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TWI876621B - Chip packaging structure and method for manufacturing air chamber for protecting chip functional area - Google Patents

Chip packaging structure and method for manufacturing air chamber for protecting chip functional area Download PDF

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Publication number
TWI876621B
TWI876621B TW112140832A TW112140832A TWI876621B TW I876621 B TWI876621 B TW I876621B TW 112140832 A TW112140832 A TW 112140832A TW 112140832 A TW112140832 A TW 112140832A TW I876621 B TWI876621 B TW I876621B
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chip
top surface
sublayer
substrate
molded layer
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TW112140832A
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Chinese (zh)
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TW202518693A (en
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謝明峰
張育嘉
趙俊發
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菱生精密工業股份有限公司
迅能半導體股份有限公司
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Priority to TW112140832A priority Critical patent/TWI876621B/en
Priority to CN202311575166.1A priority patent/CN119890151A/en
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Publication of TW202518693A publication Critical patent/TW202518693A/en

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    • H10W74/124
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H10W70/635
    • H10W70/65
    • H10W74/014
    • H10W74/129

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

本發明之晶片封裝結構包含有一基板、一固定於基板的晶片、一封裝體及複數電連接件。晶片具有至少一晶片功能區及複數位於晶片功能區之周緣的電性接點;封裝體固定於基板且圍繞包覆晶片,封裝體具有至少一容置各晶片功能區的氣室,以及複數分別對應各電性接點的通孔;該等電連接件分別設置於封裝體之各通孔,且各電連接件具有一電性連接各電性接點的內端,以及一外露於封裝體之外的外端。藉此,本發明之晶片封裝結構的加工成本較低。另外,本發明更提供一種保護晶片功能區的氣室的製造方法,其能減少額外的加工程序且有利於大量製造。The chip packaging structure of the present invention includes a substrate, a chip fixed to the substrate, a packaging body and a plurality of electrical connectors. The chip has at least one chip functional area and a plurality of electrical contacts located around the chip functional area; the packaging body is fixed to the substrate and surrounds and covers the chip, and the packaging body has at least one air chamber for accommodating each chip functional area, and a plurality of through holes corresponding to each electrical contact; the electrical connectors are respectively arranged in each through hole of the packaging body, and each electrical connector has an inner end electrically connected to each electrical contact, and an outer end exposed outside the packaging body. Thereby, the processing cost of the chip packaging structure of the present invention is relatively low. In addition, the present invention further provides a method for manufacturing an air chamber for protecting the chip functional area, which can reduce additional processing procedures and is conducive to mass production.

Description

晶片封裝結構及保護晶片功能區的氣室的製造方法Chip packaging structure and method for manufacturing air chamber for protecting chip functional area

本發明係與諸如表面聲波(Surface acoustic wave,簡稱SAW)濾波器、體聲波(Bulk acoustic wave,簡稱BAW)濾波器, SAW諧振器的RF濾波器,以及微機電的傳感器類的封裝有關,特別是一種晶片封裝結構,以及一種保護晶片功能區的氣室的製造方法。The present invention relates to packaging of surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, RF filters of SAW resonators, and micro-electromechanical sensors, and in particular to a chip packaging structure and a method for manufacturing an air chamber for protecting a chip functional area.

台灣公告第I720239號專利案揭露一種嵌入式射頻濾波器封裝結構及其製造方法。請參閱前述專利案中的圖4(以下標號引用自前述專利案),濾波器封裝結構10包含有一第一電介質層18、一設於第一電介質層18上方的SAW濾波器14、一黏合於SAW濾波器14和第一電介質層18之間的黏合劑24、一包覆SAW濾波器14的電介質封裝材料20、複數個分別穿設於第一電介質層18和黏合劑24的通孔26,以及複數個分別設於各通孔26中的金屬互連28。其中,SAW濾波器14具有一主動區域34,且SAW濾波器14以主動區域34朝下的方式黏附於黏合劑24,使主動區域34容置於黏合劑24之一空氣腔32,致使SAW濾波器14之主動區域34和壓電基板(請參閱前述專利案中的圖1)產生適當的振動和相關聯的聲波。Taiwan Patent Publication No. I720239 discloses an embedded RF filter package structure and a manufacturing method thereof. Referring to FIG. 4 of the aforementioned patent (the following reference numbers are quoted from the aforementioned patent), the filter package structure 10 includes a first dielectric layer 18, a SAW filter 14 disposed on the first dielectric layer 18, an adhesive 24 bonded between the SAW filter 14 and the first dielectric layer 18, a dielectric packaging material 20 covering the SAW filter 14, a plurality of through holes 26 respectively penetrating the first dielectric layer 18 and the adhesive 24, and a plurality of metal interconnects 28 respectively disposed in each through hole 26. The SAW filter 14 has an active region 34, and the SAW filter 14 is adhered to the adhesive 24 with the active region 34 facing downward, so that the active region 34 is accommodated in an air cavity 32 of the adhesive 24, so that the active region 34 of the SAW filter 14 and the piezoelectric substrate (please refer to Figure 1 in the aforementioned patent) generate appropriate vibrations and associated acoustic waves.

然而,前述濾波器封裝結構10在製造時,黏合劑24需透過雷射燒蝕或選擇性施加於電介質層18(例如噴墨式)的方式來形成空氣腔32,而第一電介質層18和黏附層24需透過雷射燒蝕、雷射鑽孔、電漿蝕刻、光刻或機械鑽孔等逐洞加工程序來形成該等通孔26,從而造成其製造方法較為繁複,並連帶提高加工成本。因此,前述專利案中的濾波器封裝結構10及其製造方法仍有改進的空間。However, when manufacturing the filter package structure 10, the adhesive 24 needs to be applied to the dielectric layer 18 by laser ablation or selectively (e.g., inkjet) to form the air cavity 32, and the first dielectric layer 18 and the adhesive layer 24 need to be processed by laser ablation, laser drilling, plasma etching, photolithography or mechanical drilling to form the through holes 26, which makes the manufacturing method more complicated and increases the processing cost. Therefore, the filter package structure 10 and the manufacturing method thereof in the aforementioned patent case still have room for improvement.

