TWI881673B - Wafer measuring method - Google Patents

Abstract

A wafer measuring method is proposed. The wafer measuring method includes a first positioning step, a second positioning step, a probe lowering step and a measuring step. The first positioning step includes controlling a carrier device to move, and let an initial positioning point of the wafer enters an image frame of an image capturing device. The second positioning step includes controlling the carrying device to align the image frame with a measuring point adjacent to the initial positioning point, and storing a relative position corresponding to the carrying device and a test position corresponding to the measuring point. The probe lowering step includes controlling the movement of the probe to contact the measuring point to create a test loop. The measuring step includes measuring the measuring point through the test loop to generate a measurement value. Thus, the wafer measuring method of the present disclosure can provide great accuracy for measuring the wafer.

Description

Wafer measurement method

The present invention relates to a measurement method, and in particular to a wafer measurement method.

In general wafer measurement, each measurement requires the inspector to manually control the probe to the test point before the measurement can be performed. In addition to the problem of inaccurate measurement position leading to incorrect measurement results, the manual measurement method also consumes a lot of time and manpower. In addition, when measuring wafers with extremely small die sizes, manual measurement cannot ensure the accuracy of wafer measurement.

In view of this, there is currently a lack of a wafer measurement method and system on the market that can automatically measure and be applied to small-sized dies, so relevant industries are looking for solutions.

The purpose of the present invention is to provide a wafer measurement method and system thereof, which can increase the accuracy of positioning the test point by performing secondary positioning of the test point and recording the test position through the first positioning step and the second positioning step, and can provide a controller to automatically perform subsequent wafer testing.

According to an implementation of the method aspect of the present invention, a wafer measurement method is provided, comprising a first positioning step, a second positioning step, a lower needle position moving step, a lower needle step and a measuring step. The first positioning step comprises driving a controller to control a carrier device carrying a wafer to move so that an initial positioning point of the wafer enters an image frame of an image capture device to store an initial positioning point position corresponding to the carrier device. The second positioning step comprises driving the controller to align the image frame with at least one point to be tested adjacent to the initial positioning point to store a relative position corresponding to the carrier device and at least one test position corresponding to at least one point to be tested. The lower needle position moving step comprises driving the controller to control the carrier device to move to a relative position, and driving the controller to control at least one probe to move horizontally, corresponding to at least one test position. The needle lowering step includes the drive controller controlling at least one probe to move vertically downward to contact at least one point to be tested to generate a test loop. The measuring step includes the drive controller measuring at least one point to be tested through the test loop to generate a measurement value.

Other embodiments of the aforementioned embodiment are as follows: the initial positioning point is located on one side of a cutting line of the wafer.

Other embodiments of the aforementioned implementation method are as follows: The wafer measurement method further includes a wafer angle correction step. The wafer angle correction step includes driving the controller to control the movement of the carrier so that a cutting path of the wafer carried by the carrier enters the image screen, and two positioning points are established according to the cutting path, and the angle positioning of the wafer is completed by the two positioning points.

Other embodiments of the above-mentioned embodiment are as follows: The wafer measurement method further includes a judgment step. The judgment step includes the drive controller judging whether the measurement value is within a specification range to generate a judgment result. Wherein, when the judgment result is yes, the drive controller executes an output step to output the measurement value.

Other implementations of the aforementioned implementation method are as follows: When the judgment result is negative, the driving controller executes a lifting step to control the supporting device to move vertically upward by a lifting distance, and executes a measurement step.

Other embodiments of the aforementioned embodiment are as follows: the lifting distance is between 1 micron and 20 microns.

Other embodiments of the aforementioned implementation method are as follows: When the number of at least one point to be tested is one, the wafer measurement method further includes a contact confirmation step. The contact confirmation step includes the drive controller controlling at least one probe to vertically rise away from the point to be tested, and then vertically descend close to the point to be tested, and the drive controller controls the image capture device to capture the image frame to generate a contact image, and the drive controller compares the contact image with an initial image to confirm whether the wafer is displaced to generate a confirmation result, and confirms whether the probe contacts the point to be tested based on the confirmation result. Wherein, when the confirmation result is yes, the drive controller continues to execute the measurement step. When the confirmation result is no, the drive controller executes a warning step and issues a warning notification.

