TWI881176B - Light emitting device and manufacturing method thereof - Google Patents

Abstract

The invention discloses a light-emitting device and a manufacturing method thereof. The light-emitting device comprising: a light-emitting unit, the light-emitting unit comprises a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element; a light-transmitting layer covering the reflective layer and the light-emitting diode; a metal connecting layer electrically connecting the non-light-emitting element and the light-emitting diode.

Description

Light emitting device and manufacturing method thereof

The present invention relates to a light-emitting device and a manufacturing method thereof, and in particular to a light-emitting device including a voltage regulator diode and a light-emitting diode, and a manufacturing method of the light-emitting device.

In order to prevent EOS (Electrical Over Stress) and ESD (Electro-Static discharge) from damaging the light-emitting diode (LED), some electronic components with Zener characteristics are usually added to the circuit. This electronic component with Zener characteristics does not affect the operation of the circuit at ordinary times. When there is a transient surge, it can guide this abnormal discharge current to the ground terminal to protect the circuit and the light-emitting diode. Commonly used electronic components include Zener diodes, transient voltage suppressor diodes (TVS diodes), or surface mount resistors (Varistors).

As shown in Figure 1, a common packaging method is to add a Zener diode connected in parallel with the LED to protect the LED in the LED package. For example, the p-pole (anode or positive electrode) Za of the Zener diode is electrically connected to the n-pole (cathode or negative electrode) Bc of the LED, and the n-pole (cathode or negative electrode) Zc of the Zener diode is electrically connected to the p-pole (anode or positive electrode) Ba of the LED. The manufacturing method includes placing a light-emitting diode and a Zener diode on a carrier substrate and electrically connecting them by wire bonding. However, this manufacturing method is complicated and the volume of the package structure cannot be reduced.

With respect to the above-mentioned problems in the related technologies, no effective solutions have been proposed yet.

In order to solve the problems existing in the prior art, according to an embodiment of the present invention, a light-emitting device is provided, comprising: a light-emitting unit, the light-emitting unit comprising a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element; a light-transmitting layer covering the reflective layer and the light-emitting diode; and a metal connecting layer electrically connecting the non-light-emitting element and the light-emitting diode.

The following disclosure provides many different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements are described below to simplify the present invention. Of course, these are merely examples and are not intended to limit the present invention. For example, in the following description, forming a first component above or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which additional components may be formed between the first component and the second component so that the first component and the second component may not be in direct contact.

Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Figures 2A to 2J are schematic flow diagrams of a method for manufacturing a light-emitting device according to an embodiment of the present invention. As shown in Figures 2A and 2B, a first temporary carrier 102 is provided; a plurality of light-emitting units are arranged on the first temporary carrier 102, and each light-emitting unit includes a voltage-stabilizing diode 104 (non-light-emitting element) and a light-emitting diode 106 (light-emitting element). The voltage-stabilizing diode 104 has an electrode 1041 and the light-emitting diode 106 has an electrode 1061. In fact, the voltage-stabilizing diode 104 and the light-emitting diode 106 each have two electrodes (refer to Figure 3A). Due to the view relationship, Figures 2A to 2J only show one electrode.

As shown in FIG. 2A , a plurality of voltage regulator diodes 104 may be disposed on the first temporary substrate 102 with the electrode 1041 facing the first temporary substrate 102. In some embodiments, the voltage regulator diode 104 may be a Zener diode or a TVS diode. In this embodiment, the voltage regulator diode 104 is a Zener diode.

As shown in FIG. 2B , a plurality of light-emitting diodes 106 are disposed on the first temporary carrier 102 and are adjacent to a plurality of voltage-stabilizing diodes 104. Electrodes 1061 of the plurality of light-emitting diodes 106 face the first temporary carrier 102. In this embodiment, the number of light-emitting diodes 106 and voltage-stabilizing diodes 104 is four for illustration. Furthermore, a light-emitting diode 106 and a voltage-stabilizing diode 104 are regarded as a light-emitting unit. However, in other embodiments, a light-emitting unit may include more than two light-emitting diodes 106 and a voltage-stabilizing diode 104. Alternatively, a light-emitting unit may include a light-emitting diode 106 and more than two voltage-stabilizing diodes 104. Alternatively, a light-emitting unit may include more than two light-emitting diodes 106 and more than two voltage-stabilizing diodes 104.

