TWI877522B - Plasma electrolytic polishing equipment - Google Patents

Abstract

The present invention is a plasma electrolytic polishing device, which electrolytically polishes a workpiece. The plasma electrolytic polishing device comprises a feeding assembly, a conductive trough, a power source and a monitoring assembly. One end of the feeding assembly is used to place the workpiece, the conductive trough is correspondingly arranged below one end of the feeding assembly, an inner side of the conductive trough is used to place a polishing liquid, and the monitoring assembly is electrically connected to the feeding assembly. The monitoring assembly transmits a control signal to the feeding assembly according to a current value, and the feeding assembly drives the workpiece to immerse in the polishing liquid, so that the workpiece, the polishing liquid, the conductive trough and the power source form a loop.

Description

Plasma electrolytic polishing equipment

The present invention relates to a device, in particular a plasma electrolytic polishing device capable of adjusting the workpiece feed rate according to the polishing conditions.

Plasma electrolytic polishing technology is a comprehensive polishing method that effectively overcomes the challenges of difficult-to-process metal products. Plasma electrolytic polishing technology uses high-voltage electric fields and polishing fluids to form an air film on the surface of the workpiece and an electric field with a high voltage difference at the interface, thereby generating a plasma energy bombardment effect in the air film, removing the electrolytic oxide film on the surface of the workpiece to achieve a surface polishing effect. The plasma electrolytic polishing method has a characteristic that the current required for polishing is proportional to the area of the workpiece to be polished.

It is known that during the operation of plasma electrolytic polishing technology, the workpiece is often immersed in the polishing liquid too quickly, causing the current to fluctuate violently and rise too quickly before the workpiece surface reaches a stable air film formation state, causing power overload and process failure. The only way to deal with this problem is to slowly immerse the workpiece into the polishing liquid based on experience in order to achieve stable polishing operation. This method lacks the ability to grasp and monitor the mechanism of process changes, so the operator cannot effectively optimize the workpiece immersion speed conditions. For example, in different polishing batches, the conductivity of the polishing liquid changes, which slightly changes the immersion speed. It can only be implemented at a fixed slow speed for stability, and the polishing effect can only be checked after the entire polishing process is implemented, resulting in inconsistent process quality, unable to improve productivity, and a large amount of manual pre-trial and error operation experience accumulation before polishing different materials, which is time-consuming and labor-intensive. Therefore, the relevant industry is in great need of a plasma electrolytic polishing method and device that can adjust the workpiece feed rate accordingly.

Therefore, how to make a plasma electrolytic polishing device that can adjust the feed rate of electrolytic polishing of workpieces in response to changes in current value is a problem that technicians in this field want to solve.

One purpose of the present invention is to provide a plasma electrolytic polishing device, which uses a feeding assembly to move the workpiece to be processed, and obtains the current value of the circuit of the workpiece, polishing liquid and power supply through a monitoring assembly, and then adjusts the moving speed of the feeding assembly according to the change of the current value, so as to prevent the workpiece from moving too fast or too slow during polishing, causing the plasma electrolytic polishing process to fail.

In view of the above-mentioned purpose, the present invention provides a plasma electrolytic polishing device, which electrolytically polishes a workpiece. The plasma electrolytic polishing device includes a feeding assembly, a conductive tank, a power source and a monitoring assembly. The monitoring assembly transmits a control signal to the feeding assembly according to a current value. The feeding assembly drives the workpiece to be immersed in a polishing liquid in the conductive tank, so that the workpiece, the polishing liquid, the conductive tank and the power source form a loop.

The present invention provides an embodiment, wherein the feed assembly includes a motor, a feed shaft and a clamping portion, the feed shaft is pivotally connected to the motor, the other end of the feed shaft is provided with the clamping portion, and the clamping portion clamps the workpiece.

The present invention provides an embodiment, wherein a voltage value of the power source is greater than 260V.

The present invention provides an embodiment, wherein the polishing liquid is an ammonium sulfate polishing liquid.

The present invention provides an embodiment, wherein the monitoring component further includes a monitoring logic calculation module and an axis drive signal generating element, the monitoring logic calculation module is electrically connected to the induction sensing element and the axis drive signal generating element, and the axis drive signal generating element is electrically connected to the feed component.

The present invention provides an embodiment, wherein the inductive sensing element is a current transformer or a Hall sensing element.

The present invention provides an embodiment, wherein the shaft drive signal generating element is a pulse signal element or a voltage analog signal element.

