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TWI876682B - Carbon dioxide laser cutting method - Google Patents

Carbon dioxide laser cutting method Download PDF

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Publication number
TWI876682B
TWI876682B TW112144573A TW112144573A TWI876682B TW I876682 B TWI876682 B TW I876682B TW 112144573 A TW112144573 A TW 112144573A TW 112144573 A TW112144573 A TW 112144573A TW I876682 B TWI876682 B TW I876682B
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Taiwan
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carbon dioxide
metal frame
dioxide laser
laser cutting
cutting method
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TW112144573A
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Chinese (zh)
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TW202519343A (en
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蔡漢龍
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大陸商業成光電(深圳)有限公司
大陸商業成科技(成都)有限公司
英特盛科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60Preliminary treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)

Abstract

A carbon dioxide laser cutting method includes the following steps: providing a flexible substrate that has a plurality of dicing lanes set on a surface and a plurality of wafers divided by the dicing lanes; forming an outer metal frame and an inner metal frame around the wafer, wherein the outer metal frame is arranged along one side of the dicing lane away from the wafer, the inner metal frame is arranged along one side of the dicing lane near to the wafer, thereby a gap is formed between the outer metal frame and the inner metal frame to expose part of each dicing lane; and irradiating by a carbon dioxide laser beam along the dicing lanes exposed from the gap, so that the flexible substrate is divided into a plurality of independent wafers along the gap. The invention utilizes the carbon dioxide laser with the wavelength that is less absorbed by the metal surface so that the laser could only act on the gap between the two metal frames to improve the cutting accuracy of the wafer.

Description

二氧化碳雷射切割方法CO2 Laser Cutting Method

本發明有關於雷射切割的技術領域,特別是指一種可提高切割精度的二氧化碳雷射切割方法。The present invention relates to the technical field of laser cutting, and in particular to a carbon dioxide laser cutting method capable of improving cutting accuracy.

近年來,軟性電子技術及產品應用已發展為科技研發主流,也帶動相關製程的持續創新。由於軟性電子是將元件或材料建置在軟性基板上的技術,屬於複雜的多層結構,傳統的機械式切割製程,軟性基板易受機械力集中而造成定位誤差或面板變形,如此容易影響面板與元件的整體特性。此外,現代軟性電子產品強調輕薄短小及可撓曲的趨勢下,製程精度的要求亦隨之嚴苛,導致產品良率的確保也受到嚴厲的考驗。In recent years, flexible electronic technology and product applications have developed into the mainstream of scientific and technological research and development, and have also driven the continuous innovation of related processes. Since flexible electronics is a technology that builds components or materials on a flexible substrate, it is a complex multi-layer structure. In the traditional mechanical cutting process, the flexible substrate is easily affected by the concentration of mechanical forces, resulting in positioning errors or panel deformation, which can easily affect the overall characteristics of the panel and components. In addition, modern flexible electronic products emphasize the trend of being thin, short, and flexible, and the requirements for process accuracy are also strict, resulting in the guarantee of product yield being severely tested.

相較於傳統機械式切割製程,雷射切割製程具有非接觸式加工、高加工精度、低加工成本與高加工效率的加工優勢,將成為未來產業的發展趨勢。其中,二氧化碳雷射切割製程在軟性基板的切割品質上明顯優於傳統機械式切割製程,可做為軟性基板切割的解決方案之一。然而,現有的二氧化碳雷射切割精度仍有改善的空間。請參照第1A圖和第1B圖。第1A圖為設定切割後的晶片圖面之示意圖,第1B圖為因二氧化碳雷射切割精度不良導致切成大小不一致的晶片外形之示意圖。在二氧化碳雷射切割過程中,作用於切割道12的雷射能量所產生的高溫會造成鄰近切割道12旁邊的基板10邊緣發生熔融現象,而影響切割精度,使得切割後的晶片20外形變得大小不一致,如第1B圖中晶片20作動區至邊緣的距離d1、d2、d3和d4皆不同,如此將影響後續的貼合製程,導致產品良率降低。Compared with the traditional mechanical cutting process, the laser cutting process has the advantages of non-contact processing, high processing accuracy, low processing cost and high processing efficiency, and will become the development trend of the industry in the future. Among them, the carbon dioxide laser cutting process is significantly better than the traditional mechanical cutting process in the cutting quality of soft substrates, and can be used as one of the solutions for cutting soft substrates. However, the existing carbon dioxide laser cutting accuracy still has room for improvement. Please refer to Figure 1A and Figure 1B. Figure 1A is a schematic diagram of the chip image after setting the cutting, and Figure 1B is a schematic diagram of the chip shape cut into inconsistent sizes due to poor carbon dioxide laser cutting accuracy. During the CO2 laser cutting process, the high temperature generated by the laser energy acting on the cutting path 12 will cause the edge of the substrate 10 adjacent to the cutting path 12 to melt, thereby affecting the cutting accuracy and causing the size of the chip 20 to become inconsistent after cutting. For example, the distances d1, d2, d3 and d4 from the active area to the edge of the chip 20 in FIG. 1B are all different, which will affect the subsequent bonding process and reduce the product yield.

是以,要如何對於二氧化碳雷射切割方法進行改良,來解決上述先前技術之各種缺失,即為從事此行業相關業者所亟欲研發的課題。Therefore, how to improve the carbon dioxide laser cutting method to solve the various deficiencies of the above-mentioned previous technologies has become a topic that the relevant industry players are eager to research and develop.

