TWI874373B - Exposure device, illumination optical system, and device manufacturing method - Google Patents
Exposure device, illumination optical system, and device manufacturing method Download PDFInfo
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/213—Exposing with the same light pattern different positions of the same surface at the same time
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
一種曝光裝置,包括:照明光學系統,具有光學積分器;投影光學系統;基板載台,使被曝光基板相對於投影光學系統朝掃描方向進行相對移動;照度變更構件,配置為相對於光學積分器可相對移動,將對第二區域進行曝光的曝光量與對第一區域進行曝光的曝光量的一者相對於另一者相對地變更,第二區域是被曝光基板上的第一曝光區域及第二曝光區域的各區域的一部分重複的區域,第一區域是第一曝光區域的其他部分及第二曝光區域的其他部分的區域;以及控制部,以使第一區域中的曝光量相對於第二區域中的曝光量相對地變大的方式,使照度變更構件移動。An exposure device includes: an illumination optical system having an optical integrator; a projection optical system; a substrate stage for moving an exposed substrate relative to the projection optical system in a scanning direction; an illumination changing component configured to be relatively movable relative to the optical integrator to relatively change an exposure amount for exposing a second area and an exposure amount for exposing a first area relative to the other, wherein the second area is an area where a part of each area of the first exposure area and the second exposure area on the exposed substrate overlaps, and the first area is an area of the other part of the first exposure area and the other part of the second exposure area; and a control unit for moving the illumination changing component in such a way that the exposure amount in the first area becomes relatively larger than the exposure amount in the second area.
Description
本發明是有關於一種曝光裝置、照明光學系統以及元件製造方法。 The present invention relates to an exposure device, an illumination optical system and a component manufacturing method.
作為用於將遮罩上的圖案原版曝光轉印至大型基板的裝置,已知有相對於投影光學系統對遮罩及基板進行相對掃描來進行曝光的掃掠型曝光裝置。藉由掃掠曝光,曝光視場於掃掠方向(掃描方向)上擴大,但亦已知有如下的曝光裝置,其為了進而在與掃掠方向交叉的方向(非掃掠方向)上亦擴大曝光視場,而使其曝光區域於非掃掠方向上重疊來進行多次掃掠曝光。 As a device for transferring the pattern original on the mask to a large substrate by exposure, a scanning exposure device is known that performs exposure by scanning the mask and the substrate relative to the projection optical system. By scanning exposure, the exposure field is expanded in the scanning direction (scanning direction), but there is also a known exposure device that performs multiple scanning exposures by overlapping the exposure area in the non-scanning direction in order to further expand the exposure field in the direction intersecting the scanning direction (non-scanning direction).
進而,亦已知有如下的方法:於非掃掠方向上並列地包括多個投影光學系統,一面使多個投影光學系統進行曝光的曝光視場的一部分重疊一面進行曝光,藉此利用一次掃描來將電子電路曝光轉印至基板上(例如專利文獻1)。 Furthermore, the following method is also known: multiple projection optical systems are arranged in parallel in the non-scanning direction, and the exposure is performed while overlapping a portion of the exposure fields of the multiple projection optical systems, thereby utilizing a single scan to transfer the exposure of the electronic circuit to the substrate (e.g., Patent Document 1).
[現有技術文獻] [Prior art literature]
[專利文獻] [Patent Literature]
專利文獻1:日本專利特開2016-54230號公報 Patent document 1: Japanese Patent Publication No. 2016-54230
根據第一形態,一種曝光裝置,其利用在第一時間內對 被曝光基板上的第一曝光區域進行曝光的第一曝光、及在與所述第一時間不同的第二時間內對所述被曝光基板上的第二曝光區域進行曝光的第二曝光,對所述被曝光基板進行曝光,所述曝光裝置包括:照明光學系統,具有光學積分器,供給照明光;投影光學系統;基板載台,以規定圖案於所述被曝光基板上得到曝光的方式,使所述被曝光基板相對於所述投影光學系統朝掃描方向進行相對移動;照度變更構件,在設置於被入射所述照明光的入射面與所述被曝光基板的上表面變成共軛的位置的所述光學積分器的入射面側,配置為相對於所述光學積分器可相對移動,以將對第二區域進行曝光的曝光量與對第一區域進行曝光的曝光量的一者相對於另一者進行相對地變更的方式,變更照明光的照度,所述第二區域是所述被曝光基板上的所述第一曝光區域及所述第二曝光區域的各區域的一部分重複的區域,所述第一區域是所述第一曝光區域的其他部分及所述第二曝光區域的其他部分的區域;以及控制部,控制所述照度變更構件相對於所述光學積分器的相對移動;所述控制部以使所述第一區域中的曝光量相對於所述第二區域中的曝光量相對地變大的方式,使所述照度變更構件相對於所述光學積分器進行相對移動。 According to a first aspect, an exposure device is provided, which uses a first exposure to expose a first exposure area on the exposed substrate within a first time, and a second exposure to expose a second exposure area on the exposed substrate within a second time different from the first time, to expose the exposed substrate, the exposure device comprising: an illumination optical system having an optical integrator for supplying illumination light; a projection optical system; a substrate stage for moving the exposed substrate relative to the projection optical system in a scanning direction in such a manner that a prescribed pattern is exposed on the exposed substrate; and an illumination changing component, which is arranged on the incident surface side of the optical integrator at a position where the incident surface of the illumination light is incident and becomes conjugate with the upper surface of the exposed substrate. The illumination light intensity of the illumination light can be changed by relatively changing the exposure amount of the second area and the exposure amount of the first area relative to the other, wherein the second area is a region where a part of each region of the first exposure area and the second exposure area on the exposed substrate overlaps, and the first area is a region of the other part of the first exposure area and the other part of the second exposure area; and a control unit, which controls the relative movement of the illumination intensity changing component relative to the optical integrator; the control unit moves the illumination intensity changing component relative to the optical integrator in a manner that the exposure amount in the first area becomes relatively larger than the exposure amount in the second area.
根據第二形態,一種曝光裝置,其利用在第一時間內對被曝光基板上的第一曝光區域進行曝光的第一曝光、及在與所述第一時間不同的第二時間內對所述被曝光基板上的第二曝光區域進行曝光的第二曝光,對所述被曝光基板進行曝光,所述曝光裝置包 括:照明光學系統,具有光學積分器,供給照明光;投影光學系統;基板載台,以規定圖案於所述被曝光基板上得到曝光的方式,使所述被曝光基板相對於所述投影光學系統朝掃描方向進行相對移動;照度變更構件,在設置於被入射所述照明光的入射面與所述被曝光基板的上表面變成共軛的位置的所述光學積分器的入射面側,配置為相對於所述光學積分器可相對移動,以變更對第二區域進行曝光的曝光量與對第一區域進行曝光的曝光量的一者對於另一者的曝光量比的方式,變更照明光的照度,所述第二區域是所述被曝光基板上的所述第一曝光區域及所述第二曝光區域的各區域的一部分重複的區域,所述第一區域是所述第一曝光區域的其他部分及所述第二曝光區域的其他部分的區域;以及控制部,控制所述照度變更構件相對於所述光學積分器的相對移動;所述控制部於所述基板載台相對於所述投影光學系統的移動過程中,使所述照度變更構件相對於所述光學積分器進行相對移動。 According to a second aspect, an exposure device is provided, which uses a first exposure to expose a first exposure area on the exposure substrate within a first time, and a second exposure to expose a second exposure area on the exposure substrate within a second time different from the first time, to expose the exposure substrate, the exposure device comprising: an illumination optical system having an optical integrator for supplying illumination light; a projection optical system; a substrate stage for moving the exposure substrate relative to the projection optical system in a scanning direction in such a manner that a prescribed pattern is exposed on the exposure substrate; an illumination changing member for moving the illumination light at an incident surface of the optical integrator disposed at a position where the incident surface of the illumination light is conjugated with the upper surface of the exposure substrate; The illumination light is changed by changing the exposure ratio of the exposure amount of the second area and the exposure amount of the first area to the other, wherein the second area is a region where a part of each region of the first exposure area and the second exposure area on the exposed substrate overlaps, and the first area is a region where the other part of the first exposure area and the other part of the second exposure area are overlapped; and a control unit controls the relative movement of the illumination changing component relative to the optical integrator; the control unit causes the illumination changing component to move relative to the optical integrator during the movement of the substrate stage relative to the projection optical system.
根據第三形態,一種曝光裝置,包括:投影光學系統;照明光學系統,具有光學積分器,對所述投影光學系統供給照明光;基板載台,以規定圖案於被曝光基板上得到曝光的方式,使所述被曝光基板相對於所述投影光學系統朝掃描方向進行相對移動;照度變更構件,相對於第一區域中的曝光量與第二區域中的曝光量的一者的曝光量,相對地變更另一者的曝光量,所述第一區域是於所述曝光中,藉由所述投影光學系統的掃描曝光視場而於時間上連續地得到曝光的所述被曝光基板上的區域,所述第二區域 是藉由所述掃描曝光視場而於時間上離散地得到曝光的區域;以及控制部,使所述照度變更構件相對於所述光學積分器,朝以光學方式對應於所述掃描方向的第一方向進行相對移動,所述光學積分器設置於所述照明光的入射面相對於所述被曝光基板上的所述掃描曝光視場變成共軛面的位置;所述控制部以使所述第一區域中的曝光量相對於所述第二區域中的曝光量相對地變大的方式,使所述照度變更構件相對於所述光學積分器進行相對移動。 According to a third aspect, an exposure device comprises: a projection optical system; an illumination optical system having an optical integrator for supplying illumination light to the projection optical system; a substrate stage for moving the exposed substrate relative to the projection optical system in a scanning direction in such a manner that a prescribed pattern is exposed on the exposed substrate; and an illumination changing component for relatively changing the exposure amount of a first area and a second area relative to the exposure amount of the other area, wherein the first area is the exposed area that is continuously exposed in time by the scanning exposure field of the projection optical system during the exposure. The second area is an area that is exposed discretely in time by the scanning exposure field; and a control unit causes the illumination changing component to move relative to the optical integrator in a first direction that optically corresponds to the scanning direction, the optical integrator being arranged at a position where the incident surface of the illumination light becomes a concentric surface relative to the scanning exposure field on the exposed substrate; the control unit causes the illumination changing component to move relative to the optical integrator in such a way that the exposure amount in the first area becomes relatively larger than the exposure amount in the second area.
根據第四形態,一種曝光裝置,包括:投影光學系統;照明光學系統,具有光學積分器,對所述投影光學系統供給照明光;基板載台,以規定圖案於被曝光基板上得到曝光的方式,使所述被曝光基板相對於所述投影光學系統朝掃描方向進行相對移動;照度變更構件,在設置於被入射所述照明光的入射面與所述被曝光基板的上表面變成共軛的位置的所述光學積分器的入射面側,配置為相對於所述光學積分器可相對移動,以變更第一區域中的曝光量與第二區域中的曝光量的一者對於另一者的曝光量比的方式,變更所述照明光的照度,所述第一區域是藉由所述投影光學系統的掃描曝光視場而於時間上連續地得到曝光的所述被曝光基板上的區域,所述第二區域是藉由所述掃描曝光視場而於時間上離散地得到曝光的區域;以及控制部,控制所述照度變更構件相對於所述光學積分器的相對移動;所述控制部於所述基板載台相對於所述投影光學系統的移動過程中,使所述照度變更構件相對於所述光學積分器進行相對移動。 According to a fourth aspect, an exposure device comprises: a projection optical system; an illumination optical system having an optical integrator for supplying illumination light to the projection optical system; a substrate stage for causing the exposed substrate to move relative to the projection optical system in a scanning direction in a manner such that a prescribed pattern is exposed on the exposed substrate; and an illumination changing component disposed on the incident surface side of the optical integrator at a position where the incident surface of the illumination light is incident on is conjugated with the upper surface of the exposed substrate, and configured to be relatively movable relative to the optical integrator to change the exposure amount in a first area and the exposure amount in a second area. The illumination light is changed in a manner of changing the illumination light in a ratio of one exposure amount to the other exposure amount in the projection optical system, wherein the first area is an area on the exposed substrate that is continuously exposed in time by the scanning exposure field of view of the projection optical system, and the second area is an area that is discretely exposed in time by the scanning exposure field of view; and a control unit controls the relative movement of the illumination changing component relative to the optical integrator; the control unit causes the illumination changing component to move relative to the optical integrator during the movement of the substrate stage relative to the projection optical system.