The present invention provides an embodiment, wherein the current flow measurement range of the current flow sensing element is between 0.01A and 100A.

The present invention provides an embodiment, wherein the signal sampling rate of the inductive sensing element is between 1S/sec and 400kS/sec, where S represents the number of samples and sec represents seconds.

10: Workpiece

12: Air film

20: Feeding assembly

22: Motor

24: Feed shaft

26: Clamping part

30: Conductive trough

32: Polishing liquid

40: Power supply

42: Anode

44:Cathode

50: Monitoring components

52: Control signal

54: Inductive flow measuring element

541: Current value

53: Monitoring logic calculation module

55: Shaft drive signal generating element

60: Loop

70: Default current value range

72: Maximum preset current value

74: Minimum preset current value

ICF: Current Characteristics

S10, S20, S30, S40: Steps

Figure 1A: It is a schematic diagram of a plasma electrolytic polishing device of one embodiment of the present invention; Figure 1B: It is a schematic diagram of a plasma electrolytic polishing device of one embodiment of the present invention; Figure 1C: It is a schematic diagram of a plasma electrolytic polishing device of one embodiment of the present invention; Figure 2A: It is a schematic diagram of the operation of the plasma electrolytic polishing device of one embodiment of the present invention; Figure 2B: It is a schematic diagram of the operation of the plasma electrolytic polishing device of one embodiment of the present invention; Figure 3: It is a schematic diagram of the use process of the plasma electrolytic polishing device of one embodiment of the present invention; and Figure 4: A schematic diagram of the current and time of one embodiment of the plasma electrolytic polishing of the present invention.

In order to enable the review committee to have a deeper understanding and recognition of the characteristics and effects of the present invention, we would like to provide a better embodiment and a detailed description as follows: It is known that during the operation of plasma electrolytic polishing technology, the workpiece is often immersed in the polishing liquid too quickly, causing the current to fluctuate violently and rise too quickly before the workpiece surface reaches a stable air film formation state, causing power overload and process failure. The only way to deal with it is to slowly immerse the workpiece into the polishing liquid based on experience in order to achieve stable polishing operation. It lacks the ability to grasp and monitor the mechanism of process changes, so the operator cannot effectively optimize the workpiece immersion speed conditions.

The present invention improves the traditional plasma electrolytic polishing technology. The workpiece to be processed is moved by the feeding assembly, and the current value of the circuit of the workpiece, polishing liquid and power supply is obtained by the monitoring assembly. The moving speed of the feeding assembly is adjusted according to the change of the current value to prevent the workpiece from moving too fast or too slow during polishing, which will cause the plasma electrolytic polishing process to fail.

In the following, the present invention will be described in detail by illustrating various embodiments of the present invention with reference to drawings. However, the concept of the present invention may be embodied in many different forms and should not be construed as being limited to the exemplary embodiments described herein.

First, please refer to Figure 1A, which is a schematic diagram of a plasma electrolytic polishing device of an embodiment of the present invention. As shown in the figure, the plasma electrolytic polishing device of this embodiment is used to electrolytically polish a workpiece 10, wherein the plasma electrolytic polishing device of this embodiment includes a feeding assembly 20, a conductive tank 30, a power supply 40 and a monitoring assembly 50.

In this embodiment, please refer to FIG. 1B, which is a schematic diagram of a plasma electrolytic polishing device of an embodiment of the present invention. As shown in the figure, one end of the feed assembly 20 is used to set the workpiece 10, and the conductive groove body 30 is correspondingly set below one of the feed assembly 20. One inner side of the conductive groove body 30 is used to set a polishing liquid 32, and the polishing liquid 32 is an ammonium sulfate polishing liquid.

The feed assembly 20 includes a motor 22, a feed shaft 24 and a clamping portion 26. The feed shaft 24 is pivotally connected to the motor 22. The other end of the feed shaft 24 is provided with the clamping portion 26, and the clamping portion 26 clamps the workpiece 10.

The power source 40 includes an anode electrode 42 and a cathode electrode 44. The anode electrode 42 is electrically connected to the workpiece 10. The cathode electrode 44 is electrically connected to the conductive slot 30. The monitoring component 50 is electrically connected to the feed component 20. The monitoring component 50 includes an inductive sensing element 54. The monitoring component 50 is electrically connected to the feed component 20 and the power source 40.

