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TWI872763B - Method for manufacturing a wire-grid polarizer - Google Patents

Method for manufacturing a wire-grid polarizer Download PDF

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TWI872763B
TWI872763B TW112141520A TW112141520A TWI872763B TW I872763 B TWI872763 B TW I872763B TW 112141520 A TW112141520 A TW 112141520A TW 112141520 A TW112141520 A TW 112141520A TW I872763 B TWI872763 B TW I872763B
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metal
layer
metal wire
manufacturing
polarizer
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TW112141520A
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TW202518072A (en
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黃玟焜
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安可光電股份有限公司
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Abstract

A method for manufacturing a wire-grid polarizer, comprising forming a thin metal layer on a transparent substrate, followed by the electroforming process to form a plurality of metal wires on the thin metal layer, and finally performing a chemical reaction to convert the thin metal layer exposed between the plurality of metal wires into a transparent dielectric layer to form the metal wire polarizer.

Description

金屬線偏光片的製作方法Method for manufacturing metal wire polarizer

本發明是有關一種金屬線偏光片(Wire-grid Polarizer; WGP),特別是關於一種低成本且具有良好穿透率(Transmittance)與消光比(Extinction Ratio)的金屬線偏光片的製作方法。The present invention relates to a wire-grid polarizer (WGP), and more particularly to a method for manufacturing a low-cost wire-grid polarizer with good transmittance and extinction ratio.

圖1顯示傳統的金屬線偏光片10,用以說明金屬線偏光片10之運作原理。圖2顯示圖1的金屬線偏光片10的剖面圖。金屬線偏光片10包括一透明基板12及多條金屬線14。多條金屬線14是平行排列在透明基板12上,以形成一金屬線柵。假設入射光Li為非偏極光(Un-polarized Light),入射光Li包含了P偏極光Ip及S偏極光Is,其中P偏極光Ip與S偏極光Is的強度相等。P偏極光Ip的電場垂直於多條金屬線14,而S偏極光Is的電場平行於多條金屬線14。當入射光Li照射至金屬線偏光片10時,S偏極光Is會與多條金屬線14交互作用而形成電偶極(electric dipole),使得大部分的S偏極光Is被金屬線偏光片10反射,成為反射光Lr的S偏極光Rs,只有小部的S偏極光Is穿過金屬線偏光片10,成為穿透光Lt的S偏極光Ts。由於P偏極光Ip的電場垂直於多條金屬線14,因此不會和多條金屬線14交互作用而產生電偶極,P偏極光Ip幾乎完全穿過金屬線偏光片10,即入射光Li的P偏極光Ip幾乎等於穿透光Lt的P偏極光Tp。FIG1 shows a conventional metal wire polarizer 10 to illustrate the operating principle of the metal wire polarizer 10. FIG2 shows a cross-sectional view of the metal wire polarizer 10 of FIG1. The metal wire polarizer 10 includes a transparent substrate 12 and a plurality of metal wires 14. The plurality of metal wires 14 are arranged in parallel on the transparent substrate 12 to form a metal wire grid. Assuming that the incident light Li is unpolarized light, the incident light Li includes P polarized light Ip and S polarized light Is, wherein the intensities of the P polarized light Ip and the S polarized light Is are equal. The electric field of the P polarized light Ip is perpendicular to the plurality of metal wires 14, while the electric field of the S polarized light Is is parallel to the plurality of metal wires 14. When the incident light Li irradiates the metal wire polarizer 10, the S polarized light Is interacts with the plurality of metal wires 14 to form an electric dipole, so that most of the S polarized light Is is reflected by the metal wire polarizer 10 and becomes the S polarized light Rs of the reflected light Lr, and only a small part of the S polarized light Is passes through the metal wire polarizer 10 and becomes the S polarized light Ts of the transmitted light Lt. Since the electric field of the P polarized light Ip is perpendicular to the plurality of metal wires 14, it does not interact with the plurality of metal wires 14 to generate an electric dipole, and the P polarized light Ip almost completely passes through the metal wire polarizer 10, that is, the P polarized light Ip of the incident light Li is almost equal to the P polarized light Tp of the transmitted light Lt.

