high, the exhaust performance is low. In addition, the surface area of the shielding member is larger than that of Comparative Example 1, which is more than four times that of the embodiment, and the manufacturing cost of the shielding member becomes more expensive.

Compared with Comparative Examples 1 and 2, the embodiment has excellent exhaust performance because it only has a shielding member at the corner. In addition, as described with reference to FIG. 4 and FIG. 5 , the installation height level or plane size of the shielding member is clearly defined in relation to the exhaust port, thereby also having excellent rebound particle suppression performance. Moreover, the shielding member is limited to the corner, thereby making the surface area of the shielding member as small as possible, and the manufacturing cost of the shielding member is much cheaper than that of Comparative Examples 1 and 2.

Other embodiments may be formed by combining other components with the above-mentioned embodiments, and the present disclosure is not limited to any of the components shown here. In this regard, changes may be made within the scope of the present disclosure and may be appropriately determined according to the application.

For example, although the substrate processing apparatus 100 shown in the figure is described as an inductively coupled plasma processing apparatus having a dielectric window, it may be an inductively coupled plasma processing apparatus having a metal window instead of the dielectric window, or may be a plasma processing apparatus of other types. Specifically, they include Electron Cyclotron Resonance Plasma (ECP) or Helicon Wave Plasma (HWP), Capacitively Coupled Plasma (CCP). In addition, Microwave Activated Surface Wave Plasma (SWP) can be listed. These plasma processing devices include ICP and can independently control the ion flux and ion energy, and can freely control the etching shape or selectivity, and can obtain an electron density as high as 10 ¹¹ ~10 ¹³ cm ^-3 .

Furthermore, although the vacuum pump 53 is described as a turbomolecular pump, the present disclosure can be applied to other types of vacuum pumps as long as the rebound particles can fly out from the suction port of the vacuum pump 53.

10: Processing container 13a: Side wall 13d: Bottom plate 13f: Exhaust port 58: Shielding member 58d: First contact surface 58e: End surface (open end surface) 60: Loading table 60b: Second contact surface 64a: Loading surface 100: Substrate processing device G: Substrate L2: First shortest straight line L3: Second shortest straight line L4: Horizontal line

[Figure 1] is a longitudinal cross-sectional view showing an example of a substrate processing device and an exhaust structure in an implementation form.

[Figure 2] Arrow view of direction II in Figure 1.

[Figure 3A] A figure corresponding to Figure 2, and showing another example of a shielding member.

[Figure 3B] A figure corresponding to Figure 2, and showing another example of the arrangement of the shielding member.

[Figure 3C] is a figure corresponding to Figure 2 and is a figure showing another configuration example of the shielding member.

[Figure 3D] is a figure corresponding to Figure 2 and is a figure showing another configuration example of the shielding member.

[Figure 4] Enlarged plan view of the mounting platform and shielding components.

[Figure 5] The V-V arrow view of Figure 4, and an enlarged longitudinal section view of the mounting platform and the shielding component.

13a: Side wall

13d: Base plate

13d1: Above

13f: Exhaust port

50: Exhaust structure

51: Exhaust pipe

58: Shielding components

58a: Wide

58b: Wide surface

58e: End face

60: Loading platform

64a:Placement surface

S1: Gap

Claims (14)