Please refer to FIG. 1C, which is a schematic diagram of a plasma electrolytic polishing device of an embodiment of the present invention. As shown in the figure, the monitoring component 50 further includes a monitoring logic calculation module 53 and an axis drive signal generating element 55. The monitoring logic calculation module 53 is electrically connected to the induction sensing element 54 and the axis drive signal generating element 55. The axis drive signal generating element 55 is electrically connected to the feed component 20.

In this embodiment, the inductive sensing element 54 is a current transformer or a Hall sensing element, and the shaft drive signal generating element 55 is a pulse signal element or a voltage analog signal element.

The monitoring component 50 of the slurry electrolytic polishing device of this embodiment transmits a control signal 52 to the feeding component 20 according to a current value 541. The feeding component 20 drives the workpiece 10 to immerse into the polishing liquid 32, so that the workpiece 10, the polishing liquid 32, the conductive tank 30 and the power source 40 form a loop 60.

Next, please refer to Figure 3, which is a schematic diagram of the use process of the plasma electrolytic polishing device of one embodiment of the present invention. As shown in the figure, the operation steps of this embodiment are as follows: Step S10: electrically connect the positive electrode of the power source to the workpiece, and electrically connect the negative electrode of the power source to the polishing liquid; Step S20: drive the workpiece to move toward the electrolyte at a first rate, so that the workpiece contacts the polishing liquid and performs electrolysis; Step S30: continue to drive the workpiece at the first rate, so that the area of the workpiece contacting the polishing liquid increases, and obtain the current value of the circuit of the workpiece, the polishing liquid and the power source; Step S40: when the current value is greater than or less than the preset current value range, move the workpiece at a second rate, wherein the second rate is different from the first rate.

Among them, the step described in step S10 in this embodiment is to electrically connect the anode electrode 42 of the power source 40 to the workpiece 10, and to electrically connect the cathode electrode 44 of the power source 40 to the polishing liquid 32.

Next, in step S20 of this embodiment, the feed assembly 20 drives the workpiece 10 to move toward the polishing liquid 32 at a first rate, so that the surface of the workpiece 10 contacts the polishing liquid 32. At this time, the workpiece 10, the polishing liquid 32 and the power source 40 form a loop 60.

Therefore, when the surface of the workpiece 10 contacts the polishing liquid 32, the high voltage applied by the power source 40 causes the surface of the workpiece 10 and the polishing liquid 32 to undergo an oxidation-reduction reaction, forming an oxide film on the surface of the workpiece 10. At this time, the short circuit is caused, and the polishing liquid 32 that the surface of the workpiece 10 contacts boils due to the high voltage at the interface, and forms an air film 12 to surround the surface of the workpiece 10. The air film 12 further isolates the workpiece 10 from the polishing liquid 32. The high voltage electric field forms plasma energy in the air film 12, so the plasma energy further removes the oxide film on the surface of the workpiece 10, so that the surface of the workpiece 10 achieves a polishing effect.

In this embodiment, please refer to FIG. 1C again. When the loop 60 is formed, the monitoring component 50 captures the current value 541 in the loop 60 through the inductive sensing element 54, and further calculates the feed speed of the workpiece 10 corresponding to the current value 541 through the monitoring logic calculation module 53. The result is transmitted to the shaft drive signal generating element 55, so that the shaft drive signal generating element 55 generates the control signal 52 through the calculation result, and transmits the control signal 52 to the motor 22 of the feed assembly 20. Finally, the motor 22 adjusts the rotation speed accordingly, so that the speed at which the feed shaft 24 moves the clamping part 26 and the workpiece 10 changes.

In order to polish the entire workpiece 10, the feed assembly 20 continues to drive the workpiece 10 toward the polishing liquid 32 at the first rate as described in step S30 of this embodiment, so that an area (not shown) of the workpiece 10 immersed in the polishing liquid 32 increases accordingly, and the current value 541 of the workpiece 10, the polishing liquid 32 and the loop 60 of the power supply 40 is obtained by the monitoring assembly 50.

Through the step described in step S40, if the current value 541 obtained by the monitoring component 50 is greater than or less than a preset current value range 70, the monitoring component 50 transmits the control signal 52 to the feeding component 20, and the feeding component 20 moves the workpiece 10 at a second speed.

Among them, in this embodiment, the preset current value range 70 includes a maximum preset current value 72 and a minimum preset current value 74, and the maximum preset current value 72 and the minimum preset current value 74 correspond to the displacement increase of the workpiece 10.