As shown in FIG. 2C and FIG. 2D , a first insulating layer 110 is formed on the first temporary carrier 102, and the first insulating layer 110 covers a plurality of voltage-stabilizing diodes 104 and a plurality of light-emitting diodes 106. In this embodiment, the first insulating layer 110 is a light-transmitting layer. Fluorescent powder particles can be selectively mixed into the light-transmitting layer. The first insulating layer 110 can include silicone or epoxy, wherein the first insulating layer 110 can be formed by dispensing, spraying, or molding. In this embodiment, dispensing 108 is used as an example.

As shown in FIG. 2D , a physical removal step is performed on the transparent layer, such as grinding or polishing, to form a surface 112 for bonding with a second temporary carrier 114 in a subsequent manufacturing process.

As shown in FIG. 2E , the second temporary carrier 114 is bonded so that the plurality of light emitting diodes 106 and the plurality of voltage regulator diodes 104 are located between the first temporary carrier 102 and the second temporary carrier 114 which are arranged opposite to each other, that is, the second temporary carrier 114 is bonded to the surface 112 of the light-transmitting layer.

As shown in FIG. 2F , after the structure shown in FIG. 2E is flipped and the first temporary carrier 102 is removed, a trench 116 is formed between any two adjacent light-emitting units. In other words, the trench 116 is formed between the voltage regulator diode 104 of one light-emitting unit and the light-emitting diode 106 of another adjacent light-emitting unit.

As shown in FIG. 2G , a white glue layer 118 is filled in the groove 116. The white glue layer 118 is formed by mixing reflective particles into the matrix, and can reflect the light emitted by the light-emitting diode 106, so it can also be regarded as a reflective layer. The color of the white glue layer 118 may depend on the reflective particles mixed in, and the common color is white, so it is called a white glue layer. The matrix can be an insulating material and include a silicone-based matrix or an epoxy-based matrix; the reflective particles may include titanium dioxide, silicon dioxide, barium sulfate, or aluminum oxide. Among them, the white glue layer 118 can be formed by dispensing, spraying, printing, or molding. In this embodiment, dispensing 120 is used as an example.

As shown in FIG. 2H and FIG. 2I , a metal connection layer is formed on a side of the plurality of light-emitting units that is away from the second temporary carrier 114 .

In one embodiment, as shown in FIG. 2H , a protective layer 122 is covered on each electrode 1041 of each voltage regulator diode 104 and each electrode 1061 of each light-emitting diode 106; and a second insulating layer 124 is filled between each protective layer. The second insulating layer 124 can be the aforementioned white glue layer. The protective layer 122 can be a photoresist (e.g., photoresist).

In another embodiment, the second insulating layer 124 can be directly formed on the white glue layer 118 and the first insulating layer 110 by printing technology, so there is no need to form the protective layer 122 on the electrodes 1041 and 1061 to simplify the process. Under a specific selected process method, the second insulating layer 124 can also be formed on the electrodes 1041 and 1061, for example, the second insulating layer 124 covers the periphery of the electrodes 1041 and 1061, but does not cover the middle part thereof.

As shown in FIG. 2I , the protective layer 122 is removed and the electrodes 1041 and 1061 are exposed. A metal connection layer 128 is formed on the electrodes 1041 and 1061 and the second insulating layer 124 , wherein the metal connection layer 128 is connected to the electrodes 1041 of each voltage regulator diode 104 and the electrodes 1061 of each light-emitting diode 106 (the detailed structure can be referred to FIG. 3A and FIG. 3B ). The metal connection layer 128 can be formed by a printing technique (printing) or electroplating. The material of the metal connection layer 128 includes titanium, copper, nickel, silver, tin, gold, platinum or a combination thereof.

As shown in FIG. 2J , the metal connection layer 128, the second insulating layer 124 and the white glue layer 118 are cut, and finally the second temporary carrier 114 is removed to form a plurality of light-emitting devices 130. The cutting to form the plurality of light-emitting devices 130 is performed according to the position of the white glue layer 118, that is, the cutting is performed along the straight line L. The light-emitting device 130 includes a light-emitting unit, a first insulating layer 110, a white glue layer 118, a second insulating layer 124 and a metal connection layer 128. The voltage regulator diode 104 and the light-emitting diode 106 in each light-emitting unit are electrically connected to each other. The first insulating layer 110 covers the voltage regulator diode 104 and the light emitting diode 106 .