有鑑於上述缺失,本發明之主要目的在於提供一種晶片封裝結構,其加工成本較低。In view of the above shortcomings, the main purpose of the present invention is to provide a chip packaging structure with low processing cost.

為達上述主要目的,本發明之晶片封裝結構包含有一基板、一晶片、一封裝體,以及複數電連接件。該基板具有一頂面;該晶片固定於該基板之該頂面,該晶片具有一頂面、至少一位於該頂面的晶片功能區,以及複數位於該頂面的電性接點,且該等電性接點位於至少一該晶片功能區之周緣;該封裝體固定於該基板之該頂面且圍繞包覆該晶片,該封裝體具有至少一氣室及複數通孔,至少一該氣室容置該晶片之至少一該晶片功能區,該等通孔分別對應各該電性接點;複數電連接件分別設置於該封裝體之各該通孔,且各該電連接件具有一電性連接各該電性接點的內端,以及一外露於該封裝體之外的外端。To achieve the above main purpose, the chip package structure of the present invention includes a substrate, a chip, a package body, and a plurality of electrical connectors. The substrate has a top surface; the chip is fixed to the top surface of the substrate, the chip has a top surface, at least one chip functional area located on the top surface, and a plurality of electrical contacts located on the top surface, and the electrical contacts are located around at least one chip functional area; the package body is fixed to the top surface of the substrate and surrounds and covers the chip, the package body has at least one air chamber and a plurality of through holes, at least one of the air chambers accommodates at least one chip functional area of the chip, and the through holes correspond to each of the electrical contacts respectively; a plurality of electrical connectors are respectively arranged in each of the through holes of the package body, and each of the electrical connectors has an inner end electrically connected to each of the electrical contacts, and an outer end exposed outside the package body.

藉由上述技術特徵,由於本發明之晶片封裝結構所提供之該封裝體不須透過額外加工程序(例如雷射燒蝕、雷射鑽孔、電漿蝕刻、光刻或機械鑽孔)來逐洞形成至少一該氣室和該等通孔,所以本發明之晶片封裝結構的加工成本較低。By virtue of the above technical features, since the package body provided by the chip package structure of the present invention does not need to be processed through additional processing procedures (such as laser ablation, laser drilling, plasma etching, photolithography or mechanical drilling) to form at least one of the air chambers and the through holes one by one, the processing cost of the chip package structure of the present invention is relatively low.

較佳地,該封裝體具有一第一模壓層和一第二模壓層,該第一模壓層覆蓋於該基板之該頂面並圍繞於該晶片之周緣,且該第一模壓層具有複數所述通孔,該第二模壓層覆蓋於該第一模壓層之一頂面及各該電連接件,並與該第一模壓層之間形成至少一該氣室。如此,透過該第一、第二模壓層而共同形成該封裝體,使得該封裝體不須透過額外加工的方式來形成該等氣室和該等通孔。Preferably, the package has a first mold layer and a second mold layer, the first mold layer covers the top surface of the substrate and surrounds the periphery of the chip, and the first mold layer has a plurality of through holes, the second mold layer covers a top surface of the first mold layer and each of the electrical connectors, and forms at least one air chamber between the second mold layer and the first mold layer. In this way, the package is formed by the first and second mold layers, so that the package does not need to be formed by additional processing to form the air chambers and the through holes.

較佳地,該第一模壓層具有一第一子層及一覆蓋於該第一子層的第二子層,該第一子層覆蓋於該基板之該頂面並圍繞於該晶片之周緣,該第二子層具有一階部,該階部之一底面固定於該晶片之該頂面,且該階部被所述通孔貫穿;該第二模壓層覆蓋於該第二子層之一頂面並與該第二子層之間形成至少一該氣室。如此,該第一模壓層透過該第一、第二子層分別緊密地附著於該基板和該晶片。Preferably, the first molded layer has a first sublayer and a second sublayer covering the first sublayer, the first sublayer covers the top surface of the substrate and surrounds the periphery of the chip, the second sublayer has a step, a bottom surface of the step is fixed to the top surface of the chip, and the step is penetrated by the through hole; the second molded layer covers a top surface of the second sublayer and forms at least one air chamber between the second sublayer. In this way, the first molded layer is closely attached to the substrate and the chip through the first and second sublayers.

較佳地,該第二子層之該階部具有一鄰接於該底面的內牆面,該內牆面和該第二模壓層之一底面圍繞形成至少一該氣室。Preferably, the step of the second sub-layer has an inner wall surface adjacent to the bottom surface, and the inner wall surface and a bottom surface of the second molded layer surround and form at least one air chamber.

較佳地,各該電連接件之該外端分別設有一焊墊,該等焊墊用於電性連接至一外部裝置(例如印刷電路板)。Preferably, the outer end of each of the electrical connectors is provided with a solder pad, and the solder pads are used to electrically connect to an external device (such as a printed circuit board).

本發明之另一目的在於提供一種保護晶片功能區的氣室的製造方法,其能減少額外的加工程序且有利於大量製造。Another object of the present invention is to provide a method for manufacturing an air chamber for protecting a functional area of a chip, which can reduce additional processing steps and is conducive to mass production.

