TWI880625B - Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and program - Google Patents

Abstract

The invention of this case is to have: A processing chamber for processing a substrate; A gas supply unit capable of supplying gas to the substrate; A substrate support unit for supporting the substrate; and A gas consumption structure, which comprises: A first portion configured to surround the side of the substrate when the substrate is supported on the substrate support unit; and A second portion disposed on the first portion and configured to surround the side of the substrate, and configured such that the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is shorter than the horizontal distance between the side of the substrate and the side of the first portion facing the side of the substrate.

Description

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and program

This case is about substrate processing equipment, substrate processing method, semiconductor device manufacturing method and program.

As one of the manufacturing processes of semiconductor devices, there is a process of performing film forming on a substrate supported by a substrate support portion (for example, refer to Patent Document 1). At this time, a film may be formed not only on the substrate but also around it. In this case, the film formed on the substrate and the film formed around it will be combined, and there is a possibility that the film will be peeled off when the substrate is moved.

Prior art literature Patent Literature

Patent document 1: Japanese Patent Publication No. 2002-180250

This case is to provide a technology that can reduce the impact of the formed film.

According to one aspect of the present case, a technology having the following structure can be provided: a processing chamber for processing a substrate; a gas supply unit capable of supplying gas to the substrate; a substrate support unit for supporting the substrate; and a gas consumption structure, which comprises: a first portion configured to surround the side of the substrate when the substrate is supported on the substrate support unit; and a second portion disposed on the first portion and configured to surround the side of the substrate, and configured so that the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is shorter than the horizontal distance between the side of the substrate and the side of the first portion facing the side of the substrate.

According to this proposal, the influence of the formed film can be reduced.

100: Wafer (substrate)

201: Processing room

240,250,260: Gas supply unit

210: Substrate support part

215: Gas consumption structure

[Figure 1] is a schematic cross-sectional view of a substrate processing device applicable to one form of the present case.

[Figure 2] (a) is a diagram illustrating a first gas supply unit of a substrate processing device applicable to one form of the present invention, Figure 2 (b) is a diagram illustrating a second gas supply unit of a substrate processing device applicable to one form of the present invention, and Figure 2 (c) is a diagram illustrating a third gas supply unit of a substrate processing device applicable to one form of the present invention.

[Figure 3] is a schematic diagram of the controller 400 of a substrate processing device applicable to one form of the present case, and the controller 400 is represented by a block diagram.

[Figure 4] is a schematic flow chart of one form of substrate processing process in this case.

[Figure 5] is a schematic cross-sectional view of the main parts of a substrate processing device applicable to one form of the present case.

[Figure 6] is a schematic plan view of the main parts of a substrate processing device applicable to one form of the present case.

[Figure 7] is a schematic cross-sectional view of the main parts of the substrate processing device used in another form of the present invention.

[Figure 8] is a schematic plan view of the main parts of the substrate processing device used in another form of the present case.

[Figure 9] is a schematic cross-sectional view of the main parts of the substrate processing device used in another form of the present invention.

<One form of this case>

Below, one form of the present invention will be described mainly with reference to Figures 1 to 6. In addition, the drawings used in the following description are all schematic , and the relationship between the dimensions of the elements and the ratio of the elements shown in the drawings are not necessarily consistent with the actual ones. Moreover, the relationship between the dimensions of the elements and the ratio of the elements in multiple drawings are not necessarily consistent.

(1) Structure of substrate processing device

FIG1 is used to explain the structure of the substrate processing device 200. As shown in FIG1, the substrate processing device 200 is provided with a container 202. The container 202 is a closed container that is, for example, circular and flat in cross section. In addition, the container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A processing chamber 201 is provided in the container 202 to form a processing space 205, and the processing space 205 is used to process the wafer 100 as a processing substrate. A transfer chamber 206 is formed below the processing chamber 201, and the transfer chamber 206 is a transfer space through which the wafer 100 passes when the wafer 100 is transferred to the processing space 205.

A substrate transfer port 148 adjacent to the gate valve 149 is provided on the side of the container 202, and the wafer 100 is moved between the substrate transfer port 148 and the unillustrated vacuum transfer chamber. A plurality of lifting pins 207 are provided at the bottom of the container 202. An exhaust pipe 272 described later is also provided.

A substrate support portion 210 for supporting the wafer 100 is disposed in the container 202.

The substrate support part 210 mainly includes: a substrate mounting surface 211 as a supporting surface for supporting (mounting) the wafer 100; a substrate mounting table 212 having the substrate mounting surface 211 on its surface; and a heater 213 as a heating part provided in the substrate mounting table 212.

