TWI876621B - Chip packaging structure and method for manufacturing air chamber for protecting chip functional area - Google Patents
Chip packaging structure and method for manufacturing air chamber for protecting chip functional area Download PDFInfo
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- H—ELECTRICITY
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
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- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
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Abstract
本發明之晶片封裝結構包含有一基板、一固定於基板的晶片、一封裝體及複數電連接件。晶片具有至少一晶片功能區及複數位於晶片功能區之周緣的電性接點;封裝體固定於基板且圍繞包覆晶片,封裝體具有至少一容置各晶片功能區的氣室,以及複數分別對應各電性接點的通孔;該等電連接件分別設置於封裝體之各通孔,且各電連接件具有一電性連接各電性接點的內端,以及一外露於封裝體之外的外端。藉此,本發明之晶片封裝結構的加工成本較低。另外,本發明更提供一種保護晶片功能區的氣室的製造方法,其能減少額外的加工程序且有利於大量製造。The chip packaging structure of the present invention includes a substrate, a chip fixed to the substrate, a packaging body and a plurality of electrical connectors. The chip has at least one chip functional area and a plurality of electrical contacts located around the chip functional area; the packaging body is fixed to the substrate and surrounds and covers the chip, and the packaging body has at least one air chamber for accommodating each chip functional area, and a plurality of through holes corresponding to each electrical contact; the electrical connectors are respectively arranged in each through hole of the packaging body, and each electrical connector has an inner end electrically connected to each electrical contact, and an outer end exposed outside the packaging body. Thereby, the processing cost of the chip packaging structure of the present invention is relatively low. In addition, the present invention further provides a method for manufacturing an air chamber for protecting the chip functional area, which can reduce additional processing procedures and is conducive to mass production.
Description
本發明係與諸如表面聲波(Surface acoustic wave,簡稱SAW)濾波器、體聲波(Bulk acoustic wave,簡稱BAW)濾波器, SAW諧振器的RF濾波器,以及微機電的傳感器類的封裝有關,特別是一種晶片封裝結構,以及一種保護晶片功能區的氣室的製造方法。The present invention relates to packaging of surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, RF filters of SAW resonators, and micro-electromechanical sensors, and in particular to a chip packaging structure and a method for manufacturing an air chamber for protecting a chip functional area.
台灣公告第I720239號專利案揭露一種嵌入式射頻濾波器封裝結構及其製造方法。請參閱前述專利案中的圖4(以下標號引用自前述專利案),濾波器封裝結構10包含有一第一電介質層18、一設於第一電介質層18上方的SAW濾波器14、一黏合於SAW濾波器14和第一電介質層18之間的黏合劑24、一包覆SAW濾波器14的電介質封裝材料20、複數個分別穿設於第一電介質層18和黏合劑24的通孔26,以及複數個分別設於各通孔26中的金屬互連28。其中,SAW濾波器14具有一主動區域34,且SAW濾波器14以主動區域34朝下的方式黏附於黏合劑24,使主動區域34容置於黏合劑24之一空氣腔32,致使SAW濾波器14之主動區域34和壓電基板(請參閱前述專利案中的圖1)產生適當的振動和相關聯的聲波。Taiwan Patent Publication No. I720239 discloses an embedded RF filter package structure and a manufacturing method thereof. Referring to FIG. 4 of the aforementioned patent (the following reference numbers are quoted from the aforementioned patent), the
然而,前述濾波器封裝結構10在製造時,黏合劑24需透過雷射燒蝕或選擇性施加於電介質層18(例如噴墨式)的方式來形成空氣腔32,而第一電介質層18和黏附層24需透過雷射燒蝕、雷射鑽孔、電漿蝕刻、光刻或機械鑽孔等逐洞加工程序來形成該等通孔26,從而造成其製造方法較為繁複,並連帶提高加工成本。因此,前述專利案中的濾波器封裝結構10及其製造方法仍有改進的空間。However, when manufacturing the
有鑑於上述缺失,本發明之主要目的在於提供一種晶片封裝結構,其加工成本較低。In view of the above shortcomings, the main purpose of the present invention is to provide a chip packaging structure with low processing cost.
