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TWI873610B - Imaging device and fingerprint recognition device - Google Patents

Imaging device and fingerprint recognition device Download PDF

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TWI873610B
TWI873610B TW112115873A TW112115873A TWI873610B TW I873610 B TWI873610 B TW I873610B TW 112115873 A TW112115873 A TW 112115873A TW 112115873 A TW112115873 A TW 112115873A TW I873610 B TWI873610 B TW I873610B
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imaging device
hole
light
infrared light
substrate
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TW202443236A (en
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周源栩
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大陸商信揚科技(佛山)有限公司
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Abstract

An imaging device and fingerprint recognition device. The imaging device includes a shell, a sensor, a filter, and a metalenses. The shell is equipped with a accommodating cavity and a light through hole connected to the accommodating cavity in the first direction. The sensor is assembled in the accommodating cavity, and the sensor and the light through hole are arranged relative in the first direction to receive far-infrared light and achieve imaging. The filter is assembled in the accommodating cavity, and is positioned between the light through hole and the sensor in the first direction. A metalenses is assembled in the accommodating cavity, which includes a substrate and a metasurface structure. The substrate is located between the the light through hole and the filter in the first direction, and the metasurface structure is connected to the side of the substrate facing the light through hole or the side of the substrate away from the light through hole. The above imaging device is advantageous for simplifying the structure.

Description

成像裝置及指紋識別裝置 Imaging device and fingerprint recognition device

本申請涉及光學技術領域,特別涉及一種成像裝置及指紋識別裝置。 This application relates to the field of optical technology, and in particular to an imaging device and a fingerprint recognition device.

紅外成像技術係一種藉由獲取目標物體熱輻射資訊並將其轉換為人眼可見圖像之技術。該成像技術相比可見光成像技術,具有隱蔽性與抗干擾能力強、環境適應性好之優勢。紅外成像裝置中通常採用光學鏡頭將目標物體之發射之紅外光聚焦至感測器,習知之光學鏡頭需要採用複數光學鏡片組成之鏡頭組使光線聚焦或發散,導致紅外成像裝置結構複雜。 Infrared imaging technology is a technology that obtains the thermal radiation information of the target object and converts it into an image visible to the human eye. Compared with visible light imaging technology, this imaging technology has the advantages of concealment, strong anti-interference ability, and good environmental adaptability. Infrared imaging devices usually use optical lenses to focus the infrared light emitted by the target object onto the sensor. The conventional optical lens needs to use a lens group composed of multiple optical lenses to focus or diverge the light, resulting in a complex structure of the infrared imaging device.

有鑑於此,有必要提供一種成像裝置,有利於簡化結構。 In view of this, it is necessary to provide an imaging device that is conducive to simplifying the structure.

本申請之實施例提供一種成像裝置,包括殼體、感測器、濾波片與超透鏡。所述殼體設有容納腔與沿第一方向連通所述容納腔之光通孔,所述光通孔便於穿過目標物體之散發之遠紅外光通過。所述感測器裝配於所述容納腔中,所述感測器與所述光通孔於所述第一方向上相對設置,用於接收所述遠紅外光且實現成像。所述濾波片裝配於所述容納腔中,所述濾波片於所述第一方向上位於所述光通孔與所述感測器之間,用於過濾並消除遠紅外光波長以外 之光。所述超透鏡裝配於所述容納腔中,所述超透鏡包括基板與超表面結構,所述基板於所述第一方向上位於所述光通孔與所述濾波片之間,所述超表面結構連接於所述基板朝向所述光通孔之一側或所述基板遠離所述光通孔之一側,所述超表面結構包括複數陣列排布且沿所述第一方向延伸之柱狀結構單元,所述基板用於便於所述遠紅外光穿過,所述超表面結構用於使所述遠紅外光彎折並使彎折後之所述遠紅外光穿過所述濾波片聚焦至所述感測器。 The embodiment of the present application provides an imaging device, including a housing, a sensor, a filter and a super lens. The housing is provided with a receiving cavity and a light through hole connected to the receiving cavity along a first direction, and the light through hole facilitates the passage of far infrared light emitted by a target object. The sensor is mounted in the receiving cavity, and the sensor and the light through hole are arranged opposite to each other in the first direction, and are used to receive the far infrared light and realize imaging. The filter is mounted in the receiving cavity, and the filter is located between the light through hole and the sensor in the first direction, and is used to filter and eliminate light other than the far infrared light wavelength. The superlens is assembled in the accommodating cavity. The superlens includes a substrate and a supersurface structure. The substrate is located between the optical through hole and the filter plate in the first direction. The supersurface structure is connected to one side of the substrate facing the optical through hole or one side of the substrate away from the optical through hole. The supersurface structure includes a plurality of columnar structural units arranged in an array and extending along the first direction. The substrate is used to facilitate the far infrared light to pass through. The supersurface structure is used to bend the far infrared light and make the bent far infrared light pass through the filter plate and focus on the sensor.

