TWI879021B - Mobile device supporting wideband operation - Google Patents
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本發明係關於一種行動裝置,特別係關於一種可支援寬頻操作之行動裝置。The present invention relates to a mobile device, and more particularly to a mobile device capable of supporting broadband operation.
隨著行動通訊技術的發達,行動裝置在近年日益普遍,常見的例如:手提式電腦、行動電話、多媒體播放器以及其他混合功能的攜帶型電子裝置。為了滿足人們的需求,行動裝置通常具有無線通訊的功能。有些涵蓋長距離的無線通訊範圍,例如:行動電話使用2G、3G、LTE(Long Term Evolution)系統及其所使用700MHz、850 MHz、900MHz、1800MHz、1900MHz、2100MHz、2300MHz以及2500MHz的頻帶進行通訊,而有些則涵蓋短距離的無線通訊範圍,例如:Wi-Fi、Bluetooth系統使用2.4GHz、5.2GHz和5.8GHz的頻帶進行通訊。With the development of mobile communication technology, mobile devices have become increasingly popular in recent years, such as laptops, mobile phones, multimedia players and other hybrid portable electronic devices. In order to meet people's needs, mobile devices usually have wireless communication functions. Some cover long-distance wireless communication ranges, such as mobile phones using 2G, 3G, LTE (Long Term Evolution) systems and the 700MHz, 850 MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz, 2300MHz and 2500MHz frequency bands used for communication, while some cover short-distance wireless communication ranges, such as Wi-Fi, Bluetooth systems use 2.4GHz, 5.2GHz and 5.8GHz frequency bands for communication.
天線(Antenna)為無線通訊領域中不可缺少之元件。倘若用於接收或發射信號之天線其操作頻寬(Operational Bandwidth)過窄,則很容易造成行動裝置之通訊品質下降。因此,如何設計出一種小尺寸、寬頻帶之天線結構,對設計者而言是一項重要課題。Antennas are essential components in the field of wireless communications. If the operational bandwidth of an antenna used to receive or transmit signals is too narrow, it will easily cause the communication quality of mobile devices to deteriorate. Therefore, how to design a small-sized, wide-bandwidth antenna structure is an important issue for designers.
在較佳實施例中,本發明提出一種支援寬頻操作之行動裝置,包括:一接地元件;一饋入輻射部,具有一饋入點;一第一輻射部,鄰近於該饋入輻射部;一第一切換電路,根據一第一控制電位來選擇性地將該第一輻射部耦接至該接地元件上之一第一接地點;一第二輻射部,鄰近於該饋入輻射部;以及一第二切換電路,根據一第二控制電位來選擇性地將該第二輻射部耦接至該接地元件上之一第二接地點;其中該接地元件、該饋入輻射部、該第一輻射部、該第一切換電路、該第二輻射部,以及該第二切換電路係共同形成一天線結構。In a preferred embodiment, the present invention provides a mobile device supporting broadband operation, comprising: a grounding element; a feed radiation portion having a feed point; a first radiation portion adjacent to the feed radiation portion; a first switching circuit selectively coupling the first radiation portion to a first grounding point on the grounding element according to a first control potential; a second radiation portion adjacent to the feed radiation portion; and a second switching circuit selectively coupling the second radiation portion to a second grounding point on the grounding element according to a second control potential; wherein the grounding element, the feed radiation portion, the first radiation portion, the first switching circuit, the second radiation portion, and the second switching circuit together form an antenna structure.
在一些實施例中,該天線結構係操作於一第一低頻模式、一第二低頻模式,或是一高頻模式三者擇一,而該天線結構於該第一低頻模式和該第二低頻模式下能提供不同之輻射場型。In some embodiments, the antenna structure operates in one of a first low-frequency mode, a second low-frequency mode, or a high-frequency mode, and the antenna structure can provide different radiation patterns in the first low-frequency mode and the second low-frequency mode.
在一些實施例中,該饋入輻射部、該第一輻射部,以及該第二輻射部係各自呈現一T字形,而該第二輻射部係與該第一輻射部大致互相對稱。In some embodiments, the feed radiation portion, the first radiation portion, and the second radiation portion each present a T-shape, and the second radiation portion is substantially symmetrical to the first radiation portion.