As shown in FIG. 3A and FIG. 3B, a bottom view and a cross-sectional view of a light emitting device 131 in an embodiment are shown by way of example. FIG. 3B is a cross-sectional view of the X-X line segment of FIG. 3A. In order to clearly show the relative relationship between each component, each component is drawn with a solid line. However, in an actual product, only the second insulating layer 124 and the metal connection layer 128 can be seen in the bottom view of the light emitting device 131.

As shown in FIG. 3A , the light-emitting diode 106 has two electrodes 1061 (a first electrode 1061A and a second electrode 1061B). For example, the first electrode 1061A is a p-pole (anode or positive electrode), and the second electrode 1061B is an n-pole (cathode or negative electrode). The voltage regulator diode 104 has two electrodes 1041 (a third electrode 1041A and a fourth electrode 1041B). The third electrode 1041A is a p-pole, and the fourth electrode 1041B is an n-pole. The metal connection layer includes a first connection portion 128A and a second connection portion 128B. The first connecting portion 128A directly covers and contacts the first electrode 1061A (p-pole) of the LED 106 and the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 , so that the first electrode 1061A (p-pole) of the LED 106 is connected to the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 . Similarly, the second connecting portion 128B directly covers and contacts the second electrode 1061B (n-pole) of the LED 106 and the third electrode 1041A (p-pole) of the voltage regulator diode 104, thereby connecting the second electrode 1061B (n-pole) of the LED 106 to the third electrode 1041A (p-pole) of the voltage regulator diode 104. Therefore, the LED 106 and the voltage regulator diode 104 are connected in reverse parallel (the equivalent circuit diagram can be referred to FIG. 1). In addition, in the bottom view of FIG. 3A , the first connecting portion 128A completely covers the first electrode 1061A (p-pole) of the LED 106 and does not completely cover the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 ; the second connecting portion 128B completely covers the second electrode 1061B (n-pole) of the LED 106 and does not completely cover the third electrode 1041A (p-pole) of the voltage regulator diode 104 . The third electrode 1041A (p-pole) and the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 that are not covered by the metal connection layer are covered by the second insulating layer 124. In other words, the third electrode 1041A (p-pole) (fourth electrode 1041B (n-pole)) of the voltage regulator diode 104 has a portion covered by the first connection portion 128A (second connection portion 128B), and another portion covered by the insulating layer. Furthermore, the white glue layer 118 only covers the opposite sides of the first insulating layer 110.

According to the manufacturing method of the embodiment of the present invention, the CSP (chip level package) manufacturing method is used to first arrange the voltage regulator diode with anti-static shock protection function on the first temporary substrate, and then place the LED chip next to it. After the dispensing, flattening, flip cutting, and screen printing process, the voltage regulator diode and the LED are finally electrically connected. The present invention provides a method for manufacturing a light-emitting device without a substrate and with a simple process, and the light-emitting device manufactured by the manufacturing method has a small volume and a CSP packaging structure with the same function.

Figures 4A to 4H are schematic flow diagrams of a method for manufacturing a light-emitting device according to an embodiment of the present invention. As shown in Figures 4A and 4B, a first temporary carrier 102 is provided; a plurality of light-emitting units are arranged on the first temporary carrier 102, and each light-emitting unit includes a voltage-stabilizing diode 104 and a light-emitting diode 106. The voltage-stabilizing diode 104 has an electrode 1041 and the light-emitting diode 106 has an electrode 1061. In fact, the voltage-stabilizing diode 104 and the light-emitting diode 106 each have two electrodes (see Figure 5A). Due to the view relationship, Figures 4A to 4H only show one electrode.