有鑑於此,本發明的主要目的在於提供一種二氧化碳雷射切割方法,藉由金屬表面較不會吸收二氧化碳雷射波長的特性,於切割道內外兩側設置兩金屬框,並於兩金屬框之間夾有一間隙,使得雷射可以僅作用於兩金屬框之間隙內,藉以有效提升晶片的切割精度,進而達到提升製程良率的目的。In view of this, the main purpose of the present invention is to provide a carbon dioxide laser cutting method. By taking advantage of the fact that the metal surface is less likely to absorb the wavelength of the carbon dioxide laser, two metal frames are set on the inner and outer sides of the cutting path, and a gap is sandwiched between the two metal frames, so that the laser can only act in the gap between the two metal frames, thereby effectively improving the cutting accuracy of the chip and further achieving the purpose of improving the process yield.

為達上述之目的,本發明提供一種二氧化碳雷射切割方法,其步驟包含: (1) 提供一軟性基板,此軟性基板具有設定在表面的複數切割道及藉由這些切割道所區劃的複數晶片; (2) 在各個晶片周圍形成一外部金屬框和一內部金屬框,其中外部金屬框沿著切割道遠離各個晶片的一側設置,內部金屬框沿著切割道靠近各個晶片的一側設置,且外部金屬框和內部金屬框之間夾有將每一切割道部分暴露出來的間隙;以及 (3) 利用二氧化碳雷射光束沿著暴露於間隙的切割道進行照射,而將軟性基板沿著間隙分割成獨立的多個晶片。 To achieve the above-mentioned purpose, the present invention provides a carbon dioxide laser cutting method, the steps of which include: (1) providing a flexible substrate, the flexible substrate having a plurality of cutting paths set on the surface and a plurality of chips divided by the cutting paths; (2) forming an outer metal frame and an inner metal frame around each chip, wherein the outer metal frame is arranged along a side of the cutting path away from each chip, and the inner metal frame is arranged along a side of the cutting path close to each chip, and a gap is sandwiched between the outer metal frame and the inner metal frame to expose a portion of each cutting path; and (3) using a carbon dioxide laser beam to irradiate along the cutting path exposed to the gap, thereby dividing the flexible substrate into multiple independent chips along the gap.

根據本發明之實施例,前述外部金屬框和內部金屬框的材料為鋁(Al)、銀(Ag)或金(Au)。According to an embodiment of the present invention, the material of the outer metal frame and the inner metal frame is aluminum (Al), silver (Ag) or gold (Au).

根據本發明之實施例,前述間隙寬度大於或等於二氧化碳雷射光束的波長。According to an embodiment of the present invention, the width of the gap is greater than or equal to the wavelength of the CO2 laser beam.

根據本發明之實施例,前述二氧化碳雷射光束的波長在9.2至9.7微米之間或10.2至10.7微米之間的範圍。According to an embodiment of the present invention, the wavelength of the carbon dioxide laser beam is in the range of 9.2 to 9.7 microns or 10.2 to 10.7 microns.

根據本發明之實施例,前述二氧化碳雷射切割方法滿足下列條件: 其中,LW為內部金屬框的線寬; 為雷射切割設備精度; S為間隙寬度。 According to the embodiment of the present invention, the aforementioned carbon dioxide laser cutting method meets the following conditions: Wherein, LW is the line width of the internal metal frame; is the accuracy of laser cutting equipment; S is the gap width.

根據本發明之實施例,前述 為50至200微米。 According to an embodiment of the present invention, the aforementioned 50 to 200 microns.

根據本發明之實施例,前述各個晶片表面包含一作動區及包圍作動區之一邊框區,外部金屬框設置於切割道並沿著邊框區的外側延伸,內部金屬框設置於邊框區並沿著切割道的內側延伸。According to an embodiment of the present invention, each of the aforementioned chip surfaces includes an active area and a frame area surrounding the active area, an outer metal frame is arranged on the cutting path and extends along the outer side of the frame area, and an inner metal frame is arranged on the frame area and extends along the inner side of the cutting path.

根據本發明之實施例,前述二氧化碳雷射切割方法在步驟(2)中,更包含於作動區和邊框區分別形成一感應電極層和一金屬線路層,金屬線路層電性連接感應電極層。According to an embodiment of the present invention, the aforementioned carbon dioxide laser cutting method further includes, in step (2), forming a sensing electrode layer and a metal circuit layer in the active area and the frame area respectively, wherein the metal circuit layer is electrically connected to the sensing electrode layer.

根據本發明之實施例,前述二氧化碳雷射切割方法在步驟(2)中,更包含於邊框區形成複數連接墊,這些連接墊電性連接金屬線路層和感應電極層。According to an embodiment of the present invention, the aforementioned carbon dioxide laser cutting method further includes forming a plurality of connection pads in the frame area in step (2), wherein the connection pads electrically connect the metal circuit layer and the sensing electrode layer.

根據本發明之實施例,前述二氧化碳雷射切割方法在步驟(2)中,更包含於邊框區形成複數接地墊,這些接地墊電性連接內部金屬框,使內部金屬框作為接地線。According to an embodiment of the present invention, the aforementioned carbon dioxide laser cutting method further includes forming a plurality of ground pads in the frame area in step (2), wherein the ground pads are electrically connected to the inner metal frame so that the inner metal frame serves as a ground wire.

根據本發明之實施例,前述軟性基板的組成材料包括聚乙烯對苯二甲酸酯(PET)、聚丙烯(PP) 、聚亞醯胺(PI)、聚醯胺(PA)、聚甲基丙烯酸甲脂(PMMA)、聚碳酸酯(PC)、聚醚碸(PES)、聚原冰烯(PNB)、聚醚醚酮(PEEK)、聚萘二甲酸乙二醇酯(PEN)、環烯烴聚合物(COP)或環烯烴共聚物(COC)。According to an embodiment of the present invention, the component material of the aforementioned flexible substrate includes polyethylene terephthalate (PET), polypropylene (PP), polyimide (PI), polyamide (PA), polymethyl methacrylate (PMMA), polycarbonate (PC), polyether sulphate (PES), polyprotoethylene (PNB), polyether ether ketone (PEEK), polyethylene naphthalate (PEN), cycloolefin polymer (COP) or cycloolefin copolymer (COC).

