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TWI872825B - Resin composition, prepreg, and printed circuit boardwith modified hollow microspheres - Google Patents

Resin composition, prepreg, and printed circuit boardwith modified hollow microspheres Download PDF

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TWI872825B
TWI872825B TW112145472A TW112145472A TWI872825B TW I872825 B TWI872825 B TW I872825B TW 112145472 A TW112145472 A TW 112145472A TW 112145472 A TW112145472 A TW 112145472A TW I872825 B TWI872825 B TW I872825B
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hollow microspheres
modified hollow
resin composition
weight
parts
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TW112145472A
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TW202521634A (en
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林軒民
巫勝彥
曾柏凱
龍行
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聯茂電子股份有限公司
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Abstract

A resin composition, prepreg, and printed circuit board with modified hollow microspheres is provided. The resin composition includes 10 to 80 parts by weight of modified hollow microsphere, 5 to 60 parts by weight of polyphenylene ether resin, and 5 to 30 parts by weight of hardener. The modified hollow microsphere is provided by the following steps: (a) mixing hollow spherical silicon dioxide, siloxane coupling agent and ethanol solution evenly and stir for a first predetermined time; (b) adding alkaline solution and continue stirring for a second predetermined time; (c) processing centrifuge and decant the ethanol clarified to remove the powder; and (d) drying the powder under vacuum to obtain the modified hollow microsphere.

Description

含有改質中空微球的樹脂組成物、預浸片及印刷電路板Resin composition, prepreg and printed circuit board containing modified hollow microspheres

本發明涉及一種樹脂組成物預浸片及印刷電路板,特別是涉及一種含有改質中空微球的樹脂組成物預浸片及印刷電路板。The present invention relates to a resin composition prepreg sheet and a printed circuit board, and in particular to a resin composition prepreg sheet containing modified hollow microspheres and a printed circuit board.

為了因應高頻傳輸的需求,用於電子組件的介電基材須具有低介電常數、低介電損耗等特性。現有技術會在介電基材中加入中空填料,利用填料中帶有低介電常數的空氣的特性來降低介電基材的介電常數與介電損耗。In order to meet the needs of high-frequency transmission, the dielectric substrate used in electronic components must have characteristics such as low dielectric constant and low dielectric loss. The existing technology adds hollow fillers to the dielectric substrate and uses the characteristics of air with low dielectric constant in the fillers to reduce the dielectric constant and dielectric loss of the dielectric substrate.

進一步地,硼矽酸鹽玻璃中空微球(Borosilicate)被廣泛應用在介電基材的材料中。然而,硼矽酸鹽玻璃中空微球包含氧化鈉(Na 2O)、氧化硼(B 2O 3)及氧化鐵(Fe 2O 3)等多種金屬氧化物,會導致介電損耗上升、熱穩定性降低。此外,添加中空玻璃容易造成介電基材有較脆的機械特性。 Furthermore, hollow borosilicate glass microspheres are widely used in dielectric substrate materials. However, hollow borosilicate glass microspheres contain a variety of metal oxides such as sodium oxide (Na 2 O), boron oxide (B 2 O 3 ) and iron oxide (Fe 2 O 3 ), which will lead to increased dielectric loss and reduced thermal stability. In addition, the addition of hollow glass can easily cause the dielectric substrate to have brittle mechanical properties.

因此,現有技術中亦使用具有較佳耐熱性能、機械性能、電氣性能的中空二氧化矽填料。然而,中空二氧化矽填料與介電基材中的有機相分子相容性不佳。Therefore, the prior art also uses hollow silica fillers with better heat resistance, mechanical properties, and electrical properties. However, the hollow silica fillers have poor compatibility with the organic phase molecules in the dielectric matrix.

故,如何通過分子設計的改良,來提升中空二氧化矽填料相容性,來克服上述的缺陷,已成為該項事業所欲解決的重要課題之一。Therefore, how to improve the compatibility of hollow silica fillers through molecular design improvements to overcome the above-mentioned defects has become one of the important issues that the industry wants to solve.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種含有改質中空微球的樹脂組成物、預浸片及印刷電路板,以改善現有中空微球二氧化矽直接製成樹脂組成物存在添加後不相容、加工性等問題,並同時改善介電基材的電氣特性。The technical problem to be solved by the present invention is to provide a resin composition containing modified hollow microspheres, a prepreg sheet and a printed circuit board to address the shortcomings of the existing technology, so as to improve the problems of incompatibility and processability after adding the existing hollow microsphere silica directly into the resin composition, and at the same time improve the electrical properties of the dielectric substrate.

為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種含有改質中空微球的樹脂組成物,以樹脂組成物的總重為100重量份,其包括:10至80重量份的改質中空微球;5至60重量份的聚苯醚樹脂;以及5至30重量份的硬化劑。所述改質中空微球是由以下步驟所製得:(a)將中空球狀二氧化矽、矽氧烷偶合劑與乙醇溶液均勻混合並攪拌一第一預定時間;(b)加入鹼性溶液,並持續攪拌一第二預定時間;(c)離心並倒出乙醇澄清液,取出粉末;以及(d)將所述粉末在真空環境下乾燥,以取得所述改質中空微球。In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a resin composition containing modified hollow microspheres, which includes: 10 to 80 parts by weight of modified hollow microspheres; 5 to 60 parts by weight of polyphenylene ether resin; and 5 to 30 parts by weight of hardener, based on the total weight of the resin composition being 100 parts by weight. The modified hollow microspheres are prepared by the following steps: (a) uniformly mixing hollow spherical silica, a siloxane coupling agent and an ethanol solution and stirring for a first predetermined time; (b) adding an alkaline solution and continuously stirring for a second predetermined time; (c) centrifuging and pouring out the ethanol clarified liquid to take out the powder; and (d) drying the powder in a vacuum environment to obtain the modified hollow microspheres.

在本發明的一實施例中,所述樹脂組成物還進一步包括0.1至5重量份的觸媒。In one embodiment of the present invention, the resin composition further comprises 0.1 to 5 parts by weight of a catalyst.

在本發明的一實施例中,所述觸媒為過氧化物、偶氮化合物、氧化還原引發劑或疊氮化物。In one embodiment of the present invention, the catalyst is a peroxide, an azo compound, a redox initiator or an azide.

在本發明的一實施例中,所述硬化劑為三甲代烯丙基異氰酸酯(TMAIC)、三丙烯基異三聚氰酸酸酯(TAIC)、1,3-異丙烯基-α-甲基苯乙烯 / 1,4-異丙烯基-α-甲基苯乙烯(1,3-Isopropenyl-alpha-Methylstyrene / 1,4-Isopropenyl-alpha-Methylstyrene,IP-AMS)、2,2'-二烯丙基雙酚A (Di-ally BPA)、二乙烯基苯 (DVB)、1,2-雙(對-乙烯基苯基)乙烷(BVPE)。In one embodiment of the present invention, the hardener is trimethylallyl isocyanate (TMAIC), triallyl isocyanurate (TAIC), 1,3-isopropenyl-α-methylstyrene/1,4-isopropenyl-α-methylstyrene (1,3-Isopropenyl-alpha-Methylstyrene/1,4-Isopropenyl-alpha-Methylstyrene, IP-AMS), 2,2'-diallyl bisphenol A (Di-ally BPA), divinylbenzene (DVB), 1,2-bis(p-vinylphenyl)ethane (BVPE).