為達上述主要目的,本發明之晶片封裝結構包含有一基板、一晶片、一封裝體,以及複數電連接件。該基板具有一頂面;該晶片固定於該基板之該頂面,該晶片具有一頂面、至少一位於該頂面的晶片功能區,以及複數位於該頂面的電性接點,且該等電性接點位於至少一該晶片功能區之周緣;該封裝體固定於該基板之該頂面且圍繞包覆該晶片,該封裝體具有至少一氣室及複數通孔,至少一該氣室容置該晶片之至少一該晶片功能區,該等通孔分別對應各該電性接點;複數電連接件分別設置於該封裝體之各該通孔,且各該電連接件具有一電性連接各該電性接點的內端,以及一外露於該封裝體之外的外端。To achieve the above main purpose, the chip package structure of the present invention includes a substrate, a chip, a package body, and a plurality of electrical connectors. The substrate has a top surface; the chip is fixed to the top surface of the substrate, the chip has a top surface, at least one chip functional area located on the top surface, and a plurality of electrical contacts located on the top surface, and the electrical contacts are located around at least one chip functional area; the package body is fixed to the top surface of the substrate and surrounds and covers the chip, the package body has at least one air chamber and a plurality of through holes, at least one of the air chambers accommodates at least one chip functional area of the chip, and the through holes correspond to each of the electrical contacts respectively; a plurality of electrical connectors are respectively arranged in each of the through holes of the package body, and each of the electrical connectors has an inner end electrically connected to each of the electrical contacts, and an outer end exposed outside the package body.
藉由上述技術特徵,由於本發明之晶片封裝結構所提供之該封裝體不須透過額外加工程序(例如雷射燒蝕、雷射鑽孔、電漿蝕刻、光刻或機械鑽孔)來逐洞形成至少一該氣室和該等通孔,所以本發明之晶片封裝結構的加工成本較低。By virtue of the above technical features, since the package body provided by the chip package structure of the present invention does not need to be processed through additional processing procedures (such as laser ablation, laser drilling, plasma etching, photolithography or mechanical drilling) to form at least one of the air chambers and the through holes one by one, the processing cost of the chip package structure of the present invention is relatively low.
較佳地,該封裝體具有一第一模壓層和一第二模壓層,該第一模壓層覆蓋於該基板之該頂面並圍繞於該晶片之周緣,且該第一模壓層具有複數所述通孔,該第二模壓層覆蓋於該第一模壓層之一頂面及各該電連接件,並與該第一模壓層之間形成至少一該氣室。如此,透過該第一、第二模壓層而共同形成該封裝體,使得該封裝體不須透過額外加工的方式來形成該等氣室和該等通孔。Preferably, the package has a first mold layer and a second mold layer, the first mold layer covers the top surface of the substrate and surrounds the periphery of the chip, and the first mold layer has a plurality of through holes, the second mold layer covers a top surface of the first mold layer and each of the electrical connectors, and forms at least one air chamber between the second mold layer and the first mold layer. In this way, the package is formed by the first and second mold layers, so that the package does not need to be formed by additional processing to form the air chambers and the through holes.
較佳地,該第一模壓層具有一第一子層及一覆蓋於該第一子層的第二子層,該第一子層覆蓋於該基板之該頂面並圍繞於該晶片之周緣,該第二子層具有一階部,該階部之一底面固定於該晶片之該頂面,且該階部被所述通孔貫穿;該第二模壓層覆蓋於該第二子層之一頂面並與該第二子層之間形成至少一該氣室。如此,該第一模壓層透過該第一、第二子層分別緊密地附著於該基板和該晶片。Preferably, the first molded layer has a first sublayer and a second sublayer covering the first sublayer, the first sublayer covers the top surface of the substrate and surrounds the periphery of the chip, the second sublayer has a step, a bottom surface of the step is fixed to the top surface of the chip, and the step is penetrated by the through hole; the second molded layer covers a top surface of the second sublayer and forms at least one air chamber between the second sublayer. In this way, the first molded layer is closely attached to the substrate and the chip through the first and second sublayers.
較佳地,該第二子層之該階部具有一鄰接於該底面的內牆面,該內牆面和該第二模壓層之一底面圍繞形成至少一該氣室。Preferably, the step of the second sub-layer has an inner wall surface adjacent to the bottom surface, and the inner wall surface and a bottom surface of the second molded layer surround and form at least one air chamber.