根據第五形態,一種元件製造方法,包括:利用第一~第四的任一形態的曝光裝置對被曝光基板進行曝光處理;以及對經曝光的所述被曝光基板進行顯影處理。 According to the fifth aspect, a device manufacturing method includes: performing an exposure process on a substrate to be exposed using an exposure device of any one of the first to fourth aspects; and performing a development process on the exposed substrate to be exposed.
根據第六形態,一種照明光學系統,為於對基板照射照明光的曝光裝置中使用的照明光學系統,在第一時間內對朝掃描方向移動的物體上的第一照明區域照射照明光,在與所述第一時間不同的第二時間內對朝所述掃描方向移動的所述物體上的第二照明區域照射所述照明光,所述照明光學系統包括:光學積分器,設置於被入射所述照明光的入射面與所述基板的上表面變成共軛的位置;照度變更構件,將對第二區域照射的所述照明光的照度相對於對第一區域照明的所述照明光的照度進行相對地變更,所述第二區域是於所述物體上被照射所述照明光的照明區域之中,所述第一照明區域及所述第二照明區域的各照明區域的一部分重複的區域,所述第一區域是所述第一照明區域的其他部分及所述第二照明區域的其他部分的照明區域;以及控制部,相對於所述光學積分器,控制所述照度變更構件的相對移動;所述控制部於基板載台相對於投影光學系統的移動過程中,使所述照度變更構件相對於所述光學積分器進行相對移動。 According to a sixth aspect, an illumination optical system is an illumination optical system used in an exposure device for irradiating illumination light onto a substrate, wherein the illumination light is irradiated onto a first illumination area on an object moving in a scanning direction within a first time, and the illumination light is irradiated onto a second illumination area on the object moving in the scanning direction within a second time different from the first time, wherein the illumination optical system comprises: an optical integrator disposed at a position where an incident surface of the illumination light is conjugated with an upper surface of the substrate; an illumination changing component for changing the illumination of the illumination light irradiated onto the second area relative to the illumination of the illumination light irradiated onto the first area; The second area is an area where a part of each of the first illumination area and the second illumination area overlaps in the illumination area on the object irradiated with the illumination light, and the first area is an illumination area of the other parts of the first illumination area and the other parts of the second illumination area; and a control unit controls the relative movement of the illumination changing component relative to the optical integrator; the control unit causes the illumination changing component to move relative to the optical integrator during the movement of the substrate stage relative to the projection optical system.
根據第七形態,一種照明光學系統,為於對基板照射照明光的曝光裝置中使用的照明光學系統,在第一時間內對朝掃描方向移動的物體上的第一照明區域照射照明光,在與所述第一時間不同的第二時間內對朝所述掃描方向移動的所述物體上的第二照明 區域照射所述照明光,所述照明光學系統包括:光學積分器,設置於被入射所述照明光的入射面與所述基板的上表面變成共軛的位置;照度變更構件,變更對第二區域照明的所述照明光的照度、及對第一區域照明的所述照明光的照度的一者的照度與另一者的照度的照度比,所述第二區域是所述基板上的所述第一照明區域及所述第二照明區域的各區域的一部分重複的區域,所述第一區域是所述第一照明區域的其他部分及所述第二照明區域的其他部分的區域;以及控制部,控制所述照度變更構件相對於所述光學積分器的相對移動;所述控制部於基板載台相對於投影光學系統的移動過程中,使所述照度變更構件相對於所述光學積分器進行相對移動。 According to a seventh aspect, an illumination optical system is an illumination optical system used in an exposure device for irradiating illumination light onto a substrate, wherein the illumination light is irradiated onto a first illumination area on an object moving in a scanning direction within a first time, and the illumination light is irradiated onto a second illumination area on the object moving in the scanning direction within a second time different from the first time, wherein the illumination optical system comprises: an optical integrator disposed at a position where an incident surface of the illumination light is conjugated with an upper surface of the substrate; an illumination changing member for changing the illumination intensity of the illumination light irradiating the second area, and an illumination changing member for changing the illumination intensity of the illumination light irradiating the second area. The illumination ratio of one of the illuminations of the illumination light of the first area illumination to the other illumination, the second area is an area where a part of each area of the first illumination area and the second illumination area on the substrate overlaps, and the first area is an area of the other part of the first illumination area and the other part of the second illumination area; and a control unit, controlling the relative movement of the illumination changing component relative to the optical integrator; the control unit causes the illumination changing component to move relative to the optical integrator during the movement of the substrate stage relative to the projection optical system.
根據第八形態,一種曝光裝置,包括:第六或第七形態的照明光學系統;以及基板載台,保持所述基板,以所述物體所具有的規定圖案於所述基板上得到曝光的方式,使所述基板相對於所述照明光朝第一方向進行相對移動。 According to the eighth aspect, an exposure device comprises: the illumination optical system of the sixth or seventh aspect; and a substrate stage, which holds the substrate and moves the substrate relative to the illumination light in a first direction in such a manner that a prescribed pattern of the object is exposed on the substrate.
1:光源 1: Light source
2:橢圓鏡 2: Oval mirror
3:偏轉鏡 3: Deflecting mirror
4:中繼透鏡 4: Relay lens
5:偏轉鏡 5: Deflecting mirror
6:中繼透鏡 6: Relay lens
7:光纖 7: Optical fiber
8a、8b:輸入透鏡 8a, 8b: Input lens
9a、9b、9ca、9cb、9cc:減光構件保持部 9a, 9b, 9ca, 9cb, 9cc: dimming component holding part
10a~10e:減光構件(照度變更構件) 10a~10e: dimming components (illuminance changing components)
10ca1、10ca2:第三減光構件 10ca1, 10ca2: The third dimming component
10cb1、10cb2:第一端部減光構件 10cb1, 10cb2: first end dimming component
10cc1、10cc2:第二端部減光構件 10cc1, 10cc2: Second end dimming component
11a~11e:複眼透鏡(光學積分器) 11a~11e: Compound eye lens (optical integrator)
11ci:入射面 11ci: Incident surface
12a~12e:聚光透鏡 12a~12e: Focusing lens
13:移動鏡 13: Moving mirror
14:雷射干涉計 14: Laser interferometer
15:遮罩 15: Mask
16:遮罩載台 16: Mask carrier
17:遮罩載台平台 17: Masking platform
19a~19e:投影光學系統 19a~19e: Projection optical system
20:中間像面 20: Middle image plane
21a~21e:視場光圈 21a~21e: Field of view aperture
21bo、21co:開口部 21bo, 21co: opening part
22:基板 22: Substrate
23:位置檢測光學系統 23: Position detection optical system
24:移動鏡 24: Moving mirror
25:雷射干涉計 25: Laser interferometer
26:照度感測器 26: Illuminance sensor
27:基板載台 27: Substrate carrier
28:基板載台平台 28: Substrate carrier platform
50:控制部 50: Control Department
71:入射側 71: Incident side
72a、72b:射出側 72a, 72b: ejection side
91a、91b、91c:滑件 91a, 91b, 91c: Slides
100:曝光裝置 100:Exposure device
110:透鏡元件 110: Lens element
CP:共軛面 CP: Conjugate Surface
E、E1:曝光量 E, E1: Exposure
ILa~ILe:照明光學系統 ILa~ILe: Illumination optical system
IPIc:曝光視場對應區域 IPIc: Exposure field corresponding area
IXa、IXb、PAXa、PAXb:光軸 IXa, IXb, PAXa, PAXb: optical axis
MIa~MIe:照明視場 MIa~MIe: lighting field of view
MIb2、MIc2:照明光 MIb2, MIc2: lighting
Oa~Od:重疊部 Oa~Od: Overlapping part
PIa~PIe:曝光視場 PIa~PIe: Exposure field of view
PIbc、PIcc:中心區域 PIbc, PIcc: Central area
PIbl、PIcl:左端區域 PIbl, PIcl: left end area
PIbr、PIcr:右端區域 PIbr, PIcr: right end area
PX:間距 PX: Pitch
Sa~Se:非重疊部 Sa~Se: non-overlapping part
SIa~SIe:掃描曝光視場 SIa~SIe: Scanning exposure field of view
SigA、SigB、SigCa、SigCb、SigCc:控制訊號 SigA, SigB, SigCa, SigCb, SigCc: control signals
Wa、Wb、Ws、Wo:寬度 Wa, Wb, Ws, Wo: width
X、Y、Z:方向 X, Y, Z: direction
圖1是表示第一實施方式的曝光裝置的構成的側面圖。 FIG1 is a side view showing the structure of the exposure device of the first embodiment.
圖2是表示第一實施方式的曝光裝置的一部分的立體圖。 FIG2 is a perspective view showing a portion of the exposure device of the first embodiment.
圖3是將第一實施方式的曝光裝置的自複眼透鏡(fly-eye lens)至遮罩為止放大表示的立體圖。 FIG3 is a three-dimensional diagram showing the exposure device of the first embodiment from the fly-eye lens to the mask in an enlarged manner.
圖4是表示第一實施方式的曝光裝置的遮罩上的視場與基板
上的視場的關係的圖。圖4的(a1)、圖4的(a2)及圖4的(a3)分別是表示圖1中的投影光學系統19c中的遮罩上的視場、投影光學系統內的視場光圈、基板上的視場的圖,圖4的(b1)、圖4的(b2)及圖4的(b3)分別是表示圖1中的投影光學系統19b中的遮罩上的視場、投影光學系統內的視場光圈、基板上的視場的圖。
FIG4 is a diagram showing the relationship between the field of view on the mask and the field of view on the substrate of the exposure device of the first embodiment. FIG4 (a1), FIG4 (a2), and FIG4 (a3) are diagrams showing the field of view on the mask in the projection
圖5是表示第一實施方式的曝光裝置對基板進行掃描曝光時,照射至基板上的曝光能量、及感光材料中的實效感光量的一例的圖。圖5的(a)是表示各投影光學系統的基板上的曝光視場的圖,圖5的(b)是表示形成於基板22上的曝光區域的圖,圖5的(c)是表示照射至基板上的曝光量的一例的圖,圖5的(d)是表示照射至基板上的曝光量的另一例的圖。
FIG. 5 is a diagram showing an example of exposure energy irradiated onto a substrate and an effective light-sensitive amount in a photosensitive material when the exposure device of the first embodiment performs scanning exposure on a substrate. FIG. 5 (a) is a diagram showing the exposure field of view on a substrate of each projection optical system, FIG. 5 (b) is a diagram showing an exposure area formed on a
圖6是自光源側觀察第一實施方式的曝光裝置的複眼透鏡、減光構件及減光構件保持部的圖。 FIG6 is a diagram of the compound eye lens, the light-reducing component, and the light-reducing component holding portion of the exposure device of the first embodiment, viewed from the light source side.
(曝光裝置的第一實施方式) (First embodiment of the exposure device)
圖1是表示第一實施方式的曝光裝置100的側面圖。如後述般,曝光裝置100包括五根投影光學系統19a~19e,但於圖1中,僅表示作為其中的兩根的投影光學系統19a、投影光學系統19b。
FIG. 1 is a side view of an
投影光學系統19a~投影光學系統19e是形成投影倍率(橫倍率)為+1倍的正立正像的光學系統,將描繪於遮罩15的圖案曝光轉印至形成於基板22的上表面的感光材料。再者,可將形成有
感光材料的基板22解釋成被曝光基板。
The projection
基板22經由未圖示的基板固定器而由基板載台27來保持。基板載台27藉由未圖示的線性馬達等,而於基板載台平台28上朝X方向進行掃描,並且可朝Y方向進行移動。基板載台27的X方向的位置經由安裝於基板載台27的移動鏡24的位置而由雷射干涉計25來測量。基板載台27的Y方向的位置亦同樣由未圖示的雷射干涉計來測量。
The
位置檢測光學系統23檢測形成於基板22上的對準標記等既存的圖案的位置。
The position detection
遮罩15由遮罩載台16來保持。遮罩載台16藉由未圖示的線性馬達等,而於遮罩載台平台17上朝X方向進行掃描,並且可朝Y方向進行移動。遮罩載台16的X方向的位置經由安裝於遮罩載台16的移動鏡13的位置而由雷射干涉計14來測量。遮罩載台16的Y方向的位置亦同樣由未圖示的雷射干涉計來測量。
The
未圖示的控制系統根據雷射干涉計14、雷射干涉計25等的測量值,控制未圖示的線性馬達等來控制遮罩載台16及基板載台27的XY位置。於朝基板22上的遮罩圖案的曝光時,未圖示的控制系統在保持由投影光學系統19a~投影光學系統19e所形成的成像關係的狀態下,使遮罩15與基板22以大致相同速度,相對於投影光學系統19a~投影光學系統19e相對地朝X方向進行掃描。
The control system (not shown) controls the linear motor (not shown) to control the XY positions of the
於本說明書中,將於曝光時,基板22被掃描的方向(X方向)
亦稱為「掃描方向」及「掃掠方向」。另外,將基板22的面內所包含的與X方向正交的方向(Y方向)亦稱為「非掃描方向」及「非掃掠方向」。Z方向是與X方向及Y方向正交的方向。
In this specification, the direction in which the
再者,圖1及以下的各圖中由箭頭所示的X方向、Y方向、及Z方向將其箭頭所指示的方向設為+方向。 Furthermore, in Figure 1 and the following figures, the X direction, Y direction, and Z direction indicated by arrows are set as the + direction.