Other embodiments of the aforementioned implementation method are as follows: the initial image is an image generated by the driving controller controlling the image capture device to capture an image frame before the controller controls at least one of the probes to move vertically downward.

Other embodiments of the above-mentioned embodiment are as follows: when the diameter of the grain of the wafer is less than 50 microns, and the number of at least one test point is three, the number of at least one probe is four, and the probe lowering step further includes a first probe lowering step, a first compensation step, a second probe lowering step, and a second compensation step. The first probe lowering step includes the drive controller controlling two of the above-mentioned four probes to move vertically downward to contact two of the above-mentioned four test points, and the drive controller confirms whether a first compensation measurement value can be obtained to generate a first compensation result. The first compensation step includes the drive controller generating a first compensation distance, and repeatedly executing the first probe lowering step according to the first compensation distance. The second needle lowering step includes driving the controller to control the other two of the aforementioned four probes to move vertically downward to contact the other two of the aforementioned four test points to generate a test loop, and driving the controller to confirm whether a second compensation measurement value can be obtained to generate a second compensation result. The second compensation step includes driving the controller to generate a second compensation distance, and repeating the second needle lowering step according to the second compensation distance.

Other embodiments of the above-mentioned implementation method are as follows: When the first compensation result is no, the drive controller executes the first compensation step. When the first compensation result is yes, the drive controller executes the second needle step. When the second compensation result is no, the drive controller executes the second compensation step. When the second compensation result is yes, the drive controller executes the measurement step.

Other embodiments of the aforementioned implementation method are as follows: The wafer measurement method further includes a height confirmation step. The height confirmation step includes driving the controller to obtain a height of a test point corresponding to at least one test point. The height of the test point is obtained by the controller controlling the image capture device to automatically focus on at least one test point, or by the controller controlling a height measuring device to measure at least one test point.

According to an implementation method of the structural aspect of the present invention, a wafer measurement system is provided, which includes a carrier, an image capture device, at least one probe and a controller. The carrier is used to carry a wafer and drive the wafer to move. The image capture device is used to capture an image frame. At least one probe is used to contact at least one point to be measured on the wafer to measure the wafer. The controller is coupled to the carrier, the image capture device and the at least one probe, and the controller is configured to implement an operation including a first positioning step, a second positioning step, a lower probe position moving step, a lower probe step and a measurement step. The first positioning step includes controlling the carrier to move so that an initial positioning point of the wafer enters the image frame of the image capture device to store an initial positioning point position corresponding to the carrier. The second positioning step includes aligning the image frame with at least one point to be tested adjacent to the initial positioning point to store a relative position corresponding to the carrier device and at least one test position corresponding to at least one point to be tested. The needle position movement step includes controlling the carrier device to move to a relative position and controlling at least one probe to move horizontally to correspond to at least one test position. The needle step includes controlling at least one probe to move vertically downward to contact at least one point to be tested to generate a test loop. The measurement step includes measuring at least one point to be tested through the test loop to generate a measurement value.

Other embodiments of the aforementioned embodiment are as follows: the initial positioning point is located on one side of a cutting line of the wafer.

Other embodiments of the aforementioned implementation method are as follows: When the number of at least one point to be tested is one, the controller is configured to implement a contact confirmation step. The contact confirmation step includes controlling at least one probe to vertically rise away from the point to be tested, then vertically descend close to the point to be tested, and controlling the image capture device to capture the image frame to generate a contact image, and comparing the contact image with an initial image to confirm whether the wafer is displaced to generate a confirmation result, and confirming whether the probe contacts the point to be tested based on the confirmation result. Wherein, when the confirmation result is yes, continue to execute the measurement step. When the confirmation result is no, execute a warning step and issue a warning notification.

Other embodiments of the aforementioned embodiment are as follows: When the diameter of the grain of the wafer is less than 50 microns, the exposed length of a needle tip of each probe is between 8 mm and 10 mm.