較佳地,各該電連接件之該外端分別設有一焊墊,該等焊墊用於電性連接至一外部裝置(例如印刷電路板)。Preferably, the outer end of each of the electrical connectors is provided with a solder pad, and the solder pads are used to electrically connect to an external device (such as a printed circuit board).
本發明之另一目的在於提供一種保護晶片功能區的氣室的製造方法,其能減少額外的加工程序且有利於大量製造。Another object of the present invention is to provide a method for manufacturing an air chamber for protecting a functional area of a chip, which can reduce additional processing steps and is conducive to mass production.
本發明之保護晶片功能區的氣室的製造方法包含有下列步驟:a)將複數晶片間隔固定於一基板,各該晶片具有至少一位於其頂面的晶片功能區,以及複數位於該頂面且位於各該晶片功能區之周緣的電性接點;b)形成一第一模壓層,該第一模壓層覆蓋於該基板之一頂面且圍繞於各該晶片之周緣,該第一模壓層具有由微影製程形成的複數空腔及複數通孔,該等空腔分別對應各該晶片功能區,該等通孔分別對應各該電性接點;c)將複數電連接件分別插設於各該通孔;d)形成一第二模壓層,該第二模壓層覆蓋於該第一模壓層之一頂面及各該電連接件,該第一、第二模壓層共同形成一封裝體,該封裝體具有複數分別對應各該晶片功能區的氣室;e)平坦化該封裝體之一頂面,使各該電連接件具有一外露於該封裝體之外的外端;f)於該封裝體之該頂面形成複數個焊墊,該等焊墊分別電性連接各該電連接件該外端;以及g)裁切該基板和該封裝體,藉以形成複數個晶片封裝結構。The manufacturing method of the air chamber for protecting the chip functional area of the present invention comprises the following steps: a) fixing a plurality of chips at intervals on a substrate, each of the chips having at least one chip functional area on its top surface, and a plurality of electrical contacts located on the top surface and around the periphery of each chip functional area; b) forming a first molding layer, the first molding layer covering a top surface of the substrate and surrounding the periphery of each chip, the first molding layer having a plurality of cavities and a plurality of through holes formed by a lithography process, the cavities corresponding to each chip functional area respectively, and the through holes corresponding to each electrical contact respectively; c) fixing a plurality of electrical contacts on the top surface of the substrate, and the plurality of electrical contacts on the top surface of the substrate; The electrical connectors are inserted into each of the through holes; d) forming a second mold layer, the second mold layer covers a top surface of the first mold layer and each of the electrical connectors, the first and second mold layers together form a package body, the package body has a plurality of air chambers corresponding to the functional areas of each chip; e) flattening a top surface of the package body so that each of the electrical connectors has an outer end exposed outside the package body; f) forming a plurality of solder pads on the top surface of the package body, the solder pads are electrically connected to the outer ends of each of the electrical connectors; and g) cutting the substrate and the package body to form a plurality of chip packaging structures.
藉由上述技術特徵,本發明之製造方法透過該第一、第二模壓層共同形成該封裝體,使得該封裝體不須透過額外加工的方式來形成該等氣室和該等通孔,而且本發明之製造方法還能大量製造本發明之晶片封裝結構,連帶降低了本發明之晶片封裝結構的製造成本。Through the above-mentioned technical features, the manufacturing method of the present invention forms the package body through the first and second molding layers together, so that the package body does not need to be formed through additional processing to form the air chambers and the through holes. In addition, the manufacturing method of the present invention can also mass-produce the chip packaging structure of the present invention, thereby reducing the manufacturing cost of the chip packaging structure of the present invention.
較佳地,在該步驟f)與該步驟g)之間,更包含有一平坦化該基板之一底面,以減少該基板的厚度的步驟。Preferably, between step f) and step g), there is further included a step of planarizing a bottom surface of the substrate to reduce the thickness of the substrate.
較佳地,在該步驟b)中,該第一模壓層具有一第一子層及一覆蓋於該第一子層的第二子層;該第一子層覆蓋於該基板之該頂面且圍繞於各該晶片之周緣,該第二子層具有複數階部,各該階部之一底面固定於各該晶片之該頂面,且各該階部被所述通孔所貫穿;該第二模壓層覆蓋於該第二子層之一頂面。如此,該第一模壓層透過該第一、第二子層分別緊密地附著於該基板和該晶片。Preferably, in step b), the first molded layer has a first sublayer and a second sublayer covering the first sublayer; the first sublayer covers the top surface of the substrate and surrounds the periphery of each chip, the second sublayer has a plurality of steps, a bottom surface of each step is fixed to the top surface of each chip, and each step is penetrated by the through hole; the second molded layer covers a top surface of the second sublayer. In this way, the first molded layer is closely attached to the substrate and the chip through the first and second sublayers.