本申請之實施例包括之技術效果:上述成像裝置中,藉由單個超透鏡能夠實現折射光與聚焦之功能,與傳統透鏡組相比,具有結構簡單、體積小與輕薄之優點,有利於簡化成像裝置結構。並且於成像裝置之製備過程中,能夠減少傳統透鏡組多鏡片組裝時產生之公差問題,有利於提高生產效率且降低生產成本。 The technical effects of the embodiments of this application include: In the above-mentioned imaging device, a single super lens can realize the functions of refracting light and focusing. Compared with the traditional lens set, it has the advantages of simple structure, small size and thinness, which is conducive to simplifying the structure of the imaging device. In addition, in the preparation process of the imaging device, it can reduce the tolerance problem caused by the assembly of multiple lenses of the traditional lens set, which is conducive to improving production efficiency and reducing production costs.

可選地,於本申請之一些實施例中,所述超透鏡滿足Binary2面型相位公式

Figure 112115873-A0305-12-0002-1
,其中,φ為相位;M為衍射階數;N為多項式係數之級數;Ai為正規化徑向孔徑座標中ρ2i之多項式係數;ρ為元件半徑,Ai之範圍滿足5至30。 Optionally, in some embodiments of the present application, the superlens satisfies the Binary2 surface phase formula
Figure 112115873-A0305-12-0002-1
, where φ is the phase; M is the diffraction order; N is the degree of the polynomial coefficient; Ai is the polynomial coefficient of ρ 2i in the normalized radial aperture coordinate; ρ is the element radius, and the range of Ai is 5 to 30.

可選地,於本申請之一些實施例中,沿所述第一方向,所述柱狀結構單元之高度滿足3μm至15μm。 Optionally, in some embodiments of the present application, along the first direction, the height of the columnar structure unit satisfies 3μm to 15μm.

可選地,於本申請之一些實施例中,所述柱狀結構單元垂直於所述第一方向之截面呈圓形,且所述圓形之直徑範圍滿足0.5μm至5μm。 Optionally, in some embodiments of the present application, the cross section of the columnar structural unit perpendicular to the first direction is circular, and the diameter of the circle ranges from 0.5μm to 5μm.

可選地,於本申請之一些實施例中,所述柱狀結構單元垂直於所述第一方向之截面呈矩形,且所述矩形之相鄰之兩條邊之長度範圍分別滿足0.5μm至5μm。 Optionally, in some embodiments of the present application, the cross-section of the columnar structural unit perpendicular to the first direction is rectangular, and the length range of two adjacent sides of the rectangle satisfies 0.5μm to 5μm respectively.

可選地,於本申請之一些實施例中,所述超透鏡沿所述第一方向可活動地設於所述光通孔與所述濾波片之間。 Optionally, in some embodiments of the present application, the super lens is movably disposed between the light through hole and the filter plate along the first direction.

可選地,於本申請之一些實施例中,所述遠紅外光之波長滿足8μm至12μm。 Optionally, in some embodiments of the present application, the wavelength of the far infrared light satisfies 8μm to 12μm.

可選地,於本申請之一些實施例中,所述基底為由硫系玻璃、硫化鋅、硒化鋅、晶體鍺、晶體矽中之一種材料製成。 Optionally, in some embodiments of the present application, the substrate is made of one of chalcogenide glass, zinc sulfide, zinc selenide, crystalline germanium, and crystalline silicon.

可選地,於本申請之一些實施例中,所述超表面結構由晶體矽或晶體鍺製成。 Optionally, in some embodiments of the present application, the metasurface structure is made of crystalline silicon or crystalline germanium.

本申請之實施例還提供一種指紋識別裝置,包括上述實施例中任意一種所述之成像裝置。 The embodiments of this application also provide a fingerprint recognition device, including any imaging device described in the above embodiments.