Other embodiments of the aforementioned implementation method are as follows: The controller is configured to implement a height confirmation step. The height confirmation step includes obtaining a height of a point to be measured corresponding to at least one point to be measured. The height of the point to be measured is obtained by controlling an image capture device to automatically focus on at least one point to be measured, or by controlling a height measuring device to measure at least one point to be measured.

100,500: Wafer measurement system

110: Controller

120: Carrier device

130: Image capture device

140:Probe

150:Height meter

200,300,400,600: Wafer measurement method

S01: Wafer angle correction step

S02: First positioning step

S03: Second positioning step

S04: needle position moving step

S05: Needle insertion step

S051: First stitch step

S052: The first compensation step

S053: Second stitch step

S054: Second compensation step

S06: Measurement step

S07: Judgment step

S08: Lifting step

S09: Output step

S10: Contact confirmation step

S11: Warning step

SHC: High Confirmation Step

A1,A2: positioning point

D: Initial positioning point

L: Cutting path

P: Point to be tested

FIG. 1 is a block diagram of a wafer measurement system of the first embodiment of the present invention; FIG. 2 is a flow diagram of a wafer measurement method of the second embodiment of the present invention; FIG. 3 is a diagram of positioning points and cutting paths in the image screen of the second embodiment of FIG. 2; FIG. 4 is a diagram of points to be measured in the image screen of the second embodiment of FIG. 2; FIG. 5 is a diagram of impedance measurement in the image screen of the second embodiment of FIG. 2; FIG. 6 is a flow diagram of a wafer measurement method of the third embodiment of the present invention; FIG. 7 is a flow diagram of a wafer measurement method of the fourth embodiment of the present invention; FIG. 8 is a block diagram of a wafer measurement system of the fifth embodiment of the present invention; and FIG. 9 is a flow diagram of a wafer measurement method of the sixth embodiment of the present invention.

The following will describe multiple embodiments of the present invention with reference to the drawings. For the sake of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is to say, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some commonly used structures and components will be shown in the drawings in a simple schematic manner; and repeated components may be represented by the same number.

In addition, in this article, when a certain component (or unit or module, etc.) is "connected" to another component, it can mean that the component is directly connected to the other component, or it can mean that the component is indirectly connected to the other component, that is, there are other components between the component and the other component. When it is clearly stated that a certain component is "directly connected" to another component, it means that there are no other components between the component and the other component. The terms first, second, third, etc. are only used to describe different components, and there is no restriction on the components themselves. Therefore, the first component can also be renamed as the second component. Moreover, the combination of components/units/circuits in this article is not a generally known, conventional or familiar combination in this field. Whether the components/units/circuits themselves are known cannot be used to determine whether their combination relationship is easy to be completed by ordinary knowledgeable people in the technical field.

Please refer to FIG. 1 and FIG. 2, wherein FIG. 1 is a block diagram of a wafer measurement system 100 of the first embodiment of the present invention; and FIG. 2 is a flow diagram of a wafer measurement method 200 of the second embodiment of the present invention. The wafer measurement system 100 is configured to implement the wafer measurement method 200 to measure the resistance and leakage current of a wafer. It must be explained that the wafer measurement method 200 of the present disclosure is not limited to being implemented by the wafer measurement system 100 of the present disclosure, and the components in the wafer measurement system 100 can be arbitrarily integrated into various combinations to perform the functions of the wafer measurement method 200.

The wafer measurement system 100 includes a controller 110, a carrier 120, an image capture device 130 and at least one probe 140. The controller 110 is coupled to and controls the carrier 120, the image capture device 130 and the at least one probe 140. The controller 110 is configured to implement the wafer measurement method 200. The carrier 120 is used to carry the wafer and drive the wafer to move. The image capture device 130 is used to capture an image frame. The probe 140 is used to contact at least one point to be measured (marked in FIG. 4) of the wafer to measure the wafer. In the first embodiment, the controller 110, the carrier device 120, the image capture device 130 and the probe 140 are installed in a wafer inspection machine (not shown); the controller 110 can be a processor, a microprocessor, a central processing unit (CPU), a computer, a wafer inspection machine processor, a mobile device processor, a cloud processor or other electronic computing processors; the image capture device 130 can be a charge coupled device (CCD) camera, but the present disclosure is not limited thereto.