本發明之保護晶片功能區的氣室的製造方法包含有下列步驟:a)將複數晶片間隔固定於一基板,各該晶片具有至少一位於其頂面的晶片功能區,以及複數位於該頂面且位於各該晶片功能區之周緣的電性接點;b)形成一第一模壓層,該第一模壓層覆蓋於該基板之一頂面且圍繞於各該晶片之周緣,該第一模壓層具有由微影製程形成的複數空腔及複數通孔,該等空腔分別對應各該晶片功能區,該等通孔分別對應各該電性接點;c)將複數電連接件分別插設於各該通孔;d)形成一第二模壓層,該第二模壓層覆蓋於該第一模壓層之一頂面及各該電連接件,該第一、第二模壓層共同形成一封裝體,該封裝體具有複數分別對應各該晶片功能區的氣室;e)平坦化該封裝體之一頂面,使各該電連接件具有一外露於該封裝體之外的外端;f)於該封裝體之該頂面形成複數個焊墊,該等焊墊分別電性連接各該電連接件該外端;以及g)裁切該基板和該封裝體,藉以形成複數個晶片封裝結構。The manufacturing method of the air chamber for protecting the chip functional area of the present invention comprises the following steps: a) fixing a plurality of chips at intervals on a substrate, each of the chips having at least one chip functional area on its top surface, and a plurality of electrical contacts located on the top surface and around the periphery of each chip functional area; b) forming a first molding layer, the first molding layer covering a top surface of the substrate and surrounding the periphery of each chip, the first molding layer having a plurality of cavities and a plurality of through holes formed by a lithography process, the cavities corresponding to each chip functional area respectively, and the through holes corresponding to each electrical contact respectively; c) fixing a plurality of electrical contacts on the top surface of the substrate, and the plurality of electrical contacts on the top surface of the substrate; The electrical connectors are inserted into each of the through holes; d) forming a second mold layer, the second mold layer covers a top surface of the first mold layer and each of the electrical connectors, the first and second mold layers together form a package body, the package body has a plurality of air chambers corresponding to the functional areas of each chip; e) flattening a top surface of the package body so that each of the electrical connectors has an outer end exposed outside the package body; f) forming a plurality of solder pads on the top surface of the package body, the solder pads are electrically connected to the outer ends of each of the electrical connectors; and g) cutting the substrate and the package body to form a plurality of chip packaging structures.

藉由上述技術特徵,本發明之製造方法透過該第一、第二模壓層共同形成該封裝體,使得該封裝體不須透過額外加工的方式來形成該等氣室和該等通孔,而且本發明之製造方法還能大量製造本發明之晶片封裝結構,連帶降低了本發明之晶片封裝結構的製造成本。Through the above-mentioned technical features, the manufacturing method of the present invention forms the package body through the first and second molding layers together, so that the package body does not need to be formed through additional processing to form the air chambers and the through holes. In addition, the manufacturing method of the present invention can also mass-produce the chip packaging structure of the present invention, thereby reducing the manufacturing cost of the chip packaging structure of the present invention.

較佳地,在該步驟f)與該步驟g)之間,更包含有一平坦化該基板之一底面,以減少該基板的厚度的步驟。Preferably, between step f) and step g), there is further included a step of planarizing a bottom surface of the substrate to reduce the thickness of the substrate.

較佳地,在該步驟b)中,該第一模壓層具有一第一子層及一覆蓋於該第一子層的第二子層;該第一子層覆蓋於該基板之該頂面且圍繞於各該晶片之周緣,該第二子層具有複數階部,各該階部之一底面固定於各該晶片之該頂面,且各該階部被所述通孔所貫穿;該第二模壓層覆蓋於該第二子層之一頂面。如此,該第一模壓層透過該第一、第二子層分別緊密地附著於該基板和該晶片。Preferably, in step b), the first molded layer has a first sublayer and a second sublayer covering the first sublayer; the first sublayer covers the top surface of the substrate and surrounds the periphery of each chip, the second sublayer has a plurality of steps, a bottom surface of each step is fixed to the top surface of each chip, and each step is penetrated by the through hole; the second molded layer covers a top surface of the second sublayer. In this way, the first molded layer is closely attached to the substrate and the chip through the first and second sublayers.

較佳地,在該步驟b)中,該第二子層之各該階部具有一鄰接於該底面的內牆面,各該內牆面圍繞形成各該空腔。如此,透過調整該第二子層的厚度,即可改變該等空腔的大小。Preferably, in step b), each step of the second sublayer has an inner wall surface adjacent to the bottom surface, and each inner wall surface surrounds and forms each cavity. Thus, the size of the cavities can be changed by adjusting the thickness of the second sublayer.

較佳地,在該步驟d)中,該第二模壓層覆蓋於該第二子層之一頂面並與該第二子層之各該內牆面共同形成各該氣室。Preferably, in step d), the second molded layer covers a top surface of the second sub-layer and forms each of the air chambers together with each of the inner wall surfaces of the second sub-layer.

有關本發明所提供之晶片封裝結構及保護晶片功能區的氣室的製造方法的詳細構造、步驟和特點,將於後續的實施方式中詳細說明。然而,在本領域中具有通常知識者應能瞭解,該等詳細說明以及實施本發明所列舉的特定實施例,僅係用於說明本發明,並非用以限制本發明之專利申請範圍。The detailed structure, steps and features of the chip packaging structure and the manufacturing method of the gas chamber for protecting the chip functional area provided by the present invention will be described in detail in the subsequent implementation methods. However, those with ordinary knowledge in the field should understand that the detailed description and the specific embodiments listed for implementing the present invention are only used to illustrate the present invention and are not used to limit the scope of the patent application of the present invention.