100:成像裝置 100: Imaging device

200:指紋識別裝置 200: Fingerprint recognition device

10:殼體 10: Shell

11:容納腔 11: Accommodation chamber

12:光通孔 12: Light through hole

20:感測器 20: Sensor

30:濾波片 30: Filter

40:超透鏡 40:Super lens

41:基板 41: Substrate

42:超表面結構 42:Supersurface structure

421:柱狀結構單元 421: Columnar structure unit

43:增透膜層 43: Anti-reflection film layer

X:第一方向 X: First direction

圖1示意了一實施例之成像裝置之結構示意圖。 Figure 1 shows a schematic diagram of the structure of an imaging device of an embodiment.

圖2示意了一實施例之成像裝置中超透鏡之結構示意圖。 Figure 2 shows a schematic diagram of the structure of a super lens in an imaging device of an embodiment.

圖3示意了一實施例之成像裝置中柱狀結構單元之第一結構示意圖。 Figure 3 shows a first structural schematic diagram of a columnar structure unit in an imaging device of an embodiment.

圖4示意了一實施例之成像裝置中柱狀結構單元之第二結構示意圖。 Figure 4 shows a second structural schematic diagram of a columnar structure unit in an imaging device of an embodiment.

圖5示意了一實施例之散熱裝置之指紋識別裝置之結構示意圖。 FIG5 shows a schematic diagram of the structure of a fingerprint recognition device of a heat dissipation device according to an embodiment.

下面將結合本申請實施例中之附圖,對本申請實施例中之技術方案進行描述,顯然,所描述之實施例僅僅係本申請一部分實施例,而不係全部之實施例。 The following will describe the technical solutions in the embodiments of this application in conjunction with the attached figures in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of them.

需要說明的係,當元件被稱為“裝設於”另一個元件,它可以直接於另一個元件上或者亦可以存於居中之元件。當一個元件被認為係“設置於”另一個元件,它可以係直接設置於另一個元件上或者可能同時存於居中元件。 It should be noted that when a component is said to be "mounted on" another component, it can be directly on the other component or it can also be located in a central component. When a component is considered to be "set on" another component, it can be directly set on the other component or it can also be located in a central component at the same time.

除非另有定義,本文所使用之所有之技術與科學術語與屬於本申請之技術領域之技術人員通常理解之含義相同。本文中於本申請之說明書中所使用之術語僅係為描述具體之實施例之目的不係旨在於限制本申請。本文所使用之術語“或/及”包括一個或複數相關之所列項目之任意之與所有之組合。 Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application. The terms used in this specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "or/and" used in this article includes any and all combinations of one or more related listed items.

本申請之實施例提供之一種成像裝置,包括殼體、感測器、濾波片與超透鏡。殼體設有容納腔與沿第一方向連通容納腔之光通孔,光通孔便於目標物體之散發之遠紅外光通過。感測器裝配於容納腔中,感測器與光通孔於第一方向上相對設置,用於接收遠紅外光且實現成像。濾波片裝配於容納腔中,濾波片於第一方向上位於光通孔與感測器之間,用於過濾並消除遠紅外光波長以外之光。超透鏡裝配於容納腔中,超透鏡包括基板與超表面結構,基板於第一方向上位於光通孔與濾波片之間,超表面結構連接於基板朝向光通孔之一側或基板遠離光通孔之一側,超表面結構包括複數陣列排布且沿第一方向延伸之柱狀結構單元,基板用於便於遠紅外光穿過,超表面結構用於使遠紅外光彎折並使彎折後之遠紅外光穿過濾波片聚焦至感測器。 An imaging device provided in an embodiment of the present application includes a housing, a sensor, a filter and a super lens. The housing is provided with a receiving cavity and a light through hole connected to the receiving cavity along a first direction, and the light through hole facilitates the passage of far-infrared light emitted by a target object. The sensor is mounted in the receiving cavity, and the sensor and the light through hole are arranged opposite to each other in the first direction, and are used to receive far-infrared light and realize imaging. The filter is mounted in the receiving cavity, and the filter is located between the light through hole and the sensor in the first direction, and is used to filter and eliminate light other than the far-infrared light wavelength. The superlens is assembled in the receiving cavity. The superlens includes a substrate and a supersurface structure. The substrate is located between the optical through hole and the filter plate in the first direction. The supersurface structure is connected to one side of the substrate facing the optical through hole or one side of the substrate away from the optical through hole. The supersurface structure includes a plurality of columnar structural units arranged in an array and extending along the first direction. The substrate is used to facilitate the passage of far-infrared light. The supersurface structure is used to bend the far-infrared light and make the bent far-infrared light pass through the filter plate and focus on the sensor.

