TWI876703B - Test socket and manufacturing method thereof for integrated circuit testing - Google Patents
Test socket and manufacturing method thereof for integrated circuit testing Download PDFInfo
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- TWI876703B TWI876703B TW112145704A TW112145704A TWI876703B TW I876703 B TWI876703 B TW I876703B TW 112145704 A TW112145704 A TW 112145704A TW 112145704 A TW112145704 A TW 112145704A TW I876703 B TWI876703 B TW I876703B
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本發明涉及IC測試的領域,特別是指一種用於IC測試的測試插座及其製造方法。 The present invention relates to the field of IC testing, and in particular to a test socket for IC testing and a manufacturing method thereof.
積體電路測試(IC測試)是電子產業中的關鍵過程,確保IC在被整合到各種電子設備之前的功能性和可靠性。IC測試的常見方法涉及使用測試插座,該測試插座提供IC和測試電路之間的電連接。這種連接通常由導電柱(也稱為彈性插座)來實現,這些導電柱嵌入在測試插座內的絕緣支架中。絕緣支撐架通常設計有通孔,允許導電柱穿過並建立必要的電連接。導電柱通常由導電粒子和軟性材料(如矽膠)組成,以提供使柱體能夠適應不同大小和形狀的IC的彈性。然而,導電柱與絕緣支撐架的穩固附著是測試插座設計和製造中的一個問題。這種附著的強度可以影響測試插座的耐用性和壽命,以及IC測試期間的電連接的穩定性。此外,測試插座的設計還必須考慮防止短路。當導電柱在IC測試期間被壓下時,存在它們可能彼此接觸,導致短路的風險。 Integrated circuit testing (IC testing) is a critical process in the electronics industry, ensuring the functionality and reliability of ICs before they are integrated into various electronic devices. A common method of IC testing involves the use of a test socket that provides an electrical connection between the IC and the test circuit. This connection is usually made by conductive posts (also called flexible sockets) that are embedded in insulating supports within the test socket. The insulating support frame is usually designed with through holes that allow the conductive posts to pass through and establish the necessary electrical connection. Conductive posts are usually composed of conductive particles and soft materials (such as silicone) to provide flexibility that enables the post to adapt to ICs of different sizes and shapes. However, the stable attachment of the conductive posts to the insulating support frame is a problem in the design and manufacture of test sockets. The strength of this attachment can affect the durability and life of the test socket, as well as the stability of the electrical connection during IC testing. In addition, the design of the test socket must also consider preventing short circuits. When the conductive posts are pressed down during IC testing, there is a risk that they may contact each other, causing a short circuit.
然而,目前的測試插座,其導電柱往往採壓模方式成型,受限於模具脫模方式而無法將導電柱高度提升,可承受的彈性空間小。若IC因封裝製程公差產生的不同大小的錫球或因溫差產生的翹曲型變,則在使用測試插座時便會產生問題,從而有待測IC與測試電路之間無法有效電性接觸或接觸不穩定的問題產生。例如,US 7,726,984 B2,US 9,263,817 B2,TW1800143 B所揭露的技術是利用較硬材質,例如Polyimide,所製成的絕緣支撐架支撐較軟材質,例如Silicone,所製 成的彈性導電體。然而,由於二者為不同材質,因此彈性導電體與絕緣支撐架間固定力量不足,長期使用有導電體脫離之支架問題。又例如,US 9,488,675 B2,KR100972662B1所揭露的技術是絕緣支撐架及彈性導電體係採同silicone材質一體成形,此種結構大多會採用模具壓合,但在固化導電膠時無法完全清除表面殘留模具金屬粉粒,有潛在漏電及電離子遷移風險,且由於支撐架材質偏軟,其使用壽命亦較短。 However, the conductive posts of current test sockets are often formed by compression molding. Due to the mold release method, the height of the conductive posts cannot be increased, and the elastic space that can be tolerated is small. If the IC has different sizes of solder balls due to packaging process tolerance or warping deformation due to temperature difference, problems will arise when using the test socket, resulting in ineffective electrical contact or unstable contact between the IC to be tested and the test circuit. For example, the technology disclosed in US 7,726,984 B2, US 9,263,817 B2, and TW1800143 B uses an insulating support frame made of a harder material, such as Polyimide, to support a flexible conductor made of a softer material, such as Silicone. However, since the two are made of different materials, the fixing force between the elastic conductor and the insulating support frame is insufficient, and the conductor may detach from the support frame after long-term use. For example, the technology disclosed in US 9,488,675 B2 and KR100972662B1 is that the insulating support frame and the elastic conductor are formed in one piece with the same silicone material. This structure is mostly molded, but the residual mold metal particles on the surface cannot be completely removed when the conductive glue is cured, which has the potential risk of leakage and ion migration. In addition, since the material of the support frame is relatively soft, its service life is also relatively short.
也因此,上述提及的缺陷,是值得值得本領域通常知識者去思考和解決的問題。 Therefore, the above-mentioned defects are issues that are worth considering and solving by those with general knowledge in this field.