金屬線偏光片10的好壞可以透過金屬線偏光片10的穿透率Tr及消光比Er來判斷,其中 Tr=Tp/Ip,而Er=Tp/Ts。穿透率Tr及消光比Er越大,代表金屬線偏光片10的功效越好。一般而言,金屬線14的線寬W越小且高度H越高,則穿透率Tr及消光比Er越大。The quality of the metal wire polarizer 10 can be judged by the transmittance Tr and extinction ratio Er of the metal wire polarizer 10, where Tr=Tp/Ip and Er=Tp/Ts. The greater the transmittance Tr and extinction ratio Er, the better the effect of the metal wire polarizer 10. Generally speaking, the smaller the line width W of the metal wire 14 and the higher the height H, the greater the transmittance Tr and extinction ratio Er.

為得到良好的穿透率Tr與消光比Er,金屬線偏光片10是採用奈米壓印微影與乾蝕刻等製程技術進行製作。然而,奈米級之微影與乾蝕刻之生產成本偏高,造成金屬線偏光片10之單價過高,而難以推廣金屬線偏光片10之應用範圍與拓展其應用市場之規模。In order to obtain good transmittance Tr and extinction ratio Er, the metal wire polarizer 10 is manufactured using process technologies such as nano-imprint lithography and dry etching. However, the production cost of nano-scale lithography and dry etching is relatively high, resulting in the unit price of the metal wire polarizer 10 being too high, making it difficult to promote the application scope of the metal wire polarizer 10 and expand the scale of its application market.

圖3顯示使用電鑄製程製作的金屬線偏光片20的剖面圖。圖3的金屬線偏光片20包括一透明基板22、一透明導電層24及多條金屬線26。由於金屬線26無法直接電鑄在透明基板22上,因此必須先在透明基板22上覆蓋一層透明導電層24,接著再透過電鑄方式於透明導電層24上形成多條金屬線26。多條金屬線26是平行排列在透明導電層24上,以形成一金屬線柵。電鑄製程的成本較低,約為奈米壓印微影與乾蝕刻等製程的1/10左右。為了有良好的電鑄特性,需增加透明導電層24的厚度來降低透明導電層24的阻值,進而提升電鑄速率與改善電鑄的均勻性問題。然而,透明導電層24具有光學吸收率及導電性,因此隨著透明導電層24的厚度的增加,金屬線偏光片20的穿透率Tr與消光比Er會降低。FIG3 shows a cross-sectional view of a metal wire polarizer 20 made using an electrocasting process. The metal wire polarizer 20 of FIG3 includes a transparent substrate 22, a transparent conductive layer 24, and a plurality of metal wires 26. Since the metal wires 26 cannot be directly electrocasted on the transparent substrate 22, a transparent conductive layer 24 must be first covered on the transparent substrate 22, and then a plurality of metal wires 26 are formed on the transparent conductive layer 24 by electrocasting. The plurality of metal wires 26 are arranged in parallel on the transparent conductive layer 24 to form a metal wire grid. The cost of the electrocasting process is relatively low, about 1/10 of the process such as nanoimprint lithography and dry etching. In order to have good electrocasting properties, the thickness of the transparent conductive layer 24 needs to be increased to reduce the resistance of the transparent conductive layer 24, thereby increasing the electrocasting rate and improving the uniformity of the electrocasting. However, the transparent conductive layer 24 has optical absorption rate and conductivity, so as the thickness of the transparent conductive layer 24 increases, the transmittance Tr and extinction ratio Er of the metal linear polarizer 20 will decrease.

因此,一種低成本且具有良好穿透率與消光比的金屬線偏光片的製作方法,乃為所冀。Therefore, a method for manufacturing a metal wire polarizer with low cost and good transmittance and extinction ratio is desired.

本發明的目的,在於提出一種低成本且具有良好穿透率與消光比的金屬線偏光片的製作方法。The purpose of the present invention is to provide a method for manufacturing a metal wire polarizer with low cost and good transmittance and extinction ratio.