上述成像裝置中,藉由單個超透鏡能夠實現折射光與聚焦之功能,與傳統透鏡組相比,具有結構簡單、體積小與輕薄之優點,有利於簡化成像裝置結構。並且於成像裝置之製備過程中,能夠減少傳統透鏡組多鏡片組裝時產生之公差問題,有利於提高生產效率且降低生產成本。 In the above imaging device, a single super lens can realize the functions of refracting light and focusing. Compared with the traditional lens set, it has the advantages of simple structure, small size and thinness, which is conducive to simplifying the structure of the imaging device. In addition, in the preparation process of the imaging device, it can reduce the tolerance problem caused by the assembly of multiple lenses of the traditional lens set, which is conducive to improving production efficiency and reducing production costs.

下面結合附圖,對本申請之一些實施例作詳細說明。 The following is a detailed description of some embodiments of this application in conjunction with the attached figures.

請參閱圖1,本申請之實施例提供一種成像裝置100,包括殼體10、感測器20、濾波片30與超透鏡40。殼體10設有設有容納腔11與沿第一方向X 連通容納腔11之光通孔12。光通孔12用於朝向目標物體以便於目標物體散發之遠紅外光通過,可選地,遠紅外光由目標物體自身輻射產生。 Referring to FIG. 1 , an embodiment of the present application provides an imaging device 100, including a housing 10, a sensor 20, a filter 30 and a super lens 40. The housing 10 is provided with a receiving cavity 11 and a light through hole 12 connected to the receiving cavity 11 along a first direction X. The light through hole 12 is used to face the target object so that the far infrared light emitted by the target object can pass through. Optionally, the far infrared light is generated by the radiation of the target object itself.

感測器20裝配於容納腔11中且與光通孔12於第一方向X上相對設置,感測器20用於接收遠紅外光且實現成像。 The sensor 20 is installed in the accommodating cavity 11 and is arranged opposite to the light through hole 12 in the first direction X. The sensor 20 is used to receive far infrared light and realize imaging.

濾波片30裝配於容納腔11中,濾波片30於第一方向X上位於光通孔12與感測器20之間,用於過濾並消除遠紅外光波長以外之光,便於遠紅外光照射至感測器20,進而便於感測器20清晰成像。 The filter plate 30 is installed in the accommodating cavity 11. The filter plate 30 is located between the light through hole 12 and the sensor 20 in the first direction X. It is used to filter and eliminate light other than the far infrared wavelength, so that the far infrared light can be irradiated to the sensor 20, thereby facilitating clear imaging of the sensor 20.

請一併參閱圖2,超透鏡40裝配於容納腔11中。超透鏡40包括基板41與超表面結構42,基板41於第一方向X上位於光通孔12與濾波片30之間。超表面結構42連接於基板41朝向光通孔12之一側或基板41遠離光通孔12之一側。具體地,當超表面結構42連接於基板41朝向光通孔12之一側時,遠紅外光依次穿過超表面結構42與基板41。當超表面結構42連接於基板41背離光通孔12之一側時,遠紅外光依次穿過基板41與超表面結構42。超表面結構42包括複數陣列排布且沿第一方向X延伸之柱狀結構單元421。 Please refer to FIG. 2 , the superlens 40 is assembled in the accommodating cavity 11. The superlens 40 includes a substrate 41 and a supersurface structure 42, and the substrate 41 is located between the optical through hole 12 and the filter 30 in the first direction X. The supersurface structure 42 is connected to a side of the substrate 41 facing the optical through hole 12 or a side of the substrate 41 away from the optical through hole 12. Specifically, when the supersurface structure 42 is connected to a side of the substrate 41 facing the optical through hole 12, the far-infrared light passes through the supersurface structure 42 and the substrate 41 in sequence. When the supersurface structure 42 is connected to a side of the substrate 41 away from the optical through hole 12, the far-infrared light passes through the substrate 41 and the supersurface structure 42 in sequence. The super surface structure 42 includes a plurality of columnar structural units 421 arranged in an array and extending along the first direction X.