Please refer to FIG. 2, the wafer measurement method 200 includes a wafer angle correction step S01, a first positioning step S02, a second positioning step S03, a lower needle position moving step S04, a lower needle step S05, a measurement step S06, a judgment step S07, a lifting step S08 and an output step S09.

Please refer to FIG. 1 to FIG. 3, wherein FIG. 3 is a schematic diagram showing the positioning points A1, A2 and the cutting lane L in the image frame of the second embodiment of FIG. 2. The wafer angle correction step S01 includes driving the controller 110 to control the carrier 120 to move so that a cutting lane L of the wafer carried by the carrier 120 enters the image frame captured by the image capture device 130, and establishing two positioning points A1, A2 according to the cutting lane L, and completing the angle positioning of the wafer with the positioning points A1, A2. In detail, the controller 110 establishes the image frame containing the cross-shaped cutting line L as the region of interest (ROI) image, and simultaneously establishes positioning points A1 and A2 in the ROI image, and stores the XY axis values of the positioning points A1 and A2. The controller 110 can then automatically perform compensation correction based on the X axis values of the positioning points A1 and A2 to further complete the correction of the wafer angle.

Please refer to FIGS. 1 to 4, wherein FIG. 4 is a schematic diagram of a point P to be tested in the image frame of the second embodiment of FIG. 2. The first positioning step S02 includes the drive controller 110 controlling the carrier 120 to move so that an initial positioning point D among the plurality of dies of the wafer enters the image frame of the image capture device 130 to store an initial positioning point position corresponding to the carrier 120. The initial positioning point D is located on one side of a scribe line L of the wafer. The second positioning step S03 includes the drive controller 110 aligning the image frame with the point P to be tested adjacent to the initial positioning point D (as shown in FIG. 4) to store a relative position corresponding to the carrier 120 and a test position corresponding to the point P to be tested. The test point P is the point preset by the user for measurement. The test point P can be located on the die or on a flat surface between the die.

Thus, by first recording the initial positioning point position through the first positioning step S02 and then recording the relative position through the second positioning step S03, the test point P can be positioned twice, thereby increasing the positioning accuracy of the carrier 120, making the subsequent needle position more accurate, and thus ensuring the accuracy of subsequent measurements. In addition, the controller 110 can record multiple test points P and the test positions corresponding to each test point P through the above method, and automatically read the test position of each test point P in the subsequent measurement to automatically perform wafer testing.

The needle position moving step S04 includes the drive controller 110 controlling the carrier 120 to move to a relative position, and the drive controller 110 controlling the probe 140 to move horizontally, corresponding to the test position. The needle moving step S05 includes the drive controller 110 controlling the probe 140 to move vertically downward to contact the test point P to generate a test loop.

Please refer to FIG. 4 and FIG. 5, wherein FIG. 5 is a schematic diagram of impedance measurement in the image frame of the second embodiment of FIG. 2. The measurement step S06 includes the drive controller 110 measuring the test point P through the test loop to generate a measurement value. As shown in FIG. 4, when measuring the leakage current of the wafer, the number of the test point P is one, and the number of the probes 140 is two. As shown in FIG. 5, when measuring the impedance of the wafer, a two-wire method is used to determine the contact impedance, the number of the test points P is three, the test points P are all located on the die, and the number of the probes 140 is four.

The judgment step S07 includes the drive controller 110 judging whether the measurement value is within a specification range to generate a judgment result. The lifting step S08 includes the drive controller 110 controlling the carrier 120 to move vertically upward by a lifting distance, and the lifting distance is between 1 micron and 20 microns. The output step S09 includes the drive controller 110 outputting the measurement value.

