TWI874760B - Electronic device - Google Patents
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Abstract
Description
本揭露是有關於一種電子裝置。The present disclosure relates to an electronic device.
多數裝置(如顯示裝置或光開關等)具有隨機排列於多個畫素中以用於支撐間隙(cell gap)的多個間隙子。這些間隙子通常由遮光圖案遮蔽住,以降低漏光。當裝置需提升開口率(或是穿透率)時,多個間隙子的設置空間變得有限。Most devices (such as display devices or light switches) have multiple spacers randomly arranged in multiple pixels to support the cell gap. These spacers are usually shielded by a light-shielding pattern to reduce light leakage. When the device needs to increase the aperture ratio (or transmittance), the space for multiple spacers becomes limited.
本揭露提供一種電子裝置,其可提升開口率或是穿透率。The present disclosure provides an electronic device which can improve the opening rate or the transmittance.
在本揭露的一實施例中,電子裝置包括基板、訊號線以及間隙子。訊號線設置在基板上且包括至少一曲線線段。間隙子設置在基板上並與所述至少一曲線線段對應設置。In an embodiment of the present disclosure, an electronic device includes a substrate, a signal line, and a spacer. The signal line is disposed on the substrate and includes at least one curved line segment. The spacer is disposed on the substrate and corresponds to the at least one curved line segment.
為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present disclosure more clearly understood, embodiments are specifically cited below and described in detail with reference to the accompanying drawings.
現將詳細地參考本揭露的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and description to represent the same or like parts.
本揭露通篇說明書與所附的申請專利範圍中會使用某些詞彙來指稱特定元件。本領域具有通常知識者應理解,電子裝置製造商可能會以不同的名稱來指稱相同的元件。本文並不意在區分那些功能相同但名稱不同的元件。在下文說明書與申請專利範圍中,“含有”與“包含”等詞為開放式詞語,因此其應被解釋為“含有但不限定為…”之意。Certain terms are used throughout this disclosure and in the attached patent claims to refer to specific components. A person of ordinary skill in the art will understand that electronic device manufacturers may refer to the same component by different names. This document does not intend to distinguish between components that have the same function but different names. In the following description and patent claims, the words "including" and "comprising" are open-ended words and should be interpreted as "including but not limited to..."
本文中所提到的方向用語,例如:“上”、“下”、“前”、“後”、“左”、“右”等,僅是參考附圖的方向。因此,使用的方向用語是用來說明,而並非用來限制本揭露。在附圖中,各圖式繪示的是特定實施例中所使用的方法、結構及/或材料的通常性特徵。然而,這些圖式不應被解釋為界定或限制由這些實施例所涵蓋的範圍或性質。舉例來說,為了清楚起見,各膜層、區域及/或結構的相對尺寸、厚度及位置可能縮小或放大。Directional terms such as "up", "down", "front", "back", "left", "right", etc., mentioned herein are only with reference to the directions of the accompanying drawings. Therefore, the directional terms used are used to illustrate, but not to limit the present disclosure. In the accompanying drawings, each diagram depicts the general characteristics of the methods, structures and/or materials used in a particular embodiment. However, these diagrams should not be interpreted as defining or limiting the scope or nature covered by these embodiments. For example, for the sake of clarity, the relative size, thickness and position of each film layer, region and/or structure may be reduced or exaggerated.
本揭露中所敘述之一結構(或層別、元件、基材)位於另一結構(或層別、元件、基材)之上/上方,可以指二結構相鄰且直接連接,或是可以指二結構相鄰而非直接連接。非直接連接是指二結構之間具有至少一中介結構(或中介層別、中介元件、中介基材、中介間隔),一結構的下側表面相鄰或直接連接於中介結構的上側表面,另一結構的上側表面相鄰或直接連接於中介結構的下側表面。而中介結構可以是單層或多層的實體結構或非實體結構所組成,並無限制。在本揭露中,當某結構設置在其它結構“上”時,有可能是指某結構“直接”在其它結構上,或指某結構“間接”在其它結構上,即某結構和其它結構間還夾設有至少一結構。A structure (or layer, element, substrate) described in the present disclosure is located on/above another structure (or layer, element, substrate), which may mean that the two structures are adjacent and directly connected, or may mean that the two structures are adjacent but not directly connected. Indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate element, intermediate substrate, intermediate spacing) between the two structures, the lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intermediate structure. The intermediate structure can be composed of a single-layer or multi-layer physical structure or a non-physical structure, without limitation. In the present disclosure, when a certain structure is disposed "on" another structure, it may mean that the certain structure is "directly" on the other structure, or it may mean that the certain structure is "indirectly" on the other structure, that is, at least one structure is sandwiched between the certain structure and the other structure.