在本發明的一實施例中,所述中空二氧化矽與所述矽氧烷偶合劑的重量比為1:10至1:25。In one embodiment of the present invention, the weight ratio of the hollow silica to the siloxane coupling agent is 1:10 to 1:25.

在本發明的一實施例中,所述鹼性溶液為25%的氯化銨溶液。In one embodiment of the present invention, the alkaline solution is a 25% ammonium chloride solution.

在本發明的一實施例中,所述矽氧烷偶合劑為乙烯基三甲氧矽烷、乙烯基三乙氧矽烷、對苯乙烯基三甲氧基矽烷、3-甲基丙烯酸基丙基甲基二甲氧基矽烷、3-甲基丙烯酸基丙基三甲氧基矽烷、3-甲基丙烯酸基丙基甲基二乙氧基矽烷、3-甲基丙烯酸基丙基三乙氧基矽烷或3-丙烯酸丙基三甲氧基矽烷。In one embodiment of the present invention, the siloxane coupling agent is vinyl trimethoxysilane, vinyl triethoxysilane, p-phenylene trimethoxysilane, 3-methacrylate propyl methyl dimethoxy silane, 3-methacrylate propyl trimethoxy silane, 3-methacrylate propyl methyl diethoxy silane, 3-methacrylate propyl triethoxy silane or 3-acrylate propyl trimethoxy silane.

為了解決上述的技術問題,本發明所採用的另外一技術方案是提供一種預浸片,其是將一補強基材含浸於前述的含有改質中空微球的樹脂組成物中後形成。In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a prepreg sheet, which is formed by impregnating a reinforcing substrate into the aforementioned resin composition containing modified hollow microspheres.

為了解決上述的技術問題,本發明所採用的另外再一技術方案是提供一種印刷電路板,其包括一介電基材層及形成於所述介電基材層上的一導電金屬層,所述介電基材層是由前述的預浸片所形成。In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a printed circuit board, which includes a dielectric substrate layer and a conductive metal layer formed on the dielectric substrate layer, wherein the dielectric substrate layer is formed by the aforementioned prepreg sheet.

在本發明的一實施例中,所述介電基材層在10GHz下的介電常數小於2.9,且所述介電基材層在10GHz下的介電損耗小於0.003。In one embodiment of the present invention, the dielectric constant of the dielectric substrate layer at 10 GHz is less than 2.9, and the dielectric loss of the dielectric substrate layer at 10 GHz is less than 0.003.

本發明的其中一有益效果在於,本發明所提供的含有改質中空微球的樹脂組成物、預浸片及印刷電路板,其能通過“以樹脂組成物的總重為100重量份,包括10至80重量份的改質中空微球”以及“所述改質中空微球是由以下步驟所製得:(a)將中空球狀二氧化矽、矽氧烷偶合劑與乙醇溶液均勻混合並攪拌一第一預定時間;(b)加入鹼性溶液,並持續攪拌一第二預定時間;(c)離心並倒出乙醇澄清液,取出粉末;以及(d)將所述粉末在真空環境下乾燥,以取得所述改質中空微球”的技術方案,以改善現有樹脂組成物中的中空球狀二氧化矽直接添加後不相容、加工性等問題,同時改善介電層的電氣性。One of the beneficial effects of the present invention is that the resin composition, prepreg and printed circuit board containing modified hollow microspheres provided by the present invention can be prepared by "taking the total weight of the resin composition as 100 parts by weight, including 10 to 80 parts by weight of the modified hollow microspheres" and "the modified hollow microspheres are prepared by the following steps: (a) uniformly mixing hollow spherical silica, a siloxane coupling agent and an ethanol solution; (a) stirring for a first predetermined time; (b) adding an alkaline solution and continuing stirring for a second predetermined time; (c) centrifuging and pouring off the ethanol clarified liquid to take out the powder; and (d) drying the powder in a vacuum environment to obtain the "modified hollow microspheres" technical solution to improve the incompatibility and processability problems of hollow spherical silica in the existing resin composition after direct addition, and at the same time improve the electrical properties of the dielectric layer.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only used for reference and description and are not used to limit the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“含有改質中空微球的樹脂組成物、預浸片及印刷電路板”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。The following is an explanation of the implementation methods of the "resin composition containing modified hollow microspheres, prepreg and printed circuit board" disclosed in the present invention through specific concrete embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustrations and are not depicted according to actual dimensions. Please note in advance. The following implementation methods will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention.

應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者特徵,但這些元件或者特徵不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一特徵與另一特徵。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements or features, these elements or features should not be limited by these terms. These terms are mainly used to distinguish one element from another element, or one feature from another feature. In addition, the term "or" used herein may include any one or more combinations of the related listed items depending on the actual situation.

本發明的改質中空微球的製造方法,是先將中空球狀二氧化矽以矽烷偶合劑表面改質,相較於現有技術添加矽烷偶合劑使中空球狀二氧化矽與有機相分子架接,本發明的改質中空微球具有更佳的相容性與加工性。The manufacturing method of the modified hollow microspheres of the present invention is to first modify the surface of the hollow spherical silica with a silane coupling agent. Compared with the prior art of adding a silane coupling agent to bridge the hollow spherical silica with organic phase molecules, the modified hollow microspheres of the present invention have better compatibility and processability.

參閱圖1至圖3所示,本發明提供一種改質中空微球的製造方法,其至少包括下列幾個步驟,步驟S1:將中空球狀二氧化矽、矽氧烷偶合劑與乙醇溶液均勻混合並攪拌一第一預定時間;步驟S2:加入鹼性溶液,並持續攪拌一第二預定時間;步驟S3:離心並倒出乙醇澄清液,取出粉末;以及步驟S4將粉末在真空環境下乾燥,以取得所述改質中空微球。Referring to FIGS. 1 to 3 , the present invention provides a method for manufacturing modified hollow microspheres, which comprises at least the following steps: step S1: uniformly mixing hollow spherical silica, a siloxane coupling agent and an ethanol solution and stirring for a first predetermined time; step S2: adding an alkaline solution and continuously stirring for a second predetermined time; step S3: centrifuging and pouring out the ethanol clarified liquid to take out the powder; and step S4: drying the powder in a vacuum environment to obtain the modified hollow microspheres.

具體而言,步驟S1至步驟S3在室溫下進行,室溫指的是20至30 oC。步驟S2的鹼性溶液可為氯化銨溶液、碳酸氫鈉溶液或氫氧化鈉溶液以及鹼金族(IA)鹼性溶液,其pH值為10至12(例如10至12之間的任意正整數)。在本發明的一實施例中,第一預定時間為30至60分鐘,較佳為30至40分鐘(例如30至40之間的任意正整數)。第二預定時間為24至36小時,較佳為24至30小時(例如24至30之間的任意正整數)。 Specifically, step S1 to step S3 are performed at room temperature, which refers to 20 to 30 ° C. The alkaline solution of step S2 can be an ammonium chloride solution, a sodium bicarbonate solution or a sodium hydroxide solution and an alkali gold group (IA) alkaline solution, and its pH value is 10 to 12 (for example, any positive integer between 10 and 12). In one embodiment of the present invention, the first predetermined time is 30 to 60 minutes, preferably 30 to 40 minutes (for example, any positive integer between 30 and 40). The second predetermined time is 24 to 36 hours, preferably 24 to 30 hours (for example, any positive integer between 24 and 30).