As shown in FIG. 4A , a plurality of voltage regulator diodes 104 may be disposed on the first temporary substrate 102 with the electrode 1041 facing the first temporary substrate 102. In some embodiments, the voltage regulator diode 104 may be a Zener diode or a TVS diode. In this embodiment, the voltage regulator diode 104 is a Zener diode. In this embodiment, the number of the LED 106 and the Zener diode 104 is four for illustration. Similarly, a LED 106 and a voltage regulator diode 104 are regarded as a light-emitting unit. However, in other embodiments, a light-emitting unit may include more than two light-emitting diodes 106 and a voltage regulator diode 104. Alternatively, a light-emitting unit may include one light-emitting diode 106 and more than two voltage regulator diodes 104. Alternatively, a light-emitting unit may include more than two light-emitting diodes 106 and more than two voltage regulator diodes 104.

As shown in FIG. 4B , a plurality of light-transmitting layers 210 are formed to cover the respective light-emitting diodes 106. Fluorescent powder particles may be selectively mixed into the light-transmitting layer. The light-transmitting layer may include silicone or epoxy. The light-transmitting layer 210 only covers the light-emitting diode 106 and does not cover the voltage-stabilizing diode 104. In one embodiment, the light-emitting diode 106 may be first disposed on the first temporary carrier 102, and then the light-transmitting layer 210 may be selectively coated on the light-emitting diode 106 without being formed on the voltage-stabilizing diode 104. Alternatively, the light-emitting diode 106 covered with the light-transmitting layer 210 is disposed on the first temporary carrier 102 .

As shown in FIG. 4C , a white glue layer 118 is formed on the first temporary carrier 102, and the white glue layer 118 covers the plurality of voltage regulator diodes 104 and the plurality of light-transmitting layers 210. The white glue layer 118 covers the LED 106 but does not directly contact the LED 106. The white glue layer 118 completely covers and directly contacts the voltage regulator diode 104. The material of the white glue layer 118 can refer to the above-mentioned relevant paragraphs.

As shown in FIG. 4D , a physical removal step is performed on the white glue layer 118, such as grinding or polishing, to expose the light-transmitting layer 210 covering the LED 106 and form a surface 212 to be bonded to the second temporary carrier 114 in the subsequent manufacturing process. As shown in FIG. 4E , the second temporary carrier 114 is bonded so that the plurality of LEDs 106 and the plurality of voltage regulator diodes 104 are located between the first temporary carrier 102 and the second temporary carrier 114 that are disposed opposite to each other, that is, the second temporary carrier 114 is bonded to the surface 212.

As shown in FIG. 4F and FIG. 4G, the structure shown in FIG. 4E is flipped over and the first temporary carrier 102 is removed. A metal connection layer 128 is formed on a side of the plurality of light-emitting units away from the second temporary carrier 114.

Specifically, as shown in FIG. 4F , after removing the first temporary carrier 102, a protective layer 122 is covered on each electrode 1041 of the voltage regulator diode 104 and each electrode 1061 of the light-emitting diode 106; and a second insulating layer 124 is filled between each protective layer 122 by printing. The material of the second insulating layer 124 can be white glue. The protective layer 122 can be a photoresist (e.g., photoresist).

As shown in FIG. 4G , the protective layer 122 is removed and the electrodes 1041 and 1061 are exposed. A metal connection layer 128 is formed on the electrodes 1041 and 1061 and the second insulating layer 124 , wherein the metal connection layer 128 is connected to the electrodes 1041 of each voltage regulator diode 104 and the electrodes 1061 of each light-emitting diode 106 (the detailed structure can be referred to FIG. 5A and FIG. 5B ). The metal connection layer 128 can be formed by a printing technique (printing) or electroplating. The material of the metal connection layer 128 includes titanium, copper, nickel, silver, tin, gold, platinum or a combination thereof.

As shown in FIG. 4H , the metal connection layer 128 , the second insulating layer 124 and the white glue layer 118 are cut along a direction perpendicular to the second temporary substrate 114 , that is, along the straight line L. Finally, the second temporary carrier 114 is removed to form a plurality of light emitting devices 230 .

The light-emitting device 230 includes a light-emitting unit, a light-transmitting layer 210, a white glue layer 118, a second insulating layer 124, and a metal connection layer 128. The voltage regulator diode 104 and the light-emitting diode 106 in each light-emitting unit are electrically connected to each other. The white glue layer 118 surrounds the light-transmitting layer 210 and does not cover the upper surface of the light-transmitting layer 210.