基板41採用對紅外光高透之材料製成,基板41用於便於遠紅外光穿過。可選地,基板41由硫系玻璃、硫化鋅、硒化鋅、晶體鍺、晶體矽中之一種材料製成。 The substrate 41 is made of a material that is highly transparent to infrared light, and the substrate 41 is used to facilitate the passage of far-infrared light. Optionally, the substrate 41 is made of one of chalcogenide glass, zinc sulfide, zinc selenide, crystalline germanium, and crystalline silicon.

柱狀結構單元421採用紅外高折射率材料製成,超表面結構42用於使遠紅外光彎折並使彎折後遠紅外光穿過濾波片30聚焦至感測器20,以便於感測器20清晰成像。可選地,超表面結構42由晶體矽或晶體鍺製成。 The columnar structure unit 421 is made of infrared high refractive index material, and the metasurface structure 42 is used to bend the far infrared light and make the bent far infrared light pass through the filter plate 30 and focus to the sensor 20, so that the sensor 20 can form a clear image. Optionally, the metasurface structure 42 is made of crystalline silicon or crystalline germanium.

可以理解之係,各柱狀結構單元421之間可填充空氣或對紅外光高透之材料。 It can be understood that the space between each columnar structure unit 421 can be filled with air or a material that is highly transparent to infrared light.

需要說明之係,超表面結構42採用半導體工藝製備,包括步進式光刻、分步掃描式光刻、納米壓印、鐳射直寫、金屬剝離或ICP刻蝕等。 It should be noted that the metasurface structure 42 is prepared using semiconductor processes, including step-by-step lithography, step-by-step scanning lithography, nanoimprinting, laser direct writing, metal lift-off or ICP etching, etc.

上述成像裝置100中,藉由單個超透鏡40能夠實現折射光與聚焦之功能,與傳統透鏡組相比,具有結構簡單、體積小與輕薄之優點,有利於簡化成像裝置100結構。並且於成像裝置100之製備過程中,能夠減少傳統透鏡組多鏡片組裝時產生之公差問題,有利於提高生產效率且降低生產成本。 In the imaging device 100, the single super lens 40 can realize the functions of refracting light and focusing. Compared with the traditional lens set, it has the advantages of simple structure, small size and thinness, which is conducive to simplifying the structure of the imaging device 100. In addition, during the preparation process of the imaging device 100, the tolerance problem generated when assembling multiple lenses of the traditional lens set can be reduced, which is conducive to improving production efficiency and reducing production costs.

於一些實施例中,超透鏡40滿足Binary2面型相位公式

Figure 112115873-A0305-12-0006-2
,其中,φ為相位;M為衍射階數;N為多項式係數之級數;Ai為正規化徑向孔徑座標中ρ2i之多項式係數,ρ為元件半徑。藉由超透鏡40滿足Binary2面型相位公式,以於超透鏡整個表面上引入連續相變,能夠便於提升超透鏡40之折射與聚焦效果。 In some embodiments, the superlens 40 satisfies the Binary2 surface phase formula
Figure 112115873-A0305-12-0006-2
, where φ is the phase; M is the diffraction order; N is the order of the polynomial coefficient; Ai is the polynomial coefficient of ρ 2i in the normalized radial aperture coordinate, and ρ is the element radius. By having the superlens 40 satisfy the Binary2 surface phase formula, a continuous phase change is introduced on the entire surface of the superlens, which can facilitate the improvement of the refraction and focusing effects of the superlens 40.

於一些實施例中,Ai之範圍滿足5至30,以進一步提升超透鏡40之折射與聚焦效果。可選地,Ai為5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、29、30以及滿足5至30範圍內其它任意數值中之一個。 In some embodiments, the range of A i satisfies 5 to 30 to further enhance the refraction and focusing effects of the super lens 40. Optionally, A i is 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30 and any other value within the range of 5 to 30.

請繼續參閱圖2,於一些實施例中,柱狀結構單元421之高度滿足3μm至15μm,以使柱狀結構單元421之高度介於遠紅外光波長量級,進而提升超透鏡40之折射與聚焦效果。可選地,柱狀結構單元421之高度為3μm、4μm、5μm、6μm、7μm、8μm、9μm、1()μm、11μm、12μm、13μm、14μm、15μm以及滿足3μm至15μm範圍內其它任意數值中之一個。 Please continue to refer to FIG. 2. In some embodiments, the height of the columnar structure unit 421 satisfies 3μm to 15μm, so that the height of the columnar structure unit 421 is between the wavelength of far infrared light, thereby improving the refraction and focusing effect of the super lens 40. Optionally, the height of the columnar structure unit 421 is 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, 10μm, 11μm, 12μm, 13μm, 14μm, 15μm, and any other value within the range of 3μm to 15μm.