圖2是表示第一實施方式的曝光裝置100的自照明光學系統ILa~照明光學系統ILe的下游部至基板22為止的部分的立體圖。以下,亦參照圖2繼續進行說明。
FIG. 2 is a perspective view showing the portion of the
如圖2所示,五個投影光學系統19a~19e之中,三個投影光學系統19a、19c、19e(以下,亦總稱為或個別地稱為「第一行的投影光學系統19F」)於Y方向上排列配置。而且,兩個投影光學系統19b、19d(以下,亦總稱為或個別地稱為「第二行的投影光學系統19R」)於Y方向上排列,與第一行的投影光學系統19F相比配置於+X側。
As shown in FIG2 , among the five projection
第一行的投影光學系統19F的各投影光學系統以其光軸於Y方向上以規定的間隔分離的方式配置。第二行的投影光學系統19R的各光學系統亦與第一行的投影光學系統19F同樣地配置。另外,投影光學系統19b以其光軸的Y方向的位置與將投影光學系統19a與投影光學系統19c各自的光軸連結的直線的大致中心一致的方式配置。另外,投影光學系統19d亦與投影光學系統19b同樣地配置。
Each projection optical system of the first row projection optical system 19F is configured in such a manner that its optical axis is separated at a predetermined interval in the Y direction. Each optical system of the second row projection optical system 19R is configured in the same manner as the projection optical system 19F in the first row. In addition, projection
第一實施方式的曝光裝置100對應於各投影光學系統
19a~19e的各個,包括多個照明光學系統ILa~ILe。作為一例,如圖1所示,對應於投影光學系統19a的照明光學系統ILa沿著光軸IXa,包括輸入透鏡8a、複眼透鏡11a及聚光透鏡12a。其他照明光學系統ILb~ILe亦同樣地包括輸入透鏡8b~輸入透鏡8e、複眼透鏡11b~複眼透鏡11e、及聚光透鏡12b~聚光透鏡12e。再者,如上所述,於圖2中僅表示各照明光學系統ILa~ILe中的複眼透鏡11a~複眼透鏡11e、及聚光透鏡12a~聚光透鏡12e。
The
再者,於作為側面圖的圖1中,投影光學系統19c~投影光學系統19e由於X方向的位置與投影光學系統19a或投影光學系統19b重疊,因此未圖示。同樣地,照明光學系統ILc~照明光學系統ILe亦由於X方向的位置與照明光學系統ILa或照明光學系統ILb重疊,因此未圖示。
Furthermore, in FIG. 1 which is a side view, the projection
自燈等光源1供給的照明光經由橢圓鏡2、偏轉鏡3、中繼透鏡4、偏轉鏡5、中繼透鏡6、光纖7等導光光學系統而供給至各照明光學系統ILa~ILe。光纖7將已入射一個入射側71的照明光大致均等地進行分支,並朝五個射出側72a~72e射出。已自光纖7的五個射出側72a~72e分別射出的照明光入射各照明光學系統ILa~ILe中的輸入透鏡8a~輸入透鏡8e。而且,照明光進而經過複眼透鏡11a~複眼透鏡11e、及聚光透鏡12a~聚光透鏡12e,而照射至遮罩15上的各照明區域MIa~MIe。
The illumination light supplied from the
複眼透鏡11a~複眼透鏡11e配置於其入射側面(輸入透鏡8a~輸入透鏡8e側的面)變成共軛面CP的位置,所述共軛
面CP經由投影光學系統19a~投影光學系統19e、聚光透鏡12a~聚光透鏡12e及複眼透鏡11a~複眼透鏡11e,而與基板22的上表面(載置基板22的基板固定器的上表面或其附近)為共軛(成像關係)。
The
作為一例,圖3是將照明光學系統ILc中所包含的複眼透鏡11c與聚光透鏡12c、及遮罩15上的照明區域MIc放大表示的立體圖。
As an example, FIG3 is a three-dimensional diagram showing an enlarged view of the
複眼透鏡11c是將透鏡元件110於X方向及Y方向上排列多個來形成,所述透鏡元件110具有與照明區域MIc相似形狀的於Y方向上長的長方形的剖面形狀(XY面內的形狀)。各透鏡元件110的入射面11ci(上方的面,即+Z側的面)藉由包含各透鏡元件110及聚光透鏡12c的光學系統,而變成相對於遮罩15上的照明區域MIc(載置遮罩15的遮罩載台的上表面或其附近)的共軛面CP。因此,所述入射面11ci亦是相對於基板22上的曝光視場PIc的共軛面CP。照射至各個透鏡元件110的入射面的照明光重疊地照射至遮罩15上的照明區域MIc。藉此,照明區域MIc內的照明光的照度被大致均勻化。
The
除照明光學系統ILc以外的其他照明光學系統ILa~ILe的構成亦與圖3中所示的構成相同。 The configurations of the other illumination optical systems ILa~ILe except the illumination optical system ILc are the same as those shown in FIG. 3.
複眼透鏡11a~複眼透鏡11e是將照明光重疊地照射至各個照明區域MIa~MIe的光學積分器的一例。
於複眼透鏡11a~複眼透鏡11e的入射面11ai~入射面11ei
側(輸入透鏡8a~輸入透鏡8e側)配置有後述的減光構件10a~減光構件10e,所述減光構件10a~減光構件10e由減光構件保持部9a~減光構件保持部9e來保持。
The dimming
為了形成正立正像的像,投影光學系統19a~投影光學系統19e分別包含例如二次成像型的光學系統。於此情況下,藉由構成各投影光學系統19a~19e的上半部分的光學系統,於位於各投影光學系統19a~19e的光軸PAXa~光軸PAXe的方向(Z方向)的中間附近的中間像面20,形成遮罩15的圖案的中間像。中間像由構成各投影光學系統19a~19e的下半部分的光學系統再次進行成像,而於基板22上形成遮罩15的圖案的像。
In order to form an upright image, the projection
中間像面20與基板22為共軛,因此於各投影光學系統19a~19e內的中間像面20分別配置視場光圈21a~視場光圈21e,藉此可規定基板22上的各投影光學系統19a~19e的曝光視場PIa~曝光視場PIe。
The
圖4是表示遮罩15上的照明區域MIa~照明區域MIe、與視場光圈21a~視場光圈21e、及曝光視場PIa~曝光視場PIe的關係的圖。
FIG. 4 is a diagram showing the relationship between the illumination area MIa to the illumination area Mie on the
圖4的(a1)是表示對應於投影光學系統19c的遮罩15上的照明區域MIc的圖,照明區域MIc變成與複眼透鏡11c的透鏡元件110的剖面形狀相似的長方形。
(a1) of FIG. 4 is a diagram showing the illumination area MIc on the
圖4的(a2)是表示投影光學系統19c內的視場光圈21c與照射至視場光圈21c的照明光MIc2的圖。作為遮罩15上的照
明區域MIc的中間像的由虛線表示的照明光MIc2照射至視場光圈21c。照明光MIc2之中,已照射至視場光圈21c的遮光部(由斜線表示的部分)的照明光由視場光圈21c來遮光。另一方面,透過了視場光圈21c的開口部21co的照明光藉由構成投影光學系統19c的下半部分的光學系統而再次於基板22上進行成像,於基板22上形成曝光視場PIc。
(a2) of Fig. 4 is a diagram showing the
圖4的(a3)表示基板22上的曝光視場PIc。
(a3) of Figure 4 shows the exposure field PIc on the
作為一例,當投影光學系統19c~投影光學系統19e包含全折射光學系統時,作為中間像的照明光MIc2是相對於照明區域MIc的倒立正像(像的X方向及Y方向均反轉,並非鏡像的像),曝光視場PIc變成相對於視場光圈21c的倒立正像。因此,如圖4的(a2)及圖4的(a3)所示,視場光圈21c的開口部21co的形狀、及曝光視場PIc的形狀相互與環繞Z軸旋轉180度而成的形狀一致。
As an example, when the projection
作為一例,曝光視場PIc是與Y方向平行的兩邊中的短邊位於+X側,長邊位於-X側的梯形。此處,將曝光視場PIc之中,由+X側的短邊的全部與-X側的長邊的一部分包圍的長方形的區域稱為中心區域PIcc。另一方面,將曝光視場PIc之中,不包含於中心區域PIcc中的+Y方向的端部稱為左端區域PIcl,將曝光視場PIc之中,不包含於中心區域PIcc中的-Y方向的端部稱為右端區域PIcr。 As an example, the exposure field of view PIc is a trapezoid in which the short side of the two sides parallel to the Y direction is located on the +X side and the long side is located on the -X side. Here, a rectangular area in the exposure field of view PIc surrounded by the entire short side on the +X side and a part of the long side on the -X side is called a central area PIcc. On the other hand, the end of the exposure field of view PIc in the +Y direction that is not included in the central area PIcc is called the left end area PIcl, and the end of the exposure field of view PIc in the -Y direction that is not included in the central area PIcc is called the right end area PIcr.
將中心區域PIcc的Y方向的長度(寬度)稱為寬度Ws,左 端區域PIcl及右端區域PIcr的Y方向的長度(寬度)相等,將其稱為寬度Wo。 The length (width) of the center area PIcc in the Y direction is called the width Ws, and the length (width) of the left end area PIcl and the right end area PIcr in the Y direction is equal and is called the width Wo.
另一方面,圖4的(b1)~圖4的(b3)分別是表示對應於投影光學系統19b的遮罩15上的照明區域MIb、視場光圈21b、及曝光視場PIb的圖。如圖4的(b2)所示,於投影光學系統19b中,視場光圈21b的開口部21bo的形狀變成將投影光學系統19c的視場光圈21c的開口部21co的形狀於X方向上反轉而成的形狀。其結果,如圖4的(b3)所示,投影光學系統19b的曝光視場PIb的形狀變成將投影光學系統19c的曝光視場PIc的形狀於X方向上反轉而成的形狀。
On the other hand, FIG. 4 (b1) to FIG. 4 (b3) are diagrams respectively showing the illumination area MIb, the
與所述曝光視場PIc同樣地,關於曝光視場PIb,亦將由-X側的短邊的全部與+X側的長邊的一部分包圍的長方形的區域稱為中心區域PIbc。將曝光視場PIb之中,不包含於中心區域PIbc中的+Y方向的端部稱為左端區域PIbl,將曝光視場PIb之中,不包含於中心區域PIbc中的-Y方向的端部稱為右端區域PIbr。 Similar to the exposure field of view PIc, the rectangular area surrounded by the entire short side on the -X side and a part of the long side on the +X side of the exposure field of view PIb is called the central area PIbc. The end of the exposure field of view PIb in the +Y direction that is not included in the central area PIbc is called the left end area PIbl, and the end of the exposure field of view PIb in the -Y direction that is not included in the central area PIbc is called the right end area PIbr.