術語“大約”、“等於”、“相等”或“相同”、“實質上”或“大致上”一般解釋為在所給定的值或範圍的20%以內,或解釋為在所給定的值或範圍的10%、5%、3%、2%、1%或0.5%以內。The terms "approximately," "equal to," "equal," or "same," "substantially," or "substantially" are generally interpreted as being within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.
說明書與申請專利範圍中所使用的序數例如“第一”、“第二”等之用詞用以修飾元件,其本身並不意含及代表該(或該些)元件有任何之前的序數,也不代表某一元件與另一元件的順序、或是製造方法上的順序,該些序數的使用僅用來使具有某命名的元件得以和另一具有相同命名的元件能作出清楚區分。申請專利範圍與說明書中可不使用相同用詞,據此,說明書中的第一構件在申請專利範圍中可能為第二構件。The ordinal numbers used in the specification and patent application, such as "first", "second", etc., are used to modify the components. They do not imply or represent any previous ordinal number of the component (or components), nor do they represent the order of one component to another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The patent application and the specification may not use the same terms. Accordingly, the first component in the specification may be the second component in the patent application.
本揭露中所敘述之電性連接或耦接,皆可以指直接連接或間接連接,於直接連接的情況下,兩電路上元件的端點直接連接或以一導體線段互相連接,而於間接連接的情況下,兩電路上元件的端點之間具有開關、二極體、電容、電感、電阻、其他適合的元件、或上述元件的組合,但不限於此。The electrical connection or coupling described in the present disclosure may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the endpoints of the components on the two circuits, but not limited to these.
在本揭露中,厚度、長度與寬度的量測方式可以是採用光學顯微鏡(Optical Microscope,OM)量測而得,厚度或寬度則可以由電子顯微鏡中的剖面影像量測而得,但不以此為限。另外,任兩個用來比較的數值或方向,可存在著一定的誤差。另外,本揭露中所提到的術語“等於”、“相等”、“相同”、“實質上”或“大致上”通常代表落在給定數值或範圍的10%範圍內。此外,用語“給定範圍為第一數值至第二數值”、“給定範圍落在第一數值至第二數值的範圍內”表示所述給定範圍包括第一數值、第二數值以及它們之間的其它數值。若第一方向垂直於第二方向,則第一方向與第二方向之間的角度可介於80度至100度之間;若第一方向平行於第二方向,則第一方向與第二方向之間的角度可介於0度至10度之間。In the present disclosure, the thickness, length and width can be measured by using an optical microscope (OM), and the thickness or width can be measured by using a cross-sectional image in an electron microscope, but it is not limited thereto. In addition, any two values or directions used for comparison may have a certain error. In addition, the terms "equal to", "equal", "same", "substantially" or "approximately" mentioned in the present disclosure generally represent within 10% of a given value or range. In addition, the terms "a given range is from a first value to a second value", "a given range falls within the range from a first value to a second value" indicate that the given range includes the first value, the second value and other values therebetween. If the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.
須知悉的是,以下所舉實施例可以在不脫離本揭露的精神下,可將數個不同實施例中的特徵進行替換、重組、混合以完成其他實施例。各實施例間特徵只要不違背發明精神或相衝突,均可任意混合搭配使用。It should be noted that the following embodiments may replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features between embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.
除非另外定義,在此使用的全部用語(包含技術及科學用語)具有與本揭露所屬技術領域具有通常知識者通常理解的相同涵義。能理解的是,這些用語例如在通常使用的字典中定義用語,應被解讀成具有與相關技術及本揭露的背景或上下文一致的意思,而不應以一理想化或過度正式的方式解讀,除非在本揭露實施例有特別定義。Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meanings as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.