與先前技術相比,本發明具有以下優勢: (1) 本發明突破現有二氧化碳雷射切割製程於基板造成邊緣熔融的現象,進而影響切割精度,並導致產品性能及製程良率降低的問題。 (2) 本發明藉由在切割道內外兩側設置兩金屬框,並利用兩金屬框之間的間隙限縮二氧化碳雷射光束的作用範圍,可以突破雷射切割設備本身的精度限制,達到具有高切割精度的能力,從而提升整體良率和產能。 Compared with the prior art, the present invention has the following advantages: (1) The present invention overcomes the problem that the existing carbon dioxide laser cutting process causes edge melting of the substrate, thereby affecting the cutting accuracy and causing a decrease in product performance and process yield. (2) The present invention can break through the accuracy limitation of the laser cutting equipment itself by setting two metal frames on the inner and outer sides of the cutting path and using the gap between the two metal frames to limit the range of action of the carbon dioxide laser beam, thereby achieving the ability to have high cutting accuracy, thereby improving the overall yield and production capacity.

以上所述僅能用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等,本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。The above description is only used to illustrate the problems to be solved by the present invention, the technical means for solving the problems, and the effects produced, etc. The specific details of the present invention will be introduced in detail in the following implementation methods and related drawings.

本發明的實施例將藉由下文配合相關圖式進一步加以解說。盡可能的,於圖式與說明書中,相同標號係代表相同或相似構件。於圖式中,基於簡化與方便標示,形狀與厚度可能經過誇大表示,而有些細節可能未完全繪出,以求圖式之簡潔。可以理解的是,未特別顯示於圖式中或描述於說明書中之元件,為所屬技術領域中具有通常知識者所知之形態。本領域中具有通常知識者可依據本發明之內容而進行多種之改變與修改。The embodiments of the present invention will be further explained below in conjunction with the relevant drawings. As much as possible, the same reference numerals in the drawings and the specification represent the same or similar components. In the drawings, shapes and thicknesses may be exaggerated for simplicity and convenience, and some details may not be fully drawn to simplify the drawings. It is understood that the components not specifically shown in the drawings or described in the specification are in the form known to those with ordinary knowledge in the relevant technical field. Those with ordinary knowledge in this field can make various changes and modifications based on the content of the present invention.

本發明中的實施例所採用的技術方案用於更加清楚地說明本發明的技術方案,因此只作為示例,除非特別說明,不應用以限制本發明的保護範圍。在說明書的描述中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而,本發明可能在省略部分或全部特定細節的前提下,仍可實施。此外,眾所周知的步驟或元件並未描述於細節中,以避免對本發明形成不必要之限制。在不衝突的情況下,本發明中的實施例及實施例中的特徵可以相互任意組合。需要注意的是,除非特別說明,本發明使用的所有技術和科學術語具有與本發明所屬領域中具有通常知識者通常理解的相同含義。The technical solutions adopted in the embodiments of the present invention are used to more clearly illustrate the technical solutions of the present invention, and are therefore only used as examples. Unless otherwise specified, they should not be used to limit the scope of protection of the present invention. In the description of the specification, many specific details are provided in order to enable readers to have a more complete understanding of the present invention; however, the present invention may still be implemented on the premise of omitting some or all of the specific details. In addition, well-known steps or components are not described in the details to avoid unnecessary restrictions on the present invention. In the absence of conflict, the embodiments of the present invention and the features in the embodiments can be arbitrarily combined with each other. It should be noted that, unless otherwise specified, all technical and scientific terms used in the present invention have the same meaning as those commonly understood by those with ordinary knowledge in the field to which the present invention belongs.

正如先前技術所描述的,目前習知的二氧化碳雷射切割方法會於基板造成邊緣熔融現象,使得切割精度不佳,進而導致產品性能及製程良率降低的問題。為了解決上述技術問題,本發明的基本思想是提供一種二氧化碳雷射切割方法,透過在切割道內外兩側設置兩金屬框,並利用兩金屬框之間的間隙限縮二氧化碳雷射光束的作用範圍,可以突破雷射切割設備本身的精度限制,達到具有高切割精度的能力,從而提升整體良率和產能。As described in the previous technology, the currently known carbon dioxide laser cutting method will cause edge melting on the substrate, resulting in poor cutting accuracy, which in turn leads to reduced product performance and process yield. In order to solve the above technical problems, the basic idea of the present invention is to provide a carbon dioxide laser cutting method, which can break through the accuracy limitation of the laser cutting equipment itself and achieve the ability of high cutting accuracy, thereby improving the overall yield and production capacity by setting two metal frames on the inner and outer sides of the cutting path and using the gap between the two metal frames to limit the range of action of the carbon dioxide laser beam.

請參照第2圖至第4圖。第2圖為本發明之實施例所提供的二氧化碳雷射切割方法之流程圖;第3A圖至第3D圖為本發明之實施例所提供的二氧化碳雷射切割方法對應各個步驟的結構示意圖;第4圖為第3C圖的雷射照射過程之局部放大圖。Please refer to Figures 2 to 4. Figure 2 is a flow chart of the carbon dioxide laser cutting method provided by the embodiment of the present invention; Figures 3A to 3D are structural schematic diagrams corresponding to each step of the carbon dioxide laser cutting method provided by the embodiment of the present invention; Figure 4 is a partial enlarged view of the laser irradiation process of Figure 3C.