在一些實施例中,該天線結構涵蓋一第一頻帶、一第二頻帶,以及一第三頻帶,該第一頻帶係介於2400MHz至2500MHz之間,該第二頻帶係介於5150MHz至5850MHz之間,而該第三頻帶係介於5925MHz至7125MHz之間。In some embodiments, the antenna structure covers a first frequency band, a second frequency band, and a third frequency band, the first frequency band is between 2400 MHz and 2500 MHz, the second frequency band is between 5150 MHz and 5850 MHz, and the third frequency band is between 5925 MHz and 7125 MHz.
在一些實施例中,該饋入輻射部包括一第一區段、一第二區段,以及一第三區段,其中該第二區段和該第三區段皆經由該第一區段耦接至該饋入點。In some embodiments, the feed radiation portion includes a first segment, a second segment, and a third segment, wherein the second segment and the third segment are both coupled to the feed point via the first segment.
在一些實施例中,該第一區段和該第二區段之總長度係大致等於該第三頻帶之0.25倍波長。In some embodiments, the total length of the first segment and the second segment is approximately equal to 0.25 times the wavelength of the third frequency band.
在一些實施例中,該第一輻射部包括一第四區段、一第五區段,以及一第六區段,其中該第五區段和該第六區段皆經由該第四區段耦接至該第一切換電路。In some embodiments, the first radiation portion includes a fourth segment, a fifth segment, and a sixth segment, wherein the fifth segment and the sixth segment are both coupled to the first switching circuit via the fourth segment.
在一些實施例中,該第四區段和該第六區段之總長度係大致等於該第一頻帶之0.25倍波長,而該第五區段和該第六區段之總長度係大致等於該第二頻帶之0.5倍波長。In some embodiments, the total length of the fourth segment and the sixth segment is approximately equal to 0.25 times the wavelength of the first frequency band, and the total length of the fifth segment and the sixth segment is approximately equal to 0.5 times the wavelength of the second frequency band.
在一些實施例中,該第一切換電路包括:一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至該第一輻射部上之一第一連接點,而該第一二極體之該陰極係耦接至該第一接地點;以及一第一電感器,具有一第一端和一第二端,其中該第一電感器之該第一端係耦接至該第一連接點,而該第一電感器之該第二端係用於接收該第一控制電位。In some embodiments, the first switching circuit includes: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to a first connection point on the first radiation portion, and the cathode of the first diode is coupled to the first ground point; and a first inductor having a first end and a second end, wherein the first end of the first inductor is coupled to the first connection point, and the second end of the first inductor is used to receive the first control potential.
在一些實施例中,該第二切換電路包括:一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至該第二輻射部上之一第二連接點,而該第二二極體之該陰極係耦接至該第二接地點;以及一第二電感器,具有一第一端和一第二端,其中該第二電感器之該第一端係耦接至該第二連接點,而該第二電感器之該第二端係用於接收該第二控制電位。In some embodiments, the second switching circuit includes: a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to a second connection point on the second radiation portion, and the cathode of the second diode is coupled to the second ground point; and a second inductor having a first end and a second end, wherein the first end of the second inductor is coupled to the second connection point, and the second end of the second inductor is used to receive the second control potential.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.
以下的揭露內容提供許多不同的實施例或範例以實施本案的不同特徵。以下的揭露內容敘述各個構件及其排列方式的特定範例,以簡化說明。當然,這些特定的範例並非用以限定。例如,若是本揭露書敘述了一第一特徵形成於一第二特徵之上或上方,即表示其可能包含上述第一特徵與上述第二特徵是直接接觸的實施例,亦可能包含了有附加特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與第二特徵可能未直接接觸的實施例。另外,以下揭露書不同範例可能重複使用相同的參考符號及/或標記。這些重複係為了簡化與清晰的目的,並非用以限定所討論的不同實施例及/或結構之間有特定的關係。The following disclosure provides many different embodiments or examples for implementing different features of the present invention. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the present disclosure describes a first feature formed on or above a second feature, it means that it may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. In addition, the same reference symbols and/or marks may be reused in different examples of the following disclosure. These repetitions are for the purpose of simplification and clarity, and are not intended to limit the specific relationship between the different embodiments and/or structures discussed.