在本揭露中,電子裝置可包括顯示裝置、背光裝置、天線裝置、感測裝置或拼接裝置,但不以此為限。電子裝置可為可彎折或可撓式電子裝置。顯示裝置可為非自發光型顯示裝置或自發光型顯示裝置。電子裝置可例如包括液晶(liquid crystal)、發光二極體、螢光(fluorescence)、磷光(phosphor)、量子點(quantum dot,QD)、其它合適之顯示介質或前述之組合。天線裝置可為液晶型態的天線裝置或非液晶型態的天線裝置,感測裝置可為感測電容、光線、熱能或超聲波的感測裝置,但不以此為限。在本揭露中,電子裝置可包括電子元件,電子元件可包括被動元件與主動元件,例如電容、電阻、電感、二極體、電晶體等。二極體可包括發光二極體或光電二極體。發光二極體可例如包括有機發光二極體(organic light emitting diode,OLED)、次毫米發光二極體(mini LED)、微發光二極體(micro LED)或量子點發光二極體(quantum dot LED),但不以此為限。拼接裝置可例如是顯示器拼接裝置或天線拼接裝置,但不以此為限。需注意的是,電子裝置可為前述之任意排列組合,但不以此為限。此外,電子裝置的外型可為矩形、圓形、多邊形、具有彎曲邊緣的形狀或其他適合的形狀。電子裝置可以具有驅動系統、控制系統、光源系統、…等周邊系統以支援顯示裝置、天線裝置、穿戴式裝置(例如包括擴增實境或虛擬實境)、車載裝置(例如包括汽車擋風玻璃)或拼接裝置。In the present disclosure, the electronic device may include a display device, a backlight device, an antenna device, a sensing device or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The electronic device may, for example, include liquid crystal, a light-emitting diode, fluorescence, phosphor, quantum dot (QD), other suitable display media or a combination thereof. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, and the sensing device may be a sensing device for sensing capacitance, light, heat or ultrasound, but is not limited thereto. In the present disclosure, the electronic device may include electronic components, and the electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. The light-emitting diode may, for example, include an organic light emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro LED, or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. The splicing device may, for example, be a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any arrangement or combination of the foregoing, but is not limited thereto. In addition, the appearance of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have a driving system, a control system, a light source system, etc. peripheral systems to support a display device, an antenna device, a wearable device (such as an augmented reality or a virtual reality), a vehicle-mounted device (such as a car windshield), or a splicing device.
須說明的是,下文中不同實施例所提供的技術方案可相互替換、組合或混合使用,以在未違反本揭露精神的情況下構成另一實施例。It should be noted that the technical solutions provided in the following different embodiments can be replaced, combined or mixed with each other to constitute another embodiment without violating the spirit of the present disclosure.
圖1、圖5以及圖9A至圖9C是根據本揭露的一些實施例的電子裝置的局部俯視示意圖。圖2是圖1中區域R的放大示意圖。圖3以及圖4分別是圖1中剖線A-A’以及圖2中剖線B-B’的剖面示意圖。圖6A至圖6D、圖8A以及圖8B是訊號線以及間隙子的多種相對設置關係的俯視示意圖。圖7是液晶分子與間隙子的相對設置關係的示意圖。FIG. 1, FIG. 5, and FIG. 9A to FIG. 9C are partial top views of electronic devices according to some embodiments of the present disclosure. FIG. 2 is an enlarged schematic view of region R in FIG. 1. FIG. 3 and FIG. 4 are cross-sectional schematic views of section line A-A' in FIG. 1 and section line B-B' in FIG. 2, respectively. FIG. 6A to FIG. 6D, FIG. 8A, and FIG. 8B are top views of various relative arrangement relationships of signal lines and spacers. FIG. 7 is a schematic view of the relative arrangement relationship of liquid crystal molecules and spacers.
