TWI879169B - Plasma reaction device, corrosion-resistant component and method for forming the same - Google Patents

Abstract

The present invention discloses a plasma reaction device, a corrosion-resistant component and a method for forming the same. The corrosion-resistant component includes: a first ceramic layer having first grains; a second ceramic layer located on the first ceramic layer and having second grains, wherein the average size of the second grains is smaller than the average size of the first grains, and the second ceramic layer is exposed to a corrosive environment; and both the first ceramic layer and the second ceramic layer contain rare earth metals. Since the average size of the second grains of the corrosion-resistant component provided by the present invention is smaller, the second ceramic layer located on the surface of the first ceramic layer can form a flatter and smoother surface after sintering, and there are fewer depressions on the surface, so that when the plasma passes through the surface of the second ceramic layer, it is not easy to accumulate, adsorb or deposit in the depressions. In the actual service process, it can reduce the corrosion effect on the surface of the ceramic material, reduce the formation of micro-particle pollutants, and improve the performance of the cavity.

Description

Plasma reaction device, corrosion-resistant component and method for forming the same

The present invention relates to the field of plasma, and in particular to a plasma reaction device, a corrosion-resistant component and a forming method thereof.

In the prior art, a coating is applied on the surface of the components of the plasma device to protect the components from plasma corrosion. With the continuous improvement of the aspect ratio requirements in the plasma etching process, the power of the etching process has been increased, the number of steps has increased, and the plasma corrosion environment of the components has become increasingly harsh. The intensity of the coating being subjected to plasma physical bombardment and chemical corrosion has been greatly enhanced, making the existing coating more susceptible to corrosion, generating tiny particles that are scattered on the substrate or in the cavity, causing pollution.

An object of the present invention is to provide a corrosion-resistant component to improve corrosion resistance.

In order to achieve the above-mentioned purpose, the present invention provides a corrosion-resistant component for a plasma processing device, comprising: A first ceramic layer having first grains; A second ceramic layer located on the first ceramic layer, having second grains, the average size of the second grains being smaller than the average size of the first grains, and the second ceramic layer being exposed to a corrosive environment; Both the first ceramic layer and the second ceramic layer contain rare earth metals.

Optionally, the rare earth metals in the first ceramic layer and the second ceramic layer are any one or more of tantalum, yttrium, yttrium, thorium, erbium, neodymium, bismuth, sulphurium, mesoporous, gadolinium, aluminum, ruthenium, tantalum, beryl, thorium, and erbium.

Optionally, the materials of the first ceramic layer and the second ceramic layer are any one or more of rare earth metal oxides, rare earth metal fluorides or rare earth metal oxyfluorides.

Optionally, the first ceramic layer and the second ceramic layer are made of the same material.

Optionally, the first ceramic layer is further provided with a first hole structure penetrating the thickness thereof, the second ceramic layer is at least located on the inner wall of the first hole structure, and the second ceramic layer is further provided with a second hole structure penetrating along the thickness direction of the first ceramic layer.

Optionally, the average size of the first grains is greater than 10 μm; and the average size of the second grains is less than 5 μm.

Optionally, the corrosion-resistant component is any one or more of a cover plate, a gas nozzle, a focusing ring, an insulating ring or a cover ring.

Optionally, the invention further comprises: a component body, wherein the first ceramic layer is located on the component body.

Optionally, the corrosion-resistant component is at least one of a gas shower head or an electrostatic chuck.

Optionally, the component body includes a third hole structure, the first ceramic layer is located on the inner surface of the third hole structure, the first ceramic layer also has a first hole structure penetrating its thickness, the second ceramic layer is at least located on the inner wall of the first hole structure, and the second ceramic layer also has a second hole structure penetrating along the thickness direction of the first ceramic layer.

The present invention also provides a plasma reaction device, comprising: a reaction chamber, wherein the reaction chamber is a plasma environment; and the corrosion-resistant component of the above-mentioned plasma processing device, wherein the corrosion-resistant component is exposed to the plasma environment.

Optionally, the plasma reaction device is an inductively coupled plasma reaction device or a capacitively coupled plasma reaction device.

Optionally, the aspect ratio of the process of the plasma reaction device ranges from 10:1 to 200:1.