根據本發明,一種金屬線偏光片的製作方法,包括在一透明基板上形成一薄金屬層,接著利用電鑄製程在該薄金屬層上形成多條金屬線,最後進行化學反應以將該薄金屬層暴露在該多條金線之間的部分轉換為透明的介電層,以形成該金屬線偏光片。本發明的金屬線是利用電鑄製程來形成,因此本發明的金屬線偏光片的成本較低,而且多條金屬線之間的薄金屬層會通過化學反應而轉換為透明的介電層,所以本發明的金屬線偏光片具有良好穿透率與消光比。According to the present invention, a method for manufacturing a metal wire polarizer includes forming a thin metal layer on a transparent substrate, then forming a plurality of metal wires on the thin metal layer by an electrocasting process, and finally performing a chemical reaction to convert the portion of the thin metal layer exposed between the plurality of metal wires into a transparent dielectric layer to form the metal wire polarizer. The metal wire of the present invention is formed by an electrocasting process, so the cost of the metal wire polarizer of the present invention is relatively low, and the thin metal layer between the plurality of metal wires is converted into a transparent dielectric layer by a chemical reaction, so the metal wire polarizer of the present invention has good transmittance and extinction ratio.

圖4是本發明金屬線偏光片的製作方法的第一實施例。圖5至圖10是用以說明圖4的製作方法。如圖4步驟S10及圖5所示,本發明金屬線偏光片30的製作方法包括在一透明基板32上形成一薄金屬層34,其中薄金屬層34的材質可以是但不限於鋁、鎳、銅或鐵。薄金屬層34的功用之一是為了在接下來的步驟S12中,可以通過電鑄製程來形成金屬線。Figure 4 is a first embodiment of the method for manufacturing a metal linear polarizer of the present invention. FIGS. 5 to 10 are used to illustrate the manufacturing method of FIG. 4 . As shown in step S10 of FIG. 4 and FIG. 5 , the manufacturing method of the metal linear polarizer 30 of the present invention includes forming a thin metal layer 34 on a transparent substrate 32 , where the material of the thin metal layer 34 can be but is not limited to aluminum, nickel, copper or iron. One of the functions of the thin metal layer 34 is to form metal lines through an electroforming process in the following step S12.

在形成薄金屬層34後,接著進行步驟S12。在步驟S12中,先於薄金屬層34上形成一光阻圖案40,如圖6所示。光阻圖案40可以是硬質光阻或軟質光阻。光阻圖案40可以但不限於使用壓印膠來形成。形成光阻圖案40後,接著利用電鑄製程在薄金屬層34未被光阻圖案40覆蓋的區域上形成多條平行排列的金屬線36,如圖7所示。薄金屬層34與金屬線36的材質可以相同或不同。在形成多條金屬線36後,將光阻圖案40移除,如圖8所示。在圖8中,金屬線36的剖面形狀為矩形,但本發明不限於此,金屬線36的形狀可以是各種規則或非規則形狀,例如金屬線36的剖面形狀也可以是上寬下窄或上窄下寬的梯形。After the thin metal layer 34 is formed, step S12 is then performed. In step S12, a photoresist pattern 40 is first formed on the thin metal layer 34, as shown in FIG6 . The photoresist pattern 40 can be a hard photoresist or a soft photoresist. The photoresist pattern 40 can be formed using, but is not limited to, an embossing adhesive. After the photoresist pattern 40 is formed, a plurality of parallel metal wires 36 are then formed on the area of the thin metal layer 34 not covered by the photoresist pattern 40 using an electroplating process, as shown in FIG7 . The materials of the thin metal layer 34 and the metal wires 36 can be the same or different. After the plurality of metal wires 36 are formed, the photoresist pattern 40 is removed, as shown in FIG8 . In FIG. 8 , the cross-sectional shape of the metal wire 36 is a rectangle, but the present invention is not limited thereto. The shape of the metal wire 36 may be various regular or irregular shapes, for example, the cross-sectional shape of the metal wire 36 may be a trapezoid that is wide at the top and narrow at the bottom or narrow at the top and wide at the bottom.