請參照圖1至圖4,電子裝置1可包括基板10、訊號線12以及間隙子14。訊號線12設置在基板10上且包括至少一曲線線段(如圖5的曲線線段120)。間隙子14設置在基板10上並與所述至少一曲線線段120對應設置,亦即,間隙子14在電子裝置1的俯視方向(如方向D3)上與所述至少一曲線線段120至少部分重疊。本揭露的電子裝置1例如可應用於擴增實境且可用於調光(光開關),以增加顯示的對比度,但不以此為限。本揭露中的“曲線”例如為非直線線段或是具有至少一曲率半徑的線段,曲線可例如為S型或是具有至少一反曲點的線段。Please refer to Figures 1 to 4, the
詳細來說,基板10可為硬質基板或可撓基板。基板10的材料例如包括玻璃、石英、陶瓷、藍寶石或塑膠等,但不以此為限。在一些實施例中,基板10可以是可撓基板,且基板10的材料可包括聚碳酸酯(polycarbonate,PC)、聚醯亞胺(polyimide,PI)、聚丙烯(polypropylene,PP)、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、其他合適的可撓材料或前述材料的組合,但不以此為限。Specifically, the
訊號線12例如可為掃描線、資料線或其他種類的訊號線。訊號線12的材料可包括金屬、金屬合金、金屬氧化物、透明導電材料、任何導體或上述的組合,但不以此為限。在一些實施例中,訊號線12可由金屬或金屬合金等導電性高的材料形成,以降低阻抗或利於訊號傳輸。在另一些實施例中,訊號線12可由透明導電材料形成,可以降低光學干擾(例如繞射現象),以提升電子裝置的顯示品質。The
圖1示意性繪示出訊號線12包括多個曲線線段,且多個曲線線段在方向D1上排列且連接成波浪形狀。然而應理解,訊號線12的種類、曲線線段的數量、多個曲線線段的排列方式或多個曲線線段連接所形的形狀可根據實際需求改變,而不以圖1所顯示的為限。在其他實施例中,電子裝置更包含訊號線13大致沿另一方向(例如方向D2)延伸,訊號線13的多個曲線線段可在方向D2上排列且相互連接,但不以此為限。於本揭露中,方向D1例如為訊號線12的延伸方向,方向D2例如為訊號線13的延伸方向,方向D2與方向D3可大致垂直,方向D3例如平行基板10表面的法線方向,方向D3可以垂直於方向D1及方向D2。FIG. 1 schematically illustrates that the
間隙子14可包括主間隙子、次間隙子或上述的組合。主間隙子的相對兩端可分別接觸主動元件陣列基板SUB-A以及對向基板SUB-B,如圖4的間隙子15所示。次間隙子的一端可接觸主動元件陣列基板SUB-A以及對向基板SUB-B的其中一個,且次間隙子的另一端在電子裝置1未被按壓時不與主動元件陣列基板SUB-A以及對向基板SUB-B的其中另一個接觸,如圖3的間隙子14所示。主動元件陣列基板SUB-A例如可以包括基板10以及基板10上的膜層(例如絕緣層、導電層及半導體層),對向基板SUB-B例如可以包括基板11及基板11上的膜層(例如絕緣層、導電層)。在一些實施例中,次間隙子的最大厚度(如圖3中間隙子14在方向D3上的最大厚度T14)小於主間隙子的最大厚度(如圖4中間隙子15在方向D3上的最大厚度T15)。在另一些實施例中,主間隙子及/或次間隙子可以與另一支撐元件對應(未繪示)設置,舉例來說,當主間隙子設置於主動元件陣列基板時,一支撐元件可以設置於對向基板並於方向D3上與主間隙子至少部分重疊,也就是說主間隙子的一端接觸在基板另一端的支撐元件;也可以設置另一支撐元件與次間隙子對應設置,但本揭露並不以此為限。The
電子裝置1可包括多個間隙子14。在本實施例中,多個間隙子14例如為多個次間隙子,但不以此為限。在其他實施例中,儘管未繪示,多個間隙子14可為多個主間隙子;或者,多個間隙子14可為多個主間隙子以及多個次間隙子的組合,即一些間隙子14為主間隙子,而另一些間隙子14為次間隙子。The
多個間隙子14可與訊號線12的多個曲線線段對應設置。以圖1為例,多個間隙子14可對應訊號線12的波峰C、波谷T或上述的組合設置,即多個間隙子14可與訊號線12的多個波峰C重疊設置;或者,多個間隙子14可與訊號線12的多個波谷T重疊設置;或者,多個間隙子14可與波浪形狀的多個波峰C以及多個波谷T重疊設置。然而應理解,多個間隙子14與多個曲線線段的相對設置關係可根據實際需求改變,而不以圖1所顯示的為限。The plurality of
透過間隙子14與訊號線12對應設置的設計,可利用訊號線12或遮蔽訊號線12的遮光圖案(未繪示)來遮蔽間隙子14,而有助於增加間隙子的設置空間及設置密度。因此,電子裝置1可在維持所需的解析度及/或開口率的同時,維持所需的回彈力或間隙的均勻度。By designing that the
在一些實施例中,電子裝置1還可包括介質層ML及基板11,基板10與基板11對應設置。介質層ML設置在基板10及基板11之間且具有配向方向DA。訊號線12的所述至少一曲線線段120沿一方向DE延伸,所述方向DE與配向方向DA有一夾角θ,夾角θ例如大於或等於0度且小於或等於20度。In some embodiments, the
舉例來說,介質層ML可包括液晶材料,但不以此為限。請參考圖3及圖4,電子裝置1還可包括配向層AL1以及配向層AL2,配向層AL1以及配向層AL2分別設置在介質層ML的相對測,以控制介質層ML的配向方向DA。介質層ML的配向方向DA可使用偏光測定儀(如AxoScan)或相位差量測系統(如RETS)等儀器量測,但不以此為限。在另一些實施例中,可以使用光學顯微鏡觀察間隙子周圍的拖曳痕跡以量測配向方向。請參考圖6A,曲線線段120的延伸方向(方向DE)可為所述曲線線段120的頂點A的切線方向TD;或者,可以圍繞所述曲線線段120的最小矩形RT的長軸方向L作為曲線線段120的延伸方向(方向DE)。For example, the dielectric layer ML may include a liquid crystal material, but is not limited thereto. Referring to FIG. 3 and FIG. 4 , the