Furthermore, a gas consumption structure 215 is provided on the same surface as the substrate mounting surface 211. In the substrate mounting table 212, through holes 214 through which the lifting pins 207 pass are provided at positions corresponding to the lifting pins 207. The specific structure of the gas consumption structure 215 will be described later.

Furthermore, a temperature measuring device 216 for measuring the temperature of the heater 213 is provided in the substrate mounting table 212. The temperature measuring device 216 is connected to the temperature measuring unit 221 via wiring 220.

The heater 213 is connected to the wiring 222 for supplying power. The wiring 222 is connected to the heater control unit 223.

The temperature measuring unit 221 and the heater control unit 223 are electrically connected to the controller 400 described later. The controller 400 transmits control information to the heater control unit 223 based on the temperature information measured by the temperature measuring unit 221. The heater control unit 223 controls the heater 213 with reference to the received control information.

The substrate mounting table 212 is supported by a transmission shaft 217. The transmission shaft 217 passes through the bottom of the container 202 and is further connected to the lifting part 218 outside the container 202.

The lifting part 218 mainly includes: a support shaft 218a supporting the transmission shaft 217; and an actuating part 218b for lifting or rotating the support shaft 218a. The actuating part 218b includes: a lifting mechanism 218c including, for example, a motor for lifting and lowering; and a rotating mechanism 218d including a gear for rotating the support shaft 218a.

The lifting part 218 may also be provided with an indication part 218e for indicating the lifting and rotating of the actuating part 218b as a part of the lifting part 218. The indication part 218e is electrically connected to the controller 400. The indication part 218e controls the actuating part 218b according to the indication of the controller 400.

The lifting part 218 is actuated to lift the transmission shaft 217 and the substrate mounting table 212, whereby the substrate mounting table 212 can lift the wafer 100 mounted on the substrate mounting surface 211. In addition, the periphery of the lower end of the transmission shaft 217 is covered by the bellows 219, whereby the processing space 205 is kept airtight.

When the wafer 100 is transported, the substrate mounting surface 211 of the substrate mounting table 212 is lowered to a transport position opposite to the substrate loading and unloading outlet 148. When the wafer 100 is processed, as shown in FIG. 1 , the wafer 100 is raised to a processing position in the processing space 205.

A gas introduction hole 231 is provided at the upper part (upstream side) of the processing space 205. For example, the gas introduction hole 231 is provided at the top of the container 202. The gas introduction hole 231 is configured to connect the first gas supply part 240, the second gas supply part 250 and the third gas supply part 260 described later. Only one gas introduction hole 231 is shown in FIG1, but a gas introduction hole may also be provided for each gas supply part.

(First gas supply unit)

Next, the first gas supply unit 240 is described using FIG. 2(a). The first gas supply unit 240 has a first gas supply pipe 241. The first gas supply pipe 241 corresponds to A in FIG. 1 and is a structure for supplying gas to the processing chamber 201.

In the first gas supply pipe 241, a first gas source 242, a mass flow controller (MFC) 243 of a flow controller (flow control unit), and an on-off valve 244 are provided in order from the upstream direction.

The first gas source 242 is a source of a first gas (also referred to as "first element-containing gas") containing a first element. The first element-containing gas is one of the raw material gases, i.e., the processing gas. Here, the first element is, for example, silicon (Si). That is, the first element-containing gas is, for example, a silicon-containing gas. Specifically, for example, silane (SiH ₄ ) gas can be used as the silicon-containing gas. When SiH ₄ gas is used, SiH ₄ gas is thermally decomposed to form a polycrystalline silicon film of a polycrystalline film on the surface of the wafer 100.

The first gas supply part 240 (also called the silicon-containing gas supply part) is mainly composed of the first gas supply pipe 241, MFC 243, and valve 244.

(Second gas supply unit)

Next, the second gas supply unit 250 is described using FIG. 2(b). The second gas supply unit 250 has a second gas supply pipe 251. The second gas supply pipe 251 corresponds to B in FIG. 1 and is a structure for supplying gas to the processing chamber 201.

In the second gas supply pipe 251, a second gas source 252, MFC 253 and valve 254 are provided in order from the upstream direction.

The second gas source 252 is a second gas source containing a second element (hereinafter also referred to as "gas containing the second element"). The gas containing the second element is one of the processing gases.

Here, the second element-containing gas is a gas containing a second element different from the first element. The second element is, for example, germanium (Ge). Here, the second element-containing gas is described as, for example, a nitrogen-containing gas.

The second gas supply unit 250 is mainly composed of the second gas supply pipe 251, MFC253, and valve 254.

In addition, when a film is formed on the wafer 100 using the first gas monomer, the second gas supply unit 250 may not be provided.