在形成多條金屬線36並移除光阻圖案後,進行步驟S14。步驟S14是對薄金屬層34暴露在多條金屬線36之間的部分進行化學反應,以將該部分轉換成為透明的介電層38,使得入射光線可以穿過。步驟S14的化學反應包括但不限於氧化、氮化、氟化或硫化。在步驟S14的化學反應後,薄金屬層34與金屬線36組成金屬線柵,以形成本發明的金屬線偏光片30。After forming a plurality of metal lines 36 and removing the photoresist pattern, step S14 is performed. Step S14 is to chemically react the portion of the thin metal layer 34 exposed between the plurality of metal lines 36 to convert the portion into a transparent dielectric layer 38, so that incident light can pass through. The chemical reaction of step S14 includes but is not limited to oxidation, nitridation, fluorination or sulfidation. After the chemical reaction of step S14, the thin metal layer 34 and the metal lines 36 form a metal wire grid to form the metal wire polarizer 30 of the present invention.

在一實施例中,若薄金屬層34與金屬線36為相同材質,或者薄金屬層34與金屬線36為不同材質但皆可進行化學反應時,暴露在多條金屬線36之間的薄金屬層34以及多條金屬線36的表層在步驟S14的化學反應中將被轉換為透明的介電層38,如圖9所示。In one embodiment, if the thin metal layer 34 and the metal wire 36 are made of the same material, or the thin metal layer 34 and the metal wire 36 are made of different materials but both can undergo chemical reactions, the thin metal layer 34 exposed between the plurality of metal wires 36 and the surface layer of the plurality of metal wires 36 will be converted into a transparent dielectric layer 38 in the chemical reaction of step S14, as shown in FIG. 9 .

在一實施例中,若薄金屬層34與金屬線36為不同材質且金屬線36不會進行化學反應時,只有暴露在多條金屬線36之間的薄金屬層34在步驟S14的化學反應中被轉換為透明的介電層38,如圖10所示。In one embodiment, if the thin metal layer 34 and the metal wires 36 are made of different materials and the metal wires 36 do not undergo chemical reactions, only the thin metal layer 34 exposed between the plurality of metal wires 36 is converted into a transparent dielectric layer 38 during the chemical reaction in step S14, as shown in FIG. 10 .

在一實施例中,當薄金屬層34與金屬線36為不同材質且薄金屬層34的活性大於金屬線36時,在步驟S14的化學反應後,薄金屬層34有較多部分被轉換為介電層38,因此金屬線柵將呈現上寬下窄的形狀,如圖11所示。In one embodiment, when the thin metal layer 34 and the metal wire 36 are made of different materials and the activity of the thin metal layer 34 is greater than that of the metal wire 36, after the chemical reaction in step S14, a larger portion of the thin metal layer 34 is converted into the dielectric layer 38, so the metal wire grid will present a shape that is wider at the top and narrower at the bottom, as shown in FIG. 11 .

在一實施例中,金屬線36可以由多層不同材料組成。如圖12所示,每一條金屬線36包括一第一金屬層362及一第二金屬層364。當第一金屬層362的活性大於第二金屬層364時,在步驟S14的化學反應後,第一金屬層362有較多部分被轉換為介電層38,因此金屬線36將呈現上窄下寬的形狀,如圖12所示。相反的,當第一金屬層362的活性小於第二金屬層364時,在步驟S14的化學反應後,第二金屬層364有較多部分被轉換為介電層38,因此金屬線36將呈現上寬下窄的形狀。In one embodiment, the metal line 36 may be composed of multiple layers of different materials. As shown in FIG12 , each metal line 36 includes a first metal layer 362 and a second metal layer 364. When the activity of the first metal layer 362 is greater than that of the second metal layer 364, after the chemical reaction in step S14, a larger portion of the first metal layer 362 is converted into the dielectric layer 38, so the metal line 36 will present a shape that is narrow at the top and wide at the bottom, as shown in FIG12 . On the contrary, when the activity of the first metal layer 362 is less than that of the second metal layer 364, after the chemical reaction in step S14, a larger portion of the second metal layer 364 is converted into the dielectric layer 38, so the metal line 36 will present a shape that is wide at the top and narrow at the bottom.