首先要說明的是,本發明所提供的技術特徵不限於實施方式所描述的特定結構、用途以及其應用。說明內容使用的用語皆為所屬技術領域中具有通常知識者所能理解的例示性描述用語,本說明書所提及的「前、上、下、後、左、右、頂、底、內,以及外」等方向性行形容用語,也只是以正常使用方向為基準的例示性描述用語,並非作為限制主張範圍的用意。First of all, it should be noted that the technical features provided by the present invention are not limited to the specific structures, uses and applications described in the embodiments. The terms used in the description are all exemplary descriptive terms that can be understood by ordinary knowledgeable people in the relevant technical fields. The directional descriptive terms such as "front, top, bottom, back, left, right, top, bottom, inside, and outside" mentioned in this manual are only exemplary descriptive terms based on the normal use direction and are not intended to limit the scope of the claims.

請先參閱圖1,本發明之晶片封裝結構1包含有一基板10、一晶片20、一封裝體30、複數電連接件40,以及複數焊墊50。Please refer to FIG. 1 . The chip package structure 1 of the present invention includes a substrate 10 , a chip 20 , a package body 30 , a plurality of electrical connectors 40 , and a plurality of bonding pads 50 .

基板10為一體成形的板狀結構,其具有一頂面11及一相對頂面11的底面12,在本實施例中,基板10的材料可為以下多種材料中的一種,例如聚酰亞胺薄膜(例如Kapton®、Upilex®)、聚醚酰亞胺(例如Ultem®)、聚四氟乙烯(polytetrafluoroethylene,簡稱PTFE)、聚碸材料(例如Udel®、Radel®),或是另一種聚合物膜,例如液晶聚合物(liquid crystal polymer,簡稱LCP)。The substrate 10 is an integrally formed plate-like structure having a top surface 11 and a bottom surface 12 opposite to the top surface 11. In the present embodiment, the material of the substrate 10 may be one of the following materials, such as a polyimide film (e.g., Kapton®, Upilex®), polyetherimide (e.g., Ultem®), polytetrafluoroethylene (PTFE for short), a polysulfone material (e.g., Udel®, Radel®), or another polymer film, such as a liquid crystal polymer (LCP for short).

晶片20可為(但不限於)表面聲波(Surface acoustic wave,簡稱SAW)濾波器、體聲波(Bulk acoustic wave,簡稱BAW)濾波器,或是SAW諧振器的RF濾波器,以及微機電的傳感器類等,在本實施例中,晶片20以SAW濾波器為例。晶片20具有一頂面21、一位於頂面21的晶片功能區22(圖1中的晶片功能區22為一個,但實際上不以一個為限),以及複數位於頂面21的電性接點23,該等電性接點23位於晶片功能區22之周緣,且該等電性接點23皆為焊墊。其中的晶片功能區22為交叉指狀轉換器(Interdigital Transducer,簡稱IDT),IDT用於將輸入的電訊號與聲波相互轉換,由於IDT為習用SAW濾波器之元件,故在此容不贅述。The chip 20 may be (but not limited to) a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, or an RF filter of a SAW resonator, as well as a micro-electromechanical sensor, etc. In this embodiment, the chip 20 is an example of a SAW filter. The chip 20 has a top surface 21, a chip functional area 22 on the top surface 21 (the chip functional area 22 in FIG. 1 is one, but is not limited to one in practice), and a plurality of electrical contacts 23 on the top surface 21. The electrical contacts 23 are located around the chip functional area 22, and the electrical contacts 23 are all solder pads. The chip functional area 22 is an interdigital transducer (IDT), which is used to convert input electrical signals into sound waves. Since IDT is a commonly used SAW filter component, it will not be described in detail here.

封裝體30的材料可為(但不限於)聚合物材料或環氧樹脂。封裝體30具有一第一模壓層37,第一模壓層37具有一第一子層371及一覆蓋於第一子層371之第二子層372,第一子層371覆蓋於基板10之頂面11並圍繞於晶片20之周緣,以保護晶片20的結構不受損壞,第二子層372具有一階部34,階部34具有一底面35與一鄰接底面35之內牆面36,第二子層372以階部34之底面35固定於晶片20之頂面21,第二子層372還具有複數貫穿階部34之通孔H,該等通孔H分別對應晶片20之各電性接點23。封裝體30還具有一第二模壓層38,第二模壓層38覆蓋於第二子層372之頂面373並與第二子層372之內牆面36之間形成一氣室C,由於氣室C容置晶片之晶片功能區,所以氣室C的數量依據晶片功能區22的數量而定(圖1中的氣室C為一個,但實際上不以一個為限)。The material of the package body 30 may be (but not limited to) a polymer material or an epoxy resin. The package body 30 has a first mold layer 37, and the first mold layer 37 has a first sublayer 371 and a second sublayer 372 covering the first sublayer 371. The first sublayer 371 covers the top surface 11 of the substrate 10 and surrounds the periphery of the chip 20 to protect the structure of the chip 20 from damage. The second sublayer 372 has a There is a step 34, the step 34 has a bottom surface 35 and an inner wall surface 36 adjacent to the bottom surface 35, the second sublayer 372 is fixed to the top surface 21 of the chip 20 with the bottom surface 35 of the step 34, and the second sublayer 372 also has a plurality of through holes H penetrating the step 34, and the through holes H correspond to each electrical contact 23 of the chip 20 respectively. The package body 30 also has a second molded layer 38, which covers the top surface 373 of the second sub-layer 372 and forms an air chamber C between the second molded layer 38 and the inner wall surface 36 of the second sub-layer 372. Since the air chamber C accommodates the chip functional area of the chip, the number of air chambers C depends on the number of chip functional areas 22 (there is one air chamber C in Figure 1, but it is not limited to one in practice).

該等電連接件40在本實施例中皆為金屬件(例如銅柱),該等電連接件40分別設置於封裝體30之各通孔H。各電連接件40具有一電性連接晶片20之各電性接點23的內端41,以及一外露於封裝體30之外的外端42。In this embodiment, the electrical connectors 40 are all metal parts (such as copper pillars), and the electrical connectors 40 are respectively disposed in each through hole H of the package body 30. Each electrical connector 40 has an inner end 41 electrically connected to each electrical contact 23 of the chip 20, and an outer end 42 exposed outside the package body 30.