如圖2所示,本發明是使用矽氧烷偶合劑改質中空球狀二氧化矽,圖2中的R1、R2及R3可為C1~C12烷基或其C1~C12之同分異構物。在本發明的一實施例中,矽氧烷偶合劑可以是乙烯基三甲氧矽烷(vinyltrimethoxysilane)、乙烯基三乙氧矽烷(vinyltriethoxysilane)、對苯乙烯基三甲氧基矽烷(p-styryltrimethoxysilane)、3-甲基丙烯酸基丙基甲基二甲氧基矽烷(3-methacryloxypropyl methyldimethoxysilane)、3-甲基丙烯酸基丙基三甲氧基矽烷(3-methacryloxypropyl trimethoxysilane)、3-甲基丙烯酸基丙基甲基二乙氧基矽烷(3-methacryloxypropyl methyldiethoxysilane)、3-甲基丙烯酸基丙基三乙氧基矽烷(3-methacryloxypropyl triethoxysilane)或3-丙烯酸丙基三甲氧基矽烷(3-acryloxypropyl trimethoxysilane)。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。As shown in FIG. 2 , the present invention uses a siloxane coupling agent to modify hollow spherical silica. In FIG. 2 , R1, R2, and R3 can be C1-C12 alkyl or its C1-C12 isomers. In one embodiment of the present invention, the siloxane coupling agent may be vinyltrimethoxysilane, vinyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropyl methyldimethoxysilane, 3-methacryloxypropyl trimethoxysilane, 3-methacryloxypropyl methyldiethoxysilane, 3-methacryloxypropyl triethoxysilane or 3-acryloxypropyl trimethoxysilane. However, the above example is only a feasible embodiment and is not intended to limit the present invention.

進一步地,中空二氧化矽與矽氧烷偶合劑的重量比為1:10至1:25,以獲得同時具有CH3-CH2、C-CH3、C=C及-OH官能基的改質中空二氧化矽。在本發明一較佳的實施例中,中空二氧化矽與矽氧烷偶合劑的重量比為1:10至1:20。舉例而言,中空二氧化矽與矽氧烷偶合劑的重量比可為1:11、1:12、1:13、1:14、1:15、1:16、1:17、1:18、1:19、1:20。在本發明一更佳的實施例中,中空二氧化矽與矽氧烷偶合劑的重量比為1:15。Further, the weight ratio of hollow silica to siloxane coupling agent is 1:10 to 1:25, so as to obtain modified hollow silica having CH3-CH2, C-CH3, C=C and -OH functional groups at the same time. In a preferred embodiment of the present invention, the weight ratio of hollow silica to siloxane coupling agent is 1:10 to 1:20. For example, the weight ratio of hollow silica to siloxane coupling agent can be 1:11, 1:12, 1:13, 1:14, 1:15, 1:16, 1:17, 1:18, 1:19, 1:20. In a more preferred embodiment of the present invention, the weight ratio of hollow silica to siloxane coupling agent is 1:15.

請參閱圖3所示,在改質前後中空二氧化矽都具有825、1110 cm -1的特徵峰,此為中空微球矽氧官能基(Si-O-Si)的特徵峰。改質後中空二氧化矽分別在1420、2972 cm -1處具有特徵峰,代表其架接CH3-CH2、C-CH3官能基。改質後中空二氧化矽在1620 cm -1處具有特徵峰,代表其架接乙烯基雙鍵(C=C)官能基。改質後中空二氧化矽在3503 cm -1處具有特徵峰,代表其架接氫氧官能基(-OH)。也就是說,本發明改質後中空二氧化矽同時具有CH3-CH2、C-CH3、C=C及-OH官能基。 Please refer to Figure 3. Before and after modification, the hollow silica has characteristic peaks at 825 and 1110 cm -1 , which are characteristic peaks of the hollow microsphere silane functional group (Si-O-Si). After modification, the hollow silica has characteristic peaks at 1420 and 2972 cm -1 , respectively, representing that it is connected to the CH3-CH2 and C-CH3 functional groups. After modification, the hollow silica has a characteristic peak at 1620 cm -1 , representing that it is connected to the vinyl double bond (C=C) functional group. After modification, the hollow silica has a characteristic peak at 3503 cm -1 , representing that it is connected to the hydrogen functional group (-OH). In other words, the hollow silica after modification of the present invention has CH3-CH2, C-CH3, C=C and -OH functional groups at the same time.

本發明改質中空微球的製造方法,詳見以下合成例1至10。The method for preparing the modified hollow microspheres of the present invention is described in the following Synthesis Examples 1 to 10.

[合成例1][Synthesis Example 1]

將1 g中空球狀二氧化矽、15 ml乙烯基三甲氧矽烷與100 ml乙醇置於裝設有溫度計、攪拌機的250 ml反應瓶中,在室溫下攪拌30分鐘。隨後,在持續攪拌下加入10 ml 25% NH 4OH鹼性溶液,於室溫下攪拌24小時。接著,使用離心機以2000rpm離心3次,倒除乙醇澄清液並取出粉末。將粉末置於真空環境12小時,再於100 oC下進行2小時乾燥步驟,即可獲得改質中空微球粉末(MS1-HS-SiO 2)。 Place 1 g of hollow spherical silica, 15 ml of vinyl trimethoxysilane and 100 ml of ethanol in a 250 ml reaction bottle equipped with a thermometer and a stirrer, and stir at room temperature for 30 minutes. Subsequently, add 10 ml of 25% NH 4 OH alkaline solution under continuous stirring, and stir at room temperature for 24 hours. Then, centrifuge at 2000 rpm for 3 times, remove the ethanol clarification liquid and take out the powder. Place the powder in a vacuum environment for 12 hours, and then perform a drying step at 100 o C for 2 hours to obtain the modified hollow microsphere powder (MS1-HS-SiO 2 ).

[合成例2][Synthesis Example 2]

同合成例1的製程條件,矽氧烷偶合劑改為乙烯基三乙氧矽烷,製得改質中空微球粉末(MS2-HS-SiO 2)。 The process conditions were the same as those of Synthesis Example 1, except that the siloxane coupling agent was changed to vinyl triethoxysilane to obtain a modified hollow microsphere powder (MS2-HS-SiO 2 ).

[合成例3][Synthesis Example 3]

同合成例1的製程條件,矽氧烷偶合劑改為對苯乙烯基三甲氧基矽烷,製得改質中空微球粉末(MS3-HS-SiO 2)。 The process conditions were the same as those in Synthesis Example 1, except that the siloxane coupling agent was changed to p-phenylethylenetrimethoxysilane to obtain a modified hollow microsphere powder (MS3-HS-SiO 2 ).

[合成例4][Synthesis Example 4]

同合成例1的製程條件,矽氧烷偶合劑改為3-甲基丙烯酸基丙基甲基二甲氧基矽烷,製得改質中空微球粉末(MS4-HS-SiO 2)。 The process conditions were the same as those in Synthesis Example 1, except that the siloxane coupling agent was changed to 3-methacrylatepropylmethyldimethoxysilane to obtain a modified hollow microsphere powder (MS4-HS-SiO 2 ).

[合成例5][Synthesis Example 5]

同合成例1的製程條件,矽氧烷偶合劑改為3-甲基丙烯酸基丙基三甲氧基矽烷,製得改質中空微球粉末(MS5-HS-SiO 2)。 The process conditions were the same as those of Synthesis Example 1, except that the siloxane coupling agent was changed to 3-methacrylatepropyltrimethoxysilane to obtain a modified hollow microsphere powder (MS5-HS-SiO 2 ).