本發明所提供的二氧化碳雷射切割方法適用於將軟性基板切割為多個晶片。本發明之實施例中,軟性基板的材質可為高分子薄膜,例如,軟性基板的組成材料包括聚乙烯對苯二甲酸酯(PET)、聚丙烯(PP) 、聚亞醯胺(PI)、聚醯胺(PA)、聚甲基丙烯酸甲脂(PMMA)、聚碳酸酯(PC)、聚醚碸(PES)、聚原冰烯(PNB)、聚醚醚酮(PEEK)、聚萘二甲酸乙二醇酯(PEN)、環烯烴聚合物(COP)或環烯烴共聚物(COC),但不限於此。本發明之實施例中,晶片可為具有金屬網格或ITO金屬導電膜的感測晶片。以下詳細說明本發明實施例的二氧化碳雷射切割方法中的各個步驟。The carbon dioxide laser cutting method provided by the present invention is suitable for cutting a flexible substrate into multiple chips. In the embodiment of the present invention, the material of the flexible substrate can be a polymer film. For example, the component material of the flexible substrate includes polyethylene terephthalate (PET), polypropylene (PP), polyimide (PI), polyamide (PA), polymethyl methacrylate (PMMA), polycarbonate (PC), polyether sulphate (PES), polyprotoethylene (PNB), polyether ether ketone (PEEK), polyethylene naphthalate (PEN), cycloolefin polymer (COP) or cycloolefin copolymer (COC), but is not limited to this. In the embodiment of the present invention, the chip can be a sensing chip with a metal grid or an ITO metal conductive film. The following is a detailed description of each step in the carbon dioxide laser cutting method of the embodiment of the present invention.

首先,見步驟S10,如第3A圖所示,提供前述之軟性基板30,軟性基板30具有設定在表面的複數切割道32及藉由這些切割道32所區劃的複數晶片40。First, see step S10 , as shown in FIG. 3A , the aforementioned flexible substrate 30 is provided. The flexible substrate 30 has a plurality of scribe lines 32 disposed on the surface and a plurality of chips 40 divided by the scribe lines 32 .

接著,見步驟S20,如第3B圖所示,在各個晶片40周圍形成外部金屬框50和內部金屬框52,其中外部金屬框50沿著切割道32遠離各個晶片40的一側設置,內部金屬框52沿著切割道32靠近各個晶片40的一側設置,且外部金屬框50和內部金屬框52之間夾有將每一切割道32部分暴露出來的間隙56。Next, see step S20, as shown in FIG. 3B, an outer metal frame 50 and an inner metal frame 52 are formed around each chip 40, wherein the outer metal frame 50 is arranged along a side of the cutting path 32 away from each chip 40, and the inner metal frame 52 is arranged along a side of the cutting path 32 close to each chip 40, and a gap 56 is sandwiched between the outer metal frame 50 and the inner metal frame 52 to expose a portion of each cutting path 32.

最後,見步驟S30,如第3C圖和第4圖所示,利用二氧化碳雷射光束1沿著暴露於間隙56的切割道32進行照射,而將軟性基板30沿著間隙56分割成如第3D圖所示的獨立的多個晶片40。Finally, in step S30, as shown in FIG. 3C and FIG. 4, the carbon dioxide laser beam 1 is irradiated along the cutting path 32 exposed to the gap 56, and the flexible substrate 30 is divided along the gap 56 into a plurality of independent chips 40 as shown in FIG. 3D.

如第3D圖所示,本發明之實施例所使用的各個晶片40可在表面定義有作動區A1及包圍作動區A1的邊框區A2,外部金屬框50設置於切割道32並沿著邊框區A2的外側延伸,內部金屬框52設置於邊框區A2並沿著切割道32的內側延伸。進一步請參照第5A圖和第5B圖,其分別為本發明之實施例所製得的晶片之具體結構示意圖及局部放大圖。本發明之實施例在步驟S20中,可在各個晶片40表面的作動區A1形成有感應電極層42,感應電極層42可為金屬網格或是ITO透明導電膜,然後在邊框區A2形成有金屬線路層(為清楚呈現本發明之技術特徵,圖中省略未示),金屬線路層電性連接感應電極層42。在步驟S20中,本發明之實施例也在邊框區A2形成有多個連接墊46,這些連接墊46電性連接金屬線路層和感應電極層42。在步驟(2)中,本發明之實施例更於邊框區A2形成複數接地墊48,這些接地墊48電性連接內部金屬框52,使內部金屬框52作為接地線,以除去靜電干擾。在本發明之實施例中,外部金屬框50和內部金屬框52的圖案化作業可以和金屬線路層、連接墊46、接地墊48的圖案化同層製作完成。As shown in FIG. 3D , each chip 40 used in the embodiment of the present invention may define an active area A1 and a frame area A2 surrounding the active area A1 on the surface, an external metal frame 50 is disposed on the cutting path 32 and extends along the outer side of the frame area A2, and an internal metal frame 52 is disposed on the frame area A2 and extends along the inner side of the cutting path 32. Please further refer to FIG. 5A and FIG. 5B , which are respectively a schematic diagram and a partial enlarged diagram of the specific structure of the chip manufactured in the embodiment of the present invention. In the embodiment of the present invention, in step S20, a sensing electrode layer 42 may be formed in the active area A1 on the surface of each chip 40. The sensing electrode layer 42 may be a metal grid or an ITO transparent conductive film. Then, a metal circuit layer (omitted in the figure to clearly present the technical features of the present invention) is formed in the frame area A2. The metal circuit layer is electrically connected to the sensing electrode layer 42. In step S20, the embodiment of the present invention also forms a plurality of connection pads 46 in the frame area A2. These connection pads 46 are electrically connected to the metal circuit layer and the sensing electrode layer 42. In step (2), the embodiment of the present invention further forms a plurality of ground pads 48 in the frame area A2. These ground pads 48 are electrically connected to the inner metal frame 52, so that the inner metal frame 52 serves as a ground line to eliminate electrostatic interference. In the embodiment of the present invention, the patterning of the outer metal frame 50 and the inner metal frame 52 can be completed at the same time as the patterning of the metal circuit layer, the connection pad 46, and the ground pad 48.