此外,其與空間相關用詞。例如「在…下方」、「下方」、「較低的」、「上方」、「較高的」 及類似的用詞,係為了便於描述圖示中一個元件或特徵與另一個(些)元件或特徵之間的關係。除了在圖式中繪示的方位外,這些空間相關用詞意欲包含使用中或操作中的裝置之不同方位。裝置可能被轉向不同方位(旋轉90度或其他方位),則在此使用的空間相關詞也可依此相同解釋。In addition, spatially related terms such as "below," "below," "lower," "above," "higher," and similar terms are used to facilitate description of the relationship between one element or feature and another element or features in the diagram. In addition to the orientation shown in the drawings, these spatially related terms are intended to include different orientations of the device in use or operation. The device may be rotated to different orientations (rotated 90 degrees or other orientations), and the spatially related terms used herein may be interpreted accordingly.
第1圖係顯示根據本發明一實施例所述之行動裝置100之示意圖。例如,行動裝置100可以是一智慧型手機(Smart Phone)、一平板電腦(Tablet Computer),或是一筆記型電腦(Notebook Computer)。在第1圖之實施例中,行動裝置100包括:一接地元件(Ground Element)110、一饋入輻射部(Feeding Radiation Element)120、一第一輻射部(Radiation Element)130、一第一切換電路(Switch Circuit)140、一第二輻射部150,以及一第二切換電路160,其中接地元件110、饋入輻射部120、第一輻射部130,以及第二輻射部150皆可用金屬材質所製成,例如:銅、銀、鋁、鐵,或是其合金。必須理解的是,雖然未顯示於第1圖中,但行動裝置100更可包括其他元件,例如:一處理器(Processor)、一觸控面板(Touch Control Panel)、一揚聲器(Speaker)、一供電模組(Power Supply Module),或(且)一外殼(Housing)。FIG. 1 is a schematic diagram showing a
接地元件110可藉由一接地銅箔(Ground Copper Foil)來實施,其可用於提供一接地電位(Ground Voltage)VSS。例如,接地元件110可視為行動裝置100之一系統接地面(System Ground Plane),但亦不僅限於此。The
饋入輻射部120可以大致呈現一T字形。詳細而言,饋入輻射部120具有一第一端121、一第二端122,以及一第三端123,其中一饋入點(Feeding Point)FP係位於饋入輻射部120之第一端121處,而饋入輻射部120之第二端122和第三端123可各自為一開路端(Open End)。饋入點FP更可耦接至一信號源(Signal Source)190。例如,信號源190可為一射頻(Radio Frequency,RF)模組。在一些實施例中,饋入輻射部120包括鄰近於第一端121之一第一區段(Segment)124、鄰近於第二端122之一第二區段125,以及鄰近於第三端123之一第三區段126,其中第二區段125和第三區段126皆可經由第一區段124耦接至饋入點FP。必須注意的是,本說明書中所謂「鄰近」或「相鄰」一詞可指對應之二元件間距小於一既定距離(例如:10mm或更短),亦可包括對應之二元件彼此直接接觸之情況(亦即,前述間距縮短至0)。The
第一輻射部130可以大致呈現另一T字形。詳細而言,第一輻射部130具有一第一端131、一第二端132,以及一第三端133,其中一第一連接點(Connection Point)CP1係位於第一輻射部130之第一端131處,而第一輻射部130之第二端132和第三端133可各自為一開路端。第一連接點CP1更可耦接至第一切換電路140。在一些實施例中,第一輻射部130包括鄰近於第一端131之一第四區段134、鄰近於第二端132之一第五區段135,以及鄰近於第三端133之一第六區段136,其中第五區段135和第六區段136皆可經由第四區段134耦接至第一連接點CP1和第一切換電路140。在一些實施例中,第一輻射部130係鄰近於饋入輻射部120,使得第六區段136和第二區段125之間可形成一第一耦合間隙(Coupling Gap)GC1。The first radiating
第一切換電路140之內部電路結構於本發明中並不特別作限制。大致來說,第一切換電路140可根據一第一控制電位VC1來選擇性地將第一輻射部130之第一連接點CP1耦接至接地元件110上之一第一接地點(Ground Point)GP1。例如,若第一控制電位VC1為高邏輯位準(亦即,邏輯「1」),則第一切換電路140可將第一連接點CP1耦接至第一接地點GP1(亦即,第一切換電路140可近似於一短路路徑);反之,若第一控制電位VC1為低邏輯位準(亦即,邏輯「0」),則第一切換電路140不會將第一連接點CP1耦接至第一接地點GP1(亦即,第一切換電路140可近似於一斷路路徑)。The internal circuit structure of the