[合成例6][Synthesis Example 6]

同合成例1的製程條件,矽氧烷偶合劑改為3-甲基丙烯酸基丙基甲基二乙氧基矽烷,製得改質中空微球粉末(MS6-HS-SiO 2)。 The process conditions were the same as those in Synthesis Example 1, except that the siloxane coupling agent was changed to 3-methacrylatepropylmethyldiethoxysilane to obtain a modified hollow microsphere powder (MS6-HS-SiO 2 ).

[合成例7][Synthesis Example 7]

同合成例1的製程條件,矽氧烷偶合劑改為3-甲基丙烯酸基丙基三乙氧基矽烷,製得改質中空微球粉末(MS7-HS-SiO 2)。 The process conditions were the same as those of Synthesis Example 1, except that the siloxane coupling agent was changed to 3-methacrylatepropyltriethoxysilane to obtain a modified hollow microsphere powder (MS7-HS-SiO 2 ).

[合成例8][Synthesis Example 8]

同合成例1的製程條件,矽氧烷偶合劑改為3-丙烯酸丙基三甲氧基矽烷,製得改質中空微球粉末(MS8-HS-SiO 2)。 The process conditions were the same as those in Synthesis Example 1, except that the siloxane coupling agent was changed to 3-acrylic propyltrimethoxysilane to obtain a modified hollow microsphere powder (MS8-HS-SiO 2 ).

[合成例9][Synthesis Example 9]

將1 g中空球狀二氧化矽、15 ml乙烯基三甲氧矽烷與100 ml乙醇置於裝設有溫度計、攪拌機的250 ml反應瓶中,在室溫下攪拌30分鐘。隨後,在持續攪拌下加入10 ml 1% HCL酸性溶液,於室溫下攪拌24小時。接著,使用離心機以2000rpm離心3次,倒除乙醇澄清液並取出粉末。將粉末置於真空環境12小時,再於100 oC下進行2小時乾燥步驟,即可獲得改質中空微球粉末(MS9-HS-SiO 2)。 Place 1 g of hollow spherical silica, 15 ml of vinyl trimethoxysilane and 100 ml of ethanol in a 250 ml reaction bottle equipped with a thermometer and a stirrer, and stir at room temperature for 30 minutes. Then, add 10 ml of 1% HCL acidic solution under continuous stirring, and stir at room temperature for 24 hours. Then, use a centrifuge to centrifuge 3 times at 2000 rpm, pour off the ethanol clarification liquid and take out the powder. Place the powder in a vacuum environment for 12 hours, and then perform a drying step at 100 o C for 2 hours to obtain the modified hollow microsphere powder (MS9-HS-SiO 2 ).

[合成例10][Synthesis Example 10]

同合成例9的製程條件,矽氧烷偶合劑改為3-丙烯酸丙基三甲氧基矽烷,製得改質中空微球粉末(MS10-HS-SiO 2)。 The process conditions were the same as those of Synthesis Example 9, except that the siloxane coupling agent was changed to 3-acrylic propyltrimethoxysilane to obtain a modified hollow microsphere powder (MS10-HS-SiO 2 ).

進一步地,本發明還提供一種含有改質中空微球的樹脂組成物,以樹脂組成物的總重為100重量份,其包括:10至80重量份的改質中空微球、5至60重量份的聚苯醚樹脂以及5至30重量份的硬化劑。若改質中空微球的含量低於10重量份,則無法有效降低介電常數與介電損耗,若改質中空微球的含量高於80重量份,則會影響樹脂組成物的塗佈特性。若聚苯醚樹脂的含量低於5重量份,則會導致樹脂組成物的物理機械性能、耐熱性和電氣絕緣性不佳,若聚苯醚樹脂的含量高於60重量份,則會導致樹脂組成物的熔融黏度大而不易加工。若硬化劑的含量低於5重量份,則會導致樹脂塗佈之後無法順利硬化,若硬化劑的含量高於30重量份,則會使樹脂組成物固化後的質地過於硬脆。Furthermore, the present invention also provides a resin composition containing modified hollow microspheres, which includes 10 to 80 parts by weight of modified hollow microspheres, 5 to 60 parts by weight of polyphenylene ether resin, and 5 to 30 parts by weight of a hardener, based on the total weight of the resin composition being 100 parts by weight. If the content of the modified hollow microspheres is less than 10 parts by weight, the dielectric constant and dielectric loss cannot be effectively reduced. If the content of the modified hollow microspheres is higher than 80 parts by weight, the coating properties of the resin composition will be affected. If the content of the polyphenylene ether resin is lower than 5 parts by weight, the physical and mechanical properties, heat resistance and electrical insulation of the resin composition will be poor. If the content of the polyphenylene ether resin is higher than 60 parts by weight, the melt viscosity of the resin composition will be high and difficult to process. If the content of the hardener is less than 5 parts by weight, the resin will not be able to harden smoothly after coating. If the content of the hardener is higher than 30 parts by weight, the texture of the resin composition after curing will be too hard and brittle.

在本發明一較佳的實施例中,改質中空微球的樹脂組成物包括30至70重量份的改質中空微球、10至50重量份的聚苯醚樹脂以及5至20重量份的硬化劑。在本發明一更佳的實施例中,改質中空微球的樹脂組成物包括50至70重量份的改質中空微球、20至30重量份的聚苯醚樹脂以及10至20重量份的硬化劑。在本發明又更佳的實施例中,改質中空微球、聚苯醚樹脂及硬化劑的重量比為65:24:11。In a preferred embodiment of the present invention, the resin composition of the modified hollow microspheres includes 30 to 70 parts by weight of the modified hollow microspheres, 10 to 50 parts by weight of the polyphenylene ether resin, and 5 to 20 parts by weight of the hardener. In a more preferred embodiment of the present invention, the resin composition of the modified hollow microspheres includes 50 to 70 parts by weight of the modified hollow microspheres, 20 to 30 parts by weight of the polyphenylene ether resin, and 10 to 20 parts by weight of the hardener. In a still more preferred embodiment of the present invention, the weight ratio of the modified hollow microspheres, the polyphenylene ether resin, and the hardener is 65:24:11.

詳細而言,硬化劑可為硬化劑可以是三甲代烯丙基異氰酸酯(TMAIC)、三丙烯基異三聚氰酸酸酯(TAIC)、1,3-異丙烯基-α-甲基苯乙烯 / 1,4-異丙烯基-α-甲基苯乙烯(1,3-Isopropenyl-alpha-Methylstyrene / 1,4-Isopropenyl-alpha-Methylstyrene,IP-AMS)、2,2'-二烯丙基雙酚A (Di-ally BPA)、二乙烯基苯 (DVB)、1,2-雙(對-乙烯基苯基)乙烷 (BVPE)。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。In detail, the hardener may be trimethylallyl isocyanate (TMAIC), triallyl isocyanurate (TAIC), 1,3-isopropenyl-alpha-methylstyrene/1,4-isopropenyl-alpha-methylstyrene (1,3-Isopropenyl-alpha-Methylstyrene/1,4-Isopropenyl-alpha-Methylstyrene, IP-AMS), 2,2'-diallyl bisphenol A (Di-ally BPA), divinylbenzene (DVB), 1,2-bis(p-vinylphenyl)ethane (BVPE). However, the above examples are only one possible embodiment and are not intended to limit the present invention.