為了解決上述問題,本發明之目的在於提供一種用於IC測試的測試插座及其製造方法 In order to solve the above problems, the purpose of the present invention is to provide a test socket for IC testing and a manufacturing method thereof
基於上述目的與其他目的,本發明提供了一種用於IC測試的增強型測試插座,該插座增強了導電柱與絕緣支撐結構的穩固附著,從而增加了測試插座的壽命和測試期間電連接的穩定性。為了實現上述和其他目標,測試插座包括一個絕緣支撐結構,該結構具有多個通孔,以及多個導電柱,其中一部分導電柱嵌入在絕緣支撐結構中並通過通孔延伸。 Based on the above and other purposes, the present invention provides an enhanced test socket for IC testing, which enhances the stable attachment of the conductive pillars to the insulating support structure, thereby increasing the life of the test socket and the stability of the electrical connection during the test. In order to achieve the above and other goals, the test socket includes an insulating support structure having a plurality of through holes, and a plurality of conductive pillars, wherein a portion of the conductive pillars are embedded in the insulating support structure and extend through the through holes.
在上述測試插座中,絕緣支撐結構包括多個位於通孔旁邊的凹槽,並且導電柱的一部分嵌入在這些凹槽中。導電柱具有一個位於絕緣支撐結構下方的第一部分和一個位於絕緣支撐結構上方的第二部分。絕緣支撐結構可以是一個硬支架和一個軟支架,軟支架位於硬支架的上表面,並且硬支架層比導電柱硬。 In the above test socket, the insulating support structure includes a plurality of grooves located beside the through hole, and a portion of the conductive column is embedded in the grooves. The conductive column has a first portion located below the insulating support structure and a second portion located above the insulating support structure. The insulating support structure can be a hard support and a soft support, the soft support is located on the upper surface of the hard support, and the hard support layer is harder than the conductive column.
硬支架可以由多層不同組成的薄層組成。凹槽可以位於硬支架內。測試插座還可以包括多個位於導電柱旁邊的防短路支架,並且防短路支架由絕緣材料製成。這些防短路支架的高度可以在導電柱的第二部分高度的0.7到4倍的範圍內。 The hard support may be composed of multiple thin layers of different compositions. The groove may be located in the hard support. The test socket may also include multiple anti-short circuit supports located next to the conductive column, and the anti-short circuit supports are made of insulating material. The height of these anti-short circuit supports may be in the range of 0.7 to 4 times the height of the second portion of the conductive column.
導電柱的第一部分的高度可以在10到100微米的範圍內,並且第二部分的高度可以是第一部分高度的2到10倍。第一部分的直徑與第二部分的直徑的比例可以在5/6到6/5的範圍內。絕緣支撐結構可以選自由聚酰亞胺、PCB材料和陶瓷材料組成的群組中選擇的材料製成。導電柱可以由導電粒子和矽膠組成,其中導電粒子由選自由金屬粉末、金屬合金粉末、石墨粉末、導電化合物和導電塑料組成的群組中選擇。 The height of the first portion of the conductive pillar may be in the range of 10 to 100 microns, and the height of the second portion may be 2 to 10 times the height of the first portion. The ratio of the diameter of the first portion to the diameter of the second portion may be in the range of 5/6 to 6/5. The insulating support structure may be made of a material selected from the group consisting of polyimide, PCB material, and ceramic material. The conductive pillar may be composed of conductive particles and silicone, wherein the conductive particles are selected from the group consisting of metal powder, metal alloy powder, graphite powder, conductive compound, and conductive plastic.
本發明還提供了一種製造用於IC測試的測試插座的方法。該方法包括以下步驟: The present invention also provides a method for manufacturing a test socket for IC testing. The method comprises the following steps:
首先,形成一個包括第一犧牲層、絕緣支撐層和第二犧牲層的分層結構。然後,在該分層結構中形成多個通孔,並在絕緣支撐層中的通孔內形成多個凹槽。接著,將導電凝膠填充到通孔中以形成多個導電柱。最後,移除第一犧牲層和第二犧牲層。 First, a layered structure including a first sacrificial layer, an insulating support layer, and a second sacrificial layer is formed. Then, a plurality of through holes are formed in the layered structure, and a plurality of grooves are formed in the through holes in the insulating support layer. Next, a conductive gel is filled into the through holes to form a plurality of conductive pillars. Finally, the first sacrificial layer and the second sacrificial layer are removed.
在某些實施例中,該方法還包括將多個防短路支架放置在導電柱旁邊的步驟。在其他實施例中,該方法包括形成一個包括第一犧牲層、絕緣支撐層、防短路層和第二犧牲層的分層結構。 In some embodiments, the method further includes the step of placing a plurality of anti-short circuit brackets next to the conductive column. In other embodiments, the method includes forming a layered structure including a first sacrificial layer, an insulating support layer, an anti-short circuit layer, and a second sacrificial layer.
在某些實施例中,移除第一犧牲層和第二犧牲層的步驟包括剝離第一和第二犧牲層或使用溶劑溶解第一和第二犧牲層。在其他實施例中,使用溶劑溶解第一和第二犧牲層的步驟包括水解、溶劑溶解或酸鹼溶液溶解。 In some embodiments, the step of removing the first sacrificial layer and the second sacrificial layer includes peeling off the first and second sacrificial layers or dissolving the first and second sacrificial layers using a solvent. In other embodiments, the step of dissolving the first and second sacrificial layers using a solvent includes hydrolysis, solvent dissolution, or acid-base solution dissolution.
