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TWI872227B - Connection of components and arrangement having a connecting element and a component - Google Patents

Connection of components and arrangement having a connecting element and a component Download PDF

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Publication number
TWI872227B
TWI872227B TW110109416A TW110109416A TWI872227B TW I872227 B TWI872227 B TW I872227B TW 110109416 A TW110109416 A TW 110109416A TW 110109416 A TW110109416 A TW 110109416A TW I872227 B TWI872227 B TW I872227B
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connection
region
component
nanowires
contact
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TW110109416A
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Chinese (zh)
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TW202145390A (en
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奧拉夫 貝勒姆
弗洛里安 達辛格
塞巴斯蒂安 奎德瑙
法魯 魯斯塔
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德商耐諾維爾德股份有限公司
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Priority claimed from DE102020107513.8A external-priority patent/DE102020107513A1/en
Priority claimed from DE102020107511.1A external-priority patent/DE102020107511A1/en
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    • H10W72/30
    • H10W40/228
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • H10W72/701
    • H10W40/258
    • H10W70/611
    • H10W70/65
    • H10W70/688
    • H10W72/01325
    • H10W72/01335
    • H10W72/01365
    • H10W72/073
    • H10W72/07331
    • H10W72/07332
    • H10W72/07333
    • H10W72/07334
    • H10W72/07352
    • H10W72/07353
    • H10W72/07354
    • H10W72/077
    • H10W72/321
    • H10W72/322
    • H10W72/324
    • H10W72/332
    • H10W72/334
    • H10W72/341
    • H10W72/344
    • H10W72/352
    • H10W72/353
    • H10W72/354
    • H10W72/59
    • H10W72/952
    • H10W90/732
    • H10W90/734

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Wire Bonding (AREA)
  • Secondary Cells (AREA)

Abstract

Method for connecting a first component (2) to a second component (3), comprising: a) providing a connecting element (6) with a respective multiplicity of nanowires (1) on a first connecting area (7) on a first side (10) of the connecting element (6) and on a second connecting area (8) on a second side (11), opposite the first side (10), of the connecting element (6), wherein the first connecting area (7) and the second connecting area (8) are electrically insulated from one another, b) bringing a contact area (4) of the first component (2) and the first connecting area (7) of the connecting element (6) together, and c) bringing a contact area (5) of the second component (3) and the second connecting area (8) of the connecting element (6) together.

Description

組件連接技術及具有一連接元件及一組件之配置 Component connection technology and a configuration having a connection element and a component

發明領域 Invention Field

本發明係關於一種用於將一第一組件連接至一第二組件之方法及連接元件,且亦係關於一種兩個連接在一起之組件特別相對於來自電子器件之組件之配置。 The invention relates to a method and a connecting element for connecting a first component to a second component, and also to a configuration of two components connected together, in particular with respect to components from electronic devices.

本發明亦係關於一種用於將一第一接觸區連接至一第二接觸區之方法及一連接元件之用途,且亦係關於一種兩個連接在一起之接觸區特別相對於來自電子器件之組件之配置。 The invention also relates to a method for connecting a first contact area to a second contact area and the use of a connecting element, and also to a configuration of two contact areas connected together, in particular with respect to a component from an electronic device.

發明背景 Invention background

在廣泛多種應用中,存在將主體相互連接之需求。以實例說明,兩個金屬主體或由不同材料製成之兩個主體可需要相互連接。特別是在電子器件中,情況正是如此。為了形成此種類之連接,自先前技術已知廣泛多種方法。特別已知的係藉由焊接、硬焊或軟焊、黏著劑結合、螺紋連接、鉚接或壓紋連接例如由銅製成之電氣導體或主體之方法。在此種類之方法中,將製備之表面相對於彼此精確地定向,且相互連接。因此有必要將待連接之主體清晰地幾何界定,且在其範圍及其連接位置中縱長地製備。此外,必須預先進行用於產生連接之準備,諸如,鑽孔或提供對應的連接元件。此處,黏著劑結合、螺紋連接及鉚接連 接技術係室溫製程。相比之下,焊接、軟焊及硬焊係熱製程,其中液體金屬經生產且以容積填充及金屬相互作用方式插入至接頭內。 In a wide variety of applications, there is a need to connect bodies to one another. By way of example, two metal bodies or two bodies made of different materials may need to be connected to one another. This is the case in particular in electronic devices. In order to form this type of connection, a wide variety of methods are known from the prior art. Particularly known are methods for connecting electrical conductors or bodies, for example, made of copper, by welding, brazing or soldering, adhesive bonding, threading, riveting or embossing. In methods of this type, the prepared surfaces are precisely oriented relative to one another and connected to one another. It is therefore necessary to clearly define the bodies to be connected geometrically and to prepare them lengthwise in their extent and their connection locations. In addition, preparations for producing the connection must be carried out in advance, such as drilling holes or providing corresponding connecting elements. Here, adhesive bonding, threaded connections and riveted connection technologies are room temperature processes. In contrast, welding, soldering and brazing are hot processes in which liquid metal is produced and inserted into the joint in a volumetric filling and metal interaction manner.

作為通常高達1400℃之其相當大的溫度輸入之結果,焊接具有以下劣勢:一方面,討論中之主體經加熱至一相當大之程度,使得存在觸發可燃材料之著火的風險。待連接之主體之表面之視覺改變亦可發生,此可為有問題的,尤其在具有漆、薄膜或塗層的經預處理表面之情況中。許多材料亦並不可焊接。 As a result of its considerable temperature input, which is usually up to 1400°C, welding has the following disadvantages: On the one hand, the bodies in question are heated to such a great extent that there is a risk of igniting flammable materials. Visual changes in the surface of the bodies to be connected can also occur, which can be problematic, especially in the case of pre-treated surfaces with lacquers, films or coatings. Many materials are also not weldable.

例如銅之硬焊作為其相當大的熱能輸出之結果,可同樣地具有以下結果:在連接中涉及之組件經相當大地加熱(特別是,高於400℃)。此可導致不可燃材料被點燃。 Brazing of copper, for example, can likewise have the consequence, as a result of its considerable heat output, that the components involved in the connection are heated considerably (in particular, above 400°C). This can lead to ignition of non-combustible materials.

例如銅之軟焊可具有以下劣勢:一方面,連接之剪切強度低於所需,且另一方面,在軟焊之情況中的交變溫度負載導致金屬之分層,且因此導致連接之脆變。此可導致連接故障。此外,軟焊具有以下劣勢:其具有比例如純銅顯著大的在連接處之轉移電阻。軟焊連接之再一劣勢在於低機械疲勞強度,其通常僅在高達大致120℃下存在。此種類之連接針對酸性介質之耐腐蝕性亦通常不充分。 Soft soldering of copper, for example, can have the following disadvantages: On the one hand, the shear strength of the connection is lower than necessary, and on the other hand, the alternating temperature load in the case of soft soldering leads to delamination of the metal and thus to embrittlement of the connection. This can lead to connection failures. Furthermore, soft soldering has the disadvantage that it has a significantly greater transfer resistance at the connection than, for example, pure copper. A further disadvantage of soft soldered connections is the low mechanical fatigue strength, which generally only exists up to approximately 120° C. The corrosion resistance of this type of connection with respect to acidic media is also generally inadequate.

在諸如銅組件之特定傳導性組件之黏著性結合期間,通常存在以下劣勢:電氣轉移電阻受到黏著性結合在相當大之程度上的不利影響。就連接之機械強度而言的機械要求不能始終由傳導性結合滿足。充分機械強度通常僅在僅120℃之溫度範圍下存在。此可特別使在暖或熱環境中之使用及/或熱介質之使用不可能。 During the adhesive bonding of certain conductive components such as copper components, the following disadvantages generally exist: The electrical transfer resistance is adversely influenced by the adhesive bonding to a considerable extent. The mechanical requirements with regard to the mechanical strength of the connection cannot always be met by the conductive bond. Sufficient mechanical strength generally exists only in a temperature range of only 120°C. This can in particular make use in warm or hot environments and/or the use of thermal media impossible.

在螺紋連接及鉚接之情況中,必須以特別精確方式將該等部分拉倒在一起。所需之孔洞及藉由螺釘或鉚釘連接之組裝此外通常導致全部構造之視覺及機械外觀之視覺損傷。此外,就構造而言,有必要確保預先知曉將進行連接之精確位置。未按長度定義的組件之可使用性可因此變得更困難或受到阻止。 此外,在此連接之情況中,在該等組件之間通常存在一殘餘間隙。作為毛細作用之結果,水分可進入殘餘間隙且可隨後發生腐蝕。腐蝕可損傷連接。連接之電氣及/或熱轉移電阻亦可增大。此外,用於螺釘或鉚釘之可引起連接之區域中的洩漏。此可使此連接之使用更難用於容器或壓力系統,例如,特別在於,需要額外密封構件。 In the case of threaded connections and riveted connections, the parts must be pulled together in a particularly precise manner. The required holes and the assembly by means of screws or rivets also often result in a visual impairment of the visual and mechanical appearance of the entire construction. Furthermore, in terms of construction, it is necessary to ensure that the exact location at which the connection is to be made is known in advance. The usability of components that are not defined by length can thus become more difficult or be prevented. In addition, in the case of such connections, there is often a residual gap between the components. As a result of capillary action, moisture can enter the residual gap and corrosion can subsequently occur. Corrosion can damage the connection. The electrical and/or thermal transfer resistance of the connection can also be increased. Furthermore, the screws or rivets used can cause leakage in the area of the connection. This can make the use of this connection more difficult for containers or pressure systems, for example, in particular because additional sealing components are required.

發明概要 Summary of invention

自此繼續,本發明之一目標為解決或至少減輕結合先前技術論述之技術問題。意圖特別是提出一種用於將一第一組件連接至一第二組件之方法及連接元件,及亦提出一種兩個連接在一起之組件之配置,在此情況中,在該等組件之間以一特別可靠且簡單方式形成或已形成一連接,該連接特別機械穩定且具有一特別良好熱傳導性。 Continuing from this, one object of the present invention is to solve or at least alleviate the technical problems associated with the previous technical discussions. The intention is in particular to propose a method and a connecting element for connecting a first component to a second component, and also to propose an arrangement of two components connected together, in which case a connection is or has been formed between the components in a particularly reliable and simple manner, which connection is particularly mechanically stable and has a particularly good thermal conductivity.

自此繼續,本發明之一目標為解決或至少減輕結合先前技術論述之技術問題。意圖特別是提出一種用於將一第一組件連接至一第二組件之方法及連接元件,及亦提出一種兩個連接在一起之組件之配置,在此情況中,在該等組件之間以一特別可靠且簡單方式形成或已形成一連接,該連接特別機械穩定且具有一特別良好熱傳導性。 Continuing from this, one object of the present invention is to solve or at least alleviate the technical problems associated with the previous technical discussions. The intention is in particular to propose a method and a connecting element for connecting a first component to a second component, and also to propose an arrangement of two components connected together, in which case a connection is or has been formed between the components in a particularly reliable and simple manner, which connection is particularly mechanically stable and has a particularly good thermal conductivity.

意圖亦特別提出一種用於將一第一接觸區連接至一第二接觸區之方法及一連接元件之用途,及亦提出一種兩個連接在一起之接觸區之配置,在此情況中,在該等接觸區之間以一特別可靠且簡單方式形成或已形成一連接,該連接特別機械穩定且具有一特別良好之電氣及/或熱傳導性。 The intention is also to propose, in particular, a method for connecting a first contact area to a second contact area and the use of a connecting element, and also to propose an arrangement of two contact areas connected together, in which case a connection is or has been formed between the contact areas in a particularly reliable and simple manner, which connection is particularly mechanically stable and has a particularly good electrical and/or thermal conductivity.

該等目標係由一種方法、由一種連接元件、由一連接元件之用途及由一種配置按照獨立專利申請專利範圍之特徵達成。在各別獨立提出之專利申請專利範圍中指定另外有利改進。在專利技術方案中個別指定之特徵可以任 何所要的技術有利方式相互組合,且可由來自描述之解釋性實情補充,其中突出了本發明之另外設計變型。 These objects are achieved by a method, by a connection element, by the use of a connection element and by a configuration according to the features of the independent patent application. Further advantageous improvements are specified in the respective independently filed patent application. The features specified individually in the patent solution can be combined with one another in any desired technically advantageous manner and can be supplemented by explanatory facts from the description, which highlight further design variants of the invention.

根據本發明,提出一種用於將一第一組件連接至一第二組件之方法。該方法包含:a)提供一連接元件,該連接元件具有在該連接元件之一第一側上的一第一連接區上及在該連接元件之與該第一側相對的一第二側上的一第二連接區上之大量各別奈米線,其中該第一連接區與該第二連接區相互電氣絕緣,b)使該第一組件之一接觸區與該連接元件之該第一連接區在一起,以及c)使該第二組件之一接觸區與該連接元件之該第二連接區在一起。 According to the present invention, a method for connecting a first component to a second component is provided. The method comprises: a) providing a connection element having a plurality of individual nanowires on a first connection region on a first side of the connection element and on a second connection region on a second side of the connection element opposite to the first side, wherein the first connection region and the second connection region are electrically insulated from each other, b) bringing a contact region of the first component together with the first connection region of the connection element, and c) bringing a contact region of the second component together with the second connection region of the connection element.

該第一組件及該第二組件較佳地為電子組件,諸如,半導體組件、電腦晶片、微處理器或印刷電路板。該第一組件及/或該第二組件較佳地至少部分導熱。該第一組件及/或該第二組件可全部或部分導電或電氣絕緣。作為該等連接區之間的電氣絕緣之結果,導電組件亦未相互導電連接。 The first component and the second component are preferably electronic components, such as semiconductor components, computer chips, microprocessors or printed circuit boards. The first component and/or the second component are preferably at least partially thermally conductive. The first component and/or the second component may be fully or partially electrically conductive or electrically insulating. As a result of the electrical insulation between the connection areas, the electrically conductive components are also not electrically connected to each other.

在此處使用之意義中的導電率及/或導熱率特別存在於諸如銅之金屬中,該等金屬通常被稱作「導電性」或等效地稱作「導電」或「導熱性」或「導熱」。特別是,通常視為電氣及/或熱絕緣之材料在此處並不意欲被考慮為導電性及/或導熱性。在任何情況中,若在四點量測中於以下條件下將該第一連接區與該第二連接區之間的一電阻量測為至少100KΩ,則該第一連接區及該第二連接區意欲被視為相互電氣絕緣:室溫、空氣濕度20%、在恆定電壓(亦即,並非處於交流電壓)下之量測、藉由在該第一連接區上及在該第二連接區上之一各別電極的量測,該等電極在1cm2之一面積上接觸該各別連接區。 Electrical conductivity and/or thermal conductivity in the sense used herein is particularly present in metals such as copper, which are often referred to as "conductive" or equivalently as "electrically conductive" or "thermally conductive" or "thermally conductive". In particular, materials that are usually considered to be electrically and/or thermally insulating are not intended to be considered as being electrically and/or thermally conductive herein. In any case, the first connection region and the second connection region are intended to be considered to be electrically isolated from each other if a resistance between the first connection region and the second connection region is measured to be at least 100 KΩ under the following conditions in a four-point measurement: room temperature, air humidity 20%, measurement at a constant voltage (i.e., not under alternating voltage), measurement by a respective electrode on the first connection region and on the second connection region, the electrodes contacting the respective connection region over an area of 1 cm2.

描述之方法不限於在電子器件之領域中的應用。舉例而言,根據描述之方法,將諸如一感測器之一組件(作為一第一組件)安裝於一壁或座架(作為一第二組件)上亦係可能的。藉由描述之方法,在該第一組件與該第二組件之 間形成一機械穩定、電氣絕緣且較佳地導熱性連接特別有可能。描述之方法可因此用於需要兩個組件之間的一對應連接之所有領域中。該描述之方法亦不限於該等組件之某一大小。該描述之方法因此適合於例如在電子學(特別是,微電子學)之領域中的應用,或適合於在巨觀級別上的相當較大組件之連接。 The method described is not limited to applications in the field of electronics. For example, according to the method described, it is also possible to mount a component such as a sensor (as a first component) on a wall or a mount (as a second component). By means of the method described, it is particularly possible to form a mechanically stable, electrically insulating and preferably thermally conductive connection between the first component and the second component. The method described can therefore be used in all fields in which a corresponding connection between two components is required. The method described is also not limited to a certain size of the components. The method described is therefore suitable, for example, for applications in the field of electronics, in particular microelectronics, or for the connection of relatively large components on a macroscopic level.

該等組件可經由各別接觸區連接至該連接元件。一接觸區特別為該各別組件之一表面之一空間上顯著的區域。特別是,該等接觸區因該連接之形成而顯著係較佳的。此意謂該接觸區一開始並不與該組件之該表面之其餘處不同,且僅因該連接之形成而有區分,在於該接觸區係形成該連接所在之區。在此情況中,該接觸區一開始僅在概念上與該組件之該表面之該其餘處有所差異。在該等接觸區之區域中,該連接元件之該等奈米線可與該各別組件接觸。 The components can be connected to the connection element via respective contact areas. A contact area is in particular a spatially significant area of a surface of the respective component. In particular, it is preferred that the contact areas are significant due to the formation of the connection. This means that the contact area does not initially differ from the rest of the surface of the component and is distinguished only by the formation of the connection, in that the contact area is the area in which the connection is formed. In this case, the contact area initially differs only conceptually from the rest of the surface of the component. In the region of the contact areas, the nanowires of the connection element can make contact with the respective component.

在各情況中,該等接觸區較佳地為該各別組件之該表面之簡單相鄰形式之區域。作為一替代,將該第一組件及/或該第二組件之該各別接觸區細分成該各別組件之該表面的多個單獨子區域係可能的。一接觸區可因此包含該各別組件之該表面之兩個或更多個單獨部分。該等接觸區可為導電性及/或導熱性,或電氣絕緣及/或熱絕緣。由於該等連接區之間的該電氣絕緣,在任何情況中,該連接係電氣絕緣的。 In each case, the contact areas are preferably areas of simply adjacent form of the surface of the respective component. As an alternative, it is possible to subdivide the respective contact area of the first component and/or the second component into a plurality of separate subareas of the surface of the respective component. A contact area may thus comprise two or more separate parts of the surface of the respective component. The contact areas may be electrically and/or thermally conductive, or electrically and/or thermally insulating. Due to the electrical insulation between the connection areas, the connection is in any case electrically insulating.