(Third gas supply unit)

Next, the third gas supply unit 260 is described using FIG. 2(c). The third gas supply unit 260 has a third gas supply pipe 261. The third gas supply pipe 261 corresponds to C in FIG. 1 and is a structure for supplying gas to the processing chamber 201.

In the third gas supply pipe 261, a third gas source 262, MFC 263 and valve 264 are provided in order from the upstream direction.

The third gas source 262 is an inert gas source. The inert gas is a gas used to exhaust the atmosphere in the container 202 or to act as a carrier gas for the first gas or the second gas, such as nitrogen (N ₂ ) gas.

The third gas supply unit 260 is mainly composed of the third gas supply pipe 261, MFC 263, and valve 264.

The first gas supply unit 240, the second gas supply unit 250, and the third gas supply unit 260 described above are collectively referred to as the gas supply unit.

(Exhaust section)

Next, FIG. 1 is used to explain the exhaust section 271 that exhausts gas from the outer peripheral direction of the wafer 100. The exhaust pipe 272 is connected to the container 202 in a manner connected to the processing space 205. The exhaust pipe 272 is provided with an APC (AutoPressure Controller) 273, which is a pressure controller that controls the pressure in the processing space 205 to a predetermined pressure.

APC273 is a valve body with an adjustable opening (not shown), which adjusts the conductivity of the exhaust pipe 272 according to the instruction from the controller 400. In addition, in the exhaust pipe 272, a valve 274 is provided on the upstream side of the APC273. The exhaust pipe 272, the valve 274, and the APC273 are collectively referred to as the exhaust section.

Furthermore, a DP (Dry Pump) 275 is provided downstream of the exhaust pipe 272. DP275 exhausts the atmosphere of the processing space 205 through the exhaust pipe 272.

(Controller)

Next, the controller 400 is described using FIG. 3. The substrate processing device 200 has a controller 400 that controls the operation of each part.

The controller 400 of the control unit (control means) is configured as a computer having a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a memory device 403, and an I/O port 404. The RAM 402, the memory device 403, and the I/O port 404 are configured to exchange data with the CPU 401 via an internal bus 405. The signal transmission and reception of data in the substrate processing device 200 is performed in accordance with the instructions of the signal transmission and reception instruction unit 406, which is also a function of the CPU 401.

A network signal transceiver 283 is provided which is connected to the host device 270 via a network. The network signal transceiver 283 can receive information about the processing history or scheduled processing of the wafers 100 in the batch, etc.

The memory device 403 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The memory device 403 can read and store a process recipe 409 recording a procedure or condition for substrate processing or a control program 410 for controlling the operation of the substrate processing device. In addition, it has a temperature memory unit 411 that records the temperature data measured by the temperature measuring unit 221 or can read the temperature data.

In addition, the process recipe 409 is combined to enable each program of the substrate processing process described later to be executed on the controller 400, and a predetermined result can be obtained as a program function. Hereinafter, the process recipe 409 or the control program 410, etc. are also collectively referred to as a program. In addition, when the term program is used in this specification, it may include only the process recipe 409 alone, only the control program 410 alone, or both of them. In addition, the RAM 402 is configured as a memory area (work area) that temporarily retains the program or data read by the CPU 401.

The I/O port 404 is connected to the gate valve 149, the lifting unit 218, the DP275, the heater control unit 223 and other components.

CPU401 is configured to read the control program 410 from the memory device 403 and read the process recipe 409 from the memory device 403 according to the input of the operation instruction from the input/output device 281. Then, CPU401 is configured to control the opening and closing action of the gate valve 149, the lifting and lowering action of the lifting part 218, the temperature measuring part 221, the heater control part 223, the ON/OFF control of DP275, the flow adjustment action of MFC263, the valve, etc. according to the content of the read process recipe 409.

In addition, the controller 400 uses an external memory device (e.g., a magnetic disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 282 in which the above-mentioned program is recorded and stored to install the program on a computer, etc., thereby constituting the controller 400 of the present technology. In addition, the means for supplying the program to the computer is not limited to the case of supplying it through the external memory device 282. For example, a communication means such as the Internet or a dedicated line may be used to supply the program without supplying it through the external memory device 282. In addition, the memory device 403 or the external memory device 282 is configured as a computer-readable recording medium. Hereinafter, these may also be collectively referred to as recording media. In addition, when the term recording medium is used in this manual, it may include only the storage device 403 unit, only the external storage device 282 unit, or both.

(2) Substrate processing steps

Next, FIG. 4 is mainly used to explain the substrate processing process of using the substrate processing device 200 of the above-mentioned structure to process the wafer 100 as a process of the semiconductor manufacturing process. In addition, in the following description, the actions of each part constituting the substrate processing device are controlled by the controller 400.