在某些實施例中,絕緣支撐層包括一個硬支架層和一個軟支架層,軟支架層位於硬支架層上方。在其他實施例中,硬支架層包括多層不同組成的薄層。 In some embodiments, the insulating support layer includes a hard support layer and a soft support layer, and the soft support layer is located above the hard support layer. In other embodiments, the hard support layer includes multiple thin layers of different compositions.
在某些實施例中,第一和第二犧牲層的材料由正相光阻、聚酰亞胺、聚乙烯醇(PVA)和矽膠組成的群組中選擇。在其他實施例中,第二犧牲層的厚度是第一犧牲層厚度的2到10倍。 In some embodiments, the materials of the first and second sacrificial layers are selected from the group consisting of positive phase photoresist, polyimide, polyvinyl alcohol (PVA) and silicone. In other embodiments, the thickness of the second sacrificial layer is 2 to 10 times the thickness of the first sacrificial layer.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above features and advantages of the present invention more clearly understood, the following is a detailed description of the preferred embodiment with the accompanying drawings.
S110-S150、S210-S260:流程圖符號 S110-S150, S210-S260: Flowchart symbols
100、200、300:測試插座 100, 200, 300: test socket
110、210:絕緣支撐結構 110, 210: Insulation support structure
112、212’、112’:通孔 112, 212’, 112’: through hole
114、214、114’、214’:凹槽 114, 214, 114’, 214’: groove
120:導電柱 120: Conductive column
122:第一部分 122: Part 1
124:第二部分 124: Part 2
126:凸起部 126: Raised part
127:導電粒子 127: Conductive particles
128:軟性材料 128: Soft material
216:硬支架 216:Hard bracket
218:軟支架 218: Soft support
230:防短路支架 230: Anti-short circuit bracket
300:測試插座 300: Test socket
330:防短路支架 330: Anti-short circuit bracket
100’、200’、300’:分層結構 100’, 200’, 300’: Layered structure
105'、205':第一犧牲層 105', 205': First sacrificial layer
110'、210':絕緣支撐層 110', 210': Insulation support layer
115'、215':第二犧牲層 115', 215': Second sacrificial layer
120':導電凝膠 120': Conductive gel
216':硬支架層 216': Hard support layer
218':軟支架層 218': Soft support layer
330':防短路支架層 330': Anti-short circuit support layer
圖1所繪示為本發明的用於IC測試的測試插座的其中一實施例的部分剖面圖。 FIG1 shows a partial cross-sectional view of one embodiment of the test socket for IC testing of the present invention.
圖2A至圖2D所繪示為不同導電柱的第一部分與第二部分的直徑比例。 Figures 2A to 2D show the diameter ratios of the first and second parts of different conductive columns.
圖3所繪示為本發明的用於IC測試的測試插座的另外一實施例。 FIG3 shows another embodiment of the test socket for IC testing of the present invention.
圖4所繪示為圖1之測試插座的製造過程的流程圖。 Figure 4 shows a flow chart of the manufacturing process of the test socket in Figure 1.
圖5A-圖5E所繪示為對應到圖4各步驟的中間產物之示意圖。 Figures 5A-5E are schematic diagrams of the intermediate products corresponding to each step of Figure 4.
圖6所繪示為圖2之測試插座的製造過程的流程圖。 FIG6 is a flow chart showing the manufacturing process of the test socket of FIG2.
圖7A-圖7F所繪示為對應到圖6各步驟的中間產物之示意圖。 Figures 7A-7F are schematic diagrams of the intermediate products corresponding to the steps of Figure 6.
圖8A所繪示為再一實施例之測試插座的製造過程的其中一步驟的中間產物之示意圖。 FIG8A is a schematic diagram of an intermediate product of one step in the manufacturing process of a test socket of another embodiment.
圖8B所繪示為本發明的用於IC測試的測試插座的再一實施例。 FIG8B shows another embodiment of the test socket for IC testing of the present invention.