各個焊墊50分別設於各電連接件40之外端42,用於電性連接至一外部裝置(例如印刷電路板)。Each solder pad 50 is disposed on the outer end 42 of each electrical connector 40 for electrically connecting to an external device (eg, a printed circuit board).

以上為本發明之晶片封裝結構1的結構特徵,以下將進一步說明保護晶片功能區的氣室的製造方法,如圖2所示,本發明之製造方法包含有下列步驟:The above are the structural features of the chip package structure 1 of the present invention. The manufacturing method of the air chamber for protecting the chip functional area will be further described below. As shown in FIG. 2 , the manufacturing method of the present invention includes the following steps:

如圖2和圖3所示之步驟S1,將複數晶片20間隔固定於基板10,各晶片20具有至少一位於其頂面21的晶片功能區22,以及複數位於頂面21且位於各晶片功能區22之周緣的電性接點23。在此步驟中,於基板10之頂面11塗佈一層黏合劑(圖中未示),然後將複數晶片20(在本實施例中為四個,可依據實際製造數量更改)間隔地黏附於基板10之頂面11作固定。As shown in step S1 of FIG. 2 and FIG. 3 , a plurality of chips 20 are fixed to the substrate 10 at intervals, and each chip 20 has at least one chip functional region 22 located on its top surface 21, and a plurality of electrical contacts 23 located on the top surface 21 and at the periphery of each chip functional region 22. In this step, a layer of adhesive (not shown) is applied to the top surface 11 of the substrate 10, and then a plurality of chips 20 (four in this embodiment, which can be changed according to the actual manufacturing quantity) are adhered to the top surface 11 of the substrate 10 at intervals for fixing.

如圖2和圖4所示之步驟S2,形成一第一模壓層37,第一模壓層37覆蓋於基板10之頂面11且圍繞於各晶片20之周緣,第一模壓層37具有由微影製程形成的複數空腔O與複數通孔H,該等空腔O分別對應各晶片功能區22,該等通孔H分別對應各電性接點23。As shown in step S2 of FIG. 2 and FIG. 4 , a first molding layer 37 is formed. The first molding layer 37 covers the top surface 11 of the substrate 10 and surrounds the periphery of each chip 20. The first molding layer 37 has a plurality of cavities O and a plurality of through holes H formed by a lithography process. The cavities O correspond to each chip functional area 22, respectively, and the through holes H correspond to each electrical contact 23, respectively.

在此步驟中,需使用一模具(圖中未示)將一封裝材料(例如聚合物材料或環氧樹脂)加熱至熔融態,然後將熔融態的材料模壓成型而形成呈凝膠狀的第一模壓層37。第一模壓層37具有一第一子層371及一覆蓋於第一子層371的第二子層372,第一子層371覆蓋於基板10之頂面11並圍繞於晶片20之周緣,第二子層372具有一階部34,階部34具有一底面35與一鄰接底面35之內牆面36,階部34之底面35固定於晶片20之頂面21,階部34之內牆面36圍繞形成一開放的空腔O,各空腔O分別對應各晶片20之晶片功能區22,藉由調整第二子層372的厚度即可調整各空腔O的大小。此外,第二子層372還具有複數貫穿階部34之通孔H,該等通孔H分別對應晶片20之各電性接點23。在此需補充說明的是,第二子層372透過微影製程能一次性地形成該等空腔O與該等通孔H,所以能大幅減少加工時間,而微影製程為半導體製程中常見的程序,故在此不再贅述。In this step, a mold (not shown) is used to heat the packaging material (such as polymer material or epoxy resin) to a molten state, and then the molten material is molded to form a first molded layer 37 in a gel state. The first molding layer 37 has a first sublayer 371 and a second sublayer 372 covering the first sublayer 371. The first sublayer 371 covers the top surface 11 of the substrate 10 and surrounds the periphery of the chip 20. The second sublayer 372 has a step 34. The step 34 has a bottom surface 35 and an inner wall surface 36 adjacent to the bottom surface 35. The bottom surface 35 of the step 34 is fixed to the top surface 21 of the chip 20. The inner wall surface 36 of the step 34 surrounds to form an open cavity O. Each cavity O corresponds to the chip functional area 22 of each chip 20. The size of each cavity O can be adjusted by adjusting the thickness of the second sublayer 372. In addition, the second sub-layer 372 also has a plurality of through holes H penetrating the step 34, and the through holes H respectively correspond to the electrical contacts 23 of the chip 20. It should be noted that the second sub-layer 372 can form the cavities O and the through holes H at one time through a lithography process, so the processing time can be greatly reduced. The lithography process is a common procedure in semiconductor manufacturing, so it will not be described here.

如圖2和圖5所示之步驟S3,將複數電連接件40分別插設於各通孔H,使各電連接件40之內端41分別電性連接於各電性接點23。As shown in step S3 of FIG. 2 and FIG. 5 , a plurality of electrical connectors 40 are respectively inserted into each through hole H, so that the inner end 41 of each electrical connector 40 is respectively electrically connected to each electrical contact 23 .

如圖2和圖6所示之步驟S4,形成一第二模壓層38,第二模壓層38覆蓋於第一模壓層37之一頂面373及各電連接件40,第一、第二模壓層37、38共同形成一封裝體30,封裝體30具有複數分別對應各晶片功能區22的氣室C。As shown in step S4 of FIG. 2 and FIG. 6 , a second mold layer 38 is formed, and the second mold layer 38 covers a top surface 373 of the first mold layer 37 and each electrical connector 40. The first and second mold layers 37 and 38 together form a package body 30, and the package body 30 has a plurality of air chambers C corresponding to each chip functional area 22.