(Substrate loading process S202)

The substrate loading step S202 is described. Here, the wafer 100 waiting in the vacuum transfer chamber (not shown) is loaded into the processing chamber 201.

Specifically, the substrate mounting table 212 is lowered to the transfer position of the wafer 100, and the lifting pin 207 is passed through the through hole 214 of the substrate mounting table 212. As a result, the lifting pin 207 will be in a state where it protrudes only a predetermined height portion from the substrate mounting surface 211.

Next, the gate valve 149 is opened to connect the transfer chamber 206 with the adjacent vacuum transfer chamber. Then, the unillustrated vacuum transfer robot arm will place the wafer 100 on the lifting pins 207.

Once the wafer 100 is placed on the lifting pins 207, the substrate mounting table 212 is raised, the wafer 100 is placed on the substrate mounting surface 211, and further raised to the substrate processing position shown in FIG. 1.

(Film forming process S204)

Next, the film forming step S204 is described.

Once the substrate mounting table 212 is moved to the substrate processing position, the atmosphere is exhausted from the processing chamber 201 through the exhaust pipe 272 to adjust the pressure in the processing chamber 201.

Here, the wafer 100 is placed on the substrate mounting surface 211 and heated by the heater 213. When the pressure is adjusted to a predetermined value and the temperature of the wafer 100 reaches a predetermined value, a processing gas is supplied from the gas supply unit to the wafer 100 to form a predetermined film. For example, a silicon (Si)-containing gas is supplied to the wafer 100 to form a Si-containing film on the wafer 100. At this time, a Ge-containing gas can also be supplied to form a SiGe film.

(Substrate removal process S206)

Next, the substrate unloading process S206 is described.

Once the desired film thickness is formed, the substrate stage 212 is lowered to the transfer position of the wafer 100, and the wafer 100 is placed on the lift pins 207. Then, the gate valve 149 is opened, and the wafer 100 on the lift pins 207 is moved from the transfer chamber 206 to the vacuum transfer chamber using a vacuum transfer robot.

(3) Gas consumption structure

In the conventional substrate processing apparatus, in the film forming step S204, a film may be formed from the top to the side of the wafer 100 and the substrate mounting surface 211. Therefore, the wafer 100 may be stuck to the substrate mounting surface 211. When the wafer 100 is stuck to the substrate mounting surface 211, the substrate unloading step S206 is performed, and the substrate mounting table 212 is lowered to the conveying position of the wafer 100, and when the wafer 100 is to be moved from the substrate mounting table 212, it is conceivable that the film formed across the wafer 100 and the substrate mounting surface 211 will be peeled off and become particles. In addition, when the strength of the film is high, there is a concern that it is difficult to peel the wafer 100 from the substrate mounting surface 211.

In order to avoid the generation of particles in the substrate unloading process S206, the present inventors have implemented a gas consumption structure 215 in the film forming process S204 to avoid the formation of a film from the top to the side of the wafer 100 and the substrate mounting surface 211. The specific structure of the gas consumption structure 215 is described below.

The gas consumption structure 215 is configured to consume the supplied gas. Specifically, the gas consumption structure 215 has, for example, a gas adsorption structure that can adsorb gas as described later or a gas flow path R that allows gas to pass (see FIG. 6 ). In this way, the flow of the supplied gas of the wafer 100 can be operated (controlled). In this specification, the so-called consumption of gas includes the concept of adsorbing gas or passing gas.

As shown in FIG5 , the gas consumption structure 215 is isolated from the wafer 100 placed on the substrate placement surface 211 and is disposed on the substrate placement surface 211. The gas consumption structure 215 is composed of a first portion 215a and a second portion 215b. The first portion 215a is disposed on the outer periphery of the substrate placement surface 211 along the circumferential direction of the substrate placement surface 211, and the second portion 215b is disposed on the first portion 215a along the circumferential direction of the substrate placement surface 211. The first portion 215a and the second portion 215b are respectively disposed to surround the sides of the wafer 100 placed on the substrate placement surface 211 (substrate support portion 210), and are configured to form a ring in a plan view (see FIG6 ).

By providing such a gas consumption structure 215, the flow of the processing gas flowing in the horizontal direction at the periphery of the wafer 100 (hereinafter also referred to as "gas flow 1", refer to arrow 1 in FIG5) will be dispersed into: the flow of the processing gas flowing in the vertical direction between the side surface of the wafer 100 and the side surface of the second part 215b (hereinafter also referred to as "gas flow 2", refer to arrow 2 in FIG5); and the flow of the processing gas flowing in the horizontal direction on the second part 215b (hereinafter also referred to as "gas flow 3", refer to arrow 3 in FIG5). In this case, a low-stress film X can also be formed between the wafer 100 and the second part 215b (refer to FIG5). In this way, the formation of a film from the top to the side surface of the wafer 100 and the substrate mounting surface 211 can be avoided.