將由本發明的方法所製得的改質中空微球粉末與樹脂、硬化劑、觸媒、補強材等混合製成樹脂組成物,即以均質攪拌機混合並溶解或分散於溶劑中而製成清漆狀,以供後續加工利用。舉例而言,觸媒可為過氧化物、偶氮化合物(諸如 α,α′-偶氮雙(異丁腈))、氧化還原引發劑(諸如過氧化物的組合,例如過氧化氫和亞鐵鹽的組合)或疊氮化物(諸如乙烯疊氮化物)。在本發明的一實施例中,觸媒可為過氧化物系硬化促進劑,如環己酮過氧化物、過氧化苯甲酸叔丁基酯、甲基乙基酮過氧化物、過氧化二異丙苯、叔丁基過氧化異丙苯、二叔丁基過氧化物、過氧化氫二異丙苯、氫過氧化異丙苯、叔丁基過氧化氫。較佳地,過氧化物系硬化促進劑是自Arkema商業購得的過氧化二異丙苯(DCP)。The modified hollow microsphere powder prepared by the method of the present invention is mixed with a resin, a hardener, a catalyst, a reinforcing material, etc. to form a resin composition, that is, mixed with a homogenizer and dissolved or dispersed in a solvent to form a varnish for subsequent processing. For example, the catalyst can be a peroxide, an azo compound (such as α,α′-azobis(isobutyronitrile)), a redox initiator (such as a combination of peroxides, such as a combination of hydrogen peroxide and a ferrous salt) or a nitride (such as ethylene nitride). In one embodiment of the present invention, the catalyst may be a peroxide-based hardening accelerator, such as cyclohexanone peroxide, tert-butyl peroxybenzoate, methyl ethyl ketone peroxide, diisopropylbenzene peroxide, tert-butyl cumyl peroxide, di-tert-butyl peroxide, diisopropylbenzene hydroperoxide, cumyl hydroperoxide, tert-butyl hydroperoxide. Preferably, the peroxide-based hardening accelerator is diisopropylbenzene peroxide (DCP) commercially available from Arkema.

所述溶劑可為任何可溶解或分散樹脂組合物各成分、但不與該等成分反應的惰性溶劑。前述溶劑包含但不限於:甲苯、γ-丁內酯、甲乙酮、環己酮、丁酮、丙酮、二甲苯、甲基異丁基酮、N,N-二甲基甲醯胺(N,N-dimethyl formamide,DMF)、N,N-二甲基乙醯胺(N,N-dimethyl acetamide,DMAc)、及N-甲基吡咯烷酮(N-methyl-pyrrolidone,NMP)。各溶劑可單獨使用或混合使用。溶劑之用量並無特殊限制,原則上只要能使樹脂組合物各組分均勻溶解或分散於其中即可。於後附實施例中,係使用甲苯、甲乙酮、及γ-丁內酯之混合物作為溶劑。The solvent can be any inert solvent that can dissolve or disperse the components of the resin composition but does not react with the components. The aforementioned solvents include but are not limited to: toluene, γ-butyrolactone, methyl ethyl ketone, cyclohexanone, butanone, acetone, xylene, methyl isobutyl ketone, N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), and N-methyl-pyrrolidone (NMP). Each solvent can be used alone or in combination. There is no special restriction on the amount of solvent used. In principle, as long as the components of the resin composition can be uniformly dissolved or dispersed therein, it can be used. In the following examples, a mixture of toluene, methyl ethyl ketone, and γ-butyrolactone is used as the solvent.

本發明還提供一種預浸漬片,係將基材含浸或塗佈改質中空微球的樹脂組成物,並乾燥該經含浸或塗佈之基材而製得。經含浸或塗佈之基材可在80°C至180°C之溫度下乾燥1至10分鐘(例如1至10之間的任意正整數),以獲得半固化態之預浸漬片。在本發明的一實施例中,使用2116強化玻璃纖維布作為基材(補強材),並在175°C下加熱乾燥2至15分鐘(例如2至15之間的任意正整數),以製得半固化狀態的預浸漬片。The present invention also provides a prepreg, which is prepared by impregnating or coating a substrate with a resin composition of modified hollow microspheres, and drying the impregnated or coated substrate. The impregnated or coated substrate can be dried at a temperature of 80°C to 180°C for 1 to 10 minutes (e.g., any positive integer between 1 and 10) to obtain a semi-cured prepreg. In one embodiment of the present invention, 2116 reinforced glass fiber cloth is used as a substrate (reinforcement material), and is heated and dried at 175°C for 2 to 15 minutes (e.g., any positive integer between 2 and 15) to obtain a semi-cured prepreg.

進一步地,可藉由上述之預浸漬片與金屬箔加以層合而製得金屬箔積層板及印刷電路板。在本發明的一實施例中,可分別將四片含浸或塗佈前述之樹脂組合物的預浸漬片層合,並在其二側的最外層各層合一張0.5盎司之銅箔,隨後置於熱壓機中進行高溫熱壓固化製得印刷電路板。具體而言,熱壓條件為:以3.0°C/分鐘之升溫速度升溫至200°C至220°C(例如200至220之間的任意正整數),並在該溫度下,以全壓15公斤/平方公分(初壓8公斤/平方公分)之壓力熱壓180分鐘。Furthermore, the above-mentioned prepregs and metal foils can be laminated to produce metal foil laminates and printed circuit boards. In one embodiment of the present invention, four prepregs impregnated or coated with the above-mentioned resin composition can be laminated, and a 0.5 ounce copper foil is laminated on the outermost layers of both sides, and then placed in a hot press for high-temperature hot pressing and curing to produce a printed circuit board. Specifically, the hot pressing conditions are: heating the temperature to 200°C to 220°C (e.g., any positive integer between 200 and 220) at a heating rate of 3.0°C/min, and hot pressing at the temperature for 180 minutes at a full pressure of 15 kg/cm2 (initial pressure of 8 kg/cm2).

接著,對介電基材層進行玻璃轉化溫度(glass transition temperature,Tg)、熱膨脹係數(coefficient of thermal expansion,CTE)、介電常數(Dk)、介電損耗(Df)及相容性的特性測試,樹脂組成物的成分與測試結果列於表1中。表1中EX1~EX8代表實施例1至8,C1~C12代表比較例1至12。Next, the dielectric substrate layer was subjected to glass transition temperature (Tg), coefficient of thermal expansion (CTE), dielectric constant (Dk), dielectric loss (Df) and compatibility property tests, and the components of the resin composition and the test results are listed in Table 1. In Table 1, EX1-EX8 represent Examples 1 to 8, and C1-C12 represent Comparative Examples 1 to 12.

[CTE測試][CTE test]

根據IPC-TM-650 2.4.24.5規範,使用熱機械分析儀(thermal mechanical analyzer,TMA)測量待測樣品在低於Tg之溫度下的熱膨脹係數(coefficient of thermal expansion,CTE)在Z軸方向上的熱膨脹係數改變率(總z-CTE)。According to IPC-TM-650 2.4.24.5, a thermal mechanical analyzer (TMA) is used to measure the coefficient of thermal expansion (CTE) change rate in the Z-axis direction (total z-CTE) of the sample at a temperature below Tg.

[相容性測試][Compatibility test]

以粉體填料於清漆(varnish)溶液中,於室溫下靜置2hr後觀察後,粉體懸浮與否;若有表面懸浮註記(X),反之均勻混合註記為(O)。Place the powder filler in a varnish solution and leave it at room temperature for 2 hours before observing whether the powder is suspended. If it is suspended on the surface, mark it with (X); otherwise, mark it with (O).