第二輻射部150可以大致呈現又一T字形,其中第二輻射部150可與第二輻射部130大致互相對稱。詳細而言,第二輻射部150具有一第一端151、一第二端152,以及一第三端153,其中一第二連接點CP2係位於第二輻射部150之第一端151處,而第二輻射部150之第二端152和第三端153可各自為一開路端。第二連接點CP2更可耦接至第二切換電路160。在一些實施例中,第二輻射部150包括鄰近於第一端151之一第七區段154、鄰近於第二端152之一第八區段155,以及鄰近於第三端153之一第九區段156,其中第八區段155和第九區段156皆可經由第七區段154耦接至第二連接點CP2和第二切換電路160。在一些實施例中,第二輻射部150係鄰近於饋入輻射部120,使得第九區段156和第三區段126之間可形成一第二耦合間隙GC2。The
第二切換電路160之內部電路結構於本發明中並不特別作限制。大致來說,第二切換電路160可根據一第二控制電位VC2來選擇性地將第二輻射部150之第二連接點CP2耦接至接地元件110上之一第二接地點GP2,其中第二接地點GP2可異於前述之第一接地點GP1。例如,若第二控制電位VC2為高邏輯位準,則第二切換電路160可將第二連接點CP2耦接至第二接地點GP2(亦即,第二切換電路160可近似於一短路路徑);反之,若第二控制電位VC2為低邏輯位準,則第二切換電路160不會將第二連接點CP2耦接至第二接地點GP2 (亦即,第二切換電路160可近似於一斷路路徑)。The internal circuit structure of the
在較佳實施例中,接地元件110、饋入輻射部120、第一輻射部130、第一切換電路140、第二輻射部150,以及第二切換電路160可共同形成行動裝置100之一天線結構(Antenna Structure)。行動裝置100之天線結構可設置於一介質基板(Dielectric Substrate)上(未顯示)。例如,前述之介質基板可為一FR4(Flame Retardant 4)基板、一印刷電路板(Printed Circuit Board,PCB),或是一軟性電路板(Flexible Printed Circuit,FPC),但亦不僅限於此。在本發明之設計下,行動裝置100之天線結構將能提供一可變操作頻率(Variable Operational Frequency)和一可調輻射場型(Tunable Radiation Pattern),以適應於各種不同之使用環境。In a preferred embodiment, the
以下實施例將介紹行動裝置100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之第一切換電路140之電路圖。在第2圖之實施例中,第一切換電路140包括一第一二極體(Diode)D1和一第一電感器(Inductor)LA。例如,第一二極體D1可為一正本負二極體(PIN Diode),但亦不僅限於此。第一二極體D1具有一陽極(Anode)和一陰極(Cathode),其中第一二極體D1之陽極係耦接至第一連接點CP1,而第一二極體D1之陰極係耦接至第一接地點GP1。第一電感器LA具有一第一端和一第二端,其中第一電感器LA之第一端係耦接至第一連接點CP1,而第一電感器LA之第二端係用於接收第一控制電位VC1。若第一控制電位VC1為高邏輯位準,則第一二極體D1將會導通,而若第一控制電位VC1為低邏輯位準,則第一二極體D1將會關閉。另外,第一電感器LA還可用於濾除關於第一控制電位VC1之高頻雜訊(High-Frequency Noise)。FIG. 2 is a circuit diagram of a
第3圖係顯示根據本發明一實施例所述之第二切換電路160之電路圖。在第3圖之實施例中,第二切換電路160包括一第二二極體D2和一第二電感器LB。例如,第二二極體D2可為另一正本負二極體,但亦不僅限於此。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二連接點CP2,而第二二極體D2之陰極係耦接至第二接地點GP2。第二電感器LB具有一第一端和一第二端,其中第二電感器LB之第一端係耦接至第二連接點CP2,而第二電感器LB之第二端係用於接收第二控制電位VC2。若第二控制電位VC2為高邏輯位準,則第二二極體D2將會導通,而若第二控制電位VC2為低邏輯位準,則第二二極體D2將會關閉。另外,第二電感器LB還可用於濾除關於第二控制電位VC2之高頻雜訊。FIG. 3 is a circuit diagram showing a
在一些實施例中,第一控制電位VC1和第二控制電位VC2可由一控制器(Controller)(未顯示)根據一使用者輸入或一處理器命令而產生。回應於第一控制電位VC1和第二控制電位VC2之不同位準,行動裝置100之天線結構將可操作於一第一低頻模式、一第二低頻模式,或是一高頻模式三者擇一。舉例而言,前述之操作模式和控制電位之間之關係可如下表一所述:
第4圖係顯示根據本發明一實施例所述之行動裝置100之天線結構於第一低頻模式下之返回損失(Return Loss)圖,其中橫軸代表操作頻率(MHz),而縱軸代表返回損失(dB)。根據第4圖之量測結果,當第一控制電位VC1為低邏輯位準且第二控制電位VC2為高邏輯位準時,行動裝置100之天線結構將可涵蓋一第一頻帶(Frequency Band)FB1和一第二頻帶FB2。例如,第一頻帶FB1可介於2400MHz至2500MHz之間,而第二頻帶FB2可介於5150MHz至5850MHz之間。FIG. 4 shows a return loss diagram of the antenna structure of the