較佳地,該等組件具有剛性設計,或具有至少一個剛性表面,該各別接觸區提供於該剛性表面上。此特別意謂,該等組件(或至少該等接觸區)較佳地並不可撓。藉由剛性組件或接觸區,有可能根據該描述之方法以一特別令人滿意之方式形成一連接。若例如該等組件中之一者將具有可撓性設計,則該連接可能由於該等奈米線之一負載而破壞。然而,取決於精確情況,有利地藉由可撓性組件或接觸區來實施該描述之方法亦係可能的。 Preferably, the components have a rigid design or have at least one rigid surface on which the respective contact area is provided. This means in particular that the components (or at least the contact areas) are preferably not flexible. With rigid components or contact areas, it is possible to form a connection in a particularly satisfactory manner according to the described method. If, for example, one of the components were to have a flexible design, the connection could be destroyed by a loading of the nanowires. However, depending on the precise circumstances, it is also possible to implement the described method advantageously with flexible components or contact areas.

在該描述之方法中,經由大量奈米線形成該等第一組件與該連接元件之間的該等連接。 In the described method, the connections between the first components and the connecting element are formed via a plurality of nanowires.

此處,奈米線應理解為意謂具有線狀形式及在自數奈米至數微米之範圍中的一大小之任何材料主體。奈米線可例如具有一圓形、橢圓形或多邊形基面。特別是,奈米線可具有一六邊形基面。較佳地,該連接中涉及之所有該等奈米線自相同材料形成。依靠該連接元件之組態,當該等奈米線自一導電性材料形成時,亦提供在待連接之該等組件之該等接觸區之間的一電氣絕緣。因此該等奈米線自一導電性及/或自一電氣絕緣性材料形成係可能的。 Here, nanowires are understood to mean any material body having a linear form and a size in the range from a few nanometers to a few micrometers. A nanowire may, for example, have a circular, elliptical or polygonal base. In particular, a nanowire may have a hexagonal base. Preferably, all the nanowires involved in the connection are formed from the same material. Depending on the configuration of the connecting element, when the nanowires are formed from a conductive material, an electrical insulation between the contact areas of the components to be connected is also provided. It is therefore possible for the nanowires to be formed from a conductive and/or from an electrically insulating material.

在該第一連接區上之該等奈米線較佳地自與在該第二連接區上之該等奈米線相同的材料形成。作為一替代,較佳地,在該第一連接區上之該等奈米線與在該第二連接區上之該等奈米線自不同材料形成。 The nanowires on the first connection region are preferably formed from the same material as the nanowires on the second connection region. Alternatively, the nanowires on the first connection region and the nanowires on the second connection region are preferably formed from different materials.

特別較佳地,在該第一連接區上之該等奈米線及/或在該第二連接區上之該等奈米線自一各別金屬形成。進一步較佳地,在該第一連接區上之該等奈米線自該第一組件之該接觸區之材料形成,及/或在該第二連接區上之該等奈米線自該第二組件之該接觸區之材料形成。若該等奈米線自與該各別接觸區相同之材料形成,則可形成一特別緊密連接。然而,在任何情況中,在具有類似之一擴散趨勢之材料之間的連接亦係可能的。因此,舉例而言,有可能易於將銅連接至銀、鎳或金。 Particularly preferably, the nanowires on the first connection region and/or the nanowires on the second connection region are formed from a respective metal. Further preferably, the nanowires on the first connection region are formed from the material of the contact region of the first component and/or the nanowires on the second connection region are formed from the material of the contact region of the second component. If the nanowires are formed from the same material as the respective contact region, a particularly tight connection can be formed. However, in any case, connections between materials having a similar diffusion tendency are also possible. Thus, for example, it is possible to easily connect copper to silver, nickel or gold.

取決於該等奈米線之材料,該連接可具有不同性質。特別是,該連接之機械強度及導熱率受到該等奈米線之材料影響。作為在該等兩個連接區上之該等奈米線自不同材料形成之事實之結果,有可能形成具有不同性質之兩個連接。該連接元件可因此亦被視為待連接之該等兩個組件之間的一促進器,此係因為將另外不可相互連接或將僅可困難地連接之兩個組件可經由該連接元件相互連接。 Depending on the material of the nanowires, the connection can have different properties. In particular, the mechanical strength and thermal conductivity of the connection are influenced by the material of the nanowires. As a result of the fact that the nanowires on the two connection regions are formed from different materials, it is possible to form two connections with different properties. The connecting element can therefore also be regarded as a facilitator between the two components to be connected, since two components that would otherwise not be connectable to one another or would only be connectable with difficulty can be connected to one another via the connecting element.

該等奈米線較佳地具有在自100nm[奈米]至100μm[微米]之範圍中、特別是在自500nm至60μm之範圍中的一長度。此外,該等奈米線較佳地具 有在自10nm至10μm之範圍中、特別是在自30nm至2μm之範圍中的一直徑。此處,術語「直接」係關於一圓基面,其中,在與此圓基面偏離之一基面之情況中,將考慮類似之直徑定義。特別較佳地,所有使用之奈米線具有相同長度及相同直徑。 The nanowires preferably have a length in the range from 100 nm [nanometer] to 100 μm [micrometer], in particular in the range from 500 nm to 60 μm. Furthermore, the nanowires preferably have a diameter in the range from 10 nm to 10 μm, in particular in the range from 30 nm to 2 μm. Here, the term "directly" refers to a circular base surface, wherein in the case of a base surface deviating from this circular base surface, a similar definition of diameter is considered. Particularly preferably, all nanowires used have the same length and the same diameter.

在目前描述之方法中,該等組件經由該連接元件間接地相互連接。此具有以下優勢:奈米線並不需要提供於該等組件中之任一者上。該等奈米線存在於該連接元件上係足夠的。特別是,較佳地,奈米線不提供於該等組件之該等接觸區上,而相反地,僅提供於該連接元件之該等連接區上。此可使該方法之執行更容易,且特別是,亦拓寬該方法對不可接取或僅可困難地接取以用於奈米線之生長的彼等組件之應用領域。該等奈米線之生長亦可與該等組件分開來局部地實行。然而,替代較佳地,大量各別奈米線亦提供於該第一組件之該接觸區上及/或該第二組件之該接觸區上。 In the method currently described, the components are connected to each other indirectly via the connecting element. This has the following advantages: the nanowires do not need to be provided on any of the components. It is sufficient for the nanowires to be present on the connecting element. In particular, preferably, the nanowires are not provided on the contact areas of the components, but on the contrary, only on the connection areas of the connecting element. This makes it easier to carry out the method and, in particular, also broadens the field of application of the method to those components that are inaccessible or only accessible with difficulty for the growth of the nanowires. The growth of the nanowires can also be carried out locally separately from the components. However, alternatively preferably, a large number of individual nanowires are also provided on the contact area of the first component and/or on the contact area of the second component.

該連接元件較佳地具有可撓性組態。作為一替代,較佳地,該連接元件具有剛性組態。該連接元件可例如按一實心小金屬板之形式組配。在彼情況中,該等連接區之間的該電氣絕緣可藉由一或多個塗層達成。 The connection element preferably has a flexible configuration. As an alternative, the connection element preferably has a rigid configuration. The connection element can be assembled, for example, in the form of a solid small metal plate. In that case, the electrical insulation between the connection areas can be achieved by one or more coatings.

較佳地,該連接元件自一塑膠形成。以實例說明,該連接元件可自一聚合物形成,特別是,自聚碳酸酯、PVC、聚酯、聚乙烯、聚醯胺及/或PET。該連接元件例如自一陶瓷材料、矽、氧化鋁或玻璃形成亦係可能的。此外,該連接元件可自不銹鋼、鋁或非鐵金屬形成。該連接元件自包含提到之材料中之若干種之複合材料形成亦係較佳的。 Preferably, the connecting element is formed from a plastic. By way of example, the connecting element can be formed from a polymer, in particular, from polycarbonate, PVC, polyester, polyethylene, polyamide and/or PET. It is also possible that the connecting element is formed, for example, from a ceramic material, silicon, alumina or glass. Furthermore, the connecting element can be formed from stainless steel, aluminum or non-ferrous metal. It is also preferred that the connecting element is formed from a composite material comprising several of the materials mentioned.

在步驟a)中,提供一連接元件,其具有兩個連接區。該等兩個連接區各具有大量奈米線。該第一連接區配置於該連接元件之第一側上,且該第二連接區配置於該連接元件之第二側上。該連接元件之該第一側及該第二側以一相互相對方式配置。該連接元件之該第一側為該連接元件之在形成該連接後面向 該第一組件的彼側。該連接元件之該第二側為該連接元件之在形成該連接後面向該第二組件的彼側。該等組件可因此藉由該描述之方法連接,因為在形成該連接後,該等兩個組件之該等接觸區以一相互相對方式配置於該連接元件之該等兩個側上。在此情況中,該等兩個接觸區之間的一間距僅由該連接元件之厚度及由該等奈米線所佔據之空間引起。 In step a), a connection element is provided, which has two connection regions. The two connection regions each have a large number of nanowires. The first connection region is arranged on a first side of the connection element, and the second connection region is arranged on a second side of the connection element. The first side and the second side of the connection element are arranged in a mutually opposite manner. The first side of the connection element is the side of the connection element that faces the first component after the connection is formed. The second side of the connection element is the side of the connection element that faces the second component after the connection is formed. The components can therefore be connected by the described method because, after the connection is formed, the contact regions of the two components are arranged on the two sides of the connection element in a mutually opposite manner. In this case, a distance between the two contact areas is caused only by the thickness of the connecting element and by the space occupied by the nanowires.

在該描述之方法中之步驟a)中提供該連接元件。在此情況中,一方面,提供應理解為意謂如所描述而組配之一連接元件提供為該方法之部分。因此,作為該方法之部分,將該等奈米線應用至該等連接區特別有可能,特別是,藉由電流生長。然而,另一方面,提供亦包含使用一連接元件,在該連接元件上,該等奈米線已經提供於該等連接區上。因此,舉例而言,一對應準備之連接元件自一供應商獲得且用於該描述之方法係可能的。以此方式獲得一準備之連接元件亦係在此使用之意義上的一連接元件之提供。 In step a) of the described method, the connection element is provided. In this case, provision is to be understood, on the one hand, as meaning that a connection element assembled as described is provided as part of the method. Thus, as part of the method, it is particularly possible to apply the nanowires to the connection regions, in particular by current growth. However, on the other hand, provision also encompasses the use of a connection element on which the nanowires are already provided on the connection regions. Thus, for example, it is possible that a correspondingly prepared connection element is obtained from a supplier and used for the described method. Obtaining a prepared connection element in this way is also a provision of a connection element in the sense used here.

該等奈米線較佳地按使得該等奈米實質上垂直於(較佳地,垂直於)該各別連接區之一方式提供於該等連接區上。在一連接區上之全部該等奈米線可特別被稱作奈米線中之一塊。然而,該等奈米線亦可在任一所要的定向上提供於該等連接區上。將一連接區細分成多個(連接在一起或單獨)子區域亦係可能的,其中該等奈米線在該等各種子區域中不同地定向。以此方式,可利用一特別穩定連接,該連接特別地亦能夠以一特別令人滿意之方式承受剪切力。此外,該等奈米線不同地組配於該等連接區之各點處係可能的,特別是,關於其長度、直徑、材料及密度(奈米線之密度指定每單位面積提供多少奈米線)。 The nanowires are preferably provided on the connection regions in such a way that they are substantially perpendicular (preferably, perpendicular) to the respective connection regions. All of the nanowires on a connection region may in particular be referred to as a block of nanowires. However, the nanowires may also be provided on the connection regions in any desired orientation. It is also possible to subdivide a connection region into a plurality of (connected together or individually) subregions, wherein the nanowires are oriented differently in the various subregions. In this way, a particularly stable connection may be utilized, which in particular is also able to withstand shear forces in a particularly satisfactory manner. Furthermore, it is possible to arrange the nanowires differently at various points in the connection regions, in particular with regard to their length, diameter, material and density (the density of the nanowires specifies how many nanowires are provided per unit area).

該連接元件可特別地理解為該第一組件與該第二組件之間的該連接之一中間物。特別將適合於配置於該等組件之該等接觸區之間以用於該等組件之連接的任一實體物件考慮為連接元件。 The connecting element can be understood in particular as an intermediate object of the connection between the first component and the second component. In particular, any physical object suitable for being arranged between the contact areas of the components for the connection of the components is considered as a connecting element.

一連接區特別為在該連接元件之各別側上的該連接元件之一表面 之一空間上顯著的區域。特別是,該等連接區因該連接之形成而顯著係較佳的。此意謂該等連接區一開始並不與該連接元件之該表面之其餘處不同,且僅因該連接之形成而有區分,在於該等連接區係形成該連接所在之區。在此情況中,在形成該連接前,該等連接區僅在概念上與該連接元件之該表面之該其餘處有所差異。以實例說明,一區連接元件之一連接區可為顯著的,在於,至該各別組件之一區連接形成於該連接元件之一劃定區上(亦即,在該連接區上)。 A connection zone is in particular a spatially prominent area of a surface of the connection element on the respective side of the connection element. In particular, it is preferred that the connection zones are prominent due to the formation of the connection. This means that the connection zones do not initially differ from the rest of the surface of the connection element and are only distinguished due to the formation of the connection in that the connection zones are the zones where the connection is formed. In this case, before the connection is formed, the connection zones differ only conceptually from the rest of the surface of the connection element. By way of example, a connection zone of a zone connection element may be prominent in that a zone connection to the respective component is formed on a demarcated area of the connection element (i.e. on the connection zone).

該等連接區較佳地與該對應的接觸區一樣大,且特別較佳地,具有其形式。然而,該等接觸區大於或小於該等對應的連接區及/或該等接觸區及該對應的連接區具有不同形式亦係可能的。 The connection areas are preferably as large as the corresponding contact areas and particularly preferably have the same form. However, it is also possible that the contact areas are larger or smaller than the corresponding connection areas and/or that the contact areas and the corresponding connection areas have different forms.

在各情況中,該等連接區較佳地為該連接元件之該表面之簡單相鄰形式之區域。作為一替代,將該第一連接區及/或該第二連接區細分成該連接元件之該表面的多個單獨子區域係可能的。一連接區可因此包含該連接元件之該表面之兩個或更多個單獨部分。 In each case, the connection regions are preferably regions of simply adjacent form of the surface of the connection element. As an alternative, it is possible to subdivide the first connection region and/or the second connection region into a plurality of separate subregions of the surface of the connection element. A connection region can thus comprise two or more separate parts of the surface of the connection element.

在步驟b)及c)中,使該等接觸區與該等連接區在一起,亦即,朝向彼此移動。結果,在該等連接區上之該等奈米線與該各別接觸區接觸。在此情況中,該等奈米線連接至該對應的接觸區,作為此結果,形成在該等組件與該連接元件之間的對應的連接。 In steps b) and c), the contact regions are brought together with the connection regions, i.e. moved towards each other. As a result, the nanowires on the connection regions come into contact with the respective contact regions. In this case, the nanowires are connected to the corresponding contact regions, as a result of which corresponding connections are formed between the components and the connection element.

形成該連接,其中該等奈米線,特別是,其面向該各別接觸區之端部,連接至該接觸區。此連接係在一原子層級形成。此利用原子能進行之操作類似於在燒結期間發生之操作。該獲得之連接對於氣體及/或液體可為密不透封的,特別是,按以下方式:在該連接之區域中可防止或至少限制該連接及/或該等連接在一起之組件之腐蝕。特別是,該形成之連接可被視為全金屬。該描述之方法亦可被稱作「KlettWelding」〔鉤環焊〕。此傳達該連接係藉由大量奈米線獲得,及因此藉由大量細長發狀結構,及藉由加熱。該等大量奈米線可補償該等 接觸區之不平度及粗糙度。 The connection is formed in which the nanowires, in particular their ends facing the respective contact area, are connected to the contact area. The connection is formed at an atomic level. The operation performed with atomic energy is similar to the operation that occurs during sintering. The connection obtained can be impermeable to gases and/or liquids, in particular in such a way that corrosion of the connection and/or the components connected together can be prevented or at least limited in the area of the connection. In particular, the connection formed can be considered as all-metal. The described method can also be referred to as "Klett Welding". The connection is obtained by a large number of nanowires, and therefore by a large number of elongated hair structures, and by heating. The large number of nanowires can compensate for the unevenness and roughness of the contact areas.

由於在奈米範圍中的該等奈米線之大小,該連接之表面(亦即,諸如範德瓦爾力之力在原子層級作用於之區)特別大。該連接可因此具有特別好之導熱率及/或機械穩定性。對於一熱特定傳導性連接,較佳地,該等奈米線自一導熱性材料形成。此處,銅之使用特別較佳。該等接觸區較佳地亦自一導熱性材料形成,特別是,用銅形成。如以上進一步描述,銅之使用並不可能,特定言之,在焊接連接之情況中。由於藉由該描述之方法獲得的該連接之大表面,該連接之導熱率特別大係可能的。該連接之特別好的導熱率可改良,例如,在該連接中涉及的該等組件之冷卻。特別是,為此目的,將銅用於該等奈米線及/或用於該等接觸區係較佳的。 Due to the size of the nanowires in the nanometer range, the surface of the connection (i.e. the area on which forces such as van der Waals forces act at the atomic level) is particularly large. The connection can therefore have a particularly good thermal conductivity and/or mechanical stability. For a thermally specific conductive connection, the nanowires are preferably formed from a thermally conductive material. The use of copper is particularly preferred here. The contact areas are preferably also formed from a thermally conductive material, in particular, from copper. As described further above, the use of copper is not possible, in particular in the case of a solder connection. Due to the large surface of the connection obtained by the described method, a particularly large thermal conductivity of the connection is possible. The particularly good thermal conductivity of the connection can improve, for example, the cooling of the components involved in the connection. In particular, for this purpose, the use of copper for the nanowires and/or for the contact areas is preferred.

