TWI884631B - Atomic layer deposition device and method for manufacturing atomic layer deposition - Google Patents

Abstract

An atomic layer deposition device includes a gas injection module and a gas nozzle. The gas injection module includes a plurality of gas pipelines. The gas nozzle is connected to the gas injection module, and the gas nozzle includes an air inlet portion, a cavity and a spray portion. The cavity has an air inlet and an air outlet. The cavity is connected to the air inlet through the air inlet, and the air inlet is smaller than the air outlet. The spraying portion is connected to the cavity through the air outlet, and the spraying portion includes a plurality of spraying holes. The gas pipelines are distributed in an annular manner. A method for manufacturing atomic layer deposition film is also provided.

Description

Atomic layer deposition device and atomic layer deposition manufacturing method

The present invention relates to an atomic layer deposition device, in particular to an atomic layer deposition device having multiple air inlet pipes.

The existing atomic layer deposition device includes a chamber, upper and lower electrodes, a gas nozzle, a stage, an exhaust system and a precursor gas disk assembly. The gas nozzle is a necessary component for depositing thin films, which can transport precursor gases to form thin films. The precursor (gas) will be evenly dispersed to the substrate surface through the gas pipeline and the chamber air inlet through the gas nozzle.

Generally speaking, in order to improve the uniformity of the gas field for delivering the precursor to the substrate, the aperture size, aperture shape and aperture position of the gas nozzle are generally adjusted to evenly distribute the reaction precursor to the substrate surface.

However, with the increasing industrial requirements, the requirements for film uniformity are becoming higher and higher, and the structural design of gas nozzles is becoming more complex. For example, the design of hole size, shape and distribution increases the manufacturing cost of gas nozzles and the manufacturing cost of engineering. If the holes are too small, it is easy for the holes to be blocked, resulting in uneven airflow and oscillating abnormal discharge. This will cause dust and uneven film thickness during film deposition, which is not conducive to film growth.

Therefore, how to improve the efficiency of the thin film deposition process and overcome the above-mentioned defects by improving the structural design of the gas pipeline, cavity and gas nozzle has become one of the important issues that the industry wants to solve.

The technical problem to be solved by the present invention is to provide an atomic layer deposition device to address the shortcomings of the existing technology. Through the structural design of the gas injection module and the gas nozzle, the uniformity of the gas field entering the cavity is improved, the aperture of the gas nozzle is made consistent, the difficulty of manufacturing the gas nozzle is reduced, and the production cost is reduced. In addition, through the structural design of the gas injection module and the gas nozzle, the nozzle hole can be prevented from being blocked, which causes the phenomenon of dust and uneven film thickness in thin film deposition.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide an atomic layer deposition device, including a gas injection module and a gas nozzle. The gas injection module includes a plurality of gas pipelines. The gas nozzle is connected to the gas injection module, and the gas nozzle includes an air inlet, a cavity and a spraying part. The cavity has an air inlet and a corresponding air outlet, and the cavity is connected to the air inlet through the air inlet, and the air inlet is smaller than the air outlet. The spraying part is connected to the cavity through the air outlet, and the spraying part includes a plurality of spray holes. The plurality of gas pipelines are spaced in a ring-shaped manner.

According to a feasible implementation scheme, multiple gas pipelines are arranged symmetrically with the center of the ring as the point.

According to a feasible implementation scheme, the multiple gas pipelines include at least one reaction gas pipeline and at least one inert gas pipeline.

According to a feasible implementation scheme, there are six gas pipelines, including four reaction gas pipelines and two inert gas pipelines. The connecting line of the two inert gas pipelines passes through the center of the ring, and there are two reaction gas pipelines on both sides of the connecting line.

According to a feasible implementation scheme, the cavity is conical, including an oblique shoulder portion and an upright portion, the oblique shoulder portion is connected to the upright portion, the oblique shoulder portion has an air inlet, and the upright portion has an air outlet.

The present invention also provides a manufacturing method of atomic layer deposition, which is applicable to the atomic layer deposition device as described above. The atomic layer deposition device also includes a reaction chamber and a carrier, wherein the gas nozzle and the carrier are located in the reaction chamber, and a work object is arranged on the carrier. The manufacturing method includes: evacuating the reaction chamber. Delivering a first inert gas through at least one inert gas pipeline among a plurality of gas pipelines. Delivering a first precursor gas through a first reaction gas pipeline among a plurality of gas pipelines, and the first precursor gas forms a first atomic layer film on the surface of the work object. Delivering a second inert gas through at least one inert gas pipeline. Delivering a second precursor gas through a second reaction gas pipeline among a plurality of gas pipelines, and the second precursor gas forms a second atomic layer film on the surface of the first atomic layer film. A third inert gas is delivered through at least one inert gas pipeline.