The present invention also provides a method for forming a corrosion-resistant component, comprising: Providing a first powder; using the first powder to form the first ceramic layer, the first ceramic layer having first grains; Providing a second powder; using the second powder to form a second ceramic layer on the first ceramic layer, the second ceramic layer having second grains, the average size of the second grains being smaller than the average size of the first grains; Both the first ceramic layer and the second ceramic layer contain rare earth metals.

Optionally, the method of forming the first ceramic layer using the first powder includes: Using the first powder to form a slurry of the first powder; granulating the slurry containing the first powder to obtain a first particle; shaping the first particle to obtain a first green embryo, and the first green embryo is used to prepare the first ceramic layer; The method of forming the second ceramic layer using the second powder includes: Using the second powder to form a slurry of the second powder; granulating the slurry containing the second powder to obtain a second particle; covering the surface of the first green embryo with the second particle, shaping the second particle to obtain a second green embryo, and the second green embryo is used to prepare the second ceramic layer; Firing the embryo body containing the first green embryo and the second green embryo to obtain the corrosion-resistant component.

Optionally, the first green embryo has a first hole structure, the second green embryo is at least located on the inner wall of the first hole structure, and the second green embryo also has a second hole structure; The method for forming the first green embryo and the first hole structure includes: providing a first ejector pin; making the slurry of the first powder form a first green embryo that wraps the first ejector pin around the first ejector pin, and after removing the first ejector pin, the first hole structure is formed; The method for forming the second green embryo and the second hole structure includes: providing a second ejector pin, the diameter of the second ejector pin is smaller than the diameter of the first ejector pin; placing the second ejector pin in the first hole structure, filling the gap between the second ejector pin and the first hole structure with the slurry of the second powder to form a second green embryo, and after removing the second ejector pin, the second hole structure is formed.

Optionally, the green body is fired at 1000° C.-2500° C. in an atmospheric atmosphere to obtain the corrosion-resistant component.

Optionally, when the embryo is fired, first pores are formed in the first ceramic layer, second pores are formed in the second ceramic layer, and the size of the first pores is larger than the size of the second pores; the number of the first pores is larger than the number of the second pores.

Optionally, a first powder, a binder less than 10% by mass, and a dispersant less than 5% by mass are mixed, and a slurry containing the first powder is obtained after stirring; A second powder, a binder less than 10% by mass, and a dispersant less than 5% by mass are mixed, and a slurry containing the second powder is obtained after stirring.

Optionally, the binder is polyvinyl alcohol; and the dispersant is polyethylene glycol.

Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects: (1) The corrosion-resistant component for plasma processing equipment provided by the present invention comprises a first ceramic layer formed by first crystal grains and a second ceramic layer formed by second crystal grains. Since the average size of the second crystal grains is smaller, the second ceramic layer located on the surface of the first ceramic layer can form a flatter and smoother surface after sintering, and there are fewer depressions on the surface, so that when the plasma passes through the surface of the second ceramic layer, it is not easy to accumulate, adsorb or deposit in the depressions. In the actual service process, it can reduce the corrosion effect on the surface of the ceramic material, reduce the formation of micro-particle pollutants, and improve the performance of the cavity. (2) The method for forming the corrosion-resistant component provided by the present invention first obtains a preformed first green embryo under a first pressure, covers the surface of the preformed first green embryo with a second particle, and then obtains a fully formed first green embryo and a second green embryo under a second pressure, which simplifies the operation. (3) The corrosion-resistant component provided by the present invention for a plasma processing device comprises a first ceramic layer and a second ceramic layer located on the first ceramic layer. In a high aspect ratio and high power process, the rare earth metals in the first ceramic layer and the second ceramic layer are any one or more of Ho, Er, Tm, Yb, and Lu. Compared with yttrium, these rare earth metals have a smaller atomic radius and a larger atomic mass, and therefore have a stronger tolerance to the physical bombardment and chemical corrosion of plasma.

The technical solution of the present invention will be described clearly and completely below in conjunction with the drawings. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative labor are within the scope of protection of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating directions or positional relationships, are based on directions or positional relationships shown in the drawings, and are only used to facilitate the description of the present invention and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal connection of two components. For those with ordinary knowledge in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

As shown in FIG1 , the present invention provides a corrosion-resistant component for a plasma treatment device, comprising: a first ceramic layer 1 having first grains; a second ceramic layer 2, which is located on the first ceramic layer 1 and has second grains. The average size of the second grains located on the surface layer is smaller than the average size of the first grains located in the bulk layer. In some embodiments, the average size of the first grains is greater than 10 μm, and the average size of the second grains is less than 5 μm. The corrosion-resistant component of the present invention is exposed to a plasma environment.