Among them, when the current value 541 obtained by the monitoring component 50 is greater than the maximum preset current value 72, the second rate is less than the first rate, that is, the feeding component 20 reduces the original speed of moving the workpiece 10, slows down the rising speed of the current value 541, and avoids the current rising too fast, causing the power of the device to be overloaded, resulting in the shutdown of the plasma electrolytic polishing device or the risk of damage.

On the contrary, when the current value 541 obtained by the monitoring component 50 is less than the minimum preset current value 74, the second rate is greater than the first rate, that is, the feed component 20 increases the original speed of moving the workpiece 10 to avoid uneven polishing accuracy of the workpiece 10.

The plasma electrolytic polishing technique described in this embodiment is to immerse the workpiece 10 to be polished in the polishing liquid 32, and at the same time apply the anode 42 (positive voltage) to the workpiece 10. Under appropriate working conditions, such as when the high voltage in this embodiment is short-circuited instantly and the polishing liquid 32 boils, the surface of the workpiece 10 will have A stable vapor gas layer (the aforementioned oxide film) is formed, and the vapor gas layer will separate the workpiece 10 from the polishing liquid 32. A strong plasma chemical and electrochemical reaction will occur between the vapor and the medium, causing cathodic oxidation on the workpiece surface and chemical corrosion of the cathodic oxide layer. When the oxidation rate is equal to the corrosion rate, a polishing effect will appear.

The aforementioned plasma is also called the fourth state of matter. It is an electromagnetic gas discharge phenomenon that partially ionizes gaseous particles. The ionized gas includes atoms, molecules, atomic radicals, ions and electrons.

Plasma is when electrons escape from the nucleus under high temperature and high pressure, and the nucleus forms a positively charged ion. When these ions reach a certain number, they can become a plasma state. The plasma state has great energy. When these plasmas collide with the object to be polished, the surface of the object will be brightened for a short time.

The plasma electrolytic polishing device of this embodiment uses plasma composite electrolysis technology, with the positive electrode of the power source connected to the workpiece 10 as the positive electrode 42, and the negative electrode connected to the metal material or the conductive polishing tank as the negative electrode 44, wherein the conductive tank body 30 contains the polishing liquid 32. After turning on the power source 40, the conductivity data of the polishing liquid 32 is measured and fed back, and the processing parameter database corresponding to the reference material can be added for comparison to automatically set the initial workpiece After the moving speed is preset, the workpiece 10 of the anode electrode 42 is moved and immersed in the polishing liquid 32 in the conductive tank 30. When the workpiece 10 begins to contact the polishing liquid 32 and immerse, the current change after the workpiece 10 immerses in the polishing liquid 32 is continuously monitored, which is a current characteristic ICF of the stable period of the air film 12 on the surface of the workpiece 10. The current characteristic ICF is based on the crest factor (CF, Crest Factor; PAR, Peak-to-Average Ratio) of the current within a specific time range.

Next, the following practical example is given to illustrate the operation of the plasma electrolytic polishing device of this embodiment. Please refer to Figures 2A to 2B, which are schematic diagrams of the operation of the plasma electrolytic polishing device of one embodiment of the present invention.

When the user needs to polish the stainless steel metal object (the workpiece 10), the positive electrode 42 of the power source 40 is first electrically connected to the stainless steel metal object (the workpiece 10), and the negative electrode 44 of the power source 40 is electrically connected to the polishing liquid 32. At this time, the voltage value set by the power source 40 is greater than 260V, and the polishing liquid 32 used for the corresponding stainless steel metal object is an ammonium sulfate polishing liquid, that is, an ammonium sulfate composite polishing liquid with a chelating agent added.

The user controls the feeding assembly 20 to drive the stainless steel metal object (the workpiece 10) to move toward the polishing liquid 32 at the first rate (e.g., 5 mm/s). At this time, the surface of the stainless steel metal object (the workpiece 10) contacts the polishing liquid 32, and the power source 40 applies a high voltage to cause an oxidation-reduction reaction on the surface of the stainless steel metal object (the workpiece 10), and an oxide film is formed on the surface of the stainless steel metal object (the workpiece 10).