另外,在步驟S30中,本發明之實施例所使用的二氧化碳雷射光束1的波長大約在9.2至9.7微米之間與10.2至10.7微米之間的範圍,代表性的波長有9.3、9.6、10.6微米,本實施例是使用波長10.6微米的二氧化碳雷射光束1。而在步驟S20中,本發明所形成的外部金屬框和內部金屬框由於金屬材料較不吸收二氧化碳雷射光束的波長,因此不會因雷射產生高溫而導致軟性基板的邊緣熔融現象,且外部金屬框和內部金屬框之間的間隙寬度必須大於或等於二氧化碳雷射光束的波長,使二氧化碳雷射光束得以充分作用於間隙內來進行切割。如第8圖所示,其為不同金屬對相關波長之吸收情形。從圖中顯示,鋁(Al)、銀(Ag)、金(Au)對於二氧化碳雷射(波長10.6微米)的吸收率最佳,其次依序為銅(Cu)、鉬(Mo)、鐵(Fe)、不鏽鋼。本發明之實施例中,外部金屬框和內部金屬框可以選用各種金屬材料來構成,例如圖中揭示的鋁(Al)、銀(Ag)、金(Au)、銅(Cu)、鉬(Mo)、鐵(Fe)、不鏽鋼等金屬材料,其中又以鋁(Al)、銀(Ag)、金(Au)為較佳,其對於二氧化碳雷射波長之吸收率皆趨近於0,幾乎不會吸收二氧化碳雷射光束的波長。In addition, in step S30, the wavelength of the CO2 laser beam 1 used in the embodiment of the present invention is approximately between 9.2 and 9.7 microns and between 10.2 and 10.7 microns, and the representative wavelengths are 9.3, 9.6, and 10.6 microns. The present embodiment uses the CO2 laser beam 1 with a wavelength of 10.6 microns. In step S20, the outer metal frame and the inner metal frame formed by the present invention do not absorb the wavelength of the CO2 laser beam because the metal material does not absorb the wavelength of the CO2 laser beam. Therefore, the edge of the soft substrate will not melt due to the high temperature generated by the laser, and the gap width between the outer metal frame and the inner metal frame must be greater than or equal to the wavelength of the CO2 laser beam, so that the CO2 laser beam can fully act in the gap to perform cutting. As shown in FIG. 8, it is the absorption of different metals to related wavelengths. As shown in the figure, aluminum (Al), silver (Ag), and gold (Au) have the best absorption rate for carbon dioxide laser (wavelength 10.6 microns), followed by copper (Cu), molybdenum (Mo), iron (Fe), and stainless steel. In the embodiment of the present invention, the external metal frame and the internal metal frame can be made of various metal materials, such as aluminum (Al), silver (Ag), gold (Au), copper (Cu), molybdenum (Mo), iron (Fe), stainless steel, etc., among which aluminum (Al), silver (Ag), and gold (Au) are preferred, and their absorption rates for the wavelength of carbon dioxide laser are close to 0, and they almost do not absorb the wavelength of the carbon dioxide laser beam.

根據本發明所提供的二氧化碳雷射切割方法,乃利用金屬表面較不吸收二氧化碳雷射光束的波長,而在切割道內外兩側分別內部金屬框和外部金屬框,並利用外部金屬框和內部金屬框之間的間隙來限縮二氧化碳雷射光束的作用範圍,最終所切割出的晶片外形可以和設計圖面非常接近(其切割精度<10微米),可突破雷射切割設備本身的精度限制,達到具有高切割精度的能力,從而提升整體良率和產能。According to the carbon dioxide laser cutting method provided by the present invention, the metal surface is less likely to absorb the wavelength of the carbon dioxide laser beam, and an inner metal frame and an outer metal frame are provided on the inner and outer sides of the cutting path respectively, and the gap between the outer metal frame and the inner metal frame is used to limit the effective range of the carbon dioxide laser beam. The shape of the chip finally cut can be very close to the design drawing (the cutting accuracy is less than 10 microns), which can break through the accuracy limitation of the laser cutting equipment itself and achieve the ability of high cutting accuracy, thereby improving the overall yield and production capacity.