該描述之連接可此外以一特別簡單方式且不藉由工具形成。僅有必要連接該等組件及使該連接元件在一起。可任擇地執行加熱及壓力之施加,但並非絕對必要。 The connection described can also be produced in a particularly simple manner and without tools. It is only necessary to connect the components and bring the connection elements together. The application of heat and pressure can be carried out optionally but is not absolutely necessary.

該等方法步驟a)至c)較佳地按所陳述之順序執行,特別是,連續地執行。特別是,步驟a)較佳地在步驟b)及c)開始前執行。 The method steps a) to c) are preferably performed in the order described, in particular, continuously. In particular, step a) is preferably performed before steps b) and c) are started.

若步驟b)及c)係連續地執行,則可一開始使該第一組件之該接觸區與該第一連接區(亦即,該第一組件及該連接元件)在一起(步驟b))。隨後,可按以下方式使按照步驟b)使之與第一組件在一起之連接元件與第二組件在一起:使該第二組件之該接觸區與該第二連接區在一起(步驟c))。 If steps b) and c) are performed consecutively, the contact area of the first component and the first connection area (i.e., the first component and the connection element) can be initially brought together (step b)). Subsequently, the connection element brought together with the first component according to step b) can be brought together with the second component in the following manner: the contact area of the second component and the second connection area are brought together (step c)).

步驟b)與c)可替代地同時、以一臨時重疊方式或連續地執行。舉例而言,此係可能的,其中將該連接元件固持於該等兩個組件之間,且同時將該等組件自兩側朝向該連接元件移動。 Steps b) and c) may alternatively be performed simultaneously, in a temporarily overlapping manner or in succession. This is possible, for example, in which the connecting element is held between the two components and the components are simultaneously moved from both sides towards the connecting element.

在該方法之一較佳實施例中,步驟b)及/或步驟c)係在室溫下執行。 In a preferred embodiment of the method, step b) and/or step c) is performed at room temperature.

在該等接觸區與該等連接區之間的描述之連接可已在室溫下形 成。在此情況中,將該等兩個組件抵靠彼此推動以便形成該連接係較佳的。較佳地,在此處使用之壓力處於在3MPa與200MPa之間的範圍中,特別是,處於在15MPa與70MPa之間的範圍中。20MPa之壓力特別較佳。 The described connection between the contact areas and the connection areas may have been formed at room temperature. In this case, it is preferred to push the two components against each other in order to form the connection. Preferably, the pressure used here is in the range between 3 MPa and 200 MPa, in particular in the range between 15 MPa and 70 MPa. A pressure of 20 MPa is particularly preferred.

較佳地,加熱亦不發生於步驟b)及c)之結束後。結果,作為溫度之作用的結果,有可能防止該等組件之損壞。 Preferably, heating also does not occur after the completion of steps b) and c). As a result, it is possible to prevent damage to the components as a result of the temperature effect.

在再一較佳實施例中,該方法此外包含:d)將至少該等接觸區加熱至至少90℃之一溫度。 In another preferred embodiment, the method further comprises: d) heating at least the contact areas to a temperature of at least 90°C.

將該等接觸區加熱至至少90℃之一溫度(作為最小溫度),較佳地,加熱至至少150℃之一溫度(作為最小溫度)。該溫度較佳地為200℃。較佳地,實行該加熱至至多450℃之一溫度,特別是,至多240℃之一溫度。在本實施例中,在室溫下執行步驟b)及/或步驟c)亦係較佳的。此意謂,該加熱僅發生在按照步驟b)及步驟c)形成連接之後。藉由該加熱,加強因此形成之該連接。 The contact areas are heated to a temperature of at least 90°C (as a minimum temperature), preferably to a temperature of at least 150°C (as a minimum temperature). The temperature is preferably 200°C. Preferably, the heating is carried out to a temperature of at most 450°C, in particular, to a temperature of at most 240°C. In this embodiment, it is also preferred to carry out step b) and/or step c) at room temperature. This means that the heating occurs only after the connection is formed according to step b) and step c). By the heating, the connection thus formed is strengthened.

按照步驟d)之該加熱以一特別令人滿意之方式將該等奈米線連接至該等接觸區。對應地,僅加熱該等接觸區係足夠的。實務上,藉由此種類之加熱,通常不可能進行關於部分抑或總體對該等接觸區、該等奈米線、該連接元件、該第一組件執行加熱及/或部分抑或總體對該第二組件執行加熱之一區分。若使用導熱性材料,則情況特別如此。對於該連接之形成,不需要除該等接觸區之外的元件之(共同)加熱,但此(共同)加熱亦不有害。可因此特別地實行按照步驟d)之加熱,其中該第一組件、該第二組件與該連接元件共同地加熱,例如,在一爐中。然而,作為一替代,亦有可能將熱量局部地引入至該連接之區域內,特別是,至該等接觸區之區域內。 The heating according to step d) connects the nanowires to the contact regions in a particularly satisfactory manner. Accordingly, it is sufficient to heat only the contact regions. In practice, with this type of heating, it is generally not possible to make a distinction as to whether the contact regions, the nanowires, the connecting element, the first component are heated partially or entirely and/or whether the second component is heated partially or entirely. This is particularly the case if thermally conductive materials are used. For the formation of the connection, (joint) heating of components other than the contact regions is not required, but this (joint) heating is also not harmful. The heating according to step d) can therefore be carried out in particular, wherein the first component, the second component and the connecting element are heated jointly, for example in a furnace. However, as an alternative, it is also possible to introduce the heat locally in the area of the connection, in particular, in the area of the contact areas.

對於該連接之形成,在一短時間週期內達到該描述之最小溫度至少一次係足夠的。無必要維持最小溫度。然而,將在步驟d)中執行加熱之溫度維持至少十秒、較佳地至少30秒係較佳的。此使確保按需要形成該連接有可能。原 則上,在更長時間內維持該溫度並不有害。 For the formation of the connection, it is sufficient to reach the described minimum temperature at least once within a short period of time. It is not necessary to maintain the minimum temperature. However, it is preferred to maintain the temperature at which the heating is carried out in step d) for at least ten seconds, preferably at least 30 seconds. This makes it possible to ensure that the connection is formed as desired. In principle, it is not harmful to maintain the temperature for a longer time.

可按一至少部分臨時重疊方式執行步驟b)與c),及亦步驟d)。舉例而言,因此有可能在步驟b)及c)前或期間進行預加熱,該預加熱能夠建構為步驟d)之部分。亦有可能按以下方式在步驟d)前加熱該第一組件及/或該第二組件之該各別接觸區:需要用於該連接之形成的該溫度已在按照步驟b)或c)之使之在一起操作期間達到。特別是,在此方面,因此亦有可能在步驟b)或c)前開始步驟d)。在彼情況中,執行步驟d),因為甚至在步驟b)或c)之結束後,按照步驟d)需要之溫度仍然至少臨時存在。 Steps b) and c) and also step d) can be performed in an at least partially temporarily overlapping manner. For example, it is thus possible to carry out preheating before or during steps b) and c), which preheating can be constructed as part of step d). It is also possible to heat the respective contact area of the first component and/or the second component before step d) in such a way that the temperature required for the formation of the connection has been reached during the operation together according to step b) or c). In particular, in this respect, it is thus also possible to start step d) before step b) or c). In that case, step d) is performed because even after the end of step b) or c), the temperature required according to step d) is still at least temporarily present.

藉由該描述之方法,有可能獲得兩個組件之間的一連接,而達不到具有諸如在例如焊接或硬焊之情況中的一量值之一溫度。在本實施例中,可利用此優勢,其中免除不必要之加熱量。以實例說明,因此可避免該等組件之損壞。作為描述之低溫之結果,亦可排除可燃材料之點燃。對應地,在該描述之方法之任一時間點,該第一組件及/或該第二組件之一溫度不超過270℃、特別是240℃特別較佳。 By means of the described method, it is possible to obtain a connection between two components without reaching a temperature having a value such as in the case of welding or brazing, for example. In the present embodiment, this advantage can be utilized, wherein unnecessary heating is avoided. By way of example, damage to the components can thus be avoided. As a result of the described low temperatures, ignition of combustible materials can also be excluded. Correspondingly, at any point in time of the described method, a temperature of the first component and/or the second component does not exceed 270° C., in particular 240° C. is particularly preferred.

在該方法之再一較佳實施例中,在步驟b)及/或c)中藉由超音作用於該連接元件、該第一組件及/或該第二組件。 In another preferred embodiment of the method, in step b) and/or c), the connecting element, the first component and/or the second component are acted on by ultrasound.

該連接元件及該第一組件在步驟b)中藉由超音作用係較佳的。作為一替代或此外,該連接元件及該第二組件在步驟c)中藉由超音作用係較佳的。藉由超音作用可按以下方式執行:進行關於是否作用於該連接元件、該第一組件及/或該第二組件之區分完全不可能或極少可能。對應地,在步驟b)中及/或在步驟c)中藉由超音作用於該連接元件、該第一組件及該第二組件亦係較佳的。 The connecting element and the first component are preferably subjected to ultrasound in step b). As an alternative or in addition, the connecting element and the second component are preferably subjected to ultrasound in step c). The ultrasound can be performed in such a way that it is completely impossible or only very unlikely to distinguish whether the connecting element, the first component and/or the second component are acted upon. Correspondingly, it is also preferred to act upon the connecting element, the first component and the second component by ultrasound in step b) and/or in step c).

已發現,超音有助於在該等奈米線與該等接觸區之間形成該連接。 It has been found that ultrasound helps to form the connection between the nanowires and the contact areas.

在該方法之再一較佳實施例中,至少在加熱之一部分期間,藉由至少3MPa、特別是至少15MPa及/或至多200MPa、特別是70MPa之一壓力將該 第一組件及該第二組件抵靠該連接元件推動。此可特別是在以下情形中實行:將該等兩個組件朝向彼此推動,同時將該連接元件配置於該等兩個組件之間。 In a further preferred embodiment of the method, at least during a part of the heating, the first component and the second component are pushed against the connecting element by a pressure of at least 3 MPa, in particular at least 15 MPa and/or at most 200 MPa, in particular 70 MPa. This can be implemented in particular in the following situation: the two components are pushed towards each other while the connecting element is arranged between the two components.

較佳地,使用之壓力處於在3MPa與200MPa之間的範圍中,特別是,處於在15MPa與70MPa之間的範圍中。20MPa之壓力特別較佳。 Preferably, the pressure used is in the range between 3 MPa and 200 MPa, in particular, in the range between 15 MPa and 70 MPa. A pressure of 20 MPa is particularly preferred.

至少在溫度超過其指定下限之一時間週期中,該壓力較佳地高於指示之下限。在此方面,至少在該時間週期中,該等奈米線及該接觸區因此皆曝露於一對應的壓力,且曝露於一對應的溫度。結果,該連接可藉由壓力及溫度之作用而形成。 At least during a time period in which the temperature exceeds its specified lower limit, the pressure is preferably above the indicated lower limit. In this respect, at least during this time period, the nanowires and the contact area are therefore both exposed to a corresponding pressure and to a corresponding temperature. As a result, the connection can be formed by the action of pressure and temperature.

在該方法之再一較佳實施例中,該第一連接區及該第二連接區按一相互相對方式組配。 In another preferred embodiment of the method, the first connection area and the second connection area are assembled in a relative manner.

該第一連接區與該第二連接區較佳地相互平行地配置。 The first connection area and the second connection area are preferably arranged parallel to each other.

在本實施例中,該連接元件可配置於待連接之兩個組件之間。在此情況中,(除了該連接之形成之外)連接元件僅具有以下效應:該等接觸區並不直接相互鄰近地配置,而是特別地按該連接元件之材料厚度相互間隔開。該等接觸區相對於彼此之一定向保持不受該連接元件影響。 In this embodiment, the connecting element can be arranged between the two components to be connected. In this case, the connecting element has only the following effect (apart from the formation of the connection): the contact areas are not arranged directly adjacent to each other, but are spaced apart from each other in particular according to the material thickness of the connecting element. The orientation of the contact areas relative to each other remains unaffected by the connecting element.

作為一替代,舉例而言,將該第一連接區及該第二連接區亦提供於該連接元件之各別(特別是,平坦)表面之不同位置係可能的。在彼情況中,該第一組件可在該等位置中之一第一者處連接至該連接元件,且該第二組件可在該等位置中之一第二者處連接至該連接元件。在該方法之再一較佳實施例中,在步驟a)中提供之該連接元件亦具有在該連接元件之第一側上的一第三連接區上及在該連接元件之第二側上的一第四連接區上之各別大量奈米線,其中該第三連接區與該第四連接區以一導電方式相互連接,且其中該方法亦包含下列步驟:b')使一第三組件之一接觸區與該連接元件之該第三連接區在一起,以及c')使一第四組件之一接觸區與該連接元件之該第四連接區在一起。 As an alternative, it is possible, for example, to provide the first connection area and the second connection area also at different positions of the respective (in particular, flat) surface of the connection element. In that case, the first component can be connected to the connection element at a first of the positions and the second component can be connected to the connection element at a second of the positions. In another preferred embodiment of the method, the connection element provided in step a) also has a plurality of nanowires on a third connection region on the first side of the connection element and on a fourth connection region on the second side of the connection element, wherein the third connection region and the fourth connection region are connected to each other in a conductive manner, and wherein the method also includes the following steps: b') bringing a contact region of a third component together with the third connection region of the connection element, and c') bringing a contact region of a fourth component together with the fourth connection region of the connection element.

在此實施例中,該方法亦可被稱作「用於連接四個組件之方法」。 In this embodiment, the method may also be referred to as a "method for connecting four components."

步驟b)、b')、c)與c')可同時、以一臨時重疊方式或連續地按任一所要的順序執行。 Steps b), b'), c) and c') may be performed simultaneously, in a temporarily overlapping manner or continuously in any desired order.

在此實施例中,形成在該第一組件與該第二組件之間的一電氣絕緣連接,及亦在該第三組件與該第四組件之間的一導電連接。在此方面,提供在各情況中的一第一組件與一第二組件之多個對,及/或一第三組件與一第四組件之多個對。 In this embodiment, an electrically insulating connection is formed between the first component and the second component, and also an electrically conductive connection is formed between the third component and the fourth component. In this regard, multiple pairs of a first component and a second component, and/or multiple pairs of a third component and a fourth component are provided in each case.

該第一連接區較佳地以一導電方式與所有其他連接區絕緣。該第二連接區較佳地以一導電方式與所有其他連接區絕緣。 The first connection region is preferably insulated from all other connection regions in a conductive manner. The second connection region is preferably insulated from all other connection regions in a conductive manner.

除非另有指示,否則以上針對第一組件及第二組件陳述之內容對應地適用於第三組件及第四組件,且以上針對第一連接區及第二連接區陳述之內容對應地適用於第三連接區及第四連接區。 Unless otherwise indicated, the contents stated above for the first component and the second component apply to the third component and the fourth component accordingly, and the contents stated above for the first connection area and the second connection area apply to the third connection area and the fourth connection area accordingly.

本實施例可用以例如以一電氣絕緣方式將作為第一組件的諸如MOSFET或IGBT之一電晶體連接至作為第二組件之一冷卻主體,及將作為第三組件之一微控制器連接至作為第四組件之一資料線。 This embodiment can be used, for example, to connect a transistor such as a MOSFET or an IGBT as a first component to a cooling body as a second component in an electrically insulating manner, and to connect a microcontroller as a third component to a data line as a fourth component.

在各情況中,該第三連接區及該第四連接區較佳地為該連接元件之該表面之簡單相鄰形式之區域。作為一替代,將該第三連接區及/或該第四連接區細分成該連接元件之該表面的多個單獨子區域係可能的。一連接區可因此包含該連接元件之該表面之兩個或更多個單獨部分。結果,例如,經由大量連接將作為第三組件之一微控制器附接至作為第四組件之一多極資料線係可能。 In each case, the third connection region and the fourth connection region are preferably regions of simply adjacent form of the surface of the connection element. As an alternative, it is possible to subdivide the third connection region and/or the fourth connection region into a plurality of separate subregions of the surface of the connection element. A connection region can thus comprise two or more separate parts of the surface of the connection element. As a result, it is possible, for example, to attach a microcontroller as a third component to a multipolar data line as a fourth component via a large number of connections.

該第一連接區與該第三連接區較佳地在該連接元件之該第一表面上相互間隔開配置。該第二連接區與該第四連接區較佳地在該連接元件之該第二表面上相互間隔開配置。該第一連接區較佳地與該第二連接區相對地坐落。該第三連接區較佳地與該第四連接區相對地坐落。 The first connection area and the third connection area are preferably arranged spaced apart from each other on the first surface of the connection element. The second connection area and the fourth connection area are preferably arranged spaced apart from each other on the second surface of the connection element. The first connection area is preferably located opposite to the second connection area. The third connection area is preferably located opposite to the fourth connection area.

原則上,該連接元件較佳地自電氣絕緣材料形成。在此方面,在該第三連接區與該第四連接區之間的該導電連接可藉由一或多個連接線實現,該一或多個連接線穿過在該第三連接區與該第四連接區之區域中的該連接元件。該等連接線可自例如銅形成。其可藉由微影方式獲得。 In principle, the connection element is preferably formed from an electrically insulating material. In this respect, the conductive connection between the third connection area and the fourth connection area can be realized by one or more connection lines, which pass through the connection element in the region of the third connection area and the fourth connection area. The connection lines can be formed from copper, for example. They can be obtained by lithography.

作為本發明之再一態樣提出的為一種用於將一第一組件連接至一第二組件之連接元件。該連接元件具有在該連接元件之一第一側上的一第一連接區上及在該連接元件之與該第一側相對的一第二側上的一第二連接區上之大量各別奈米線。該第一連接區與該第二連接區相互電氣絕緣。 As another aspect of the present invention, a connecting element for connecting a first component to a second component is proposed. The connecting element has a large number of individual nanowires on a first connecting region on a first side of the connecting element and on a second connecting region on a second side of the connecting element opposite to the first side. The first connecting region and the second connecting region are electrically insulated from each other.