在此步驟中,需使用另一模具(圖中未示)將一與第一模壓層37相同之封裝材料(例如聚合物材料或環氧樹脂)加熱至熔融態,然後將熔融態的材料模壓成型而形成呈凝膠狀的第二模壓層38,第二模壓層38具有一頂面381及一相對頂面381的底面382,第二模壓層38以底面382覆蓋於第二子層372之頂面373(即為第一模壓層37之頂面373)及各電連接件40,使得第二模壓層38之底面382和第二子層372之各內牆面36之間圍繞形成一呈封閉狀的氣室C(如圖6所示)。In this step, another mold (not shown) is used to heat a packaging material (such as a polymer material or epoxy resin) that is the same as the first mold layer 37 to a molten state, and then the molten material is molded to form a second mold layer 38 in a gel state. The second mold layer 38 has a top surface 381 and a bottom surface opposite to the top surface 381. The second molded layer 38 covers the top surface 373 of the second sub-layer 372 (i.e., the top surface 373 of the first molded layer 37) and each electrical connector 40 with the bottom surface 382, so that a closed air chamber C is formed between the bottom surface 382 of the second molded layer 38 and each inner wall surface 36 of the second sub-layer 372 (as shown in FIG. 6).

如圖2和圖7所示之步驟S5,平坦化封裝體30之頂面381,使各電連接件40具有一外露於封裝體30之外的外端42。在此步驟中,利用一研磨機(圖中未示)研磨並移除封裝體30之頂面381(即為第二模壓層38之頂面381)多餘的材料,讓封裝體30之頂面381保持平坦的狀態,直到各電連接件40之外端42外露於封裝體30之外。As shown in step S5 of FIG. 2 and FIG. 7 , the top surface 381 of the package body 30 is flattened so that each electrical connector 40 has an outer end 42 exposed outside the package body 30. In this step, a grinder (not shown) is used to grind and remove excess material from the top surface 381 of the package body 30 (i.e., the top surface 381 of the second molding layer 38), so that the top surface 381 of the package body 30 remains flat until the outer end 42 of each electrical connector 40 is exposed outside the package body 30.

如圖2和圖8所示之步驟S6,於封裝體30之頂面381形成複數個焊墊50,該等焊墊50分別電性連接各電連接件40之外端42。在此步驟中,該等焊墊50可為(但不限於)錫焊凸塊。As shown in step S6 of FIG. 2 and FIG. 8 , a plurality of solder pads 50 are formed on the top surface 381 of the package body 30, and the solder pads 50 are respectively electrically connected to the outer ends 42 of the electrical connectors 40. In this step, the solder pads 50 may be (but not limited to) solder bumps.

如圖2和圖9所示之步驟S7,平坦化基板10之底面12,以減少基板10的厚度。在此步驟中,同樣利用研磨機研磨並去除基板10之底面12多餘的材料,讓基板10之底面12保持平坦的狀態。As shown in step S7 of FIG. 2 and FIG. 9 , the bottom surface 12 of the substrate 10 is planarized to reduce the thickness of the substrate 10. In this step, a grinder is also used to grind and remove excess material from the bottom surface 12 of the substrate 10, so that the bottom surface 12 of the substrate 10 remains flat.

如圖2和圖10所示之步驟S8,裁切基板10和封裝體30,藉以形成複數個晶片封裝結構1,如此即完成整個加工步驟。As shown in step S8 of FIG. 2 and FIG. 10 , the substrate 10 and the package body 30 are cut to form a plurality of chip package structures 1 , thus completing the entire processing steps.

綜上所陳,本發明之製造方法藉由第一、第二模壓層37、38共同形成封裝體30,讓封裝體30不須透過額外的加工程序(例如雷射燒蝕、雷射鑽孔、電漿蝕刻、光刻或機械鑽孔等),即可形成該等氣室C和該等通孔H,讓整體加工步驟較為簡單且容易達成,並且讓本發明之晶片封裝結構1具有較低的加工成本。而且,由於本發明之製造方法能大量製造本發明之晶片封裝結構1,所以連帶降低了本發明之晶片封裝結構1的製造成本。In summary, the manufacturing method of the present invention forms the package body 30 by the first and second mold layers 37 and 38 together, so that the package body 30 does not need to go through additional processing procedures (such as laser ablation, laser drilling, plasma etching, photolithography or mechanical drilling, etc.) to form the air chambers C and the through holes H, so that the overall processing steps are simpler and easier to achieve, and the chip package structure 1 of the present invention has a lower processing cost. In addition, since the manufacturing method of the present invention can mass-produce the chip package structure 1 of the present invention, the manufacturing cost of the chip package structure 1 of the present invention is reduced.