請參照圖1,圖1所繪示為本發明的用於IC測試的測試插座的其中一實施例的部分剖面圖。在本實施例中,測試插座100是用於IC的測試(IC測試),測試插座100包含一絕緣支撐結構110和多個導電柱120。該絕緣支撐結構110具有多個通孔112,這些通孔112是用於容納上述導電柱120。這些導電柱120則有部分嵌入在絕緣支撐結構110中,並通過通孔112延伸以建立IC測試用的電連接。
Please refer to FIG. 1, which is a partial cross-sectional view of one embodiment of the test socket for IC testing of the present invention. In this embodiment, the
導電柱120具有彈性,使其能夠適應IC封裝之翹曲(Warpage)及BGA焊球尺寸之公差(Tolerance)所產生之變異。在本實施例中,導電柱120由導電粒子127和軟性材料128(如矽膠)所組成。導電柱120還包括兩部分:一部分(以下稱為第一部分122)位於絕緣支撐結構110下方,另一部分(以下稱為第二部分124)位
於絕緣支撐結構110上方。如上述這樣的導電柱120結構使其能夠有效地橋接IC和測試電路之間的間隙,促進測試期間的電信號的傳輸。
The
除了通孔112外,絕緣支撐結構110還具有多個位於通孔112旁邊的凹槽114。這些凹槽114提供了一個空間,讓導電柱120的一部分(以下稱為凸起部126)嵌入,增強了導電柱120與絕緣支撐結構110的穩固附著。其次,凹槽114也有助於絕緣支撐結構110的整體結構完整性,從而增強測試插座100的強度和耐用性。這裡的語句"凹槽114也有助於絕緣支撐結構110的整體結構完整性,從而增強測試插座100的強度和耐用性"意味著凹槽114在絕緣支撐結構110中扮演了關鍵的結構角色,它們提供了額外的支撐,使導電柱120能夠更穩定地固定在絕緣支撐結構110中。從而增強了測試插座100的強度,使其更能夠承受在IC測試期間可能遇到的各種壓力和應力。此外,由於導電柱120的凸起部126嵌入在凹槽114中,這也增加了導電柱120與絕緣支撐結構110之間的接觸面積,從而增強了其整體耐用性。
In addition to the through
總之,本實施例之測試插座100包括其絕緣支撐結構110和導電柱120,為IC測試提供了一個堅固和靈活的解決方案。絕緣支撐結構110具有通孔112和凹槽114,並且導電柱120部分嵌入其中,確保了IC測試的穩定和可靠的電連接,同時也增強了測試插座100的壽命。
In summary, the
以下,將對測試插座100的各元件進行更詳細的敘述,請繼續參照圖1。絕緣支撐結構110是測試插座100中提供給導電柱120的框架並促進導電柱120穩固的附著。此絕緣支撐結構110的其中一特點是具有許多通孔112,這些通孔112的設置使導電柱120能夠穿過它們,從而建立IC測試所需的電性連接。除了通孔112外,絕緣支撐結構110還具有多個位於通孔112旁邊的凹槽114。這些凹槽114的設置是為了增強導電柱120與絕緣支撐結構110的穩固附著。具體來說,導電柱120的一部分,亦即:凸起部126,嵌入在這些凹槽114中,從而增加了導電柱120與
絕緣支撐結構110之間的接觸面積。這些增加的接觸面積增強了導電柱120與絕緣支撐結構110之間的附著力,減少了在測試過程中導電柱120從絕緣支撐結構110上脫落的可能性。此外,絕緣支撐結構110中的凹槽114也有助於測試插座100的整體結構完整性。通過為導電柱120提供額外的支撐,凹槽114有助於維持導電柱在通孔112內的對齊,確保在IC測試期間穩定且可靠的電性連接。絕緣支撐結構110的這種設計特點,結合導電柱120的靈活性,使測試插座100能夠適應IC封裝之翹曲(Warpage)及BGA焊球尺寸之公差(Tolerance)所產生之變異,從而增強其在IC測試中的多功能性和適用性。
The components of the
導電柱120提供IC與測試電路之間的電連接。這些導電柱120中的導電粒子127可以由各種材料製成,包括金屬粉末、金屬合金粉末、石墨粉末、導電化合物和導電塑料。導電粒子127的材料選擇可以影響測試插座100的導電性、耐用性和成本。此外,導電柱120的第一部分122位於絕緣支撐結構110下方,其設計的高度在10到100微米的範圍內。這個高度是為了適應測試電路上墊片(Pad)的製程公差,確保在測試期間穩定且可靠的電連接。導電柱120的第二部分124位於絕緣支撐結構110上方,其設計的高度是第一部分122高度的2到10倍。第二部分124的增加高度是為了適應IC的製程公差和溫度引起的變形,進一步增強測試插座100的多功能性。
The
在本實施例中,第一部分122與第二部分124的直徑比例在5/6到6/5的範圍內。這個比例可以根據IC和測試電路的具體要求進行調整,為測試插座的設計提供更大的靈活性。以下是一些例子:
In this embodiment, the diameter ratio of the
1.請參照圖2A,第一部分122與第二部分124的直徑比例為1.2:1時,且嵌入絕緣支撐結構110中的導電柱120的直徑與第一部分122的直徑相同。當需要在導電柱120底部有更大的接觸面積以更穩固地附著到測試電路板時,可以使用這種設計。
1. Referring to FIG. 2A , the diameter ratio of the
2.請參照圖2B,第一部分122與第二部分124的直徑比例為1:1.2時,且嵌入絕緣支撐結構110中的導電柱120的直徑與第二部分124的直徑相同。當需要在導電柱120頂部有更大的接觸面積以更穩固地附著到IC時,可以使用這種設計。
2. Referring to FIG. 2B , the diameter ratio of the
3.請參照圖2C,第一部分122與第二部分124的直徑比例為1:1,且嵌入絕緣支撐結構110中的導電柱120的直徑大於第一部分122與第二部分124的直徑。當需要IC和測試電路都有更大的接觸面積時,可以使用這種設計,例如處理較大或更堅固的元件。
3. Referring to FIG. 2C , the diameter ratio of the
4.請參照圖2D,第一部分122與第二部分124的直徑比例為1:1,且嵌入絕緣支撐結構110中的導電柱120的直徑小於第一部分122與第二部分124的直徑。當需要IC和測試電路都有較小的接觸面積時,可以使用這種設計,例如處理BGA焊球間距較小或更精細的元件。
4. Referring to FIG. 2D , the diameter ratio of the
這些例子說明了測試插座100的設計在適應IC和測試電路的不同要求方面的靈活性。通過調整導電柱120的第一部分122與第二部分124的直徑比例,以及嵌入絕緣支撐結構110中的導電柱120的直徑,測試插座100可以根據不同測試場景的具體要求進行定制。