圖5的(a)是表示基板22上的五個投影光學系統19a~19e的各曝光視場PIa~PIe的圖。作為第一行的投影光學系統19F的投影光學系統19a、投影光學系統19e的曝光視場PIa、曝光視場PIe與所述投影光學系統19c的曝光視場PIc同樣地,是與Y方向平行的兩邊中的短邊位於+X側,長邊位於-X側的梯形。另一方面,作為第二行的投影光學系統19R的投影光學系統19d的曝光視場PId與所述投影光學系統19b的曝光視場PIb同樣地,是
與Y方向平行的兩邊中的短邊位於-X側,長邊位於+X側的梯形。
(a) of FIG. 5 is a diagram showing exposure fields PIa to PIe of the five projection
關於投影光學系統19a、投影光學系統19d、投影光學系統19e的曝光視場PIa、曝光視場PId、曝光視場PIe,亦可與所述曝光視場PIb、曝光視場PIc同樣地對中心區域PIac、中心區域PIdc、中心區域PIec,及左端區域PIal、左端區域PIdl、左端區域PIel,右端區域PIar、右端區域PIdr、右端區域PIer進行定義。但是,配置於-Y方向的端部的曝光視場PIa藉由視場光圈21a,以所述-Y方向的端部變成與X方向平行的方式遮蔽照明光,因此不存在右端區域PIar。另外,配置於+Y方向的端部的曝光視場PIe藉由視場光圈21e,以所述+Y方向的端部變成與X方向平行的方式遮蔽照明光,因此不存在左端區域PIal。再者,亦可使視場光圈21a及視場光圈21e的形狀與視場光圈21c的形狀不同,亦可使用其他構件,以於曝光視場PIa中不存在右端區域PIar的方式遮蔽照明光。
Regarding the exposure fields of view PIa, PId, and PIe of the projection
各曝光視場PIa~PIe的各中心區域PIac~PIec的Y方向的長度均與寬度Ws相等,左端區域PIal~左端區域PIdl及右端區域PIbr~右端區域PIer的長度均與寬度Wo相等。而且,於曝光視場PIa~曝光視場PIe中的在Y方向上鄰接的兩個曝光視場中,鄰接的左端區域PIal~左端區域PIdl與右端區域PIbr~右端區域PIer的Y方向的位置一致。 The length of each central area PIac~PIec of each exposure field PIa~PIe in the Y direction is equal to the width Ws, and the length of the left end area PIal~left end area PIdl and the right end area PIbr~right end area PIer are equal to the width Wo. Moreover, in the two exposure fields adjacent in the Y direction in the exposure field PIa~exposure field PIe, the Y direction positions of the adjacent left end area PIal~left end area PIdl and right end area PIbr~right end area PIer are consistent.
各曝光視場PIa~PIe的此種形狀及位置的設定可藉由設定投影光學系統19a~投影光學系統19e的配置位置、及視場光圈21a
~視場光圈21e的開口部21ao~開口部21eo的形狀及位置來進行。
The shape and position of each exposure field PIa~PIe can be set by setting the configuration position of the projection
圖5的(b)是表示當基板22藉由基板載台27而於X方向上被掃描,藉由圖5的(a)中所示的曝光視場PIa~曝光視場PIe而得到曝光時,形成於基板22上的曝光區域的圖。於基板22上,利用掃描曝光形成藉由各曝光視場PIa~PIe而得到曝光的掃描曝光視場SIa~掃描曝光視場SIe。於圖5的(b)中,第一行的投影光學系統19a、投影光學系統19c、投影光學系統19e形成的掃描曝光視場SIa、掃描曝光視場SIc、掃描曝光視場SIe由雙點劃線表示,第二行的投影光學系統19b、投影光學系統19d形成的掃描曝光視場SIb、掃描曝光視場SId由點劃線表示。
FIG5(b) is a diagram showing an exposure area formed on the
該些掃描曝光視場SIa~SIe是曝光視場PIa~曝光視場PIe藉由朝X方向的掃描曝光而於X方向上延長而成者。各掃描曝光視場SIa~SIe的Y方向(非掃描方向)的端部分別與鄰接的其他掃描曝光視場SIa~SIe的非掃描方向的端部重疊。例如,由左端區域PIal所形成的曝光區域與由右端區域PIbr所形成的曝光區域一致。於其他曝光區域中亦同樣如此,因此省略說明。 These scanning exposure fields SIa~SIe are formed by extending the exposure fields PIa~PIe in the X direction by scanning exposure in the X direction. The ends of each scanning exposure field SIa~SIe in the Y direction (non-scanning direction) overlap with the ends of other adjacent scanning exposure fields SIa~SIe in the non-scanning direction. For example, the exposure area formed by the left end area PIal is consistent with the exposure area formed by the right end area PIbr. The same is true in other exposure areas, so the description is omitted.
以下,將Y方向之中,藉由各掃描曝光視場SIa~SIe的一個而得到曝光的部分亦稱為非重疊部Sa~非重疊部Se,將各掃描曝光視場SIa~SIe的兩個重疊而得到曝光的部分亦稱為重疊部Oa~重疊部Od。 Hereinafter, the portion exposed by one of the scanning exposure fields SIa to SIe in the Y direction is also referred to as the non-overlapping portion Sa to the non-overlapping portion Se, and the portion exposed by overlapping two of the scanning exposure fields SIa to SIe is also referred to as the overlapping portion Oa to the overlapping portion Od.
曝光視場PIa~曝光視場PIe之中,左端區域PIal~左端區域 PIdl與右端區域PIbr~右端區域PIer是對應於重疊部Oa~重疊部Od的曝光視場,中心區域PIac~中心區域PIec是對應於非重疊部Sa~非重疊部Se的曝光視場。 Among the exposure fields PIa to PIe, the left end area PIal to the left end area PIdl and the right end area PIbr to the right end area PIer correspond to the exposure fields of the overlapping portion Oa to the overlapping portion Od, and the center area PIac to the center area PIec correspond to the exposure fields of the non-overlapping portion Sa to the non-overlapping portion Se.
各掃描曝光視場SIa~SIe的兩個重疊而得到曝光的重疊部Oa~重疊部Od首先由第一行的投影光學系統19a、投影光學系統19c、投影光學系統19e進行曝光,其後由第二行的投影光學系統19b、投影光學系統19d進行曝光,因此於時間上分割來進行曝光。換言之,於時間上離散地對重疊部Oa~重疊部Od進行曝光。相對於此,非重疊部Sa~非重疊部Se是藉由掃描曝光視場SIa~掃描曝光視場SIe中的一個掃描曝光視場而得到曝光的區域,且是於時間上不被分割而連續地得到曝光的區域。
The overlapping parts Oa to Od exposed by the two overlapping parts of each scanning exposure field SIa to SIe are first exposed by the projection
亦可將於時間上連續地進行曝光的非重疊部Sa~非重疊部Se解釋成第一區域。另一方面,亦可將於時間上離散地進行曝光的重疊部Oa~重疊部Od解釋成第二區域。 The non-overlapping portion Sa to the non-overlapping portion Se that are exposed continuously in time can also be interpreted as the first region. On the other hand, the overlapping portion Oa to the overlapping portion Od that are exposed discretely in time can also be interpreted as the second region.
圖5的(c)是表示藉由朝X方向的掃描曝光而於基板22上所曝光的曝光量E的圖表。圖表的縱軸是曝光量的座標,橫軸是Y方向的座標。如圖5的(c)所示,於Y方向的各微小區間內將各曝光視場PIa~PIe在X方向上累計所得的值相等、且各曝光視場PIa~PIe內的照度藉由複眼透鏡11的作用等而均勻,因此基板22上的曝光量E變成固定的值E1。
FIG5(c) is a graph showing the exposure amount E exposed on the
即,Y方向之中,非重疊部Sa~非重疊部Se中的曝光量E與重疊部Oa~重疊部Od中的曝光量E均變成E1而相等。 That is, in the Y direction, the exposure amount E in the non-overlapping part Sa~non-overlapping part Se and the exposure amount E in the overlapping part Oa~overlapping part Od both become E1 and are equal.
但是,例如當掃描曝光視場SIa、掃描曝光視場SIc、掃描曝光視場SIe與掃描曝光視場SIb、掃描曝光視場SId自圖5的(a)的狀態起,相互於Y方向上產生了位置偏離時,重疊部Oa~重疊部Od中的曝光量變得與非重疊部Sa~非重疊部Se中的曝光量E1不同。例如,當第一行的投影光學系統19a、投影光學系統19c、投影光學系統19e的掃描曝光視場SIa、掃描曝光視場SIc、掃描曝光視場SIe與第二行的投影光學系統19b、投影光學系統19d的掃描曝光視場SIb、掃描曝光視場SId相互於Y方向上產生了位置偏離時,產生此種現象。或者,於如被曝光基板22因由製程所產生的熱等理由而變形,為了校正該變形,使基板載台27朝自X方向偏離的方向進行掃描來進行曝光的情況下,亦產生此種現象。
However, for example, when the scanning exposure fields SIa, SIc, SIe and the scanning exposure fields SIb and SId are mutually offset in the Y direction from the state of (a) in FIG5 , the exposure amount in the overlapping portion Oa to the overlapping portion Od becomes different from the exposure amount E1 in the non-overlapping portion Sa to the non-overlapping portion Se. For example, this phenomenon occurs when the scanning exposure fields SIa, SIc, and SIe of the projection
圖5的(d)是表示重疊部Oa~重疊部Od中的曝光量與非重疊部Sa~非重疊部Se中的曝光量E1不同時的曝光量E的圖表。 (d) of Figure 5 is a graph showing the exposure amount E when the exposure amount in the overlapping portion Oa to the overlapping portion Od is different from the exposure amount E1 in the non-overlapping portion Sa to the non-overlapping portion Se.
作為一例,圖5的(d)表示掃描曝光視場SIb、掃描曝光視場SId相對於掃描曝光視場SIa、掃描曝光視場SIc、掃描曝光視場SIe,於-Y方向上偏離時的例子。於此情況下,相對於曝光量E1,於重疊部Oa、重疊部Oc中曝光量增加,於重疊部Ob、重疊部Od中曝光量減少。雖然未圖示,但當掃描曝光視場SIb、掃描曝光視場SId相對於掃描曝光視場SIa、掃描曝光視場SIc、掃描曝光視場SIe,於+Y方向上偏離時,相對於曝光量E1,於重疊部 Oa、重疊部Oc中曝光量減少,於重疊部Ob、重疊部Od中曝光量增加。 As an example, Fig. 5(d) shows an example in which the scanning exposure field SIb and the scanning exposure field SId are offset in the -Y direction relative to the scanning exposure field SIa, the scanning exposure field SIc, and the scanning exposure field SIe. In this case, the exposure amount is increased in the overlapping portion Oa and the overlapping portion Oc, and the exposure amount is reduced in the overlapping portion Ob and the overlapping portion Od, relative to the exposure amount E1. Although not shown, when the scanning exposure field SIb and the scanning exposure field SId deviate in the +Y direction relative to the scanning exposure field SIa, the scanning exposure field SIc, and the scanning exposure field SIe, the exposure in the overlapping part Oa and the overlapping part Oc decreases, and the exposure in the overlapping part Ob and the overlapping part Od increases relative to the exposure amount E1.