1:晶片封裝結構1: Chip packaging structure

10:基板10: Substrate

11:頂面11: Top

12:底面12: Bottom

20:晶片20: Chip

21:頂面21: Top

22:晶片功能區22: Chip functional area

23:電性接點23: Electrical contacts

30:封裝體30: Package

34:階部34: Class

35:底面35: Bottom

36:內牆面36: Inner wall

37:第一模壓層37: First molding layer

371:第一子層371: First sublayer

372:第二子層372: Second sublayer

373:頂面373: Top

38:第二模壓層38: Second molding layer

381:頂面381: Top

382:底面382: Bottom

40:電連接件40: Electrical connector

41:內端41: Inner

42:外端42: Outer end

50:焊墊50:Welding pad

C:氣室C: Air chamber

H:通孔H:Through hole

S1-S8:步驟S1-S8: Steps

O:空腔O: Cavity

以下茲以實施例配合圖式,對本發明所提供之晶片封裝結構及保護晶片功能區的氣室的製造方法做進一步之說明,其中: 圖1為本發明之晶片封裝結構的剖視圖; 圖2為本發明之保護晶片功能區的氣室的製造方法的流程圖; 圖3為一剖視圖,顯示複數晶片間隔固定於基板; 圖4接續圖3,顯示形成一覆蓋於基板的第一模壓層; 圖5接續圖4,顯示複數電連接件分別插設於各通孔; 圖6接續圖5,顯示形成一覆蓋於第一模壓層及各電連接件的第二模壓層; 圖7接續圖6,顯示平坦化封裝體之一頂面,使各電連接件具有一外露於封裝體之外的外端; 圖8接續圖7,顯示於封裝體之頂面形成複數個焊墊; 圖9接續圖8,顯示平坦化基板之底面以減少基板的厚度;以及 圖10接續圖9,顯示裁切基板和封裝體以形成複數個晶片封裝結構。 The following is a further description of the chip packaging structure and the manufacturing method of the air chamber for protecting the chip functional area provided by the present invention with the help of an embodiment and drawings, wherein: FIG. 1 is a cross-sectional view of the chip packaging structure of the present invention; FIG. 2 is a flow chart of the manufacturing method of the air chamber for protecting the chip functional area of the present invention; FIG. 3 is a cross-sectional view showing that a plurality of chips are fixed to a substrate at intervals; FIG. 4 is a continuation of FIG. 3, showing the formation of a first molded layer covering the substrate; FIG. 5 is a continuation of FIG. 4, showing that a plurality of electrical connectors are respectively inserted into each through hole; FIG. 6 is a continuation of FIG. 5, showing the formation of a second molded layer covering the first molded layer and each electrical connector; FIG. 7 is a continuation of FIG. 6, showing a top surface of a package body being flattened so that each electrical connector has an outer end exposed outside the package body; FIG. 8 is a continuation of FIG. 7, showing a plurality of solder pads formed on the top surface of the package body; FIG. 9 is a continuation of FIG. 8, showing a bottom surface of a substrate being flattened to reduce the thickness of the substrate; and FIG. 10 is a continuation of FIG. 9, showing a substrate and a package body being cut to form a plurality of chip package structures.

1:晶片封裝結構 1: Chip packaging structure

10:基板 10: Substrate

11:頂面 11: Top

12:底面 12: Bottom

20:晶片 20: Chip

21:頂面 21: Top

22:晶片功能區 22: Chip functional area

23:電性接點 23: Electrical contacts

30:封裝體 30:Package

34:階部 34: Class

35:底面 35: Bottom

36:內牆面 36: Inner wall

37:第一模壓層 37: First molding layer

371:第一子層 371: First sublayer

372:第二子層 372: Second sublayer

373:頂面 373: Top

38:第二模壓層 38: Second molding layer

40:電連接件 40: Electrical connectors

41:內端 41: Inner end

42:外端 42: Outer end

50:焊墊 50: Solder pad

C:氣室 C: Air chamber

H:通孔 H:Through hole

Claims (9)