As shown in FIG. 5A and FIG. 5B, a bottom view and a cross-sectional view of a light emitting device 231 in an embodiment are shown by way of example. FIG. 5B is a cross-sectional view of the X-X line segment of FIG. 5A. In order to clearly show the relative relationship between each component, each component is drawn with a solid line. However, in an actual product, only the second insulating layer 124 and the metal connection layer 128 can be seen in the bottom view of the light emitting device 231.

As shown in FIG. 5A , the light-emitting diode 106 has two electrodes 1061 (a first electrode 1061A and a second electrode 1061B). The first electrode 1061A is a p-pole (anode or positive electrode), and the second electrode 1061B is an n-pole (cathode or negative electrode). The voltage regulator diode 104 has two electrodes 1041 (a third electrode 1041A and a fourth electrode 1041B). The third electrode 1041A is a p-pole, and the fourth electrode 1041B is an n-pole. The metal connection layer includes a first connection portion 128A and a second connection portion 128B. The first connecting portion 128A directly covers and contacts the first electrode 1061A (p-pole) of the LED 106 and the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 , so that the first electrode 1061A (p-pole) of the LED 106 is connected to the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 . Similarly, the second connecting portion 128B directly covers and contacts the second electrode 1061B (n-pole) of the LED 106 and the third electrode 1041A (p-pole) of the voltage regulator diode 104, thereby connecting the second electrode 1061B (n-pole) of the LED 106 to the third electrode 1041A (p-pole) of the voltage regulator diode 104. Therefore, the LED 106 and the voltage regulator diode 104 are connected in reverse parallel (the equivalent circuit diagram can be referred to FIG. 1).

In addition, in the top view of FIG. 5A , the first connecting portion 128A completely covers the first electrode 1061A (p-pole) of the LED 106 and does not completely cover the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 ; the second connecting portion 128B completely covers the second electrode 1061B (n-pole) of the LED 106 and does not completely cover the third electrode 1041A (p-pole) of the voltage regulator diode 104 . The third electrode 1041A (p-pole) and the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 that are not covered by the metal connection layer are covered by the second insulating layer 124. In other words, the third electrode 1041A (p-pole) (fourth electrode 1041B (n-pole)) of the voltage regulator diode 104 has a portion covered by the first connection portion 128A (second connection portion 128B), and another portion covered by the second insulating layer 124.

According to the manufacturing method of the embodiment of the present invention, a voltage regulator diode (such as a Zener diode) is placed in a high reflective material (such as a white glue layer) containing reflective particles to reduce the absorption of light emitted by the LED by the voltage regulator diode and thereby improve the luminous efficiency of the light-emitting device.

6A to 6H are schematic flow charts of a method for manufacturing the light emitting device 330 according to an embodiment of the present invention.

As shown in FIG. 6A , a first temporary carrier 102 is provided; a plurality of light-emitting units are arranged on the first temporary carrier 102, each light-emitting unit including a voltage regulator diode 104 and a light-emitting diode 106. In some embodiments, the voltage regulator diode 104 may be a Zener diode or a TVS diode. In this embodiment, two light-emitting diodes 106 and two voltage regulator diodes 104 are shown for illustration. Similarly, a light-emitting diode 106 and a voltage regulator diode 104 are regarded as a light-emitting unit. However, in other embodiments, a light-emitting unit may include more than two light-emitting diodes 106 and a voltage regulator diode 104. Alternatively, a light-emitting unit may include a light-emitting diode 106 and more than two voltage-stabilizing diodes 104. Alternatively, a light-emitting unit may include more than two light-emitting diodes 106 and more than two voltage-stabilizing diodes 104.

As shown in FIG. 6A , the voltage regulator diode 104 has two electrodes 1041, and the light-emitting diode 106 has two electrodes 1061, and the electrodes 1041 and 1061 face the first temporary carrier 102. The voltage regulator diode 104 is first coated with a white glue layer 301, and then placed on the first temporary carrier 102. The white glue layer 301 is formed by mixing reflective particles into a matrix. The matrix can be an insulating material and include a silicone-based matrix (silicone-based) or an epoxy-based matrix (epoxy-based); the reflective particles can include titanium dioxide, silicon dioxide, barium sulfate, or aluminum oxide.

