TWI874049B - Laser processing system - Google Patents
Laser processing system Download PDFInfo
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- TWI874049B TWI874049B TW112148995A TW112148995A TWI874049B TW I874049 B TWI874049 B TW I874049B TW 112148995 A TW112148995 A TW 112148995A TW 112148995 A TW112148995 A TW 112148995A TW I874049 B TWI874049 B TW I874049B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
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Abstract
Description
本發明是有關於一種光學系統,且特別是有關於一種雷射加工系統。The present invention relates to an optical system, and more particularly to a laser processing system.
在產業用雷射加工中,具有微米(μm)級的精密度的應用領域為微雷射加工,廣泛用於半導體產業、顯示器產業、印刷電路板(PCB)產業、智慧手機產業等。如何提高加工效能、精度以及良率成為亟需解決的問題。In industrial laser processing, the application field with micron (μm) level precision is micro laser processing, which is widely used in the semiconductor industry, display industry, printed circuit board (PCB) industry, smart phone industry, etc. How to improve processing performance, accuracy and yield has become an urgent problem to be solved.
本發明提供一種雷射加工系統,可以有效提高加工效能、精度以及良率。The present invention provides a laser processing system that can effectively improve processing performance, precision and yield.
根據本發明一實施例,提供一種雷射加工系統,包括雷射源、光準直器、擴束器、繞射分光器、振鏡以及遠心聚焦鏡。雷射源配置以產生雷射光。光準直器、擴束器、繞射分光器、振鏡以及遠心聚焦鏡依序配置於雷射光的路徑上。振鏡包括至少兩個反射鏡。According to an embodiment of the present invention, a laser processing system is provided, including a laser source, a light collimator, a beam expander, a diffraction beam splitter, a galvanometer, and a telecentric focusing mirror. The laser source is configured to generate laser light. The light collimator, the beam expander, the diffraction beam splitter, the galvanometer, and the telecentric focusing mirror are sequentially arranged on the path of the laser light. The galvanometer includes at least two reflective mirrors.
基於上述,本發明實施例提供的雷射加工系統利用光準直器以及遠心聚焦鏡改善雷射光斑的品質,尤其藉由繞射分光器達到多光束同時加工的功能。據此,雷射加工系統可以具備良好的加工效能、精度以及良率。Based on the above, the laser processing system provided by the embodiment of the present invention utilizes a light collimator and a telecentric focusing lens to improve the quality of the laser spot, and in particular, achieves the function of multi-beam simultaneous processing by using a diffraction beam splitter. Accordingly, the laser processing system can have good processing performance, accuracy and yield.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.
參照圖1A、圖1B、圖1C以及圖1D,圖1A是根據本發明實施例的雷射加工系統的示意圖,圖1B以及圖1C是根據本發明實施例的雷射加工光束的強度分布示意圖,圖1D是根據本發明實施例的雷射加工光束示意圖。1A, 1B, 1C and 1D, FIG1A is a schematic diagram of a laser processing system according to an embodiment of the present invention, FIG1B and FIG1C are schematic diagrams of the intensity distribution of the laser processing beam according to an embodiment of the present invention, and FIG1D is a schematic diagram of the laser processing beam according to an embodiment of the present invention.
雷射加工系統100包括雷射源101、光準直器102、擴束器103、繞射分光器104、振鏡105以及遠心聚焦鏡106。雷射源101配置以產生雷射光LR,雷射光LR的波長可以落在350 nm至1080 nm的範圍內。雷射光LR在通過光準直器102後形成為準直光。準直的雷射光LR被擴束器103擴束後形成為光斑較大的準直光。藉由將此光斑較大的準直雷射光LR入射繞射分光器104,可以產生M×N個陣列型的多個雷射光BT0,M可以是大於或等於1的正整數,N可以是大於1的正整數。The