一種晶片封裝結構,包含有:一基板,具有一頂面;一晶片,固定於該基板之該頂面,該晶片具有一頂面、至少一位於該頂面的晶片功能區,以及複數位於該頂面的電性接點,且該等電性接點位於至少一該晶片功能區之周緣;一封裝體,固定於該基板之該頂面且圍繞包覆該晶片,該封裝體具有至少一氣室及複數通孔,至少一該氣室容置該晶片之至少一該晶片功能區,該等通孔分別對應各該電性接點;以及複數電連接件,分別設置於該封裝體之各該通孔,且各該電連接件具有一電性連接各該電性接點的內端,以及一外露於該封裝體之外的外端;其中該封裝體具有一第一模壓層和一第二模壓層,該第一模壓層覆蓋於該基板之該頂面並圍繞於該晶片之周緣,且該第一模壓層具有複數所述通孔,該第二模壓層覆蓋於該第一模壓層之一頂面及各該電連接件,並與該第一模壓層之間形成至少一該氣室。 A chip packaging structure includes: a substrate having a top surface; a chip fixed to the top surface of the substrate, the chip having a top surface, at least one chip functional area located on the top surface, and a plurality of electrical contacts located on the top surface, and the electrical contacts are located around at least one chip functional area; a packaging body fixed to the top surface of the substrate and surrounding and covering the chip, the packaging body having at least one air chamber and a plurality of through holes, at least one of the air chambers accommodating at least one chip functional area of the chip, and the through holes respectively corresponding to each of the electrical contacts ; and a plurality of electrical connectors, respectively disposed in each of the through holes of the package body, and each of the electrical connectors has an inner end electrically connected to each of the electrical contacts, and an outer end exposed outside the package body; wherein the package body has a first molded layer and a second molded layer, the first molded layer covers the top surface of the substrate and surrounds the periphery of the chip, and the first molded layer has a plurality of the through holes, the second molded layer covers a top surface of the first molded layer and each of the electrical connectors, and forms at least one of the air chambers between the second molded layer and the first molded layer. 如請求項1所述的晶片封裝結構,其中該第一模壓層具有一第一子層及一覆蓋於該第一子層的第二子層,該第一子層覆蓋於該基板之該頂面並圍繞於該晶片之周緣,該第二子層具有一階部與複數所述通孔,該階部之一底面固定於該晶片之該頂面且被複數所述通孔貫穿;該第二模壓層覆蓋於該第二子層之一頂面並與該第二子層之間形成至少一該氣室。 The chip packaging structure as described in claim 1, wherein the first molded layer has a first sublayer and a second sublayer covering the first sublayer, the first sublayer covers the top surface of the substrate and surrounds the periphery of the chip, the second sublayer has a step and a plurality of through holes, a bottom surface of the step is fixed to the top surface of the chip and is penetrated by a plurality of through holes; the second molded layer covers a top surface of the second sublayer and forms at least one air chamber between the second sublayer and the second sublayer. 如請求項2所述的晶片封裝結構,其中該第二子層之該階部具有一鄰接於該底面的內牆面,該內牆面和該第二模壓層之一底面圍繞形成至少一該氣室。 The chip packaging structure as described in claim 2, wherein the step of the second sub-layer has an inner wall surface adjacent to the bottom surface, and the inner wall surface and a bottom surface of the second molded layer surround and form at least one of the air chambers. 如請求項1所述的晶片封裝結構,其中各該電連接件之該外端分別設有一焊墊。 A chip package structure as described in claim 1, wherein each of the outer ends of the electrical connector is provided with a solder pad. 一種保護晶片功能區的氣室的製造方法,包含有下列步驟:a)將複數晶片間隔固定於一基板,各該晶片具有至少一位於其頂面的晶片功能區,以及複數位於該頂面且位於各該晶片功能區之周緣的電性接點;b)形成一第一模壓層,該第一模壓層覆蓋於該基板之一頂面且圍繞於各該晶片之周緣,該第一模壓層具有由微影製程形成的複數空腔與複數通孔,該等空腔分別對應各該晶片功能區,該等通孔分別對應各該電性接點;c)將複數電連接件分別插設於各該通孔;d)形成一第二模壓層,該第二模壓層覆蓋於該第一模壓層之一頂面及各該電連接件,該第一、第二模壓層共同形成一封裝體,該封裝體具有複數分別對應各該晶片功能區的氣室;e)平坦化該封裝體之該頂面,使各該電連接件具有一外露於該封裝體之外的外端;f)於該封裝體之該頂面形成複數個焊墊,該等焊墊分別電性連接各該電連接件之該外端;以及g)裁切該基板和該封裝體,藉以形成複數個晶片封裝結構。 A method for manufacturing an air chamber for protecting a chip functional area comprises the following steps: a) fixing a plurality of chips at intervals on a substrate, each of the chips having at least one chip functional area on its top surface, and a plurality of electrical contacts located on the top surface and around each chip functional area; b) forming a first mold layer, the first mold layer covering a top surface of the substrate and surrounding each chip, the first mold layer having a plurality of cavities and a plurality of through holes formed by a lithography process, the cavities corresponding to each chip functional area, and the through holes corresponding to each electrical contact; c) connecting a plurality of electrical connectors to the substrate; d) forming a second molded layer, the second molded layer covers a top surface of the first molded layer and each of the electrical connectors, the first and second molded layers together form a package body, the package body has a plurality of air chambers corresponding to each of the chip functional areas; e) flattening the top surface of the package body so that each of the electrical connectors has an outer end exposed outside the package body; f) forming a plurality of solder pads on the top surface of the package body, the solder pads are electrically connected to the outer ends of each of the electrical connectors; and g) cutting the substrate and the package body to form a plurality of chip package structures. 如請求項5所述的製造方法,其中在該步驟f)與該步驟g)之間,更包含有一平坦化該基板之一底面,以減少該基板的厚度的步驟。 The manufacturing method as described in claim 5, wherein between step f) and step g), there is further included a step of flattening a bottom surface of the substrate to reduce the thickness of the substrate. 如請求項5所述的製造方法,其中在該步驟b)中,該第一模壓層具有一第一子層及一覆蓋於該第一子層的第二子層;該第一子層覆蓋於該基板之該頂面且圍繞於各該晶片之周緣,該第二子層具有複數階部與複數所述通孔,各該階部之一底面固定於各該晶片之該頂面且被複數所述通孔貫穿;該第二模壓層覆蓋於該第二子層之一頂面。 The manufacturing method as described in claim 5, wherein in step b), the first molded layer has a first sublayer and a second sublayer covering the first sublayer; the first sublayer covers the top surface of the substrate and surrounds the periphery of each of the chips, the second sublayer has a plurality of steps and a plurality of through holes, a bottom surface of each of the steps is fixed to the top surface of each of the chips and penetrated by a plurality of through holes; the second molded layer covers a top surface of the second sublayer. 如請求項7所述的製造方法,其中在該步驟b)中,該第二子層之各該階部具有一鄰接於該底面的內牆面,各該內牆面圍繞形成各該空腔。 The manufacturing method as described in claim 7, wherein in the step b), each step of the second sublayer has an inner wall surface adjacent to the bottom surface, and each inner wall surface surrounds and forms each cavity. 如請求項8所述的製造方法,其中在該步驟b)中,該第二子層之各該內牆面和該第二模壓層之一底面圍繞形成各該氣室。A manufacturing method as described in claim 8, wherein in the step b), each inner wall surface of the second sub-layer and a bottom surface of the second molded layer surround and form each air chamber.
TW112140832A 2023-10-25 2023-10-25 Chip packaging structure and method for manufacturing air chamber for protecting chip functional area TWI876621B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI517311B (en) * 2011-12-15 2016-01-11 英特爾股份有限公司 Packaged semiconductor die with bumpless die package interface for bumpless build-up (BBUL) packages
TW202211211A (en) * 2020-09-08 2022-03-16 阿比特電子科技股份有限公司 Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same
TWI859155B (en) * 2018-08-31 2024-10-21 日商索尼半導體解決方案公司 Semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI517311B (en) * 2011-12-15 2016-01-11 英特爾股份有限公司 Packaged semiconductor die with bumpless die package interface for bumpless build-up (BBUL) packages
TWI859155B (en) * 2018-08-31 2024-10-21 日商索尼半導體解決方案公司 Semiconductor devices
TW202211211A (en) * 2020-09-08 2022-03-16 阿比特電子科技股份有限公司 Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same

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