As shown in FIG. 6B , a light-transmitting layer 310 is formed to cover the light-emitting diode 106 and the white glue layer 301. Fluorescent powder particles may be selectively mixed into the light-transmitting layer 310. The light-transmitting layer 310 may include silicone or epoxy. The light-transmitting layer 310 may be formed by spraying or molding.

As shown in FIG6C, after the second temporary carrier 314 is bonded to the light-transmitting layer 310, the structure shown in FIG6B is flipped over and the first temporary carrier 102 is removed. Next, the light-transmitting layer 310 is cut to form a groove 316, wherein the groove 316 has an inclined sidewall.

As shown in FIG. 6D , metal bumps 323 are formed on a side of the plurality of light-emitting units away from the second temporary substrate 314. Each metal bump 323 is located on the electrode 1061 of the light-emitting diode and the electrode 1041 of the voltage regulator diode. In one embodiment, the metal bump 323 is a lead-free solder, which contains at least one material selected from the group consisting of tin, copper, silver, bismuth, indium, zinc and antimony.

As shown in FIG. 6E , a third insulating layer 318 is formed to cover the light emitting unit and the metal bump 323. In this embodiment, the third insulating layer 318 is a white glue layer.

As shown in FIG. 6F , the third insulating layer 318 is ground to expose the metal bumps 323 .

As shown in FIG. 6G , a metal connection layer 128 connected to the metal bump 323 is formed. The metal connection layer 128 is connected to the electrode 1041 of the voltage regulator diode 104 and the electrode 1061 of the light-emitting diode 106. The metal connection layer 128 can be formed by a printing technique (printing) or electroplating. The material of the metal connection layer 128 includes titanium, copper, nickel, silver, tin, gold, platinum or a combination thereof.

As shown in FIG. 6H , a metal connection layer may be optionally formed by applying copper paste 329.

As shown in FIG. 6I , the metal connection layer 128 and the third insulating layer 318 are cut between each adjacent light-emitting unit, that is, the cutting is performed along the straight line L to form a plurality of light-emitting devices 330, which include light-emitting units, a white glue layer 301, a light-transmitting layer 310, a third insulating layer 318, metal bumps 323, and a metal connection layer 128. The voltage regulator diode 104 and the light-emitting diode 106 in each light-emitting unit are electrically connected to each other. In addition, the light-transmitting layer 310 completely covers the white glue layer 301. The third insulating layer 318 surrounds the light-transmitting layer 310 and the metal bumps 323.

As shown in FIG. 6J , the light emitting device 330 connects the light emitting unit to the device 340 through a solder 325. In one embodiment, the device 340 may be a substrate with an electrical connection circuit, such as a PCB board, or a metal circuit formed on an insulating carrier.

According to the manufacturing method of the embodiment of the present invention, the voltage regulator diode (such as a Zener diode) is first coated with a high reflective material, and then the subsequent packaging process is carried out with the light-emitting diode. Compared with the second insulating layer 218 formed by the printing process in FIG. 4F, in this embodiment, the metal bump 323 is first formed, the third insulating layer 318 is then polished to expose the metal bump 323, thereby reducing the yield loss caused by the alignment error in the printing process.

As shown in FIG. 7 , a bottom view of a light emitting device 331 in an embodiment is exemplarily shown.

As shown in FIG. 7 , the light-emitting diode 106 has two electrodes 1061 (a first electrode 1061A and a second electrode 1061B). The first electrode 1061A is a p-pole (anode or positive electrode), and the second electrode 1061B is an n-pole (cathode or negative electrode). The voltage regulator diode 104 has two electrodes 1041 (a third electrode 1041A and a fourth electrode 1041B). The third electrode 1041A is a p-pole 1041A and the fourth electrode 1041B is an n-pole 1041B. The metal connection layer includes a first connection portion 128A and a second connection portion 128B. The first connecting portion 128A directly covers and contacts the first electrode 1061A (p-pole) of the LED 106 and the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 , so that the first electrode 1061A (p-pole) of the LED 106 is connected to the fourth electrode 1041B (n-pole) of the voltage regulator diode 104 . Similarly, the second connecting portion 128B directly covers and contacts the second electrode 1061B (n-pole) of the LED 106 and the third electrode 1041A (p-pole) of the voltage regulator diode 104, thereby connecting the second electrode 1061B (n-pole) of the LED 106 to the third electrode 1041A (p-pole) of the voltage regulator diode 104. Therefore, the LED 106 and the voltage regulator diode 104 are connected in reverse parallel (the equivalent circuit diagram can be referred to FIG. 1).