Furthermore, a countersunk portion C is provided on the outer periphery of the substrate mounting surface 211. The countersunk portion C is a countersunk portion (protruding) further downward than the substrate mounting surface 211, and the first portion 215a (gas consumption structure 215) is arranged on the countersunk portion C.

The second portion 215b is provided with a gas flow path R (see FIG. 6 ) for allowing gas to pass from the center of the wafer 100 toward the periphery. The gas flow path R may be a hole that passes through the second portion 215b from the center of the wafer 100 toward the periphery, or may be a groove formed under the second portion 215b.

The gas consumption structure 215 is configured so that the distance Y in the horizontal direction between the side surface of the wafer 100 and the side surface of the second portion 215b facing the side surface of the wafer 100 is shorter than the distance Z in the horizontal direction between the side surface of the wafer 100 and the side surface of the first portion 215a facing the side surface of the wafer 100 (see FIG. 5 ). By configuring the gas consumption structure 215 in this way, a space S can be formed by the wafer 100 placed on the substrate placement surface 211, the bottom surface of the second portion 215b, the side surface of the first portion 215a, and the outer periphery of the substrate placement surface 211. In this way, the gas flow 2 can be guided to the space S without being stagnated, so that the thickness of the film X can be reduced. As a result, the influence of the stickiness and adhesion of the film X can be reduced, so in the substrate unloading step S206, the wafer 100 can be easily placed on the lifting pins 207 and unloaded.

Furthermore, the distance Y is set to be constant along the periphery of the wafer 100 (see FIG. 6 ).

As described above, the gas consumption structure 215 is isolated from the wafer 100 placed on the substrate mounting surface 211. Specifically, the distance Y is set so that the difference between the speed (gas flow rate) of the gas flow 1 and the speed (gas flow rate) of the gas flow 3 is within a predetermined range. Here, the so-called "predetermined range" is a range in which the thickness of the film A formed on the outer periphery and the film B formed on the second part 215b are substantially the same when processing one wafer 100 (see Figure 5). In addition, the so-called "substantially the same thickness" of the film A and the film B means that the thickness of any part of the film A and the film B is measured, and the difference is within the range of ±5%.

Distance Y is set so that airflow 3 will be larger than airflow 2.

The gas consumption structure 215 is configured to maintain a constant gas consumption in the circumferential direction of the wafer 100.

The surface of the first portion 215a facing the side surface of the wafer 100 has a gas adsorption structure. In addition, the gas adsorption structure referred to in this specification is a porous structure formed by a porous material that can adsorb gas (easy to adsorb gas). The porous material can be, for example, activated carbon, diatomaceous earth, silica gel, or porous ceramics. The porous material can be one or more of the above.

The bottom of the second portion 215b forming the space portion S, the side surface of the first portion 215a, and the outer periphery of the substrate mounting surface 211 each have a gas adsorption structure.

The second portion 215b has a gas adsorption structure on the surface facing the side of the wafer 100, and is configured so that the gas consumption rate of the surface is higher than that of the wafer 100. In addition, it is ideal to configure the gas consumption rate of the upper portion of the surface to be the same as that of the wafer 100, and the gas consumption rate of the lower portion to be higher than that of the wafer 100.

The gas consumption structure 215 is configured such that the gas consumption rate of the first portion 215a is higher than that of the second portion 215b. Specifically, the gas consumption rate per unit area of the side surface of the first portion 215a is higher than that of the side surface and the bottom surface of the second portion 215b. More specifically, for example, the volume (surface area) of the gas adsorption structure per unit area of the side surface (the surface facing the side surface of the wafer 100) of the first portion 215a is larger than the volume (surface area) of the gas adsorption structure per unit area of the side surface (the surface facing the side surface of the wafer 100) and the bottom surface of the second portion 215b.

(4) Effects caused by this form

According to this form, one or more of the following effects can be obtained.

(a) By setting the distance Y to be shorter than the distance Z (see FIG. 5 ), the space S can be formed by the wafer 100 placed on the substrate placement surface 211, the bottom of the second portion 215b, the side of the first portion 215a, and the outer periphery of the substrate placement surface 211. In this way, the airflow 2 can be guided to the space S without being stagnant, so that the thickness of the film X formed between the wafer 100 and the second portion 215b can be reduced. As a result, the influence of the stickiness and adhesion of the film X can be reduced, so that in the substrate unloading step S206, the wafer 100 can be easily placed on the lifting pins 207, and the wafer 100 can be unloaded while avoiding the difficulty of the wafer 100 being peeled off from the film X.