The first ceramic layer 1 and the second ceramic layer 2 both contain rare earth metals, and the rare earth metals in the first ceramic layer and the second ceramic layer are at least one of Sc, Yttrium, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. The materials of the first ceramic layer 1 and the second ceramic layer 2 are any one of rare earth metal oxides, rare earth metal fluorides or rare earth metal fluoride oxides.

In one embodiment, the aspect ratio of the process of the plasma reaction device ranges from 10:1 to 200:1. The larger the aspect ratio, the larger the directional etching (physical etching effect) required to be used, and thus the higher the RF power. Thus, in order to obtain a smaller line width, the RF power of the plasma reaction device is set to be greater than or equal to 10,000 W. The higher the RF power, for example, the RF power is greater than or equal to 10,000 W, the more suitable it is for preparing an etching process with a high aspect ratio.

In a high aspect ratio and high power process, the rare earth metal in the first ceramic layer 1 and the second ceramic layer 2 is any one or more of Ho, Er, Tm, Yb, and Lu. The metal elements constituting the first ceramic layer 1 and the second ceramic layer 2 have chemical stability similar to that of yttrium, but are more resistant to physical bombardment and chemical corrosion of plasma, and have better corrosion resistance than existing yttrium-containing coatings. In some embodiments, the first ceramic layer 1 and the second ceramic layer 2 are made of the same material.

Generally speaking, the larger the grain size, the larger the pore size formed by grain shrinkage during the sintering process. Therefore, the surface undulation of the ceramic body obtained by sintering large-sized grains is large, with uneven protrusions and depressions, and blind holes are easily formed between adjacent protrusions. Microstructures such as protrusions, depressions and blind holes are all at the micron level, while the active atoms and molecules in the plasma are at the angstrom level, which is much smaller than the size of the microstructure. When the plasma flows through the surface, it will preferentially accumulate, adsorb or deposit in the depressions or blind holes, accelerating the degree of corrosion in this area. When the depression is hit, the protruding structures on both sides of the depression will fall off from the surface, lose their protective function, and form micro-particle pollution. Plasma accumulation in the blind hole will further extend the hole of the blind hole into the bulk layer, destroying the stability of the ceramic material.

The corrosion-resistant component of the present invention is composed of two grains of different sizes. The second grains of small size are arranged on the first grains of large size, and the second ceramic layer 2 is used as the surface in contact with the plasma. The first ceramic layer 1 and the second ceramic layer 2 are formed by granulating, molding and sintering powder particles. During the sintering process, first pores 10 are formed in the first ceramic layer 1, and second pores 20 are formed in the second ceramic layer 2. Since the size of the second grains is small, the size of the first pores 10 is larger than the size of the second pores 20; and the second grains are located on the surface, and the closed pores formed between the grains have a shorter path to the surface than the second pores, so the number of first pores 10 is greater than the number of second pores 20. Since the second pores 20 are smaller in size and fewer in number, the surface of the second ceramic layer 2 is flatter and smoother than the first ceramic layer 1, and the plasma can flow smoothly on the surface of the second ceramic layer 2, reducing the aggregation of plasma on the surface, reducing the corrosion of the plasma on the surface of the corrosion-resistant component, reducing the formation of micro-particle pollutants, and improving the performance of the cavity. The large-sized first grains are arranged at the bottom of the corrosion-resistant component, so that the sintered first ceramic layer 1 has sufficient mechanical strength.

FIG2 is a schematic diagram of the structure of a corrosion-resistant component including a pore structure. The first ceramic layer 1 is provided with a first pore structure penetrating the thickness thereof, the second ceramic layer is at least located on the inner wall of the first pore structure, and the second ceramic layer 2 is also provided with a second pore structure 21 penetrating along the thickness direction of the first ceramic layer 1. When the corrosion-resistant component is used, the corrosive gas flows from top to bottom along the center line A-A' of the second pore structure 21 of the corrosion-resistant component in FIG2. Optionally, the first pore structure and the second pore structure are through holes or blind holes. The first pore structure and the second pore structure are any one or more of straight holes, inclined holes, and arc holes.