於一些實施例中,超透鏡40還包括增透膜層43,增透膜層43連接於基板41朝向光通孔12之一側與/或基板41遠離光通孔12之一側,用於增加遠紅外光之透過率。 In some embodiments, the super lens 40 further includes an anti-reflection film layer 43, which is connected to a side of the substrate 41 facing the light through hole 12 and/or a side of the substrate 41 away from the light through hole 12, for increasing the transmittance of far infrared light.

請參閱圖3,於一些實施例中,柱狀結構單元421垂直於第一方向X之截面呈圓形,且圓形之直徑範圍滿足0.5μm至5μm,以使柱狀結構單元421之直徑介於亞波長量級,進而提升超透鏡40之折射與聚焦效果。可選地,圓形 之直徑為0.5μm、1μm、1.5μm、2μm、2.5μm、3μm、3.5μm、4μm、4.5μm、5μm以及滿足0.5μm至5μm範圍內其它任意數值中之一個。 Please refer to FIG. 3. In some embodiments, the cross section of the columnar structure unit 421 perpendicular to the first direction X is circular, and the diameter of the circle satisfies the range of 0.5μm to 5μm, so that the diameter of the columnar structure unit 421 is in the sub-wavelength order, thereby improving the refraction and focusing effect of the super lens 40. Optionally, the diameter of the circle is 0.5μm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, and any other value within the range of 0.5μm to 5μm.

於一些實施例中,超表面結構42中之所有柱狀結構單元421之高度相同,以進一步提升超透鏡40之折射與聚焦效果。 In some embodiments, all columnar structural units 421 in the metasurface structure 42 have the same height to further enhance the refraction and focusing effects of the superlens 40.

請參閱圖4,於一些實施例中,柱狀結構單元421垂直於第一方向X之截面呈矩形,且矩形之相鄰之兩條邊之長度範圍分別滿足0.5μm至5μm,以使柱狀結構單元421之長寬介於亞波長量級,進而提升超透鏡40之折射與聚焦效果。可選地,相鄰之兩條邊之長度分別為0.5μm、1μm、1.5μm、2μm、2.5μm、3μm、3.5μm、4μm、4.5μm、5μm以及滿足0.5μm至5μm範圍內其它任意數值中之一個。 Please refer to FIG. 4 . In some embodiments, the cross section of the columnar structure unit 421 perpendicular to the first direction X is rectangular, and the length range of the two adjacent sides of the rectangle satisfies 0.5μm to 5μm, so that the length and width of the columnar structure unit 421 are between the sub-wavelength level, thereby improving the refraction and focusing effect of the super lens 40. Optionally, the lengths of the two adjacent sides are 0.5μm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, and any other value within the range of 0.5μm to 5μm.

可以理解之係,柱狀結構單元421還可以為橢圓柱形、中空橢圓柱形、中空長方柱形、中空正方柱形等結構。 It is understandable that the columnar structure unit 421 can also be an elliptical cylinder, a hollow elliptical cylinder, a hollow rectangular cylinder, a hollow square cylinder, etc.

於一些實施例中,超透鏡40沿第一方向X可活動地設於光通孔12與濾波片30之間,以便於調節超透鏡40與感測器20之間之間距,便於感測器20清晰成像。 In some embodiments, the super lens 40 is movably disposed between the light through hole 12 and the filter 30 along the first direction X, so as to adjust the distance between the super lens 40 and the sensor 20, so as to facilitate clear imaging of the sensor 20.

於一些實施例中,超表面結構42中之柱狀結構單元421可以佈置成圓形、扇形、正六邊、正方形中之一種陣列。本領域技術人員應認識到,超表面結構42中之柱狀結構單元421還可以包括其他形式之陣列佈置,所有這些變型方案均涵蓋於本申請之範圍內。 In some embodiments, the columnar structural units 421 in the metasurface structure 42 can be arranged in a circular, fan-shaped, regular hexagonal, or square array. Those skilled in the art should recognize that the columnar structural units 421 in the metasurface structure 42 can also include other forms of array arrangements, and all of these variations are within the scope of this application.