In addition, in the bottom view of FIG. 7 , the first connecting portion 128A completely covers the first electrode 1061A (p-pole) of the light-emitting diode 106 and the fourth electrode 1041B (n-pole) of the voltage regulator diode 104; the second connecting portion 128B completely covers the second electrode 1061B (n-pole) of the light-emitting diode 106 and the third electrode 1041A (p-pole) of the voltage regulator diode 104. The first connecting portion 128A is on the outer layer and surrounds the second connecting portion 128B. In addition, the third insulating layer 318 surrounds the four sides of the light-transmitting layer 310.

As shown in FIG. 8 , after removing the second temporary carrier 314 from the structure of FIG. 6D , the light-emitting unit is connected to the device 340 through the metal bump 323. The device 340 can be a substrate with an electrical connection circuit, that is, the light-emitting unit can be directly bonded and fixed on the substrate through the metal bump 323, and only flux (not shown) needs to be applied between the substrate and the light-emitting unit without additional solder application.

As shown in FIG. 9 , after removing the second temporary carrier 314 from the structure of FIG. 6F , the light-emitting unit is connected to the device 340 via the metal bump 323. Similar to FIG. 8 , the light-emitting unit can be directly bonded and fixed on the substrate via the metal bump 323 and only flux (not shown) needs to be applied between the substrate and the light-emitting unit without additional solder application.

Table 1 and Table 2 are respectively the photoelectric data of the light emitting device 130 and the light emitting device 230 according to the embodiment of the present invention (five samples of each light emitting device are taken for testing). From Table 1 and Table 2, it can be seen that the average light intensity of the light emitting device 230 is about 6.5% higher than the average light intensity of the light emitting device 130. Table 1 NO. Luminous flux [lm] Radiant flux [W] Main wavelength [nm] Peak wavelength [nm] Half-wave width [nm] Voltage [V] Current [A] Power consumption [W] Luminous efficiency [lm/W] 1 6.8072 0.2584 450.3 444.8158 15.9 2.8631 0.1604 0.4592 14.8 2 7.1461 0.2565 451.3 446.6667 16.3 2.8491 0.1604 0.4569 15.6 3 7.108 0.2548 451.3 446.6667 15.5 2.8507 0.1604 0.4572 15.5 4 7.6123 0.258 452.3 447.0367 15.9 2.8516 0.1604 0.4573 16.6 5 7.1145 0.2586 451 446.2966 15.9 2.8574 0.1604 0.4583 15.5 AVG. 0.25726 Table 2 NO. Luminous flux [lm] Radiant flux [W] Main wavelength [nm] Peak wavelength [nm] Half-wave width [nm] Voltage [V] Current [A] Power consumption [W] Luminous efficiency [lm/W] 1 7.6161 0.2742 451.2 446.2966 15.9 2.8436 0.1604 0.456 16.7 2 7.7354 0.2741 451.4 446.6667 15.9 2.844 0.1604 0.4561 17 3 7.469 0.2741 450.8 445.5562 15.9 2.8457 0.1603 0.4563 16.4 4 7.5125 0.2742 451 445.5562 15.9 2.8444 0.1603 0.456 16.5 5 7.4547 0.2735 450.8 445.5562 15.9 2.8461 0.1603 0.4563 16.4 AVG. 0.27402

After the light emitting device without voltage regulator diode and the light emitting device 230 were subjected to the human body mode electrostatic discharge test, it was found that the voltage drop ratio of the light emitting device 230 was lower. Therefore, the light emitting device 230 has a higher anti-static shock capability.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