For the corrosion-resistant component, after cutting along the plane where the center line of the second hole structure 21 is located, the left part of the center line is rotated 90° counterclockwise, and its microstructure can be shown in Figure 1. The solid line in Figure 1 is the center line A-A' of the second hole structure 21, the dotted line represents plasma, and the arrow indicates the flow direction of the corrosive gas. The second ceramic layer 2 has a small pore size, a small number of pores, and a smooth surface. Therefore, the plasma can flow smoothly through the surface of the second hole structure 21 and is not easy to accumulate on the surface of the second hole structure.

In some embodiments, the second ceramic layer may be further disposed on the surface of the first ceramic layer so that the plasma can flow smoothly on the surface of the first ceramic layer.

The corrosion-resistant component provided by the present invention can be used in a plasma processing device. The plasma processing device is composed of components of various different materials. The corrosion-resistant component of the present invention is a ceramic body. For components formed of ceramic materials, the corrosion-resistant component of the present invention can be directly used as the component. For components formed of other materials, such as components of metal materials, the first ceramic layer of the present invention can be covered on the component body, for example, on the surface of the component body, to protect the component body from plasma corrosion. In some embodiments, the component body includes a third hole structure, the first ceramic layer is located on the inner surface of the third hole structure, and the first ceramic layer is also provided with a first hole structure penetrating its thickness, the second ceramic layer is at least located on the inner wall of the first hole structure, and the second ceramic layer is also provided with a second hole structure penetrating along the thickness direction of the first ceramic layer.

As shown in FIG3 , the present invention provides a capacitive coupled plasma (CCP) reaction device, comprising: a vacuum reaction chamber 100, a gas shower head 110 is arranged in the reaction chamber 100, and the gas shower head 110 is connected to a gas supply device 111 for transporting reaction gas to the vacuum reaction chamber and serving as an upper electrode of the vacuum reaction chamber. A gas shower head 110 and a base 121 disposed opposite to the gas shower head 110 are disposed in the reaction chamber. The gas shower head 110 is connected to a gas supply device 111 for delivering reaction gas to the vacuum reaction chamber and serving as the upper electrode of the vacuum reaction chamber. An electrostatic chuck 120 is disposed above the base 121, and electrostatic suction is generated by the electrostatic chuck 120 to support and fix the substrate W to be processed during the process. The electrostatic chuck 120 also serves as the lower electrode of the vacuum reaction chamber, and a reaction area is formed between the upper electrode and the lower electrode. At least one RF power source 130 is applied to one of the upper electrode or the lower electrode through a matching network 131, generating a RF electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above-mentioned active particles can undergo a variety of physical and chemical reactions with the surface of the substrate W to be processed, so that the morphology of the surface of the substrate W to be processed changes, that is, the etching process is completed.

A focusing ring 122 and an insulating ring 123 are arranged around the base 121, and the insulating ring 123 is arranged below the focusing ring 122. The focusing ring 122 and the insulating ring 123 are used to adjust the electric field or temperature distribution around the substrate to improve the uniformity of substrate processing. A covering ring 124 is arranged around the focusing ring 122, mainly used to prevent plasma corrosion.

In one embodiment, the first ceramic layer 1 and the second ceramic layer 2 can be used alone as corrosion-resistant components, for example, any one or more of the focusing ring 122, the insulating ring 123 or the covering ring 124.

In another embodiment, the first ceramic layer and the second ceramic layer cannot be used as corrosion-resistant components alone, and need to be provided on a component body to serve as corrosion-resistant components together. The corrosion-resistant components that need to include the component body are: the corrosion-resistant component is at least one of the gas shower head 110 or the electrostatic chuck 120.