These examples illustrate the flexibility of the design of the
接著,請參照圖3,圖3所繪示為本發明的用於IC測試的測試插座的另外一實施例。在此實施例中,測試插座200的絕緣支撐結構210由兩個明確的支架組成:一個硬支架216和一個軟支架218。這兩個支架以層疊的配置排列,軟支架218位於硬支架216的上表面。這種層疊配置為導電柱120提供了一個堅固且靈活的框架,有助於導電柱120在測試插座200中的穩固附著和對齊。其中,硬支架216形成了絕緣支撐結構210的基底,其特點是其硬度比導電柱120的硬度要大。硬支架216的這種硬度增強了測試插座200的結構完整性,為導電柱120提供了堅固且耐用的支撐。
Next, please refer to FIG. 3 , which shows another embodiment of the test socket for IC testing of the present invention. In this embodiment, the insulating
另一方面,軟支架218位於硬支架216的上表面。軟支架218的這種位置使其能夠為導電柱120提供一個靈活且可適應的介面,適應導電柱120在IC測試期間的移動和變形。軟支架218由一種比硬支架216更軟的材料製成,為導電柱120提供了所需的靈活性,同時也有助於提升測試插座200的整體耐用性。軟支架218的具體材料可以包括各種類型的彈性體或靈活的聚合物。例如,矽膠可能是一個合適的選擇,因為它具有良好的熱穩定性和電絕緣性能。其他可能的材料可以包括熱塑性彈性體(Thermoplastic Elastomer)、聚氨酯橡膠(Polyurethane Rubber)或聚氯乙烯。這些材料以其靈活性和耐用性而聞名,這將有助於提升測試插座200的整體耐用性。請注意,材料的選擇也將取決於其他因素,例如IC測試過程的具體要求、成本考慮以及與測試插座200的其他組件的可能的相容性問題。
On the other hand, the
總之,硬支架216和軟支架218形成了一個複合的絕緣支撐結構210,該結構結合了硬支架216的堅固性和軟支架218的靈活性。這種複合結構增強了導電柱120與絕緣支撐結構210的穩固附著,降低了在測試過程中導電柱120從絕緣支撐結構210上脫落的可能性。此外,複合結構還有助於提升測試插座的整體耐用性和壽命,使其成為IC測試的可靠且具有成本效益的解決方案。
In summary, the
此外,在本實施例中,測試插座200還包括防短路支架230。這些防短路支架230是設置在導電柱120旁邊,並由絕緣材料製成。這些防短路支架230的主要功用是防止導電柱120彼此接觸並導致短路。這在IC測試期間導電柱120被壓下時尤其重要,因為向下的壓力可能會導致導電柱因彎曲而接觸並產生短路。通過將防短路支架230放置在導電柱120旁邊,有效地減輕了短路的風險,提高了測試插座200在測試期間的可靠性和安全性。此外,防短路支架230亦可防止焊球過度下壓,而損壞導電插座。
In addition, in the present embodiment, the
位於導電柱120旁邊的防短路支架230是由絕緣材料製成的。這些防短路支架230的材料選擇至關重要,因為它直接影響它們防止短路的效果。這些防短路支架230的材料具有高絕緣性,以有效防止導電柱120彼此接觸並導致短路。
The
在其中一實施例中,防短路支架230的高度被設計為導電柱120之第二部分124的高度的0.7到4倍。這個高度範圍確保了防短路支架230足夠高,可以防止導電柱120接觸,同時也足夠低,不會干擾導電柱120在測試期間的移動和變形。這種在高度和靈活性之間的平衡,讓防短路支架230能夠有效地防止短路,同時也能適應導電柱120在IC測試期間的動態性質。
In one embodiment, the height of the
另外,在本實施例中,凹槽214(圖3未標示)則是形成在絕緣支撐結構210的硬支架216中。凹槽214的結構及功效與圖1中的凹槽114類似,故在此便不再贅述。
In addition, in this embodiment, the groove 214 (not shown in FIG. 3 ) is formed in the
總之,將防短路支架230作為測試插座200的一部分,提高了IC測試期間測試插座200的安全性和可靠性。通過防止導電柱120接觸並導致短路,這些防短路支架230有助於提升測試插座200的整體性能和效能,使其成為IC測試的堅固且可靠的解決方案。
In summary, including the
請回去參照圖1並同時參照圖4與圖5A-圖5E,測試插座100的製造過程涉及幾個步驟。首先,如步驟S110及圖5A所示,是形成一個分層結構100'。這個分層結構100'包括一第一犧牲層105'、一絕緣支撐層110'、和一第二犧牲層115'。第一犧牲層105'與第二犧牲層115'作為臨時結構,有助於形成絕緣支撐結構110和導電柱120。在實施例中,第一犧牲層105'與第二犧牲層115'的材料是從由正相光阻、聚酰亞胺、聚乙烯醇(PVA)和矽膠組成的群組中選擇的。這些材料-正相光阻、聚酰亞胺、聚乙烯醇(PVA)和矽膠-都可以在製程後來的步驟中通過溶解或剝離來移除,具體取決於製程的特定條件和要求。
Referring back to FIG. 1 and referring to FIG. 4 and FIG. 5A-5E at the same time, the manufacturing process of the
接著,執行步驟S120。如圖5B所示,在形成分層結構100'後,會在其中製作出多個通孔112'。這些通孔112'被適當的定位以容納導電柱120,並促進導電柱120與絕緣支撐層110'的穩固附著。製作這些通孔112'涉及精確的鑽孔或蝕刻技術,以確保這些通孔112'的大小和位置與導電柱120的大小和位置精確對應。
Next, step S120 is performed. As shown in FIG. 5B , after the layered structure 100' is formed, a plurality of through holes 112' are formed therein. These through holes 112' are appropriately positioned to accommodate the
形成通孔112'後,執行步驟S130(如圖5C所示),在絕緣支撐層110'內,特別是在通孔112'的邊界處,精細地形成了凹槽114’。設計這些凹槽114’的目的是為了進一步增強導電柱120與絕緣支撐層110'的穩固附著。這些凹槽114’是經由減法製程所形成,減法製程例如為蝕刻(ething)或雕刻(carving),這允許導電柱120的一部分嵌入其中。這增加了導電柱120與絕緣支撐結構110之間的接觸面積,降低了在測試過程中導電柱120從絕緣支撐結構110上脫落的可能性,從而提高了測試插座100的整體可靠性。