圖13是本發明金屬線偏光片的製作方法的第二實施例。圖14至圖19用以說明圖13的製作方法。如圖13步驟S20及圖14所示,本發明金屬線偏光片50的製作方法包括在一透明基板32上形成一光學薄膜層52,其中光學薄膜層52可以是但不限於抗反射層。在形成光學薄膜層52後,進行步驟S22。在光學薄膜層52上形成一薄金屬層34,如圖15所示。Figure 13 is a second embodiment of the manufacturing method of the metal linear polarizer of the present invention. Figures 14 to 19 are used to illustrate the manufacturing method of Figure 13. As shown in step S20 of FIG. 13 and FIG. 14 , the manufacturing method of the metal linear polarizer 50 of the present invention includes forming an optical film layer 52 on a transparent substrate 32 , where the optical film layer 52 may be but is not limited to an anti-reflective layer. After the optical film layer 52 is formed, step S22 is performed. A thin metal layer 34 is formed on the optical film layer 52, as shown in FIG. 15 .

在形成薄金屬層34後,接著進行步驟S24。在步驟S24中,先於薄金屬層34上形成一光阻圖案40,如圖16所示。形成光阻圖案40後,接著利用電鑄製程在薄金屬層34未被光阻圖案40覆蓋的區域上形成多條平行排列的金屬線36,如圖17所示。薄金屬層34與金屬線36的材質可以相同或不同。在形成多條金屬線36後,將光阻圖案40移除,如圖18所示。After the thin metal layer 34 is formed, step S24 is performed. In step S24, a photoresist pattern 40 is first formed on the thin metal layer 34, as shown in FIG16. After the photoresist pattern 40 is formed, a plurality of parallel metal lines 36 are formed on the area of the thin metal layer 34 not covered by the photoresist pattern 40 by an electroplating process, as shown in FIG17. The materials of the thin metal layer 34 and the metal lines 36 can be the same or different. After the plurality of metal lines 36 are formed, the photoresist pattern 40 is removed, as shown in FIG18.

在形成多條金屬線36並移除光阻圖案後,進行步驟S26。步驟S26是對薄金屬層34暴露在多條金屬線36之間的部分進行化學反應,以將該部分轉換成為透明的介電層38,使得入射光線可以穿過。若薄金屬層34與金屬線36為相同材質,或者薄金屬層34與金屬線36為不同材質但皆可進行化學反應時,暴露在多條金屬線36之間的薄金屬層34以及多條金屬線36的表層在步驟S26的化學反應中將被轉換為透明的介電層38,如圖19所示。在步驟S26的化學反應後,薄金屬層34與金屬線36組成金屬線柵,以形成本發明的金屬線偏光片50。步驟S26的化學反應包括但不限於氧化、氮化、氟化或硫化。After forming the plurality of metal lines 36 and removing the photoresist pattern, step S26 is performed. Step S26 is to chemically react the portion of the thin metal layer 34 exposed between the plurality of metal lines 36 to convert the portion into a transparent dielectric layer 38, so that incident light can pass through. If the thin metal layer 34 and the metal lines 36 are made of the same material, or the thin metal layer 34 and the metal lines 36 are made of different materials but both can undergo a chemical reaction, the thin metal layer 34 exposed between the plurality of metal lines 36 and the surface layer of the plurality of metal lines 36 will be converted into a transparent dielectric layer 38 in the chemical reaction of step S26, as shown in FIG. 19 . After the chemical reaction in step S26, the thin metal layer 34 and the metal wire 36 form a metal wire grid to form the metal wire polarizer 50 of the present invention. The chemical reaction in step S26 includes but is not limited to oxidation, nitridation, fluorination or sulfidation.