In detail, when the judgment result is yes, it means that the measured value meets the specification, and the controller 110 executes the output step S09 to output the measured value; when the judgment result is no, it means that the measured value does not meet the specification, and in order to ensure that this result is not caused by poor contact between the probe 140 and the test point P, the controller 110 executes the lifting step S08 to move the carrier 120 vertically upward to make the wafer closer to the probe 140, and then executes the measurement step S06 again. It should be particularly noted that if the number of repetitions of the lifting step S08 exceeds the preset critical number of times, it will be determined as a measurement failure and the wafer measurement will be terminated.

Please refer to FIG. 1 and FIG. 6. FIG. 6 is a schematic diagram showing the process of the wafer measurement method 300 of the third embodiment of the present invention. In the third embodiment, the wafer measurement method 300 also includes the wafer angle correction step S01, the first positioning step S02, the second positioning step S03, the lower needle position movement step S04, the lower needle step S05, the measurement step S06, the judgment step S07, the lifting step S08 and the output step S09 of the second embodiment of FIG. 2. The difference between the third embodiment and the second embodiment is that the wafer measurement method 300 further includes a contact confirmation step S10 and a warning step S11.

In the third embodiment, the wafer measurement method 300 is mainly used to measure the leakage current of the wafer, but the present disclosure is not limited thereto. It should be particularly noted that since the leakage current value of the wafer that meets the specifications is very close to the leakage current value measured when the probe 140 does not contact the test point P, in order to further ensure that the measured leakage current value is correct, it is necessary to confirm it through the contact confirmation step S10.

When measuring the leakage current of the wafer, there is one point P to be tested and two probes 140. The contact confirmation step S10 includes driving the controller 110 to control one of the probes 140 to vertically rise away from the point P to be tested and then vertically descend again to approach the point P to be tested, and driving the controller 110 to control the image capture device 130 to capture an image frame to generate a contact image, and driving the controller 110 to compare the contact image with an initial image to confirm whether the wafer is displaced to generate a confirmation result, and confirm whether the probe 140 contacts the point P to be tested based on the confirmation result. The initial image is an image generated by driving the controller 110 to control the image capture device 130 to capture an image frame before the controller 110 controls the probe 140 to move vertically downward. The warning step S11 includes driving the controller 110 to issue a warning notification.

In detail, when the confirmation result is yes, it means that the probe 140 has indeed contacted the test point P, and the controller 110 can continue to execute the measurement step S06; when the confirmation result is no, it means that the probe 140 has not contacted the test point P, and the controller 110 executes the warning step S11 to issue a warning notification. In this way, through the contact confirmation step S10, the measurement accuracy of the wafer leakage current can be increased.

Please refer to FIG. 1 and FIG. 7 , wherein FIG. 7 is a schematic flow chart showing a wafer measurement method 400 according to a fourth embodiment of the present invention. In the fourth embodiment, the wafer measurement method 400 also includes the wafer angle correction step S01, the first positioning step S02, the second positioning step S03, the needle position movement step S04, the needle step S05, the measurement step S06, the judgment step S07, the lifting step S08 and the output step S09 of the second embodiment of FIG. 2, and the difference between the fourth embodiment and the second embodiment is that the needle step S05 of the wafer measurement method 400 further includes a first needle step S051, a first compensation step S052, a second needle step S053 and a second compensation step S054.

In the fourth embodiment, the wafer measurement method 400 is mainly used for impedance measurement of wafers with a grain diameter less than 50 microns, and the measurement is performed in a two-wire manner. It should be particularly noted that when measuring wafers with a grain diameter less than 50 microns, the exposed length of the probe tip 140 must be within a certain range to avoid the contact area between the probe tip and the air being too large and affecting the electrical measurement. In the fourth embodiment, the grain diameter is 18 microns; the exposed length of the probe tip 140 is between 8 mm and 10 mm, but the content of this disclosure is not limited to this.