於一些實施例中,超透鏡40之周側固定於承載座中,承載座沿第一方向X可滑動地連接於殼體10,承載座用於帶動超透鏡40沿第一方向X活動。可選地,承載座連接於電機或氣缸等驅動件,或承載座連接於記憶合金製成之電致伸縮元件,藉由對電致伸縮元件輸入不同大小之電流使電致伸縮元件進行不同程度伸縮以帶動承載座移動。 In some embodiments, the periphery of the superlens 40 is fixed in a support seat, and the support seat is slidably connected to the housing 10 along the first direction X, and the support seat is used to drive the superlens 40 to move along the first direction X. Optionally, the support seat is connected to a drive member such as a motor or a cylinder, or the support seat is connected to an electrostrictive element made of a memory alloy, and the electrostrictive element is extended to different degrees by inputting currents of different magnitudes into the electrostrictive element to drive the support seat to move.

於一些實施例中,遠紅外光之波長範圍為8μm至12μm,以便於成像裝置100對人體散發之遠紅外光成像,便於應用於指紋識別、無人駕駛、體溫檢測等人體感應之領域。 In some embodiments, the wavelength range of far infrared light is 8μm to 12μm, so that the imaging device 100 can image the far infrared light emitted by the human body, which is convenient for application in human body sensing fields such as fingerprint recognition, driverless driving, and body temperature detection.

進一步地,遠紅外光之波長範圍為10μm,以進一步便於成像裝置100對人體散發之遠紅外光成像。 Furthermore, the wavelength range of the far infrared light is 10μm, so as to further facilitate the imaging device 100 to image the far infrared light emitted by the human body.

請參閱圖5,本申請之實施例還提供一種指紋識別裝置200,包括上述實施例中任意一種之成像裝置100。指紋識別裝置200還包括識別結構,識別結構用於接收成像裝置100生成之紅外指紋圖像並進行指紋識別。 Please refer to Figure 5. The embodiment of the present application also provides a fingerprint recognition device 200, including any one of the imaging devices 100 in the above embodiments. The fingerprint recognition device 200 also includes a recognition structure, which is used to receive the infrared fingerprint image generated by the imaging device 100 and perform fingerprint recognition.

綜上,上述成像裝置100與指紋識別裝置200中,藉由單個超透鏡40能夠實現折射光與聚焦之功能,與傳統透鏡組相比,具有結構簡單、體積小與輕薄之優點,有利於簡化成像裝置100結構。並且於成像裝置100之製備過程中,能夠減少傳統透鏡組多鏡片組裝時產生之公差問題,有利於提高生產效率且降低生產成本。 In summary, the imaging device 100 and fingerprint recognition device 200 described above can realize the functions of refracting light and focusing through a single super lens 40. Compared with the traditional lens set, it has the advantages of simple structure, small size and thinness, which is conducive to simplifying the structure of the imaging device 100. In addition, during the preparation process of the imaging device 100, it can reduce the tolerance problem caused by the assembly of multiple lenses of the traditional lens set, which is conducive to improving production efficiency and reducing production costs.

本技術領域之普通技術人員應當認識到,以上之實施例僅係用以說明本申請,而並非用作為對本申請之限定,僅要於本申請之實質精神範圍內,對以上實施例所作之適當改變與變化均落於本申請公開之範圍內。 Ordinary technical personnel in this technical field should recognize that the above embodiments are only used to illustrate this application, and are not used to limit this application. As long as they are within the scope of the essence of this application, appropriate changes and modifications to the above embodiments are within the scope of disclosure of this application.

100:成像裝置 100: Imaging device

10:殼體 10: Shell

11:容納腔 11: Accommodation chamber

12:光通孔 12: Light through hole

20:感測器 20: Sensor

30:濾波片 30: Filter

40:超透鏡 40:Super lens

X:第一方向 X: First direction

Claims (10)