當以如圖5的(d)所示的曝光量進行了曝光時,於重疊部Oa~重疊部Od與非重疊部Sa~非重疊部Se中,基板22上的感光材料的反應的程度不同,因此已轉印至感光材料的圖案的線寬或厚度變化。再者,除所述情況以外,例如於被曝光基板22因由製程所產生的熱等理由而已局部地變形的情況下,亦產生相同的現象。但是,於此情況下,於被曝光基板22整個面中,不變成圖5的(d)的圖表中所示的曝光量E的分佈,僅於被曝光基板22之中已局部地變形的區域,變成圖5的(d)的圖表中所示的曝光量E的分佈。另外,並非重疊區域Oa~重疊區域Od的所有區域,至少於一個重疊區域中,產生變成與曝光量E1不同的曝光量的區域。另外,並不限於被曝光基板22的局部的變形,因已塗佈於被曝光基板22的感光材料的厚度不均,而如所述般於至少一個重疊區域中,產生變成與曝光量E1不同的曝光量的區域。
When exposure is performed with the exposure amount shown in FIG. 5( d ), the degree of reaction of the photosensitive material on the
因此,於第一實施方式的曝光裝置100中,在照明光學系統ILa~照明光學系統ILe各自的複眼透鏡11a~複眼透鏡11e的入射面11ai~入射面11ei側,即輸入透鏡8a~輸入透鏡8e與複眼透鏡11a~複眼透鏡11e之間的位置、且複眼透鏡11a~複眼透鏡11e的入射面11ai~入射面11ei的附近,設置有作為照度變更構件的一例的減光構件10a~減光構件10e。而且,減光構件10a~減光構件10e藉由減光構件保持部9a~減光構件保持部9e,於
作為與各個照明光學系統ILa~ILe的光軸IXa~光軸IXe大致正交的方向的X方向上移動自如地得到保持。減光構件10a~減光構件10e的X方向的位置由來自控制部50的控制訊號SigA~控制訊號SigE控制。
Therefore, in the
圖6是自輸入透鏡8c側觀察設置於照明光學系統ILc的複眼透鏡11c、減光構件10c(10ca1、10ca2、10cb1、10cb2、10cc1、10cc2)、及減光構件保持部9c(9ca、9cb、9cc)的圖。以下,參照圖6,對設置於照明光學系統ILc的減光構件10c、及減光構件保持部9c進行說明。再者,關於設置於其他照明光學系統ILa~ILe的減光構件10a~減光構件10e、及減光構件保持部9a~減光構件保持部9e,亦與以下相同。
FIG6 is a diagram of the
複眼透鏡11c於Y方向上排列有多個透鏡組(lens block),所述透鏡組是將剖面為於Y方向上長的長方形的透鏡元件110在X方向上排列多個而成者。如上所述,圖6是自作為入射面11ai~入射面11ei側的輸入透鏡8c側觀察複眼透鏡11c的圖。而且,各透鏡元件110的入射側面變成相對於形成於基板22上的曝光視場PIc的共軛面CP。因此,於圖6中,於各透鏡元件110中,利用虛線表示作為對應於曝光視場PIc的區域的曝光視場對應區域IPIc。再者,將曝光視場對應區域IPIc對於曝光視場PIc的橫倍率設為β倍。
The
第一實施方式的曝光裝置100包括第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二
端部減光構件10cc2,及第三減光構件10ca1、第三減光構件10ca2作為減光構件10c。
The
其中,第一端部減光構件10cb1、第一端部減光構件10cb2及第二端部減光構件10cc1、第二端部減光構件10cc2的Y方向的寬度Wb同曝光視場PIc的右端區域PIcr與左端區域PIcl的寬度Wo的β倍大致相等。 The width Wb of the first end dimming component 10cb1, the first end dimming component 10cb2, the second end dimming component 10cc1, and the second end dimming component 10cc2 in the Y direction is approximately equal to β times the width Wo of the right end area PIcr and the left end area PIcl of the exposure field PIc.
第一端部減光構件10cb1、第一端部減光構件10cb2配置於複眼透鏡11c的+X方向側,覆蓋幾個透鏡元件110的曝光視場對應區域IPIc中的與曝光視場PIc的左端區域PIcl對應的部分,進行減光。
The first end dimming component 10cb1 and the first end dimming component 10cb2 are arranged on the +X direction side of the
第二端部減光構件10cc1、第二端部減光構件10cc2配置於複眼透鏡11c的+X方向側,覆蓋幾個透鏡元件110的曝光視場對應區域IPIc中的與曝光視場PIc的右端區域PIcr對應的部分,進行減光。
The second end dimming component 10cc1 and the second end dimming component 10cc2 are arranged on the +X direction side of the
再者,如上所述,複眼透鏡11c於Y方向上排列有多個透鏡組,所述透鏡組是將透鏡元件110在X方向上排列多個而成者。因此,可將第一端部減光構件10cb1、第一端部減光構件10cb2解釋成如下的構件,所述構件對配置於至少一個透鏡組中的一個以上的透鏡元件110的與重疊部Oc對應的左端區域PIcl的至少一部分進行減光。同樣地,可將第二端部減光構件10cc1、第二端部減光構件10cc2解釋成如下的構件,所述構件對配置於至少一個透鏡組中的一個以上的透鏡元件110的與重疊部Ob對應的右端區
域PIcr的至少一部分進行減光。
Furthermore, as described above, the
第三減光構件10ca1、第三減光構件10ca2的Y方向的寬度Wa與曝光視場PIc的中心區域PIcc的寬度Ws的β倍大致相等。 The width Wa of the third dimming component 10ca1 and the third dimming component 10ca2 in the Y direction is approximately equal to β times the width Ws of the central area PIcc of the exposure field of view PIc.
第三減光構件10ca1、第三減光構件10ca2配置於複眼透鏡11c的-X方向側,覆蓋幾個透鏡元件110的曝光視場對應區域IPIc中的與曝光視場PIc的中心區域PIcc對應的部分,進行減光。
The third light reduction component 10ca1 and the third light reduction component 10ca2 are arranged on the -X direction side of the
可將第三減光構件10ca1、第三減光構件10ca2解釋成如下的構件,所述構件對配置於至少一個透鏡組中的一個以上的透鏡元件110的與非重疊部Sc對應的中心區域PIcc的至少一部分進行減光。
The third dimming component 10ca1 and the third dimming component 10ca2 can be interpreted as components that dim at least a portion of the central area PIcc corresponding to the non-overlapping portion Sc of one or
第一端部減光構件10cb1、第一端部減光構件10cb2由滑件91b保持,滑件91b藉由減光構件保持部9cb,於X方向上移動自如地得到保持。滑件91b與減光構件保持部9cb的相對位置關係藉由編碼器等來測量,並傳達至控制部50。另外,滑件91b與減光構件保持部9cb的相對位置關係,即第一端部減光構件10cb1、第一端部減光構件10cb2的X方向的位置由來自控制部50的控制訊號SigCb控制。
The first end dimming member 10cb1 and the first end dimming member 10cb2 are held by the
第二端部減光構件10cc1、第二端部減光構件10cc2亦同樣地由滑件91c保持,滑件91c藉由減光構件保持部9cc,於X方向上移動自如地得到保持。
The second end dimming component 10cc1 and the second end dimming component 10cc2 are also held by the
第三減光構件10ca1、第三減光構件10ca2亦同樣地由滑件
91a保持,滑件91a藉由減光構件保持部9ca,於X方向上移動自如地得到保持。
The third dimming component 10ca1 and the third dimming component 10ca2 are also held by the
第二端部減光構件10cc1、第二端部減光構件10cc2及第三減光構件10ca1、第三減光構件10ca2的X方向的位置亦與所述同樣地測量,分別由來自控制部50的控制訊號SigCc、控制訊號SigCa控制。
The X-direction positions of the second end dimming component 10cc1, the second end dimming component 10cc2, the third dimming component 10ca1, and the third dimming component 10ca2 are also measured in the same manner as described above, and are controlled by the control signal SigCc and the control signal SigCa from the
使第一端部減光構件10cb1、第一端部減光構件10cb2於±X方向上移動,藉此可變更由第一端部減光構件10cb1、第一端部減光構件10cb2進行減光的透鏡元件110的數量。藉此,可增減基板22上的重疊部Oc的曝光量。
The first end dimming components 10cb1 and 10cb2 are moved in the ±X direction, thereby changing the number of
使第二端部減光構件10cc1、第二端部減光構件10cc2於±X方向上移動,藉此可變更由第二端部減光構件10cc1、第二端部減光構件10cc2進行減光的透鏡元件110的數量。藉此,可增減基板22上的重疊部Ob的曝光量。
The second end dimming components 10cc1 and 10cc2 are moved in the ±X direction, thereby changing the number of
同樣地,使第三減光構件10ca1、第三減光構件10ca2於±X方向上移動,藉此可變更由第三減光構件10ca1、第三減光構件10ca2進行減光的透鏡元件110的數量。藉此,可增減基板22上的非重疊部Sc的曝光量。
Similarly, the third light reduction components 10ca1 and 10ca2 are moved in the ±X direction, thereby changing the number of
根據以上所述,藉由適當地調整第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二端部減光構件10cc2,第三減光構件10ca1、第三減光構件10ca2各自的X方向的位置,可使基板22上的重疊部Ob的曝光量與基板22上
的非重疊部Sc的曝光量相比,相對地增加或減少。
According to the above, by appropriately adjusting the X-direction positions of the first end dimming member 10cb1, the first end dimming member 10cb2, the second end dimming member 10cc1, the second end dimming member 10cc2, the third dimming member 10ca1, and the third dimming member 10ca2, the exposure amount of the overlapping portion Ob on the
另外,控制部50亦可於為了對基板22上進行曝光而朝X方向進行掃描的期間內,適當地調整第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二端部減光構件10cc2,第三減光構件10ca1、第三減光構件10ca2各自的X方向的位置。控制部50亦可於即將對所述基板22之中已局部地變形的區域進行曝光之前,適當地調整第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二端部減光構件10cc2,第三減光構件10ca1、第三減光構件10ca2各自的X方向的位置,於已變形的區域的曝光完成後,變更第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二端部減光構件10cc2,第三減光構件10ca1、第三減光構件10ca2各自的X方向的位置。另外,當對存在感光材料的塗佈不均的基板22進行曝光時,控制部亦可對應於基板22上的感光材料的厚度,使減光構件分別朝X方向移動。再者,曝光裝置100亦可設置如下的測量部,所述測量部於為了對基板22上進行曝光而朝X方向進行掃描的期間或對基板22進行掃描曝光之前,檢測基板22上的局部的變形或感光材料的塗佈不均。
In addition, the
減光構件10c(第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二端部減光構件10cc2,第三減光構件10ca1、第三減光構件10ca2)可為金屬制的薄板,亦可為藉由減光構件而形成於透明的玻璃板上的減光膜。 減光構件10c並不限於如濾波器般完全地遮蔽照明光者,亦可為僅遮蔽一部分的照明光,使剩餘的照明光透過的構件。即,減光構件10c只要是用於變更照度的照度變更構件即可。 The dimming member 10c (first end dimming member 10cb1, first end dimming member 10cb2, second end dimming member 10cc1, second end dimming member 10cc2, third dimming member 10ca1, third dimming member 10ca2) can be a metal thin plate, or a dimming film formed on a transparent glass plate by the dimming member. The dimming member 10c is not limited to a member that completely blocks the illumination light like a filter, but can also be a member that only blocks a part of the illumination light and allows the remaining illumination light to pass through. That is, the dimming member 10c can be any illumination changing member used to change the illumination.
其他照明光學系統ILa、ILb、ILd、ILe包括的減光構件10a、減光構件10b、減光構件10d、減光構件10e,及減光構件保持部9a、減光構件保持部9b、減光構件保持部9d、減光構件保持部9e的結構亦與所述減光構件10c及減光構件保持部9c相同。
The structures of the
藉此,可於各照明光學系統ILa~ILe中調整重疊部Oa~重疊部Od的曝光量與非重疊部Sa~非重疊部Se的曝光量的比率,可防止已轉印至重疊部Oa~重疊部Od與非重疊部Sa~非重疊部Se的圖案的線寬或厚度的變化。 Thus, the exposure ratio of the overlapping portion Oa to the overlapping portion Od and the exposure ratio of the non-overlapping portion Sa to the non-overlapping portion Se can be adjusted in each illumination optical system ILa to ILe, thereby preventing the line width or thickness of the pattern transferred to the overlapping portion Oa to the overlapping portion Od and the non-overlapping portion Sa to the non-overlapping portion Se from changing.