When measuring the impedance of the wafer, there are four points P to be tested, all of which are located on the die, and there are four probes 140. The first probe lowering step S051 includes driving the controller 110 to control two of the probes 140 to move vertically downward to contact two of the points P to be tested, and driving the controller 110 to confirm whether a first compensation measurement value can be obtained to generate a first compensation result. The first compensation step S052 includes driving the controller 110 to generate a first compensation distance, and repeatedly executing the first probe lowering step S051 according to the first compensation distance. The first compensation distance is the Z-axis value of the movement of two of the probes 140. The second needle lowering step S053 includes driving the controller 110 to control the other two probes 140 to move vertically downward to contact the other two of the test point P, thereby generating a test loop, and driving the controller 110 to confirm whether a second compensation measurement value can be obtained to generate a second compensation result. The second compensation step S054 includes driving the controller 110 to generate a second compensation distance, and repeatedly executing the second needle lowering step S053 according to the second compensation distance. The second compensation distance is the Z-axis value of the movement of the other two probes 140.

Specifically, when the first compensation result is no, the drive controller 110 repeatedly executes the first compensation step S052; when the first compensation result is yes, the drive controller 110 continuously executes the second needle step S053; when the second compensation result is no, the drive controller 110 repeatedly executes the second compensation step S054; when the second compensation result is yes, the drive controller 110 executes the subsequent measurement step S06. Thus, by performing the first needle step S051 and the second needle step S053 twice, the accuracy of the measurement of extremely small grains can be ensured.

Please refer to FIG. 8 and FIG. 9, wherein FIG. 8 is a block diagram of the wafer measurement system 500 of the fifth embodiment of the present invention; and FIG. 9 is a flow diagram of the wafer measurement method 600 of the sixth embodiment of the present invention. The wafer measurement system 500 is configured to implement the wafer measurement method 600. It must be noted that the wafer measurement method 600 of the present disclosure is not limited to being implemented by the wafer measurement system 500 of the present disclosure. The components in the wafer measurement system 500 can be arbitrarily integrated into various combinations to perform the functions of the wafer measurement method 600.

The wafer measurement system 500 also includes the controller 110, the carrier 120, the image capture device 130 and the probe 140 of the first embodiment of FIG. 1. The difference between the fifth embodiment and the first embodiment is that the wafer measurement system 500 further includes a height measuring device 150. The controller 110 is coupled to and controls the height measuring device 150. The height measuring device 150 is used to measure the height of a test point corresponding to the test point P. In the fifth embodiment, the height measuring device 150 can be a high-precision height measuring device, but the present disclosure is not limited thereto.

The wafer measurement method 600 also includes the wafer angle correction step S01, the first positioning step S02, the second positioning step S03, the lower needle position movement step S04, the lower needle step S05, the measurement step S06, the judgment step S07, the lifting step S08 and the output step S09 of the second embodiment of FIG. 2. The difference between the fifth embodiment and the second embodiment is that the wafer measurement method 600 further includes a height confirmation step SHC. The height confirmation step SHC is executed between the first positioning step S02 and the second positioning step S03. The height confirmation step SHC includes the drive controller 110 controlling the carrier 120 to move to the test point P, and obtaining a test point height corresponding to the test point P. The height of the point to be measured is obtained by the controller 110 controlling the image capture device 130 to perform auto focus on the point to be measured P, or the controller 110 controls the height measuring device 150 to measure the point to be measured P. The content of this disclosure is not limited to this.

In this way, the height difference of each test point P can be confirmed through the height of the test point, and the vertical downward movement distance of the probe 140 in the subsequent needle lowering step S05 can be fine-tuned according to the height of the test point.

From the above implementation method, it can be seen that the present invention has the following advantages: First, it can perform secondary positioning of the test point to increase the positioning accuracy, so that the subsequent needle placement position is more accurate, thereby ensuring the accuracy of subsequent measurement, and in the subsequent measurement, the test position of each test point can be automatically read to automatically perform wafer testing, thereby saving time and manpower. Second, through the contact confirmation step, the measurement accuracy of the wafer leakage current can be increased. Third, through the secondary needle placement method, the accuracy of the measurement of extremely small grains can be ensured.

Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.