As shown in FIG4 , the present invention provides an inductively coupled plasma (ICP) reaction device, comprising: a vacuum reaction chamber 200, a gas injection port 201 is provided on the side wall of the reaction chamber, and a gas nozzle 202 is provided therein. A cover plate 213 is provided on the top of the reaction chamber 200, an inductively coupled coil 210 is connected to the cover plate 213, and an RF power source 211 applies an RF voltage to the inductively coupled coil 210 through an RF matching network 212. The RF power of the RF power source 211 drives the inductively coupled coil 210 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas in the reaction chamber is ionized to generate plasma. An electrostatic chuck assembly is disposed at the bottom of the reaction chamber 200, including an electrostatic chuck 220 and a base 221. The electrostatic chuck 220 is disposed above the base 221, and electrostatic suction is generated by the electrostatic chuck 220 to support and fix the substrate W to be processed during the process. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, which can undergo a variety of physical and chemical reactions with the surface of the substrate W to be processed, so that the morphology of the surface of the substrate W to be processed changes, that is, the etching process is completed.

A focusing ring 222 and an insulating ring 223 are arranged around the base 221, and the insulating ring 223 is arranged below the focusing ring 222. The focusing ring 222 and the insulating ring 223 are used to adjust the electric field or temperature distribution around the substrate W to improve the uniformity of substrate processing. A cover ring 224 is arranged around the focusing ring 222, mainly used to prevent plasma corrosion.

In one embodiment, the first ceramic layer 1 and the second ceramic layer 2 can be used alone as corrosion-resistant components, such as any one or more of the cover plate 213, the gas nozzle 202, the focusing ring 222, the insulating ring 223 or the cover ring 224.

In another embodiment, the first ceramic layer and the second ceramic layer cannot be used as corrosion-resistant components alone, and need to be provided on a component body to serve as corrosion-resistant components together. The corrosion-resistant components that need to be included in the component body are: electrostatic chuck 220.

FIG5 is a flow chart of a method for forming a corrosion-resistant component of the present invention, the method comprising:

Step S1: Mixing.

A first powder, a binder less than 10% by mass, and a dispersant less than 5% by mass are mixed, and after stirring, a slurry containing the first powder is obtained; a second powder, a binder less than 10% by mass, and a dispersant less than 5% by mass are mixed, and after stirring, a slurry containing the second powder is obtained.

The D50 particle size of the first powder is larger than that of the second powder. Optionally, the D50 particle size of the first powder is 2 μm-10 μm, and the D50 particle size of the second powder is 0.1 μm-1 μm. Optionally, the binder is polyvinyl alcohol (PVA). Optionally, the dispersant is polyethylene glycol (PEG).

Step S2: Granulation.

The slurry containing the first powder is granulated to obtain the first granules; and the slurry containing the second powder is granulated to obtain the second granules.

Step S3: Molding.

The first particles are molded under a pressure lower than 50 MPa to obtain the first green embryo, and the first green embryo is used to prepare the first ceramic layer; the second particles are coated on the surface of the first green embryo through a binder, and the second particles are molded under a pressure of 100 MPa-500 MPa to obtain a second green embryo, and the second green embryo is used to prepare the second ceramic layer.

The molding pressure of the first powder is relatively low, and a pre-molded first green embryo is formed, and the first green embryo at this time has only a preliminary shape outline; after the second particles cover the surface of the pre-molded first green embryo, a higher pressure is applied to the first green embryo and the second green embryo to obtain a fully formed first green embryo and a second green embryo. Therefore, the present invention only needs to apply high pressure once to obtain a fully formed first green embryo and a second green embryo, and the operation is more simplified.

Optionally, the binder sprayed on the surface of the first green embryo is polyvinyl alcohol (PVA) with a mass concentration of 0-20%. The second particles can cover one surface of the first green embryo or all surfaces of the first green embryo.

Step S4: sintering.

The first green embryo and the second green embryo are sintered at 1000° C. to 2500° C. in an atmospheric atmosphere to obtain the corrosion-resistant component. The first crystal grains serving as the bulk layer are sintered from the first grains, and the second crystal grains located on the surface layer are sintered from the second grains.

When the embryo is fired, first pores are formed in the first ceramic layer, and second pores are formed in the second ceramic layer. The size of the first pores is larger than the size of the second pores, and the number of the first pores is larger than the number of the second pores.

Step S5: post-processing.

The sintered corrosion-resistant component can be further post-processed by polishing and/or cleaning to reduce the height difference of the surface particles and reduce the adsorption and deposition of gas byproducts or plasma on the surface of the second ceramic layer 2 under actual service conditions.