較佳地,在該步驟b)中,該第二子層之各該階部具有一鄰接於該底面的內牆面,各該內牆面圍繞形成各該空腔。如此,透過調整該第二子層的厚度,即可改變該等空腔的大小。Preferably, in step b), each step of the second sublayer has an inner wall surface adjacent to the bottom surface, and each inner wall surface surrounds and forms each cavity. Thus, the size of the cavities can be changed by adjusting the thickness of the second sublayer.
較佳地,在該步驟d)中,該第二模壓層覆蓋於該第二子層之一頂面並與該第二子層之各該內牆面共同形成各該氣室。Preferably, in step d), the second molded layer covers a top surface of the second sub-layer and forms each of the air chambers together with each of the inner wall surfaces of the second sub-layer.
有關本發明所提供之晶片封裝結構及保護晶片功能區的氣室的製造方法的詳細構造、步驟和特點,將於後續的實施方式中詳細說明。然而,在本領域中具有通常知識者應能瞭解,該等詳細說明以及實施本發明所列舉的特定實施例,僅係用於說明本發明,並非用以限制本發明之專利申請範圍。The detailed structure, steps and features of the chip packaging structure and the manufacturing method of the gas chamber for protecting the chip functional area provided by the present invention will be described in detail in the subsequent implementation methods. However, those with ordinary knowledge in the field should understand that the detailed description and the specific embodiments listed for implementing the present invention are only used to illustrate the present invention and are not used to limit the scope of the patent application of the present invention.
首先要說明的是,本發明所提供的技術特徵不限於實施方式所描述的特定結構、用途以及其應用。說明內容使用的用語皆為所屬技術領域中具有通常知識者所能理解的例示性描述用語,本說明書所提及的「前、上、下、後、左、右、頂、底、內,以及外」等方向性行形容用語,也只是以正常使用方向為基準的例示性描述用語,並非作為限制主張範圍的用意。First of all, it should be noted that the technical features provided by the present invention are not limited to the specific structures, uses and applications described in the embodiments. The terms used in the description are all exemplary descriptive terms that can be understood by ordinary knowledgeable people in the relevant technical fields. The directional descriptive terms such as "front, top, bottom, back, left, right, top, bottom, inside, and outside" mentioned in this manual are only exemplary descriptive terms based on the normal use direction and are not intended to limit the scope of the claims.
請先參閱圖1,本發明之晶片封裝結構1包含有一基板10、一晶片20、一封裝體30、複數電連接件40,以及複數焊墊50。Please refer to FIG. 1 . The
基板10為一體成形的板狀結構,其具有一頂面11及一相對頂面11的底面12,在本實施例中,基板10的材料可為以下多種材料中的一種,例如聚酰亞胺薄膜(例如Kapton®、Upilex®)、聚醚酰亞胺(例如Ultem®)、聚四氟乙烯(polytetrafluoroethylene,簡稱PTFE)、聚碸材料(例如Udel®、Radel®),或是另一種聚合物膜,例如液晶聚合物(liquid crystal polymer,簡稱LCP)。The
晶片20可為(但不限於)表面聲波(Surface acoustic wave,簡稱SAW)濾波器、體聲波(Bulk acoustic wave,簡稱BAW)濾波器,或是SAW諧振器的RF濾波器,以及微機電的傳感器類等,在本實施例中,晶片20以SAW濾波器為例。晶片20具有一頂面21、一位於頂面21的晶片功能區22(圖1中的晶片功能區22為一個,但實際上不以一個為限),以及複數位於頂面21的電性接點23,該等電性接點23位於晶片功能區22之周緣,且該等電性接點23皆為焊墊。其中的晶片功能區22為交叉指狀轉換器(Interdigital Transducer,簡稱IDT),IDT用於將輸入的電訊號與聲波相互轉換,由於IDT為習用SAW濾波器之元件,故在此容不贅述。The