200: Wafer measurement method

S01: Wafer angle correction step

S02: First positioning step

S03: Second positioning step

S04: needle position moving step

S05: Needle insertion step

S06: Measurement step

S07: Judgment step

S08: Lifting step

S09: Output step

Claims (10)

A wafer measurement method, comprising: A first positioning step, comprising driving a controller to control a carrier carrying a wafer to move so that an initial positioning point of the wafer enters an image frame of an image capture device to store an initial positioning point position corresponding to the carrier; A second positioning step, comprising driving the controller to align the image frame with at least one point to be tested adjacent to the initial positioning point to store a relative position corresponding to the carrier and at least one test position corresponding to the at least one point to be tested; A probe position moving step, comprising driving the controller to control the carrier to move to the relative position, and driving the controller to control at least one probe to move horizontally, corresponding to the at least one test position; A probe step, including driving the controller to control the at least one probe to move vertically downward to contact the at least one point to be tested to generate a test loop; and a measurement step, including driving the controller to measure the at least one point to be tested through the test loop to generate a measurement value; When the number of the at least one point to be tested is one, the wafer measurement method further includes a contact confirmation step, which includes driving the controller to control one of the at least one probe to vertically rise away from the point to be tested and then vertically descend close to the point to be tested, and driving the controller to control the image capture device to capture the image frame to generate a contact image, and driving the controller to compare the contact image with an initial image to confirm whether the wafer is displaced to generate a confirmation result, and confirming whether the probe contacts the point to be tested based on the confirmation result. When the confirmation result is yes, the controller is driven to continue to execute the measurement step, and when the confirmation result is no, the controller is driven to execute a warning step to issue a warning notification. A wafer measurement method as described in claim 1, wherein the initial positioning point is located on one side of a scribe line of the wafer. The wafer measurement method as described in claim 1 further includes: A wafer angle correction step, including driving the controller to control the movement of the carrier so that a cutting path of the wafer carried by the carrier enters the image screen, and establishing two positioning points based on the cutting path, and completing the angle positioning of the wafer with the two positioning points. The wafer measurement method as described in claim 1 further includes: A judgment step, including driving the controller to judge whether the measurement value is within a specification range to generate a judgment result; Wherein, when the judgment result is yes, driving the controller to execute an output step to output the measurement value. A wafer measurement method as described in claim 4, wherein, when the judgment result is no, the controller is driven to execute a lifting step to control the supporting device to move vertically upward a lifting distance, and execute the measurement step. A wafer measurement method as described in claim 5, wherein the lifting distance is between 1 micron and 20 microns. A wafer measurement method as described in claim 1, wherein the initial image is an image generated by driving the controller to control the image capture device to capture the image frame before the controller controls one of the at least one probe to move vertically downward. The wafer measurement method as described in claim 1, wherein when the diameter of the grain of the wafer is less than 50 microns and the number of the at least one test point is four, the number of the at least one probe is four, and the probe lowering step further includes: A first probe lowering step, including driving the controller to control two of the four probes to move vertically downward to contact two of the four test points, and driving the controller to confirm whether a first compensation measurement value can be obtained to generate a first compensation result; A first compensation step, including driving the controller to generate a first compensation distance, and repeatedly executing the first probe lowering step according to the first compensation distance; A second needle lowering step includes driving the controller to control the other two of the four probes to move vertically downward to contact the other two of the four test points to generate the test loop, and driving the controller to confirm whether a second compensation measurement value can be obtained to generate a second compensation result; and a second compensation step includes driving the controller to generate a second compensation distance, and repeatedly executing the second needle lowering step according to the second compensation distance. The wafer measurement method as described in claim 8, wherein, when the first compensation result is no, the controller is driven to execute the first compensation step; when the first compensation result is yes, the controller is driven to execute the second needle step; when the second compensation result is no, the controller is driven to execute the second compensation step; and when the second compensation result is yes, the controller is driven to execute the measurement step. The wafer measurement method as described in claim 1 further comprises: A height confirmation step, comprising driving the controller to obtain a height of a point to be measured corresponding to the at least one point to be measured; Wherein, the height of the point to be measured is obtained by the controller controlling the image capture device to automatically focus on the at least one point to be measured, or by the controller controlling a height measuring device to measure the at least one point to be measured.