以上進一步描述的方法之特定優勢及設計特徵可適用於且可轉移至該描述之連接元件,且反之亦然。 Certain advantages and design features of the method described further above are applicable and transferable to the connection element described therein, and vice versa.

在一較佳實施例中,該連接元件具有薄膜狀組態。 In a preferred embodiment, the connecting element has a film-like configuration.

將薄膜狀組態理解為意謂該連接元件具有該連接元件在其他方向上之延展更小得多之一厚度。在一較佳實施例中,該連接元件具有至多5mm之一厚度。較佳地,該連接元件之該厚度處於0.005mm與5mm[毫米]之範圍中,特別是處於0.01mm與1mm之範圍中。 A film-like configuration is understood to mean that the connecting element has a thickness with a much smaller extension of the connecting element in other directions. In a preferred embodiment, the connecting element has a thickness of at most 5 mm. Preferably, the thickness of the connecting element is in the range of 0.005 mm and 5 mm [millimeters], in particular in the range of 0.01 mm and 1 mm.

此外,較佳地,該連接元件具有條狀組態。在此實施例中,該連接元件的第一側及處於與其相對位置之第二側係該條帶之兩個表面,該等兩個表面相對於所有其他表面(由於該條帶之材料厚度而產生)具有一相當大之表面積。 Furthermore, preferably, the connecting element has a strip-shaped configuration. In this embodiment, the first side of the connecting element and the second side opposite thereto are two surfaces of the strip, which have a relatively large surface area relative to all other surfaces (due to the material thickness of the strip).

該條帶材料可例如按卷狀物之形式提供。在此情況中,該等奈米線可已提供於該條帶材料站,且可例如受到一保護性漆保護。在使用該連接元件前,該保護性漆可移除,且因此暴露奈米線。該條帶材料之一各別所需部分可與該卷狀物分開,以便加以使用。 The strip material can be provided, for example, in the form of a roll. In this case, the nanowires can already be provided at the strip material station and can, for example, be protected by a protective lacquer. Before using the connecting element, the protective lacquer can be removed and the nanowires can thus be exposed. A respectively desired portion of the strip material can be separated from the roll in order to be used.

在本實施例中,該連接元件亦可被稱作「連接帶」,且特別是, 被稱作「KlettWelding帶」〔鉤環焊帶〕。 In this embodiment, the connecting element may also be referred to as a "connecting belt", and in particular, is referred to as a "Klett Welding belt".

在該連接元件之再一較佳實施例中,在該第一連接區與該第二連接區之間的區域中的該連接元件之材料之一比電阻在室溫下為至少105Ωm,較佳地至少108Ωm。 In a further preferred embodiment of the connection element, the material of the connection element in the region between the first connection region and the second connection region has a specific resistance of at least 10 5 Ωm, preferably at least 10 8 Ωm at room temperature.

在本實施例中,至少在該第一連接區與該第二連接區之間的該區域中的該連接元件之該材料之該比電阻在室溫下為至少105Ωm,特別是至少108Ωm。然而,較佳地,亦有以下情況:在此區域外,特定言之,較佳地,貫穿該連接元件之所有點,該連接元件之該比電阻為至少105Ωm,特別是至少108Ωm。 In the present embodiment, the specific electrical resistance of the material of the connection element at least in the region between the first connection region and the second connection region is at least 10 5 Ωm, in particular at least 10 8 Ωm at room temperature. However, it is also preferably the case that outside this region, in particular, preferably, through all points of the connection element, the specific electrical resistance of the connection element is at least 10 5 Ωm, in particular at least 10 8 Ωm.

針對該連接元件之該材料之該比電阻描述的規格係關於在恆定電壓下之一量測。當施加一交流電壓時,可獲得可特別取決於該交流電壓之頻率的變化結果。 The specification describing the specific resistance of the material of the connection element relates to a measurement at a constant voltage. When an alternating voltage is applied, varying results are obtained which depend in particular on the frequency of the alternating voltage.

至少105Ωm、較佳地至少108Ωm之所陳述值係關於該連接元件之材料。廣泛多種材料之比電阻可在專家文獻中獲得,例如,以表格獲得。此處對此種類之規格進行參考。若該連接元件全部係自一特定材料形成,則該連接元件之該材料的待在此處使用之該比電阻為專家文獻中針對該特定材料指定之值。此定義意謂排除不由材料而是相反地例如由連接元件之形式產生的所有效應。若該連接元件由不同材料構成,則該等個別材料之該比電阻可自專家文獻確定,且可確定該連接元件之材料之總比電阻,亦即,該等材料之構成。若在專家文獻中未發現材料之比電阻之值,則該值可藉由量測確定。 The stated values of at least 10 5 Ωm, preferably at least 10 8 Ωm, relate to the material of the connecting element. The specific resistances of a wide variety of materials can be found in the expert literature, for example, in tables. Reference is made here to specifications of this kind. If the connecting element is formed entirely from a specific material, the specific resistance of the material of the connecting element to be used here is the value specified in the expert literature for this specific material. This definition is meant to exclude all effects which are not caused by the material but rather by, for example, the form of the connecting element. If the connecting element consists of different materials, the specific resistances of the individual materials can be determined from the expert literature and the total specific resistance of the material of the connecting element, i.e. the composition of these materials, can be determined. If the value of the specific resistivity of a material is not found in the specialist literature, it can be determined by measurement.

特別是,在於本實施例中給出的比電阻之情況中,意圖將考慮如所給出之該等連接區之間的一電氣絕緣。 In particular, in the case of the specific resistances given in the present embodiment, it is intended to take into account an electrical insulation between the connection areas as given.

在再一較佳實施例中,該連接元件係自一陶瓷材料形成於該第一連接區與該第二連接區之間的區域中。 In another preferred embodiment, the connecting element is formed from a ceramic material in the area between the first connecting area and the second connecting area.

在本實施例中,該連接元件係自一陶瓷材料形成於至少在該第一 連接區與該第二連接區之間的區域中。然而,較佳地,在此區域外,特定言之,較佳地,貫穿該連接元件之所有點,該連接元件亦自一陶瓷材料形成。 In the present embodiment, the connection element is formed from a ceramic material at least in the region between the first connection region and the second connection region. However, preferably, outside this region, in particular, preferably, throughout all points of the connection element, the connection element is also formed from a ceramic material.

特別是,自一陶瓷材料形成之一連接元件可具有所描述之比電阻。 In particular, a connecting element formed from a ceramic material can have the described specific resistance.

在再一較佳實施例中,該連接元件至少部分導熱。 In another preferred embodiment, the connecting element is at least partially thermally conductive.

特別是,在此實施例中,形成之連接可具有一特定良好導熱率。 In particular, in this embodiment, the connection formed can have a particularly good thermal conductivity.

在再一較佳實施例中,該連接元件具有在該連接元件之第一側上的一第三連接區上及在該連接元件之第二側上的一第四連接區上之各別大量奈米線,其中該第三連接區與該第四連接區以一導電方式相互連接。 In another preferred embodiment, the connection element has a plurality of nanowires on a third connection region on the first side of the connection element and on a fourth connection region on the second side of the connection element, respectively, wherein the third connection region and the fourth connection region are connected to each other in a conductive manner.

作為本發明之再一態樣提出的為一種配置,包含:-一第一組件,其藉由在一連接元件之一第一側上之一第一連接區上的大量奈米線連接至該連接元件,以及-一第二組件,其藉由在該連接元件之與該第一側相對的一第二側上之一第二連接區上的大量奈米線連接至該連接元件。 As another aspect of the present invention, a configuration is proposed, comprising: - a first component connected to a connection element via a plurality of nanowires on a first connection region on a first side of the connection element, and - a second component connected to the connection element via a plurality of nanowires on a second connection region on a second side of the connection element opposite to the first side.

該第一連接區與該第二連接區相互電氣絕緣。 The first connection area and the second connection area are electrically insulated from each other.

以上進一步描述的方法及連接元件之特定優勢及設計特徵可適用於且可轉移至該描述之配置。該連接元件較佳地如所描述來組配。 The specific advantages and design features of the method and connection element described further above are applicable and transferable to the described configuration. The connection element is preferably assembled as described.

該配置較佳地藉由該描述之方法來產生。 The configuration is preferably produced by the method described.

作為一替代,較佳地,該配置藉由包含以下步驟之一方法生產:A)提供一連接元件,該連接元件具有在該連接元件之一第一側上的一第一連接區及在該連接元件之與該第一側相對的一第二側上的一第二連接區,其中該第一連接區與該第二連接區相互電氣絕緣,B)提供在該第一組件之一接觸區上及在該第二組件之一接觸區上的大量各別奈米線,C)使該第一組件之該接觸區與該連接元件之該第一連接區在一起,以及 D)使該第二組件之該接觸區與該連接元件之該第二連接區在一起。 As an alternative, preferably, the arrangement is produced by a method comprising the following steps: A) providing a connection element having a first connection region on a first side of the connection element and a second connection region on a second side of the connection element opposite to the first side, wherein the first connection region and the second connection region are electrically insulated from each other, B) providing a plurality of individual nanowires on a contact region of the first component and on a contact region of the second component, C) bringing the contact region of the first component together with the first connection region of the connection element, and D) bringing the contact region of the second component together with the second connection region of the connection element.

此方法因而亦作為本發明之一態樣提出。以上進一步描述之特定優勢及設計特徵可適用於且可轉移至此方法,且反之亦然。 This method is therefore also proposed as an aspect of the present invention. The specific advantages and design features further described above are applicable and transferable to this method, and vice versa.

在此方法中,奈米線未提供於連接元件上,而相反地,提供於第一組件上及第二組件上。此具有該連接元件之生產特別簡單之優勢。 In this method, the nanowires are not provided on the connecting element, but rather on the first component and on the second component. This has the advantage that the production of the connecting element is particularly simple.

作為再一替代,較佳地,該配置藉由包含以下步驟之一方法生產:i)提供一連接元件,該連接元件具有在該連接元件之一第一側上的一第一連接區上及在該連接元件之與該第一側相對的一第二側上的一第二連接區上之大量奈米線,其中該第一連接區與該第二連接區相互電氣絕緣,ii)在該第二組件之一接觸區上提供大量奈米線,iii)使該第一組件之該接觸區與該連接元件之該第一連接區在一起,以及iv)使該第二組件之該接觸區與該連接元件之該第二連接區在一起。 As a further alternative, preferably, the arrangement is produced by a method comprising the following steps: i) providing a connection element having a plurality of nanowires on a first connection region on a first side of the connection element and on a second connection region on a second side of the connection element opposite to the first side, wherein the first connection region and the second connection region are electrically insulated from each other, ii) providing a plurality of nanowires on a contact region of the second component, iii) bringing the contact region of the first component together with the first connection region of the connection element, and iv) bringing the contact region of the second component together with the second connection region of the connection element.

此方法因而亦作為本發明之一態樣提出。以上進一步描述之特定優勢及設計特徵可適用於且可轉移至此方法,且反之亦然。 This method is therefore also proposed as an aspect of the present invention. The specific advantages and design features further described above are applicable and transferable to this method, and vice versa.

在此方法中,針對該連接元件上的該等連接中之一者及針對該組件上的該等連接中之另一者提供奈米線。 In the method, a nanowire is provided for one of the connections on the connection element and for another of the connections on the component.

總之,因此有可能在一連接中涉及的組件之接觸區上或在對應的接觸區上提供奈米線。對應地,存在以下可能性:在連接元件之兩個連接區上提供奈米線(如在包含步驟a)至c)之方法中的情況),在兩個組件之接觸區上提供奈米線(如在包含步驟A)至D)之方法中的情況),或在連接元件之接觸區中之一者上及該等組件之一接觸上提供奈米線(如在包含步驟i)至iv)之方法中的情況)。在所有方法中亦較佳地,在一連接區上且在相關聯之接觸區上皆提供奈米線。在此情況中,該連接形成於奈米線之間。 In summary, it is thus possible to provide the nanowire on a contact area of a component involved in a connection or on a corresponding contact area. Correspondingly, there is the possibility of providing the nanowire on two contact areas of a connection element (as in the case of a method comprising steps a) to c), on contact areas of two components (as in the case of a method comprising steps A) to D), or on one of the contact areas of a connection element and on one contact of the components (as in the case of a method comprising steps i) to iv). In all methods, it is also preferred to provide the nanowire on a connection area and on the associated contact areas. In this case, the connection is formed between the nanowires.

作為本發明之再一態樣提出的為一種配置,包含: -一第一組件,-一功能元件,-一第二組件,-一第一連接元件,以及-一第二連接元件,其中該第一組件經由大量奈米線連接至該第一連接元件之一第一連接區,其中該功能元件在一第一側上經由大量奈米線連接至該第一連接元件之一第二連接區,且在一第二側上經由大量奈米線連接至該第二連接元件之一第一連接區,其中該第二組件經由大量奈米線連接至該第二連接元件之一第二連接區,其中該第一連接元件之該第一連接區與該第二連接區相互電氣絕緣,且其中該第二連接元件之該第一連接區與該第二連接區相互電氣絕緣。 As another aspect of the present invention, a configuration is proposed, comprising: - a first component, - a functional element, - a second component, - a first connecting element, and - a second connecting element, wherein the first component is connected to a first connecting region of the first connecting element via a large number of nanowires, wherein the functional element is connected to a second connecting region of the first connecting element via a large number of nanowires on a first side, and is connected to a first connecting region of the second connecting element via a large number of nanowires on a second side, wherein the second component is connected to a second connecting region of the second connecting element via a large number of nanowires, wherein the first connecting region and the second connecting region of the first connecting element are electrically insulated from each other, and wherein the first connecting region and the second connecting region of the second connecting element are electrically insulated from each other.

以上進一步描述的方法、連接元件及上述配置之特定優勢及設計特徵可適用於且可轉移至目前描述之配置。該配置較佳地藉由將該描述之方法應用兩次來產生。該等兩個連接元件較佳地如所描述來形成。 The specific advantages and design features of the method, connecting elements and the above-described configuration further described above are applicable and transferable to the configuration described herein. The configuration is preferably produced by applying the described method twice. The two connecting elements are preferably formed as described.

該功能元件可特別是一電子器具之一功能層之部分。該功能元件較佳地滿足以下功能中之一或多者:熱消散、減震、機械穩定。該功能元件可例如自紡織品形成。該功能元件亦可為一外殼之部分。 The functional element may in particular be part of a functional layer of an electronic device. The functional element preferably fulfills one or more of the following functions: heat dissipation, vibration reduction, mechanical stability. The functional element may, for example, be formed from a textile. The functional element may also be part of a housing.

作為本發明之再一態樣提出的為一種用於將一第一接觸區連接至一第二接觸區之方法。該方法包含:a)提供在一第一連接區上及在一第二連接區上具有大量奈米線之一連接元件,其中該第一連接區及該第二連接區配置於該連接元件之同一側上,b)使該第一接觸區與該連接元件之該第一連接區在一起,以及c)使該第二接觸區與該連接元件之該第二連接區在一起。 As another aspect of the present invention, a method for connecting a first contact region to a second contact region is proposed. The method comprises: a) providing a connection element having a large number of nanowires on a first connection region and on a second connection region, wherein the first connection region and the second connection region are arranged on the same side of the connection element, b) bringing the first contact region together with the first connection region of the connection element, and c) bringing the second contact region together with the second connection region of the connection element.

該描述之方法使在該等兩個接觸區之間形成一連接有可能。該第 一接觸區與該第二接觸區可配置於同一組件上或不同組件上。該一個組件或該等兩個組件可分別特別是一電子組件或兩個電子組件,諸如,半導體元件、電腦晶片、微處理器或印刷電路板。該組件或該等組件較佳地至少部分導電及/或導熱。 The method described makes it possible to form a connection between the two contact areas. The first contact area and the second contact area can be arranged on the same component or on different components. The one component or the two components can be in particular an electronic component or two electronic components, such as semiconductor elements, computer chips, microprocessors or printed circuit boards. The component or components are preferably at least partially electrically and/or thermally conductive.

在此處使用之意義中的導電率及/或導熱率特別存在於諸如銅之金屬中,該等金屬通常被稱作「導電性」或等效地稱作「導電」或「導熱性」或「導熱」。特別是,通常視為電氣及/或熱絕緣之材料在此處並不意欲被考慮為導電性及/或導熱性。 Electrical conductivity and/or thermal conductivity in the sense used here is particularly present in metals such as copper, which are usually referred to as "conductive" or equivalently as "electrically conductive" or "thermally conductive" or "thermally conductive". In particular, materials that are usually regarded as electrically and/or thermally insulating are not intended to be considered as electrically and/or thermally conductive here.

然而,該描述之方法不限於在電子器件之領域中的應用。藉由描述之方法,在該第一接觸區與該第二接觸區之間形成一機械穩定且導電及/或導熱性連接特別有可能。因此,該描述之方法可用於兩個接觸區之間的具有此等性質中之一或多者的一連接係必要之所有領域中。該描述之方法亦不限於該等組件之某一大小。該描述之方法因此適合於例如在(微)電子學之領域中的應用,或適合於在巨觀級別上的相當較大接觸區之連接。 However, the described method is not limited to applications in the field of electronic devices. By means of the described method, it is particularly possible to form a mechanically stable and electrically and/or thermally conductive connection between the first contact area and the second contact area. The described method can therefore be used in all fields in which a connection between two contact areas having one or more of these properties is necessary. The described method is also not limited to a certain size of the components. The described method is therefore suitable, for example, for applications in the field of (micro)electronics or for the connection of relatively large contact areas on a macroscopic level.