According to a feasible implementation scheme, after delivering the third inert gas, it also includes: delivering the first precursor gas through the first reaction gas pipeline, and the first precursor gas forms another first atomic layer film on the surface of the second atomic layer film. Delivering the second inert gas through at least one inert gas pipeline. Delivering the second precursor gas through the second reaction gas pipeline, and the second precursor gas forms another second atomic layer film on the surface of another first atomic layer film. Delivering the third inert gas through at least one inert gas pipeline.

According to a feasible implementation scheme, when the first inert gas is transported through at least one inert gas pipeline, the pressure in the reaction chamber is controlled at 0.1 Torr-30 Torr.

One of the beneficial effects of the present invention is that the atomic layer deposition device provided by the present invention can improve the uniformity of the gas field in the cavity, make the aperture of the spray hole consistent, reduce the difficulty of manufacturing the gas nozzle, reduce the design cost, and reduce the cost of thin film production through the technical solutions of "the cavity has an air inlet and a corresponding air outlet, the cavity is connected to the air inlet part through the air inlet, and the air inlet is smaller than the air outlet", "a plurality of gas pipelines are spaced in a ring manner" and "the spray part is connected to the cavity through the air outlet, and the spray part includes a plurality of spray holes".

Furthermore, according to some embodiments, the atomic layer deposition device can avoid the problem of nozzle blockage, thereby avoiding the phenomenon of dust and uneven film thickness caused by thin film deposition.

According to the embodiment of the manufacturing method of atomic layer deposition of the present invention, the uniformity of the gas field in the cavity is improved, the diameter of the nozzle is made consistent, the difficulty of manufacturing the gas nozzle is reduced, and the production cost of the thin film is reduced, and the problem of nozzle blockage is avoided, thereby avoiding the technical effect of dust and uneven film thickness caused by thin film deposition.

To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not used to limit the present invention.

Z: Atomic layer deposition device

100: Manufacturing method of atomic layer deposition

1: Gas injection module

11: Gas pipeline

11a: Inert gas pipeline

11b: Inert gas pipeline

11c: Reaction gas pipeline, first reaction gas pipeline

11d: Reaction gas pipeline

11e: Reaction gas pipeline

11f: Reaction gas pipeline, second reaction gas pipeline

2: Gas nozzle

21: Air intake

22: Cavity

221: Oblique shoulders

222: Upright part

223: Air intake

224: Exhaust port

23: Spraying Department

231: Sprinkler hole

3:Reaction room

4: Carrier

5: Work objects

6: Pump

C: Center

L:Connection

S1: Vacuum the reaction chamber

S2: Transporting a first inert gas through at least one inert gas pipeline among multiple gas pipelines

S3: Transporting the first precursor gas through the first reaction gas pipeline among multiple gas pipelines

S4: Transporting a second inert gas through at least one inert gas pipeline

S5: Transporting the second precursor gas through the second reaction gas pipeline among the multiple gas pipelines

S6: Transporting a third inert gas through at least one inert gas pipeline

θ: Tilt angle

Figure 1 is a schematic diagram of an atomic layer deposition device of an embodiment of the present invention.

Figure 2 is a cross-sectional schematic diagram of the gas injection module in the embodiment shown in Figure 1.

Figure 3 is a schematic diagram of the process of the atomic layer deposition manufacturing method of an embodiment of the present invention.

The following is a specific embodiment to illustrate the implementation of the "atomic layer deposition device and atomic layer deposition manufacturing method" disclosed in the present invention. Technical personnel in this field can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the attached drawings of the present invention are only for simple schematic illustrations and are not depicted according to actual sizes. Please note in advance. The following implementation will further explain the relevant technical content of the present invention in detail, but the disclosed content is not used to limit the scope of protection of the present invention.

Please refer to Figures 1 and 2. Figure 1 is a schematic diagram of an atomic layer deposition device of an embodiment of the present invention. Figure 2 is a cross-sectional schematic diagram of the gas injection module 1 in the embodiment shown in Figure 1, viewed from a top view.

The atomic layer deposition device includes a gas injection module 1 and a gas nozzle 2. The gas injection module 1 includes a plurality of gas pipelines 11. The gas nozzle 2 is connected to the gas injection module 1, and the gas nozzle 2 includes an air inlet 21, a cavity 22, and a spraying portion 23. The cavity 22 has an air inlet 223 and a corresponding air outlet 224. The cavity 22 is connected to the air inlet 21 via the air inlet 223, and the air inlet 223 is smaller than the air outlet 224. The spraying portion 23 is connected to the cavity 22 via the air outlet 224, and the spraying portion 23 includes a plurality of spray holes 231. The plurality of gas pipelines 11 are spaced apart in a ring shape.