振鏡105包括至少兩個反射鏡,該至少兩個反射鏡在馬達的帶動下可以旋轉,以改變該些雷射光BT0的方向。由於可以將兩反射鏡設置為分別在兩個不平行的方向上掃描雷射光BT0,雷射加工系統100可以平面掃描的方式對待加工樣品SP進行加工。因此,基於上述振鏡105的作動,可以在不同時間段內分別以圖1A所示的多個雷射加工光束BT1、多個雷射加工光束BT2或是多個雷射加工光束BT3對配置在X-Y平面上的待加工樣品SP的不同部分進行加工。在一些實施例中,雷射光BT0可以藉由該些反射鏡中的一者在一方向上掃瞄25 mm至200 mm的範圍,但不以此為限。The oscillating
配置於振鏡105以及待加工樣品SP之間的遠心聚焦鏡106則是用於使各雷射加工光束BT1、BT2、BT3的像面形成為一平面,且像差小,無漸暈。具體請參照圖1B以及圖1C。圖1B是指雷射加工光束BT1、BT2、BT3中任一光束在X-Y平面上沿著X方向的光強度分布示意圖,圖1C是指雷射加工光束BT1、BT2、BT3中任一光束在X-Y平面上沿著Y方向的光強度分布示意圖,其中DI為該光束的光斑半徑。如圖1B以及圖1C所示,任一雷射加工光束在X-Y平面上沿著X方向或Y方向的光強度是一致的能量強度,光斑無漸暈。據此,可以均勻加熱待加工樣品SP上的目標物,例如包含錫或銅等金屬的焊腳,避免因焊腳未被均勻加熱而導致加工良率下降。在一些實施例中,遠心聚焦鏡106的有效焦距(EFL)落在200 mm 至500 mm的範圍內,但不以此為限。The telecentric focusing
藉由上述的雷射加工系統100,可以同時加熱加工樣品SP上的M×N個目標物(例如,焊腳),其中M可以是大於或等於1的正整數,N可以是大於1的正整數。以圖1D為例,其示出了M=2且N=2的情況。相較於習知的雷射加工系統以單一光束進行加熱的狀況,本發明實施例提供的雷射加工系統100可以大幅縮短加工時間。By using the
參照圖1D,在一些較佳的實施例中,雷射光LR入射繞射分光器104前的光斑大小落在3毫米至16毫米的範圍內。據此可以使雷射加工光束BT1、BT2、BT3在X-Y平面上的光斑直徑2DI落在15 μm至450 μm的範圍內。在一些較佳的實施例中,雷射加工光束BT1、BT2、BT3的功率密度(power density)落在4 W/mm
2至2000 W/mm
2的範圍內。在一些較佳的實施例中,光斑間距D1、D2可以落在100 μm至900 μm的範圍內,但不以此為限。
Referring to FIG. 1D , in some preferred embodiments, the spot size of the laser light LR before entering the
同時參照圖1D以及圖2,圖2繪示根據本發明實施例的雷射加工系統的示意圖。在本實施例中,雷射加工系統200包括雷射源101、光準直器102、擴束器103、繞射分光器104、光束縮放器(DOE tuner)107、振鏡105以及遠心聚焦鏡106。光束縮放器107用於調整光斑直徑2DI以及光斑間距D1、D2。在一些實施例中,可以藉由光束縮放器107縮小光斑直徑2DI以及光斑間距D1、D2至原尺寸的80%,以及放大光斑直徑2DI以及光斑間距D1、D2至原尺寸的120%,但不以此為限。藉由配置光束縮放器107在雷射加工系統200中,使得光斑直徑2DI以及光斑間距D1、D2可調,可以大幅增加雷射加工系統200的裕度。Referring to FIG. 1D and FIG. 2 at the same time, FIG. 2 is a schematic diagram of a laser processing system according to an embodiment of the present invention. In this embodiment, the
參照圖3A、圖3B以及圖3C,圖3A是根據本發明實施例的雷射加工系統的示意圖,圖3B以及圖3C是根據本發明實施例的雷射加工光束示意圖。3A, 3B and 3C, FIG. 3A is a schematic diagram of a laser processing system according to an embodiment of the present invention, and FIG. 3B and FIG. 3C are schematic diagrams of laser processing beams according to an embodiment of the present invention.
雷射加工系統300包括雷射源101、光準直器102、擴束器103、繞射分光器104、振鏡105、遠心聚焦鏡106、光罩108以及投影鏡頭109。The
光罩108配置於遠心聚焦鏡106以及待加工樣品SP之間,包括不透光區以及分立的多個對應雷射加工光束BT1、BT2、BT3的透光區。各透光區的輪廓可以是各種多邊形或圓形中的任一種。在一實施例中,光罩108的各透光區的輪廓是矩形,據此使得投影在待加工樣品SP上的雷射加工光束BT1、BT2、BT3形成為矩形光斑LS1,如圖3B所示。在一實施例中,光罩108的各透光區的輪廓是三角形,據此使得投影在待加工樣品SP上的雷射加工光束BT1、BT2、BT3形成為三角形光斑LS2,如圖3C所示。The
在一些替代的實施例中,光罩108被配置於雷射源101以及繞射分光器104之間且包括不透光區以及一個透光區。透光區的輪廓可以是各種多邊形或圓形中的任一種。在一實施例中,光罩108的透光區的輪廓是矩形,據此使得投影在待加工樣品SP上的雷射加工光束BT1、BT2、BT3形成為矩形光斑LS1,如圖3B所示。在一實施例中,光罩108的透光區的輪廓是三角形,據此使得投影在待加工樣品SP上的雷射加工光束BT1、BT2、BT3形成為三角形光斑LS2,如圖3C所示。據此,可以針對不同配置(configuration)的目標物(例如包含錫或銅等金屬的焊腳),改變光斑的形狀,遮擋掉不需要的光,提高加工精度。In some alternative embodiments, the
投影鏡頭109被配置在遠心聚焦鏡106以及待加工樣品SP之間,藉由其內的多個透鏡對雷射加工光束BT1、BT2、BT3進行聚焦、光斑尺寸縮放以及消除像差等調整,據此提高加工良率。The
綜上所述,本發明實施例提供的雷射加工系統利用光準直器以及遠心聚焦鏡改善雷射光斑的品質,尤其藉由繞射分光器達到多光束同時加工的功能。據此,雷射加工系統可以具備良好的加工效能、精度以及良率。In summary, the laser processing system provided by the embodiment of the present invention utilizes a light collimator and a telecentric focusing lens to improve the quality of the laser spot, and in particular, achieves the function of simultaneous multi-beam processing by using a diffraction beam splitter. Accordingly, the laser processing system can have good processing performance, precision and yield.