一接觸區特別為一組件之一表面之一空間上顯著的區域。特別是,該等接觸區因該連接之形成而顯著係較佳的。此意謂該等連接區一開始並不與該組件之該表面之其餘處不同(如下所描述,各別其他接觸區例外),且僅因該連接之形成而有區分,在於該等連接區係形成該連接所在之區。在此情況中,該等接觸區在概念上(亦即,無空間不同)與該組件之該表面之該其餘處有所差異。以實例說明,一區電氣導體之一接觸區可為顯著的,在於,至一第二電氣導體之一區連接形成於該區導體之一劃定區上(亦即,在該接觸區上)。在各情況中,該等接觸區較佳地為同一組件或一各別組件之該表面之簡單相鄰形式之區域。作為一替代,將該第一接觸區及/或該第二接觸區細分成該一個組件及/或該各別組件之該表面的多個單獨子區域係可能的。一接觸區可因此包含該表面之兩個或更 多個單獨部分。 A contact area is in particular a spatially distinct area of a surface of a component. In particular, it is preferred that the contact areas are distinguished by the formation of the connection. This means that the connection areas are not initially different from the rest of the surface of the component (with the exception of individual other contact areas, as described below) and are only distinguished by the formation of the connection in that the connection areas are the areas where the connection is formed. In this case, the contact areas differ conceptually (i.e. not spatially different) from the rest of the surface of the component. By way of example, a contact area of an electrical conductor may be distinguished in that a connection to a second electrical conductor is formed on a demarcated area of the conductor (i.e. on the contact area). In each case, the contact areas are preferably areas of simply adjacent form of the surface of the same component or of a separate component. As an alternative, it is possible to subdivide the first contact area and/or the second contact area into a plurality of separate subareas of the surface of the one component and/or of the separate component. A contact area may thus comprise two or more separate parts of the surface.

待連接之該等兩個接觸區在連接形成前已可相互區分。若具備奈米線之一連接區因此連接至一接觸區,則此不能被理解為兩個接觸區之連接,因為該一個接觸區經任意地及在概念上細分成兩個接觸區。待藉由該描述之方法連接的兩個接觸區較佳地在功能上可相互區分。若使由多個子區域組成之一接觸區與一連接區之奈米線接觸,則該連接因此亦不可能被看作兩個接觸區之一連接,其限制性條件為,該接觸區之該等個別子區域皆滿足相同功能。特別是,將一電氣接觸考慮為一功能。待藉由該描述之方法連接的兩個接觸區較佳地相互電氣絕緣。藉由該連接元件形成該連接使產生該等接觸區之間的一電氣連接有可能。該等接觸區可為導電性及/或導熱性,或電氣絕緣及/或熱絕緣。較佳地,該等接觸區導電及/或導熱,使得可形成一導電性及/或導熱性連接。 The two contact areas to be connected can already be distinguished from each other before the connection is formed. If a connection area with a nanowire is thus connected to a contact area, this cannot be understood as a connection of two contact areas, because the one contact area is arbitrarily and conceptually subdivided into two contact areas. The two contact areas to be connected by the described method are preferably functionally distinguishable from each other. If a contact area consisting of multiple subareas is brought into contact with a nanowire of a connection area, the connection cannot therefore be regarded as a connection of one of the two contact areas, with the restrictive condition that the individual subareas of the contact area all fulfill the same function. In particular, an electrical contact is considered to be a function. The two contact areas to be connected by the described method are preferably electrically insulated from each other. Forming the connection by means of the connecting element makes it possible to produce an electrical connection between the contact areas. The contact areas may be electrically and/or thermally conductive, or electrically and/or thermally insulating. Preferably, the contact areas are electrically and/or thermally conductive, so that an electrically and/or thermally conductive connection can be formed.

該等接觸區較佳地具有剛性設計。此意謂,該接觸區所位於的該各別組件之該表面至少在該接觸區之區域中具有剛性組態。該等接觸區因此不可撓。有可能根據該描述之方法以一特別令人滿意之方式在剛性接觸區之間形成一連接。若例如該等接觸區中之一者將具有可撓性設計,則該連接可能由於該等奈米線之一負載而破壞。然而,取決於精確情況,有利地藉由可撓性接觸區來實施該描述之方法亦係可能的。 The contact regions preferably have a rigid design. This means that the surface of the respective component on which the contact region is located has a rigid configuration at least in the region of the contact region. The contact regions are therefore inflexible. It is possible to form a connection between rigid contact regions in a particularly satisfactory manner according to the described method. If, for example, one of the contact regions were to have a flexible design, the connection could be destroyed by a loading of the nanowires. However, depending on the precise circumstances, it is also possible to advantageously implement the described method by means of flexible contact regions.

在該描述之方法中,經由大量奈米線形成該等第一接觸區與該第二接觸區之間的該連接。 In the described method, the connection between the first contact areas and the second contact area is formed via a plurality of nanowires.

此處,奈米線應理解為意謂具有線狀形式及在自數奈米至數微米之範圍中的一大小之任何材料主體。奈米線可例如具有一圓形、橢圓形或多邊形基面。特別是,奈米線可具有一六邊形基面。較佳地,該連接中涉及之所有該等奈米線自相同材料形成。該等奈米線完全自一導電性及/或導熱性材料形成特別較佳。 Here, nanowires are understood to mean any material body having a linear form and a size in the range from a few nanometers to a few micrometers. A nanowire may, for example, have a circular, elliptical or polygonal base. In particular, a nanowire may have a hexagonal base. Preferably, all of the nanowires involved in the connection are formed from the same material. It is particularly preferred that the nanowires are formed completely from an electrically and/or thermally conductive material.

在該第一連接區上之該等奈米線較佳地自與在該第二連接區上之該等奈米線相同的材料形成。作為一替代,較佳地,在該第一連接區上之該等奈米線與在該第二連接區上之該等奈米線自不同材料形成。 The nanowires on the first connection region are preferably formed from the same material as the nanowires on the second connection region. Alternatively, the nanowires on the first connection region and the nanowires on the second connection region are preferably formed from different materials.

特別較佳地,在該第一連接區上之該等奈米線及/或在該第二連接區上之該等奈米線自一各別金屬形成。進一步較佳地,在該第一連接區上之該等奈米線自該第一接觸區之材料形成,及/或在該第二連接區上之該等奈米線自該第二接觸區之材料形成。 Particularly preferably, the nanowires on the first connection region and/or the nanowires on the second connection region are formed from a respective metal. Further preferably, the nanowires on the first connection region are formed from the material of the first contact region, and/or the nanowires on the second connection region are formed from the material of the second contact region.

取決於該等奈米線之材料,該連接可具有不同性質。特別是,該連接之機械強度及導電率及/或導熱率受到該等奈米線之材料影響。作為在該等兩個連接區上之該等奈米線自不同材料形成之事實之結果,有可能形成具有不同性質之兩個連接。該連接元件可因此亦被視為待連接之該等兩個接觸區之間的一促進器,此係因為將另外不可相互連接或將僅可困難地連接之兩個接觸區可經由該連接元件相互連接。 Depending on the material of the nanowires, the connection can have different properties. In particular, the mechanical strength and the electrical and/or thermal conductivity of the connection are influenced by the material of the nanowires. As a result of the fact that the nanowires on the two connection areas are formed from different materials, it is possible to form two connections with different properties. The connection element can therefore also be regarded as a promoter between the two contact areas to be connected, since two contact areas that would otherwise not be connectable to one another or would only be connectable with difficulty can be connected to one another via the connection element.

該等奈米線較佳地具有在自100nm[奈米]至100μm[微米]之範圍中、特別是在自500nm至60μm之範圍中的一長度。此外,該等奈米線較佳地具有在自10nm至10μm之範圍中、特別是在自30nm至2μm之範圍中的一直徑。此處,術語「直接」係關於一圓基面,其中,在與此圓基面偏離之一基面之情況中,將考慮類似之直徑定義。特別較佳地,所有使用之奈米線具有相同長度及相同直徑。 The nanowires preferably have a length in the range from 100 nm [nanometer] to 100 μm [micrometer], in particular in the range from 500 nm to 60 μm. Furthermore, the nanowires preferably have a diameter in the range from 10 nm to 10 μm, in particular in the range from 30 nm to 2 μm. Here, the term "directly" refers to a circular base surface, wherein in the case of a base surface deviating from this circular base surface, a similar definition of diameter is considered. Particularly preferably, all nanowires used have the same length and the same diameter.

在目前描述之方法中,該等接觸區經由該連接元件間接地相互連接。此具有以下優勢:奈米線並不需要提供於該等接觸區中之任一者上。該等奈米線存在於該連接元件上係足夠的。此可使該方法之執行更容易,且特別是,亦拓寬該方法對不可接取或僅可困難地接取以用於奈米線之生長的彼等接觸區之應用領域。該等奈米線之生長亦可與該等接觸區分開來局部地實行。然而,替代 較佳地,大量各別奈米線亦提供於該第一接觸區上及/或該第二接觸區上。 In the method currently described, the contact areas are indirectly connected to one another via the connecting element. This has the advantage that the nanowires do not need to be provided on any of the contact areas. It is sufficient that the nanowires are present on the connecting element. This makes the execution of the method easier and, in particular, also broadens the field of application of the method to those contact areas which are inaccessible or only accessible with difficulty for the growth of nanowires. The growth of the nanowires can also be carried out locally, separate from the contact areas. However, alternatively preferably, a large number of individual nanowires are also provided on the first contact area and/or on the second contact area.

該連接元件較佳地具有可撓性組態。作為一替代,較佳地,該連接元件具有剛性組態。該連接元件可因此例如按一實心小金屬板之形式組配。 The connecting element preferably has a flexible configuration. As an alternative, the connecting element preferably has a rigid configuration. The connecting element can thus be assembled, for example, in the form of a solid small metal plate.

較佳地,該連接元件自一塑膠形成。以實例說明,該連接元件可自一聚合物形成,特別是,自聚碳酸酯、PVC、聚酯、聚乙烯、聚醯胺及/或PET。該連接元件例如自一陶瓷材料、矽、氧化鋁或玻璃形成亦係可能的。此外,該連接元件可自不銹鋼、鋁或非鐵金屬形成。該連接元件自包含提到之材料中之若干種之複合材料形成亦係較佳的。 Preferably, the connecting element is formed from a plastic. By way of example, the connecting element can be formed from a polymer, in particular, from polycarbonate, PVC, polyester, polyethylene, polyamide and/or PET. It is also possible that the connecting element is formed, for example, from a ceramic material, silicon, alumina or glass. Furthermore, the connecting element can be formed from stainless steel, aluminum or non-ferrous metal. It is also preferred that the connecting element is formed from a composite material comprising several of the materials mentioned.

在步驟a)中,提供一連接元件,其具有兩個連接區。該等兩個連接區各具有大量奈米線。該第一連接區與該第二連接區配置於該連接元件之同一側上。此意謂,該等兩個連接區相互緊靠。該等連接區可相互觸碰,亦即,相互合併。作為一替代,該等連接區可相互間隔開地形成。該描述之方法因此特別使連接相互緊靠之接觸區有可能。該等接觸區可相互觸碰。然而,該等兩個接觸區按使得該等兩個接觸區之劃定在形成連接前亦可能之一方式相互分開。該等接觸區較佳地相互間隔開地形成。在此情況中,該等接觸區藉由一空間分隔而相互分開,且在此方面,可相互區別。 In step a), a connection element is provided, which has two connection regions. The two connection regions each have a large number of nanowires. The first connection region and the second connection region are arranged on the same side of the connection element. This means that the two connection regions are close to each other. The connection regions can touch each other, that is, merge into each other. As an alternative, the connection regions can be formed spaced apart from each other. The described method therefore makes it particularly possible to connect contact regions that are close to each other. The contact regions can touch each other. However, the two contact regions are separated from each other in a way that makes it possible to delineate the two contact regions before the connection is formed. The contact regions are preferably formed spaced apart from each other. In this case, the contact areas are separated from one another by a spatial separation and, in this respect, can be distinguished from one another.

在該描述之方法中之步驟a)中提供該連接元件。在此情況中,一方面,提供應理解為意謂如所描述而組配之一連接元件提供為該方法之部分。作為該方法之部分,將該等奈米線應用至該等連接區特別有可能,特別是,藉由電流生長。然而,另一方面,提供亦包含使用一連接元件,在該連接元件上,該等奈米線已經提供於該等連接區上。因此,舉例而言,一對應準備之連接元件自一供應商獲得且用於該描述之方法係可能的。以此方式獲得一準備之連接元件亦係在此使用之意義上的一連接元件之提供。 In step a) of the described method, the connection element is provided. In this case, provision is to be understood, on the one hand, as meaning that a connection element assembled as described is provided as part of the method. As part of the method, it is particularly possible to apply the nanowires to the connection regions, in particular by current growth. On the other hand, however, provision also encompasses the use of a connection element on which the nanowires are already provided on the connection regions. Thus, for example, it is possible that a correspondingly prepared connection element is obtained from a supplier and used for the described method. Obtaining a prepared connection element in this way is also a provision of a connection element in the sense used here.

該等奈米線較佳地按使得該等奈米實質上垂直於(較佳地,垂直 於)該各別連接區之一方式提供於該等連接區上。在一連接區上之全部該等奈米線可特別被稱作奈米線中之一塊。然而,該等奈米線亦可在任一所要的定向上提供於該等連接區上。將一連接區細分成多個(連接在一起或單獨)子區域亦係可能的,其中該等奈米線在該等各種子區域中不同地定向。以此方式,可利用一特別穩定連接,該連接特別地亦能夠以一特別令人滿意之方式承受剪切力。此外,該等奈米線不同地組配於該等連接區之各點處係可能的,特別是,關於其長度、直徑、材料及密度(奈米線之密度指定每單位面積提供多少奈米線)。 The nanowires are preferably provided on the connection regions in such a way that they are substantially perpendicular (preferably perpendicular) to the respective connection regions. All of the nanowires on a connection region may in particular be referred to as a block of nanowires. However, the nanowires may also be provided on the connection regions in any desired orientation. It is also possible to subdivide a connection region into a plurality of (connected together or separately) subregions, wherein the nanowires are oriented differently in the various subregions. In this way, a particularly stable connection may be utilized, which in particular is also able to withstand shear forces in a particularly satisfactory manner. Furthermore, it is possible to arrange the nanowires differently at various points in the connection regions, in particular with regard to their length, diameter, material and density (the density of the nanowires specifies how many nanowires are provided per unit area).

該連接元件可特別地解釋為該第一組件與該第二組件之間的該連接之一中間物。特別將適合於覆蓋該等兩個接觸區以連接該等組件的任一實體物件考慮為連接元件。 The connecting element may in particular be interpreted as an intermediary of the connection between the first component and the second component. In particular, any physical object suitable for covering the two contact areas in order to connect the components is considered as a connecting element.

一連接區特別為在該連接元件之各別側上的該連接元件之一表面之一空間上顯著的區域。特別是,該等連接區因該連接之形成而顯著係較佳的。此意謂該等連接區一開始並不與該連接元件之該表面之其餘處不同,且僅因該連接之形成而有區分,在於該等連接區係形成該連接所在之區。在此情況中,在形成該連接前,該等連接區僅在概念上與該連接元件之該表面之該其餘處有所差異。以實例說明,一區連接元件之一連接區可為顯著的,在於,至該各別接觸區之一區連接形成於該連接元件之一劃定區上(亦即,在該連接區上)。 A connection zone is in particular a spatially prominent area of a surface of the connection element on the respective side of the connection element. In particular, it is preferred that the connection zones are prominent due to the formation of the connection. This means that the connection zones do not initially differ from the rest of the surface of the connection element and are only distinguished due to the formation of the connection in that the connection zones are the zones where the connection is formed. In this case, before the connection is formed, the connection zones differ only conceptually from the rest of the surface of the connection element. By way of example, a connection zone of a zone connection element can be prominent in that a zone connection to the respective contact zone is formed on a demarcated area of the connection element (i.e. on the connection zone).

該等連接區較佳地與該對應的接觸區一樣大,且特別較佳地,具有其形式。然而,該等接觸區大於或小於該等對應的連接區及/或該等接觸區及該等對應的連接區具有不同形式亦係可能的。 The connection areas are preferably as large as the corresponding contact areas and particularly preferably have the same form. However, it is also possible that the contact areas are larger or smaller than the corresponding connection areas and/or that the contact areas and the corresponding connection areas have different forms.

在各情況中,該等連接區較佳地為該連接元件之該表面之簡單相鄰形式之區域。作為一替代,將該第一連接區及/或該第二連接區細分成該連接元件之該表面的多個單獨子區域係可能的。一連接區可因此包含該連接元件之該表面之兩個或更多個單獨部分。 In each case, the connection regions are preferably regions of simply adjacent form of the surface of the connection element. As an alternative, it is possible to subdivide the first connection region and/or the second connection region into a plurality of separate subregions of the surface of the connection element. A connection region can thus comprise two or more separate parts of the surface of the connection element.

在步驟b)及c)中,使該等接觸區與該等連接區在一起,亦即,朝向彼此移動。結果,在該等連接區上之該等奈米線與該各別接觸區接觸。在此情況中,該等奈米線連接至該對應的接觸區,作為此結果,形成在該等組件與該連接元件之間的對應的連接。 In steps b) and c), the contact regions are brought together with the connection regions, i.e. moved towards each other. As a result, the nanowires on the connection regions come into contact with the respective contact regions. In this case, the nanowires are connected to the corresponding contact regions, as a result of which corresponding connections are formed between the components and the connection element.

形成該連接,其中該等奈米線,特別是,其面向該各別接觸區之端部,連接至該接觸區。此連接係在一原子層級形成。此利用原子能進行之操作類似於在燒結期間發生之操作。該獲得之連接對於氣體及/或液體可為密不透封的,特別是,按以下方式:在該連接之區域中可防止或至少限制該連接及/或該等連接在一起之組件之腐蝕。特別是,該形成之連接可被視為全金屬。該描述之方法亦可被稱作「KlettWelding」〔鉤環焊〕。此傳達該連接係藉由大量奈米線獲得,及因此藉由大量細長發狀結構,及藉由加熱。該等大量奈米線可補償該等接觸區之不平度及粗糙度。 The connection is formed in which the nanowires, in particular their ends facing the respective contact area, are connected to the contact area. The connection is formed at an atomic level. The operation performed with atomic energy is similar to the operation that occurs during sintering. The connection obtained can be impermeable to gases and/or liquids, in particular in such a way that corrosion of the connection and/or the components connected together can be prevented or at least limited in the area of the connection. In particular, the connection formed can be considered as all-metal. The described method can also be referred to as "Klett Welding". The connection is obtained by a large number of nanowires, and therefore by a large number of elongated hair structures, and by heating. The large number of nanowires can compensate for the unevenness and roughness of the contact areas.