如圖7所示,介質層ML中鄰近間隙子14的液晶分子M容易受到間隙子14的地勢影響而導致配向異常/缺陷(mura),造成漏光LL1。此外,鄰近間隙子14之背對配向方向DA側的液晶分子M容易因摩擦力不足而導致配向異常/缺陷,造成漏光LL2。可藉由訊號線12或與訊號線12重疊設置的遮光圖案(未繪示)來遮蔽間隙子14,以降低漏光LL1的可視性。另一方面,可透過0度≦夾角θ≦20度的設計,來縮減漏光LL2的影響面積或在不大幅影響開口率的情況下用遮光圖案遮蔽住漏光LL2。As shown in FIG. 7 , the liquid crystal molecules M adjacent to the
請參考圖2及圖4,在一些實施例中,電子裝置1還可包括主動元件AD以及另一間隙子15。主動元件AD設置在基板10上且電性連接訊號線12。主動元件AD可包括電晶體,但不以此為限。舉例來說,主動元件AD可包括閘極GE、半導體圖案CH、源極SE以及汲極DE,但不以此為限。主動元件AD所在的區域RAD例如由圍繞閘極GE、半導體圖案CH、源極SE以及汲極DE的最小矩形框來定義。2 and 4 , in some embodiments, the
間隙子15與主動元件AD的至少一部分重疊,即間隙子15與主動元件AD所在的區域RAD在方向D3上至少部分重疊。透過間隙子15與主動元件AD至少部分重疊的設計,可利用遮蔽主動元件AD的遮光圖案(未繪示)來遮蔽間隙子15,而有助於增加間隙子的設置空間。因此,電子裝置1可在維持所需的解析度及/或開口率的同時,維持所需的回彈力或間隙的均勻度。The
間隙子15可包括主間隙子、次間隙子或上述的組合。電子裝置1可包括多個間隙子15。在本實施例中,多個間隙子15例如為多個主間隙子,但不以此為限。在其他實施例中,儘管未繪示,多個間隙子15可為多個次間隙子;或者,多個間隙子15可為多個主間隙子以及多個次間隙子的組合,即一些間隙子15為主間隙子,而另一些間隙子15為次間隙子。The
根據不同的需求,電子裝置1還可包括其他元件或膜層。舉例來說,如圖3以及圖4所示,電子裝置1還可包括遮光層LS、絕緣層BF、半導體層SL、絕緣層GI、第一導電層C1、絕緣層ILD、第二導電層C2、絕緣層PLN、第三導電層C3以及第四導電層C4,但不以此為限。電子裝置1可根據不同的需求而增加或減少一個或多個元件/膜層。According to different requirements, the
主動元件陣列基板SUB-A例如包括基板10、遮光層LS、絕緣層BF、半導體層SL、絕緣層GI、第一導電層C1、絕緣層ILD、第二導電層C2、絕緣層PLN、第三導電層C3以及配向層AL1。對向基板SUB-B例如包括基板11、第四導電層C4以及配向層AL2。The active device array substrate SUB-A includes, for example, a
遮光層LS設置在基板10上。遮光層LS可由反光材質(如金屬或金屬合金)或吸光材質(如黑矩陣)形成。遮光層LS可包括遮光圖案LSP。遮光圖案LSP可對應半導體層SL的通道區RCH設置,亦即,遮光圖案LSP與通道區RCH在方向D3上重疊。The light shielding layer LS is disposed on the
絕緣層BF設置在基板10上且覆蓋遮光層LS。絕緣層BF的材料可包括無機絕緣材料,如氧化矽或氮化矽,但不以此為限。The insulating layer BF is disposed on the
半導體層SL設置在絕緣層BF上。半導體層SL的材料可包括氧化物半導體材料,如,銦鎵鋅氧化物(Indium Gallium Zinc Oxide,IGZO),但不以此為限。在其他實施例中,半導體層SL的材料可包括非晶矽(amorphous silicon)、多晶矽(polysilicon)、金屬氧化物、或上述的組合(例如有多個主動元件時)。半導體層SL可包括半導體圖案CH。半導體圖案CH可包括通道區RCH、源極區RSE以及汲極區RDE,但不以此為限。The semiconductor layer SL is disposed on the insulating layer BF. The material of the semiconductor layer SL may include an oxide semiconductor material, such as, but not limited to, Indium Gallium Zinc Oxide (IGZO). In other embodiments, the material of the semiconductor layer SL may include amorphous silicon, polysilicon, metal oxide, or a combination thereof (for example, when there are multiple active elements). The semiconductor layer SL may include a semiconductor pattern CH. The semiconductor pattern CH may include, but not limited to, a channel region RCH, a source region RSE, and a drain region RDE.
絕緣層GI設置在半導體層SL上。舉例來說,絕緣層GI的材料可包括無機材料,如氧化矽或氮化矽,但不以此為限。The insulating layer GI is disposed on the semiconductor layer SL. For example, the material of the insulating layer GI may include an inorganic material, such as silicon oxide or silicon nitride, but is not limited thereto.