A substrate processing device processes a substrate in a processing container having at least a bottom plate and a side wall. The substrate processing device is characterized in that: A loading surface for loading the substrate is provided inside the processing container above the bottom plate, and a loading table having a smaller plane area than the bottom plate is provided; An exhaust port for vacuum exhausting the inside of the processing container is provided on the bottom plate; A shielding member is provided above the exhaust port at a height position lower than the loading surface; A first contact surface, a part of the end surface of the shielding member, and a second contact surface, a part of the end surface of the loading table, contact each other; The angle between the first shortest straight line and the horizontal line is greater than 35 degrees and less than 45 degrees, and the first shortest straight line connects the open end surface of the shielding member adjacent to the first contact surface and the center of the exhaust port; The angle between the second shortest straight line and the horizontal line is greater than 65 degrees and less than 80 degrees. The second shortest straight line connects the aforementioned open end surface of the aforementioned shielding member and the end of the aforementioned exhaust port. The substrate processing device of claim 1, wherein, the top view shape of the aforementioned bottom plate and the aforementioned mounting platform is rectangular, the aforementioned exhaust ports are provided at the four corners of the aforementioned bottom plate, the aforementioned shielding member is configured to protrude outward from the corner of the aforementioned mounting platform, the aforementioned shielding members are not continuous, and there is a gap between the aforementioned end face of the aforementioned mounting platform and the aforementioned side wall when viewed from above. The substrate processing device of claim 1, wherein, the top view shape of the aforementioned base plate and the aforementioned mounting platform is a rectangle, the aforementioned exhaust port is provided at the midpoint of the four end sides of the aforementioned rectangle of the aforementioned base plate, each aforementioned shielding member is not continuous, and there is a gap between the aforementioned end face of the aforementioned mounting platform and the aforementioned side wall when viewed from above. A substrate processing device as claimed in any one of claims 1 to 3, wherein the shielding member is supported in a height-adjustable manner by a height-adjusting member disposed around the exhaust port. A substrate processing device as claimed in any one of claims 1 to 3, wherein the top view shape of the shielding member is rectangular, approximately rectangular, circular or approximately circular, and the top view shape of the exhaust port is circular. A substrate processing device as claimed in any one of claims 1 to 3, wherein, the top view shape of the shielding member is rectangular or substantially rectangular, the top view shape of the exhaust port is rectangular. A substrate processing device as claimed in any one of claims 1 to 3, wherein the wide surface of the shielding member opposite to the exhaust port is a roughened surface. A substrate processing device as claimed in any one of claims 1 to 3, wherein the wide surface of the shielding member that is not opposite to the exhaust port is a smooth surface without depressions. A substrate processing device as claimed in any one of claims 1 to 3, wherein, an exhaust pipe is provided below the exhaust port, and a vacuum pump with a rotary blade is connected to the exhaust pipe. An exhaust structure is formed by a member having an exhaust port and a shielding member, wherein the exhaust structure is characterized in that the shielding member is disposed above the exhaust port, the angle between the shortest straight line connecting the center of the exhaust port and the end of the shielding member and the horizontal line is greater than 35 degrees and less than 45 degrees, and the angle between the shortest straight line connecting the end of the exhaust port and the end of the shielding member and the horizontal line is greater than 70 degrees and less than 80 degrees. As in claim 10, the exhaust structure, wherein, the wide surface of the shielding member opposite to the exhaust port is a roughened surface. As in the exhaust structure of claim 10 or 11, the wide surface of the shielding member that is not opposite to the exhaust port is a smooth surface without depressions. As in claim 10 or 11, the exhaust structure, wherein, an exhaust pipe is provided below the aforementioned exhaust port, and a vacuum pump with a rotary blade is connected to the aforementioned exhaust pipe. A method for manufacturing a substrate processing device, wherein the substrate is processed in a processing container having at least a bottom plate and a side wall, wherein a loading surface for loading the substrate is provided inside the processing container and above the bottom plate, and a loading table having a smaller plane area than the bottom plate is provided, wherein an exhaust port for vacuum exhausting the inside of the processing container is provided on the bottom plate, and a shielding member is provided above the exhaust port at a height position lower than the loading surface, wherein a part of the end surface of the shielding member, namely a first abutting surface, and a part of the end surface of the loading table, namely a second abutting surface, abut against each other, wherein the method for manufacturing the substrate processing device comprises the following steps: The angle between the first shortest straight line and the horizontal line is set to be greater than 35 degrees and less than 45 degrees, and the angle between the second shortest straight line and the horizontal line is set to be greater than 65 degrees and less than 80 degrees. The first shortest straight line connects the open end surface of the shielding member adjacent to the first abutting surface and the center of the exhaust port, and the second shortest straight line connects the open end surface of the shielding member and the end of the exhaust port.

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