Through the above steps, a corrosion-resistant component without the first pore structure and the second pore structure is formed.

The method for forming a corrosion-resistant component having a first pore structure and a second pore structure specifically includes:

Step S1: Mixing.

The mixing method is the same as that of the above-mentioned corrosion-resistant parts without holes.

Step S2: Granulation.

The granulation method is the same as that of the above-mentioned corrosion-resistant component without pores.

Step S3: Molding.

In some embodiments, the first hole structure and the second hole structure are formed by a push pin. The method for forming the first green body and the first hole structure includes: providing a first push pin; preforming the first particle around the first push pin at a pressure lower than 50 MPa to form a first green body that wraps the first push pin, and after removing the first push pin, forming the first hole structure on the first green body, and the shape of the first hole structure is the shape of the first push pin. The method for forming the second green body and the second hole structure includes: providing a second push pin, the diameter of the second push pin is smaller than the diameter of the first push pin; coating the inner wall of the first hole structure with an adhesive, placing the second push pin in the first hole structure, filling the second particles in the gap between the second push pin and the first hole structure so that the second particles are bonded and cover the inner wall of the first hole structure, the second particles form a second green body wrapping the second push pin under a pressure of 100MPa-500MPa, and the first green body is completely formed under the pressure, and after removing the second push pin, the second hole structure is formed on the second green body, and the shape of the second hole structure is the shape of the second push pin.

In some embodiments, the first hole structure and the second hole structure are formed by mechanical processing. Under a pressure lower than 50 MPa, the first particles are preformed into a block-shaped first green embryo, and then the first hole structure is processed on the first green embryo by a drill. The inner wall of the first hole structure is coated with a binder, and the second particles are filled into the first hole structure. Under a pressure of 100 MPa-500 MPa, the first green embryo and the second green embryo are completely formed. Then, a drill with a smaller size is used to penetrate the second green embryo along the thickness direction of the first ceramic layer to form the second hole structure.

Since the size of the second hole structure is small, it is difficult to be processed by a drill and can only be formed by a push pin. Therefore, the first hole structure can be formed by mechanical processing and the second hole structure can be formed by a push pin. Under a pressure lower than 50 MPa, the first particle is preformed into a block-shaped first green embryo, and then the first hole structure is processed on the first green embryo by a drill. A second push pin is provided, wherein the diameter of the second push pin is smaller than the diameter of the first hole structure; an adhesive is coated on the inner wall of the first hole structure, the second push pin is placed in the first hole structure, and the second particles are filled in the gap between the second push pin and the first hole structure so that the second particles are bonded and cover the inner wall of the first hole structure; the second particles form a second green embryo wrapping the second push pin under a pressure of 100 MPa-500 MPa, and the first green embryo is completely formed under the pressure; after the second push pin is removed, the second hole structure is formed on the second green embryo, and the shape of the second hole structure is the shape of the second push pin.

Step S4: sintering.

The sintering method is the same as the above-mentioned non-porous ceramic material.

Step S5: post-processing.

The post-processing method is the same as the above-mentioned ceramic material without pores.

The corrosion-resistant components provided by the present invention may also generate particles after being used for a period of time, which may affect the use effect. Therefore, the present invention provides a method for detecting the service life of the corrosion-resistant components to determine whether the corrosion-resistant components have reached their service life so as to replace them in time, and also to detect whether the corrosion-resistant components are qualified before use.

As shown in FIG6 , high-pressure gas is introduced into the corrosion-resistant component along the plasma flow direction, and a wafer is placed at the outlet of the high-pressure gas to collect particles brought out from the corrosion-resistant component. In FIG7 , the corrosion-resistant component is a component with a second hole structure, and the method for testing the service life provided by the present invention is introduced by taking the situation of testing the particles in the second hole structure as an example.

As shown in FIG. 7 , the detection method includes:

Step S1: Introduce high-pressure gas.

High-pressure gas enters from one end of the second hole structure of the corrosion-resistant component and carries the particles out from the other end.

Step S2: Collecting particles.

A wafer 5 is placed at the outlet of the high-pressure gas, so that the particles 4 are scattered on the wafer 5, so as to collect the particles 4 brought out from the second hole structure of the corrosion-resistant component.

Step S3: Determine the service status of the workpiece and predict its service life.