After forming the through hole 112', step S130 (as shown in FIG. 5C) is performed to finely form grooves 114' in the insulating
在形成通孔112'和凹槽114’之後,執行步驟S140(如圖5D所示),將導電凝膠120'填充到通孔112'中。這種導電凝膠120'由導電粒子127和軟性材料128(如矽膠)組成,並在固化後形成導電柱120。導電柱120穿過通孔112',其中導電柱120的一部分,即凸起部126,嵌入在絕緣支撐層的凹槽114’中。導電柱120的一部分嵌入凹槽114’中增強了導電柱120與絕緣支撐結構110的穩固附著。這增加了導電柱120與絕緣支撐結構110之間的接觸面積,降低了在測試過程中導電柱120從絕緣支撐結構110上脫落的可能性,從而提高了測試插座100的整體可靠性。
After forming the through hole 112' and the groove 114', step S140 (as shown in FIG. 5D ) is performed to fill the conductive gel 120' into the through hole 112'. This conductive gel 120' is composed of
在形成導電柱120之後,執行步驟S150(如圖5E所示),移除第一犧牲層105'與第二犧牲層115'。這種移除可以通過各種方法實現,例如剝離第一犧牲層105'與第二犧牲層115'或使用溶劑溶解它們。移除第一犧牲層105'與第二犧牲層115'可將絕緣支撐結構110和導電柱120露出,完成了測試插座100。
After forming the
接下來,將介紹測試插座200的製造過程,請回去參照圖2並同時參照圖6與圖7A-圖7F。測試插座200的製造過程涉及幾個步驟,首先如步驟S210及圖7A所
示,是形成一個分層結構200'。這個分層結構200'包括一第一犧牲層205'、一絕緣支撐層210'、和一第二犧牲層215'。第一犧牲層205'與第二犧牲層215'為臨時結構。在本實施例中,第一犧牲層205'與第二犧牲層215'的材質與上述第一犧牲層105'與第二犧牲層115'的材質類似或相同,故不再贅述。此外,絕緣支撐層210'包括一硬支架層216'和一軟支架層218',且該軟支架層218'位於該硬支架層216'上方。
Next, the manufacturing process of the
接著,執行步驟S220。如圖7B所示,在形成分層結構200'後,會在其中製作出多個通孔212'。這些通孔212'被適當的定位以容納導電柱120,並促進導電柱120與絕緣支撐層210'的穩固附著。製作這些通孔212'與上述製作通孔112'的方式類似或相同,故不再贅述。
Next, step S220 is performed. As shown in FIG. 7B , after the layered structure 200' is formed, a plurality of through holes 212' are formed therein. These through holes 212' are appropriately positioned to accommodate the
形成通孔212'後,執行步驟S230(如圖7C所示),在絕緣支撐層210'的硬支架層216'內,特別是在通孔212'的邊界處,精細地形成了凹槽214’。
After forming the through hole 212', step S230 (as shown in FIG. 7C) is performed to finely form a groove 214' in the
在形成通孔212'和凹槽214’之後,執行步驟S240(如圖7D所示),將導電凝膠120'填充到通孔212'中。這種導電凝膠120'由導電粒子127和軟性材料128組成,並在固化後形成導電柱120。導電柱120穿過通孔212',其中導電柱120的一部分嵌入在絕緣支撐層的凹槽214’中。
After forming the through hole 212' and the groove 214', step S240 (as shown in FIG. 7D) is performed to fill the conductive gel 120' into the through hole 212'. This conductive gel 120' is composed of
在形成導電柱120之後,執行步驟S250(如圖7E所示),移除第一犧牲層205'與第二犧牲層215'。這種移除可以通過各種方法實現,例如剝離第一犧牲層205'與第二犧牲層215'或使用溶劑溶解它們。移除第一犧牲層205'與第二犧牲層215'可將導電柱120和包含硬支架216與軟支架218的絕緣支撐層210'露出,完成了測試插座200的主要部分。
After forming the
在本實施例中,還會執行步驟S260(如圖7F所示),將防短路支架230放置在導電柱120之第二部分124旁邊。這些防短路支架230由絕緣材料製成,用於防止導電柱120彼此接觸並導致短路。將這些支架放置在導電柱旁邊有效地減輕了短路的風險,提高了IC測試期間測試插座200的安全性和可靠性。
In this embodiment, step S260 (as shown in FIG. 7F ) is also performed to place the
此外,在某些實施例中,絕緣支撐結構110或絕緣支撐層210'的硬支架層216'包含多層不同的組成物。換句話說,絕緣支撐結構110中,絕緣支撐層210'的硬支架層216'可能由多層不同的材料製成。這些材料可根據它們的蝕刻選擇性,即對蝕刻過程的抵抗能力而選擇。當絕緣支撐結構110或絕緣支撐層210'的硬支架層216'進行蝕刻過程以形成凹槽214’時,蝕刻選擇性較低的層將比蝕刻選擇性較高的層更快被蝕刻。這種不同的蝕刻速率允許在絕緣支撐結構110或絕緣支撐層210'的硬支架層216'的所需區域形成凹槽214’。
In addition, in some embodiments, the insulating
另外,在某些實施例中,如圖8A所示,分層結構300'包括一第一犧牲層105'、一防短路支架層330'、一絕緣支撐層110'、和一第二犧牲層115'。其中,防短路支架層330'是防短路支架330的母材。在分層結構300'經過類似上述S220-S250的步驟後,便會形成如圖8B所示的測試插座300。如此設計的好處使得防短路支架330可以在製程中直接形成,提高了製程效率。也因此,相較於測試插座200,測試插座300中的防短路支架330會與導電柱120緊密相連,而不會存有間隙。