接著,請參照第6A圖和第6B圖,其為本發明之實施例所提供的二氧化碳雷射切割方法中使用不同雷射焦斑尺寸的二氧化碳雷射光束之切割情形示意圖。第6A圖和第6B圖顯示了二氧化碳雷射光束1的預設的雷射焦斑位置,以及最大的雷射焦斑偏移位置P2。其中,預設的雷射焦斑位置P1是由雷射切割設備抓取繪圖定義的晶片外形圖面來決定,並依據雷射切割設備精度A而決定最大的雷射焦斑偏移位置P2,使得不管偏移多大,都能切割到外部金屬框50和內部金屬框52之間的間隙56。另外,第6A圖和第6B圖分別使用較小雷射焦斑尺寸和較大雷射焦斑尺寸的二氧化碳雷射光束1,由於二氧化碳雷射光束1的切割路徑要能涵蓋偏移精度,若是雷射焦斑尺寸太小,則可以利用多道二氧化碳雷射光束1來進行多次切割,也可以達到相同的切割效果。Next, please refer to FIG. 6A and FIG. 6B, which are schematic diagrams of the cutting conditions of the CO2 laser beam with different laser focal spot sizes in the CO2 laser cutting method provided by the embodiment of the present invention. FIG. 6A and FIG. 6B show the preset laser focal spot position of the CO2 laser beam 1 and the maximum laser focal spot offset position P2. Among them, the preset laser focal spot position P1 is determined by the wafer outline drawing defined by the laser cutting equipment grabbing drawing, and the maximum laser focal spot offset position P2 is determined according to the laser cutting equipment accuracy A, so that no matter how large the offset is, the gap 56 between the outer metal frame 50 and the inner metal frame 52 can be cut. In addition, FIG. 6A and FIG. 6B use a CO2 laser beam 1 with a smaller laser focal spot size and a larger laser focal spot size, respectively. Since the cutting path of the CO2 laser beam 1 must be able to cover the offset accuracy, if the laser focal spot size is too small, multiple CO2 laser beams 1 can be used to perform multiple cuts to achieve the same cutting effect.

進一步說明,在步驟S30中,本發明之實施例所提供的二氧化碳雷射切割方法較佳滿足下列條件: 其中,LW為內部金屬框的線寬(metal frame line width); 為雷射切割設備精度; S為間隙寬度。 To further illustrate, in step S30, the carbon dioxide laser cutting method provided by the embodiment of the present invention preferably satisfies the following conditions: Where LW is the line width of the internal metal frame (metal frame line width); is the accuracy of laser cutting equipment; S is the gap width.

舉例而言,雷射切割設備精度 為±100微米(μm),間隙寬度S設定為30微米,則內部金屬框的線寬可設定為185微米。 For example, the accuracy of laser cutting equipment If the gap width S is set to ±100 microns (μm) and the gap width S is set to 30 μm, the line width of the inner metal frame can be set to 185 μm.

本發明是利用外部金屬框和內部金屬框之間的間隙來定義切割後的晶片外形,而晶片外形之切割精度取決於外部金屬框和內部金屬框的圖面設計精度,因此,內部金屬框的線寬LW和間隙寬度S的設定皆可視實際需求而定,並不予以特別限制。傳統的二氧化碳雷射切割製程的切割精度取決於雷射切割設備精度 ,然而,雷射切割設備精度 的高低和價格成本息息相關,本發明則可以使用一般等級且價格便宜的雷射切割設備來達到高切割精度的技術效果,與傳統方法相比,本發明具有非常大的技術優勢。而本發明之實施例所採用的雷射切割設備精度 為50至200微米,當然,本發明在實務上不以此為限,也可以採用更高精度的雷射切割設備,只是其價格相對較高。 The present invention uses the gap between the outer metal frame and the inner metal frame to define the shape of the chip after cutting. The cutting accuracy of the chip shape depends on the design accuracy of the outer metal frame and the inner metal frame. Therefore, the line width LW and the gap width S of the inner metal frame can be set according to actual needs and are not particularly restricted. The cutting accuracy of the traditional carbon dioxide laser cutting process depends on the accuracy of the laser cutting equipment. However, the accuracy of laser cutting equipment The level of the laser cutting equipment used in the present invention is closely related to the price cost. The present invention can use general-grade and cheap laser cutting equipment to achieve the technical effect of high cutting accuracy. Compared with the traditional method, the present invention has a very large technical advantage. The laser cutting equipment used in the embodiment of the present invention has a high precision. The precision of the cutting process is 50 to 200 microns. Of course, the present invention is not limited to this in practice, and a laser cutting device with higher precision can also be used, but its price is relatively high.

請參照第7A圖和第7B圖,其分別為使用本發明所提供的二氧化碳雷射切割方法對於表面清潔前後的金屬線路進行照射的表面外觀圖。將二氧化碳雷射光束沿著軟性基板30表面的切割路徑P對於金屬線路60進行照射,結果顯示,在表面清潔之前(見第7A圖)和表面清潔之後(見第7B圖),本發明使用的二氧化碳雷射光束皆不會破壞金屬線路60,可知外部金屬框和內部金屬框的設計的確可以有效限縮二氧化碳雷射光束的作用範圍,而獲得較高的切割精度。Please refer to FIG. 7A and FIG. 7B, which are respectively the surface appearance pictures of the metal circuit 60 irradiated by the carbon dioxide laser cutting method provided by the present invention before and after surface cleaning. The carbon dioxide laser beam is irradiated along the cutting path P on the surface of the flexible substrate 30. The results show that the carbon dioxide laser beam used in the present invention will not damage the metal circuit 60 before surface cleaning (see FIG. 7A) and after surface cleaning (see FIG. 7B). It can be seen that the design of the external metal frame and the internal metal frame can effectively limit the scope of action of the carbon dioxide laser beam and obtain a higher cutting accuracy.