[介電常數、介電損耗測試][Dielectric constant, dielectric loss test]

從熱壓機中移除層合基板,並且通過蝕刻將銅箔移除形成試樣;使用IPC-TM-650 2.5.5.5.1中描述的夾持帶狀線測試法在10GHz處測試介電常數和損耗因子。The laminated substrate was removed from the hot press and the copper foil was removed by etching to form a test specimen; the dielectric constant and dissipation factor were tested at 10 GHz using the clamped stripline test method described in IPC-TM-650 2.5.5.5.1.

本案實施例的組成及物性測量結果如表1所示,比較例的組成及物性測量結果如表2所示,表1及表2中的含量以重量份表示。本案實施例的組成以所有組成物的總體積為100%,其中50%體積百分比為中空微球、25%體積百分比為補強材,25%體積百分比為樹脂、觸媒及阻燃劑。The composition and physical property measurement results of the embodiment of the present case are shown in Table 1, and the composition and physical property measurement results of the comparative example are shown in Table 2. The contents in Table 1 and Table 2 are expressed in parts by weight. The composition of the embodiment of the present case is based on the total volume of all components as 100%, of which 50% by volume is hollow microspheres, 25% by volume is reinforcing material, and 25% by volume is resin, catalyst and flame retardant.

表1   實施例 1 2 3 4 5 6 7 8 改質中空微球 MS1-HS-SiO 2 65               MS2-HS-SiO2   65             MS3-HS-SiO 2     65           MS4-HS-SiO 2       65         MS5-HS-SiO 2         65       MS6-HS-SiO 2           65     MS7-HS-SiO 2             65   MS8-HS-SiO 2               65 MS9-HS-SiO 2                 MS10-HS-SiO 2                 HS-SiO 2                   玻璃中空微球                   球形矽微粉                   silane 1                   silane 4                 樹脂 聚苯醚樹脂PPO 24 24 24 24 24 24 24 24 硬化劑 TMAIC 11 11 11 11 11 11 11 11   聚丁二烯 5 5 5 5 5 5 5 5   阻燃劑 5 5 5 5 5 5 5 5 觸媒 過氧化物(peroxide) 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 補強材 EG-Glass Cloth 15 15 15 15 15 15 15 15 量測物性 Tg(TMA)℃ 225 220 218 223 215 210 222 204   CTE(ppm/℃) 0.64 0.62 0.66 0.71 0.6 0.65 0.7 0.64 介電常數(10GHz) 2.84 2.81 2.8 2.79 2.85 2.81 2.8 2.87 介電損耗(10GHz) 0.003 0.0028 0.0027 0.0028 0.0026 0.0028 0.0025 0.0028 相容性 O O O O O O O O Table 1 Embodiment 1 2 3 4 5 6 7 8 Modified hollow microspheres MS1-HS- SiO2 65 MS2-HS-SiO2 65 MS3-HS- SiO2 65 MS4-HS- SiO2 65 MS5-HS- SiO2 65 MS6-HS- SiO2 65 MS7-HS- SiO2 65 MS8-HS- SiO2 65 MS9-HS- SiO2 MS10-HS- SiO2 HS-SiO 2 Glass hollow microspheres Spherical Silica Powder silane 1 silane 4 Resin Polyphenylene ether resin PPO twenty four twenty four twenty four twenty four twenty four twenty four twenty four twenty four Hardener TMAIC 11 11 11 11 11 11 11 11 Polybutadiene 5 5 5 5 5 5 5 5 Flame retardant 5 5 5 5 5 5 5 5 Catalyst Peroxide 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 Reinforcement material EG-Glass Cloth 15 15 15 15 15 15 15 15 Measuring physical properties Tg(TMA)℃ 225 220 218 223 215 210 222 204 CTE(ppm/℃) 0.64 0.62 0.66 0.71 0.6 0.65 0.7 0.64 Dielectric constant (10GHz) 2.84 2.81 2.8 2.79 2.85 2.81 2.8 2.87 Dielectric loss (10GHz) 0.003 0.0028 0.0027 0.0028 0.0026 0.0028 0.0025 0.0028 Compatibility O O O O O O O O

表2     C1 C2 C3 C4 C5 C6 MS1-HS-SiO 2             MS2-HS-SiO 2             MS3-HS-SiO 2             MS4-HS-SiO 2             MS5-HS-SiO 2             MS6-HS-SiO 2             MS7-HS-SiO 2             MS8-HS-SiO 2             MS9-HS-SiO 2 65           MS10-HS-SiO 2   65         HS-SiO 2     65 65 65     玻璃中空微球           65   球形矽微粉               silane 1       5       silane 4         5   樹脂 聚苯醚樹脂PPO 24 24 24 24 24 24 硬化劑 TMAIC 11 11 11 11 11 11   聚丁二烯 5 5 5 5 5 5   阻燃劑 5 5 5 5 5 5 觸媒 過氧化物(peroxide) 0.75 0.75 0.75 0.75 0.75 0.75 補強材 EG-Glass Cloth 15 15 15 15 15 15 量測物性 Tg(TMA)℃ 224 205 216 220 209 217   CTE(ppm/℃) 0.63 0.65 0.63 0.64 0.71 0.59 介電常數(10GHz) 3 3.1 2.88 2.86 2.86 2.85 介電損耗(10GHz) 0.09 0.01 0.003 0.0033 0.0032 0.003 相容性 O O X X X X Table 2 C1 C2 C3 C4 C5 C6 MS1-HS- SiO2 MS2-HS- SiO2 MS3-HS- SiO2 MS4-HS- SiO2 MS5-HS- SiO2 MS6-HS- SiO2 MS7-HS- SiO2 MS8-HS- SiO2 MS9-HS- SiO2 65 MS10-HS- SiO2 65 HS-SiO 2 65 65 65 Glass hollow microspheres 65 Spherical Silica Powder silane 1 5 silane 4 5 Resin Polyphenylene ether resin PPO twenty four twenty four twenty four twenty four twenty four twenty four Hardener TMAIC 11 11 11 11 11 11 Polybutadiene 5 5 5 5 5 5 Flame retardant 5 5 5 5 5 5 Catalyst Peroxide 0.75 0.75 0.75 0.75 0.75 0.75 Reinforcement EG-Glass Cloth 15 15 15 15 15 15 Measuring physical properties Tg(TMA)℃ 224 205 216 220 209 217 CTE(ppm/℃) 0.63 0.65 0.63 0.64 0.71 0.59 Dielectric constant (10GHz) 3 3.1 2.88 2.86 2.86 2.85 Dielectric loss (10GHz) 0.09 0.01 0.003 0.0033 0.0032 0.003 Compatibility O O X X X X