In addition, in some embodiments, as shown in FIG8A, the layered structure 300' includes a first sacrificial layer 105', an anti-short circuit support layer 330', an insulating
上述測試插座100,200,300各元件的材料,包括絕緣支撐結構、導電柱和防短路支架,都經過精心選擇,以優化測試插座100,200,300的性能和耐用性。舉例來說,絕緣支撐結構110或絕緣支撐結構210的硬支架216是由特定材料群組中選擇的材料製成。這個材料群組包括聚酰亞胺、PCB材料和陶瓷材料。這些材料各自具有特定的性質,有助於測試插座的整體性能。例如,聚酰亞胺以其出色的熱穩定性、電絕緣性和機械強度而聞名,使其成為絕緣支撐結構110或絕緣支撐結構210的硬支架216的合適選擇。同樣,PCB材料和陶瓷材料也以其堅固性和耐用性而聞名,有助於提高測試插座100,200,300的壽命。
The materials of the various components of the above-mentioned
此外,導電柱120為IC測試提供電性連接,由導電粒子127和軟性材料128組成。導電粒子127可以從包括金屬粉末、金屬合金粉末、石墨粉末、導電化合物和導電塑料的材料群組中選擇。導電粒子127的材料選擇可以影響導電柱120的
導電性和耐用性。軟性材料128,如矽膠,提供了彈性,使導電柱120能夠適應IC封裝之翹曲(Warpage)及BGA焊球尺寸之公差(Tolerance)所產生之變異。
In addition, the
而且,位於導電柱120旁邊的防短路支架230,330,由絕緣材料製成。這種材料被選擇是因為其高絕緣性,有效防止導電柱120彼此接觸並導致短路。防短路支架230,330的材料選擇有助於提高IC測試期間測試插座200,300的安全性和可靠性。防短路支架230,330的一些可能的材料包括:1.塑膠,如:聚氯乙烯或聚對苯二甲酸乙二醇酯等;2.陶瓷;3.複合材料,如:玻璃纖維或碳纖維複合材料;4.絕緣聚合物,如:聚酰亞胺或聚四氟乙烯(Teflon)等。
Furthermore, the
綜上,本發明相較於傳統的IC測試插座,提供了多項優勢。本發明的一項優勢在於在絕緣支撐結構中加入凹槽,這些凹槽位於通孔旁邊,它們提供了一個空間讓導電柱的一部分嵌入,增強了導電柱與絕緣支撐結構的穩固附著。經由增強了導電柱與絕緣支撐結構的穩固附著,從而增加了測試插座的壽命和測試期間電連接的穩定性。另外,測試插座中包含了位於導電柱旁邊的防短路支架,減輕了測試期間短路的風險。這一特性提高了測試插座的安全性和可靠性,使其成為IC測試的堅固解決方案。而且,絕緣支撐結構中硬支架和軟支架的使用,為導電柱提供了堅固且靈活的框架。這種複合結構增強了導電柱與絕緣支撐結構的穩固附著,降低了測試過程中導電柱從支撐結構上脫落的可能性。此外,複合結構也有助於提升測試插座的整體耐用性和壽命,使其成為IC測試的可靠且具有成本效益的解決方案。 In summary, the present invention provides multiple advantages over traditional IC test sockets. One advantage of the present invention is that grooves are added to the insulating support structure. These grooves are located next to the through holes. They provide a space for a portion of the conductive column to be embedded, thereby enhancing the stable attachment of the conductive column to the insulating support structure. By enhancing the stable attachment of the conductive column to the insulating support structure, the life of the test socket and the stability of the electrical connection during testing are increased. In addition, the test socket includes an anti-short circuit bracket located next to the conductive column, which reduces the risk of short circuits during testing. This feature improves the safety and reliability of the test socket, making it a solid solution for IC testing. Moreover, the use of hard and soft brackets in the insulating support structure provides a strong and flexible framework for the conductive column. This composite structure enhances the stable attachment of the conductive column to the insulating support structure and reduces the possibility of the conductive column falling off the support structure during testing. In addition, the composite structure also helps to improve the overall durability and life of the test socket, making it a reliable and cost-effective solution for IC testing.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of the patent application attached hereto.
100:測試插座 100: Test socket
110:絕緣支撐結構 110: Insulation support structure
112:通孔 112:Through hole
114:凹槽 114: Groove
120:導電柱 120: Conductive column