In the embodiment shown in FIG. 1 , the plurality of gas pipelines 11 have an inclination angle θ with respect to a plane, but the present invention is not limited thereto. According to some embodiments, the plurality of gas pipelines 11 are located on the same horizontal plane. The plurality of gas pipelines 11 include a reaction gas pipeline (see FIG. 2 , such as gas pipelines 11c-11f) and an inert gas pipeline (see FIG. 2 , such as gas pipeline 11a or gas pipeline 11b). In this embodiment, there are six gas pipelines 11, including four reaction gas pipelines 11c-11f and two inert gas pipelines 11a-11b. The connecting line L of the pipe openings of the two inert gas pipelines 11a-11b passes through the center C of the ring, and there are two reaction gas pipelines on both sides of the connecting line L (for example, reaction gas pipelines 11c-11d, and reaction gas pipelines 11e-11f). According to the embodiment shown in FIG. 2 , the gas pipelines 11 are curved tubes, and are arranged symmetrically with the center C of the ring as a point. However, the present invention is not limited to this, for example, the gas pipeline 11 may also be a straight tube. According to some embodiments, there are eight gas pipelines 11, including six reaction gas pipelines and two inert gas pipelines (not shown). According to the embodiment shown in FIG. 1 , the cavity 22 is conical, including an oblique shoulder portion 221 and an upright portion 222 , the oblique shoulder portion 221 is connected to the upright portion 222 , the oblique shoulder portion 221 has an air inlet 223 , and the upright portion 222 has an air outlet 224 .

According to the embodiment shown in FIG. 1 and FIG. 2, multiple gas pipelines 11 are used to inject precursors (gas) and inert gases (such as nitrogen or argon) respectively. The precursors and inert gases will generate cyclones in the space inside the cavity 22, thereby making the precursors present a random ring-shaped gas flow, eliminating the air intake (or concentrated air intake) only at a specific position, and spraying through the spraying part 23. The structure of multiple gas pipelines 11 allows each precursor to be independently injected into the cavity 22, and will not react with each other in the same gas pipeline to affect the film manufacturing process.

Please refer to FIG3 , which is a schematic flow chart of an atomic layer deposition manufacturing method 100 of an embodiment of the present invention. The atomic layer deposition manufacturing method 100 is applicable to the atomic layer deposition device as described above, and the atomic deposition device further includes a reaction chamber 3 and a carrier 4. The gas nozzle 2 and the carrier 4 are located in the reaction chamber 3. A workpiece 5 (see FIG1 ) is placed on the carrier 4. The reaction chamber 3 is connected to a pump 6. The manufacturing method 100 includes step S1: evacuating the reaction chamber 3. Step S2: delivering a first inert gas through at least one inert gas pipeline 11a-11b among the multiple gas pipelines 11. Step S3: The first precursor gas is transported through the first reaction gas pipeline 11c among the multiple gas pipelines 11, and the first precursor gas forms a first atomic layer film on the surface of the workpiece 5. Step S4: The second inert gas is transported through at least one inert gas pipeline 11a-11b. Step S5: The second precursor gas is transported through the second reaction gas pipeline 11f among the multiple gas pipelines 11, and the second precursor gas forms a second atomic layer film on the surface of the first atomic layer film. Step S6: The third inert gas is transported through at least one inert gas pipeline.

The first inert gas, the second inert gas, and the third inert gas may be the same or different, and the present invention is not limited thereto. The following describes the manufacturing method 100 of atomic layer deposition according to the embodiments shown in FIG. 1 and FIG. 2 .

In step S1, the reaction chamber 3 and the cavity 22 are evacuated. In step S2, an inert gas (such as argon or nitrogen) is introduced through two inert gas lines 11a-11b. According to some embodiments, the pressure of the cavity 22 is maintained between 0.1 Torr and 30 Torr. In step S3, a first precursor gas is introduced (for example, introduced into the cavity 22 through a first reaction gas line 11c), so that the precursor gas forms a first atomic layer film on the surface of the work object 5 (such as a wafer), so that functional groups are generated on the surface of the work object 5. In step S4: a second inert gas (such as argon or nitrogen) is transported through two inert gas lines 11a-11b to remove excess first precursor gas in the cavity 22. In step S5, the second precursor gas is introduced (for example, into the chamber 22 via the second reaction gas pipeline 11f), and the second precursor gas forms a second atomic layer film on the surface of the first atomic layer film. In step S6, the third inert gas is delivered via the two inert gas pipelines 11a-11b to remove excess second precursor gas.

According to some embodiments, users can introduce other precursor gases (or the first precursor gas and the second precursor gas) through other reaction gas pipelines (such as reaction gas pipelines 11d-11e) to achieve the required film composition and thickness, which is not limited by the present invention.