封裝體30的材料可為(但不限於)聚合物材料或環氧樹脂。封裝體30具有一第一模壓層37,第一模壓層37具有一第一子層371及一覆蓋於第一子層371之第二子層372,第一子層371覆蓋於基板10之頂面11並圍繞於晶片20之周緣,以保護晶片20的結構不受損壞,第二子層372具有一階部34,階部34具有一底面35與一鄰接底面35之內牆面36,第二子層372以階部34之底面35固定於晶片20之頂面21,第二子層372還具有複數貫穿階部34之通孔H,該等通孔H分別對應晶片20之各電性接點23。封裝體30還具有一第二模壓層38,第二模壓層38覆蓋於第二子層372之頂面373並與第二子層372之內牆面36之間形成一氣室C,由於氣室C容置晶片之晶片功能區,所以氣室C的數量依據晶片功能區22的數量而定(圖1中的氣室C為一個,但實際上不以一個為限)。The material of the
該等電連接件40在本實施例中皆為金屬件(例如銅柱),該等電連接件40分別設置於封裝體30之各通孔H。各電連接件40具有一電性連接晶片20之各電性接點23的內端41,以及一外露於封裝體30之外的外端42。In this embodiment, the
各個焊墊50分別設於各電連接件40之外端42,用於電性連接至一外部裝置(例如印刷電路板)。Each
以上為本發明之晶片封裝結構1的結構特徵,以下將進一步說明保護晶片功能區的氣室的製造方法,如圖2所示,本發明之製造方法包含有下列步驟:The above are the structural features of the
如圖2和圖3所示之步驟S1,將複數晶片20間隔固定於基板10,各晶片20具有至少一位於其頂面21的晶片功能區22,以及複數位於頂面21且位於各晶片功能區22之周緣的電性接點23。在此步驟中,於基板10之頂面11塗佈一層黏合劑(圖中未示),然後將複數晶片20(在本實施例中為四個,可依據實際製造數量更改)間隔地黏附於基板10之頂面11作固定。As shown in step S1 of FIG. 2 and FIG. 3 , a plurality of
如圖2和圖4所示之步驟S2,形成一第一模壓層37,第一模壓層37覆蓋於基板10之頂面11且圍繞於各晶片20之周緣,第一模壓層37具有由微影製程形成的複數空腔O與複數通孔H,該等空腔O分別對應各晶片功能區22,該等通孔H分別對應各電性接點23。As shown in step S2 of FIG. 2 and FIG. 4 , a
在此步驟中,需使用一模具(圖中未示)將一封裝材料(例如聚合物材料或環氧樹脂)加熱至熔融態,然後將熔融態的材料模壓成型而形成呈凝膠狀的第一模壓層37。第一模壓層37具有一第一子層371及一覆蓋於第一子層371的第二子層372,第一子層371覆蓋於基板10之頂面11並圍繞於晶片20之周緣,第二子層372具有一階部34,階部34具有一底面35與一鄰接底面35之內牆面36,階部34之底面35固定於晶片20之頂面21,階部34之內牆面36圍繞形成一開放的空腔O,各空腔O分別對應各晶片20之晶片功能區22,藉由調整第二子層372的厚度即可調整各空腔O的大小。此外,第二子層372還具有複數貫穿階部34之通孔H,該等通孔H分別對應晶片20之各電性接點23。在此需補充說明的是,第二子層372透過微影製程能一次性地形成該等空腔O與該等通孔H,所以能大幅減少加工時間,而微影製程為半導體製程中常見的程序,故在此不再贅述。In this step, a mold (not shown) is used to heat the packaging material (such as polymer material or epoxy resin) to a molten state, and then the molten material is molded to form a first molded
如圖2和圖5所示之步驟S3,將複數電連接件40分別插設於各通孔H,使各電連接件40之內端41分別電性連接於各電性接點23。As shown in step S3 of FIG. 2 and FIG. 5 , a plurality of
如圖2和圖6所示之步驟S4,形成一第二模壓層38,第二模壓層38覆蓋於第一模壓層37之一頂面373及各電連接件40,第一、第二模壓層37、38共同形成一封裝體30,封裝體30具有複數分別對應各晶片功能區22的氣室C。As shown in step S4 of FIG. 2 and FIG. 6 , a
在此步驟中,需使用另一模具(圖中未示)將一與第一模壓層37相同之封裝材料(例如聚合物材料或環氧樹脂)加熱至熔融態,然後將熔融態的材料模壓成型而形成呈凝膠狀的第二模壓層38,第二模壓層38具有一頂面381及一相對頂面381的底面382,第二模壓層38以底面382覆蓋於第二子層372之頂面373(即為第一模壓層37之頂面373)及各電連接件40,使得第二模壓層38之底面382和第二子層372之各內牆面36之間圍繞形成一呈封閉狀的氣室C(如圖6所示)。In this step, another mold (not shown) is used to heat a packaging material (such as a polymer material or epoxy resin) that is the same as the
如圖2和圖7所示之步驟S5,平坦化封裝體30之頂面381,使各電連接件40具有一外露於封裝體30之外的外端42。在此步驟中,利用一研磨機(圖中未示)研磨並移除封裝體30之頂面381(即為第二模壓層38之頂面381)多餘的材料,讓封裝體30之頂面381保持平坦的狀態,直到各電連接件40之外端42外露於封裝體30之外。As shown in step S5 of FIG. 2 and FIG. 7 , the
如圖2和圖8所示之步驟S6,於封裝體30之頂面381形成複數個焊墊50,該等焊墊50分別電性連接各電連接件40之外端42。在此步驟中,該等焊墊50可為(但不限於)錫焊凸塊。As shown in step S6 of FIG. 2 and FIG. 8 , a plurality of
如圖2和圖9所示之步驟S7,平坦化基板10之底面12,以減少基板10的厚度。在此步驟中,同樣利用研磨機研磨並去除基板10之底面12多餘的材料,讓基板10之底面12保持平坦的狀態。As shown in step S7 of FIG. 2 and FIG. 9 , the