100、200、300:雷射加工系統100, 200, 300: Laser processing system
101:雷射源101: Laser Source
102:光準直器102: Light collimator
103:擴束器103: Beam Expander
104:繞射分光器104: diffraction beam splitter
105:振鏡105: Vibrating mirror
106:遠心聚焦鏡106:Telecentric focusing lens
107:光束縮放器107: beam expander
108:光罩108: Photomask
109:投影鏡頭109: Projection lens
110:反射鏡110: Reflector
BT0:雷射光BT0: Laser light
BT1、BT2、BT3:雷射加工光束BT1, BT2, BT3: Laser processing beam
D1、D2:光斑間距D1, D2: light spot distance
DI:光斑半徑DI: Spot Radius
LR:雷射光LR:Laser light
LS0、LS1、LS2:光斑LS0, LS1, LS2: light spot
SP:待加工樣品SP: Samples to be processed
X、Y、Z:方向X, Y, Z: direction
圖1A是根據本發明實施例的雷射加工系統的示意圖。 圖1B以及圖1C是根據本發明實施例的雷射加工光束的強度分布示意圖。 圖1D是根據本發明實施例的雷射加工光束示意圖。 圖2是根據本發明實施例的雷射加工系統的示意圖。 圖3A是根據本發明實施例的雷射加工系統的示意圖。 圖3B以及圖3C是根據本發明實施例的雷射加工光束示意圖。 FIG. 1A is a schematic diagram of a laser processing system according to an embodiment of the present invention. FIG. 1B and FIG. 1C are schematic diagrams of the intensity distribution of a laser processing beam according to an embodiment of the present invention. FIG. 1D is a schematic diagram of a laser processing beam according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a laser processing system according to an embodiment of the present invention. FIG. 3A is a schematic diagram of a laser processing system according to an embodiment of the present invention. FIG. 3B and FIG. 3C are schematic diagrams of a laser processing beam according to an embodiment of the present invention.
100:雷射加工系統 100:Laser processing system
101:雷射源 101:Laser source
102:光準直器 102: Light collimator
103:擴束器 103: beam expander
104:繞射分光器 104: diffraction spectrometer
105:振鏡 105: Vibration mirror
106:遠心聚焦鏡 106: Telecentric focusing lens
BT0:雷射光 BT0: Laser light
BT1、BT2、BT3:雷射加工光束 BT1, BT2, BT3: Laser processing beam
LR:雷射光 LR: Laser light
SP:待加工樣品 SP: Samples to be processed
X、Y、Z:方向 X, Y, Z: direction
Claims (9)
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201139029A (en) * | 2009-12-07 | 2011-11-16 | J P Sercel Associates Inc | Laser lift off systems and methods |
| TW201944669A (en) * | 2018-04-10 | 2019-11-16 | 東台精機股份有限公司 | Laser device for additive manufacturing and operation method thereof |
| TW202027128A (en) * | 2018-12-28 | 2020-07-16 | 大陸商上海微電子裝備(集團)股份有限公司 | Laser annealing device for SiC substrate |
| US20210162540A1 (en) * | 2016-08-26 | 2021-06-03 | Multiphoton Optics Gmbh | Device and method for laser-assisted machining of bodies or surfaces |
| TW202124075A (en) * | 2019-12-20 | 2021-07-01 | 日商V科技股份有限公司 | Laser irradiation device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201139029A (en) * | 2009-12-07 | 2011-11-16 | J P Sercel Associates Inc | Laser lift off systems and methods |
| US20210162540A1 (en) * | 2016-08-26 | 2021-06-03 | Multiphoton Optics Gmbh | Device and method for laser-assisted machining of bodies or surfaces |
| TW201944669A (en) * | 2018-04-10 | 2019-11-16 | 東台精機股份有限公司 | Laser device for additive manufacturing and operation method thereof |
| TW202027128A (en) * | 2018-12-28 | 2020-07-16 | 大陸商上海微電子裝備(集團)股份有限公司 | Laser annealing device for SiC substrate |
| TW202124075A (en) * | 2019-12-20 | 2021-07-01 | 日商V科技股份有限公司 | Laser irradiation device |
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