本發明的製作方法是是利用電鑄製程來形成金屬線36,因此本發明的金屬線偏光片30及50的成本較低,而且多條金屬線36之間的薄金屬層34會通過化學反應而轉換為透明的介電層38,所以本發明的金屬線偏光片具有良好穿透率與消光比。另一方面,圖2及圖3的金屬線偏光片10及20的金屬線柵只包含金屬線14或26,而圖10的金屬線偏光片30的金屬線柵包含了薄金屬層34與金屬線36,因此本發明金屬線偏光片30的金屬線柵的高度會大於金屬線偏光片10及20的金屬線柵的高度,因而具有更好的穿透率與消光比。在圖9及圖19中,化學反應使得金屬線36的表層轉化為介電層38,一般來說,被轉化的表層的厚度不會大於薄金屬層34的厚度,因此相較於的圖2及圖3的金屬線偏光片10及20的金屬線柵,圖9及圖19的金屬線偏光片30及50的金屬線柵具有較小的寬度及較高的高度,因而具有更好的穿透率與消光比。The manufacturing method of the present invention is to form the metal wire 36 by an electrocasting process, so the cost of the metal wire polarizer 30 and 50 of the present invention is relatively low, and the thin metal layer 34 between the plurality of metal wires 36 is converted into a transparent dielectric layer 38 through a chemical reaction, so the metal wire polarizer of the present invention has good transmittance and extinction ratio. On the other hand, the metal wire grid of the metal wire polarizer 10 and 20 of FIG. 2 and FIG. 3 only includes the metal wire 14 or 26, while the metal wire grid of the metal wire polarizer 30 of FIG. 10 includes the thin metal layer 34 and the metal wire 36, so the height of the metal wire grid of the metal wire polarizer 30 of the present invention is greater than the height of the metal wire grid of the metal wire polarizer 10 and 20, and thus has better transmittance and extinction ratio. In FIGS. 9 and 19 , the chemical reaction causes the surface layer of the metal wire 36 to be converted into a dielectric layer 38. Generally speaking, the thickness of the converted surface layer will not be greater than the thickness of the thin metal layer 34. Therefore, compared with the metal wire grids of the metal wire polarizers 10 and 20 of FIGS. 2 and 3 , the metal wire grids of the metal wire polarizers 30 and 50 of FIGS. 9 and 19 have a smaller width and a higher height, and thus have better transmittance and extinction ratio.

以上所述僅是本發明的實施例而已,並非對本發明做任何形式上的限制,雖然本發明已以實施例揭露如上,然而並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明技術方案的範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本發明技術方案的範圍內。The above is only an embodiment of the present invention and does not constitute any form of limitation on the present invention. Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes or modifications to the technical contents disclosed above into equivalent embodiments within the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

10:金屬線偏光片 12:透明基板 14:金屬線 20:金屬線偏光片 22:透明基板 24:透明導電層 26:金屬線 30:金屬線偏光片 32:透明基板 34:薄金屬層 36:金屬線 38:介電層 40:光阻圖案 50:金屬線偏光片 52:光學薄膜層 Er:消光比 H:高度 Ip:P偏極光 Is:S偏極光 Li:入射光 Lr:反射光 Lt:穿透光 Rs:S偏極光 S10:步驟 S12:步驟 S14:步驟 S20:步驟 S22:步驟 S24:步驟 S26:步驟 Tp:P偏極光 Tr:穿透率 Ts:S偏極光 W:線寬10: Metal wire polarizer 12: Transparent substrate 14: Metal wire 20: Metal wire polarizer 22: Transparent substrate 24: Transparent conductive layer 26: Metal wire 30: Metal wire polarizer 32: Transparent substrate 34: Thin metal layer 36: Metal wire 38: Dielectric layer 40: Photoresist pattern 50: Metal wire polarizer 52: Optical thin film layer Er: Extinction ratio H: Height Ip: P polarized light Is: S polarized light Li: Incident light Lr: Reflected light Lt: Transmitted light Rs: S polarized light S10: Step S12: Step S14: Step S20: Step S22: Step S24: Step S26: Step Tp: P polarized light Tr: Transmittance Ts: S polarized light W: Line width