如圖2和圖10所示之步驟S8,裁切基板10和封裝體30,藉以形成複數個晶片封裝結構1,如此即完成整個加工步驟。As shown in step S8 of FIG. 2 and FIG. 10 , the
綜上所陳,本發明之製造方法藉由第一、第二模壓層37、38共同形成封裝體30,讓封裝體30不須透過額外的加工程序(例如雷射燒蝕、雷射鑽孔、電漿蝕刻、光刻或機械鑽孔等),即可形成該等氣室C和該等通孔H,讓整體加工步驟較為簡單且容易達成,並且讓本發明之晶片封裝結構1具有較低的加工成本。而且,由於本發明之製造方法能大量製造本發明之晶片封裝結構1,所以連帶降低了本發明之晶片封裝結構1的製造成本。In summary, the manufacturing method of the present invention forms the
1:晶片封裝結構1: Chip packaging structure
10:基板10: Substrate
11:頂面11: Top
12:底面12: Bottom
20:晶片20: Chip
21:頂面21: Top
22:晶片功能區22: Chip functional area
23:電性接點23: Electrical contacts
30:封裝體30: Package
34:階部34: Class
35:底面35: Bottom
36:內牆面36: Inner wall
37:第一模壓層37: First molding layer
371:第一子層371: First sublayer
372:第二子層372: Second sublayer
373:頂面373: Top
38:第二模壓層38: Second molding layer
381:頂面381: Top
382:底面382: Bottom
40:電連接件40: Electrical connector
41:內端41: Inner
42:外端42: Outer end
50:焊墊50:Welding pad
C:氣室C: Air chamber
H:通孔H:Through hole
S1-S8:步驟S1-S8: Steps
O:空腔O: Cavity
以下茲以實施例配合圖式,對本發明所提供之晶片封裝結構及保護晶片功能區的氣室的製造方法做進一步之說明,其中: 圖1為本發明之晶片封裝結構的剖視圖; 圖2為本發明之保護晶片功能區的氣室的製造方法的流程圖; 圖3為一剖視圖,顯示複數晶片間隔固定於基板; 圖4接續圖3,顯示形成一覆蓋於基板的第一模壓層; 圖5接續圖4,顯示複數電連接件分別插設於各通孔; 圖6接續圖5,顯示形成一覆蓋於第一模壓層及各電連接件的第二模壓層; 圖7接續圖6,顯示平坦化封裝體之一頂面,使各電連接件具有一外露於封裝體之外的外端; 圖8接續圖7,顯示於封裝體之頂面形成複數個焊墊; 圖9接續圖8,顯示平坦化基板之底面以減少基板的厚度;以及 圖10接續圖9,顯示裁切基板和封裝體以形成複數個晶片封裝結構。 The following is a further description of the chip packaging structure and the manufacturing method of the air chamber for protecting the chip functional area provided by the present invention with the help of an embodiment and drawings, wherein: FIG. 1 is a cross-sectional view of the chip packaging structure of the present invention; FIG. 2 is a flow chart of the manufacturing method of the air chamber for protecting the chip functional area of the present invention; FIG. 3 is a cross-sectional view showing that a plurality of chips are fixed to a substrate at intervals; FIG. 4 is a continuation of FIG. 3, showing the formation of a first molded layer covering the substrate; FIG. 5 is a continuation of FIG. 4, showing that a plurality of electrical connectors are respectively inserted into each through hole; FIG. 6 is a continuation of FIG. 5, showing the formation of a second molded layer covering the first molded layer and each electrical connector; FIG. 7 is a continuation of FIG. 6, showing a top surface of a package body being flattened so that each electrical connector has an outer end exposed outside the package body; FIG. 8 is a continuation of FIG. 7, showing a plurality of solder pads formed on the top surface of the package body; FIG. 9 is a continuation of FIG. 8, showing a bottom surface of a substrate being flattened to reduce the thickness of the substrate; and FIG. 10 is a continuation of FIG. 9, showing a substrate and a package body being cut to form a plurality of chip package structures.