作為一例,於如圖5的(d)的狀態下,使照明光學系統ILb、照明光學系統ILd內的第二端部減光構件朝+X方向移動來減少各曝光視場PIb、PId的右端區域PIbr、右端區域PIdr的曝光量,或使照明光學系統ILa、照明光學系統ILc、照明光學系統ILe內的第一端部減光構件朝-X方向移動來增加各曝光視場PIa、PIc、PIe的左端區域PIal、左端區域PIcl、左端區域PIel的曝光量,藉此使重疊部Oa、重疊部Oc的曝光量與非重疊部Sa~非重疊部Se的曝光量相等。再者,亦可使第二端部減光構件朝+X方向移動、且使第一端部減光構件朝-X方向移動來調整曝光量。另外,關於重疊部Ob、重疊部Od,亦可使照明光學系統ILa、照明光學系統ILc、照明光學系統ILe內的第二端部減光構件朝+X方 向移動,或使照明光學系統ILb、照明光學系統ILd內的第一端部減光構件朝-X方向移動,或使兩者均移動,藉此使重疊部Ob、重疊部Od的曝光量與非重疊部Sa~非重疊部Se的曝光量相等。 As an example, in the state as shown in (d) of Figure 5, the second end dimming component in the illumination optical system ILb and the illumination optical system ILd is moved in the +X direction to reduce the exposure of the right end area PIbr and the right end area PIdr of each exposure field PIb and PId, or the first end dimming component in the illumination optical system ILa, the illumination optical system ILc, and the illumination optical system ILe is moved in the -X direction to increase the exposure of the left end area PIal, the left end area PIcl, and the left end area PIel of each exposure field PIa, PIc, and PIe, thereby making the exposure of the overlapping part Oa and the overlapping part Oc equal to the exposure of the non-overlapping part Sa to the non-overlapping part Se. Furthermore, the exposure amount can be adjusted by moving the second end dimming component in the +X direction and the first end dimming component in the -X direction. In addition, regarding the overlapping portion Ob and the overlapping portion Od, the second end dimming component in the illumination optical system ILa, the illumination optical system ILc, and the illumination optical system ILe can be moved in the +X direction, or the first end dimming component in the illumination optical system ILb and the illumination optical system ILd can be moved in the -X direction, or both can be moved, so that the exposure amount of the overlapping portion Ob and the overlapping portion Od is equal to the exposure amount of the non-overlapping portion Sa to Se.
減光構件10c若自複眼透鏡11c的上方朝-X方向移動,則非重疊部Sc的曝光量與移動前相比增加,因此亦可以說減光構件10c作為增加構件發揮功能。同樣地,第一端部減光構件與第二端部減光構件若自複眼透鏡11c的上方朝+X方向移動,則重疊部Oc的曝光量與移動前相比增加,因此亦可以說第一端部減光構件與第二端部減光構件作為增加構件發揮功能。減光構件10c自複眼透鏡11c的上方朝-X方向移動,但關於X方向,亦可移動至與複眼透鏡11c不重疊的位置為止,亦能夠以減光構件10c與複眼透鏡11c的X方向的重疊量變小的方式移動。
If the dimming component 10c moves from the top of the
減光構件10c配置於自複眼透鏡11c的入射面11ci起於Z方向上僅分離規定距離的位置,因此減光構件10c的XY方向的邊緣模糊地投影於複眼透鏡11c的入射面11ci。反過來說,將減光構件10c自複眼透鏡11c的入射面11ci起於Z方向上分離多少距離來配置才好可根據如下的值來決定,所述值是作為決定基板22上的減光構件10c的邊緣的半影模糊的量的參數的複眼透鏡11c的入射面11ci與基板22的橫倍率(所述β)、及複眼透鏡11c的入射面11ci中的照明光的數值孔徑。進而,亦可參考基板22上的重疊部Oa~重疊部Od的Y方向的寬度來決定。再者,最好具有可變更相對於複眼透鏡11c的入射面11ci的減光構件10c的Z
方向的位置,即可變更Z方向上的減光構件10c與複眼透鏡11c的距離的機構。
The dimmer member 10c is disposed at a position separated from the incident surface 11ci of the
作為一例,當將重疊部Oa~重疊部Od的Y方向的寬度設為DW,將基板22對於複眼透鏡11c的入射面11ci的橫倍率設為β,將複眼透鏡11c的入射面11ci中的照明光的數值孔徑設為NA時,較佳為將減光構件10c的與複眼透鏡11c的入射面11ci的Z方向的距離D設為0≦D≦1.2×DW/(β‧NA)…(1)。
For example, when the width of the overlapping portion Oa to the overlapping portion Od in the Y direction is set to DW, the lateral magnification of the
當距離D滿足式(1)時,可進一步減少由減光構件10c的邊緣所產生的基板22上的曝光量變化(曝光量不均)的影響。
When the distance D satisfies formula (1), the influence of exposure variation (uneven exposure) on the
再者,減光構件10c的X方向的位置的決定例如最好於將減光構件10c的插入量(X方向的位置)設定成不同的幾個階段的多個條件下進行測試曝光,根據其結果來決定最合適的插入量。 Furthermore, the position of the light-reducing component 10c in the X direction is preferably determined by setting the insertion amount (position in the X direction) of the light-reducing component 10c to different stages and performing test exposure under multiple conditions, and determining the most appropriate insertion amount based on the results.
另外,亦可藉由設置於曝光裝置100的內部的測量裝置來測量基板22的經塗佈的感光材料的厚度,根據其結果來決定減光構件10c的最合適的插入量。再者,測量裝置亦可為設置於曝光裝置100外者。
In addition, the thickness of the coated photosensitive material on the
另外,當決定減光構件10c的插入量時,最好使用設置於基板載台27上的照度感測器26,一面測量曝光視場PIc內的各部的照度一面進行決定。
In addition, when determining the insertion amount of the dimming component 10c, it is best to use the
再者,構成圖6中所示的第三減光構件的兩根減光構件
10ca1、10ca2各自的+X方向的端部分別僅偏離複眼透鏡11c的透鏡元件110的X方向的排列的間距PX的一半。如上所述,於各透鏡元件110中存在對應於曝光視場PIc的曝光視場對應區域IPIc,但曝光視場對應區域IPIc並非橫跨透鏡元件110的X方向的整個面擴展。即,透鏡元件110的X方向的兩端部是不與基板22上的曝光視場PIc對應,投影於投影光學系統19c內的視場光圈21c上,由視場光圈21c進行遮光的部分。
Furthermore, the ends of the two light-reducing components 10ca1 and 10ca2 constituting the third light-reducing component shown in FIG. 6 in the +X direction are respectively offset by only half of the pitch PX of the arrangement of the
因此,當減光構件10ca1、減光構件10ca2的+X方向的端部位於透鏡元件110的X方向的兩端部的附近時,即便使減光構件10ca1、減光構件10ca2朝X方向移動,亦無法變更基板22上的曝光量。
Therefore, when the ends of the dimming components 10ca1 and 10ca2 in the +X direction are located near the ends of the
因此,於第一實施方式中,使兩根減光構件10ca1、10ca2各自的+X方向的端部僅偏離透鏡元件110的X方向的排列的間距PX的一半。
Therefore, in the first embodiment, the ends of the two dimming components 10ca1 and 10ca2 in the +X direction are offset from the arrangement distance PX of the
藉由此種配置,當兩根減光構件10ca1、10ca2的一者的+X方向端部位於透鏡元件110的X方向的兩端部的附近時,另一者的+X方向端部配置於透鏡元件110的X方向的中心的附近。因此,藉由使兩根減光構件10ca1、10ca2均朝X方向移動,可經常變更基板22上的曝光量。再者,亦可設為使減光構件10ca1與減光構件10ca2分別獨立地朝X方向移動的構成。
With this arrangement, when the +X direction end of one of the two dimming components 10ca1 and 10ca2 is located near the two ends of the
再者,減光構件10ca1、減光構件10ca2並不限於所述兩根,亦可為三根以上、且分別配置於不同的透鏡組。於此情況 下,若減光構件的根數為m根(m為2以上的自然數),則各減光構件的+X方向的端部較佳為以相對於間距PX僅偏離PX/m的方式設定。 Furthermore, the dimming components 10ca1 and 10ca2 are not limited to the two mentioned above, but may be three or more and respectively arranged in different lens groups. In this case, if the number of dimming components is m (m is a natural number greater than 2), the ends of each dimming component in the +X direction are preferably set in a manner that is only deviated from the spacing PX by PX/m.
關於構成所述第三減光構件的減光構件10ca1、減光構件10ca2的+X方向端的位置或根數,亦可同樣地適用於構成第一端部減光構件的減光構件10cb1、減光構件10cb2及構成第二端部減光構件的減光構件10cc1、減光構件10cc2的-X方向端的位置或根數。 The position or number of the +X direction ends of the dimming components 10ca1 and 10ca2 constituting the third dimming component can also be similarly applied to the position or number of the -X direction ends of the dimming components 10cb1 and 10cb2 constituting the first end dimming component and the dimming components 10cc1 and 10cc2 constituting the second end dimming component.
再者,減光構件10c配置於自複眼透鏡11c的入射面11ci起於Z方向上僅分離規定距離的位置,但並不限定於此。減光構件10c亦可設置於相對於複眼透鏡11c的入射面11ci,即基板22的上表面的共軛面CP。若減光構件10c是完全地遮蔽照明光者,則於將其與共軛面CP一致來配置的情況下,存在重疊部Oa~重疊部Od的曝光量與非重疊部Sa~非重疊部Se的曝光量不連續地變化之虞。因此,於此情況下,減光構件10c最好是使形狀變形、或如濾波器般的對應於Y方向的位置使照明光的遮光率連續地變化者。另外,亦可藉由第一端部減光構件10cb1、第一端部減光構件10cb2及第二端部減光構件10cc1、第二端部減光構件10cc2與第三減光構件10ca1、第三減光構件10ca2,變更照明光的遮光率。
Furthermore, the dimming component 10c is disposed at a position separated by a predetermined distance in the Z direction from the incident surface 11ci of the
(變形例1) (Variant 1)
於以上的第一實施方式中,將第一端部減光構件10cb1、第一端部減光構件10cb2與第二端部減光構件10cc1、第二端部減光
構件10cc2配置於複眼透鏡11c的+X方向一側,將第三減光構件10ca1、第三減光構件10ca2配置於複眼透鏡11c的-X方向側,但並不限定於該配置。只要於使減光構件10c分別朝X方向移動時,各減光構件10c彼此不衝撞或機械式地干涉,則亦可將所有減光構件10c配置於複眼透鏡11c的+X方向側或-X方向側,可減小照明光學系統ILa~照明光學系統ILe的X方向的大小。
In the first embodiment described above, the first end dimming components 10cb1 and 10cb2 and the second end dimming components 10cc1 and 10cc2 are arranged on the +X direction side of the
(變形例2) (Variant 2)
減光構件10c由於可藉由使第一端部減光構件10cb1、第一端部減光構件10cb2與第二端部減光構件10cc1、第二端部減光構件10cc2朝X方向移動,而變更重疊部Ob、重疊部Od的曝光量與非重疊部Sa~非重疊部Se的曝光量的比率,因此亦可省略第三減光構件10ca1、第三減光構件10ca2,僅包含第一端部減光構件10cb1、第一端部減光構件10cb2及第二端部減光構件10cc1、第二端部減光構件10cc2。另外,減光構件10亦可省略第一端部減光構件10cb1、第一端部減光構件10cb2及第二端部減光構件10cc1、第二端部減光構件10cc2,僅包含第三減光構件10ca1、第三減光構件10ca2。 Since the dimming component 10c can change the ratio of the exposure amount of the overlapping portion Ob, the overlapping portion Od to the exposure amount of the non-overlapping portion Sa~the non-overlapping portion Se by moving the first end dimming component 10cb1, the first end dimming component 10cb2 and the second end dimming component 10cc1, the second end dimming component 10cc2 in the X direction, the third dimming component 10ca1, the third dimming component 10ca2 can be omitted, and only the first end dimming component 10cb1, the first end dimming component 10cb2 and the second end dimming component 10cc1, the second end dimming component 10cc2 are included. In addition, the dimming component 10 may also omit the first end dimming component 10cb1, the first end dimming component 10cb2 and the second end dimming component 10cc1, the second end dimming component 10cc2, and only include the third dimming component 10ca1, the third dimming component 10ca2.