Please refer to Figure 1 again. According to some embodiments, after step S6, the user can repeat steps S3 to S6 until the desired film thickness is achieved.

One of the beneficial effects of the present invention is that the atomic layer deposition device provided by the present invention can improve the uniformity of the gas field in the cavity, make the aperture of the spray hole consistent, reduce the difficulty of manufacturing the gas nozzle, reduce the design cost, and reduce the cost of thin film production through the technical solutions of "the cavity has an air inlet and a corresponding air outlet, the cavity is connected to the air inlet part through the air inlet, and the air inlet is smaller than the air outlet", "a plurality of gas pipelines are spaced in a ring manner" and "the spray part is connected to the cavity through the air outlet, and the spray part includes a plurality of spray holes".

Furthermore, according to some embodiments, the atomic layer deposition device can avoid the problem of nozzle blockage, thereby avoiding the phenomenon of dust and uneven film thickness caused by thin film deposition.

According to the embodiment of the manufacturing method of atomic layer deposition of the present invention, the uniformity of the gas field in the cavity is improved, the diameter of the nozzle is made consistent, the difficulty of manufacturing the gas nozzle is reduced, and the production cost of the thin film is reduced, and the problem of nozzle blockage is avoided, thereby avoiding the technical effect of dust and uneven film thickness caused by thin film deposition.

The above disclosed contents are only the preferred feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the contents of the specification and drawings of the present invention are included in the scope of the patent application of the present invention.

Z: Atomic layer deposition device

1: Gas injection module

11: Gas pipeline

2: Gas nozzle

21: Air intake

22: Cavity

221: Oblique shoulders

222: Upright part

223: Air intake

224: Exhaust port

23: Spraying Department

231: Sprinkler hole

3:Reaction room

4: Carrier

5: Work objects

6: Pump

θ: Tilt angle

Claims (6)

An atomic layer deposition device, comprising: A gas injection module, comprising a plurality of gas pipelines, each of which has an inclination angle with a plane; and A gas nozzle, connected to the gas injection module, the gas nozzle comprising: An air inlet; A cavity, having an air inlet and an opposite air outlet, the cavity being connected to the air inlet via the air inlet, the air inlet being smaller than the air outlet; and A spraying portion, connected to the cavity via the air outlet, the spraying portion comprising a plurality of spraying holes; Wherein, the plurality of gas pipelines are spaced apart in a ring shape, and are arranged symmetrically with a center of the ring as a point; Wherein, the plurality of gas pipelines are six, including four reaction gas pipelines and two inert gas pipelines, the connecting line of the pipe openings of the two inert gas pipelines passes through the center, and the two sides of the connecting line have two reaction gas pipelines respectively; and Wherein, among the four reaction gas pipelines, at least two of the reaction gas pipelines transport the same gas. An atomic layer deposition device as described in claim 1, wherein the chamber is conical in shape, including an inclined shoulder portion and a vertical portion, the inclined shoulder portion is connected to the vertical portion, the inclined shoulder portion has the air inlet, and the vertical portion has the air outlet. A manufacturing method of atomic layer deposition is applicable to the atomic layer deposition device as described in claim 1, the atomic layer deposition device further includes a reaction chamber and a carrier, the gas nozzle and the carrier are located in the reaction chamber, and a work object is arranged on the carrier, the manufacturing method includes: Evacuating the reaction chamber; Transporting a first inert gas through the two inert gas pipelines among the four gas pipelines; Transporting a first precursor gas through the two first reaction gas pipelines among the four gas pipelines, the first precursor gas forms a first atomic layer film on the surface of the work object; Transporting a second inert gas through the two inert gas pipelines; A second precursor gas is delivered through two second reaction gas pipelines among the four gas pipelines, and the second precursor gas forms a second atomic layer film on the surface of the first atomic layer film; and a third inert gas is delivered through the two inert gas pipelines. The manufacturing method of atomic layer deposition as described in claim 3, after delivering the third inert gas, further includes: delivering the first precursor gas through the two first reaction gas pipelines, the first precursor gas forming another first atomic layer film on the surface of the second atomic layer film; delivering the second inert gas through the two inert gas pipelines; delivering the second precursor gas through the two second reaction gas pipelines, the second precursor gas forming another second atomic layer film on the surface of the other first atomic layer film; and delivering the third inert gas through the two inert gas pipelines. The manufacturing method of atomic layer deposition as described in claim 3, wherein when the first inert gas is transported through the two inert gas pipelines, the pressure in the reaction chamber is controlled at 0.1 Torr-30 Torr. A manufacturing method of atomic layer deposition as described in claim 3, wherein the chamber is conical, including an inclined shoulder portion and a vertical portion, the inclined shoulder portion is connected to the vertical portion, the inclined shoulder portion has the air inlet, and the vertical portion has the air outlet.

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