綜上所述,根據本發明所提供的二氧化碳雷射切割方法,其適用於將軟性基板切割為多個晶片,可以克服現有二氧化碳雷射切割方法基板造成邊緣熔融現象,使得切割精度不佳,而導致產品性能及製程良率降低的問題。根據本發明所提供的二氧化碳雷射切割方法,藉由金屬表面較不吸收二氧化碳雷射光束波長之特性,而在切割道內外兩側分別內部金屬框和外部金屬框,並利用外部金屬框和內部金屬框之間的間隙來限縮二氧化碳雷射光束的作用範圍。藉此,本發明可以突破雷射切割設備本身的精度限制,可以使用一般等級且價格便宜的雷射切割設備而達到具有高切割精度的能力,可避免晶片的尺寸缺陷,從而提升整體良率和產能。另外,本發明可將雷射切割後所留下的內部金屬框進一步設計為接地結構,不會增加額外的流程步驟,可達到精簡製程及節省成本。In summary, the carbon dioxide laser cutting method provided by the present invention is suitable for cutting a soft substrate into multiple chips, and can overcome the problem that the existing carbon dioxide laser cutting method causes edge melting of the substrate, resulting in poor cutting accuracy, and leading to reduced product performance and process yield. According to the carbon dioxide laser cutting method provided by the present invention, by taking advantage of the characteristic that the metal surface is less likely to absorb the wavelength of the carbon dioxide laser beam, an internal metal frame and an external metal frame are provided on the inner and outer sides of the cutting path, respectively, and the gap between the external metal frame and the internal metal frame is used to limit the range of action of the carbon dioxide laser beam. In this way, the present invention can break through the accuracy limitation of the laser cutting equipment itself, and can use general-grade and inexpensive laser cutting equipment to achieve the ability to have high cutting accuracy, which can avoid chip size defects, thereby improving the overall yield and production capacity. In addition, the present invention can further design the internal metal frame left after laser cutting into a grounding structure without adding additional process steps, thereby achieving process simplification and cost saving.

唯以上所述者,僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾,均應包括於本發明之申請專利範圍內。However, the above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, all equivalent changes or modifications based on the features and spirit described in the scope of the present invention should be included in the scope of the patent application of the present invention.

1:二氧化碳雷射光束 10:基板 12:切割道 20:晶片 30:基板 32:切割道 40:晶片 42:感應電極層 46:連接墊 48:接地墊 50:外部金屬框 52: 內部金屬框 56:間隙 60:金屬線路 A: 雷射切割設備精度 A1:作動區 A2:邊框區 d1、d2、d3、d4:距離 LW:內部金屬框的線寬 P:切割路徑 P1:預設的雷射焦斑位置 P2:最大的雷射焦斑偏移位置 S:間隙寬度 S10:步驟 S20:步驟 S30:步驟 1: CO2 laser beam 10: Substrate 12: Cutting path 20: Chip 30: Substrate 32: Cutting path 40: Chip 42: Sensing electrode layer 46: Connection pad 48: Ground pad 50: External metal frame 52: Internal metal frame 56: Gap 60: Metal line A: Laser cutting equipment accuracy A1: Action area A2: Frame area d1, d2, d3, d4: Distance LW: Line width of internal metal frame P: Cutting path P1: Default laser focus position P2: Maximum laser focus offset position S: Gap width S10: Step S20: Step S30: Step

第1A圖為一種設定切割後的晶片圖面之示意圖。 第1B圖為一種先前技術的二氧化碳雷射切割方法中因切割精度不良導致切成大小不一致的晶片外形之示意圖。 第2圖為本發明之實施例所提供的二氧化碳雷射切割方法之流程圖。 第3A圖至第3D圖為本發明之實施例所提供的二氧化碳雷射切割方法對應各個步驟的結構示意圖。 第4圖為第3C圖的雷射照射過程之局部放大圖。 第5A圖和第5B圖分別為本發明之實施例所製得的晶片之具體結構示意圖及局部放大圖。 第6A圖和第6B圖為本發明之實施例所提供的二氧化碳雷射切割方法中使用不同雷射焦斑尺寸的二氧化碳雷射光束之切割情形示意圖。 第7A圖和第7B圖分別為使用本發明所提供的二氧化碳雷射切割方法對於表面清潔前後的金屬線路進行照射的表面外觀圖。 第8圖為不同金屬對相關波長吸收情形之示意圖。 FIG. 1A is a schematic diagram of a wafer after setting the cutting. FIG. 1B is a schematic diagram of a wafer with inconsistent size due to poor cutting accuracy in a prior art CO2 laser cutting method. FIG. 2 is a flow chart of the CO2 laser cutting method provided by an embodiment of the present invention. FIG. 3A to FIG. 3D are structural schematic diagrams corresponding to each step of the CO2 laser cutting method provided by an embodiment of the present invention. FIG. 4 is a partial enlarged diagram of the laser irradiation process of FIG. 3C. FIG. 5A and FIG. 5B are respectively a schematic diagram and a partial enlarged diagram of the specific structure of the wafer produced by the embodiment of the present invention. FIG. 6A and FIG. 6B are schematic diagrams of the cutting situation using a CO2 laser beam with different laser focal spot sizes in the CO2 laser cutting method provided by an embodiment of the present invention. Figures 7A and 7B are respectively the surface appearance images of the metal circuits irradiated before and after the surface cleaning using the carbon dioxide laser cutting method provided by the present invention. Figure 8 is a schematic diagram of the absorption of related wavelengths by different metals.

S10:步驟 S10: Step

S20:步驟 S20: Step

S30:步驟 S30: Step

Claims (9)