再者,於第一實施方式中,將所有照明光學系統ILa~ILe內的減光構件10a~減光構件10e的構成設為相同,但並不限定於此,例如,亦可於第一行的投影光學系統19F與第二行的投影光學系統19R中變更減光構件的構成,亦可於各照明光學系統ILa~ILe中變更減光構件的構成。
Furthermore, in the first embodiment, the dimming
另外,於在基板22已局部地變形的情況或存在感光材料的塗佈不均的情況等下,僅使照明光學系統ILa~照明光學系統ILe之中,朝所述區域投影照明光的照明光學系統ILa~照明光學系統ILe所具有的減光構件移動,朝其他區域投影照明光的照明光學系統中,亦可不使減光構件移動。
In addition, in the case where the
(變形例3) (Variant 3)
以上,於第一實施方式中,使第一端部減光構件10cb1、第一端部減光構件10cb2相對於透鏡元件中的+Y方向的兩行朝X方向進行相對移動,使第二端部減光構件10cc1、第二端部減光構件10cc2相對於透鏡元件中的-Y方向的兩行朝X方向進行相對移動,使第三減光構件10ca1、第三減光構件10ca2相對於透鏡元件中的中央的兩行朝X方向進行相對移動,但並不限定於此。亦可使第一端部減光構件10cb1、第一端部減光構件10cb2,第二端部減光構件10cc1、第二端部減光構件10cc2,第三減光構件10ca1、第三減光構件10ca2全部相對於排列在相同行的透鏡元件朝X方向進行相對移動,亦可使一部分不同。 In the above, in the first embodiment, the first end dimming components 10cb1 and 10cb2 are relatively moved toward the X direction relative to the two rows in the +Y direction of the lens element, the second end dimming components 10cc1 and 10cc2 are relatively moved toward the X direction relative to the two rows in the -Y direction of the lens element, and the third dimming components 10ca1 and 10ca2 are relatively moved toward the X direction relative to the two central rows of the lens element, but the present invention is not limited thereto. The first end dimming component 10cb1, the first end dimming component 10cb2, the second end dimming component 10cc1, the second end dimming component 10cc2, the third dimming component 10ca1, and the third dimming component 10ca2 can all be moved relative to the lens elements arranged in the same row in the X direction, or some of them can be different.
(變形例4) (Variant 4)
對作為照度變更構件的一例的減光構件10a~減光構件10e相對於複眼透鏡11在X方向上移動自如進行了說明,但亦可為Z方向的移動自如。另外,減光構件10a~減光構件10e的各個亦可包含於Z方向上堆積的多片減光構件。所述多片減光構件亦可相互朝Y方向進行相對移動,換言之,多個減光構件亦可相對於複
眼透鏡11朝Y方向進行相對移動。如此,照度變更構件相對於複眼透鏡11朝X方向、Y方向、Z方向的任一方向進行相對移動,藉此可變更基板22上的曝光量分佈。
The dimming
(變形例5) (Variant 5)
於以上的第一實施方式及各變形例中,設為具有五個投影光學系統19a~19e,但投影光學系統的根數並不限於五個,亦可為三個或八個等任意個數。
In the first embodiment and various variations above, there are five projection
另外,於以上的第一實施方式及各變形例中,設為具有多個投影光學系統19a~19e,藉由一次X方向的掃描,各投影光學系統形成的多個曝光視場SIa~SIe相互於Y方向上重疊。
In addition, in the first embodiment and various variations described above, it is assumed that there are multiple projection
但是,亦可投影光學系統為一個,一面使基板22及遮罩15朝Y方向移動,一面進行多次基板22的朝X方向的掃描曝光,使藉由各掃描曝光所形成的多個曝光視場相互於Y方向上重疊。於此情況下,理想的是對應於一個投影光學系統的照明光學系統亦包括與所述照明光學系統ILa~照明光學系統ILe相同的構成。
However, the projection optical system may be one, and the
再者,如所述第一實施方式及各變形例般具有多個投影光學系統19a~19e的裝置可藉由一次掃描曝光而對基板22上的更多的面積進行曝光,處理能力優異。
Furthermore, the device having multiple projection
於以上的第一實施方式及各變形例中,將多個投影光學系統19a~19e設為包含全折射光學系統,但並不限於此,亦可採用反射折射光學系統或全反射光學系統。
In the first embodiment and various variations above, the multiple projection
另外,於以上的第一實施方式及各變形例中,將曝光視場PIa~曝光視場PIe的形狀設為梯形,但並不限於梯形,例如,亦可為相當於所述中心部分的部分的形狀為圓弧,於圓弧的兩端包括三角形的右端區域及左端區域的視場。 In addition, in the first embodiment and various variations above, the shape of the exposure field of view PIa to the exposure field of view PIe is set to a trapezoid, but it is not limited to a trapezoid. For example, the shape of the portion corresponding to the central portion may be an arc, and the fields of view including the right end area and the left end area of the triangle at both ends of the arc.
於以上的第一實施方式及各變形例中,將各投影光學系統19a~19e的光軸PAXa~光軸PAXe、及各照明光學系統ILa~ILe的光軸IXa~光軸IXe設為基本上與Z方向平行地設定者。但是,當於任一個光學系統中採用偏轉鏡時,光軸的方向變得與Z方向不平行。
In the first embodiment and various variations described above, the optical axes PAXa to PAXe of the projection
另外,當於任一個光學系統中採用偏轉鏡時,減光構件10a~減光構件10e的移動方向亦變成與基板22的掃描方向(X方向)不同的方向。但是,即便於此情況下,亦只要根據包含偏轉鏡的基板22與複眼透鏡11a~複眼透鏡11e的共軛關係,將減光構件10a~減光構件10e設為於以光學方式對應於基板22的掃描方向的方向上移動自如即可。
In addition, when a deflecting mirror is used in any optical system, the moving direction of the
另外,於以上的實施方式中,將各投影光學系統19a~19e設為於X方向上配置有第一行的投影光學系統19F及第二行的投影光學系統19R的兩行的光學系統者,但並不限定於兩行,亦可於X方向上配置三行以上的光學系統。
In addition, in the above embodiment, each projection
作為光學積分器,亦可採用棒積分器來代替所述複眼透鏡11。於採用棒積分器的情況下,與基板22及遮罩15的共軛面CP變成棒積分器的射出側(遮罩15側),因此減光構件10亦配
置於棒積分器的射出側的附近。而且,設為對棒積分器的射出面的X側的一端的附近部分地進行遮光的構成。
As an optical integrator, a rod integrator may be used instead of the
亦可將減光構件10a~減光構件10e配置於投影光學系統19a~投影光學系統19e的中間像面20附近,而代替配置於照明光學系統ILa~照明光學系統ILe內。於此情況下,亦將減光構件設為於中間像面20附近,遮蔽與曝光視場PIa~曝光視場PIe的中心區域PIac~中心區域PIec對應的部分的構成。
The dimming
亦可於照明光學系統ILa~照明光學系統ILe的內部設置中間像面(相對於遮罩15的共軛面),並於照明光學系統ILa~照明光學系統ILe內的中間像面設置規定基板22上的曝光視場PIa~曝光視場PIe的形狀的視場光圈,而代替於投影光學系統19a~投影光學系統19e內配置視場光圈21a~視場光圈21e。
Alternatively, an intermediate image plane (a conjugate plane relative to the mask 15) may be provided inside the illumination optical system ILa to ILe, and a field aperture that specifies the shape of the exposure field PIa to PIe on the
於以上的實施方式中,設為投影光學系統19a~投影光學系統19e及照明光學系統ILa~照明光學系統ILe被固定,基板22藉由基板載台27而進行移動,但亦可設為將投影光學系統19a~投影光學系統19e及照明光學系統ILa~照明光學系統ILe設置於基板載台上,對基板22進行掃描的構成來代替。
In the above embodiment, the projection
另外,遮罩15並不限於在玻璃基板上形成有圖案的遮罩,亦可為包含數位多鏡元件或液晶元件的可變成形遮罩。
In addition, the
作為曝光裝置100的用途,亦可應用於將液晶顯示元件圖案轉印至方形的玻璃板的液晶用的曝光裝置,例如有機電致發光(Electro-Luminescence,EL)面板製造用的曝光裝置。另外,
亦可應用於為了製造不僅用於半導體元件等微型元件,而且用於光曝光裝置、極紫外線(Extreme Ultraviolet,EUV)曝光裝置、X射線曝光裝置、及電子束曝光裝置等的遮罩或光罩,而將電路圖案轉印至玻璃基板或矽晶圓等的曝光裝置。
As a use of the
由曝光裝置100進行了曝光的基板(玻璃板等)由未圖示的顯影裝置進行顯影處理,視需要,根據藉由曝光及顯影處理所形成的感光材料的圖案來進行蝕刻加工等。
The substrate (glass plate, etc.) exposed by the
另外,曝光對象並不限於玻璃基板,例如亦可為晶圓、陶瓷基板、膜構件、或空白遮罩等其他物體。另外,於曝光對象物是平板顯示器用的基板的情況下,所述基板的厚度並無特別限定,例如亦包含膜狀(具有可撓性的片狀的構件)者。再者,於一邊的長度、或對角長為500mm以上的基板是曝光對象物的情況下,第一實施方式及各變形例的曝光裝置特別有效。另外,於曝光對象的基板是具有可撓性的片材狀的情況下,該片材亦可形成為輥狀。 In addition, the exposure object is not limited to a glass substrate, and may be other objects such as a wafer, a ceramic substrate, a film component, or a blank mask. In addition, when the exposure object is a substrate for a flat panel display, the thickness of the substrate is not particularly limited, and for example, a film-shaped (a flexible sheet-shaped component) is also included. Furthermore, when the exposure object is a substrate with a length of one side or a diagonal length of 500 mm or more, the exposure device of the first embodiment and each variant is particularly effective. In addition, when the exposure object substrate is a flexible sheet-shaped material, the sheet can also be formed into a roll shape.
根據所述第一實施方式及各變形例,可獲得以下的作用效果。 According to the first embodiment and various variations, the following effects can be obtained.
(1)第一實施方式或各變形例的曝光裝置100利用在第一時間內對被曝光基板22上的第一曝光區域(掃描曝光視場SIa、掃描曝光視場SIc、掃描曝光視場SIe)進行曝光的第一曝光、及在與第一時間不同的第二時間內對被曝光基板22上的第二曝光區域(掃描曝光視場SIb、掃描曝光視場SId)進行曝光的第二曝光,對
被曝光基板22進行曝光,所述曝光裝置包括:照明光學系統ILa~照明光學系統ILe,具有光學積分器11a~光學積分器11e,供給照明光;投影光學系統19a~投影光學系統19e;以及基板載台27,以規定圖案於被曝光基板22上得到曝光的方式,使被曝光基板22相對於投影光學系統19a~投影光學系統19e朝掃描方向(X方向)進行相對移動。
(1) The
而且,包括:照度變更構件10a~照度變更構件10e,在設置於被入射照明光的入射面11ai~入射面11ei與被曝光基板22的上表面變成共軛的位置(共軛面CP)的光學積分器11a~光學積分器11e的入射面側,相對於光學積分器11a~光學積分器11e可相對移動地配置,以將對第二區域(重疊部Oa~重疊部Od)進行曝光的曝光量、與對第一區域(非重疊部Sa~非重疊部Se)進行曝光的曝光量的一者相對於另一者相對地變更的方式,變更照明光的照度,所述第二區域是被曝光基板22上的第一曝光區域及第二曝光區域的各區域的一部分重複的區域,所述第一區域是第一曝光區域的其他部分及第二曝光區域的其他部分的區域;以及控制部50,控制照度變更構件10a~照度變更構件10e相對於光學積分器11a~光學積分器11e的相對移動。
The
進而,控制部50以使第一區域(非重疊部Sa~非重疊部Se)中的曝光量相對於第二區域(重疊部Oa~重疊部Od)中的曝光量相對地變大的方式,使照度變更構件10a~照度變更構件10e相對於光學積分器進行相對移動。
Furthermore, the
藉由所述構成,可調整第一區域(非重疊部Sa~非重疊部Se)的曝光量與第二區域(重疊部Oa~重疊部Od)的曝光量的比率,可防止已轉印至第一區域與第二區域的圖案的線寬或厚度的變化。 With the above structure, the ratio of the exposure amount of the first area (non-overlapping part Sa~non-overlapping part Se) to the exposure amount of the second area (overlapping part Oa~overlapping part Od) can be adjusted, and the line width or thickness of the pattern transferred to the first area and the second area can be prevented from changing.