122:第一部分 122: Part 1
124:第二部分 124: Part 2
126:凸起部 126: Raised part
127:導電粒子 127: Conductive particles
128:軟性材料 128: Soft material
Claims (21)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112136098 | 2023-09-21 | ||
| TW112210224 | 2023-09-21 | ||
| TW112210224 | 2023-09-21 | ||
| TW112136098 | 2023-09-21 |
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| TWI876703B true TWI876703B (en) | 2025-03-11 |
| TW202514117A TW202514117A (en) | 2025-04-01 |
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| TW112145704A TWI876703B (en) | 2023-09-21 | 2023-11-24 | Test socket and manufacturing method thereof for integrated circuit testing |
| TW112212854U TWM654033U (en) | 2023-09-21 | 2023-11-24 | Test sockets for IC testing |
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| TWI876703B (en) * | 2023-09-21 | 2025-03-11 | 禾周科技股份有限公司 | Test socket and manufacturing method thereof for integrated circuit testing |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200843259A (en) * | 2007-03-30 | 2008-11-01 | Jsr Corp | Anisotropic conductive connector, probe member and wafer inspection equipment |
| TW201340470A (en) * | 2012-03-07 | 2013-10-01 | Advantest Corp | Socket, socket board, and electronic component testing device |
| TW201920973A (en) * | 2017-08-31 | 2019-06-01 | 南韓商Isc股份有限公司 | Test socket and conductive particle |
| TW201920962A (en) * | 2017-08-31 | 2019-06-01 | 南韓商Isc股份有限公司 | Test socket with carbon nanotubes |
| US20220099730A1 (en) * | 2020-09-25 | 2022-03-31 | Tse Co., Ltd. | Test socket and test apparatus having the same |
| TWM654033U (en) * | 2023-09-21 | 2024-04-11 | 禾周科技股份有限公司 | Test sockets for IC testing |
-
2023
- 2023-11-24 TW TW112145704A patent/TWI876703B/en active
- 2023-11-24 TW TW112212854U patent/TWM654033U/en unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200843259A (en) * | 2007-03-30 | 2008-11-01 | Jsr Corp | Anisotropic conductive connector, probe member and wafer inspection equipment |
| US20100127724A1 (en) * | 2007-03-30 | 2010-05-27 | Jsr Corporation | Anisotropic conductive connector, probe member and wafer inspection system |
| TW201340470A (en) * | 2012-03-07 | 2013-10-01 | Advantest Corp | Socket, socket board, and electronic component testing device |
| TW201920973A (en) * | 2017-08-31 | 2019-06-01 | 南韓商Isc股份有限公司 | Test socket and conductive particle |
| TW201920962A (en) * | 2017-08-31 | 2019-06-01 | 南韓商Isc股份有限公司 | Test socket with carbon nanotubes |
| US20220099730A1 (en) * | 2020-09-25 | 2022-03-31 | Tse Co., Ltd. | Test socket and test apparatus having the same |
| TW202212830A (en) * | 2020-09-25 | 2022-04-01 | 南韓商Tse有限公司 | Test socket and test apparatus having the same |
| TWM654033U (en) * | 2023-09-21 | 2024-04-11 | 禾周科技股份有限公司 | Test sockets for IC testing |
Also Published As
| Publication number | Publication date |
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| TW202514117A (en) | 2025-04-01 |
| TWM654033U (en) | 2024-04-11 |
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