第一導電層C1設置在絕緣層GI上。舉例來說,第一導電層C1的材料包括金屬或金屬疊層,如鋁、鉬或鈦/鋁/鈦。第一導電層C1可包括閘極GE、訊號線(如圖2所示的訊號線13)等,但不以此為限。閘極GE對應通道區RCH設置,亦即,閘極GE與通道區RCH在方向D3上重疊。訊號線13可為掃描線、資料線或其他種類的訊號線。圖1示意性繪示出訊號線13包括多個曲線線段,且多個曲線線段在方向D2上排列且連接成波浪形狀。然而應理解,訊號線13的種類、曲線線段的數量、多個曲線線段的排列方式或多個曲線線段連接所形的形狀可根據實際需求改變,而不以圖1所顯示的為限。The first conductive layer C1 is disposed on the insulating layer GI. For example, the material of the first conductive layer C1 includes metal or a metal stack, such as aluminum, molybdenum or titanium/aluminum/titanium. The first conductive layer C1 may include a gate GE, a signal line (such as the
絕緣層ILD設置在第一導電層C1上。舉例來說,絕緣層ILD的材料可包括無機材料,如氧化矽或氮化矽,但不以此為限。在一些實施例中,儘管未繪示,絕緣層ILD可為多層絕緣材料的堆疊層。The insulating layer ILD is disposed on the first conductive layer C1. For example, the material of the insulating layer ILD may include an inorganic material, such as silicon oxide or silicon nitride, but is not limited thereto. In some embodiments, although not shown, the insulating layer ILD may be a stacked layer of multiple insulating materials.
第二導電層C2設置在絕緣層ILD上。舉例來說,第二導電層C2的材料包括金屬,金屬氧化物或金屬疊層,如鋁、鉬或鈦/鋁/鈦、銦錫氧化物。第二導電層C2可包括源極SE、汲極DE、訊號線(如訊號線12)等,但不以此為限。源極SE貫穿絕緣層ILD以及絕緣層GI並與源極區RSE連接。汲極DE貫穿絕緣層ILD以及絕緣層GI並與汲極區RDE連接。The second conductive layer C2 is disposed on the insulating layer ILD. For example, the material of the second conductive layer C2 includes metal, metal oxide or metal stack, such as aluminum, molybdenum or titanium/aluminum/titanium, indium tin oxide. The second conductive layer C2 may include a source SE, a drain DE, a signal line (such as the signal line 12), etc., but is not limited thereto. The source SE penetrates the insulating layer ILD and the insulating layer GI and is connected to the source region RSE. The drain DE penetrates the insulating layer ILD and the insulating layer GI and is connected to the drain region RDE.
絕緣層PLN設置在絕緣層ILD上並覆蓋第二導電層C2。舉例來說,絕緣層PLN的材料包括有機材料或高分子材料,如聚甲基丙烯酸甲酯(PMMA)、環氧樹脂(epoxy)、丙烯酸類樹脂(acylic-based resin)、矽膠(silicone)、聚醯亞胺聚合物(polyimide polymer)或上述的組合,但不以此為限。在一些實施例中,儘管未繪示,絕緣層PLN可為多層有機材料或高分子材料的堆疊層。The insulating layer PLN is disposed on the insulating layer ILD and covers the second conductive layer C2. For example, the material of the insulating layer PLN includes an organic material or a polymer material, such as polymethyl methacrylate (PMMA), epoxy, acylic-based resin, silicone, polyimide polymer, or a combination thereof, but not limited thereto. In some embodiments, although not shown, the insulating layer PLN may be a stacked layer of multiple layers of organic material or polymer material.
第三導電層C3設置在絕緣層PLN上。第三導電層C3的材料包括透明導電材料,如金屬氧化物,但不以此為限。第三導電層C3可包括畫素電極PE,但不以此為限。畫素電極PE貫穿絕緣層PLN並與汲極DE連接。The third conductive layer C3 is disposed on the insulating layer PLN. The material of the third conductive layer C3 includes a transparent conductive material, such as metal oxide, but not limited thereto. The third conductive layer C3 may include a pixel electrode PE, but not limited thereto. The pixel electrode PE penetrates the insulating layer PLN and is connected to the drain DE.
配向層AL1設置在第三導電層C3上。配向層AL1可為光配向層,但不以此為限。The alignment layer AL1 is disposed on the third conductive layer C3. The alignment layer AL1 may be a photo-alignment layer, but is not limited thereto.