表2(續)     C7 C8 C9 C10 C11 C12 MS1-HS-SiO 2             MS2-HS-SiO 2             MS3-HS-SiO 2             MS4-HS-SiO 2             MS5-HS-SiO 2             MS6-HS-SiO 2             MS7-HS-SiO 2             MS8-HS-SiO 2             MS9-HS-SiO 2             MS10-HS-SiO 2             HS-SiO 2               玻璃中空微球   30   30   30   球形矽微粉 65   30   30     silane 1               silane 4             樹脂 聚苯醚樹脂PPO 24 24 24 24 24 24 硬化劑 TMAIC 11 11 11 11 11 11   聚丁二烯 5 5 5 5 5 5   阻燃劑 5 5 5 5 5 5 觸媒 過氧化物(peroxide) 0.75 0.75 0.75 0.75 0.75 0.75 補強材 EG-Glass Cloth (25%體積百分比) 15 15 15 15 15 15 量測物性 Tg(TMA)℃ 228 216 210 213 217 200   CTE(ppm/℃) 0.6 0.64 0.64 0.62 0.6 0.61 介電常數(10GHz) 3.3 2.9 3.15 2.8 3.12 2.8 介電損耗(10GHz) 0.004 0.003 0.0035 0.003 0.0034 0.003 相容性 O X X X X X Table 2 (continued) C7 C8 C9 C10 C11 C12 MS1-HS- SiO2 MS2-HS- SiO2 MS3-HS- SiO2 MS4-HS- SiO2 MS5-HS- SiO2 MS6-HS- SiO2 MS7-HS- SiO2 MS8-HS- SiO2 MS9-HS- SiO2 MS10-HS- SiO2 HS-SiO 2 Glass hollow microspheres 30 30 30 Spherical Silica Powder 65 30 30 silane 1 silane 4 Resin Polyphenylene ether resin PPO twenty four twenty four twenty four twenty four twenty four twenty four Hardener TMAIC 11 11 11 11 11 11 Polybutadiene 5 5 5 5 5 5 Flame retardant 5 5 5 5 5 5 Catalyst Peroxide 0.75 0.75 0.75 0.75 0.75 0.75 Reinforcement material EG-Glass Cloth (25% volume percentage) 15 15 15 15 15 15 Measuring physical properties Tg(TMA)℃ 228 216 210 213 217 200 CTE(ppm/℃) 0.6 0.64 0.64 0.62 0.6 0.61 Dielectric constant (10GHz) 3.3 2.9 3.15 2.8 3.12 2.8 Dielectric loss (10GHz) 0.004 0.003 0.0035 0.003 0.0034 0.003 Compatibility O X X X X X

在表1及表2中,silane 1為乙烯基三甲氧矽烷(vinyltrimethoxysilane);silane 4為3-甲基丙烯酸基丙基甲基二甲氧基矽烷(3-Methacryloxypropyl methyldimethoxysilane)。過氧化物為Arkema商業購得的過氧化二異丙苯(DCP)。In Table 1 and Table 2, silane 1 is vinyltrimethoxysilane; silane 4 is 3-methacryloxypropyl methyldimethoxysilane. The peroxide is diisopropyl peroxide (DCP) commercially available from Arkema.

如表1所示,本發明的改質中空微球與介電基材的其他材料具有優異的相容性,且使用本發明的改質中空微球可使介電基材在10GHz下的介電常數小於2.9,且所述介電基材層在10GHz下的介電損耗小於0.003。As shown in Table 1, the modified hollow microspheres of the present invention have excellent compatibility with other materials of the dielectric substrate, and the use of the modified hollow microspheres of the present invention can make the dielectric constant of the dielectric substrate at 10 GHz less than 2.9, and the dielectric loss of the dielectric substrate layer at 10 GHz less than 0.003.

本發明的改質中空微球是在鹼性環境下製造,以得到較低的介電常數與介電損耗。如比較例C1與C2,雖然使用的矽氧烷偶合劑與本案的實施例相同,但是比較例C1與C2的改質中空微球是在酸性(pH3~5.5)環境下進行改質,導致所獲得的改質中空微球電氣特性較差。The modified hollow microspheres of the present invention are manufactured in an alkaline environment to obtain a lower dielectric constant and dielectric loss. For example, in Comparative Examples C1 and C2, although the siloxane coupling agent used is the same as that of the embodiment of the present invention, the modified hollow microspheres of Comparative Examples C1 and C2 are modified in an acidic environment (pH 3-5.5), resulting in poor electrical properties of the modified hollow microspheres.

此外,比較例C3至C5採用未經改質的中空微球,雖然亦有較低的介電常數與介電損耗,但是相容性不佳。比較例C6及C7採用玻璃中空微球與球形二氧化矽,分別具有不良的相容性與較差的電性特性。In addition, although the unmodified hollow microspheres used in Comparative Examples C3 to C5 also have lower dielectric constants and dielectric losses, their compatibility is poor. Comparative Examples C6 and C7 use glass hollow microspheres and spherical silica, which have poor compatibility and poor electrical properties, respectively.

另外,比較例C8至C12表現出即使將玻璃中空微球或球形二氧化矽與本發明的改質中空微球混合使用,依然會有不良的相容性與較差的電性特性等缺點。因此,本發明的改質中空微球需要在特定的用量下才能達到兼顧相容性與電氣特性的功效。In addition, Comparative Examples C8 to C12 show that even if glass hollow microspheres or spherical silica are mixed with the modified hollow microspheres of the present invention, there are still disadvantages such as poor compatibility and poor electrical properties. Therefore, the modified hollow microspheres of the present invention need to be used in a specific amount to achieve the effect of taking into account both compatibility and electrical properties.

[實施例的有益效果][Beneficial Effects of Embodiments]

本發明的其中一有益效果在於,本發明所提供的含有改質中空微球的樹脂組成物、預浸片及印刷電路板,其能通過“以樹脂組成物的總重為100重量份,包括10至80重量份的改質中空微球”以及“所述改質中空微球是由以下步驟所製得:(a)將中空球狀二氧化矽、矽氧烷偶合劑與乙醇溶液均勻混合並攪拌一第一預定時間;(b)加入鹼性溶液,並持續攪拌一第二預定時間;(c)離心並倒出乙醇澄清液,取出粉末;以及(d)將所述粉末在真空環境下乾燥,以取得所述改質中空微球”的技術方案,以改善現有樹脂組成物中的中空球狀二氧化矽直接添加後不相容、加工性等問題,同時改善介電層的電氣性。One of the beneficial effects of the present invention is that the resin composition, prepreg and printed circuit board containing modified hollow microspheres provided by the present invention can be prepared by "taking the total weight of the resin composition as 100 parts by weight, including 10 to 80 parts by weight of the modified hollow microspheres" and "the modified hollow microspheres are prepared by the following steps: (a) uniformly mixing hollow spherical silica, a siloxane coupling agent and an ethanol solution; (a) stirring for a first predetermined time; (b) adding an alkaline solution and continuing stirring for a second predetermined time; (c) centrifuging and pouring off the ethanol clarified liquid to take out the powder; and (d) drying the powder in a vacuum environment to obtain the "modified hollow microspheres" technical solution to improve the incompatibility and processability problems of hollow spherical silica in the existing resin composition after direct addition, and at the same time improve the electrical properties of the dielectric layer.

更進一步來說,由本發明的方法所提供的含有改質中空微球的樹脂組成物,其具有低介電特性與優異機械性質。因而在電子、航空航太等領域具有廣泛的應用範圍,特別適用於製造預浸片及印刷電路板。Furthermore, the resin composition containing modified hollow microspheres provided by the method of the present invention has low dielectric properties and excellent mechanical properties. Therefore, it has a wide range of applications in the fields of electronics, aerospace, etc., and is particularly suitable for the manufacture of prepregs and printed circuit boards.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。The contents disclosed above are only preferred feasible embodiments of the present invention and are not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the specification and drawings of the present invention are included in the scope of the patent application of the present invention.

S1~S4:步驟。S1~S4: steps.

圖1為本發明改質中空微球的製造方法之流程圖。FIG1 is a flow chart of the method for manufacturing modified hollow microspheres of the present invention.