(b) By setting the distance Y to be constant along the periphery of the wafer 100, the flow rate of the airflow 2 can be made constant in the circumferential direction of the wafer 100. As a result, the film thickness of the outer peripheral portion of the wafer 100 in the circumferential direction can be made uniform.

(c) By setting the distance Y within a predetermined range where the difference between the velocity of airflow 1 and the velocity of airflow 3 is within a predetermined range, that is, within a range where the thickness of film A and film B are substantially the same (see FIG. 5 ), the thickness of the film formed on the surface of wafer 100 can be made uniform. This is described below.

The thickness of the film A and the film B is substantially the same, which means that the airflow 3 does not stagnate on the second part 215b. The airflow 3 does not stagnate on the second part 215b, which means that the airflow 1 does not stagnate on the periphery of the wafer 100. The airflow 1 does not stagnate on the periphery of the wafer 100, which means that the flow speed of the processing gas is equal in the central part and the periphery of the wafer 100, that is, the thickness of the film formed on the surface of the wafer 100 is uniform. Therefore, by setting the distance Y so that the difference between the speed of the airflow 1 and the speed of the airflow 3 will form a predetermined range, the thickness of the film formed on the surface of the wafer 100 can be made uniform.

(d) The distance Y is set so that the airflow 3 is larger than the airflow 2. Thus, the processing gas (gas forming the airflow 2) flowing in the vertical direction between the side surface of the wafer 100 and the side surface of the second portion 215b can be fully adsorbed on the gas adsorption structure of the second portion 215b or the first portion 215a, so that the backflow of the airflow 2 can be more reliably suppressed.

(e) The gas consumption structure 215 is configured to make the gas consumption amount constant in the circumferential direction of the wafer 100, so that the gas consumption amount in the circumferential direction of the wafer 100 can be constant, and the film thickness of the outer peripheral part of the wafer 100 can be made uniform.

(f) The surface of the first portion 215a facing the side surface of the wafer 100 has a gas adsorption structure, which can suppress the backflow of the gas flow 2 and more reliably achieve the above-mentioned effect.

(g) The bottom of the second part 215b forming the space portion S, the side of the first part 215a, and the outer periphery of the substrate mounting surface 211 are provided with gas adsorption structures respectively, so that the volume of the gas adsorption structure can be increased and the amount of gas adsorption can be increased. As a result, the backflow of the airflow 2 can be reliably suppressed, and the above-mentioned effect can be reliably achieved.

(h) By providing a countersunk hole portion C on the periphery of the substrate mounting surface 211, the countersunk hole portion C is a countersunk hole (protruding) further downward than the substrate mounting surface 211, so that the volume of the gas adsorption structure can be increased, and the amount of gas adsorption can be increased. As a result, the backflow of the airflow 2 can be reliably suppressed, and the above-mentioned effect can be reliably achieved.

(i) The surface of the second portion 215b facing the side surface of the wafer 100 has a gas adsorption structure, and the gas consumption rate of the surface is higher than that of the wafer 100. In this way, the backflow of the airflow 2 can be reliably suppressed, and the above-mentioned effect can be reliably obtained. In addition, by making the gas consumption rate of the upper portion of the surface the same as that of the wafer 100, and making the gas consumption rate of the lower portion higher than that of the wafer 100, the backflow of the airflow 2 can be more reliably suppressed, and the above-mentioned effect can be reliably obtained.

(j) The gas consumption structure 215 is configured such that the gas consumption rate of the first portion 215a is higher than that of the second portion 215b. Specifically, the gas consumption rate per unit area of the side surface of the first portion 215a is higher than that of the side surface and the bottom surface of the second portion 215b. More specifically, for example, the volume (surface area) of the gas adsorption structure per unit area of the side surface (the surface facing the side surface of the wafer 100) of the first portion 215a is larger than the volume (surface area) of the gas adsorption structure per unit area of the side surface (the surface facing the side surface of the wafer 100) and the bottom surface of the second portion 215b. In this way, the backflow of airflow 2 can be effectively suppressed, and the above-mentioned effect can be effectively achieved.

(k) The second portion 215b has a gas flow path R (see FIG. 6 ) through which the gas passes from the center of the wafer 100 toward the periphery. Thus, for example, the gas that cannot be completely adsorbed by the gas adsorption structure can pass through the gas flow path R, thereby more reliably suppressing the backflow of the gas flow 2.