The service life of the corrosion-resistant component is determined based on the size, composition, and distribution of the particles on the wafer 5.

The wafer 5 on which the particles 4 are collected is subjected to a particle test to determine the size of the particles 4 and their distribution on the wafer 5; the wafer 5 is then subjected to an electron spectroscopy (EDS) test to determine the composition of the particles 4. The size, composition and distribution information of the particles 4 are statistically analyzed to determine whether the components are in service or to predict their service life.

In summary, the corrosion-resistant component for the plasma treatment device provided by the present invention is formed by stacking two materials of different sizes. The bulk layer adopts large-sized grains to provide sufficient mechanical strength for the material, and the surface layer adopts small-sized grains to form a smoother and flatter surface. When the plasma flows through, it will not gather in the depressions on the surface, thereby reducing the corrosion effect of the plasma on the surface of the corrosion-resistant component, reducing the formation of tiny particle pollutants, and making the corrosion-resistant component have a longer service life.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After reading the above content, various modifications and substitutions of the present invention will be obvious to those skilled in the art. Therefore, the protection scope of the present invention should be limited by the scope of the attached patent application.

1: First ceramic layer 10: First air hole 2: Second ceramic layer 20: Second air hole 21: Second hole structure 4: Particles 5: Wafer 100: Reaction chamber 110: Gas shower head 111: Gas supply device 120: Electrostatic suction cup 121: Base 122: Focusing ring 123: Insulation ring 124: Cover ring 130: RF power supply 131: Matching network 200: Reaction chamber 201: Gas injection port 202: Gas nozzle 210: Inductively coupled coil 211: RF power source 212: Matching network 213: Cover plate 220: Electrostatic suction cup 221: Base 222: Focusing ring 223: Insulation ring 224: Covering ring W: Substrate to be processed A-A’: Center line S1~S5: Steps

FIG. 1 is a schematic diagram of the structure of a corrosion-resistant component for a plasma treatment device provided by the present invention. FIG. 2 is a schematic diagram of a corrosion-resistant component including a second hole structure provided by the present invention. FIG. 3 is a schematic diagram of the structure of a capacitively coupled plasma (CCP) reaction device provided by the present invention. FIG. 4 is a schematic diagram of the structure of an inductively coupled plasma (ICP) reaction device provided by the present invention. FIG. 5 is a flow chart of a method for forming a corrosion-resistant component for a plasma treatment device provided by the present invention. FIG. 6 is a schematic diagram of a method for detecting the service life of a corrosion-resistant component provided by the present invention. FIG. 7 is a flow chart of a method for detecting the service life of a corrosion-resistant component provided by the present invention.

1: First ceramic layer

10: First air hole

2: Second ceramic layer

20: Second air hole

A-A’: center line

Claims (19)