由於在奈米範圍中的該等奈米線之大小,該連接之表面(亦即,諸如範德瓦爾力之力在原子層級作用於之區)特別大。該連接可因此具有特別好之導電率及/或導熱率及/或機械穩定性。對於一電氣及/或熱特定傳導性連接,較佳地,該等奈米線自一導電性及/或導熱性材料形成。此處,銅之使用特別較佳。該等接觸區較佳地亦自一導電性及/或導熱性材料形成,特別是,用銅形成。如以上進一步描述,銅之使用並不可能,特定言之,在焊接連接之情況中。由於藉由該描述之方法獲得的該連接之大表面,該連接之導電率及/或導熱率特別大係可能的。該連接之特別好的導熱率可改良,例如,在該連接中涉及的該等組件之冷卻。特別是,為此目的,將銅用於該等奈米線及/或用於該等接觸區係較佳的。 Due to the size of the nanowires in the nanometer range, the surface of the connection (i.e. the area on which forces such as van der Waals forces act at the atomic level) is particularly large. The connection can therefore have a particularly good electrical and/or thermal conductivity and/or mechanical stability. For an electrically and/or thermally conductive connection, the nanowires are preferably formed from an electrically and/or thermally conductive material. The use of copper is particularly preferred here. The contact areas are preferably also formed from an electrically and/or thermally conductive material, in particular, from copper. As described further above, the use of copper is not possible, in particular in the case of solder connections. Due to the large surface of the connection obtained by the method described, a particularly large electrical and/or thermal conductivity of the connection is possible. The particularly good thermal conductivity of the connection can improve, for example, the cooling of the components involved in the connection. In particular, for this purpose, the use of copper for the nanowires and/or for the contact areas is preferred.

該描述之連接可此外以一特別簡單方式且不藉由工具形成。僅有必要連接該等接觸區及使該連接元件在一起。可任擇地執行加熱及壓力之施加,但並非絕對必要。 The connection described can also be produced in a particularly simple manner and without tools. It is only necessary to connect the contact areas and bring the connection elements together. The application of heat and pressure can be carried out optionally but is not absolutely necessary.

該等方法步驟a)至c)較佳地按所陳述之順序執行,特別是,連續地執行。特別是,步驟a)較佳地在步驟b)及c)開始前執行。 The method steps a) to c) are preferably performed in the order described, in particular, continuously. In particular, step a) is preferably performed before steps b) and c) are started.

若步驟b)及c)連續地執行,則一開始可使該第一接觸區與該第一連接區在一起(步驟b))。隨後,可使該連接元件與該第一接觸區所位於之該組件一起與該第二接觸區在一起(步驟c))。若該第一接觸區與該第二接觸區配置於不同組件上,則此特別有可能。 If steps b) and c) are performed consecutively, the first contact area can initially be brought together with the first connection area (step b)). Subsequently, the connection element can be brought together with the component in which the first contact area is located and with the second contact area (step c)). This is particularly possible if the first contact area and the second contact area are arranged on different components.

步驟b)與c)可替代地同時、以一臨時重疊方式或連續地執行。此特別有可能,其中將該連接元件同時朝向兩個接觸區移動。在相互緊靠之兩個接觸區之情況中,此特別有可能,尤其若兩個接觸區形成於同一組件上。 Steps b) and c) can alternatively be carried out simultaneously, in a temporarily overlapping manner or in succession. This is particularly possible when the connecting element is moved towards two contact areas simultaneously. This is particularly possible in the case of two contact areas that are adjacent to each other, in particular if the two contact areas are formed on the same component.

該第一連接區與該第二連接區以一導電方式相互連接係較佳的。該第一組件與該第二組件可因此以一導電方式相互連接。作為一替代,該第一連接區與該第二連接區相互電氣絕緣係較佳的。因此將該第一組件與該第二組件相互機械連接而不形成一導電性連接係可能的。此等兩個組件之一組合亦係可能的。以此方式,該連接元件可此外在一第三連接區上及在一第四連接區上具有大量奈米線,其中該第三連接區及該第四連接區配置於該連接元件之同一側上。此可為亦配置該第一連接區及該第二連接區之側。作為一替代,該第一連接區與該第二連接區可配置於該連接元件之與該第三連接區及該第四連接區不同的一側上。該方法較佳地此外包含:b')使一第三接觸區與該連接元件之該第三連接區在一起,以及c')使一第四接觸區與該連接元件之該第四連接區在一起。 It is preferred that the first connection region and the second connection region are connected to each other in an electrically conductive manner. The first component and the second component can therefore be connected to each other in an electrically conductive manner. As an alternative, it is preferred that the first connection region and the second connection region are electrically insulated from each other. It is therefore possible to mechanically connect the first component and the second component to each other without forming a conductive connection. A combination of these two components is also possible. In this way, the connection element can also have a large number of nanowires on a third connection region and on a fourth connection region, wherein the third connection region and the fourth connection region are arranged on the same side of the connection element. This can be the side on which the first connection region and the second connection region are also arranged. As an alternative, the first connection region and the second connection region can be arranged on a side of the connection element that is different from the third connection region and the fourth connection region. The method preferably further comprises: b') bringing a third contact region together with the third connection region of the connection element, and c') bringing a fourth contact region together with the fourth connection region of the connection element.

在此實施例中,該方法亦可被稱作「用於連接四個接觸區之方法」。 In this embodiment, the method may also be referred to as a "method for connecting four contact areas".

步驟b)、b')、c)與c')可同時、以一臨時重疊方式或連續地按任一所要的順序執行。 Steps b), b'), c) and c') may be performed simultaneously, in a temporarily overlapping manner or continuously in any desired order.

以上所陳述之內容對應地適用於第三連接區及第四連接區。 The above contents apply to the third connection area and the fourth connection area accordingly.

該等四個連接區可以一導電或電氣絕緣方式按任何所要的組合相互連接。以實例說明,該第三連接區與該第四連接區可以一導電方式相互連接,且所有其他連接區對可相互電氣絕緣。作為再一實例,該第一連接區與該第二連接區可以一導電方式相互連接,該第三連接區與該第四連接區可以一導電方式相互連接,且所有其他連接區對可相互電氣絕緣。所有連接區以一導電方式相互連接亦係可能的。所有連接區相互電氣絕緣亦係可能的。 The four connection areas can be connected to each other in any desired combination in a conductive or electrically insulating manner. By way of example, the third connection area and the fourth connection area can be connected to each other in a conductive manner, and all other pairs of connection areas can be electrically insulated from each other. As another example, the first connection area and the second connection area can be connected to each other in a conductive manner, the third connection area and the fourth connection area can be connected to each other in a conductive manner, and all other pairs of connection areas can be electrically insulated from each other. It is also possible that all connection areas are connected to each other in a conductive manner. It is also possible that all connection areas are electrically insulated from each other.

在該方法之一較佳實施例中,藉由自一起始主體切斷來形成在步驟a)中之連接元件。 In a preferred embodiment of the method, the connecting element in step a) is formed by severing from a starting body.

該等奈米線可生長於一基體上。該基體可充當一起始主體,自該起始主體切斷該連接元件。該起始主體較佳地在個別單獨區域上具有大量奈米線。該起始主體可具有例如具有奈米線之一或多個條帶。藉由無奈米線之條帶將多個此等條帶相互分開。可例如藉由切出起始主體之部分來生產連接元件。形成連接元件之切斷部分較佳地具有一寬度,使得該連接元件在中心具有一奈米條帶,且在其任一側上具有無奈米線的條帶之各別部分。該連接元件亦可具有多個奈米線條帶。此部分之長度可根據要求來選擇。 The nanowires can be grown on a substrate. The substrate can serve as a starting body from which the connecting element is cut. The starting body preferably has a large number of nanowires on individual separate areas. The starting body can have, for example, one or more strips with nanowires. A plurality of these strips are separated from each other by strips without nanowires. The connecting element can be produced, for example, by cutting out parts of the starting body. The cut-off part forming the connecting element preferably has a width such that the connecting element has a nanostrip in the center and respective parts of the strip without nanowires on either side thereof. The connecting element can also have a plurality of nanowire strips. The length of this part can be selected according to requirements.

該連接元件自一起始主體之形成使以一特別簡單且靈活方式執行步驟a)有可能。 The formation of the connecting element from a starting body makes it possible to carry out step a) in a particularly simple and flexible manner.

在該方法之再一較佳實施例中,步驟b)及/或步驟c)係在室溫下執行。 In another preferred embodiment of the method, step b) and/or step c) is performed at room temperature.

在該等接觸區與該等連接區之間的描述之連接可已在室溫下形成。在此情況中,將該連接元件抵靠該等接觸區推動以便形成該連接係較佳的。較佳地,在此處使用之壓力處於在3MPa與200MPa之間的範圍中,特別是,處於在15MPa與70MPa之間的範圍中。20MPa之壓力特別較佳。 The described connection between the contact areas and the connection areas can already be formed at room temperature. In this case, it is preferred to push the connection element against the contact areas in order to form the connection. Preferably, the pressure used here is in the range between 3 MPa and 200 MPa, in particular, in the range between 15 MPa and 70 MPa. A pressure of 20 MPa is particularly preferred.

較佳地,加熱亦不發生於步驟b)及c)之結束後。結果,作為溫度之 作用的結果,有可能防止該等組件之損壞。 Preferably, heating also does not occur after the completion of steps b) and c). As a result, it is possible to prevent damage to the components as a result of the temperature.

在再一較佳實施例中,該方法此外包含:d)將至少該等接觸區加熱至至少150℃之一溫度。 In another preferred embodiment, the method further comprises: d) heating at least the contact areas to a temperature of at least 150°C.

將該等接觸區加熱至至少150℃之一溫度(作為最小溫度),較佳地,加熱至至少170℃之一溫度(作為最小溫度)。該溫度較佳地為200℃。較佳地,實行該加熱至至多450℃之一溫度,特別是,至多240℃之一溫度。在本實施例中,在室溫下執行步驟b)及/或步驟c)亦係較佳的。此意謂,該加熱僅發生在按照步驟b)及步驟c)形成連接之後。藉由該加熱,加強因此形成之該連接。 The contact areas are heated to a temperature of at least 150°C (as a minimum temperature), preferably to a temperature of at least 170°C (as a minimum temperature). The temperature is preferably 200°C. Preferably, the heating is carried out to a temperature of at most 450°C, in particular, to a temperature of at most 240°C. In this embodiment, it is also preferred to carry out step b) and/or step c) at room temperature. This means that the heating occurs only after the connection is formed according to step b) and step c). By the heating, the connection thus formed is strengthened.

按照步驟d)之該加熱以一特別令人滿意之方式將該等奈米線連接至該等接觸區。對應地,僅加熱該等接觸區係足夠的。實務上,藉由此種類之加熱,通常不可能進行關於對接觸區、奈米線、連接元件及/或第一組件及/或兩個組件部分地或總體上執行加熱之區分。若使用導熱性材料,則情況特別如此。對於該連接之形成,不需要除該等接觸區之外的元件之(共同)加熱,但此(共同)加熱亦不有害。可因此特別地實行按照步驟d)之加熱,其中該一個組件或該等兩個組件與該連接元件共同地加熱,例如,在一爐中。然而,作為一替代,亦有可能將熱量局部地引入至該連接之區域內,特別是,至該等接觸區之區域內。 The heating according to step d) connects the nanowires to the contact areas in a particularly satisfactory manner. Accordingly, it is sufficient to heat only the contact areas. In practice, with this type of heating, it is generally not possible to distinguish whether the heating of the contact areas, the nanowires, the connecting element and/or the first component and/or both components is carried out partially or in total. This is particularly the case if thermally conductive materials are used. For the formation of the connection, (co-)heating of components other than the contact areas is not required, but this (co-)heating is also not harmful. The heating according to step d) can therefore be carried out in particular, wherein the one component or the two components are heated together with the connecting element, for example in a furnace. However, as an alternative, it is also possible to introduce the heat locally in the area of the connection, in particular, in the area of the contact areas.

對於該連接之形成,在一短時間週期內達到該描述之最小溫度至少一次係足夠的。無必要維持最小溫度。然而,將在步驟d)中執行加熱之溫度維持至少2秒、較佳地至少30秒係較佳的。此使確保按需要形成該連接有可能。原則上,在更長時間內維持該溫度並不有害。 For the formation of the connection, it is sufficient to reach the described minimum temperature at least once within a short period of time. It is not necessary to maintain the minimum temperature. However, it is preferred to maintain the temperature at which the heating is carried out in step d) for at least 2 seconds, preferably at least 30 seconds. This makes it possible to ensure that the connection is formed as desired. In principle, it is not harmful to maintain the temperature for a longer time.

可按一至少部分臨時重疊方式執行步驟b)與c),及亦步驟d)。舉例而言,因此有可能在步驟b)及c)前或期間進行預加熱,該預加熱能夠建構為步驟d)之部分。亦有可能按以下方式在步驟d)前加熱該第一組件及/或該第二組件之該各別接觸區:需要用於該連接之形成的該溫度已在按照步驟b)或c)之使之在一 起操作期間達到。特別是,在此方面,因此亦有可能在步驟b)或c)前開始步驟d)。在彼情況中,執行步驟d),因為甚至在步驟b)或c)之結束後,按照步驟d)需要之溫度仍然至少臨時存在。 Steps b) and c) and also step d) can be performed in an at least partially temporarily overlapping manner. For example, it is thus possible to carry out preheating before or during steps b) and c), which preheating can be constructed as part of step d). It is also possible to heat the respective contact areas of the first component and/or the second component before step d) in such a way that the temperature required for the formation of the connection has already been reached during the operation together according to step b) or c). In particular, in this respect, it is thus also possible to start step d) before step b) or c). In that case, step d) is performed because even after the end of step b) or c), the temperature required according to step d) is still at least temporarily present.

藉由該描述之方法,有可能獲得兩個接觸區之間的一連接,而達不到具有諸如在例如焊接或硬焊之情況中的一量值之一溫度。在本實施例中,可利用此優勢,其中免除不必要之加熱量。以實例說明,因此可避免涉及的該等組件之損壞。作為描述之低溫之結果,亦可排除可燃材料之點燃。對應地,在該描述之方法之任一時間點,該第一接觸區及/或該第二接觸區之一溫度不超過270℃、特別是240℃特別較佳。 By means of the described method, it is possible to obtain a connection between two contact zones without reaching a temperature having a value such as in the case of welding or brazing, for example. In the present embodiment, this advantage can be utilized, wherein unnecessary heating is avoided. By way of example, damage to the components involved can thus be avoided. As a result of the described low temperatures, ignition of combustible materials can also be excluded. Correspondingly, at any point in time of the described method, a temperature of the first contact zone and/or the second contact zone does not exceed 270° C., in particular 240° C. is particularly preferred.

在該方法之再一較佳實施例中,至少在加熱之一部分期間,藉由至少3MPa、特別是至少15MPa及/或至多200MPa、特別是70MPa之一壓力將該連接元件抵靠該第一接觸區及/或抵靠該第二接觸區推動。此可實行,特別在於,將該連接元件抵靠一個組件或抵靠兩個組件推動。 In a further preferred embodiment of the method, at least during a part of the heating, the connecting element is pushed against the first contact area and/or against the second contact area by a pressure of at least 3 MPa, in particular at least 15 MPa and/or at most 200 MPa, in particular 70 MPa. This can be implemented, in particular, by pushing the connecting element against one component or against two components.

較佳地,使用之壓力處於在3MPa與200MPa之間的範圍中,特別是,處於在15MPa與70MPa之間的範圍中。20MPa之壓力特別較佳。 Preferably, the pressure used is in the range between 3 MPa and 200 MPa, in particular, in the range between 15 MPa and 70 MPa. A pressure of 20 MPa is particularly preferred.

至少在溫度超過其指定下限之一時間週期中,該壓力較佳地高於指示之下限。在此方面,至少在該時間週期中,該等奈米線及該接觸區因此皆曝露於一對應的壓力,且曝露於一對應的溫度。結果,該連接可藉由壓力及溫度之作用而形成。 At least during a time period in which the temperature exceeds its specified lower limit, the pressure is preferably above the indicated lower limit. In this respect, at least during this time period, the nanowires and the contact area are therefore both exposed to a corresponding pressure and to a corresponding temperature. As a result, the connection can be formed by the action of pressure and temperature.

作為本發明之再一態樣提出的為用於將一第一接觸區連接至一第二接觸區的一連接元件之用途。該連接元件在一第一連接區上及在一第二連接區上具有大量各別奈米線。該第一連接區與該第二連接區配置於該連接元件之同一側上。 As another aspect of the present invention, a connection element is provided for connecting a first contact area to a second contact area. The connection element has a large number of individual nanowires on a first connection area and on a second connection area. The first connection area and the second connection area are arranged on the same side of the connection element.

以上進一步描述的方法之特定優勢及設計特徵可適用於且可轉移 至該描述之用途,且反之亦然。 Certain advantages and design features of the method described further above may be applicable and transferable to the use described therein, and vice versa.

該連接元件較佳地形成為導電性及/或導熱性。結果,該等接觸區可以一導電及/或導熱方式相互連接。作為一替代,該第一連接區與該第二連接區相互電氣絕緣係較佳的。 The connection element is preferably formed to be electrically and/or thermally conductive. As a result, the contact areas can be connected to each other in an electrically and/or thermally conductive manner. As an alternative, it is preferred that the first connection area and the second connection area are electrically insulated from each other.

在任何情況中,若在四點量測中於以下條件下將該第一連接區與該第二連接區之間的一電阻量測為至少100KΩ,則該第一連接區及該第二連接區意欲被視為相互電氣絕緣:室溫、空氣濕度20%、在恆定電壓(亦即,並非處於交流電壓)下之量測、藉由在該第一連接區上及在該第二連接區上之一各別電極的量測,該等電極在1cm2之一面積上接觸該各別連接區。 In any case, the first connection region and the second connection region are intended to be considered to be electrically isolated from each other if a resistance between the first connection region and the second connection region is measured to be at least 100 KΩ under the following conditions in a four-point measurement: room temperature, air humidity 20%, measurement at a constant voltage (i.e., not under alternating voltage), measurement by a respective electrode on the first connection region and on the second connection region, the electrodes contacting the respective connection region over an area of 1 cm2.