Since the surface of the stainless steel metal object (the workpiece 10) and the polishing liquid 32 are short-circuited due to the high voltage, the polishing liquid 32 on the surface of the stainless steel metal object (the workpiece 10) boils, forming the air film 12 surrounding the stainless steel metal object (the workpiece 10), and the air film 12 further isolates the stainless steel metal object (the workpiece 10). ) and the polishing liquid 32, and because the high-voltage electric field forms plasma energy in the air film 12, it will produce strong plasma chemical and electrochemical reactions, causing cathodic oxidation on the surface of the stainless steel metal object (the workpiece 10), and at the same time causing the cathodic oxide layer to be chemically eroded. When the oxidation rate is equal to the erosion rate, a polishing effect will appear.

When the user controls the stainless steel metal object (the workpiece 10) to move toward the polishing liquid 32 at the first rate through the feeding assembly 20, the current value 541 of the loop 60 (formed by the workpiece 10, the polishing liquid 32 and the power source 40) is obtained through the current sensing element 54 of the monitoring assembly 50.

Continuing from the above, the user can understand the polishing state of the workpiece 10 by observing the immersion time of the workpiece 10 in the polishing liquid 32 and the current value 541 obtained by the loop 60. Please refer to Figure 4, which is a schematic diagram of the current and time of an embodiment of the plasma electrolytic polishing of the present invention. As shown in Figure 4, the lower part is the current and time variation of the workpiece 10 in the polishing liquid 32 in the ideal state curve (Current-Time Characteristic).

The user can observe that when the workpiece 10 is immersed in the polishing liquid 32 for a gradually increasing immersion time, the typical Faraday electrolysis phenomenon occurs in stage 1 and follows Ohm's law. The current value 541 increases with time, and the workpiece 10 at the anode 42 generates electrolytic oxygen bubbles. This is a current stability state.

When the immersion time of the workpiece 10 reaches stage 2, the current value 541 of the loop 60 increases (according to Joule's law), and the surface of the workpiece 10 that contacts the polishing liquid 32 generates a large amount of heat and rises to boiling. Boiling bubbles and electrolytic bubbles are generated at the same time, forming the air film 12 that does not completely cover the workpiece 10. The air film 12 at this stage makes the current present irregular and large fluctuations, which belongs to the unstable current stability state.

When the immersion time of the workpiece 10 reaches stage 3, the polishing liquid 32 boils and completely forms the air film 12 covering the workpiece 10, reaching a nearly insulating condition. The high voltage also generates a plasma polishing effect inside the air film 12. At this time, the current is stable, belonging to the current stability state. In one embodiment, the speed of the workpiece 10 in the current stability state is greater than the speed of the workpiece 10 in the current instability state.

Next, the current value 541 is sensed by the inductive sensing element 54 of the monitoring component 50, wherein the current measurement range sensed by the inductive sensing element 54 is between 0.01A and 100A, and the signal sampling rate of the inductive sensing element 54 is between 1S/sec and 400kS/sec, wherein S represents the number of samples and sec represents seconds.

Among them, since different power supplies will produce different ranges, the current value 541 of this embodiment is between 0.1-30A. Furthermore, according to different workpiece materials, different workpiece sizes, and different electrolytes, there are different preset current value ranges 70. Therefore, the preset current value range 70 of this embodiment is between 0.1-10A. Furthermore, since the speed range of the first speed is related to equipment capacity, workpiece material, workpiece size, electrolyte type, etc., the first speed of this embodiment is between 1 and 100mm/s.

According to the above-mentioned plasma electrolysis condition range, when the current value 541 obtained by the user through the current sensing element 54 of the monitoring assembly 50 is 5A, and the preset maximum preset current value 72 is 0.8A, it can be known that the current value 541 is greater than the maximum preset current value 72. At this time, the second rate is 3mm/s, and the first rate is 5mm/s. Because the second rate is less than the first rate, the feed assembly 20 reduces the original speed of moving the workpiece 10, slowing down the rising speed of the current value 541, and avoiding the current rising too fast, causing the power of the device to be overloaded, resulting in the shutdown of the plasma electrolytic polishing device or the risk of damage.

On the contrary, when the current value 541 obtained by the current sensing element 54 of the monitoring assembly 50 is less than the minimum preset current value 74, the second rate is greater than the first rate, that is, the feed assembly 20 increases the original speed of moving the workpiece 10 to avoid uneven polishing accuracy of the workpiece 10.

Plasma electrolytic polishing equipment is known to only slowly immerse the workpiece into the polishing liquid based on experience in order to achieve stable polishing operation. It lacks the ability to grasp and monitor the mechanism of process changes, resulting in inconsistent process quality, inability to improve productivity, and a large amount of time-consuming and labor-intensive pre-trial and error operation experience accumulation before polishing different materials.