1:晶片封裝結構 1: Chip packaging structure
10:基板 10: Substrate
11:頂面 11: Top
12:底面 12: Bottom
20:晶片 20: Chip
21:頂面 21: Top
22:晶片功能區 22: Chip functional area
23:電性接點 23: Electrical contacts
30:封裝體 30:Package
34:階部 34: Class
35:底面 35: Bottom
36:內牆面 36: Inner wall
37:第一模壓層 37: First molding layer
371:第一子層 371: First sublayer
372:第二子層 372: Second sublayer
373:頂面 373: Top
38:第二模壓層 38: Second molding layer
40:電連接件 40: Electrical connectors
41:內端 41: Inner end
42:外端 42: Outer end
50:焊墊 50: Solder pad
C:氣室 C: Air chamber
H:通孔 H:Through hole
Claims (9)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112140832A TWI876621B (en) | 2023-10-25 | 2023-10-25 | Chip packaging structure and method for manufacturing air chamber for protecting chip functional area |
| CN202311575166.1A CN119890151A (en) | 2023-10-25 | 2023-11-23 | Chip packaging structure and manufacturing method of air chamber for protecting chip functional area |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112140832A TWI876621B (en) | 2023-10-25 | 2023-10-25 | Chip packaging structure and method for manufacturing air chamber for protecting chip functional area |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI876621B true TWI876621B (en) | 2025-03-11 |
| TW202518693A TW202518693A (en) | 2025-05-01 |
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|---|---|
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| TW (1) | TWI876621B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI517311B (en) * | 2011-12-15 | 2016-01-11 | 英特爾股份有限公司 | Packaged semiconductor die with bumpless die package interface for bumpless build-up (BBUL) packages |
| TW202211211A (en) * | 2020-09-08 | 2022-03-16 | 阿比特電子科技股份有限公司 | Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same |
| TWI859155B (en) * | 2018-08-31 | 2024-10-21 | 日商索尼半導體解決方案公司 | Semiconductor devices |
-
2023
- 2023-10-25 TW TW112140832A patent/TWI876621B/en active
- 2023-11-23 CN CN202311575166.1A patent/CN119890151A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI517311B (en) * | 2011-12-15 | 2016-01-11 | 英特爾股份有限公司 | Packaged semiconductor die with bumpless die package interface for bumpless build-up (BBUL) packages |
| TWI859155B (en) * | 2018-08-31 | 2024-10-21 | 日商索尼半導體解決方案公司 | Semiconductor devices |
| TW202211211A (en) * | 2020-09-08 | 2022-03-16 | 阿比特電子科技股份有限公司 | Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same |
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| Publication number | Publication date |
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| CN119890151A (en) | 2025-04-25 |
| TW202518693A (en) | 2025-05-01 |
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