第5圖係顯示根據本發明一實施例所述之行動裝置100之天線結構於第二低頻模式下之返回損失圖,其中橫軸代表操作頻率(MHz),而縱軸代表返回損失(dB)。根據第5圖之量測結果,當第一控制電位VC1為高邏輯位準且第二控制電位VC2為低邏輯位準時,行動裝置100之天線結構亦可涵蓋前述之第一頻帶FB1和一第二頻帶FB2。必須注意的是,行動裝置100之天線結構於第一低頻模式和該第二低頻模式下將能提供不同之輻射場型。FIG. 5 is a graph showing the return loss of the antenna structure of the
第6圖係顯示根據本發明一實施例所述之行動裝置100之天線結構於高頻模式下之返回損失圖,其中橫軸代表操作頻率(MHz),而縱軸代表返回損失(dB)。根據第6圖之量測結果,當第一控制電位VC1和第二控制電位VC2兩者皆為低邏輯位準時,行動裝置100之天線結構將可涵蓋一第三頻帶FB3。例如,第三頻帶FB3可介於5925MHz至7125MHz之間。因此,藉由適當地調整第一控制電位VC1和第二控制電位VC2,行動裝置100將至少可支援傳統WLAN(Wireless Local Area Network)和新世代Wi-Fi 6E之寬頻操作。FIG6 is a graph showing the return loss of the antenna structure of the
第7圖係顯示根據本發明一實施例所述之行動裝置100之天線結構於第一低頻模式下之輻射場型圖,其可沿著XY平面進行量測。根據第7圖之量測結果,當第一控制電位VC1為低邏輯位準且第二控制電位VC2為高邏輯位準時,行動裝置100之天線結構可操作於第一低頻模式,而其於第一頻帶FB1中之最大輻射方向將朝向-X軸。FIG. 7 shows a radiation pattern of the antenna structure of the
第8圖係顯示根據本發明一實施例所述之行動裝置100之天線結構於第二低頻模式下之輻射場型圖,其可沿著XY平面進行量測。根據第8圖之量測結果,當第一控制電位VC1為高邏輯位準且第二控制電位VC2為低邏輯位準時,行動裝置100之天線結構可操作於第二低頻模式,而其於第一頻帶FB1中之最大輻射方向將朝向+X軸。在此設計下,行動裝置100之天線結構將能輕易地接收或傳送各種不同方向上之電磁波。FIG. 8 shows the radiation pattern of the antenna structure of the
在一些實施例中,行動裝置100之元件尺寸和元件參數可如下列所述。在饋入輻射部120中,第一區段124和第二區段125之總長度L1可大致等於行動裝置100之天線結構之第三頻帶FB3之0.25倍波長(λ/4),而第一區段124和第三區段126之總長度L4亦可大致等於行動裝置100之天線結構之第三頻帶FB3之0.25倍波長(λ/4)。在第一輻射部130中,第四區段134和第六區段136之總長度L2可大致等於行動裝置100之天線結構之第一頻帶FB1之0.25倍波長(λ/4),而第五區段135和第六區段136之總長度L3可大致等於行動裝置100之天線結構之第二頻帶FB2之0.5倍波長(λ/2)。第一耦合間隙GC1之寬度可介於1mm至1.5mm之間。在第二輻射部150中,第七區段154和第九區段156之總長度L5可大致等於行動裝置100之天線結構之第一頻帶FB1之0.25倍波長(λ/4),而第八區段155和第九區段156之總長度L6可大致等於行動裝置100之天線結構之第二頻帶FB2之0.5倍波長(λ/2)。第二耦合間隙GC2之寬度可介於1mm至1.5mm之間。第一輻射部130和第二輻射部150之最短間距DS可介於1mm至2mm之間。第一電感器LA之電感值(Inductance)可以大於或等於8.2nH。第二電感器LB之電感值亦可大於或等於8.2nH。以上元件尺寸和元件參數之範圍係根據多次實驗結果而得出,其有助於最佳化行動裝置100之天線結構之操作頻寬(Operational Bandwidth)和阻抗匹配(Impedance Matching)。In some embodiments, the component sizes and component parameters of the
本發明提出一種新穎之行動裝置及其天線結構。與傳統設計相比,本發明至少具有可變操作頻率、可調輻射場型,以及低製造成本等優勢,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel mobile device and antenna structure thereof. Compared with the traditional design, the present invention has at least the advantages of variable operating frequency, adjustable radiation pattern, and low manufacturing cost, so it is very suitable for application in various types of devices.
值得注意的是,以上所述之元件尺寸、元件形狀、元件參數,以及頻率範圍皆非為本發明之限制條件。天線設計者可以根據不同需要調整這些設定值。本發明之行動裝置並不僅限於第1-8圖所圖示之狀態。本發明可以僅包括第1-8圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之行動裝置當中。It is worth noting that the above-mentioned component size, component shape, component parameters, and frequency range are not limiting conditions of the present invention. Antenna designers can adjust these settings according to different needs. The mobile device of the present invention is not limited to the states shown in Figures 1-8. The present invention may include only one or more features of any one or more embodiments of Figures 1-8. In other words, not all the features shown in the diagrams need to be implemented in the mobile device of the present invention at the same time.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.