若該等連接區相互電氣絕緣,則在該等接觸區之間可形成一電氣絕緣、但機械穩定且任擇地亦導熱性連接。較佳地,在該第一連接區與該第二連接區之間的區域中的該連接元件之材料之一比電阻在室溫下為至少105Ωm,較佳地至少108Ωm。 If the connection areas are electrically insulated from one another, an electrically insulating, but mechanically stable and optionally also thermally conductive connection can be formed between the contact areas. Preferably, the material of the connection element in the region between the first connection area and the second connection area has a specific electrical resistance of at least 10 5 Ωm, preferably at least 10 8 Ωm at room temperature.

針對該連接元件之該材料之該比電阻描述的規格係關於在恆定電壓下之一量測。當施加一交流電壓時,可獲得可特別取決於該交流電壓之頻率的變化結果。 The specification describing the specific resistance of the material of the connection element relates to a measurement at a constant voltage. When an alternating voltage is applied, varying results are obtained which depend in particular on the frequency of the alternating voltage.

至少105Ωm、較佳地至少108Ωm之所陳述值係關於該連接元件之材料。廣泛多種材料之比電阻可在專家文獻中獲得,例如,以表格獲得。此處對此種類之規格進行參考。若該連接元件全部係自一特定材料形成,則該連接元件之該材料的待在此處使用之該比電阻為專家文獻中針對該特定材料指定之值。此定義意謂不由材料而是相反地例如由連接元件之形式產生的所有效應保持被排除。若該連接元件由不同材料構成,則該等個別材料之該比電阻可自專家文獻確定,且可確定該連接元件之材料之總比電阻,亦即,該等材料之構成。若在專家文獻中未發現材料之比電阻之值,則該值可藉由量測確定。 The stated values of at least 10 5 Ωm, preferably at least 10 8 Ωm, relate to the material of the connecting element. The specific resistances of a wide variety of materials can be found in the expert literature, for example, in tables. Reference is made here to specifications of this kind. If the connecting element is formed entirely from a specific material, the specific resistance of the material of the connecting element to be used here is the value specified in the expert literature for this specific material. This definition means that all effects which are not caused by the material but rather, for example, by the form of the connecting element remain excluded. If the connecting element consists of different materials, the specific resistances of the individual materials can be determined from the expert literature and the total specific resistance of the material of the connecting element, i.e. the composition of these materials, can be determined. If the value of the specific resistivity of a material is not found in the specialist literature, it can be determined by measurement.

在該用途之一個較佳實施例中,該第一接觸區配置於一組件之一第一區域中,且該第二接觸區配置於該組件之一第二區域中。 In a preferred embodiment of the use, the first contact area is configured in a first region of a component, and the second contact area is configured in a second region of the component.

在此實施例中,兩個接觸區形成於同一組件上。然而,該組件細分成至少兩個不同區域。該等個別區域可按設計特徵相互區別。該等個別區域亦可較佳地按功能相互區別。特別是,該等個別區域可為一電子組件經細分以有助於建構及組裝之地帶。 In this embodiment, two contact areas are formed on the same component. However, the component is subdivided into at least two different areas. The individual areas can be distinguished from each other by design features. The individual areas can also preferably be distinguished from each other by function. In particular, the individual areas can be areas where an electronic component is subdivided to facilitate construction and assembly.

在該用途之一較佳實施例中,該第一連接區與該第二連接區間隔開配置。 In a preferred embodiment of the use, the first connection area and the second connection area are configured separately.

該等連接區可純粹在概念上藉由連接之形成來區分。在此情況中,在本實施例中,一連接可存在於相互間隔開配置之該等連接區之間。特別是,奈米線亦可提供於待如所描述區別之該等連接區之間。此可有助於奈米線之生長,因為不需要採取措施來抑制該等奈米線在連接區之間的生長。相當大地促進連接元件之定位亦係可能的,因為連接區及接觸區不需要以一準確配合方式一個堆在另一個上地置放。取而代之,該等連接區精確地形成,其中當使其與各別接觸區接觸時,需要該等連接區。亦有以下情況:不需要針對一特定意欲之用途來生產連接元件。相反地,一連接元件可靈活地用於廣泛多種應用。在連接區之間的奈米線可保持未用,或可進入至在接觸區外之表面區域的連接。 The connection regions can be distinguished purely conceptually by the formation of the connection. In this case, in the present embodiment, a connection can exist between the connection regions that are arranged spaced apart from each other. In particular, nanowires can also be provided between the connection regions to be distinguished as described. This can contribute to the growth of the nanowires, since no measures need to be taken to inhibit the growth of the nanowires between the connection regions. It is also possible to significantly facilitate the positioning of the connection elements, since the connection regions and the contact regions do not need to be placed one on top of the other in an exactly fitting manner. Instead, the connection regions are formed precisely, wherein the connection regions are required when they are brought into contact with the respective contact regions. It is also the case that the connection elements do not need to be produced for a specific intended use. Instead, a connection element can be flexibly used in a wide variety of applications. Nanowires between connection areas can remain unused, or connections can be made to surface areas outside of the contact area.

在該用途之再一較佳實施例中,該第一接觸區與該第二接觸區由該連接元件以一導電、導熱及/或機械方式相互連接。 In another preferred embodiment of the use, the first contact area and the second contact area are connected to each other by the connecting element in an electrically conductive, thermally conductive and/or mechanical manner.

在此實施例中,可形成該等接觸區之間的一導電性、導熱性及/或機械連接,特別是,若該等奈米線係自導電性、導熱性及/或機械穩定材料形成。該第一接觸區與該第二接觸區較佳地以一導電及/或導熱方式相互連接。在該等連接區之間的該導電及/或導熱連接可由連接元件之材料形成。在此方面,其上配置該等奈米線的該連接元件之表面導電及/或導熱係足夠的。 In this embodiment, an electrically conductive, thermally conductive and/or mechanical connection between the contact areas can be formed, in particular if the nanowires are formed from electrically conductive, thermally conductive and/or mechanically stable materials. The first contact area and the second contact area are preferably connected to each other in an electrically and/or thermally conductive manner. The electrically and/or thermally conductive connection between the connection areas can be formed by the material of the connection element. In this respect, it is sufficient that the surface of the connection element on which the nanowires are arranged is electrically and/or thermally conductive.

後者正是該情況,特別是,在奈米線藉由一層連接至連接元件的用途之較佳實施例中,其中該層貫穿該第一連接區與該第二連接區之間形成。 The latter is the case, in particular, in a preferred embodiment of the use of the nanowire to be connected to the connection element via a layer, wherein the layer is formed between the first connection region and the second connection region.

該層較佳地用於奈米線之電流生長。該層較佳地自奈米線之材料形成。以此方式,一基體可塗佈有奈米線之材料,作為此結果,獲得該層。隨後,該等奈米線可生長於該表面上。該等奈米線之生長可劃定用於該層上。若藉由一微影中間步驟,該層在奈米線之生長前結構化,則有可能局部劃定奈米線之生長。以此方式,可獲得一起始主體,其中例如以條帶形式提供該等奈米線。 The layer is preferably used for the electric current growth of nanowires. The layer is preferably formed from the material of the nanowires. In this way, a substrate can be coated with the material of the nanowires, as a result of which the layer is obtained. Subsequently, the nanowires can be grown on the surface. The growth of the nanowires can be directed on the layer. If the layer is structured by a lithographic intermediate step before the growth of the nanowires, it is possible to locally direct the growth of the nanowires. In this way, a starting body can be obtained in which the nanowires are provided, for example, in the form of strips.

在用途之再一較佳實施例中,該層形成為導熱性、導電性,及/或用於形成一機械連接之目的。 In another preferred embodiment of the use, the layer is formed to be thermally conductive, electrically conductive, and/or for the purpose of forming a mechanical connection.

該等連接區可以一導熱、導電及/或機械方式相互連接,特別是,藉由此類型之層。較佳地,該層為導電性及/或導熱性。若此外,該等奈米線導電及/或導熱,則可產生該等接觸區之間的一導電性及/或導熱性連接。 The connection areas can be connected to each other in a thermally, electrically and/or mechanically conductive manner, in particular, by means of a layer of this type. Preferably, the layer is electrically and/or thermally conductive. If, in addition, the nanowires are electrically and/or thermally conductive, an electrically and/or thermally conductive connection between the contact areas can be produced.

在該用途之再一較佳實施例中,該連接元件具有薄膜狀組態。 In another preferred embodiment of the use, the connecting element has a film-like configuration.

將薄膜狀組態理解為意謂該連接元件具有該連接元件在其他方向上之延展更小得多之一厚度。在一較佳實施例中,該連接元件具有至多5mm之一厚度。較佳地,該連接元件之該厚度處於0.005mm與5mm[毫米]之範圍中,特別是處於0.01mm與1mm之範圍中。 A film-like configuration is understood to mean that the connecting element has a thickness with a much smaller extension of the connecting element in other directions. In a preferred embodiment, the connecting element has a thickness of at most 5 mm. Preferably, the thickness of the connecting element is in the range of 0.005 mm and 5 mm [millimeters], in particular in the range of 0.01 mm and 1 mm.

特別是,一薄膜狀連接元件較佳地具有可撓性組態。 In particular, a film-like connecting element preferably has a flexible configuration.

此外,較佳地,該連接元件具有條狀組態。在此實施例中,該等連接區配置於該條帶之兩個表面中之一者上,該等兩個表面相對於所有其他表面(由於該條帶之材料厚度而產生)具有一相當大之表面積。 Furthermore, preferably, the connection element has a strip-shaped configuration. In this embodiment, the connection areas are arranged on one of the two surfaces of the strip, which two surfaces have a relatively large surface area relative to all other surfaces (due to the material thickness of the strip).

該條帶材料可例如按卷狀物之形式提供。在此情況中,該等奈米線可已提供於該條帶材料站,且可例如受到一保護性漆保護。在使用該連接元件前,該保護性漆可移除,且因此暴露奈米線。該條帶材料之一各別所需部分可與 該卷狀物分開,以便加以使用。 The strip material can be provided, for example, in the form of a roll. In this case, the nanowires can already be provided at the strip material station and can, for example, be protected by a protective lacquer. Before using the connecting element, the protective lacquer can be removed and the nanowires can thus be exposed. A respectively desired portion of the strip material can be separated from the roll in order to be used.

在本實施例中,該連接元件亦可被稱作「連接帶」,且特別是,被稱作「KlettWelding帶」〔鉤環焊帶〕。 In this embodiment, the connecting element may also be referred to as a "connecting belt", and in particular, as a "Klett Welding belt".

作為本發明之再一態樣提出的為一種具有一連接元件及一組件之配置。該組件具有:-一第一接觸區,其藉由大量奈米線連接至該連接元件之一第一連接區,以及-一第二接觸區,其藉由大量奈米線連接至該連接元件之一第二連接區,其中該第一連接區與該第二連接區配置於該連接元件之同一側上。 As another aspect of the present invention, a configuration having a connection element and a component is proposed. The component has: - a first contact area, which is connected to a first connection area of the connection element through a large number of nanowires, and - a second contact area, which is connected to a second connection area of the connection element through a large number of nanowires, wherein the first connection area and the second connection area are arranged on the same side of the connection element.

以上進一步描述的方法及連接元件之用途之特定優勢及設計特徵可適用於且可轉移至該描述之配置。 The specific advantages and design features of the methods and uses of the connection elements described further above are applicable and transferable to the described configurations.

1,101:奈米線 1,101:Nanowires

2,110:第一組件 2,110: First component

3,113:第二組件 3,113: Second component

4:第一組件之接觸區 4: Contact area of the first component

5:第二組件之接觸區 5: Contact area of the second component

6:第一連接元件 6: First connecting element

7,107:第一連接區 7,107: First connection area

8,108:第二連接區 8,108: Second connection area

9,12,15,109:配置 9,12,15,109:Configuration

10:第一側 10: First side

11:第二側 11: Second side

13:功能元件 13: Functional components

14:第二連接元件 14: Second connecting element

16:第三組件 16: The third component

17:第四組件 17: The fourth component

18:第三組件之接觸區 18: Contact area of the third component

19:第四組件之接觸區 19: Contact area of the fourth component

20:第三連接區 20: Third connection area

21:第四連接區 21: Fourth connection area

102:第一接觸區 102: First contact area

103:第二接觸區 103: Second contact area

104:第一區域 104: First Area

105:第二區域 105: Second Area

106:連接元件 106: Connecting components

111:層 111: Layer

112:起始主體 112: Starting subject

以下將基於諸圖更詳細地論述本發明及技術領域。該等圖展示特別較佳例示性實施例,然而,本發明不限於該等實施例。特別指出,該等圖,及特別是,圖示之比例,僅為示意性。在該等圖中,在各情況中,示意性地:圖1:展示用於連接兩個組件的根據本發明之一方法之圖示,以及圖2:展示按照來自圖1之方法相互連接之兩個組件的根據本發明之一配置之圖示,以及圖3:展示根據本發明的再一配置之圖示,圖4:展示根據本發明的再一配置之圖示,圖5:展示用於連接兩個接觸區的根據本發明之一方法之圖示,圖6:展示具有具按照來自圖5之方法相互連接之兩個接觸區之一組件的根據本發明之一第一配置之側視圖, 圖7:展示自來自圖6之連接元件之下方之視圖,圖8:展示來自一起始主體之下方之視圖,自該起始主體可獲得來自圖6及圖7之連接元件,圖9:展示自一連接元件之一第二實施例之下方之視圖,圖10:展示自一連接元件之一第三實施例之下方之視圖,以及圖11:展示具有具按照來自圖5之方法相互連接之兩個接觸區之一組件的根據本發明之再一配置之側視圖。 The present invention and technical field will be described in more detail below based on the figures. The figures show particularly preferred exemplary embodiments, however, the present invention is not limited to the embodiments. It is particularly pointed out that the figures, and in particular, the scales shown, are only schematic. In these figures, in each case, schematically: FIG. 1: shows a diagram of a method according to the present invention for connecting two components, and FIG. 2: shows a diagram of a configuration according to the present invention of two components connected to each other according to the method from FIG. 1, and FIG. 3: shows a diagram of a further configuration according to the present invention, FIG. 4: shows a diagram of a further configuration according to the present invention, FIG. 5: shows a diagram of a method according to the present invention for connecting two contact areas, FIG. 6: shows a component having two contact areas connected to each other according to the method from FIG. 5 7: a view from below the connecting element from FIG. 6, FIG. 8: a view from below a starting body from which the connecting elements from FIG. 6 and FIG. 7 are obtained, FIG. 9: a view from below a second embodiment of a connecting element, FIG. 10: a view from below a third embodiment of a connecting element, and FIG. 11: a side view of a further configuration according to the invention showing a component with two contact areas connected to each other according to the method from FIG. 5.

較佳實施例之詳細說明 Detailed description of the preferred embodiment

圖1展示一種用於將一第一組件2連接至一第二組件3之方法。使用之參考符號係關於圖2。該方法包含:a)提供一連接元件6,該連接元件6具有在該連接元件6之一第一側10上的一第一連接區7上及在該連接元件6之與該第一側10相對的一第二側11上的一第二連接區8上之大量各別奈米線1,其中該第一連接區7與該第二連接區8相互電氣絕緣,b)使該第一組件2之一接觸區4與該連接元件6之該第一連接區7在一起,以及c)使該第二組件3之一接觸區5與該連接元件6之該第二連接區8在一起。 FIG. 1 shows a method for connecting a first component 2 to a second component 3. The reference symbols used are related to FIG. 2. The method comprises: a) providing a connection element 6 having a plurality of individual nanowires 1 on a first connection region 7 on a first side 10 of the connection element 6 and on a second connection region 8 on a second side 11 of the connection element 6 opposite to the first side 10, wherein the first connection region 7 and the second connection region 8 are electrically insulated from each other, b) bringing together a contact region 4 of the first component 2 and the first connection region 7 of the connection element 6, and c) bringing together a contact region 5 of the second component 3 and the second connection region 8 of the connection element 6.

步驟b)及/或c)較佳地在室溫下執行。該方法可此外包含以下可選步驟,其在圖1中由一虛線框指示:d)將至少該等接觸區4、5加熱至至少150℃之一溫度。 Steps b) and/or c) are preferably performed at room temperature. The method may further comprise the following optional step, which is indicated by a dashed box in FIG. 1 : d) heating at least the contact areas 4, 5 to a temperature of at least 150°C.

圖2展示可藉由來自圖1之方法獲得之一配置9。配置9包含一第一組件2,其藉由在一連接元件6之一第一側10上之一第一連接區7上的大量奈米線 1連接至該連接元件6。配置9此外包含一第二組件3,其藉由在一連接元件6之與第一側10相對之一第二側11上之一第二連接區8上的大量奈米線1連接至該連接元件6。為此目的,第一組件2及第二組件3具有一各別接觸區4、5。 FIG. 2 shows a configuration 9 obtainable by the method from FIG. 1 . Configuration 9 comprises a first component 2, which is connected to a connection element 6 via a plurality of nanowires 1 on a first connection region 7 on a first side 10 of the connection element 6. Configuration 9 further comprises a second component 3, which is connected to the connection element 6 via a plurality of nanowires 1 on a second connection region 8 on a second side 11 of the connection element 6 opposite the first side 10. For this purpose, the first component 2 and the second component 3 have a respective contact region 4, 5.

該第一連接區7與該第二連接區8相互電氣絕緣。為此目的,連接元件6自陶瓷材料形成於至少在第一連接區7與第二連接區8之間的區域中,結果為,至少在此區域中的連接元件6之一比電阻為至少1010Ωm。連接元件6具有薄膜狀組態。連接元件6之厚度為至多5mm。連接元件6之厚度可在圖2中識別為連接元件6在垂直方向上之範圍。 The first connection region 7 and the second connection region 8 are electrically insulated from each other. For this purpose, the connection element 6 is formed from a ceramic material at least in the region between the first connection region 7 and the second connection region 8, as a result of which a specific resistance of the connection element 6 at least in this region is at least 10 10 Ωm. The connection element 6 has a film-like configuration. The thickness of the connection element 6 is at most 5 mm. The thickness of the connection element 6 can be identified in FIG. 2 as the extent of the connection element 6 in the vertical direction.