第四導電層C4以及配向層AL2依序設置在基板11面向主動元件陣列基板SUB-A的表面上。基板11可為硬質基板或可撓基板。基板11的材料可與基板10的材料相同或相似,於此不再贅述。第四導電層C4的材料包括透明導電材料,如金屬氧化物,但不以此為限。第四導電層C4可為整面的導電層,但不以此為限。配向層AL2可為光配向層,但不以此為限。The fourth conductive layer C4 and the alignment layer AL2 are sequentially arranged on the surface of the
請參照圖5,電子裝置1A與圖1的電子裝置1的主要差異在於多個間隙子14分別與訊號線12以及訊號線13重疊設置。此外,圖5中介質層(未繪示)的配向方向DA不同於圖1中介質層(未繪示)的配向方向DA,且間隙子14與訊號線12(或訊號線13)的相對設置關係依據介質層的配向方向DA改變,以滿足訊號線12的曲線線段120(或訊號線13的曲線線段130)的延伸方向(方向DE)與配向方向DA之間的夾角大於或等於0度且小於或等於20度的設計。Referring to FIG5 , the main difference between the
在一些實施例中,與訊號線12(或訊號線13)重疊的間隙子14可為單一間隙子(如圖6A所示)以具有較大的支撐強度;或者,間隙子14可為間隙子群(如圖6B至圖6D所示)以降低間隙子剝離(peeling)的風險。In some embodiments, the
在一些實施例中,間隙子14的形狀可為直線狀(如圖5所示)、曲線狀(如圖6A、圖6B所示)、點狀(如圖6C、圖6D所示的圓形或多邊形)或上述的組合,以提供不同的預壓高度(prepressing height)。In some embodiments, the shape of the
在一些實施例中,為了遮蔽圖7中間隙子14之背對配向方向DA側因摩擦力不足而導致配向異常/缺陷的區域所造成的漏光LL2,如圖8A以及圖8B所示,可依據介質層(未繪示)的配向方向DA改變間隙子14與訊號線12(或訊號線13)的相對設置關係,以使配向痕跡(rubbing trace)區域RT(即間隙子14之背對配向方向DA側因摩擦力不足而導致配向異常/缺陷的區域)落在主動元件所在的區域RAD中,以利用遮蔽區域RAD的遮光圖案(未繪示)來遮蔽圖7中的漏光LL2。In some embodiments, in order to shield the light leakage LL2 caused by the region with abnormal alignment/defect due to insufficient friction on the side of the
在一些實施例中,如圖9A至圖9C所示,訊號線12及/或訊號線13可為直線或折線,且兩條相鄰的訊號線12以及兩條相鄰的訊號線13所圍成的區域可為四邊形、六邊形或其他多邊形。在圖9A至圖9C中,可參照如圖1或圖5中訊號線12的延伸方向(方向DE)與配向方向DA之間的夾角大於或等於0度且小於或等於20度的設計及/或圖8A或圖8B中配向痕跡區域RT落在區域RAD中的設計來降低設置間隙子14所造成的漏光。In some embodiments, as shown in FIGS. 9A to 9C , the
在本揭露的實施例中,透過間隙子與訊號線對應設置的設計,可利用訊號線或遮蔽訊號線的遮光圖案來遮蔽間隙子,而有助於增加間隙子的設置空間,且可不必基於解析度及/或開口率的考量來減少間隙子的數量或排列密度。因此,電子裝置可在維持所需的解析度及/或開口率的同時,維持所需的回彈力或間隙的均勻度。In the embodiment of the present disclosure, by designing that the spacers are arranged correspondingly to the signal lines, the signal lines or the light shielding patterns that shield the signal lines can be used to shield the spacers, which helps to increase the space for arranging the spacers, and it is not necessary to reduce the number or arrangement density of the spacers based on the consideration of resolution and/or aperture ratio. Therefore, the electronic device can maintain the required resilience or uniformity of the spacers while maintaining the required resolution and/or aperture ratio.
以上各實施例僅用以說明本揭露的技術方案,而非對其限制;儘管參照前述各實施例對本揭露進行了詳細的說明,本領域具有通常知識者應當理解:其依然可以對前述各實施例所記載的技術方案進行修改,或者對其中部分或者全部技術特徵進行等同替換;而這些修改或者替換,並不使相應技術方案的本質脫離本揭露各實施例技術方案的範圍。The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure is described in detail with reference to the above embodiments, a person skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some or all of the technical features can be replaced by equivalent ones. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.