This embodiment solves the problem of only being able to perform polishing procedures based on experience. Furthermore, the plasma electrolytic polishing device of this embodiment optimizes and adjusts the plasma electrolytic polishing processing rate, and can promptly issue an alarm when the process fails, adjust the workpiece feed servo unit linkage, slow down the feed speed to restore the process air film stability, or shut down in time to avoid continuing the failed polishing process to reduce working hours, damage to workpieces and waste of electricity.

The embodiment described above is a plasma electrolytic polishing device, which is a feeding assembly that moves the workpiece to be processed, and obtains the current value of the circuit of the workpiece, polishing liquid and power supply through the monitoring assembly, and then adjusts the movement speed of the feeding assembly according to the change of the current value, optimizes and adjusts the plasma electrolytic polishing processing rate, and can issue an alarm in time when the process fails, adjust the workpiece feeding servo unit linkage, slow down the feeding speed to restore the process air film stability, or stop the machine in time to avoid continuing the failed polishing process to reduce working hours, damage to workpieces and waste of electricity.

Therefore, this invention is novel, progressive and can be used in the industry. It should undoubtedly meet the patent application requirements of the Patent Law of our country. Therefore, I have filed an invention patent application in accordance with the law. I hope that the Bureau will approve the patent as soon as possible. I am very grateful.

However, the above is only a preferred embodiment of the present invention and is not intended to limit the scope of implementation of the present invention. All equivalent changes and modifications made according to the shape, structure, features and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

10: Workpiece 20: Feed assembly 22: Motor 24: Feed shaft 26: Clamping part 30: Conductive tank 32: Polishing liquid 40: Power supply 42: Anode 44: Cathodic electrode 50: Monitoring assembly 60: Loop

Claims (10)

A plasma electrolytic polishing device is used for electrolytic polishing a workpiece. The plasma electrolytic polishing device comprises: a feeding assembly, one end of which is used to set the workpiece, wherein the feeding assembly drives the workpiece at a moving rate; a conductive trough body, which is correspondingly arranged below one of the feeding assemblies, and an inner side of the conductive trough body is used to set a polishing liquid; a power source, which comprises an anode and a cathode, the anode is electrically connected to the workpiece, and the cathode is electrically connected to the conductive trough body; and a monitoring assembly, which is The feed assembly is electrically connected to the monitoring assembly, the monitoring assembly includes an inductive sensing element, and the monitoring assembly is electrically connected to the feed assembly and the power source; wherein the feed assembly drives the workpiece to be immersed in the polishing liquid, so that the workpiece, the polishing liquid, the conductive tank and the power source form a loop, and the inductive sensing element is configured to sense a current value of the loop; wherein the monitoring assembly is configured to transmit a control signal to the feed assembly according to the current value, and the feed assembly adjusts the moving speed according to the control signal. The plasma electrolytic polishing device as described in claim 1, wherein the feed assembly includes a motor, a feed shaft and a clamping part, the feed shaft is pivotally connected to the motor, the other end of the feed shaft is provided with the clamping part, and the clamping part clamps the workpiece. A plasma electrolytic polishing device as described in claim 1, wherein a voltage value of the power source is greater than 260V. A plasma electrolytic polishing device as described in claim 1, wherein the polishing liquid is an ammonium sulfate polishing liquid. The plasma electrolytic polishing device as described in claim 1, wherein the monitoring component further comprises a monitoring logic calculation module and an axis drive signal generating element, the monitoring logic calculation module is electrically connected to the induction sensing element and the axis drive signal generating element, and the axis drive signal generating element is electrically connected to the feed component. The plasma electrolytic polishing device as described in claim 5, wherein the inductive force sensing element is a current transformer or a Hall sensor element. The plasma electrolytic polishing device as described in claim 5, wherein the shaft drive signal generating element is a pulse signal element or a voltage analog signal element. The plasma electrolytic polishing device as described in claim 1, wherein the current flow measurement range of the current flow sensing element is between 0.01A and 100A. A plasma electrolytic polishing device as described in claim 1, wherein the signal sampling rate of the current sensing element is between 1S/sec and 400kS/sec, where S represents the number of samples and sec represents seconds. The plasma electrolytic polishing device as described in claim 1, wherein the workpiece includes a current stability state and a current instability state when immersed in the polishing liquid, and the movement speed of the feed component in the current stability state is greater than the movement speed of the feed component in the current instability state.