100:行動裝置 110:接地元件 120:饋入輻射部 121:饋入輻射部之第一端 122:饋入輻射部之第二端 123:饋入輻射部之第三端 124:第一區段 125:第二區段 126:第三區段 130:第一輻射部 131:第一輻射部之第一端 132:第一輻射部之第二端 133:第一輻射部之第三端 134:第四區段 135:第五區段 136:第六區段 140:第一切換電路 150:第二輻射部 151:第二輻射部之第一端 152:第二輻射部之第二端 153:第二輻射部之第三端 154:第七區段 155:第八區段 156:第九區段 160:第二切換電路 190:信號源 CP1:第一連接點 CP2:第二連接點 D1:第一二極體 D2:第二二極體 DS:間距 FB1:第一頻帶 FB2:第二頻帶 FB3:第三頻帶 FP:饋入點 GC1:第一耦合間隙 GC2:第二耦合間隙 GP1:第一接地點 GP2:第二接地點 L1,L2,L3,L4,L5,L6:長度 LA:第一電感器 LB:第二電感器 VC1:第一控制電位 VC2:第二控制電位 VSS:接地電位 X:X軸 Y:Y軸 Z:Z軸 100: mobile device 110: grounding element 120: feeding radiation part 121: first end of feeding radiation part 122: second end of feeding radiation part 123: third end of feeding radiation part 124: first section 125: second section 126: third section 130: first radiation part 131: first end of first radiation part 132: second end of first radiation part 133: third end of first radiation part 134: fourth section 135: fifth section 136: sixth section 140: first switching circuit 150: second radiation part 151: first end of second radiation part 152: Second end of the second radiation part 153: Third end of the second radiation part 154: Seventh segment 155: Eighth segment 156: Ninth segment 160: Second switching circuit 190: Signal source CP1: First connection point CP2: Second connection point D1: First diode D2: Second diode DS: Spacing FB1: First frequency band FB2: Second frequency band FB3: Third frequency band FP: Feed point GC1: First coupling gap GC2: Second coupling gap GP1: First ground point GP2: Second ground point L1, L2, L3, L4, L5, L6: Length LA: First inductor LB: Second inductor VC1: First control potential VC2: Second control potential VSS: Ground potential X: X axis Y: Y axis Z: Z axis
第1圖係顯示根據本發明一實施例所述之行動裝置之示意圖。 第2圖係顯示根據本發明一實施例所述之第一切換電路之電路圖。 第3圖係顯示根據本發明一實施例所述之第二切換電路之電路圖。 第4圖係顯示根據本發明一實施例所述之行動裝置之天線結構於第一低頻模式下之返回損失圖。 第5圖係顯示根據本發明一實施例所述之行動裝置之天線結構於第二低頻模式下之返回損失圖。 第6圖係顯示根據本發明一實施例所述之行動裝置之天線結構於高頻模式下之返回損失圖。 第7圖係顯示根據本發明一實施例所述之行動裝置之天線結構於第一低頻模式下之輻射場型圖。 第8圖係顯示根據本發明一實施例所述之行動裝置之天線結構於第二低頻模式下之輻射場型圖。 