一種成像裝置,其改良在於,包括:殼體,設有容納腔與沿第一方向連通所述容納腔之光通孔,所述光通孔便於目標物體之散發之遠紅外光通過;感測器,裝配於所述容納腔中,所述感測器與所述光通孔於所述第一方向上相對設置,用於接收所述遠紅外光且實現成像;濾波片,裝配於所述容納腔中,所述濾波片於所述第一方向上位於所述光通孔與所述感測器之間,用於過濾並消除遠紅外光波長以外之光;超透鏡,裝配於所述容納腔中,所述超透鏡包括基板與超表面結構,所述基板於所述第一方向上位於所述光通孔與所述濾波片之間,所述超表面結構連接於所述基板朝向所述光通孔之一側或所述基板遠離所述光通孔之一側,所述超表面結構包括複數陣列排布且沿所述第一方向延伸之柱狀結構單元,所述基板用於便於所述遠紅外光穿過,所述超表面結構用於使所述遠紅外光彎折並使彎折後之所述遠紅外光穿過所述濾波片聚焦至所述感測器;各所述柱狀結構單元之間填充對紅外光高透之材料。 An imaging device, the improvement of which is that it comprises: a housing, provided with a receiving cavity and a light through hole connected to the receiving cavity along a first direction, the light through hole facilitating the passage of far-infrared light emitted by a target object; a sensor, mounted in the receiving cavity, the sensor and the light through hole being arranged opposite to each other in the first direction, for receiving the far-infrared light and realizing imaging; a filter, mounted in the receiving cavity, the filter being located between the light through hole and the sensor in the first direction, for filtering and eliminating light other than the far-infrared light wavelength; a super lens, mounted in the receiving cavity, the super lens The invention comprises a substrate and a metasurface structure. The substrate is located between the optical through hole and the filter plate in the first direction. The metasurface structure is connected to one side of the substrate facing the optical through hole or one side of the substrate away from the optical through hole. The metasurface structure comprises a plurality of columnar structural units arranged in an array and extending along the first direction. The substrate is used to facilitate the far infrared light to pass through. The metasurface structure is used to bend the far infrared light and make the bent far infrared light pass through the filter plate and focus to the sensor. The space between each of the columnar structural units is filled with a material with high transmittance to infrared light. 如請求項1所述之成像裝置,其中,所述超透鏡滿足Binary2面型相位公式
Figure 112115873-A0305-13-0001-3
,其中,φ為相位;M為衍射階數;N為多項式係數之級數;Ai為正規化徑向孔徑座標中ρ2i之多項式係數;ρ為元件半徑,Ai之範圍滿足5至30。
The imaging device as claimed in claim 1, wherein the superlens satisfies the Binary2 surface phase formula
Figure 112115873-A0305-13-0001-3
, where φ is the phase; M is the diffraction order; N is the degree of the polynomial coefficient; Ai is the polynomial coefficient of ρ 2i in the normalized radial aperture coordinate; ρ is the element radius, and the range of Ai is 5 to 30.
如請求項1所述之成像裝置,其中,沿所述第一方向,所述柱狀結構單元之高度滿足3μm至15μm。 An imaging device as described in claim 1, wherein the height of the columnar structure unit along the first direction satisfies 3μm to 15μm. 如請求項3所述之成像裝置,其中,所述柱狀結構單元垂直於所述第一方向之截面呈圓形,且所述圓形之直徑範圍滿足0.5μm至5μm。 An imaging device as described in claim 3, wherein the cross section of the columnar structure unit perpendicular to the first direction is circular, and the diameter range of the circle satisfies 0.5μm to 5μm. 如請求項3所述之成像裝置,其中,所述柱狀結構單元垂直於所述第一方向之截面呈矩形,且所述矩形之相鄰之兩條邊之長度範圍分別滿足0.5μm至5μm。 An imaging device as described in claim 3, wherein the cross section of the columnar structure unit perpendicular to the first direction is rectangular, and the length range of two adjacent sides of the rectangle satisfies 0.5μm to 5μm respectively. 如請求項1所述之成像裝置,其中,所述超透鏡沿所述第一方向可活動地設於所述光通孔與所述濾波片之間。 An imaging device as described in claim 1, wherein the super lens is movably disposed between the light passage hole and the filter plate along the first direction. 如請求項1所述之成像裝置,其中,所述遠紅外光之波長滿足8μm至12μm。 An imaging device as described in claim 1, wherein the wavelength of the far infrared light satisfies 8μm to 12μm. 如請求項1所述之成像裝置,其中,所述基板由硫系玻璃、硫化鋅、硒化鋅、晶體鍺、晶體矽中之一種材料製成。 An imaging device as described in claim 1, wherein the substrate is made of one of chalcogenide glass, zinc sulfide, zinc selenide, crystalline germanium, and crystalline silicon. 如請求項1所述之成像裝置,其中,所述超表面結構由晶體矽或晶體鍺製成。 An imaging device as described in claim 1, wherein the metasurface structure is made of crystalline silicon or crystalline germanium. 一種指紋識別裝置,其改良在於,包括如請求項1至9中任意一項所述之成像裝置。 A fingerprint recognition device, the improvement of which comprises an imaging device as described in any one of claims 1 to 9.
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