雖然本揭露的實施例及其優點已揭露如上,但應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作更動、替代與潤飾,且各實施例間的特徵可任意互相混合替換而成其他新實施例。此外,本揭露之保護範圍並未局限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟,任何所屬技術領域中具有通常知識者可從本揭露揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟,只要可以在此處所述實施例中實施大抵相同功能或獲得大抵相同結果皆可根據本揭露使用。因此,本揭露的保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。另外,每一請求項構成個別的實施例,且本揭露之保護範圍也包括各個及實施例的組合。本揭露之保護範圍當視隨附之申請專利範圍所界定者為准。Although the embodiments and advantages of the present disclosure have been disclosed as above, it should be understood that any person with ordinary knowledge in the relevant technical field can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure, and the features between the embodiments can be arbitrarily mixed and replaced with each other to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person with ordinary knowledge in the relevant technical field can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods and steps from the content of the present disclosure, as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described here, they can be used according to the present disclosure. Therefore, the scope of protection of the present disclosure includes the above-mentioned processes, machines, manufactures, material compositions, devices, methods and steps. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present disclosure also includes the combination of each and every embodiment. The scope of protection of the present disclosure shall be determined by the scope of the attached patent application.
1、1A:電子裝置
10、11:基板
12、13:訊號線
14、15:間隙子
120:曲線線段
A:頂點
AD:主動元件
AL1、AL2:配向層
BF、GI、ILD、PLN:絕緣層
C:波峰
C1:第一導電層
C2:第二導電層
C3:第三導電層
C4:第四導電層
CH:半導體圖案
D1、D2、D3、DE:方向
DA:配向方向
DE:汲極
GE:閘極
L:長軸方向
LL1、LL2:漏光
LS:遮光層
LSP:遮光圖案
M:液晶分子
ML:介質層
PE:畫素電極
R、RAD:區域
RCH:通道區
RDE:汲極區
RSE:源極區
RT:配向痕跡區域
SE:源極
SL:半導體層
SUB-A:主動元件陣列基板
SUB-B:對向基板
T:波谷
T14、T15:最大厚度
TD:切線方向
A-A’、B-B’:剖線
θ:夾角
1, 1A:
圖1、圖5以及圖9A至圖9C是根據本揭露的一些實施例的電子裝置的局部俯視示意圖。 圖2是圖1中區域R的放大示意圖。 圖3以及圖4分別是圖1中剖線A-A’以及圖2中剖線B-B’的剖面示意圖。 圖6A至圖6D、圖8A以及圖8B是訊號線以及間隙子的多種相對設置關係的俯視示意圖。 圖7是液晶分子與間隙子的相對設置關係的示意圖。 FIG. 1, FIG. 5, and FIG. 9A to FIG. 9C are partial top view schematic diagrams of electronic devices according to some embodiments of the present disclosure. FIG. 2 is an enlarged schematic diagram of region R in FIG. 1. FIG. 3 and FIG. 4 are cross-sectional schematic diagrams of section line A-A' in FIG. 1 and section line B-B' in FIG. 2, respectively. FIG. 6A to FIG. 6D, FIG. 8A, and FIG. 8B are top view schematic diagrams of various relative arrangement relationships of signal lines and spacers. FIG. 7 is a schematic diagram of the relative arrangement relationship between liquid crystal molecules and spacers.
1:電子裝置 1: Electronic devices
10:基板 10: Substrate
12、13:訊號線 12, 13: Signal line
14、15:間隙子 14, 15: Interstitial
C:波峰 C: Peak
D1、D2、D3、DE:方向 D1, D2, D3, DE: Direction
DA:配向方向 DA: Alignment direction
R、RAD:區域 R, RAD: Region
T:波谷 T:Trough
A-A’:剖線 A-A’: section line
θ:夾角 θ: angle of intersection
Claims (8)
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| US202163226769P | 2021-07-29 | 2021-07-29 | |
| US63/226,769 | 2021-07-29 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW594123B (en) * | 2001-08-29 | 2004-06-21 | Hitachi Ltd | Liquid crystal display apparatus using IPS display mode with high numerical aperture |
| KR20050117031A (en) * | 2004-06-09 | 2005-12-14 | 엘지.필립스 엘시디 주식회사 | Method for manufacturing color filter substrate |
| CN111736387A (en) * | 2020-06-30 | 2020-10-02 | 厦门天马微电子有限公司 | Display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108474985B (en) * | 2016-01-20 | 2021-06-15 | 夏普株式会社 | Liquid crystal display panel and method for manufacturing the same |
| CN205691917U (en) * | 2016-06-21 | 2016-11-16 | 厦门天马微电子有限公司 | A kind of display floater and display device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW594123B (en) * | 2001-08-29 | 2004-06-21 | Hitachi Ltd | Liquid crystal display apparatus using IPS display mode with high numerical aperture |
| KR20050117031A (en) * | 2004-06-09 | 2005-12-14 | 엘지.필립스 엘시디 주식회사 | Method for manufacturing color filter substrate |
| CN111736387A (en) * | 2020-06-30 | 2020-10-02 | 厦门天马微电子有限公司 | Display panel and display device |
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| CN115701254A (en) | 2023-02-07 |
| TW202519945A (en) | 2025-05-16 |
| TW202305462A (en) | 2023-02-01 |
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