圖3展示具有一第一組件2、一功能元件13、一第二組件3、一第一連接元件6及一第二連接元件14之一配置12。第一組件2經由大量奈米線1連接至第一連接元件6之第一連接區7。功能元件13在一第一側上經由大量奈米線1連接至第一連接元件6之第二連接區8,且在一第二側上經由大量奈米線1連接至第二連接元件14之第一連接區7。第二組件3經由大量奈米線1連接至第二連接元件14之第二連接區8。連接元件6、14之連接區7、8各自相互電氣絕緣。圖3中展示之配置12可藉由將來自圖1之方法應用兩次來產生。 FIG. 3 shows a configuration 12 having a first component 2, a functional element 13, a second component 3, a first connection element 6 and a second connection element 14. The first component 2 is connected to a first connection region 7 of the first connection element 6 via a plurality of nanowires 1. The functional element 13 is connected to a second connection region 8 of the first connection element 6 via a plurality of nanowires 1 on a first side and to a first connection region 7 of the second connection element 14 via a plurality of nanowires 1 on a second side. The second component 3 is connected to a second connection region 8 of the second connection element 14 via a plurality of nanowires 1. The connection regions 7, 8 of the connection elements 6, 14 are each electrically insulated from one another. The configuration 12 shown in FIG. 3 can be produced by applying the method from FIG. 1 twice.

圖4展示具有一第一組件2、一第二組件3、一第三組件16及一第四組件17之一配置15。第一組件2藉由在一連接元件6之一第一側10上之一第一連接區7上的大量奈米線1連接至該連接元件6。第二組件3藉由在連接元件6之與第一側10相對之一第二側11上之一第二連接區8上的大量奈米線1連接至連接元件6。該第一連接區7與該第二連接區8相互電氣絕緣。第三組件16藉由在連接元件6之第一側10上之一第三連接區20上的大量奈米線1連接至該連接元件6。第四組件17藉由在連接元件6之第二側11上之一第四連接區21上的大量奈米線1連接至該連接元件6。第三連接區20與第四連接區21以一導電方式相互連接。此外所描繪為組件2、3、16、17之各別接觸區4、5、18、19。 FIG4 shows an arrangement 15 with a first component 2, a second component 3, a third component 16 and a fourth component 17. The first component 2 is connected to a connection element 6 by a plurality of nanowires 1 on a first connection region 7 on a first side 10 of the connection element 6. The second component 3 is connected to the connection element 6 by a plurality of nanowires 1 on a second connection region 8 on a second side 11 of the connection element 6 opposite to the first side 10. The first connection region 7 and the second connection region 8 are electrically insulated from each other. The third component 16 is connected to the connection element 6 by a plurality of nanowires 1 on a third connection region 20 on the first side 10 of the connection element 6. The fourth component 17 is connected to the connection element 6 by a plurality of nanowires 1 on a fourth connection region 21 on the second side 11 of the connection element 6. The third connection area 20 and the fourth connection area 21 are connected to each other in a conductive manner. Also depicted are the respective contact areas 4, 5, 18, and 19 of components 2, 3, 16, and 17.

圖5展示一種用於將一第一接觸區102連接至一第二接觸區103之方法。使用之參考符號係關於圖6。該方法包含:a)提供在一第一連接區107上及在一第二連接區108上具有大量奈米線101之一連接元件106,其中該第一連接區107及該第二連接區108配置於該連接元件106之同一側上,b)使該第一接觸區102與該連接元件106之該第一連接區107在一起,以及c)使該第二接觸區103與該連接元件106之該第二連接區108在一起。 FIG. 5 shows a method for connecting a first contact region 102 to a second contact region 103. The reference symbols used are related to FIG. 6. The method comprises: a) providing a connection element 106 having a plurality of nanowires 101 on a first connection region 107 and on a second connection region 108, wherein the first connection region 107 and the second connection region 108 are arranged on the same side of the connection element 106, b) bringing the first contact region 102 together with the first connection region 107 of the connection element 106, and c) bringing the second contact region 103 together with the second connection region 108 of the connection element 106.

在步驟a),連接元件106可藉由經自圖8中展示之起始主體112切斷來形成。 In step a), the connecting element 106 can be formed by cutting from the starting body 112 shown in FIG. 8 .

步驟b)及/或c)較佳地在室溫下執行。該方法可此外包含以下可選步驟,其在圖5中由一虛線框指示:d)將至少該等接觸區102、103加熱至至少150℃之一溫度。 Steps b) and/or c) are preferably performed at room temperature. The method may further comprise the following optional step, which is indicated by a dashed box in FIG. 5 : d) heating at least the contact areas 102, 103 to a temperature of at least 150°C.

圖6展示具有一連接元件106及一組件110之一配置109。組件110具有一第一接觸區102及一第二接觸區103。第一接觸區102藉由大量奈米線101連接至該連接元件106之一第一連接區107。第二接觸區103藉由大量奈米線101連接至該連接元件106之一第二連接區108。該第一連接區107與該第二連接區108配置於該連接元件106之同一側上。在圖6中展示之實例中,面向下方的正是連接元件106之彼側。 FIG. 6 shows a configuration 109 having a connection element 106 and a component 110. Component 110 has a first contact region 102 and a second contact region 103. The first contact region 102 is connected to a first connection region 107 of the connection element 106 via a plurality of nanowires 101. The second contact region 103 is connected to a second connection region 108 of the connection element 106 via a plurality of nanowires 101. The first connection region 107 and the second connection region 108 are arranged on the same side of the connection element 106. In the example shown in FIG. 6, it is the side of the connection element 106 that faces downward.

第一接觸區102配置於組件110之第一區域104中。第二接觸區103配置於組件110之第二區域105中。 The first contact area 102 is disposed in the first area 104 of the component 110. The second contact area 103 is disposed in the second area 105 of the component 110.

連接區107、108相互間隔開配置。 The connection areas 107 and 108 are spaced apart from each other.

奈米線101藉由層111連接至連接元件106。層111遍及第一連接區 域107與第二連接區域108之間形成。 The nanowire 101 is connected to the connection element 106 via a layer 111. The layer 111 is formed between the first connection region 107 and the second connection region 108.

層111導電且導熱。奈米線101自導電且導熱材料形成。在此方面,該等接觸區102、103以一導電且導熱方式相互連接。 The layer 111 is electrically and thermally conductive. The nanowire 101 is formed from an electrically and thermally conductive material. In this regard, the contact areas 102, 103 are connected to each other in an electrically and thermally conductive manner.

圖7展示自可在來自圖5之方法中使用的來自圖6之連接元件106之下方之視圖。可看到層111。圖7展示在形成連接前之情形,結果為,尚未界定連接區。 FIG. 7 shows a view from below of the connection element 106 from FIG. 6 which can be used in the method from FIG. 5 . The layer 111 can be seen. FIG. 7 shows the situation before the connection is made, as a result of which the connection area has not yet been defined.

圖8展示具有層111之大量條帶的一起始主體112。此等具有奈米線101之條帶與無奈米線101之條帶相互間隔開。虛線指示可藉由自較佳地薄膜狀起始主體112切出來獲得連接元件106之方式。可根據要求選擇連接元件106沿著層111之條帶的範圍。連接元件106亦可形成有層111之多於一個條帶。大量連接元件106可自起始主體112切出。按虛線描繪之連接元件106為一第一連接元件,在展示之實例中,該第一連接元件在一個角落處切出。作為一替代,例如,全部起始主體112亦有可能用作一連接元件106。層111之條帶亦無必要以一規則方式配置,如在展示之實施例中。具有不同條帶寬度、具有鄰近條帶之間的不同間距、具有條帶之不同長度(在圖8中之自右至左方向上)及/或具有條帶之不同定向的一規則圖案亦係可能的。 FIG. 8 shows a starting body 112 with a plurality of strips of a layer 111. These strips with nanowires 101 are spaced apart from strips without nanowires 101. The dashed lines indicate the manner in which the connecting element 106 can be obtained by cutting out from the preferably film-like starting body 112. The extent of the strips of the connecting element 106 along the layer 111 can be selected as required. The connecting element 106 can also be formed as more than one strip of the layer 111. A plurality of connecting elements 106 can be cut out from the starting body 112. The connecting element 106 depicted in dashed lines is a first connecting element which, in the example shown, is cut out at a corner. As an alternative, for example, the entire starting body 112 can also be used as a connecting element 106. The strips of layer 111 also need not be arranged in a regular manner, as in the embodiment shown. A regular pattern with different strip widths, with different spacing between adjacent strips, with different lengths of the strips (in the right-to-left direction in FIG. 8 ), and/or with different orientations of the strips is also possible.

圖9及圖10對應地展示具有層111之一不同配置的連接元件6之兩個實施例。 FIG. 9 and FIG. 10 respectively show two embodiments of the connecting element 6 with a different configuration of the layer 111.

按照圖9之連接元件106包含層111之一條帶,其寬度連續地減小。此連接元件6可特別用來將大接觸區(在連接元件106之左側)連接至小接觸區(右側)。 The connecting element 106 according to FIG. 9 comprises a strip of layer 111, the width of which decreases continuously. This connecting element 6 can be used in particular to connect a large contact area (on the left side of the connecting element 106) to a small contact area (on the right side).

按照圖10之連接元件6包含層111之四個條帶。該等條帶具有不同長度。連接元件106可對應地用來形成四個連接,其中各別第一接觸區配置於一條線上,且各別第二接觸區配置於傾斜於該線之一條線上。 The connection element 6 according to FIG. 10 comprises four strips of layer 111. The strips have different lengths. The connection element 106 can be used to form four connections accordingly, wherein the respective first contact area is arranged on a line and the respective second contact area is arranged on a line inclined to the line.

圖11展示相互連接的接觸區102、103之第二配置109。此配置109與來自圖6之配置109不同之處在於,接觸區2、3未配置於組件110之不同區域104、105上。取而代之,第一接觸區102配置於第一組件110上,且第二接觸區103配置於第二組件113上。兩個組件110、113未相互平行地配置。藉由實例展示兩個組件形成相互間90°之一角度。呈不同角度之配置類似地有可能。存在分開組件110、113之特徵及未相互平行地對準之接觸區102、103之特徵相互獨立。舉例而言,此意謂,組件110之區域104、105亦可形成相互間之角度。 FIG. 11 shows a second configuration 109 of interconnected contact areas 102, 103. This configuration 109 differs from the configuration 109 from FIG. 6 in that the contact areas 2, 3 are not arranged on different areas 104, 105 of the component 110. Instead, the first contact area 102 is arranged on the first component 110 and the second contact area 103 is arranged on the second component 113. The two components 110, 113 are not arranged parallel to each other. By way of example, the two components form an angle of 90° to each other. Configurations at different angles are similarly possible. The features of the separate components 110, 113 and the features of the contact areas 102, 103 not being aligned parallel to each other are independent of each other. This means, for example, that the regions 104, 105 of the component 110 can also form an angle with respect to each other.

在圖11中,兩個組件110、113形成一角度配置,在其內側上配置連接元件106。作為一替代,連接元件106亦可配置於角度配置之外側上。在圖11中,角度配置之外側由第一組件110之左側及第二組件113之底部側形成。 In FIG. 11 , the two components 110 and 113 form an angled arrangement, on the inner side of which the connecting element 106 is arranged. As an alternative, the connecting element 106 can also be arranged on the outer side of the angled arrangement. In FIG. 11 , the outer side of the angled arrangement is formed by the left side of the first component 110 and the bottom side of the second component 113.

Claims (13)

一種用於將一第一組件連接至一第二組件之方法,包含:a)提供一連接元件,該連接元件具有在該連接元件之一第一側上的一第一連接區上及在該連接元件之與該第一側相對的一第二側上的一第二連接區上之大量各別奈米線,其中該第一連接區與該第二連接區相互電氣絕緣,且其中該連接元件自一聚合物形成,b)使該第一組件之一接觸區與該連接元件之該第一連接區在一起,以及c)使該第二組件之一接觸區與該連接元件之該第二連接區在一起。 A method for connecting a first component to a second component, comprising: a) providing a connecting element having a plurality of individual nanowires on a first connecting region on a first side of the connecting element and on a second connecting region on a second side of the connecting element opposite the first side, wherein the first connecting region and the second connecting region are electrically insulated from each other, and wherein the connecting element is formed from a polymer, b) bringing together a contact region of the first component and the first connecting region of the connecting element, and c) bringing together a contact region of the second component and the second connecting region of the connecting element. 如請求項1所述之方法,其中步驟b)及/或步驟c)係在室溫下執行。 The method as described in claim 1, wherein step b) and/or step c) is performed at room temperature. 如請求項1至2中任一項所述之方法,進一步包含:d)將至少該等接觸區加熱至至少90℃之一溫度。 The method as described in any one of claims 1 to 2 further comprises: d) heating at least the contact areas to a temperature of at least 90°C. 如請求項1所述之方法,其中在步驟b)及/或c)中藉由超音而作用於該連接元件、該第一組件及/或該第二組件。 A method as claimed in claim 1, wherein in step b) and/or c), the connecting element, the first component and/or the second component are acted on by ultrasound. 如請求項1所述之方法,其中在步驟a)中提供之該連接元件亦具有在該連接元件之該第一側上的一第三連接區上及在該連接元件之該第二側上的一第四連接區上之各別大量奈米線,其中該第三連接區與該第四連接區以一導電方式相互連接,且其中該方法亦包含下列步驟:b')使一第三組件之一接觸區與該連接元件之該第三連接區在一起,以及c')使一第四組件之一接觸區與該連接元件之該第四連接區在一起。 The method as claimed in claim 1, wherein the connection element provided in step a) also has a plurality of nanowires on a third connection region on the first side of the connection element and on a fourth connection region on the second side of the connection element, wherein the third connection region and the fourth connection region are connected to each other in a conductive manner, and wherein the method also includes the following steps: b') bringing a contact region of a third component together with the third connection region of the connection element, and c') bringing a contact region of a fourth component together with the fourth connection region of the connection element. 一種用於將一第一組件連接至一第二組件之連接元件,其中該連接元件具有在該連接元件之一第一側上的一第一連接區上及在該連接元件之與該第一側相對的一第二側上的一第二連接區上之大量各別奈米線,且其中該第一連接區與該第二連接區相互電氣絕緣,且其中該連接元件自一聚合物形成。 A connecting element for connecting a first component to a second component, wherein the connecting element has a plurality of individual nanowires on a first connecting region on a first side of the connecting element and on a second connecting region on a second side of the connecting element opposite to the first side, and wherein the first connecting region and the second connecting region are electrically insulated from each other, and wherein the connecting element is formed from a polymer. 如請求項6所述之連接元件,其中該連接元件具有薄膜狀組 態。 A connecting element as described in claim 6, wherein the connecting element has a film-like configuration. 如請求項6或7所述之連接元件,其中該連接元件之一厚度為至多5mm。 A connecting element as described in claim 6 or 7, wherein one thickness of the connecting element is at most 5 mm. 如請求項6所述之連接元件,其中在該第一連接區與該第二連接區之間的區域中的該連接元件之材料之一比電阻在室溫下為至少105Ωm。 A connection element as claimed in claim 6, wherein a material of the connection element in the region between the first connection region and the second connection region has a specific resistance of at least 105Ωm at room temperature. 如請求項6所述之連接元件,其中該連接元件係由一陶瓷材料形成於該第一連接區與該第二連接區之間的該區域中。 A connecting element as described in claim 6, wherein the connecting element is formed of a ceramic material in the region between the first connecting region and the second connecting region. 如請求項6所述之連接元件,進一步包含在該連接元件之該第一側上的一第三連接區上及在該連接元件之該第二側上的一第四連接區上之各別大量奈米線,其中該第三連接區與該第四連接區以一導電方式相互連接。 The connection element as described in claim 6 further comprises a plurality of nanowires on a third connection region on the first side of the connection element and on a fourth connection region on the second side of the connection element, wherein the third connection region and the fourth connection region are connected to each other in a conductive manner. 一種具有一連接元件及一組件之配置,其包含:一第一組件,其藉由在一連接元件之一第一側上之一第一連接區上的大量奈米線連接至該連接元件,以及一第二組件,其藉由在該連接元件之與該第一側相對的一第二側上之一第二連接區上的大量奈米線連接至該連接元件,其中該第一連接區與該第二連接區相互電氣絕緣,且其中該連接元件自一聚合物形成。 A configuration having a connection element and a component, comprising: a first component connected to the connection element via a plurality of nanowires on a first connection region on a first side of the connection element, and a second component connected to the connection element via a plurality of nanowires on a second connection region on a second side of the connection element opposite to the first side, wherein the first connection region and the second connection region are electrically insulated from each other, and wherein the connection element is formed from a polymer. 一種具有一連接元件及一組件之配置,其包含:一第一組件,一功能元件,一第二組件,一第一連接元件,以及一第二連接元件,其中該第一組件經由大量奈米線連接至該第一連接元件之一第一連接區,其中該功能元件在一第一側上經由大量奈米線連接至該第一連接元件之一第二連接區,且在一第二側上經由大量奈米線連接至該第二連接元件之一第一連接區,其中該第二組件經由大量奈米線連接至該第二連接元件之一第二連接區,其 中該第一連接元件之該第一連接區與該第二連接區相互電氣絕緣,且其中該第二連接元件之該第一連接區與該第二連接區相互電氣絕緣。 A configuration having a connection element and a component, comprising: a first component, a functional component, a second component, a first connection element, and a second connection element, wherein the first component is connected to a first connection region of the first connection element via a large number of nanowires, wherein the functional element is connected to a second connection region of the first connection element via a large number of nanowires on a first side, and is connected to a first connection region of the second connection element via a large number of nanowires on a second side, wherein the second component is connected to a second connection region of the second connection element via a large number of nanowires, wherein the first connection region and the second connection region of the first connection element are electrically insulated from each other, and wherein the first connection region and the second connection region of the second connection element are electrically insulated from each other.
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