(2)第一實施方式或各變形例的曝光裝置100利用在第一時間內對被曝光基板22上的第一曝光區域(SIa、SIc、SIe)進行曝光的第一曝光、及在與第一時間不同的第二時間內對被曝光基板22上的第二曝光區域(SIb、SId)進行曝光的第二曝光,對被曝光基板22進行曝光,所述曝光裝置包括:照明光學系統ILa~照明光學系統ILe,具有光學積分器11a~光學積分器11e,供給照明光;投影光學系統19a~投影光學系統19e;以及基板載台27,以規定圖案於被曝光基板22上得到曝光的方式,使被曝光基板22相對於投影光學系統19a~投影光學系統19e朝掃描方向(X方向)進行相對移動。
(2) The
而且,包括:照度變更構件10a~照度變更構件10e,在設置於被入射照明光的入射面11ai~入射面11ei與被曝光基板22的上表面變成共軛的位置的光學積分器的入射面側,相對於光學積分器可相對移動地配置,以變更對第二區域(重疊部Oa~重疊部Od)進行曝光的曝光量、與對第一區域(非重疊部Sa~非重疊部Se)進行曝光的曝光量的一者對於另一者的曝光量比的方式,變更照明光的照度,所述第二區域是被曝光基板22上的第一曝光區域及第二曝光區域的各區域的一部分重複的區域,所述第一區域是第
一曝光區域的其他部分及第二曝光區域的其他部分的區域;以及控制部50,控制照度變更構件相對於光學積分器的相對移動。
The
進而,控制部50於基板載台27相對於投影光學系統19a~投影光學系統19e的移動過程中,使照度變更構件10a~照度變更構件10e相對於光學積分器進行相對移動。
Furthermore, the
藉由所述構成,可調整第一區域(非重疊部Sa~非重疊部Se)的曝光量與第二區域(重疊部Oa~重疊部Od)的曝光量的比率,可防止已轉印至第一區域與第二區域的圖案的線寬或厚度的變化。 With the above structure, the ratio of the exposure amount of the first area (non-overlapping part Sa~non-overlapping part Se) to the exposure amount of the second area (overlapping part Oa~overlapping part Od) can be adjusted, and the line width or thickness of the pattern transferred to the first area and the second area can be prevented from changing.
(3)第一實施方式或各變形例的曝光裝置100包括:投影光學系統19a~投影光學系統19e;照明光學系統ILa~照明光學系統ILe,具有光學積分器11a~光學積分器11e,對投影光學系統19a~投影光學系統19e供給照明光;以及基板載台27,以規定圖案於被曝光基板22上得到曝光的方式,使被曝光基板22相對於投影光學系統19a~投影光學系統19e朝掃描方向進行相對移動。
(3) The
進而,包括:照度變更構件10a~照度變更構件10e,相對於第一區域(非重疊部Sa~非重疊部Se)中的曝光量、與第二區域(重疊部Oa~重疊部Od)中的曝光量的一者的曝光量,相對地變更另一者的曝光量,所述第一區域是於曝光中,藉由投影光學系統的掃描曝光視場SIa~掃描曝光視場SIe而於時間上連續地得到曝光的被曝光基板22上的區域,所述第二區域是藉由掃描曝光視
場而於時間上離散地得到曝光的區域;以及控制部,使照度變更構件10a~照度變更構件10e相對於光學積分器,朝以光學方式對應於掃描方向的第一方向進行相對移動,所述光學積分器設置於照明光的入射面11ai~入射面11ei相對於被曝光基板22上的掃描曝光視場SIa~掃描曝光視場SIe變成共軛面CP的位置。
Furthermore, the
而且,控制部50以使第一區域(非重疊部Sa~非重疊部Se)中的曝光量相對於第二區域(重疊部Oa~重疊部Od)中的曝光量相對地變大的方式,使照度變更構件10a~照度變更構件10e相對於光學積分器進行相對移動。
Furthermore, the
藉由所述構成,可調整第一區域(非重疊部Sa~非重疊部Se)的曝光量與第二區域(重疊部Oa~重疊部Od)的曝光量的比率,可防止已轉印至第一區域與第二區域的圖案的線寬或厚度的變化。 With the above structure, the ratio of the exposure amount of the first area (non-overlapping part Sa~non-overlapping part Se) to the exposure amount of the second area (overlapping part Oa~overlapping part Od) can be adjusted, and the line width or thickness of the pattern transferred to the first area and the second area can be prevented from changing.
(4)第一實施方式或各變形例的曝光裝置100包括:投影光學系統19a~投影光學系統19e;照明光學系統ILa~照明光學系統ILe,具有光學積分器11a~光學積分器11e,對投影光學系統19a~投影光學系統19e供給照明光;以及基板載台27,以規定圖案於被曝光基板22上得到曝光的方式,使被曝光基板22相對於投影光學系統19a~投影光學系統19e朝掃描方向(X方向)進行相對移動。
(4) The
而且,包括:照度變更構件10a~照度變更構件10e,在設置於被入射照明光的入射面11ai~入射面11ei與被曝光基板22的上
表面變成共軛的位置(共軛面CP)的光學積分器的入射面側,相對於光學積分器可相對移動地配置,以變更第一區域(非重疊部Sa~非重疊部Se)中的曝光量、與第二區域(重疊部Oa~重疊部Od)中的曝光量的一者對於另一者的曝光量比的方式,變更照明光的照度,所述第一區域是藉由投影光學系統19a~投影光學系統19e的掃描曝光視場而於時間上連續地得到曝光的被曝光基板22上的區域,所述第二區域是藉由掃描曝光視場而於時間上離散地得到曝光的區域;以及控制部50,控制照度變更構件10a~照度變更構件10e相對於光學積分器11a~光學積分器11e的相對移動;控制部50於基板載台相對於投影光學系統19a~投影光學系統19e的移動過程中,使照度變更構件10a~照度變更構件10e相對於光學積分器11a~光學積分器11e進行相對移動。
The invention also includes:
藉由所述構成,可調整第一區域(非重疊部Sa~非重疊部Se)的曝光量與第二區域(重疊部Oa~重疊部Od)的曝光量的比率,可防止已轉印至第一區域與第二區域的圖案的線寬或厚度的變化。 With the above structure, the ratio of the exposure amount of the first area (non-overlapping part Sa~non-overlapping part Se) to the exposure amount of the second area (overlapping part Oa~overlapping part Od) can be adjusted, and the line width or thickness of the pattern transferred to the first area and the second area can be prevented from changing.
(5)藉由將照度變更構件10a~照度變更構件10e設為包含第一端部減光構件10cb1、第一端部減光構件10cb2與第二端部減光構件10cc1、第二端部減光構件10cc2的構成,可高精度地減少重疊部Oa~重疊部Od的曝光量,所述第一端部減光構件10cb1、第一端部減光構件10cb2設置於共軛面CP中的對應於第二區域(重疊部Oa~重疊部Od)的部分的與第一方向交叉的第二
方向的第一側的端部附近,所述第二端部減光構件10cc1、第二端部減光構件10cc2設置於共軛面CP中的對應於第二區域(重疊部Oa~重疊部Od)的部分的第二方向的與第一側為相反側的第二側的端部附近。
(5) By configuring the
(6)藉由將控制部50設為分別控制第一端部減光構件10cb1、第一端部減光構件10cb2與第二端部減光構件10cc1、第二端部減光構件10cc2來使該些減光構件朝第一方向移動的構成,可個別地調整多個第二區域(重疊部Oa~重疊部Od)各自的曝光量,可使經轉印的圖案的線寬或厚度變得更均勻。
(6) By setting the
(7)藉由將照度變更構件10a~照度變更構件10e設為包含設置於共軛面CP中的對應於第一區域(非重疊部Sa~非重疊部Se)的部分的第三減光構件10ca1、第三減光構件10ca2的構成,可更高精度地調整第一區域(非重疊部Sa~非重疊部Se)的曝光量與第二區域(重疊部Oa~重疊部Od)的曝光量的比率。(8)藉由將控制部50設為使第三減光構件10ca1、第三減光構件10ca2獨立於第一端部減光構件10cb1、第一端部減光構件10cb2與第二端部減光構件10cc1、第二端部減光構件10cc2而朝第一方向移動的構成,可更高精度地調整第一區域(非重疊部Sa~非重疊部Se)的曝光量與第二區域(重疊部Oa~重疊部Od)的曝光量的比率。
(7) By setting the
以上對各種實施方式及變形例進行了說明,但本發明並不限定於該些內容。另外,各實施方式及變形例可分別單獨應用,亦可組合使用。於本發明的技術思想的範圍內可想到的其他形態 亦包含於本發明的範圍內。 Various implementations and variations are described above, but the present invention is not limited to these contents. In addition, each implementation and variation can be applied separately or in combination. Other forms that can be imagined within the scope of the technical concept of the present invention are also included in the scope of the present invention.
以下的優先權基礎申請的揭示內容作為引用文而編入本案中。 The disclosure contents of the following priority application are incorporated into this case as citations.
日本專利特願2019-069148號(2019年3月29日申請) Japanese Patent Application No. 2019-069148 (applied on March 29, 2019)
9ca、9cb、9cc:減光構件保持部 9ca, 9cb, 9cc: dimming component holding part
10ca1、10ca2:第三減光構件 10ca1, 10ca2: The third dimming component
10cb1、10cb2:第一端部減光構件 10cb1, 10cb2: first end dimming component
10cc1、10cc2:第二端部減光構件 10cc1, 10cc2: Second end dimming component
11c:複眼透鏡(光學積分器) 11c: Compound eye lens (optical integrator)
91a、91b、91c:滑件 91a, 91b, 91c: Slides
110:透鏡元件 110: Lens element
IPIc:曝光視場對應區域 IPIc: Exposure field corresponding area
PX:間距 PX: Pitch
SigCa、SigCb、SigCc:控制訊號 SigCa, SigCb, SigCc: control signals
Wa、Wb:寬度 Wa, Wb: width
X、Y、Z:方向 X, Y, Z: direction
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| TW201820045A (en) * | 2016-08-30 | 2018-06-01 | 日商佳能股份有限公司 | Illuminating optical system, lithography device, and article manufacturing method |
| TW201910925A (en) * | 2017-07-28 | 2019-03-16 | 日商佳能股份有限公司 | Illumination optical system, exposure device, and article manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10199800A (en) * | 1997-01-09 | 1998-07-31 | Nikon Corp | Illumination optical device with optical integrator |
| JP2001297975A (en) * | 2000-04-17 | 2001-10-26 | Nikon Corp | Exposure apparatus and exposure method |
| JP2001305745A (en) * | 2000-04-24 | 2001-11-02 | Nikon Corp | Scanning exposure method and scanning type exposure apparatus |
| JP5326928B2 (en) * | 2009-08-19 | 2013-10-30 | 株式会社ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| JPWO2017150388A1 (en) * | 2016-02-29 | 2018-11-29 | 株式会社ニコン | Exposure apparatus, flat panel display manufacturing method, device manufacturing method, shading apparatus, and exposure method |
| KR102567319B1 (en) * | 2016-04-28 | 2023-08-16 | 엘지디스플레이 주식회사 | Apparatus for divisional exposure and method of fabricating liquid crystal display device using thereof |
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2020
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- 2020-03-04 CN CN202410239514.6A patent/CN117908338A/en active Pending
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- 2020-03-04 CN CN202080014640.1A patent/CN113439239B/en active Active
- 2020-03-20 TW TW109109293A patent/TWI874373B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002258489A (en) * | 2000-04-20 | 2002-09-11 | Nikon Corp | Exposure apparatus and exposure method |
| WO2010073794A1 (en) * | 2008-12-24 | 2010-07-01 | 株式会社 ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| US20140211174A1 (en) * | 2011-06-13 | 2014-07-31 | Nikon Corporation | Illumination optical assembly, exposure device, and device manufacturing method |
| TW201820045A (en) * | 2016-08-30 | 2018-06-01 | 日商佳能股份有限公司 | Illuminating optical system, lithography device, and article manufacturing method |
| TW201812479A (en) * | 2016-09-09 | 2018-04-01 | 佳能股份有限公司 | Lighting optical system, exposure device and manufacturing method of goods being provided with a light screen, a regulating part, and a wavelength selection part |
| TW201910925A (en) * | 2017-07-28 | 2019-03-16 | 日商佳能股份有限公司 | Illumination optical system, exposure device, and article manufacturing method |
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| CN113439239A (en) | 2021-09-24 |
| KR20210144669A (en) | 2021-11-30 |
| WO2020203003A1 (en) | 2020-10-08 |
| CN113439239B (en) | 2024-03-26 |
| JP7533445B2 (en) | 2024-08-14 |
| TW202040283A (en) | 2020-11-01 |
| CN117908338A (en) | 2024-04-19 |
| JPWO2020203003A1 (en) | 2020-10-08 |
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