圖1顯示傳統的金屬線偏光片。 圖2顯示圖1的金屬線偏光片的剖面圖。 圖3顯示使用電鑄製程製作的金屬線偏光片的剖面圖。 圖4顯示本發明金屬線偏光片的製作方法的第一實施例。 圖5至圖10是用以說明圖4的製作方法。 圖11顯示薄金屬層的活性大於金屬線時的實施例。 圖12顯示金屬線由多層不同材料組成的實施例。 圖13顯示本發明金屬線偏光片的製作方法的第二實施例。 圖14至圖19是用以說明圖13的製作方法。 FIG. 1 shows a conventional metal wire polarizer. FIG. 2 shows a cross-sectional view of the metal wire polarizer of FIG. 1. FIG. 3 shows a cross-sectional view of a metal wire polarizer made using an electrocasting process. FIG. 4 shows a first embodiment of a method for making a metal wire polarizer of the present invention. FIG. 5 to FIG. 10 are used to illustrate the method for making FIG. 4. FIG. 11 shows an embodiment in which the activity of a thin metal layer is greater than that of a metal wire. FIG. 12 shows an embodiment in which a metal wire is composed of multiple layers of different materials. FIG. 13 shows a second embodiment of a method for making a metal wire polarizer of the present invention. FIG. 14 to FIG. 19 are used to illustrate the method for making FIG. 13.

S10:步驟 S10: Step

S12:步驟 S12: Step

S14:步驟 S14: Step

Claims (7)

一種金屬線偏光片的製作方法,包括下列步驟: 在一透明基板上形成一薄金屬層; 利用電鑄製程在該薄金屬層上形成多條金屬線,其中該多條金屬線平行排列,該薄金屬層的一部分暴露在該多條金屬線之間;以及 進行化學反應以將該薄金屬層的該部分轉換為透明的介電層,以形成該金屬線偏光片。 A method for manufacturing a metal line polarizer comprises the following steps: forming a thin metal layer on a transparent substrate; forming a plurality of metal lines on the thin metal layer by an electrocasting process, wherein the plurality of metal lines are arranged in parallel and a portion of the thin metal layer is exposed between the plurality of metal lines; and performing a chemical reaction to convert the portion of the thin metal layer into a transparent dielectric layer to form the metal line polarizer. 如請求項1所述的製作方法,其中該化學反應包括氧化、氮化、氟化或硫化。A production method as described in claim 1, wherein the chemical reaction includes oxidation, nitridation, fluorination or sulfidation. 如請求項1所述的製作方法,其中該多條金屬線的表層通過該化學反應轉換為該介電層。The manufacturing method as described in claim 1, wherein the surface layer of the plurality of metal wires is converted into the dielectric layer through the chemical reaction. 如請求項1所述的製作方法,其中該多條金屬線與該薄金屬層是同一材質。A manufacturing method as described in claim 1, wherein the plurality of metal wires and the thin metal layer are made of the same material. 如請求項1所述的製作方法,其中該多條金屬線與該薄金屬層是不同材質。A manufacturing method as described in claim 1, wherein the plurality of metal wires and the thin metal layer are made of different materials. 如請求項1所述的製作方法,其中每一條該金屬線包括多層不同材料。The manufacturing method as described in claim 1, wherein each of the metal lines includes multiple layers of different materials. 如請求項1所述的製作方法,更包括在該透明基板及該薄金屬層之間形成一光學薄膜層。The manufacturing method as described in claim 1 further includes forming an optical thin film layer between the transparent substrate and the thin metal layer.
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CN112965288A (en) * 2021-02-02 2021-06-15 深圳市华星光电半导体显示技术有限公司 Preparation method of built-in polarizer and polarizer
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TW201431668A (en) * 2012-10-05 2014-08-16 Jx Nippon Oil & Energy Corp Manufacturing method of optical substrate using film mold, manufacturing apparatus, and obtained optical substrate
CN104765094A (en) * 2015-04-24 2015-07-08 张家港康得新光电材料有限公司 Polarization structure, preparing method thereof and display device comprising same
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