102: First temporary carrier 104: Voltage regulator diode 1041: Electrode 1041A: Third electrode 1041B: Fourth electrode 106: LED 1061: Electrode 1061A: First electrode 1061B: Second electrode 108: Glue application 110: First insulating layer 112: Surface 114: Second temporary carrier 116: Groove 118: White glue layer 120: Glue application 122: Protective layer 124: Second insulating layer 128: Metal connection Layer 128A: First connection part 128B: Second connection part 130, 131: Light-emitting device 210: Translucent layer 212: Surface 230, 231: Light-emitting device 301: White glue layer 310: Translucent layer 314: Second temporary carrier 316: Groove 318: Third insulating layer 323: Metal bump 325: Solder 329: Copper paste 330, 331: Light-emitting device 340: Device L: Straight line Bc, Zc: n-pole Ba, Za: p-pole

Figure 1 is a schematic diagram of a circuit connecting a light-emitting diode and a Zener diode;

FIG. 2A to FIG. 2J are schematic cross-sectional views of a manufacturing process of a light-emitting device manufacturing method according to an embodiment of the present invention;

FIG. 3A is a bottom view of a light emitting device according to an embodiment of the present invention;

FIG. 3B is a schematic cross-sectional view taken along line X-X in FIG. 3A ;

4A to 4H are schematic cross-sectional views of a manufacturing process of a light-emitting device manufacturing method according to an embodiment of the present invention;

FIG. 5A is a bottom view of a light emitting device according to an embodiment of the present invention;

FIG. 5B is a schematic cross-sectional view taken along line X-X in FIG. 5A ;

FIGS. 6A to 6I are schematic cross-sectional views of a manufacturing process of a light-emitting device manufacturing method according to an embodiment of the present invention;

Figure 6J is a schematic diagram of the connection between the light-emitting device and the device according to an embodiment of the present invention.

FIG. 7 is a bottom view of a light emitting device according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of the structure and device connections of FIG. 6D.

FIG. 9 is a schematic diagram of the structure and device connections of FIG. 6F.

104: Voltage regulator diode

106: LED

1041B: Fourth electrode

1061A: First electrode

110: First insulation layer

118: White glue layer

124: Second insulation layer

128: Metal connection layer

Claims (10)

A light-emitting device comprises: a light-emitting element having a light-emitting top surface; a non-light-emitting element having a non-light-emitting top surface; a metal connection layer completely located below the light-emitting element and the non-light-emitting element, and comprising a first connection portion and a second connection portion, the first connection portion having a first bottom and a first protruding portion, the second connection portion having a second bottom and a second protruding portion, the lowermost surfaces of the first bottom and the second bottom being coplanar with each other, the first protruding portion downwardly extending from the bottom of the metal connection layer; The first bottom is directly connected to the first bottom and extends upward to the light-emitting element, and the second protrusion is directly connected to the second bottom downward and extends upward to the light-emitting element; and a reflective layer surrounds the light-emitting element but exposes the light-emitting top surface, buries the non-light-emitting element and blocks the non-light-emitting top surface, and the reflective layer has an uppermost surface that is substantially parallel to and completely higher than the non-light-emitting top surface and the light-emitting top surface; wherein the metal connection layer does not extend outward beyond an outermost side wall of the reflective layer. According to the light-emitting device described in item 1 of the patent application scope, it also includes an insulating layer located between the light-emitting element and the metal connection layer, and between the non-light-emitting element and the metal connection layer. According to the light-emitting device described in item 1 of the patent application, the light-emitting element has a first electrode and a second electrode, the non-light-emitting element has a third electrode and a fourth electrode, and the first connecting portion connects the first electrode and the fourth electrode, and the second connecting portion connects the second electrode and the third electrode. According to the light-emitting device described in Item 1 of the patent application scope, it further includes a light-transmitting layer covering the light-emitting top surface. According to the light-emitting device described in item 4 of the patent application, the light-transmitting layer surrounds the light-emitting element and is in direct contact with the reflective layer. According to the light-emitting device described in item 1 of the patent application, the reflective layer has a portion, and the portion and the non-light-emitting element are located on the opposite side of the light-emitting element. According to the light-emitting device described in item 2 of the patent application, the reflective layer is in direct contact with the insulating layer. According to the light-emitting device described in item 2 of the patent application, the metal connection layer passes through the insulating layer to directly connect the light-emitting element and the non-light-emitting element. According to the light-emitting device described in item 1 of the patent application, the reflective layer is higher than the light-emitting element. According to the light-emitting device described in item 1 of the patent application, the reflective layer includes titanium dioxide, silicon dioxide, barium sulfate or aluminum oxide.