<Other forms of this case>

The above specifically describes the form of this case. However, this case is not limited to the above form, and various changes can be implemented within the scope of its main purpose.

Although not described in the above-mentioned form, a portion of the surface facing the side of the wafer 100 in the first part 215a may have a convex portion T protruding toward the side of the wafer 100 (see FIG. 7 ). In this case, it is ideal that the surface facing the side of the wafer 100 in the first part 215a including the convex portion T has a gas adsorption structure. In this way, the volume of the gas adsorption structure can be increased, and the amount of gas adsorption can be increased. In this form, the same effect as the above-mentioned form can be obtained.

In the above-mentioned form, the cross-sectional area of the gas flow path R provided in the second part 215b is the same as that of the gas flow path R, but the present invention is not limited to this. For example, the cross-sectional area of the gas flow path R1 provided near the exhaust pipe 272 may be smaller than the cross-sectional area of other gas flow paths R (see FIG. 8 ). The same effect as that of the above-mentioned form can be obtained in this form. Moreover, in this form, the exhaust amount of gas in the gas flow path R1 provided with the exhaust pipe 272 nearby increases, so by setting its cross-sectional area smaller than the cross-sectional area of the gas flow path R, the exhaust amount of gas around the wafer 100 can be made uniform. As a result, the processing around the wafer 100 can be made uniform.

Although not described in the above-mentioned form, a gas backflow suppression structure D (see FIG. 9 ) for suppressing the backflow of the gas flowing into the space S may be provided below the second portion 215b. The same effect as the above-mentioned form can be obtained in this form. Moreover, the backflow of the gas flowing into the space S can be further and more reliably suppressed in this form.

In the above-mentioned form, the case where the distance Y is set in a manner that the difference between the speed of airflow 1 and the speed of airflow 3 can be within a predetermined range is taken as an example for explanation, but the present case is not limited to this. For example, the upper position (upper end position) of the first part 215a can also be set in a manner that the difference between the speed of airflow 1 and the speed of airflow 3 can be within a predetermined range. This case can also achieve the same effect as the above-mentioned form.

The recipe used in each process is prepared individually according to the process content, and is preferably recorded and stored in the memory device 403 via an electrical communication line or an external memory device 282. Then, when each process is started, the CPU 401 will select an appropriate recipe from the multiple recipes recorded and stored in the memory device 403 according to the process content. In this way, a variety of film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility in one substrate processing device. In addition, the burden on the operator can be reduced, and each process can be started quickly while avoiding operation failures.

The above-mentioned recipe is not limited to the case of newly making, for example, it can also be prepared by changing an existing recipe installed in a substrate processing device. When changing the recipe, the changed recipe can also be installed in the substrate processing device via an electrical communication line or a recording medium recording the recipe. In addition, the input/output device 122 of the existing substrate processing device can also be operated to directly change the existing recipe installed in the substrate processing device.

The above-mentioned form is an example of forming a film using a batch-type substrate processing device that processes multiple substrates at a time. This case is not limited to the above-mentioned form, and can also be well applied to the case of forming a film using a single-piece substrate processing device that processes one or more substrates at a time. In addition, the above-mentioned form is an example of forming a film using a substrate processing device with a hot wall type processing furnace. This case is not limited to the above-mentioned form, and can also be well applied to the case of forming a film using a substrate processing device with a cold wall type processing furnace.

When using such substrate processing devices, the same processing procedures and processing conditions as the above-mentioned forms or variations can be used to perform various processes, and the same effects as the above-mentioned forms or variations can be obtained.

The above-mentioned forms or variations can be used in combination as appropriate. The processing procedures and processing conditions at this time can be set to be the same as those of the above-mentioned forms or variations, for example.

1,2,3: airflow

100: Wafer (substrate)

210: Substrate support part

211: Substrate mounting surface

215: Gas consumption structure

215a: First part

215b: Second part

A, B: membrane

C: Countersunk hole

S: Space Department

X: membrane

Y: distance

Z: distance

Claims (20)