圖2為本發明改質中空微球的製造方法之示意圖。FIG. 2 is a schematic diagram of the manufacturing method of the modified hollow microspheres of the present invention.

圖3為比較中空微球在改質前後的傅立葉轉換紅外線光譜圖。Figure 3 compares the Fourier transform infrared spectra of hollow microspheres before and after modification.

S1~S4:步驟 S1~S4: Steps

Claims (10)

一種含有改質中空微球的樹脂組成物,以樹脂組成物的總重為100重量份,其包括: 10至80重量份的改質中空微球,其中,所述改質中空微球包含一官能基,所述官能基係選自於由CH3-CH2、C-CH3、C=C、-OH及其組合所組成的群組; 5至60重量份的聚苯醚樹脂;以及 5至30重量份的硬化劑; 其中,所述改質中空微球是由以下步驟所製得: (a)將中空球狀二氧化矽、矽氧烷偶合劑與乙醇溶液均勻混合並攪拌一第一預定時間; (b)加入鹼性溶液,並持續攪拌一第二預定時間; (c)離心並倒出乙醇澄清液,取出粉末;以及 (d)將所述粉末在真空環境下乾燥,以取得所述改質中空微球。 A resin composition containing modified hollow microspheres, with the total weight of the resin composition being 100 parts by weight, comprises: 10 to 80 parts by weight of modified hollow microspheres, wherein the modified hollow microspheres contain a functional group selected from the group consisting of CH3-CH2, C-CH3, C=C, -OH and combinations thereof; 5 to 60 parts by weight of polyphenylene ether resin; and 5 to 30 parts by weight of a hardener; wherein the modified hollow microspheres are prepared by the following steps: (a) uniformly mixing hollow spherical silica, a siloxane coupling agent and an ethanol solution and stirring for a first predetermined time; (b) adding an alkaline solution and continuing stirring for a second predetermined time; (c) centrifuging and pouring off the ethanol clarified liquid to take out the powder; and (d) drying the powder in a vacuum environment to obtain the modified hollow microspheres. 如請求項1所述的含有改質中空微球的樹脂組成物,其中,所述樹脂組成物還進一步包括0.1至5重量份的觸媒。The resin composition containing modified hollow microspheres as described in claim 1, wherein the resin composition further comprises 0.1 to 5 parts by weight of a catalyst. 如請求項2所述的含有改質中空微球的樹脂組成物,其中,所述觸媒為過氧化物、偶氮化合物、氧化還原引發劑或疊氮化物。A resin composition containing modified hollow microspheres as described in claim 2, wherein the catalyst is a peroxide, an azo compound, a redox initiator or an azide. 如請求項1所述的含有改質中空微球的樹脂組成物,其中,所述硬化劑為三甲代烯丙基異氰酸酯(TMAIC)、三丙烯基異三聚氰酸酸酯(TAIC)、1,3-異丙烯基-α-甲基苯乙烯 / 1,4-異丙烯基-α-甲基苯乙烯(1,3-Isopropenyl-alpha-Methylstyrene / 1,4-Isopropenyl-alpha-Methylstyrene,IP-AMS)、2,2'-二烯丙基雙酚A (Di-ally BPA)、二乙烯基苯(DVB)、1,2-雙(對-乙烯基苯基)乙烷 (BVPE)。The resin composition containing modified hollow microspheres as described in claim 1, wherein the hardener is trimethylallyl isocyanate (TMAIC), triallyl isocyanurate (TAIC), 1,3-isopropenyl-α-methylstyrene/1,4-isopropenyl-α-methylstyrene (1,3-Isopropenyl-alpha-Methylstyrene/1,4-Isopropenyl-alpha-Methylstyrene, IP-AMS), 2,2'-diallylbisphenol A (Di-ally BPA), divinylbenzene (DVB), 1,2-bis(p-vinylphenyl)ethane (BVPE). 如請求項1所述的含有改質中空微球的樹脂組成物,其中,所述中空二氧化矽與所述矽氧烷偶合劑的重量比為1:10至1:25。The resin composition containing modified hollow microspheres as described in claim 1, wherein the weight ratio of the hollow silica to the siloxane coupling agent is 1:10 to 1:25. 如請求項1所述的含有改質中空微球的樹脂組成物,其中,所述鹼性溶液為25%的氯化銨溶液。The resin composition containing modified hollow microspheres as described in claim 1, wherein the alkaline solution is a 25% ammonium chloride solution. 如請求項1所述的含有改質中空微球的樹脂組成物,其中,所述矽氧烷偶合劑為乙烯基三甲氧矽烷、乙烯基三乙氧矽烷、對苯乙烯基三甲氧基矽烷、3-甲基丙烯酸基丙基甲基二甲氧基矽烷、3-甲基丙烯酸基丙基三甲氧基矽烷、3-甲基丙烯酸基丙基甲基二乙氧基矽烷、3-甲基丙烯酸基丙基三乙氧基矽烷或3-丙烯酸丙基三甲氧基矽烷。The resin composition containing modified hollow microspheres as described in claim 1, wherein the siloxane coupling agent is vinyl trimethoxysilane, vinyl triethoxysilane, p-phenylene trimethoxysilane, 3-methacrylate propyl methyl dimethoxy silane, 3-methacrylate propyl trimethoxy silane, 3-methacrylate propyl methyl diethoxy silane, 3-methacrylate propyl triethoxy silane or 3-acrylate propyl trimethoxy silane. 一種預浸片,其是將一補強基材含浸於如請求項1至7中任一項所述的含有改質中空微球的樹脂組成物中後形成。A prepreg sheet is formed by impregnating a reinforcing base material into a resin composition containing modified hollow microspheres as described in any one of claims 1 to 7. 一種印刷電路板,其包括一介電基材層及形成於所述介電基材層上的一導電金屬層,所述介電基材層是由如請求項8所述的預浸片所形成。A printed circuit board comprises a dielectric substrate layer and a conductive metal layer formed on the dielectric substrate layer, wherein the dielectric substrate layer is formed by the prepreg sheet as described in claim 8. 如請求項9所述的印刷電路板,其中,所述介電基材層在10GHz下的介電常數小於2.9,且所述介電基材層在10GHz下的介電損耗小於0.003。A printed circuit board as described in claim 9, wherein the dielectric constant of the dielectric substrate layer at 10 GHz is less than 2.9, and the dielectric loss of the dielectric substrate layer at 10 GHz is less than 0.003.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100494280C (en) * 2007-08-03 2009-06-03 东南大学 Preparation method of polyimide/silica hollow microsphere composite film
CN101815563A (en) * 2007-07-18 2010-08-25 新加坡南洋理工大学 Hollow porous microspheres
US9233244B2 (en) * 2013-06-29 2016-01-12 Thync, Inc. Transdermal electrical stimulation devices for modifying or inducing cognitive state
CN116410583A (en) * 2021-12-29 2023-07-11 广东生益科技股份有限公司 A kind of resin composition and its application

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101815563A (en) * 2007-07-18 2010-08-25 新加坡南洋理工大学 Hollow porous microspheres
CN100494280C (en) * 2007-08-03 2009-06-03 东南大学 Preparation method of polyimide/silica hollow microsphere composite film
US9233244B2 (en) * 2013-06-29 2016-01-12 Thync, Inc. Transdermal electrical stimulation devices for modifying or inducing cognitive state
CN116410583A (en) * 2021-12-29 2023-07-11 广东生益科技股份有限公司 A kind of resin composition and its application

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