A corrosion-resistant component for a plasma processing device, comprising: a first ceramic layer having first grains; a second ceramic layer located on the first ceramic layer, having second grains, the average size of the second grains being smaller than the average size of the first grains, and the second ceramic layer being exposed to a corrosive environment; the first ceramic layer and the second ceramic layer both contain rare earth metals; wherein the average size of the first grains is greater than 10 μm; and the average size of the second grains is less than 5 μm. A corrosion-resistant component for a plasma treatment device as described in claim 1, wherein the rare earth metal in the first ceramic layer and the second ceramic layer is any one or more of arsenic, yttrium, yttrium, arsenic, erbium, neodymium, bismuth, sulphur, mesoporous, gadolinium, alumina, ruthenium, tantalum, beryl, thulium, tantalum and erbium. A corrosion-resistant component for a plasma processing device as described in claim 2, wherein the material of the first ceramic layer and the second ceramic layer is any one or more of rare earth metal oxides, rare earth metal fluorides or rare earth metal oxyfluorides. A corrosion-resistant component for a plasma processing device as described in claim 1, wherein the first ceramic layer and the second ceramic layer are made of the same material. A corrosion-resistant component for a plasma processing device as described in claim 1, wherein the first ceramic layer is provided with a first hole structure penetrating the thickness thereof, the second ceramic layer is at least located on the inner wall of the first hole structure, and the second ceramic layer is provided with a second hole structure penetrating along the thickness direction of the first ceramic layer. A corrosion-resistant component for a plasma processing device as described in claim 1, wherein the corrosion-resistant component is any one or more of a cover plate, a gas nozzle, a focusing ring, an insulating ring or a covering ring. The corrosion-resistant component for a plasma processing device as described in claim 1 further comprises: a component body, wherein the first ceramic layer is located on the component body. A corrosion-resistant component for a plasma processing device as described in claim 7, wherein the corrosion-resistant component is at least one of a gas shower head or an electrostatic chuck. A corrosion-resistant component for a plasma processing device as described in claim 8, wherein the component body includes a third hole structure, the first ceramic layer is located on the inner surface of the third hole structure, the first ceramic layer also has a first hole structure penetrating the thickness thereof, the second ceramic layer is at least located on the inner wall of the first hole structure, and the second ceramic layer also has a second hole structure penetrating along the thickness direction of the first ceramic layer. A plasma reaction device, comprising: a reaction chamber, wherein the reaction chamber is a plasma environment; and a corrosion-resistant component of a plasma processing device as described in any one of claims 1 to 9, wherein the corrosion-resistant component is exposed to the plasma environment. The plasma reaction device as described in claim 10, wherein the plasma reaction device is an inductively coupled plasma reaction device or a capacitively coupled plasma reaction device. The plasma reaction device as described in claim 10, wherein the aspect ratio of the process of the plasma reaction device ranges from 10:1 to 200:1. A method for forming a corrosion-resistant component, comprising: providing a first powder; forming a first ceramic layer using the first powder, the first ceramic layer having first grains; providing a second powder; forming a second ceramic layer on the first ceramic layer using the second powder, the second ceramic layer having second grains, the average size of the second grains being smaller than the average size of the first grains; wherein the average size of the first grains is greater than 10 μm; the average size of the second grains is less than 5 μm; the first ceramic layer and the second ceramic layer both contain rare earth metals. The method for forming a corrosion-resistant component as described in claim 13, wherein the method for forming the first ceramic layer using the first powder includes: using the first powder to form a slurry of the first powder; granulating the slurry containing the first powder to obtain a first particle; shaping the first particle to obtain a first green embryo, wherein the first green embryo is used to prepare the first ceramic layer; the method for forming the second ceramic layer using the second powder includes: using the second powder to form a slurry of the second powder; granulating the slurry containing the second powder to obtain a second particle; covering the surface of the first green embryo with the second particle, shaping the second particle to obtain a second green embryo, wherein the second green embryo is used to prepare the second ceramic layer; and firing an embryo body containing the first green embryo and the second green embryo to obtain the corrosion-resistant component. The method for forming a corrosion-resistant component as described in claim 14, wherein the first green embryo has a first hole structure, the second green embryo is at least located on the inner wall of the first hole structure, and the second green embryo also has a second hole structure; The method for forming the first green embryo and the first hole structure includes: providing a first ejector pin; forming a first green embryo that wraps the first ejector pin around the first ejector pin with the slurry of the first powder, and forming the first hole structure after removing the first ejector pin; the method for forming the second green embryo and the second hole structure includes: providing a second ejector pin, the diameter of the second ejector pin being smaller than the diameter of the first ejector pin; placing the second ejector pin in the first hole structure, filling the gap between the second ejector pin and the first hole structure with the slurry of the second powder to form a second green embryo, and forming the second hole structure after removing the second ejector pin. The method for forming a corrosion-resistant component as described in claim 14, wherein the blank is fired at 1000°C to 2500°C in an atmospheric atmosphere to obtain the corrosion-resistant component. The method for forming a corrosion-resistant component as described in claim 16, wherein, when the embryo is fired, first pores are formed in the first ceramic layer, and second pores are formed in the second ceramic layer, and the size of the first pores is larger than the size of the second pores; the number of the first pores is larger than the number of the second pores. A method for forming a corrosion-resistant component as described in claim 13, wherein a first powder, a binder less than 10% by mass, and a dispersant less than 5% by mass are mixed, and a slurry containing the first powder is obtained after stirring; a second powder, a binder less than 10% by mass, and a dispersant less than 5% by mass are mixed, and a slurry containing the second powder is obtained after stirring. The method for forming a corrosion-resistant component as described in claim 18, wherein the binder is polyvinyl alcohol; and the dispersant is polyethylene glycol.