FIG. 1 is a schematic diagram showing a mobile device according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a first switching circuit according to an embodiment of the present invention. FIG. 3 is a circuit diagram showing a second switching circuit according to an embodiment of the present invention. FIG. 4 is a return loss diagram showing an antenna structure of a mobile device according to an embodiment of the present invention in a first low-frequency mode. FIG. 5 is a return loss diagram showing an antenna structure of a mobile device according to an embodiment of the present invention in a second low-frequency mode. FIG. 6 is a return loss diagram showing an antenna structure of a mobile device according to an embodiment of the present invention in a high-frequency mode. FIG. 7 shows the radiation pattern of the antenna structure of the mobile device according to an embodiment of the present invention in the first low-frequency mode. FIG. 8 shows the radiation pattern of the antenna structure of the mobile device according to an embodiment of the present invention in the second low-frequency mode.
100:行動裝置 100: Mobile devices
110:接地元件 110: Grounding element
120:饋入輻射部 120: Feed Radiation Department
121:饋入輻射部之第一端 121: Feeding the first end of the radiation unit
122:饋入輻射部之第二端 122: Feed the second end of the radiation unit
123:饋入輻射部之第三端 123: The third end of the feed radiation unit
124:第一區段 124: Section 1
125:第二區段 125: Second section
126:第三區段 126: The third section
130:第一輻射部 130: First Radiation Division
131:第一輻射部之第一端 131: The first end of the first radiation section
132:第一輻射部之第二端 132: The second end of the first radiation section
133:第一輻射部之第三端 133: The third end of the first radiation section
134:第四區段 134: Section 4
135:第五區段
135:
136:第六區段 136: Section 6
140:第一切換電路 140: First switching circuit
150:第二輻射部 150: Second Radiation Division
151:第二輻射部之第一端 151: The first end of the second radiation section
152:第二輻射部之第二端 152: The second end of the second radiation section
153:第二輻射部之第三端 153: The third end of the second radiation section
154:第七區段 154: Section 7
155:第八區段 155: Section 8
156:第九區段 156: Section 9
160:第二切換電路 160: Second switching circuit
190:信號源 190:Signal source
CP1:第一連接點 CP1: First connection point
CP2:第二連接點 CP2: Second connection point
DS:間距 DS: Spacing
FP:饋入點 FP: Feed Point
GC1:第一耦合間隙 GC1: First coupling gap
GC2:第二耦合間隙 GC2: Second coupling gap
GP1:第一接地點 GP1: First grounding point
GP2:第二接地點 GP2: Second grounding point
L1,L2,L3,L4,L5,L6:長度 L1,L2,L3,L4,L5,L6: Length
VC1:第一控制電位 VC1: first control potential
VC2:第二控制電位 VC2: Second control potential
VSS:接地電位 VSS: ground potential
X:X軸 X: X axis
Y:Y軸 Y:Y axis
Z:Z軸 Z:Z axis
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