一種二氧化碳雷射切割方法,包含有下列步驟: (1) 提供一軟性基板,該軟性基板具有設定在表面的複數切割道及藉由該些切割道所區劃的複數晶片; (2) 在各該晶片周圍形成一外部金屬框和一內部金屬框,該外部金屬框沿著該些切割道遠離各該晶片的一側設置,該內部金屬框沿著該些切割道靠近各該晶片的一側設置,該外部金屬框和該內部金屬框之間夾有將每一該切割道部分暴露出來的間隙;以及 (3) 利用一二氧化碳雷射光束沿著暴露於該間隙的該些切割道進行照射,而將該軟性基板沿著該間隙分割成獨立的該些晶片,所述之二氧化碳雷射切割方法,其中各該晶片表面包含一作動區及包圍該作動區之一邊框區,該外部金屬框設置於該些切割道並沿著該邊框區的外側延伸,該內部金屬框設置於該邊框區並沿著該些切割道的內側延伸,其中在該步驟(2)中,更包含於邊框區形成複數接地墊,該些接地墊電性連接該內部金屬框,使該內部金屬框作為接地線。 A carbon dioxide laser cutting method comprises the following steps: (1) providing a flexible substrate having a plurality of cutting paths set on the surface and a plurality of chips divided by the cutting paths; (2) forming an outer metal frame and an inner metal frame around each of the chips, the outer metal frame being arranged along a side of the cutting paths away from each of the chips, the inner metal frame being arranged along a side of the cutting paths close to each of the chips, and a gap being sandwiched between the outer metal frame and the inner metal frame to expose a portion of each of the cutting paths; and (3) A carbon dioxide laser beam is used to irradiate along the cutting paths exposed to the gap, and the flexible substrate is divided into independent chips along the gap. The carbon dioxide laser cutting method, wherein each chip surface includes an active area and a frame area surrounding the active area, the outer metal frame is arranged on the cutting paths and extends along the outer side of the frame area, and the inner metal frame is arranged on the frame area and extends along the inner side of the cutting paths. In the step (2), a plurality of ground pads are formed in the frame area, and the ground pads are electrically connected to the inner metal frame, so that the inner metal frame serves as a ground wire. 如請求項1所述之二氧化碳雷射切割方法,其中該外部金屬框和該內部金屬框的材料為鋁(Al)、銀(Ag)或金(Au)。A carbon dioxide laser cutting method as described in claim 1, wherein the material of the outer metal frame and the inner metal frame is aluminum (Al), silver (Ag) or gold (Au). 如請求項1所述之二氧化碳雷射切割方法,其中該間隙寬度大於或等於該二氧化碳雷射光束的波長。A carbon dioxide laser cutting method as described in claim 1, wherein the gap width is greater than or equal to the wavelength of the carbon dioxide laser beam. 如請求項1所述之二氧化碳雷射切割方法,其中該二氧化碳雷射光束的波長在9.2至9.7微米之間或10.2至10.7微米之間的範圍。A carbon dioxide laser cutting method as described in claim 1, wherein the wavelength of the carbon dioxide laser beam is in the range of 9.2 to 9.7 microns or 10.2 to 10.7 microns. 如請求項1所述之二氧化碳雷射切割方法,滿足下列條件: 其中,LW為該內部金屬框的線寬; 為雷射切割設備精度; S為該間隙寬度。 The carbon dioxide laser cutting method as described in claim 1 satisfies the following conditions: Wherein, LW is the line width of the inner metal frame; is the accuracy of the laser cutting equipment; S is the width of the gap. 如請求項5所述之二氧化碳雷射切割方法,其中該 為50至200微米。 The carbon dioxide laser cutting method as described in claim 5, wherein the 50 to 200 microns. 如請求項1所述之二氧化碳雷射切割方法,其中在該步驟(2)中,更包含於該作動區和該邊框區分別形成一感應電極層和一金屬線路層,該金屬線路層電性連接該感應電極層。The carbon dioxide laser cutting method as described in claim 1, wherein in the step (2), it further includes forming a sensing electrode layer and a metal circuit layer in the active area and the frame area respectively, and the metal circuit layer is electrically connected to the sensing electrode layer. 如請求項7所述之二氧化碳雷射切割方法,其中在該步驟(2)中,更包含於該邊框區形成複數連接墊,該些連接墊電性連接該金屬線路層和該感應電極層。The carbon dioxide laser cutting method as described in claim 7, wherein in the step (2), it further includes forming a plurality of connection pads in the frame area, and the connection pads electrically connect the metal circuit layer and the sensing electrode layer. 如請求項1所述之二氧化碳雷射切割方法,其中該軟性基板的組成材料包括聚乙烯對苯二甲酸酯(PET)、聚丙烯(PP) 、聚亞醯胺(PI)、聚醯胺(PA)、聚甲基丙烯酸甲脂(PMMA)、聚碳酸酯(PC)、聚醚碸(PES)、聚原冰烯(PNB)、聚醚醚酮(PEEK)、聚萘二甲酸乙二醇酯(PEN)、環烯烴聚合物(COP)或環烯烴共聚物(COC)。A carbon dioxide laser cutting method as described in claim 1, wherein the component material of the flexible substrate includes polyethylene terephthalate (PET), polypropylene (PP), polyimide (PI), polyamide (PA), polymethyl methacrylate (PMMA), polycarbonate (PC), polyether sulphate (PES), polyprotoethylene (PNB), polyether ether ketone (PEEK), polyethylene naphthalate (PEN), cycloolefin polymer (COP) or cycloolefin copolymer (COC).
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US20160023305A1 (en) * 2014-03-12 2016-01-28 Boe Technology Group Co., Ltd. Optical mask plate and laser lift-off device
CN109434307A (en) * 2018-12-29 2019-03-08 大族激光科技产业集团股份有限公司 A kind of laser cutting method and laser cutting device of flexible screen
CN110883439A (en) * 2019-11-29 2020-03-17 京东方科技集团股份有限公司 Flexible AMOLED cutting method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160023305A1 (en) * 2014-03-12 2016-01-28 Boe Technology Group Co., Ltd. Optical mask plate and laser lift-off device
CN109434307A (en) * 2018-12-29 2019-03-08 大族激光科技产业集团股份有限公司 A kind of laser cutting method and laser cutting device of flexible screen
CN110883439A (en) * 2019-11-29 2020-03-17 京东方科技集团股份有限公司 Flexible AMOLED cutting method

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