A substrate processing device, characterized by comprising: a processing chamber for processing a substrate; a gas supply unit capable of supplying gas to the substrate; a substrate support unit for supporting the substrate; and a gas consumption structure, which comprises: a first portion configured to surround the side of the substrate when the substrate is supported on the substrate support unit; and a second portion disposed on the first portion and configured to surround the side of the substrate, and configured such that the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is shorter than the horizontal distance between the side of the substrate and the side of the first portion facing the side of the substrate. A substrate processing device as described in claim 1, wherein the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is set so that the difference between the gas flow rate at the periphery of the substrate and the gas flow rate on the top of the second portion is within a predetermined range. The substrate processing apparatus as recited in claim 2, wherein the predetermined range is a range in which the thickness of the film formed on the outer peripheral portion of the substrate and the thickness of the film formed on the second portion are substantially the same. A substrate processing apparatus as recited in claim 2, wherein the distance is set to be constant along the periphery of the substrate. In the substrate processing apparatus as recited in claim 1, the gas consumption structure is configured to maintain a constant gas consumption amount in the circumferential direction of the substrate. In the substrate processing apparatus as recited in claim 1, a surface of the first portion facing the side surface of the substrate has a gas adsorption structure capable of adsorbing the gas. In the substrate processing apparatus as recited in claim 1, the second portion is configured such that a gas consumption rate of a surface that coincides with a side surface of the substrate is higher than a gas consumption rate of the substrate. In the substrate processing apparatus as recited in claim 1, a gas consumption rate per unit area of the side surface of the first portion is higher than a gas consumption rate per unit area of the side surface and the bottom surface of the second portion. A substrate processing device as described in claim 1, wherein the horizontal distance between the side of the aforementioned substrate and the side of the aforementioned second part facing the side of the aforementioned substrate is set so that the airflow passing through the aforementioned second part will be larger than the airflow passing between the side of the aforementioned substrate and the side of the aforementioned second part in the vertical direction. The substrate processing device as described in claim 1, wherein the space portion is formed by the outer periphery of the support surface supporting the substrate in the substrate support portion, the side surface of the first portion and the bottom surface of the second portion, and the outer periphery, the side surface and the bottom surface respectively have gas adsorption structures capable of adsorbing the gas. The substrate processing device as described in claim 1, wherein the surface of the first portion facing the side surface of the substrate has a gas adsorption structure capable of adsorbing the gas, and a portion of the surface of the first portion facing the side surface of the substrate has a convex portion protruding toward the side surface of the substrate. The substrate processing apparatus as recited in claim 1, wherein the second portion includes a gas flow path for allowing the gas to pass in a direction from the center of the substrate toward the periphery. The substrate processing apparatus as recited in claim 10, wherein the gas adsorption structure is configured such that a gas consumption rate of the first portion is higher than a gas consumption rate of the second portion. The substrate processing device as described in claim 1, wherein a countersunk portion is provided on the periphery of the supporting surface supporting the substrate in the substrate supporting portion, and the countersunk portion is countersunk further downward than the supporting surface, and the first portion is arranged on the countersunk portion. The substrate processing apparatus as recited in claim 12, wherein the gas flow path is formed in a groove below the second portion. The substrate processing device as recited in claim 12, wherein an exhaust section for exhausting the gas from the peripheral direction of the substrate is provided in the processing chamber, the exhaust section has an exhaust pipe, and the cross-sectional area of the gas flow path provided at a position close to the exhaust pipe is configured to be smaller than the cross-sectional area of other gas flow paths. The substrate processing apparatus as recited in claim 10, wherein a gas backflow suppressing structure for suppressing a backflow of the gas flowing into the space is provided below the second portion. A substrate processing method, characterized by comprising: A process of supporting a substrate on a substrate support portion; A process of supplying gas to the substrate and processing the substrate; A process of controlling the gas supplied to the substrate using a gas consumption structure, The gas consumption structure comprises: A first portion configured to surround the side of the substrate when the substrate is supported on the substrate support portion; and A second portion configured to surround the side of the substrate and disposed on the first portion, The second portion is configured such that the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is shorter than the horizontal distance between the side of the substrate and the side of the first portion facing the side of the substrate. A method for manufacturing a semiconductor device, characterized by comprising: A step of supporting a substrate on a substrate support portion; A step of supplying gas to the substrate and processing the substrate; A step of controlling the gas supplied to the substrate using a gas consumption structure, The gas consumption structure comprises: A first portion that is configured to surround the side of the substrate when the substrate is supported on the substrate support portion; and A second portion that is disposed on the first portion and is configured to surround the side of the substrate, The second portion is configured such that the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is shorter than the horizontal distance between the side of the substrate and the side of the first portion facing the side of the substrate. A program that uses a computer to implement the following program on a substrate processing device, a program for supporting a substrate on a substrate support portion; a program for supplying gas to the substrate and processing the substrate; a program for controlling the gas supplied to the substrate using a gas consumption structure, the gas consumption structure comprising: a first portion that is configured to surround the side of the substrate when the substrate is supported on the substrate support portion; and a second portion that is disposed on the first portion and configured to surround the side of the substrate, and configured so that the horizontal distance between the side of the substrate and the side of the second portion facing the side of the substrate is shorter than the horizontal distance between the side of the substrate and the side of the first portion facing the side of the substrate.